JP2021064791A - スピン軌道トルクベースのスイッチング素子及びその製造方法 - Google Patents
スピン軌道トルクベースのスイッチング素子及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 85
- NWJUARNXABNMDW-UHFFFAOYSA-N tungsten vanadium Chemical compound [W]=[V] NWJUARNXABNMDW-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910000756 V alloy Inorganic materials 0.000 claims abstract description 57
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010937 tungsten Substances 0.000 claims abstract description 27
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 27
- 230000005415 magnetization Effects 0.000 claims abstract description 24
- 230000001747 exhibiting effect Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 38
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052720 vanadium Inorganic materials 0.000 claims description 25
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 238000005477 sputtering target Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract description 4
- 238000005275 alloying Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 77
- 238000005259 measurement Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 11
- 239000000395 magnesium oxide Substances 0.000 description 11
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000014509 gene expression Effects 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 229910019236 CoFeB Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 238000000691 measurement method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910000521 B alloy Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- ZDZZPLGHBXACDA-UHFFFAOYSA-N [B].[Fe].[Co] Chemical compound [B].[Fe].[Co] ZDZZPLGHBXACDA-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 2
- 229940075624 ytterbium oxide Drugs 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
Description
本出願は、2019年10月16日付の韓国特許出願第10−2019−0128664号及び2020年01月31日付の韓国特許出願第10−2020−0011887号に基づく優先権の利益を主張し、当該韓国特許出願の文献に開示された全ての内容は本明細書の一部として組み込まれる。
Claims (11)
- 垂直磁気異方性(perpendicular magnetic anisotropy、PMA)の特性が発現されるタングステン−バナジウム(tungsten−vanadium)合金薄膜を備えるスピントルク発生層と、
前記スピントルク発生層上に形成される磁化自由層とを含む、スピン軌道トルクベースのスイッチング素子。 - 前記スピントルク発生層は、
タングステン薄膜、及び前記タングステン薄膜と磁化自由層との間に形成される前記タングステン−バナジウム合金薄膜を含む、請求項1に記載のスピン軌道トルクベースのスイッチング素子。 - 250℃〜400℃の温度範囲内での熱処理を通じて形成される、請求項1に記載のスピン軌道トルクベースのスイッチング素子。
- 前記タングステン−バナジウム合金薄膜は、
前記熱処理の温度に応じて予め設定された組成比率で形成される、請求項3に記載のスピン軌道トルクベースのスイッチング素子。 - 前記タングステン−バナジウム合金薄膜は、
前記熱処理の温度が250℃である場合、バナジウムの組成比率(x)(ここで、xは実数)が20at%≦x≦90at%であり、
前記熱処理の温度が300℃である場合、前記バナジウムの組成比率(x)が0at%<x≦70at%であり、
前記熱処理の温度が400℃である場合、前記バナジウムの組成比率(x)が0at%<x≦30at%である、請求項4に記載のスピン軌道トルクベースのスイッチング素子。 - 垂直磁気異方性(perpendicular magnetic anisotropy、PMA)の特性が発現されるタングステン−バナジウム(tungsten−vanadium)合金薄膜を備えるスピントルク発生層を形成するステップと、
前記スピントルク発生層上に磁化自由層を形成するステップとを含む、スピン軌道トルクベースのスイッチング素子の製造方法。 - 前記スピントルク発生層を形成するステップは、
タングステン薄膜を形成するステップと、
前記タングステン薄膜上に前記タングステン−バナジウム合金薄膜を形成するステップとをさらに含む、請求項6に記載のスピン軌道トルクベースのスイッチング素子の製造方法。 - 前記合金薄膜を形成するステップは、
タングステンスパッタリングターゲット及びバナジウムターゲットを用いた同時蒸着法を通じて前記タングステン−バナジウム合金薄膜を形成する、請求項7に記載のスピン軌道トルクベースのスイッチング素子の製造方法。 - 250℃〜400℃の温度範囲内で熱処理するステップをさらに含む、請求項8に記載のスピン軌道トルクベースのスイッチング素子の製造方法。
- 前記合金薄膜を形成するステップは、
前記熱処理の温度に応じて予め設定された組成比率で前記タングステン−バナジウム合金薄膜を形成する、請求項9に記載のスピン軌道トルクベースのスイッチング素子の製造方法。 - 前記合金薄膜を形成するステップは、
前記熱処理の温度が250℃である場合、バナジウムの組成比率(x)(ここで、xは実数)が20at%≦x≦90at%である前記タングステン−バナジウム合金薄膜を形成し、
前記熱処理の温度が300℃である場合、前記バナジウムの組成比率(x)が0at%<x≦70at%である前記タングステン−バナジウム合金薄膜を形成し、
前記熱処理の温度が400℃である場合、前記バナジウムの組成比率(x)が0at%<x≦30at%である前記タングステン−バナジウム合金薄膜を形成する、請求項10に記載のスピン軌道トルクベースのスイッチング素子の製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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KR10-2019-0128664 | 2019-10-16 | ||
KR20190128664 | 2019-10-16 | ||
KR10-2020-0011887 | 2020-01-31 | ||
KR1020200011887A KR102298399B1 (ko) | 2019-10-16 | 2020-01-31 | 스핀궤도토크 기반의 스위칭 소자 및 그 제조방법 |
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US20220165943A1 (en) * | 2020-11-20 | 2022-05-26 | Korea University Research And Business Foundation | Spin-orbit torque (sot)-based magnetic tunnel junction and method of fabricating the same |
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