JP2020150155A - Control system for controlling polishing device for polishing substrate, and polishing method - Google Patents

Abstract

To provide a control system with improved yield and a polishing method for controlling a polishing device.SOLUTION: A defect data receiving unit 112 of a control system 102 receives defect data related to defects on a substrate. A processing data receiving unit 114 receives processing data regarding a processing content of the substrate in a polishing device 1000. A defect occurrence cause identification unit 116 identifies the defect occurrence cause on the basis of the defect data and the processing data. A defect corrective action unit 118 determines a defect corrective action for correcting the defect for the identified cause, and instructs the defect corrective action for at least one of a polishing unit 300, a cleaning unit 400, and an EFEM 200.SELECTED DRAWING: Figure 4

Description

The present invention relates to a control system for controlling a polishing device for polishing a substrate, and a polishing method.

In the manufacture of semiconductor devices, many types of materials are repeatedly formed in the form of a film on a substrate, for example, a silicon wafer, to form a laminated structure. In order to form this laminated structure, a technique for flattening the surface of the wafer is important. As a means for flattening the surface of such a wafer, a polishing apparatus (also referred to as a chemical mechanical polishing apparatus) that performs chemical mechanical polishing (CMP) is widely used.

A chemical mechanical polishing (CMP) apparatus generally includes a polishing table to which a polishing pad is attached, a top ring for holding a wafer, and a nozzle for supplying a polishing liquid onto the polishing pad. While supplying the polishing liquid from the nozzle onto the polishing pad, the wafer is pressed against the polishing pad by the top ring, and the top ring and the polishing table are moved relative to each other to polish the wafer and flatten its surface. The CMP apparatus has a cleaning unit that cleans the polished wafer and further dries it.

In such a polishing apparatus, it is required to improve the yield of substrate processing. Since the polishing apparatus has various processing units for polishing, cleaning, and the like, the occurrence of defects in each processing unit lowers the yield of the entire polishing apparatus. The yield of the entire polishing apparatus may be affected not only by the processing unit such as the polishing unit and the cleaning unit, but also by the transport mechanism (transport section) that transports the wafer. As described above, the yield of the entire polishing apparatus depends on various processing steps and transfer steps.

When a defect is found in a wafer being manufactured in a semiconductor factory, it is necessary to go back to the process in which the defect was found and the process upstream of the process to investigate the cause. If the time to stop the equipment that may have created a defect during the investigation of the cause is long, the production process will be delayed, leading to a decrease in production volume.

Japanese Patent Application Laid-Open No. 2000-269108

One embodiment of the present invention has been made to solve such a problem, and an object of the present invention is to provide a control system with improved yield and a polishing method for controlling a polishing apparatus.

In order to solve the above problem, in the first embodiment, in the control system for controlling the polishing device for polishing the substrate, the polishing device is polished with a polishing portion configured to polish the substrate. The control system includes a cleaning unit configured to clean the substrate and a transport unit configured to transport the substrate between the polishing unit and the cleaning unit, and the control system is of the substrate. A defect data receiving unit configured to receive defect data relating to defects, a processing data receiving unit configured to receive processing data relating to the processing content of the substrate in the polishing apparatus, the defect data, and the above. Based on the processing data, the defect occurrence cause identification unit configured to identify the defect occurrence cause and the defect correction action for correcting the defect for the identified occurrence cause are determined, and the above-mentioned A control system is configured in which at least one of the polishing unit, the cleaning unit, and the transport unit is provided with a defect correction treatment unit configured to instruct the defect correction treatment. ing.

In the present embodiment, the defect occurrence cause identification unit configured to identify the defect occurrence cause based on the defect data and the processing data, and the defect correction action for correcting the defect with respect to the identified occurrence cause. Yield for the polishing device, because it has a defect-correcting unit configured to direct defect-correcting treatment to at least one of the polishing unit, the cleaning unit, and the transporting unit. It is possible to provide an improved control system.

Here, the defect data is data indicating information regarding defects on the substrate. The defect data includes, for example, the presence or absence of defect type (dust on the wafer (hereinafter, also referred to as “particle”), the presence or absence of wafer scratches (hereinafter, also referred to as “scratch”), and polishing failure (hereinafter, “profile”). The type of defect such as "abnormality"), and the state of the defect (number, size, shape, color, position, distribution state of dust, scratch depth, amount indicating excess or deficiency of polishing, etc. Etc.) at least one of them.

The processing data is data indicating what kind of processing the substrate has undergone in the polishing apparatus. The processing data includes, for example, lot information for identifying the substrate individually or in units of multiple sheets, information on the processing received by the substrate in each process inside and outside the polishing apparatus, alarm information received by the substrate in each process, and the substrate. It is at least one of the consumable member information (type of consumable member such as polishing pad, usage time, etc.) used for the processing. The defective data receiving unit and the processed data receiving unit may be used as one data receiving unit. That is, as one embodiment of the present invention, one data receiving unit may receive defect data and processed data.

As a defect correction measure, for example, the constituent units (polishing part, cleaning part, transport part, etc.) of the polishing device causing the defect are immediately stopped and separated from the production line, or the cause of the defect is solved. It is possible to change the operation pattern (adjustment of the amount of polishing, adjustment of the amount of cleaning water, etc.) of the constituent units of the polishing device so as to do so.

In the second embodiment, after at least one of the polishing unit, the cleaning unit, and the transport unit executes the defect correction treatment, the treatment result data regarding the result of the defect correction treatment is received, and the treatment result data is used. The control system according to the first embodiment is adopted, which comprises a treatment result data processing unit configured so that the defect correction treatment can be changed based on the above.

The third embodiment adopts the configuration of the control system according to the first or second embodiment, which comprises a defect knowledge database configured to accumulate at least one of the defect data and the processed data. For example, lot information of defective wafers, defect types, defect occurrence causes, and defect corrective actions may be associated with each other to create a database and accumulated. As a result, it is possible to improve the operation method of the polishing apparatus and the accuracy of identifying the cause of the defect.

The fourth embodiment adopts a configuration of a polishing apparatus including the control system according to any one of the first to third embodiments, the polishing unit, the cleaning unit, and the transport unit.

The fifth form adopts a configuration of a polishing device system characterized by having the control system according to any one of the first to third forms and the plurality of the polishing devices.

In the sixth embodiment, a polishing device having a polishing unit for polishing the substrate, a cleaning unit for cleaning the polished substrate, and a transport unit for transporting the substrate between the polishing unit and the cleaning unit is used. In the polishing method for polishing the substrate, defect data relating to defects in the substrate is received, processing data relating to the processing content of the substrate in the polishing apparatus is received, and based on the defect data and the processing data, The cause of the defect is identified, the defect corrective action for correcting the defect is determined for the identified cause, and the polishing unit, the cleaning unit, and at least one of the transport unit are subjected to the determination. Therefore, it adopts a structure of a polishing method characterized by instructing the defect correction treatment.

In the seventh embodiment, after at least one of the polishing unit, the cleaning unit, and the transport unit executes the defect correction treatment, the treatment result data regarding the result of the defect correction treatment is received, and the treatment result data is used. Based on this, the polishing method according to the sixth embodiment is adopted, which comprises changing the defect correction treatment.

