JP2021052217A - Semiconductor device - Google Patents

Abstract

To provide a semiconductor device capable of suppressing an increase in an area and improving a discharge capacity to ESD more than ever before.SOLUTION: A semiconductor device includes: a substrate having a first conductivity type; a well region provided on the substrate and having a second conductivity type different from the first conductivity type; a plurality of first conductive parts which are provided in the well region, extend in a first direction, and are juxtaposed separated from each other in a second direction crossing the first direction, and each of which has a first conductivity type; a second conductive part provided in the well region, provided between each two of the plurality of first conductive parts, having a second conductivity type, and extending in the first direction; and a low concentration region of a first conductivity type provided between the well region and at least one of the plurality of first conductive parts, and having a lower impurity concentration than the first conductive part.SELECTED DRAWING: Figure 10

Description

The present invention relates to a semiconductor device.

Semiconductor devices are affected by electrostatic discharge (ESD), such as damage or malfunction. A diode is used as a protection element that protects the circuit to be protected from ESD.

As an example of the diode structure, for example, Patent Document 1 describes a Schottky barrier diode in which the outer periphery of a positive well region is surrounded by a positive contact region and the positive contact region is further surrounded by a negative contact region. ing.

Japanese Patent Application Laid-Open No. 2013-535823

In recent years, as the density of semiconductor integrated circuits has increased, there has been a demand for reducing the area of protective elements. On the other hand, it is also required to improve the protection function of the protection element by increasing the discharge capacity of the protection element against ESD. However, in the protective element, there is a trade-off relationship between the reduction of the area and the improvement of the discharge capacity, and it is difficult to achieve both.

The present invention has been made in view of the above points, and an object of the present invention is to provide a semiconductor device capable of improving the discharge capacity for ESD while suppressing an increase in area.

The semiconductor device according to the present invention has a substrate having a first conductive mold, a well region provided on the substrate and having a second conductive mold different from the first conductive mold, and a well region in the well region. With a plurality of first conductive portions each provided, each having the first conductive mold and extending in the first direction and juxtaposed with each other in a second direction intersecting the first direction. , The second conductive portion provided in the well region, provided between each of the plurality of first conductive portions, having the second conductive mold, and extending in the first direction, and the said The first conductive type low concentration region, which is provided between the well region and at least one of the plurality of first conductive portions and has a lower impurity concentration than the first conductive portion, is included.

The other semiconductor device according to the present invention includes a substrate having a first conductive type, a well region provided on the substrate and having a second conductive type different from the first conductive type, and the well region. A first conductive portion provided inside and having the first conductive mold and having an annular pattern, and a first conductive portion provided inside the well region and having the second conductive mold and having the first conductive portion. The first conductive portion, which is provided between the well region and at least a part of the first conductive portion and has a lower impurity concentration than the first conductive portion, and a second conductive portion located so as to be surrounded by the first conductive portion. Includes a low concentration region of the mold.

According to the semiconductor device according to the present invention, it is possible to improve the discharge capacity for ESD while suppressing the increase in area.

It is a figure which shows an example of the usage form of the protection element which concerns on embodiment of this invention, and is the circuit diagram which shows an example of the partial structure of the integrated circuit including protection element 1. It is a top view which shows an example of the structure of the semiconductor chip which accommodated the integrated circuit which concerns on embodiment of this invention. A plan view showing the configuration of the protective element according to the embodiment of the present invention. It is sectional drawing along the line 2B-2B in FIG. 2A. It is a top view which shows the path of the discharge current at the time of electrostatic discharge in the protection element which concerns on embodiment of this invention. FIG. 3B is a cross-sectional view taken along the line 3B-3B in FIG. 3A. It is a top view which shows the structure of the protection element which concerns on 1st comparative example. It is sectional drawing along the line 4B-4B in FIG. 4A. It is a graph which shows the current-voltage characteristic of each of the protection element which concerns on embodiment of this invention and the protection element which concerns on 1st comparative example acquired by the TLP measurement method. It is a top view which shows the structure of the protection element which concerns on the 2nd comparative example. 6 is a cross-sectional view taken along the line 6B-6B in FIG. 6A. It is a top view which shows an example of the layout of the protection element pair which concerns on embodiment of this invention. It is sectional drawing along the line 7B-7B in FIG. 7A. It is a top view which shows the structure of the protection element which concerns on other embodiment of this invention. It is a top view which shows the structure of the protection element which concerns on other embodiment of this invention. It is a top view which shows the structure of the protection element which concerns on other embodiment of this invention. It is a top view which shows the structure of the protection element which concerns on other embodiment of this invention.

