WO2024024369A1

WO2024024369A1 - Light-emitting device and manufacturing method therefor

Info

Publication number: WO2024024369A1
Application number: PCT/JP2023/023708
Authority: WO
Inventors: 章吾小野
Original assignee: ソニーセミコンダクタソリューションズ株式会社
Priority date: 2022-07-26
Filing date: 2023-06-27
Publication date: 2024-02-01
Also published as: JP2024016744A

Abstract

[Problem] To provide: a light-emitting device configured such that a substrate that has been singulated can be suitably protected; and a manufacturing method for the same. [Solution] A light-emitting device according to this present disclosure comprises: a substrate; a light-emitting element provided to a first surface of the substrate; a lens provided to a second surface of the substrate; and a film provided to a third surface, which is located between the first surface and the second surface of the substrate.

Description

Light emitting device and its manufacturing method

The present disclosure relates to a light emitting device and a method for manufacturing the same.

A surface emitting laser such as a VCSEL (Vertical Cavity Surface Emitting Laser) is known as a type of semiconductor laser. Generally, in a light emitting device using a surface emitting laser, a plurality of light emitting elements are provided in a two-dimensional array on the front or back surface of a substrate.

Special Publication No. 2004-526194

When the above-mentioned substrates are diced, problems arise such as deposits adhering to the side surfaces of the diced substrates and oxides being generated on the sides of the diced substrates. Deposits are generated, for example, due to dry etching during singulation of the substrate. On the other hand, oxides are produced, for example, when the side surfaces of the substrate are oxidized. When these deposits and oxides fall off the sides of the substrate, they cause dust.

Therefore, the present disclosure provides a light emitting device and a method for manufacturing the same, which can suitably protect the substrate after being singulated.

A light emitting device according to a first aspect of the present disclosure includes a substrate, a light emitting element provided on a first surface of the substrate, a lens provided on a second surface of the substrate, and a light emitting device provided on the first surface of the substrate. and a film provided on a third surface between the second surface and the second surface. Thereby, for example, by forming a film on the third surface of the substrate, it becomes possible to suitably protect the substrate after being singulated.

Moreover, in this first side, the film may be provided on the second surface and the third surface of the substrate. Thereby, for example, by forming a film spanning the second and third surfaces of the substrate, it becomes possible to suitably protect the substrate after it has been separated into pieces.

Furthermore, in this first aspect, the film may cover the lens. Thereby, for example, it becomes possible to suitably protect the substrates after being singulated by the lens film.

Furthermore, in this first side, the film does not need to be in contact with the light emitting element. Thereby, for example, it becomes possible to suitably protect the substrate after being singulated by a film that is not used for a light emitting element.

Furthermore, in this first aspect, the film may be an antireflection film. This makes it possible, for example, to suitably protect the substrate after it has been separated into pieces with an antireflection film.

Furthermore, in this first aspect, the film may contain silicon. As a result, for example, it becomes possible to suitably protect the substrates after being singulated using a silicon-based film that can be formed at low cost.

Further, in this first side, the film includes a first film provided on the third surface of the substrate, and a second film provided on the third surface of the substrate via the first film. It may also include. Thereby, for example, it becomes possible to suitably protect the substrates after being singulated by a film that can be used as an antireflection film or the like.

Furthermore, in this first aspect, the first film may contain silicon and nitrogen, and the second film may contain silicon and oxygen. Thereby, for example, it becomes possible to suitably protect the substrates after being singulated by a film that can be used as an antireflection film or the like.

Furthermore, in this first aspect, the substrate may be a compound semiconductor substrate. Thereby, for example, even when using a compound semiconductor substrate that has problems of being brittle or easily oxidized, it is possible to suitably protect the substrate after being singulated.

Furthermore, in this first aspect, the substrate may contain gallium and arsenic. Thereby, for example, even when using a compound semiconductor substrate such as a GaAs (gallium arsenide) substrate, it is possible to suitably protect the substrate after being singulated.

Furthermore, in this first side, the third surface of the substrate may have a tapered shape. As a result, even when the substrate is separated into pieces by dry etching or the like, for example, it becomes possible to suitably protect the substrate after the separation.

A method for manufacturing a light emitting device according to a second aspect of the present disclosure includes forming a light emitting element on a first surface of a substrate, forming a lens on a second surface of the substrate, dividing the substrate into pieces, and dividing the substrate into pieces. The method includes forming a film on a third surface between the first surface and the second surface of the substrate after chipping. Thereby, for example, by forming a film on the third surface of the substrate, it becomes possible to suitably protect the substrate after being singulated.

Furthermore, in this second aspect, the film may be formed on the second surface and the third surface of the substrate after the substrate is diced. Thereby, for example, by forming a film spanning the second and third surfaces of the substrate, it becomes possible to suitably protect the substrate after it has been separated into pieces.

Furthermore, in this second aspect, the film may be formed to cover the lens. Thereby, for example, it becomes possible to suitably protect the substrates after being singulated by the lens film.

Moreover, in this second side, the film may be formed so as not to be in contact with the light emitting element. Thereby, for example, it becomes possible to suitably protect the substrate after being singulated by a film that is not used for a light emitting element.

Furthermore, in this second aspect, the film may be an antireflection film. This makes it possible, for example, to suitably protect the substrate after it has been separated into pieces with an antireflection film.

Further, in this second aspect, the film includes a first film formed on the third surface of the substrate, and a second film formed on the third surface of the substrate via the first film. It may be formed to include. Thereby, for example, it becomes possible to suitably protect the substrates after being singulated by a film that can be used as an antireflection film or the like.

Furthermore, in this second aspect, the substrate may be a compound semiconductor substrate. Thereby, for example, even when using a compound semiconductor substrate that has problems of being brittle or easily oxidized, it is possible to suitably protect the substrate after being singulated.

Furthermore, in this second side, the third surface of the substrate may be formed by dividing the substrate into pieces. Thereby, for example, by protecting the third surface generated by singulation with a film, it becomes possible to suitably protect the substrate after singulation.

Furthermore, in this second aspect, the substrate may be separated into pieces by dry etching. Thereby, for example, even if deposits are generated due to dry etching, it is possible to suitably protect the substrate after being singulated.

