JP2021032800A - Height gage - Google Patents

Height gage Download PDF

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Publication number
JP2021032800A
JP2021032800A JP2019155514A JP2019155514A JP2021032800A JP 2021032800 A JP2021032800 A JP 2021032800A JP 2019155514 A JP2019155514 A JP 2019155514A JP 2019155514 A JP2019155514 A JP 2019155514A JP 2021032800 A JP2021032800 A JP 2021032800A
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Prior art keywords
wafer
probe
grinding
height
contact
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JP2019155514A
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Inventor
一史 千嶋
Kazushi Chishima
一史 千嶋
孝世 浦山
Takayo Urayama
孝世 浦山
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2019155514A priority Critical patent/JP2021032800A/en
Priority to KR1020200090275A priority patent/KR20210027071A/en
Priority to CN202010868283.7A priority patent/CN112440170A/en
Priority to TW109129342A priority patent/TW202108970A/en
Publication of JP2021032800A publication Critical patent/JP2021032800A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0046—Column grinding machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B24B41/068—Table-like supports for panels, sheets or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/20—Drives or gearings; Equipment therefor relating to feed movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/02—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness
    • G01B5/06—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness for measuring thickness
    • G01B5/061—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness for measuring thickness height gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/08—Measuring arrangements characterised by the use of mechanical techniques for measuring diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • A Measuring Device Byusing Mechanical Method (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

To prevent discharging of static electricity between a height gage and a wafer.SOLUTION: The invention is configured so that, a measured object in which a protective member S and a wafer W are stuck and integrated, is held to a holding plane 20a of a chuck table 2 so that a top face Wa of the wafer W is an upper side, and a contact piece 510a of a first probe 510 provided on a top face height gage 51 is brought into contact with the top face Wa of the wafer W, for measuring a height of the top face Wa of the wafer W. A surface resistance value of the first probe 510 becomes in a range from 1×104 Ω to 1×109 Ω; therefore, discharging of static electricity between the first probe 510 and the top face Wa of the wafer W, can be prevented when the first probe is caused to approach the top face Wa of the wafer W.SELECTED DRAWING: Figure 2

Description

本発明は、ハイトゲージに関する。 The present invention relates to a height gauge.

ウェーハを研削砥石で研削する研削装置は、特許文献１に開示されているように、ハイトゲージを用いてウェーハの上面高さを測定して、ウェーハの上面の高さが所定の高さになったら研削を終了している。 As disclosed in Patent Document 1, a grinding device that grinds a wafer with a grinding wheel measures the height of the upper surface of the wafer using a height gauge, and when the height of the upper surface of the wafer reaches a predetermined height. Grinding is finished.

ハイトゲージには、接触式ハイトゲージと非接触式ハイトゲージとがある。非接触式ハイトゲージは、研削加工時にウェーハに供給される研削水のミストが測定の妨げとなりウェーハの上面の高さを正確に測定するのが難しく、また正確な値が取れるように対策すると高価な測定器となってしまう。そこで、安価な接触式の測定器を用いることが多い。 The height gauge includes a contact type height gauge and a non-contact type height gauge. Non-contact height gauges are difficult to measure the height of the upper surface of the wafer accurately because the mist of grinding water supplied to the wafer during grinding interferes with the measurement, and it is expensive to take measures to obtain accurate values. It becomes a measuring instrument. Therefore, an inexpensive contact-type measuring instrument is often used.

特開２００８−０７３７８５号公報Japanese Unexamined Patent Publication No. 2008-07378

しかし、接触式ハイトゲージは、そのプローブに静電気が帯電していると、ウェーハにプローブが接触する直前に静電気を放電させることがあり、放電によりウェーハに形成されているデバイスが破損するおそれがある。従って、ウェーハの上面高さを測定する接触式ハイトゲージが静電気を放電しないようにするという課題がある。 However, if the probe of the contact height gauge is charged with static electricity, the static electricity may be discharged immediately before the probe comes into contact with the wafer, and the discharge may damage the device formed on the wafer. Therefore, there is a problem that the contact height gauge that measures the height of the upper surface of the wafer does not discharge static electricity.

