JP2021082760A - Deposition method and deposition apparatus - Google Patents
Deposition method and deposition apparatus Download PDFInfo
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- JP2021082760A JP2021082760A JP2019210514A JP2019210514A JP2021082760A JP 2021082760 A JP2021082760 A JP 2021082760A JP 2019210514 A JP2019210514 A JP 2019210514A JP 2019210514 A JP2019210514 A JP 2019210514A JP 2021082760 A JP2021082760 A JP 2021082760A
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- 238000000151 deposition Methods 0.000 title abstract description 11
- 230000008021 deposition Effects 0.000 title abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 45
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 35
- 229910052698 phosphorus Inorganic materials 0.000 claims description 17
- 239000011574 phosphorus Substances 0.000 claims description 17
- 239000012495 reaction gas Substances 0.000 claims description 13
- 238000005137 deposition process Methods 0.000 abstract 2
- 230000003252 repetitive effect Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 34
- 239000010453 quartz Substances 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000005755 formation reaction Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 18
- 239000007795 chemical reaction product Substances 0.000 description 14
- 239000005380 borophosphosilicate glass Substances 0.000 description 6
- 230000006837 decompression Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- Formation Of Insulating Films (AREA)
Abstract
Description
本発明は、半導体装置の製造工程における成膜方法と成膜装置に関する。 The present invention relates to a film forming method and a film forming apparatus in a manufacturing process of a semiconductor device.
半導体装置は、半導体基板上に種々の膜を積層し、所望の形状にパターニングすることを繰り返すことで製造される。半導体装置の製造工程の一つとして、減圧式化学気相成長装置を用いて、例えば層間絶縁膜としてリン、あるいはリンおよびボロンを含むシリコン酸化膜（ＰＳＧ膜あるいはＢＰＳＧ膜）を成膜する工程がある。 A semiconductor device is manufactured by repeatedly laminating various films on a semiconductor substrate and patterning them into a desired shape. As one of the manufacturing processes of a semiconductor device, for example, a step of forming a silicon oxide film (PSG film or BPSG film) containing phosphorus or phosphorus and boron as an interlayer insulating film using a vacuum chemical vapor deposition device is performed. is there.
ところで、この種の成膜装置の処理室内では半導体基板表面に所望の膜が堆積するだけでなく処理室内に不要な反応生成物も堆積し、パーティクル発生の原因となってしまう。パーティクルの発生は、半導体装置の製造において歩留まり低下を招き好ましくない。 By the way, in the processing chamber of this type of film forming apparatus, not only a desired film is deposited on the surface of the semiconductor substrate, but also unnecessary reaction products are deposited in the processing chamber, which causes particle generation. The generation of particles is not preferable because it causes a decrease in yield in the manufacture of semiconductor devices.
そこで、処理室の反応生成物を除去するクリーニングが必須となっている。一般的なクリーニング工程では、例えば特許文献１に記載されているように、ウエットクリーニング法やドライクリーニング法により処理室内に付着した反応生成物を除去した後、反応生成物のなくなった処理室内に薄く反応生成物を堆積させる、いわゆる空デポが行われている。この空デポは、処理室内に反応生成物が全く無いと、処理室内に反応生成物が付着している通常時の成膜条件と相違してしまい、所望の成膜を行うことができなくなるために行われている。 Therefore, cleaning to remove the reaction products in the treatment chamber is indispensable. In a general cleaning step, for example, as described in Patent Document 1, after removing the reaction product adhering to the treatment chamber by a wet cleaning method or a dry cleaning method, the reaction product is thinned in the treatment chamber where the reaction product has disappeared. So-called empty depots are used to deposit reaction products. If there is no reaction product in the treatment chamber, this empty depot will be different from the normal film formation conditions in which the reaction product is attached in the treatment chamber, and the desired film formation cannot be performed. It is done in.
