JP2021093540A - ケイ素含有膜の堆積のための組成物及びそれを用いた方法 - Google Patents
ケイ素含有膜の堆積のための組成物及びそれを用いた方法 Download PDFInfo
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- JP2021093540A JP2021093540A JP2021028584A JP2021028584A JP2021093540A JP 2021093540 A JP2021093540 A JP 2021093540A JP 2021028584 A JP2021028584 A JP 2021028584A JP 2021028584 A JP2021028584 A JP 2021028584A JP 2021093540 A JP2021093540 A JP 2021093540A
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- silicon
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 32
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Abstract
Description
−20〜約400℃の範囲の温度で維持された反応器中に、表面特徴部を有する基材を設置する工程と、
以下の式I又はII:
約100〜約1000℃の範囲の1つ又は複数の温度で基材を酸素源で処理して、表面特徴部の少なくとも一部上に膜を形成する工程と
を含む方法が提供される。1つの実施形態において、ケイ素含有膜は、酸化ケイ素又は炭素ドープ酸化ケイ素の膜から選択される。この又は別の実施形態において、膜は、約100〜約1000℃の範囲の温度で、UV照射にさらされる時間の少なくとも一部の間に、酸素源にさらされる。方法の工程は、表面特徴部が膜で充填されるまで繰り返すことができる。
表面特徴部を含む基材を反応器中に設置する工程であって、基材が約−20〜約400℃の範囲の1つ又は複数の温度で維持され、反応器の圧力が100torr以下で維持される工程と、
以下の式I又はII:
反応器中に酸素源を提供して、少なくとも1つの化合物と反応させ、膜を形成し、表面特徴部の少なくとも一部を覆う工程と、
約100〜1000℃の1つ又は複数の温度で膜をアニールして、表面特徴部の少なくとも一部をコーティングする工程と、
約20〜約1000℃の範囲の1つ又は複数の温度で基材を酸素源で処理して、表面特徴部の少なくとも一部上にケイ素含有膜を形成する工程とを含む方法が提供される。幾つかの実施形態において、酸素源は、水蒸気、水プラズマ、オゾン、酸素、酸素プラズマ、酸素/ヘリウムプラズマ、酸素/アルゴンプラズマ、窒素酸化物プラズマ、二酸化炭素プラズマ、過酸化水素、有機過酸化物、及びそれらの混合物からなる群より選択される。この又は他の実施形態において、方法の工程は、表面特徴部がケイ素含有膜で充填されるまで繰り返される。水蒸気が酸素源として用いられる実施形態において、基材の温度は、約−20〜約40℃又は約−10〜約25℃の範囲である。
−20〜約400℃の範囲の温度に加熱され、100torr以下の圧力で維持された反応器中に、表面特徴部を含む基材を設置する工程と、
以下の式I又はII:
反応器中にプラズマ源を提供し、化合物と反応させて、表面特徴部の少なくとも一部上にコーティングを形成する工程と、
約100〜1000℃又は約100〜400℃の範囲の1つ又は複数の温度でコーティングをアニールする工程とを含む方法が提供される。1つの特定の実施形態において、プラズマ源は、窒素プラズマ、窒素及びヘリウムを含むプラズマ、窒素及びアルゴンを含むプラズマ、アンモニアプラズマ、アンモニア及びヘリウムを含むプラズマ、アンモニア及びアルゴンを含むプラズマ、ヘリウムプラズマ、アルゴンプラズマ、水素プラズマ、水素及びヘリウムを含むプラズマ、水素及びアルゴンを含むプラズマ、アンモニア及び水素を含むプラズマ、有機アミンプラズマ、及びそれらの混合物からなる群より選択される。流動性プラズマCVD法については、工程は、表面特徴部が1つ又は複数の高密度化膜で充填されるまで繰り返すことができる。
本発明の1つの態様は、化合物が1,3−ビス(tert−ブチル)−2−メチルシクロジシラザンを含む、前述の態様のいずれかに関する。
本発明の別の態様は、化合物が1,3−ビス(tert−ブトキシ)−1,3−ジメチルジシロキサンを含む、前述の態様のいずれかに関する。
本発明の更なる態様は、方法のいずれかにより形成されたケイ素含有膜に関する。
本発明の様々な態様は、単独で又は互いに組み合わせて使用することができる。
−20〜約400℃の範囲の温度で維持された反応器中に、表面特徴部を有する基材を設置する工程、
以下の式I又はII:
約100〜約1000℃の範囲の1つ又は複数の温度で基材を酸素源で処理して、表面特徴部の少なくとも一部上に酸化ケイ素膜を形成して、酸化ケイ素膜を提供する工程を含む。代替的に、膜を、約100〜約1000℃の範囲の温度でUV照射にさらしながら、酸素源にさらすことができる。プロセスの工程は、膜収縮を低減するために、特徴部が高品質の酸化ケイ素膜で充填されるまで繰り返すことができる。
