JP2020155771A - Optical device, lighting device, measuring device, component inspection device, robot, electronic apparatus, and movable body - Google Patents

Abstract

To provide an optical device that has reduced the radiation angle of a laser beam while reducing its thickness, a lighting device, a measuring device, a component inspection device, a robot, an electronic apparatus, and a movable body.SOLUTION: An optical device 100 comprises: a plurality of surface light emitting laser elements 159 that are provided on a first surface 141a of a substrate 141 and emit light in a direction intersecting the first surface 141a; a plurality of optical elements 162 that are arranged on a second surface 141b of the substrate 141 on the opposite side of the first surface 141a corresponding to the surface light emitting laser element 159; and an antireflection structure between the substrate 141 and the plurality of optical elements 162.SELECTED DRAWING: Figure 2

Description

The present invention relates to an optical device, a lighting device, a measuring device, a parts inspection device, a robot, an electronic device, and a moving body.

Vertical Cavity Surface Emitting Laser (VCSEL) elements are expected to be applied to high-power laser light sources because they have a small temperature dependence of the oscillation wavelength. Further, the VCSEL element can be easily formed into a two-dimensional array and is suitable for three-dimensional scanning of laser light. Then, a VCSEL chip in which a plurality of VCSEL elements are integrated has been developed as a high-power laser light source or a light source for three-dimensional laser scanning.

However, in the VCSEL chip, the emission angle of the laser beam emitted from each VCSEL element is large. Therefore, Patent Document 1 proposes a surface emitting laser in which a microlens is formed on a substrate of a VCSEL chip.

However, with the surface emitting laser described in Patent Document 1, it is difficult to process the microlens with high accuracy, and it is difficult to sufficiently reduce the radiation angle.

An object of the disclosed technique is to provide an optical device, a lighting device, a measuring device, a component inspection device, a robot, an electronic device, and a moving body capable of further reducing the radiation angle of a laser beam while reducing the thickness.

According to one aspect of the disclosed technique, a plurality of surface emitting laser elements provided on the first surface of the substrate and emitting light in a direction intersecting the first surface, and the first surface emitting laser element of the substrate. A plurality of optical elements arranged corresponding to the surface emitting laser element and an antireflection structure between the substrate and the plurality of optical elements are provided on a second surface opposite to the surface. Optical equipment is provided.

According to the disclosed technology, it is possible to further reduce the emission angle of the laser beam while reducing the thickness.

It is a top view which shows the optical apparatus which concerns on 1st Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 1st Embodiment. It is a top view which shows an example of the antireflection structure. It is sectional drawing which shows an example of the antireflection structure shown in FIG. 3A. It is sectional drawing (the 1) which shows the manufacturing method of the optical apparatus which concerns on 1st Embodiment. It is sectional drawing (the 2) which shows the manufacturing method of the optical apparatus which concerns on 1st Embodiment. It is sectional drawing (the 3) which shows the manufacturing method of the optical apparatus which concerns on 1st Embodiment. It is sectional drawing (the 4) which shows the manufacturing method of the optical apparatus which concerns on 1st Embodiment. It is sectional drawing (the 5) which shows the manufacturing method of the optical apparatus which concerns on 1st Embodiment. It is sectional drawing (the 6) which shows the manufacturing method of the optical apparatus which concerns on 1st Embodiment. It is sectional drawing (the 7) which shows the manufacturing method of the optical apparatus which concerns on 1st Embodiment. It is sectional drawing (the 8) which shows the manufacturing method of the optical apparatus which concerns on 1st Embodiment. It is sectional drawing (9) which shows the manufacturing method of the optical apparatus which concerns on 1st Embodiment. It is a top view which shows another example of the antireflection structure. It is sectional drawing which shows another example of the antireflection structure shown in FIG. 5A. It is a top view which shows still another example of the antireflection structure. 6 is a cross-sectional view (No. 1) showing still another example of the antireflection structure shown in FIG. 6A. 6 is a cross-sectional view (No. 2) showing still another example of the antireflection structure shown in FIG. 6A. It is a figure which shows an example of the arrangement of a VCSEL element and a microlens. It is sectional drawing which shows the optical apparatus which concerns on 2nd Embodiment. It is sectional drawing (the 1) which shows the manufacturing method of the optical apparatus which concerns on 2nd Embodiment. It is sectional drawing (the 2) which shows the manufacturing method of the optical apparatus which concerns on 2nd Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 3rd Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 4th Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 5th Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 6th Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 1st modification of 6th Embodiment. It is sectional drawing which shows the optical apparatus which concerns on the 2nd modification of 6th Embodiment. It is a top view which shows the optical apparatus which concerns on 7th Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 7th Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 8th Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 9th Embodiment. It is sectional drawing which shows the optical apparatus which concerns on 10th Embodiment. It is a figure which shows the use example of the measuring apparatus which concerns on eleventh embodiment. It is a figure which shows the robot which concerns on 12th Embodiment. It is a figure which shows the electronic device which concerns on 13th Embodiment. It is a figure which shows the moving body which concerns on 14th Embodiment. It is a figure which shows the moving body which concerns on 15th Embodiment. It is a figure which shows an example of the measuring apparatus.

Hereinafter, embodiments of the present disclosure will be specifically described with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration may be designated by the same reference numerals to omit duplicate explanations.

(First Embodiment)
First, the first embodiment will be described. The first embodiment relates to an optical device. FIG. 1 is a plan view showing an optical device according to the first embodiment. FIG. 2 is a cross-sectional view showing an optical device according to the first embodiment. FIG. 2 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIGS. 1 and 2, the optical device 100 according to the first embodiment is mounted on a mounting substrate 120, a VCSEL chip 140 mounted on the mounting substrate 120 and having a VCSEL element, and light emitted from the VCSEL element. Has an MLA 160 with a microlens 162 to which the light enters.

In the following description, unless otherwise specified, the direction in which the VCSEL chip 140 is located as viewed from the mounting board 120 is upward, and the direction in which the mounting board 120 is located as viewed from the VCSEL chip 140 is downward. However, the optical device 100 can be used in an upside-down state, and can be arranged at an arbitrary angle. Further, the plan view means that the object is viewed from the normal direction of the upper surface 140b of the VCSEL chip 140, and the planar shape refers to the shape of the object viewed from the normal direction of the surface 140b of the VCSEL chip 140. And.

Further, in each drawing, the normal direction of the surface 140b of the VCSEL chip 140 is the Z direction, the direction parallel to one side of the surface 140b of the VCSEL chip 140 in the plan view is the X direction, and the direction perpendicular to the X direction and the Z direction is Y. The direction.

[Structure of VCSEL Chip 140]
Here, the structure of the VCSEL chip 140 will be described. In the description of the structure of the VCSEL chip 140 and the method of forming the VCSEL chip 140 described later, the direction in which the mounting substrate 120 is located (−Z direction) with respect to the VCSEL chip 140 is upward.