1 is a block diagram showing a configuration example of a distance measuring device according to a first embodiment; FIG. FIG. 2 is a diagram for explaining the STL (Structured Light) method of the first embodiment. 1 is a cross-sectional view showing an example of the structure of a light emitting device according to a first embodiment. FIG. 4 is a cross-sectional view showing the structure of the light emitting device shown in FIG. 3B. FIG. 1 is a cross-sectional view and a plan view showing the structure of a light emitting device according to a first embodiment. FIG. 1 is a plan view and a cross-sectional view showing the structure of a substrate of a light emitting device according to a first embodiment. FIG. 3 is a cross-sectional view (1/3) showing a method for manufacturing a light emitting device of a comparative example. FIG. 3 is a cross-sectional view (2/3) showing a method for manufacturing a light emitting device of a comparative example. FIG. 3 is a cross-sectional view (3/3) showing a method for manufacturing a light emitting device of a comparative example. FIG. 3 is a cross-sectional view (1/3) showing the method for manufacturing the light emitting device of the first embodiment. FIG. 2 is a cross-sectional view (2/3) showing the method for manufacturing the light emitting device of the first embodiment. FIG. 3 is a cross-sectional view (3/3) showing the method for manufacturing the light emitting device of the first embodiment. FIG. 3 is a cross-sectional view for comparing the first embodiment and a comparative example. FIG. 2 is a cross-sectional view (1/2) showing the method for manufacturing the light emitting device of the first embodiment. FIG. 2 is a cross-sectional view (2/2) showing the method for manufacturing the light emitting device of the first embodiment. FIG. 3 is a cross-sectional view showing details of the method for manufacturing the light emitting device of the first embodiment. FIG. 2 is a cross-sectional view showing a structure of a light emitting device according to a first embodiment and a structure of a light emitting device according to a modification of the first embodiment. FIG. 7 is a cross-sectional view showing the structure of a light emitting device according to another modification of the first embodiment. FIG. 7 is a cross-sectional view showing an example of the structure of a substrate of a light emitting device according to a second embodiment. FIG. 7 is a cross-sectional view showing an example of the structure of a substrate of a light emitting device according to a third embodiment.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings.

(First embodiment)
(1) Distance measuring device 1 of the first embodiment
(1.1) Configuration of distance measuring device 1 FIG. 1 is a block diagram showing an example of the configuration of distance measuring device 1 according to the first embodiment.

As shown in the figure, the distance measuring device 1 includes a light emitting section 2, a driving section 3, a power supply circuit 4, a light emitting side optical system 5, a light receiving side optical system 6, a light receiving section 7, a signal processing section 8, a control section 9, and a temperature detection section. 10.

The light emitting unit 2 emits light using a plurality of light sources. The light emitting unit 2 of this example has light emitting elements 2a using VCSEL (Vertical Cavity Surface Emitting LASER) as each light source, and these light emitting elements 2a are arranged in a predetermined manner, such as in a matrix. has been configured.

The driving section 3 is configured to include a power supply circuit for driving the light emitting section 2.

The power supply circuit 4 generates a power supply voltage for the drive unit 3 based on an input voltage from, for example, a battery (not shown) provided in the distance measuring device 1. The drive section 3 drives the light emitting section 2 based on the power supply voltage.

The light emitted from the light emitting unit 2 is irradiated onto the subject S as a distance measurement target via the light emitting optical system 5. Then, the reflected light from the subject S of the light irradiated in this way enters the light receiving surface of the light receiving section 7 via the light receiving side optical system 6.

The light receiving unit 7 is, for example, a light receiving element such as a CCD (Charge Coupled Device) sensor or a CMOS (Complementary Metal Oxide Semiconductor) sensor, and receives reflected light from the subject S that enters through the light receiving side optical system 6 as described above. It receives light, converts it into an electrical signal, and outputs it.

The light receiving unit 7 performs, for example, CDS (Correlated Double Sampling) processing, AGC (Automatic Gain Control) processing, etc. on the electrical signal obtained by photoelectrically converting the received light, and further performs A/D (Analog/Digital) conversion. Perform processing. Then, the signal as digital data is output to the signal processing section 8 at the subsequent stage.

Additionally, the light receiving section 7 of this example outputs a frame synchronization signal Fs to the driving section 3. This allows the driving section 3 to cause the light emitting element 2a in the light emitting section 2 to emit light at a timing corresponding to the frame period of the light receiving section 7.

The signal processing unit 8 is configured as a signal processing processor using, for example, a DSP (Digital Signal Processor). The signal processing unit 8 performs various signal processing on the digital signal input from the light receiving unit 7.

The control unit 9 includes, for example, a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), etc., or an information processing device such as a DSP, and controls the light emission by the light emitting unit 2. It controls the driving section 3 for controlling the operation and controls the light receiving operation of the light receiving section 7.

The control section 9 has a function as a distance measuring section 9a. The distance measuring section 9a measures the distance to the subject S based on a signal input via the signal processing section 8 (that is, a signal obtained by receiving reflected light from the subject S). The distance measuring section 9a of this example measures distances for each part of the subject S in order to enable specification of the three-dimensional shape of the subject S.

Here, the specific distance measuring method in the distance measuring device 1 will be explained again later.

The temperature detection section 10 detects the temperature of the light emitting section 2. The temperature detection section 10 may be configured to detect temperature using, for example, a diode.

In this example, information on the temperature detected by the temperature detection section 10 is supplied to the driving section 3, which enables the driving section 3 to drive the light emitting section 2 based on the temperature information.

(1.2) Regarding the distance measurement method As the distance measurement method in the distance measurement device 1, for example, a distance measurement method using the STL (Structured Light) method or the ToF (Time of Flight) method is adopted. be able to.

The STL method is a method for measuring distance based on an image of a subject S irradiated with light having a predetermined bright/dark pattern, such as a dot pattern or a grid pattern.

FIG. 2 is a diagram for explaining the STL method of the first embodiment.

In the STL method, the subject S is irradiated with patterned light Lp having a dot pattern as shown in A in FIG. 2, for example. The patterned light Lp is divided into a plurality of blocks BL, and each block BL is assigned a different dot pattern (dot patterns are prevented from overlapping between blocks B).

FIG. 2B is an explanatory diagram of the distance measurement principle of the STL method.

In this example, a wall W and a box BX placed in front of the wall W are the subject S, and the subject S is irradiated with the pattern light Lp. “G” in the figure schematically represents the angle of view by the light receiving unit 7.

Further, "BLn" in the figure means the light of a certain block BL in the pattern light Lp, and "dn" means the dot pattern of the block BLn projected on the light reception image by the light receiving unit 7.

Here, if the box BX in front of the wall W does not exist, the dot pattern of the block BLn is projected at the position "dn'" in the figure in the received light image. That is, the position where the pattern of the block BLn is projected in the received light image is different depending on whether the box BX exists or the box BX does not exist, and specifically, distortion of the pattern occurs.

The STL method is a method for determining the shape and depth of the subject S by utilizing the fact that the irradiated pattern is distorted by the object shape of the subject S. Specifically, this method calculates the shape and depth of the subject S from the way the pattern is distorted.

When adopting the STL method, the light receiving section 7 is, for example, an IR (Infrared) light receiving section using a global shutter method. In the case of the STL method, the distance measuring section 9a controls the driving section 3 so that the light emitting section 2 emits pattern light, and detects pattern distortion in the image signal obtained via the signal processing section 8. , calculate the distance based on how the pattern is distorted.

Next, the ToF method measures the distance to the target object by detecting the flight time (time difference) of the light emitted from the light emitting unit 2 until it is reflected by the target object and reaches the light receiving unit 7. This is a method to do so.

