JP2020142256A - Flux and solder paste - Google Patents
Flux and solder paste Download PDFInfo
- Publication number
- JP2020142256A JP2020142256A JP2019039361A JP2019039361A JP2020142256A JP 2020142256 A JP2020142256 A JP 2020142256A JP 2019039361 A JP2019039361 A JP 2019039361A JP 2019039361 A JP2019039361 A JP 2019039361A JP 2020142256 A JP2020142256 A JP 2020142256A
- Authority
- JP
- Japan
- Prior art keywords
- acid
- amide compound
- present
- range specified
- cyclic amide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 246
- 230000004907 flux Effects 0.000 title claims abstract description 162
- -1 cyclic amide compound Chemical class 0.000 claims abstract description 523
- 239000002253 acid Substances 0.000 claims abstract description 240
- 239000000539 dimer Substances 0.000 claims abstract description 206
- CFQZKFWQLAHGSL-FNTYJUCDSA-N (3e,5e,7e,9e,11e,13e,15e,17e)-18-[(3e,5e,7e,9e,11e,13e,15e,17e)-18-[(3e,5e,7e,9e,11e,13e,15e)-octadeca-3,5,7,9,11,13,15,17-octaenoyl]oxyoctadeca-3,5,7,9,11,13,15,17-octaenoyl]oxyoctadeca-3,5,7,9,11,13,15,17-octaenoic acid Chemical compound OC(=O)C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\OC(=O)C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\OC(=O)C\C=C\C=C\C=C\C=C\C=C\C=C\C=C\C=C CFQZKFWQLAHGSL-FNTYJUCDSA-N 0.000 claims abstract description 145
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 80
- 150000004985 diamines Chemical class 0.000 claims abstract description 67
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims abstract description 66
- 150000002763 monocarboxylic acids Chemical class 0.000 claims abstract description 6
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 129
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 129
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 129
- 239000003795 chemical substances by application Substances 0.000 claims description 124
- 150000001412 amines Chemical class 0.000 claims description 75
- 150000007524 organic acids Chemical class 0.000 claims description 60
- 239000002904 solvent Substances 0.000 claims description 59
- 150000002896 organic halogen compounds Chemical class 0.000 claims description 46
- 150000003628 tricarboxylic acids Chemical class 0.000 claims description 42
- 239000007795 chemical reaction product Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 23
- 239000003963 antioxidant agent Substances 0.000 claims description 18
- 230000003078 antioxidant effect Effects 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 16
- 235000005985 organic acids Nutrition 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- KYXHKHDZJSDWEF-LHLOQNFPSA-N CCCCCCC1=C(CCCCCC)C(\C=C\CCCCCCCC(O)=O)C(CCCCCCCC(O)=O)CC1 Chemical compound CCCCCCC1=C(CCCCCC)C(\C=C\CCCCCCCC(O)=O)C(CCCCCCCC(O)=O)CC1 KYXHKHDZJSDWEF-LHLOQNFPSA-N 0.000 claims description 11
- 150000007513 acids Chemical class 0.000 claims description 6
- 239000004359 castor oil Substances 0.000 claims description 5
- 235000019438 castor oil Nutrition 0.000 claims description 5
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 5
- 239000013638 trimer Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 97
- 230000009974 thixotropic effect Effects 0.000 abstract description 55
- 230000001629 suppression Effects 0.000 abstract description 12
- 239000013008 thixotropic agent Substances 0.000 abstract description 11
- 238000006068 polycondensation reaction Methods 0.000 abstract description 7
- 125000004122 cyclic group Chemical group 0.000 abstract description 6
- 150000003627 tricarboxylic acid derivatives Chemical class 0.000 abstract 3
- 230000000694 effects Effects 0.000 description 320
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 228
- 238000007665 sagging Methods 0.000 description 179
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 98
- 125000002015 acyclic group Chemical group 0.000 description 51
- TUEYHEWXYWCDHA-UHFFFAOYSA-N ethyl 5-methylthiadiazole-4-carboxylate Chemical compound CCOC(=O)C=1N=NSC=1C TUEYHEWXYWCDHA-UHFFFAOYSA-N 0.000 description 47
- MELXIJRBKWTTJH-ONEGZZNKSA-N (e)-2,3-dibromobut-2-ene-1,4-diol Chemical compound OC\C(Br)=C(/Br)CO MELXIJRBKWTTJH-ONEGZZNKSA-N 0.000 description 42
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 42
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 35
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 35
- 229910045601 alloy Inorganic materials 0.000 description 32
- 239000000956 alloy Substances 0.000 description 32
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 30
- 238000011156 evaluation Methods 0.000 description 25
- 229910052739 hydrogen Inorganic materials 0.000 description 25
- 239000001257 hydrogen Substances 0.000 description 25
- 229910052745 lead Inorganic materials 0.000 description 24
- 229910052797 bismuth Inorganic materials 0.000 description 23
- 238000005476 soldering Methods 0.000 description 20
- 150000001408 amides Chemical class 0.000 description 19
- 239000003921 oil Substances 0.000 description 18
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 16
- 229910052736 halogen Inorganic materials 0.000 description 16
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 16
- 230000008719 thickening Effects 0.000 description 16
- 150000002367 halogens Chemical class 0.000 description 15
- 239000000203 mixture Substances 0.000 description 14
- 238000001556 precipitation Methods 0.000 description 14
- 229910052785 arsenic Inorganic materials 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 13
- 229910052787 antimony Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 230000003993 interaction Effects 0.000 description 12
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 11
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 10
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 10
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 10
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 10
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 10
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 10
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 10
- 239000005642 Oleic acid Substances 0.000 description 10
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 10
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 10
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 10
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 10
- 229960004488 linolenic acid Drugs 0.000 description 10
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 10
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 10
- 235000021313 oleic acid Nutrition 0.000 description 10
- 229960002969 oleic acid Drugs 0.000 description 10
- 230000007480 spreading Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 8
- 239000001361 adipic acid Substances 0.000 description 8
- 235000011037 adipic acid Nutrition 0.000 description 8
- 230000000740 bleeding effect Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000000047 product Substances 0.000 description 7
- 239000001384 succinic acid Substances 0.000 description 7
- 238000012795 verification Methods 0.000 description 7
- 238000009736 wetting Methods 0.000 description 7
- ULQISTXYYBZJSJ-UHFFFAOYSA-N 12-hydroxyoctadecanoic acid Chemical compound CCCCCCC(O)CCCCCCCCCCC(O)=O ULQISTXYYBZJSJ-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 6
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 6
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 6
- OWRCNXZUPFZXOS-UHFFFAOYSA-N 1,3-diphenylguanidine Chemical compound C=1C=CC=CC=1NC(=N)NC1=CC=CC=C1 OWRCNXZUPFZXOS-UHFFFAOYSA-N 0.000 description 5
- 125000003368 amide group Chemical group 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 5
- 229910000039 hydrogen halide Inorganic materials 0.000 description 5
- 239000012433 hydrogen halide Substances 0.000 description 5
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 4
- 239000012190 activator Substances 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- UJMDYLWCYJJYMO-UHFFFAOYSA-N benzene-1,2,3-tricarboxylic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1C(O)=O UJMDYLWCYJJYMO-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 4
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- 150000004678 hydrides Chemical class 0.000 description 4
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 4
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- 229920000642 polymer Polymers 0.000 description 4
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 4
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- 150000001990 dicarboxylic acid derivatives Chemical class 0.000 description 2
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Images
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Abstract
Description
本発明は、はんだ付けに用いられるフラックス及びこのフラックスを用いたソルダペーストに関する。 The present invention relates to a flux used for soldering and a solder paste using this flux.
一般的に、はんだ付けに用いられるフラックスは、はんだ及びはんだ付けの対象となる接合対象物の金属表面に存在する金属酸化物を化学的に除去し、両者の境界で金属元素の移動を可能にする効能を持つ。このため、フラックスを使用してはんだ付けを行うことで、はんだと接合対象物の金属表面との間に金属間化合物が形成できるようになり、強固な接合が得られる。 Generally, the flux used for soldering chemically removes metal oxides present on the metal surface of the solder and the object to be soldered, allowing the movement of metal elements at the boundary between the two. Has the effect of soldering. Therefore, by performing soldering using flux, an intermetallic compound can be formed between the solder and the metal surface of the object to be bonded, and a strong bond can be obtained.
このようなはんだ付け用フラックスと、金属粉を含むソルダペーストでは、フラックスに含まれるチキソ剤によってチキソ性が付与される。チキソ剤は、フラックス中でネットワークを構築し、チキソ性を付与する。チキソ性を有するとフラックスはせん断力が掛かると、粘度が下がるため印刷性等の作業性が向上する。また、チキソ剤を含むことで、印刷ダレと称す印刷後のソルダペーストのダレ、加熱ダレと称す加熱により溶融する際のソルダペーストのダレがチキソ剤により形成されたネットワークにより保持されることでフラックスのダレが抑制される。 In such a soldering flux and a solder paste containing metal powder, thixotropy is imparted by the thixotropic agent contained in the flux. The thixotropic agent builds a network in the flux and imparts thixotropic properties. If the flux has thixotropic properties, the viscosity of the flux decreases when a shearing force is applied, so that workability such as printability is improved. In addition, by containing the thixotropy, the dripping of the solder paste after printing, which is called printing dripping, and the dripping of the solder paste when melting by heating, which is called heating dripping, are held by the network formed by the thixotropy, so that the flux The sagging is suppressed.
チキソ剤としては、チキソ性の付与、印刷性の向上、印刷ダレ、加熱ダレの抑制の観点から脂肪酸とアミンが脱水縮合したアミド化合物からなるアミド系チキソ剤が使用されている(例えば、特許文献1参照)。また、チキソ剤としては、ヒマシ硬化油からなるエステル系チキソ剤が使用されている。 As the thixo agent, an amide-based thixo agent composed of an amide compound obtained by dehydration condensation of a fatty acid and an amine is used from the viewpoint of imparting tixo property, improving printability, and suppressing printing sagging and heating sagging (for example, Patent Documents). 1). Further, as the thixotropy, an ester-based thixotropy made of hydrogenated castor oil is used.
アミド系チキソ剤では、アミド結合により分子内、分子間で水素結合を形成しやすく、高分子になると相溶性も悪く、均一な分散が難しく、それにより印刷性が安定しない。また、高分子のアミド化合物の量を増やすと、極度に粘度が高くなるため、印刷性が悪くなる。更に、エステル系チキソ剤でも、加熱ダレを十分に抑制することができない。また、はんだ付け時の熱履歴の違いによって実装後の仕上がり、例えば濡れ広がり性や濡れ不良(ディウェット)の有無等が全く違う場合がある。そのため、どのような熱履歴でも安定して仕上がりのよいはんだ付けが可能となるフラックスが求められる。 In the amide-based thixo agent, hydrogen bonds are easily formed in the molecule and between the molecules by the amide bond, and when it becomes a polymer, the compatibility is poor and uniform dispersion is difficult, so that the printability is not stable. Further, when the amount of the high molecular weight amide compound is increased, the viscosity becomes extremely high, so that the printability deteriorates. Further, even an ester thixotropy cannot sufficiently suppress heating sagging. In addition, the finish after mounting, such as the wettability and the presence or absence of poor wetting (dewetting), may be completely different due to the difference in the heat history at the time of soldering. Therefore, there is a need for a flux that enables stable and good-finished soldering regardless of the thermal history.
