JP2021064760A - Workpiece, manufacturing method of workpiece, and processing method of workpiece - Google Patents

Abstract

To dramatically reduce the number of wafers consumed in test processing.SOLUTION: A manufacturing method of a workpiece by dividing a wafer in which a plurality of planned division lines intersecting each other are set on the surface and a device is formed in each region divided by the planned division lines to manufacture a plurality of workpieces includes a block forming step of dividing the wafer along some of the plurality of planned division lines to form a plurality of blocks each of which includes the plurality of devices and the raw planned division lines between the devices, a simulated wafer preparation step of preparing a simulated wafer having an opening for accommodating the block and exhibiting the size and shape of the wafer, a workpiece forming step of forming a workpiece by performing a block accommodating step of accommodating the block in the opening of the simulated wafer and a protective member disposing step of disposing a protective member in the simulated wafer so as to close the opening, and placing the simulated wafer and the block together via the protective member.SELECTED DRAWING: Figure 4

Description

The present invention relates to a work piece to be machined by a processing device such as a cutting device, a laser machining device, and a grinding device capable of processing a wafer made of a material such as a semiconductor, and a method for manufacturing the work piece to manufacture the work piece. The present invention relates to a processing method for a work piece for processing the work piece.

In the manufacturing process of device chips used in electronic devices such as mobile phones and personal computers, first, a plurality of intersecting planned division lines (streets) are set on the surface of a wafer made of a material such as a semiconductor. Then, devices such as ICs (Integrated Circuits) and LSIs (Large-Scale Integration) are formed in each area partitioned by the planned division line.

Next, the wafer is ground from the back surface side with a grinding device to thin the wafer to the thickness specified for the device chip. Then, when the wafer is divided along the planned division line, individual device chips are formed. For dividing the wafer, for example, a cutting device provided with an annular cutting blade or a laser processing device capable of irradiating the wafer with a laser beam to laser-process the wafer is used.

As another method for manufacturing the device chip, a groove having a depth corresponding to the specified thickness of the device chip is formed on the front surface of the wafer along the planned division line, and then the wafer is ground from the back surface side. A method of thinning until the bottom surface of the groove is removed is known (see, for example, Patent Document 1).

By the way, in order to change the specifications of the device chip, the material of the wafer may be changed, or the material, thickness, pattern shape, etc. of each film constituting the device may be changed. In addition, the size of the device chip to be manufactured may be changed. In these cases, even if the wafer is machined under the machining conditions previously implemented in the machining apparatus such as a cutting apparatus, a laser processing apparatus, or a grinding apparatus, the desired machining result may not always be obtained. Therefore, test processing is performed to verify whether or not the wafer is appropriately processed, and the processing result is evaluated.

When the desired machining result cannot be obtained under the existing machining conditions, the test machining is repeatedly carried out under various machining conditions in order to pursue the machining condition in which the desired machining result can be obtained. Further, even when the specifications of the device chip are not changed, test machining for pursuing the optimum machining conditions is repeatedly performed in order to realize more appropriate and highly efficient machining.

Japanese Unexamined Patent Publication No. 11-40520

When the device is formed on the surface of the wafer, it is necessary to repeatedly carry out the film forming process and the patterning step on the wafer in order to laminate a large number of films constituting the device. Then, in order to manufacture a high-performance device chip, high-quality members and high-performance equipment are used in each process. Therefore, in order to manufacture a wafer in which a plurality of devices are formed, extremely large financial cost and time cost are required. In the test processing, high-value wafers in which a plurality of devices are formed are consumed one after another, so that the loss cannot be ignored.

Further, it is difficult to prepare a sufficient number of wafers to be subjected to test processing at an early stage in the prototype stage of a device chip, especially when changing the specifications of the device chip. If a sufficient number of wafers are not available, test machining cannot be performed sufficiently and appropriate machining conditions cannot be pursued. On the other hand, in order to quickly supply the device chip with changed specifications to the market, it is not possible to wait for test processing until a sufficient number of wafers are available.

The present invention has been made in view of the above problems, and an object of the present invention is a work piece, a work piece manufacturing method, and a work piece that can dramatically reduce the number of wafers consumed in test processing and the like. It is to provide the processing method of the processed body.

According to one aspect of the present invention, a plurality of wafers to be processed are manufactured by dividing a wafer in which a plurality of scheduled division lines intersecting each other are set on the surface and a device is formed in each region partitioned by the planned division lines. In the method for manufacturing a workpiece to be processed, the wafer is divided along a part of the planned division lines included in the plurality of scheduled division lines, and the plurality of the devices and the unprocessed division between the devices are performed. A block forming step of forming a plurality of blocks each having a planned line, a simulated wafer preparation step of preparing a simulated wafer having an opening for accommodating the block and exhibiting the size and shape of the wafer, and a simulated wafer preparation step. A block accommodating step of accommodating the block in the opening and a protective member disposing step of disposing a protective member in the simulated wafer so as to close the opening are carried out, and the simulated wafer and the block are attached to the protective member. Provided is a method for producing a workpiece, which comprises a process of forming a workpiece to be integrally formed via a workpiece.

Preferably, the material of the simulated wafer is the same material as the material of the block.

Also, preferably, in the work piece forming step, the protective member is disposed on either the front surface or the back surface of the block including the device.

Further, according to another aspect of the present invention, it is a processing method of a work piece for processing the work piece manufactured by the work piece manufacturing method, and is a holding unit having a holding surface capable of holding the waiha. A processing body holding step of holding the work piece on the holding surface of the holding unit of the processing apparatus provided with a processing unit capable of processing the wafer held by the holding unit, and a processing unit holding unit of the holding unit. Provided is a method for processing an object to be processed, which comprises a processing step of processing the object to be processed held by the holding surface by the processing unit.

According to still another aspect of the present invention, a simulated wafer having a plurality of devices on the surface and a division schedule line set between the devices, a simulated wafer having an opening for accommodating the blocks, and the simulated wafer. A work piece is provided that includes a protective member that integrates the block housed in the opening and the simulated wafer.

Preferably, the material of the simulated wafer is the same material as the material of the block.

Also, preferably, the protective member is disposed on either the front surface or the back surface of the block.