When a so-called direct ToF (dToF) method is adopted as the ToF method, a SPAD (Single Photon Avalanche Diode) is used as the light receiving section 7, and the light emitting section 2 is pulse-driven. In this case, the distance measuring section 9a calculates the time difference between light emission and light reception for the light emitted from the light emitting section 2 and received by the light receiving section 7 based on the signal inputted via the signal processing section 8, and calculates the time difference between light emission and light reception. The distance to each part of the subject S is calculated based on the distance and the speed of light.

Note that when a so-called indirect ToF (iToF) method (phase difference method) is adopted as the ToF method, a light receiving portion capable of receiving IR light is used as the light receiving portion 7, for example.

(2) Light emitting device 1a of the first embodiment
FIG. 3 is a cross-sectional view showing an example of the structure of the light emitting device 1a of the first embodiment. The light emitting device 1a of this embodiment may be a part of the distance measuring device 1, or may be the distance measuring device 1 itself.

FIG. 3A shows a first example of the structure of the light emitting device 1a of this embodiment. The light emitting device 1a of this example includes an LD (Laser Diode) chip 11 including the above-mentioned light emitting section 2, an LDD (Laser Diode Driver) board 12 including the above-mentioned drive section 3, a mounting board 13, and a heat dissipation board 14. , a correction lens holder 15, one or more correction lenses 16, and wiring 17. The LD chip 11 is also called a VCSEL board.

A in FIG. 3 shows X, Y, and Z axes that are perpendicular to each other. The X direction and the Y direction correspond to the horizontal direction (horizontal direction), and the Z direction corresponds to the vertical direction (vertical direction). Further, the +Z direction corresponds to the upward direction, and the -Z direction corresponds to the downward direction. The -Z direction may or may not strictly match the direction of gravity.

The LD chip 11 is placed on the mounting board 13 via the heat dissipation board 14, and the LDD board 12 is also placed on the mounting board 13. The mounting board 13 is, for example, a printed circuit board. The mounting board 13 may further include the above-described light receiving section 7 and signal processing section 8. The heat dissipation substrate 14 is, for example, a ceramic substrate such as an Al ₂ O ₃ (aluminum oxide) substrate or an AlN (aluminum nitride substrate).

The correction lens holding section 15 is arranged on the heat dissipation substrate 14 so as to surround the LD chip 11, and holds one or more correction lenses 16 above the LD chip 11. These correction lenses 16 are included in the above-mentioned light emitting side optical system 5. The light emitted from the light emitting section 2 in the LD chip 11 is corrected by these correction lenses 16 and then irradiated onto the subject S described above. A in FIG. 3 shows two correction lenses 16 held by the correction lens holding section 15 as an example.

The wiring 17 is provided on the front surface, back surface, inside, etc. of the mounting board 13, and electrically connects the LD chip 11 and the LDD board 12. The wiring 17 is, for example, a printed wiring provided on the front or back surface of the mounting board 13 or a via wiring that penetrates the mounting board 13. The wiring 17 of this embodiment further passes inside or near the heat dissipation board 14.

FIG. 3B shows a second example of the structure of the light emitting device 1a of this embodiment. The light emitting device 1a of this example includes the same components as the light emitting device 1a of the first example, but includes bumps 18 instead of the wiring 17.

In FIG. 3B, the LDD board 12 is placed on the heat dissipation board 14, and the LD chip 11 is placed on the LDD board 12. By arranging the LD chip 11 on the LDD substrate 12 in this manner, it is possible to reduce the size of the mounting substrate 13 compared to the case of the first example. In FIG. 3B, the LD chip 11 is placed on the LDD substrate 12 via bumps 18, and is electrically connected to the LDD substrate 12 by the bumps 18. The bumps 18 are made of metal such as gold (Au), for example.

Hereinafter, the light emitting device 1a of this embodiment will be described as having the structure of the second example shown in FIG. 3B. However, the following description is also applicable to the light emitting device 1a having the structure of the first example, except for the description of the structure specific to the second example.

FIG. 4 is a cross-sectional view showing the structure of the light emitting device 1a shown in FIG. 3B.

FIG. 4 shows a cross section of the LD chip 11 and the LDD substrate 12 in the light emitting device 1a. As shown in FIG. 4, the LD chip 11 includes a substrate 21, a laminated film 22, a plurality of light emitting elements 23, a plurality of anode electrodes 24, and a cathode electrode 25. 31 and a plurality of connection pads 32. The light emitting element 23 shown in FIG. 4 is a specific example of the above-mentioned light emitting element 2a. Note that in FIG. 4, illustrations of a lens 41 and an antireflection film 42, which will be described later, are omitted (see FIG. 5).

The substrate 21 is, for example, a compound semiconductor substrate such as a GaAs (gallium arsenide) substrate. FIG. 4 shows a front surface S1 of the substrate 21 facing the −Z direction and a back surface S2 of the substrate 21 facing the +Z direction. The front surface S1 and the back surface S2 shown in FIG. 4 are perpendicular to the Z direction. In FIG. 4, the front surface S1 is the bottom surface of the substrate 21, and the back surface S2 is the top surface of the substrate 21. The front surface S1 and the back surface S2 of the substrate 21 are examples of the first surface and the second surface of the substrate of the present disclosure, respectively.

The laminated film 22 includes a plurality of layers laminated on the surface S1 of the substrate 21. Examples of these layers are an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a light-reflecting layer or an insulating layer with a light exit window. The laminated film 22 includes a plurality of post portions P protruding in the −Z direction. A portion of these post portions P serves as a plurality of light emitting elements 23.

The light emitting element 23 is provided on the surface S1 of the substrate 21 as part of the laminated film 22. The light emitting element 23 of this embodiment has a VCSEL structure and emits light in the +Z direction. As shown in FIG. 4, the light emitted from the light emitting element 23 passes through the substrate 21 from the front surface S1 to the back surface S2, and enters the correction lens 16 from the substrate 21. In this way, the LD chip 11 of this embodiment is a back-emission type VCSEL chip. The light emitting element 23 is also called a mesa portion.

Each anode electrode 24 is formed on the lower surface of the corresponding light emitting element 23. The cathode electrode 25 is continuously formed on the lower surface and side surface of the post portion P other than the light emitting element 23, and on the lower surface of the laminated film 22 between the post portions P. Therefore, the LD chip 11 of this embodiment includes a plurality of anode electrodes 24 and one cathode electrode 25. Each light emitting element 23 emits light when a current flows between the corresponding anode electrode 24 and the corresponding cathode electrode 25.

As described above, the LD chip 11 is placed on the LDD substrate 12 via the bumps 18, and is electrically connected to the LDD substrate 12 by the bumps 18. Specifically, a connection pad 32 is formed on a substrate 31 included in the LDD substrate 12, and a post portion P is arranged on the connection pad 32 via a bump 18. Each post portion P is arranged on the bump 18 via an anode electrode 24 or a cathode electrode 25. The substrate 31 is, for example, a semiconductor substrate such as a Si (silicon) substrate. The connection pad 32 is made of metal such as copper (Cu), for example.