−20〜約400℃の範囲の温度に加熱され、100torr以下の圧力で維持された反応器中に、表面特徴部を含む1つ又は複数の基材を設置する工程、
以下の式I又はII:
反応器中に酸素源を提供して、少なくとも1つの化合物と反応させて、膜を形成し、表面特徴部の少なくとも一部を覆う工程、
約100〜1000℃、好ましくは100〜400℃の1つ又は複数の温度で膜をアニールして、ケイ素含有膜が表面特徴部の少なくとも一部上をコーティングすることを可能とする工程を含む。この実施形態の酸素源は、水蒸気、水プラズマ、オゾン、酸素、酸素プラズマ、酸素/ヘリウムプラズマ、酸素/アルゴンプラズマ、窒素酸化物プラズマ、二酸化炭素プラズマ、過酸化水素、有機過酸化物、及びそれらの混合物からなる群より選択される。プロセスは、表面特徴部がケイ素含有膜で充填されるまで繰り返すことができる。この実施形態において水蒸気を酸素源として用いる場合、基材の温度は、好ましくは−20〜40℃、最も好ましくは−10〜25℃である。
−20〜約400℃の範囲の温度に加熱され、100torr以下の圧力で維持された反応器中に、表面特徴部を含む1つ又は複数の基材を設置する工程、
以下の式I又はII:
反応器中にプラズマ源を提供して、化合物と反応させて、表面特徴部の少なくとも一部上にコーティングを形成する工程、及び
約100〜1000℃、好ましくは約100〜400℃の範囲の1つ又は複数の温度でコーティングをアニールして、表面特徴部の少なくとも一部上にケイ素含有膜を形成する工程を含む。この実施形態のためのプラズマは、窒素プラズマ、窒素及びヘリウムを含むプラズマ、窒素及びアルゴンを含むプラズマ、アンモニアプラズマ、アンモニア及びヘリウムを含むプラズマ、アンモニア及びアルゴンを含むプラズマ、ヘリウムプラズマ、アルゴンプラズマ、水素プラズマ、水素及びヘリウムを含むプラズマ、水素及びアルゴンを含むプラズマ、アンモニア及び水素を含むプラズマ、有機アミンプラズマ、及びそれらの混合物からなる群より選択される。流動性プラズマCVDについて、プロセスは、ビア又はトレンチが1つ又は複数の高密度膜で充填されるまで複数回繰り返すことができる。
流動性化学気相堆積(FCVD)膜を、中抵抗率(8〜12Ωcm)の単結晶シリコンウエハ基材及びSiパターンウエハ上に堆積した。パターンウエハについては、好ましいパターン幅は50〜100nmであり、5:1〜20:1のアスペクト比を持つ。
その場流動性CVD堆積を、実験計画法(DOE)を使用して行った。実験計画には、100〜5000mg/分、好ましくは1000〜2000mg/分の前駆体流;100〜3000sccm、好ましくは500〜1500sccmのNH3流;0.75〜12Torr、好ましくは4〜8Torrのチャンバー圧力;100〜1000W、好ましくは150〜300Wのその場プラズマ電力;及び0〜550℃、好ましくは0〜30℃の範囲の堆積温度を含んでいた。
前駆体として1,3−ビス(tert−ブチル)−2−メチルシクロジシラザンと、反応ガスとしてN2、NH3若しくはH2又はN2、NH3、H2の組み合わせとを使用して、多くのSiCN膜を8インチのシリコン基材及びパターン化基材上に堆積して、流動性、膜密度、及びウェットエッチ速度を比較した。
前駆体として1,3−ビス(tert−ブトキシ)−1,3−ジメチルジシロキサンを使用して、多くの酸化ケイ素膜を8インチシリコン基材及びパターン化基材上に堆積して、流動性、膜密度、及びウェットエッチ速度を比較した。
Claims (18)
- エーテル、有機アミン、アルキル炭化水素、芳香族炭化水素、及び3級アミノエーテルからなる群より選択される少なくとも1つの溶媒をさらに含む、請求項1に記載の組成物。
- オクタン、エチルシクロヘキサン、シクロオクタン、及びトルエンからなる群より選択される少なくとも1つの溶媒をさらに含む、請求項1に記載の組成物。
- 流動性化学気相堆積を使用して、酸化ケイ素及び炭素ドープ酸化ケイ素の膜から選択される膜を堆積するための方法であって、
反応器中に表面特徴部を含む基材を設置する工程であって、前記基材が約−20〜約400℃の範囲の1つ又は複数の温度で維持され、前記反応器の圧力が100torr以下で維持される工程と、
以下の式I又はII:
約500〜約1000℃の範囲の1つ又は複数の温度で、前記種を酸素源で処理して、前記表面特徴部の少なくとも一部上に前記膜を形成する工程とを含む、方法。 - 前記酸素源が、水(H2O)、酸素(O2)、酸素プラズマ、オゾン(O3)、NO、N2O、一酸化炭素(CO)、二酸化炭素(CO2)、N2Oプラズマ、一酸化炭素(CO)プラズマ、二酸化炭素(CO2)プラズマ、及びそれらの組み合わせからなる群より選択される、請求項4に記載の方法。
- 堆積プロセスにおいて、酸化ケイ素及び炭素ドープ酸化ケイ素の膜から選択される膜を堆積するための方法であって、
約−20〜約400℃の範囲の1つ又は複数の温度で維持された反応器中に、表面特徴部を有する基材を設置する工程と、
