JP2021091963A - Oxide sputtering target, and method for producing oxide sputtering target - Google Patents

Abstract

To provide an oxide sputtering target that can prevent the occurrence of abnormal discharge even when sputtering deposition is performed at high output, and can perform the sputtering deposition stably with high production efficiency.SOLUTION: The oxide sputtering target is formed of an oxide that contains, as metal components, zirconium, silicon and indium; and the average particle diameter of composite oxide phases 13 containing In and Si is 10 μm or less. It is preferable that the maximum particle diameter of the composite oxide phases 13 is 50 μm or less.SELECTED DRAWING: Figure 1

Description

The present invention relates to an oxide sputtering target composed of an oxide containing zirconium, silicon and indium as a metal component, and a method for producing the oxide sputtering target.

Oxide films containing zirconium, silicon, and indium as metal components have high resistance. For example, in display panels such as liquid crystal displays, organic EL displays, and touch panels, malfunctions due to charging of liquid crystal elements, organic EL elements, and the like. It is used as a shield layer to prevent.
Here, when the above-mentioned shield layer is applied to an in-cell type touch panel, the shield layer is also required to have an action of allowing a touch signal to reach a sensor portion inside the panel while eliminating noise from the outside. Further, in this shield layer, in order to ensure the visibility of the display panel, it is also required to have high transparency of visible light.

Further, the oxide film containing zirconium, silicon and indium as the above-mentioned metal components is also used as a dielectric layer and a protective film of a phase change type optical disk used as an information recording medium.
Here, Patent Documents 1 to 4 propose an oxide sputtering target used for forming an oxide film containing zirconium, silicon, and indium as a metal component.

Japanese Unexamined Patent Publication No. 2013-142194 JP-A-2007-327103 Japanese Unexamined Patent Publication No. 2009-062585 Japanese Unexamined Patent Publication No. 2018-040032

By the way, recently, it is required to form an oxide film containing zirconium, silicon and indium as a metal component in a large area and with high production efficiency. Therefore, it is necessary to cope with high output at the time of sputter film formation.
However, in an oxide sputtering target containing zirconium, silicon, and indium as metal components, abnormal discharge may occur when sputtered film is formed at high output, and stable sputtered film formation may not be possible. It was.

The present invention has been made in view of the above-mentioned circumstances, and it is possible to suppress the occurrence of abnormal discharge even when sputtered film formation is performed at high output, and sputter film formation can be stably performed with high production efficiency. It is an object of the present invention to provide a possible oxide sputtering target and a method for producing the oxide sputtering target.

As a result of diligent studies by the present inventors in order to solve the above problems, in the oxide sputtering target containing zirconium, silicon and indium as metal components, a composite oxide phase containing In and Si is present. It was confirmed that if this composite oxide phase is coarse, an abnormal discharge occurs when a sputtered film is formed at high output.

The present invention has been made based on the above findings, and the oxide sputtering target of the present invention is an oxide sputtering target composed of an oxide containing zirconium, silicon and indium as a metal component. It is characterized in that the average particle size of the composite oxide phase containing In and Si is 10 μm or less.

According to the oxide sputtering target of the present invention, since it is composed of an oxide containing zirconium, silicon and indium as a metal component, an oxide film having high resistance and excellent visible light transmission can be obtained. It becomes possible to form a film.
Since the average particle size of the composite oxide phase containing In and Si is 10 μm or less, it is possible to suppress the occurrence of abnormal discharge due to the composite oxide phase when sputter film formation is performed at high output. It is possible to stably perform sputter film formation.

Here, in the oxide sputtering target of the present invention, the maximum particle size of the composite oxide phase is preferably 50 μm or less.
In this case, since the maximum particle size of the composite oxide phase is limited to 50 μm or less, it is possible to further suppress the occurrence of abnormal discharge when sputter film formation is performed at high output.

Further, in the oxide sputtering target of the present invention, it is preferable that the total metal component is 100 mass% and the Si content is 15 mass% or less.
In this case, since the Si content is 15 mass% or less, _{the volume of the SiO 2 powder which is the raw material powder does not dominate, and the SiO 2} powder which becomes the precursor of the composite oxide phase at the time of sintering is not dominant. Contact with each other can be suppressed, and the average particle size and the maximum particle size of the composite oxide can be sufficiently reduced.
In the present specification, the metal component includes a metalloid such as Si.