As described above, the LDD board 12 includes the drive section 3 that drives the light emitting section 2 within the LD chip 11. FIG. 4 schematically shows a plurality of switches SW in the drive unit 3. Each switch SW is electrically connected to a corresponding light emitting element 23 via a bump 18. The drive unit 3 of this embodiment can control (turn on and off) these switches SW individually. Therefore, the drive unit 3 can drive the plurality of light emitting elements 23 individually. Thereby, it becomes possible to precisely control the light emitted from the light emitting section 2, for example, by causing only the light emitting elements 23 necessary for distance measurement to emit light. Such individual control of the light emitting elements 23 is made possible by arranging the LDD substrate 12 below the LD chip 11, which makes it easier to electrically connect each light emitting element 23 to the corresponding switch SW. ing.

FIG. 5 is a cross-sectional view and a plan view showing the structure of the light emitting device 1a of the first embodiment.

Similarly to FIG. 4, A in FIG. 5 shows a cross section of the LD chip 11 and the LDD substrate 12 in the light emitting device 1a. As shown in FIG. 5A, the LD chip 11 includes a substrate 21, a laminated film 22, a plurality of light emitting elements 23, a plurality of anode electrodes 24, and a cathode electrode 25. , a substrate 31, and a plurality of connection pads 32. However, in FIG. 5A, illustration of the anode electrode 24, cathode electrode 25, and connection pad 32 is omitted.

In FIG. 5A, the substrate 21 has a front surface S1 facing the -Z direction, a back surface S2 facing the +Z direction, and a plurality of side surfaces S3 between the front surface S1 and the back surface S2. . Although these side surfaces S3 are parallel to the Z direction in A of FIG. 5, they may be inclined with respect to the Z direction. That is, these side surfaces S3 may have a tapered shape. The shape of the substrate 21 of this embodiment is a hexahedron close to a rectangular parallelepiped, and the substrate 21 of this embodiment has four side surfaces S3. The front surface S1, the back surface S2, and the side surface S3 of the substrate 21 are examples of the first surface, the second surface, and the third surface of the substrate of the present disclosure, respectively.

The LD chip 11 of this embodiment includes a plurality of light emitting elements 23 on the front surface S1 of the substrate 21, and a plurality of lenses 41 and an antireflection film (AR film) 42 on the back surface S2 of the substrate 21. The antireflection film 42 of this embodiment is also formed on the side surface S3 of the substrate 21, and is continuously provided on the back surface S2 and side surface S3 of the substrate 21. Anti-reflection coating 42 is an example of a coating of the present disclosure.

The lenses 41, like the light emitting elements 23, are arranged in a two-dimensional array. The lenses 41 of this embodiment have a one-to-one correspondence with the light emitting elements 23, and each lens 41 is arranged in the +Z direction of one light emitting element 23. Further, the lens 41 of this embodiment is provided as a part of the substrate 21 on the back surface S2 of the substrate 21, as shown in FIG. 5A. Specifically, the lens 41 of this embodiment is a convex lens, and is formed as a part of the substrate 21 by etching the back surface S2 of the substrate 21 into a convex shape. According to this embodiment, by forming the lens 41 by etching the substrate 21, the lens 41 can be easily formed. Note that examples of lenses 41 other than convex lenses will be described later.

The antireflection film 42 is formed on the back surface S2 of the substrate 21 so as to cover the lens 41. The antireflection film 42 of this embodiment is formed on the side surface S3 of the substrate 21, but not on the surface S1 of the substrate 21. Therefore, the antireflection film 42 of this embodiment is not in contact with the light emitting element 23. For example, the antireflection film 42 has a function of preventing light that has entered the lens 41 from inside the substrate 21 from being reflected back into the substrate 21 . The antireflection film 42 is, for example, a film containing Si (silicon) element. The antireflection film 42 may be formed of only one film, or may be formed of two or more films. The antireflection film 42 of this embodiment is a laminated film including a SiN film (silicon nitride film) and a SiO ₂ film (silicon oxide film) that are laminated in this order on the back surface S2 and side surface S3 of the substrate 21. Although the antireflection film 42 has a uniform thickness in this embodiment, it may have a nonuniform thickness.

The light emitted from the plurality of light emitting elements 23 passes through the substrate 21 from the front surface S1 to the back surface S2 of the substrate 21, and enters the plurality of lenses 41. In this embodiment, light emitted from each light emitting element 23 enters one corresponding lens 41. This allows the light emitted from the plurality of light emitting elements 23 to be shaped for each lens 41. The light that has passed through the plurality of lenses 41 passes through the correction lens 16 (FIG. 3) and is irradiated onto the subject S (FIG. 1). Note that an example where the light emitting element 23 and the lens 41 do not have a one-to-one correspondence will be described later.

The side surface S3 of the substrate 21 of this embodiment is formed by dividing the substrate 21 into individual pieces. For example, when the substrate 21 is divided into pieces by dry etching such as RIE (Reactive Ion Etching), tapered side surfaces S3 are generally formed. If the substrate 21 is cut into pieces, there is a risk that deposits may adhere to the side surface S3 of the substrate 21, or that oxides may be generated on the side surface S3 of the substrate 21. If these deposits or oxides fall off the side surface S3 of the substrate 21, they may cause dust. Therefore, the antireflection film 42 of this embodiment is formed to cover the back surface S2 and side surface S3 of the substrate 21 after the substrate 21 is separated into pieces. This makes it possible to suppress the falling off of the deposits by covering the deposits with the anti-reflection film 42, and to suppress the generation of oxides by covering the side surface S3 with the anti-reflection film 42 before oxidation. . Further details of such effects will be discussed later.

FIG. 5B shows the layout of the lens 41 on the back surface S2 of the substrate 21. A in FIG. 5 shows a cross section taken along the line A-A' shown in B in FIG. In FIG. 5B, the lenses 41 are arranged in a two-dimensional array on the back surface S2 of the substrate 21, specifically, in a square lattice. Note that the lenses 41 may be arranged in a manner other than a square lattice arrangement, or may be arranged in a manner other than a two-dimensional array arrangement.

FIG. 6 is a plan view and a cross-sectional view showing the structure of the substrate 21 of the light emitting device 1a of the first embodiment. A in FIG. 6 is a plan view showing the structure of the substrate 21 before being diced (divided into pieces), and B in FIG. 6 is a cross-sectional view taken along the line AA' shown in A in FIG. be.

The substrate 21 of this embodiment includes a plurality of chip regions 51 and a scribe region (dicing region) 52, as shown in FIGS. 6A and 6B. Each chip region 51 is a region that becomes one LD chip 11 after dicing the substrate 21. The scribe area 52 is an area that is cut when the substrate 21 is diced. The substrate 21 of this embodiment is divided into a plurality of chip regions 51 by being cut in the scribe region 52 . As a result, a side surface S3 of the substrate 21 is formed in each LD chip 11.

Each chip region 51 has a rectangular (or square) planar shape and includes a lens region 51a and a peripheral region 51b. The lens region 51a includes a plurality of lenses 41 arranged in a two-dimensional array (B in FIG. 6). The peripheral region 51b annularly surrounds the lens region 51a.