As shown in FIGS. 1 and 2, a plurality of VCSEL elements 159 are arranged in an array on the surface 140a of the VCSEL chip 140 on the mounting substrate 120 side. Each VCSEL element 159 is monolithically manufactured on a substrate 141 such as an n-GaAs substrate, and the film configuration of each VCSEL element 159 is the same. Each VCSEL element 159 is, for example, a surface emitting laser element having an oscillation wavelength in the 940 nm band (about 940 nm ± 30 nm).

The VCSEL element 159 includes, for example, an n-distributed Bragg reflector (DBR) 143, a spacer layer 144, an active layer 145, a spacer layer 146, and p on a substrate 141 such as an n-GaAs substrate. It has a −DBR147 and a selective oxide layer 151. The selective oxide layer 151 includes an oxidized region 151a and a non-oxidized region 151b. The refractive index of the n-GaAs substrate is about 3.5.

The n-DBR143 is formed on the substrate 141. The n-DBR143 is, for example, a semiconductor multilayer film reflector configured by laminating a plurality of n-type semiconductor films. The n-DBR143 has, for example, a low refractive index layer made of n-Al _0.9 Ga _0.1 As and a high refractive index layer made of n-Al _0.2 Ga _0.8 As. The n-DBR143 has, for example, 30 pairs of a low refractive index layer and a high refractive index layer.

Between each refractive index layer of n-DBR143, a composition gradient layer having a thickness of, for example, 20 nm, in which the composition is gradually changed from one composition to the other, is provided in order to reduce the electric resistance. ing. The film thickness of each of the refractive index layers is set so as to include 1/2 of the adjacent composition gradient layer and have an optical thickness of λ / 4 when the oscillation wavelength is λ. When the optical thickness is λ / 4, the actual thickness D of the layer is D = λ / 4n (where n is the refractive index of the medium of the layer).

The spacer layer 144 is formed on the n-DBR143. The spacer layer 144 is, for example, a non-doped AlGaInP layer.

The active layer 145 is formed on the spacer layer 144. The active layer 145 is, for example, an active layer having a triple well structure having three quantum well layers and four barrier layers. For example, each quantum well layer is an InGaAs layer and each barrier layer is an AlGaAs layer.

The spacer layer 146 is formed on the active layer 145. The spacer layer 146 is, for example, a non-doped AlGaInP layer.

The portion including the spacer layer 144, the active layer 145, and the spacer layer 146 is also referred to as a resonator structure (resonator region), includes 1/2 of the adjacent composition gradient layer, and has a thickness of one wavelength (1 wavelength). It is set to have an optical thickness of λ). The active layer 145 is provided in the center of the resonator structure, which is a position corresponding to the antinode in the standing wave distribution of the electric field so that a high stimulated emission probability can be obtained.

The p-DBR 147 is formed on the spacer layer 146. The p-DBR147 is, for example, a semiconductor multilayer film reflector configured by laminating a plurality of p-type semiconductor films. The p-DBR147 has, for example, a low refractive index layer made of p-Al _0.9 Ga _0.1 As and a high refractive index layer made of p-Al _0.2 Ga _0.8 As. The p-DBR147 has, for example, 20 pairs of a low refractive index layer and a high refractive index layer.

Between each refractive index layer of p-DBR147, a composition gradient layer having a thickness of, for example, 20 nm, in which the composition is gradually changed from one composition to the other, is provided in order to reduce the electric resistance. ing. The film thickness of each of the refractive index layers is set so as to include 1/2 of the adjacent composition gradient layer and have an optical thickness of λ / 4 when the oscillation wavelength is λ.

A selective oxide layer 151 made of, for example, p-AlAs is inserted into p-DBR147 with a thickness of, for example, 30 nm. The insertion position of the selective oxide layer 151 can be, for example, within the pair of the second high refractive index layer and the low refractive index layer counting from the spacer layer 146. The selective oxide layer 151 may include layers such as a composition gradient layer and an intermediate layer above and below, and here, the layers that are actually oxidized are collectively referred to as a selective oxide layer.

The mesa 150 corresponding to the VCSEL element 159 is formed by removing the p-DBR 147, the spacer layer 146, the active layer 145, the spacer layer 144, and a part of the n-DBR 143 by etching.

An insulating layer 153 covering the mesa 150 is formed. As the material of the insulating layer 153, for example, SiN, SiON, SiO _{2 and the} like can be used. The insulating layer 153 is formed with an opening 154 that exposes a part of the p-DBR 147 at the top of each mesa 150 and an opening 156 that exposes a part of the n-DBR 143 at the bottom of the groove between the mesas 150. ing.

On the insulating layer 153, a p-side electrode 155 electrically connected to the p-DBR 147 through the opening 154 is formed independently for each mesa 150. As the p-side electrode 155, for example, a laminated film in which Ti / Pt / Au are laminated in order from the p-DBR147 side can be used.

On the insulating layer 153, an n-side electrode 157 electrically connected to the n-DBR 143 through the opening 156 is formed. As the n-side electrode 157, for example, a laminated film in which a gold germanium alloy (AuGe) / nickel (Ni) / gold (Au) is laminated in order from the n-DBR143 side can be used.

An n-contact layer such as an n-GaAs layer may be provided between the n-side electrode 157 and the n-DBR143, and a p-GaAs layer or the like may be provided between the p-side electrode 155 and the p-DBR147. P-contact layer may be provided.

[Structure of MLA160]
Next, the MLA 160 will be described. In the first embodiment, the MLA 160 has a plate-shaped base portion 161 and a plurality of microlenses 162 provided in an array at positions corresponding to each VCSEL element 159 of the base portion 161. The microlens 162 is arranged so that the optical axis passes through the light emitting region 148 of the VCSEL element 159. The material of the MLA 160 is a material through which the laser beam emitted by the VCSEL element 159 is transmitted and the refractive index is lower than the refractive index of the substrate 141. The material of MLA160 is, for example, a resin material such as an epoxy resin or an acrylic resin, or an inorganic material such as SiO ₂ . Glass may be used as the inorganic material. The refractive index of MLA160 is, for example, about 1.5. Each microlens 162 is formed so that a desired beam can be formed on the radiation pattern of the VCSEL element 159. For example, the lens diameter is about 50 μm and the radius of curvature is about 70 μm. Further, for example, the height (lens thickness) of the apex of the microlens 162 from the surface 140b is about 100 μm, and the height (sag amount) from the upper surface of the base portion 161 is about 15 μm. The microlens 162 is an example of an optical element.

The optical device 100 has an antireflection structure between the VCSEL chip 140 and the MLA 160. The antireflection structure is, for example, a sub-wavelength structure having a period smaller than the oscillation wavelength (for example, 940 nm) of the VCSEL element 159. FIG. 3A is a plan view showing an example of the antireflection structure, and FIG. 3B is a cross-sectional view showing an example of the antireflection structure shown in FIG. 3A. FIG. 3B corresponds to a cross-sectional view taken along line II-II in FIG. 3A.

