JP2021118274A - Transfer substrate - Google Patents

Transfer substrate Download PDF

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JP2021118274A
JP2021118274A JP2020011030A JP2020011030A JP2021118274A JP 2021118274 A JP2021118274 A JP 2021118274A JP 2020011030 A JP2020011030 A JP 2020011030A JP 2020011030 A JP2020011030 A JP 2020011030A JP 2021118274 A JP2021118274 A JP 2021118274A
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light emitting
emitting element
transfer substrate
holding surface
width
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広太 魚岸
Kota Uogishi
広太 魚岸
健一 武政
Kenichi Takemasa
健一 武政
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Japan Display Inc
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Japan Display Inc
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Priority to JP2020011030A priority Critical patent/JP2021118274A/en
Priority to TW110100595A priority patent/TWI792145B/en
Priority to KR1020210009572A priority patent/KR20210096010A/en
Priority to CN202110102354.7A priority patent/CN113178411A/en
Publication of JP2021118274A publication Critical patent/JP2021118274A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68313—Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting

Abstract

To provide a transfer substrate that can improve the efficiency of transferring a light-emitting element.SOLUTION: A transfer substrate holds a light-emitting element temporarily. The transfer substrate includes a holding surface in contact with a terminal side of the light-emitting element, and the holding surface is a sticky uneven surface.SELECTED DRAWING: Figure 4

Description

本発明の実施形態は、移戴基板に関する。 Embodiments of the present invention relate to transfer substrates.

近年、微小なサイズの発光素子を配列して構成された発光装置が種々提案されている。このような発光素子は、例えば、素子形成用基板に形成された後に、他の保持用基板に一時的に保持され、最終的には配線基板に実装される。発光素子を素子形成用基板から保持用基板に移戴（transfer）する際、一例では、吸着用冶具で発光素子を吸着し、素子形成用基板から発光素子を剥離する技術が知られている。
このような発光装置の製造工程において、ある一方の基板上の発光素子を他方の基板に移戴する際に、一方の基板からの発光素子の剥離と、他方の基板への発光素子の転写をスムースに行うことが要望されている。
本明細書では、発光素子を一時的に保持する基板の少なくとも１つを移戴基板と称する。 In recent years, various light emitting devices having been constructed by arranging light emitting elements having a minute size have been proposed. Such a light emitting element is, for example, formed on an element forming substrate, temporarily held by another holding substrate, and finally mounted on a wiring substrate. When transferring a light emitting element from an element forming substrate to a holding substrate, for example, a technique is known in which a light emitting element is adsorbed by an adsorption jig and the light emitting element is peeled off from the element forming substrate.
In the manufacturing process of such a light emitting device, when the light emitting element on one substrate is transferred to the other substrate, the light emitting element is peeled off from one substrate and transferred to the other substrate. It is required to do it smoothly.
In the present specification, at least one of the substrates that temporarily holds the light emitting element is referred to as a transfer substrate.

特開２００２−２６１３３５号公報Japanese Unexamined Patent Publication No. 2002-261335

本実施形態の目的は、発光素子の移戴効率を改善することが可能な移戴基板を提供することにある。 An object of the present embodiment is to provide a transfer substrate capable of improving the transfer efficiency of a light emitting element.

本実施形態の移戴基板は、
発光素子を一時的に保持する移戴基板であって、発光素子の端子側に接触する保持面を有し、前記保持面は、粘着性の凹凸面である。
本実施形態の移戴基板は、
発光素子を一時的に保持する移戴基板であって、発光素子の端子側に接触する保持面を有し、発光素子が前記保持面に保持された状態において、前記保持面は、１つの発光素子に重畳する複数の凸部を有している。
本実施形態の移戴基板は、
発光素子を一時的に保持する移戴基板であって、発光素子の端子側に接触する保持面を有し、発光素子が前記保持面に保持された状態において、前記保持面は、１つの発光素子に重畳する複数の凹部を有している。 The transfer board of this embodiment is
It is a transfer substrate that temporarily holds the light emitting element, has a holding surface that contacts the terminal side of the light emitting element, and the holding surface is an adhesive uneven surface.
The transfer board of this embodiment is
A transfer substrate that temporarily holds a light emitting element, has a holding surface that contacts the terminal side of the light emitting element, and in a state where the light emitting element is held by the holding surface, the holding surface is one light emitting device. It has a plurality of convex portions superimposed on the element.
The transfer board of this embodiment is
A transfer substrate that temporarily holds a light emitting element, has a holding surface that contacts the terminal side of the light emitting element, and in a state where the light emitting element is held by the holding surface, the holding surface is one light emitting device. It has a plurality of recesses superimposed on the element.

図１は、発光装置１を説明するための図である。FIG. 1 is a diagram for explaining the light emitting device 1. 図２は、図１に示した発光装置１の製造方法の一例を示す図である。FIG. 2 is a diagram showing an example of a manufacturing method of the light emitting device 1 shown in FIG. 図３は、図１に示した発光装置１の製造方法の一例を示す図である。FIG. 3 is a diagram showing an example of a manufacturing method of the light emitting device 1 shown in FIG. 図４は、移戴基板１０の一構成例を示す斜視図である。FIG. 4 is a perspective view showing a configuration example of the transfer substrate 10. 図５は、移戴基板１０の一構成例を示す断面図である。FIG. 5 is a cross-sectional view showing a configuration example of the transfer substrate 10. 図６は、移戴基板１０における発光素子３の移戴工程を説明するための図である。FIG. 6 is a diagram for explaining a transfer process of the light emitting element 3 in the transfer substrate 10. 図７は、移戴基板１０の他の構成例を示す断面図である。FIG. 7 is a cross-sectional view showing another configuration example of the transfer substrate 10. 図８は、移戴基板１０の他の構成例を示す断面図である。FIG. 8 is a cross-sectional view showing another configuration example of the transfer substrate 10. 図９は、移戴基板１０の他の構成例を示す斜視図である。FIG. 9 is a perspective view showing another configuration example of the transfer substrate 10. 図１０は、移戴基板１０の他の構成例を示す斜視図である。FIG. 10 is a perspective view showing another configuration example of the transfer substrate 10. 図１１は、移戴基板１０の一構成例を示す断面図である。FIG. 11 is a cross-sectional view showing a configuration example of the transfer substrate 10. 図１２は、移戴基板１０の他の構成例を示す断面図である。FIG. 12 is a cross-sectional view showing another configuration example of the transfer substrate 10. 図１３は、移戴基板１０の他の構成例を示す断面図である。FIG. 13 is a cross-sectional view showing another configuration example of the transfer substrate 10. 図１４は、移戴基板１０の他の構成例を示す斜視図である。FIG. 14 is a perspective view showing another configuration example of the transfer substrate 10.