The scribe region 52 has a planar shape that annularly surrounds the plurality of chip regions 51 for each individual chip region 51, and includes a plurality of scribe lines (dicing lines) 52a extending in the X direction and a plurality of scribing lines (dicing lines) 52a extending in the Y direction. It includes a plurality of scribe lines 52b. The substrate 21 of this embodiment is divided into a plurality of chip regions 51 by cutting these

scribe lines

52a and 52b by dry etching (or using a dicer). Thereafter, an antireflection film 42 (see FIG. 5) is formed on the back surface S2 and side surface S3 of the substrate 21. The symbol L indicates a plane passing through the scribe line 52b.

(3) Comparison between the first embodiment and the comparative example Next, with reference to FIGS. 7 to 13, the light emitting device 1a of the first embodiment and the light emitting device 1a of the comparative example will be compared. In the description of the light emitting device 1a of the comparative example, the same reference numerals as those used in the description of the light emitting device 1a of the present embodiment are used.

7 to 9 are cross-sectional views showing a method for manufacturing a light emitting device 1a of a comparative example.

First, a substrate 21 for the LD chip 11 is prepared, and a laminated film 22, a plurality of light emitting elements 23, a plurality of anode electrodes 24, and a cathode electrode 25 (not shown) are formed on the surface S1 of the substrate 21. A plurality of lenses 41 are formed on the back surface S2 of (A in FIG. 7). In this step, a plurality of post portions P including these light emitting elements 23 are formed on the surface S1 of the substrate 21. Next, the substrate 21 is placed on the support substrate 61 via the adhesive layer 62 (A in FIG. 7). As a result, the substrate 21 is adhered to the support substrate 61 by the adhesive layer 62. In FIG. 7A, the front surface S1 of the substrate 21 faces the support substrate 61 side, and the back surface S2 of the substrate 21 faces the opposite side of the support substrate 61.

Next, an antireflection film 42 is formed on the back surface S2 of the substrate 21 (B in FIG. 7). As a result, the lens 41 is covered with the antireflection film 42. In FIG. 7B, the light emitting element 23 is covered with the adhesive layer 62, so the antireflection film 42 is not in contact with the light emitting element 23.

Next, a resist film 63 is formed on the back surface S2 of the substrate 21 via the antireflection film 42 (C in FIG. 7). The resist film 63 is formed by applying a photoresist material to the antireflection film 42 .

Next, the resist film 63 is exposed using a photomask 64 (FIG. 8A). As a result, a plurality of non-exposed regions 63a and exposed regions 63b are formed within the resist film 63. The non-exposed area 63a is formed to form the chip area 51, and the exposed area 63b is formed to form the scribe area 52.

Next, the resist film 63 is developed (B in FIG. 8). As a result, the exposed area 63b is removed and the non-exposed area 63a remains. That is, the resist film 63 is patterned into the shape of the non-exposed region 63a.

Next, using the resist film 63, the antireflection film 42, the substrate 21, and the laminated film 22 are processed by dry etching such as RIE (C in FIG. 8). As a result, the groove T is formed so as to penetrate the antireflection film 42, the substrate 21, and the laminated film 22, and a plurality of LD chips 11 are formed from the substrate 21. Further, each LD chip 11 forms a side surface S3 of the substrate 21. In C of FIG. 8, the side surface S3 has a tapered shape due to the dry etching of the substrate 21. Therefore, the width of the groove T near the front surface S1 is narrower than the width of the groove T near the back surface S2.

The substrate 21 is separated into a plurality of LD chips 11 by dry etching shown in FIG. 8C. However, these LD chips 11 are still connected to each other via the support substrate 61. The individualization of the substrate 21 into these LD chips 11 is completed through the steps shown in FIG. 9A to FIG. 9C.

Next, the resist film 63 is removed (A in FIG. 9), so that the antireflection film 42 is exposed to the atmosphere.

Next, a dicing tape 65 provided with an adhesive layer 66 is prepared, and the dicing tape 65 is attached to the substrate 21 via the adhesive layer 66 and the antireflection film 42 (B in FIG. 9). As a result, the substrate 21 is adhered to the dicing tape 65 by the adhesive layer 66. This process is called tape mounting. In FIG. 9B, the back surface S2 of the substrate 21 faces the dicing tape 65 side, and the front surface S1 of the substrate 21 faces the opposite side of the dicing tape 65.

Next, the substrate 21 and the dicing tape 65 are peeled off from the supporting substrate 61, the orientation of the substrate 21 and the dicing tape 65 is reversed in the vertical direction, and the dicing tape 65 is pulled and stretched (C in FIG. 9). As a result, the separation of the substrate 21 into a plurality of LD chips 11 is completed. This process is called debonding.

Thereafter, these LD chips 11 are peeled off from the dicing tape 65, and each LD chip 11 is mounted on the LDD substrate 12. In this way, the light emitting device 1a of the comparative example is manufactured.

10 to 12 are cross-sectional views showing a method of manufacturing the light emitting device 1a of the first embodiment.

First, a substrate 21 for the LD chip 11 is prepared, and a laminated film 22, a plurality of light emitting elements 23, a plurality of anode electrodes 24, and a cathode electrode 25 (not shown) are formed on the surface S1 of the substrate 21. A plurality of lenses 41 are formed on the back surface S2 of (A in FIG. 10). In this step, a plurality of post portions P including these light emitting elements 23 are formed on the surface S1 of the substrate 21. The lens 41 is, for example, a convex lens having a diameter of 5 μm in plan view. Next, the substrate 21 is placed on the support substrate 61 via the adhesive layer 62 (A in FIG. 10). As a result, the substrate 21 is adhered to the support substrate 61 by the adhesive layer 62. In FIG. 10A, the front surface S1 of the substrate 21 faces the support substrate 61 side, and the back surface S2 of the substrate 21 faces the opposite side of the support substrate 61.

Next, a resist film 63 is formed on the back surface S2 of the substrate 21 (B in FIG. 10). The resist film 63 is formed, for example, by applying a photoresist material to the back surface S2 of the substrate 21 by spin coating.

Next, the resist film 63 is exposed using the photomask 64 (C in FIG. 10). As a result, a plurality of non-exposed regions 63a and exposed regions 63b are formed within the resist film 63. The non-exposed area 63a is formed to form the chip area 51, and the exposed area 63b is formed to form the scribe area 52. The width of the exposure area 63b is, for example, 40 μm.

Next, the resist film 63 is developed (A in FIG. 11). As a result, the exposed area 63b is removed and the non-exposed area 63a remains. That is, the resist film 63 is patterned into the shape of the non-exposed region 63a.