For example, as shown in FIGS. 3A and 3B, an antireflection structure 163 is provided on the MLA160-side surface (second surface) 141b (surface 140b of the VCSEL chip 140) of the substrate 141, for example, having a height of about 100 nm. Grooves 164A having a triangular cross-sectional shape are formed at a constant pitch of about 200 nm. The grooves 164A extend in the Y direction and are one-dimensionally arranged in the X direction. The pitch of the grooves 164A may be irregular.

[Structure of Optical Device 100]
On the surface 120a of the mounting substrate 120 facing the surface 140a, an electrode to which the n-side electrode 157 is bonded (not shown) and an electrode to which the p-side electrode 155 is bonded (not shown) are formed. There is. Then, the VCSEL chip 140 is flip-chip mounted on the mounting board 120. The mounting board 120 can include, for example, an Al ₂ O ₃ board or an Al N board.

In the optical device 100 configured in this way, in each VCSEL element 159, the laser beam 149 is generated in the light emitting region 148 of the resonator structure (resonator region) that overlaps with the non-oxidized region 151b in a approximately plan view. , The laser beam 149 is incident on the microlens 162 from the VCSEL element 159. Since the antireflection structure 163 is formed on the surface 141b, the laser beam 149 can be incident on the microlens 162 with almost no reflection at the interface between the substrate 141 and the microlens 162. The microlens 162 reduces the emission angle of the laser beam 149 and emits the laser beam 149 as substantially parallel light.

Further, since the antireflection structure 163 including the groove 164A is formed, excellent adhesion can be obtained between the surface 140b and the microlens 162 as compared with the case where the surface 140b is flat.

As described above, the oscillation wavelength of the VCSEL element 159 is in the 940 nm band (about 940 nm ± 30 nm). This wavelength band is one of the wavelength bands absorbed by the atmosphere of the earth, and it is possible to configure a low noise system when applied to a distance measuring device or the like using laser light. Further, this wavelength band is also a wavelength band having a large absorption coefficient of the Yb: YAG solid-state laser, which enables highly efficient excitation of the Yb: YAG solid-state laser. Further, InGaAs used for the quantum well layer of the active layer 145 has a compression strain with respect to GaAs, and the VCSEL element 159 has a high differential gain. Therefore, the VCSEL chip 140 is capable of low threshold oscillation, and the light conversion efficiency of the VCSEL chip 140 is excellent. Further, since InGaAs does not contain chemically active Al, it is difficult for oxygen present in a trace amount in the reaction chamber during crystal growth to be incorporated into the active layer 145. Therefore, high reliability can be obtained.

[Manufacturing method of optical device 100]
Next, a method of manufacturing the optical device 100 will be described. 4A to 4J are cross-sectional views showing a method of manufacturing the optical device 100. 4A-4J show changes in cross section along line I-I in FIG.

First, as shown in FIG. 4A, the n-DBR143, the spacer layer 144, the active layer 145, and the spacer layer 146 are formed on the surface (first surface) 141a of the substrate 141 opposite to the surface 141b. It grows sequentially with p-DBR147. The p-DBR147 includes a selective oxide layer 151 (not shown) made of, for example, p-AlAs. The semiconductor laminated structure of n-DBR143, spacer layer 144, active layer 145, spacer layer 146 and p-DBR147 may be, for example, metal organic chemical vapor deposition (MOCVD) method or molecular beam epitaxial growth (Molecular Beam). It can be produced by crystal growth by the Epitaxy (MBE) method. Here, an example using the MOCVD method is shown. As an example, trimethylaluminum (TMA), trimethylgallium (TMG), trimethylindium (TMI) and the like are used as group III raw materials, and phosphine (PH ₃ ) and arsine (AsH ₃ ) are used as group V raw materials. As an example, carbon tetrabromide (CBr ₄ ) is used as the raw material for the p-type dopant, and hydrogen selenide (H ₂ Se) is used as the raw material for the n-type dopant. As the substrate 141, for example, an n-GaAs substrate whose surface is a mirror-polished surface can be used.

Next, a resist pattern (not shown) is formed on the p-DBR147 using a photolithography technique so as to correspond to the desired planar shape of the mesa 150. Then, for example, by an electron cyclotron resonance (ECR) etching method using Cl ₂ gas or the like, a part of the layer of the region not covered with the resist pattern of the semiconductor laminated structure is etched and shown in FIG. 4B. As such, the mesa 150 is formed. At this time, the mesa 150 is formed so that at least the selective oxide layer 151 (not shown) is exposed. After etching, the resist pattern is removed. Etching can be stopped, for example, within n-DBR143.

Next, as shown in FIG. 4C, the semiconductor laminated structure on which the mesa 150 is formed is used as an oxidation target, and heat treatment (oxidation treatment) is performed in steam. As a result, Al (aluminum) in the selective oxide layer 151 is selectively oxidized from the outer peripheral portion of the mesa 150. Then, an unoxidized non-oxidized region 151b surrounded by the oxidized region 151a of Al is left in the central portion of the mesa 150. As a result, an oxidative constriction structure is formed that limits the path of the drive current of the light emitting portion only to the central portion of the mesa 150. The non-oxidized region 151b is a current passing region (current injection region).

Next, as shown in FIG. 4D, an optically transparent insulating layer 153 is used, for example, by using a plasma CVD method so as to continuously cover the upper surface and side surfaces of the mesa 150 and the bottom surface of the groove between the mesas 150. To form. As the material of the insulating layer 153, for example, SiN, SiON, SiO _{2 and the} like can be used.

Next, as shown in FIG. 4E, using photolithography technology, the insulating layer 153 formed on a part of the upper surface of the mesa 150 (the portion excluding the outer peripheral portion of the upper surface of the p-DBR147) is removed to open the window. This is done to form the opening 154 (contact area). Then, the p-side electrode 155 is formed by forming a resist pattern, forming a metal film, and lifting off by a photolithography technique. In the formation of the metal film, for example, Ti, Pt and Au are sequentially laminated on the insulating layer 153 and the p-DBR147 exposed from the opening 154 by a vapor deposition method. A contact layer may be formed between the p-DBR 147 and the p-side electrode 155.

Next, as shown in FIG. 4F, using photolithography technology, the insulating layer 153 formed on a part of the bottom surface of the groove between the mesas 150 is removed to open the window, and the opening 156 (contact area) is opened. Form. Then, the n-side electrode 157 is formed by forming a resist pattern, forming a metal film, and lifting off by a photolithography technique. In the formation of the metal film, for example, AuGe, Ni and Au are sequentially laminated on the n-DBR143 exposed from the opening 156 by a vapor deposition method. A contact layer may be formed between the n-DBR 143 and the n-side electrode 157.

Next, the surface 141b of the substrate 141 is polished. For example, from the viewpoint of handleability, the thickness of the substrate 141 is preferably about 500 μm until the formation of the p-side electrode 155 and the formation of the n-side electrode 157. On the other hand, in the product of the optical device 100, the thickness of the substrate 141 is preferably about 200 μm from the viewpoint of light loss and the like. Therefore, the surface 141b of the substrate 141 is polished after the n-side electrode 157 is formed.