ところで、リンのような蒸気圧の高い元素を含む膜を成膜する場合、処理室内に付着する反応生成物の堆積量と無関係にパーティクルが発生してしまう。図４は、半導体装置の製造工場の中で駆動する１台の成膜装置において、ＰＳＧ膜を繰り返し成膜したときの成膜回数に対して所定の面積の半導体基板上に発生したパーティクルの数をプロットしたグラフである。 By the way, when a film containing an element having a high vapor pressure such as phosphorus is formed, particles are generated regardless of the amount of the reaction product deposited in the treatment chamber. FIG. 4 shows the number of particles generated on a semiconductor substrate having a predetermined area with respect to the number of film formations when a PSG film is repeatedly formed in one film forming apparatus driven in a semiconductor device manufacturing factory. It is a graph plotting.
図４より、成膜回数が多くなるとパーティクルの数が増える場合が散見されるものの、成膜回数が多くなってもパーティクルの数が少ない場合や、逆に成膜回数が少ないにもかかわらずパーティクルの数が多い場合があり、成膜回数（反応生成物の堆積量）とパーティクルの数との間に関連性がないことがわかる。 From FIG. 4, although the number of particles may increase as the number of film formations increases, the number of particles may decrease even if the number of film formations increases, or conversely, the number of particles may increase even though the number of film formations is small. It can be seen that there is no relationship between the number of film formations (the amount of accumulation of reaction products) and the number of particles.
そのため、所定の成膜回数毎に処理室のクリーニングを行ったとしても、パーティクルの発生を抑えることができなかった。 Therefore, even if the processing chamber is cleaned every predetermined number of film formations, the generation of particles cannot be suppressed.
本発明はこのような実状に鑑み、リンを含む酸化膜を形成する場合に、パーティクルの発生の少ない成膜方法および成膜装置を提供することを目的とする。 In view of such an actual situation, it is an object of the present invention to provide a film forming method and a film forming apparatus in which particles are less likely to be generated when an oxide film containing phosphorus is formed.
上記目的を達成するため、本願請求項１に係る発明は、半導体基板を載置した成膜装置の処理室内に反応ガスを導入して、該反応ガスから生成される膜を前記半導体基板表面に堆積させる成膜方法において、前記処理室内に第１の半導体基板を載置し、該第１の半導体基板の表面に、減圧下でリンを含む酸化膜を成膜する第１の工程と、前記第１の半導体基板を前記処理室から取り出す第２の工程と、前記処理室内に第２の半導体基板を載置し、該第２の半導体基板の表面に、減圧下でリンを含む酸化膜を成膜する第３の工程と、を含み、前記第１の工程と前記第３の工程との間が、予め設定した時間を超えるとき、前記処理室に前記第２の半導体基板を載置せずに、減圧下でリンを含む酸化膜を成膜する追加工程を行った後、前記第３の工程を行い、前記第１の工程と前記第３の工程との間が、前記予め設定した時間に達していないとき、前記追加工程を行うことなく前記第３の工程を行うことを特徴とする。 In order to achieve the above object, in the invention according to claim 1 of the present application, a reaction gas is introduced into a processing chamber of a film forming apparatus on which a semiconductor substrate is placed, and a film generated from the reaction gas is formed on the surface of the semiconductor substrate. In the film forming method for depositing, the first step of placing a first semiconductor substrate in the processing chamber and forming an oxide film containing phosphorus on the surface of the first semiconductor substrate under reduced pressure, and the above-mentioned In the second step of taking out the first semiconductor substrate from the processing chamber, the second semiconductor substrate is placed in the processing chamber, and an oxide film containing phosphorus is formed on the surface of the second semiconductor substrate under reduced pressure. When the time between the first step and the third step, including the third step of forming a film, exceeds a preset time, the second semiconductor substrate is placed in the processing chamber. Instead, after performing an additional step of forming an oxide film containing phosphorus under reduced pressure, the third step is performed, and the interval between the first step and the third step is set in advance. When the time has not been reached, the third step is performed without performing the additional step.