Hereinafter, an example of the embodiment of the present invention will be described with reference to the drawings. In each drawing, the same or equivalent components and parts are designated by the same reference numerals, and duplicate description will be omitted.

[First Embodiment]
FIG. 1A is a diagram showing an example of usage of protection elements 1 and 2 as a semiconductor device according to an embodiment of the present invention, and shows an example of a partial configuration of an integrated circuit 100 including protection elements 1 and 2. It is a circuit diagram. The integrated circuit 100 includes protection elements 1 and 2, an output circuit 110 which is an example of a protection target circuit protected by the protection elements 1 and 2, and electrode pads 111, 112, and 113. The electrode pad 111 is a power supply terminal for supplying the power supply voltage VDD to each circuit in the integrated circuit 100 including the output circuit 110, and is connected to each circuit in the integrated circuit 100 including the output circuit 110 via the power supply line 114. It is connected. The electrode pad 112 is a ground terminal for supplying the ground voltage VSS to each circuit in the integrated circuit 100 including the output circuit 110, and is connected to each circuit in the integrated circuit 100 including the output circuit 110 via the ground line 115. It is connected. The electrode pad 113 is a signal output terminal for taking out the output signal output from the output circuit 110 to the outside of the integrated circuit 100, and is connected to the output terminal of the output circuit 110 via the signal line 116.

The integrated circuit 100 may, for example, constitute an LCD (liquid crystal display) driver. In this case, in the integrated circuit 100, the plurality of output circuits 110 and the electrode pads 113 correspond to a plurality of pixels of the LCD. Is provided. FIG. 1B is a plan view showing an example of the configuration of the semiconductor chip 100A accommodating the integrated circuit 100 when the integrated circuit 100 constitutes the LCD driver. The outer shape of the semiconductor chip 100A is, for example, a rectangle, and electrode pads are arranged along each side of the semiconductor chip 100A. The plurality of electrode pads 113 connected to each of the plurality of output circuits 110 are arranged along one side of the semiconductor chip 100A, for example, and the protection elements 1 and 2 are arranged directly under each of the plurality of electrode pads 113. ing.

In order to cope with the increase in the number of pixels of the LCD, it is necessary to increase the number of output circuits 110 mounted on the integrated circuit 100. Further, it is necessary to increase the number of protection elements 1 and 2 as the number of output circuits 110 increases. When increasing the number of output circuits 110 and the number of protection elements 1 and 2, if the expansion of the area of the semiconductor chip 100A is unacceptable, it is necessary to reduce the pitch between the electrode pads 113, and accordingly, the protection elements It is necessary to reduce the areas of 1 and 2. However, in general, when the area of the protective element is reduced, the discharge capacity of the protective element is reduced, and the protective function thereof is reduced.

The protective elements 1 and 2 according to the present embodiment can improve the discharge capacity as compared with the conventional case while suppressing an increase in the area. In other words, it is possible to reduce the area while maintaining the discharge capacity. Hereinafter, the protection element 1 will be mainly described. Although the output circuit 110 has been illustrated as an example of the protection target circuit protected by the protection elements 1 and 2, the protection target circuit may be any circuit. Further, the protection elements 1 and 2 can be mounted on an integrated circuit used for applications other than the LCD driver.

FIG. 2A is a plan view showing the configuration of the protective element 1 as the semiconductor device according to the embodiment of the present invention, and FIG. 2B is a cross-sectional view taken along the line 2B-2B in FIG. 2A. The protective element 1 has an N-type conductive N-well 11 provided on the surface layer of the P-type conductive silicon substrate 10. The protective element 1 includes a first conductive portion 20 having a P-shaped conductive mold that functions as an anode and a second conductive portion 30 having an N-shaped conductive mold that functions as a cathode formed in the N well 11. .. It is also possible to provide the first conductive portion 20 and the second conductive portion 30 on the surface layer portion of the N-type silicon substrate.

The first conductive portion 20 has a first portion 21, a second portion 22, and a third portion 23 extending in the Y direction, respectively, in FIG. 2A. The first portion 21, the second portion 22, and the third portion 23 are juxtaposed with each other in the X direction in FIG. 2A.

