JP2021038334A - Liquid resin composition, semiconductor device, and method for producing semiconductor device - Google Patents

Abstract

To provide a liquid resin composition that readily achieves excellent flowability and curability when it is heated at low temperature to be fluidized and then cured.SOLUTION: A liquid resin composition has an epoxy resin (A) having at least two epoxy groups in one molecule, and a heterocyclic compound (B) having a nitrogen atom. The heterocyclic compound (B) has a reaction initiation temperature of 130°C or higher and 160°C or lower. When the total amount of the epoxy resin (A) and the heterocyclic compound (B) is 100 pts.wt., the amount of the heterocyclic compound (B) is 5 pts.wt. or more and 30 pts.wt. or less.SELECTED DRAWING: Figure 1

Description

The present disclosure relates to a liquid resin composition, a semiconductor device, and a method for manufacturing the semiconductor device. In detail, the liquid resin composition, a semiconductor device including a reinforcing material made from the liquid resin composition, and the semiconductor device. Regarding the manufacturing method.

Conventionally, when a semiconductor chip is mounted on a substrate provided with conductor wiring to manufacture a semiconductor device, a resin composition is injected between the semiconductor chip and a bump electrode and the resin composition is cured to cure the substrate and the semiconductor. Sealing between the chip and the chip is performed.

For example, Patent Document 1 proposes to manufacture a semiconductor device by sealing a semiconductor chip having a protruding electrode on a circuit surface using a liquid resin composition. The liquid resin composition contains an epoxy resin containing two or more epoxy groups in one molecule, and at least two or more kinds of curing agents having flux activity and solid at 25 ° C. and having different melting points. It is disclosed that this liquid resin composition can produce a semiconductor device having excellent connection reliability when joining semiconductor chips under reflow conditions.

Japanese Unexamined Patent Publication No. 2006-143795

By the way, in manufacturing a semiconductor device including a base material and an electronic component such as a semiconductor chip, if the heating temperature at the time of reflow is high, the electronic component having low heat resistance is likely to be damaged. If low melting point solder is used, even for electronic components with relatively low heat resistance, the conductor wiring on the base material and the electronic components can be electrically connected via solder by low temperature reflow, and it can be used for electronic components, etc. It can be less likely to cause damage.

However, when sealing between the base material and the electronic component with resin, if it starts to cure at a low temperature, it becomes difficult to flow during heating, so there is a problem that poor connection between the solder and the terminal in the electronic component is likely to occur. there were. On the other hand, if the fluidity of the resin during heating is ensured, it is difficult to cure at a low temperature, so aftercure is required, which may deteriorate the productivity.

Therefore, the subject of the present disclosure is a liquid resin composition which is easy to realize good fluidity and good curability when it is made to flow by heating at a low temperature and then cured, and is prepared from this liquid resin composition. It is an object of the present invention to provide a semiconductor device provided with a reinforcing material, and a method for manufacturing the semiconductor device.

The liquid resin composition according to one aspect of the present disclosure contains an epoxy resin (A) having at least two epoxy groups in one molecule and a heterocyclic compound (B) having a nitrogen atom. The reaction start temperature of the heterocyclic compound (B) is 130 ° C. or higher and 160 ° C. or lower. The amount of the heterocyclic compound (B) with respect to a total of 100 parts by weight of the epoxy resin (A) and the heterocyclic compound (B) is 5 parts by weight or more and 30 parts by weight or less.

The semiconductor device according to one aspect of the present disclosure includes a base material, a mounting component provided with a bump electrode and mounted on the base material via the bump electrode, and a reinforcing material covering the bump electrode. The reinforcing material is made of a cured product of the liquid resin composition.

In the method for manufacturing a semiconductor device according to one aspect of the present disclosure, the liquid resin composition is interposed on the surface of the base material provided with the conductor wiring where the conductor wiring is located, and the mounting component provided with the electrode is formed with the conductor wiring. The electrodes are arranged so as to face each other via solder. The manufacturing method includes a heating step of electrically connecting the conductor wiring and the electrode by heating the solder and the liquid resin composition, and curing the liquid resin composition.

According to one aspect of the present disclosure, from a liquid resin composition that easily realizes good fluidity and good curability when it is made to flow by heating at a low temperature and then cured, and the liquid resin composition. A semiconductor device including a reinforcing material to be produced can be obtained.

According to the manufacturing method of one aspect of the present disclosure, it is possible to manufacture a semiconductor device having high curability and excellent solder connectivity of the liquid resin composition.

FIG. 1 is a schematic cross-sectional view showing a first example of the semiconductor device according to the embodiment of the present disclosure. FIG. 2A is a cross-sectional view showing an outline of a second example of the semiconductor device according to the embodiment of the present disclosure. FIG. 2B is a cross-sectional view showing an outline of a third example of the semiconductor device according to the embodiment of the present disclosure. FIG. 2C is a cross-sectional view showing an outline of a fourth example of the semiconductor device according to the embodiment of the present disclosure. FIG. 2D is a cross-sectional view showing an outline of a fifth example of the semiconductor device according to the embodiment of the present disclosure. FIG. 3 is a graph showing an outline of the temperature profile of heating in the reflow process. 4A to 4E are schematic cross-sectional views showing an example of a manufacturing process of the semiconductor device according to the embodiment of the present disclosure.

1. 1. Outline The liquid resin composition of the present embodiment contains an epoxy resin (A) and a heterocyclic compound (B). The epoxy resin (A) has at least two epoxy groups in one molecule. The heterocyclic compound (B) has a nitrogen atom. The reaction start temperature of the heterocyclic compound (B) is 130 ° C. or higher and 160 ° C. or lower. The amount of the heterocyclic compound (B) with respect to a total of 100 parts by weight of the epoxy resin (A) and the heterocyclic compound (B) is 5 parts by weight or more and 30 parts by weight or less. Therefore, the liquid resin composition according to the present embodiment has good fluidity and can be cured at a relatively low temperature. In the present disclosure, "relatively low temperature" means, for example, a temperature of 220 ° C. or lower. 220 ° C. is, for example, the maximum heating temperature in the reflow process when manufacturing a semiconductor device, and the lower limit of the maximum heating temperature is preferably 170 ° C. or higher. In the present embodiment, at a relatively low temperature, solder having a low melting point of, for example, about 110 to 170 ° C. (sometimes referred to as low melting point solder) can be sufficiently melted.

Further, in the liquid resin composition, for example, a mounting component 3 having an electrode 4 having solder such as a bump electrode 41 is mounted on a base material 1 having a conductor wiring 2, and a mounting component 3 having an electrode 4 having solder such as a bump electrode 41 is mounted between the base material 1 and the mounting component 3. In the electrical connection, it is possible to improve the electrical connection between the bump electrode 41 and the conductor wiring 2. That is, in the present embodiment, even if the heating temperature is lowered because the conductor wiring 2 and the electrode 4 are joined via the low melting point solder, the electrical connection reliability can be maintained, and the mounting component 3 and the base material can be maintained. The bump electrode electrically connected to No. 1 can be reinforced by a cured product of the liquid resin composition.