Form 8 adopts the configuration of the polishing method according to Form 6 or 7, wherein at least one of the defect data and the processed data is stored in the defect knowledge database.

FIG. 1 is a plan view of the polishing apparatus. FIG. 2 is a perspective view of the first polishing unit. FIG. 3A is a plan view of the cleaning unit. FIG. 3B is a side view of the cleaning unit. FIG. 4 is a block diagram of the polishing equipment system. FIG. 5 is a block diagram showing a neural network used for updating the database. FIG. 6 is a block diagram showing a neural network and a simulation model used for updating the database. FIG. 7 is a block diagram showing a neural network and a simulation model used for updating the database. FIG. 8 is a block diagram showing a neural network and a simulation model used for updating the database. FIG. 9 is a block diagram showing a neural network and a simulation model used for updating the database.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each of the following embodiments, the same or corresponding members may be designated by the same reference numerals and duplicate description may be omitted. In addition, the features shown in each embodiment can be applied to other embodiments as long as they do not contradict each other.

As an embodiment of the present invention, there are cases where there is only one polishing device and cases where there are a plurality of polishing devices. Further, the control system for controlling the polishing apparatus for polishing the substrate can be arranged in the polishing apparatus as a part of the polishing apparatus. Further, the control system can be arranged outside the polishing device as a device outside the polishing device. Further, one control system may control a plurality of polishing devices. In the following, the outline of the polishing apparatus will be described first. After that, a polishing device system that controls a plurality of polishing devices with one control system will be described.

<Polishing device>
FIG. 1 is a plan view of the polishing apparatus. As shown in FIG. 1, the polishing apparatus 1000 includes an EFEM (Equipment Front End Module) 200, a polishing unit 300, and a cleaning unit 400. Further, the polishing device 1000 includes a control unit 500 for controlling various operations of the EFEM 200, the polishing unit 300, and the cleaning unit 400.

The polishing unit 300 is a polishing unit configured to polish the substrate. The cleaning unit 400 is a cleaning unit configured to clean the polished substrate. The EFEM200 is configured to transport the substrate in the carrier, which is a container for storing and transporting a plurality of substrates, into the polishing apparatus 1000, and to transport the processed substrate from the polishing apparatus 1000 to the carrier. It is a department. Hereinafter, the EFEM 200, the polishing unit 300, and the cleaning unit 400 will be described.

<EFEM>
The EFEM 200 is a unit for passing the substrate before the treatment such as polishing and cleaning to the polishing unit 300 and receiving the substrate after the treatment such as polishing and cleaning from the cleaning unit 400. The EFEM200 includes a plurality of (four in this embodiment) front load portions 220. A cassette 222 for stocking a substrate is mounted on each of the front load portions 220.

The EFEM 200 includes a rail 230 installed inside the housing 100, and a plurality of (two in the present embodiment) transfer robots 240 arranged on the rail 230. The transfer robot 240 takes out the substrate before the processing such as polishing and cleaning from the cassette 222 and hands it to the polishing unit 300. Further, the transfer robot 240 receives the substrate after the processing such as polishing and cleaning from the cleaning unit 400 and returns it to the cassette 222.

<Polishing unit>
The polishing unit 300 is a unit for polishing a substrate. The polishing unit 300 includes a first polishing unit 300A, a second polishing unit 300B, a third polishing unit 300C, and a fourth polishing unit 300D. The first polishing unit 300A, the second polishing unit 300B, the third polishing unit 300C, and the fourth polishing unit 300D have the same configuration as each other. Therefore, only the first polishing unit 300A will be described below.

The first polishing unit 300A includes a polishing table 320A and a top ring 330A. The polishing table 320A is rotationally driven by a drive source (not shown). A polishing pad 310A is attached to the polishing table 320A. The top ring 330A holds the substrate and presses against the polishing pad 310A. The top ring 330A is rotationally driven by a drive source (not shown). The substrate is polished by being held by the top ring 330A and pressed against the polishing pad 310A.

Next, a transport mechanism for transporting the substrate will be described. The transport mechanism includes a lifter 370, a first linear transporter 372, a swing transporter 374, a second linear transporter 376, and a temporary stand 378.

The lifter 370 receives the substrate from the transfer robot 240. The first linear transporter 372 transports the substrate received from the lifter 370 between the first transport position TP1, the second transport position TP2, the third transport position TP3, and the fourth transport position TP4. The first polishing unit 300A and the second polishing unit 300B receive the substrate from the first linear transporter 372 and polish it. The first polishing unit 300A and the second polishing unit 300B pass the polished substrate to the first linear transporter 372.

The swing transporter 374 transfers the substrate between the first linear transporter 372 and the second linear transporter 376. The second linear transporter 376 transports the substrate received from the swing transporter 374 between the fifth transport position TP5, the sixth transport position TP6, and the seventh transport position TP7. The third polishing unit 300C and the fourth polishing unit 300D receive the substrate from the second linear transporter 372 and polish it. The third polishing unit 300C and the fourth polishing unit 300D pass the polished substrate to the second linear transporter 372. The substrate that has been polished by the polishing unit 300 is placed on the temporary storage table 378 by the swing transporter 374.

<Washing unit>
The cleaning unit 400 is a unit for cleaning and drying the substrate that has been polished by the polishing unit 300. The cleaning unit 400 includes a first cleaning chamber 410, a first transport chamber 420, a second cleaning chamber 430, a second transport chamber 440, and a drying chamber 450.

The substrate placed on the temporary storage table 378 is transported to the first cleaning chamber 410 or the second cleaning chamber 430 via the first transport chamber 420. The substrate is cleaned in the first cleaning chamber 410 or the second cleaning chamber 430. The substrate cleaned in the first cleaning chamber 410 or the second cleaning chamber 430 is transported to the drying chamber 450 via the second transport chamber 440. The substrate is dried in the drying chamber 450. The dried substrate is taken out from the drying chamber 450 by the transfer robot 240 and returned to the cassette 222.

<Detailed configuration of the first polishing unit>
Next, the details of the first polishing unit 300A will be described. FIG. 2 is a perspective view of the first polishing unit 300A. The first polishing unit 300A includes a polishing liquid supply nozzle 340A for supplying a polishing liquid or a dressing liquid to the polishing pad 310A. The polishing liquid is, for example, a slurry. The dressing liquid is, for example, pure water. Further, the first polishing unit 300A includes a dresser 350A for conditioning the polishing pad 310A. Further, the first polishing unit 300A includes an atomizer 360A for injecting a liquid or a mixed fluid of a liquid and a gas toward the polishing pad 310A. The liquid is, for example, pure water. The gas is, for example, nitrogen gas.

The top ring 330A is supported by a top ring shaft 332A. The top ring 330A is rotated about the axis of the top ring shaft 332A by a drive unit (not shown) as shown by an arrow AB. The polishing table 320A is supported by the table shaft 322A. The polishing table 320A is rotated about the axis of the table shaft 322A by a drive unit (not shown) as shown by an arrow AC.

