JP2021009985A - Electronic component mounting structure, mounting method thereof, and led chip mounting method - Google Patents
Electronic component mounting structure, mounting method thereof, and led chip mounting method Download PDFInfo
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- JP2021009985A JP2021009985A JP2019159488A JP2019159488A JP2021009985A JP 2021009985 A JP2021009985 A JP 2021009985A JP 2019159488 A JP2019159488 A JP 2019159488A JP 2019159488 A JP2019159488 A JP 2019159488A JP 2021009985 A JP2021009985 A JP 2021009985A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
本発明は、電子部品実装構造に関し、特に、電子部品の実装歩留りを向上し得るようにした電子部品実装構造、その実装方法及びLEDチップ実装方法に係るものである。 The present invention relates to an electronic component mounting structure, and more particularly to an electronic component mounting structure that can improve the mounting yield of electronic components, a mounting method thereof, and an LED chip mounting method.
従来のLEDチップ実装方法は、基板上に複数並べて形成されたLEDチップを一旦、仮基板に転写するステップと、LEDチップを透明基板に接着した後、仮基板を剥離するステップと、LEDチップと配線基板とをアライメントした後、突合せると共に、各ピクセル内に充填された接着剤によりLEDチップと配線基板とを接合するステップとを実行するものとなっていた(例えば、特許文献1参照)。 The conventional LED chip mounting method includes a step of once transferring a plurality of LED chips formed side by side on a substrate to a temporary substrate, a step of adhering the LED chip to a transparent substrate and then peeling off the temporary substrate, and an LED chip. After aligning with the wiring board, the steps of matching the LED chip and the wiring board with the adhesive filled in each pixel are executed (see, for example, Patent Document 1).
また、他のLEDチップ実装方法は、電極配線を有する第1基板上に、境界温度T0未満で熱可塑性であり、かつT0以上で熱硬化性の接着剤層を形成し、接着剤層をT0未満の第1温度T1に加熱し接着剤層と第2基板に設けた複数の半導体素子を当接して接着し、一部の半導体素子を第2基板から分離し接着剤層上に載置し、接着剤層をT1よりも高くかつT0未満の第2温度T2に加熱し上記一部の半導体素子を接着剤層内に押し込み、続いて、上記と同様の一連の工程を実施して上記一部の半導体素子に隣接させて他の半導体素子を接着剤層内に押し込み、接着剤層をT2よりも高くかつT0未満の第3温度に加熱して半導体素子の金属電極と上記電極配線とが接するまで押圧し、接着剤層をT0よりも高い第4温度に加熱して半導体素子と第1基板とを押圧し、金属電極と電極配線を共晶接合するものとなっていた(例えば、特許文献2参照)。 In another LED chip mounting method, an adhesive layer that is thermoplastic at a boundary temperature of less than T0 and is thermally curable at T0 or more is formed on the first substrate having electrode wiring, and the adhesive layer is formed of T0. The adhesive layer is heated to a first temperature of less than T1 to abut and bond a plurality of semiconductor elements provided on the second substrate, and some semiconductor elements are separated from the second substrate and placed on the adhesive layer. The adhesive layer is heated to a second temperature T2 higher than T1 and lower than T0, some of the semiconductor elements are pushed into the adhesive layer, and then a series of steps similar to the above are carried out. Another semiconductor element is pushed into the adhesive layer adjacent to the semiconductor element of the part, and the adhesive layer is heated to a third temperature higher than T2 and less than T0, and the metal electrode of the semiconductor element and the electrode wiring are connected. It was pressed until it touched, the adhesive layer was heated to a fourth temperature higher than T0, the semiconductor element and the first substrate were pressed, and the metal electrode and the electrode wiring were eutectic bonded (for example, patented). Reference 2).
しかし、このような従来のLEDチップ実装方法において、上記特許文献1記載の発明は、LEDチップと配線基板との接合が各ピクセルに充填された絶縁性の接着剤により接合するものであったので、接着剤がLEDチップの電極と配線基板の電極との間に侵入して両電極間の導通を妨げるおそれがあった。したがって、配線基板へのLEDチップの実装歩留りの向上が阻害されるおそれがあった。 However, in such a conventional LED chip mounting method, the invention described in Patent Document 1 describes that the LED chip and the wiring board are joined by an insulating adhesive filled in each pixel. There is a risk that the adhesive may invade between the electrodes of the LED chip and the electrodes of the wiring board and hinder the continuity between the two electrodes. Therefore, there is a possibility that the improvement of the mounting yield of the LED chip on the wiring board may be hindered.
また、上記特許文献2に記載の発明では、接着剤層を第2温度T2に加熱して粘度を低下させた状態で、接着剤層内に先行して埋め込まれた一部の半導体素子に隣接した位置に他の半導体素子を押し込むものであるので、この他の半導体素子によって押しのけられた接着剤により既実装の半導体素子の位置がずれるおそれがある。そのため、半導体素子の金属電極と電極配線とが接触不良を生じるおそれがある。 Further, in the invention described in Patent Document 2, the adhesive layer is heated to a second temperature T2 to reduce the viscosity, and is adjacent to a part of the semiconductor elements embedded in the adhesive layer in advance. Since the other semiconductor element is pushed into the desired position, the position of the already mounted semiconductor element may shift due to the adhesive pushed away by the other semiconductor element. Therefore, there is a possibility that the metal electrode of the semiconductor element and the electrode wiring may have poor contact.
そこで、本発明は、このような問題に対処し、電子部品の実装歩留りを向上し得るようにした電子部品実装構造、その実装方法及びLEDチップ実装方法を提供することを目的とする。 Therefore, an object of the present invention is to provide an electronic component mounting structure, a mounting method thereof, and an LED chip mounting method that can improve the mounting yield of electronic components by dealing with such a problem.
上記目的を達成するために、第1の発明による電子部品実装構造は、配線基板上にチップ型の複数の電子部品を実装する電子部品実装構造であって、前記配線基板には、前記複数の電子部品の実装部にて、前記電子部品の電極と電気的に接触する電極の周辺部に、加熱硬化して前記電子部品を前記配線基板に接着固定する接着剤層が半硬化型接着剤をパターニングして設けられているものである。 In order to achieve the above object, the electronic component mounting structure according to the first invention is an electronic component mounting structure for mounting a plurality of chip-type electronic components on a wiring board, and the wiring board has the plurality of electronic components. In the mounting portion of the electronic component, a semi-curable adhesive is provided in the peripheral portion of the electrode that is in electrical contact with the electrode of the electronic component, in which an adhesive layer that is heat-cured to bond and fix the electronic component to the wiring substrate is formed. It is provided by patterning.
また、第2の発明による実装方法は、配線基板にチップ型の複数の電子部品を実装する実装方法であって、前記配線基板上の前記電子部品が実装される複数の実装部にて、少なくとも前記配線基板の電極の周辺部に半硬化型接着剤をパターニングして接着剤層を形成するステップと、前記複数の電子部品を夫々、前記配線基板の前記実装部に位置付けるステップと、前記電子部品と前記配線基板とを相対的に加圧して前記電子部品の電極と前記配線基板の電極とを電気的に接触させるステップと、前記接着剤層を加熱硬化させ、前記電子部品と前記配線基板との導通状態を維持して前記電子部品を前記配線基板に接着固定するステップと、を含むものである。 Further, the mounting method according to the second invention is a mounting method in which a plurality of chip-type electronic components are mounted on a wiring board, and at least in a plurality of mounting portions on which the electronic components are mounted on the wiring board. A step of patterning a semi-curable adhesive around an electrode of the wiring board to form an adhesive layer, a step of positioning each of the plurality of electronic components on the mounting portion of the wiring board, and the electronic component. And the step of electrically contacting the electrode of the electronic component and the electrode of the wiring board by relatively pressurizing the wiring board, and heating and curing the adhesive layer to obtain the electronic component and the wiring board. This includes a step of adhering and fixing the electronic component to the wiring board while maintaining the conductive state of the above.
さらに、第3の発明によるLEDチップ実装方法は、LED表示パネル用の配線基板に複数のLEDチップを実装するLEDチップ実装方法であって、前記配線基板上の前記LEDチップが実装される複数のLEDチップ実装部にて、少なくとも前記配線基板の電極の周辺部に半硬化型接着剤をパターニングして接着剤層を形成するステップと、キャリア基板の一面に設けられた前記複数のLEDチップを夫々、前記配線基板の前記LEDチップ実装部に位置付けるステップと、前記キャリア基板と前記配線基板とを相対的に加圧して前記LEDチップの電極と前記配線基板の電極とを電気的に接触させるステップと、前記接着剤層を加熱硬化し、前記LEDチップと前記配線基板との導通状態を維持して前記LEDチップを前記配線基板に接着固定するステップと、前記キャリア基板から前記LEDチップを剥離するステップと、を実行するものである。 Further, the LED chip mounting method according to the third invention is an LED chip mounting method in which a plurality of LED chips are mounted on a wiring board for an LED display panel, and a plurality of LED chips mounted on the wiring board are mounted. In the LED chip mounting portion, at least a step of patterning a semi-curable adhesive around the peripheral portion of the electrode of the wiring board to form an adhesive layer, and the plurality of LED chips provided on one surface of the carrier substrate, respectively. A step of positioning the wiring board on the LED chip mounting portion and a step of relatively pressurizing the carrier board and the wiring board to electrically contact the electrode of the LED chip and the electrode of the wiring board. A step of heating and curing the adhesive layer to maintain a conductive state between the LED chip and the wiring board to bond and fix the LED chip to the wiring board, and a step of peeling the LED chip from the carrier substrate. And, it is to execute.