以下、本実施形態について、図面を参照しながら説明する。なお、開示はあくまで一例に過ぎず、当業者において、発明の主旨を保っての適宜変更について容易に想到し得るものについては、当然に本発明の範囲に含有されるものである。また、図面は、説明をより明確にするため、実際の態様に比べて、各部の幅、厚さ、形状等について模式的に表される場合があるが、あくまで一例であって、本発明の解釈を限定するものではない。また、本明細書と各図において、既出の図に関して前述したものと同一又は類似した機能を発揮する構成要素には同一の参照符号を付し、重複する詳細な説明を適宜省略することがある。 Hereinafter, the present embodiment will be described with reference to the drawings. It should be noted that the disclosure is merely an example, and those skilled in the art can easily conceive of appropriate changes while maintaining the gist of the invention are naturally included in the scope of the present invention. Further, in order to clarify the description, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment, but this is merely an example, and the present invention is provided. It does not limit the interpretation. Further, in the present specification and each figure, components exhibiting the same or similar functions as those described above with respect to the above-mentioned figures may be designated by the same reference numerals, and duplicate detailed description may be omitted as appropriate. ..

図１は、発光装置１を説明するための図である。本実施形態で説明する発光装置１は、例えば、画像を表示する表示装置や、照明装置などである。
発光装置１は、配線基板２と、複数の発光素子３と、を備えている。配線基板２は、ガラス基板や樹脂基板等のベース基板上に、走査線、信号線、電源線などの各種配線を備えている。このような配線基板２は、発光素子３を駆動するための複数のトランジスタを有し、ＴＦＴ基板やアレイ基板、バックプレーンなどと称される場合がある。発光素子３の各々は、配線基板２に実装されている。これらの発光素子３は、配線基板２の上においてマトリクス状に配列されている。発光素子３は、例えば、ミニＬＥＤやマイクロＬＥＤなどと称される極めて微小なサイズの発光ダイオード（ＬＥＤ）である。発光素子３は、略正方形の平面形状を有するものや、略長方形の平面形状を有するものなどがある。例えば、マクロＬＥＤの一辺の長さは１００μｍ以下であり、ミニＬＥＤの一辺の長さは１００μｍより大きい。
図１に示す例では、発光素子３として、赤色に発光する赤発光素子３Ｒ、緑色に発光する緑発光素子３Ｇ、及び、青色に発光する青発光素子３Ｂが一方向に配列されている。 FIG. 1 is a diagram for explaining the light emitting device 1. The light emitting device 1 described in this embodiment is, for example, a display device for displaying an image, a lighting device, or the like.
The light emitting device 1 includes a wiring board 2 and a plurality of light emitting elements 3. The wiring board 2 includes various wirings such as scanning lines, signal lines, and power supply lines on a base substrate such as a glass substrate or a resin substrate. Such a wiring board 2 has a plurality of transistors for driving the light emitting element 3, and may be referred to as a TFT board, an array board, a backplane, or the like. Each of the light emitting elements 3 is mounted on the wiring board 2. These light emitting elements 3 are arranged in a matrix on the wiring board 2. The light emitting element 3 is, for example, a light emitting diode (LED) having an extremely small size called a mini LED or a micro LED. The light emitting element 3 includes an element having a substantially square planar shape and an element 3 having a substantially rectangular planar shape. For example, the length of one side of the macro LED is 100 μm or less, and the length of one side of the mini LED is larger than 100 μm.
In the example shown in FIG. 1, as the light emitting element 3, a red light emitting element 3R that emits red light, a green light emitting element 3G that emits green light, and a blue light emitting element 3B that emits blue light are arranged in one direction.

図２及び図３は、図１に示した発光装置１の製造方法の一例を示す図である。
まず、図２の（Ａ）に示すように、支持体４に接着された複数の発光素子３を用意する。複数の発光素子３は、所定のピッチで配列されている。発光素子３は、アノード及びカソードに対応した端子３Ｔと、第１発光面３Ｅと、を有している。発光素子３は、端子３Ｔの側で支持体４に接着されている。第１発光面３Ｅは、端子３Ｔとは反対側（あるいは支持体４とは反対側）の上面側に位置している。 2 and 3 are diagrams showing an example of the manufacturing method of the light emitting device 1 shown in FIG.
First, as shown in FIG. 2A, a plurality of light emitting elements 3 bonded to the support 4 are prepared. The plurality of light emitting elements 3 are arranged at a predetermined pitch. The light emitting element 3 has a terminal 3T corresponding to an anode and a cathode, and a first light emitting surface 3E. The light emitting element 3 is adhered to the support 4 on the side of the terminal 3T. The first light emitting surface 3E is located on the upper surface side on the side opposite to the terminal 3T (or the side opposite to the support 4).

続いて、図２の（Ｂ）に示すように、発光素子３の第１発光面３Ｅの側にシート部材５を接着する。つまり、発光素子３は、一時的に、支持体４とシート部材５との間に位置し、支持体４及びシート部材５の双方に接着される。なお、発光素子３にシート部材５が接着される以前に、支持体４上において発光素子３の配列ピッチが変換されてもよい。その後、発光素子３とシート部材５との接着力が発光素子３と支持体４との接着力より大きい状態で、発光素子３から支持体４を剥離する。
これにより、図２の（Ｃ）に示すように、シート部材５が発光素子３の第１発光面３Ｅの側に接着された状態を維持する一方で、端子３Ｔの側が露出する。 Subsequently, as shown in FIG. 2B, the sheet member 5 is adhered to the side of the first light emitting surface 3E of the light emitting element 3. That is, the light emitting element 3 is temporarily located between the support 4 and the seat member 5, and is adhered to both the support 4 and the seat member 5. The arrangement pitch of the light emitting elements 3 may be converted on the support 4 before the sheet member 5 is adhered to the light emitting element 3. After that, the support 4 is peeled from the light emitting element 3 in a state where the adhesive force between the light emitting element 3 and the sheet member 5 is larger than the adhesive force between the light emitting element 3 and the support 4.
As a result, as shown in FIG. 2C, the sheet member 5 is maintained in a state of being adhered to the side of the first light emitting surface 3E of the light emitting element 3, while the side of the terminal 3T is exposed.