The substrate WF is held by vacuum suction on the surface of the top ring 330A facing the polishing pad 310A. At the time of polishing, the polishing liquid is supplied from the polishing liquid supply nozzle 340A to the polishing surface of the polishing pad 310A. Further, at the time of polishing, the polishing table 320A and the top ring 330A are rotationally driven. The substrate WF is polished by being pressed against the polished surface of the polishing pad 310A by the top ring 330A.

<Detailed configuration of cleaning unit>
Next, the details of the cleaning unit 400 will be described. FIG. 3A is a plan view of the cleaning unit 400. FIG. 3B is a side view of the cleaning unit 400.

In the first transfer chamber 420, a support shaft 424 extending in the vertical direction and a first transfer robot 422 movably supported by the support shaft 424 are arranged. The first transfer robot 422 can be moved in the vertical direction along the support shaft 424 by a drive mechanism such as a motor. The first transfer robot 422 receives the substrate WF placed on the temporary storage table 378. The first transfer robot 422 transfers the substrate WF received from the temporary storage table 378 to the first cleaning chamber 410 or the second cleaning chamber 430.

In the first cleaning chamber 410, the upper primary cleaning module 412A and the lower primary cleaning module 412B are arranged along the vertical direction. Similarly, in the second cleaning chamber 430, the upper secondary cleaning module 432A and the lower secondary cleaning module 432B are arranged along the vertical direction. The upper primary cleaning module 412A, the lower primary cleaning module 412B, the upper secondary cleaning module 432A, and the lower secondary cleaning module 432B are cleaning machines that clean the substrate using a cleaning liquid. A temporary board 434 is provided between the upper secondary cleaning module 432A and the lower secondary cleaning module 432B.

The first transfer robot 422 is placed between the temporary storage table 378, the upper primary cleaning module 412A, the lower primary cleaning module 412B, the temporary storage table 434, the upper secondary cleaning module 432A, and the lower secondary cleaning module 432B. The substrate WF can be conveyed. The first transfer robot 422 has an upper hand and a lower hand. Since the slurry is attached to the substrate before cleaning, the first transfer robot 422 uses the lower hand when conveying the substrate before cleaning. On the other hand, the first transfer robot 422 uses the upper hand when transferring the washed substrate.

In the second transfer chamber 440, a support shaft 444 extending in the vertical direction and a second transfer robot 442 movably supported by the support shaft 444 are arranged. The second transfer robot 442 can be moved in the vertical direction along the support shaft 444 by a drive mechanism such as a motor. The second transfer robot 442 receives the substrate WF from the second cleaning chamber 430 and conveys it to the drying chamber 450.

In the drying chamber 450, the upper drying module 452A and the lower drying module 452B are arranged along the vertical direction. The upper drying module 452A includes a drying unit 456A for drying the substrate WF, and a fan filter unit 454A for supplying clean air to the drying unit 456A. The lower drying module 452B includes a drying unit 456B for drying the substrate WF, and a fan filter unit 454B for supplying clean air to the drying unit 456B.

The second transfer robot 442 can transfer the substrate WF between the upper secondary cleaning module 432A, the lower secondary cleaning module 432B, the temporary stand 434, the upper drying module 452A, and the lower drying module 452B. it can. Since the second transfer robot 442 transfers the washed substrate, it has only one hand.

The substrate WF is dried from the drying chamber 450 by the upper hand of the transfer robot 240 shown in FIG. 1 after being dried by the upper drying module 452A or the lower drying module 452B. The transfer robot 240 returns the substrate WF taken out from the drying chamber 450 to the cassette 222.

Next, a polishing device system that controls a plurality of polishing devices 1000 with one control system 102 will be described with reference to FIG. The polishing device system 101 includes a control system 102 and a plurality of polishing devices 1000. The plurality of polishing devices 1000 are arranged on a plurality of production lines 104-1, 104-2, ..., 104-N. A plurality of semiconductor manufacturing equipment such as an exposure apparatus, a dry etching apparatus, a CVD apparatus, and a polishing apparatus 1000 are arranged in each of the production lines 104-1, 104-2, ..., 104-N. In FIG. 4, only the polishing apparatus 1000 is shown. Other semiconductor manufacturing equipment is omitted. The plurality of polishing devices 1000 are referred to as polishing device group 108. The control system 102 is a yield improving system that controls the polishing device 1000 to improve the yield in polishing the substrate by the polishing device 1000 to improve the yield.

In the embodiment of FIG. 4, one control system 102 controls a plurality of polishing devices 1000. As another embodiment, the control system 102 may be arranged for each polishing device 1000. Further, the control system 102 may be arranged in a computer installed outside the factory where the polishing apparatus group 108 and the inspection apparatus group 110 are arranged. As a computer installed outside the factory, a cloud or the like is also possible. When a computer installed outside the factory is used, the computer is connected to the polishing device group 108 and the inspection device group 110 by communication means such as the Internet or a dedicated line.

The plurality of polishing devices 1000 are not limited to those having the same configuration and function, but may have different configurations and functions. For example, a polishing device 1000 suitable for polishing a metal film and a polishing device 1000 suitable for polishing an insulating film may be arranged. The polishing apparatus 1000 is provided with a number indicating a serial number of the production line 104 and a serial number in the production line 104 as "N-2".

A plurality of inspection devices 106 for inspecting the substrate are arranged on each production line 104-1, 104-2, ..., 104-N. The inspection device 106 checks for defects in the substrate and the like in light of a predetermined standard. Defects include dust, foreign matter, scratches, broken circuits, and excess or deficiency of film thickness. The inspection device 106 includes an SEM type inspection device, an optical inspection device, a film thickness inspection device, and the like. The plurality of inspection devices 106 are not limited to those having the same configuration and function, but may have different configurations and functions. The inspection device 106 is given a number indicating a serial number of the production line 104 and a serial number in the production line 104 as "N-2".

Various correspondences between the inspection device 106 and the polishing device 1000 are possible. For example, one inspection device 106 corresponds to one polishing device 1000, and the substrate can be inspected before and after polishing or during polishing. In some cases, one inspection device 106 corresponds to a plurality of polishing devices 1000, and the substrate to be processed by the plurality of polishing devices 1000 is inspected. Further, a plurality of inspection devices 106 may correspond to one polishing device 1000, and a plurality of inspection devices 106 may inspect the substrate processed by the one polishing device 1000.

Further, the inspection device 106 may be used in a process other than the polishing process by the polishing device 1000. The polishing device 1000 also has a film thickness sensor, measures the film thickness, and when there is an abnormality in the film thickness, the defect data receiving unit 112 informs that there is a defect via the signal line 122. Send.

In FIG. 4, each production line 104-1, 104-2, ..., 104-N has the same number of polishing devices 1000 and the same number of inspection devices 106, that is, N polishing devices 1000 and M polishing devices. It is said that there is an inspection device 106. However, the number of polishing devices 1000 and the number of inspection devices 106 in each production line 104 may differ for each production line 104. The plurality of inspection devices 106 are referred to as inspection device group 110.

The control system 102 includes a defect data receiving unit 112 configured to receive defect data related to substrate defects, and a processing data receiving unit 114 configured to receive processing data related to the processing content of the substrate in the polishing apparatus. Based on the defect data and the processing data, the defect occurrence cause identification unit 116 configured to identify the defect occurrence cause and the defect correction action for correcting the defect for the identified occurrence cause are determined. It has a defect correction treatment unit 118 configured to instruct defect correction treatment to at least one of a polishing unit, a cleaning unit, and a transport unit.