本発明は、被測定物の上面にプローブを接触させて、該被測定物の上面高さを測定する接触式のハイトゲージであって、該プローブは、表面抵抗値が１×１０４Ωから１×１０９Ωで構成されていることを特徴とするハイトゲージである。
上記のプローブは、非導電性材料に対して導電性粒子を分散させることによって形成され、該導電性粒子を５０体積％以上１５０体積％以下の配合率で配合したものであることが望ましい。
上記の導電性粒子は、シリコン粒子であることが望ましい。
上記の非導電性材料は、アルミナを含むものであることが望ましい。
上記の非導電性材料は、結合剤を含むものであることが望ましい。 The present invention is a contact-type height gauge that measures the height of the upper surface of the object to be measured by bringing the probe into contact with the upper surface of the object to be measured. The probe has a surface resistance value of 1 × 10 4 Ω to 1. It is a height gauge characterized by being composed of × 10 9 Ω.
The above probe is formed by dispersing conductive particles in a non-conductive material, and it is desirable that the conductive particles are blended in a blending ratio of 50% by volume or more and 150% by volume or less.
The above conductive particles are preferably silicon particles.
It is desirable that the above-mentioned non-conductive material contains alumina.
It is desirable that the non-conductive material described above contains a binder.

本ハイトゲージは、導電性を有するプローブを備えているため、静電気の帯電を抑えることができる。これにより、プローブがウェーハに接触する直前に放電しなくなり、放電によりウェーハに形成されているデバイスが破損するのを防ぐことができる。 Since this height gauge is provided with a conductive probe, it is possible to suppress static electricity charging. As a result, the probe does not discharge immediately before it comes into contact with the wafer, and it is possible to prevent the device formed on the wafer from being damaged by the discharge.

研削装置の全体を表す斜視図である。It is a perspective view which shows the whole of a grinding apparatus. ウェーハの上面に第１プローブを接触させる様子をチャックテーブルの側方からみた断面図である。It is sectional drawing which made the 1st probe come into contact with the upper surface of a wafer as seen from the side of a chuck table.

１ 研削装置
図１に示す研削装置１は、研削手段３を用いてウェーハＷを研削加工する研削装置である。ウェーハＷは半導体ウェーハ等であり、その下面Ｗｂに例えば保護部材Ｓが貼着されてウェーハＷと保護部材Ｓとが一体化されている。以下、研削装置１の構成について説明する。 1 Grinding device The grinding device 1 shown in FIG. 1 is a grinding device that grinds a wafer W by using a grinding means 3. The wafer W is a semiconductor wafer or the like, and for example, a protective member S is attached to a lower surface Wb thereof to integrate the wafer W and the protective member S. Hereinafter, the configuration of the grinding device 1 will be described.

研削装置１は、Ｙ軸方向に延設されたベース１０と、ベース１０の＋Ｙ方向側に立設されたコラム１１とを備えている。 The grinding device 1 includes a base 10 extending in the Y-axis direction and a column 11 erected on the + Y direction side of the base 10.

コラム１１の−Ｙ方向側の側面には、研削手段３を昇降可能に支持する研削送り手段４が配設されている。研削手段３は、Ｚ軸方向の回転軸３５を有するスピンドル３０と、スピンドル３０を回転可能に支持するハウジング３１と、回転軸３５を軸にしてスピンドル３０を回転駆動するスピンドルモータ３２と、スピンドル３０の下端に接続された円環状のマウント３３と、マウント３３の下面に着脱可能に装着された研削ホイール３４とを備えている。
研削ホイール３４は、ホイール基台３４１と、ホイール基台３４１の下面に環状に配列された略直方体形状の複数の研削砥石３４０とを備えており、研削砥石３４０の下面３４０ｂはウェーハＷを研削する研削面となっている。 On the side surface of the column 11 on the −Y direction side, a grinding feed means 4 that supports the grinding means 3 so as to be able to move up and down is arranged. The grinding means 3 includes a spindle 30 having a rotating shaft 35 in the Z-axis direction, a housing 31 that rotatably supports the spindle 30, a spindle motor 32 that rotationally drives the spindle 30 around the rotating shaft 35, and a spindle 30. An annular mount 33 connected to the lower end of the mount 33 and a grinding wheel 34 detachably attached to the lower surface of the mount 33 are provided.
The grinding wheel 34 includes a wheel base 341 and a plurality of substantially rectangular parallelepiped grinding wheels 340 arranged in an annular shape on the lower surface of the wheel base 341, and the lower surface 340b of the grinding wheel 340 grinds the wafer W. It is a ground surface.