そして、第4の発明によるLEDチップ実装方法は、LED表示パネル用の配線基板に複数のLEDチップを実装するLEDチップ実装方法であって、前記配線基板上の前記LEDチップが実装される複数のLEDチップ実装部にて、少なくとも前記配線基板の電極の周辺部に、室温と硬化温度との間に粘度が最低となる特異温度を有する感光性熱硬化型接着剤をフォトリソグラフィーによりパターニングして接着剤層を形成する第1ステップと、キャリア基板の一面に設けられた前記複数のLEDチップを夫々、前記配線基板の前記LEDチップ実装部に位置付ける第2ステップと、前記配線基板を前記接着剤層の前記特異温度以下の温度に加熱して粘度を低下させた状態で、前記キャリア基板と前記配線基板とを相対的に加圧して前記LEDチップを前記接着剤層内に埋め込んだ後、前記配線基板を冷却して前記LEDチップを前記LEDチップ実装部に仮実装する第3ステップと、前記キャリア基板から前記LEDチップを剥離する第4ステップと、前記第2〜第4ステップを繰り返し実施して前記配線基板の別のLEDチップ実装部に別のLEDチップを仮実装する第5ステップと、前記配線基板を前記特異温度以下の温度に加熱して前記接着剤層の粘度を低下させた状態で、仮実装された前記LEDチップを一括して押圧し、前記LEDチップの電極と前記配線基板の電極とを電気的に接触させる第6ステップと、前記接着剤層を加熱硬化し、前記LEDチップと前記配線基板との導通状態を維持して前記LEDチップを前記配線基板に接着固定する第7ステップと、を実行するものである。 The LED chip mounting method according to the fourth invention is an LED chip mounting method in which a plurality of LED chips are mounted on a wiring board for an LED display panel, and a plurality of LED chips mounted on the wiring board are mounted. In the LED chip mounting portion, a photosensitive heat-curable adhesive having a specific temperature having the lowest viscosity between room temperature and the curing temperature is patterned and adhered to at least the peripheral portion of the electrode of the wiring board by photolithography. The first step of forming the agent layer, the second step of positioning the plurality of LED chips provided on one surface of the carrier substrate at the LED chip mounting portion of the wiring board, and the wiring board of the adhesive layer. After the LED chip is embedded in the adhesive layer by relatively pressurizing the carrier substrate and the wiring board in a state of heating to a temperature equal to or lower than the specific temperature of the above to reduce the viscosity, the wiring The third step of cooling the substrate and temporarily mounting the LED chip on the LED chip mounting portion, the fourth step of peeling the LED chip from the carrier substrate, and the second to fourth steps are repeatedly performed. In the fifth step of temporarily mounting another LED chip on another LED chip mounting portion of the wiring board, and in a state where the wiring board is heated to a temperature equal to or lower than the specific temperature to reduce the viscosity of the adhesive layer. The sixth step of collectively pressing the temporarily mounted LED chips to electrically contact the electrodes of the LED chips with the electrodes of the wiring board, and heat-curing the adhesive layer to cure the LED chips. The seventh step of adhering and fixing the LED chip to the wiring board while maintaining the conduction state with the wiring board is executed.
本発明によれば、半硬化型接着剤を使用して配線基板の電極の周辺部にパターニング形成した接着剤層により、電子部品のチップと配線基板とを接着固定するものであるので、電子部品の電極と配線基板の電極との間には接着剤が存在せず、接着剤による接触不良の問題を回避することができる。また、少なくとも電子部品の電極と配線基板の電極との間には接着剤が存在しないため、電子部品実装時に電子部品によって押しのけられる接着剤の量が少なくなり、従来技術におけるような押しのけられた接着剤によって隣接した他の電子部品の位置がずれるという問題を抑制することができる。したがって、接着剤に起因したオープン欠陥が生じるおそれがなく、電子部品の実装歩留りを向上することができる。 According to the present invention, the chip of the electronic component and the wiring board are adhered and fixed by an adhesive layer patterned and formed around the electrodes of the wiring board using a semi-curable adhesive. There is no adhesive between the electrode of the above and the electrode of the wiring board, and the problem of poor contact due to the adhesive can be avoided. Further, since there is no adhesive at least between the electrode of the electronic component and the electrode of the wiring board, the amount of the adhesive that is pushed away by the electronic component when mounting the electronic component is reduced, and the adhesive that is pushed away as in the prior art is used. It is possible to suppress the problem that the positions of other adjacent electronic components are displaced by the agent. Therefore, there is no possibility that open defects due to the adhesive will occur, and the mounting yield of electronic components can be improved.
以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図1は本発明によるLED表示パネルの一実施形態の概略構成を示す図であり、(a)は平面図、(b)は要部拡大断面図である。このLED表示パネルは、LEDを点灯させて映像を表示するものであり、配線基板1と、接着剤層2と、マイクロLEDチップ(以下、単に「LEDチップ」という)3と、を備えて構成されている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. 1A and 1B are views showing a schematic configuration of an embodiment of an LED display panel according to the present invention, where FIG. 1A is a plan view and FIG. 1B is an enlarged cross-sectional view of a main part. This LED display panel is for lighting an LED to display an image, and includes a wiring board 1, an adhesive layer 2, and a micro LED chip (hereinafter, simply referred to as "LED chip") 3. Has been done.
上記配線基板1は、ガラス基板、又はポリイミド等から成るフレキシブル基板であり、外部の駆動装置に接続される走査配線及びデータ配線が縦横に交差して設けられている。また、走査配線及びデータ配線の交点には、LEDチップ3をオン・オフ駆動するための薄膜トランジスタ(TFT)が設けられている。 The wiring board 1 is a flexible substrate made of a glass substrate, polyimide, or the like, and is provided with scanning wiring and data wiring connected to an external drive device intersecting vertically and horizontally. Further, a thin film transistor (TFT) for driving the LED chip 3 on and off is provided at the intersection of the scanning wiring and the data wiring.
上記走査配線及びデータ配線の交点にて、LEDチップ実装部には、図2に断面で示すように、LEDチップ実装時に、LEDチップ3を受け入れて該LEDチップ3の電極と配線基板1に設けられたバンプ電極4とを電気的に接触させ得るようにLEDチップ3を案内する、弾性変形可能な樹脂製の接着剤層2が設けられている。この接着剤層2は、LEDチップ3の電極8と電気的に接触するバンプ電極4の周辺部に半硬化型接着剤によりパターニング形成されたものであり、加熱硬化してLEDチップ3を配線基板1に接着固定するものである。なお、図1(b)において符号9は配線基板1に設けられた配線である。 At the intersection of the scanning wiring and the data wiring, as shown in a cross section in FIG. 2, the LED chip mounting portion receives the LED chip 3 and is provided on the electrode of the LED chip 3 and the wiring board 1 at the time of mounting the LED chip. An elastically deformable resin adhesive layer 2 is provided to guide the LED chip 3 so that the bump electrode 4 can be electrically contacted with the bump electrode 4. The adhesive layer 2 is patterned and formed by a semi-curing adhesive around the bump electrode 4 that is in electrical contact with the electrode 8 of the LED chip 3, and is heat-cured to connect the LED chip 3 to the wiring substrate. It is adhesively fixed to 1. In FIG. 1B, reference numeral 9 is wiring provided on the wiring board 1.
詳細には、上記接着剤層2は、図3(a),(b),(c),(d)に示すように、フォトリソグラフィーによりパターニングすることができ、熱硬化する感光性熱硬化型接着剤を使用して、少なくとも配線基板1のバンプ電極4に対応して開口部5を設けた形態にパターニング形成されている。 Specifically, the adhesive layer 2 is a photosensitive thermosetting type that can be patterned by photolithography and is thermoset as shown in FIGS. 3 (a), (b), (c), and (d). Using an adhesive, patterning is formed in a form in which an opening 5 is provided at least corresponding to the bump electrode 4 of the wiring board 1.
半硬化型接着剤は、例えばパターニング印刷により半硬化状態の所望の形状に形成することができ、加熱により硬化する接着剤であってもよいが、LEDチップ3のような外形サイズが、例えば16μm×48μm程度の微小な電子部品のチップに対しては、上述のようなフォトリソグラフィーによりパターニングすることができ、熱硬化する感光性熱硬化型接着剤が望ましい。 The semi-curable adhesive can be formed into a desired shape in a semi-cured state by pattern printing, for example, and may be an adhesive that cures by heating, but the outer size such as the LED chip 3 is 16 μm, for example. A photosensitive thermosetting adhesive that can be patterned by photolithography as described above and is thermoset is desirable for chips of electronic components as small as × 48 μm.