本発明は、このような課題を解決するためなされたもので、チキソ性を付与し、かつ、印刷性、印刷ダレの抑制能、加熱ダレの抑制能、はんだの濡れ広がり性、ディウェットの発生の抑制能に優れたフラックス及びフラックスを用いたソルダペーストを提供することを目的とする。 The present invention has been made to solve such a problem, and imparts chicivity, and has printability, ability to suppress print sagging, ability to suppress heat sagging, solder wettability, and occurrence of dewetting. It is an object of the present invention to provide a flux and a solder paste using the flux having an excellent ability to suppress the above.
環状アミド化合物と非環状アミド化合物からなるチキソ剤と、ダイマー酸、ダイマー酸に水素を添加した水添ダイマー酸、トリマー酸、トリマー酸に水素を添加した水添トリマー酸のいずれか、あるいは2種以上を含むフラックスでは、チキソ性を向上させ、このフラックスと金属粉を含むソルダペーストでは、印刷性を向上させ、かつ、印刷ダレと加熱ダレを抑制できることを見出した。また、このフラックスを使用してはんだ付けを行うと、はんだが良好に濡れ広がり、かつ、ディウェットの発生を抑制できることを見出した。 A thixo agent consisting of a cyclic amide compound and a non-cyclic amide compound, and one or two of dimer acid, hydrogenated dimer acid obtained by adding hydrogen to dimer acid, trimer acid, and hydrogenated trimeric acid obtained by adding hydrogen to trimer acid. It has been found that the flux containing the above can improve the thixophilicity, and the solder paste containing the flux and the metal powder can improve the printability and suppress the printing sagging and the heating sagging. It was also found that when soldering is performed using this flux, the solder can be satisfactorily wetted and spread, and the occurrence of dewetting can be suppressed.
そこで、本発明は、モノカルボン酸の反応物で2量体であるダイマー酸、ダイマー酸に水素を添加した水添ダイマー酸、モノカルボン酸の反応物で3量体であるトリマー酸、トリマー酸に水素を添加した水添トリマー酸の何れか、あるいは、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の2種以上と、ロジンと、チキソ剤と、溶剤を含み、チキソ剤は、環状アミド化合物と非環状アミド化合物からなり、環状アミド化合物を0.1wt%以上8.0wt%以下、非環状アミド化合物を0.5wt%以上8.0wt%以下で含み、かつ、環状アミド化合物と非環状アミド化合物の合計が1.5wt%以上10.0wt%以下であり、環状アミド化合物は、ジカルボン酸及び/またはトリカルボン酸と、ジアミン及び/またはトリアミンが環状に重縮合した分子量が3000以下のアミド化合物であり、非環状アミド化合物は、モノカルボン酸、ジカルボン酸及び/またはトリカルボン酸と、モノアミン、ジアミン及び/またはトリアミンが非環状に縮合したアミド化合物であるフラックスである。 Therefore, in the present invention, the reaction product of monocarboxylic acid is dimer acid, which is a dimer, hydrogenated dimer acid obtained by adding hydrogen to dimer acid, and the reaction product of monocarboxylic acid is trimeric acid and trimer acid which are trimeric. Contains any of hydrogenated trimeric acid added to, or two or more of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimeric acid, rosin, thiolic acid, and solvent. , Cyclic amide compound and acyclic amide compound, containing cyclic amide compound in 0.1 wt% or more and 8.0 wt% or less, acyclic amide compound in 0.5 wt% or more and 8.0 wt% or less, and cyclic amide compound. And the total of the acyclic amide compound is 1.5 wt% or more and 10.0 wt% or less, and the cyclic amide compound has a molecular weight of 3000 or less in which dicarboxylic acid and / or tricarboxylic acid and diamine and / or triamine are cyclically polycondensed. The acyclic amide compound is a flux which is an amide compound in which a monocarboxylic acid, a dicarboxylic acid and / or a tricarboxylic acid and a monoamine, a diamine and / or a triamine are acyclically condensed.
環状アミド化合物は、ジカルボン酸及びトリカルボン酸の炭素数が3以上10以下であることが好ましく、環状アミド化合物は、ジカルボン酸及びトリカルボン酸の炭素数が6以上10以下であることがより好ましい。 The cyclic amide compound preferably has a dicarboxylic acid and a tricarboxylic acid having 3 or more and 10 or less carbon atoms, and the cyclic amide compound more preferably has a dicarboxylic acid and a tricarboxylic acid having 6 or more and 10 or less carbon atoms.
また、環状アミド化合物は、ジアミン及びトリアミンの炭素数が2以上54以下であることが好ましく、環状アミド化合物は、ジアミン及びトリアミンの炭素数が6であるであることがより好ましい。 Further, the cyclic amide compound preferably has 2 or more and 54 or less carbon atoms of diamine and triamine, and more preferably the cyclic amide compound has 6 carbon atoms of diamine and triamine.
さらに、環状アミド化合物は、炭素数が3以上10以下のジカルボン酸と、炭素数が2以上54以下のジアミンが環状に重縮合したアミド化合物であることが好ましく、環状アミド化合物は、炭素数が6以上10以下のジカルボン酸と、炭素数が6のジアミンが環状に重縮合したアミド化合物であることがより好ましい。 Further, the cyclic amide compound is preferably an amide compound in which a dicarboxylic acid having 3 or more and 10 or less carbon atoms and a diamine having 2 or more and 54 carbon atoms or less are cyclically polycondensed, and the cyclic amide compound has a carbon number of carbon atoms. More preferably, it is an amide compound in which a dicarboxylic acid having 6 or more and 10 or less and a diamine having 6 carbon atoms are cyclically polycondensed.
また、環状アミド化合物は、ジカルボン酸及びトリカルボン酸の炭素数が3以上10以下、ジアミン及びトリアミンの炭素数が2以上54以下であり、非環状アミド化合物は、モノカルボン酸、ジカルボン酸及びトリカルボン酸の炭素数が2以上28以下、モノアミン、ジアミン及びトリアミンの炭素数が0以上54以下であることが好ましい。 The cyclic amide compound has a dicarboxylic acid and a tricarboxylic acid having a carbon number of 3 to 10 and a diamine and a triamine having a carbon number of 2 to 54, and the acyclic amide compound has a monocarboxylic acid, a dicarboxylic acid and a tricarboxylic acid. It is preferable that the number of carbon atoms in the compound is 2 or more and 28 or less, and the number of carbon atoms of monoamine, diamine and triamine is 0 or more and 54 or less.
また、チキソ剤は、さらにエステル化合物を含むことが好ましく、チキソ剤は、エステル化合物としてヒマシ硬化油を含むことがより好ましい。 Further, the thixotropy preferably further contains an ester compound, and the thixotropy more preferably contains a hydrogenated castor oil as an ester compound.
さらに、チキソ剤は、環状アミド化合物を0.5wt%以上1.5wt%以下、非環状アミド化合物を0.5wt%以上4.0wt%以下含むことが好ましく、チキソ剤は、エステル化合物を0wt%以上8.0wt%以下含むことが好ましい。 Further, the thixotropy preferably contains 0.5 wt% or more and 1.5 wt% or less of the cyclic amide compound, 0.5 wt% or more and 4.0 wt% or less of the acyclic amide compound, and the thixotropy contains 0 wt% of the ester compound. It is preferable that the content is 8.0 wt% or less.
また、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の何れか、あるいは、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の2種以上を0.5wt%以上20wt%以下含むことが好ましく、ロジンを30wt%以上60wt%以下含むことが好ましい。 Further, any one of dimer acid, hydrogenated dimer acid, trimer acid and hydrogenated trimer acid, or two or more kinds of dimer acid, hydrogenated dimer acid, trimer acid and hydrogenated trimer acid are 0.5 wt% or more and 20 wt%. It is preferable to contain rosin in an amount of 30 wt% or more and 60 wt% or less.
さらに、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸以外の有機酸を0wt%以上10wt%以下、アミンを0wt%以上20wt%、有機ハロゲン化合物を0wt%以上5wt%以下、アミンハロゲン化水素酸塩を0wt%以上2wt%以下、酸化防止剤を0wt%以上5wt%以下含むことが好ましい。 Further, organic acids other than dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid are 0 wt% or more and 10 wt% or less, amines are 0 wt% or more and 20 wt%, organic halogen compounds are 0 wt% or more and 5 wt% or less, amine halogens. It is preferable that the hydrohalate is contained in an amount of 0 wt% or more and 2 wt% or less, and the antioxidant is contained in an amount of 0 wt% or more and 5 wt% or less.
また、本発明は、上述したフラックスと、金属粉を含むソルダペーストである。 Further, the present invention is a solder paste containing the above-mentioned flux and metal powder.
環状アミド化合物と非環状アミド化合物からなるチキソ剤では、非環状アミド化合物が低分子の環状アミド化合物で架橋されることで、本発明のフラックスでは、チキソ剤が非環状アミド化合物からなる場合と比較して、非環状アミド化合物の含有量を増やすことなく、チキソ性を向上させることができ、チキソ剤の析出を抑制することができる。また、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸は、はんだ付けで想定される温度域での耐熱性を有し、はんだ付け時に活性剤として機能する。 In the thixo agent composed of the cyclic amide compound and the acyclic amide compound, the acyclic amide compound is crosslinked with the low molecular weight cyclic amide compound, and therefore, in the flux of the present invention, the comparison with the case where the thixo agent is composed of the acyclic amide compound. Therefore, the thixo property can be improved and the precipitation of the thixo agent can be suppressed without increasing the content of the acyclic amide compound. Further, dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid have heat resistance in a temperature range expected in soldering and function as an activator at the time of soldering.
このフラックスを用いたソルダペーストでは、にじみ、かすれ等が抑制された良好な印刷性を得ることができ、また、印刷後のソルダペーストが流れる印刷ダレを抑制することができる。更に、はんだ付け時の加熱によるソルダペーストの加熱ダレを抑制することができる。また、熱負荷の大きい条件下でも良好な濡れ広がりを示し、かつディウェットの発生を抑制することができる。 In the solder paste using this flux, it is possible to obtain good printability in which bleeding, blurring and the like are suppressed, and it is possible to suppress printing sagging in which the solder paste flows after printing. Further, it is possible to prevent the solder paste from sagging due to heating during soldering. In addition, it can show good wet spread even under a large heat load condition and can suppress the occurrence of dewetting.
<本実施の形態のフラックスの一例>
本実施の形態のフラックスは、チキソ剤と、ロジンと、モノカルボン酸の反応物で2量体であるダイマー酸、ダイマー酸に水素を添加した水添ダイマー酸、モノカルボン酸の反応物で3量体であるトリマー酸、トリマー酸に水素を添加した水添トリマー酸の何れか、あるいは、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の2種以上と、溶剤を含む。チキソ剤は、環状アミド化合物と非環状アミド化合物からなる。
<Example of flux of this embodiment>
The flux of the present embodiment is a dimer acid which is a dimer of a reaction product of a thixo agent, rosin and a monocarboxylic acid, a hydrogenated dimer acid obtained by adding hydrogen to the dimer acid, and a reaction product of a monocarboxylic acid. It contains any of trimer acid which is a quantity, hydrogenated trimeric acid obtained by adding hydrogen to trimeric acid, or two or more kinds of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, and a solvent. The thixotropy comprises a cyclic amide compound and a non-cyclic amide compound.
環状アミド化合物は、ジカルボン酸及び/またはトリカルボン酸と、ジアミン及び/またはトリアミンが環状に重縮合した分子量が3000以下、とりわけ分子量が1000以下の低分子系アミド化合物である。また、非環状アミド化合物は、モノカルボン酸、ジカルボン酸及び/またはトリカルボン酸と、モノアミン、ジアミン及び/またはトリアミンが非環状に重縮合した分子量が3000以下の非環状アミドオリゴマーや、分子量が3000超の非環状高分子系アミドポリマーである。 The cyclic amide compound is a low molecular weight amide compound having a molecular weight of 3000 or less, particularly 1000 or less, in which a dicarboxylic acid and / or a tricarboxylic acid and a diamine and / or a triamine are cyclically polycondensed. The acyclic amide compound is an acyclic amide oligomer having a molecular weight of 3000 or less, which is a non-cyclic polycondensation of a monocarboxylic acid, a dicarboxylic acid and / or a tricarboxylic acid, and a monoamine, a diamine and / or a triamine, and a molecular weight of more than 3000. It is a non-cyclic polymer amide polymer.
