JP2021059055A - Substrate manufacturing method and element substrate manufacturing method - Google Patents

Abstract

To manufacture an element substrate having a minute structure with a stable quality and high yield.SOLUTION: A substrate manufacturing method includes a step of cutting a wafer 200, on which a substrate region 10a is arranged, along cutting regions 11a, 11b encircling the substrate region 10a to manufacture a substrate 10, where an opening 40 for connecting the two cutting regions 11a, 11b is formed in a position separated from a corner part of the substrate region 10a in the substrate region 10a, and then the wafer 200 is cut along the cutting regions 11a, 11b.SELECTED DRAWING: Figure 5

Description

The present invention relates to a method for manufacturing an element substrate.

A method is known in which a structure for a plurality of substrates is formed on one large substrate, and then the large substrates are cut to manufacture the plurality of substrates at one time. Patent Document 1 discloses a method in which a triangular through hole for chamfering a corner portion is formed in advance at a position corresponding to a corner portion of each substrate before cutting. If such a through hole is provided, stress can be suppressed from being concentrated on the corners of each substrate at the time of cutting, and the occurrence of chipping or cracking due to cutting can be suppressed.

Japanese Unexamined Patent Publication No. 2008-6906

In the manufacturing process of the element substrate for liquid ejection used for the inkjet recording head, a plurality of structures for the element substrate having a fine structure are laid out on the wafer, and a plurality of element substrates are laid out by mechanical cutting such as blade dicing. To get. In the manufacturing process of such a device substrate, in order to reduce the cost, a structure corresponding to each device substrate is formed at a high density on the wafer, the cutting region is kept small, and as many device substrates as possible are cut out. Is required.

However, in a configuration in which the element substrates are arranged at a high density, if a through hole as disclosed in Patent Document 1 is formed, a crack may occur in the cut region before cutting. Since such cracks are not uniformly distributed, a stress difference occurs between the plurality of element substrates, and as a result, the liquid discharge state varies among the plurality of element substrates.

That is, in the case of manufacturing an element substrate having a fine structure as used for an inkjet recording head, it has been difficult to manufacture the element substrate in a state of stable quality and high yield.

The present invention has been made to solve the above problems. Therefore, the purpose is to manufacture a device substrate having a fine structure with stable quality and a high yield.

Therefore, the present invention is a substrate for manufacturing a substrate having a predetermined structure by cutting a wafer on which a substrate region having a predetermined structure is arranged along a plurality of cutting regions surrounding the substrate region. In the manufacturing method, in the substrate region, a forming step of forming an opening connecting the two cutting regions forming the corner portion at a position away from the corner portion of the substrate region, and along the cutting region. It is characterized by having a cutting step of cutting the wafer.

According to the present invention, it is possible to manufacture an element substrate having a fine structure with stable quality and a high yield.

Schematic diagram of the liquid discharge head that can be used in this embodiment Detailed view of the element substrate Diagram showing a wafer The figure which shows the opening of the comparative example The figure which shows the opening of 1st Embodiment The figure for demonstrating the structure of an element substrate and the process of forming an opening. The figure which shows the opening of the 2nd Embodiment The figure which shows the state which gave the joint member

1A and 1B are schematic views of a liquid discharge head 100 that can be used in this embodiment. FIG. 1A is an external perspective view, and FIG. 1B is a plan view of the liquid discharge head 100 as viewed from the side (+ z direction side) of the discharge port surface for discharging the liquid.

In the liquid discharge head 100 of the present embodiment, a plurality of liquid discharge modules 60 are arranged in a row in the longitudinal direction (y direction). Each liquid discharge module 60 has a substantially parallelogram element substrate 10 in which a plurality of discharge elements are arranged, and a flexible wiring board 30 for supplying electric power and a discharge signal to each discharge element. .. Each of the flexible wiring boards 30 is commonly connected to the electric wiring board 90 in which the power supply terminal and the discharge signal input terminal are arranged. The liquid discharge module 60 can be easily attached to and detached from the liquid discharge head 100. Therefore, any liquid discharge module 60 can be easily attached to or removed from the outside of the liquid discharge head 100 without disassembling the liquid discharge head 100.

