JP2020512480A - Magnet structure, magnet unit, and magnetron sputtering apparatus including the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnet structure capable of preventing local excessive erosion of a target and improving inner surface distribution, and a magnetron sputtering apparatus including the magnet structure. The present invention relates to a magnet and the like that can be used in a magnetron sputtering apparatus, and a magnet structure of the magnetron sputtering apparatus of the present invention includes a permanent magnet and a wire provided so as to surround the permanent magnet. [Selection diagram] Figure 1

Description

  The present invention relates to a magnet structure and the like that can be used in a magnetron sputtering apparatus, and more particularly to a magnet structure and a magnet unit that can improve the uniformity even during a sputtering process, and a magnetron sputtering apparatus including the same.

  A sputtering apparatus is an apparatus for depositing a thin film on a substrate when manufacturing a semiconductor, FPD (LCD, OLED, etc.) or solar cell. In addition, the sputtering apparatus can be used also in a roll-to-roll apparatus. A magnetron sputtering device, which is one of the sputtering devices, injects a gas into a chamber in a vacuum state to generate plasma, and causes ionized gas particles to collide with a target material to be deposited. From the technique of depositing particles sputtered by collisions onto the substrate. Here, in order to form a magnetic force line on the target, a magnet unit is arranged on the rear surface of the target facing the substrate. That is, the arrangement is such that the substrate is provided on the front surface of the target and the magnet unit is provided on the rear surface of the target.

  Such a magnetron sputtering apparatus is widely used because of its advantage that a thin film is manufactured at a relatively low temperature, ions accelerated by an electric field are densely deposited on a substrate, and a deposition rate is high.

  On the other hand, in-line or cluster systems are used to deposit thin films on large area substrates. In the in-line and cluster system, a plurality of processing chambers are provided between a load chamber and an unload chamber, and a substrate loaded in the load chamber performs a continuous process while passing through the plurality of processing chambers. In such an in-line and cluster system, the sputtering apparatus is installed in at least one processing chamber, and the magnet units are installed at a certain distance.

  However, since there is a fixed magnetic field due to the magnet unit, the erosion of the target surface is determined by the plasma density due to the electric field and the magnetic field. Particularly, in the magnet unit, since the ground potential is concentrated at the edge, that is, at least one end in the longitudinal direction, the plasma density at the edge of the substrate is larger than that in other areas, which causes the edge of the target to be in another area. The sputtering speed is faster than that of. Therefore, there is a problem that the thickness distribution of the thin film deposited on the substrate is not uniform and the film quality distribution deteriorates, and the use efficiency of the target decreases due to excessive erosion of a specific part of the target due to the difference in plasma density. Occurs.

  In order to solve such a problem, there is a method of using a target whose edge portion is thicker than its central portion. In order to manufacture such a target, it is necessary to process the flat target by using an additional process such as polishing the central portion of the flat target to reduce its thickness. However, there is a problem in that the planar target is processed to cause a loss of material and an additional process causes a cost. In addition, there is a possibility that a problem such as damage to the target may occur in the process of processing the target.

  Different methods to solve the problem include adjusting the magnetic field strength on the surface of the target using a shunt, adjusting the distance using a liner on the edge of the magnet, or the edge of the magnet. There is a method of adding a Z-axis motor to the position. However, all of these methods increase the manufacturing cost, and the magnetic field strength must be manually adjusted, and since the magnetic field strength is not locally adjusted, several repeated operations are required, There is a problem that it takes a lot of work time.

  It is an object of the present invention to provide a magnet structure capable of preventing local excessive erosion of a target and improving the inner surface distribution, and a magnetron sputtering apparatus including the magnet structure.

  An object of the present invention is to generate a uniform magnetic field as a whole, and to perform a local magnetic field adjustment without any additional process or manual labor, and a magnetron sputtering apparatus including the same. To provide.

  Another object of the present invention is to adjust the magnetic field strength without opening the chamber while maintaining the vacuum degree of the magnetron sputtering apparatus. It is an object of the present invention to provide a magnet structure capable of changing a magnetic field significantly and easily controlling the change, and a magnetron sputtering apparatus including the magnet structure.

   The magnet structure of the magnetron sputtering apparatus of the present invention includes a permanent magnet and a wire wound around the permanent magnet.

   The magnet structure of the magnetron sputtering apparatus according to an exemplary embodiment of the present invention may control at least one of the voltage and the current applied to the wire to control the strength of the magnetic field of the magnet structure.

   According to an exemplary embodiment of the present invention, the permanent magnet may be horizontally extended from a first portion vertically extended to surround the wire and at least one of an upper end and a lower end of the first portion. A second portion that is extended and not surrounded by the wire.

   According to an embodiment of the present invention, the horizontal length of the second portion is larger than the sum of the horizontal length of the cross section of the first portion and the total thickness of the wire cross section.

   According to an exemplary embodiment of the present invention, the second portion may include one or more vertically extending branch portions.