図1は、ジカルボン酸の分子構造の概要を示す模式図、図2は、ジアミンの分子構造の概要を示す模式図、図3は、非環状アミド化合物の分子構造の概要を示す模式図である。図1に示すジカルボン酸と、図2に示すジアミンを重縮合(脱水縮合)させることで、図3に示すように、非環状アミド化合物が合成される。 FIG. 1 is a schematic diagram showing an outline of the molecular structure of a dicarboxylic acid, FIG. 2 is a schematic diagram showing an outline of the molecular structure of a diamine, and FIG. 3 is a schematic diagram showing an outline of the molecular structure of an acyclic amide compound. .. By polycondensing (dehydrating condensation) the dicarboxylic acid shown in FIG. 1 and the diamine shown in FIG. 2, an acyclic amide compound is synthesized as shown in FIG.
図3に示す非環状アミド化合物からなるチキソ剤は、図1に示すジカルボン酸のカルボキシル基(COOH)と、図2に示すジアミンのアミノ基(NH2)が重縮合によりアミド結合し、アミド基C(=O)−NHの水素(H)と酸素(O)が分子内、分子間で水素結合することでネットワークが形成される。アミド結合箇所を(A)で示し、水素結合箇所を(B)で示す。 In the thixo agent composed of the acyclic amide compound shown in FIG. 3, the carboxyl group (COOH) of the dicarboxylic acid shown in FIG. 1 and the amino group (NH 2 ) of the diamine shown in FIG. 2 are amide-bonded by polycondensation to form an amide group. A network is formed by hydrogen bonding of C (= O) -NH hydrogen (H) and oxygen (O) within and between molecules. The amide bond site is indicated by (A), and the hydrogen bond site is indicated by (B).
図4は、非環状アミド化合物の分子構造の概要を示す模式図である。非環状アミド化合物が高分子化した場合、図4に示すように、分子内で水素結合(B)が進行するため、フラックス中で非常に溶解性(相溶性)が悪くなり、フラックス中で粗大な析出を発生してしまう場合があり、チキソ性が悪くなる。また、このようなフラックスと金属粉が混合されたソルダペーストでは、印刷性が悪く、また、印刷ダレ、加熱ダレが発生する。 FIG. 4 is a schematic diagram showing an outline of the molecular structure of the acyclic amide compound. When the acyclic amide compound is polymerized, as shown in FIG. 4, hydrogen bonds (B) proceed in the molecule, so that the solubility (compatibility) in the flux becomes very poor, and the acyclic amide compound becomes coarse in the flux. Precipitation may occur, resulting in poor thixophilicity. Further, in the solder paste in which such a flux and a metal powder are mixed, printability is poor, and printing sagging and heating sagging occur.
そこで、環状アミド化合物を非環状アミド化合物と併用することで、環状アミド化合物で非環状アミド化合物を非共有結合性の相互作用にて架橋し、比較的均一なチキソ剤成分のネットワークを構築して、過度のチキソ剤析出を抑制する。 Therefore, by using the cyclic amide compound in combination with the acyclic amide compound, the non-cyclic amide compound is crosslinked with the cyclic amide compound by a non-covalent interaction to construct a relatively uniform network of thixotropic agent components. , Suppresses excessive thiox agent precipitation.
図5は、環状アミド化合物の分子構造の概要を示す模式図である。さて、図1に示すジカルボン酸と、図2に示すジアミンを重縮合させることで、図5に示すように、低分子系アミドとして環状アミド化合物が合成される。 FIG. 5 is a schematic diagram showing an outline of the molecular structure of the cyclic amide compound. By polycondensing the dicarboxylic acid shown in FIG. 1 and the diamine shown in FIG. 2, a cyclic amide compound is synthesized as a low molecular weight amide as shown in FIG.
環状アミド化合物は、非環状アミド化合物よりも対称性が高いため、非環状の低分子系アミドと比較して、結晶化しやすいという性質を持つ。一方、非環状の低分子系アミドは、極性の末端基を有するため、フラックス中に相溶しやすく、結晶化しにくいことからネットワーク形成によるチキソ性を付与しにくい。これに対し、環状アミド化合物は、極性の末端基を有さないため、フラックス中に相溶しにくく、ネットワーク形成によるチキソ性を付与しやすい。 Since the cyclic amide compound has higher symmetry than the acyclic amide compound, it has a property of being easily crystallized as compared with the acyclic low molecular weight amide. On the other hand, since the acyclic low molecular weight amide has a polar terminal group, it is easily compatible with the flux and difficult to crystallize, so that it is difficult to impart thixotropic property due to network formation. On the other hand, since the cyclic amide compound does not have a polar terminal group, it is difficult to be compatible with the flux and it is easy to impart thixotropic property due to network formation.
これにより、環状アミド化合物と非環状アミド化合物からなるチキソ剤では、環状アミド化合物と非環状アミド化合物との分子間での水素結合が促進され、非環状アミド化合物の分子内での水素結合が阻害されると考えられる。 As a result, in the thixo agent composed of the cyclic amide compound and the acyclic amide compound, the hydrogen bond between the cyclic amide compound and the acyclic amide compound is promoted, and the hydrogen bond in the molecule of the acyclic amide compound is inhibited. It is thought that it will be done.
図6は、環状アミド化合物で非環状アミド化合物を架橋した分子構造の概要を示す模式図である。環状アミド化合物と非環状アミド化合物からなるチキソ剤では、図6に示すように、環状アミド化合物と非環状アミド化合物が水素結合(B)されることで、環状アミド化合物で非環状アミド化合物が非共有結合性の相互作用にて架橋された比較的均一な成分のネットワークが構築されると考えられる。 FIG. 6 is a schematic diagram showing an outline of a molecular structure in which a non-cyclic amide compound is crosslinked with a cyclic amide compound. In the thixo agent composed of the cyclic amide compound and the acyclic amide compound, as shown in FIG. 6, the cyclic amide compound and the acyclic amide compound are hydrogen-bonded (B), so that the cyclic amide compound is a non-cyclic amide compound. It is considered that a network of relatively uniform components bridged by covalent interactions is constructed.
従って、環状アミド化合物と非環状アミド化合物からなるチキソ剤を含むフラックスでは、非環状アミド化合物からなるチキソ剤と比較して、チキソ剤の過度な析出が抑制され、かつ、チキソ性に優れる。また、環状アミド化合物と非環状アミド化合物からなるチキソ剤を含むフラックスと金属粉からなるソルダペーストでは、印刷性に優れ、また、印刷ダレが抑制され、更に加熱ダレが抑制される。 Therefore, in the flux containing the thixotropic agent composed of the cyclic amide compound and the acyclic amide compound, the excessive precipitation of the thixotropic agent is suppressed and the thixotropic property is excellent as compared with the thixotropic agent composed of the cyclic amide compound. Further, the solder paste composed of a flux containing a thixo agent composed of a cyclic amide compound and a non-cyclic amide compound and a metal powder is excellent in printability, suppresses printing sagging, and further suppresses heating sagging.
環状アミド化合物と非環状アミド化合物は、カルボン酸の数をn、アミンの数をnとしたとき、[n+n]型と表される。環状アミド化合物は、[1+1]型から[n+n]型が構築されるが、好ましくは、[1+1]型〜[3+3]型、特に好ましくは[2+2]型である。図5は、ジカルボン酸とジアミンが環状に重縮合した[2+2]型の一例であり、環状アミド化合物は、ジカルボン酸とジアミンが環状に重縮合した[2+2]型が好ましい。 Cyclic amide compounds and acyclic amide compounds are represented as [n + n] type when the number of carboxylic acids is n and the number of amines is n. The cyclic amide compound is constructed from the [1 + 1] type to the [n + n] type, preferably the [1 + 1] type to the [3 + 3] type, and particularly preferably the [2 + 2] type. FIG. 5 shows an example of a [2 + 2] type in which a dicarboxylic acid and a diamine are polycondensed cyclically, and the cyclic amide compound is preferably a [2 + 2] type in which a dicarboxylic acid and a diamine are polycondensed cyclically.
なお、環状アミド化合物は、トリカルボン酸とジアミンが環状に重縮合し、トリカルボン酸の官能基の1つが他の化合物と未結合なフリーの状態となっている[2+2]型、トリカルボン酸とジアミンが環状に重縮合してかご型構造をなす[2+3]型、ジカルボン酸とトリアミンが環状に重縮合してかご型構造をなす[3+2]型等も含まれる。 The cyclic amide compound is a [2 + 2] type in which tricarboxylic acid and diamine are polycondensed cyclically and one of the functional groups of the tricarboxylic acid is unbonded to another compound, and tricarboxylic acid and diamine are contained. Also included are the [2 + 3] type, which is polycondensed cyclically to form a cage-type structure, and the [3 + 2] type, in which dicarboxylic acid and triamine are polycondensed cyclically to form a cage-type structure.
これにより、環状アミド化合物は、ジカルボン酸とジアミンが環状に重縮合したアミドオリゴマー、トリカルボン酸とジアミンが環状に重縮合したアミドオリゴマー、ジカルボン酸とトリアミンが環状に重縮合したアミドオリゴマー、トリカルボン酸とトリアミンが環状に重縮合したアミドオリゴマー、ジカルボン酸及びトリカルボン酸とジアミンが環状に重縮合したアミドオリゴマー、ジカルボン酸及びトリカルボン酸とトリアミンが環状に重縮合したアミドオリゴマー、ジカルボン酸とジアミン及びトリアミンが環状に重縮合したアミドオリゴマー、トリカルボン酸とジアミン及びトリアミンが環状に重縮合したアミドオリゴマー、ジカルボン酸及びトリカルボン酸とジアミン及びトリアミンが環状に重縮合したアミドオリゴマーの何れでも良い。 As a result, the cyclic amide compound includes an amide oligomer in which dicarboxylic acid and diamine are cyclically polycondensed, an amide oligomer in which tricarboxylic acid and diamine are cyclically polycondensed, an amide oligomer in which dicarboxylic acid and triamine are cyclically polycondensed, and tricarboxylic acid. An amide oligomer in which triamine is cyclically polycondensed, an amide oligomer in which dicarboxylic acid and tricarboxylic acid and diamine are cyclically polycondensed, an amide oligomer in which dicarboxylic acid and tricarboxylic acid and triamine are cyclically polycondensed, and a dicarboxylic acid and diamine and triamine are cyclic. It may be any of an amide oligomer polycondensed with, an amide oligomer obtained by cyclically polycondensing tricarboxylic acid, diamine and triamine, and an amide oligomer obtained by cyclically polycondensing dicarboxylic acid and tricarboxylic acid with diamine and triamine.