As a result, in the liquid resin composition of the present embodiment, the mounting component 3 is mounted on the base material 1 and the base material 1 is mounted in the reflow process for joining the electrode 4 (bump electrode 41) and the conductor wiring 2. It is possible to reinforce the bump electrode that electrically connects between the mounting component 3 and the mounting component 3. Therefore, in the liquid resin composition, when mounting the mounting component 3 on the base material 1, the time of the post-curing (after-cure) step after reflow can be shortened or the post-curing step can be eliminated, and the mounting process can be shortened. Can contribute to doing so.

The "reaction start temperature" in the present disclosure refers to the heated mixture when 5 parts by weight of the curing accelerator (B) is added to 100 parts by weight of the epoxy resin (A) and the mixture is heated. It means the temperature at the time when the viscosity of the above reaches 10 P · s. The viscosity for specifying the reaction start temperature is measured, for example, by a rheometer of model number MCR302 manufactured by Antonio Par Co., Ltd., and the measurement conditions are described in detail in Examples described later, for example, in a temperature range of 15 ° C. to 180 ° C. Within the range of, the heating rate is 5 ° C./min and the rotation speed is 1 rpm.

The reason why the liquid resin composition of the present embodiment has the above-mentioned properties has not been clarified, but it is presumed to be due to, for example, the following reasons.

The liquid resin composition of the present embodiment can promote the self-polymerization of the epoxy resin (A) by containing the heterocyclic compound (B) when the epoxy resin (A) undergoes self-polymerization due to heat. .. Here, when the amount of the heterocyclic compound (B) is 5 parts by weight or more with respect to the total amount of the epoxy resin (A) and the heterocyclic compound (B), at a relatively low temperature (for example, a temperature of 220 ° C. or lower). Also, the self-polymerization of the epoxy resin (A) is more likely to be promoted, and the reactivity of the liquid resin composition is likely to be improved. Further, when the amount of the heterocyclic compound (B) is 30 parts by weight or less, it is difficult to excessively increase the viscosity of the liquid resin composition at a relatively low temperature. Therefore, it is considered that the liquid resin composition can have high reactivity while having good fluidity.

Further, since the reaction start temperature of the heterocyclic compound (B) is 130 ° C. or higher and 160 ° C. or lower, the fluidity of the liquid resin composition can be maintained even at a relatively low temperature, so that the liquid resin composition can be maintained. Can be easily molded. Further, in this case, when the reinforcing material 50 covering the bump electrode 41 that electrically connects the base material 1 and the mounting component 3 is produced from the liquid resin composition, the temperature is raised to a high temperature such as higher than 220 ° C. It can be molded and cured without heating. Therefore, for example, when electrically connecting the conductor wiring 2 and the electrode 4 provided with the bump electrode 41, even if a low melting point solder of, for example, about 160 ° C. to 170 ° C. is used, the low melting point solder is before being melted. , It is difficult to suddenly increase the viscosity of the liquid resin composition. Therefore, the liquid resin composition does not easily inhibit the melting of the low melting point solder that joins the conductor wiring 2 and the electrode 4. It is considered that this makes it possible to maintain the connectivity when the conductor wiring 2 and the electrode 4 are joined by solder.

The liquid resin composition does not immediately reach the desired curing rate only when the reaction start temperature of the heterocyclic compound (B) is reached, and the cross-linking reaction by self-polymerization of the epoxy resin (A) proceeds. However, the curing rate gradually increases. The "curing rate" referred to here is a "DSC curing rate" described later.

As described above, since the liquid resin composition of the present embodiment has the above-mentioned characteristics, particularly when the semiconductor device 7 is manufactured by flip-chip mounting, the base material 1 and the mounting component 3 mounted on the base material 1 are used. It can be suitably used as a material for reinforcing the bump electrode 41 that electrically connects between them.

2. Details Hereinafter, the liquid resin composition, the semiconductor device, and the method for manufacturing the semiconductor device according to the present embodiment will be specifically described. In the present specification and the drawings, substantially the same components are designated by the same reference numerals, so that duplicate description will be omitted. Further, the embodiment described below is only one of various embodiments of the present disclosure, and various modifications can be made according to the design as long as the object of the present disclosure can be achieved.

2.1. Liquid resin composition As described above, the liquid resin composition contains the epoxy resin (A) and the heterocyclic compound (B). The "liquid resin composition" means that the resin composition is liquid at 25 ° C.

The liquid resin composition of the present embodiment can be used with the base material 1 in producing a semiconductor device 7 including a base material 1 and a mounting component 3 mounted on the base material 1, as shown in FIG. 1, for example. It can be suitably used for producing a reinforcing material 5 for reinforcing a bump electrode that electrically connects to and between the mounting component 3. The cured product of the liquid resin composition is obtained by heat-curing the liquid resin composition.

When the liquid resin composition is heated, the gel time at, for example, 140 ° C. is preferably 180 sec or more. Further, it is also preferable that the liquid resin composition has a gel time of 90 sec or less at 180 ° C. when heated. In particular, it is more preferable that the liquid resin composition has a gel time of 180 sec or more at 140 ° C. and a gel time of 90 sec or less at 180 ° C. when heated. The gel time can be measured by, for example, the following method. First, the stage (pedestal) in a heating device such as a hot plate is heated to 140 ± 2 ° C. Next, 0.1 to 1.0 g of the liquid resin composition is applied onto the stage, and the time measurement is started with the time of application as the starting point (0 seconds). The applied liquid resin composition is agitated with a stirring jig such as a spatula every 1 second after the application. This is repeated, and when the liquid resin composition cannot be stirred or when the liquid resin composition is solidified, the time measurement is completed, and the time elapsed from the start of the measurement to the end of the measurement is obtained as the gel time. Can be done. In the above, the case of measuring the gel time at 140 ° C. has been described, but the present invention is not limited to this, and the same may be applied by appropriately setting the liquid resin composition according to the composition, physical properties, temperature at the desired reflow, and the like. And measure it.

The liquid resin composition is preferably completely cured at a temperature of 150 ° C. or higher and 220 ° C. or lower. The liquid resin composition of the present embodiment has a DSC curing rate of 70% or more, particularly when cured under the conditions of a heating temperature of 160 ° C. and a heating time of 180 seconds at a heating temperature of 160 ° C. The "DSC curing rate" is a value calculated by measuring by the method shown in the evaluation in the examples described later. The DSC curing rate of the liquid resin composition when cured under the conditions of a heating temperature of 160 ° C. and a heating time of 180 seconds at a heating temperature of 160 ° C. is preferably 80% or more, more preferably 90% or more. preferable. Further, the liquid resin composition has a DSC curing rate of 90% or more when heat-treated under the conditions that the maximum heating temperature is 160 ° C. and the maximum heating temperature is 160 ° C. or higher for a total of 180 seconds. Is more preferable. The maximum heating temperature of the liquid resin composition is not limited to the above, and for example, the DSC curing rate at the maximum heating temperature may be 70% or more, and the maximum heating temperature may be 150 ° C. or higher and 220 ° C. or lower. ..