Next, the substrate 21 and the laminated film 22 are processed by dry etching such as RIE using the resist film 63 (B in FIG. 11). As a result, a groove T is formed to penetrate the substrate 21 and the laminated film 22, and a plurality of LD chips 11 are formed from the substrate 21. Furthermore, each LD chip 11 forms a side surface S3 of the substrate 21. In FIG. 11B, the side surface S3 has a tapered shape due to the dry etching of the substrate 21. Therefore, the width of the groove T near the front surface S1 is narrower than the width of the groove T near the back surface S2. In this embodiment, the groove T of a predetermined depth is formed by processing the substrate 21 and the laminated film 22 by plasma etching. The substrate 21 of this embodiment is a GaAs substrate with a thickness of 100 μm.

By dry etching shown in FIG. 11B, the substrate 21 is separated into a plurality of LD chips 11. However, these LD chips 11 are still connected to each other via the support substrate 61. The individualization of the substrate 21 into these LD chips 11 is completed through the steps shown in C in FIG. 11 to C in FIG. 12.

Next, the resist film 63 is removed (C in FIG. 11), so that the back surface S2 of the substrate 21 is exposed to the atmosphere. The resist film 63 is removed by, for example, chemical cleaning.

Next, an antireflection film 42 is formed on the back surface S2 of the substrate 21 (A in FIG. 12). As a result, the lens 41 is covered with the antireflection film 42. In FIG. 12A, the light emitting element 23 is covered with the adhesive layer 62, so the antireflection film 42 is not in contact with the light emitting element 23. On the other hand, since the side surface S3 of the substrate 21 of each LD chip 11 is exposed, the antireflection film 42 of this embodiment is also formed on the side surface S3 of the substrate 21 of each LD chip 11, and It is also formed on the side surface of the laminated film 22 of No. 11 and on the upper surface of the adhesive layer 62 in the groove T. The antireflection film 42 of this embodiment is a laminated film including a SiN film and a SiO ₂ film in this order, and is continuously formed on the back surface S2 and side surface S3 of the substrate 21 of each LD chip 11 by sputtering.

Next, a dicing tape 65 provided with an adhesive layer 66 is prepared, and the dicing tape 65 is attached to the substrate 21 via the adhesive layer 66 and the antireflection film 42 (FIG. 12B). As a result, the substrate 21 is adhered to the dicing tape 65 by the adhesive layer 66. This process is called tape mounting. In FIG. 12B, the back surface S2 of the substrate 21 faces the dicing tape 65 side, and the front surface S1 of the substrate 21 faces the opposite side of the dicing tape 65.

Next, the substrate 21 and the dicing tape 65 are peeled off from the support substrate 61, the orientation of the substrate 21 and the dicing tape 65 is reversed in the vertical direction, and the dicing tape 65 is pulled and stretched (C in FIG. 12). As a result, the separation of the substrate 21 into a plurality of LD chips 11 is completed. This process is called debonding. The adhesive (adhesive layers 62, 66) attached to each LD chip 11 is removed, for example, by chemical cleaning.

Thereafter, these LD chips 11 are peeled off from the dicing tape 65, and each LD chip 11 is mounted on the LDD substrate 12. In this way, the light emitting device 1a of this embodiment is manufactured.

FIG. 13 is a cross-sectional view for comparing the first embodiment and a comparative example.

FIG. 13A shows a method for manufacturing a light emitting device 1a of a comparative example, and specifically shows the process shown in FIG. 9A. When the substrate 21 is cut into pieces, there is a possibility that deposits 67 may adhere to the side surface S3 of the substrate 21, and there is a possibility that oxide 68 may be generated on the side surface S3 of the substrate 21. The deposit 67 is generated, for example, due to dry etching when dividing the substrate 21 into pieces. On the other hand, the oxide 68 is generated, for example, when the side surface of the substrate 21 is oxidized. When the substrate 21 is a GaAs substrate, the oxide 68 is, for example, an As oxide produced by oxidizing As atoms in the GaAs substrate. If the deposits 67 and oxides 68 fall off the side surface S3 of the substrate 21, they may cause dust. Although the side surface S3 of the substrate 21 shown in FIG. 13A has a non-tapered shape, it may have a tapered shape.

FIG. 13B shows a method for manufacturing the light emitting device 1a of this embodiment, and specifically shows the process shown in FIG. 12A. The antireflection film 42 of this embodiment is formed to cover the back surface S2 and side surface S3 of the substrate 21 after the substrate 21 is separated into pieces. Therefore, even if the deposit 67 adheres to the side surface S<b>3 of the substrate 21 , the deposit 67 is covered with the antireflection film 42 . This makes it possible to suppress the attached deposits 67 from falling off. Further, the side surface S3 of the substrate 21 is covered with an antireflection film 42 before oxidation. This makes it possible to suppress the oxide 68 from being generated on the side surface S3 of the substrate 21, and as a result, it becomes possible to suppress the oxide 68 from falling off. Note that when the oxide 68 is generated on the side surface S3 of the substrate 21, the oxide 68 is covered with the antireflection film 42, thereby making it possible to suppress the oxide 68 from falling off. In this manner, according to the present embodiment, it is possible to suitably protect the substrate 21 after being separated into pieces.

FIGS. 14 and 15 are cross-sectional views showing a method of manufacturing the light emitting device 1a of the first embodiment.

14A shows the same process as the process shown in FIG. 12C. First, each LD chip 11 is picked up from the dicing tape 65 (B in FIG. 14). As a result, each LD chip 11 is peeled off from the dicing tape 65. Next, the direction of the picked-up LD chip 11 is reversed in the vertical direction, and the LD chip 11 is transported to the LDD substrate 12 (C in FIG. 14). The LDD board 12 shown in FIG. FIG. 14C further shows a plurality of bumps 18 provided on these connection pads 32. FIG.

Next, the LD chip 11 is mounted on the LDD substrate 12, and each anode electrode 24 of the LD chip 11 is electrically connected to the corresponding connection pad 32 of the LDD substrate 12 by the bump 18 (A in FIG. 15). . Similarly, the cathode electrode 25 (not shown) of the LD chip 11 is electrically connected to the corresponding connection pad 32 of the LDD substrate 12 by the bump 18.

Next, an underfill material 72 is embedded in the gap between the LD chip 11 and the LDD substrate 12 (B in FIG. 15). As a result, the bump 18, anode electrode 24, cathode electrode 25, connection pad 32, etc. are protected by the underfill material 72. The underfill material 72 shown in FIG. 15B is also formed on the side surface S3 of the substrate 21 and the side surface of the laminated film 22 via the antireflection film 42, and is in contact with the antireflection film 42. The underfill material 72 is, for example, an insulating film such as a resin film.

Next, a bonding wire 74 is electrically connected to each bonding pad 71 using solder 73 (C in FIG. 15). The bonding wire 74 is used, for example, to electrically connect the light emitting device 1a of this embodiment to another device. In this way, the light emitting device 1a of this embodiment is manufactured.

FIG. 16 is a cross-sectional view showing details of the method for manufacturing the light emitting device 1a of the first embodiment.