According to still another aspect of the present invention, there is a processing method of the workpiece to be processed, the holding unit having a holding surface capable of holding the simulated wafer and the wafer having a size and shape. A processing body holding step of holding the work piece on the holding surface of the holding unit of the processing apparatus including a processing unit capable of processing the wafer held by the holding unit, and the holding of the holding unit. Provided is a processing method for a work piece, which comprises a processing step of processing the work piece held on a surface by the work piece.

When a test machining is performed on a wafer and the machining result is evaluated, the state of the region where the device is formed and the region where the scheduled division line is set is the main target of the evaluation. In the work piece, the work piece manufacturing method, and the work piece processing method according to one aspect of the present invention, the simulated wafer and the block housed in the opening of the simulated wafer are integrally formed via a protective member. Become. Here, the block constituting the manufactured workpiece includes a planned division line and a plurality of devices. Therefore, the workpiece can be used for test processing instead of the wafer.

Therefore, the workpiece has a value equivalent to that of a high-value wafer in the scene where the test processing is performed. On the other hand, since the process of manufacturing the workpiece does not require expensive members or complicated processes, the cost is extremely low as compared with the process of manufacturing the wafer, and the time required for the process is also extremely short. Further, since the workpiece can be manufactured as many as the number of blocks cut out from the wafer, it can be manufactured in large quantities from a small number of wafers. In other words, using the workpiece for test machining can dramatically reduce the number of wafers consumed and reduce costs.

Here, it is conceivable to carry out test processing using only the block cut out from the wafer, but since the shape and size of the block and the wafer are significantly different, processing can be performed even if both are processed under the same conditions. The result will be quite different. Moreover, the block alone cannot be properly held in the holding unit of the processing apparatus. In this case, the test processing cannot be performed properly, and the result of the test processing cannot be evaluated properly.

On the other hand, in the work piece, since the simulated wafer is arranged around the block, the work piece is appropriately held by the holding unit of the processing apparatus. Then, the block is processed together with the simulated wafer in the same manner as when the wafer is processed. That is, the block and the simulated wafer are processed in the same manner as the wafer, and the same processing result can be obtained. Therefore, even if the workpiece is used for test machining instead of the wafer, the machining result can be appropriately evaluated.

Therefore, according to one aspect of the present invention, there is provided a work piece, a work piece manufacturing method, and a work piece processing method that can dramatically reduce the number of wafers consumed in test processing and the like.

It is a perspective view which shows typically the block formation process. FIG. 2A is a perspective view schematically showing a wafer after the block forming step is performed, and FIG. 2B is a perspective view schematically showing a block. It is a perspective view which shows an example of the simulated wafer preparation process schematically. It is a perspective view which shows an example of the process of forming a work piece schematically. It is a perspective view which shows typically the process of holding a work piece. It is a perspective view which shows typically an example of the state of processing a work piece. It is a perspective view which shows another example of the state of processing a work piece schematically. It is a perspective view which shows another example of the process of forming a work piece schematically. It is a perspective view which shows another example of the workpiece schematically. It is a perspective view which shows the other example of the state of processing a work piece schematically. FIG. 11A is a flowchart showing the flow of each step of the work piece manufacturing method, and FIG. 11B is a flowchart showing the flow of each step in the work piece forming step.

An embodiment according to one aspect of the present invention will be described with reference to the accompanying drawings. First, a wafer as a material for a block used for a work piece according to the present embodiment will be described. FIG. 1 includes a perspective view schematically showing the wafer 1.

The wafer 1 is, for example, a material such as Si (silicon), SiC (silicon carbide), GaN (gallium nitride), GaAs (gallium arsenide), or other semiconductor, or a material such as sapphire, glass, or quartz. It is a substantially disk-shaped substrate made of. The glass is, for example, alkaline glass, non-alkali glass, soda-lime glass, lead glass, borosilicate glass, quartz glass and the like. However, the shape of the wafer 1 is not limited to the disc shape.

On the surface 1a of the wafer 1, a plurality of scheduled division lines 3 intersecting with each other are set. Then, a device 5 such as an IC or an LSI is formed in each region of the surface 1a of the wafer 1 partitioned by the scheduled division line 3. When the wafer 1 on which the device 5 is formed is ground from the back surface side to be thinned to a predetermined thickness, and then the wafer 1 is divided along the scheduled division line 3, individual device chips having a predetermined thickness are obtained. .. The manufactured device chip is mounted on an electronic device and used.

In recent years, there has been a remarkable demand for improving the performance of electronic devices on which device chips are mounted, and new device chips are being developed every day to meet these demands. Here, when manufacturing a new device chip, it is not always appropriate to carry out the step of grinding the wafer 1 on which the plurality of devices 5 are formed and the step of dividing the wafer 1 as before. Therefore, when the specifications of the device 5 formed on the wafer 1 are changed, it is necessary to test-process the wafer 1 and evaluate the processing result.

However, in the prototype stage of the device chip, the wafer 1 on which the device 5 whose specifications have been changed is formed is extremely valuable, and it is difficult to secure a sufficient number of wafers 1 for performing test processing.

Further, when manufacturing a device chip, members as raw materials such as a conductive film and an insulating film constituting the device 5 are required, and when patterning these films into a predetermined shape, a resist material and various chemicals are also required. It becomes. Controlled quality components are also used in the wafer 1 itself. In addition, various devices such as a film forming device, an etching device, and a cleaning device are required when forming the device 5. Then, the device 5 is formed by performing a huge number of steps in these devices.

That is, a large amount of financial cost and time cost are applied to the wafer 1 in which the plurality of devices 5 are formed, and if the wafer 1 is consumed one after another for the test processing, the loss becomes enormous. This applies not only to the case of changing the specifications of the device chip, but also to the case of performing test processing and evaluating the processing result in order to pursue more preferable processing conditions. This problem is particularly remarkable in recent years because various costs for forming the device 5 are increasing as the performance of the device 5 is improved.

Therefore, in order to dramatically reduce the consumption in the test processing of the wafer 1 on which the device 5 is formed, the work piece, the work piece processing method, and the work piece manufacturing method according to the present embodiment are provided. .. The workpiece is consumed in place of the wafer 1 when the test process is performed. Then, by evaluating the result of the test processing performed on the workpiece, the same knowledge as when the test processing is performed on the wafer 1 can be obtained. Next, the work piece according to the present embodiment and the manufacturing method of the work piece will be described.