The glass transition temperature of the cured product of the liquid resin composition is preferably 85 ° C. or higher. In this case, the cured product can have high heat resistance, and therefore, the semiconductor device 7 provided with the reinforcing material 50 made of the cured product can have high heat resistance reliability. The viscosity, gel time, glass transition temperature, etc. of the cured product of the liquid resin composition can be adjusted by appropriately adjusting the types and blending amounts of the components described below, and combinations thereof.

The components that can be contained in the liquid resin composition will be specifically described.

The epoxy resin (A) can impart thermosetting property to the liquid resin composition. The epoxy resin (A) is a compound having two or more epoxy groups in one molecule, and can self-polymerize when heated.

The epoxy resin (A) is not particularly limited as long as it is a compound having two or more epoxy groups in one molecule, but is, for example, an alkylphenol novolac type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin; naphthol. Novorak type epoxy resin; phenol aralkyl type epoxy resin having phenylene skeleton, biphenylene skeleton, etc .; biphenyl aralkyl type epoxy resin; naphthol aralkyl type epoxy resin having phenylene skeleton, biphenylene skeleton, etc .; triphenol methane type epoxy resin, alkyl modified triphenol Polyfunctional epoxy resin such as methane type epoxy resin; Triphenylmethane type epoxy resin; Tetrakissphenol ethane type epoxy resin; Dicyclopentadiene type epoxy resin; Stilben type epoxy resin; Bisphenol A type epoxy resin, Bisphenol F type epoxy resin, etc. Bisphenol type epoxy resin; biphenyl type epoxy resin; naphthalene type epoxy resin; alicyclic epoxy resin; brom-containing epoxy resin such as bisphenol A type brom-containing epoxy resin; Examples thereof include one or more components selected from the group consisting of the obtained glycidylamine type epoxy resin; and the glycidyl ester type epoxy resin obtained by reacting a polybasic acid such as phthalic acid or dimer acid with epichlorohydrin.

The heterocyclic compound (B) contains at least one nitrogen atom in the ring. The heterocyclic compound (B) has a function as a curing accelerator that promotes self-polymerization of the epoxy resin (A). Therefore, the heterocyclic compound (B) has a catalytic function in the reaction (self-polymerization) of the epoxy resin (A), which is a thermosetting component, in the liquid resin composition. The heterocyclic compound (B), which is a curing accelerator, is distinguished from the curing agent (D) described later in that the curing agent (D) binds to the epoxy resin (A) and cures.

The reaction start temperature of the heterocyclic compound (B) is 130 ° C. or higher and 160 ° C. or lower as described above. Therefore, since the fluidity of the liquid resin composition can be maintained even at a relatively low temperature, the liquid resin composition can be easily molded. Further, within this range, the liquid resin composition can be completely cured without being heated to a high temperature such as a temperature higher than 220 ° C. The reaction start temperature of the heterocyclic compound (B) is more preferably 130 ° C. or higher and 150 ° C. or lower.

The heterocyclic compound (B) preferably contains a compound having an imidazole skeleton. In this case, the self-polymerization of the epoxy resin (A) in the liquid resin composition is further promoted, and the curability of the liquid resin composition can be further improved. In particular, it is excellent in curability when the bump electrode 41 between the base material 1 and the mounting component 3 is covered with the liquid resin composition to reinforce it by applying the reflow profile shown in FIG. 3, which will be described later.

As described above, the amount of the heterocyclic compound (B) with respect to a total of 100 parts by weight of the epoxy resin (A) and the heterocyclic compound (B) is 5 parts by weight or more and 30 parts by weight or less. Within this range, when the liquid resin composition is heated, it has good fluidity at a temperature below the melting point of the low melting point solder and is good at a temperature above the melting point of the low melting point solder and 220 ° C. or less. Can have curability. The amount of the heterocyclic compound (B) is more preferably 10 parts by weight or more and 20 parts by weight or less.

The liquid resin composition may contain a curing accelerator other than the heterocyclic compound (B).

In the present embodiment, the liquid resin composition further contains the flux (C). The flux (C) preferably has at least two carboxyl groups in one molecule. Further, the melting point of the flux (C) is preferably 120 ° C. or lower. In this case, when the bump electrode 41 between the bump electrode 41 and the mounting component 3 such as the semiconductor element mounted on the base material 1 is reinforced with the liquid resin composition, the oxide film on the surface of the bump electrode 41 can be removed at the time of reflow. .. Thereby, better connection reliability between the mounting component 3 and the base material 1 can be ensured. In particular, when the melting point of the flux (C) is 120 ° C. or lower, the mounting component 3 is mounted on the base material 1 and the bump electrode 41 between the base material 1 and the mounting component 3 is covered with the liquid resin composition, which will be described later. Even when heated with the temperature profile, the liquid resin composition can be cured, and high connection reliability between the mounting component 3 and the base material 1 can be ensured.

The flux (C) is, for example, sebacic acid, abietinic acid, glutaric acid, succinic acid, malonic acid, oxalic acid, adipic acid, pimelic acid, suberic acid, azelaic acid, diglycolic acid, thiodiglycolic acid, phthalic acid, isophthal. It can contain one or more compounds selected from the group consisting of acid, terephthalic acid, propantricarboxylic acid, citric acid, benzoic acid and tartaric acid.

When the liquid resin composition contains the flux (C), the amount of the flux (C) is 5% by weight based on the total amount of the epoxy resin (A), the heterocyclic compound (B) and the flux (C). It is preferably 20% by weight or more. When the amount of the flux (C) is 5% by weight or more and 20% by weight or less, it is difficult to inhibit the curing of the liquid resin composition. Therefore, when the bump electrode 41 interposed between the base material 1 and the mounting component 3 is covered with the cured product of the liquid resin composition, the liquid resin composition can be cured satisfactorily, and the base material 1 and the mounting component 3 Can improve the electrical connectivity of.

It is also preferable that the liquid resin composition further contains the curing agent (D). In particular, when the liquid resin composition contains the flux (C), if the curing agent (D) is contained, the flux (C) can be difficult to separate in the liquid resin composition, and the uniformity of the liquid resin composition can be improved. Easy to raise.

Examples of the curing agent (D) include a phenolic curing agent (D1). Specifically, examples of the phenol-based curing agent (D1) include novolak-type resins such as phenol novolac resin, cresol novolak resin, and naphthol novolak resin; dicyclopentadiene-type phenol novolac resin, dicyclopentadiene-type naphthol novolac resin, and the like. At least one component selected from the group consisting of cyclopentadiene-type phenol resins; terpene-modified phenol resins; bisphenol-type resins such as bisphenol A and bisphenol F; and triazine-modified novolak resins can be mentioned.