The first conductive portion 20 further has a fourth portion 24 and a fifth portion extending in the X direction in FIG. 2A, respectively. The fourth part 24 is connected to one end of each of the first part 21, the second part 22 and the third part 23, and the fifth part 25 is the first part 21, the second part 22. And is connected to the other end of each of the third portion 23. As described above, the first conductive portion 20 has a "day" -shaped pattern in which two rectangular rings are connected.

The first portion 21 to the fifth portion 25 of the first conductive portion 20 are each composed of a P-type semiconductor having a relatively high impurity concentration, and each has a low P-type concentration having a relatively low impurity concentration. It is connected to the N well 11 via the region 28. As described above, the low concentration region 28 having a relatively low impurity concentration is formed between the first portions 21 to 5 fifth portions 25 and the N well 11 of the first conductive portion 20 having a relatively high impurity concentration. By interposing the protective element 1, it is possible to secure a predetermined withstand voltage. Further, the first portions 21 to 5 of the first conductive portion 20 are each provided with a common signal line 116 (not shown) in the wiring layer (not shown) via a plurality of contacts 29 (FIGS.). 1A) is connected.

The second conductive portion 30 has a first island portion 31 and a second island portion 32 extending in the Y direction, respectively, in FIG. 2A. The first island portion 31 is provided between the first portion 21 and the second portion 22 of the first conductive portion 20. That is, the first island portion 31 is sandwiched between the first portion 21 and the second portion 22 of the first conductive portion 20, and faces both of them. The first island portion 31 is insulated and separated from the first conductive portion 20 by an insulator 40 that surrounds the outer periphery of the first island portion 31.

The second island portion 32 of the second conductive portion 30 is provided between the second portion 22 and the third portion 23 of the first conductive portion 20. That is, the second island portion 32 is sandwiched between the second portion 22 and the third portion 23 of the first conductive portion 20, and faces both of them. The second island portion 32 is insulated and separated from the first conductive portion 20 by an insulator 40 that surrounds the outer periphery of the second island portion 32.

The second conductive portion 30 further includes an annular portion 38 having an annular pattern surrounding the outer periphery of the first conductive portion 20. The annular portion 38 has a rectangular annular pattern having a portion extending in the Y direction and a portion extending in the X direction in FIG. 2A. The portion extending in the Y direction of the annular portion 38 faces the first portion 21 and the third portion 23 of the first conductive portion 20, and the portion extending in the X direction of the annular portion 38 is the first conductive portion 20. It faces the fourth portion 24 and the fifth portion 25 of the above. The annular portion 38 is insulated and separated from the first conductive portion 20 by an insulator 41 that surrounds the outer periphery of the first conductive portion 20. Further, the annular portion 38 is insulated and separated from other elements (not shown) provided around the protective element 1 by an insulator 42 surrounding the outer circumference of the annular portion 38. The insulators 40, 41 and 42 are formed using, for example, a known STI (Shallow Trench Isolation) technique.

The first island portion 31, the second island portion 32, and the annular portion 38 of the second conductive portion 30 are each composed of an N-type semiconductor having a relatively high impurity concentration, and have a relatively high impurity concentration. It is connected to the lower N-well 11. Further, the first island portion 31, the second island portion 32, and the annular portion 38 of the second conductive portion 30 are commonly provided in the wiring layer (not shown) via a plurality of contacts 39, respectively. Is connected to the power supply line 114 (see FIG. 1A).

As described above, the protective element 1 has a double island structure in which the second conductive portion 30 that functions as the cathode is composed of the first island portion 31 and the second island portion 32 that are arranged separately from each other. The first conductive portion 20 functioning as an anode forms two rings surrounding the first island portion 31 and the second island portion 32 of the second conductive portion 30, respectively, the first portions 21 to 5 It has a portion 25 of. The second conductive portion 30 further includes an annular portion 38 that surrounds the outer periphery of the first conductive portion 20.

FIG. 3A is a plan view showing a path of a discharge current at the time of electrostatic discharge in which a second conductive portion 30 functioning as a cathode has a low potential with respect to a first conductive portion 20 functioning as an anode. FIG. 3B. Is a cross-sectional view taken along the line 3B-3B in FIG. 3A. When an electrostatic discharge occurs in which the second conductive portion 30 has a low potential with respect to the first conductive portion 20, the direction indicated by the arrow in FIGS. 3A and 3B, that is, the first conductive portion 20 to the second A discharge current flows toward the conductive portion 30 of the. As shown in FIG. 3B, the discharge current flows along the outer edges of the insulators 40 and 41 provided between each portion of the first conductive portion 20 and each portion of the second conductive portion 30.

