JP2021106209A - Cleaning device and polishing device - Google Patents

Cleaning device and polishing device Download PDF

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JP2021106209A
JP2021106209A JP2019236617A JP2019236617A JP2021106209A JP 2021106209 A JP2021106209 A JP 2021106209A JP 2019236617 A JP2019236617 A JP 2019236617A JP 2019236617 A JP2019236617 A JP 2019236617A JP 2021106209 A JP2021106209 A JP 2021106209A
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Prior art keywords
cleaning
wafer
cleaning member
swing
tank
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JP7450385B2 (en
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宮▲崎▼ 充
Mitsuru Miyazaki
充 宮▲崎▼
井上 拓也
Takuya Inoue
拓也 井上
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Ebara Corp
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Ebara Corp
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Priority to JP2019236617A priority Critical patent/JP7450385B2/en
Priority to US17/128,643 priority patent/US11948811B2/en
Priority to KR1020200180657A priority patent/KR20210083192A/en
Priority to CN202011560759.7A priority patent/CN113043158B/en
Priority to TW109146118A priority patent/TW202132049A/en
Publication of JP2021106209A publication Critical patent/JP2021106209A/en
Priority to US18/444,981 priority patent/US20240194498A1/en
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Abstract

To provide a cleaning device capable of moving a cleaning member from a retracted position to a cleaning position, in which the footprint of a cleaning tank can be reduced.SOLUTION: A cleaning device 16 includes: a cleaning tank 41 defining a cleaning space where a wafer W is cleaned; a wafer rotation mechanism 42 arranged inside the cleaning tank 41 to hold and rotate the wafer; a cleaning member 43 rotatable around a central axis line that extends in a longitudinal direction, the cleaning member 43 contacting and cleaning the surface of the wafer; and a swing mechanism 44 swinging the cleaning member 43 around a swing axis line that is located inside the cleaning tank 41 and moving the cleaning member from a retracted position outside the wafer W to a cleaning position directly above the wafer W. The length of the cleaning member 43 is longer than the radius of the wafer W, and a distance from the center of the cleaning member 43 to the swing axis line is smaller than the diameter of the wafer W. The cleaning member 43 passes directly above the center of the wafer W when the swing mechanism 44 swings the cleaning member 43 around the swing axis line.SELECTED DRAWING: Figure 2

Description

本発明は、洗浄装置、研磨装置に関する。 The present invention relates to a cleaning device and a polishing device.

半導体デバイスの製造工程においては、半導体ウェハ等の基板の表面に成膜、エッチング、研磨などの各種処理が施される。これら各種処理の前後には、基板の表面を洗浄に保つ必要があるため、基板の洗浄処理が行われる。基板の洗浄処理には、基板の周縁部を複数のローラによって保持しつつローラを回転駆動することにより基板を回転させ、回転する基板に洗浄部材を押し当てて洗浄する洗浄機が広く用いられている。 In the process of manufacturing a semiconductor device, various treatments such as film formation, etching, and polishing are performed on the surface of a substrate such as a semiconductor wafer. Before and after these various treatments, it is necessary to keep the surface of the substrate for cleaning, so that the substrate is cleaned. For the cleaning process of a substrate, a cleaning machine is widely used in which the peripheral portion of the substrate is held by a plurality of rollers and the rollers are rotationally driven to rotate the substrate, and a cleaning member is pressed against the rotating substrate to clean the substrate. There is.

特許文献1には、洗浄部材としてロール状のスポンジを使用したロール洗浄機が開示されている。特許文献1の洗浄機は、ロール状のスポンジからなる洗浄部材を、X軸方向に延びるガイドレールに沿って走行(並行)させて、ウェハを洗浄する洗浄位置からウェハの外側の待避位置まで移動させる駆動機構を有している。 Patent Document 1 discloses a roll cleaning machine using a roll-shaped sponge as a cleaning member. The cleaning machine of Patent Document 1 moves (parallel) a cleaning member made of a roll-shaped sponge along a guide rail extending in the X-axis direction from a cleaning position for cleaning the wafer to a shelter position on the outside of the wafer. It has a drive mechanism to make it.

特開平11−238713号公報Japanese Unexamined Patent Publication No. 11-238713

特許文献1の洗浄機において、洗浄部材を洗浄位置から待避位置まで移動させる駆動機構は、洗浄槽の内側に設けられている。そのため、洗浄槽のフットプリントを小さくすることが困難である。 In the washing machine of Patent Document 1, a drive mechanism for moving the washing member from the washing position to the retreat position is provided inside the washing tank. Therefore, it is difficult to reduce the footprint of the washing tank.

ウェハの大きさに比べて十分に狭隘な洗浄槽にするために、駆動機構を洗浄槽の外側に配置するとともに、洗浄位置から待避位置まで駆動機構を走行させるための大きな開口を洗浄槽の側壁に形成し、当該開口をシャッタで開閉させる構成が考えられる。 In order to make the cleaning tank sufficiently narrow compared to the size of the wafer, the drive mechanism is arranged outside the cleaning tank, and a large opening for running the drive mechanism from the cleaning position to the shelter position is provided on the side wall of the cleaning tank. It is conceivable that the opening is opened and closed by a shutter.

しかしながら、このような構成では、シャッタが開口している状態で薬液の供給が行われると、ウェハ洗浄やスクラブ洗浄時の薬液が槽外に飛散するリスクあるため、シャッタの開口時には液供給系を停止状態にする必要があり、タイムロス(OHT)が発生する。また、シャッタの開口時はもとより、シャッタの閉口時であっても、洗浄槽の側壁とシャッタとの間には幾分の隙間があるため、この隙間から薬液雰囲気が洗浄槽の外側へ漏洩するリスクがある。 However, in such a configuration, if the chemical solution is supplied while the shutter is open, there is a risk that the chemical solution during wafer cleaning or scrubbing is scattered outside the tank. Therefore, when the shutter is opened, the liquid supply system is used. It is necessary to put it in a stopped state, and a time loss (OHT) occurs. Further, since there is a certain gap between the side wall of the cleaning tank and the shutter not only when the shutter is opened but also when the shutter is closed, the chemical atmosphere leaks to the outside of the cleaning tank from this gap. There is a risk.

本発明は、以上のような点を考慮してなされたものでる。本発明の目的は、洗浄部材を退避位置から洗浄位置まで移動可能な洗浄装置、研磨装置において、洗浄槽の側壁に走行用の開口を形成することなく、洗浄槽のフットプリントを小さくできる洗浄装置、研磨装置を提供することにある。 The present invention has been made in consideration of the above points. An object of the present invention is a cleaning device and a polishing device capable of moving a cleaning member from a retracted position to a cleaning position, in which a cleaning device capable of reducing the footprint of the cleaning tank without forming a running opening on the side wall of the cleaning tank. , To provide a polishing device.

本発明の第1の態様に係る洗浄装置は、
ウェハの洗浄を行う洗浄空間を画定する洗浄槽と、
前記洗浄槽の内側に配置され、前記ウェハを保持して回転させるウェハ回転機構と、
前記ウェハの表面に接触して洗浄する洗浄部材であって、横方向に延びる中心軸線回りに回転可能な洗浄部材と、
前記洗浄部材を、前記洗浄槽の内側に位置する揺動軸線回りに揺動させて、前記ウェハの外側の待避位置から前記ウェハの直上の洗浄位置まで移動させる揺動機構と、
を備え、
前記洗浄部材の長さは、前記ウェハの半径よりも長く、
前記洗浄部材の中心から前記揺動軸線までの距離は、前記ウェハの直径より小さく、
前記揺動機構が前記洗浄部材を前記揺動軸線回りに揺動させる際に、前記洗浄部材は前記ウェハの中心の直上を通過する。
The cleaning device according to the first aspect of the present invention is
A cleaning tank that defines a cleaning space for cleaning wafers,
A wafer rotation mechanism that is arranged inside the washing tank and holds and rotates the wafer,
A cleaning member that comes into contact with the surface of the wafer to clean the wafer, and is a cleaning member that can rotate around the central axis extending in the lateral direction.
An oscillating mechanism that oscillates the cleaning member around an oscillating axis located inside the cleaning tank to move the cleaning member from a shelter position on the outside of the wafer to a cleaning position directly above the wafer.
With
The length of the cleaning member is longer than the radius of the wafer.
The distance from the center of the cleaning member to the swing axis is smaller than the diameter of the wafer.
When the swing mechanism swings the cleaning member around the swing axis, the cleaning member passes directly above the center of the wafer.

このような態様によれば、洗浄部材がウェハの半径より長い長尺な部材であっても、洗浄部材の中心から揺動軸線までの距離がウェハの直径より小さくなるように規定されており、洗浄部材を当該揺動軸線回りに揺動させることで待避位置から洗浄位置まで移動させるため、洗浄部材を待避位置から洗浄位置まで直線移動(走行)させる場合に比べて、洗浄部材を洗浄位置から待避位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を低減できる。また、揺動軸線が洗浄槽の内側に位置するため、洗浄槽の側壁に走行用の開口を形成する必要がない。したがって、洗浄部材を退避位置から洗浄位置まで移動可能な洗浄装置において、洗浄槽の側壁に走行用の開口を形成することなく、洗浄槽のフットプリントを小さくすることが可能となる。また、洗浄槽の側壁に走行用の開口を形成する必要がないため、洗浄槽の外側への薬液雰囲気の漏洩を改善できる。 According to such an aspect, even if the cleaning member is a long member longer than the radius of the wafer, the distance from the center of the cleaning member to the swing axis is defined to be smaller than the diameter of the wafer. Since the cleaning member is moved from the repellent position to the cleaning position by swinging around the swing axis, the cleaning member is moved from the cleaning position to the cleaning position as compared with the case where the cleaning member is linearly moved (running) from the retreat position to the cleaning position. The space required to move to the shelter position (the space through which the cleaning member passes) can be reduced. Further, since the swing axis is located inside the cleaning tank, it is not necessary to form a traveling opening on the side wall of the cleaning tank. Therefore, in a cleaning device in which the cleaning member can be moved from the retracted position to the cleaning position, the footprint of the cleaning tank can be reduced without forming a running opening on the side wall of the cleaning tank. Further, since it is not necessary to form a running opening on the side wall of the cleaning tank, it is possible to improve the leakage of the chemical atmosphere to the outside of the cleaning tank.

本発明の第2の態様に係る洗浄装置は、第1の態様に係る洗浄装置であって、
前記揺動軸線は、前記洗浄部材の前記中心軸線の延長線上から離れた位置にある。
The cleaning device according to the second aspect of the present invention is the cleaning device according to the first aspect.
The rocking axis is located away from the extension of the central axis of the cleaning member.