続いて、図２の（Ｄ）に示すように、発光素子３を移戴基板１０に載置する。移戴基板１０の詳細については後述するが、移戴基板１０は、発光素子３の端子３Ｔの側に接触する粘着性の保持面１０Ａを有している。なお、発光素子３が移戴基板１０に載置される以前に、シート部材５上において発光素子３の配列ピッチが変換されてもよい。必要に応じて、発光素子３が移戴基板１０に載置された後に、発光素子３とシート部材５との接着力が低下する処理（例えば紫外線照射処理）が追加されてもよい。その後、発光素子３とシート部材５との接着力が発光素子３と移戴基板１０との接着力より小さい状態で、発光素子３からシート部材５を剥離する。
これにより、図３の（Ｅ）に示すように、移戴基板１０が発光素子３の端子３Ｔの側に接着された状態を維持する一方で、第１発光面３Ｅの側が露出する。 Subsequently, as shown in FIG. 2D, the light emitting element 3 is placed on the transfer substrate 10. The details of the transfer substrate 10 will be described later, but the transfer substrate 10 has an adhesive holding surface 10A that comes into contact with the terminal 3T side of the light emitting element 3. The arrangement pitch of the light emitting elements 3 may be converted on the sheet member 5 before the light emitting element 3 is placed on the transfer substrate 10. If necessary, after the light emitting element 3 is placed on the transfer substrate 10, a treatment for reducing the adhesive force between the light emitting element 3 and the sheet member 5 (for example, an ultraviolet irradiation treatment) may be added. After that, the sheet member 5 is peeled from the light emitting element 3 in a state where the adhesive force between the light emitting element 3 and the sheet member 5 is smaller than the adhesive force between the light emitting element 3 and the transferred substrate 10.
As a result, as shown in FIG. 3 (E), the transfer substrate 10 is maintained in a state of being adhered to the terminal 3T side of the light emitting element 3, while the side of the first light emitting surface 3E is exposed.

続いて、図３の（Ｆ）に示すように、ピックアップ用の冶具１００を用いて発光素子３を移戴基板１０からピックアップする。冶具１００は、例えば真空吸着冶具であり、発光素子３の第１発光面３Ｅを吸着する。そして、冶具１００を移戴基板１０から離間する側に移動することで、発光素子３が移戴基板１０の保持面１０Ａから剥離される。 Subsequently, as shown in FIG. 3 (F), the light emitting element 3 is picked up from the transfer substrate 10 by using the pick-up jig 100. The jig 100 is, for example, a vacuum suction jig, and sucks the first light emitting surface 3E of the light emitting element 3. Then, by moving the jig 100 to the side away from the transfer substrate 10, the light emitting element 3 is peeled off from the holding surface 10A of the transfer substrate 10.

続いて、図３の（Ｇ）に示すように、冶具１００によって吸着された発光素子３を配線基板２の上方に移動し、配線基板２の所定位置に発光素子３を実装する。実装とは、発光素子３のアノード端子及びカソード端子の各々を、配線基板２に設けられたアノード電極及びカソード電極とそれぞれ電気的に接続することに相当する。なお、図３の（Ｆ）及び（Ｇ）には、冶具１００が１個の発光素子３を移戴する場合を示しているが、冶具１００が一括して複数の発光素子３を移戴することも可能である。 Subsequently, as shown in FIG. 3 (G), the light emitting element 3 attracted by the jig 100 is moved above the wiring board 2, and the light emitting element 3 is mounted at a predetermined position on the wiring board 2. Mounting corresponds to electrically connecting each of the anode terminal and the cathode terminal of the light emitting element 3 to the anode electrode and the cathode electrode provided on the wiring board 2, respectively. Note that FIGS. 3 (F) and 3 (G) show a case where the jig 100 transfers one light emitting element 3, but the jig 100 collectively transfers a plurality of light emitting elements 3. It is also possible.

次に、移戴基板１０について説明する。 Next, the transfer substrate 10 will be described.

図４は、移戴基板１０の一構成例を示す斜視図である。移戴基板１０において、発光素子３を保持する保持面１０Ａは、粘着性を有する凹凸面である。図４に示す構成例では、保持面１０Ａは、ベース部１０Ｂから突出した複数の凸部１０Ｖを有している。凸部１０Ｖの各々は、略半球状に形成されている。複数の凸部１０Ｖは、第１方向Ｘ及び第２方向Ｙにマトリクス状に配列されている。なお、凸部１０Ｖの形状は図示した例に限らず、円錐状、角錐状、円錐台状、角錐台状などであってもよい。また、凸部１０Ｖの配列は、図示した例に限らず、最密充填配列、千鳥配列、ランダム配列などであってもよい。
図中に点線で示す発光素子３が保持面１０Ａに保持された状態においては、１つの発光素子３は、第１方向Ｘに並んだ複数の凸部１０Ｖ、及び、第２方向Ｙに並んだ複数の凸部１０Ｖに重畳している。 FIG. 4 is a perspective view showing a configuration example of the transfer substrate 10. In the transfer substrate 10, the holding surface 10A for holding the light emitting element 3 is an uneven surface having adhesiveness. In the configuration example shown in FIG. 4, the holding surface 10A has a plurality of convex portions 10V protruding from the base portion 10B. Each of the convex portions 10V is formed in a substantially hemispherical shape. The plurality of convex portions 10V are arranged in a matrix in the first direction X and the second direction Y. The shape of the convex portion 10V is not limited to the illustrated example, and may be a conical shape, a pyramid shape, a truncated cone shape, a truncated pyramid shape, or the like. Further, the arrangement of the convex portions 10V is not limited to the illustrated example, and may be a tightly packed arrangement, a zigzag arrangement, a random arrangement, or the like.
In the state where the light emitting element 3 shown by the dotted line in the figure is held by the holding surface 10A, one light emitting element 3 is arranged in a plurality of convex portions 10V arranged in the first direction X and in the second direction Y. It is superimposed on a plurality of convex portions 10V.