In the liquid discharge head 100 configured by arranging a plurality of liquid discharge modules 60 in this way, even if a discharge failure occurs in any of the discharge elements, the liquid discharge module 60 in which the discharge failure occurs Only need to be replaced. Therefore, the yield in the manufacturing process of the liquid discharge head 100 can be improved, and the cost at the time of head replacement can be suppressed.

In the following description, the long side direction of the element substrate 10 having a substantially parallelogram is defined as the y direction, and the direction orthogonal to the long side direction is defined as the x direction. Further, the direction in which the liquid is discharged from the element substrate 10 is defined as the z direction. The xyz direction is a direction peculiar to each element substrate 10 and the wafer 200 described later when manufacturing the element substrate 10, and is irrelevant to the direction of gravity when used as the liquid discharge head 100.

2 (a) to 2 (c) are detailed views of one element substrate 10. As shown in FIG. 2A, the element substrate 10 of the present embodiment has a substantially parallelogram shape, and more specifically, the element substrate 10 of the present embodiment has a shape in which the tip of the acute-angled portion of the parallelogram is removed. Four rows of discharge port rows 50 are formed in the inner center of the element substrate 10, and a terminal row 19 for connecting to the flexible wiring board 30 is formed at the long side end portion on one side. Each of the four rows of discharge port rows 50 includes a plurality of discharge ports 13 arranged in the y direction, and each discharge port row 50 discharges inks of different colors such as cyan, magenta, yellow, and black. To do.

FIG. 2B is an enlarged view of the IIb portion of FIG. 2A. 2 (c) is a cross-sectional view taken along the line IIc-IIc of FIG. 2 (b). The element substrate 10 of the present embodiment is configured by laminating a discharge port forming member 18 on a silicon substrate 70. The discharge port forming member 18 is formed with a plurality of discharge ports 13 arranged at regular intervals in the y direction and pressure chambers 14 corresponding to the respective discharge ports 13. An energy generating element 15 for discharging a liquid is provided at a position facing each discharge port 13 on the silicon substrate 70. When a voltage is applied in response to the discharge signal, the energy generating element 15 applies pressure energy to the liquid (ink) contained in the pressure chamber 14 and discharges droplets from the corresponding discharge port 13. The electric power and the drive signal to the energy generating element 15 are supplied from the flexible wiring board 30 (see FIG. 1) via the terminal row 19 (see FIG. 2A) arranged on the silicon substrate 70.

In the silicon substrate 70, a liquid supply path 17a and a liquid recovery path 17b extend in the y direction on both sides where the energy generating elements 15 are arranged. Further, on the silicon substrate 70, a supply port 16a connecting the liquid supply path 17a and the pressure chamber 14 and a recovery port 16b connecting the liquid recovery path 17b and the pressure chamber 14 are provided at predetermined intervals in the y direction. Multiple are formed. Under the above configuration, a part of the liquid that has entered the pressure chamber 14 from the liquid supply path 17a through the supply port 16a is discharged from the discharge port 13 according to the discharge signal. Then, the liquid not discharged from the discharge port 13 is collected in the liquid recovery path 17b via the recovery port 16b.

In the present embodiment, a plurality of the element substrates 10 described above are manufactured at one time using one wafer.

FIG. 3 is a diagram showing a wafer 200 used in this embodiment. The wafer 200 has a structure of the element substrate 10 described with reference to FIGS. 2 (a) to 2 (c) formed on the front and back surfaces of a silicon wafer having a thickness of 725 μm and a diameter of 200 mm. On the surface of the wafer 200, a plurality of cutting regions 11 for cutting out the element substrate 10 are arranged so as to intersect each other. The process of manufacturing the structure of the element substrate 10 will be described in detail later.