The method for producing an oxide sputtering target of the present invention is a method for producing an oxide sputtering target for producing the above-mentioned oxide sputtering target, in which zirconium oxide powder, silicon oxide powder and indium oxide powder are pulverized and mixed to form a slurry. It is characterized by having a step of forming a sintered raw material powder by drying the obtained slurry by a spray-drying method.

According to the method for producing an oxide sputtering target of the present invention, zirconium oxide powder, silicon oxide powder and indium oxide powder are pulverized and mixed to obtain a slurry, and the obtained slurry is dried by a spray-drying method. .. Therefore, it is possible to suppress uneven distribution of silicon oxide powder having a smaller specific gravity than zirconium oxide powder and indium oxide powder, and to obtain a sintered raw material powder in which zirconium oxide powder, silicon oxide powder and indium oxide powder are uniformly mixed. It becomes. Therefore, in the oxide sputtering target after sintering, it is possible to reduce the average particle size and the maximum particle size of the composite oxide phase.

According to the present invention, an oxide sputtering target capable of suppressing the occurrence of abnormal discharge even when sputtered film is formed at high output, and capable of stably performing sputtered film formation with production efficiency, and an oxide. A method for manufacturing a sputtering target can be provided.

It is a structure observation photograph of the oxide sputtering target which concerns on one Embodiment of this invention. (A) is an observation result at a magnification of 300 times, and (b) is an observation result at a magnification of 3000 times. It is a flow chart which shows the manufacturing method of the oxide sputtering target which concerns on one Embodiment of this invention. In the Example, it is explanatory drawing which shows the sampling position of the sample which measures the particle diameter of the plate-shaped oxide sputtering target. It is explanatory drawing which shows the sampling position of the sample which measures the particle diameter of the cylindrical oxide sputtering target in an Example. (A) is a bottom surface or an upper surface (a surface perpendicular to the longitudinal direction) of a cylindrical oxide sputtering target. (B) is a side surface (plane parallel to the longitudinal direction) of the cylindrical oxide sputtering target.

Hereinafter, the oxide sputtering target according to the embodiment of the present invention will be described with reference to the attached drawings.
The oxide sputtering target according to the present embodiment is a shield layer or an information recording medium arranged for preventing static electricity in a liquid crystal display panel, an organic EL display panel, and a display panel such as a touch panel. It is used when forming an oxide film suitable as a dielectric layer or a protective film of a type optical disk.

The shape of the oxide sputtering target of the present embodiment is not particularly limited, and may be a rectangular flat plate type sputtering target having a rectangular sputtered surface, or a disk type having a circular sputtered surface. It may be a sputtering target. Alternatively, it may be a cylindrical sputtering target in which the sputtering surface is a cylindrical surface.

The oxide sputtering target according to the present embodiment is composed of an oxide containing zirconium, silicon, and indium as a metal component.
As shown in FIG. 1, this oxide sputtering target has a zirconium oxide phase 11, an indium oxide phase 12, and a composite oxide phase 13 containing In and Si. In the present embodiment, the composite oxide phase 13 is an In ₂ Si ₂ O ₇ phase.

In the oxide sputtering target according to the present embodiment, the average particle size of the composite oxide phase 13 is 10 μm or less.
Further, in the present embodiment, it is preferable that the maximum particle size of the composite oxide phase 13 is 50 μm or less.

The reasons why the oxide composition, the average particle size of the composite oxide phase 13, and the maximum particle size of the composite oxide phase 13 are defined as described above in the oxide sputtering target of the present embodiment are shown below.

(Oxide composition)
The oxide sputtering target of the present embodiment is composed of an oxide containing zirconium, silicon, and indium as a metal component. In an oxide sputtering target having such a composition, it is possible to form an oxide film having a sufficiently high resistance value and excellent transparency of visible light.
Here, in the present embodiment, assuming that the total of the metal components is 100 mass%, the Zr content is within the range of 2 mass% or more and 27 mass% or less, the In content is within the range of 65 mass% or more and 95 mass% or less, and Si. The content is preferably in the range of 0.5 mass% or more and 15 mass% or less. Further, the total content of Zr, In and Si is preferably 95 mass% or more.