このような移戴基板１０において、ベース部１０Ｂと凸部１０Ｖとが同一材料で形成されてもよいし、異なる材料で形成されてもよい。移戴基板１０のうち、少なくとも凸部１０Ｖは、例えば、シリコーン系、アクリル系、エポキシ系等の自己粘着性を有するとともに、弾性を有する材料を用いて形成されている。本実施形態では、移戴基板１０の全体が同一材料によって形成されている。移戴基板１０の作製方法としては、例えば、紫外線硬化型、熱硬化型、湿気硬化型などの材料を用いて成型する手法や、平板状の基材の表面にレーザー光を照射する手法、平板状の基材の表面をサンドブラスト加工する手法などが挙げられる。 In such a transfer substrate 10, the base portion 10B and the convex portion 10V may be formed of the same material or may be formed of different materials. Of the transferred substrate 10, at least the convex portion 10V is formed by using a material having self-adhesiveness such as silicone-based, acrylic-based, epoxy-based, and elasticity. In this embodiment, the entire transfer substrate 10 is made of the same material. Examples of the method for producing the transfer substrate 10 include a method of molding using a material such as an ultraviolet curable type, a thermosetting type, and a moisture curable type, a method of irradiating the surface of a flat base material with laser light, and a flat plate. Examples thereof include a method of sandblasting the surface of a shaped substrate.

図５は、移戴基板１０の一構成例を示す断面図である。ここでは、図４に示したＡ−Ｂ線に沿った移戴基板１０の断面を図示している。凸部１０Ｖの断面形状は、半円形である。 FIG. 5 is a cross-sectional view showing a configuration example of the transfer substrate 10. Here, the cross section of the transfer substrate 10 along the line AB shown in FIG. 4 is shown. The cross-sectional shape of the convex portion 10V is semi-circular.

まず、凸部１０Ｖの幅Ｗに着目する。ここでの幅Ｗは、凸部１０Ｖの第１方向Ｘに沿った長さに相当する。凸部１０Ｖが図４に示したような半球状に形成されている場合、幅Ｗは凸部１０Ｖを平面視した際の直径に相当する。凸部１０Ｖの底部側（ベース部１０Ｂに近接する側）の幅Ｗ１は、凸部１０Ｖの頂部側（底部の反対側、あるいは、発光素子３に接する側）の幅Ｗ２より大きい（Ｗ１＞Ｗ２）。凸部１０Ｖの底部（ベース部１０Ｂに接する部分）における幅Ｗは、例えば１乃至２００μｍである。１つの凸部１０Ｖの幅Ｗは、複数の凸部１０Ｖと１つの発光素子３とが重畳するように、発光素子３のサイズなどを考慮して設定される。例えば、発光素子３がミニＬＥＤである場合、幅Ｗは、１０乃至５０μｍであることが望ましい。また、発光素子３がマイクロＬＥＤである場合、幅Ｗは、２乃至２５μｍであることが望ましい。 First, pay attention to the width W of the convex portion 10V. The width W here corresponds to the length of the convex portion 10V along the first direction X. When the convex portion 10V is formed in a hemispherical shape as shown in FIG. 4, the width W corresponds to the diameter when the convex portion 10V is viewed in a plan view. The width W1 on the bottom side of the convex portion 10V (the side close to the base portion 10B) is larger than the width W2 on the top side (opposite side of the bottom portion or the side in contact with the light emitting element 3) of the convex portion 10V (W1> W2). ). The width W at the bottom of the convex portion 10V (the portion in contact with the base portion 10B) is, for example, 1 to 200 μm. The width W of one convex portion 10V is set in consideration of the size of the light emitting element 3 and the like so that the plurality of convex portions 10V and one light emitting element 3 overlap each other. For example, when the light emitting element 3 is a mini LED, the width W is preferably 10 to 50 μm. When the light emitting element 3 is a micro LED, the width W is preferably 2 to 25 μm.

続いて、凸部１０Ｖの高さＨに着目する。ここでの高さＨは、ベース部１０Ｂから突出した部分の第３方向（ベース部１０Ｂの法線方向）Ｚに沿った長さに相当する。高さＨは、発光素子３の端子３Ｔの高さＨｔより大きく（Ｈ＞Ｈｔ）、例えば０．５乃至５０μｍである。発光素子３がミニＬＥＤである場合、高さＨは、１０乃至５０μｍであることが望ましい。また、発光素子３がマイクロＬＥＤである場合、高さＨは、０．５乃至２５μｍであることが望ましい。 Next, pay attention to the height H of the convex portion 10V. The height H here corresponds to the length along the third direction (normal direction of the base portion 10B) Z of the portion protruding from the base portion 10B. The height H is larger than the height Ht of the terminal 3T of the light emitting element 3 (H> Ht), for example, 0.5 to 50 μm. When the light emitting element 3 is a mini LED, the height H is preferably 10 to 50 μm. When the light emitting element 3 is a micro LED, the height H is preferably 0.5 to 25 μm.

続いて、隣接する凸部１０ＶのピッチＰに着目する。ここでのピッチＰは、第１方向Ｘに隣接する凸部１０Ｖの頂部間の第１方向Ｘに沿った長さに相当する。ピッチＰは、例えば１００μｍ以下である。ピッチＰは、複数の凸部１０Ｖと１つの発光素子３とが重畳するように、発光素子３のサイズなどを考慮して設定される。例えば、発光素子３がミニＬＥＤである場合、ピッチＰは、凸部１０Ｖの幅Ｗ以上、１００μｍ以下であることが望ましい。また、発光素子３がマイクロＬＥＤである場合、ピッチＰは、凸部１０Ｖの幅Ｗ以上、５０μｍ以下であることが望ましい。隣接する凸部１０Ｖがそれぞれの底部で接するように並んでいる場合、ピッチＰは、幅Ｗと同等である。 Next, pay attention to the pitch P of the adjacent convex portion 10V. The pitch P here corresponds to the length along the first direction X between the tops of the convex portions 10V adjacent to the first direction X. The pitch P is, for example, 100 μm or less. The pitch P is set in consideration of the size of the light emitting element 3 and the like so that the plurality of convex portions 10V and one light emitting element 3 overlap each other. For example, when the light emitting element 3 is a mini LED, the pitch P is preferably a width W or more and 100 μm or less of the convex portion 10V. When the light emitting element 3 is a micro LED, the pitch P is preferably a width W or more and 50 μm or less of the convex portion 10V. When the adjacent convex portions 10V are arranged so as to be in contact with each other at the bottom portions, the pitch P is equivalent to the width W.