以下の式I又はII:
約100〜約1000℃の範囲の1つ又は複数の温度で、前記基材を酸素源で処理して、前記表面特徴部の少なくとも一部上に酸化ケイ素膜を形成して、前記膜を提供する工程とを含む、方法。 - 前記窒素源が、アンモニア、ヒドラジン、モノアルキルヒドラジン、ジアルキルヒドラジン、窒素、窒素プラズマ、窒素及び水素を含むプラズマ、窒素及びヘリウムを含むプラズマ、窒素及びアルゴンを含むプラズマ、アンモニアプラズマ、アンモニア及びヘリウムを含むプラズマ、アンモニア及びアルゴンを含むプラズマ、アンモニア及び窒素を含むプラズマ、NF3、NF3プラズマ、有機アミンプラズマ、並びにそれらの混合物からなる群より選択される、請求項6に記載の方法。
- 前記堆積プロセスがプラズマ化学気相堆積であり、プラズマがその場で生成される、請求項6に記載の方法。
- 前記堆積プロセスがプラズマ化学気相堆積であり、プラズマがリモートで生成される、請求項8に記載の方法。
- 前記酸素源が、水(H2O)、酸素(O2)、酸素プラズマ、オゾン(O3)、NO、N2O、一酸化炭素(CO)、二酸化炭素(CO2)、N2Oプラズマ、一酸化炭素(CO)プラズマ、二酸化炭素(CO2)プラズマ、及びそれらの組み合わせからなる群より選択される、請求項6に記載の方法。
- 前記膜があるウェットエッチ速度を有し、前記ウェットエッチ速度が、希釈HF中で、熱酸化物膜のウェットエッチ速度に対して2.2倍未満である、請求項6に記載の方法。
- プラズマ、紫外線、赤外線、又はそれらの組み合わせから選択される少なくとも1つで前記膜を処理する工程をさらに含む、請求項6に記載の方法。
- 流動性化学気相堆積を使用して、ケイ素含有膜を堆積するための方法であって、
反応器中に表面特徴部を含む基材を設置する工程であって、前記基材が約−20〜約400℃の範囲の1つ又は複数の温度で維持され、前記反応器の圧力が100torr以下で維持される工程と、
以下の式I又はII:
約100〜約1000℃の範囲の1つ又は複数の温度で、前記種をプラズマ源で処理して、前記表面特徴部の少なくとも一部上に前記膜を形成する工程とを含む、方法。 - 前記プラズマ源が、窒素プラズマ、窒素及びヘリウムを含むプラズマ、窒素及びアルゴンを含むプラズマ、アンモニアプラズマ、アンモニア及びヘリウムを含むプラズマ、アンモニア及びアルゴンを含むプラズマ、ヘリウムプラズマ、アルゴンプラズマ、水素プラズマ、水素及びヘリウムを含むプラズマ、水素及びアルゴンを含むプラズマ、アンモニア及び水素を含むプラズマ、有機アミンプラズマ、及びそれらの混合物からなる群より選択される、請求項13に記載の方法。
- 前記ケイ素含有膜が、窒化ケイ素、炭素ドープ窒化ケイ素、酸窒化ケイ素、及び炭素ドープ酸窒化ケイ素の膜からなる群より選択される、請求項13に記載の方法。
- 前記化合物が、1,3−ビス(tert−ブチル)−2−メチルシクロジシラザンを含む、請求項1に記載の組成物。
- 前記化合物が、1,3−ビス(tert−ブトキシ)−1,3−ジメチルジシロキサンを含む、請求項1に記載の組成物。
- 前記膜が、前記表面特徴部中に又は前記表面特徴部上にボイドを含まない、請求項13に記載の方法により形成された、ケイ素含有膜。
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IL260069B1 (en) | 2023-10-01 |
IL305582A (en) | 2023-10-01 |
EP3394315A4 (en) | 2019-10-30 |
TWI617693B (zh) | 2018-03-11 |
JP7139475B2 (ja) | 2022-09-20 |
IL260069B2 (en) | 2024-02-01 |
IL260069A (en) | 2018-07-31 |
KR20230170149A (ko) | 2023-12-18 |
KR20210028742A (ko) | 2021-03-12 |
JP2019503590A (ja) | 2019-02-07 |
SG11201805289WA (en) | 2018-07-30 |
WO2017112732A1 (en) | 2017-06-29 |
KR20180087450A (ko) | 2018-08-01 |
EP3394315A1 (en) | 2018-10-31 |
KR20230006032A (ko) | 2023-01-10 |
KR102613423B1 (ko) | 2023-12-12 |
US20190292658A1 (en) | 2019-09-26 |
JP6845252B2 (ja) | 2021-03-17 |
CN108603287A (zh) | 2018-09-28 |
CN108603287B (zh) | 2021-11-02 |
TW201723213A (zh) | 2017-07-01 |
CN114016001A (zh) | 2022-02-08 |
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