In the method for manufacturing the workpiece, the wafer 1 is divided as shown in FIG. 1 to form the block 13 shown in FIG. 2 (B). Further, a simulated wafer 19 having the opening 21 shown in FIG. 4 is prepared. Then, as shown in FIG. 4, the block 13 is housed in the opening 21 of the simulated wafer 19, and the tape-shaped protective member 23 is arranged in the simulated wafer 19 and the block 13, so that the workpiece 27 exemplified in FIG. 5 is formed. Can be manufactured.

FIG. 11A is a flowchart showing the flow of each step of the manufacturing method of the workpiece 27. In the manufacturing method, a block forming step S10, a simulated wafer preparation step S20, and a workpiece forming step S30 are carried out. FIG. 11B is a flowchart showing the flow of each step carried out in the workpiece forming step S30. In the work piece forming step S30, the block accommodating step S31 and the protective member arranging step S32 are carried out. Hereinafter, each step of the manufacturing method will be described in detail, and the workpiece 27 will also be described.

FIG. 1 is a perspective view schematically showing how the block forming step S10 is performed. In the block forming step S10, first, the wafer 1 is prepared. As described above, in the wafer 1, a plurality of scheduled division lines 3 intersecting each other are set on the surface 1a, and the device 5 is formed in each region partitioned by the scheduled division lines 3. In the block forming step S10, the wafer 1 is divided along a part of the scheduled division lines 3 included in the plurality of scheduled division lines 3 set in the wafer 1.

In order to divide the wafer 1, for example, the wafer 1 may be cut along the scheduled division line 3 by using the cutting device 2 shown in FIG. However, the method of dividing the wafer 1 is not limited to this. The cutting device 2 includes a cutting unit 4 for cutting the wafer 1 and a holding unit (not shown) for holding the wafer 1. The cutting unit 4 includes an annular cutting blade 8 and a spindle whose tip 12 side is pierced through a through hole in the center of the cutting blade 8.

The cutting blade 8 includes, for example, an annular base having the through hole in the center and an annular grindstone portion arranged on the outer peripheral portion of the annular base. The base end side of the spindle is connected to a spindle motor (not shown) housed inside the spindle housing 6, and the cutting blade 8 can be rotated by operating the spindle motor.

When the wafer 1 is cut by the cutting blade 8, heat is generated due to the friction between the cutting blade 8 and the wafer 1. Further, when the wafer 1 is cut, cutting chips are generated from the wafer 1. Therefore, in order to remove heat and cutting chips generated by cutting, cutting water such as pure water is supplied to the cutting blade 8 and the wafer 1 while the wafer 1 is being cut. The cutting unit 4 includes a cutting water supply nozzle 10 for supplying cutting water to the cutting blade 8 and the like on the side of the cutting blade 8.

Before the wafer 1 is carried into the cutting device 2, the wafer 1, the annular frame 9 made of metal or the like, and the adhesive tape 7 called a dicing tape are integrated to form the frame unit 11. To. The adhesive tape 7 is attached to the annular frame 9 so as to close the opening of the annular frame 9, and the adhesive surface of the adhesive tape 7 is exposed in the opening of the annular frame 9. The wafer 1 is attached to the adhesive surface exposed in the opening. Then, the wafer 1 is carried into the cutting device 2 in the state of the frame unit 11 and cut.

When cutting the wafer 1, the frame unit 11 is placed on the holding unit, and the wafer 1 is held by the holding unit via the adhesive tape 7. Then, the holding unit is rotated to align the scheduled division line 3 of the wafer 1 with the machining feed direction of the cutting device 2. Further, the relative positions of the holding unit and the cutting unit 4 are adjusted so that the cutting blade 8 is arranged above the extension line of the planned division line 3 to be divided.

Next, the cutting blade 8 is rotated by rotating the spindle. Then, the cutting unit 4 is lowered to a predetermined height position, and the holding unit and the cutting unit 4 are relatively moved along the machining feed direction parallel to the upper surface of the holding unit. Then, the grindstone portion of the rotating cutting blade 8 comes into contact with the wafer 1, the wafer 1 is cut, and a cutting groove 3a along the scheduled division line 3 is formed in the wafer 1.

After cutting along one scheduled division line 3, the holding unit and the cutting unit 4 are moved in the indexing feed direction perpendicular to the machining feed direction, and along the other scheduled division lines 3 to be divided. Similarly, the wafer 1 is cut. After cutting along the planned division line 3 that is the target of all divisions along one direction, the holding unit is rotated around an axis perpendicular to the holding surface, and divisions along the other directions as well. The wafer 1 is cut along the planned division line 3 which is the target of the above.

FIG. 2A shows a perspective view schematically showing a wafer 1 which is divided into individual blocks 13 and formed. When the wafer 1 is cut along the planned division line 3 to be divided, a plurality of blocks 13 surrounded by the cutting grooves 3a are formed. The planned division line 3 to be divided is appropriately determined according to the shape of the block 13. Here, the block 13 and the planned division line 3 to be divided will be described.

FIG. 2B schematically shows a perspective view of the block 13. Each of the formed blocks 13 includes a plurality of devices 5 and an unprocessed scheduled division line 3 between the devices 5. The block 13 shown in FIG. 2B includes a total of four devices 5 arranged vertically and horizontally two by two, and two raw division schedule lines 3 intersecting each other at the center.

As will be described later, the block 13 constitutes the workpiece according to the present embodiment. Then, a test process is performed on the work piece provided with the block 13, and the result of the process is evaluated. Here, when evaluating the result of the test processing, the state of the region where the device 5 is formed and the region where the scheduled division line 3 between the devices 5 is set is the main target of the evaluation.

The plurality of devices 5 formed on the surface 1a of the wafer 1 have basically the same structure, and the scheduled division lines 3 set between the devices 5 also have the same structure. When the wafer 1 is subjected to test processing, the regions in which the devices 5 are formed are processed in the same manner, and the regions in which the scheduled division lines 3 are set are also processed in the same manner.