16A shows the same process as the process shown in FIG. 15C. 16A shows foreign matter 75 generated on the LDD substrate 12. FIG. The foreign matter 75 is, for example, a fragment of the substrate 21 that is generated when the substrate 21 is processed. When such foreign matter 75 comes into contact with one conductor (or semiconductor) and another conductor (or semiconductor), it short-circuits these conductors. For example, if foreign matter 75 comes into contact with substrate 21 and solder 73, it will short circuit substrate 21 and solder 73. However, the back surface S2 and side surface S3 of the substrate 21 in this embodiment are covered with an antireflection film 42. Therefore, it becomes possible to suppress short circuits between the substrate 21 and a conductor (or semiconductor) such as the solder 73 by the antireflection film 42 (see A in FIG. 16).

B in FIG. 16 shows the same process as A in FIG. 14. B in FIG. 16 shows a "burr 76" that is a part of the antireflection film 42. In FIG. The burr 76 is caused, for example, by the antireflection film 42 formed on the upper surface of the adhesive layer 62 in the step shown in FIG. 12A. The burrs 76 can be removed from each LD chip 11 by washing the burrs 76 with pure water in the step shown in FIG. 14C. In this case, in the step shown in FIG. 12C, chemical cleaning to remove the adhesive and pure water cleaning to remove the burrs 76 are performed.

(4) Modification of the first embodiment FIG. 17 shows the structure of the light emitting device 1a of the first embodiment (A in FIG. 17) and the structure of the light emitting device 1a (B in FIG. 17) of the modification of the first embodiment. ) is a sectional view showing.

As shown in FIG. 17A, the antireflection film 42 of this embodiment includes a film 42a formed on the back surface S2 and side surface S3 of the substrate 21, and a film 42a formed on the back surface S2 and side surface S3 of the substrate 21. 42b. The film 42a is, for example, a SiN film. The film 42b is, for example, a SiO ₂ film. On the other hand, the substrate 21 is, for example, a GaAs substrate. In this embodiment, the substrate 21 is a non-Si based substrate, but the antireflection film 42 is a Si based film. Membrane 42a and membrane 42b are examples of a first membrane and a second membrane, respectively, of the present disclosure.

For example, the antireflection film 42 has a function of preventing light that has entered the lens 41 from inside the substrate 21 from being reflected back into the substrate 21 . Although the antireflection film 42 is made of SiN and SiO ₂ in this embodiment, it may be made of other materials.

B in FIG. 17 shows the structure of a light emitting device 1a according to a modification of the first embodiment. The light emitting device 1a of this modification includes an antireflection film 42 that covers the back surface S2 of the substrate 21, and another film 77 that covers the side surface S3 of the substrate 21. The antireflection film 42 of this modification is, for example, a laminated film including a SiN film and a SiO ₂ film. On the other hand, the film 77 may or may not function as an antireflection film. Further, the film thickness T2 of the film 77 may be the same as the film thickness T1 of the antireflection film 42, or may be different from the film thickness T1 of the antireflection film 42. The film 77 is, for example, an insulating film such as a SiO ₂ film, or a semiconductor film such as a Si film. The antireflection film 42 and film 77 of this variation are examples of the film of the present disclosure.

The film 77 is formed after the substrate 21 is separated into pieces. On the other hand, the antireflection film 42 of this modification may be formed before the substrate 21 is separated into pieces, or may be formed after the substrate 21 is separated into pieces. Furthermore, the antireflection film 42 of this modification may be formed before the film 77 is formed, or may be formed after the film 77 is formed.

According to this modification, by covering the side surface S3 of the substrate 21 with the film 77, it is possible to suppress falling off of deposits and generation of oxides. In this way, the side surface S3 of the substrate 21 may be protected by the antireflection film 42 or by another film 77. However, protecting the side surface S3 of the substrate 21 with the antireflection film 42 has the advantage that the step of forming the film 77 can be omitted. On the other hand, protecting the side surface S3 of the substrate 21 with the film 77 has the advantage that the material of the film 77 can be selected freely.

FIG. 18 is a cross-sectional view showing the structure of a light emitting device 1a according to another modification of the first embodiment.

The light emitting device 1a of this modification includes a semiconductor layer 81 in addition to the components of the light emitting device 1a of this embodiment. The semiconductor layer 81 is formed on the back surface S2 of the substrate 21. The light emitting element 23 and the lens 41 of this modification are formed on the front surface S1 and the back surface S2 of the substrate 21, respectively, but the lens 41 of this modification is not a part of the substrate 21 but a part of the semiconductor layer 81. It is formed as. Further, the antireflection film 42 of this modification is formed on the upper surface of the semiconductor layer 81, the side surface of the semiconductor layer 81, the side surface S3 of the substrate 21, and the side surface of the laminated film 22, and covers the lens 41. The semiconductor layer 81 is, for example, a Si layer.

As described above, the light emitting device 1a of this embodiment includes the antireflection film 42 provided on the side surface S3 of the substrate 21. Therefore, according to this embodiment, it is possible to suitably protect the substrate 21 after being singulated by the antireflection film 42. For example, by covering the side surface S3 of the substrate 21 with the antireflection film 42, it is possible to suppress the falling off of deposits from the side surface S3 of the substrate 21 and the generation of oxides on the side surface S3 of the substrate 21.

(Second embodiment)
FIG. 19 is a cross-sectional view showing an example of the structure of the substrate 21 of the light emitting device 1a of the second embodiment. Each of FIG. 19A to FIG. 19D shows a cross section of the substrate 21, etc. of the light emitting device 1a, similar to FIG. 5A, but illustration of the antireflection film 42, etc. is omitted.

Similar to the substrate 21 in FIG. 5A, the substrate 21 in FIG. 19A includes a plurality of lenses 41 that are convex lenses that correspond to the light emitting elements 23 on a one-to-one basis. Similarly, each of the substrates 21 in FIGS. 19B to 19D includes a plurality of lenses 41 that correspond one-to-one with the light emitting elements 23. However, the substrate 21 in B of FIG. 19 is equipped with a concave lens, the substrate 21 in C of FIG. 19 is equipped with a convex lens having a different shape (curvature), and the substrate 21 in D of FIG. It has both concave lenses. In this way, each lens 41 of this embodiment may be a convex lens or a concave lens. Further, each lens 41 of this embodiment may be a lens having a convex shape in a manner other than a convex lens, as in a third embodiment described later, or may be a lens having a concave shape in a manner other than a concave lens. .

(Third embodiment)
FIG. 20 is a cross-sectional view showing an example of the structure of the substrate 21 of the light emitting device 1a of the third embodiment. Each of FIGS. 20A to 20D shows a cross section of the substrate 21 and the like of the light emitting device 1a, similar to FIG. 5A, but illustration of the antireflection film 42 and the like is omitted.

In the substrate 21 of FIG. 20A, the light emitting element 23 and the lens 41 correspond to each other at N:1 (N is an integer of 2 or more). Therefore, in A of FIG. 20, light emitted from N light emitting elements 23 enters one lens 41. On the other hand, in the substrate 21 of FIG. 20B, the light emitting element 23 and the lens 41 correspond in a ratio of 1:N. Therefore, in B of FIG. 20, light emitted from one light emitting element 23 enters N lenses 41. In this way, each lens 41 of this embodiment does not have to correspond to the light emitting element 23 on a 1:1 basis.