   According to an embodiment of the present invention, the permanent magnet may be any one selected from the group consisting of a T-type structure, an I-type structure, an E-type structure, and an F-type structure.

   A magnet unit of a magnetron sputtering apparatus of the present invention includes a yoke and a plurality of magnet structures provided on the yoke according to any one of claims 1 to 6, and the plurality of magnet structures. The bodies may be connected to each other in a series structure, a parallel structure, or a structure including both.

  A magnet unit of a magnetron sputtering apparatus according to an embodiment of the present invention adjusts one or more of a voltage and a current applied to each wire of the magnet structure, and at least one region of the magnet unit is different from the other region. It can be controlled to have different magnetic field strengths.

   According to an embodiment of the present invention, the plurality of magnet structures include a first magnet group having one magnetic pole selected from N pole or S pole and the first magnet group of N pole or S pole. And a second magnet group having different magnetic poles.

   According to an embodiment of the present invention, the second magnet group may be disposed outside the first magnet group.

   The magnetron sputtering device of the present invention, a substrate mounting part on which a substrate is mounted, one or more magnet parts facing the substrate mounting part and separated by a predetermined distance, the substrate mounting part and a magnet. And one or more target portions provided between the magnet portions, and the magnet portion includes one or more magnet units according to any one of claims 7 to 10.

   According to an embodiment of the present invention, the distance between the upper surface of the permanent magnet of the magnet unit and the upper surface of the target unit may be 30 mm to 90 mm.

   According to an embodiment of the present invention, the magnet unit may further include cooling means provided on at least one side of the magnet structure.

  According to an exemplary embodiment of the present invention, the magnet unit may further include a molding unit that unitizes the yoke, the magnet structure, and the cooling unit.

  When the magnet structure and the magnet unit provided in the embodiment of the present invention are used, it is possible to prevent local excessive erosion of the target in the magnetron sputtering apparatus and improve the in-plane distribution.

  In addition, the magnetron sputtering apparatus according to the embodiment of the present invention has an effect that a uniform magnetic field is generated, and local magnetic field adjustment is possible without additional steps or manual labor.

  Also, according to an embodiment of the present invention, the magnetic field strength can be adjusted using the voltage and current applied to the wrapped wire. In particular, the magnetic field strength of a partial area of the magnet can be locally adjusted or the magnetic field strength of the entire area of the magnet can be adjusted via an external control device. That is, there is an effect that the magnetic field strength formed by a simple method can be adjusted outside the apparatus while maintaining the vacuum inside the sputtering apparatus.

It is a sectional view showing roughly the structure of each magnet structure concerning one embodiment of the present invention. It is a sectional view showing roughly the structure of each magnet structure concerning one embodiment of the present invention. It is a sectional view showing roughly the structure of each magnet structure concerning one embodiment of the present invention. It is a top view which shows roughly the structure of the magnet unit which concerns on one Embodiment of this invention. It is a top view which shows roughly the structure of the magnet unit which concerns on one Embodiment of this invention. It is a sectional view showing a part of structure which looked at each magnet unit concerning one embodiment of the present invention from the direction of the x-axis. It is a sectional view showing a part of structure which looked at each magnet unit concerning one embodiment of the present invention from the direction of the x-axis. It is a sectional view showing a part of structure which looked at each magnet unit concerning one embodiment of the present invention from the direction of the x-axis. It is sectional drawing which shows roughly the structure of the magnetron sputtering apparatus which concerns on one Embodiment of this invention. It is sectional drawing which shows schematically the structure which looked at the magnet unit contained in the magnetron sputtering apparatus which concerns on one Embodiment of this invention from the y-axis direction.

  Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, various modifications are made to the embodiments, and the scope of rights of the patent application is not limited or limited by such embodiments. It is to be understood that all changes, equivalents or alternatives to the embodiments are included in the scope of right.

  The terminology used herein is used only to describe a particular embodiment and is not intended to limit the invention. A singular expression includes plural expressions unless the context clearly dictates otherwise. In this specification, terms such as “comprising” and “having” mean that the features, numbers, steps, operations, components, parts, or combinations thereof described above are present. It is to be understood that the presence or possibility of existence of one or more other features or numbers, steps, acts, components, parts, or combinations thereof, is not precluded in advance.

  Unless defined differently, all terms used herein, including technical or scientific terms, are the same as commonly understood by one of ordinary skill in the art to which this embodiment belongs. Has meaning. Pre-defined terms that are commonly used are to be interpreted as having meanings consistent with their meanings in the context of the relevant art, and unless otherwise explicitly defined herein, ideally or excessively It is not interpreted as a formal meaning.

  Further, in the description with reference to the accompanying drawings, the same components are denoted by the same reference numerals regardless of the reference numerals of the drawings, and duplicated description thereof will be omitted. In the description of the embodiment, a detailed description of known technologies related to the related art will be omitted when it may make the subject matter of the embodiment unclear.

[Magnet structure]
The magnet structure of the magnetron sputtering apparatus of the present invention includes a permanent magnet and a wire provided so as to surround the permanent magnet.