このような態様によれば、揺動軸線が洗浄部材の中心軸線の延長線上にはないため、洗浄部材の中心から揺動軸線までの距離を、洗浄部材の長さの半分以下に縮めることも可能であり、洗浄部材を洗浄位置から待避位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を一層低減でき、洗浄槽のフットプリントをより小さくできる。 According to such an embodiment, since the swing axis is not on the extension of the central axis of the cleaning member, the distance from the center of the cleaning member to the swing axis can be reduced to less than half the length of the cleaning member. This is possible, the space required to move the cleaning member from the cleaning position to the shelter position (the space through which the cleaning member passes) can be further reduced, and the footprint of the cleaning tank can be made smaller.

本発明の第3の態様に係る洗浄装置は、第1または2の態様に係る洗浄装置であって、
前記揺動機構が前記洗浄部材を前記待避位置から前記洗浄位置まで移動させる際の揺動角は90°より小さい。
The cleaning device according to the third aspect of the present invention is the cleaning device according to the first or second aspect.
The swing angle when the swing mechanism moves the cleaning member from the retracted position to the cleaning position is smaller than 90 °.

このような態様によれば、揺動機構が洗浄部材を待避位置から洗浄位置まで移動させる際の揺動角は90°以上である場合に比べて、洗浄部材を洗浄位置から待避地位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を一層低減でき、洗浄槽のフットプリントをより小さくできる。 According to such an aspect, the cleaning member is moved from the cleaning position to the shelter position as compared with the case where the shaking angle when the rocking mechanism moves the cleaning member from the retreat position to the cleaning position is 90 ° or more. The space required for cleaning (the space through which the cleaning member passes) can be further reduced, and the footprint of the cleaning tank can be made smaller.

本発明の第4の態様に係る洗浄装置は、第1〜3のいずれかの態様に係る洗浄装置であって、
前記洗浄部材を昇降させる昇降機構と、
前記ウェハの表面に対して前記洗浄部材が加える荷重をコントロールする荷重コントロール機構と、
をさらに備える。
The cleaning device according to the fourth aspect of the present invention is the cleaning device according to any one of the first to third aspects.
An elevating mechanism that elevates and elevates the cleaning member,
A load control mechanism that controls the load applied by the cleaning member to the surface of the wafer,
Further prepare.

本発明の第5の態様に係る洗浄装置は、第4の態様に係る洗浄装置であって、
前記昇降機構は、
前記洗浄槽の壁面を貫通するように設けられた縦方向に延びる柱部と、
前記柱部から横方向に延びる腕部と、
前記洗浄槽の外側に突き出る前記柱部の端部に設けられた駆動手段と、
を有し、
前記揺動機構は、前記腕部の先端部に設けられており、
前記昇降機構は、前記洗浄部材と前記揺動機構とを一体に昇降させる。
The cleaning device according to the fifth aspect of the present invention is the cleaning device according to the fourth aspect.
The elevating mechanism
A pillar portion extending in the vertical direction provided so as to penetrate the wall surface of the washing tank, and
An arm extending laterally from the pillar and
A driving means provided at the end of the pillar portion protruding to the outside of the cleaning tank, and
Have,
The swing mechanism is provided at the tip of the arm.
The elevating mechanism integrally elevates and elevates the cleaning member and the swing mechanism.

本発明の第6の態様に係る洗浄装置は、第5の態様に係る洗浄装置であって、
前記腕部は、前記待避位置の上方または下方を跨ぐように横方向に延びている。
The cleaning device according to the sixth aspect of the present invention is the cleaning device according to the fifth aspect.
The arm extends laterally so as to straddle the upper or lower part of the retreat position.

このような態様によれば、洗浄部材が待避位置に位置するとき、腕部の下方または上方の空間に洗浄部材が収容された状態になるため、洗浄槽の内部空間の効率的な利用となり、洗浄槽のフットプリントをより小さくすることが可能となる。 According to such an aspect, when the cleaning member is located in the shelter position, the cleaning member is housed in the space below or above the arm, so that the internal space of the cleaning tank can be used efficiently. It is possible to make the footprint of the washing tank smaller.

本発明の第7の態様に係る研磨装置は、
ウェハの研磨を行う研磨ユニットと、
研磨後のウェハの洗浄を行う洗浄ユニットと、
を備え、
前記洗浄ユニットは、
ウェハの洗浄を行う洗浄空間を画定する洗浄槽と、
前記洗浄槽の内側に配置され、前記ウェハを保持して回転させるウェハ回転機構と、
前記ウェハの表面に接触して洗浄する洗浄部材であって、横方向に延びる中心軸線回りに回転可能な洗浄部材と、
前記洗浄部材を、前記洗浄槽の内側に位置する揺動軸線回りに揺動させて、前記ウェハの外側の待避位置から前記ウェハの直上の洗浄位置まで移動させる揺動機構と、
を備え、
前記洗浄部材の長さは、前記ウェハの半径よりも長く、
前記洗浄部材の中心から前記揺動軸線までの距離は、前記ウェハの直径より小さく、
前記揺動機構が前記洗浄部材を前記揺動軸線回りに揺動させる際に、前記洗浄部材は前記ウェハの中心の直上を通過する。
The polishing apparatus according to the seventh aspect of the present invention is
A polishing unit that polishes wafers and
A cleaning unit that cleans the wafer after polishing, and
With
The cleaning unit is
A cleaning tank that defines a cleaning space for cleaning wafers,
A wafer rotation mechanism that is arranged inside the washing tank and holds and rotates the wafer,
A cleaning member that comes into contact with the surface of the wafer to clean the wafer, and is a cleaning member that can rotate around the central axis extending in the lateral direction.
An oscillating mechanism that oscillates the cleaning member around an oscillating axis located inside the cleaning tank to move the cleaning member from a shelter position on the outside of the wafer to a cleaning position directly above the wafer.
With
The length of the cleaning member is longer than the radius of the wafer.
The distance from the center of the cleaning member to the swing axis is smaller than the diameter of the wafer.
When the swing mechanism swings the cleaning member around the swing axis, the cleaning member passes directly above the center of the wafer.

このような態様によれば、洗浄部材がウェハの半径より長い長尺な部材であっても、洗浄部材の中心から揺動軸線までの距離がウェハの直径より小さくなるように規定されており、洗浄部材を当該揺動軸線回りに揺動させることで待避位置から洗浄位置まで移動させるため、洗浄部材を待避位置から洗浄位置まで直線移動(走行)させる場合に比べて、洗浄部材を洗浄位置から待避位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を低減できる。また、揺動軸線が洗浄槽の内側に位置するため、洗浄槽の側壁に走行用の開口を形成する必要がない。したがって、洗浄部材を退避位置から洗浄位置まで移動可能な洗浄モジュールを備えた研磨装置において、洗浄槽の側壁に走行用の開口を形成することなく、洗浄槽のフットプリントを小さくすることが可能となる。また、洗浄槽の側壁に走行用の開口を形成する必要がないため、洗浄槽の外側への薬液雰囲気の漏洩を改善できる。 According to such an aspect, even if the cleaning member is a long member longer than the radius of the wafer, the distance from the center of the cleaning member to the swing axis is defined to be smaller than the diameter of the wafer. Since the cleaning member is moved from the repellent position to the cleaning position by swinging around the swing axis, the cleaning member is moved from the cleaning position to the cleaning position as compared with the case where the cleaning member is linearly moved (running) from the retreat position to the cleaning position. The space required to move to the shelter position (the space through which the cleaning member passes) can be reduced. Further, since the swing axis is located inside the cleaning tank, it is not necessary to form a traveling opening on the side wall of the cleaning tank. Therefore, in a polishing device equipped with a cleaning module capable of moving the cleaning member from the retracted position to the cleaning position, it is possible to reduce the footprint of the cleaning tank without forming a running opening on the side wall of the cleaning tank. Become. Further, since it is not necessary to form a running opening on the side wall of the cleaning tank, it is possible to improve the leakage of the chemical atmosphere to the outside of the cleaning tank.

本発明の第8の態様に係る研磨装置は、第7の態様に係る研磨装置であって、
前記揺動軸線は、前記洗浄部材の前記中心軸線の延長線上から離れた位置にある。
The polishing apparatus according to the eighth aspect of the present invention is the polishing apparatus according to the seventh aspect.
The rocking axis is located away from the extension of the central axis of the cleaning member.

このような態様によれば、揺動軸線が洗浄部材の中心軸線の延長線上にはないため、洗浄部材の中心から揺動軸線までの距離を、洗浄部材の長さの半分以下に縮めることも可能であり、洗浄部材を洗浄位置から待避地位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を一層低減でき、洗浄槽のフットプリントをより小さくできる。 According to such an embodiment, since the swing axis is not on the extension of the central axis of the cleaning member, the distance from the center of the cleaning member to the swing axis can be reduced to less than half the length of the cleaning member. This is possible, the space required to move the cleaning member from the cleaning position to the shelter position (the space through which the cleaning member passes) can be further reduced, and the footprint of the cleaning tank can be made smaller.

本発明の第9の態様に係る研磨装置は、第7または8の態様に係る研磨装置であって、
前記揺動機構が前記洗浄部材を前記待避位置から前記洗浄位置まで移動させる際の揺動角は90°より小さい。
The polishing apparatus according to the ninth aspect of the present invention is the polishing apparatus according to the seventh or eighth aspect.
The swing angle when the swing mechanism moves the cleaning member from the retracted position to the cleaning position is smaller than 90 °.

このような態様によれば、揺動機構が洗浄部材を待避位置から洗浄位置まで移動させる際の揺動角は90°以上である場合に比べて、洗浄部材を洗浄位置から待避地位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を一層低減でき、洗浄槽のフットプリントをより小さくできる。 According to such an aspect, the cleaning member is moved from the cleaning position to the shelter position as compared with the case where the rocking angle when the rocking mechanism moves the cleaning member from the retreat position to the cleaning position is 90 ° or more. The space required for cleaning (the space through which the cleaning member passes) can be further reduced, and the footprint of the cleaning tank can be made smaller.

本発明の第10の態様に係る研磨装置は、第7〜9のいずれかの態様に係る研磨装置であって、
前記洗浄部材を昇降させる昇降機構と、
前記ウェハの表面に対して前記洗浄部材が加える荷重をコントロールする荷重コントロール機構と、
をさらに備える。
The polishing apparatus according to the tenth aspect of the present invention is the polishing apparatus according to any one of the seventh to ninth aspects.
An elevating mechanism that elevates and elevates the cleaning member,
A load control mechanism that controls the load applied by the cleaning member to the surface of the wafer,
Further prepare.