また、非環状アミド化合物は、モノカルボン酸とジアミン及び/またはトリアミンが非環状に重縮合したアミド化合物である場合、ジカルボン酸及び/またはトリカルボン酸とモノアミンが非環状に重縮合したアミド化合物である場合等、モノカルボン酸またはモノアミンを含むアミド化合物であると、モノカルボン酸、モノアミンがターミナル分子(terminal molecules)として機能し、分子量を小さくした非環状アミドオリゴマーとなる。また、非環状アミド化合物は、ジカルボン酸及び/またはトリカルボン酸と、ジアミン及び/またはトリアミンが非環状に重縮合したアミド化合部である場合、非環状高分子系アミドポリマーとなる。更に、非環状アミド化合物は、モノカルボン酸とモノアミンが非環状に重縮合したアミド化合物も含まれる。 Further, the acyclic amide compound is an amide compound in which a dicarboxylic acid and / or a tricarboxylic acid and a monoamine are acyclically polycondensed when the monocarboxylic acid and diamine and / or triamine are acyclically polycondensed. In some cases, for example, in the case of an amide compound containing a monocarboxylic acid or a monoamine, the monocarboxylic acid and the monoamine function as terminal molecules to form an acyclic amide oligomer having a reduced molecular weight. Further, the acyclic amide compound is an acyclic polymer-based amide polymer when it is an amidation site in which a dicarboxylic acid and / or a tricarboxylic acid and a diamine and / or a triamine are polycondensed in an acyclic manner. Further, the acyclic amide compound also includes an amide compound in which a monocarboxylic acid and a monoamine are polycondensed in a non-cyclic manner.
以下に、モノカルボン酸とモノアミンが非環状に縮合したアミド化合物がネットワークを形成できる理由を説明する。 The reason why an amide compound in which a monocarboxylic acid and a monoamine are acyclically condensed can form a network will be described below.
モノカルボン酸の分子構造を以下の化(1)式に示し、モノアミンの分子構造を以下の化(2)式に示し、モノカルボン酸とモノアミンが縮合した非環状アミド化合物の分子構造を以下の化(3)式に示す。 The molecular structure of the monocarboxylic acid is shown in the following formula (1), the molecular structure of the monoamine is shown in the following formula (2), and the molecular structure of the acyclic amide compound in which the monocarboxylic acid and the monoamine are condensed is shown below. It is shown in equation (3).
化(1)式に示すモノカルボン酸のカルボキシル基(COOH)と、化(2)式に示すモノアミンのアミノ基(NH2)が縮合によりアミド結合することで、化(3)式に示す非環状アミド化合物が形成される。また、非環状アミド化合物のアミド基C(=O)−NHの水素(H)と酸素(O)が、分子間で水素結合することでつながっていく。非環状アミド化合物の分子内のアミド結合箇所を(A)で示し、非環状アミド化合物の分子間の水素結合箇所を(B)で示す。 The carboxyl group (COOH) of the monocarboxylic acid represented by the chemical formula (1) and the amino group (NH 2 ) of the monoamine represented by the chemical formula ( 2 ) are amide-bonded by condensation to form a non-formal compound (3). Cyclic amide compounds are formed. Further, hydrogen (H) and oxygen (O) of the amide group C (= O) -NH of the acyclic amide compound are connected by hydrogen bonding between the molecules. The intramolecular amide bond site of the acyclic amide compound is indicated by (A), and the intermolecular hydrogen bond site of the acyclic amide compound is indicated by (B).
このように、分子内に1つのアミド基を持つモノアミド(モノアマイド)は、水素結合によりつながっていく。この水素結合によるモノアミドの集合体は超分子として取り扱わる。超分子とは、水素結合、疎水性相互作用等の非共有結合性の相互作用から構築された分子の集合体を指す。水素結合は強い相互作用を示し、安定した構造となる。 In this way, monoamides (monoamides) having one amide group in the molecule are connected by hydrogen bonds. The aggregate of monoamides formed by hydrogen bonds is treated as a supramolecular. Supramolecules refer to aggregates of molecules constructed from non-covalent interactions such as hydrogen bonds and hydrophobic interactions. Hydrogen bonds show strong interaction and have a stable structure.
モノカルボン酸とモノアミンが縮合したモノアミドである非環状アミド化合物は、アミド結合に由来する水素結合による相互作用でつながり、加えて、水素結合による相互作用でつながった分子鎖、とりわけ、主鎖のアミド結合に由来する水素結合や、側鎖による疎水性相互作用等による分子鎖間の相互作用によって架橋部位を形成し3次元ネットワークへと成長する。 Acyclic amide compounds, which are monoamides in which monocarboxylic acids and monoamines are condensed, are linked by hydrogen bond-derived interaction with amide bonds, and in addition, molecular chains linked by hydrogen bond interactions, especially main chain amides. A hydrogen bond derived from the bond and an interaction between molecular chains due to a hydrophobic interaction by a side chain or the like form a bridging site and grow into a three-dimensional network.
以上のように、モノカルボン酸とモノアミンが縮合した非環状アミド化合物は、アミド基を1つしか持たないものの、水素結合による非共有性相互作用により結合することで、ネットワークを形成できる。 As described above, the acyclic amide compound obtained by condensing a monocarboxylic acid and a monoamine has only one amide group, but can form a network by binding by a non-covalent interaction by a hydrogen bond.
これにより、非環状アミド化合物が、モノカルボン酸とモノアミンが非環状に重縮合したアミド化合物を含み得る。 Thereby, the acyclic amide compound may include an amide compound in which a monocarboxylic acid and a monoamine are polycondensed acyclically.
なお、チキソ剤として含有する環状アミド化合物は、ジカルボン酸及び/またはトリカルボン酸と、ジアミン及び/またはトリアミンが環状に重縮合したアミド化合物で、アミド基を2つ以上持つ。 The cyclic amide compound contained as a thixo agent is an amide compound in which a dicarboxylic acid and / or a tricarboxylic acid and a diamine and / or a triamine are cyclically polycondensed, and has two or more amide groups.
これにより、環状アミド化合物がチキソ剤に加わることで、水素結合による相互作用でつながったモノアミドの集合体である非環状アミド化合物が、環状アミド化合物を介してつながる。 As a result, when the cyclic amide compound is added to the thixo agent, the non-cyclic amide compound, which is an aggregate of monoamides connected by the interaction by hydrogen bonds, is connected via the cyclic amide compound.
チキソ剤が環状アミド化合物と非環状アミド化合物を含むフラックスを用いたソルダペーストでは、環状アミド化合物と非環状アミド化合物がネットワークを形成することで、チキソ性が付与されると考えられる。 In the solder paste using a flux in which the thixotropy contains a cyclic amide compound and a non-cyclic amide compound, it is considered that thixotropic property is imparted by forming a network of the cyclic amide compound and the acyclic amide compound.
しかし、環状アミド化合物と非環状アミド化合物の含有量が過少であると、十分なネットワークが形成できないため、チキソ性が付与されない。 However, if the contents of the cyclic amide compound and the non-cyclic amide compound are too small, a sufficient network cannot be formed, so that thixotropic property is not imparted.
一方、環状アミド化合物を含まない、または、環状アミド化合物の含有量が本発明で規定される量より少ないチキソ剤では、非環状アミド化合物が過剰になると、非環状アミド化合物の分子内、分子間で過度に相互作用してしまい、凝集・析出が発生しやすくなる。 On the other hand, in the case of a thixo agent which does not contain a cyclic amide compound or whose content of the cyclic amide compound is less than the amount specified in the present invention, when the acyclic amide compound becomes excessive, the non-cyclic amide compound is intramolecular or intermolecular. Excessively interacts with each other, and aggregation and precipitation are likely to occur.
これにより、フラックスとしてのレオロジー特性が損なわれる(結晶析出による印刷性が悪い)ことや、凝集体が形成されていない部分でチキソ剤密度が少なく、実質的に上記のようなチキソ剤不足の状態となり効果を発揮できなくなると考えられる。 As a result, the rheological characteristics of the flux are impaired (printability is poor due to crystal precipitation), and the thixotropic agent density is low in the portion where the aggregate is not formed, so that the thixotropic agent is substantially insufficient as described above. It is thought that it will not be effective.
これに対して、ジカルボン酸及び/またはトリカルボン酸と、ジアミン及び/またはトリアミンが環状に重縮合した環状アミド化合物と、モノカルボン酸、ジカルボン酸及び/またはトリカルボン酸と、モノアミン、ジアミン及び/またはトリアミンが非環状に縮合した非環状アミド化合物を、本発明で規定される含有量で併用することにより、環状アミド化合物で非環状アミド化合物を非共有結合性の相互作用にて架橋し、比較的均一なチキソ剤成分のネットワークを構築して、過度のチキソ剤析出を抑制することができる。この環状アミド化合物と非環状アミド化合物を併用することによる効果は、環状アミド化合物と非環状アミド化合物の含有量が本願発明で規定される範囲であれば、非環状アミド化合物の分子量が3000以下でも、3000超でも発揮される。 On the other hand, a cyclic amide compound obtained by cyclically polycondensing dicarboxylic acid and / or tricarboxylic acid, diamine and / or triamine, monocarboxylic acid, dicarboxylic acid and / or tricarboxylic acid, monoamine, diamine and / or triamine. By using the acyclic amide compound condensed in a non-cyclical manner at the content specified in the present invention, the acyclic amide compound is crosslinked with the cyclic amide compound by a non-covalent interaction, and is relatively uniform. It is possible to construct a network of various tide agent components and suppress excessive tide agent precipitation. The effect of using the cyclic amide compound and the acyclic amide compound in combination is as long as the content of the cyclic amide compound and the acyclic amide compound is within the range specified in the present invention, even if the molecular weight of the acyclic amide compound is 3000 or less. It can be demonstrated even over 3000.
また、非環状アミド化合物は、ジカルボン酸及び/またはトリカルボン酸のカルボキシル基の合計モル数と、ジアミン及び/またはトリアミンのアミノ基の合計モル数の比が1:1であれば、分子量が最大になる。これに対し、ジカルボン酸及び/またはトリカルボン酸のカルボキシル基の合計モル数と、ジアミン及び/またはトリアミンのアミノ基の合計モル数の比が1:mまたはm:1(m>1)であれば、分子量を小さくした非環状アミドオリゴマーとなる。好ましくは1:2〜2:1である。 Further, the acyclic amide compound has the maximum molecular weight when the ratio of the total number of moles of the carboxyl groups of the dicarboxylic acid and / or the tricarboxylic acid to the total number of moles of the amino groups of the diamine and / or the triamine is 1: 1. Become. On the other hand, if the ratio of the total number of moles of the carboxyl groups of the dicarboxylic acid and / or the tricarboxylic acid to the total number of moles of the amino groups of the diamine and / or the triamine is 1: m or m: 1 (m> 1). , It becomes an acyclic amide oligomer with a reduced molecular weight. It is preferably 1: 2 to 2: 1.
環状アミド化合物は、ジカルボン酸及びトリカルボン酸の炭素数が3以上10以下であり、ジカルボン酸及びトリカルボン酸の炭素数が6以上10以下であることがより好ましい。 The cyclic amide compound preferably has a dicarboxylic acid and a tricarboxylic acid having a carbon number of 3 or more and 10 or less, and the dicarboxylic acid and the tricarboxylic acid having a carbon number of 6 or more and 10 or less.
また、環状アミド化合物は、ジアミン及びトリアミンの炭素数が2以上54以下であり、ジアミン及びトリアミンの炭素数が6であることがより好ましい。 Further, the cyclic amide compound preferably has 2 or more and 54 or less carbon atoms of diamine and triamine, and 6 carbon atoms of diamine and triamine.