The control system 102 further receives treatment result data regarding the result of the defect correction treatment after at least one of the polishing unit, the cleaning unit, and the transport unit has executed the defect correction treatment, and the control system 102 receives the treatment result data regarding the result of the defect correction treatment, and is based on the treatment result data. It has a database update unit 142 (action result data processing unit) capable of changing corrective actions.

The defect data receiving unit 112, the processing data receiving unit 114, the defect occurrence cause identification unit 116, the defect corrective action unit 118, and the database update unit 142 receive instructions from the control unit 146 as described later, respectively. Perform the processing of. The defect data receiving unit 112, the processing data receiving unit 114, the defect occurrence cause identification unit 116, the defect corrective action unit 118, and the database update unit 142 signal each other without receiving instructions from the control unit 146. May be exchanged so that they operate in the order described later.

Each of the above units of the control system 102 is controlled by the control unit 146 so as to repeat the following flow. That is, the control unit 146
a) An instruction is sent to the defect data receiving unit 112 via the signal line 148 to receive the defect data related to the defect from the inspection device group 110 and collect the defect information. The defect data receiving unit 112 receives all the inspection data from the inspection apparatus group 110, and if the inspection data includes information indicating a defect, the defect data receiving unit 112 processes the inspection data as defect data.
The defect data receiving unit 112 may receive only the defect data from the inspection device group 110. When the defect data receiving unit 112 receives the defect data, the defect data receiving unit 112 transmits to that effect to the control unit 146 via the signal line 148.
Here, the inspection data means data obtained by inspecting the substrate by the inspection apparatus group 110.
b) Next, an instruction is sent to the processing data receiving unit 114 via the signal line 148, and the processing data receiving unit 114 is made to receive processing data regarding the processing content of the substrate in the polishing apparatus to collect production information. Let me. At this time, the processing data receiving unit 114 may receive the processing data regarding the processing content of the substrate only for the polishing apparatus 1000 in which the defect has occurred, and the processing data regarding the processing content of the substrate may be received for all the polishing apparatus 1000. You may receive it. c) Next, when the defect data receiving unit 112 receives the defect data from the inspection device group 110, it sends an instruction to the defect occurrence cause identification unit 116 via the signal line 148 to identify the defect occurrence cause. When the defect data receiving unit 112 does not receive the defect data from the inspection device group 110, the process returns to step a).
d) Next, an instruction is sent to the defect corrective action unit 118 via the signal line 148 to determine the defect corrective action for correcting the defect for the identified cause, and the polishing unit, the cleaning unit, and the transport unit are used. Have at least one of them instruct defect corrective action. At least one of the polishing part, the cleaning part and the conveying part takes defect correction measures according to the instructions.
e) Next, an instruction is sent to the defect data receiving unit 112 via the signal line 148 to receive the inspection data from the inspection device group 110. At the same time, an instruction is sent to the processing data receiving unit 114 via the signal line 148, the processing data receiving unit 114 is made to receive the processing data regarding the processing content of the substrate in the polishing apparatus, and the production information is collected. After that, an instruction is sent to the database update unit 142 via the signal line 148 to receive the treatment result data (received inspection data and processing data) regarding the result of the defect correction treatment, and the defect correction is performed based on the treatment result data. Change the procedure. In this way, corrective action is implemented and the effect is measured after implementation. Then, the process returns to step a), and steps a) to e) are repeated.

In step e), if the obtained treatment result data matches the previous treatment result data stored in the defect knowledge database 144 within a predetermined range, the database update unit 142 has a defect in the defect knowledge database 144. Do not change corrective action. The database update unit 142 changes the defect corrective action in the defect knowledge database 144 when the obtained treatment result data does not match the previous treatment result data within a predetermined range and is improved. The database update unit 142 sends an alarm to the control unit 146 when the obtained treatment result data does not match the previous treatment result data within a predetermined range and is deteriorated. The control unit 146 further sends an alarm to the control unit 500 or the host computer 126.

The relationship between the control system 102 and the control unit 500 in the polishing apparatus 1000 is as follows. When the control system 102 is included in the polishing device 1000, the control system 102 can be a part of the control unit 500. When the control system 102 is not included in the polishing device 1000, for example, in the case of FIG. 4 in which a plurality of polishing devices 1000 are operated, the control system 102 controls each part of the polishing device 1000 via the control unit 500. And defect corrective action can be taken.

The operation of the embodiment of the present invention can also be performed using the following software and / or system. For example, each polishing device 1000 controls the operation of a main controller (control unit 500) that controls each polishing device 1000 and each unit (EFEM 200, polishing unit 300, cleaning unit 400, etc.) of each polishing device 1000. It may have a plurality of unit controllers. The main controller and the unit controller each have a CPU, a memory, a recording medium, and software stored in the recording medium for operating each unit.

The control system 102 includes a CPU, a memory, a recording medium, software recorded on the recording medium, and the like. The control system 102 monitors and controls defects in the entire polishing apparatus 1000, and performs signal transmission / reception, information recording, and calculation for that purpose. The software is updatable. The software does not have to be updatable.

Next, each component of the control system 102 will be described. The defect data receiving unit 112 transmits defect data (information on substrate lot information, defects, processing conditions, etc.) from the inspection device group 110, the polishing device group 108, and the host computer 126 to the signal line 120, the signal line 122, and the signal, respectively. Receive via line 128. From the inspection device group 110, lot information of the substrate and data related to defects (dust, scratches, etc.) are transmitted via the signal line 120. From the polishing device group 108, data on lot information of the substrate and data on defects (identification number of the polishing device 1000, processing conditions, film thickness outside the specified value, etc.) are transmitted via the signal line 122.

The number of signal lines 120 and 122 may be as many as the number corresponding to the inspection device 106 and the polishing device 1000. Further, the signal line 120 and the signal line 122 may transmit data by time division multiplexing, and the number of the signal line 120 and the signal line 122 may be smaller than the total number of the inspection device 106 and the polishing device 1000.

From the host computer 126, the lot information of the substrate regarding the defects generated in the substrate in the manufacturing process before the manufacturing process shown in FIG. 4 and the data related to the defects (dust, scratches, etc., and whether or not the defects can be corrected by the polishing device 1000) are signals. It is transmitted to the defect data receiving unit 112 via the line 128.

The defect data receiving unit 112 sends the received defect data to the defect database 124 via the signal line 130. The defect database 124 accumulates defect data received from the defect data receiving unit 112 for each manufacturing line 104.

The defect data received by the defect data receiving unit 112 is as follows. From the inspection device group 110, the defect data receiving unit 112 provides lot information of the defective substrate, and in the case of particles (foreign matter) as defect information, data such as the number, size, and color of the particles, and scratches (scratches). In the case of, the number, size, depth, part (distance from the center of the substrate), etc. of scratches (scratches) are received. The defect data receiving unit 112 receives the lot information of the defective substrate and the maximum and minimum values of the film thickness distribution or the film thickness as the defect information from the polishing apparatus group 108.