上述したような凹凸面である保持面１０Ａは、他の観点では、隣接する凸部１０Ｖの間に凹部１０Ｃを有するものとみなすことができる。 From another point of view, the holding surface 10A, which is the uneven surface as described above, can be regarded as having the concave portion 10C between the adjacent convex portions 10V.

図５に示す構成例では、複数の凸部１０Ｖがすべて同一形状を有しているが、複数の凸部１０Ｖのうち、異なる形状を有する凸部１０Ｖが含まれていてもよい。また、隣接する凸部１０Ｖが異なる幅を有していたり、異なる高さを有していたりしてもよい。 In the configuration example shown in FIG. 5, the plurality of convex portions 10V all have the same shape, but among the plurality of convex portions 10V, the convex portions 10V having different shapes may be included. Further, the adjacent convex portions 10V may have different widths or different heights.

図６は、移戴基板１０における発光素子３の移戴工程を説明するための図である。
図６の（Ａ）は、図２の（Ｄ）に示した工程すなわち発光素子３を移戴基板１０に載置する工程を示す図である。シート部材５に接着された発光素子３を移戴基板１０に押し付けると、保持面１０Ａにおいて凸部１０Ｖが潰れるように変形する。これにより、発光素子３と移戴基板１０との接着力が発光素子３とシート部材５との接着力より大きくなる程度に、発光素子３と保持面１０Ａとの接触面積が確保される。したがって、発光素子３からシート部材５を容易に剥離することができる。発光素子３と移戴基板１０との接着力は、自己粘着性の保持面１０Ａの粘着力に加えて、発光素子３と保持面１０Ａとの接触面積（あるいは、発光素子３を移戴基板１０に押し付ける力）によって調整することができる。 FIG. 6 is a diagram for explaining a transfer process of the light emitting element 3 in the transfer substrate 10.
FIG. 6A is a diagram showing a step shown in FIG. 2D, that is, a step of mounting the light emitting element 3 on the transfer substrate 10. When the light emitting element 3 adhered to the sheet member 5 is pressed against the transfer substrate 10, the convex portion 10V is deformed so as to be crushed on the holding surface 10A. As a result, the contact area between the light emitting element 3 and the holding surface 10A is secured so that the adhesive force between the light emitting element 3 and the transferred substrate 10 becomes larger than the adhesive force between the light emitting element 3 and the sheet member 5. Therefore, the sheet member 5 can be easily peeled off from the light emitting element 3. The adhesive force between the light emitting element 3 and the transfer substrate 10 is the contact area between the light emitting element 3 and the holding surface 10A (or the light emitting element 3 is transferred to the transfer substrate 10) in addition to the adhesive force of the self-adhesive holding surface 10A. It can be adjusted by the force that presses against.

図６の（Ｂ）は、図３の（Ｆ）に示した工程すなわち発光素子３を移戴基板１０からピックアップする工程を示す図である。発光素子３がシート部材５から移戴基板１０に移戴された後には、凸部１０Ｖの形状が復元するため、発光素子３と保持面１０Ａとの接触面積が低減する。つまり、発光素子３と移戴基板１０との接着力が低減する。このため、冶具１００を用いて発光素子３をピックアップする際に、微弱な力でピックアップすることができる。 FIG. 6B is a diagram showing a step shown in FIG. 3F, that is, a step of picking up the light emitting element 3 from the transfer substrate 10. After the light emitting element 3 is transferred from the sheet member 5 to the transferred substrate 10, the shape of the convex portion 10V is restored, so that the contact area between the light emitting element 3 and the holding surface 10A is reduced. That is, the adhesive force between the light emitting element 3 and the transferred substrate 10 is reduced. Therefore, when the light emitting element 3 is picked up by using the jig 100, it can be picked up with a weak force.

比較例として移戴基板１０の保持面１０Ａが平坦である場合、保持面１０Ａは発光素子３の端子側の面の略全体と接触する。このため、保持面１０Ａにおける発光素子３の接着力は、保持面１０Ａを構成する材料の物性に依存する。このような場合、図３の（Ｆ）に示したような発光素子３のピックアップ工程において、発光素子３と移戴基板１０との接着力が強すぎた場合に、発光素子３をスムースにピックアップすることができず、冶具１００の吸着力あるいは冶具１００と発光素子３との接着力を増強する必要がある。 As a comparative example, when the holding surface 10A of the transfer substrate 10 is flat, the holding surface 10A comes into contact with substantially the entire surface of the light emitting element 3 on the terminal side. Therefore, the adhesive force of the light emitting element 3 on the holding surface 10A depends on the physical properties of the material constituting the holding surface 10A. In such a case, in the pick-up process of the light emitting element 3 as shown in FIG. 3 (F), when the adhesive force between the light emitting element 3 and the transferred substrate 10 is too strong, the light emitting element 3 is smoothly picked up. It is necessary to enhance the adsorption force of the jig 100 or the adhesive force between the jig 100 and the light emitting element 3.

本実施形態によれば、凹凸面である保持面１０Ａを有する移戴基板１０を適用することにより、発光素子３を移戴基板１０にスムースに移戴することができ、発光素子の移戴効率を改善することができる。 According to the present embodiment, by applying the transfer substrate 10 having the holding surface 10A which is an uneven surface, the light emitting element 3 can be smoothly transferred to the transfer substrate 10, and the transfer efficiency of the light emitting element can be obtained. Can be improved.

次に、移戴基板１０の他の構成例について説明する。 Next, another configuration example of the transfer substrate 10 will be described.