ここで、図3(a)はバンプ電極4に対応して設けられた平面視矩形の開口部5を例示しており、図3(b),(c)は平面視円形の大きさの異なる開口部5を例示している。そして、図3(d)は、LEDチップ3の外形形状に対応した開口部5を例示している。 Here, FIG. 3A exemplifies an opening 5 having a rectangular shape in a plan view provided corresponding to the bump electrode 4, and FIGS. 3B and 3C have different sizes of circular shapes in a plan view. The opening 5 is illustrated. And FIG. 3D exemplifies the opening 5 corresponding to the outer shape of the LED chip 3.
なお、図3(d)に示すLEDチップ3の外形形状に対応した開口部5は、図4(a)に示すように、内側面5aが底面から開口面に向かって略垂直に立ったものであってもよく、図4(b)に示すように、内側面5aが底面から開口面に向かって広がるように傾斜したものであってもよく、又は図4(c)に示すように、内側面5aが底面から開口面側に向かって狭まるように傾斜したものであってもよい。また、接着剤層2は、LEDチップ3の外側面の一部に当接して位置ずれを規制するものであれば如何なる形態であってもよい。 As shown in FIG. 4A, the opening 5 corresponding to the outer shape of the LED chip 3 shown in FIG. 3D has an inner side surface 5a standing substantially vertically from the bottom surface toward the opening surface. It may be, as shown in FIG. 4 (b), the inner side surface 5a may be inclined so as to spread from the bottom surface toward the opening surface, or as shown in FIG. 4 (c). The inner side surface 5a may be inclined so as to narrow from the bottom surface toward the opening surface side. Further, the adhesive layer 2 may have any form as long as it abuts on a part of the outer surface of the LED chip 3 to regulate the misalignment.
上記配線基板1のLEDチップ実装部には、配線基板1のバンプ電極4との導通が維持された状態で接着剤層2の開口部5内に収容されてLEDチップ3が設けられている。このLEDチップ3は、赤、緑、青の三原色光に対応する光を放出する三種類のLEDである。又は、全てのLEDチップ3が紫外又は青色波長帯の光を放出するものであってもよい。この場合、三原色光のピクセルに対応させて各LEDチップ3の光放出面上に対応色の蛍光発光層が設けられる。 The LED chip mounting portion of the wiring board 1 is provided with the LED chip 3 housed in the opening 5 of the adhesive layer 2 in a state where the continuity with the bump electrode 4 of the wiring board 1 is maintained. The LED chip 3 is three types of LEDs that emit light corresponding to the three primary color lights of red, green, and blue. Alternatively, all the LED chips 3 may emit light in the ultraviolet or blue wavelength band. In this case, a fluorescent light emitting layer of the corresponding color is provided on the light emitting surface of each LED chip 3 corresponding to the pixels of the three primary color lights.
次に、このように構成されたLED表示パネル用の配線基板1に複数のLEDチップ3を実装するLEDチップ実装方法の第1の実施形態について説明する。
先ず、図5(a)に示すように、配線基板1上に、例えばスプレー装置やスピナー等を使用して感光性熱硬化型接着剤6を所定の厚みで均一に塗布する。
Next, a first embodiment of the LED chip mounting method in which a plurality of LED chips 3 are mounted on the wiring board 1 for the LED display panel configured in this way will be described.
First, as shown in FIG. 5A, the photosensitive thermosetting adhesive 6 is uniformly applied on the wiring board 1 to a predetermined thickness by using, for example, a spray device or a spinner.
なお、上記感光性熱硬化型接着剤6は、フォトリソグラフィー技術によりパターニングが可能であり、光硬化後は、図6に示すように室温(25℃)と硬化温度(約180℃)との間に粘性及び弾性率が最低となる特異温度Tbを有している。この場合、上記感光性熱硬化型接着剤6は、図6の特異温度Tbを境として低温側の領域Iは可逆性、高温側の領域IIは不可逆性の性質を持つものである。本実施形態においては、感光性熱硬化型接着剤6は、上記特異温度Tb(例えば110℃)で弾性率が0.05MPa〜0.1MPaであり、LEDチップ3の形状に合せて変形すると共に、弾性把持力によりLEDチップ3をモールドすることができるものである。 The photosensitive thermosetting adhesive 6 can be patterned by photolithography technology, and after photocuring, it is between room temperature (25 ° C.) and curing temperature (about 180 ° C.) as shown in FIG. Has a singular temperature Tb that has the lowest viscosity and elastic modulus. In this case, the photosensitive thermosetting adhesive 6 has a property that the low temperature side region I is reversible and the high temperature side region II is irreversible with the specific temperature Tb in FIG. 6 as a boundary. In the present embodiment, the photosensitive thermosetting adhesive 6 has an elastic modulus of 0.05 MPa to 0.1 MPa at the specific temperature Tb (for example, 110 ° C.), and is deformed according to the shape of the LED chip 3. The LED chip 3 can be molded by the elastic gripping force.
次に、図5(b)に示すように、フォトリソグラフィー技術により、上記感光性熱硬化型接着剤6をパターニングし、LEDチップ3が実装される複数のLEDチップ実装部に、少なくとも配線基板1のバンプ電極4に対応する開口部5を設けた接着剤層2を形成する。なお、図5(b)においては、開口部5がLEDチップ3の外形形状に対応した形状を有するものである場合を示している。 Next, as shown in FIG. 5B, the photosensitive thermosetting adhesive 6 is patterned by a photolithography technique, and at least the wiring board 1 is mounted on a plurality of LED chip mounting portions on which the LED chips 3 are mounted. An adhesive layer 2 having an opening 5 corresponding to the bump electrode 4 of the above is formed. Note that FIG. 5B shows a case where the opening 5 has a shape corresponding to the outer shape of the LED chip 3.
次いで、図5(c)に示すように、キャリア基板としてのサファイア基板7の一面に形成された複数のLEDチップ3が夫々、配線基板1の複数のLEDチップ実装部の接着剤層2上に位置付けられる。この位置付けは、具体的には、配線基板1に設けられたアライメントマークとサファイア基板7に設けられたアライメントマークとをアライメントカメラにより撮影し、両アライメントマークが合致又は所定の位置関係を成すようにアライメントして実行される。アライメントは、一部のLEDチップ3と配線基板1の配線パターンとを使用したり、又は配線基板1のTEG(Test Element Group)とLED側のTEGとを使用したりして行ってもよく、公知の技術を適用することができる。 Next, as shown in FIG. 5C, a plurality of LED chips 3 formed on one surface of the sapphire substrate 7 as a carrier substrate are respectively placed on the adhesive layer 2 of the plurality of LED chip mounting portions of the wiring board 1. Positioned. Specifically, in this positioning, the alignment mark provided on the wiring board 1 and the alignment mark provided on the sapphire board 7 are photographed by an alignment camera so that the two alignment marks match or form a predetermined positional relationship. Aligned and executed. Alignment may be performed by using a part of the LED chip 3 and the wiring pattern of the wiring board 1, or by using the TEG (Test Element Group) of the wiring board 1 and the TEG on the LED side. Known techniques can be applied.
続いて、図5(d)に示すように、LEDチップ3と配線基板1とを相対的に近接移動してLEDチップ3を接着剤層2にプリボンディングした後、接着剤層2を図6に示す特異温度Tb(例えば110℃)の温度領域に保持して低弾性とした状態で、図5(e)に示すように、相対的に図中の矢印方向に加圧し、LEDチップ3の電極8と配線基板1のバンプ電極4とを電気的に接触させる。 Subsequently, as shown in FIG. 5D, the LED chip 3 and the wiring substrate 1 are moved relatively close to each other to prebond the LED chip 3 to the adhesive layer 2, and then the adhesive layer 2 is transferred to FIG. As shown in FIG. 5 (e), the LED chip 3 is relatively pressurized in the direction of the arrow in the figure while being held in the temperature region of the singular temperature Tb (for example, 110 ° C.) shown in FIG. The electrode 8 and the bump electrode 4 of the wiring substrate 1 are electrically brought into contact with each other.
次いで、図7(a)に示すように、接着剤層2(感光性熱硬化型接着剤6)を加熱硬化させてLEDチップ3を配線基板1に接着固定する。具体的には、上記導通状態を維持してLEDチップ3を保持した状態で、接着剤層2(感光性熱硬化型接着剤6)を180℃で90分間、200℃で60分間又は230℃で30分間の何れかで加熱硬化し、LEDチップ3を配線基板1に接着固定する。 Next, as shown in FIG. 7A, the adhesive layer 2 (photosensitive thermosetting adhesive 6) is heat-cured to bond and fix the LED chip 3 to the wiring substrate 1. Specifically, while maintaining the conductive state and holding the LED chip 3, the adhesive layer 2 (photosensitive thermosetting adhesive 6) is applied at 180 ° C. for 90 minutes, 200 ° C. for 60 minutes, or 230 ° C. The LED chip 3 is adhesively fixed to the wiring substrate 1 by heating and curing in any of 30 minutes.