更に、非環状アミド化合物は、モノカルボン酸、ジカルボン酸及びトリカルボン酸の炭素数が2以上28以下であることが好ましく、モノカルボン酸、ジカルボン酸及びトリカルボン酸の炭素数は、より好ましくは2以上18以下、更に好ましくは2以上10以下、より更に好ましくは6以上10以下である。非環状アミド化合物は、モノアミン、ジアミン及びトリアミンの炭素数が0以上54以下であることが好ましく、モノアミン、ジアミン及びトリアミンの炭素数は、より好ましくは0以上18以下、更に好ましくは0以上10以下、より更に好ましくは6以上10以下である。 Further, the acyclic amide compound preferably has 2 or more and 28 or less carbon atoms of the monocarboxylic acid, dicarboxylic acid and tricarboxylic acid, and more preferably 2 or more carbon atoms of the monocarboxylic acid, dicarboxylic acid and tricarboxylic acid. It is 18 or less, more preferably 2 or more and 10 or less, and even more preferably 6 or more and 10 or less. The acyclic amide compound preferably has a monoamine, diamine, and triamine having 0 or more and 54 or less carbon atoms, and the monoamine, diamine, and triamine have more preferably 0 or more and 18 or less carbon atoms, and further preferably 0 or more and 10 or less carbon atoms. , More preferably 6 or more and 10 or less.
環状アミド化合物、非環状アミド化合物におけるジカルボン酸は、炭素数が6のアジピン酸、炭素数が10のセバシン酸等が挙げられる。 Examples of the dicarboxylic acid in the cyclic amide compound and the non-cyclic amide compound include adipic acid having 6 carbon atoms and sebacic acid having 10 carbon atoms.
また、環状アミド化合物、非環状アミド化合物におけるジカルボン酸は、炭素数3のマロン酸、炭素数4のコハク酸、炭素数5のグルタル酸、炭素数7のピメリン酸、炭素数8のスベリン酸、炭素数9のアゼライン酸、炭素数8のシクロヘキサンジカルボン酸等の脂肪族ジカルボン酸、及び、炭素数6のフタル酸、炭素数6のテレフタル酸等の芳香族ジカルボン酸が挙げられる。 The dicarboxylic acids in the cyclic amide compound and the non-cyclic amide compound are malonic acid having 3 carbon atoms, succinic acid having 4 carbon atoms, glutaric acid having 5 carbon atoms, pimelic acid having 7 carbon atoms, and suberic acid having 8 carbon atoms. Examples thereof include aliphatic dicarboxylic acids such as azelaic acid having 9 carbon atoms and cyclohexanedicarboxylic acid having 8 carbon atoms, and aromatic dicarboxylic acids such as phthalic acid having 6 carbon atoms and terephthalic acid having 6 carbon atoms.
更に、環状アミド化合物、非環状アミド化合物におけるトリカルボン酸は、炭素数9のシクロヘキサントリカルボン酸、炭素数9のベンゼントリカルボン酸等が挙げられる。 Further, examples of the tricarboxylic acid in the cyclic amide compound and the non-cyclic amide compound include cyclohexanetricarboxylic acid having 9 carbon atoms and benzenetricarboxylic acid having 9 carbon atoms.
また、非環状アミド化合物におけるモノカルボン酸は、炭素数2の酢酸、炭素数16のパルミチン酸、炭素数18のステアリン酸、炭素数18の12−ヒドロキシステアリン酸、炭素数22のベヘン酸、炭素数28のモンタン酸等が挙げられる。 The monocarboxylic acid in the acyclic amide compound is acetic acid having 2 carbon atoms, palmitic acid having 16 carbon atoms, stearic acid having 18 carbon atoms, 12-hydroxystearic acid having 18 carbon atoms, behenic acid having 22 carbon atoms, and carbon. The number 28, such as montanic acid, can be mentioned.
環状アミド化合物、非環状アミド化合物におけるジアミンは、1,6−ヘキサンジアミン等が挙げられる。 Examples of the diamine in the cyclic amide compound and the non-cyclic amide compound include 1,6-hexanediamine.
また、環状アミド化合物、非環状アミド化合物におけるジアミンは、炭素数2のエチレンジアミン、炭素数3の1,3−ジアミノプロパン、炭素数4の1,4−ジアミノブタン、炭素数36のダイマージアミン、炭素数6のフェニレンジアミン、炭素数8のメタキシリレンジアミン、炭素数8のパラキシリレンジアミン、炭素数8の2,4−ジアミノトルエン等が挙げられる。 The diamines in the cyclic amide compound and the non-cyclic amide compound are ethylene diamine having 2 carbon atoms, 1,3-diaminopropane having 3 carbon atoms, 1,4-diaminobutane having 4 carbon atoms, dimer diamine having 36 carbon atoms, and carbon. Examples thereof include phenylenediamine having a number of 6, metaxylylenediamine having 8 carbon atoms, paraxylylenediamine having 8 carbon atoms, and 2,4-diaminotoluene having 8 carbon atoms.
更に、環状アミド化合物、非環状アミド化合物におけるトリアミンは、炭素数6のトリアミノシクロヘキサン、炭素数54のトリマートリアミン等が挙げられる。 Further, examples of the triamine in the cyclic amide compound and the non-cyclic amide compound include triaminocyclohexane having 6 carbon atoms and trimer triamine having 54 carbon atoms.
また、非環状アミド化合物におけるモノアミンは、炭素数0のアンモニア、炭素数2のエチルアミン、炭素数6のヘキシルアミン、炭素数8のオクチルアミン、炭素数18のステアリルアミン等が挙げられる。 Examples of the monoamine in the acyclic amide compound include ammonia having 0 carbon atoms, ethylamine having 2 carbon atoms, hexylamine having 6 carbon atoms, octylamine having 8 carbon atoms, and stearylamine having 18 carbon atoms.
モノカルボン酸とモノアミンが縮合した[1+1]型の非環状アミド化合物としては、ステアリン酸アミド、p−トルアミド等が挙げられる。また、モノカルボン酸とジアミンが縮合した[1+1]型の非環状アミド化合物としては、エチレンジアミンモノステアリン酸アミド等が挙げられる。 Examples of the [1 + 1] type acyclic amide compound obtained by condensing a monocarboxylic acid and a monoamine include stearic acid amide and p-toluamide. Examples of the [1 + 1] type acyclic amide compound obtained by condensing a monocarboxylic acid and a diamine include ethylenediamine monostearic acid amide.
モノカルボン酸とジアミンが縮合した[2+1]型の非環状アミド化合物としては、エチレンジアミンビスステアリン酸アミド、エチレンジアミンビスパルミチン酸アミド、メタキシリレンジアミンビスステアリン酸アミド等が挙げられる。 Examples of the [2 + 1] type acyclic amide compound obtained by condensing a monocarboxylic acid and a diamine include ethylenediamine bisstearic acid amide, ethylenediamine bispalmitic acid amide, and metaxylylenediamine bisstearic acid amide.
ジカルボン酸とモノアミンが縮合した[1+2]型の非環状アミド化合物としては、コハク酸ビスステアリルアミド、アジピン酸ビスステアリルアミド、セバシン酸ビスステアリルアミド等が挙げられる。 Examples of the [1 + 2] type acyclic amide compound obtained by condensing a dicarboxylic acid and a monoamine include succinic acid bisstearylamide, adipic acid bisstearylamide, and sebacic acid bisstearylamide.
なお、非環状アミド化合物は、ラクタムを開環重合したものでも置換でき、例えば、ε−カプロラクタムを開環重合した6−ナイロン、ラウリルラクタムを開環重合した12−ナイロン等が挙げられる。 The acyclic amide compound can be substituted by ring-opening polymerization of lactam, and examples thereof include 6-nylon obtained by ring-opening polymerization of ε-caprolactam and 12-nylon obtained by ring-opening polymerization of lauryl lactam.
本実施の形態のフラックスは、チキソ剤として上述した環状アミド化合物を0.1wt%以上8.0wt%以下、より好ましくは、環状アミド化合物を0.5wt%以上1.5wt%以下、非環状アミド化合物を0.5wt%以上8.0wt%以下、より好ましくは、非環状アミド化合物を0.5wt%以上4.0wt%以下含み、かつ、環状アミド化合物と非環状アミド化合物の合計が1.5wt%以上10.0wt%以下である。 The flux of the present embodiment contains the above-mentioned cyclic amide compound as a thixo agent in an amount of 0.1 wt% or more and 8.0 wt% or less, more preferably 0.5 wt% or more and 1.5 wt% or less in an acyclic amide compound. The compound is 0.5 wt% or more and 8.0 wt% or less, more preferably 0.5 wt% or more and 4.0 wt% or less of the acyclic amide compound, and the total of the cyclic amide compound and the acyclic amide compound is 1.5 wt%. % Or more and 10.0 wt% or less.
環状アミド化合物の量が0.1wt%未満であると、チキソ性が悪くなる。また、印刷ダレ、加熱ダレを抑制できない。一方、環状アミド化合物の量が8.0wt%超であると、アミド系チキソ剤の合計量が多くなることで、フラックス中で析出が発生し、印刷性が悪くなる。環状アミド化合物の量が0.1wt%であっても、環状アミド化合物と非環状アミド化合物の合計が1.5wt%未満であると、チキソ性が悪くなる。また、印刷ダレ、加熱ダレを抑制できない。なお、環状アミド化合物の量が0.1wt%未満であっても、非環状アミド化合物の含有量が増加すると、チキソ性、印刷ダレ、加熱ダレが改善するが、フラックス中で析出が発生し、印刷性が悪くなる。 If the amount of the cyclic amide compound is less than 0.1 wt%, the thixotropic property deteriorates. In addition, printing sagging and heating sagging cannot be suppressed. On the other hand, when the amount of the cyclic amide compound is more than 8.0 wt%, the total amount of the amide thixotropy increases, so that precipitation occurs in the flux and the printability deteriorates. Even if the amount of the cyclic amide compound is 0.1 wt%, if the total of the cyclic amide compound and the non-cyclic amide compound is less than 1.5 wt%, the thixotropic property deteriorates. In addition, printing sagging and heating sagging cannot be suppressed. Even if the amount of the cyclic amide compound is less than 0.1 wt%, if the content of the non-cyclic amide compound increases, thixotropic property, printing sagging, and heating sagging are improved, but precipitation occurs in the flux, and precipitation occurs. Printability deteriorates.
また、本実施の形態のフラックスは、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の何れか、あるいは、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の2種以上を0.5wt%以上20wt%以下含む。ダイマー酸及びトリマー酸は、はんだ付けで想定される温度域での耐熱性を有し、はんだ付け時に活性剤として機能する。ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の何れか、あるいは、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の2種以上の含有量が0.5wt%未満であると、はんだの濡れ広がり性、はんだの濡れ不良(ディウェット)の抑制能が悪くなる。 Further, the flux of the present embodiment is any one of dimer acid, hydrogenated dimer acid, trimer acid and hydrogenated trimer acid, or two or more kinds of dimer acid, hydrogenated dimer acid, trimer acid and hydrogenated trimer acid. Is included in an amount of 0.5 wt% or more and 20 wt% or less. Dimeric acid and trimer acid have heat resistance in the temperature range expected in soldering and function as activators during soldering. The content of any one of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, or two or more of dimer acid, hydrogenated dimer acid, trimer acid and hydrogenated trimer acid is less than 0.5 wt%. If there is, the wettability of the solder and the ability to suppress poor wettability (dewetting) of the solder are deteriorated.