図７は、移戴基板１０の他の構成例を示す断面図である。
図７の（Ａ）は、凸部１０Ｖの断面形状が半楕円形である移戴基板１０を示している。
図７の（Ｂ）は、凸部１０Ｖの断面形状が三角形である移戴基板１０を示している。凸部１０Ｖが円錐状あるいは角錐状に形成されている場合に、図示したような三角形の断面形状が形成される。
図７の（Ｃ）は、凸部１０Ｖの断面形状が台形である移戴基板１０を示している。凸部１０Ｖが円錐台状あるいは角錐台状に形成されている場合に、図示したような台形の断面形状が形成される。 FIG. 7 is a cross-sectional view showing another configuration example of the transfer substrate 10.
FIG. 7A shows a transfer substrate 10 having a semi-elliptical cross-sectional shape of the convex portion 10V.
FIG. 7B shows a transfer substrate 10 having a triangular cross-sectional shape of the convex portion 10V. When the convex portion 10V is formed in a conical shape or a pyramid shape, a triangular cross-sectional shape as shown in the figure is formed.
FIG. 7C shows a transfer substrate 10 having a trapezoidal cross-sectional shape of the convex portion 10V. When the convex portion 10V is formed in a truncated cone shape or a pyramidal trapezoidal shape, a trapezoidal cross-sectional shape as shown in the figure is formed.

図８は、移戴基板１０の他の構成例を示す断面図である。図８に示す構成例は、図５に示した構成例と比較して、隣接する凸部１０Ｖが隙間をおいて並んでいる点で相違している。このような構成例においては、隣接する凸部１０ＶのピッチＰは、凸部１０Ｖの幅Ｗより大きいが、１００μｍ以下であることが望ましい。
ここでは、凸部１０Ｖの断面形状は半円形であるが、図７に示したように、半楕円形、三角形、台形などであってもよい。 FIG. 8 is a cross-sectional view showing another configuration example of the transfer substrate 10. The configuration example shown in FIG. 8 is different from the configuration example shown in FIG. 5 in that adjacent convex portions 10V are lined up with a gap. In such a configuration example, the pitch P of the adjacent convex portions 10V is larger than the width W of the convex portions 10V, but is preferably 100 μm or less.
Here, the cross-sectional shape of the convex portion 10V is semicircular, but as shown in FIG. 7, it may be semi-elliptical, triangular, trapezoidal, or the like.

図９は、移戴基板１０の他の構成例を示す斜視図である。図９に示す構成例は、図４に示した構成例と比較して、凸部１０Ｖが一方向に延出した形状である点で相違している。ここでは、複数の凸部１０Ｖは第１方向Ｘに並び、凸部１０Ｖの各々は第２方向Ｙに延出している。隣接する凸部１０Ｖは、互いに接して並んでいるが、図８に示した構成例のように隙間をおいて並んでいてもよい。また、Ｘ−Ｚ平面において、凸部１０Ｖの断面形状は、半円形であるが、半楕円形、三角形、台形などであってもよい。 FIG. 9 is a perspective view showing another configuration example of the transfer substrate 10. The configuration example shown in FIG. 9 is different from the configuration example shown in FIG. 4 in that the convex portion 10V has a shape extending in one direction. Here, the plurality of convex portions 10V are arranged in the first direction X, and each of the convex portions 10V extends in the second direction Y. Although the adjacent convex portions 10V are lined up in contact with each other, they may be lined up with a gap as in the configuration example shown in FIG. Further, in the XZ plane, the cross-sectional shape of the convex portion 10V is semicircular, but may be semi-elliptical, triangular, trapezoidal or the like.

図１０は、移戴基板１０の他の構成例を示す斜視図である。図４に示した構成例と同様に、移戴基板１０において、発光素子３を保持する保持面１０Ａは、粘着性を有する凹凸面である。保持面１０Ａは、複数の凹部１０Ｃを有している。凹部１０Ｃの各々は、略半球状に形成されているが、凹部１０Ｃの形状は図示した例に限らず、円錐状、角錐状、円錐台状、角錐台状などであってもよい。複数の凹部１０Ｃは、第１方向Ｘ及び第２方向Ｙにマトリクス状に配列されているが、凹部１０Ｃの配列は図示した例に限らず、最密充填配列、千鳥配列、ランダム配列などであってもよい。
図中に点線で示す発光素子３が保持面１０Ａに保持された状態においては、１つの発光素子３は、第１方向Ｘに並んだ複数の凹部１０Ｃ、及び、第２方向Ｙに並んだ複数の凹部１０Ｃに重畳している。 FIG. 10 is a perspective view showing another configuration example of the transfer substrate 10. Similar to the configuration example shown in FIG. 4, in the transfer substrate 10, the holding surface 10A for holding the light emitting element 3 is a concavo-convex surface having adhesiveness. The holding surface 10A has a plurality of recesses 10C. Each of the recesses 10C is formed in a substantially hemispherical shape, but the shape of the recesses 10C is not limited to the illustrated example, and may be a cone, a pyramid, a truncated cone, a truncated cone, or the like. The plurality of recesses 10C are arranged in a matrix in the first direction X and the second direction Y, but the arrangement of the recesses 10C is not limited to the illustrated example, and may be a tightly packed arrangement, a staggered arrangement, a random arrangement, or the like. You may.
In the state where the light emitting element 3 shown by the dotted line in the figure is held by the holding surface 10A, one light emitting element 3 has a plurality of recesses 10C arranged in the first direction X and a plurality of recesses 10C arranged in the second direction Y. It is superimposed on the recess 10C of.

図１１は、移戴基板１０の一構成例を示す断面図である。ここでは、図１０に示したＣ−Ｄ線に沿った移戴基板１０の断面を図示している。凹部１０Ｃの断面形状は、半円形である。 FIG. 11 is a cross-sectional view showing a configuration example of the transfer substrate 10. Here, the cross section of the transfer substrate 10 along the CD line shown in FIG. 10 is shown. The cross-sectional shape of the recess 10C is semi-circular.