そして、図7(b)に示すように、上記サファイア基板7を透過してサファイア基板7とLEDチップ3との界面に紫外線のレーザ光Lを照射し、LEDチップ3をサファイア基板7からレーザリフトオフする。この場合、各LEDチップ3に対してレーザ光Lを個別に照射して剥離してもよく、ライン状のレーザ光Lをその長軸と交差する方向に移動しながら、複数個のLEDチップ3をまとめて剥離してもよい。これにより、図7(c)に示すように、配線基板1へのLEDチップ3の実装工程が終了する。 Then, as shown in FIG. 7B, the LED chip 3 is laser lifted off from the sapphire substrate 7 by irradiating the interface between the sapphire substrate 7 and the LED chip 3 with ultraviolet laser light L through the sapphire substrate 7. To do. In this case, each LED chip 3 may be individually irradiated with the laser beam L for peeling, and the plurality of LED chips 3 may be separated while moving the line-shaped laser beam L in the direction intersecting the long axis thereof. May be peeled off together. As a result, as shown in FIG. 7C, the step of mounting the LED chip 3 on the wiring board 1 is completed.
図8は従来技術におけるLEDチップ実装の第1の欠点を示す説明図である。
従来技術においては、一般的に、図8(a)に示すように、配線基板1上に接着剤11を塗布した後、LEDチップ3をLEDチップ実装部に位置付け、図8(b)に示すように、LEDチップ3を押圧してLEDチップ3の電極8と配線基板1の電極10とを接触させた状態で接着剤11を加熱硬化するものであった。しかし、このような接着剤11は、一般に液状又はゲル状を成したものであり、絶縁物である。したがって、LEDチップ3に対して均一な押圧力を付与することができない場合には、図8(c)に示すようにLEDチップ3の電極8が配線基板1の電極10に対して傾いて接触し、LEDチップ3の片側において電極間に隙間が生じ、この隙間に接着剤が残ってオープン欠陥となるおそれがあった。又は、押圧力が不足している場合には、図8(d)に示すようにLEDチップ3の電極8と配線基板1の電極10との間の接着剤11を排除することができず、オープン欠陥となるおそれがあった。
FIG. 8 is an explanatory diagram showing the first drawback of the LED chip mounting in the prior art.
In the prior art, generally, as shown in FIG. 8A, after applying the adhesive 11 on the wiring board 1, the LED chip 3 is positioned on the LED chip mounting portion and is shown in FIG. 8B. As described above, the adhesive 11 was heat-cured in a state where the LED chip 3 was pressed and the electrode 8 of the LED chip 3 and the electrode 10 of the wiring board 1 were in contact with each other. However, such an adhesive 11 is generally in the form of a liquid or gel and is an insulating material. Therefore, when a uniform pressing force cannot be applied to the LED chip 3, the electrode 8 of the LED chip 3 tilts and contacts the electrode 10 of the wiring substrate 1 as shown in FIG. 8 (c). However, a gap is formed between the electrodes on one side of the LED chip 3, and the adhesive may remain in the gap, resulting in an open defect. Alternatively, when the pressing force is insufficient, the adhesive 11 between the electrode 8 of the LED chip 3 and the electrode 10 of the wiring board 1 cannot be removed as shown in FIG. 8 (d). There was a risk of an open defect.
一方、本発明においては、LEDチップ3は、接着剤層2の開口部5により案内されて接着剤層2の開口部5内に侵入し、LEDチップ3の電極8と配線基板1のバンプ電極4とが電気的に接触される。 On the other hand, in the present invention, the LED chip 3 is guided by the opening 5 of the adhesive layer 2 and penetrates into the opening 5 of the adhesive layer 2, and the electrode 8 of the LED chip 3 and the bump electrode of the wiring substrate 1 are used. 4 is in electrical contact.
詳細には、接着剤層2は、図9(b)、図10(b)、図11(b)に示すように開口部5を矢印A方向に押し広げるように弾性変形する。そして、最終的には、接着剤層2の図9(c)、図10(c)、図11(c)に示すような矢印B方向の復帰力によりLEDチップ3が配線基板1との導通状態を維持してモールドされ、加圧時の滑りや回転が抑制されて位置ずれが抑制される。しかも、本発明における接着剤層2は、感光性熱硬化型接着剤6を使用して配線基板1のバンプ電極4の周辺部にパターニング形成したものであるので、LEDチップ3の電極8と配線基板1のバンプ電極4との間には接着剤が存在しない。したがって、本発明においては、接着剤に起因したオープン欠陥が生じるおそれがない。 Specifically, the adhesive layer 2 is elastically deformed so as to expand the opening 5 in the direction of arrow A as shown in FIGS. 9 (b), 10 (b), and 11 (b). Finally, the LED chip 3 is electrically connected to the wiring board 1 by the restoring force in the arrow B direction as shown in FIGS. 9 (c), 10 (c), and 11 (c) of the adhesive layer 2. It is molded while maintaining its state, and slippage and rotation during pressurization are suppressed, and misalignment is suppressed. Moreover, since the adhesive layer 2 in the present invention is patterned and formed on the peripheral portion of the bump electrode 4 of the wiring substrate 1 by using the photosensitive thermosetting adhesive 6, it is wired with the electrode 8 of the LED chip 3. There is no adhesive between the substrate 1 and the bump electrode 4. Therefore, in the present invention, there is no possibility that an open defect due to the adhesive will occur.
なお、上記第1の実施形態においては、LEDチップ3がサファイア基板7に形成されたものである場合について説明したが、本発明はこれに限られず、LEDチップ3は、キャリア基板としてのフィルムやガラス及びサファイア等の透明基材に粘着剤や接着剤又は接着フィルム等の内、少なくとも何れか1つを介して転写されたものであってもよい。この場合、図7(b)に示すLEDチップ剥離工程は、LEDチップ3をキャリア基板から引き剥がすことにより実行される。 In the first embodiment, the case where the LED chip 3 is formed on the sapphire substrate 7 has been described, but the present invention is not limited to this, and the LED chip 3 may be a film as a carrier substrate or the like. It may be transferred to a transparent base material such as glass and sapphire via at least one of an adhesive, an adhesive, an adhesive film, and the like. In this case, the LED chip peeling step shown in FIG. 7B is executed by peeling the LED chip 3 from the carrier substrate.
また、上記第1の実施形態においては、LEDチップ実装部に接着剤層2を設けた場合について説明したが、本発明はこれに限られず、半硬化型接着剤又は感光性熱硬化型接着剤が配線基板1のバンプ電極4を除く、その周辺部にパターニング形成され、LEDチップ3と配線基板1とを両電極間の導通状態を維持して接着固定することができるのであれば、接着剤層2のパターン形状は如何なる形状であってもよい。 Further, in the first embodiment, the case where the adhesive layer 2 is provided on the LED chip mounting portion has been described, but the present invention is not limited to this, and the semi-curable adhesive or the photosensitive thermosetting adhesive is not limited to this. Is formed in a pattern around the bump electrode 4 of the wiring board 1 except for the bump electrode 4, and if the LED chip 3 and the wiring board 1 can be bonded and fixed while maintaining a conductive state between the two electrodes, an adhesive is used. The pattern shape of the layer 2 may be any shape.
そして、上述したいずれの変更も、後述する第2及び第3の実施形態においても同様に実施可能である。 Then, any of the above-mentioned changes can be similarly implemented in the second and third embodiments described later.
次に、本発明によるLEDチップ実装方法の第2の実施形態を図12に示すフローチャートを参照して説明する。
特に、この第2の実施形態は、赤、緑及び青の三種類のLEDチップ3R,3G,3Bを夫々配線基板1に実装しようとするものである。なお、図13は赤色LEDチップ3Rの実装を模式的に示す平面図、図14は図13の断面図である。
Next, a second embodiment of the LED chip mounting method according to the present invention will be described with reference to the flowchart shown in FIG.
In particular, this second embodiment is intended to mount three types of LED chips 3R, 3G, and 3B of red, green, and blue on the wiring board 1, respectively. 13 is a plan view schematically showing the mounting of the red LED chip 3R, and FIG. 14 is a cross-sectional view of FIG.
先ず、ステップS1においては、図13(a)及び図14(a)に示すように、例えばスピナーやスプレー装置を使用して配線基板1の全面に感光性熱硬化型接着剤6が均一に塗布される。なお、図13及び図14において符号14は、配線基板1に設けられた電極パッドを示す。 First, in step S1, as shown in FIGS. 13 (a) and 14 (a), the photosensitive thermosetting adhesive 6 is uniformly applied to the entire surface of the wiring board 1 using, for example, a spinner or a spray device. Will be done. In FIGS. 13 and 14, reference numeral 14 indicates an electrode pad provided on the wiring board 1.