Next, the antireflection structure 163 (see FIGS. 3A and 3B) is formed on the surface 141b of the substrate 141. In the formation of the antireflection structure 163, for example, an electron beam lithography technique is used to form a fine groove 164A having a triangular cross section on the surface 141b.

In this way, the VCSEL chip 140 can be formed.

Next, as shown in FIG. 4G, the surface 140b is coated with a liquid energy curable resin 165 at room temperature. As the energy curable resin 165, a thermosetting resin, an ultraviolet curable resin, an electron beam curable resin and the like can be used. Specifically, an epoxy resin, an acrylic resin, or the like can be used.

Next, as shown in FIG. 4H, a mold 169 having an inverted shape of the MLA 160 is pressed against the energy curable resin 165. Then, heat, ultraviolet rays, electron beams, or the like are applied to the energy-curable resin 165, and the energy-curable resin 165 is cross-linked and cured to form an MLA 160 having a base portion 161 and a microlens 162.

Next, as shown in FIG. 4I, the mold 169 is removed. Then, the VCSEL chip 140 having the MLA 160 formed on the surface 140b is mounted on the mounting substrate 120.

In this way, the optical device 100 can be manufactured.

In this manufacturing method, the shape of the microlens 162 is determined by using the mold 169. As described above, for example, the lens diameter of the microlens 162 is 50 μm and the radius of curvature is 70 μm. A mold 169 for forming a microlens 162 of such a size can be easily prepared. Therefore, according to this method, it is possible to easily manufacture a microlens 162 having high accuracy in dimensions such as lens diameter.

When the substrate 141 itself is etched to form a microlens on the surface 141b of the substrate 141, it is processed into a spherical surface with a thickness of about 600 nm. It is extremely difficult to perform high-precision spherical etching in such a thin range.

When SiO ₂ is used as the material of the MLA 160, for example, silanol may be applied instead of the energy-curable resin 165 and solidified by a condensation reaction using a mold 169. Further, instead of applying the energy curable resin 165, a SiO ₂ film may be formed, and the SiO ₂ film may be processed by photolithography.

The form of the antireflection structure 163 is not particularly limited, and any form may be used as long as the average refractive index gradually changes from the incident side to the emitted side of the laser beam 149. 5A is a plan view showing another example of the antireflection structure, and FIG. 5B is a cross-sectional view showing another example of the antireflection structure shown in FIG. 5A. 6A is a plan view showing still another example of the antireflection structure, and FIGS. 6B and 6C are cross-sectional views showing still another example of the antireflection structure shown in FIG. 6A.

For example, as shown in FIGS. 5A and 5B, as the antireflection structure 163, for example, grooves 164B having a triangular cross section having a height of about 100 nm may be formed at a constant pitch of about 200 nm. The grooves 164B are formed concentrically. The center of the circle may be aligned with the optical axis of the light emitting region 148 and the microlens 162, or may be deviated from the optical axis of the light emitting region 148 and the microlens 162.

For example, as shown in FIGS. 6A, 6B and 6C, as the antireflection structure 163, for example, quadrangular pyramids 164C having a height of about 100 nm may be two-dimensionally arranged in the X direction and the Y direction. The size of the quadrangular pyramid 164C may be constant or irregular.

The antireflection structure 163 may be composed of an antireflection film, or may include an antireflection film. The antireflection film is, for example, a laminated film in which HfO ₂ / SiO ₂ is laminated in order from the substrate 141 side, and has a transmittance of 99% or more for light in a predetermined wavelength region including the oscillation wavelength of 940 nm of the VCSEL element 159. Designed to do. The antireflection film can be formed by a vacuum vapor deposition method, a sputtering method or the like.

The arrangement of the VCSEL element 159 and the microlens 162 is not limited, and may be a staggered arrangement (triangular lattice arrangement) shown in FIG. 2 or a square arrangement (square lattice arrangement) shown in FIG.

(Second Embodiment)
Next, the second embodiment will be described. The second embodiment differs from the first embodiment in the configuration of the MLA. FIG. 8 is a cross-sectional view showing the optical device according to the second embodiment. FIG. 8 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIG. 8, the optical device 200 according to the second embodiment has an MLA 260 including a microlens 162. Unlike the MLA160, the MLA260 does not have a base for connecting the microlens 162. Each microlens 162 is formed so that a desired beam can be formed on the radiation pattern of the VCSEL element 159. For example, the lens diameter is about 60 μm and the radius of curvature is about 40 μm. The height (sag amount) of the apex of the microlens 162 from the surface 140b is about 15 μm. Other configurations are the same as in the first embodiment.

The same effect as that of the optical device 100 can be obtained by the optical device 200.

Further, in the optical device 200, excellent heat resistance can be obtained. The coefficient of linear expansion differs by about 10 times between the substrate 141 and the resin used for MLA160. Therefore, even when no stress is generated between the substrate 141 and the MLA 160 at room temperature, the greater the difference in the temperature of the operating environment from the normal temperature, the greater the stress generated between the substrate 141 and the MLA 160. The larger the contact area between the substrate 141 and the MLA 160, the greater the force acting on the microlens 162. In the optical device 200, since the MLA 160 does not include a base and the microlenses 162 are formed independently of each other, the force acting on the individual microlenses 162 is smaller than the force in the optical device 100. Therefore, even if there is a temperature change, more stable operation can be realized. In particular, it is suitable for application to a sensing system used in a high temperature environment.

Next, a method of manufacturing the optical device 200 according to the second embodiment will be described. 9A-9B are cross-sectional views showing a method of manufacturing the optical device 200 according to the second embodiment.

In this manufacturing method, first, the VCSEL chip 140 is formed in the same manner as in the first embodiment.

Next, as shown in FIG. 9A, the energy-curable resin 165, which is liquid at room temperature, is individually arranged on the portion of the surface 140b where the microlens 162 is to be formed. The energy curable resin 165 can be formed by a method of directly ejecting the resin material, such as an inkjet method or a dispensing method. When a small amount of the liquid energy-curable resin 165 is discharged, the energy-curable resin 165 has a spherical lens shape due to surface tension.

Next, heat, ultraviolet rays, electron beams, or the like are applied to the energy-curable resin 165, and the energy-curable resin 165 is cross-linked and cured to form an MLA 260 provided with a microlens 162, as shown in FIG. 9B.

Then, in the same manner as in the first embodiment, the VCSEL chip 140 having the MLA 260 formed on the surface 140b is mounted on the mounting substrate 120.

In this way, the optical device 200 can be manufactured.

In this manufacturing method, the shape of the microlens 162 is determined by using the surface tension of the liquid energy-curable resin 165.

Further, as compared with the first embodiment, it is possible to reduce the occurrence of optical axis deviation (eccentricity error) between each light emitting region 148 and the microlens 162. In the first embodiment, if an misalignment occurs between the mold 169 and the substrate 141, an eccentric error may occur in the combination of all VCSEL elements 159 and the microlens 162. On the other hand, in the second embodiment, even if an eccentricity error occurs between one set of VCSEL elements 159 and the microlens 162, the influence is unlikely to affect the other set. Therefore, according to the second embodiment, it is easy to obtain higher light-collecting performance.