  The magnet structure may include a permanent magnet and a wire wound around the permanent magnet. Here, the magnetic field is determined by the voltage and current applied to the wire, such as the number of windings of the wire wound around the permanent magnet and the material (that is, resistance) of the wire.

  The permanent magnet may be formed of, for example, an anisotropic or isotropic sintered magnet containing neodymium, iron, and boron as main components, a samarium-cobalt magnet, or a ferrite-based material. On the other hand, a part of the surface of such a permanent magnet may be coated with a corrosion preventing material or an insulating material, and the whole surface may be coated with an insulating material.

  According to one embodiment of the magnet structure provided by the present invention, a method of winding a wire directly on a permanent magnet is used. In order to easily understand the features of the present invention, one comparative example is proposed. A comparative example relating to a similar magnet structure that can be compared with the present invention is a method of disposing and forming an electromagnet having a wire wound around a bobbin on a permanent magnet. The method of forming the magnet structure of the present invention has an advantage that the distance between the permanent magnet and the target is shorter than the method of the comparative example. Thereby, there is an advantage that the strength of the magnetic field formed can be enhanced as compared with the method of the comparative example. Further, there is an effect that the height of the winding portion around which the wire can be wound becomes long, and there is an effect that the rate of change of the magnetic field can be improved.

  The magnet structure of the magnetron sputtering apparatus according to an embodiment of the present invention can control one or more of the voltage and the current applied to the wire to control the magnetic field strength of the magnet structure.

  The number of windings of the wire and the material of the wire are variables that are fixedly determined when designing the magnet unit of the first magnetron sputtering device, and the applied voltage and current flow in the process of driving the magnetron sputtering device. It is a parameter that can be adjusted dynamically. Therefore, the magnet structure provided by the present invention can control the strength of the magnetic field in the vacuum chamber as intended by adjusting the voltage and current applied to the wire with the external power supply.

  Further, in the magnet structure of the present invention, by directly winding a wire around a permanent magnet like an electromagnet, the strength of the magnetic field can be adjusted when only the conventional permanent magnet is used, and a strong magnetic field can be generated. By forming a coiled wire structure on the permanent magnet, an entirely uniform magnetic field can be generated. That is, when only the conventional permanent magnet was used, the magnetic field strength was not uniform and the erosion near the edge of the target was large, but the local magnetic field strength is adjusted by coupling the winding wire structure to the permanent magnet. It is possible to prevent local erosion of the target.

  1A to 1C, 2 and 3 are cross-sectional views schematically showing the structure of each magnet structure according to an embodiment of the present invention. Hereinafter, the structure and function of each magnet structure shown in each drawing will be described in detail with reference to FIGS. 1A to 1C, 2 and 3.

  According to an embodiment of the present invention, the permanent magnet 100 may include one of a first portion 110 that is vertically extended to surround the wire 200, and one of an upper end portion and a lower end portion of the first portion. As described above, the second portion 120 is formed so as to be extended in the horizontal direction and not surrounded by the wire.

  The permanent magnet of the present invention is classified into a part where the wire is surrounded and a part where the wire is not surrounded. For the purpose of explaining the present invention, a region of the permanent magnet including a portion surrounded by the wire is referred to as a first portion, and a region including a remaining portion of the permanent magnet excluding the first portion not surrounded by the wire is referred to as a second portion.

  The first portion may have a pillar-like structure extending in the vertical direction. A wire contacts and is surrounded by the first portion. The wire winds the pillar at least once. That is, the wire may be in contact with the vertical column structure and wrapped around the column. Therefore, the height of the surrounding wire is determined according to the vertical length of the first portion.

  Here, the cross-section of the pillar may have a circular, quadrangular, pentagonal, or hexagonal structure, and the shape of the pillar on which the wire can be wound is not particularly limited in the present invention. There is no such thing. A wire is wound around at least a part of the first portion extended in the vertical direction.

  The second portion may extend horizontally from the upper end portion, the lower end portion, or both of the first portion. The second portion is formed of an insulator for preventing a short circuit due to a relationship with an adjacent magnet structure in a process of manufacturing a magnet unit that is horizontally extended and is formed by connecting a plurality of magnet structures. Perform a function. Since the wire through which the current flows is also provided in the adjacent magnet structure, the second portion is formed to extend in the horizontal direction, and it is possible to prevent a problem that occurs between the wires directly contacting each other.

  The second portion is extendedly formed on both sides of the first portion in the horizontal direction. The lengths of the second portions extending from the upper end portion, the lower end portion, or both of the first portion to both sides may be the same. As an example, the first portion may be located at the center of the second portion. In addition, depending on the design, the lengths of the second portions extended on both sides may be different from each other. Here, the first portion may not be located at the center of the second portion.

  According to one embodiment of the present invention, the horizontal length of the second portion (I in FIG. 1 (a)) is the horizontal length of the first partial cross section (II in FIG. 1 (a)). ), And the total thickness of the wire cross section (III + III ′ in FIG. 1A)).