In FIG. 3, the structure as the element substrate 10 is omitted, and the cutting region 11 and the cutting line 12 for blade dicing are shown. The first cutting line 12a and the second cutting line 12b indicate a line on which the blade should travel during blade dicing, and intersect with each other at an acute angle (acute angle) of 60 degrees. The first cutting region 11a and the second cutting region 11b are regions that are expected to be affected (cut) by cutting along the first cutting line 12a and the second cutting line 12b. In the present embodiment, both the first cutting region 11a and the second cutting region 11b have a width of 80 μm. The first cutting line 12a and the second cutting line 12b are located at the centers of the first cutting region 11a and the second cutting region 11b, respectively. In the present embodiment, 12 blade dicings (or 12) along the 12 first cutting lines 12a extending in the y direction and 6 times along the second cutting line 12b extending in the p direction intersecting them. Perform (or 6) blade dicing.

4 (a) and 4 (b) are diagrams showing a comparative example for comparison with the present embodiment. In the comparative example, in the wafer 200 shown in FIG. 3, a triangular opening 20 as disclosed in Patent Document 1 is formed.

FIG. 4A is an enlarged view of the area surrounded by the alternate long and short dash line in FIG. The parallelogram region surrounded by the two first cutting regions 11a and the two second cutting regions 11b is the element substrate region 10a including one element substrate 10. The device substrate 10 finally manufactured has an acute-angled portion (a portion corresponding to the opening 20 in the comparative example) removed from the parallelogram element substrate region 10a. As shown in FIG. 4A, the wafer 200 already has a structure for each element substrate 10. Further, of the four corners of the parallelogram element substrate region 10a, two corners exhibiting acute angles are formed with triangular openings 20 so that the corners are cut.

FIG. 4B is an enlarged view of an intersection region between the first cutting line 12a and the second cutting line 12b. At a position where the two triangular openings 20 are point-symmetric with respect to the intersection O of the first cutting line 12a and the second cutting line 12b in the region sandwiched between the first cutting region 11a and the second cutting region 11b. It is formed so as to face each other. By providing such an opening 20, it is possible to suppress the stress generated when the blade passes through the intersecting region at the end of the element substrate 10.

However, when the width of the first cutting region 11a and the second cutting region 11b is as narrow as about 80 μm as in the present embodiment, the distance between the two openings 20 facing each other across the intersection O is also close, and these two openings 20 The rigidity of the sandwiched intersection area is weaker than that of other areas. Therefore, when the resin material which is the material of the discharge port forming member 18 shrinks, the crack 21 as shown in FIG. 4B may occur due to the stress at the time of shrinkage. At this time, the cracks 21 are not uniformly formed for all the intersecting regions on the wafer 200. For example, as shown in FIG. 3, it may be difficult to form a triangular opening 20 similar to the central portion in the intersecting region near the outer circumference of the circular wafer 200. Then, at such a position, a crack 21 smaller than the central region may be generated, or the crack 21 itself may not be generated.

On the other hand, the region where the crack 21 is generated is locally released from the stress and may affect the shape of the discharge port 13 located in the vicinity. That is, if the cracks 21 occur in a non-uniform state in a plurality of intersecting regions on the wafer 200, the ejection performance may vary even if the element substrate 10 is cut out from the same wafer 200. ..

5 (a) and 5 (b) are diagrams for explaining the opening 40 of the present embodiment. FIG. 5 (a) corresponds to an enlarged view of the region surrounded by the alternate long and short dash line in FIG. 3, and FIG. 5 (b) is an enlarged view of the intersection region of the cutting lines 12a and 12b.

In the present embodiment, a trapezoidal opening 40 for connecting the first cutting region 11a and the second cutting region 11b is provided inside the element substrate region 10a sandwiched between the first cutting region 11a and the second cutting region 11b. Form. The opening 40 is arranged at a position separated by a distance L1 along the first cutting region 11a from the apex Q of the corner formed by the first cutting region 11a and the second cutting region 11b, and is parallel to the x direction. It has a base, a lower base, and a side of L2 = 50 μm parallel to the y direction. By providing such an opening 40, the element substrate region 10a is divided into a region to be the element substrate 10 and a corner region 43.