本願請求項２に係る発明は、請求項１記載の成膜方法において、前記第２の工程後前記第３の工程まで、前記処理室を大気圧に維持することを特徴とする。
The invention according to
本願請求項３に係る発明は、請求項１または２いずれか記載の成膜方法において、前記第１の工程と前記第３の工程との間に前記処理室内で発生するパーティクルの数が許容範囲内となるように、前記時間を設定することを特徴とする。
In the invention according to claim 3 of the present application, in the film forming method according to any one of
本願請求項４に係る発明は、半導体基板を処理室に載置し、該処理室内に反応ガスを導入して、該反応ガスから生成される膜を前記半導体基板表面に堆積させる成膜装置において、減圧下でリンを含む酸化膜を成膜する手段と、該酸化膜の成膜工程を終了したときから経過する時間を計測する手段と、を備えていることを特徴とする。 The invention according to claim 4 of the present application is in a film forming apparatus in which a semiconductor substrate is placed in a processing chamber, a reaction gas is introduced into the processing chamber, and a film generated from the reaction gas is deposited on the surface of the semiconductor substrate. It is characterized by comprising means for forming an oxide film containing phosphorus under reduced pressure, and means for measuring the time elapsed from the completion of the film formation step of the oxide film.
本発明の成膜方法は、前回の成膜工程の後経過した時間から、パーティクルの増加が予想される場合のみ空デポを行う構成とするため、処理室内に不要な反応生成物を生成させる工程を少なくすることができる。その結果、処理室のクリーニングの回数を増やす必要はなく、成膜装置の稼働を停止させる頻度が増加することがなく好ましい。 Since the film forming method of the present invention has a configuration in which an empty depot is performed only when an increase in particles is expected from the time elapsed after the previous film forming step, a step of generating an unnecessary reaction product in the processing chamber. Can be reduced. As a result, it is not necessary to increase the number of cleanings of the processing chamber, and it is preferable that the frequency of stopping the operation of the film forming apparatus does not increase.
また本発明の成膜方法によれば、蒸気圧の高いリンの蒸発を抑えることでパーティクルの発生を抑えられ、歩留まり良く半導体装置を製造することが可能となる。 Further, according to the film forming method of the present invention, the generation of particles can be suppressed by suppressing the evaporation of phosphorus having a high vapor pressure, and a semiconductor device can be manufactured with a high yield.
さらに本発明の成膜方法は、成膜工程と次の成膜工程の間の時間により、追加工程を行うか否かを判断することができ、非常に簡便な方法である。そのため、本発明の成膜装置は、成膜工程の終了時から時間を計測するタイマーを備えるだけでよく、成膜装置のコストアップを招くことはない。 Further, the film forming method of the present invention is a very simple method because it can be determined whether or not to perform an additional step based on the time between the film forming step and the next film forming step. Therefore, the film forming apparatus of the present invention only needs to be provided with a timer for measuring the time from the end of the film forming process, and does not increase the cost of the film forming apparatus.
本発明の成膜方法は、繰り返し成膜を行う際、その処理室において行われた前回の成膜工程と今回の成膜工程との間の経過時間、換言すると処理室の成膜後の放置時間に応じて、予め設定した時間が経過している場合には空デポを行った後に成膜を行い、その時間が経過していない場合には空デポを行わず成膜を行うことで、パーティクルの発生を抑えるための空デポによる不要な反応生成物の堆積は必要最小限とするように構成している。また本発明の成膜装置は、その時間の経過を計測するための手段を備える構成としている。以下、詳細に説明する。 In the film formation method of the present invention, when repeated film formation is performed, the elapsed time between the previous film formation step and the current film formation step performed in the processing chamber, in other words, leaving the film formation in the treatment room after the film formation. Depending on the time, if the preset time has elapsed, the film is formed after the empty depot, and if the time has not passed, the film is formed without the empty depot. It is configured to minimize the accumulation of unnecessary reaction products by the empty depot to suppress the generation of particles. Further, the film forming apparatus of the present invention is configured to include means for measuring the passage of time. Hereinafter, a detailed description will be given.