まず、凹部１０Ｃの幅Ｗに着目する。ここでの幅Ｗは、凹部１０Ｃの第１方向Ｘに沿った長さに相当する。凹部１０Ｃが図１０に示したような半球状に形成されている場合、幅Ｗは凹部１０Ｃを平面視した際の直径に相当する。凹部１０Ｃの底部側の幅Ｗ１は、凹部１０Ｃの上部側の幅Ｗ２より小さい（Ｗ２＞Ｗ１）。凹部１０Ｃの上部における幅Ｗは、図５を参照して説明した凸部１０Ｖの幅Ｗと同様に、例えば、１乃至２００μｍである。
続いて、凹部１０Ｃの高さ（あるいは深さ）Ｈに着目する。ここでの高さＨは、第３方向Ｚに沿った長さに相当する。凹部１０Ｃの高さＨは、凸部１０Ｖの高さＨと同様に、例えば、０．５乃至５０μｍである。
続いて、隣接する凹部１０ＣのピッチＰに着目する。ここでのピッチＰは、第１方向Ｘに隣接する凹部１０Ｃの底部間の第１方向Ｘに沿った長さに相当する。凹部１０ＣのピッチＰは、凸部１０ＶのピッチＰと同様に、例えば、凹部１０Ｃの幅Ｗ以上、１００μｍ以下である。
上述したような凹凸面である保持面１０Ａは、他の観点では、隣接する凹部１０Ｃの間に凸部１０Ｖを有するものとみなすことができる。 First, pay attention to the width W of the recess 10C. The width W here corresponds to the length of the recess 10C along the first direction X. When the recess 10C is formed in a hemispherical shape as shown in FIG. 10, the width W corresponds to the diameter when the recess 10C is viewed in a plan view. The width W1 on the bottom side of the recess 10C is smaller than the width W2 on the upper side of the recess 10C (W2> W1). The width W at the upper portion of the concave portion 10C is, for example, 1 to 200 μm, similarly to the width W of the convex portion 10V described with reference to FIG.
Next, pay attention to the height (or depth) H of the recess 10C. The height H here corresponds to the length along the third direction Z. The height H of the concave portion 10C is, for example, 0.5 to 50 μm, similarly to the height H of the convex portion 10V.
Next, pay attention to the pitch P of the adjacent recesses 10C. The pitch P here corresponds to the length along the first direction X between the bottoms of the recesses 10C adjacent to the first direction X. The pitch P of the concave portion 10C is, for example, the width W or more and 100 μm or less of the concave portion 10C, similarly to the pitch P of the convex portion 10V.
From another point of view, the holding surface 10A, which is the uneven surface as described above, can be regarded as having a convex portion 10V between the adjacent concave portions 10C.

図１１に示す構成例では、複数の凹部１０Ｃがすべて同一形状を有しているが、複数の凹部１０Ｃのうち、異なる形状を有する凹部１０Ｃが含まれていてもよい。また、隣接する凹部１０Ｃが異なる幅を有していたり、異なる高さを有していたりしてもよい。 In the configuration example shown in FIG. 11, the plurality of recesses 10C all have the same shape, but among the plurality of recesses 10C, recesses 10C having different shapes may be included. Further, the adjacent recesses 10C may have different widths or different heights.

図１２は、移戴基板１０の他の構成例を示す断面図である。
図１２の（Ａ）は、凹部１０Ｃの断面形状が半楕円形である移戴基板１０を示している。
図１２の（Ｂ）は、凹部１０Ｃの断面形状が三角形である移戴基板１０を示している。凹部１０Ｃが円錐状あるいは角錐状に形成されている場合に、図示したような三角形の断面形状が形成される。
図１２の（Ｃ）は、凹部１０Ｃの断面形状が台形である移戴基板１０を示している。凹部１０Ｃが円錐台状あるいは角錐台状に形成されている場合に、図示したような台形の断面形状が形成される。 FIG. 12 is a cross-sectional view showing another configuration example of the transfer substrate 10.
FIG. 12A shows a transfer substrate 10 having a semi-elliptical cross-sectional shape of the recess 10C.
FIG. 12B shows a transfer substrate 10 having a triangular cross-sectional shape of the recess 10C. When the recess 10C is formed in a conical or pyramidal shape, a triangular cross-sectional shape as shown in the figure is formed.
FIG. 12C shows a transfer substrate 10 having a trapezoidal cross-sectional shape of the recess 10C. When the recess 10C is formed in the shape of a truncated cone or a truncated cone, a trapezoidal cross-sectional shape as shown in the figure is formed.

図１３は、移戴基板１０の他の構成例を示す断面図である。図１３に示す構成例は、図１１に示した構成例と比較して、隣接する凹部１０Ｃが隙間をおいて並んでいる点で相違している。このような構成例においては、隣接する凹部１０ＣのピッチＰは、凹部１０Ｃの幅Ｗより大きいが、１００μｍ以下であることが望ましい。
ここでは、凹部１０Ｃの断面形状は半円形であるが、図１２に示したように、半楕円形、三角形、台形などであってもよい。 FIG. 13 is a cross-sectional view showing another configuration example of the transfer substrate 10. The configuration example shown in FIG. 13 is different from the configuration example shown in FIG. 11 in that adjacent recesses 10C are lined up with a gap. In such a configuration example, the pitch P of the adjacent recesses 10C is larger than the width W of the recesses 10C, but is preferably 100 μm or less.
Here, the cross-sectional shape of the recess 10C is semi-circular, but as shown in FIG. 12, it may be semi-elliptical, triangular, trapezoidal, or the like.

図１４は、移戴基板１０の他の構成例を示す斜視図である。図１４に示す構成例は、図１０に示した構成例と比較して、凹部１０Ｃが一方向に延出した形状である点で相違している。ここでは、複数の凹部１０Ｃは第１方向Ｘに並び、凹部１０Ｃの各々は第２方向Ｙに延出している。隣接する凹部１０Ｃは、互いに接して並んでいるが、図１３に示した構成例のように隙間をおいて並んでいてもよい。また、Ｘ−Ｚ平面において、凹部１０Ｃの断面形状は、半円形であるが、半楕円形、三角形、台形などであってもよい。 FIG. 14 is a perspective view showing another configuration example of the transfer substrate 10. The configuration example shown in FIG. 14 is different from the configuration example shown in FIG. 10 in that the recess 10C has a shape extending in one direction. Here, the plurality of recesses 10C are arranged in the first direction X, and each of the recesses 10C extends in the second direction Y. Although the adjacent recesses 10C are lined up in contact with each other, they may be lined up with a gap as in the configuration example shown in FIG. Further, in the XZ plane, the cross-sectional shape of the recess 10C is semicircular, but may be semi-elliptical, triangular, trapezoidal or the like.