In the present embodiment, the distance between the two openings 40 facing each other via the intersection O is larger than the distance between the openings 20 of the comparative example (between Q and Q), and the rigidity of the intersection region is stronger than that of the comparative example. Therefore, cracks in the intersection region are less likely to occur than in the comparative example, and the variation in stress depending on the state of the cracks is suppressed. As a result, the ejection performance of the plurality of element substrates 10 cut out from the same wafer can be made more stable than in the comparative example. That is, according to the present embodiment, while enjoying the effect of suppressing chipping and cracking when the blade passes through the intersecting region, it is possible to suppress the occurrence of cracks in the intersecting region and to obtain a plurality of element substrates 10 with stable quality. It becomes possible to manufacture.

6 (a1) to 6 (e2) are diagrams for explaining the structure of the element substrate 10 and the process of forming the opening 40 in the wafer 200 of the present embodiment. 6 (a1) to 6 (e1) show how the structure of the element substrate 10 is formed, and FIGS. 6 (a2) to 6 (e2) show how the opening 40 is formed. 6 (a2) to 6 (e2) correspond to the VIe2-VIe2 cross section of FIG. 5 (b), but here, one of the cutting regions 11 (the region where the first cutting region 11a and the second cutting region 11b are combined). The part is omitted. 6 (a1) to (e1) and 6 (a2) to (e2) show states in the same process (timing), respectively. Hereinafter, for convenience, the side on which the discharge port 13 is formed (+ z direction side) will be referred to as a front surface, and the side on which the supply path 17a and the recovery path 17b are formed (−z direction side) will be referred to as a back surface.

FIG. 6A1 shows a state in which a wafer-shaped silicon substrate 70 is prepared, an energy generating element 15 is formed on the front surface, and a first etching mask layer 210 is formed on the back surface. In the region of the element substrate 10, the first etching mask layer 210 is formed in a region excluding the positions where the supply path 17a and the recovery path 17b are formed. As the first etching mask layer 210, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a photosensitive resin and the like can be preferably used.

FIG. 6 (a2) shows the region of the opening 40 at the same timing as FIG. 6 (a1). In the region of the opening 40, the first etching mask layer 210 is formed in a region excluding the position where the opening 40 is formed. That is, in the steps shown in FIGS. 6 (a1) and 6 (a2), the first etching mask layer 210 is formed with a supply path 17a, a recovery path 17b, and an opening 40 on the back surface of the wafer-shaped silicon substrate 70. It is patterned so as to cover an area other than the area. In the step of FIG. 6A2, an alignment mark 43A used for conducting an energization inspection of the individual element substrates 10 is formed in the corner region 43 on the surface side in association with the individual element substrates 10. Is preferable. The corner region 43 is a region that is finally separated from the element substrate 10. By arranging the alignment mark 43A, which is unnecessary after cutting, in the corner region 43, the layout efficiency of the entire wafer 200 can be improved.

6 (b1) and 6 (b2) show a state in which the back surface of the silicon substrate 70 is subjected to reactive ion etching treatment (hereinafter referred to as RIE) with respect to the states of FIGS. 6 (a1) and 6 (a2). (First etching step). By the first etching step, a supply path 17a, a recovery path 17b, and a groove 41 which will later become an opening 40 are simultaneously formed on the silicon substrate 70.

RIE is etching using ions. By colliding the particles while providing an electric charge to the region to be etched, the region to be etched can be scraped and processed. The device for performing RIE includes a plasma source for generating ions and a reaction chamber for etching. For example, when an ICP (inductively coupled plasma) dry etching apparatus capable of generating high-density ions is used as a plasma source, coating and etching can be alternately performed (that is, deposition / etching process). In the deposition / etching process, for example SF6 gas can be used as the etching gas, and for example C4F8 gas can be used as the coating gas. In the first etching step of the present embodiment, it is preferable to employ dry etching using an ICP plasma apparatus, but it is also possible to use another type of plasma source such as an apparatus having an ECR (electron cyclotron resonance) plasma source. Good.