本発明の第11の態様に係る研磨装置は、第10の態様に係る研磨装置であって、
前記昇降機構は、
前記洗浄槽の壁面を貫通するように設けられた縦方向に延びる柱部と、
前記柱部から横方向に延びる腕部と、
前記筐体の外側に突き出る前記柱部の端部に設けられた駆動手段と、
を有し、
前記揺動機構は、前記腕部の先端部に設けられており、
前記昇降機構は、前記洗浄部材と前記揺動機構とを一体に昇降させる。
The polishing apparatus according to the eleventh aspect of the present invention is the polishing apparatus according to the tenth aspect.
The elevating mechanism
A pillar portion extending in the vertical direction provided so as to penetrate the wall surface of the washing tank, and
An arm extending laterally from the pillar and
A drive means provided at the end of the pillar portion protruding to the outside of the housing, and
Have,
The swing mechanism is provided at the tip of the arm.
The elevating mechanism integrally elevates and elevates the cleaning member and the swing mechanism.

本発明の第12の態様に係る研磨装置は、第11の態様に係る研磨装置であって、
前記腕部は、前記待避位置の上方または下方を跨ぐように横方向に延びている。
The polishing apparatus according to the twelfth aspect of the present invention is the polishing apparatus according to the eleventh aspect.
The arm extends laterally so as to straddle the upper or lower part of the retreat position.

このような態様によれば、洗浄部材が待避位置に位置するとき、腕部の下方または上方の空間に洗浄部材が収容された状態になるため、洗浄槽の内部空間の効率的な利用となり、洗浄槽のフットプリントをより小さくすることが可能となる。 According to such an aspect, when the cleaning member is located in the shelter position, the cleaning member is housed in the space below or above the arm, so that the internal space of the cleaning tank can be used efficiently. It is possible to make the footprint of the washing tank smaller.

本発明によれば、洗浄部材を退避位置から洗浄位置まで移動可能な洗浄装置、研磨装置において、洗浄槽の側壁に走行用の開口を形成することなく、洗浄槽のフットプリントを小さくできる。 According to the present invention, in a cleaning device and a polishing device capable of moving a cleaning member from a retracted position to a cleaning position, the footprint of the cleaning tank can be reduced without forming a running opening on the side wall of the cleaning tank.

図1は、一実施の形態に係る研磨装置の全体構成を示す平面図である。FIG. 1 is a plan view showing the overall configuration of the polishing apparatus according to the embodiment. 図2は、一実施の形態に係る洗浄装置の洗浄槽を透過して示す斜視図であって、洗浄部材が待避位置に位置する状態を示す図である。FIG. 2 is a perspective view showing the cleaning tank of the cleaning device according to the embodiment through the cleaning tank, and is a diagram showing a state in which the cleaning member is located at a shelter position. 図3は、図2に示す洗浄装置を上方から見たときの内部平面図である。FIG. 3 is an internal plan view of the cleaning device shown in FIG. 2 when viewed from above. 図4は、図2に示す洗浄装置を奥側から見たときの内部斜視図である。FIG. 4 is an internal perspective view of the cleaning device shown in FIG. 2 when viewed from the back side. 図5は、図2に示す洗浄装置を左側から見たときの内部斜視図である。FIG. 5 is an internal perspective view of the cleaning device shown in FIG. 2 when viewed from the left side. 図6は、一実施の形態に係る洗浄装置の洗浄槽を透過して示す斜視図であって、洗浄部材が洗浄位置に位置する状態を示す図である。FIG. 6 is a perspective view showing through the cleaning tank of the cleaning apparatus according to the embodiment, showing a state in which the cleaning member is located at the cleaning position. 図7は、図6に示す洗浄装置を上方から見たときの内部平面図である。FIG. 7 is an internal plan view of the cleaning device shown in FIG. 6 when viewed from above. 図8は、一実施の形態に係る洗浄装置の洗浄槽を透過して示す斜視図であって、洗浄部材を洗浄位置から待避位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を説明するための図である。FIG. 8 is a perspective view showing through the cleaning tank of the cleaning apparatus according to the embodiment, and is a space required for moving the cleaning member from the cleaning position to the shelter position (space through which the cleaning member passes). It is a figure for demonstrating. 図9は、図8に示す洗浄装置を上方から見たときの内部平面図である。FIG. 9 is an internal plan view of the cleaning device shown in FIG. 8 when viewed from above. 図10は、一実施の形態に係る洗浄装置の洗浄槽を透過して示す斜視図であって、第2洗浄手段が洗浄位置に位置する状態を示す図である。FIG. 10 is a perspective view showing through the cleaning tank of the cleaning apparatus according to the embodiment, showing a state in which the second cleaning means is located at the cleaning position. 図11は、図10に示す洗浄装置を上方から見たときの内部平面図である。FIG. 11 is an internal plan view of the cleaning device shown in FIG. 10 when viewed from above.

以下に、添付の図面を参照して、本発明の実施の形態を詳細に説明する。なお、以下の説明および以下の説明で用いる図面では、同一に構成され得る部分について、同一の符号を用いるとともに、重複する説明を省略する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description and the drawings used in the following description, the same reference numerals are used for parts that can be configured in the same manner, and duplicate description is omitted.

<基板処理装置>
図1は、一実施の形態に係る基板処理装置(研磨装置ともいう)1の全体構成を示す平面図である。
<Board processing equipment>
FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus (also referred to as a polishing apparatus) 1 according to an embodiment.

図1に示すように、基板処理装置1は、略矩形状のハウジング10と、複数のウェハW(図2等参照)をストックする基板カセット(図示せず)が載置されるロードポート12と、を有している。ロードポート12は、ハウジング10に隣接して配置されている。ロードポート12には、オープンカセット、SMIF(Standard Manufacturing Interface)ポッドまたはFOUP(Front Opening Unified Pod)を搭載することができる。SMIFポッドおよびFOUPは、内部に基板カセットを収容し、隔壁で覆うことにより、外部空間とは独立した環境を保つことができる密閉容器である。ウェハWとしては、たとえば半導体ウェハなどを挙げることができる。 As shown in FIG. 1, the substrate processing apparatus 1 includes a substantially rectangular housing 10 and a load port 12 on which a substrate cassette (not shown) for stocking a plurality of wafers W (see FIG. 2 and the like) is placed. ,have. The load port 12 is arranged adjacent to the housing 10. The load port 12 can be equipped with an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Enhanced Pod). The SMIF pod and FOUP are airtight containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering it with a partition wall. Examples of the wafer W include semiconductor wafers.

ハウジング10の内部には、複数(図1に示す態様では4つ)の研磨ユニット14a〜14dと、研磨後のウェハWを洗浄する第1洗浄ユニット16aおよび第2洗浄ユニット16bと、洗浄後のウェハWを乾燥させる乾燥ユニット20とが収容されている。研磨ユニット14a〜14dは、ハウジング10の長手方向に沿って配列されており、洗浄ユニット16a、16bおよび乾燥ユニット20も、ハウジング10の長手方向に沿って配列されている。 Inside the housing 10, a plurality of polishing units 14a to 14d (four in the embodiment shown in FIG. 1), a first cleaning unit 16a and a second cleaning unit 16b for cleaning the polished wafer W, and after cleaning A drying unit 20 for drying the wafer W is housed. The polishing units 14a to 14d are arranged along the longitudinal direction of the housing 10, and the cleaning units 16a and 16b and the drying unit 20 are also arranged along the longitudinal direction of the housing 10.

ロードポート12と、ロードポート12側に位置する研磨ユニット14aと、乾燥ユニット20とにより囲まれた領域には、第1搬送ロボット22が配置されている。また、研磨ユニット14a〜14dが配列された領域と、洗浄ユニット16a、16bおよび乾燥ユニット20が配列された領域との間には、ハウジング10の長手方向と平行に、搬送ユニット24が配置されている。第1搬送ロボット22は、研磨前のウェハWをロードポート12から受け取って搬送ユニット24に受け渡したり、乾燥ユニット20から取り出された乾燥後のウェハWを搬送ユニット24から受け取ったりする。 The first transfer robot 22 is arranged in the area surrounded by the load port 12, the polishing unit 14a located on the load port 12 side, and the drying unit 20. Further, a transport unit 24 is arranged in parallel with the longitudinal direction of the housing 10 between the region where the polishing units 14a to 14d are arranged and the region where the cleaning units 16a and 16b and the drying unit 20 are arranged. There is. The first transfer robot 22 receives the wafer W before polishing from the load port 12 and delivers it to the transfer unit 24, or receives the dried wafer W taken out from the drying unit 20 from the transfer unit 24.

第1洗浄ユニット16aと第2洗浄ユニット16bとの間には、第1洗浄ユニット16aと第2洗浄ユニット16bとの間でウェハWの受け渡しを行う第2搬送ロボット26が配置されている。また、第2洗浄ユニット16bと乾燥ユニット20との間には、第2洗浄ユニット16bと乾燥ユニット20との間でウェハWの受け渡しを行う第3搬送ロボット28が配置されている。 Between the first cleaning unit 16a and the second cleaning unit 16b, a second transfer robot 26 that transfers the wafer W between the first cleaning unit 16a and the second cleaning unit 16b is arranged. Further, between the second cleaning unit 16b and the drying unit 20, a third transfer robot 28 that transfers the wafer W between the second cleaning unit 16b and the drying unit 20 is arranged.

さらに、基板処理装置1には、各機器14a〜14d、16a、16b、22、24、26、28の動きを制御する制御装置30が設けられている。制御装置30としては、たとえば、プログラマブル・ロジック・コントローラ(PLC)が用いられる。図1に示す態様では、制御装置30がハウジング10の内部に配置されているが、これに限られることはなく、制御装置30がハウジング10の外部に配置されていてもよい。 Further, the substrate processing device 1 is provided with a control device 30 for controlling the movements of the devices 14a to 14d, 16a, 16b, 22, 24, 26, and 28. As the control device 30, for example, a programmable logic controller (PLC) is used. In the embodiment shown in FIG. 1, the control device 30 is arranged inside the housing 10, but the present invention is not limited to this, and the control device 30 may be arranged outside the housing 10.