The defect data receiving unit 112 also receives the same data from the host computer 126 as defect information in another process. That is, lot information of the defective substrate, data such as the number, size, and color of particles in the case of particles (foreign matter) as defect information, and the number and size of scratches (scratches) in the case of scratches (scratches). , Depth, site (distance from the center of the substrate), film thickness distribution or maximum and minimum values of film thickness, etc. are received.

The processing data receiving unit 114 receives processing data regarding the processing content of the substrate in the polishing apparatus 1000 (lot information of the substrate, information of the polishing apparatus 1000 that generated defects (process data, alarm history, history information of consumable members in the polishing apparatus 1000). Etc.)) is received from the polishing apparatus group 108 via the signal line 132. The processing data receiving unit 114 sends the received processing data to the polishing database 136 via the signal line 134. The polishing database 136 accumulates the processing data received from the processing data receiving unit 114 for each production line 104.

The processing data received by the processing data receiving unit 114 is as follows.
a) As information about the processing lot, lot information of the substrate, contents of each processing recipe of transfer / polishing / cleaning, (here, the processing recipe is given to each part of the polishing apparatus 1000 when processing the substrate. It is, for example, in the form of a list, which describes the instructions, procedures, settings, parameters, etc.
b) As process data, a log that can determine how the recipe assigned to each process of transport route and polishing / cleaning was actually processed.
c) A log in which the alarm generation / cancellation of each polishing device 1000, the ON / OFF of contacts are all recorded together with the time, and all the process data in the device is recorded at predetermined time intervals.
d) In order to guarantee the quality of each polishing device 1000, the data for determining the variation of the processing result from the rising and falling times of various data during the substrate processing and the standard deviation of the process data.
e) Usage time of consumable parts, etc.

The defect database 124 and the polishing database 136 transmit defect data and processing data to the database update unit 142 via the signal line 138 and the signal line 140, respectively. The database update unit 142 stores the received defect data and processing data in the defect knowledge database 144.

The defect knowledge database 144 contains defect data detected by the inspection device group 110 in the polishing process, defects detected in other than the polishing process and within a range that can be dealt with by the polishing device 1000, and detected by the polishing device group 108. Accumulate the processed data. The defects detected outside the polishing step are defect data and processing data transmitted from the host computer 126 to the defect data receiving unit 112 via the signal line 128.

The defect knowledge database 144 has data indicating the correspondence between the defect data and the processing data, the cause of the defect, and the defect corrective action. As a result of the inspection, the correspondence between the newly added defect data and the processing data, the cause of the defect, and the defect corrective action is updated by the database update unit 142 as follows. This will be described with reference to FIGS. 5 to 10.

The database update unit 142 can determine the cause of the defect and the defect corrective action by using any method such as a decision tree, a neural network, or a simulation in order to obtain a correspondence. FIG. 5 shows an example using a neural network. Figures 6 to 10 show an example using simulation. These are sample models, and the embodiments of the present invention are not limited thereto.

FIG. 5 is a block diagram showing a neural network 150 used for updating the database. The neural network 150 is implemented as a computer program that executes AI (artificial intelligence). A part of the neural network 150 may be implemented as hardware. The neural network 150 performs automatic learning, and specifically, machine learning may be performed, and deep learning may be performed as machine learning. Learning data (defect data and processing data) is input to the neural network 150, and the neural network 150 outputs output data (defect occurrence cause and defect correction treatment).

After the neural network 150 has trained, the neural network 150 is used in the actual polishing process. In the actual polishing process, the neural network 150 is input with learning data created from the data obtained in the actual polishing process, and outputs the above-mentioned output data (defect occurrence cause and defect corrective action).

FIG. 5 is a diagram showing a configuration example of the neural network 150. As shown in this figure, the neural network 150 has an input layer including neurons (input nodes) x1, x2, x3, ..., Xl that input input data (defect data and processed data). The neural network 150 includes m neurons y11, y21, y31, ..., ym1 (hidden node) and p neurons y12, y22, y32, ..., Yp2 (yp2) that connect the input node and the output node. It has an intermediate layer (hidden layer) including a hidden node). Further, the neural network 150 has an output layer including n neurons z1, z2, z3, ..., Zn (output nodes) that output the cause of the defect and the defect corrective action. Although only two intermediate layers are shown in this figure, one or three or more intermediate layers may be provided.

The neural network 150 may learn failure prediction according to machine learning (called deep learning or deep learning) by a multi-layer (four or more layers) neural network (deep neural network), for example. This figure is a 4-layer neural network (deep neural network).

The neural network 150 learns the normal / abnormal polishing of the polishing unit. The neural network 150 processes defect data and processing by so-called "supervised learning" according to a data set created based on a combination of defect data, normal data, and processing data acquired by the inspection device group 110 and the polishing device group 108. Learn the relationship between the data and the causes of defects and defect corrective actions. Here, "supervised learning" is a model in which a large number of sets of data of a certain input and a result (label) are given to a learning device to learn the features in those data sets and estimate the result from the input. That is, the relationship can be acquired inductively.

In addition, the neural network can accumulate only state variables in a state without abnormality, that is, when the polishing unit is operating normally, and can learn normal / abnormal polishing by so-called "unsupervised learning". .. For example, when the frequency of abnormalities in the polishing unit is extremely low, the “unsupervised learning” method is effective. Here, "unsupervised learning" means that by giving a large amount of input data to the neural network 150, it is possible to learn how the input data is distributed, and even if the corresponding teacher output data is not given. It is a method to learn to perform compression, classification, shaping, etc. on input data. The features in those datasets can be clustered among similar people. By using this result and assigning an output that optimizes it by setting some standard, normal / abnormal judgment can be realized.

In this figure, input data related to particles, scratches, profile abnormalities, and device abnormalities are input to neurons x1, x2, x3, ..., Xl, respectively. In this figure, one input data for each particle, scratch, profile abnormality, and equipment abnormality is input, but this is an example, and two or more input data for particles, scratch, profile abnormality, and equipment abnormality are input. You may. Further, input data other than input data related to particles, scratches, profile abnormalities, and device abnormalities may be input.

For neurons z1, z2, z3, ..., Zn, output data regarding recipes (that is, parameters, etc.), member replacement procedures, and unit stop are output, respectively. In this figure, one output data for each of the recipe, the member replacement procedure, and the unit stop is output, but this is an example, and two or more output data for the recipe, the member replacement procedure, and the unit stop are output. You may. Further, output data other than the output data related to the recipe, the member replacement procedure, and the stop of the unit may be output.

When new defect data and processing data are added, the number of rough defect types of input nodes and the number of corrective action nodes of output nodes may not be increased. However, even in this case, the number of input nodes and / or output nodes may be added or changed from the control server (in the same row as the host computer 126) above the host computer 126 and the polishing apparatus 1000.

Next, using the above-mentioned neural network 150 and simulation, another method of determining the cause of the defect and the defect corrective action will be described with reference to FIGS. 6 to 9. 6 to 9 are block diagrams showing a neural network and a simulation model used for updating the database. The procedure of FIGS. 6 to 9 improves the defect correction measures and improves the accuracy of the neural network 150. The initial forms of the neural network 150 and the simulation model g152 may be prepared in advance, or may be specified and / or updated by the host computer 126.