When the liquid resin composition contains the curing agent (D), the content of the curing agent (D) is preferably 1% by weight or more and 20% by weight or less with respect to the total amount of the liquid cured resin composition. When the amount of the curing agent (D) is 1% by weight or more, the uniformity of the liquid resin composition can be more easily increased, and when the amount of the curing agent (D) is 20% by weight or less, the liquid resin composition It is possible to maintain good uniformity and curability when the liquid resin composition is heated. The amount of the curing agent (D) is more preferably 5% by weight or more and 15% by weight or less.

The liquid resin composition may contain components other than the components described above. For example, the liquid resin composition can contain additives. Examples of additives include inorganic fillers, viscosity modifiers, silane coupling agents, defoaming agents, leveling agents, low stress agents, pigments and the like.

The liquid resin composition can be obtained, for example, by blending the above components, adding an appropriate solvent as necessary, and mixing them. Specifically, the liquid resin composition can be prepared, for example, by the following method.

First, a mixture is obtained by simultaneously or sequentially blending the components that can be contained in the liquid resin composition described above. This mixture is stirred and mixed while performing heat treatment and cooling treatment as necessary. Next, if necessary, an additive is added to this mixture, and the mixture is stirred again and mixed until uniformly dispersed while performing heat treatment and cooling treatment as necessary. Thereby, a liquid resin composition can be obtained. For stirring the mixture, for example, a disper, a planetary mixer, a ball mill, a three-roll, a bead mill and the like can be applied in an appropriate combination as necessary.

The liquid resin composition can be molded into, for example, a sheet or a paste. For example, when the mounting component 3 is mounted on the base material 1 by the flip chip method, if the liquid resin composition is in the form of a sheet, the sheet-shaped liquid resin composition is superposed on the mounting component 3 and is based on the mounting component 3. It can be mounted while aligning from above the material 1. Further, the mounting component 3 may be mounted while aligning the mounting component 3 from above the base material 1 with the sheet-shaped liquid resin composition stacked on the base material 1. Therefore, the liquid resin composition can be used as a pre-supply type reinforcing material 50 for reinforcing the bump electrode 41 interposed between the base material 1 and the mounting component 3. Further, as shown in FIG. 1, the reinforcing material 50 may be an underfill material that seals the gap by filling the entire gap between the base material 1 and the mounting component 3.

The cured product obtained by thermosetting the liquid resin composition covers the bump electrode 41 that electrically connects the base material 1 and the mounting component 3 in the semiconductor device 7, and reinforces the bump electrode 41 (FIG. 5). 1. Suitable as (see FIGS. 2A to 2D). As shown in FIG. 1, the reinforcing material 50 can function as a material for sealing the gap, that is, a sealing material 5, by filling the entire gap between the base material 1 and the mounting component 3. A semiconductor device 7 including such a reinforcing material 50 will be described.

2.2. Semiconductor device FIGS. 1 and 2A to 2D show an example of a specific shape of the reinforcing material 50 in the semiconductor device 7 of the present embodiment.

In the first example shown in FIG. 1, the semiconductor device 7 includes a base material 1, a mounting component 3, and a reinforcing material 50 (sealing material 5). The mounting component 3 includes a bump electrode 41 and is mounted on the base material 1 via the bump electrode 41. The reinforcing material 50 covers the bump electrode 41. The reinforcing material 50 is made of a cured product of the liquid resin composition described above.

Specifically, in FIG. 1, the mounting component 3 is provided with a bump electrode 41 on a surface facing the base material 1, while the base material 1 is provided with a conductor wiring 2 on a surface facing the mounting component 3. The bump electrode 41 and the conductor wiring 2 are aligned and connected via a solder bump 6 or a solder paste 61 or the like. The bump electrode 41 and the conductor wiring 2 are embedded in the sealing material 5. The sealing material 5 is a so-called underfill.

The base material 1 is a substrate for supporting the mounting component 3. The base material 1 includes, for example, a lead frame, a wiring board, and the like, specifically, for example, a mother substrate and a package substrate. In the present embodiment, the base material 1 is an insulating base material 1 made of glass epoxy, polyimide, polyester, ceramic, etc., and a conductor wiring 2 made of a conductor such as copper formed on the base material 1. And.

The mounting component 3 is a component used in the semiconductor device 7 mounted on the base material 1. The mounting component 3 is, for example, a semiconductor element mounted face-down on the base material 1 in the semiconductor device 7. Specifically, the mounting component 3 is a semiconductor element such as a BGA (Ball Grid Array), a CSP (Chip-Scale Package), a PGA (Pin Grid Array), or an LGA (Line Grid Array) provided with an appropriate IC chip; It includes electronic components such as interposers such as a through silicon via having a through electrode formed on a glass substrate and a through silicon via having a through electrode formed on a silicon substrate. The mounting component 3 may include, for example, an electrode 4.

The electrode 4 includes, for example, a bump electrode 41, a through electrode (not shown), a terminal (for example, an aluminum pad), and the like. When the mounting component 3 is a semiconductor element, the electrode 4 may be provided with, for example, a bump electrode 41. When the mounting component 3 is, for example, an interposer, an appropriate through electrode may be provided as the electrode 4, for example. Specifically, the mounting component 3 includes an interposer such as a glass through electrode having a through electrode formed on a glass substrate, a through silicon via having a through electrode formed on a silicon substrate, and the like.

The reinforcing material 50 can be produced from the liquid resin composition by a known molding method such as a transfer molding method, a compression molding method, or an injection molding method.

Further, the mounting component 3 may have a bump electrode 41 connected to the above circuit on one surface of a silicon wafer including a circuit formed by an appropriate method such as a photolithography method. For example, the electrode 4 (bump electrode 41) in the mounting component 3 may include the solder bump 6. The solder bump 6 may be provided not on the bump electrode 41 but on the conductor wiring 2 on the base material 1, and each of the bump electrode 41 and the conductor wiring 2 may be provided with the solder bump 6. Further, a solder paste 61 may be formed on either one or both of the electrode 4 and the conductor wiring 2 instead of the solder bump 6 (see FIG. 4A). That is, at least one of the electrode 4 in the mounting component 3 and the conductor wiring 2 in the base material 1 may be provided with a solder material.

The solder materials such as the solder bump 6 and the solder paste 61 are made of lead-free solder having a melting point of 110 ° C. or higher and a melting point of 170 ° C. or lower, such as Bi58Sn42 (melting point 139 ° C.) and Sn52In (melting point 120 ° C.).

Further, in the second to fourth examples shown in FIGS. 2A to 2D, the semiconductor device 7 includes a base material 1, a mounting component 3, and a reinforcing material 50. The mounting component 3 includes a bump electrode 41 and is mounted on the base material 1 via the bump electrode 41. The reinforcing material 50 covers the bump electrode 41. The reinforcing material 50 is made of a cured product of the liquid resin composition described above. The reinforcing material 50 partially fills the gap between the base material 1 and the mounting component 3.