Therefore, in evaluating the result of the test processing, even if the entire area of the wafer 1 is not observed, at least one place where the device 5 is formed and at least one place where the planned division line 3 is set are used. It may be sufficient to observe. For example, when evaluating an element of the processing result due to the laminated structure of the processed portion. Therefore, in the method for manufacturing a work piece according to the present embodiment, a block 13 including a plurality of devices 5 and an unprocessed scheduled division line 3 between the devices 5 is formed.

Note that, in FIGS. 2A and 2B, a block 13 having four devices 5 on the surface 13a and including two scheduled division lines 3 is shown, but the block 13 is not limited thereto. That is, the block 13 may include at least two devices 5 adjacent to each other and one scheduled division line 3 between the two devices 5. Further, the number of devices 5 and the number of scheduled division lines 3 included in each block 13 formed by dividing one wafer 1 need not be constant.

Next, the simulated wafer preparation step S20 carried out by the work piece manufacturing method according to the present embodiment will be described. In the simulated wafer preparation step S20, a simulated wafer 19 (see FIG. 4 and the like) imitating the wafer 1 is prepared. The simulated wafer 19 is integrated with the block 13 and used as a part of the workpiece 27 as described later. Then, a test process is performed on the workpiece 27 instead of the wafer 1, and the result of the test process is evaluated. At this time, unless the workpiece 27 is processed in the same manner as the wafer 1, the result of the test processing cannot be evaluated appropriately.

Therefore, the simulated wafer 19 prepared in the simulated wafer preparation step S20 is prepared so that the workpiece 27 has the same shape as the wafer 1 when the workpiece 27 is formed by being integrated with the block 13. It is a member. Therefore, it is preferable to use a member made of the same material as that of the block 13 for the simulated wafer 19. The simulated wafer 19 exhibits the size and shape of the wafer 1 and includes an opening 21 (see FIG. 4) for accommodating the block 13.

For example, when the wafer 1 is a disc-shaped substrate, the simulated wafer 19 is a disc-shaped substrate having the same diameter and thickness as the wafer 1. The simulated wafer 19 can be prepared, for example, by forming an opening 21 in a wafer, which is a substrate for manufacturing a wafer 1 in which a plurality of devices 5 are formed, without forming the device 5. FIG. 3 is a perspective view schematically showing how the opening 21 is formed in the wafer 15 in which the device 5 is not formed.

For the processing of forming the opening 21 in the wafer 15, for example, the laser processing apparatus 14 shown in FIG. 3 is used. The laser processing apparatus 14 includes a laser processing unit 16 that irradiates the wafer 15 with a laser beam 18, and a holding unit (not shown) such as a chuck table that holds the wafer 15. The laser processing unit 16 includes a laser oscillator (not shown) capable of oscillating a laser. The holding unit can move along a direction parallel to the top surface.

The laser processing unit 16 irradiates the wafer 15 held in the holding unit with the laser beam 18 emitted from the laser oscillator. The laser processing unit 16 includes a mechanism for positioning the focusing point of the laser beam 18 at a predetermined height position.

The wavelength of the laser beam 18 that the laser processing unit 16 irradiates the wafer 15 is, for example, a wavelength that the wafer 15 has absorbency (a wavelength that is absorbed by the wafer 15). Then, when the laser beam 18 is irradiated to the wafer 15 along the contour of the region where the opening 21 is formed while moving the holding unit, the wafer 15 is ablated and a processing mark 17 is formed. Then, when the region surrounded by the processing marks 17 of the wafer 15 is removed, the opening 21 shown in FIG. 4 is formed in the wafer 15.

Alternatively, the wavelength of the laser beam 18 that the laser processing unit 16 irradiates the wafer 15 is set to the wavelength at which the wafer 15 has transparency (the wavelength that passes through the wafer 15). In this case, when the focusing point of the laser beam 18 is positioned at a predetermined depth inside the wafer 15 and the laser beam 18 is focused on the wafer 15 along the region where the opening 21 is formed, the inside of the wafer 15 is condensed. A modified layer is formed. Then, an external force is applied to the wafer 15 to extend cracks in the vertical direction from the modified layer to form a processing mark 17, and similarly, an opening 21 is formed.

Further, the opening 21 may be formed by another method. For example, the wafer 15 may be cut using the cutting device 2 shown in FIG. 1 to form the opening 21. In this case, first, the cutting blade 8 is positioned above one end of the contour of the region where the opening 21 is formed, and the cutting unit 4 is rotated so that the lower end of the cutting blade 8 reaches the back surface 15b of the wafer 15. To lower. Then, the holding unit is moved to cut the cutting blade 8 into the wafer 15 along the contour, and the cutting unit 4 is raised.

When the machining marks 17 are formed on the wafer 15 along the contour of the region where the openings 21 are formed by repeating such cutting and the region surrounded by the machining marks 17 is removed, the openings 21 shown in FIG. 4 are formed on the wafer 15. Is formed in.

The device 5 may be formed on the front surface 15a or the back surface 15b of the wafer 15 in which the opening 21 is formed and becomes the simulated wafer 19. For example, a wafer used for manufacturing a device chip, which is not suitable for manufacturing a device chip due to some problem after a plurality of devices 5 are formed, may be reused as a wafer 15. ..

Here, the opening 21 formed in the wafer 15 does not have to have a shape and size exactly corresponding to the block 13, and may be a size and shape that can accommodate the block 13. For example, the opening 21 may be larger than the block 13. Further, the opening 21 may have a size and shape capable of accommodating a plurality of blocks 13. Further, a plurality of openings 21 may be formed in the wafer 15, and the block 13 may be accommodated in each of the openings 21.

When the opening 21 is formed in the wafer 15 by the method illustrated above, the simulated wafer 19 is manufactured. Here, the simulated wafer 19 may be manufactured immediately before forming the workpiece 27 including the block 13. In this case, in the simulated wafer preparation step S20, the simulated wafer 19 is prepared by forming an opening 21 in the wafer 15.

Further, a large number of simulated wafers 19 may be manufactured and stored in advance in preparation for manufacturing the workpiece 27. In this case, in the simulated wafer preparation step S20, the simulated wafer 19 manufactured and stored in advance is carried out from the storage location to be prepared.