第1洗浄ユニット16aおよび/または第2洗浄ユニット16bとしては、洗浄液の存在下で、水平方向に延びるロール洗浄部材をウェハWの表面に接触させ、ロール洗浄部材を自転させながらウェハWの表面をスクラブ洗浄するロール洗浄装置(後述する一実施形態に係る洗浄装置16)が用いられてもよいし、洗浄液の存在下で、鉛直方向に延びる円柱状のペンシル洗浄部材をウェハWの表面に接触させ、ペンシル洗浄部材を自転させながらウェハWの表面と平行な一方向に向けて移動させて、ウェハWの表面をスクラブ洗浄するペンシル洗浄装置(不図示)が用いられてもよいし、洗浄液の存在下で、鉛直方向に延びる回転軸線を有するバフ洗浄研磨部材をウェハWの表面に接触させ、バフ洗浄研磨部材を自転させながらウェハWの表面と平行な一方向に向けて移動させて、ウェハWの表面をスクラブ洗浄研磨するバフ洗浄研磨装置(不図示)が用いられてもよいし、二流体ジェットによりウェハWの表面を洗浄する二流体ジェット洗浄装置(不図示)が用いられてもよい。また、第1洗浄ユニット16aおよび/または第2洗浄ユニット16bとしては、これらロール洗浄装置、ペンシル洗浄装置、バフ洗浄研磨装置および二流体ジェット洗浄装置のいずれか2つ以上が組み合わされて用いられてもよい。 As the first cleaning unit 16a and / or the second cleaning unit 16b, in the presence of the cleaning liquid, a roll cleaning member extending in the horizontally direction is brought into contact with the surface of the wafer W, and the surface of the wafer W is rotated while the roll cleaning member is rotated. A roll cleaning device for scrubbing (cleaning device 16 according to one embodiment described later) may be used, or a columnar pencil cleaning member extending in the vertical direction is brought into contact with the surface of the wafer W in the presence of a cleaning liquid. , A pencil cleaning device (not shown) that scrubs the surface of the wafer W by moving the pencil cleaning member in one direction parallel to the surface of the wafer W while rotating may be used, or the presence of a cleaning liquid. Below, a buff cleaning and polishing member having a rotation axis extending in the vertical direction is brought into contact with the surface of the wafer W, and the buff cleaning and polishing member is rotated and moved in one direction parallel to the surface of the wafer W to move the wafer W. A buff cleaning and polishing device (not shown) that scrubs and polishes the surface of the wafer W may be used, or a two-fluid jet cleaning device (not shown) that cleans the surface of the wafer W with a two-fluid jet may be used. Further, as the first cleaning unit 16a and / or the second cleaning unit 16b, any two or more of the roll cleaning device, the pencil cleaning device, the buff cleaning and polishing device, and the two-fluid jet cleaning device are used in combination. May be good.

洗浄液には、純水(DIW)などのリンス液と、アンモニア過酸化水素(SC1)、塩酸過酸化水素(SC2)、硫酸過酸化水素(SPM)、硫酸加水、フッ酸などの薬液とが含まれる。本実施の形態で特に断りのない限り、洗浄液は、リンス液または薬液のいずれかを意味している。 The cleaning solution includes a rinse solution such as pure water (DIW) and a chemical solution such as hydrogen peroxide (SC1), hydrogen peroxide (SC2), hydrogen peroxide (SPM), sulfuric acid, and hydrofluoric acid. Is done. Unless otherwise specified in the present embodiment, the cleaning solution means either a rinsing solution or a chemical solution.

乾燥ユニット20としては、回転するウェハWに向けて、ウェハWの表面と平行な一方向に移動する噴射ノズルからイソプロピルアルコール(IPA)蒸気を噴出してウェハWを乾燥させ、さらにウェハWを高速で回転させて遠心力によってウェハWを乾燥させるスピン乾燥装置が用いられてもよい。 The drying unit 20 ejects isopropyl alcohol (IPA) steam from an injection nozzle that moves in one direction parallel to the surface of the wafer W toward the rotating wafer W to dry the wafer W, and further causes the wafer W to have a high speed. A spin drying device may be used in which the wafer W is dried by centrifugal force by rotating the wafer W.

<洗浄装置>
次に、一実施の形態に係る洗浄装置16について説明する。図2は、洗浄装置16の洗浄槽41を透過して示す斜視図であって、洗浄部材43が待避位置に位置する状態を示す図である。図3は、図2に示す洗浄装置16を上方から見たときの内部平面図である。図4は、図2に示す洗浄装置16を奥側から見たときの内部斜視図である。図5は、図2に示す洗浄装置16を左側から見たときの内部斜視図である。
<Washing device>
Next, the cleaning device 16 according to the embodiment will be described. FIG. 2 is a perspective view showing through the cleaning tank 41 of the cleaning device 16, and is a diagram showing a state in which the cleaning member 43 is located at a retreat position. FIG. 3 is an internal plan view of the cleaning device 16 shown in FIG. 2 when viewed from above. FIG. 4 is an internal perspective view of the cleaning device 16 shown in FIG. 2 when viewed from the back side. FIG. 5 is an internal perspective view of the cleaning device 16 shown in FIG. 2 when viewed from the left side.

本実施の形態に係る洗浄装置16は、上述した基板処理装置1における第1洗浄ユニット16aおよび/または第2洗浄ユニット16bとして用いられ得る。 The cleaning device 16 according to the present embodiment can be used as the first cleaning unit 16a and / or the second cleaning unit 16b in the substrate processing device 1 described above.

図2〜図5に示すように、洗浄装置16は、ウェハWの洗浄を行う洗浄空間を画定する洗浄槽41と、洗浄槽41の内側に配置され、ウェハWを保持して回転させるウェハ回転機構42と、ウェハWの表面に接触して洗浄する洗浄部材43であって、横方向に延びる中心軸線回りに回転可能な洗浄部材43と、洗浄部材43を、洗浄槽41の内側に位置する揺動軸線回りに揺動させて、ウェハWの外側の待避位置からウェハWの直上の洗浄位置まで移動させる揺動機構44と、洗浄部材43を昇降させる昇降機構45と、ウェハWに洗浄液を供給する液供給ノズル46a、46bと、を有している。 As shown in FIGS. 2 to 5, the cleaning apparatus 16 has a cleaning tank 41 that defines a cleaning space for cleaning the wafer W, and a wafer rotation that is arranged inside the cleaning tank 41 to hold and rotate the wafer W. The cleaning member 43, which is a cleaning member 43 that contacts and cleans the surface of the wafer W and is rotatable around the central axis extending in the lateral direction, and the cleaning member 43 are located inside the cleaning tank 41. A swing mechanism 44 that swings around the swing axis to move from a retreat position on the outside of the wafer W to a cleaning position directly above the wafer W, an elevating mechanism 45 that raises and lowers the cleaning member 43, and a cleaning liquid on the wafer W. It has liquid supply nozzles 46a and 46b to be supplied.

このうち洗浄槽41は、略直方体形状を有している。図示された例では、洗浄槽41の内側にウェハWを搬入または搬出するためのウェハ搬入出口41a、41bが、洗浄槽41の左右の側壁面にそれぞれ形成されており、ウェハ搬入出口41a、41bはそれぞれシャッタ50a、50bにより開閉可能となっている。 Of these, the cleaning tank 41 has a substantially rectangular parallelepiped shape. In the illustrated example, wafer loading ports 41a and 41b for loading and unloading the wafer W inside the cleaning tank 41 are formed on the left and right side wall surfaces of the cleaning tank 41, respectively, and the wafer loading ports 41a and 41b are formed. Can be opened and closed by the shutters 50a and 50b, respectively.

洗浄槽41の内側には、洗浄槽41の奥側の側壁面に隣接して、左右方向に延びるクリーニング手段51が配置されている。クリーニング手段51は、洗浄部材43が押し付けられるクリーニング面を有している。クリーニング面は、たとえば石英等によって平面状に形成されている。なお、クリーニング面の材質および形状は、洗浄部材43の材質および形状などに応じて、適宜変更されてもよい。たとえば、クリーニング面の材質としてポリ塩化ビニル(PVC)が採用されてもよい。 Inside the cleaning tank 41, a cleaning means 51 extending in the left-right direction is arranged adjacent to the side wall surface on the inner side of the cleaning tank 41. The cleaning means 51 has a cleaning surface on which the cleaning member 43 is pressed. The cleaning surface is formed in a flat shape by, for example, quartz. The material and shape of the cleaning surface may be appropriately changed depending on the material and shape of the cleaning member 43 and the like. For example, polyvinyl chloride (PVC) may be used as the material for the cleaning surface.

クリーニング面上には、図示しない薬液管、純水管などが配置されている。薬液管から噴射される薬液は、液供給ノズル46a、46bからウェハWに供給される薬液と同じものであってもよい。洗浄部材43が待避位置に配置された状態で、洗浄部材43が回転(自転)されつつクリーニング手段51に押し付けられ、薬液が洗浄部材43に向けて噴射されることで、洗浄部材43に付着した汚れが落とされる。このように、洗浄部材43がクリーニング手段51に押し付けられた状態で所定量回転(自転)された後、洗浄部材43が上昇されてクリーニング手段51から離間され、次いで、純水がクリーニング手段51および洗浄部材43に向けて噴射されることで、クリーニング手段51および洗浄部材43の汚れが落とされる。 A chemical solution pipe, a pure water pipe, etc. (not shown) are arranged on the cleaning surface. The chemical solution ejected from the chemical solution pipe may be the same as the chemical solution supplied to the wafer W from the liquid supply nozzles 46a and 46b. With the cleaning member 43 arranged in the retreat position, the cleaning member 43 is pressed against the cleaning means 51 while rotating (rotating), and the chemical solution is sprayed toward the cleaning member 43 to adhere to the cleaning member 43. Dirt is removed. In this way, after the cleaning member 43 is rotated (rotated) by a predetermined amount while being pressed against the cleaning means 51, the cleaning member 43 is raised and separated from the cleaning means 51, and then pure water is applied to the cleaning means 51 and By spraying toward the cleaning member 43, the cleaning means 51 and the cleaning member 43 are cleaned.

本実施の形態では、ウェハ回転機構42は、ウェハWの周縁部を保持する複数(図示された例では4つ)のローラ42a〜42dを有している。複数のローラ42a〜42が不図示の回転駆動部(たとえばモータ)から受ける回転駆動力によりそれぞれ同一方向に回転(自転)されることにより、複数のローラ42a〜42dに保持されたウェハWは、各ローラ42a〜42dとウェハWの周縁部との間にはたらく摩擦力により、各ローラ42a〜42dの回転方向とは逆向きに回転される。 In the present embodiment, the wafer rotation mechanism 42 has a plurality of (four in the illustrated example) rollers 42a to 42d that hold the peripheral edge portion of the wafer W. The wafers W held by the plurality of rollers 42a to 42d are formed by rotating (rotating) the plurality of rollers 42a to 42 in the same direction by the rotational driving force received from a rotational driving unit (for example, a motor) (not shown). Due to the frictional force acting between the rollers 42a to 42d and the peripheral edge of the wafer W, the rollers 42a to 42d are rotated in the direction opposite to the rotation direction.

洗浄部材43としては、横方向に延びる円柱状のロールスポンジを用いることができる。ロールスポンジの材質としては、多孔質のポリビニルアルコール(PVA)製スポンジ、発泡ウレタンスポンジなどを用いることができる。洗浄部材43の軸線方向の長さは、ウェハWの半径よりも長くなっている。洗浄部材43の軸線方向の長さは、ウェハWの直径よりも長くなっていてもよい。洗浄部材43がウェハWの直上の洗浄位置に配置された状態で、液供給ノズル46a、46bから薬液および/または純水が回転されるウェハWの表面に向けて噴射され、洗浄部材43の周面がウェハWの表面に接触された状態で洗浄部材43が回転(自転)されることで、ウェハWの表面が洗浄される。 As the cleaning member 43, a columnar roll sponge extending in the lateral direction can be used. As the material of the roll sponge, a porous polyvinyl alcohol (PVA) sponge, urethane foam sponge, or the like can be used. The axial length of the cleaning member 43 is longer than the radius of the wafer W. The axial length of the cleaning member 43 may be longer than the diameter of the wafer W. With the cleaning member 43 arranged at the cleaning position directly above the wafer W, the chemical liquid and / or pure water is ejected from the liquid supply nozzles 46a and 46b toward the surface of the wafer W to be rotated, and the circumference of the cleaning member 43 The surface of the wafer W is cleaned by rotating (rotating) the cleaning member 43 with the surface in contact with the surface of the wafer W.