次に、ステップS2においては、図13(b)及び図14(b)に示すように、ネガ型のフォトマスクを使用して感光性熱硬化型接着剤6を露光した後、現像して、LEDチップ3の外形形状に対応させて開口部5を形成すると共に、隣接するLEDチップ3間に隙間13を形成する。感光性熱硬化型接着剤6は、UV(ultraviolet)光が照射された部分が光硬化して残り、接着剤層2が形成される。 Next, in step S2, as shown in FIGS. 13 (b) and 14 (b), the photosensitive thermosetting adhesive 6 is exposed to the photosensitive thermosetting adhesive 6 using a negative photo mask, and then developed. An opening 5 is formed corresponding to the outer shape of the LED chip 3, and a gap 13 is formed between the adjacent LED chips 3. In the photosensitive thermosetting adhesive 6, the portion irradiated with UV (ultraviolet) light is photocured and remains, and the adhesive layer 2 is formed.
次いで、ステップS3において、図13(c)及び図14(c)に示すように、複数の赤色LEDチップ3Rを形成した透明なサファイア基板7(赤色LEDウエハ)を配線基板1に対してアライメントし、赤色LEDチップ3Rを配線基板1の対応する実装部に位置付ける。アライメントは、サファイア基板7及び配線基板1に夫々設けられたアライメントマークを使用したり、一部のLEDチップ3と配線基板1の配線パターンとを使用したり、又は配線基板1のTEG(Test Element Group)とLED側のTEGとを使用したりして行ってもよく、公知の技術を適用することができる。 Next, in step S3, as shown in FIGS. 13 (c) and 14 (c), the transparent sapphire substrate 7 (red LED wafer) on which the plurality of red LED chips 3R are formed is aligned with the wiring substrate 1. , The red LED chip 3R is positioned at the corresponding mounting portion of the wiring board 1. For alignment, alignment marks provided on the sapphire substrate 7 and the wiring board 1 are used, some LED chips 3 and the wiring pattern of the wiring board 1 are used, or TEG (Test Element) of the wiring board 1 is used. Group) and TEG on the LED side may be used, and known techniques can be applied.
続いて、ステップS4において、図13(d)及び図14(d)に示すように、赤色LEDチップ3Rの仮実装が行われる。詳細には、配線基板1を図6に示す特異温度Tb以下の温度、例えば110℃に加熱して、接着剤層2の粘度を低下させた状態でサファイア基板7と配線基板1とを相対的に押圧し、赤色LEDチップ3Rを接着剤層2内に埋め込む。その後、配線基板1を例えば空冷により室温まで冷却することにより、接着剤層2の粘度を上昇させる。これにより、赤色LEDチップ3Rは、接着剤層2内に保持される。 Subsequently, in step S4, as shown in FIGS. 13 (d) and 14 (d), the red LED chip 3R is temporarily mounted. Specifically, the wiring board 1 is heated to a temperature equal to or lower than the specific temperature Tb shown in FIG. 6, for example, 110 ° C., and the sapphire substrate 7 and the wiring board 1 are relative to each other in a state where the viscosity of the adhesive layer 2 is reduced. The red LED chip 3R is embedded in the adhesive layer 2. After that, the viscosity of the adhesive layer 2 is increased by cooling the wiring board 1 to room temperature by, for example, air cooling. As a result, the red LED chip 3R is held in the adhesive layer 2.
次に、ステップS5において、例えば波長がFHG(4倍波)のピコ秒レーザを用いてレーザ光Lがサファイア基板7を透過して赤色LEDチップ3Rに照射され、赤色LEDチップ3Rがサファイア基板7からレーザリフトオフ(LLO:laser lift off)される。 Next, in step S5, for example, using a picosecond laser having a wavelength of FHG (fourth harmonic), the laser beam L passes through the sapphire substrate 7 and is irradiated to the red LED chip 3R, and the red LED chip 3R is irradiated to the sapphire substrate 7. Laser lift off (LLO: laser lift off).
次いで、ステップS6において、サファイア基板7を引き剥がすことにより剥離が完了し、図13(e)及び図14(e)に示すように、赤色LEDチップ3Rが接着剤層2内に埋め込まれた状態で残る。 Next, in step S6, the peeling is completed by peeling off the sapphire substrate 7, and as shown in FIGS. 13 (e) and 14 (e), the red LED chip 3R is embedded in the adhesive layer 2. Remains in.
次に、ステップS7において、全てのLEDチップの実装が終了したか否かが判断される。このとき、実装が未だ完了しておらず、ステップS7において「NO」判定となると、ステップS8に進んで別のLEDウエハ、例えば緑色LEDウエハ及び青色LEDウエハが準備される。そして、ステップS3に戻って、上記と同様にしてステップS3〜S7が繰り返し実行され、緑色LEDチップ3G及び青色LEDチップ3Bの実装が順次行われる。 Next, in step S7, it is determined whether or not the mounting of all the LED chips is completed. At this time, if the mounting is not yet completed and a "NO" determination is made in step S7, the process proceeds to step S8 to prepare another LED wafer, for example, a green LED wafer and a blue LED wafer. Then, returning to step S3, steps S3 to S7 are repeatedly executed in the same manner as described above, and the green LED chip 3G and the blue LED chip 3B are sequentially mounted.
図15は緑色LEDチップ3Gの実装を模式的に示す平面図、図16は図15の断面図である。
先ず、図15(a)及び図16(a)に示すように、複数の緑色LEDチップ3Gを形成した透明なサファイア基板7(緑色LEDウエハ)を配線基板1に対してアライメントし、緑色LEDチップ3Gを配線基板1の対応する実装部に位置付ける。
FIG. 15 is a plan view schematically showing the mounting of the green LED chip 3G, and FIG. 16 is a cross-sectional view of FIG.
First, as shown in FIGS. 15A and 16A, a transparent sapphire substrate 7 (green LED wafer) on which a plurality of green LED chips 3G are formed is aligned with the wiring substrate 1, and the green LED chip is formed. Position the 3G on the corresponding mounting section of the wiring board 1.
次に、図15(b)及び図16(b)に示すように、配線基板1を図6に示す特異温度Tb以下の温度、例えば110℃に加熱して、接着剤層2の粘度を低下させた状態でサファイア基板7と配線基板1とを相対的に押圧し、緑色LEDチップ3Gを接着剤層2内に埋め込む。その後、配線基板1を例えば空冷により室温まで冷却することにより、接着剤層2の粘度を上昇させる。これにより、緑色LEDチップ3Gは、接着剤層2内に保持される。 Next, as shown in FIGS. 15 (b) and 16 (b), the wiring board 1 is heated to a temperature equal to or lower than the specific temperature Tb shown in FIG. 6, for example, 110 ° C. to reduce the viscosity of the adhesive layer 2. The sapphire substrate 7 and the wiring substrate 1 are relatively pressed in this state, and the green LED chip 3G is embedded in the adhesive layer 2. After that, the viscosity of the adhesive layer 2 is increased by cooling the wiring board 1 to room temperature by, for example, air cooling. As a result, the green LED chip 3G is held in the adhesive layer 2.
次いで、波長がFHG(4倍波)のピコ秒レーザを用いてレーザ光Lがサファイア基板7を透過して緑色LEDチップ3Gに照射され、緑色LEDチップ3Gがサファイア基板7からレーザリフトオフ(LLO)される。その後、サファイア基板7を引き剥がすことにより剥離が完了し、図15(c)及び図16(c)に示すように、赤色LEDチップ3Rの隣の接着剤層2内に緑色LEDチップ3Gが埋め込まれた状態で残る。 Next, using a picosecond laser having a wavelength of FHG (4th harmonic), the laser beam L passes through the sapphire substrate 7 and is irradiated to the green LED chip 3G, and the green LED chip 3G is laser lifted off (LLO) from the sapphire substrate 7. Will be done. After that, the peeling is completed by peeling off the sapphire substrate 7, and as shown in FIGS. 15 (c) and 16 (c), the green LED chip 3G is embedded in the adhesive layer 2 adjacent to the red LED chip 3R. It remains in a state of being sapphire.
図17は青色LEDチップ3Bの実装を模式的に示す平面図、図18は図17の断面図である。
先ず、図17(a)及び図18(a)に示すように、複数の青色LEDチップ3Bを形成した透明なサファイア基板7(青色LEDウエハ)を配線基板1に対してアライメントし、青色LEDチップ3Bを配線基板1の対応する実装部に位置付ける。
FIG. 17 is a plan view schematically showing the mounting of the blue LED chip 3B, and FIG. 18 is a cross-sectional view of FIG.
First, as shown in FIGS. 17A and 18A, a transparent sapphire substrate 7 (blue LED wafer) on which a plurality of blue LED chips 3B are formed is aligned with the wiring substrate 1, and the blue LED chip is formed. Position 3B at the corresponding mounting section of the wiring board 1.