In the second example shown in FIG. 2A, the reinforcing material 50 is arranged on the base material 1, and there is a gap between the reinforcing material 50 and the mounting component 3 in the semiconductor device 7. The reinforcing material 50 covers the conductor wiring 2 and covers a part of the bump electrode 41 that is joined to the conductor wiring 2. As a result, the base material 1 covers a part of the bump electrode 41 and covers the joint between the bump electrode 41 and the conductor wiring 2.

In the third example shown in FIG. 2B, the semiconductor device 7 includes a plurality of reinforcing members 50. Each reinforcing member 50 is provided on each bump electrode 41. The reinforcing material 50 covers the entire bump electrode 41 and also covers the conductor wiring 2. As a result, the reinforcing material 50 covers the entire bump electrode 41 and covers the joint between the bump electrode 41 and the conductor wiring 2.

In the fourth example shown in FIG. 2C and the fifth example shown in FIG. 2D, the semiconductor device 7 also includes a plurality of reinforcing members 50. Each reinforcing member 50 is provided on each bump electrode 41. The reinforcing material 50 covers the conductor wiring 2 and covers a part of the bump electrode 41 that is joined to the conductor wiring 2. As a result, the reinforcing material 50 covers a part of the bump electrode 41 and covers the joint between the bump electrode 41 and the conductor wiring 2. In the fourth example shown in FIG. 2C, the reinforcing material 50 covers the entire solder bump 6 in the bump electrode 41, and in the fifth example shown in FIG. 2D, the reinforcing material 50 is the solder bump in the bump electrode 41. It covers a part of 6.

(Modification example)
In FIG. 1, the semiconductor device 7 has described the base material 1 provided with the conductor wiring 2 and the mounting component 3 provided with the bump electrode 41, but the base material 1 is not limited to this, and the base material 1 has an electrode 4 such as a bump electrode 41. You may have. When the mounting component 3 is an interposer substrate, the base material 1 is coated with solder paste 61, and the conductor wiring 2 on the base material 1 and the electrode 4 in the interposer, which is the mounting component 3, are soldered (solder). It is electrically connected via the paste 61), and the gap between the base material 1 and the interposer can be sealed with a cured product of the liquid resin composition. Further, the cured product of the liquid resin composition may be a reinforcing material 50 that covers the electrode 4 and the solder paste 61 in the interposer, which is the mounting component 3.

2.3. Manufacturing Method of Semiconductor Device The manufacturing method of the semiconductor device 7 of the present embodiment will be described. The semiconductor device is not limited to the manufacturing method described below, and an appropriate method may be manufactured as long as the effects of the present disclosure are not impaired.

In the method for manufacturing the semiconductor device 7 of the present embodiment, the mounting component 3 provided with the electrode 4 is provided with the liquid resin composition described above interposed on the surface of the base material 1 provided with the conductor wiring 2 with the conductor wiring 2. The step of arranging the conductor wiring 2 and the electrode 4 so as to face each other via solder is included. Further, the present manufacturing method includes a heating step of electrically connecting the conductor wiring 2 and the electrode 4 by heating and curing the liquid resin composition.

Here, a particularly preferable reflow profile (sometimes referred to as a temperature profile) in the heating step in manufacturing the semiconductor device 7 of the present embodiment will be described. The liquid resin composition described above is particularly suitable for manufacturing the semiconductor device 7 by heat treatment by reflow based on the reflow profile shown in FIG. That is, when the liquid resin composition is heat-treated based on the temperature profile of FIG. 3, for example, the conductor wiring 2 on the base material 1 including the conductor wiring 2 and the bump electrode of the mounting component 3 including the bump electrode 41 The 41 can be joined, and a part or all of the gap between the base material 1 and the mounting component 3 can be covered with a cured product of the liquid resin composition. However, although FIG. 3 shows a temperature profile showing the relationship between a specific temperature and a specific time, the reflow process in the manufacture of the semiconductor device 7 of the present disclosure is not limited to this temperature profile. The temperature profile depends on, for example, the composition of the base material 1, the mounting component 3, and the solder material to be reflowed, and the liquid resin composition covering the bump electrode 41 that electrically connects the base material 1 and the mounting component 3. It can be changed as appropriate.

FIG. 3 is a graph showing an example of the relationship between temperature (vertical axis) and time (time). For example, a mounting component 3 such as a semiconductor element having a bump electrode 41 is mounted on a base material 1 having a conductor wiring 2. It is a temperature profile that can be applied when performing a reflow process of joining via solder. The heating or cooling of the temperature profile shown in FIG. 3 may include the following first to sixth steps (see (a) to (f) in FIG. 3) in order.

In the first step ((a) in FIG. 3), heating is performed from 25 ° C. to 125 ° C. in about 30 seconds from the start of heating. The rate of temperature rise in the first step can be, for example, about 1 ° C./sec to 10 ° C./sec, but the rate of temperature rise may be appropriately set. In the first step, for example, the solder is heated to a temperature lower than the melting point of the low melting point solder.

In the second step ((b) in FIG. 3), the temperature reached in the first step is maintained in an arbitrary temperature range of 100 ° C. to 130 ° C. for about 30 seconds to 120 seconds. In the second step, when mounting the mounting component 3 on the base material 1, for example, before the solder (low melting point solder) starts melting, the base material 1, the mounting component 3, the solder paste 61, the liquid resin composition, and the like are used. The temperature of the low melting point solder is maintained at a temperature equal to or lower than the melting point of the low melting point solder, and the heat in the base material 1 is made uniform.

In the third step ((c) in FIG. 3), the temperature reached in the second step is heated to 160 ° C. to 170 ° C. in about 10 to 15 seconds. The heating rate in the third step can be about 0.1 ° C./sec to 10 ° C./sec. In the third step, the temperature rises in a short time, so that the low melting point solder can melt. Therefore, in the third step, when the mounting component 3 is mounted on the base material 1, the conductor wiring 2 of the base material 1 including the conductor wiring 2 and the bump electrode 41 of the mounting component 3 are electrically connected. ..

In the fourth step ((d) in FIG. 3), the temperature reached in the third step is heated to 175 to 185 ° C. in about 60 seconds. In the first to sixth steps, the maximum heating temperature is in the fourth step, but the maximum temperature reached is preferably 220 ° C. or lower, more preferably 200 ° C. or lower. In FIG. 3, the maximum temperature reached in the fourth step is about 183 ° C, but the temperature is not limited to this. In the fourth step, when the mounting component 3 is mounted on the base material 1, for example, the reaction of the liquid resin composition between the base material 1 and the mounting component 3 continues to proceed to thicken and begin to cure. The temperature may be raised to the maximum temperature at the same heating rate without distinguishing between the third step and the fourth step.

In the fifth step ((e) in FIG. 3), the temperature reached in the fourth step is maintained for about 30 seconds. The time maintained in the fifth step is not limited to this, and may be appropriately adjusted according to the curing rate of the liquid resin composition, etc., but may be 30 seconds or less, or 30 seconds or more. Good.