Specifically, the oxide sputtering target of the present embodiment is composed of an oxide composed of a metal component and oxygen and an unavoidable impurity, and the metal component is Zr: 2 mass% or more and 27 mass with respect to a total of 100 mass% of the metal component. % Or less, In: 65 mass% or more and 95 mass% or less, and Si: 0.5 mass% or more and 15 mass% or less, and the balance is preferably an unavoidable metal. Inevitable impurities are elements other than oxygen and metal components. The unavoidable metal is a metal element other than the element whose content is specified above.
As described above, the metal component includes a metalloid such as Si. Therefore, the unavoidable metal includes a metalloid.
Hf has similar chemical properties to Zr, and it is difficult to separate Hf and Zr. Therefore, HfO ₂ is inevitably contained in _{the ZrO 2} powder of the industrial raw material. Therefore, as an unavoidable metal, Hf can be mentioned.

When the Zr content is 2 mass% or more, the durability of the formed oxide film can be improved, the hardness becomes hard, and the scratch resistance becomes strong. On the other hand, when the Zr content is 27 mass% or less, the increase in the refractive index can be suppressed and the occurrence of unnecessary reflection can be suppressed, so that the decrease in the transmittance of visible light can be suppressed.
It is preferable that the total of the metal components is 100 mass% and the lower limit of the Zr content is 5 mass% or more. The upper limit of the Zr content is preferably 20 mass% or less, and more preferably 11 mass% or less.

When the In content is 65 mass% or more, the conductivity of the oxide sputtering target can be ensured, and the oxide film can be stably formed by direct current (DC) sputtering. On the other hand, when the In content is 95 mass% or less, it is possible to suppress a decrease in the transmittance of short wavelengths and ensure visibility.
The total of the metal components is 100 mass%, and the lower limit of the In content is preferably 75 mass% or more, more preferably 87 mass% or more. The upper limit of the In content is preferably 94 mass% or less, and more preferably 90 mass% or less.

When the Si content is 0.5 mass% or more, the flexibility of the oxide sputtering target can be ensured and the crack resistance of the film is improved. On the other hand, an attempt to more than 15 mass% content of Si, the volume of the SiO ₂ powder as the raw material powder becomes dominant, during sintering, the is a precursor of a composite oxide phase SiO ₂ powder contact each other As a result, the average and maximum particle sizes of the composite oxide become large. Further, when the Si content is 15 mass% or less, the decrease in the conductivity of the film can be suppressed, and the oxide film can be stably formed by direct current (DC) sputtering.
The total of the metal components is 100 mass%, and the lower limit of the Si content is preferably 2 mass% or more, and more preferably 4 mass% or more. The upper limit of the Si content is preferably 8 mass% or less, and more preferably 7 mass% or less.
When the total content of Zr, In and Si is 95 mass% or more, Zr, In and Si are the main components, so that the above-mentioned basic characteristics of the film can be ensured. Assuming that the total metal components are 100 mass%, the higher the total content of Zr, In, and Si is, the more preferably 100 mass%.

(Average particle size of composite oxide phase 13)
If the particle size of the composite oxide phase 13 is coarse, it causes an abnormal discharge when a sputtered film is formed at a high output.
Therefore, in the present embodiment, the average particle size of the composite oxide phase 13 is limited to 10 μm or less, and the composite oxide phase 13 is dispersed in the tissue.
The average particle size of the composite oxide phase 13 is preferably 5 μm or less in order to further suppress the occurrence of abnormal discharge when sputtered film is formed at high output. The lower limit of the average particle size is not particularly limited, but the manufacturable range is, for example, 0.01 μm or more.

(Maximum particle size of composite oxide phase 13)
As described above, the composite oxide phase 13 causes an abnormal discharge when a sputter film is formed at a high output. Therefore, in the present embodiment, by limiting the maximum particle size of the composite oxide phase 13 to 50 μm or less, it is possible to further suppress the occurrence of abnormal discharge when sputter film formation is performed at high output.
The maximum particle size of the composite oxide phase 13 is more preferably 20 μm or less, and more preferably 15 μm or less. The lower limit of the maximum particle size is not particularly limited, but the manufacturable range is, for example, 0.1 μm or more.

Next, the method for producing the oxide sputtering target according to the present embodiment described above will be described with reference to FIG.