6 (c1) and 6 (c2) show that the first etching mask layer 210 formed on the back surface of the silicon substrate 70 is removed from the state of FIGS. 6 (b1) and 6 (b2), and the surface of the silicon substrate 70 is formed. The state in which the second etching mask layer 220 is formed is shown. In the region of the element substrate 10 (see FIG. 6C1), the second etching mask layer 220 is formed in a region excluding the positions where the supply port 16a and the recovery port 16b are formed. On the other hand, in the region of the opening 40 (see FIG. 6C2), the second etching mask layer 220 is formed in the region excluding the position where the opening 40 is formed. That is, in the steps shown in FIGS. 6 (c1) and 6 (c2), the second etching mask layer 220 is formed with a supply port 16a, a recovery port 16b, and an opening 40 on the surface of the wafer-shaped silicon substrate 70. It is patterned so as to cover other than the portion.

6 (d1) and 6 (d2) show a state in which the surface of the silicon substrate 70 is subjected to a reactive ion etching process with respect to the states of FIGS. 6 (c1) and 6 (c2) (second etching step). ). By the second etching step, the silicon substrate 70 is simultaneously formed with a supply port 16a communicating with the supply path 17a, a recovery port 16b communicating with the recovery path 17b, and an opening 40 penetrating from the front surface to the back surface. That is, the opening 40 is formed by the same etching process as the supply port 16a and the recovery port 16b (formed collectively by the etching process).

The supply path 17a and the recovery path 17b formed in the first etching step have a groove shape extending in the y direction. On the other hand, the supply port 16a and the recovery port 16b formed in the second etching step are small openings provided at predetermined intervals in the y direction, as shown in FIG. 2B. Further, the opening 40 formed by the cooperation of the first etching step and the second etching step is a trapezoidal opening having an upper base and a lower base parallel to the x direction.

6 (e1) and 6 (e2) show a state in which the discharge port forming member 18 is formed after removing the second etching mask layer 220 with respect to the states of FIGS. 6 (d1) and (d2). The method for forming the discharge port forming member 18 is not particularly limited, but for example, a method using a support and the first and second photosensitive resins is preferable. In this case, examples of the support include a dry film, glass, and a silicon wafer, but a dry film is preferable in consideration of peeling later. As the dry film, a polyethylene terephthalate film, a polyimide film, a polyamide film and the like can be used. In addition, in order to make it easy to peel off the dry film, a mold release treatment may be performed.

As a method for forming the first photosensitive resin on the support, a coating method such as a spin coating method or a slit coating method, or a transfer method such as a laminating method or a pressing method can be adopted. As the first photosensitive resin, an epoxy resin that dissolves in an organic solvent, an acrylic resin, a urethane resin, or the like is preferably used, and is formed on the surface of the support with a thickness of, for example, 20 μm. In the region of the device substrate 10, the region in which the first photosensitive resin is arranged is the region that later becomes the pressure chamber 14. After patterning the first photosensitive resin, a second photosensitive resin is formed into a film, and a discharge port 13 is formed at a position facing the energy generating element 15 of the second photosensitive resin. Then, by removing the first photosensitive resin with an organic solvent, the discharge port forming member 18 as shown in FIG. 6 (e1) is completed. In this case, the second photosensitive resin becomes the discharge port forming member 18.

As described above, in the substrate manufacturing method of the present embodiment, the step for forming the structure of the element substrate 10 and the step for forming the opening 40 are performed in parallel by a common process.

When the steps described in FIGS. 6 (a1) to 6 (e2) are completed, the wafer 200 having the above structure formed is attached to a dicing tape to perform blade dicing. That is, the wafer 200 is cut along the first cutting line 12a and the second cutting line 12b shown in FIG. As a result, a plurality of element substrates 10 are cut out.

As described above, according to the substrate manufacturing method of the present embodiment, in the wafer 200 before cutting, a trapezoidal opening 40 is formed at a position away from the apex Q of the corner portion together with the plurality of element structures and the cutting region 11. Form. As a result, the rigidity of the intersecting region can be made stronger than that of the comparative example, and the occurrence of cracks can be suppressed. According to such an embodiment, it is possible to manufacture a plurality of element substrates having a fine structure from one wafer in a state of stable quality and high yield.