図示された例では、洗浄部材43の軸線方向と平行に延びるホルダ431が、洗浄部材43の上方に配置されている。ホルダ431は、洗浄部材43の両端部をその中心軸線回りに回転(自転)可能に保持している。ホルダ431の内部には、洗浄部材43をその中心軸線回りに回転(自転)させるモータ(不図示)が設けられている。また、ホルダ431の内部には、ウェハWの表面に対して洗浄部材43が加える荷重を計測するロードセル(不図示)が設けられていてもよい。ロードセルには、荷重コントロール機構(不図示)が接続されている。荷重コントロール機構は、ロードセルの計測結果に基づいて、昇降機構45の動作を制御することで、ウェハWの表面に対して洗浄部材43が加える荷重をコントロールする。荷重コントロール機構は、制御装置30(図1参照)に設けられていてもよい。 In the illustrated example, the holder 431 extending parallel to the axial direction of the cleaning member 43 is arranged above the cleaning member 43. The holder 431 holds both ends of the cleaning member 43 so as to be rotatable (rotating) around its central axis. Inside the holder 431, a motor (not shown) for rotating (rotating) the cleaning member 43 around its central axis is provided. Further, a load cell (not shown) for measuring the load applied by the cleaning member 43 to the surface of the wafer W may be provided inside the holder 431. A load control mechanism (not shown) is connected to the load cell. The load control mechanism controls the operation of the elevating mechanism 45 based on the measurement result of the load cell to control the load applied by the cleaning member 43 to the surface of the wafer W. The load control mechanism may be provided in the control device 30 (see FIG. 1).

本実施の形態では、昇降機構45は、洗浄槽41の壁面を貫通するように設けられた縦方向に延びる柱部45aと、柱部45aの一端部から横方向に延びる腕部45bと、洗浄槽41の外側に突き出る柱部45aの他端部に設けられた駆動手段45cと、を有している。駆動手段45cは、たとえばモータである。 In the present embodiment, the elevating mechanism 45 has a vertically extending pillar portion 45a provided so as to penetrate the wall surface of the cleaning tank 41 and an arm portion 45b extending laterally from one end of the pillar portion 45a for cleaning. It has a driving means 45c provided at the other end of the pillar portion 45a protruding to the outside of the tank 41. The drive means 45c is, for example, a motor.

図示された例では、洗浄槽41の奥側(図3における紙面上側)の側壁面のうち左端部分の上側部分には奥側に窪んだ凹部が形成されており、柱部45aは、当該凹部に配置されている。腕部45bは、待避位置の上方を跨ぐように、当該柱部45aの上端部から手前側(図3における紙面下側)に延びるように設けられている。これにより、洗浄部材43が待避位置に配置された状態では、洗浄部材43が腕部45bの下方の空間に収容された状態となるため、洗浄槽41の内部空間の効率的な利用となり、洗浄槽41のフットプリントをより小さくすることが可能となる。 In the illustrated example, a recess is formed in the upper portion of the left end portion of the side wall surface on the back side (upper side of the paper surface in FIG. 3) of the cleaning tank 41, and the pillar portion 45a is the recess. It is located in. The arm portion 45b is provided so as to extend from the upper end portion of the pillar portion 45a to the front side (lower side of the paper surface in FIG. 3) so as to straddle the upper part of the retreat position. As a result, when the cleaning member 43 is arranged in the shelter position, the cleaning member 43 is housed in the space below the arm portion 45b, so that the internal space of the cleaning tank 41 can be efficiently used for cleaning. The footprint of the tank 41 can be made smaller.

本実施の形態では、揺動機構44は、腕部45bの先端部に設けられており、揺動機構44の揺動軸線Aは、洗浄槽41の内側において、腕部45bの先端部に位置決めされている。揺動機構44は、たとえばモータである。洗浄部材43を保持するホルダ431の端部は、揺動機構44を介して、腕部45bの先端部に保持されている。 In the present embodiment, the swing mechanism 44 is provided at the tip of the arm 45b, and the swing axis A of the swing mechanism 44 is positioned at the tip of the arm 45b inside the cleaning tank 41. Has been done. The swing mechanism 44 is, for example, a motor. The end of the holder 431 that holds the cleaning member 43 is held at the tip of the arm 45b via the swing mechanism 44.

昇降機構45の柱部45aは、駆動手段45cから受ける直線駆動力により腕部45bと一体に縦方向に直線移動される。これにより、腕部45bの先端部に設けられた揺動機構44とホルダ431と洗浄部材43も、柱部45aおよび腕部45bとともに縦方向に直線移動される。図2〜図5を参照し、洗浄部材43が待避位置に配置された状態で、昇降機構45が動作されることで、洗浄部材43は、クリーニング手段51に接触する高さ位置とクリーニング手段51から離間した高さ位置との間で昇降移動される。 The pillar portion 45a of the elevating mechanism 45 is linearly moved in the vertical direction integrally with the arm portion 45b by the linear driving force received from the driving means 45c. As a result, the swing mechanism 44, the holder 431, and the cleaning member 43 provided at the tip of the arm portion 45b are also linearly moved in the vertical direction together with the pillar portion 45a and the arm portion 45b. With reference to FIGS. 2 to 5, the elevating mechanism 45 is operated with the cleaning member 43 arranged in the retreat position, so that the cleaning member 43 comes into contact with the cleaning means 51 at a height position and the cleaning means 51. It is moved up and down to and from a height position separated from.

また、洗浄部材43がクリーニング手段51から離間した高さ位置に配置された状態で、ホルダ431および洗浄部材43は、揺動機構44から受ける回転駆動力により、腕部45bの先端部に位置決めされた揺動軸線A回りに揺動(旋回)される。これにより、洗浄部材43は、ウェハWの外側の待避位置(図2〜図5参照)からウェハWの直上の洗浄位置(図6および図7参照)まで移動される。揺動機構44が洗浄部材43を揺動軸線A回りに揺動させる際に、洗浄部材43はウェハWの中心の直上を通過するように構成されていてもよい。 Further, in a state where the cleaning member 43 is arranged at a height position away from the cleaning means 51, the holder 431 and the cleaning member 43 are positioned at the tip of the arm portion 45b by the rotational driving force received from the swing mechanism 44. It is oscillated (turned) around the oscillating axis A. As a result, the cleaning member 43 is moved from the shelter position on the outside of the wafer W (see FIGS. 2 to 5) to the cleaning position directly above the wafer W (see FIGS. 6 and 7). When the swing mechanism 44 swings the cleaning member 43 around the swing axis A, the cleaning member 43 may be configured to pass directly above the center of the wafer W.

図6は、洗浄装置16の洗浄槽41を透過して示す斜視図であって、洗浄部材43が洗浄位置に位置する状態を示す図である。図7は、図6に示す洗浄装置16を上方から見たときの内部平面図である。 FIG. 6 is a perspective view showing the cleaning device 16 through the cleaning tank 41, showing a state in which the cleaning member 43 is located at the cleaning position. FIG. 7 is an internal plan view of the cleaning device 16 shown in FIG. 6 when viewed from above.

図6および図7を参照し、洗浄部材43が洗浄位置に配置された状態で、昇降機構45が動作されることで、洗浄部材43は、ウェハWの表面に接触する高さ位置とウェハWの表面から離間した高さ位置との間で昇降移動される。そして、洗浄部材43の周面がウェハWの表面に接触された状態で、液供給ノズル46a、46bから薬液および/または純水が回転されるウェハWの表面に向けて噴射されるとともに、洗浄部材43が回転(自転)されることで、ウェハWの表面が洗浄される。 With reference to FIGS. 6 and 7, the elevating mechanism 45 is operated with the cleaning member 43 arranged at the cleaning position, so that the cleaning member 43 comes into contact with the surface of the wafer W at a height position and the wafer W. It is moved up and down to and from a height position away from the surface of the. Then, with the peripheral surface of the cleaning member 43 in contact with the surface of the wafer W, the chemical solution and / or pure water is ejected from the liquid supply nozzles 46a and 46b toward the surface of the wafer W to be rotated and cleaned. The surface of the wafer W is cleaned by rotating (rotating) the member 43.

図8は、洗浄装置16の洗浄槽41を透過して示す斜視図であって、洗浄部材43を洗浄位置から待避位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を説明するための図である。図9は、図8に示す洗浄装置16を上方から見たときの内部平面図である。図8および図9において、符号C1、C2が付された円弧状の曲線は、洗浄部材43を洗浄位置から待避位置まで移動させるのに必要なスペース(すなわち、洗浄部材43(ホルダ431)が通過するスペース)の輪郭線を示している。 FIG. 8 is a perspective view showing through the cleaning tank 41 of the cleaning device 16, and describes the space (space through which the cleaning member passes) required to move the cleaning member 43 from the cleaning position to the shelter position. It is a figure for. FIG. 9 is an internal plan view of the cleaning device 16 shown in FIG. 8 when viewed from above. In FIGS. 8 and 9, the arcuate curve with the symbols C1 and C2 passes through the space required for moving the cleaning member 43 from the cleaning position to the shelter position (that is, the cleaning member 43 (holder 431) passes through. The outline of the space) is shown.

本実施の形態では、図9に示すように、洗浄部材43の中心から揺動機構44の揺動軸線Aまでの距離L(旋回半径ともいう)は、ウェハWの直径より小さくなっている。これにより、図8および図9に示すように、洗浄部材43がウェハWの半径より長い長尺なロールスポンジであっても、洗浄部材43の中心から揺動軸線Aまでの距離LがウェハWの直径より小さくなるように規定されており、洗浄部材43を当該揺動軸線A回りに揺動させることで待避位置から洗浄位置まで移動させることで、洗浄部材43を待避位置から洗浄位置まで直線移動(走行)させる場合に比べて、洗浄部材43を洗浄位置から待避位置まで移動させるのに必要なスペースを低減できるようになっている。 In the present embodiment, as shown in FIG. 9, the distance L (also referred to as the turning radius) from the center of the cleaning member 43 to the swing axis A of the swing mechanism 44 is smaller than the diameter of the wafer W. As a result, as shown in FIGS. 8 and 9, even if the cleaning member 43 is a long roll sponge longer than the radius of the wafer W, the distance L from the center of the cleaning member 43 to the swing axis A is the wafer W. The cleaning member 43 is swung around the swing axis A to move the cleaning member 43 from the retreat position to the cleaning position, thereby moving the cleaning member 43 straight from the retreat position to the cleaning position. Compared with the case of moving (running), the space required for moving the cleaning member 43 from the cleaning position to the retreat position can be reduced.