  When a plurality of magnet structures are arranged, the magnets are arranged when the horizontal length of the second portion is larger than the sum of the horizontal length of the first partial cross section and the total thickness of the wire cross section. Make sure that the wire 200 of the structure does not contact the wire of the adjacent magnet structure. Accordingly, there is an effect that it is possible to prevent a risk that a short circuit occurs due to the wires through which current flows and the wires contacting each other. By thus forming the horizontal length of the second portion to be larger than the total horizontal length of the first partial cross section and the total thickness of the wire cross section, a plurality of magnet structures of the present invention are connected. Insulation is also performed between the plurality of magnet structures.

  On the other hand, the number of windings of the wire increases as the length of the first portion in the vertical direction is longer and the length of the second portion in the horizontal direction is longer. This is because the longer the vertical direction of the first portion, the larger the area of the first portion around which the wire is wound. This is also because the longer the horizontal length of the second portion is, the thicker the total thickness of the wire cross section formed by winding the wire is.

  According to an exemplary embodiment of the present invention, the second portion 120 includes one or more branch portions 122 formed to extend in the vertical direction.

  Meanwhile, the second portion may be formed with one or more branch portions extending vertically as shown in FIGS. 2 and 3. The branch part may be formed by connecting both ends of the second part extending in the horizontal direction as shown in FIG. When the branch portions are extendedly formed at both ends of the second portion, an E-like structure laid 90 degrees is formed.

  In addition, the branch portion is formed by being connected as shown in FIG. 3 only at one end of the second portion extending in the horizontal direction. When the branch portion is extendedly formed at one end of the second portion, an F-shaped structure laid 90 degrees is formed.

  On the other hand, the branch portion may be extended and formed at a part of the second portion, and does not necessarily have to be formed at the end of the second portion. Further, it is not always necessary to form only one or two branch portions. Here, the vertical length of the branch portion may be the same as the vertical length of the first portion 110, as shown in FIGS. 2 and 3. The vertical length of the branch portion may be variously modified according to design convenience, and may be longer or shorter than the vertical length of the first portion.

  According to an embodiment of the present invention, the permanent magnet may be any one selected from the group consisting of a T-type structure, an I-type structure, an E-type structure, and an F-type structure.

  As shown in FIG. 1A, the second portion has a structure extending from the upper end of the first portion. In this case, the permanent magnet forms a T-shaped structure.

  In addition, the second portion may have a structure in which it is entirely extended from the upper end portion and the lower end portion of the first portion, as shown in FIG. The permanent magnet forms an I-shaped structure. Here, the upper and lower structures of the second portion 120 have the same length and width. In addition, one of the upper and lower structures (120 in FIG. 1 (b)) may be provided with a length longer or shorter than one of the other, a wide width or a narrow width.

  In addition, the second portion may have a structure in which it is extended and formed only from the lower end portion of the first portion, as shown in FIG. 1C, depending on design needs. In this case, the permanent magnet may form an inverted T-shaped structure, that is, a structure having a shape like “┴”.

  The wire of the present invention is made of a conductive material. The wire 200 is made of a conductive material such as aluminum or copper having a predetermined thickness. The surface of the wire is coated with an insulating material. For example, enamel, polymer, etc. may be coated on the surface of the conductive wire. The wire may be wound a predetermined number of times to wind the first portion of the permanent magnet. The number of windings, the thickness, the material (that is, resistance), the material, and the shape of the permanent magnet of the wire are primary factors that determine the magnetic field strength formed by the magnet structure of the present invention. Become. Then, the magnetic field strength of the magnet structure is controlled by adjusting the voltage and the current applied to the wire after the winding, which determines the magnetic field strength formed by the magnet structure of the present invention. It becomes the next factor. Therefore, a magnetic field having a desired strength can be realized by comprehensively controlling the primary factor and the secondary factor.

  On the other hand, the wire may be composed of a single layer and may surround the permanent magnet, or at least two layers may be formed to surround the permanent magnet.

  The magnet structure shown in FIGS. 1A to 1C shows a structure in which the wire 200 is wound three times around the first portion 110 of the permanent magnet. That is, a wire is wound around the first portion in triple layers.

[Magnet unit]
Hereinafter, a magnet unit formed so as to include a plurality of the above-mentioned magnet structures on the yoke will be described. The following magnet unit is a kind of magnet unit, and the formed magnet unit can be used as a unit in the magnet part of the magnetron sputtering device, but a plurality of magnet units are provided and the magnetron sputtering device can be arranged in various ways. You may form a magnet part.

  4 and 5 are plan views schematically showing the structure of the magnet unit according to the embodiment of the present invention. Hereinafter, the magnet unit and the first magnet group and the second magnet group formed on the yoke of the magnet unit will be described with reference to FIGS. 4 and 5. The following first magnet group and second magnet group are formed by connecting a plurality of magnet structures.