Further, in the first embodiment, the pressure from the mold 169 also acts on the VCSEL chip 140, but in the second embodiment, such pressure does not occur. Since the thickness of the VCSEL chip 140 is, for example, about 100 μm to 200 μm, it may be damaged by pressure, but according to the second embodiment, such damage can be suppressed.

Further, as the antireflection structure 163, the wettability of the energy curable resin 165 can be adjusted in the surface 141b by forming the sub-wavelength structure only in the portion where the microlens 162 is to be formed. By increasing the wettability of the portion where the microlens 162 is to be formed more than the surrounding area, it is possible to suppress the wet spread of the discharged energy-curable resin 165 and further improve the accuracy of the lens diameter of the microlens 162. ..

(Third Embodiment)
Next, a third embodiment will be described. The third embodiment differs from the second embodiment in the configuration of the substrate of the VCSEL chip. FIG. 10 is a cross-sectional view showing an optical device according to a third embodiment. FIG. 10 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIG. 10, in the optical device 300 according to the third embodiment, the convex portion 141c is formed on the portion of the surface 141b where the microlens 162 is formed, and the concave portion 141d is formed around the convex portion 141c. There is. That is, a step is formed between the portion overlapping the microlens 162 in a plan view and the surrounding portion. Other configurations are the same as in the second embodiment.

The same effect as that of the optical device 200 can be obtained by the optical device 300.

Further, according to the optical device 300, the accuracy of the lens diameter of the microlens 162 can be further improved. Prior to the formation of the microlens 162, the convex portion 141c and the concave portion 141d are formed on the surface 141b. The microlens 162 can be formed in the same manner as in the second embodiment. Since the wet pinning effect is exhibited between the convex portion 141c and the concave portion 141d, the liquid energy-curable resin 165 provided on the convex portion 141c is unlikely to wet and spread to the outside of the convex portion 141c. Therefore, the planar shape of the microlens 162 can be controlled with high accuracy by the planar shape of the convex portion 141c.

Further, when the amount of the energy-curable resin 165 per microlens 162 is increased as compared with the second embodiment, the curvature of the energy-curable resin 165 becomes large. Therefore, it is possible to obtain a microlens 162 having a large curvature, a strong refractive power, and a high focusing efficiency.

(Fourth Embodiment)
Next, a fourth embodiment will be described. The fourth embodiment differs from the second embodiment in the configuration of the substrate of the VCSEL chip. FIG. 11 is a cross-sectional view showing an optical device according to a fourth embodiment. FIG. 11 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIG. 11, in the optical device 400 according to the fourth embodiment, the concave portion 141e is formed in the portion of the surface 141b where the microlens 162 is formed, and the convex portion 141f is formed around the concave portion 141e. .. That is, a step is formed between the portion overlapping the microlens 162 in a plan view and the surrounding portion. Other configurations are the same as in the second embodiment.

The same effect as that of the optical device 200 can be obtained by the optical device 400.

Further, according to the optical device 400, the accuracy of the lens diameter of the microlens 162 can be further improved. Prior to the formation of the microlens 162, the concave portion 141e and the convex portion 141f are formed on the surface 141b. The microlens 162 can be formed in the same manner as in the second embodiment. Since the wet pinning effect is exhibited between the concave portion 141e and the convex portion 141f, the liquid energy-curable resin 165 provided in the concave portion 141e is unlikely to wet and spread to the outside of the concave portion 141e. Therefore, the planar shape of the microlens 162 can be controlled with high accuracy by the planar shape of the recess 141e.

Further, the optical device 400 can also obtain a microlens 162 having a high focusing efficiency as in the optical device 300.

(Fifth Embodiment)
Next, a fifth embodiment will be described. The fifth embodiment differs from the second embodiment in the configuration around the microlens. FIG. 12 is a cross-sectional view showing an optical device according to a fifth embodiment. FIG. 12 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIG. 12, the optical device 500 according to the fifth embodiment has a frame 501 surrounding the microlens 162 on the surface 141b. The material of the frame 501 is, for example, a photoresist. Other configurations are the same as in the second embodiment.

The same effect as that of the optical device 200 can be obtained by the optical device 500.

Further, according to the optical device 500, the accuracy of the lens diameter of the microlens 162 can be further improved. Prior to the formation of the microlens 162, the frame 501 is formed on the surface 141b. The frame 501 can be formed by, for example, a photolithography technique. The microlens 162 can be formed in the same manner as in the second embodiment. Since the frame 501 exerts a wet pinning effect, the liquid energy-curable resin 165 provided inside the frame 501 is unlikely to leak to the outside of the frame 501. Therefore, the planar shape of the microlens 162 can be controlled with high accuracy by the planar shape of the frame 501.

Further, the optical device 500 can also obtain a microlens 162 having a high focusing efficiency as in the optical device 300.

(Sixth Embodiment)
Next, the sixth embodiment will be described. The sixth embodiment differs from the second embodiment in the configuration around the microlens. FIG. 13 is a cross-sectional view showing an optical device according to a sixth embodiment. FIG. 13 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIG. 13, the optical device 600 according to the sixth embodiment has a first film 601 at a portion of the surface 141b where the microlens 162 is formed, and a second film 601 is surrounded by the first film 601. It has a film 602 of. The surface free energy of the first film 601 is higher than the surface free energy of the surface 140b, and the surface free energy of the second film 602 is lower than the surface free energy of the surface 140b. Therefore, due to the first film 601 and the second film 602, the surface free energy of the portion of the surface 140b (surface 141b) that overlaps the microlens 162 in a plan view is higher than the surface free energy of the surrounding portion. ing. Other configurations are the same as in the second embodiment.

The same effect as that of the optical device 200 can be obtained by the optical device 600.

Further, according to the optical device 600, the accuracy of the lens diameter of the microlens 162 can be further improved. Prior to the formation of the microlens 162, the first film 601 and the second film 602 are formed on the surface 141b. The microlens 162 can be formed in the same manner as in the second embodiment. The liquid energy-curable resin 165 provided on the first film 601 is unlikely to get wet and spread outside the first film 601. Therefore, the planar shape of the microlens 162 can be controlled with high accuracy by the planar shape of the first film 601 and the second film 602.

Further, due to the difference in surface free energy, the contact angle of the liquid energy-curable resin 165 on the surface 141b is larger on the second film 602 than on the first film 601. Therefore, when the amount of the energy-curable resin 165 per microlens 162 is increased as compared with the second embodiment, the curvature of the energy-curable resin 165 becomes large. Therefore, it is possible to obtain a microlens 162 having a large curvature, a strong refractive power, and a high focusing efficiency.

As shown in FIG. 14, the first film 601 may not be provided, and as shown in FIG. 15, the second film 602 may not be provided. FIG. 14 is a cross-sectional view showing an optical device 600A according to a first modification of the sixth embodiment. FIG. 15 is a cross-sectional view showing an optical device 600B according to a second modification of the sixth embodiment. 14 and 15 correspond to cross-sectional views taken along the line I-I in FIG.