Either of the block forming step S10 and the simulated wafer preparation step S20 may be carried out first. In the work piece manufacturing method according to the present embodiment, after the block forming step S10 and the simulated wafer preparation step S20 are carried out, the work piece forming step S30 is carried out. FIG. 4 is a perspective view schematically showing how the workpiece forming step S30 is carried out.

FIG. 11B is a flowchart schematically showing the flow of each step carried out in the workpiece forming step S30. In the work piece forming step S30, a block accommodating step S31 for accommodating the block 13 in the opening 21 of the simulated wafer 19 and a protective member disposing step S32 for disposing the protective member 23 in the simulated wafer 19 so as to close the opening 21 are performed. carry out.

Here, either the block accommodating step S31 or the protective member disposing step S32 may be performed first. That is, after the block 13 is housed in the opening 21 of the simulated wafer 19, the protective member 23 may be arranged in the simulated wafer 19 together with the block 13 housed in the opening 21. Alternatively, after disposing the protective member 23 in the simulated wafer 19 so as to close the opening 21, the block 13 is placed in the opening 21 of the simulated wafer 19 so as to dispose the block 13 in the protective member 23 exposed inside the opening 21. May be accommodated.

In the work piece forming step S30, the simulated wafer 19 and the block 13 are integrally formed via the protective member 23 to form the work piece 27. Here, the protective member 23 is, for example, an adhesive tape called a dicing tape, which is configured in the same manner as the adhesive tape 7 shown in FIG. 1, or a resin sheet that is thermocompression bonded to the simulated wafer 19 and the block 13. When the protective member 23 is a resin sheet, it is thermocompression bonded to the simulated wafer 19 and the block 13 at a temperature lower than the melting point of the protective member 23.

When the back surface 13b side is exposed upward and the block 13 is processed in the processing step described later, the protective member 23 is arranged on the surface 13a on which the device 5 is formed. Further, when the front surface 13a side is exposed upward and the block 13 is processed, the protective member 23 is arranged on the back surface 13b. The protective member 23 has a function of protecting the surface of the block 13 in contact with the protective member 23 during a series of steps.

Here, for example, as shown in FIG. 5, the protective member 23 may be adhered or adhered to an annular frame 25 whose outer peripheral side is made of metal or the like. The annular frame 25 is configured in the same manner as the annular frame 9 shown in FIG. 1 and has the same function. In this case, the workpiece 27 has the same shape as the frame unit 11, and the block 13 and the simulated wafer 19 can be easily handled via the annular frame 25.

Further, when the processing for dividing the block 13 and the simulated wafer 19 is performed in the processing step described later, each piece generated from the divided block 13 and the simulated wafer 19 is supported by the protective member 23, so that each piece of the block 13 and the simulated wafer 19 is supported by the protective member 23. It is easy to handle.

When the workpiece 27 is formed by carrying out the workpiece forming step S30, the block 13 is integrated with the simulated wafer 19 and has the same form as the wafer 1. Therefore, when various processes are performed on the block 13 together with the simulated wafer 19, the block 13 is processed in the same manner as in the case of processing the wafer 1, and the same processing result as in the case of processing the wafer 1 is obtained.

Therefore, when a plurality of workpieces 27 are manufactured and each workpiece 27 is subjected to test machining under different machining conditions, each wafer 1 is subjected to test machining under different machining conditions. You can compare and examine the quality of processing conditions. Therefore, the workpiece 27 has the same value as the wafer 1 in carrying out the test processing. According to the work piece manufacturing method according to the present embodiment, a plurality of work pieces 27 can be manufactured from the wafer 1, and therefore, when the test processing is performed using the work piece 27, the consumption amount of the wafer 1 is significantly reduced. it can.

Next, a processing method of the workpiece according to the present embodiment will be described. In the processing method, the workpiece 27 is processed in the same manner as the wafer 1 is processed. The processing is, for example, a test processing. Here, by explaining the processing method, it is shown that the block 13 included in the workpiece 27 can be processed in the same manner as the wafer 1 is processed.

As the processing method, a processing apparatus including a holding unit having a holding surface capable of holding the wafer 1 and a processing unit capable of processing the wafer held by the holding unit is used. In the processing method, a work piece holding step of holding the work piece 27 on the holding surface of the holding unit of the processing apparatus and a processing step of processing the work piece 27 held on the holding surface of the holding unit are carried out. To do. Hereinafter, each step carried out by the processing method will be described.

FIG. 5 is a perspective view schematically showing a work piece holding process. FIG. 5 schematically shows a perspective view of the holding unit 20 of the processing apparatus. The holding unit 20 is configured in the same manner as the holding unit of each processing apparatus that appears in the description of the present embodiment. The following description of the holding unit 20 and the description of how to use the holding unit 20 are referred to as a description of the holding unit and a description of how to use the holding unit 20 in other processing apparatus.

The holding unit 20 is provided with a porous member having a diameter corresponding to the diameter of the wafer 1 on the upper surface. The upper surface of the porous member is the holding surface 22 of the holding unit 20. The holding unit 20 has an exhaust passage (not shown) at one end that leads to the porous member, and a suction source (not shown) is arranged on the other end side of the exhaust passage.

In the work piece holding step, first, the work piece 27 is placed on the holding unit 20 so that the simulated wafer 19 and the block 13 overlap the holding surface 22. After that, the suction source is operated, the generated negative pressure is applied to the workpiece 27, and the holding unit 20 holds the block 13 and the simulated wafer 19 via the protective member 23. At this time, the holding unit 20 may be provided with a frame holding mechanism (not shown) such as a clamp for holding the frame 25 on the outer peripheral side of the holding surface 22 of the holding unit 20.

Next, the processing process will be described. In the processing step, the workpiece 27 held by the holding surface 22 of the holding unit 20 is processed by the processing unit provided in the processing apparatus. FIG. 6 is a perspective view schematically showing the processing process. In FIG. 6, the holding unit 20 is omitted for convenience of explanation.

Further, FIG. 6 shows a case where the processing apparatus is a laser processing apparatus 24. The laser processing device 24 includes a laser processing unit 26 as a processing unit. Then, in the processing step, the laser processing unit 26 is used to irradiate the workpiece 27 with the laser beam 28 to laser-process the simulated wafer 19 and the block 13.