In the protective element 1 according to the present embodiment, as described above, the second conductive portion extending in the Y direction between the first portion 21 and the second portion 22 of the first conductive portion 20 extending in the Y direction. The first island portion 31 of the portion 30 is provided, and the second conductive portion 30 extending in the Y direction between the second portion 22 and the third portion 23 of the first conductive portion 20 extending in the Y direction. A second island portion 32 is provided. By alternately arranging P-type semiconductors and N-type semiconductors extending in the same direction as each other in this way, it is possible to improve the area efficiency of the current path of the discharge current during electrostatic discharge, and the discharge of the protective element 1 can be improved. You can improve your ability. Further, in the protective element 1 according to the present embodiment, the first conductive portion 20 further includes a fourth portion 24 and a fifth portion 25 extending in the X direction, and the second conductive portion 30 is the first. Further includes a rectangular annular annular portion 38 surrounding the outer periphery of the conductive portion 20 of the above. Thereby, the area efficiency of the current path of the discharge current at the time of electrostatic discharge can be further improved.

That is, according to the protection element 1 according to the present embodiment, the current path from the first portion 21 of the first conductive portion 20 to the first island portion 31 and the annular portion 38 of the second conductive portion 30 is Y. Formed along the direction. Further, a current path from the second portion 22 of the first conductive portion 20 to the first island portion 31 and the second island portion 32 of the second conductive portion 30 is formed along the Y direction. Further, a current path from the third portion 23 of the first conductive portion 20 to the second island portion 32 and the annular portion 38 of the second conductive portion 30 is formed along the Y direction. Further, a current path from the fourth portion 24 and the fifth portion 25 of the first conductive portion 20 to the annular portion 38 of the second conductive portion 30 is formed along the X direction.

As described above, according to the protection element 1 according to the present embodiment, the area efficiency of the current path of the discharge current at the time of electrostatic discharge can be increased, so that the discharge capacity is conventionally increased while suppressing the increase in the area of the protection element 1. It is possible to improve. In other words, it is possible to reduce the area of the protective element 1 while maintaining the discharge capacity.

FIG. 4A is a plan view showing the configuration of the protective element 1X according to the first comparative example, and FIG. 4B is a cross-sectional view taken along the line 4B-4B in FIG. 4A. In FIGS. 4A and 4B, the path of the discharge current at the time of electrostatic discharge in which the second conductive portion 30X functioning as the cathode has a low potential with respect to the first conductive portion 20X functioning as the anode is indicated by an arrow. There is.

In the protective element 1X according to the first comparative example, the first conductive portion 20X that functions as an anode has a rectangular pattern, and the second conductive portion 30X that functions as a cathode covers the outer periphery of the first conductive portion 20X. It has a rectangular annular pattern that surrounds it. The second conductive portion 30X is insulated and separated from the first conductive portion 20X by an insulator surrounding the outer periphery of the first conductive portion 20X. The first conductive portion 20X is composed of a P-type semiconductor having a relatively high impurity concentration, and is connected to the N well 11 via a P-type low concentration region 28X having a relatively low impurity concentration. The second conductive portion 30X is composed of an N-type semiconductor having a relatively high impurity concentration, and is connected to an N-well 11 having a relatively low impurity concentration. On the surface of the first conductive portion 20X, a plurality of contacts 29X are provided substantially uniformly over the entire surface of the first conductive portion 20. A plurality of contacts 39X are provided on the surface of the second conductive portion 30X. According to the protective element 1X according to the first comparative example, as shown in FIG. 4A, a current path is formed along the four sides of the first conductive portion 20X during electrostatic discharge.

FIG. 5 is a graph showing the current-voltage characteristics of the protection element 1 according to the embodiment of the present invention and the protection element 1X according to the first comparative example acquired by the TLP (Transmission Line Pulse) measurement method. The areas of the protective elements 1 and 1X are the same as each other. The TLP measurement method is a method of examining the characteristics of a protective element by using a rectangular wave obtained by discharging the electric charge stored in the coaxial cable. In FIG. 5, the horizontal axis represents the voltage between the anode and the cathode of the protective element, and the vertical axis represents the current flowing through the protective element. When compared at the same voltage, it was confirmed that the current flowing through the protective element 1 according to the embodiment of the present invention is significantly larger than the current flowing through the protective element 1X according to the first comparative example. This is because the protection element 1 according to the embodiment of the present invention has a higher discharge capacity than the protection element 1X according to the first comparative example, and has an excellent protection function for protecting the circuit to be protected from ESD. Shown.