次に、図17(b)及び図18(b)に示すように、配線基板1を図6に示す特異温度Tb以下の温度、例えば110℃に加熱して、接着剤層2の粘度を低下させた状態でサファイア基板7と配線基板1とを相対的に押圧し、青色LEDチップ3Bを接着剤層2内に埋め込む。その後、配線基板1を例えば空冷により室温まで冷却することにより、接着剤層2の粘度を上昇させる。これにより、青色LEDチップ3Bは、接着剤層2内に保持される。 Next, as shown in FIGS. 17 (b) and 18 (b), the wiring board 1 is heated to a temperature equal to or lower than the specific temperature Tb shown in FIG. 6, for example, 110 ° C. to reduce the viscosity of the adhesive layer 2. The sapphire substrate 7 and the wiring substrate 1 are relatively pressed in this state, and the blue LED chip 3B is embedded in the adhesive layer 2. After that, the viscosity of the adhesive layer 2 is increased by cooling the wiring board 1 to room temperature by, for example, air cooling. As a result, the blue LED chip 3B is held in the adhesive layer 2.
次いで、波長がFHG(4倍波)のピコ秒レーザを用いてレーザ光Lがサファイア基板7を透過して青色LEDチップ3Bに照射され、青色LEDチップ3Bがサファイア基板7からレーザリフトオフ(LLO)される。その後、サファイア基板7を引き剥がすことにより剥離が完了し、図17(c)及び図18(c)に示すように、緑色LEDチップ3Gの隣の接着剤層2内に青色LEDチップ3Bが埋め込まれた状態で残る。 Next, using a picosecond laser having a wavelength of FHG (4th harmonic), the laser beam L passes through the sapphire substrate 7 and is irradiated to the blue LED chip 3B, and the blue LED chip 3B is laser lifted off (LLO) from the sapphire substrate 7. Will be done. After that, the peeling is completed by peeling off the sapphire substrate 7, and as shown in FIGS. 17 (c) and 18 (c), the blue LED chip 3B is embedded in the adhesive layer 2 adjacent to the green LED chip 3G. It remains in a state of being sapphire.
上述の手順により全てのLEDチップ3の実装が終了し、ステップS7において「YES」判定となるとステップS9に進む。そして、図19(a)及び図20(a)に示すように、配線基板1を図6の特異温度Tb以下の温度(例えば、110℃)に加熱して接着剤層2の粘度を低下させた状態で、全てのLEDチップ3を覆うフラットな押圧基板12により全LEDチップ3を一括して押圧し、各LEDチップ3の電極8と配線基板1のバンプ電極4とを電気的に接触させる。その後、LEDチップ3の導通状態を維持しながら、配線基板1を感光性熱硬化型接着剤6の硬化温度まで加熱して接着剤層2(感光性熱硬化型接着剤6)を硬化させる。 When the mounting of all the LED chips 3 is completed by the above procedure and a "YES" determination is made in step S7, the process proceeds to step S9. Then, as shown in FIGS. 19A and 20A, the wiring substrate 1 is heated to a temperature equal to or lower than the specific temperature Tb of FIG. 6 (for example, 110 ° C.) to reduce the viscosity of the adhesive layer 2. In this state, all the LED chips 3 are pressed together by the flat pressing substrate 12 that covers all the LED chips 3, and the electrodes 8 of the LED chips 3 and the bump electrodes 4 of the wiring substrate 1 are electrically brought into contact with each other. .. Then, while maintaining the conductive state of the LED chip 3, the wiring substrate 1 is heated to the curing temperature of the photosensitive thermosetting adhesive 6 to cure the adhesive layer 2 (photosensitive thermosetting adhesive 6).
具体的には、上記導通状態を維持してLEDチップ3を保持した状態で、接着剤層2(感光性熱硬化型接着剤6)を180℃で90分間、200℃で60分間又は230℃で30分間の何れかで加熱硬化する。これにより、図19(b)及び図20(b)に示すように、全LEDチップ3が接着剤層2により配線基板1に接着固定され、全ての実装工程が終了する。 Specifically, the adhesive layer 2 (photosensitive thermosetting adhesive 6) is applied at 180 ° C. for 90 minutes, 200 ° C. for 60 minutes, or 230 ° C. while maintaining the conductive state and holding the LED chip 3. Heat cure in any of 30 minutes. As a result, as shown in FIGS. 19B and 20B, all the LED chips 3 are adhesively fixed to the wiring board 1 by the adhesive layer 2, and all the mounting steps are completed.
図21は従来技術の第2の欠点を示す説明図である。従来技術においては、図21(a)に示すように配線基板1に塗布された接着剤11を境界温度T0未満のT2温度に加熱して粘度を低下させた状態で、接着剤11内に、例えば赤色LEDチップ3Rを埋め込んだ後、図21(b)に示すようにレーザリフトオフにより赤色LEDチップ3Rをサファイア基板7から剥離する。 FIG. 21 is an explanatory diagram showing a second drawback of the prior art. In the prior art, as shown in FIG. 21A, the adhesive 11 applied to the wiring substrate 1 is heated to a T2 temperature lower than the boundary temperature T0 to reduce the viscosity, and then the adhesive 11 is placed in the adhesive 11. For example, after embedding the red LED chip 3R, the red LED chip 3R is peeled off from the sapphire substrate 7 by laser lift-off as shown in FIG. 21 (b).
次に、図21(c)に示すように、先行して埋め込まれた赤色LEDチップ3Rに隣接した位置に、上記と同様にして緑色LEDチップ3Gを押し込む。このとき、図21(d)に示すように、この緑色LEDチップ3Gによって押しのけられた接着剤11により、既実装の赤色LEDチップ3Rが図21(d)の矢印で示すように横に押されて傾いたり、位置がずれたりするおそれがあった。そのため、LEDチップ3の電極8と配線基板1のバンプ電極4との接触不良が生じるおそれがあった。 Next, as shown in FIG. 21C, the green LED chip 3G is pushed into the position adjacent to the red LED chip 3R embedded in advance in the same manner as described above. At this time, as shown in FIG. 21 (d), the already mounted red LED chip 3R is laterally pushed by the adhesive 11 pushed away by the green LED chip 3G as shown by the arrow in FIG. 21 (d). There was a risk of tilting or shifting the position. Therefore, there is a possibility that poor contact between the electrode 8 of the LED chip 3 and the bump electrode 4 of the wiring board 1 may occur.
一方、図22は本発明による上記第2の実施形態の効果について示す説明図である。本発明においては、接着剤層2は、感光性熱硬化型接着剤6を使用して配線基板1のバンプ電極4の周辺部にパターニング形成されたものであるので、図22(a)に示すように、LEDチップ3の電極8と配線基板1のバンプ電極4との間には開口部5が存在し、接着剤が存在しない。 On the other hand, FIG. 22 is an explanatory diagram showing the effect of the second embodiment according to the present invention. In the present invention, the adhesive layer 2 is patterned and formed on the peripheral portion of the bump electrode 4 of the wiring substrate 1 by using the photosensitive thermosetting adhesive 6, and is therefore shown in FIG. 22 (a). As described above, there is an opening 5 between the electrode 8 of the LED chip 3 and the bump electrode 4 of the wiring substrate 1, and there is no adhesive.
さらに、接着剤層2の隣接するLEDチップ3間には、隙間13が存在する。したがって、感光性熱硬化型接着剤6から成る接着剤層2を図6に示す特異温度Tb以下の温度で加熱して粘度を低下させた状態で、図22(b)に示すように接着剤層2内に既実装の赤色LEDチップ3Rに隣接した別の接着剤層2内に、図22(c)に示すように緑色LEDチップ3Gを押し込んでも、図22(d)に示すように、この緑色LEDチップ3Gによって押しのけられる接着剤11の量が少ないため既実装の赤色LEDチップ3Rの位置ずれが抑制される。 Further, there is a gap 13 between the adjacent LED chips 3 of the adhesive layer 2. Therefore, as shown in FIG. 22B, the adhesive layer 2 made of the photosensitive thermosetting adhesive 6 is heated at a temperature equal to or lower than the specific temperature Tb shown in FIG. 6 to reduce the viscosity. Even if the green LED chip 3G is pushed into another adhesive layer 2 adjacent to the red LED chip 3R already mounted in the layer 2 as shown in FIG. 22 (c), as shown in FIG. 22 (d), Since the amount of the adhesive 11 pushed away by the green LED chip 3G is small, the misalignment of the already mounted red LED chip 3R is suppressed.
特に、隣接するLEDチップ3間に隙間13が存在するため、押しのけられた接着剤11の影響が既実装のLEDチップ3にまで及ぶおそれがより抑制される。したがって、LEDチップ3の電極8と配線基板1のバンプ電極4との接触不良が生じるおそれがない。なお、本発明においては、LEDチップ3によって押しのけられる接着剤の量が少ないため、上記隙間13は、無くてもよい。このことは、複数のLEDチップ3を稠密実装する場合に有効である。 In particular, since the gap 13 exists between the adjacent LED chips 3, the possibility that the effect of the adhesive 11 pushed away will extend to the already mounted LED chips 3 is further suppressed. Therefore, there is no possibility that poor contact between the electrode 8 of the LED chip 3 and the bump electrode 4 of the wiring board 1 will occur. In the present invention, the gap 13 may not be provided because the amount of the adhesive pushed away by the LED chip 3 is small. This is effective when a plurality of LED chips 3 are densely mounted.