In this embodiment, the trapezoidal openings 40 need not be formed at all the intersections existing on the wafer 200. The opening 40 may not be formed in the region near the outer peripheral edge of the circular wafer 200.

(Second embodiment)
7 (a) and 7 (b) are diagrams for explaining the opening 40 of the second embodiment. FIG. 7A corresponds to an enlarged view of the area surrounded by the alternate long and short dash line in FIG. 3, and FIG. 7B is an enlargement of the intersecting area of the first cutting line 12a and the second cutting line 12b in the present embodiment. It is a figure.

Also in this embodiment, a trapezoidal opening 40 connecting the first cutting region 11a and the second cutting region 11b is formed inside the element substrate region 10a at a position away from the apex Q. However, the opening 40 of the present embodiment is for a straight line LR connecting the vertices of two element substrate regions 10a facing each other, that is, a bisector LR of the corner formed by the first cutting region 11a and the second cutting region 11b. It shall be a trapezoid with a vertical upper base and lower base. With such an opening 40, the area of the opening 40 is the same as that of the first embodiment, even if the size of the angle, the distance L1 from the apex Q to the y direction, and the length L2 of the side side of the opening 40 are the same as those in the first embodiment. Can be smaller than that of the first embodiment. That is, as compared with the first embodiment, it is possible to suppress a decrease in rigidity due to the removal of the material at the opening 40 portion, and to manufacture the plurality of element substrates 10 with more stable quality.

(Other embodiments)
In mechanical cutting such as blade dicing, the fine corner region 43 may be peeled off from the dicing tape due to the stress of cutting and become dust. In such a case, after the steps of FIGS. 6 (e1) and 6 (e2), a step of adding a member that partially joins the element substrate 10 and the corner region 43 may be provided.

FIG. 8 shows a state in which the element substrate 10 and the corner region 43 are partially joined by the joining member 42. The joining member 42 is preferably a resin having a composition different from that of the resin used for the discharge port forming member 18. If such a joining member 42 is arranged, even if the region is divided at the cutting region 11 and the corner region 43 is peeled off from the dicing tape, the corner region 43 is not separated and becomes dust. .. Further, even if the corner region 43 is chipped or cracked due to cutting, there is a possibility that these chips or cracks are propagated to the discharge port forming member 18 or the silicon substrate 70 having different compositions via the joining member 42. It is low and does not affect the ejection performance of the element substrate 10.

Further, in the first and second embodiments, two types of trapezoidal openings have been exemplified, but of course, the openings are not limited to the above two types of shapes. For example, the opening 40 may have an inverted shape of the opening 40 of the first embodiment. Further, it may be a rectangle or an ellipse other than the trapezoid. Further, the sides of the opening 40 do not have to completely coincide with the sides of the cutting regions 11a and 11b. If the side side of the opening 40 substantially overlaps the cutting regions 11a and 11b, the effect described in the above embodiment can be obtained. In addition, although the example in which the opening 40 is formed only in the acute-angled portion of the device substrate region 10a has been described, the opening 40 may be formed in the obtuse-angled portion. In any case, if the opening 40 connecting the two cutting regions 11a and 11b is formed at a position separated from the apex of the corner of the element substrate region 10a in the direction in which the cutting region 11 extends, it will be described in the above embodiment. You can get the effect.

Further, the above embodiment has been described as an opening 40 that completely penetrates from the discharge port forming member 18 to the silicon substrate 70, but if it is a groove-shaped opening having a certain depth, it does not have to be a through opening. , The effect described in the above embodiment can be obtained. For example, in the manufacturing process described with reference to FIGS. 6 (a1) to 6 (e2), if the first etching mask layer 210 is also formed in the opening region and the second etching mask layer 220 is formed in the region excluding the opening region, the first etching mask layer 210 is also formed in the opening region. It is possible to form such a groove shape.

Further, in the above embodiment, an example in which substantially parallelogram element substrates 10 are arranged in the longitudinal direction in order to form the long liquid discharge head 100 shown in FIGS. 1A and 1B will be described. However, the present invention is not limited to such a form. The general shape of the element substrate may be, for example, a trapezoid or a rectangle.