FIG. 6A is a plan view showing the configuration of the protective element 1Y according to the second comparative example, and FIG. 6B is a cross-sectional view taken along the line 6B-6B in FIG. 6A. The protective element 1Y according to the second comparative example has a structure in which the first conductive portion 20Y has an insulator 40X arranged at the center of the first conductive portion 20X in the protective element 1X according to the first comparative example. In that respect, it differs from the protective element 1X according to the first comparative example. That is, in the protective element 1Y according to the second comparative example, the first conductive portion 20Y has a rectangular annular pattern, and the area of the first conductive portion 20Y is the protective element 1X according to the first comparative example. It is smaller than the area of the first conductive portion 20X.

When the current-voltage characteristics of the protection element 1Y according to the second embodiment were acquired by the TLP measurement method, characteristics substantially equivalent to those of the protection element 1X according to the first comparative example were obtained. From this result, the present inventor has obtained the finding that in the protective element 1X according to the first comparative example, the central portion of the first conductive portion 20X hardly contributes to the discharge, and only the outer peripheral portion contributes to the discharge. .. Based on the above findings, the present inventor efficiently arranges structural portions in which the P-type semiconductor constituting the anode of the protective element and the N-type semiconductor constituting the cathode face each other, thereby suppressing an increase in area. Based on the idea that the discharge capacity can be improved, the configuration of the protective element 1 according to the embodiment of the present invention has been devised.

Although the configuration of the protection element 1 provided between the signal line 116 and the power supply line 114 has been described above, the protection element 2 (see FIG. 1) provided between the ground line 115 and the signal line 116 is also the protection element 1. It can have the same structure as.

FIG. 7A is a plan view showing an example of the layout of the protection element pair including the protection elements 1 and 2. FIG. 7B is a cross-sectional view taken along the line 7B-7B in FIG. 7A, showing the cross-sectional structure of the protective element 2. As shown in FIG. 7A, the protection elements 1 and 2 may be arranged adjacent to each other. Further, as shown in FIG. 7B, the protective element 2 may have a configuration in which the region of the P-type semiconductor and the region of the N-type semiconductor in the protective element 1 are inverted.

That is, the protective element 2 has a P-type conductive P-well 11A formed on the surface layer portion of the silicon substrate 10. The protective element 2 includes a first conductive portion 20A having an N-type conductive mold that functions as a cathode and a second conductive portion 30A having a P-type conductive mold that functions as an anode formed in the P well 11A. .. The first conductive portion 20A in the protective element 2 has the same pattern as the first conductive portion 20 in the protective element 1, and the second conductive portion 30A in the protective element 2 is a second conductive portion in the protective element 1. It has the same pattern as 30. That is, the protective element 2 has a double island structure in which the second conductive portion 30A that functions as an anode is composed of two island portions that are arranged separately from each other, and the first conductive portion 20A that functions as a cathode is provided. , The second conductive portion 30A is arranged so as to form two rings surrounding each of the two separately arranged portions. The second conductive portion 30A further includes an annular portion surrounding the outer periphery of the first conductive portion 20A. Similar to the protective element 1, the protective element 2 having the above configuration can also obtain the effect that the discharge capacity for ESD can be improved as compared with the conventional case while suppressing the increase in the area.

[Second Embodiment]
FIG. 8 is a plan view showing the configuration of the protective element 1A as the semiconductor device according to the second embodiment of the present invention. The pattern of the first conductive portion 20 and the second conductive portion 30 of the protective element 1A is different from that of the protective element 1 according to the first embodiment. Specifically, the first embodiment of the protective element 1A is that the first conductive portion 20 further includes the sixth portion 26, and the second conductive portion 30 further includes the third island portion 33. It is different from the protective element 1 according to the form.

That is, in the protective element 1A, the first conductive portion 20 has a first portion 21, a second portion 22, a third portion 23, and a sixth portion 26 extending in the Y direction, respectively, in FIG. The first portion 21, the second portion 22, the third portion 23, and the sixth portion 26 are juxtaposed with each other in the X direction in FIG. In FIG. 8, the fourth portion 24 of the first conductive portion 20 extending in the X direction is connected to one end of each of the first portion 21, the second portion 22, the third portion 23, and the sixth portion 26. Has been done. In FIG. 8, the fifth portion 25 of the first conductive portion 20 extending in the X direction is attached to the other end of each of the first portion 21, the second portion 22, the third portion 23, and the sixth portion 26. It is connected. As described above, in the protective element 1A, the first conductive portion 20 has an "eye" -shaped pattern in which three rectangular rings are connected.