  The yoke 310 has a flat plate shape or a cylindrical shape. The yoke 310 may be made of ferritic stainless steel, for example. The first magnet group 20 and the second magnet group 30 are provided on one surface or surface of the yoke 310 to form a magnet unit. That is, the first magnet group and the second magnet group may be provided on one surface of the flat plate-shaped yoke 310, or the first magnet group and the second magnet group may be provided on the surface of the cylindrical yoke. Here, the formed magnet unit may include a first magnet group and a second magnet group, and is arranged like one of the forms of the magnet unit shown in FIGS. 4 and 5. Further, two or more of the forms of the magnet unit shown in FIGS. 4 and 5 may be connected and arranged. On the other hand, the magnet unit may be arranged in a form different from the form of the magnet unit shown in FIGS. 4 and 5.

  The arrangement of the first magnet group and the second magnet group will be described in detail. The first magnet group 20 is fixed to the central portion of the yoke 310, and the second magnet group 30 is separated from the first magnet group. It is fixed around the outside of the magnet group. Here, the height and width of the first magnet group and the second magnet group may be the same. However, the width of the first magnet group may be wider or narrower than the second magnet group, and the height of the first magnet group may be higher or lower than the height of the second magnet group. Accordingly, the width and height can be variously modified.

  The first magnet group is formed at a predetermined height from one surface of the yoke and is provided in a linear shape or a closed loop shape. That is, the first magnet group may be provided in a linear form having a predetermined length and width as shown in FIG. 4, or may be provided in a closed loop form as shown in FIG. In the case of a linear form, that is, it may be provided in a substantially bar shape having a predetermined width in the x-axis direction and a predetermined length in the y-axis direction orthogonal to the x-axis direction. Here, the x-axis direction may be the same as the moving direction of the substrate in the magnetron sputtering apparatus. As shown in FIG. 5, the first magnet group 20 in the closed loop form includes the first long side portions and the second long side portions 22a and 22b, which have the same length and are separated from each other by a predetermined distance, and the first long side portion and the first long side portion. The first short side portion and the second short side portions 24a and 24b are formed at the edges of the two long side portions so as to connect the first long side portion and the second long side portion. Here, the first short side portion and the second short side portion are provided in a linear shape and connect the edges of the first long side portion and the second long side portion. Therefore, the first magnet group 20 is provided such that the long side portion and the short side portion have a rectangular shape. However, the first magnet group may be provided not only in a rectangular shape but also in various shapes having a circular shape or a closed loop shape. For example, the edge portion where the long side portion and the short side portion contact may be formed in a round shape. Further, the long side portion of the first magnet group may be provided at a predetermined distance from the central portion of the yoke.

  The second magnet group 30 is separated from the first magnet group 20 by a predetermined distance and is provided outside the first magnet group 20. As an example of the present invention, the second magnet group 30 may be provided outside the first magnet group 20 forming a linear or closed loop shape. Such a second magnet group may be provided in a shape different from or similar to the first magnet group. The second magnet group is provided in a closed loop shape. As shown in FIG. 5, the second magnet group having a closed loop shape is separated from the first long side portions and the second long side portions 22a and 22b of the first magnet group by a predetermined distance and is longer than the third long side portion. And fourth long side parts 32a and 32b are provided, and the third short side part is connected to the third long side part and the fourth long side part at the edges of the third long side part and the fourth long side part. And fourth short side portions 34a and 34b are provided. Therefore, the second magnet group 30 is provided so as to surround the first magnet group 20 while the long side portions 32a and 32b and the short side portions 34a and 34b have a rectangular shape. However, the second magnet group 30 may be provided not only in a rectangular shape but also in various shapes having a closed loop shape. For example, the edge portion where the long side portion and the short side portion contact each other may be formed in a round shape.

  On the other hand, the magnet structures forming the first magnet group and the second magnet group are formed to have polarities different from each other. That is, if the permanent magnet forming the first magnet group is the N pole, the permanent magnet forming the second magnet group is the S pole, and if the permanent magnet of the first magnet group is the S pole, The permanent magnet of the two magnet group has a north pole.

  Therefore, if the first magnet group 20 has the shape of a letter as shown in FIGS. 4 and 5, the permanent magnets of the magnet unit have an S-N-S arrangement or an N-S-N arrangement. Have. Further, if the first magnet group has a closed loop configuration as shown in FIG. 6, the permanent magnets of the magnet unit may have an S-N-N-S arrangement or an N-S-S-N arrangement. Have. However, the present invention includes not only a case where a plurality of magnet units each including two magnets having different polarities are provided, but also a case where a plurality of magnets are arranged so as to have different polarities. ..- S-N magnets are arranged.

  A magnet unit of the magnetron sputtering apparatus of the present invention includes a yoke and a plurality of magnet structures provided on the yoke according to one embodiment of the present invention, and the plurality of magnet structures are in series with each other, It is connected and arranged in a parallel structure or a structure including both.