ダイマー酸、トリマー酸は、オレイン酸とリノール酸の反応物であるダイマー酸、オレイン酸とリノール酸の反応物であるトリマー酸、アクリル酸の反応物であるダイマー酸、アクリル酸の反応物であるトリマー酸、メタクリル酸の反応物であるダイマー酸、メタクリル酸の反応物であるトリマー酸、アクリル酸とメタクリル酸の反応物であるダイマー酸、アクリル酸とメタクリル酸の反応物であるトリマー酸、オレイン酸の反応物であるダイマー酸、オレイン酸の反応物であるトリマー酸、リノール酸の反応物であるダイマー酸、リノール酸の反応物であるトリマー酸、 リノレン酸の反応物であるダイマー酸、リノレン酸の反応物であるトリマー酸、アクリル酸とオレイン酸の反応物であるダイマー酸、アクリル酸とオレイン酸の反応物であるトリマー酸、アクリル酸とリノール酸の反応物であるダイマー酸、アクリル酸とリノール酸の反応物であるトリマー酸、アクリル酸とリノレン酸の反応物であるダイマー酸、アクリル酸とリノレン酸の反応物であるトリマー酸、メタクリル酸とオレイン酸の反応物であるダイマー酸、メタクリル酸とオレイン酸の反応物であるトリマー酸、メタクリル酸とリノール酸の反応物であるダイマー酸、メタクリル酸とリノール酸の反応物であるトリマー酸、メタクリル酸とリノレン酸の反応物であるダイマー酸、メタクリル酸とリノレン酸の反応物であるトリマー酸、オレイン酸とリノレン酸の反応物であるダイマー酸、オレイン酸とリノレン酸の反応物であるトリマー酸、リノール酸とリノレン酸の反応物であるダイマー酸、リノール酸とリノレン酸の反応物であるトリマー酸、上述した各ダイマー酸の水添物である水添ダイマー酸、上述した各トリマー酸の水添物である水添トリマー酸等が挙げられる。例えば、オレイン酸とリノール酸の反応物であるダイマー酸は、炭素数が36の2量体である。また、オレイン酸とリノール酸の反応物であるトリマー酸は、炭素数が54の3量体である。 Dimeric acid and trimeric acid are reactants of dimeric acid, which is a reaction product of oleic acid and linoleic acid, trimeric acid, which is a reaction product of oleic acid and linoleic acid, dimer acid, which is a reaction product of acrylic acid, and acrylic acid. Trimmer acid, dimer acid which is a reaction product of methacrylic acid, trimer acid which is a reaction product of methacrylic acid, dimer acid which is a reaction product of acrylic acid and methacrylic acid, trimer acid which is a reaction product of acrylic acid and methacrylic acid, oleic acid Dimeric acid, which is a reaction product of acid, trimeric acid, which is a reaction product of oleic acid, dimer acid, which is a reaction product of linoleic acid, trimeric acid, which is a reaction product of linoleic acid, and dimer acid, linolene, which is a reaction product of linolenic acid. Trimmer acid, which is a reaction product of acid, dimer acid, which is a reaction product of acrylic acid and oleic acid, trimer acid, which is a reaction product of acrylic acid and oleic acid, dimer acid, which is a reaction product of acrylic acid and linoleic acid, acrylic acid. Trimmer acid, which is a reaction product of and linoleic acid, dimer acid, which is a reaction product of acrylic acid and linolenic acid, trimer acid, which is a reaction product of acrylic acid and linolenic acid, and dimer acid, which is a reaction product of methacrylic acid and oleic acid. Trimmer acid, which is a reaction product of methacrylic acid and oleic acid, dimer acid, which is a reaction product of methacrylic acid and linoleic acid, trimer acid, which is a reaction product of methacrylic acid and linoleic acid, and dimer, which is a reaction product of methacrylic acid and linolenic acid. Acid, trimeric acid, which is a reaction product of methacrylic acid and linolenic acid, dimer acid, which is a reaction product of oleic acid and linolenic acid, trimeric acid, which is a reaction product of oleic acid and linolenic acid, and reaction product of linoleic acid and linolenic acid. Certain dimeric acid, trimeric acid which is a reaction product of linoleic acid and linolenic acid, hydrogenated dimeric acid which is a hydrogenated product of each of the above-mentioned dimeric acids, and hydrogenated trimeric acid which is a hydrogenated product of each of the above-mentioned trimeric acids. Can be mentioned. For example, dimeric acid, which is a reaction product of oleic acid and linoleic acid, is a dimer having 36 carbon atoms. Further, trimeric acid, which is a reaction product of oleic acid and linoleic acid, is a trimer having 54 carbon atoms.
また、本実施の形態のフラックスは、ロジンを30wt%以上60wt%以下、より好ましくは、ロジンを35wt%以上60wt%以下含む。 The flux of the present embodiment contains rosin in an amount of 30 wt% or more and 60 wt% or less, more preferably rosin in an amount of 35 wt% or more and 60 wt% or less.
本実施の形態のフラックスは、さらに、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸以外の他の有機酸、アミン、ハロゲンを含んでも良く、他の有機酸を0wt%以上10wt%以下、より好ましくは、他の有機酸を0.2wt%以上5wt%以下、アミンを0wt%以上20wt%以下、より好ましくは、アミンを0wt%以上5wt%以下、ハロゲンとして有機ハロゲン化合物を0wt%以上5wt%以下、アミンハロゲン化水素酸塩を0wt%以上2wt%以下含む。 The flux of the present embodiment may further contain organic acids other than dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, amines, and halogens, and contains 0 wt% or more and 10 wt% of other organic acids. Hereinafter, more preferably, other organic acids are 0.2 wt% or more and 5 wt% or less, amines are 0 wt% or more and 20 wt% or less, more preferably amines are 0 wt% or more and 5 wt% or less, and organic halogen compounds are 0 wt% as halogens. It contains 5 wt% or more and 0 wt% or more and 2 wt% or less of amine hydrohalide.
本実施の形態のフラックスは、チキソ剤としてエステル化合物を含んでも良く、エステル化合物を0wt%以上8.0wt%以下、より好ましくは、エステル化合物を0wt%以上4.0wt%以下含む。 The flux of the present embodiment may contain an ester compound as a thixotropic agent, and contains 0 wt% or more and 8.0 wt% or less of the ester compound, and more preferably 0 wt% or more and 4.0 wt% or less of the ester compound.
本実施の形態のフラックスは、さらに、酸化防止剤を含んでも良く、酸化防止剤を0wt%以上5wt%以下含む。本実施の形態のフラックスは、残部が溶剤である。 The flux of the present embodiment may further contain an antioxidant, and contains 0 wt% or more and 5 wt% or less of the antioxidant. The balance of the flux of the present embodiment is a solvent.
ロジンとしては、例えば、ガムロジン、ウッドロジン及びトール油ロジン等の原料ロジン、並びに該原料ロジンから得られる誘導体が挙げられる。該誘導体としては、例えば、精製ロジン、水添ロジン、不均化ロジン、重合ロジン、酸変性ロジン、フェノール変性ロジン及びα,β不飽和カルボン酸変性物(アクリル化ロジン、マレイン化ロジン、フマル化ロジン等)、並びに該重合ロジンの精製物、水素化物及び不均化物、並びに該α,β不飽和カルボン酸変性物の精製物、水素化物及び不均化物等が挙げられ、これらの1種または2種以上を使用することができる。 Examples of the rosin include raw material rosins such as gum rosin, wood rosin and tall oil rosin, and derivatives obtained from the raw material rosin. Examples of the derivative include purified rosin, hydrogenated rosin, disproportionated rosin, polymerized rosin, acid-modified rosin, phenol-modified rosin and α, β-unsaturated carboxylic acid-modified products (acrylicized rosin, maleated rosin, and fumarized products). (Rosin, etc.), and purified products, hydrides and disproportionated products of the polymerized rosin, and purified products, hydrides and disproportionated products of the α, β unsaturated carboxylic acid modified products, and one of them or Two or more types can be used.
他の有機酸としては、グルタル酸、アジピン酸、アゼライン酸、エイコサン二酸、クエン酸、グリコール酸、コハク酸、サリチル酸、ジグリコール酸、ジピコリン酸、ジブチルアニリンジグリコール酸、スベリン酸、セバシン酸、チオグリコール酸、テレフタル酸、ドデカン二酸、パラヒドロキシフェニル酢酸、ピコリン酸、フェニルコハク酸、フタル酸、フマル酸、マレイン酸、マロン酸、ラウリン酸、安息香酸、酒石酸、イソシアヌル酸トリス(2−カルボキシエチル)、グリシン、1,3−シクロヘキサンジカルボン酸、2,2−ビス(ヒドロキシメチル)プロピオン酸、2,2−ビス(ヒドロキシメチル)ブタン酸、2,3−ジヒドロキシ安息香酸、2,4−ジエチルグルタル酸、2−キノリンカルボン酸、3−ヒドロキシ安息香酸、リンゴ酸、p−アニス酸、ステアリン酸、12−ヒドロキシステアリン酸、オレイン酸、リノール酸、リノレン酸等が挙げられる。 Other organic acids include glutaric acid, adipic acid, azelaic acid, eikosandioic acid, citric acid, glycolic acid, succinic acid, salicylic acid, diglycolic acid, dipicolinic acid, dibutylaniline diglycolic acid, suberic acid, sebacic acid, Thioglycolic acid, terephthalic acid, dodecanedioic acid, parahydroxyphenylacetic acid, picolinic acid, phenylsuccinic acid, phthalic acid, fumaric acid, maleic acid, malonic acid, lauric acid, benzoic acid, tartaric acid, tris isocyanurate (2-carboxy) Ethyl), glycine, 1,3-cyclohexanedicarboxylic acid, 2,2-bis (hydroxymethyl) propionic acid, 2,2-bis (hydroxymethyl) butanoic acid, 2,3-dihydroxybenzoic acid, 2,4-diethyl Examples thereof include glutaric acid, 2-quinolincarboxylic acid, 3-hydroxybenzoic acid, malic acid, p-anisic acid, stearic acid, 12-hydroxystearic acid, oleic acid, linoleic acid and linolenic acid.