(Sintered raw material powder forming step S01)
First, zirconium oxide powder (for example, ZrO ₂ powder), silicon oxide powder (for example, SiO ₂ powder) and indium oxide powder (for example, In ₂ O ₃ powder) are prepared.
Here, the purity of the zirconium oxide powder, the silicon oxide powder, and the indium oxide powder is preferably 99.9 mass% or more, and the average particle size is preferably in the range of 0.1 μm or more and 20 μm or less.
The average particle size of the raw material powder is the median diameter (D50) measured by the laser diffraction / scattering method according to the international standard ISO13320: 2009, and the median diameter (D50) here is the particle size at which the volume accumulation is 50%. Represents.
ZrO ₂ has a very strong bond with _{HfO 2, and even high-purity ZrO 2 powder contains HfO 2} of about 2.5 mass% at the maximum as an unavoidable impurity. Therefore, the purity of _{ZrO 2} is usually calculated by the difference number method by measuring the content of impurities other than _{HfO 2 and using the total amount of the obtained impurities.} The purity of the above ZrO _{2 powder is calculated by measuring the contents of impurities Fe 2} O ₃ , SiO ₂ , TiO ₂ and Na ₂ O and subtracting the total content of these compounds from 100 mass%. Is. _{The ZrO 2} powder of the present embodiment may _{contain HfO 2} in a maximum of 2.5 mass%. The produced oxide sputtering target also contains hafnium oxide in a maximum of 0.5 mass% as an unavoidable impurity.

These zirconium oxide powder, silicon oxide powder and indium oxide powder are weighed so as to have a predetermined composition ratio. The weighed raw material powder is pulverized and mixed using a wet pulverizing and mixing device such as a ball mill or a basket mill. Here, water is used as the solvent. The slurry obtained by pulverization and mixing is dried to form a sintered raw material powder.

Here, since the silicon oxide powder has a smaller specific gravity than the zirconium oxide powder and the indium oxide powder, the silicon oxide powder is unevenly distributed when the slurry obtained by pulverizing and mixing is dried, and the silicon oxide powder is mixed with In after sintering. The composite oxide phase 13 containing Si may be coarsened. Therefore, in the present embodiment, when the slurry obtained by pulverizing and mixing is dried, it is rapidly dried by, for example, a spray drying method. As a result, uneven distribution of silicon oxide powder is suppressed, and a sintered raw material powder (raw material powder for sintering) in which zirconium oxide powder, silicon oxide powder and indium oxide powder are uniformly mixed is obtained.
Further, if the particle size of the silicon oxide powder is large, the composite oxide phase 13 may be coarsened. Therefore, the particle size of the silicon oxide powder is preferably 20 μm or less, and more preferably 18 μm or less.

(Molding step S02)
Next, the obtained sintered raw material powder is filled in a molding die and pressed to obtain a molded product having a predetermined shape. As a pressurizing method, a press, CIP, or the like is used. The pressurizing pressure at this time is preferably in the range of 20 MPa or more and 300 MPa or less. The temperature may be room temperature, but in order to improve the strength of the molded product, it is preferable to perform press molding at a temperature in the range of 900 ° C. or higher and 950 ° C. or lower. This promotes neck formation and improves the strength of the molded product. Alternatively, a binder may be added to the sintered raw material powder for pressure molding.

(Sintering step S03)
This molded product is placed in a firing device having an oxygen introduction function, heated while introducing oxygen, and sintered to obtain a sintered body.
At this time, the amount of oxygen introduced is preferably in the range of 3 L / min or more and 50 L / min or less. The rate of temperature rise is preferably in the range of 50 ° C./h or more and 200 ° C./h or less.
Then, the molded product is held in a temperature range of 1200 ° C. or higher and 1400 ° C. or lower for 3 hours or longer, and then heated to a temperature exceeding 1400 ° C. (for example, 1500 ° C. or higher) and held for 3 hours or longer, and the molded product is sintered. To proceed. The holding temperature is preferably 1710 ° C. or lower, which is the melting point of _{the raw material SiO 2.}
The molded product is prepared for 3 hours or more in a temperature range of 1200 ° C. or higher, which is the temperature at which indium oxide powder in the sintering raw material powder is started to be sintered, and 1400 ° C. or lower, at which sintering proceeds by forming a composite oxide. Hold. As a result, oxygen gas can be uniformly permeated into the molded product while maintaining the gap channels between the sintered raw material powders during sintering. The upper limit of the holding time in the temperature range of 1200 ° C. or higher and 1400 ° C. or lower is not limited, but is preferably 15 hours or less from the viewpoint of work efficiency.
After that, by heating and holding the molded product to a temperature exceeding 1400 ° C., the sintering of the molded product proceeds uniformly.