研削送り手段４は、Ｚ軸方向の回転軸４５を有するボールネジ４０と、ボールネジ４０に対して平行に配設された一対のガイドレール４１と、回転軸４５を軸にしてボールネジ４０を回転させるＺ軸モータ４２と、内部のナットがボールネジ４０に螺合して側部がガイドレール４１に摺接する昇降板４３と、昇降板４３に連結され研削手段３を支持するホルダ４４とを備えている。 The grinding feed means 4 rotates the ball screw 40 having a rotation shaft 45 in the Z-axis direction, a pair of guide rails 41 arranged parallel to the ball screw 40, and the ball screw 40 about the rotation shaft 45. It includes a shaft motor 42, an elevating plate 43 in which an internal nut is screwed into a ball screw 40 and a side portion is in sliding contact with a guide rail 41, and a holder 44 which is connected to the elevating plate 43 and supports the grinding means 3.

Ｚ軸モータ４２によってボールネジ４０が駆動されて、ボールネジ４０が回転軸４５を軸にして回転すると、これに伴って、昇降板４３がガイドレール４１に案内されてＺ軸方向に昇降移動するとともに、ホルダ４４に保持されている研削手段３が保持面２０ａに垂直な方向（Ｚ軸方向）に移動することとなる。 When the ball screw 40 is driven by the Z-axis motor 42 and the ball screw 40 rotates about the rotation shaft 45, the elevating plate 43 is guided by the guide rail 41 and moves up and down in the Z-axis direction. The grinding means 3 held by the holder 44 moves in the direction perpendicular to the holding surface 20a (Z-axis direction).

研削装置１は、スケールユニット８１を備えている。スケールユニット８１は、ガイドレール４１の−Ｙ方向側の側面に配設されたスケール８１０と、昇降板４３の＋Ｘ方向側の側面、かつスケール８１０に隣接する位置に配設された読み取り部８１１とを備えている。読み取り部８１１は、例えば、スケール８１０に形成された目盛りの反射光を読み取る光学式の認識機構等を有しており、スケール８１０の目盛りを認識することができる。
例えば、読み取り部８１１の高さ位置と研削砥石３４０の下面３４０ｂの高さ位置とが対応付けられており、読み取り部８１１の高さ位置を基にして研削砥石３４０の下面３４０ｂの高さ位置を測定することができる構成となっている。 The grinding device 1 includes a scale unit 81. The scale unit 81 includes a scale 810 arranged on the side surface of the guide rail 41 on the −Y direction side, and a reading unit 811 arranged on the side surface of the elevating plate 43 on the + X direction side and adjacent to the scale 810. It has. The reading unit 811 has, for example, an optical recognition mechanism for reading the reflected light of the scale formed on the scale 810, and can recognize the scale of the scale 810.
For example, the height position of the reading unit 811 and the height position of the lower surface 340b of the grinding wheel 340 are associated with each other, and the height position of the lower surface 340b of the grinding wheel 340 is determined based on the height position of the reading unit 811. It has a structure that can be measured.