アミンとしては、モノエタノールアミン、ジフェニルグアニジン、エチルアミン、トリエチルアミン、エチレンジアミン、トリエチレンテトラミン、2−メチルイミダゾール、2−ウンデシルイミダゾール、2−ヘプタデシルイミダゾール、1,2−ジメチルイミダゾール、2−エチル−4−メチルイミダゾール、2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール、1−ベンジル−2−メチルイミダゾール、1−ベンジル−2−フェニルイミダゾール、1−シアノエチル−2−メチルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾール、1−シアノエチル−2−エチル−4−メチルイミダゾール、1−シアノエチル−2−フェニルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾリウムトリメリテイト、1−シアノエチル−2−フェニルイミダゾリウムトリメリテイト、2,4−ジアミノ−6−[2′−メチルイミダゾリル−(1′)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2′−ウンデシルイミダゾリル−(1′)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2′−エチル−4′−メチルイミダゾリル−(1′)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2′−メチルイミダゾリル−(1′)]−エチル−s−トリアジンイソシアヌル酸付加物、2−フェニルイミダゾールイソシアヌル酸付加物、2−フェニル−4,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール、2,3−ジヒドロ−1H−ピロロ[1,2−a]ベンズイミダゾール、1−ドデシル−2−メチル−3−ベンジルイミダゾリウムクロライド、2−メチルイミダゾリン、2−フェニルイミダゾリン、2,4−ジアミノ−6−ビニル−s−トリアジン、2,4−ジアミノ−6−ビニル−s−トリアジンイソシアヌル酸付加物、2,4−ジアミノ−6−メタクリロイルオキシエチル−s−トリアジン、エポキシ−イミダゾールアダクト、2−メチルベンゾイミダゾール、2−オクチルベンゾイミダゾール、2−ペンチルベンゾイミダゾール、2−(1−エチルペンチル)ベンゾイミダゾール、2−ノニルベンゾイミダゾール、2−(4−チアゾリル)ベンゾイミダゾール、ベンゾイミダゾール、2−(2′−ヒドロキシ−5′−メチルフェニル)ベンゾトリアゾール、2−(2′−ヒドロキシ−3′−tert−ブチル−5′−メチルフェニル)−5−クロロベンゾトリアゾール、2−(2′−ヒドロキシ−3′,5′−ジ−tert−アミルフェニル)ベンゾトリアゾール、2−(2′−ヒドロキシ−5′−tert−オクチルフェニル)ベンゾトリアゾール、2,2′−メチレンビス[6−(2H−ベンゾトリアゾール−2−イル)−4−tert−オクチルフェノール]、6−(2−ベンゾトリアゾリル)−4−tert−オクチル−6′−tert−ブチル−4′−メチル−2,2′−メチレンビスフェノール、1,2,3−ベンゾトリアゾール、1−[N,N−ビス(2−エチルヘキシル)アミノメチル]ベンゾトリアゾール、カルボキシベンゾトリアゾール、1−[N,N−ビス(2−エチルヘキシル)アミノメチル]メチルベンゾトリアゾール、2,2′−[[(メチル−1H−ベンゾトリアゾール−1−イル)メチル]イミノ]ビスエタノール、1−(1′,2′−ジカルボキシエチル)ベンゾトリアゾール、1−(2,3−ジカルボキシプロピル)ベンゾトリアゾール、1−[(2−エチルヘキシルアミノ)メチル]ベンゾトリアゾール、2,6−ビス[(1H−ベンゾトリアゾール−1−イル)メチル]−4−メチルフェノール、5−メチルベンゾトリアゾール、5−フェニルテトラゾール等が挙げられる。 Examples of amines include monoethanolamine, diphenylguanidine, ethylamine, triethylamine, ethylenediamine, triethylenetetramine, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4. -Methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2 − Undecyl imidazole, 1-cyanoethyl-2-ethyl-4-methyl imidazole, 1-cyanoethyl-2-phenyl imidazole, 1-cyanoethyl-2-undecyl imidazolium trimerite, 1-cyanoethyl-2-phenyl imidazolium Trimeritate, 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-undecylimidazolyl- (1') )]-Ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6- [ 2'-methylimidazolyl- (1')] -ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl -5-Hydroxymethylimidazole, 2,3-dihydro-1H-pyrrolo [1,2-a] benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline , 2,4-Diamino-6-vinyl-s-triazine, 2,4-diamino-6-vinyl-s-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-s-triazine, epoxy -Imidazole adduct, 2-methylbenzoimidazole, 2-octylbenzoimidazole, 2-pentylbenzoimidazole, 2- (1-ethylpentyl) benzoimidazole, 2-nonylbenzoimidazole, 2- (4-thiazolyl) benzoimidazole, benzo Imidazole, 2- (2'-hydroxy-5'-methylphenyl) benzotriazole, 2- (2'-hydroxy-3'-tert- Butyl-5'-methylphenyl) -5-chlorobenzotriazole, 2- (2'-hydroxy-3', 5'-di-tert-amylphenyl) benzotriazole, 2- (2'-hydroxy-5'- tert-octylphenyl) benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazole-2-yl) -4-tert-octylphenol], 6- (2-benzotriazolyl) -4-tert- Octyl-6'-tert-butyl-4'-methyl-2,2'-methylenebisphenol, 1,2,3-benzotriazole, 1- [N, N-bis (2-ethylhexyl) aminomethyl] benzotriazole, Carboxybenzotriazole, 1- [N, N-bis (2-ethylhexyl) aminomethyl] methylbenzotriazole, 2,2'-[[(methyl-1H-benzotriazole-1-yl) methyl] imino] bisethanol, 1- (1', 2'-dicarboxyethyl) benzotriazole, 1- (2,3-dicarboxypropyl) benzotriazole, 1-[(2-ethylhexylamino) methyl] benzotriazole, 2,6-bis [ (1H-benzotriazole-1-yl) methyl] -4-methylphenol, 5-methylbenzotriazole, 5-phenyltetrazole and the like can be mentioned.
有機ハロゲン化合物としては、trans−2,3−ジブロモ−1,4−ブテンジオール、トリアリルイソシアヌレート6臭化物、1−ブロモ−2−ブタノール、1−ブロモ−2−プロパノール、3−ブロモ−1−プロパノール、3−ブロモ−1,2−プロパンジオール、1,4−ジブロモ−2−ブタノール、1,3−ジブロモ−2−プロパノール、2,3−ジブロモ−1−プロパノール、2,3−ジブロモ−1,4−ブタンジオール、2,3−ジブロモ−2−ブテン−1,4−ジオール等が挙げられる。 Examples of the organic halogen compound include trans-2,3-dibromo-1,4-butenediol, triallyl isocyanurate hexabromide, 1-bromo-2-butanol, 1-bromo-2-propanol and 3-bromo-1-. Propanol, 3-bromo-1,2-propanediol, 1,4-dibromo-2-butanol, 1,3-dibromo-2-propanol, 2,3-dibromo-1-propanol, 2,3-dibromo-1 , 4-Butandiol, 2,3-dibromo-2-butene-1,4-diol and the like.
アミンハロゲン化水素酸塩は、アミンとハロゲン化水素を反応させた化合物であり、アニリン塩化水素、アニリン臭化水素等が挙げられる。アミンハロゲン化水素酸塩のアミンとしては、上述したアミンを用いることができ、エチルアミン、エチレンジアミン、トリエチルアミン、メチルイミダゾール、2−エチル−4−メチルイミダゾール等が挙げられ、ハロゲン化水素としては、塩素、臭素、ヨウ素、フッ素の水素化物(塩化水素、臭化水素、ヨウ化水素、フッ化水素)が挙げられる。また、アミンハロゲン化水素酸塩に代えて、あるいはアミンハロゲン化水素酸塩と合わせてホウフッ化物を含んでも良く、ホウフッ化物としてホウフッ化水素酸等が挙げられる。 The amine hydrogen halide is a compound obtained by reacting an amine with hydrogen halide, and examples thereof include aniline hydrogen chloride and aniline hydrogen bromide. As the amine of the amine halogenated hydride, the above-mentioned amine can be used, and examples thereof include ethylamine, ethylenediamine, triethylamine, methylimidazole, 2-ethyl-4-methylimidazole, and the hydrogen halide includes chlorine. Examples thereof include bromine, iodine, and hydrides of fluorine (hydrogen chloride, hydrogen bromide, hydrogen iodide, hydrogen fluoride). Further, borofluoride may be contained in place of the amine hydrohalide or in combination with the amine halide hydride, and examples of the borofluoride include borofluoric acid.
溶剤としては、水、アルコール系溶剤、グリコールエーテル系溶剤、テルピネオール類等が挙げられる。アルコール系溶剤としてはイソプロピルアルコール、1,2−ブタンジオール、イソボルニルシクロヘキサノール、2,4−ジエチル−1,5−ペンタンジオール、2,2−ジメチル−1,3−プロパンジオール、2,5−ジメチル−2,5−ヘキサンジオール、2,5−ジメチル−3−ヘキシン−2,5−ジオール、2,3−ジメチル−2,3−ブタンジオール、1,1,1−トリス(ヒドロキシメチル)エタン、2−エチル−2−ヒドロキシメチル−1,3−プロパンジオール、2,2′−オキシビス(メチレン)ビス(2−エチル−1,3−プロパンジオール)、2,2−ビス(ヒドロキシメチル)−1,3−プロパンジオール、1,2,6−トリヒドロキシヘキサン、ビス[2,2,2−トリス(ヒドロキシメチル)エチル]エーテル、1−エチニル−1−シクロヘキサノール、1,4−シクロヘキサンジオール、1,4−シクロヘキサンジメタノール、エリトリトール、トレイトール、グアヤコールグリセロールエーテル、3,6−ジメチル−4−オクチン−3,6−ジオール、2,4,7,9−テトラメチル−5−デシン−4,7−ジオール等が挙げられる。グリコールエーテル系溶剤としては、ヘキシルジグリコール、ジエチレングリコールモノ−2−エチルヘキシルエーテル、エチレングリコールモノフェニルエーテル、2−メチルペンタン−2,4−ジオール、ジエチレングリコールジブチルエーテル、トリエチレングリコールモノブチルエーテル等が挙げられる。チキソ剤としてのエステル化合物としては、ヒマシ硬化油が挙げられる。酸化防止剤としては、ヒンダードフェノール系酸化防止剤等が挙げられる。 Examples of the solvent include water, alcohol solvents, glycol ether solvents, terpineols and the like. As alcohol-based solvents, isopropyl alcohol, 1,2-butanediol, isobornylcyclohexanol, 2,4-diethyl-1,5-pentanediol, 2,2-dimethyl-1,3-propanediol, 2,5 -Diol-2,5-hexanediol, 2,5-dimethyl-3-hexine-2,5-diol, 2,3-dimethyl-2,3-butanediol, 1,1,1-tris (hydroxymethyl) Ethan, 2-ethyl-2-hydroxymethyl-1,3-propanediol, 2,2'-oxybis (methylene) bis (2-ethyl-1,3-propanediol), 2,2-bis (hydroxymethyl) -1,3-propanediol, 1,2,6-trihydroxyhexane, bis [2,2,2-tris (hydroxymethyl) ethyl] ether, 1-ethynyl-1-cyclohexanol, 1,4-cyclohexanediol , 1,4-Cyclohexanedimethanol, erythritol, treitol, guayacol glycerol ether, 3,6-dimethyl-4-octin-3,6-diol, 2,4,7,9-tetramethyl-5-decine-4 , 7-diol and the like. Examples of the glycol ether solvent include hexyl diglycol, diethylene glycol mono-2-ethylhexyl ether, ethylene glycol monophenyl ether, 2-methylpentane-2,4-diol, diethylene glycol dibutyl ether, and triethylene glycol monobutyl ether. Examples of the ester compound as a thixotropy include hydrogenated castor oil. Examples of the antioxidant include a hindered phenolic antioxidant and the like.
<本実施の形態のソルダペーストの一例>
本実施の形態のソルダペーストは、上述したフラックスと、金属粉を含む。金属粉は、Sn単体のはんだの粉体、または、Sn−Ag系、Sn−Cu系、Sn−Ag−Cu系、Sn−Bi系、Sn-In系等、あるいは、これらの合金にSb、Bi、In、Cu、Zn、As、Ag、Cd、Fe、Ni、Co、Au、Ge、P、Pb等を添加したはんだ合金の粉体で構成される。
<Example of solder paste of this embodiment>
The solder paste of the present embodiment contains the above-mentioned flux and metal powder. The metal powder is a solder powder of Sn alone, Sn-Ag type, Sn-Cu type, Sn-Ag-Cu type, Sn-Bi type, Sn-In type, etc., or Sb, an alloy thereof. It is composed of a powder of a solder alloy to which Bi, In, Cu, Zn, As, Ag, Cd, Fe, Ni, Co, Au, Ge, P, Pb and the like are added.
はんだ合金は、As:25質量ppm以上300質量ppm以下、並びにSb:0質量ppm超3000質量ppm以下、Bi:0質量ppm超10000質量ppm以下、及びPb:0質量ppm超5100質量ppm以下の少なくとも1種、並びに残部がSnからなる合金組成を有することが好ましい。はんだ合金は、Ag:0質量%以上4質量%以下及びCu:0質量%以上0.9質量%以下の少なくとも1種を更に含有していてもよい。 The solder alloy has As: 25 mass ppm or more and 300 mass ppm or less, Sb: 0 mass ppm or more and 3000 mass ppm or less, Bi: 0 mass ppm or more and 10000 mass ppm or less, and Pb: 0 mass ppm or more and 5100 mass ppm or less. It is preferable to have an alloy composition of at least one type and the balance of Sn. The solder alloy may further contain at least one of Ag: 0% by mass or more and 4% by mass or less and Cu: 0% by mass or more and 0.9% by mass or less.