本実施の形態では、図3および図7に示すように、揺動機構44の揺動軸線Aは、洗浄部材43の中心軸線の延長線上から離れた位置にある(すなわち、揺動軸線Aは、洗浄部材43の中心軸線の延長線上にはない)。仮に揺動軸線Aが洗浄部材43の中心軸線の延長線上にある場合には、洗浄部材43の中心から揺動軸線Aまでの距離Lを、洗浄部材43の軸線方向の長さの半分以下に縮めることは不可能である(洗浄部材43の端部が揺動軸線Aにぶつかってしまう)。これに対し、本実施の形態では、揺動軸線Aが洗浄部材43の中心軸線の延長線上にはないため、洗浄部材43の中心から揺動軸線Aまでの距離Lを、洗浄部材43の軸線方向の長さの半分以下に縮めることも可能であり、これにより、洗浄部材43を洗浄位置から待避位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を一層低減できるようになっている。 In the present embodiment, as shown in FIGS. 3 and 7, the swing axis A of the swing mechanism 44 is located at a position away from the extension line of the central axis of the cleaning member 43 (that is, the swing axis A is , Not on the extension of the central axis of the cleaning member 43). If the swing axis A is on an extension of the central axis of the cleaning member 43, the distance L from the center of the cleaning member 43 to the swing axis A should be reduced to half or less of the axial length of the cleaning member 43. It is impossible to shrink (the end of the cleaning member 43 hits the swing axis A). On the other hand, in the present embodiment, since the swing axis A is not on the extension line of the central axis of the cleaning member 43, the distance L from the center of the cleaning member 43 to the swing axis A is set to the axis of the cleaning member 43. It is also possible to shrink it to less than half the length in the direction, which makes it possible to further reduce the space required to move the cleaning member 43 from the cleaning position to the shelter position (the space through which the cleaning member passes). ing.

本実施の形態では、図9に示すように、揺動機構44が洗浄部材43を待避位置から洗浄位置まで移動させる際の揺動角θは、90°より小さくなっている。これにより、洗浄部材43を待避位置から洗浄位置まで移動させる際の揺動角θが90°以上である場合に比べて、洗浄部材43を洗浄位置から待避地位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を一層低減できるようになっている。 In the present embodiment, as shown in FIG. 9, the swing angle θ when the swing mechanism 44 moves the cleaning member 43 from the retreat position to the cleaning position is smaller than 90 °. As a result, the space required to move the cleaning member 43 from the cleaning position to the shelter position is compared with the case where the swing angle θ when moving the cleaning member 43 from the cleaning position to the cleaning position is 90 ° or more. (Space through which cleaning members pass) can be further reduced.

本実施の形態では、洗浄装置16は、ウェハWの裏面に接触して洗浄する裏面洗浄部材47と、ウェハWの表面を洗浄する第2洗浄手段48と、第2洗浄手段48を、洗浄槽41の内側に位置する第2揺動軸線回りに揺動させて、ウェハWの外側の第2待避位置からウェハWの直上の第2洗浄位置まで移動させる第2揺動機構49と、をさらに有している。 In the present embodiment, the cleaning device 16 uses a cleaning tank for a back surface cleaning member 47 that contacts and cleans the back surface of the wafer W, a second cleaning means 48 that cleans the surface of the wafer W, and a second cleaning means 48. Further, a second swing mechanism 49 that swings around the second swing axis located inside the 41 and moves from the second retaining position outside the wafer W to the second cleaning position directly above the wafer W. Have.

裏面洗浄部材47としては、横方向に延びる円柱状のロールスポンジを用いることができる。ロールスポンジの材質としては、多孔質のポリビニルアルコール(PVA)製スポンジ、発泡ウレタンスポンジなどを用いることができる。裏面洗浄部材47は、ウェハWの直下に配置されている。裏面洗浄部材47の軸線方向の長さは、ウェハWの半径よりも長くなっている。裏面洗浄部材47の軸線方向の長さは、ウェハWの直径よりも長くなっていてもよい。裏面洗浄部材47の周面がウェハWの裏面に接触された状態で、不図示のノズルから薬液および/または純水が回転されるウェハWの裏面に向けて噴射されるとともに、裏面洗浄部材47が回転(自転)されることで、ウェハWの裏面が洗浄される。 As the back surface cleaning member 47, a columnar roll sponge extending in the lateral direction can be used. As the material of the roll sponge, a porous polyvinyl alcohol (PVA) sponge, urethane foam sponge, or the like can be used. The back surface cleaning member 47 is arranged directly below the wafer W. The axial length of the back surface cleaning member 47 is longer than the radius of the wafer W. The axial length of the back surface cleaning member 47 may be longer than the diameter of the wafer W. With the peripheral surface of the back surface cleaning member 47 in contact with the back surface of the wafer W, the chemical solution and / or pure water is ejected from a nozzle (not shown) toward the back surface of the wafer W to be rotated, and the back surface cleaning member 47 Is rotated (rotated) to clean the back surface of the wafer W.

図示された例では、裏面洗浄部材47の軸線方向と平行に延びるホルダ471が、裏面洗浄部材47の下方に配置されている。ホルダ471は、裏面洗浄部材47の両端部をその中心軸線回りに回転(自転)可能に保持している。ホルダ471の内部には、裏面洗浄部材47をその中心軸線回りに回転(自転)させるモータ(不図示)が設けられている。また、ホルダ471の内部には、ウェハWの表面に対して裏面洗浄部材47が加える荷重を計測するロードセル(不図示)が設けられていてもよい。ロードセルは、上述した荷重コントロール機構(不図示)に接続されている。荷重コントロール機構は、ロードセルの計測結果に基づいて、裏面洗浄部材47およびホルダ471を昇降させる手段(不図示)の動作を制御することで、ウェハWの裏面に対して裏面洗浄部材47が加える荷重をコントロールする。 In the illustrated example, the holder 471 extending parallel to the axial direction of the back surface cleaning member 47 is arranged below the back surface cleaning member 47. The holder 471 holds both ends of the back surface cleaning member 47 so as to be rotatable (rotating) around its central axis. Inside the holder 471, a motor (not shown) for rotating (rotating) the back surface cleaning member 47 around its central axis is provided. Further, a load cell (not shown) for measuring the load applied by the back surface cleaning member 47 to the front surface of the wafer W may be provided inside the holder 471. The load cell is connected to the load control mechanism (not shown) described above. The load control mechanism controls the operation of the means (not shown) for raising and lowering the back surface cleaning member 47 and the holder 471 based on the measurement result of the load cell, so that the load applied by the back surface cleaning member 47 to the back surface of the wafer W. To control.

第2洗浄手段48としては、たとえば、洗浄液の存在下で、鉛直方向に延びる円柱状のペンシル洗浄部材をウェハWの表面に接触させ、ペンシル洗浄部材を自転させながらウェハWの表面と平行な一方向に向けて移動(揺動)されることで、ウェハWの表面をスクラブ洗浄するペンシル洗浄手段が用いられてもよいし、洗浄液の存在下で、鉛直方向に延びる回転軸線を有するバフ洗浄研磨部材をウェハWの表面に接触させ、バフ洗浄研磨部材を自転させながらウェハWの表面と平行な一方向に向けて移動(揺動)されることで、ウェハWの表面をスクラブ洗浄研磨するバフ洗浄研磨手段が用いられてもよいし、二流体ジェットによりウェハWの表面を洗浄する二流体ジェット洗浄手段が用いられてもよいし、メガソニック(高周波超音波)ジェットによりウェハWの表面を洗浄するメガソニックジェット洗浄手段が用いられてもよい。 As the second cleaning means 48, for example, in the presence of a cleaning liquid, a cylindrical pencil cleaning member extending in the vertical direction is brought into contact with the surface of the wafer W, and the pencil cleaning member is rotated while being parallel to the surface of the wafer W. A pencil cleaning means for scrubbing the surface of the wafer W by being moved (oscillated) in a direction may be used, or buff cleaning and polishing having a rotation axis extending in the vertical direction in the presence of a cleaning liquid. A buff that scrubs and polishes the surface of the wafer W by bringing the member into contact with the surface of the wafer W and moving (swinging) the member in one direction parallel to the surface of the wafer W while rotating the buff cleaning and polishing member. A cleaning and polishing means may be used, a two-fluid jet cleaning means for cleaning the surface of the wafer W with a two-fluid jet may be used, or a megasonic (high-frequency ultrasonic) jet may be used to clean the surface of the wafer W. Megasonic jet cleaning means may be used.

第2揺動機構49は、洗浄槽41の壁面(図示された例では床面)を貫通するように設けられた縦方向に延びる柱部と、柱部の一端部から横方向に延びる腕部と、洗浄槽41の外側に突き出る柱部の他端部に設けられた駆動手段(不図示)と、を有している。駆動手段は、たとえばモータである。 The second swing mechanism 49 includes a pillar portion extending in the vertical direction provided so as to penetrate the wall surface (floor surface in the illustrated example) of the cleaning tank 41, and an arm portion extending in the horizontal direction from one end of the pillar portion. And a driving means (not shown) provided at the other end of the pillar portion protruding to the outside of the cleaning tank 41. The driving means is, for example, a motor.

第2揺動機構49の柱部は、ウェハWの中心から見て、揺動機構44とは逆側に配置されており、第2揺動機構49の揺動軸線(第2揺動軸線)は、ウェハWの中心から見て、揺動機構44の揺動軸線Aとは逆側に位置決めされている。第2洗浄手段48は、第2揺動機構49の腕部の先端部に支持されており、第2揺動機構49から受ける回転駆動力により、第2揺動軸線回りに揺動(旋回)される。 The pillar portion of the second swing mechanism 49 is arranged on the opposite side of the swing mechanism 44 when viewed from the center of the wafer W, and is the swing axis of the second swing mechanism 49 (second swing axis). Is positioned on the side opposite to the swing axis A of the swing mechanism 44 when viewed from the center of the wafer W. The second cleaning means 48 is supported by the tip of the arm of the second swing mechanism 49, and swings (turns) around the second swing axis by the rotational driving force received from the second swing mechanism 49. Will be done.

図10は、洗浄装置16の洗浄槽41を透過して示す斜視図であって、第2洗浄手段48が洗浄位置に位置する状態を示す図である。図11は、図10に示す洗浄装置16を上方から見たときの内部平面図である。 FIG. 10 is a perspective view showing through the cleaning tank 41 of the cleaning device 16 and shows a state in which the second cleaning means 48 is located at the cleaning position. FIG. 11 is an internal plan view of the cleaning device 16 shown in FIG. 10 when viewed from above.