(Machining process S04)
Next, the above-mentioned sintered body is subjected to machining such as lathe processing to obtain an oxide sputtering target of a predetermined size.

The oxide sputtering target of the present embodiment is produced by the above-mentioned steps.

According to the oxide sputtering target of the present embodiment having the above configuration, since it is composed of an oxide containing zirconium, silicon and indium as a metal component, the resistance value is high and it is visible. It is possible to form an oxide film having excellent light transmittance.
Since the average particle size of the composite oxide phase 13 containing In and Si is 10 μm or less, it is possible to suppress the occurrence of abnormal discharge due to the composite oxide phase when sputter film formation is performed at high output. , It becomes possible to stably perform sputter film formation.
Further, in the present embodiment, when the maximum particle size of the composite oxide phase 13 is limited to 50 μm or less, it is possible to further suppress the occurrence of abnormal discharge when sputter film formation is performed at high output.

Although the embodiments of the present invention have been described above, the present invention is not limited to this, and can be appropriately changed without departing from the technical idea of the invention.

The results of the confirmation experiment conducted to confirm the effectiveness of the present invention will be described below.

<Oxide sputtering target>
As raw material powders, indium oxide powder (In ₂ O ₃ powder: purity 99.9 mass% or more, average particle size 1 μm) and silicon oxide powder (SiO ₂ powder: purity 99.8 mass% or more, average particle size are shown in Table 1. (Description) and zirconium oxide powder (ZrO ₂ powder: purity 99.9 mass% or more, average particle size 2 μm) were prepared. Then, these were weighed so as to have the compounding ratio shown in Table 1. The purity of the zirconium oxide powder _{was calculated by measuring the contents of Fe 2} O ₃ , SiO ₂ , TiO ₂ and Na ₂ O, and subtracting the total content of these compounds from 100 mass%. The zirconium oxide powder contained up to 2.5 mass% of _{HfO 2 in} addition to the above components.

Zirconium oxide powder, raw material powders of indium oxide powder and silicon oxide powder, and zirconia balls having a diameter of 2 mm were charged into a basket mill device as a pulverization medium. Then, the raw material powder was wet pulverized and mixed for 60 minutes using a basket mill device. Water was used as the solvent.
Then, the obtained slurry was dried by the drying method shown in Table 1 to obtain a sintered raw material powder.

The obtained sintered raw material powder was filled in a molding die and pressed by CIP (cold hydrostatic press) to obtain a molded product. The CIP pressure was 200 MPa.
Here, in Examples 1 to 10 of the present invention and Comparative Examples 1 to 3 and 5, a rectangular flat plate-shaped molded body (165 mm × 298 mm) was used. In Examples 11 and 12 of the present invention and Comparative Example 4, a cylindrical molded body (outer diameter D: 205 mm, inner diameter d: 165 mm, height L: 200 mm) was used.

Then, the obtained molded product was charged into a baking apparatus having an oxygen introduction function (internal volume of the apparatus 27,000 cm ³ ), heated while introducing oxygen, and sintered. At this time, the amount of oxygen introduced was 6 L / min. The rate of temperature rise was 120 ° C./h.
Further, when the temperature of the sintering was raised, it was held at a temperature of 1300 ° C. for 5 hours, and then held at 1550 ° C. for 10 hours for main firing to obtain a sintered body.

The sintered body obtained as described above is machined, and in Examples 1 to 10 of the present invention and Comparative Examples 1 to 3 and 5, a rectangular flat plate type sputtering target having a size of 126 mm × 178 mm × thickness 6 mm is used. Got
Further, in Examples 11 and 12 of the present invention and Comparative Example 4, a cylindrical sputtering target having an outer diameter of D: 155 mm, an inner diameter of d: 135 mm, and a height of L: 150 mm was obtained.

The obtained oxide sputtering target was evaluated for the following items. The evaluation results are shown in Table 1.

(Metal component composition)
A sample was cut out from the produced oxide sputtering target, pulverized, and pretreated with an acid. Next, the metal components of Zr, Si, and In were quantitatively analyzed by ICP-AES, and the content of the metal components was calculated from the obtained results. As a result, the target composition shown in Table 1 was obtained.
In "blending composition" and "target composition" in Table 1, the amounts of Zr, Si, and In are described with the total amount of Zr, Si, and In as 100%.