(7th Embodiment)
Next, a seventh embodiment will be described. The seventh embodiment differs from the second embodiment in the configuration around the microlens. FIG. 16 is a plan view showing an optical device according to a seventh embodiment. FIG. 17 is a cross-sectional view showing an optical device according to a seventh embodiment. FIG. 17 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIGS. 16 and 17, the optical device 700 according to the seventh embodiment has an n-side electrode 701 around a portion of the surface 141b where the microlens 162 is formed. Further, the opening 156 is not formed in the insulating layer 153, and the n-side electrode 157 is not provided. As the n-side electrode 701, for example, a laminated film in which a gold germanium alloy (AuGe) / nickel (Ni) / gold (Au) is laminated in order from the n-DBR143 side can be used. Other configurations are the same as in the second embodiment.

The same effect as that of the optical device 200 can be obtained by the optical device 700.

Further, in the optical device 700, a voltage is applied to the VCSEL element 159 from the n-side electrode 701 and the p-side electrode 155. Therefore, the effect of miniaturization and improvement of layout can be obtained.

Further, when the material of the n-side electrode 701 has a light-shielding property with respect to the laser beam 149, it is possible to suppress the emission of stray light from the light emitting region 148.

As in the third embodiment, the recess 141d may be formed in the portion where the n-side electrode 701 is provided (see FIG. 10). As in the fourth embodiment, the convex portion 141f may be formed in the portion where the n-side electrode 701 is provided (see FIG. 11). As in the fifth embodiment, the frame 501 may be formed between the n-side electrode 701 and the microlens 162 (see FIG. 12). As in the sixth embodiment, the first film 601 may be formed on the portion of the surface 141b where the microlens 162 is formed, and the second film 602 may be formed on the n-side electrode 701 (FIG. 6). See 13). The first film 601 may not be provided as in the first modification of the sixth embodiment (see FIG. 14), and as in the second modification of the sixth embodiment, the second modification The film 602 of No. 2 may not be provided (see FIG. 15). Further, the arrangement of the VCSEL element 159 and the microlens 162 is not limited, and may be a staggered arrangement (triangular lattice arrangement) shown in FIG. 16 or a square arrangement (square lattice arrangement) (see FIG. 7).

(8th Embodiment)
Next, the eighth embodiment will be described. The eighth embodiment differs from the first embodiment in the configuration of the substrate of the VCSEL chip. FIG. 18 is a cross-sectional view showing an optical device according to an eighth embodiment. FIG. 18 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIG. 18, in the optical device 800 according to the eighth embodiment, the concave lens structure 141g is formed on the portion of the surface 141b where the microlens 162 is formed. In the first embodiment, the thickness of the substrate 141 is about 200 μm, whereas in the eighth embodiment, the thickness of the substrate 141 is about 100 μm. Further, the lens diameter of the microlens 162 is 40 μm, and the radius of curvature is 50 μm. The height (sag amount) of the apex of the microlens 162 from the flat surface around the concave lens structure 141g of the surface 140b is about 3 μm. Other configurations are the same as in the first embodiment.

The same effect as that of the optical device 100 can be obtained by the optical device 800.

Further, since the concave lens structure 141 g is formed, the laser beam 149 spreads in the microlens 162 as compared with the first embodiment, and the focusing efficiency by the microlens 162 can be improved. That is, according to the optical device 800, the radiation angle can be reduced.

In order to manufacture the optical device 800, the concave lens structure 141g is formed on the surface 141b before the antireflection structure 163 is formed, and the antireflection structure 163 is formed on the surface 141b including the concave lens structure 141g. A sub-wavelength structure may be formed as the antireflection structure 163, or an antireflection film may be formed. Then, as in the first embodiment, the treatment after the application of the energy curable resin 165, which is liquid at room temperature, is performed. A mold 169 for forming a microlens 162 having a lens diameter of 40 μm and a radius of curvature of 50 μm can also be easily prepared. Therefore, it is possible to easily manufacture a microlens 162 having high accuracy of dimensions such as lens diameter and high focusing efficiency.

(9th embodiment)
Next, a ninth embodiment will be described. The ninth embodiment differs from the second embodiment in the configuration of the substrate of the VCSEL chip. FIG. 19 is a cross-sectional view showing an optical device according to a ninth embodiment. FIG. 19 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIG. 19, in the optical device 900 according to the ninth embodiment, the concave lens structure 141g is formed on the portion of the surface 141b where the microlens 162 is formed, as in the eighth embodiment. Other configurations are the same as in the second embodiment.

According to the optical device 900, the same effect as that of the optical device 800 and the same effect as that of the optical device 200 can be obtained.

In order to manufacture the optical device 900, the concave lens structure 141g is formed on the surface 141b before the antireflection structure 163 is formed, and the antireflection structure 163 is formed on the surface 141b including the concave lens structure 141g. A sub-wavelength structure may be formed as the antireflection structure 163, or an antireflection film may be formed. Then, as in the second embodiment, the treatment after the discharge of the liquid energy curable resin 165 at room temperature is performed. In this manufacturing method, 141 g of the concave lens structure can exert a pinning effect of suppressing the wet spread of the energy-curable resin 165. Therefore, the accuracy of the lens diameter of the microlens 162 can be further improved.

(10th Embodiment)
Next, a tenth embodiment will be described. The tenth embodiment differs from the ninth embodiment in the configuration around the microlens. FIG. 20 is a cross-sectional view showing an optical device according to a tenth embodiment. FIG. 20 corresponds to a cross-sectional view taken along the line I-I in FIG.

As shown in FIG. 20, in the optical device 1000 according to the tenth embodiment, the concave lens structure 141g is formed on the portion of the surface 141b where the microlens 162 is formed, as in the ninth embodiment. Other configurations are the same as in the seventh embodiment.

According to the optical device 1000, the same effect as that of the optical device 900 and the same effect as that of the optical device 700 can be obtained.

In the ninth embodiment and the tenth embodiment, the frame 501 may be formed as in the fifth embodiment (see FIG. 12). As in the sixth embodiment, the first film 601 and the second film 602 may be formed (see FIG. 13). The first film 601 may not be provided as in the first modification of the sixth embodiment (see FIG. 14), and as in the second modification of the sixth embodiment, the second modification The film 602 of No. 2 may not be provided (see FIG. 15).

In the first to tenth embodiments, an antireflection film may be formed on the upper surface of the microlens 162.

(11th Embodiment)
Next, the eleventh embodiment will be described. The eleventh embodiment relates to a measuring device including an optical device according to any one of the first to tenth embodiments. FIG. 21 is a diagram showing a usage example of the measuring device according to the eleventh embodiment.