本発明の第１の実施例について本発明の成膜装置を用いた成膜方法について説明する。図１は本実施例の成膜装置である減圧式化学気相成長装置を示す。一般的な減圧式化学気相成長装置同様、石英管１（処理室に相当）内に、石英ボート２に並べた半導体基板３を載置し、ガス供給装置４から所望のガスを石英管１内に導入するとともに、真空排気装置５により石英管１内を所望の圧力とし、さらにヒーター６により所望の温度として、半導体基板３表面に所望の膜を堆積させる。さらに本実施例の減圧式化学気相成長装置では、タイマー７を備えていることが一般的な減圧式化学気相成長装置と相違している。
A film forming method using the film forming apparatus of the present invention will be described with respect to the first embodiment of the present invention. FIG. 1 shows a decompression type chemical vapor deposition apparatus which is a film forming apparatus of this embodiment. Similar to a general decompression type chemical vapor phase growth device, a semiconductor substrate 3 arranged on a
次に、図１に示す減圧式化学気相成長装置を用いて、リンを含む酸化膜としてＰＳＧ膜を形成する方法について説明する。 Next, a method of forming a PSG film as a phosphorus-containing oxide film using the vacuum chemical vapor deposition apparatus shown in FIG. 1 will be described.
（１回目の成膜工程）
１回目の成膜工程は、パーティクルの発生の少ない工程とする。まずＮ２ガスが供給され大気圧となっている石英管１内に、石英ボート２に並べた複数の半導体基板３を載置する。その後、真空排気装置５を用いて石英管１内のガスを排気し、所定の圧力まで減圧する。石英管１はヒーター６により所望の温度に加熱されている。
(First film formation process)
The first film forming step is a step in which particles are less likely to be generated. First N 2 to the quartz tube 1 in which the gas is in the atmospheric pressure is supplied to place the plurality of semiconductor substrates 3 arranged in a
次にガス供給装置４からＮ２ガスとＯ２ガスを石英管１内に供給し、その後さらにＳｉＨ４ガスとＰＨ３ガスを石英管１内に供給する。石英管１内は、所望の圧力、温度に制御され、反応ガスが供給された状態となり、半導体基板３表面に反応ガスの熱分解により生成されるＰＳＧ膜が成長する（第１の工程に相当）。このとき石英管１の内壁にもＰＳＧ膜等の反応生成物が堆積する。 Next, the N 2 gas and the O 2 gas are supplied from the gas supply device 4 into the quartz tube 1, and then the SiH 4 gas and the PH 3 gas are further supplied into the quartz tube 1. The inside of the quartz tube 1 is controlled to a desired pressure and temperature, and the reaction gas is supplied, and a PSG film produced by thermal decomposition of the reaction gas grows on the surface of the semiconductor substrate 3 (corresponding to the first step). ). At this time, reaction products such as a PSG film are also deposited on the inner wall of the quartz tube 1.
所望の厚さのＰＳＧ膜が成長した後、ＳｉＨ４ガスとＰＨ３ガスの供給を停止し、次にＮ２ガスとＯ２ガスの供給を停止して、石英管１内から反応ガスを除去する。反応ガスの除去が終了した後、石英管１の減圧を停止し、石英管１内にＮ２ガスを供給して大気圧として、石英管１内から石英ボート２とともに半導体基板３を取り出す（第２の工程に相当）。
After the PSG film of the desired thickness has grown, the supply of SiH 4 gas and PH 3 gas is stopped, then the supply of N 2 gas and O 2 gas is stopped, and the reaction gas is removed from the inside of the quartz tube 1. To do. After the removal of the reaction gas is complete, the vacuum of the quartz tube 1 is stopped, by supplying N 2 gas to the quartz tube 1 as the atmospheric pressure, take out the semiconductor substrate 3 with a
このような成膜工程の中で、本実施例では、石英管１の真空引きを終了した時、換言すると石英管１を大気圧に戻す作業を開始した時から、タイマー７により時間の計測を開始する。 In such a film forming process, in this embodiment, the time is measured by the timer 7 from the time when the vacuuming of the quartz tube 1 is completed, in other words, the time when the work of returning the quartz tube 1 to the atmospheric pressure is started. Start.
半導体基板３を取り出した石英管１内に、再びＮ２ガスを供給し、真空排気装置５により減圧状態として、次の成膜工程を待つ。 The semiconductor substrate 3 in the quartz tube 1 was taken out, and the N 2 gas is supplied again, as a reduced pressure state by a vacuum evacuation device 5, and waits for the next deposition step.