ベース１０の上には、チャックテーブル２が配設されている。チャックテーブル２は、例えばポーラス部材等を有する吸引部２０と吸引部２０を支持する枠体２１とを備えている。吸引部２０の上面はウェーハＷが保持される保持面２０ａであり、枠体２１の上面２１ａは保持面２０ａと面一に形成されている。 A chuck table 2 is arranged on the base 10. The chuck table 2 includes, for example, a suction portion 20 having a porous member or the like and a frame body 21 that supports the suction portion 20. The upper surface of the suction portion 20 is a holding surface 20a on which the wafer W is held, and the upper surface 21a of the frame body 21 is formed flush with the holding surface 20a.

ベース１０の内部におけるチャックテーブル２の下方には、例えば、図示しない水平移動手段が配設されている。チャックテーブル２は、水平移動手段によってＹ軸方向に移動可能となっている。 Below the chuck table 2 inside the base 10, for example, a horizontal moving means (not shown) is arranged. The chuck table 2 can be moved in the Y-axis direction by the horizontal moving means.

チャックテーブル２の周囲にはカバー１２及びカバー１２に伸縮自在に連結された蛇腹１３が配設されている。チャックテーブル２がＹ軸方向に移動すると、カバー１２がチャックテーブル２と一体的にＹ軸方向に移動して蛇腹１３が伸縮することとなる。 A cover 12 and a bellows 13 stretchably connected to the cover 12 are arranged around the chuck table 2. When the chuck table 2 moves in the Y-axis direction, the cover 12 moves integrally with the chuck table 2 in the Y-axis direction, and the bellows 13 expands and contracts.

図１に示した研削装置１を用いてウェーハＷの研削加工を行う際には、まず、保護部材Ｓが下面Ｗｂに貼着されているウェーハＷを、保護部材Ｓの下面Ｓｂと保持面２０ａとが当接するようにしてチャックテーブル２の保持面２０ａに載置するとともに、図示しない吸引手段等を用いて保持面２０ａを下から吸引することにより、ウェーハＷを保持面２０ａに吸引保持する。 When grinding the wafer W using the grinding apparatus 1 shown in FIG. 1, first, the wafer W to which the protective member S is attached to the lower surface Wb is attached to the lower surface Sb of the protective member S and the holding surface 20a. The wafer W is sucked and held on the holding surface 20a by placing the wafer W on the holding surface 20a of the chuck table 2 so as to be in contact with the wafer and sucking the holding surface 20a from below using a suction means (not shown) or the like.

そして、保持面２０ａにウェーハＷが保持されている状態で、例えば、図示しない水平移動手段を用いてチャックテーブル２を＋Ｙ方向に移動させて、ウェーハＷを研削手段３の下方に位置づける。 Then, while the wafer W is held on the holding surface 20a, the chuck table 2 is moved in the + Y direction by using, for example, a horizontal moving means (not shown) to position the wafer W below the grinding means 3.

次いで、図示しない回転手段等を用いてチャックテーブル２を回転させることにより、保持面２０ａに吸引保持されているウェーハＷを回転させる。そして、研削手段３のスピンドルモータ３２を用いて、回転軸３５を軸にしてスピンドル３０を回転させることによって、スピンドル３０の下端に接続されている円環状のマウント３３及びマウント３３に連結されている研削砥石３４０を、回転軸３５を軸にして回転させる。 Next, the wafer W sucked and held on the holding surface 20a is rotated by rotating the chuck table 2 using a rotating means (not shown) or the like. Then, the spindle motor 32 of the grinding means 3 is used to rotate the spindle 30 about the rotating shaft 35, so that the spindle 30 is connected to the annular mount 33 and the mount 33 connected to the lower end of the spindle 30. The grinding wheel 340 is rotated around the rotation shaft 35.