As shown in FIG. 21, the measuring device 11 according to the eleventh embodiment can be used, for example, for visual inspection of a component 2 in a factory or the like. As shown in FIG. 26, the measuring device 11 includes, for example, a lighting unit 10 including an optical device 14 including a VCSEL chip 140 according to any one of the first to tenth embodiments, and photoelectric conversion of an optical sensor or the like. It has a light receiving element 13 composed of an element. The illumination unit 10 has a projection unit 19 that projects the light emitted by the VCSEL element 159 through the microlens 162 onto the irradiated surface 3. The projection unit 19 is mounted by an optical system that spreads the light emitted from the optical device 14 and projects the light onto the irradiated surface 3.

As an example, the measuring device 11 projects (irradiates) pulsed light from the lighting unit 10 onto the component 2 (detection target) on the illuminated surface 3, and receives the reflected light from the component 2 as a light receiving element (optical sensor). It is a TOF (Time Of Flight) type distance detection device that receives light at 13 and measures the distance to the component 2 based on the time required for receiving the reflected light.

In the optical device 14 of the lighting unit 10, a current is sent by the light source drive circuit 16 to control light emission. The light source drive circuit 16 transmits a signal to the signal control circuit 17 when the optical device 14 emits light.

The reflected light projected from the optical device 14 and reflected by the component 2 is guided to the light receiving element 13 through the light receiving optical system 18 having a condensing action. The light received by the light receiving element 13 is photoelectrically converted and sent to the signal control circuit 17 as an electric signal. The signal control circuit 17 calculates the distance to the component 2 based on the time difference between the light projection (light emission signal input from the light source drive circuit 16) and the light reception (light reception signal input from the light receiving element 13). Therefore, in the measuring device 11, the light receiving element 13 functions as a detection unit that detects the light emitted from the optical device 14 and reflected by the component 2. Further, the signal control circuit 17 functions as a calculation unit that acquires information regarding the distance to the component 2 based on the signal from the light receiving element (detection unit) 13.

In the example of FIG. 21, since the depth information of the component 2 can be acquired by using the measuring device 11, it is easier to acquire information such as fine scratches, defects, and three-dimensional shapes as compared with the visual inspection by a normal camera. Further, since the measuring device 11 includes a lighting unit, it can be used even in a dark environment. Further, since the illumination unit includes the VCSEL chip 140, uniform illumination can be realized. Therefore, by using the lighting unit, the distance measurement accuracy does not deteriorate in the peripheral part of the optical sensor even if the light is irradiated to a wide angle, so that many parts 2 can be inspected at the same time, and the work efficiency is improved. You can expect it. The lighting unit is an example of a lighting device, and the optical sensor is an example of an imaging unit.

A parts inspection device provided with the measuring device 11 can be realized by providing an inspection unit for visually inspecting the object by the measuring device 11.

(12th Embodiment)
Next, a twelfth embodiment will be described. A twelfth embodiment relates to a robot including a measuring device according to the eleventh embodiment. FIG. 22 is a diagram showing a robot according to the twelfth embodiment.

As shown in FIG. 22, the robot 12 according to the twelfth embodiment is mounted in the immediate vicinity of the robot arm (articulated arm) 70 having articulated joints, the hand portion 71 for picking an object, and the hand portion 71. It also has a measuring device 11. The robot arm 70 includes a plurality of bendable movable portions, and changes the position and orientation of the hand portion 71 according to control.

The measuring device 11 is provided so that the projection direction of the light coincides with the direction in which the hand portion 71 faces, and measures the picking object 15 of the hand portion 71 as a measurement target. At the time of this measurement, the measuring device 11 irradiates the irradiation region 60 with a laser beam from the built-in optical device.

More specifically, the measuring device 11 receives the reflected light from the irradiation region including the object 15 by the light receiving element 13, and the signal control circuit 17 generates image data (imaging), and the obtained image is obtained. Based on the information, various information about the object 15 is determined. Specifically, the information detected by the measuring device 11 includes the distance to the object 15, the shape of the object 15, the position of the object 15, and the mutual positional relationship when a plurality of objects 15 exist. And so on. Then, based on the determination result of the signal control circuit 17, the movements of the robot arm 70 and the hand unit 71 are controlled to grip and move the object 15.

As described above, in the twelfth embodiment, by mounting the measuring device 11 on the robot arm 70, the picking object 15 can be measured from a short distance, which is compared with the measurement from a distance using a camera or the like. Therefore, improvement of measurement accuracy and recognition accuracy can be achieved. For example, in the field of factory automation (FA) in various assembly lines of factories, a robot 12 including a robot arm 70 is used for inspection and recognition of a part which is an object 15. By mounting the measuring device 11 on the robot 12, it becomes possible to accurately inspect and recognize parts.

The optical device according to any one of the first to tenth embodiments may be mounted in the immediate vicinity of the hand unit 71, not inside the measuring device 11, but independently of the measuring device 11.

(13th Embodiment)
Next, the thirteenth embodiment will be described. The thirteenth embodiment relates to an electronic device equipped with the measuring device according to the eleventh embodiment. FIG. 23 is a diagram showing an electronic device according to a thirteenth embodiment.

The electronic device according to the thirteenth embodiment is, for example, a smartphone 80. The smartphone 80 is equipped with a measuring device 11 and a user authentication function. The user authentication function is installed, for example, by providing dedicated hardware. In addition, the central processing unit (CPU) of the computer configuration may execute a program stored in a read-only memory (ROM) or the like to realize the authentication function. The measuring device 11 measures the shape of the face, ears, head, and the like of the user 81. Based on this measurement result, the user authentication function determines whether or not the user 81 is a person registered in the smartphone 80.

When authenticating the user, light is projected from the lighting unit 10 of the measuring device 11 mounted on the smartphone 80 toward the user 81 who uses the smartphone 80. The light reflected by the user 81 and its surroundings is received by the light receiving element 13 of the measuring device 11, and the signal control circuit 17 functioning as an image processing unit generates image data (imaging). The signal control circuit 17 determines the degree of agreement between the image information of the user 81 and the user information registered in advance, and determines whether or not the user is a registered user. Specifically, the shapes (contours and irregularities) of the face, ears, head, etc. of the user 81 can be measured and used as user information.

As described above, in the thirteenth embodiment, by mounting the measuring device 11 on the smartphone 80, it is possible to measure the shape of the face, ears, head, etc. of the user 81 with high accuracy, and the recognition accuracy is improved. Can be achieved. In the present embodiment, the measuring device 11 is mounted on the smartphone 80, but it may be mounted on an electronic device such as a personal computer (PC) or a printer. Further, the functional aspect is not limited to the personal authentication function, and may be used for a face-shaped scanner or the like.

The optical device according to any one of the first to tenth embodiments may be mounted on an electronic device such as a smartphone 80 independently of the measuring device 11 instead of inside the measuring device 11.

(14th Embodiment)
Next, the fourteenth embodiment will be described. The fourteenth embodiment relates to a moving body such as a vehicle equipped with the measuring device according to the eleventh embodiment. FIG. 24 is a diagram showing a moving body according to the fourteenth embodiment.