上記の図７乃至図１４を参照して説明した他の構成例においても、図４などに示した構成例と同様の効果が得られる。 Also in the other configuration examples described with reference to FIGS. 7 to 14 above, the same effect as that of the configuration example shown in FIG. 4 and the like can be obtained.

以上説明したように、本実施形態によれば、発光素子の移戴効率を改善することが可能な移戴基板を提供することができる。 As described above, according to the present embodiment, it is possible to provide a transfer substrate capable of improving the transfer efficiency of the light emitting element.

なお、この発明は、上記実施形態そのものに限定されるものではなく、その実施の段階ではその要旨を逸脱しない範囲で構成要素を変形して具体化できる。また、上記実施形態に開示されている複数の構成要素の適宜な組み合せにより種々の発明を形成できる。例えば、実施形態に示される全構成要素から幾つかの構成要素を削除してもよい。更に、異なる実施形態に亘る構成要素を適宜組み合せてもよい。 The present invention is not limited to the above embodiment itself, and at the stage of its implementation, the components can be modified and embodied within a range that does not deviate from the gist thereof. In addition, various inventions can be formed by an appropriate combination of the plurality of components disclosed in the above-described embodiment. For example, some components may be removed from all the components shown in the embodiments. In addition, components from different embodiments may be combined as appropriate.

１…発光装置 ２…配線基板 ３…発光素子
１０…移戴基板 １０Ａ…保持面 １０Ｖ…凸部 １０Ｃ…凹部 1 ... Light emitting device 2 ... Wiring board 3 ... Light emitting element 10 ... Transfer board 10A ... Holding surface 10V ... Convex part 10C ... Concave part

Claims (15)

発光素子を一時的に保持する移戴基板であって、
発光素子の端子側に接触する保持面を有し、
前記保持面は、粘着性の凹凸面である、移戴基板。 A transfer substrate that temporarily holds the light emitting element.
It has a holding surface that contacts the terminal side of the light emitting element, and has a holding surface.
The holding surface is a transfer substrate which is an adhesive uneven surface. 発光素子が前記保持面に保持された状態において、
前記保持面は、１つの発光素子に重畳する複数の凸部を有している、請求項１に記載の移戴基板。 In a state where the light emitting element is held on the holding surface,
The transfer substrate according to claim 1, wherein the holding surface has a plurality of convex portions superimposed on one light emitting element. 前記凸部の断面において、底部側の幅は、頂部側の幅より大きい、請求項２に記載の移戴基板。 The transfer substrate according to claim 2, wherein in the cross section of the convex portion, the width on the bottom side is larger than the width on the top side. 前記凸部の幅は、２乃至５０μｍである、請求項３に記載の移戴基板。 The transfer substrate according to claim 3, wherein the width of the convex portion is 2 to 50 μm. 前記凸部の高さは、０．５乃至５０μｍである、請求項３に記載の移戴基板。 The transfer substrate according to claim 3, wherein the height of the convex portion is 0.5 to 50 μm. 隣接する前記凸部のピッチは、１００μｍ以下である、請求項３に記載の移戴基板。 The transfer substrate according to claim 3, wherein the pitch of the adjacent convex portions is 100 μm or less. 前記凸部の断面形状は、半円形、半楕円形、三角形、及び、台形のいずれかである、請求項３に記載の移戴基板。 The transfer substrate according to claim 3, wherein the cross-sectional shape of the convex portion is any one of semicircular, semi-elliptical, triangular, and trapezoidal. 前記保持面が発光素子を保持した状態で、
前記保持面は、平面視において、１つの発光素子に重畳する複数の凹部を有している、請求項１に記載の移戴基板。 With the holding surface holding the light emitting element,
The transfer substrate according to claim 1, wherein the holding surface has a plurality of recesses superposed on one light emitting element in a plan view. 前記凹部の断面において、底部の幅は、上部の幅より小さい、請求項８に記載の移戴基板。 The transfer substrate according to claim 8, wherein in the cross section of the recess, the width of the bottom is smaller than the width of the top. 前記凹部の幅は、２乃至５０μｍである、請求項８に記載の移戴基板。 The transfer substrate according to claim 8, wherein the width of the recess is 2 to 50 μm. 前記凹部の高さは、０．５乃至５０μｍである、請求項８に記載の移戴基板。 The transfer substrate according to claim 8, wherein the height of the recess is 0.5 to 50 μm. 隣接する前記凹部のピッチは、１００μｍ以下である、請求項８に記載の移戴基板。 The transfer substrate according to claim 8, wherein the pitch of the adjacent recesses is 100 μm or less. 前記凹部の断面形状は、半円形、半楕円形、三角形、及び、台形のいずれかである、請求項８に記載の移戴基板。 The transfer substrate according to claim 8, wherein the cross-sectional shape of the recess is any of semicircular, semi-elliptical, triangular, and trapezoidal. 発光素子を一時的に保持する移戴基板であって、
発光素子の端子側に接触する保持面を有し、
発光素子が前記保持面に保持された状態において、
前記保持面は、１つの発光素子に重畳する複数の凸部を有している、移戴基板。 A transfer substrate that temporarily holds the light emitting element.
It has a holding surface that contacts the terminal side of the light emitting element, and has a holding surface.
In a state where the light emitting element is held on the holding surface,
The holding surface is a transfer substrate having a plurality of convex portions superimposed on one light emitting element. 発光素子を一時的に保持する移戴基板であって、
発光素子の端子側に接触する保持面を有し、
発光素子が前記保持面に保持された状態において、
前記保持面は、１つの発光素子に重畳する複数の凹部を有している、移戴基板。 A transfer substrate that temporarily holds the light emitting element.
It has a holding surface that contacts the terminal side of the light emitting element, and has a holding surface.
In a state where the light emitting element is held on the holding surface,
The holding surface is a transfer substrate having a plurality of recesses superposed on one light emitting element.
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WO2024063124A1 (en) * 2022-09-22 2024-03-28 リンテック株式会社 Adhesive sheet
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