研削砥石３４０が回転している状態で、研削送り手段４のＺ軸モータ４２を用いてボールネジ４０を駆動して、回転軸４５を軸にしてボールネジ４０を回転させると、昇降板４３及び昇降板４３にホルダ４４を介して支持されている研削砥石３４０が−Ｚ方向に降下していき、図２に示すように、研削砥石３４０の研削面３４０ａが保持面２０ａに吸引保持されたウェーハＷに当接する。研削面３４０ａがウェーハＷに当接している状態で、さらに、研削砥石３４０をウェーハＷに向かって押し下げていくことによりウェーハＷを研削加工することができる。 When the ball screw 40 is driven by the Z-axis motor 42 of the grinding feed means 4 and the ball screw 40 is rotated around the rotating shaft 45 while the grinding wheel 340 is rotating, the elevating plate 43 and the elevating plate are rotated. The grinding wheel 340 supported by the holder 44 via the holder 44 descends in the −Z direction, and as shown in FIG. 2, the grinding surface 340a of the grinding wheel 340 is attracted to and held by the holding surface 20a on the wafer W. Abut. The wafer W can be ground by further pushing down the grinding wheel 340 toward the wafer W while the grinding surface 340a is in contact with the wafer W.

２ ハイトゲージ
研削装置１は、図１に示すように厚み測定手段５を備えている。厚み測定手段５は、ウェーハＷの上面Ｗａの高さを測定する上面ハイトゲージ５１と、チャックテーブル２の保持面２０ａの高さを測定する保持面ハイトゲージ５２と、上面ハイトゲージ５１及び保持面ハイトゲージ５２を支持する例えば略円筒状の軸部５０とを備えている。 2 The height gauge grinding device 1 includes a thickness measuring means 5 as shown in FIG. The thickness measuring means 5 includes an upper surface height gauge 51 for measuring the height of the upper surface Wa of the wafer W, a holding surface height gauge 52 for measuring the height of the holding surface 20a of the chuck table 2, and an upper surface height gauge 51 and a holding surface height gauge 52. It is provided with, for example, a substantially cylindrical shaft portion 50 that supports it.

上面ハイトゲージ５１は、第１プローブ５１０と第１プローブ５１０の上部に連結され第１プローブ５１０を支持する第１支持部５１１とを備えている。第１プローブ５１０の下端には、ウェーハＷの上面Ｗａ等に接触する第１接触子５１０ａが配設されている。
保持面ハイトゲージ５２は、第２プローブ５２０と第２プローブ５２０の上部に連結され第２プローブ５２０を支持する第２支持部５２１とを備えている。第２プローブ５２０の下端には、枠体２１の上面２１ａ等に接触する第２接触子５２０ａが配設されている。
第１支持部５１１及び第２支持部５２１がそれぞれの基部側を支点として梃子のように上下方向に動くことにより、ウェーハＷの上面Ｗａの高さ位置に応じて第１接触子５１０ａ及び第２接触子５２０ａがＺ軸方向に上下動する。 The upper surface height gauge 51 includes a first probe 510 and a first support portion 511 connected to the upper part of the first probe 510 to support the first probe 510. At the lower end of the first probe 510, a first contact 510a that comes into contact with the upper surface Wa of the wafer W or the like is disposed.
The holding surface height gauge 52 includes a second probe 520 and a second support portion 521 that is connected to the upper part of the second probe 520 and supports the second probe 520. At the lower end of the second probe 520, a second contactor 520a that comes into contact with the upper surface 21a or the like of the frame body 21 is arranged.
The first support portion 511 and the second support portion 521 move in the vertical direction like a lever with the base side as a fulcrum, so that the first contact 510a and the second contact portion 510a and the second support portion 521 are moved according to the height position of the upper surface Wa of the wafer W. The contactor 520a moves up and down in the Z-axis direction.