次に、このような構成からなる洗浄装置16の動作について説明する。 Next, the operation of the cleaning device 16 having such a configuration will be described.

まず、図2〜図5を参照し、洗浄部材43が、ウェハWの外側の待避位置に配置された状態で、シャッタ50aが開状態となり、洗浄対象のウェハW(たとえば研磨処理後のウェハW)が、ウェハ搬入出口41aを通って洗浄槽41の内側に搬入される。ウェハWは、ウェハ回転機構42に保持されて回転される。 First, with reference to FIGS. 2 to 5, the shutter 50a is opened in a state where the cleaning member 43 is arranged at a retreat position outside the wafer W, and the wafer W to be cleaned (for example, the wafer W after polishing treatment). ) Is carried into the inside of the cleaning tank 41 through the wafer carry-in outlet 41a. The wafer W is held by the wafer rotation mechanism 42 and rotated.

次に、洗浄部材43がクリーニング手段51から離間された状態で、図8および図9に示すように、揺動機構44が、洗浄部材43を揺動軸線A回りに揺動(旋回)させて、待避位置からウェハWの直上の洗浄位置まで移動させる。揺動機構44が洗浄部材43を揺動軸線A回りに揺動させる際に、洗浄部材43はウェハWの中心の直上を通過する。 Next, with the cleaning member 43 separated from the cleaning means 51, as shown in FIGS. 8 and 9, the swing mechanism 44 swings (turns) the cleaning member 43 around the swing axis A. , Move from the retreat position to the cleaning position directly above the wafer W. When the swing mechanism 44 swings the cleaning member 43 around the swing axis A, the cleaning member 43 passes directly above the center of the wafer W.

次いで、図6および図7に示すように、洗浄部材43が洗浄位置に配置された状態で、昇降機構45が、洗浄部材43を下方に移動させ、洗浄部材43の周面をウェハWの表面に接触させる。また、裏面洗浄部材47を昇降させる手段(不図示)が、裏面洗浄部材47を上方に移動させ、裏面洗浄部材47の周面をウェハWの裏面に接触させる。 Next, as shown in FIGS. 6 and 7, with the cleaning member 43 arranged at the cleaning position, the elevating mechanism 45 moves the cleaning member 43 downward, and the peripheral surface of the cleaning member 43 is the surface of the wafer W. To contact. Further, a means (not shown) for raising and lowering the back surface cleaning member 47 moves the back surface cleaning member 47 upward and brings the peripheral surface of the back surface cleaning member 47 into contact with the back surface of the wafer W.

そして、洗浄部材43の周面がウェハWの表面に接触された状態で、液供給ノズル46a、46bからウェハWの表面に向けて洗浄液が噴射されるとともに、洗浄部材43が回転(自転)されることで、ウェハWの表面が洗浄される。同様に、裏面洗浄部材47の周面がウェハWの裏面に接触された状態で、不図示のノズルからウェハWの裏面に向けて洗浄液が噴射されるとともに、裏面洗浄部材47が回転(自転)されることで、ウェハWの裏面が洗浄される。 Then, with the peripheral surface of the cleaning member 43 in contact with the surface of the wafer W, the cleaning liquid is ejected from the liquid supply nozzles 46a and 46b toward the surface of the wafer W, and the cleaning member 43 is rotated (rotated). As a result, the surface of the wafer W is cleaned. Similarly, with the peripheral surface of the back surface cleaning member 47 in contact with the back surface of the wafer W, the cleaning liquid is ejected from a nozzle (not shown) toward the back surface of the wafer W, and the back surface cleaning member 47 rotates (rotates). By doing so, the back surface of the wafer W is cleaned.

洗浄部材43によるウェハWの表面の洗浄が終了したのち、昇降機構45が、洗浄部材43を上方に移動させ、洗浄部材43の周面をウェハWの表面から離間させる。そして、図8および図9に示すように、揺動機構44が、洗浄部材43を揺動軸線A回りに揺動(旋回)させて、洗浄位置からウェハWの外側の待避位置まで移動させる。 After the cleaning of the surface of the wafer W by the cleaning member 43 is completed, the elevating mechanism 45 moves the cleaning member 43 upward and separates the peripheral surface of the cleaning member 43 from the surface of the wafer W. Then, as shown in FIGS. 8 and 9, the rocking mechanism 44 swings (turns) the cleaning member 43 around the rocking axis A to move the cleaning member 43 from the cleaning position to the retreat position outside the wafer W.

その後、図10および図11に示すように、第2揺動機構49が、第2洗浄手段48を第2揺動軸線回りに揺動(旋回)させて、ウェハWの外側の第2待避位置からウェハWの直上の第2洗浄位置まで移動させ、第2洗浄手段48によるウェハWの表面の洗浄が行われる。 After that, as shown in FIGS. 10 and 11, the second rocking mechanism 49 swings (swirls) the second cleaning means 48 around the second swing axis, and the second retreat position on the outside of the wafer W. To the second cleaning position directly above the wafer W, the surface of the wafer W is cleaned by the second cleaning means 48.

第2洗浄手段48によるウェハWの表面の洗浄が終了したのち、第2揺動機構49が、第2洗浄手段48を揺動軸線A回りに揺動(旋回)させて、第2洗浄位置からウェハWの外側の第2待避位置まで移動させる。そして、シャッタ50bが開状態となり、洗浄処理後のウェハWが、ウェハ搬入出口41bを通って洗浄槽41の外側に搬出される。 After the cleaning of the surface of the wafer W by the second cleaning means 48 is completed, the second rocking mechanism 49 swings (turns) the second cleaning means 48 around the swing axis A from the second cleaning position. It is moved to the second shelter position on the outside of the wafer W. Then, the shutter 50b is opened, and the wafer W after the cleaning process is carried out of the cleaning tank 41 through the wafer loading / unloading port 41b.

以上のような本実施の形態によれば、洗浄部材43がウェハWの半径より長い長尺な部材であっても、洗浄部材43の中心から揺動機構44の揺動軸線Aまでの距離LがウェハWの直径より小さくなるように規定されており、洗浄部材43を当該揺動軸線A回りに揺動させることで待避位置から洗浄位置まで移動させるため、洗浄部材43を待避位置から洗浄位置まで直線移動(走行)させる場合に比べて、洗浄部材43を洗浄位置から待避位置まで移動させるのに必要なスペース(すなわち、洗浄部材43が通過するスペース)を低減できる。また、揺動機構44の揺動軸線Aが洗浄槽41の内側に位置するため、洗浄槽41の側壁に走行用の開口を形成する必要がない。したがって、洗浄部材43を退避位置から洗浄位置まで移動可能な洗浄装置16において、洗浄槽41の側壁に走行用の開口を形成することなく、洗浄槽41のフットプリントを小さくすることが可能となる。また、本実施の形態によれば、洗浄槽41の側壁に走行用の開口を形成する必要がないため、洗浄槽41の外側への薬液雰囲気の漏洩を改善できる。 According to the present embodiment as described above, even if the cleaning member 43 is a long member longer than the radius of the wafer W, the distance L from the center of the cleaning member 43 to the rocking axis A of the rocking mechanism 44 Is specified to be smaller than the diameter of the wafer W, and the cleaning member 43 is moved from the retreat position to the cleaning position by swinging the cleaning member 43 around the swing axis A, so that the cleaning member 43 is moved from the retreat position to the cleaning position. The space required to move the cleaning member 43 from the cleaning position to the retreat position (that is, the space through which the cleaning member 43 passes) can be reduced as compared with the case of linearly moving (running) to. Further, since the swing axis A of the swing mechanism 44 is located inside the cleaning tank 41, it is not necessary to form a traveling opening on the side wall of the cleaning tank 41. Therefore, in the cleaning device 16 in which the cleaning member 43 can be moved from the retracted position to the cleaning position, the footprint of the cleaning tank 41 can be reduced without forming a running opening on the side wall of the cleaning tank 41. .. Further, according to the present embodiment, since it is not necessary to form an opening for traveling on the side wall of the cleaning tank 41, it is possible to improve the leakage of the chemical atmosphere to the outside of the cleaning tank 41.

また、本実施の形態によれば、揺動機構44の揺動軸線Aが洗浄部材43の中心軸線の延長線上から離れた位置にあり、洗浄部材43の中心軸線の延長線上にはないため、洗浄部材43の中心から揺動軸線Aまでの距離Lを、洗浄部材43の長さの半分以下に縮めることも可能であり、洗浄部材43を洗浄位置から待避位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を一層低減でき、洗浄槽41のフットプリントをより小さくできる。 Further, according to the present embodiment, the swing axis A of the swing mechanism 44 is located at a position away from the extension line of the central axis of the cleaning member 43, and is not on the extension line of the center axis of the cleaning member 43. It is also possible to reduce the distance L from the center of the cleaning member 43 to the swing axis A to less than half the length of the cleaning member 43, and the space required to move the cleaning member 43 from the cleaning position to the shelter position. (Space through which the cleaning member passes) can be further reduced, and the footprint of the cleaning tank 41 can be made smaller.

また、本実施の形態によれば、揺動機構44が洗浄部材43を待避位置から洗浄位置まで移動させる際の揺動角θが90°より小さいため、当該揺動角が90°以上である場合に比べて、洗浄部材43を洗浄位置から待避地位置まで移動させるのに必要なスペース(洗浄部材が通過するスペース)を一層低減でき、洗浄槽41のフットプリントをより小さくできる。 Further, according to the present embodiment, the swing angle θ when the swing mechanism 44 moves the cleaning member 43 from the retreat position to the cleaning position is smaller than 90 °, so that the swing angle is 90 ° or more. Compared with the case, the space required for moving the cleaning member 43 from the cleaning position to the shelter position (the space through which the cleaning member passes) can be further reduced, and the footprint of the cleaning tank 41 can be made smaller.

また、本実施の形態によれば、昇降機構45の腕部45bが、待避位置の上方を跨ぐように横方向に延びており、洗浄部材43が待避位置に位置するとき、腕部45bの下方の空間に洗浄部材43が収容された状態になるため、洗浄槽41の内部空間の効率的な利用となり、洗浄槽41のフットプリントをより小さくすることが可能となる。 Further, according to the present embodiment, the arm portion 45b of the elevating mechanism 45 extends laterally so as to straddle the upper part of the retreat position, and when the cleaning member 43 is located at the retreat position, the arm portion 45b is below the arm portion 45b. Since the cleaning member 43 is housed in the space of, the internal space of the cleaning tank 41 can be efficiently used, and the footprint of the cleaning tank 41 can be made smaller.