Here, the laser processing unit 26 includes a laser oscillator (not shown) capable of oscillating a laser, and can, for example, emit a laser beam 28 having a wavelength that is absorbent to the wafer 1 (a wavelength that the wafer 1 can absorb). The laser processing unit 26 includes a condensing lens (not shown) inside, and condenses the laser beam 28 emitted from the laser oscillator on the wafer 1 held by the holding unit 20. When the laser beam 28 is focused on the wafer 1, the wafer 1 is ablated to form processing marks.

Since the block 13 is formed by cutting the wafer 1, when the laser beam 28 is focused on the block 13, the block 13 is ablated in the same manner as the wafer 1 to form processing marks.

The holding unit 20 of the laser processing apparatus 24 can move (process feed) along a direction parallel to the holding surface 22. By moving the holding unit 20 that holds the work piece 27, the work piece 27 can be machined and fed.

When the workpiece 27 including the block 13 and the simulated wafer 19 is laser-processed, the holding unit 20 is rotated to align the extension direction of the planned division line 3 of the block 13 with the processing feed direction of the laser processing apparatus 14. Further, the relative positions of the holding unit 20 and the laser processing unit 26 are adjusted so that the laser processing unit 26 is arranged above the extension line of the scheduled division line 3. For example, the laser machining unit 26 is positioned above the end of the simulated wafer 19.

Next, the holding unit 20 and the laser processing unit 26 are relatively moved along the processing feed direction while irradiating the workpiece 27 with the laser beam 28 from the laser processing unit 26. Then, as shown in FIG. 6, machining marks 3b are formed on the simulated wafer 19 and the block 13 along the extension direction of the scheduled division line 3. When the processing mark 3b is formed at a depth from the upper surface to the lower surface of the simulated wafer 19 and the block 13, the simulated wafer 19 and the block 13 are divided by the processing mark 3b.

When the block 13 includes another scheduled division line 3, the workpiece 27 is processed in the same manner along the other scheduled division line 3. Then, a machining mark 3b is formed in the block 13 along all the scheduled division lines 3 included in the block 13.

For example, when the processing method of the workpiece according to the present embodiment is carried out as a test processing for pursuing the processing conditions in the processing apparatus, the simulated wafer 19 is completely processed depending on the processing conditions and the content of the evaluation of the processing results. It may be sufficient to process only the block 13 without processing. In this case, the processing mark 3b may be formed only on the block 13 without processing the simulated wafer 19.

Further, depending on the processing conditions of the test processing and the content of the evaluation of the processing result, the test processing result cannot be appropriately evaluated unless the entire block 13 and the simulated wafer 19 are processed in the same manner as the entire wafer 1 is processed. In some cases. In this case, not only the block 13 and the simulated wafer 19 are processed along the scheduled division line 3 included in the block 13, but also the simulated wafer 19 is further set with the scheduled division line 3 to process the simulated wafer 19.

For example, the scheduled division line 3 arranged in the same manner as the wafer 1 is set as the simulated wafer 19, and the simulated wafer 19 is also processed along each scheduled division line 3. It should be noted that the block 13 may not be included in a part of the planned division lines 3. In this case, the block 13 and the simulated wafer 19 can be test-processed in the same manner as the test processing is performed on the wafer 1.

In addition, regardless of the processing method of the workpiece according to the present embodiment, it is conceivable to carry out the test processing as it is on the block 13 cut out from the wafer 1. However, the block 13 alone cannot be processed in the same manner as the wafer 1. Therefore, it may not be possible to properly evaluate the result of test processing.

Moreover, even if the holding unit 20 having the holding surface 22 for holding the wafer 1 tries to hold only the block 13, negative pressure leaks from the holding surface 22 in a region that does not overlap with the block 13. Therefore, since the block 13 cannot be held by the holding unit 20 so that the wafer 1 is held by the holding unit 20, appropriate processing cannot be performed. Alternatively, in order to hold the block 13, it is necessary to replace the holding surface 22 with a holding unit 20 having a shape corresponding to the block 13.

On the other hand, according to the processing method of the workpiece according to the present embodiment, the block 13 can be processed in the same manner as the wafer 1 which is the base of the block 13 included in the workpiece 27 is processed. Further, the workpiece 27 can be held by the holding unit 20 as described above. Therefore, instead of performing the test processing on the wafer 1, the test processing can be performed using the workpiece 27.

Here, the irradiation conditions of the laser beam 28 when ablation processing is performed on the wafer 1 in the laser processing apparatus 24 are set as follows, for example, when the wafer 1 is a silicon wafer.
Wavelength: 355 nm
Repeat frequency: 50kHz
Average output: 5W
Feed rate: 200 mm / sec When the work piece 27 is subjected to test processing and the processing result is evaluated, the optimum conditions can be pursued and the irradiation conditions of the laser beam 28 can be adjusted as appropriate.

The processing performed on the workpiece 27 by the processing method of the workpiece according to the present embodiment is not limited to the laser ablation processing. For example, the laser processing unit 26 may be able to irradiate the workpiece 27 with a laser beam 28 having a wavelength that is transparent to the block 13 (wavelength that passes through the block 13). In this case, by condensing the laser beam 28 at a predetermined height position inside the block 13 or the like, a modified layer can be formed as a processing mark 3b inside the block 13 or the like.

After forming a modified layer along the planned division line 3 inside the block 13 and the like, when cracks are extended above and below the block 13 and the like from the modified layer, the block 13 is divided along the planned division line 3. To. In the processing method of the workpiece according to the present embodiment, such laser machining may be performed on the workpiece 27. That is, when the workpiece 27 is used, the test processing in the laser processing can be performed and the processing result can be evaluated.

Here, the irradiation conditions of the laser beam 28 when performing laser processing for forming a modified layer on the wafer 1 in the laser processing apparatus 24 are set as follows, for example, when the wafer 1 is a silicon wafer.
Wavelength: 1064 nm
Repeat frequency: 50kHz
Average output: 1W
Feed rate: 200 mm / sec When the work piece 27 is subjected to test processing and the processing result is evaluated, the optimum conditions can be pursued and the irradiation conditions of the laser beam 28 can be adjusted as appropriate.