図２に示すように、上面ハイトゲージ５１に備える第１プローブ５１０は、例えばボルト形状を成しており、小径部５１３と小径部５１３の上端に形成された大径部５１４とを有している。また、第１支持部５１１にはネジ穴５１２が形成されており、第１プローブ５１０の小径部５１３の上部にはネジ穴５１２に対応するネジ切り５１５が形成されている。
第１プローブ５１０の小径部５１３が第１支持部５１１のネジ穴５１２を貫通して、第１支持部５１１のネジ穴５１２に第１プローブ５１０の小径部５１３のネジ切り５１５が形成されている部分が螺合しており、第１プローブ５１０が第１支持部５１１に固定されている。また、第１支持部５１１の第１プローブ５１０に連結されていない側の端部には、軸部５０が連結されている。
なお、保持面ハイトゲージ５２は上面ハイトゲージ５１と同様に構成されており、その説明を省略する。 As shown in FIG. 2, the first probe 510 provided in the upper surface height gauge 51 has, for example, a bolt shape, and has a small diameter portion 513 and a large diameter portion 514 formed at the upper end of the small diameter portion 513. .. Further, a screw hole 512 is formed in the first support portion 511, and a thread cutting 515 corresponding to the screw hole 512 is formed in the upper portion of the small diameter portion 513 of the first probe 510.
The small diameter portion 513 of the first probe 510 penetrates the screw hole 512 of the first support portion 511, and the thread cutting 515 of the small diameter portion 513 of the first probe 510 is formed in the screw hole 512 of the first support portion 511. The portions are screwed together and the first probe 510 is fixed to the first support portion 511. Further, a shaft portion 50 is connected to an end portion of the first support portion 511 that is not connected to the first probe 510.
The holding surface height gauge 52 is configured in the same manner as the upper surface height gauge 51, and the description thereof will be omitted.

また、図２に示すように、例えば上面ハイトゲージ５１は、アースＥに電気的に接続されている。 Further, as shown in FIG. 2, for example, the upper surface height gauge 51 is electrically connected to the ground E.

第１プローブ５１０の表面抵抗値は１×１０４Ωから１×１０９Ωまでの範囲に含まれる。 The surface resistance value of the first probe 510 is included in the range of 1 × 10 4 Ω to 1 × 10 9 Ω.

第１プローブ５１０は、非導電性材料に対して、導電性粒子を分散させることによって形成されたものであり、非導電性材料に対する導電性粒子の配合率を５０体積％以上１５０体積％以下にして配合したものである。 The first probe 510 is formed by dispersing the conductive particles with respect to the non-conductive material, and makes the blending ratio of the conductive particles with respect to the non-conductive material 50% by volume or more and 150% by volume or less. It is a compounded product.

上記の導電性粒子はシリコン粒子であり、上記の非導電性材料はアルミナである。また、非導電性材料は、結合材を含んでいる。 The conductive particles are silicon particles, and the non-conductive material is alumina. The non-conductive material also includes a binder.

上面ハイトゲージ５１を用いて被測定物Ｕの上面の高さを測定する際には、被測定物Ｕの保護部材Ｓの下面Ｓｂを下にしてチャックテーブル２の保持面２０ａに載置してから、図示しない吸引手段等により、保護部材Ｓを下から吸引して被測定物Ｕを保持面２０ａに吸引保持する。
そして、上面ハイトゲージ５１の第１プローブ５１０の第１接触子５１０ａをウェーハＷの上面Ｗａに接触させることによって、被測定物Ｕの上面の高さを測定する。 When measuring the height of the upper surface of the object U to be measured using the upper surface height gauge 51, the object U is placed on the holding surface 20a of the chuck table 2 with the lower surface Sb of the protective member S facing down. The protective member S is sucked from below by a suction means (not shown) or the like to suck and hold the object U to be measured on the holding surface 20a.
Then, the height of the upper surface of the object U to be measured is measured by bringing the first contact 510a of the first probe 510 of the upper surface height gauge 51 into contact with the upper surface Wa of the wafer W.

本ハイトゲージは、導電性を有する第１プローブ５１０を備えているため、ウェーハの研削時に研削水として使用される純水との接触等による静電気の帯電を抑えることができる。これにより、第１プローブ５１０がウェーハＷに接触する直前に放電しなくなり、放電によりウェーハＷに形成されているデバイスが破損するのを防ぐことができる。 Since this height gauge includes a conductive first probe 510, it is possible to suppress electrostatic charge due to contact with pure water used as grinding water when grinding a wafer. As a result, the first probe 510 does not discharge immediately before coming into contact with the wafer W, and it is possible to prevent the device formed on the wafer W from being damaged by the discharge.