FIG. 6 is a diagram showing a simulation result when polishing is performed according to the corrective actions z1 to zn obtained by the neural network 150 before performing the corrected polishing. The simulation results are obtained by inputting corrective actions z1 to zn into the simulation model g152.

In FIG. 6, the mesosphere containing the m neurons y11, y21, y31, ..., Ym1 and p neurons y12, y22, y32, ..., Yp2 in FIG. 5 is referred to as a corrective action generation model f154. .. Further, the output layer containing n neurons z1, z2, z3, ..., Zn in FIG. 5 is referred to as corrective action 156. The simulation model g152 is input with the corrective action 156, and outputs the inspection data (or defect data) after polishing and the processing data as the simulation result 158. As the simulation model g152, a multivariable input / multivariable output function, a neural network, or the like can be used.

What is output as the simulation result 158 is the defect data described above. That is, it is data showing information on defects in the substrate. However, since the simulation result 158 is obtained as a result of corrective action, the simulation result 158 may be a normal value. In this figure, one simulation result 158 for each of particles, scratches, and profile abnormalities is output as the simulation result 158.

In this figure, one simulation result 158 for each of particles, scratches, and profile abnormalities is output. However, this is an example, and two or more simulation results 158 regarding particles, scratches, and profile abnormalities may be output. Further, a simulation result 158 other than the simulation result 158 relating to particles, scratches, and profile abnormalities may be output. The simulation results 158 relating to particles, scratches, and profile abnormalities are referred to as predicted value C, predicted value D, and predicted value E, respectively. The predicted value C, the predicted value D, and the predicted value E all have values that satisfy the specification values and the acceptance criteria at this stage.

After obtaining the predicted value C, predicted value D, and predicted value E by simulation, polishing is actually performed. The simulation model g152 is improved by the measured values obtained by actual polishing. The improved simulation model g152 will be referred to as the simulation model g'1521. This is shown in FIG. When a processing result C', a processing result D', and a processing result E'that are different from the predicted value C, the predicted value D, and the predicted value E are obtained, the processing result C is used by using the corrective action x156 shown in FIG. The simulation model g152 is improved so that', processing result D', and processing result E'are obtained. As a method of obtaining the improved simulation model g'1521, it is possible to change the coefficient of the function by the least squares method, change the neural network by back propagation, or the like.

After obtaining the improved simulation model g'1521, the acceptance reference values C, D, and E (that is, the predicted value C, the predicted value D, and the predicted value E) are used by the method shown in FIG. ) Is improved so that the corrective action generation model f154 can be obtained. This will be described with reference to FIG.

First, the improved simulation model g'1521 is used to determine corrective action x'1561 that can obtain acceptance criteria C, D, E. The method of obtaining the corrective action x'1561 that can obtain the passing reference values C, D, and E using the simulation model g'1521 is to solve the equation when the simulation model g'1521 is a function. When the simulation model g'1521 is a neural network, the method of obtaining the corrective action x'1561 is to use the dummy input data until the passing reference values C, D, and E can be obtained. It is to repeat learning. The learning of neural networks is to correct the weights and biases of neurons in neural networks by the backpropagation method.

After the corrective action x'1561 is obtained, the corrective action generation model f154 is improved so that the corrective action x'1561 is obtained, and the improved corrective action generation model f'1541 is obtained. The method of obtaining the corrective action generation model f'1541 that can obtain the corrective action x'1561 using the corrective action x'1561 uses dummy input data until the corrective action x'1561 can be obtained. The corrective action generation model f154 is to repeat learning as AI. The learning of neural networks is to correct the weights and biases of neurons in neural networks by the backpropagation method. In this way, the corrective action generation model f'1541 capable of generating the corrective action x'1561 is obtained.

6 to 8 are examples of methods for improving the corrective action generation model f154. It may be improved (learned) by other methods. For example, in the method shown in FIG. 8, a corrective action generation model is used by using the respective ideal values C'', D'', E'' and the simulation model g'1521 instead of the acceptance reference values C, D, and E. The corrective action generation model f''1542 may be obtained by learning f154. This is shown in FIG. Corrective action x ″ 1562 can be obtained by the corrective action generation model f ″ 1542.

In FIGS. 6 to 9, the cause of the defect and the corrective action for the defect are determined by using the neural network 150 and the simulation. In FIGS. 6-9, the simulation model 150'may be used instead of the neural network 150 to determine the corrective actions z1 to zn. That is, the simulation model 150'and the simulation model g152 may be used. The simulation result 158 is obtained by inputting the corrective actions z1 to zn obtained by the simulation model 150'to the simulation model g152.

Returning to FIG. 4, the defect occurrence cause identification unit 116 accesses the defect knowledge database 144, identifies the defect occurrence cause with respect to the newly added defect data and the processing data indicating the defect, and the defect corrective action unit. Output to 118. The data output by the defect occurrence cause identification unit 116 includes lot information of the substrate on which the defect has occurred, the polishing apparatus 1000 that generated the defect, and the unit in the polishing apparatus 1000 that generated the defect (sometimes referred to as a "chamber"). Identification information, cause of defect occurrence (part that generated the defect and / or processing content), etc. Factors that have generated defects include equipment failure and / or equipment malfunction and / or equipment setting error and / or device processing improperness.

The defect corrective action unit 118 accesses the defect knowledge database 144 for the input defect occurrence cause, and determines the defect corrective action for correcting the defect. The defect knowledge database 144 stores defect corrective actions corresponding to the causes of defects. After that, the defect corrective action unit 118 instructs at least one of the polishing unit 300, the cleaning unit 400, and the EFEM 200 to take corrective action. In the present embodiment, the defects to be corrected are the defects generated by the polishing device 1000 and the defects that can be dealt with by the polishing device 1000.

The data output by the defect corrective action unit 118 is the polishing device 1000 identification information, the unit identification information in the polishing device 1000, and specific corrective action. Corrective actions include a) unit stop, b) processing recipe change (tuning of each parameter, transfer route change, etc.), c) polishing device setting constant (parameter) change (related to the operation of the polishing device in addition to the processing recipe). If there is a parameter) etc.

The specific corrective measures corresponding to the cause of the defect, which are output by the defect corrective action unit 118, are as follows, for example.
1. 1. When there is a defect related to particles In the inspection after cleaning by the cleaning unit 400 in the polishing device 1000, basically, when it is detected that the number of particles tends to increase, corrective action is taken. When the number of particles increases and the number of particles exceeds the reference value, the corresponding cleaning module in the cleaning unit 400 is stopped so that the transport route using the cleaning module cannot be used. This will be described.

When cleaning is normally performed, parallel cleaning and transportation are performed using the upper cleaning module and the lower cleaning module in FIG. 3B, respectively. The four polishing units in the polishing device 1000 are a pair of two first polishing units 300A and a second polishing unit 300B on the right side of FIG. 1 and two third polishing units 300C and a fourth polishing unit 300D on the left side. To use. The two polishing units on the right are combined, for example, with the cleaning module on the top. At this time, the two polishing units on the left side are combined with the cleaning module on the lower side.