As shown in FIG. 24, the moving body according to the fourteenth embodiment is, for example, an automobile. The inside 85 of the automobile is equipped with a measuring device 11 and a driving support function. The driving support function is installed, for example, by providing dedicated hardware. In addition, the CPU of the computer configuration may realize the driving support function by executing a program stored in the ROM or the like. The measuring device 11 measures the face, posture, and the like of the driver 86. Based on this measurement result, the driving support function provides appropriate support according to the situation of the driver 86.

Light is projected from the lighting unit 10 of the measuring device 11 mounted on the vehicle interior 85 of the vehicle toward the driver 86 who drives the vehicle. The light reflected by the driver 86 and its surroundings is received by the light receiving element 13 of the measuring device 11, and the signal control circuit 17 generates image data (imaging). The signal control circuit 17 determines information such as the face (facial expression) and posture of the driver 86 based on the image information of the driver 86. Then, based on the determination result of the signal control circuit 17, the brakes and the steering wheels are controlled to provide appropriate driving support according to the situation of the driver 86. For example, it is possible to perform control such as automatic deceleration and automatic stop when inattentive driving or dozing driving is detected.

As described above, in the fourteenth embodiment, by mounting the measuring device 11 in the automobile, the face, posture, etc. of the driver 86 can be measured with high accuracy, and the state recognition accuracy of the driver 86 in the vehicle 85 is improved. Can be achieved. In the present embodiment, the measuring device 11 is mounted on the automobile, but it may be mounted on the inside of a train, the driver's seat (or the passenger seat) of an airplane, or the like. Further, as a functional aspect, it may be used not only for recognizing the state of the driver 86 such as the face and posture of the driver 86, but also for recognizing the state of passengers other than the driver 86 and the inside of the vehicle 85. Further, the driver 86 may be personally authenticated and used for vehicle security such as determining whether or not the driver is a person registered in advance as a driver of the vehicle.

The optical device according to any one of the first to tenth embodiments may be mounted in the vehicle interior 85 independently of the measuring device 11 instead of inside the measuring device 11.

(15th Embodiment)
Next, a fifteenth embodiment will be described. The fifteenth embodiment relates to a moving body equipped with the measuring device according to the eleventh embodiment. FIG. 25 is a diagram showing a moving body according to the fifteenth embodiment.

As shown in FIG. 25, the moving body 87 according to the fifteenth embodiment is, for example, an autonomous moving body. A measuring device 11 is mounted on the moving body 87, and measures the circumference of the moving body 87. Based on this measurement result, the moving body 87 determines the path of its own movement and calculates the layout of the room 89 such as the position of the desk 88.

The measuring device 11 mounted on the moving body 87 irradiates light toward the traveling direction of the moving body 87 and the peripheral region thereof. In the room 89, which is the moving area of the moving body 87, the desk 88 is installed in the traveling direction of the moving body 87. Of the light projected from the lighting unit 10 of the measuring device 11 mounted on the moving body 87, the light reflected by the desk 88 and its surroundings is received by the light receiving element 13 of the measuring device 11, and the photoelectrically converted electric signal is generated. It is sent to the signal control circuit 17.

The signal control circuit 17 calculates information on the layout of the room 89, such as the distance to the desk 88, the position of the desk 88, and the surrounding conditions other than the desk 88, based on the electric signal sent from the light receiving element 13. Based on this calculated information, the signal control circuit 17 determines the movement path, movement speed, etc. of the moving body 87, and based on the judgment result, the moving body 87 travels (operation of the motor as a drive source, etc.). To control.

As described above, in the fifteenth embodiment, by mounting the measuring device 11 on the moving body 87, the periphery of the moving body 87 can be measured with high accuracy, and the operation of the moving body 87 can be supported. In the present embodiment, the measuring device 11 is mounted on the small moving body 87, but it may be mounted on an automobile or the like. Further, it may be used not only indoors but also outdoors, and may be used for measurement of buildings and the like.

The optical device according to any one of the first to tenth embodiments may be mounted on the moving body 87 independently of the measuring device 11 instead of inside the measuring device 11.

Although the preferred embodiments and the like have been described in detail above, the embodiments are not limited to the above-described embodiments and the like, and various embodiments and the like described above are used without departing from the scope of the claims. Modifications and substitutions can be added.

3 Irradiated surface 11 Measuring device 12 Robot 60 Irradiated area 70 Robot arm 80 Smartphone 87 Moving object 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000 Optical device 120 Mounting board 140 VCSEL chip 141 Board 141a , 141b Surface 141c, 141f Convex 141d, 141e Concave 141g Concave lens structure 163 Anti-reflection structure 164A, 164B Groove 164C Square pyramid 165 Energy curable resin 169 type 601 First film 602 Second film

Japanese Unexamined Patent Publication No. 5-55703

Claims (15)

A plurality of surface emitting laser elements provided on the first surface of the substrate and emitting light in a direction intersecting the first surface, and
A plurality of optical elements arranged corresponding to the surface emitting laser element on a second surface of the substrate opposite to the first surface, and
An antireflection structure between the substrate and the plurality of optical elements,
An optical device characterized by having. The optical device according to claim 1, wherein the antireflection structure has a sub-wavelength structure. The optical device according to claim 1 or 2, wherein the plurality of optical elements are separated from each other in a plan view. The optical device according to any one of claims 1 to 3, wherein the plurality of optical elements include a resin material. The invention according to any one of claims 1 to 4, wherein a step is formed between a portion of the second surface that overlaps the plurality of optical elements in a plan view and a portion surrounding the optical element. Optical device. Any of claims 1 to 5, wherein the second surface has a film having a film in which the surface free energy of a portion overlapping the plurality of optical elements in a plan view is higher than the surface free energy of a portion around the second surface. The optical device according to item 1. The optical device according to any one of claims 1 to 6, further comprising a light-shielding member that covers a portion of the second surface around a portion that overlaps the plurality of optical elements in a plan view. The optical device according to any one of claims 1 to 7, further comprising a conductive member that covers a portion of the second surface that covers a portion that overlaps the plurality of optical elements in a plan view. The optical device according to any one of claims 1 to 8, wherein a concave lens is formed on a portion of the second surface that overlaps with the plurality of optical elements in a plan view. The optical device according to any one of claims 1 to 9,
A projection unit that projects the light emitted by the plurality of surface emitting laser elements through the plurality of optical elements onto the irradiated surface.
A lighting device characterized by having. The lighting device according to claim 10 and
An imaging unit that captures the light projected on the irradiated surface,
A measuring means for measuring an object on the irradiated surface based on the image information of the light imaged by the imaging unit, and a measuring means.
A measuring device characterized by having. The measuring device according to claim 11 and
An inspection unit that inspects the appearance of an object using the measuring device,
A parts inspection device characterized by having. The measuring device according to claim 11 and
An articulated arm equipped with the measuring device and
A robot characterized by having. The measuring device according to claim 11 and
An authentication unit that authenticates the user based on the measurement result of the user by the measuring device,
An electronic device characterized by having. The measuring device according to claim 11 and
A driving support unit that supports the driving of a moving body based on the measurement results of the measuring device,
A moving body characterized by having.

Images