（２回目の成膜工程）
２回目の成膜工程は、タイマー７によって計測した時間により実行する工程が異なる。実行する工程は次のように決める。
(Second film formation process)
The second film forming step differs depending on the time measured by the timer 7. The process to be executed is decided as follows.
図２は、１回目の成膜工程から２回目の成膜工程までの経過時間と、２回目の成膜工程の際に発生するパーティクルの数の関係を示すグラフである。図２に示す例では、１回目の成膜工程終了後、石英管１を４３０℃、２６．７Ｐａで放置し、経過時間ごとに２回目の成膜工程で発生したパーティクルの数を示している。また経過時間は、１回目の成膜工程で成膜後に石英管１を大気圧に戻す作業を開始した時から２回目の成膜工程で石英管１内に半導体基板３を載置し、大気圧から減圧を開始した時までの時間としている。 FIG. 2 is a graph showing the relationship between the elapsed time from the first film forming step to the second film forming step and the number of particles generated during the second film forming step. In the example shown in FIG. 2, after the completion of the first film forming step, the quartz tube 1 is left at 430 ° C. and 26.7 Pa, and the number of particles generated in the second film forming step is shown for each elapsed time. .. In addition, the elapsed time is large because the semiconductor substrate 3 is placed in the quartz tube 1 in the second film forming step from the time when the work of returning the quartz tube 1 to the atmospheric pressure after the film forming in the first film forming step is started. It is the time from the atmospheric pressure to the start of decompression.
図２に示すグラフの縦軸のスケールは、図４で説明したグラフの縦軸のスケールと同じとし、点線は半導体装置の製造工程において許容可能なパーティクルの数を示している。図２に示すように経過時間が短いときには、パーティクルの発生が少なく、経過時間が長くなるとパーティクルの発生が多くなっている。 The scale of the vertical axis of the graph shown in FIG. 2 is the same as the scale of the vertical axis of the graph described with reference to FIG. 4, and the dotted line indicates the number of particles that can be tolerated in the manufacturing process of the semiconductor device. As shown in FIG. 2, when the elapsed time is short, the generation of particles is small, and when the elapsed time is long, the generation of particles is large.
そこで、例えば経過時間が２０時間以内のときと、経過時間が２０時間を超えるときとで２回目の成膜工程として実行する工程を変えることとする。 Therefore, for example, the step to be executed as the second film forming step is changed depending on whether the elapsed time is within 20 hours or the elapsed time exceeds 20 hours.
（経過時間が２０時間以内のとき）
経過時間が２０時間以内のときには、図２から明らかなように発生するパーティクルの数は非常に少ない。そこで、２回目の成膜工程は、１回目の成膜工程と同じ工程を繰り返すことで成膜工程を終了する（追加工程のない第３の工程に相当）。
(When the elapsed time is within 20 hours)
When the elapsed time is within 20 hours, the number of particles generated is very small, as is clear from FIG. Therefore, in the second film forming step, the film forming step is completed by repeating the same step as the first film forming step (corresponding to the third step without an additional step).
その結果、２回目の成膜工程において、パーティクルの発生が少ない状態で成膜が完了する。 As a result, in the second film forming step, the film forming is completed in a state where the generation of particles is small.
（経過時間が２０時間を超えるとき）
一方経過時間が２０時間を超えるときには、発生するパーティクルの数が多くなる傾向にある。そのためパーティクルの発生を抑える工程を追加する。
(When the elapsed time exceeds 20 hours)
On the other hand, when the elapsed time exceeds 20 hours, the number of generated particles tends to increase. Therefore, a process of suppressing the generation of particles is added.
パーティクルは、経過時間が長くなるほど発生が多くなることから、パーティクルの発生は減圧下に放置されているＰＧＳ膜の表面から蒸気圧の高いリンが蒸発することに起因していると考えられる。そこで、石英管１（処理室）の表面を新たなＰＳＧ膜で被覆する工程（追加工程に相当）を行う。この工程は、いわゆる空デポ工程となる。 Since the number of particles generated increases as the elapsed time increases, it is considered that the generation of particles is caused by the evaporation of phosphorus having a high vapor pressure from the surface of the PGS film left under reduced pressure. Therefore, a step (corresponding to an additional step) of coating the surface of the quartz tube 1 (treatment chamber) with a new PSG film is performed. This process is a so-called empty depot process.