A typical transportation route is as follows.
Upper route: 1st polishing unit 300A → 2nd polishing unit 300B → Upper primary cleaning module 412A → Upper secondary cleaning module 432A → Upper drying module 452A
Lower route: 3rd polishing unit 300C → 4th polishing unit 300D → Lower primary cleaning module 412B → Lower secondary cleaning module 432B → Lower drying module 452B
Which of these transport routes is used is set by the transport recipe. In these typical transport routes, an example of stopping the cleaning module determined to be defective and disabling the transport route using the cleaning module is as follows. For example, if it is determined that there is an abnormality in the upper primary cleaning module 412A, corrective measures such as stopping the upper primary cleaning module 412A and using the lower route are adopted.

If it is determined that any of the polishing units is defective in these typical transfer routes, the polishing unit is stopped so that the transfer route using the polishing unit cannot be used. An example of this is as follows.
For example, when it is determined that there is an abnormality in the first polishing unit 300A, the first polishing unit 300A and the second polishing unit 300B are stopped, and polishing is performed by the third polishing unit 300C and the fourth polishing unit 300D. Adopt corrective action.

When it is detected that the number of particles is increasing, the following corrective measures are taken. That is, in the inspection after cleaning with the cleaning unit 400, when the amount of particles tends to increase, it is presumed that insufficient cleaning is the cause of the defect, and (1) the cleaning recipe is changed for cleaning. Increase time and / or chemical flow rate. (2) One or more corrections of the deviation of the chemical supply point (dropping on the wafer is not in the predetermined position) are judged as defect correction measures. If (2) is taken as a corrective measure, a correction chemical supply position fraud alarm is issued, the corresponding cleaning module is stopped, and a transport route that does not go through the relevant module is set so that the maintenance staff can correct the chemical solution supply point. Instruct to use.

When it can be determined in the inspection by the inspection apparatus group 110 that the map of particles (data showing the distribution state of particles) is caused by the shape of the roll member, it is presumed that the roll member is the cause of the defect. Then, (1) replacement of the roll member, (2) adjustment of the self-cleaning condition of the roll member (adjustment of the cleaning time of the roll member and the pressing load of the roll member against the self-cleaning plate), (3) self-cleaning of the roll member. One or more of the replacement of the cleaning plate (because there is a possibility of back contamination from the self-cleaning plate to the roll member) is judged as a defect correction measure.

Here, the self-cleaning of the roll member is a cleaning process of the roll member itself. The self-cleaning of the roll member is performed by cleaning the roll member in the cleaning unit 400 by using a self-cleaning plate instead of the wafer. The self-cleaning of the pen member, which will be described later, is a cleaning process of the pen member itself, and the self-cleaning of the pen member is also performed in the same manner.

If (1) and (3) are corrective measures, a member replacement alarm is issued, the corresponding cleaning module is stopped, and an instruction is given to use a transport route that does not go through the corresponding module. If (2) is a corrective measure, change the self-cleaning parameters such as cleaning time and pressing load and instruct the execution of self-cleaning. Here, the roll member is a component for cleaning the substrate WF. The roll member is attached to the rotating shaft in the cleaning module. The roll member is a sponge arranged on a cylinder (rotational shaft). The inspection devices included in the inspection device group 110 include a wafer surface inspection device, a defect inspection device, and the like, as described above. These are generally called inspection devices in the field of semiconductor manufacturing.

When it can be determined in the inspection by the inspection apparatus group 110 that the map of the particles is caused by the shape of the pen member, it is presumed that the pen member is the cause of the defect. Then, (1) replacement of the pen member, (2) adjustment of the self-cleaning condition of the pen member (adjustment of the cleaning time and pressing load of the pen member), (3) replacement of the self-cleaning plate of the pen member (from the self-cleaning plate). One or more of (because there is a possibility of reverse contamination of the pen member) is judged as a defect correction measure.

(1) If (3) is taken as a corrective action, a member replacement alarm will be issued, the corresponding cleaning module will be stopped, and an instruction will be given to use a transport route that does not go through the relevant module. If (2) is a corrective measure, change the self-cleaning parameters such as cleaning time and pressing load and instruct the execution of self-cleaning. Here, the pen member is a component for cleaning the substrate WF. The pen member is attached to a rotating shaft within the cleaning module. The pen member is a sponge arranged at the tip of the rotating shaft. The cleaning module in which the roll member is arranged and the cleaning module in which the pen member is arranged are usually separate cleaning modules.

In the inspection by the inspection device group 110, the number of particles tends to increase, but when the cause cannot be identified, the following cause identification measures are taken as defect correction measures. That is, all the polishing units 300 and the cleaning unit 400 that have processed the wafer WF whose particles tend to increase are transported so that the processing is performed only by the unit for each unit. The unit that is the source is identified by re-inspecting all the processed wafers with the inspection apparatus group 110. Instruct the execution of such a cause isolation test.

When the unit causing the defect is identified in the inspection by the inspection device group 110, the transport recipe is changed, the route does not go through the corresponding unit, and the defect corrective action for stopping the corresponding unit is instructed. To do.

2. 2. If there is a defect related to scratching, basically stop the unit in which the scratch occurred and disable the transport route using that unit. Then, take corrective measures to eliminate the cause.

In the inspection by the inspection device, when the scratch has a long shape on the wafer surface, the solid matter on the polishing table (diamond or slurry solid matter of the dresser disk) is the cause of the defect, so the polishing unit 300 The cleaning sequence is interrupted, pad cleaning (cleaning with an atomizer and dressing treatment) is performed, and defect correction measures are instructed to wash away the solid matter on the polishing table.

In the case of a scratch generated immediately after exchanging a lot of slurry in the polishing unit 300, the solid matter stuck in the pipe for supplying the slurry is supplied into the apparatus (that is, on the polishing table), and the solid matter is supplied. It is probable that scratches occurred due to the influence. Therefore, perform a long dummy discharge (that is, supply slurry but do not perform polishing) and wash the inside of the pipe thoroughly. At the same time, pad cleaning (cleaning with an atomizer and dressing treatment) is performed, and a defect correction measure for washing away the solid matter on the polishing table is instructed.

In the case of a scratch that occurs immediately after the polishing device 1000 has been idle (not polished) for a long time, the solid matter solidified by the slurry adhering to the slurry supply nozzle and top ring falls onto the polishing table. , It is probable that scratches occurred due to the influence of the solid matter. At this time, perform a long slurry nozzle cleaning and dummy dispense to thoroughly wash the inside of the pipe. At the same time, pad cleaning (cleaning with an atomizer and dressing treatment) is performed, and a defect correction measure for washing away the solid matter on the polishing table is instructed.

In the case of scratches that occur immediately after changing the polishing recipe, the pressure to press the wafer onto the pad is too strong in the water poly (polishing using only pure water) step performed before the completion of polishing, and the slurry attached to the wafer is sufficiently removed. It is thought that the cause is not so good. At this time, in the water polystep of the polishing recipe, the pressure for pressing the wafer against the pad is checked, and a defect correction measure for reducing the pressure within the range of the reference value allowed by the host computer 126 is instructed.