In the sixth step ((f) in FIG. 3), the temperature maintained in the fifth step is cooled to 125 ° C. in about 150 seconds. In the sixth step, the entire semiconductor device 7 is cooled by cooling the cured product of the completely cured liquid resin composition. The temperature at which cooling is completed and the temperature lowering rate are not limited to this, and can be changed as appropriate.

In FIG. 3, the time from the start of heating in the first step to the end of heating (or the end of cooling) in the sixth step is, for example, about 360 seconds.

Further, when mounting the mounting component 3 on the base material 1 by applying the temperature profile having the first to sixth steps described above, the mounting component 3 may be heated or pressurized before and after heating.

As described above, in the reflow prefile shown in FIG. 3, the conductor wiring 2 on the base material 1 and the bump electrode 41 of the mounting component 3 are joined, and the bumps interposed between the base material 1 and the mounting component 3 are interposed. When the liquid resin composition of the present embodiment is used to cover the electrode 41, both electrical connection and reinforcement of the bump electrode 41 can be performed at the same time. Therefore, when the liquid resin composition of the present embodiment is used, the manufacturing process (process time) for manufacturing the semiconductor device 7 can be shortened.

An example of a method for manufacturing the semiconductor device 7 will be described in more detail with reference to FIGS. 4A to 4E.

4A to 4E show an example of a specific manufacturing method of the semiconductor device 7.

First, as shown in FIG. 4A, a base material 1 provided with the conductor wiring 2 is prepared. A solder paste 61 is produced by applying a solder material on the conductor wiring 2 on the base material 1. An appropriate method can be adopted for producing the solder paste 61 on the conductor wiring 2, and examples thereof include a method of applying a mask so that the solder paste 61 is formed at the position of the conductor wiring 2 and printing. ..

Subsequently, the liquid resin composition is applied so as to cover the base material 1, and if necessary, it is dried by heating to prepare a paste of the liquid resin composition (coating product 51 of the liquid resin composition). The liquid resin composition is not limited to the paste, and may be injected so as to cover the base material 1 in a liquid state.

Next, the mounting component 3 is mounted on the base material 1 by flip-chip mounting with a liquid resin composition (or a dried product thereof or a paste-like product) interposed between the base material 1 and the mounting component 3. .. In the present embodiment, as shown in FIGS. 4B to 4E, mounting is performed as follows using a flip chip bonder 70 including a bonding head 71 and a stage 72. Hereinafter, the case where the mounting component 3 includes the bump electrode 41 will be described, but the present invention is not limited to this, and the mounting component 3 can be applied to an interposer or the like which does not have the bump electrode 41. An example of a specific device for the flip chip bonder 70 is a device such as FCB3 manufactured by Panasonic Corporation.

As shown in FIG. 4B, the bonding head 71 supports the base material 1 provided with the conductor wiring 2 on the stage 72, and the bump electrode 41 of the mounting component 3 faces the base material 1 supported on the stage 72. To hold. Further, the coated material 51 of the liquid resin composition is coated on the base material 1 and is interposed between the base material 1 and the mounting component 3. In this state, the bonding head 71 is moved toward the stage 72 as shown in FIG. 4B. As a result, the mounting component 3 is arranged on the base material 1 with the liquid resin composition (for example, the coated material 51 of the liquid resin composition) interposed therebetween. At this time, the mounting component 3 and the base material 1 are aligned so that the bump electrode 41 of the mounting component 3 and the solder paste 61 produced on the conductor wiring 2 of the base material 1 overlap each other (see FIG. 4C). When the liquid resin composition is injected onto the base material 1 so as to cover the base material 1 in a liquid state, the base material 1 and the mounting component 3 are aligned before the base material 1 is placed. The liquid resin composition may be injected and interposed between the mounting component 3 and the mounting component 3.

In this state, a heating step of heating the solder paste 61 and the liquid resin composition is performed through the bonding head 71 and the stage 72. In the heating step of the present embodiment, the temperature profile shown in FIG. 3 described above is applied and heated in the state shown in FIG. 4C. The heating step preferably includes a first heating step and a second heating step. The first heating step is a step of heating to a temperature equal to or lower than the melting point of solder such as solder paste 61.

The first heating step can correspond to the steps (first to third steps) shown in (a) to (c) in the temperature profile shown in FIG. In the first heating step, the reaction initiation temperature of the heterocyclic compound (B) in the liquid resin composition can be reached by the third step. In the third step, the liquid resin composition does not cure rapidly, and an excessive increase in viscosity is unlikely to occur. The second heating step is a step of heating the solder to a melting point or higher and a maximum heating temperature or lower. The maximum heating temperature is preferably 220 ° C. or lower. The temperature profile shown in FIG. 3 can correspond to the steps (fourth and fifth steps) shown in (d) to (e). From the third step to the initial stage of temperature rise in the fourth step, since an excessive increase in viscosity due to the reaction of the liquid resin composition is unlikely to occur, the solder paste 61 melts and the conductor wiring 2 and the electrode 4 are connected to each other. It is less likely to interfere with electrical connection. Then, in the fourth step, the conductor wiring 2 and the electrode 4 are electrically connected. Subsequently, in the fifth step, the curing of the liquid resin composition interposed between the base material 1 and the mounting component 3 proceeds, and the cured product of the liquid resin composition between the base material 1 and the mounting component 3 progresses. It is sealed.

In the heating step, the time for heating to a temperature of 160 ° C. or higher and 220 ° C. or lower is preferably 180 seconds or less. In this case, since the semiconductor device 7 can be manufactured in a short time, the production efficiency can be improved. The heating temperature is appropriately set according to the composition of the solder paste 61 and the composition of the liquid resin composition, or according to the reaction start temperature of the heterocyclic compound (B) in the liquid resin composition.

Further, when the liquid resin composition, the mounting component 3 and the base material 1 are heated through the bonding head 71 and the stage 72, the base material 1, the mounting component 3, and the liquid resin composition on the stage 72 are heated by the bonding head 71. May be loaded. For example, the flip-chip bonder 70 is configured so that, for example, the bonding head 71 can pressurize in the direction of the stage 72, whereby the liquid resin composition is interposed between the base material 1 and the mounting component 3. A load can be applied by pressing the bonding head 71 in this state. The load conditions may be set as appropriate.

When the solder paste 61 and the liquid resin composition are heated with the liquid resin composition interposed between the base material 1 and the mounting component 3, the solder paste 61 first melts and the bump electrode 41 And the conductor wiring 2 are electrically connected. Subsequently, after the liquid resin composition is melted, the reaction is started, the viscosity is gradually increased, and the thermosetting is thermally cured to form the reinforcing material 50 as shown in FIG. 4D, whereby the mounting component 3 is formed. The bump electrode 41 between the base material 1 and the base material 1 is covered with the reinforcing material 50.

Subsequently, as shown in FIG. 4E, the bonding head 71 is moved upward and separated from the mounting component 3.