その後、速やかに２回目の成膜工程として、１回目の成膜工程と同じ工程を繰り返し、成膜工程を終了する（追加工程を行う第３の工程に相当）。この２回目の成膜工程は、空デポ後の経過時間がわずかとなることから、パーティクルの発生を大幅に抑えることが可能となる。 After that, as the second film forming step, the same process as the first film forming step is promptly repeated to end the film forming step (corresponding to the third step of performing the additional step). In this second film forming step, since the elapsed time after the empty depot is short, it is possible to significantly suppress the generation of particles.
図３に本実施例の成膜方法と上述の従来の成膜方法とで発生するパーティクルの数を比較したグラフを示す。本実施例の成膜方法は、従来の成膜方法と比較して発生するパーティクルの数を低く抑えられている。 FIG. 3 shows a graph comparing the number of particles generated by the film forming method of this embodiment and the above-mentioned conventional film forming method. In the film forming method of this embodiment, the number of particles generated is suppressed to be low as compared with the conventional film forming method.
以上のように、経過時間により実行する工程を変えることで、不要な空デポを行わずに発生するパーティクルの数を抑えることが可能となる。なお、上記実施例では、経過時間を２０時間として処理工程を変更しているが、図２から明らかなように経過時間が２０時間を超える場合であってもパーティクルの発生を抑えることができる。そのため、実行する工程を変えるための経過時間の設定は、製造する半導体装置において許容されるパーティクルの数を考慮し、適宜設定すればよい。 As described above, by changing the process to be executed depending on the elapsed time, it is possible to suppress the number of particles generated without performing unnecessary empty depot. In the above embodiment, the processing process is changed with the elapsed time set to 20 hours, but as is clear from FIG. 2, the generation of particles can be suppressed even when the elapsed time exceeds 20 hours. Therefore, the elapsed time for changing the process to be executed may be appropriately set in consideration of the number of particles allowed in the semiconductor device to be manufactured.
次に第２の実施例について説明する。上記第１の実施例では、１回目の成膜工程が終了した後、石英管１を大気圧に戻して半導体基板３を取り出した後、次の成膜工程まで石英管１を減圧状態としていた。ところでパーティクルの発生が、蒸気圧の高いリンの蒸発に起因すると考えると、減圧状態に放置することはパーティクルをより発生しやすくさせてしまうことになる。そこで、１回目の成膜工程を終了し、半導体基板３を取り出した後、石英管１内にＮ２ガスを供給し、大気圧の状態で維持して次の成膜工程を待つことで、パーティクルの発生を抑えることができる。 Next, a second embodiment will be described. In the first embodiment, after the first film forming step is completed, the quartz tube 1 is returned to atmospheric pressure to take out the semiconductor substrate 3, and then the quartz tube 1 is in a reduced pressure state until the next film forming step. .. By the way, considering that the generation of particles is caused by the evaporation of phosphorus having a high vapor pressure, leaving the particles in a reduced pressure state makes it easier for the particles to be generated. Therefore, to exit the first deposition step, after removal of the semiconductor substrate 3, and the N 2 gas is supplied to the quartz tube 1, and maintained in a state of atmospheric pressure to wait for the next deposition step, It is possible to suppress the generation of particles.
本実施例においても、２回目の成膜工程で実行する工程を変えるための経過時間の設定は、許容されるパーティクルの発生数を考慮し、適宜設定すればよい。例えば、大気圧の状態を維持して次の成膜工程を待つことになるため、上記第１の実施例と比較して同じ時間経過した場合でもパーティクルの発生は少なくなる可能性がある。あるいは許容範囲を超えるパーティクルが発生するまでの経過時間が長くなる可能性がある。その場合は、実行する工程を変えるための経過時間を２０時間より長く設定することが可能となる。 Also in this embodiment, the elapsed time for changing the step to be executed in the second film forming step may be appropriately set in consideration of the allowable number of particles to be generated. For example, since the state of atmospheric pressure is maintained and the next film forming step is waited for, the generation of particles may be reduced even when the same time elapses as compared with the first embodiment. Alternatively, the elapsed time until particles exceeding the permissible range are generated may be long. In that case, the elapsed time for changing the process to be executed can be set longer than 20 hours.