以上、本発明の実施の形態および変形例を例示により説明したが、本発明の範囲はこれらに限定されるものではなく、請求項に記載された範囲内において目的に応じて変更・変形することが可能である。また、各実施の形態および変形例は、処理内容を矛盾させない範囲で適宜組み合わせることが可能である。 Although the embodiments and modifications of the present invention have been described above by way of examples, the scope of the present invention is not limited to these, and the invention may be modified or modified according to an object within the scope described in the claims. Is possible. In addition, each embodiment and modification can be appropriately combined as long as the processing contents do not contradict each other.

1 基板処理装置(研磨装置)
10 ハウジング
12 ロードポート
14a〜14d 研磨ユニット
16 洗浄装置
16a 第1洗浄ユニット(洗浄装置)
16b 第2洗浄ユニット(洗浄装置)
20 乾燥ユニット
22 第1搬送ロボット
24 搬送ユニット
26 第2搬送ロボット
28 第3搬送ロボット
30 研磨制御装置
41 洗浄槽
41a、41b ウェハ搬入出口
42 ウェハ回転機構
42a〜42d ローラ
43 洗浄部材
431 ホルダ
44 揺動機構
45 昇降機構
45a 柱部
45b 腕部
45c 駆動手段
46a、46b 液供給ノズル
47 裏面洗浄部材
471 ホルダ
48 第2洗浄手段
49 第2揺動機構
50a、50b シャッタ
51 クリーニング手段
1 Substrate processing equipment (polishing equipment)
10 Housing 12 Load ports 14a to 14d Polishing unit 16 Cleaning device 16a First cleaning unit (cleaning device)
16b 2nd cleaning unit (cleaning device)
20 Drying unit 22 1st transfer robot 24 Transfer unit 26 2nd transfer robot 28 3rd transfer robot 30 Polishing control device 41 Cleaning tank 41a, 41b Wafer loading / unloading port 42 Wafer rotation mechanism 42a to 42d Roller 43 Cleaning member 431 Holder 44 Swing Mechanism 45 Elevating mechanism 45a Pillar 45b Arm 45c Drive means 46a, 46b Liquid supply nozzle 47 Back surface cleaning member 471 Holder 48 Second cleaning means 49 Second swing mechanism 50a, 50b Shutter 51 Cleaning means

Claims (12)

ウェハの洗浄を行う洗浄空間を画定する洗浄槽と、
前記洗浄槽の内側に配置され、前記ウェハを保持して回転させるウェハ回転機構と、
前記ウェハの表面に接触して洗浄する洗浄部材であって、横方向に延びる中心軸線回りに回転可能な洗浄部材と、
前記洗浄部材を、前記洗浄槽の内側に位置する揺動軸線回りに揺動させて、前記ウェハの外側の待避位置から前記ウェハの直上の洗浄位置まで移動させる揺動機構と、
を備え、
前記洗浄部材の長さは、前記ウェハの半径よりも長く、
前記洗浄部材の中心から前記揺動軸線までの距離は、前記ウェハの直径より小さく、
前記揺動機構が前記洗浄部材を前記揺動軸線回りに揺動させる際に、前記洗浄部材は前記ウェハの中心の直上を通過する
ことを特徴とする洗浄装置。
A cleaning tank that defines a cleaning space for cleaning wafers,
A wafer rotation mechanism that is arranged inside the washing tank and holds and rotates the wafer,
A cleaning member that comes into contact with the surface of the wafer to clean the wafer, and is a cleaning member that can rotate around the central axis extending in the lateral direction.
An oscillating mechanism that oscillates the cleaning member around an oscillating axis located inside the cleaning tank to move the cleaning member from a shelter position on the outside of the wafer to a cleaning position directly above the wafer.
With
The length of the cleaning member is longer than the radius of the wafer.
The distance from the center of the cleaning member to the swing axis is smaller than the diameter of the wafer.
A cleaning device characterized in that when the rocking mechanism swings the cleaning member around the swing axis, the cleaning member passes directly above the center of the wafer.
前記揺動軸線は、前記洗浄部材の前記中心軸線の延長線上から離れた位置にある
ことを特徴とする請求項1に記載の洗浄装置。
The cleaning device according to claim 1, wherein the rocking axis is located at a position away from an extension of the central axis of the cleaning member.
前記揺動機構が前記洗浄部材を前記待避位置から前記洗浄位置まで移動させる際の揺動角は90°より小さい
ことを特徴とする請求項1または2に記載の洗浄装置。
The cleaning device according to claim 1 or 2, wherein the rocking angle when the rocking mechanism moves the cleaning member from the retracting position to the cleaning position is smaller than 90 °.
前記洗浄部材を昇降させる昇降機構と、
前記ウェハの表面に対して前記洗浄部材が加える荷重をコントロールする荷重コントロール機構と、
をさらに備えたことを特徴とする請求項1〜3のいずれかに記載の洗浄装置。
An elevating mechanism that elevates and elevates the cleaning member,
A load control mechanism that controls the load applied by the cleaning member to the surface of the wafer,
The cleaning device according to any one of claims 1 to 3, further comprising.
前記昇降機構は、
前記洗浄槽の壁面を貫通するように設けられた縦方向に延びる柱部と、
前記柱部から横方向に延びる腕部と、
前記洗浄槽の外側に突き出る前記柱部の端部に設けられた駆動手段と、
を有し、
前記揺動機構は、前記腕部の先端部に設けられており、
前記昇降機構は、前記洗浄部材と前記揺動機構とを一体に昇降させる
ことを特徴とする請求項4に記載の洗浄装置。
The elevating mechanism
A pillar portion extending in the vertical direction provided so as to penetrate the wall surface of the washing tank, and
An arm extending laterally from the pillar and
A driving means provided at the end of the pillar portion protruding to the outside of the cleaning tank, and
Have,
The swing mechanism is provided at the tip of the arm.
The cleaning device according to claim 4, wherein the elevating mechanism integrally raises and lowers the cleaning member and the swing mechanism.
前記腕部は、前記待避位置の上方または下方を跨ぐように横方向に延びている
ことを特徴とする請求項5に記載の洗浄装置。
The cleaning device according to claim 5, wherein the arm portion extends laterally so as to straddle the upper or lower part of the retreat position.
ウェハの研磨を行う研磨ユニットと、
研磨後のウェハの洗浄を行う洗浄ユニットと、
を備え、
前記洗浄ユニットは、
ウェハの洗浄を行う洗浄空間を画定する洗浄槽と、
前記洗浄槽の内側に配置され、前記ウェハを保持して回転させるウェハ回転機構と、
前記ウェハの表面に接触して洗浄する洗浄部材であって、横方向に延びる中心軸線回りに回転可能な洗浄部材と、
前記洗浄部材を、前記洗浄槽の内側に位置する揺動軸線回りに揺動させて、前記ウェハの外側の待避位置から前記ウェハの直上の洗浄位置まで移動させる揺動機構と、
を備え、
前記洗浄部材の長さは、前記ウェハの半径よりも長く、
前記洗浄部材の中心から前記揺動軸線までの距離は、前記ウェハの直径より小さく、
前記揺動機構が前記洗浄部材を前記揺動軸線回りに揺動させる際に、前記洗浄部材は前記ウェハの中心の直上を通過する
ことを特徴とする研磨装置。
A polishing unit that polishes wafers and
A cleaning unit that cleans the wafer after polishing, and
With
The cleaning unit is
A cleaning tank that defines a cleaning space for cleaning wafers,
A wafer rotation mechanism that is arranged inside the washing tank and holds and rotates the wafer,
A cleaning member that comes into contact with the surface of the wafer to clean the wafer, and is a cleaning member that can rotate around the central axis extending in the lateral direction.
An oscillating mechanism that oscillates the cleaning member around an oscillating axis located inside the cleaning tank to move the cleaning member from a shelter position on the outside of the wafer to a cleaning position directly above the wafer.
With
The length of the cleaning member is longer than the radius of the wafer.
The distance from the center of the cleaning member to the swing axis is smaller than the diameter of the wafer.
A polishing apparatus characterized in that when the rocking mechanism swings the cleaning member around the swing axis, the cleaning member passes directly above the center of the wafer.
前記揺動軸線は、前記洗浄部材の前記中心軸線の延長線上から離れた位置にある
ことを特徴とする請求項7に記載の研磨装置。
The polishing apparatus according to claim 7, wherein the rocking axis is located at a position away from an extension of the central axis of the cleaning member.
前記揺動機構が前記洗浄部材を前記待避位置から前記洗浄位置まで移動させる際の揺動角は90°より小さい
ことを特徴とする請求項7または8に記載の研磨装置。
The polishing apparatus according to claim 7 or 8, wherein the swing angle when the swing mechanism moves the cleaning member from the relief position to the cleaning position is smaller than 90 °.
前記洗浄部材を昇降させる昇降機構と、
前記ウェハの表面に対して前記洗浄部材が加える荷重をコントロールする荷重コントロール機構と、
をさらに備えたことを特徴とする請求項7〜9のいずれかに記載の研磨装置。
An elevating mechanism that elevates and elevates the cleaning member,
A load control mechanism that controls the load applied by the cleaning member to the surface of the wafer,
The polishing apparatus according to any one of claims 7 to 9, further comprising.
前記昇降機構は、
前記洗浄槽の壁面を貫通するように設けられた縦方向に延びる柱部と、
前記柱部から横方向に延びる腕部と、
前記筐体の外側に突き出る前記柱部の端部に設けられた駆動手段と、
を有し、
前記揺動機構は、前記腕部の先端部に設けられており、
前記昇降機構は、前記洗浄部材と前記揺動機構とを一体に昇降させる
ことを特徴とする請求項10に記載の研磨装置。
The elevating mechanism
A pillar portion extending in the vertical direction provided so as to penetrate the wall surface of the washing tank, and
An arm extending laterally from the pillar and
A drive means provided at the end of the pillar portion protruding to the outside of the housing, and
Have,
The swing mechanism is provided at the tip of the arm.
The polishing apparatus according to claim 10, wherein the elevating mechanism raises and lowers the cleaning member and the swing mechanism integrally.
前記腕部は、前記待避位置の上方または下方を跨ぐように横方向に延びている
ことを特徴とする請求項11に記載の研磨装置。
The polishing apparatus according to claim 11, wherein the arm portion extends laterally so as to straddle the upper or lower side of the retreat position.
JP2019236617A 2019-12-26 2019-12-26 Cleaning equipment, polishing equipment Active JP7450385B2 (en)

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KR1020200180657A KR20210083192A (en) 2019-12-26 2020-12-22 Cleaning apparatus and polishing apparatus
CN202011560759.7A CN113043158B (en) 2019-12-26 2020-12-25 Cleaning device and polishing device
TW109146118A TW202132049A (en) 2019-12-26 2020-12-25 Cleaning apparatus and polishing apparatus
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US5775983A (en) 1995-05-01 1998-07-07 Applied Materials, Inc. Apparatus and method for conditioning a chemical mechanical polishing pad
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