If the cause cannot be identified, the following cause identification measures are taken as defect correction measures. That is, for all the polishing units 300 that have processed the defective wafer, each polishing unit 300 is transported so that the processing is performed only by the polishing unit 300. After that, all the used wafers are re-inspected by the inspection apparatus group 110 to identify the polishing unit 300 as the source. Instruct the execution of such a cause isolation test.

3. 3. When there is a defect that the amount of polishing is insufficient If an abnormality (that is, a defect) is found by inspection by the film thickness measuring device mounted in the polishing device 1000, the polishing status information related to the wafer is not regarded as processing complete and reworked. The treatment (ie, regrinding followed by cleaning) is performed. This is a rework process performed by the polishing apparatus 1000 independently, without exchanging information with the host computer 126, that is, without being controlled by the host computer 126. The change of the polishing recipe due to the rework process follows the rework recipe received in advance from the host computer 126.

In the polishing process in which the timing of the end of polishing is determined by using the output from the end point detector that detects the end point of polishing during polishing, if the amount of polishing is insufficient, the overprocess time is lengthened as a defect correction measure. Here, the over-process time means an offset time for extra polishing after actually detecting a feature point (that is, the end point of polishing). And vice versa. That is, when the amount of polishing is excessive, the polishing time is shortened as a defect correction measure.

If there is an abnormality in the inspection result by the film thickness measuring device even after the rework process, the control unit 146 stops the used polishing unit 300. The control unit 146 prohibits the use of the transport route using the polishing unit 300.

When an abnormality is found by inspection by a film thickness measuring device outside the polishing device 1000, the host computer 126 requests the polishing device 1000 to reprocess as a new process (recipe). The polishing device 1000 performs the process according to the recipe.

4. If there is a defect such as an abnormal film thickness profile, the coping method at this time is 3. It is the same as the lack of polishing amount shown in the section. That is, the rework treatment (that is, the repolishing and the subsequent cleaning treatment) and other treatments are performed. Perform in the same way as in the section.

5. An example in which a defect was found but no corrective action was required In the inspection after cleaning with the cleaning unit 400, the defect was a particle, but the user of the polishing device 1000 exchanged lots of chemicals and slurries for polishing, and outside the polishing device 1000. It is not necessary to change the cleaning recipe if it is caused by a sticking substance in a certain pipe. However, after cleaning the inside of the pipe, information is transmitted to the host computer 126 to point out that the change on the user side may be the source. The reason for transmitting to the host computer 126 is to enable the user to stop production as soon as possible. As a result, the yield of the entire factory can be improved, including polishing devices made by manufacturers other than the polishing device 1000.

That is, if the cause is that the lot of the chemical solution used in the factory is switched, the same defect may occur in the lot processed by the polishing apparatus of another company. There is a possibility that there is a problem with the solid slurry of the slurry that has stuck in the piping outside the polishing device 1000, or the slurry or chemical solution that has just started to be used, so the host computer 126 has changed on the user side. The entire factory needs to be addressed by sending information that points out the potential source.

After the corrective action is taken, the control unit 146 measures the effect of the corrective action. That is, the control unit 146 sends an instruction to the defect data receiving unit 112, and the treatment result data of the polishing device 1000 related to the cause of occurrence (inspection data received from the inspection device group 110 and processing data received from the polishing device 1000). ) Is received.

After that, an instruction is sent to the database update unit 142 via the signal line 148 to receive the received action result data regarding the result of the defect corrective action, and to change the defect corrective action based on the action result data. The database update unit 142 accesses the defect knowledge database 144 and updates the defect knowledge database 144, if necessary, as described in step e) described above.

Although examples of embodiments of the present invention have been described above, the above-described embodiments of the present invention are for facilitating the understanding of the present invention and do not limit the present invention. The present invention can be modified and improved without departing from the spirit thereof, and it goes without saying that the present invention includes an equivalent thereof. In addition, any combination or omission of the scope of claims and the components described in the specification is possible within the range in which at least a part of the above-mentioned problems can be solved or at least a part of the effect is exhibited. Is.

100 Housing 101 Polishing device system 102 Control system 104 Manufacturing line 106 Inspection device 108 Polishing device group 110 Inspection device group 112 Defect data receiving unit 114 Processing data receiving unit 116 Defect occurrence cause identification unit 118 Defect correction treatment unit 124 Defect database 126 Host Computer 136 Polishing database 142 Database update unit 144 Defect knowledge database 146 Control unit 200 EFEM
220 Front load part 240 Transfer robot 300 Polishing unit 310A Polishing pad 320A Polishing table 330A Top ring 340A Polishing liquid supply nozzle 350A Dresser 360A Atomizer 370 Lifter 400 Cleaning unit 410 1st cleaning chamber 420 1st transport chamber 422 1st transport robot 430 2 Cleaning chamber 440 Second transport chamber 442 Second transport robot 450 Drying chambers 456A, 456B Drying unit 500 Control unit 1000 Polishing device WF substrate

Claims (8)

In a control system for controlling a polishing device for polishing a substrate,
The polishing device includes a polishing unit configured to polish a substrate and a polishing unit.
A cleaning unit configured to clean the polished substrate,
It has a transporting portion configured to transport the substrate between the polishing portion and the cleaning portion.
The control system includes a defect data receiving unit configured to receive defect data related to defects on the substrate.
A processing data receiving unit configured to receive processing data related to the processing content of the substrate in the polishing apparatus, and a processing data receiving unit.
A defect occurrence cause identification unit configured to identify the defect occurrence cause based on the defect data and the processing data, and
A defect corrective action for correcting the defect is determined for the identified cause of occurrence, and the defect corrective action is instructed to at least one of the polishing portion, the cleaning portion, and the transport portion. A control system characterized by having a defect corrective action unit configured as described above. After at least one of the polishing unit, the cleaning unit, and the transport unit executes the defect correction treatment, the defect correction treatment results are received as treatment result data, and the defect is based on the treatment result data. The control system according to claim 1, further comprising a treatment result data processing unit configured to be capable of changing the corrective action. The control system according to claim 1 or 2, wherein the control system has a defect knowledge database configured to accumulate at least one of the defect data and the processed data. A polishing apparatus comprising the control system according to any one of claims 1 to 3, the polishing unit, the cleaning unit, and the transport unit. A polishing device system comprising the control system according to any one of claims 1 to 3 and a plurality of the polishing devices. The substrate is polished by using a polishing apparatus having a polishing portion for polishing the substrate, a cleaning portion for cleaning the polished substrate, and a transport portion for transporting the substrate between the polishing portion and the cleaning portion. In the polishing method to polish,
Received defect data related to the defect of the substrate,
Upon receiving the processing data regarding the processing content of the substrate in the polishing apparatus,
Based on the defect data and the processing data, the cause of the defect is identified.
A defect corrective action for correcting the defect is determined for the identified cause of occurrence, and the defect corrective action is instructed to at least one of the polishing portion, the cleaning portion, and the transport portion. A polishing method characterized by that. After at least one of the polishing unit, the cleaning unit, and the transport unit executes the defect correction treatment, the treatment result data regarding the result of the defect correction treatment is received, and the defect is based on the treatment result data. The polishing method according to claim 6, wherein the corrective action is changed. The polishing method according to claim 6 or 7, wherein at least one of the defect data and the processing data is stored in the defect knowledge database.

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