As described above, by mounting the mounting component 3 on the base material 1, the semiconductor device 7 shown in FIG. 1A can be obtained. As described above, in the present embodiment, even if the heating temperature is relatively low, the bump electrode 41 interposed between the base material 1 and the mounting component 3 can be covered with the reinforcing material 50. In the method for manufacturing the semiconductor device 7 of the present embodiment, the liquid is used as a reinforcing material 50 for reinforcing the bump electrode 41 that electrically connects the base material 1 and the mounting component 3 mounted on the base material 1. By using the resin composition, even in the mounting method by thermocompression bonding, the time of the after-cure process for curing can be shortened after the reflow process, or the post-curing process can be eliminated, so that the production efficiency is improved. it can. In particular, when the gap between the base material 1 and the mounting component 3 is covered with the liquid resin composition, if the reflow step is carried out with the temperature profile as shown in FIG. 3, the improvement in production efficiency is remarkable.

In FIGS. 4A to 4E and the above description, the liquid resin composition is applied to the base material 1 in advance, but the present invention is not limited to this. For example, the liquid resin composition may be formed into a sheet and then interposed between the base material 1 and the mounting component 3. For example, a sheet-like liquid resin composition may be interposed between the base material 1 and the mounting component 3 in a state where the base material 1 is arranged on the stage 72 and the mounting component 3 is held by the bonding head 71. .. Further, the mounting component 3 may be mounted from above the base material 1 in a state where the sheet-shaped liquid resin composition is stacked on the mounting component 3 and held by the bonding head 71. Further, in the above description, a case where the reinforcing material 50 (sealing material 5) is manufactured from the liquid resin composition to manufacture the semiconductor device 7 is given as an example. For example, from the liquid resin composition, FIGS. 2A to 2A. It is also applicable to the case where the reinforcing material 50 that covers a part or all of the bump electrode 41 shown in 2D is manufactured to manufacture the semiconductor device 7.

In the semiconductor device 7 shown in FIGS. 1, 2A to 2D, and 4F, the mounted components 3 to be stacked are one-stage, but the number of the mounted components 3 is not limited to this, and the number of the mounted components 3 depends on the purpose, application, and the like. Can be set as appropriate.

In the method for manufacturing the semiconductor device 7 of the present embodiment, the reinforcing material 50 covering the bump electrode 41 interposed between the base material 1 and the mounting component 3 is made of the liquid resin composition described above, so that it is relatively relatively It is possible to cure the liquid resin composition at a low temperature. Further, in particular, by applying the reflow profile as shown in FIG. 3, it is possible to cure the liquid resin composition and electrically connect the conductor wiring 2 of the base material 1 to the mounting component 3. As a result, simultaneous curing can be realized in the reflow process, which can contribute to the improvement of the production efficiency of the semiconductor device 7.

Further, in the present embodiment, since reflow at a relatively low temperature is possible, it is also applicable to the case of adopting a semiconductor device and mounting components having a low heat resistant temperature.

1. 1. Preparation of liquid resin composition [Examples 1 to 13 and Comparative Examples 1 to 5]
The components shown in Tables 1 and 2 below are put into a planetary mixer at the blending ratio (parts by weight) shown in Tables 1 and 2 and mixed by stirring to uniformly disperse the liquid resin composition. It was.

The reaction start temperature of the curing accelerator in each Example and Comparative Example was calculated by measuring the viscosity of the mixed mixture as follows.

A sample was prepared by mixing 100 parts by weight of the component described in column (A) and 5 parts by weight of the component described in column (B). The viscosity of this sample was measured with a rheometer (model number MCR302 manufactured by Antonio Par) under the conditions of a heating rate of 5 ° C./min, a temperature range of 15 ° C. to 180 ° C., and a rotation speed of 1 rpm. Then, the temperature at which the viscosity reached 10 Pa · s was defined as the reaction start temperature of the curing accelerator.

Details of each component shown in Tables 1 and 2 are as follows.
-Epoxy resin A1: Bisphenol A type epoxy resin (manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. Product name: Epototo (YD-8125)).
-Epoxy resin A2: Biphenyl novolac epoxy resin (manufactured by Nippon Kayaku Co., Ltd., product name: NC-3000).
-Curing accelerator B1: imidazole compound (product name: Curesol 2P4MHZ-PW manufactured by Shikoku Chemicals Corporation). Reaction start temperature 151 ° C.
-Curing accelerator B2: Imidazole compound (Product name: Curesol 2MAOK-PW, manufactured by Shikoku Chemicals Corporation). Reaction start temperature 131 ° C.
-Curing accelerator B3: Imidazole compound (Product name: Curesol C11ZCN manufactured by Shikoku Chemicals Corporation). Reaction start temperature 134 ° C.
-Curing accelerator B4: imidazole compound (product name: Curesol 2E4MZ manufactured by Shikoku Kasei Kogyo Co., Ltd.). Reaction start temperature 110 ° C.
-Curing accelerator B5: Imidazole compound (Product name: Curesol 2PHZ manufactured by Shikoku Chemicals Corporation). Reaction start temperature 166 ° C.
-Flux C1: Glutaric acid (manufactured by Tokyo Chemical Industry Co., Ltd.). Melting point 98 ° C.
-Flux C2: Adipic acid (manufactured by Wako Pure Chemical Industries, Ltd.). Melting point 151-154 ° C.
-Curing agent D1: Phenol resin (manufactured by Meiwa Kasei Co., Ltd., product name: MEH-8000H).

2. Evaluation test 2.1. Simultaneous reflow curability Weigh 10 mg of the liquid resin composition prepared above, place it on an aluminum pan for thermal analysis, and under the conditions of the reflow profile (see FIG. 3) shown below, a differential scanning calorimeter (DSC). Measuring device: Hitachi High-Tech Science Co., Ltd. model number DSC7000X) was used to measure the change in calorific value obtained when the temperature rise rate was 10 ° C./min from 30 ° C. to 200 ° C. The cured product to be measured was obtained based on the following reflow profile.
(Reflow profile)
・ First step: Temperature rise from 25 ° C to 125 ° C at a heating rate of 3 ° C / sec ・ Second step: Maintained at 125 ° C to 130 ° C for 90 seconds ・ Third step: After maintaining for 90 seconds , Temperature rise to 160 ° C at a temperature rise rate of 2 ° C / sec ・ Fourth step: After reaching 160 ° C, temperature rise to 183 ° C at a temperature rise rate of 0.3 ° C / sec ・ Fifth step: To 183 ° C After reaching, maintain for 30 seconds ・ Sixth step: After maintaining for 30 seconds, cool to 125 ° C at a temperature lowering rate of 0.36 ° C / sec (cooling)
Based on the obtained calorific value measurement results, the degree of curing was calculated based on the following formula.
Curing degree (%) = (ab) / a × 100
a: Calorific value (mJ / mg) of the liquid resin composition before heat treatment
b: Calorific value of cured product (mJ / mg)
From the calculated degree of curing, the simultaneous reflow curability was evaluated as follows, and the results are shown in Table 1.
A: The degree of curing is 95% or more.
B: The degree of curing is 90% or more and less than 95%.
C: The degree of curing is 70% or more and less than 90%.
D: Curing degree is less than 70%.