  As described above, the plurality of magnet structures provided in the embodiment of the present invention are provided to form a magnet unit. Here, the magnet structure may be provided on the yoke, and the plurality of magnet structures may form a structure in which they are connected in series or in parallel. A magnet unit having an arrangement of the magnet structure as shown in any one of FIGS. 1A to 1C, 2 and 3 may be formed on the yoke. The number of magnet structures included in the magnet unit is determined according to the size of the sputtering device. If sputtering is required on a large area substrate, a magnet unit containing more magnet structures may be needed.

  6 to 8 are cross-sectional views schematically showing the structure of each magnet unit according to the embodiment of the present invention as viewed from the x-axis direction.

  In the case of FIG. 6, a structure in which the magnet structures including the T-shaped permanent magnets shown in FIG. 1A are repeatedly arranged so as to be adjacent to each other is illustrated. Referring to FIG. 6, the structure in which the magnet structure is fixed on the yoke 310 by the adhesive layer 320 can be confirmed. Thus, an adhesive layer may be formed between the magnet structure and the yoke by using an adhesive in order to secure the fixed structure. Although not shown, the fixed structure can be secured by fixing the space between the magnet structure and the yoke with a bolt. In addition to using an adhesive or using a bolt as a method for fixing the magnet structure on the yoke in the present invention, various additional means may be used. In the case of FIG. 7, the magnet structure including the T-shaped permanent magnet illustrated in FIG. 1A and the magnet structure including the E-shaped permanent magnet illustrated in FIG. The arranged structure is shown.

  In the case of FIG. 8, the structure in which the magnet structures including the E-shaped permanent magnets shown in FIG. 2 are repeatedly arranged so as to be adjacent to each other is illustrated.

  Here, each of the magnet structures formed on the yoke may be connected and arranged in a series structure, a parallel structure, or a structure including both of them.

  A magnet unit of a magnetron sputtering apparatus according to an embodiment of the present invention adjusts one or more of a voltage and a current applied to a wire of each of the magnet structures, and at least one region of the magnet unit is the other region. Can be controlled to have different magnetic field strengths.

  As a specific example, by providing an individual power source, a high current is applied to the magnet structures located in the one region, and a low current is applied to the magnet structures located in the other region, so that one region of the magnet unit is And other regions can be controlled to have different magnetic field strengths. As a further example, by providing a switch or a relay capable of interrupting a current flowing through a wire provided in a magnet structure located in one region and a magnet structure located in another region to control circuit connection, the magnet It is possible to control so that one region and another region of the unit have different magnetic field strengths.

  According to an embodiment of the present invention, the plurality of magnet structures include a first magnet group having one magnetic pole selected from N pole or S pole, and the first magnet group having N pole or S pole. It includes a second magnet group having a magnetic pole different from the one magnet group.

  According to an embodiment of the present invention, the second magnet group is arranged outside the first magnet group.

[Magnetron sputtering equipment]
The magnetron sputtering apparatus described in the present invention includes at least one magnet unit, and the magnet unit is provided with at least one magnet unit described above. Hereinafter, the magnetron sputtering apparatus and each part constituting the magnetron sputtering apparatus will be described.

  FIG. 9 is a sectional view schematically showing the structure of a magnetron sputtering apparatus according to an embodiment of the present invention.

  Referring to FIG. 9 showing a sputtering apparatus according to an exemplary embodiment of the present invention, the sputtering apparatus provided by the present invention includes a magnet unit 630, a backing plate 650, a target 640, and a substrate platform 620. A substrate 610, on which a sputtered layer is formed, is provided on the substrate platform. The magnet unit 630 also includes a yoke 310, a first magnet group in the center, and a second magnet group outside the first magnet group. Each of the magnet groups includes a permanent magnet 100 and a wire 200 around the permanent magnet.

  Here, the substrate platform 620 and the magnet unit 630 may be provided to face each other. Here, the substrate mounting part is provided on the upper side, the lower side, or the side part in the apparatus, and the magnet unit is provided so as to face the substrate mounting part. For example, if the substrate platform is provided on the lower side, the magnet unit is provided on the upper side, and if the substrate platform is provided on the upper side, the magnet unit is provided on the lower side. Further, when the substrate mounting portion is provided perpendicularly to the side surface, the magnet unit is provided on the other side surface facing this.

  The magnet unit 630 shown in FIG. 9 is provided so as to face the substrate, and includes a yoke 310, a central first magnet group formed on the yoke, and second magnets provided on the left and right sides of the first magnet group. Including a group. The first magnet group and the second magnet group include a structure in which a plurality of magnet structures are connected. In addition, although one magnet unit is illustrated in FIG. 9 as an example, two or more magnet units may be provided, and the magnet unit includes an x-axis direction, a y-axis direction orthogonal to the x-axis direction, and You may reciprocate in one or more directions among the z-axis directions that are all orthogonal to the x-axis direction and the y-axis direction.

  When depositing a thin film on a large-area substrate larger than the magnet unit, two or more magnet units 630 are provided. Here, at least two or more magnet units may be provided with the same size and the same structure, and may be separated by the same distance.