The third island portion 33 of the second conductive portion 30 is provided between the third portion 23 and the sixth portion 26 of the first conductive portion 20. That is, the third island portion 33 of the second conductive portion 30 is sandwiched between the third portion 23 and the sixth portion 26 of the first conductive portion 20, and faces both of them. ing. The third island portion 33 of the second conductive portion 30 is insulated and separated from the first conductive portion 20 by an insulator 40 surrounding the outer circumference of the third island portion 33. The second conductive portion 30 further includes an annular portion 38 having an annular pattern surrounding the outer periphery of the first conductive portion 20.

As described above, the protection element 1A includes a first island portion 31, a second island portion 32, and a third island portion 33 in which the second conductive portion 30 functioning as a cathode is arranged so as to be separated from each other. The first conductive portion 20 having a triple island structure and functioning as an anode surrounds the first island portion 31, the second island portion 32, and the third island portion 33 of the second conductive portion 30, respectively. It has a first portion 21 to a sixth portion 26 forming one ring. The second conductive portion 30 further includes an annular portion 38 that surrounds the outer periphery of the first conductive portion 20.

Similar to the protective element 1, the protective element 1A having the above configuration can also have the effect that the discharge capacity for ESD can be improved as compared with the conventional case while suppressing the increase in the area.

[Third Embodiment]
FIG. 9 is a plan view showing the configuration of the protective element 1B as the semiconductor device according to the third embodiment of the present invention. The pattern of the first conductive portion 20 and the second conductive portion 30 of the protective element 1B is different from that of the protective element 1 according to the first embodiment.

In the protective element 1B, the first conductive portion 20 includes a first portion 21, a second portion 22 and a third portion 23 extending in the Y direction, and a fourth portion 24 extending in the X direction intersecting these. It has a grid pattern consisting of a fifth portion 25 and a seventh portion 27. In other words, in the protective element 1B, the first conductive portion 20 has a "field" -shaped pattern.

The second conductive portion 30 includes a first island portion 31, a second island portion 32, a third island portion 33, and a fourth, which are provided inside each grid in the grid pattern of the first conductive portion 20. It has an island portion 34 of. The first island portions 31 to 4 of the second conductive portion 30 are each insulated and separated from the first conductive portion 20 by an insulator 40 surrounding their outer circumferences. The second conductive portion 30 further includes an annular portion 38 having a rectangular annular pattern surrounding the outer periphery of the first conductive portion 20.

Similar to the protective element 1, the protective element 1B having the above configuration can also have the effect that the discharge capacity for ESD can be improved as compared with the conventional case while suppressing the increase in the area.

[Fourth Embodiment]
FIG. 10 is a plan view showing the configuration of the protective element 1C as the semiconductor device according to the fourth embodiment of the present invention. The pattern of the first conductive portion 20 and the second conductive portion 30 of the protective element 1C is different from that of the protective element 1 according to the first embodiment. Specifically, the protective element 1C does not include a portion where the first conductive portion 20 extends in the X direction, and the first island portion 31 and the second island portion 32 constituting the second conductive portion 30. However, it has the same length as the first portions 21 to 3 of the first conductive portion 20.

That is, in the protective element 1C, the first conductive portion 20 has a first portion 21, a second portion 22, and a third portion 23 extending in the Y direction, respectively. The first portion 21, the second portion 22, and the third portion 23 are juxtaposed so as to be separated from each other in the X direction. In the protective element 1C, the second conductive portion 30 has a first island portion 31 extending in the Y direction and a second island portion 32. The first island portion 31 is provided between the first portion 21 and the second portion 22 of the first conductive portion 20. The second island portion 32 is provided between the second portion 22 and the third portion 23 of the first conductive portion 20. The second conductive portion 30 further includes an annular portion 38 having an annular pattern surrounding the outer periphery of the first conductive portion 20. The annular portion 38 has a rectangular annular pattern having a portion extending in the Y direction and a portion extending in the X direction in FIG. 2A.