次に第３の実施例について説明する。上記第１の実施例および第２の実施例では、ＰＳＧ膜を形成する場合について説明したが、蒸気圧の高いリンを含む膜としてＢＰＳＧ膜であっても同様である。即ち、ＢＰＳＧ膜を形成するため、反応ガスとして、ＴＥＯＳ（テトラエトキシシラン）、ＰＨ３（ホスフィン）、ＴＭＢ（トリメチルボレート）を供給することで、半導体基板３表面に反応ガスの熱分解により生成されるＢＰＳＧ膜を成長させることができる。このとき石英管１の内壁にもＢＰＳＧ膜が反応生成物として堆積する。 Next, a third embodiment will be described. In the first and second examples described above, the case of forming a PSG film has been described, but the same applies to a BPSG film as a film containing phosphorus having a high vapor pressure. That is, in order to form a BPSG film, TEOS (tetraethoxysilane), PH 3 (phosphine), and TMB (trimethylborate) are supplied as reaction gases, and the reaction gas is generated by thermal decomposition on the surface of the semiconductor substrate 3. BPSG film can be grown. At this time, the BPSG film is also deposited as a reaction product on the inner wall of the quartz tube 1.
ＢＰＳＧ膜の場合も、タイマー７により時間を計測し、経過時間に応じて２回目の成膜工程として実行する工程を変えれば良い。この工程を変えるための経過時間の設定は、許容できるパーティクルの発生数を考慮し、適宜設定すればよい。 Also in the case of the BPSG film, the time may be measured by the timer 7 and the step to be executed as the second film forming step may be changed according to the elapsed time. The elapsed time for changing this process may be appropriately set in consideration of the allowable number of particles generated.
以上本発明の実施例について説明したが、本発明は上記実施例に限定されるものでないことは言うまでもない。上記実施例は、処理室として横型の石英管の場合を例にとり説明したが、処理室がこれに限定されるものではない。 Although the examples of the present invention have been described above, it goes without saying that the present invention is not limited to the above examples. In the above embodiment, the case where the treatment chamber is a horizontal quartz tube has been described as an example, but the treatment chamber is not limited to this.
また経過時間について、１回目の成膜工程で成膜後に石英管１を大気圧に戻す作業を開始した時から２回目の成膜工程で石英管１内に半導体基板３を配置し、大気圧から減圧を開始する時までの時間として説明したが、これに限らず、所定の始点から所定の終点までを適宜設定し、その経過時間に応じたパーティクルの発生数を確認すれば、何ら問題はない。 Regarding the elapsed time, the semiconductor substrate 3 is placed in the quartz tube 1 in the second film forming step from the time when the work of returning the quartz tube 1 to the atmospheric pressure after the film forming in the first film forming step is started, and the atmospheric pressure is increased. Although it was explained as the time from to the start of decompression, it is not limited to this, and if you set appropriately from the predetermined start point to the predetermined end point and check the number of particles generated according to the elapsed time, there is no problem. Absent.
それにともないタイマーの設定も適宜設定すればよい。上記実施例のように、成膜装置のいずれかのシーケンスに連動して自動的に時間の計測を開始する構成としたり、手動で時間の計測を開始する構成としてもよい。 Along with that, the timer settings may be set as appropriate. As in the above embodiment, the time measurement may be automatically started in conjunction with any sequence of the film forming apparatus, or the time measurement may be started manually.