[Backing plate]
The backing plate 650 is provided between the magnet unit 630 and the substrate platform 620. Further, the target 640 is fixed to one surface of the backing plate. That is, the target is fixed to one surface of the backing plate facing the substrate 610. On the other hand, it is possible to provide the target on the upper side of the magnet unit without providing the backing plate.

[target]
The target 640 is fixed to the backing plate 650 and is made of a material deposited on the substrate 610. The target 640 may be a metal material or an alloy containing a metal material. Also, the target 640 can be a metal oxide, a metal nitride, or a dielectric.

  For example, the target is. Mg, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Pd, Pt, Cu, Ag, Au, Zn, Al, In, C, Si. Alternatively, a material containing an element selected from Sn and Sn as a main component may be used. Meanwhile, the backing plate 650 and the target 640 may be formed to have a total thickness of about 5 mm to 50 mm.

[Substrate rest]
The substrate platform 620 fixes the substrate so that the deposition material is uniformly deposited on the substrate 610. When the substrate is placed on the substrate placing part, the edge portion of the substrate may be fixed using a fixing means or the like, or the substrate may be fixed on the back surface of the substrate. The substrate mounting portion may be provided in a substantially square or circular shape having the shape of the substrate in order to support and fix the entire back surface of the substrate. In addition, in order to fix the edge portion of the substrate, the substrate mounting portion is provided with four bars having a predetermined length vertically and horizontally separated from each other by a predetermined distance. Is provided in the shape of a vacant square. On the other hand, the substrate platform may move in one direction with the substrate mounted. For example, a thin film may be deposited on the substrate while proceeding in one direction. Therefore, a moving means (not shown) for moving the substrate placing part may be provided on the surface of the substrate placing part where the substrate is not placed. The moving unit may include a roller that is moved in contact with the substrate mounting unit, a magnetic transfer unit that is moved away from the substrate mounting unit by a magnetic force, and the like. Of course, a part of the substrate platform may function as the moving means.

  Further, in the case of the stop type sputtering apparatus, the fixing means may not be required. Here, the substrate mounting portion 620. Lift pins for lifting the substrate 610 may be provided.

  However, in the case of vertical sputtering with a stationary sputtering apparatus, a fixing means for erecting and fixing the substrate is provided. On the other hand, the substrate is a substrate for manufacturing semiconductors, FPDs (LCD, OLED, etc.), solar cells and the like, and may be a silicon wafer, glass or the like. Further, the substrate may be a film type substrate applied to roll-to-roll. In this embodiment, a large area substrate such as glass is used as the substrate.

  The magnetron sputtering apparatus of the present invention includes a substrate mounting part on which a substrate is mounted, one or more magnet parts facing the substrate mounting part and spaced apart by a predetermined distance, and the substrate mounting part. The magnet unit may include one or more target units provided between the magnet unit and the magnet unit, and the magnet unit may include one or more magnet units according to an embodiment of the present invention.

  As an example of the present invention, the magnet portion may be provided within 30% in the longitudinal direction from the edge portion of the target portion.

  For example, the magnet portion may be arranged in a region within 30% of the most eroded portion of the target (that is, the longitudinal direction from the edge portion of the target). That is, although erosion of the target often occurs at the edge portion, the magnetic field strength can be controlled by providing a magnet structure at a position facing the edge portion and adjusting the voltage and current applied to the wire. As a result, it is possible to adjust the magnetic field strength of the portion of the target where erosion has occurred too much, form a uniform degree of erosion, and prevent a local excessive erosion phenomenon.

  According to an embodiment of the present invention, a distance between an upper surface of the permanent magnet of the magnet unit and an upper surface of the target unit may be 30 mm to 90 mm. The distance between the upper surface of the permanent magnet and the upper surface of the target portion is a value in consideration of the thickness of the target portion, the thickness of the backing plate, the distance between the backing plate and the magnet unit, etc. If the distance is less than 30 mm and is extremely close, plasma cannot be stably formed, resulting in a problem of poor magnetic field efficiency, and if it exceeds 90 mm and is extremely far, a weak magnetic field is formed around the target portion. Occurs. On the other hand, in the case of a magnetron sputtering apparatus that does not include a backing plate, the distance between the upper surface of the permanent magnet and the upper surface of the target portion can be further reduced by the thickness of the backing plate, but in this case, The distance between the upper surface of the permanent magnet and the upper surface of the target portion is reduced to about 10 mm.

FIG. 10 is a cross-sectional view schematically showing the structure of the magnet unit included in the magnetron sputtering apparatus according to the embodiment of the present invention as viewed in the y-axis direction.
FIG. 10 corresponds to a structure in which a cross section of a magnet unit in which a plurality of magnet structures including a T-shaped permanent magnet as shown in FIG.

  According to an embodiment of the present invention, the magnet unit further includes cooling means 410 provided on at least one side of the magnet structure.