Further, in the processing method of the workpiece according to the present embodiment, the workpiece 27 may be machined instead of laser machining. FIG. 7 is a perspective view schematically showing how the cutting device 30 performs cutting on the workpiece 27. The cutting device 30 is configured in the same manner as the cutting device 2 shown in FIG.

That is, the cutting device 30 includes a cutting unit 32 that cuts the wafer 1. The cutting unit 32 includes an annular cutting blade 36 and a spindle whose tip 40 side is pierced through a through hole in the center of the cutting blade 36. The spindle is connected to a spindle motor (not shown) housed inside the spindle housing 34. Further, the cutting unit 32 is provided with a cutting water supply nozzle 38 for supplying cutting water to the cutting blade 36 on the side of the cutting blade 36.

Further, the cutting device 30 includes a holding unit (not shown) like the laser machining device 24, and the cutting device 30 carries out the workpiece holding step as in the laser machining device 24. Then, in the cutting device 30, the machining step is carried out after the workpiece holding step is carried out. FIG. 7 is a perspective view schematically showing a machining process performed by the cutting apparatus 30.

In the processing step, first, the cutting blade 36 is positioned above the extension line of the scheduled division line 3 included in the block 13 on the outer peripheral side of the simulated wafer 19, and the cutting blade 36 is rotated and lowered to a predetermined height position. Next, the holding unit is machined and fed so that the cutting blade 36 is cut into the simulated wafer 19 and the block 13. Then, a cutting groove 3c is formed in the simulated wafer 19 and the block 13.

Even when the machining process is carried out by the cutting apparatus 30, the cutting may be concentrated on the block 13 as necessary, and the simulated wafer 19 and the block may be cut in the same manner as the actual machining in which the entire area of the wafer 1 is cut. Cutting may be carried out over the entire area of 13. When the workpiece 27 is used, the test processing can be performed in the same manner as the test processing is performed on the wafer 1, and the processing result can be evaluated.

Further, in the processing method of the workpiece according to the present embodiment, the workpiece including the block 13 may be processed by a grinding device capable of grinding the wafer 1. In this case, in the work piece manufacturing method, a work piece having an aspect different from that of the frame unit is manufactured. When manufacturing the workpiece to be ground by the grinding device, the block forming step S10 and the simulated wafer preparation step S20 are carried out in the same manner as in the case of manufacturing the workpiece 27.

Then, as shown in FIG. 8, the workpiece forming step S30 is carried out. When manufacturing a work piece to be ground by a grinding device, a protective member 29 having a diameter similar to that of the simulated wafer 19 is used. Then, the block 13 is housed in the opening 21 of the simulated wafer 19, and the block 13 and the simulated wafer 19 are integrated via the protective member 29. FIG. 9 shows the manufactured workpiece 31. When forming the workpiece 31 to be ground, the protective member 29 is arranged on the surface 13a on which the device 5 of the block 13 is formed.

After that, in the processing method of the workpiece 31 according to the present embodiment, the workpiece 31 is conveyed to the grinding device 42 shown in FIG. 10, and the workpiece 31 is ground by the grinding device 42. The grinding device 42 includes a holding unit 44 capable of holding the wafer 1 and a grinding unit 46 as a processing unit for processing the wafer 1. The holding unit 44 is configured in the same manner as the holding unit 20 shown in FIG.

The grinding unit 46 includes a spindle 48 along a direction substantially perpendicular to the holding surface of the holding unit 44, a wheel mount 50 provided at the lower end of the spindle 48, and a rotational drive source such as a motor connected to the upper end of the spindle 48. (Not shown) and. Further, a grinding wheel 54 provided with grinding wheels 56 arranged in an annular shape is mounted on the lower surface of the wheel mount 50. The grinding wheel 54 is fixed to the wheel mount 50 by a fixture 52 such as a bolt.

In the processing method of the workpiece according to the present embodiment, first, the workpiece holding step is carried out. In the work piece holding step, the work piece 31 is placed on the holding surface of the holding unit 44. At this time, the back surface 13b side of the block 13 to be the surface to be ground of the workpiece 31 (the back surface 19b side of the simulated wafer 19) faces upward, and the front surface 13a side of the block 13 (the surface 19a side of the simulated wafer 19) is the said. Turn to the holding surface. Then, the suction source of the holding unit 44 is operated, and the block 13 and the simulated wafer 19 are held by the holding unit 44 via the protective member 29.

Next, a machining step is carried out, and the workpiece 31 held by the holding unit 44 is ground by the grinding unit 46. In the processing step, the grinding wheel 54 is rotated by operating the rotary drive source to rotate the spindle 48. It is also rotated around an axis perpendicular to the holding surface of the holding unit 44. Then, the grinding unit 46 is lowered to bring the grinding wheel 56 moving on the rotary track into contact with the back surface 13b of the block 13 and the back surface 19b of the simulated wafer 19. Then, the block 13 and the simulated wafer 19 are ground and thinned.

After that, when the thickness of the block 13 and the simulated wafer 19 reaches a predetermined thickness, the lowering of the grinding unit 46 is stopped to stop the grinding process. The predetermined thickness is the specified thickness of the device chip formed from the wafer 1. Here, in the grinding apparatus 42, a thickness measuring unit (not shown) for measuring the thickness of the wafer 1 being ground is provided in the vicinity of the holding unit 44.

The thickness measuring unit includes a probe that contacts the surface to be ground of the wafer 1 in a region that does not overlap with the grinding wheel 54, and detects the height of the back surface 1b of the wafer 1 when the probe contacts the surface to be ground. Then, the thickness of the wafer 1 is calculated based on the difference in height between the holding surface of the holding unit 44 and the back surface 1b of the wafer 1. Here, in the wafer 1, while a part of the back surface 1b is being ground, the other part is exposed outside the grinding wheel 54, so that the probe of the thickness measuring unit is always the wafer. Can contact the back surface 1b of 1.

When the workpiece 31 is ground by the grinding device 42, the probe of the thickness measuring unit may not always be in contact with the back surface 13b of the block 13 constituting the workpiece 31, but the probe may be used. The back surface 19b of the simulated wafer 19 can always be contacted. Here, since the simulated wafer 19 is ground and thinned in the same manner as the block 13, the thickness of the block 13 can be measured by measuring the thickness of the simulated wafer 19.