10 Element substrate 10a Element substrate area 12a First cutting line 12b Second cutting line 40 Opening 200 Wafer

Claims (18)

A substrate manufacturing method for manufacturing a substrate having a predetermined structure by cutting a wafer on which a substrate region having a predetermined structure is arranged along a plurality of cutting regions surrounding the substrate region.
A forming step of forming an opening connecting the two cutting regions forming the corner portion in the substrate region at a position away from the corner portion of the substrate region.
A cutting step of cutting the wafer along the cutting region,
A substrate manufacturing method comprising. The substrate manufacturing method according to claim 1, wherein a plurality of the substrate regions are arranged on the wafer, and each of the substrate regions is surrounded by the plurality of cutting regions that intersect each other. The substrate manufacturing method according to claim 1 or 2, wherein the corners have an acute angle. The substrate manufacturing method according to any one of claims 1 to 3, wherein the opening is a trapezoid having two sides perpendicular to the direction in which one of the two cutting regions extends. The substrate manufacturing method according to any one of claims 1 to 3, wherein the opening is a trapezoid having two sides perpendicular to the bisector of the corner portion. The substrate manufacturing method according to any one of claims 1 to 5, wherein the opening penetrates the wafer. The substrate manufacturing method according to any one of claims 1 to 5, wherein the opening has a groove shape that does not penetrate the wafer. The substrate manufacturing method according to any one of claims 1 to 7, wherein in the forming step, the opening is formed by dry etching. The substrate manufacturing method according to any one of claims 1 to 8, wherein the forming step is performed in parallel with the step for forming the predetermined structure. The substrate manufacturing method according to any one of claims 1 to 9, wherein the cutting step is performed by blade dicing. Between the forming step and the cutting step,
The invention according to any one of claims 1 to 10, further comprising a step of imparting a joining member that partially connects the region including the predetermined structure and the region including the apex of the corner portion inside the opening. Substrate manufacturing method. The predetermined structure includes a pressure chamber for accommodating a liquid, an energy generating element for applying energy to the liquid contained in the pressure chamber, a discharge port for discharging the energized liquid, and the pressure chamber. The substrate manufacturing method according to any one of claims 1 to 11, further comprising a supply port for supplying the liquid to the pressure chamber and a recovery port for recovering the liquid from the pressure chamber. A pressure chamber for accommodating a liquid, an energy generating element for applying energy to the liquid contained in the pressure chamber, a discharge port for discharging the energized liquid, and a supply for supplying the liquid to the pressure chamber. A method for manufacturing an element substrate having a structure including a port and a recovery port for collecting liquid from the pressure chamber.
A step of arranging a plurality of substrate regions and a plurality of cutting regions intersecting each other so as to surround each of the plurality of substrate regions on a wafer.
A first forming step of forming the structure in each of the plurality of substrate regions, and
A second forming step of forming an opening connecting the two cutting regions forming the corner portion in the substrate region at a position away from the corner portion of the substrate region.
A method for manufacturing an element substrate, which comprises a cutting step of cutting the wafer along the cutting region. The method for manufacturing an element substrate according to claim 13, wherein the second forming step is performed in parallel with the first forming step, and the opening is formed by the same etching process as the supply port and the recovery port. .. The method for manufacturing an element substrate according to claim 13 or 14, wherein the cutting step is performed by blade dicing. Between the second forming step and the cutting step, a step of imparting a joining member that partially connects the region including the structure and the region including the apex of the corner portion to the inside of the opening is further added. The method for manufacturing an element substrate according to any one of claims 13 to 15. According to any one of claims 13 to 16, in the first forming step, an alignment mark associated with the structure is further formed in a region of the substrate region separated from the region including the structure by the opening. The method for manufacturing an element substrate according to the description. An element substrate having an element structure formed and having side edges cut by blade dicing.
A corner region including a corner formed by the two said side edges,
An opening that divides the corner region and the region including the element structure, and
An element substrate which is arranged in the opening and has a joining member for joining the corner region and the region including the element structure.

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