次に、本発明によるLEDチップ実装方法の第3の実施形態を説明する。この第3の実施形態は、大面積のLED表示パネル用の配線基板1に、この配線基板1より面積が小さいサファイア基板7に形成された複数のLEDチップ3を順次実装するための方法である。ここで使用するLEDチップ3は、近紫外又は青色波長帯の光を放出するものであり、各LEDチップ3の光放出面上には、3原色光に対応した蛍光発光層が設けられる。 Next, a third embodiment of the LED chip mounting method according to the present invention will be described. The third embodiment is a method for sequentially mounting a plurality of LED chips 3 formed on a sapphire substrate 7 having a smaller area than the wiring board 1 on a wiring board 1 for a large-area LED display panel. .. The LED chip 3 used here emits light in the near-ultraviolet or blue wavelength band, and a fluorescent light emitting layer corresponding to the three primary color lights is provided on the light emitting surface of each LED chip 3.
先ず、図23(a)に示すように、配線基板1の全面に、例えばスプレー装置やスピナー等を使用して感光性熱硬化型接着剤6を所定の厚みで均一に塗布する。 First, as shown in FIG. 23A, the photosensitive thermosetting adhesive 6 is uniformly applied to the entire surface of the wiring board 1 with a predetermined thickness by using, for example, a spray device or a spinner.
次に、図23(b)に示すように、フォトリソグラフィー技術により、上記感光性熱硬化型接着剤6をパターニングし、少なくとも配線基板1のバンプ電極4に対応させて開口部5を設けた接着剤層2を形成する。なお、図23(b)においては、図が煩雑になるのを避けるためにLEDチップ3の外形形状に対応した形状の開口部5のみを設けた場合を示しているが、隣接するLEDチップ3間に図14(b)に示すような隙間13を設けてもよい。 Next, as shown in FIG. 23B, the photosensitive thermosetting adhesive 6 is patterned by a photolithography technique, and an opening 5 is provided at least corresponding to the bump electrode 4 of the wiring board 1. The agent layer 2 is formed. Note that FIG. 23B shows a case where only the opening 5 having a shape corresponding to the outer shape of the LED chip 3 is provided in order to avoid complicating the figure, but the adjacent LED chip 3 A gap 13 as shown in FIG. 14B may be provided between them.
次いで、図23(c)に示すように、複数のLEDチップ3が形成されたサファイア基板7を配線基板1の第1の実装領域に位置付ける。アライメントは、サファイア基板7及び配線基板1に夫々設けられたアライメントマークを使用したり、一部のLEDチップ3と配線基板1の配線パターンとを使用したり、又は配線基板1のTEG(Test Element Group)とLED側のTEGとを使用したりして行ってもよい。 Next, as shown in FIG. 23C, the sapphire substrate 7 on which the plurality of LED chips 3 are formed is positioned in the first mounting region of the wiring substrate 1. For alignment, alignment marks provided on the sapphire substrate 7 and the wiring board 1 are used, some LED chips 3 and the wiring pattern of the wiring board 1 are used, or TEG (Test Element) of the wiring board 1 is used. Group) and TEG on the LED side may be used.
次に、図23(d)に示すように、LEDチップ3の仮実装が行われる。詳細には、配線基板1を図6に示す特異温度Tb以下の温度、例えば110℃に加熱して、接着剤層2の粘度を低下させた状態でサファイア基板7と配線基板1とを相対的に押圧し、LEDチップ3を接着剤層2内に埋め込む。その後、配線基板1を例えば空冷により室温まで冷却することにより、接着剤層2の粘度を上昇させる。これにより、LEDチップ3は、接着剤層2内に保持される。 Next, as shown in FIG. 23 (d), the LED chip 3 is temporarily mounted. Specifically, the sapphire substrate 7 and the wiring board 1 are relative to each other in a state where the wiring board 1 is heated to a temperature equal to or lower than the specific temperature Tb shown in FIG. 6, for example, 110 ° C. to reduce the viscosity of the adhesive layer 2. The LED chip 3 is embedded in the adhesive layer 2. After that, the viscosity of the adhesive layer 2 is increased by cooling the wiring board 1 to room temperature by, for example, air cooling. As a result, the LED chip 3 is held in the adhesive layer 2.
次いで、図23(e)に示すように、例えば波長がFHG(4倍波)のピコ秒レーザを用いてレーザ光Lがサファイア基板7を透過してLEDチップ3に照射され、LEDチップ3がサファイア基板7からレーザリフトオフ(LLO)される。 Next, as shown in FIG. 23 (e), the laser beam L is transmitted through the sapphire substrate 7 and irradiated to the LED chip 3 by using, for example, a picosecond laser having a wavelength of FHG (fourth harmonic), and the LED chip 3 is irradiated. Laser lift off (LLO) from the sapphire substrate 7.
その後、サファイア基板7を引き剥がすことにより剥離が完了し、図23(f)に示すように、LEDチップ3が第1の実装領域の接着剤層2内に埋め込まれた状態で残る。 After that, the peeling is completed by peeling off the sapphire substrate 7, and as shown in FIG. 23 (f), the LED chip 3 remains embedded in the adhesive layer 2 in the first mounting region.
続いて、図24(a)に示すように、配線基板1の第1の実装領域に隣接する第2の実装領域に複数のLEDチップ3が形成された別のサファイア基板7を上述と同様にして位置付ける。 Subsequently, as shown in FIG. 24A, another sapphire substrate 7 in which a plurality of LED chips 3 are formed in the second mounting region adjacent to the first mounting region of the wiring board 1 is made in the same manner as described above. Position it.
次に、図24(b)に示すように、LEDチップ3の仮実装が行われる。詳細には、上述と同様にして配線基板1を図6に示す特異温度Tb以下の温度、例えば110℃に加熱して、接着剤層2の粘度を低下させた状態でサファイア基板7と配線基板1とを相対的に押圧し、LEDチップ3を接着剤層2内に埋め込む。その後、配線基板1を例えば空冷により室温まで冷却することにより、接着剤層2の粘度を上昇させる。これにより、LEDチップ3は、接着剤層2内に保持される。 Next, as shown in FIG. 24B, the LED chip 3 is temporarily mounted. Specifically, in the same manner as described above, the wiring board 1 is heated to a temperature equal to or lower than the singular temperature Tb shown in FIG. 6, for example, 110 ° C. to reduce the viscosity of the adhesive layer 2, and the sapphire substrate 7 and the wiring board are reduced. The LED chip 3 is embedded in the adhesive layer 2 by pressing relative to 1. After that, the viscosity of the adhesive layer 2 is increased by cooling the wiring board 1 to room temperature by, for example, air cooling. As a result, the LED chip 3 is held in the adhesive layer 2.
次いで、図24(c)に示すように、例えば波長がFHG(4倍波)のピコ秒レーザを用いてレーザ光Lがサファイア基板7を透過してLEDチップ3に照射され、LEDチップ3がサファイア基板7からレーザリフトオフ(LLO)される。 Next, as shown in FIG. 24 (c), the laser beam L is transmitted through the sapphire substrate 7 and irradiated to the LED chip 3 by using, for example, a picosecond laser having a wavelength of FHG (fourth harmonic), and the LED chip 3 is irradiated. Laser lift off (LLO) from the sapphire substrate 7.
そして、サファイア基板7を引き剥がすことにより剥離が完了し、図24(d)に示すように、LEDチップ3が第2の実装領域の接着剤層2内に埋め込まれた状態で残る。 Then, the peeling is completed by peeling off the sapphire substrate 7, and as shown in FIG. 24D, the LED chip 3 remains embedded in the adhesive layer 2 in the second mounting region.
続いて、図25(a)に示すように、配線基板1を図6のTb以下の温度(例えば、110℃)に加熱して接着剤層2の粘度を低下させた状態で、全てのLEDチップ3を覆うフラットな押圧基板12により全LEDチップ3を一括して押圧し、各LEDチップ3の電極8と配線基板1のバンプ電極4とを電気的に接触させる。その後、LEDチップ3の導通状態を維持しながら、配線基板1を感光性熱硬化型接着剤6の硬化温度まで加熱して接着剤層2を硬化させる。 Subsequently, as shown in FIG. 25A, all the LEDs are in a state where the wiring substrate 1 is heated to a temperature equal to or lower than Tb in FIG. 6 (for example, 110 ° C.) to reduce the viscosity of the adhesive layer 2. All the LED chips 3 are collectively pressed by the flat pressing substrate 12 that covers the chips 3, and the electrodes 8 of the LED chips 3 and the bump electrodes 4 of the wiring substrate 1 are electrically brought into contact with each other. After that, the wiring substrate 1 is heated to the curing temperature of the photosensitive thermosetting adhesive 6 while maintaining the conductive state of the LED chip 3, and the adhesive layer 2 is cured.