１：研削装置 １０：ベース １１：コラム １２：カバー １３：蛇腹
２：チャックテーブル ２０：吸引部 ２０ａ：保持面 ２１：枠体
２１ａ：枠体の上面
３：研削手段 ３０：スピンドル ３１：ハウジング ３２：スピンドルモータ
３３：マウント ３４：研削ホイール ３４０：研削砥石 ３４０ｂ：研削砥石の下面
３４１：ホイール基台 ３５：回転軸
４：研削送り手段 ４０：ボールネジ ４１：ガイドレール ４２：Ｚ軸モータ
４３：昇降板 ４４：ホルダ ４５：回転軸
５：厚み測定手段 ５０：軸部 ５１：上面ハイトゲージ ５１０：第１プローブ
５１０ａ：第１接触子 ５１１：第１支持部 ５１２：ネジ穴 ５１３：小径部
５１４：大径部 ５１５：ネジ切り
５２：保持面ハイトゲージ ５２０：第２プローブ ５２０ａ：第２接触子
５２１：第２支持部
８１：スケールユニット ８１０：スケール ８１１：読み取り部
Ｗ：ウェーハ Ｗａ：ウェーハの上面 Ｗｂ：ウェーハの下面
Ｓ：保護部材 Ｓｂ：保護部材の下面 Ｕ：被測定物 Ｅ：アース 1: Grinding device 10: Base 11: Column 12: Cover 13: Bellows 2: Chuck table 20: Suction part 20a: Holding surface 21: Frame body 21a: Top surface of frame body 3: Grinding means 30: Spindle 31: Housing 32: Spindle motor 33: Mount 34: Grinding wheel 340: Grinding grind 340b: Underside of grinding grind 341: Wheel base 35: Rotating shaft 4: Grinding feed means 40: Ball screw 41: Guide rail 42: Z-axis motor 43: Lifting plate 44 : Holder 45: Rotating shaft 5: Thickness measuring means 50: Shaft 51: Top height gauge 510: First probe 510a: First contact 511: First support 512: Screw hole 513: Small diameter part 514: Large diameter part 515 : Thread cutting 52: Holding surface height gauge 520: Second probe 520a: Second contact 521: Second support 81: Scale unit 810: Scale 811: Reading W: Wafer Wa: Upper surface of wafer Wb: Lower surface of wafer S : Protective member Sb: Lower surface of protective member U: Object to be measured E: Earth

Claims (5)

被測定物の上面にプローブを接触させて、該被測定物の上面高さを測定する接触式のハイトゲージであって、
該プローブは、表面抵抗値が１×１０４Ωから１×１０９Ωで構成されていることを特徴とするハイトゲージ。 A contact-type height gauge that measures the height of the upper surface of the object to be measured by bringing the probe into contact with the upper surface of the object to be measured.
The height gauge is characterized in that the probe has a surface resistance value of 1 × 10 4 Ω to 1 × 10 9 Ω. 該プローブは、非導電性材料に対して導電性粒子を分散させることによって形成され、
該導電性粒子を５０体積％以上１５０体積％以下の配合率で配合した請求項１記載のハイトゲージ。 The probe is formed by dispersing conductive particles relative to a non-conductive material.
The height gauge according to claim 1, wherein the conductive particles are blended in a blending ratio of 50% by volume or more and 150% by volume or less. 該導電性粒子は、シリコン粒子である請求項２記載のハイトゲージ。 The height gauge according to claim 2, wherein the conductive particles are silicon particles. 該非導電性材料は、アルミナを含む請求項２記載のハイトゲージ。 The height gauge according to claim 2, wherein the non-conductive material contains alumina. 該非導電性材料は、結合剤を含む請求項２記載のハイトゲージ。 The height gauge according to claim 2, wherein the non-conductive material contains a binder.
JP2019155514A 2019-08-28 2019-08-28 Height gage Pending JP2021032800A (en)

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