  On the other hand, in the magnet structure included in the magnet unit of the magnetron sputtering apparatus according to the present invention, the magnet structure gradually heats when a predetermined current or voltage is applied to the wire. Therefore, cooling means for cooling the magnet structure is provided on at least one side of the magnet structure.

  Here, at least two or more magnet structures are connected and provided in the horizontal direction, and the cooling means 410 is provided between the permanent magnets arranged in the horizontal direction. The cooling means may include a coolant supply unit (not shown) that supplies water, air, or another coolant, and a coolant circulation path through which these can be circulated. The cooling means 410 shown in the embodiment shown in FIG. 10 is a refrigerant circulation path.

  According to an embodiment of the present invention, the magnet unit further includes a molding unit 510 that unitizes the yoke, the magnet structure, and the cooling unit.

  As shown in FIG. 10, the magnet structure including the cooling means is provided with a molding part so as to cover the yoke, the magnet structure, and the cooling means. The magnet structure may be manufactured in a module unit using the molding unit.

  According to an example of the present invention, the magnet unit regulates one or more of a voltage and a current applied to each of the magnet units, and at least one region of the magnet unit has a magnetic field strength different from other regions. Can be controlled.

  In the magnet unit described above, one or more of the voltage and the current may be adjusted for each magnet unit in the magnet unit included in the magnetron sputtering apparatus so that the voltage and the current applied to the wires of the magnet structures can be adjusted. As a specific example, it is possible to use a method in which an individual power supply supplies a current flowing through a wire provided in a magnet unit located in one region and a magnet unit located in another region. As a different example, the adjustment of the voltage and current may be performed using various means such as including a switch or a relay and forming a series or parallel circuit. Thereby, another magnetic field strength between the one region and the other region can be formed in the magnet portion.

  As described above, even if the embodiments are described by the limited embodiments and the drawings, a person having ordinary skill in the art can make various modifications and variations from the above description. . For example, the described techniques may be performed in a different order than the described methods, and / or the described components may be combined or combined in a different form than the described methods, or by other components or equivalents. Appropriate results can be achieved even if replaced.

  Therefore, the scope of the present invention is not limited to the disclosed embodiments, but is defined by the scope of the claims and equivalents thereof.

Claims (14)

With a permanent magnet,
A wire provided to wind the permanent magnet,
A magnet structure of a magnetron sputtering apparatus including.   The magnet structure of a magnetron sputtering apparatus according to claim 1, wherein one or more of a voltage and a current applied to the wire can be adjusted to control the strength of the magnetic field of the magnet structure.   The permanent magnet is vertically extended to surround the wire, and the permanent magnet is horizontally extended from at least one of an upper end and a lower end of the first part to surround the wire. The magnet structure of the magnetron sputtering apparatus according to claim 1, further comprising a second portion that is not included.   The magnet structure of the magnetron sputtering apparatus according to claim 3, wherein the horizontal length of the second portion is larger than the sum of the horizontal length of the cross section of the first portion and the total thickness of the wire cross section. body.   The magnet structure of the magnetron sputtering apparatus of claim 3, wherein the second portion includes one or more branch portions formed to extend in the vertical direction.   The magnet of the magnetron sputtering apparatus according to claim 1, wherein the permanent magnet is any one selected from the group consisting of a T-type structure, an I-type structure, an E-type structure, and an F-type structure. Structure. York
A plurality of magnet structures according to any one of claims 1 to 6 provided on the yoke,
Including,
The magnet unit of the magnetron sputtering apparatus, wherein the plurality of magnet structures are connected to each other in a series structure, a parallel structure, or a structure including both of them.   The method according to claim 7, wherein one or more of a voltage and a current applied to the wire of each of the magnet structures can be adjusted to control at least one region of the magnet unit to have a magnetic field strength different from other regions. Magnet unit for magnetron sputtering equipment. The plurality of magnet structures are
A first magnet group having one magnetic pole selected from N pole or S pole;
A second magnet group having a magnetic pole different from the first magnet group among N poles or S poles;
The magnet unit of the magnetron sputtering apparatus according to claim 7, which comprises:   The magnet unit of the magnetron sputtering apparatus according to claim 9, wherein the second magnet group is arranged outside the first magnet group. A substrate mounting portion on which the substrate is mounted,
One or more magnets provided facing the substrate rest and separated by a predetermined distance;
One or more target parts provided between the substrate mounting part and the magnet part;
Including,
The magnetron sputtering apparatus, wherein the magnet unit includes one or more magnet units according to any one of claims 7 to 10.   The magnetron sputtering apparatus according to claim 11, wherein a distance between an upper surface of the permanent magnet of the magnet unit and an upper surface of the target unit is 30 mm to 90 mm.   The magnetron sputtering apparatus according to claim 11, wherein the magnet unit further includes a cooling unit provided on at least one side of the magnet structure.   14. The magnetron sputtering apparatus according to claim 13, wherein the magnet unit further includes a molding unit that unitizes the yoke, the magnet structure, and the cooling unit into a unit module.