具体的には、接着剤層2(感光性熱硬化型接着剤6)を180℃で90分間、200℃で60分間又は230℃で30分間の何れかで加熱硬化する。これにより、図25(b)に示すように、各LEDチップ3が、配線基板1との導通状態を維持した状態で接着剤層2により配線基板1に接着固定され、図26に示すように全LEDチップ3の実装が終了する。 Specifically, the adhesive layer 2 (photosensitive thermosetting adhesive 6) is heat-cured at 180 ° C. for 90 minutes, 200 ° C. for 60 minutes, or 230 ° C. for 30 minutes. As a result, as shown in FIG. 25B, each LED chip 3 is adhesively fixed to the wiring board 1 by the adhesive layer 2 while maintaining the conduction state with the wiring board 1, and as shown in FIG. 26. The mounting of all LED chips 3 is completed.
その後、各LEDチップ3の光放出面上に赤、緑、青色の各色対応の蛍光発光層(波長変換層)が形成され、フルカラーのLED表示パネルが完成する。 After that, a fluorescent light emitting layer (wavelength conversion layer) corresponding to each color of red, green, and blue is formed on the light emitting surface of each LED chip 3, and a full-color LED display panel is completed.
このように、第3の実施形態においても、第1及び第2の実装領域の境界部に位置するLEDチップ3が隣のLEDチップ3によって押しのけられた接着剤に押されて、LEDチップ3の位置ずれが生じるおそれが無く、導通不良の問題が抑制される。 As described above, also in the third embodiment, the LED chip 3 located at the boundary between the first and second mounting regions is pushed by the adhesive pushed away by the adjacent LED chip 3, and the LED chip 3 There is no possibility of misalignment, and the problem of poor continuity is suppressed.
以上の説明においては、電子部品がLEDチップ3である場合について述べたが、本発明はこれに限られず、電子部品は、チップ状のものであれば、ICチップ等如何なるものであってもよい。 In the above description, the case where the electronic component is the LED chip 3 has been described, but the present invention is not limited to this, and the electronic component may be any chip-shaped electronic component such as an IC chip. ..
1…配線基板
2…接着剤層
3…LEDチップ(電子部品)
4…配線基板のバンプ電極
5…開口部
6…感光性熱硬化型接着剤
7…サファイア基板(キャリア基板)
8…LEDチップの電極
13…隙間
1 ... Wiring board 2 ... Adhesive layer 3 ... LED chip (electronic component)
4 ... Bump electrode of wiring board 5 ... Opening 6 ... Photosensitive thermosetting adhesive 7 ... Sapphire substrate (carrier substrate)
8 ... LED chip electrode 13 ... Gap
Claims (16)
前記配線基板には、前記複数の電子部品の実装部にて、前記電子部品の電極と電気的に接触する電極の周辺部に、加熱硬化して前記電子部品を前記配線基板に接着固定する接着剤層が半硬化型接着剤をパターニングして設けられていることを特徴とする電子部品実装構造。 It is an electronic component mounting structure in which a plurality of chip-type electronic components are mounted on a wiring board.
On the wiring board, at the mounting portion of the plurality of electronic components, the electronic component is bonded and fixed to the wiring board by heating and curing the peripheral portion of the electrode that is in electrical contact with the electrode of the electronic component. An electronic component mounting structure characterized in that the agent layer is provided by patterning a semi-curable adhesive.
前記配線基板上の前記電子部品が実装される複数の実装部にて、少なくとも前記配線基板の電極の周辺部に半硬化型接着剤をパターニングして接着剤層を形成するステップと、
前記複数の電子部品を夫々、前記配線基板の前記実装部に位置付けるステップと、
前記電子部品と前記配線基板とを相対的に加圧して前記電子部品の電極と前記配線基板の電極とを電気的に接触させるステップと、
前記接着剤層を加熱硬化させ、前記電子部品と前記配線基板との導通状態を維持して前記電子部品を前記配線基板に接着固定するステップと、
を含むことを特徴とする実装方法。 It is a mounting method that mounts multiple chip-type electronic components on a wiring board.
A step of forming an adhesive layer by patterning a semi-curable adhesive at least around the electrodes of the wiring board at a plurality of mounting portions on the wiring board on which the electronic components are mounted.
A step of positioning each of the plurality of electronic components on the mounting portion of the wiring board, and
A step of relatively pressurizing the electronic component and the wiring board to electrically contact the electrode of the electronic component and the electrode of the wiring board.
A step of heating and curing the adhesive layer, maintaining a conductive state between the electronic component and the wiring board, and adhering and fixing the electronic component to the wiring board.
An implementation method characterized by including.
前記配線基板上の前記LEDチップが実装される複数のLEDチップ実装部にて、少なくとも前記配線基板の電極の周辺部に半硬化型接着剤をパターニングして接着剤層を形成するステップと、
キャリア基板の一面に設けられた前記複数のLEDチップを夫々、前記配線基板の前記LEDチップ実装部に位置付けるステップと、
前記キャリア基板と前記配線基板とを相対的に加圧して前記LEDチップの電極と前記配線基板の電極とを電気的に接触させるステップと、
前記接着剤層を加熱硬化し、前記LEDチップと前記配線基板との導通状態を維持して前記LEDチップを前記配線基板に接着固定するステップと、
前記キャリア基板から前記LEDチップを剥離するステップと、
を実行することを特徴とするLEDチップ実装方法。 This is an LED chip mounting method in which a plurality of LED chips are mounted on a wiring board for an LED display panel.
A step of forming an adhesive layer by patterning a semi-curable adhesive at least around the electrodes of the wiring board at a plurality of LED chip mounting portions on the wiring board on which the LED chips are mounted.
A step of positioning the plurality of LED chips provided on one surface of the carrier board on the LED chip mounting portion of the wiring board, respectively.
A step of relatively pressurizing the carrier substrate and the wiring board to electrically contact the electrode of the LED chip and the electrode of the wiring board.
A step of heat-curing the adhesive layer, maintaining a conductive state between the LED chip and the wiring board, and adhering and fixing the LED chip to the wiring board.
The step of peeling the LED chip from the carrier substrate and
LED chip mounting method characterized by executing.
前記配線基板上の前記LEDチップが実装される複数のLEDチップ実装部にて、少なくとも前記配線基板の電極の周辺部に、室温と硬化温度との間に粘度が最低となる特異温度を有する感光性熱硬化型接着剤をフォトリソグラフィーによりパターニングして接着剤層を形成する第1ステップと、
キャリア基板の一面に設けられた前記複数のLEDチップを夫々、前記配線基板の前記LEDチップ実装部に位置付ける第2ステップと、
前記配線基板を前記接着剤層の前記特異温度以下の温度に加熱して粘度を低下させた状態で、前記キャリア基板と前記配線基板とを相対的に加圧して前記LEDチップを前記接着剤層内に埋め込んだ後、前記配線基板を冷却して前記LEDチップを前記LEDチップ実装部に仮実装する第3ステップと、
前記キャリア基板から前記LEDチップを剥離する第4ステップと、
前記第2〜第4ステップを繰り返し実施して前記配線基板の別のLEDチップ実装部に別のLEDチップを仮実装する第5ステップと、
前記配線基板を前記特異温度以下の温度に加熱して前記接着剤層の粘度を低下させた状態で、仮実装された前記LEDチップを一括して押圧し、前記LEDチップの電極と前記配線基板の電極とを電気的に接触させる第6ステップと、
前記接着剤層を加熱硬化し、前記LEDチップと前記配線基板との導通状態を維持して前記LEDチップを前記配線基板に接着固定する第7ステップと、
を実行することを特徴とするLEDチップ実装方法。 This is an LED chip mounting method in which a plurality of LED chips are mounted on a wiring board for an LED display panel.
In a plurality of LED chip mounting portions on the wiring board on which the LED chips are mounted, at least the peripheral portion of the electrodes of the wiring board has a specific temperature having a minimum viscosity between room temperature and curing temperature. The first step of patterning a thermosetting adhesive by photolithography to form an adhesive layer,
A second step of locating the plurality of LED chips provided on one surface of the carrier board at the LED chip mounting portion of the wiring board, respectively.
In a state where the wiring board is heated to a temperature equal to or lower than the specific temperature of the adhesive layer to reduce the viscosity, the carrier substrate and the wiring board are relatively pressurized to attach the LED chip to the adhesive layer. The third step of cooling the wiring board and temporarily mounting the LED chip on the LED chip mounting portion after embedding in the inside.
The fourth step of peeling the LED chip from the carrier substrate and
The fifth step of repeating the second to fourth steps to temporarily mount another LED chip on another LED chip mounting portion of the wiring board, and the fifth step.
With the wiring board heated to a temperature equal to or lower than the specific temperature to reduce the viscosity of the adhesive layer, the temporarily mounted LED chips are collectively pressed, and the electrodes of the LED chips and the wiring board are pressed together. The sixth step of electrically contacting the electrodes of
The seventh step of heat-curing the adhesive layer, maintaining the conductive state between the LED chip and the wiring board, and adhering and fixing the LED chip to the wiring board.
LED chip mounting method characterized by executing.
Priority Applications (2)
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PCT/JP2020/023166 WO2020262034A1 (en) | 2019-06-28 | 2020-06-12 | Electronic component mounting structure, method for mounting same, and method for mounting led chip |
TW109120725A TW202115927A (en) | 2019-06-28 | 2020-06-19 | Electronic component mounting structure, method for mounting same, and method for mounting led chip |
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