(Sintered body particle size)
When the produced oxide sputtering target has a rectangular flat plate shape, as shown in FIG. 3, the intersection (1) where the diagonal lines intersect and the corner portions (2), (3), (4) on each diagonal line. , (5), samples were taken from the five points. The corners (2), (3), (4), and (5) were set within a range of 10% or less of the diagonal total length from the corner to the inside.
Further, when the produced oxide sputtering target has a cylindrical shape, as shown in FIG. 4, at each of both end portions A and B in the axis O direction and the center portion C, the intervals are 90 ° in the circumferential direction (). Samples were taken from four points (1), (2), (3), and (4). Therefore, samples were taken from a total of 12 points.
These samples were polished by wet polishing. Next, a COMPO image (reflected electron composition image) at a magnification of 3000 times (30 μm × 40 μm) was taken using an electron probe microanalyzer (EPMA) device. Image processing was performed on the captured image, the average particle size and the maximum particle size of the crystal grains of _{the composite oxide phase (In 2} Si ₂ O _{7 phase) were calculated, and the average value was calculated.}
The particle size here denotes the equivalent circle diameter (D as the particle diameter area S = πD ^2/4 of the sintered body), the average particle diameter is the number average circle equivalent diameter of crystal grains.

(Number of abnormal discharges)
The obtained oxide sputtering target was soldered to a backing plate or a backing tube using In solder, and mounted on a magnetron sputtering apparatus. Then, in the magnetron sputtering apparatus, Ar gas was introduced as a sputtering gas at a flow rate of 47 sccm, O ₂ gas was introduced at a flow rate of 3 sccm, and the pressure was set to 0.67 Pa. The input power was set to 5 W / cm ² and sputtering was performed for 1 hour. The number of abnormal discharges was measured by the arc count function provided in the DC power supply.
In this embodiment, RPG-50 (manufactured by mks) was used as the power supply device.

In Comparative Examples 1 to 5 in which the slurry obtained by wet mixing with a basket mill device was dried on a hot plate, the average particle size of the composite oxide phase exceeded 10 μm, many abnormal discharges occurred, and the slurry was stable. Therefore, sputter film formation could not be performed. When dried using a hot plate, it takes time to dry, and silicon oxide powder (SiO ₂ powder) having a relatively small specific gravity is unevenly distributed, so that it is presumed that the composite oxide phase is coarsened in the sintered body.

On the other hand, in Examples 1 to 12 of the present invention in which the slurry obtained by wet mixing with a basket mill device was spray-dried, the average particle size of the composite oxide phase was 10 μm or less, and the slurry was sputtered. The occurrence of abnormal discharge during film formation was suppressed, and stable film formation was possible.
Further, in Examples 1, 3 to 5, 7 to 12 of the present invention in which the maximum particle size of the composite oxide phase was 50 μm or less, the number of abnormal discharges generated during sputter film formation was further reduced.

When dried by spray drying, it is dried in a short time, so it is presumed that the uneven distribution of silicon oxide powder with a relatively small specific gravity was suppressed and uniformly dispersed, and the coarsening of the composite oxide phase was suppressed in the sintered body. Will be done. Further, it is presumed that the maximum particle size of the composite oxide phase was suppressed by reducing the particle size of the silicon oxide powder.

From the above, according to the example of the present invention, oxide sputtering can suppress the occurrence of abnormal discharge even when sputtered film is formed at high output, and can stably carry out sputtered film formation with high production efficiency. It was confirmed that the target could be provided.

11 Zirconium oxide phase 12 Indium oxide phase 13 Composite oxide phase

Claims (4)

An oxide sputtering target composed of an oxide containing zirconium, silicon, and indium as a metal component.
An oxide sputtering target characterized in that the average particle size of the composite oxide phase containing In and Si is 10 μm or less. The oxide sputtering target according to claim 1, wherein the maximum particle size of the composite oxide phase is 50 μm or less. The oxide sputtering target according to claim 1 or 2, wherein the total metal component is 100 mass% and the Si content is 15 mass% or less. A method for producing an oxide sputtering target according to any one of claims 1 to 3, wherein the oxide sputtering target is produced.
It has a step of pulverizing and mixing zirconium oxide powder, silicon oxide powder and indium oxide powder to obtain a slurry, and a step of forming the sintered raw material powder by drying the obtained slurry by a spray-drying method. A method for producing an oxide sputtering target.

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