2.2. Connectivity First, an FR-4 circuit board having a daisy chain electrode (product name: WALTS KIT WLP (S) 300P-2) manufactured by Waltz Co., Ltd. was prepared. The printing mask on the circuit board (Walz Co. KIT WLP_SRT-300P t0.08) Ategai, solder paste (KOKI Co. product name TAB58-M742) the squeegee speed 40 mm / s, the printing pressure (printing pressure) 17 × ^{10 -2} Printing was performed twice under the condition of N. Subsequently, a solder mounting substrate on which solder was mounted by printing was produced under the conditions of the reflow profile shown in FIG.

As an IC chip for mounting, WLP TEG (0.3 mm pitch LGA) manufactured by Waltz was prepared.

Next, 1. The liquid resin composition prepared in 1 above was applied to the solder mounting substrate prepared above, placed on the stage of a flip chip bonder (model number FC3000S manufactured by Toray Engineering Co., Ltd.), and the IC chip for mounting was placed on the bonding head of the flip chip bonder. Was held by. Subsequently, the bonding head was moved from above the substrate toward the stage while aligning the bump electrodes on the IC chip and the conductor wiring on the substrate so as to overlap each other.

Subsequently, based on the reflow profile shown in FIG. 3, the molten solder was connected to the bump electrode and the liquid resin composition was cured by heating. As a result, an IC chip was mounted on the circuit board, and a semiconductor device (semiconductor package) was manufactured in which the circuit board and the IC chip were sealed with a liquid resin composition.

In the obtained semiconductor device, the number of conductive samples out of the five samples was determined by a tester (CUSTOM model number CDM-6000) for each of the four block units connected by a daisy chain for each example and comparative example. After confirmation, evaluation was performed as follows, and the results are shown in Tables 1 and 2.
A: The number of conductions is 5.
B: The number of conductions is 3 to 4.
C: The number of conductions is 1 to 2.
D: The number of conductions is 0.

2.3. Void evaluation A layer (cured product layer) made of a cured product of a liquid resin composition formed between an IC chip and a circuit board by manufacturing a semiconductor package by the same method as in "2.2. Connectivity" above. The presence or absence of voids in) is evaluated as follows by observing the cross section with an ultrasonic flaw detector (Hitachi Power Solutions Co., Ltd. model number Fine SAT), and the results are shown in Tables 1 and 2.
A: The size of voids remaining in the cured product layer is less than 30 μm, and the total area of all residual voids is less than 5% of the area of the semiconductor device.
B: The size of voids remaining in the cured product layer is less than 30 μm, and the total area of all residual voids is 5% or more and less than 30% with respect to the area of the semiconductor device.
D: Regardless of the size of the voids remaining in the cured product layer, the total area of all residual voids is 30% or more with respect to the area of the semiconductor element.

2.4. TCT test (temperature cycle test)
Using the semiconductor package produced in the above "2.2 Connectivity" as a sample, the sample was repeatedly heated and cooled by a temperature cycle test device (model number TSE-12-A manufactured by ESPEC). The heating and cooling cycle conditions are as follows: in the temperature range of -40 ° C to 85 ° C, cool to -40 ° C, maintain at -40 ° C for 30 minutes, and after 30 minutes, raise the temperature to 85 ° C. One cycle was to maintain at 85 ° C. for 30 minutes and then cool again after 30 minutes. The number of cycles at the time when the circumference resistance value of the sample before the test fluctuated by ± 10% or more was measured and evaluated as follows, and the results are shown in Tables 1 and 2. For Comparative Examples 1, 3 and 5 in which the evaluation in "2.2. Connectivity" was "D", the evaluation was set to "-" because a sample for carrying out the test could not be prepared.
A: The volatility is less than ± 10% even after 3000 cycles.
B: The volatility is less than ± 10% even if it exceeds 2500 cycles, but the volatility becomes ± 10% or more after 3000 cycles.
C: The volatility is less than ± 10% even if it exceeds 1500 cycles, but the volatility becomes ± 10% or more after 2500 cycles.
D: The volatility is ± 10% or more in 1500 cycles or less.

1 Base material 2 Conductor wiring 3 Mounting parts 4 Electrodes 41 Bump electrodes 5 Encapsulants 50 Reinforcing materials 6 Solder bumps 7 Semiconductor devices

Claims (11)

An epoxy resin (A) having at least two epoxy groups in one molecule,
Containing a heterocyclic compound (B) having a nitrogen atom,
The reaction start temperature of the heterocyclic compound (B) is 130 ° C. or higher and 160 ° C. or lower.
The amount of the heterocyclic compound (B) with respect to a total of 100 parts by weight of the epoxy resin (A) and the heterocyclic compound (B) is 5 parts by weight or more and 30 parts by weight or less.
Liquid resin composition. Further containing flux (C)
The flux (C) has at least two carboxyl groups in one molecule and has a melting point of 120 ° C. or lower.
The liquid resin composition according to claim 1. The content of the flux (C) with respect to the total amount of the epoxy resin (A), the heterocyclic compound (B) and the flux (C) is 5% by weight or more and 20% by weight or less.
The liquid resin composition according to claim 2. Further containing the curing agent (D),
The liquid resin composition according to any one of claims 1 to 3. The amount of the curing agent (D) with respect to the total amount of the liquid resin composition is 1% by weight or more and 20% by weight or less.
The liquid resin composition according to claim 4. The DSC curing rate is 80% or more when cured under the conditions of a heating temperature of 160 ° C. and a heating time of 180 seconds at a heating temperature of 160 ° C.
The liquid resin composition according to any one of claims 1 to 5. It is used to reinforce a bump electrode that electrically connects a substrate and a mounting component mounted on the substrate.
The liquid resin composition according to any one of claims 1 to 6. With the base material
A mounting component provided with a bump electrode and mounted on the base material via the bump electrode,
A reinforcing material that covers the bump electrode is provided.
The reinforcing material comprises a cured product of the liquid resin composition according to any one of claims 1 to 7.
Semiconductor device. The liquid resin composition according to any one of claims 1 to 7 is interposed on the surface of the base material provided with the conductor wiring on which the conductor wiring is located, and the mounting component provided with the electrode is provided with the conductor wiring and the electrode. And are placed facing each other via solder,
A heating step of electrically connecting the conductor wiring and the electrode by heating the solder and the liquid resin composition and curing the liquid resin composition is included.
Manufacturing method of semiconductor devices. The heating step includes a first heating step of heating below the melting point of the solder and a second heating step of heating above the melting point of the solder and at a maximum heating temperature of 220 ° C. or lower.
The method for manufacturing a semiconductor device according to claim 9. The time for heating to a temperature of 160 ° C. or higher and 220 ° C. or lower in the heating step is 180 seconds or less.
The method for manufacturing a semiconductor device according to claim 9 or 10.

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