Similar to the protective element 1, the protective element 1C having the above configuration can also have the effect that the discharge capacity for ESD can be improved as compared with the conventional case while suppressing the increase in the area.

[Fifth Embodiment]
FIG. 11 is a plan view showing the configuration of the protective element 1D as the semiconductor device according to the fifth embodiment of the present invention. The pattern of the first conductive portion 20 and the second conductive portion 30 of the protective element 1D is different from that of the protective element 1 according to the first embodiment.

In the protective element 1D, the first conductive portion 20 has a first portion 21 and a second portion 22 extending in the Y direction, respectively, in FIG. The first portion 21 and the second portion 22 are juxtaposed with each other in the X direction in FIG. In FIG. 11, the fourth portion 24 of the first conductive portion 20 extending in the X direction is connected to one end of each of the first portion 21 and the second portion 22. In FIG. 11, the fifth portion 25 of the first conductive portion 20 extending in the X direction is connected to the other ends of each of the first portion 21 and the second portion 22. As described above, in the protective element 1D, the first conductive portion 20 has a single rectangular ring-shaped pattern.

The second conductive portion 30 has a first island portion 31 extending in the Y direction in FIG. The first island portion 31 is provided between the first portion 21 and the second portion 22 of the first conductive portion 20. That is, the first island portion 31 is sandwiched between the first portion 21 and the second portion 22 of the first conductive portion 20, and faces both of them. The first island portion 31 is insulated and separated from the first conductive portion 20 by an insulator 40 that surrounds the outer periphery of the first island portion 31. The second conductive portion 30 further includes an annular portion 38 having an annular pattern surrounding the outer periphery of the first conductive portion 20.

Similar to the protective element 1, the protective element 1D having the above configuration can also obtain the effect that the discharge capacity for ESD can be improved as compared with the conventional case while suppressing the increase in the area.

Although the configuration of the semiconductor device according to the embodiment of the present invention has been illustrated above, the present invention is not limited to the configuration of the semiconductor device according to each of the above embodiments. That is, the semiconductor device according to the present invention has a plurality of portions each having a first conductive type, extending in a first direction, and juxtaposed with each other in a second direction intersecting with the first direction. Each has a second conductive mold different from the first conductive mold and extends in the first direction, and is separated from each other in the second direction of the first conductive portion. It suffices to include a second conductive portion having at least one island portion provided between the plurality of juxtaposed portions, and the configuration of the semiconductor device according to the first to fifth embodiments described above may include. On the other hand, it is possible to modify it as appropriate.

1, 1A, 1B, 1C Semiconductor device 10 Silicon substrate 11 N well 20 First conductive part 21 First part 22 Second part 23 Third part 24 Fourth part 25 Fifth part 26 Sixth Part 30 Second conductive part 31 First island part 32 Second island part 33 Third island part 34 Fourth island part 39 Circular part 40, 41 Insulator

Claims (5)

The substrate having the first conductive type and
A well region provided on the substrate and having a second conductive mold different from the first conductive mold,
A plurality of firsts provided in the well region, each having the first conductive mold, extending in the first direction, and juxtaposed with each other in a second direction intersecting the first direction. 1 conductive part and
A second conductive portion provided in the well region, provided between each of the plurality of first conductive portions, having the second conductive mold, and extending in the first direction.
The first conductive type low concentration region provided between the well region and at least one of the plurality of first conductive portions and having an impurity concentration lower than that of the first conductive portion.
Semiconductor devices including. The semiconductor device according to claim 1, further comprising a third conductive portion having the second conductive type and having the plurality of first conductive portions and an annular pattern surrounding the second conductive portion. The substrate having the first conductive type and
A well region provided on the substrate and having a second conductive mold different from the first conductive mold,
A first conductive portion provided in the well region, having the first conductive mold and having an annular pattern,
A second conductive portion provided in the well region, having the second conductive mold, and located so as to be surrounded by the first conductive portion.
A low-concentration region of the first conductive type provided between the well region and at least a part of the first conductive portion and having a lower impurity concentration than the first conductive portion.
Semiconductor devices including. The first conductive portion is a rectangular annular pattern having a plurality of portions extending in a first direction and a plurality of portions extending in a second direction intersecting the first direction.
The semiconductor device according to claim 3, wherein the second conductive portion extends in any one of the first direction and the second direction. The semiconductor device according to claim 3 or 4, further comprising a third conductive portion having the second conductive mold and having the first conductive portion and the annular pattern surrounding the second conductive portion.

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