In the substrate 21 of FIG. 20C, the light emitting element 23 and the lens 41 correspond in a 1:1 ratio. However, the substrate 21 in FIG. 20C is provided with a convex Fresnel lens. Further, in the substrate 21 in FIG. 20D, the light emitting element 23 and the lens 41 correspond in a 1:1 ratio. However, the substrate 21 in FIG. 20D includes a convex binary lens and a flat lens. In this way, each lens 41 of this embodiment may be a lens other than a convex lens or a concave lens.

Although the light emitting device 1a of the first to third embodiments is used as a light source of the distance measuring device 1, it may be used in other ways. For example, the light emitting device 1a of these embodiments may be used as a light source of an optical device such as a printer, or may be used as a lighting device.

Although the embodiments of the present disclosure have been described above, these embodiments may be implemented with various modifications within the scope of the gist of the present disclosure. For example, two or more embodiments may be combined and implemented.

Note that the present disclosure can also take the following configuration.

(1)
A substrate and
a light emitting element provided on the first surface of the substrate;
a lens provided on the second surface of the substrate;
a film provided on a third surface between the first surface and the second surface of the substrate;
A light emitting device comprising:

(2)
The light emitting device according to (1), wherein the film is provided on the second surface and the third surface of the substrate.

(3)
The light emitting device according to (2), wherein the film covers the lens.

(4)
The light emitting device according to (1), wherein the film is not in contact with the light emitting element.

(5)
The light emitting device according to (1), wherein the film is an antireflection film.

(6)
The light emitting device according to (1), wherein the film contains silicon.

(7)
The film described in (1) includes a first film provided on the third surface of the substrate and a second film provided on the third surface of the substrate via the first film. light emitting device.

(8)
The light emitting device according to (7), wherein the first film contains silicon and nitrogen, and the second film contains silicon and oxygen.

(9)
The light emitting device according to (1), wherein the substrate is a compound semiconductor substrate.

(10)
The light emitting device according to (9), wherein the substrate contains gallium and arsenic.

(11)
The light emitting device according to (1), wherein the third surface of the substrate has a tapered shape.

(12)
forming a light emitting element on the first surface of the substrate;
forming a lens on a second surface of the substrate;
Cutting the substrate into pieces,
After dividing the substrate into pieces, forming a film on a third surface between the first surface and the second surface of the substrate;
A method of manufacturing a light emitting device, comprising:

(13)
The method for manufacturing a light emitting device according to (12), wherein the film is formed on the second surface and the third surface of the substrate after the substrate is diced.

(14)
The method for manufacturing a light emitting device according to (13), wherein the film is formed to cover the lens.

(15)
The method for manufacturing a light emitting device according to (12), wherein the film is formed so as not to be in contact with the light emitting element.

(16)
The method for manufacturing a light emitting device according to (12), wherein the film is an antireflection film.

(17)
The film is formed to include a first film formed on the third surface of the substrate, and a second film formed on the third surface of the substrate via the first film. The method for manufacturing a light emitting device according to (12).

(18)
The method for manufacturing a light emitting device according to (12), wherein the substrate is a compound semiconductor substrate.

(19)
The method for manufacturing a light emitting device according to (12), wherein the third surface of the substrate is formed by dividing the substrate into pieces.

(20)
The method for manufacturing a light emitting device according to (12), wherein the substrate is separated into pieces by dry etching.

1: Distance measuring device, 1a: Light emitting device, 2: Light emitting unit, 2a: Light emitting element, 3: Drive unit,
4: power supply circuit, 5: light emitting side optical system, 6: light receiving side optical system, 7: light receiving section,
8: signal processing section, 9: control section, 9a: ranging section, 10: temperature detection section,
11: LD chip, 12: LDD board, 13: mounting board, 14: heat dissipation board,
15: Correction lens holding part, 16: Correction lens, 17: Wiring, 18: Bump,
21: Substrate, 22: Laminated film, 23: Light emitting element,
24: anode electrode, 25: cathode electrode,
31: Board, 32: Connection pad,
41: lens, 42: antireflection film, 42a: film, 42b: film,
51: chip area, 51a: lens area, 51b: peripheral area,
52: scribe area, 52a: scribe line, 52b: scribe line,
61: Support substrate, 62: Adhesive layer, 63: Resist film,
63a: non-exposed area, 63b: exposed area, 64: photomask,
65: dicing tape, 66: adhesive layer, 67: deposit, 68: oxide,
71: Bonding pad, 72: Underfill material, 73: Solder,
74: bonding wire, 75: foreign matter, 76: burr, 77: film,
81: Semiconductor layer

Claims

A substrate and
a light emitting element provided on the first surface of the substrate;
a lens provided on the second surface of the substrate;
a film provided on a third surface between the first surface and the second surface of the substrate;
A light emitting device comprising:
The light emitting device according to claim 1, wherein the film is provided on the second surface and the third surface of the substrate.
The light emitting device according to claim 2, wherein the film covers the lens.
The light emitting device according to claim 1, wherein the film is not in contact with the light emitting element.
The light emitting device according to claim 1, wherein the film is an antireflection film.
The light emitting device according to claim 1, wherein the film contains silicon.
The film includes a first film provided on the third surface of the substrate, and a second film provided on the third surface of the substrate via the first film. light emitting device.
The light emitting device according to claim 7, wherein the first film contains silicon and nitrogen, and the second film contains silicon and oxygen.
The light emitting device according to claim 1, wherein the substrate is a compound semiconductor substrate.
The light emitting device according to claim 9, wherein the substrate contains gallium and arsenic.
The light emitting device according to claim 1, wherein the third surface of the substrate has a tapered shape.
forming a light emitting element on the first surface of the substrate;
forming a lens on a second surface of the substrate;
Cutting the substrate into pieces,
After dividing the substrate into pieces, forming a film on a third surface between the first surface and the second surface of the substrate;
A method of manufacturing a light emitting device, including:
The method for manufacturing a light emitting device according to claim 12, wherein the film is formed on the second surface and the third surface of the substrate after the substrate is diced.
The method for manufacturing a light emitting device according to claim 13, wherein the film is formed to cover the lens.
13. The method for manufacturing a light emitting device according to claim 12, wherein the film is formed so as not to be in contact with the light emitting element.
The method for manufacturing a light emitting device according to claim 12, wherein the film is an antireflection film.
The film is formed to include a first film formed on the third surface of the substrate, and a second film formed on the third surface of the substrate via the first film. A method for manufacturing a light emitting device according to claim 12.
The method for manufacturing a light emitting device according to claim 12, wherein the substrate is a compound semiconductor substrate.
The method for manufacturing a light emitting device according to claim 12, wherein the third surface of the substrate is formed by dividing the substrate into pieces.
The method for manufacturing a light emitting device according to claim 12, wherein the substrate is separated into pieces by dry etching.