１： 石英管、２：石英ボート、３：半導体基板、４：ガス供給装置、５：真空排気装置、６：ヒーター、７：タイマー 1: Quartz tube 2: Quartz boat 3: Semiconductor substrate 4: Gas supply device 5: Vacuum exhaust device, 6: Heater, 7: Timer
Claims (4)
前記処理室内に第１の半導体基板を載置し、該第１の半導体基板の表面に、減圧下でリンを含む酸化膜を成膜する第１の工程と、
前記第１の半導体基板を前記処理室から取り出す第２の工程と、
前記処理室内に第２の半導体基板を載置し、該第２の半導体基板の表面に、減圧下でリンを含む酸化膜を成膜する第３の工程と、を含み、
前記第１の工程と前記第３の工程との間が、予め設定した時間を超えるとき、前記処理室に前記第２の半導体基板を載置せずに、減圧下でリンを含む酸化膜を成膜する追加工程を行った後、前記第３の工程を行い、
前記第１の工程と前記第３の工程との間が、前記予め設定した時間に達していないとき、前記追加工程を行うことなく前記第３の工程を行うことを特徴とする成膜方法。 In a film forming method in which a reaction gas is introduced into a processing chamber of a film forming apparatus on which a semiconductor substrate is placed and a film generated from the reaction gas is deposited on the surface of the semiconductor substrate.
A first step of placing a first semiconductor substrate in the processing chamber and forming an oxide film containing phosphorus on the surface of the first semiconductor substrate under reduced pressure.
A second step of taking out the first semiconductor substrate from the processing chamber, and
A third step of placing a second semiconductor substrate in the processing chamber and forming an oxide film containing phosphorus on the surface of the second semiconductor substrate under reduced pressure is included.
When the time between the first step and the third step exceeds a preset time, the oxide film containing phosphorus is formed under reduced pressure without placing the second semiconductor substrate in the processing chamber. After performing the additional step of forming the film, the third step is performed.
A film forming method characterized in that when the time between the first step and the third step does not reach the preset time, the third step is performed without performing the additional step.
前記第２の工程後前記第３の工程まで、前記処理室を大気圧に維持することを特徴とする成膜方法。 In the film forming method according to claim 1,
A film forming method characterized by maintaining the processing chamber at atmospheric pressure after the second step until the third step.
減圧下でリンを含む酸化膜を成膜する手段と、
該酸化膜の成膜工程を終了したときから経過する時間を計測する手段と、を備えていることを特徴とする成膜装置。 In a film forming apparatus in which a semiconductor substrate is placed in a processing chamber, a reaction gas is introduced into the processing chamber, and a film generated from the reaction gas is deposited on the surface of the semiconductor substrate.
A means for forming an oxide film containing phosphorus under reduced pressure,
A film forming apparatus comprising: means for measuring the time elapsed from the completion of the film forming process of the oxide film.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513406A (en) * | 1991-06-28 | 1993-01-22 | Ricoh Co Ltd | Bpsg reflow film for lsi element |
| JPH11150183A (en) * | 1997-11-19 | 1999-06-02 | Sony Corp | Semiconductor device and its manufacture |
| JP2006190741A (en) * | 2005-01-05 | 2006-07-20 | Seiko Epson Corp | Depositing device and method and device for cleaning the same |
| JP2007242982A (en) * | 2006-03-10 | 2007-09-20 | Renesas Technology Corp | Manufacturing method of semiconductor device, semiconductor manufacturing apparatus and semiconductor-manufacturing system |
| JP2015154025A (en) * | 2014-02-19 | 2015-08-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and operating method thereof |
-
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513406A (en) * | 1991-06-28 | 1993-01-22 | Ricoh Co Ltd | Bpsg reflow film for lsi element |
| JPH11150183A (en) * | 1997-11-19 | 1999-06-02 | Sony Corp | Semiconductor device and its manufacture |
| JP2006190741A (en) * | 2005-01-05 | 2006-07-20 | Seiko Epson Corp | Depositing device and method and device for cleaning the same |
| JP2007242982A (en) * | 2006-03-10 | 2007-09-20 | Renesas Technology Corp | Manufacturing method of semiconductor device, semiconductor manufacturing apparatus and semiconductor-manufacturing system |
| JP2015154025A (en) * | 2014-02-19 | 2015-08-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and operating method thereof |
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