On the other hand, regardless of the processing method of the workpiece according to the present embodiment, when grinding is performed only on the block 13, the probe of the thickness measuring unit may not always be in contact with the back surface 13b of the block 13. Absent. Therefore, the thickness of the block 13 cannot be measured appropriately, and it is difficult to stop the lowering of the grinding unit 46 when the block 13 reaches a predetermined thickness.

In the first place, it is difficult to hold only the block 13 on the holding surface of the holding unit 44. Therefore, the block 13 alone cannot be processed in the same manner as the wafer 1. Even if the block 13 can be held by the holding unit 44, the processing situation is completely different depending on whether only the block 13 is ground or the wafer 1 is ground. Therefore, with only the block 13, the result cannot be evaluated appropriately even if the test processing is performed.

On the other hand, in the processing method of the workpiece according to the present embodiment, since the simulated wafer 19 is processed together with the block 13, the workpiece 31 can be processed in the same manner as the wafer 1. Therefore, the test processing can be performed using the workpiece 31 instead of the wafer 1. In this case, the number of wafers 1 consumed in the test processing can be dramatically reduced.

Here, the processing conditions when grinding the wafer 1 in the grinding device 42 are, for example, that the rotation speed of the grinding wheel 54 is 6,000 rotations / minute, the rotation speed of the holding unit 44 is 300 rotations / minute, and the grinding unit. The descending speed of 46 is set to 1 μm / sec. Optimal conditions can be pursued by performing test processing on the workpiece 31 and evaluating the processing results, and these processing conditions can be adjusted as appropriate.

When the test processing is performed by using the workpieces 27 and 31 according to the present embodiment instead of the wafer 1, it is preferable to observe the block 13 included in the workpieces 27 and 31 and evaluate the processing result. .. Since the block 13 includes the scheduled division line 3 and the device 5 which are the main observation targets in the test machining, the result of the test machining can be sufficiently evaluated.

The present invention is not limited to the description of the above embodiment, and can be implemented with various modifications. For example, in the above embodiment, the case where the opening 21 capable of accommodating the block 13 in the simulated wafer 19 is formed in the center of the simulated wafer 19 has been illustrated and described. However, the formation position of the opening 21 is not limited to the vicinity of the center of the simulated wafer 19.

For example, the opening 21 may be formed in a region on the outer peripheral side that does not include the center of the simulated wafer 19. In this case, when test processing is performed on the workpieces 27 and 31, it is possible to evaluate an element that depends on the position of the block 13 in the simulated wafer 19.

Further, when the workpieces 27 and 31 include a plurality of blocks 13, the types of the blocks 13 need not be the same. For example, there is a case where it is desired to perform test machining under the same machining conditions for each of the blocks 13 formed from different types of wafers 1. In this case, if the workpieces 27 and 31 include a plurality of types of blocks 13, the machining results can be evaluated by simultaneously performing test machining on each block 13 under the same machining conditions.

In addition, the structure, method, and the like according to the above-described embodiment can be appropriately modified and implemented as long as they do not deviate from the scope of the object of the present invention.

1,15 Waha 1a, 13a, 15a, 19a Front surface 1b, 13b, 15b, 19b Back surface 3 Divided line 3a, 3c Cutting groove 3b Machining mark 5 Device 7 Adhesive tape 9,25 Frame 11 Frame unit 13 Block 17 Machining mark 19 Simulated waiha 21 Opening 23,29 Protective member 27,31 Work piece 2,30 Cutting device 4,32 Cutting unit 6,34 Spindle housing 8,36 Cutting blade 10,38 Cutting water supply nozzle 12,40 Tip 14,24 Laser Machining equipment 16,26 Laser processing unit 18,28 Laser beam 20,44 Holding unit 22 Holding surface 42 Grinding device 46 Grinding unit 48 Spindle 50 Wheel mount 52 Fixture 54 Grinding wheel 56 Grinding grindstone

Claims (8)

It is a work piece manufacturing method for manufacturing a plurality of work pieces by dividing a wafer in which a plurality of scheduled division lines intersecting each other are set on the surface and a device is formed in each region divided by the planned division lines. ,
A plurality of wafers are divided along a part of the planned division lines included in the plurality of planned division lines, and the wafer is provided with the plurality of devices and the raw planned division lines between the devices. The block forming process for forming blocks and
A simulated wafer preparation step of preparing a simulated wafer having an opening for accommodating the block and exhibiting the size and shape of the wafer.
A block accommodating step of accommodating the block in the opening of the simulated wafer and a protective member disposing step of disposing a protective member in the simulated wafer so as to close the opening are carried out, and the simulated wafer and the block are placed together. The process of forming the workpiece to be integrally formed via the protective member, and the process of forming the workpiece.
A method for producing a workpiece, which comprises. The method for manufacturing a workpiece according to claim 1, wherein the material of the simulated wafer is the same material as the material of the block. The method for manufacturing a workpiece according to claim 1, wherein in the process of forming the workpiece, the protective member is disposed on either the front surface or the back surface of the block including the device. A method for processing a work piece, which is a method for processing the work piece manufactured by the work piece manufacturing method according to claim 1.
The workpiece is held by the holding surface of the holding unit of the processing apparatus including a holding unit having a holding surface capable of holding the wafer and a processing unit capable of processing the wafer held by the holding unit. Work piece holding process and
A processing step of processing the workpiece held by the holding surface of the holding unit with the processing unit, and
A method for processing an workpiece, which comprises. A block that has multiple devices on its surface and has a planned division line between the devices,
A simulated wafer with an opening to accommodate the block,
A protective member that integrates the block housed in the opening of the simulated wafer and the simulated wafer.
A work piece, characterized in that it contains. The workpiece according to claim 5, wherein the material of the simulated wafer is the same material as the material of the block. The workpiece according to claim 5, wherein the protective member is disposed on either the front surface or the back surface of the block. The processing method of the workpiece according to claim 5, wherein the workpiece is processed.
The holding of the holding unit of the processing apparatus including the holding unit having a holding surface capable of holding the simulated wafer and the wafer having a size and shape, and a processing unit capable of processing the wafer held by the holding unit. A work piece holding step of holding the work piece on a surface, and a processing step of processing the work piece held on the holding surface of the holding unit with the work piece.
A method for processing an workpiece, which comprises.

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