Asは、ソルダペーストの粘度の経時変化を抑制することができる元素である。Asは、フラックスとの反応性が低く、またSnに対して貴な元素であるために増粘抑制効果を発揮することができると推察される。As含有量の下限は、例えば25質量ppm以上であり、好ましくは50質量ppm以上であり、より好ましくは100質量ppm以上である。一方、Asが多すぎるとはんだ合金の濡れ性が劣化する。As含有量の上限は、例えば300質量ppm以下であり、好ましくは250質量ppm以下であり、より好ましくは200質量ppm以下である。 As is an element capable of suppressing the change in viscosity of the solder paste with time. It is presumed that As has low reactivity with flux and is a noble element for Sn, so that it can exert an effect of suppressing thickening. The lower limit of the As content is, for example, 25 mass ppm or more, preferably 50 mass ppm or more, and more preferably 100 mass ppm or more. On the other hand, if the amount of As is too large, the wettability of the solder alloy deteriorates. The upper limit of the As content is, for example, 300 mass ppm or less, preferably 250 mass ppm or less, and more preferably 200 mass ppm or less.
Sbは、フラックスとの反応性が低く増粘抑制効果を示す元素である。はんだ合金がSbを含有する場合、Sb含有量の下限は、例えば0質量ppm超であり、好ましくは25質量ppm以上であり、より好ましくは50質量ppm以上であり、さらに好ましくは100質量ppm以上であり、特に好ましくは300質量ppm以上である。一方、Sb含有量が多すぎると、濡れ性が劣化するため、適度な含有量にする必要がある。Sb含有量の上限は、例えば3000質量ppm以下であり、好ましくは1150質量ppm以下であり、より好ましくは500質量ppm以下である。 Sb is an element that has low reactivity with flux and exhibits an effect of suppressing thickening. When the solder alloy contains Sb, the lower limit of the Sb content is, for example, more than 0 mass ppm, preferably 25 mass ppm or more, more preferably 50 mass ppm or more, still more preferably 100 mass ppm or more. It is particularly preferably 300 mass ppm or more. On the other hand, if the Sb content is too large, the wettability deteriorates, so it is necessary to set the content to an appropriate level. The upper limit of the Sb content is, for example, 3000 mass ppm or less, preferably 1150 mass ppm or less, and more preferably 500 mass ppm or less.
Bi及びPbは、Sbと同様に、フラックスとの反応性が低く増粘抑制効果を示す元素である。また、Bi及びPbは、はんだ合金の液相線温度を下げるとともに溶融はんだの粘性を低減させるため、Asによる濡れ性の劣化を抑えることができる元素である。 Like Sb, Bi and Pb are elements that have low reactivity with flux and exhibit an effect of suppressing thickening. Further, Bi and Pb are elements that can suppress deterioration of wettability due to As because the liquidus temperature of the solder alloy is lowered and the viscosity of the molten solder is reduced.
Sb、Bi及びPbの少なくとも1元素が存在すれば、Asによる濡れ性の劣化を抑えることができる。はんだ合金がBiを含有する場合、Bi含有量の下限は、例えば0質量ppm超であり、好ましくは25質量ppm以上であり、より好ましくは50質量ppm以上であり、さらに好ましくは75質量ppm以上であり、特に好ましくは100質量ppm以上であり、最も好ましくは250質量ppm以上である。はんだ合金がPbを含有する場合、Pb含有量の下限は0質量ppm超であり、好ましくは25質量ppm以上であり、より好ましくは50質量ppm以上であり、さらに好ましくは75質量ppm以上であり、特に好ましくは100質量ppm以上であり、最も好ましくは250質量ppm以上である。 If at least one element of Sb, Bi and Pb is present, deterioration of wettability due to As can be suppressed. When the solder alloy contains Bi, the lower limit of the Bi content is, for example, more than 0 mass ppm, preferably 25 mass ppm or more, more preferably 50 mass ppm or more, still more preferably 75 mass ppm or more. It is particularly preferably 100 mass ppm or more, and most preferably 250 mass ppm or more. When the solder alloy contains Pb, the lower limit of the Pb content is more than 0 mass ppm, preferably 25 mass ppm or more, more preferably 50 mass ppm or more, and further preferably 75 mass ppm or more. , Especially preferably 100 mass ppm or more, and most preferably 250 mass ppm or more.
一方、これらの元素の含有量が多すぎると、固相線温度が著しく低下するため、液相線温度と固相線温度との温度差であるΔTが広くなりすぎる。ΔTが広すぎると、溶融はんだの凝固過程において、BiやPbの含有量が少ない高融点の結晶相が析出するために液相のBiやPbが濃縮される。その後、さらに溶融はんだの温度が低下すると、BiやPbの濃度が高い低融点の結晶相が偏析してしまう。このため、はんだ合金の機械的強度等が劣化し、信頼性が劣ることになる。特に、Bi濃度が高い結晶相は硬くて脆いため、はんだ合金中で偏析すると信頼性が著しく低下する。 On the other hand, if the content of these elements is too large, the solidus temperature is remarkably lowered, so that ΔT, which is the temperature difference between the liquidus temperature and the solidus temperature, becomes too wide. If ΔT is too wide, the liquid phase Bi and Pb will be concentrated because a high melting point crystal phase having a low content of Bi and Pb is precipitated in the solidification process of the molten solder. After that, when the temperature of the molten solder is further lowered, the low melting point crystal phase having a high concentration of Bi and Pb is segregated. Therefore, the mechanical strength and the like of the solder alloy are deteriorated, and the reliability is deteriorated. In particular, since the crystal phase having a high Bi concentration is hard and brittle, segregation in the solder alloy significantly lowers the reliability.
このような観点から、はんだ合金がBiを含有する場合、Bi含有量の上限は、例えば10000質量ppm以下であり、好ましくは1000質量ppm以下であり、より好ましくは600質量ppm以下であり、さらに好ましくは500質量ppm以下である。はんだ合金がPbを含有する場合、Pb含有量の上限は、例えば5100質量ppm以下であり、好ましくは5000質量ppm以下であり、より好ましくは1000質量ppm以下であり、さらに好ましくは850質量ppm以下であり、特に好ましくは500質量ppm以下である。 From this point of view, when the solder alloy contains Bi, the upper limit of the Bi content is, for example, 10000 mass ppm or less, preferably 1000 mass ppm or less, more preferably 600 mass ppm or less, and further. It is preferably 500 mass ppm or less. When the solder alloy contains Pb, the upper limit of the Pb content is, for example, 5100 mass ppm or less, preferably 5000 mass ppm or less, more preferably 1000 mass ppm or less, and further preferably 850 mass ppm or less. It is particularly preferably 500 mass ppm or less.
はんだ合金は、下記の数(1)式を満たすことが好ましい。 The solder alloy preferably satisfies the following equation (1).
275≦2As+Sb+Bi+Pb・・・(1)
上記の数(1)式中、As、Sb、Bi、及びPbは各々合金組成での含有量(質量ppm)を表す。
275≤2As + Sb + Bi + Pb ... (1)
In the above formula (1), As, Sb, Bi, and Pb each represent the content (mass ppm) in the alloy composition.
As、Sb、Bi及びPbは、いずれも増粘抑制効果を示す元素である。これらの合計が275質量ppm以上であることが好ましい。数(1)式中、As含有量を2倍にしたのは、AsがSbやBiやPbと比較して増粘抑制効果が高いためである。 As, Sb, Bi and Pb are all elements that have an effect of suppressing thickening. The total of these is preferably 275 mass ppm or more. The reason why the As content is doubled in the formula (1) is that As has a higher effect of suppressing thickening than Sb, Bi and Pb.
数(1)式の下限は、好ましくは350以上であり、より好ましくは1200以上である。一方、(1)の上限は、増粘抑制効果の観点では特に限定されることはないが、ΔTを適した範囲にする観点から、好ましくは25200以下であり、より好ましくは10200以下であり、さらに好ましくは5300以下であり、特に好ましくは3800以下である。 The lower limit of the equation (1) is preferably 350 or more, more preferably 1200 or more. On the other hand, the upper limit of (1) is not particularly limited from the viewpoint of the thickening suppressing effect, but is preferably 25200 or less, more preferably 10200 or less, from the viewpoint of setting ΔT in a suitable range. It is more preferably 5300 or less, and particularly preferably 3800 or less.
上記好ましい態様の中から上限及び下限を適宜選択したものが、下記の数(1a)式及び数(1b)式である。 The following equations (1a) and (1b) are those in which the upper limit and the lower limit are appropriately selected from the above preferred embodiments.
275≦2As+Sb+Bi+Pb≦25200・・・(1a)
275≦2As+Sb+Bi+Pb≦5300・・・(1b)
上記の数(1a)及び数(1b)式中、As、Sb、Bi、及びPbは各々合金組成での含有量(質量ppm)を表す。
275 ≦ 2As + Sb + Bi + Pb ≦ 25200 ... (1a)
275 ≦ 2As + Sb + Bi + Pb ≦ 5300 ... (1b)
In the above equations (1a) and (1b), As, Sb, Bi, and Pb each represent the content (mass ppm) in the alloy composition.
はんだ合金は、下記の数(2)式を満たすことが好ましい。 The solder alloy preferably satisfies the following equation (2).
0.01≦(2As+Sb)/(Bi+Pb)≦10.00・・・(2)
上記の数(2)式中、As、Sb、Bi、及びPbは各々合金組成での含有量(質量ppm)を表す。
0.01 ≦ (2As + Sb) / (Bi + Pb) ≦ 10.00 ... (2)
In the above equation (2), As, Sb, Bi, and Pb each represent the content (mass ppm) in the alloy composition.
As及びSbは含有量が多いとはんだ合金の濡れ性が劣化する。一方、Bi及びPbは、Asを含有することによる濡れ性の劣化を抑制するが、含有量が多すぎるとΔTが上昇してしまう。特に、Bi及びPbを同時に含有する合金組成では、ΔTが上昇しやすい。これらを鑑みると、Bi及びPbの含有量を増加させて過度に濡れ性を向上させようとするとΔTが広がってしまう。一方、AsやSbの含有量を増加させて増粘抑制効果を向上させようとすると濡れ性が劣化してしまう。そこで、As及びSbのグループ、Bi及びPbのグループに分け、両グループの合計量が適正な所定の範囲内である場合に、増粘抑制効果、ΔTの狭窄化、及び濡れ性のすべてが同時に満たされるのである。 If the contents of As and Sb are large, the wettability of the solder alloy deteriorates. On the other hand, Bi and Pb suppress the deterioration of wettability due to the inclusion of As, but if the content is too large, ΔT increases. In particular, in an alloy composition containing Bi and Pb at the same time, ΔT tends to increase. In view of these, if the contents of Bi and Pb are increased to excessively improve the wettability, ΔT will spread. On the other hand, if the content of As and Sb is increased to improve the effect of suppressing thickening, the wettability is deteriorated. Therefore, it is divided into As and Sb groups, Bi and Pb groups, and when the total amount of both groups is within an appropriate predetermined range, the thickening suppressing effect, the narrowing of ΔT, and the wettability are all simultaneously. It will be satisfied.
数(2)式が0.01未満であると、Bi及びPbの含有量の合計がAs及びPbの含有量の合計と比較して相対的に多くなるため、ΔTが広がってしまう。数(2)式の下限は、好ましくは0.02以上であり、より好ましくは0.41以上であり、さらに好ましくは0.90以上であり、特に好ましくは1.00以上であり、最も好ましくは1.40以上である。一方、数(2)式が10.00を超えると、As及びSbの含有量の合計がBi及びPbの含有量の合計より相対的に多くなるため、濡れ性が劣化してしまう。(2)の上限は、好ましくは5.33以下であり、より好ましくは4.50以下であり、さらに好ましくは2.67以下であり、特に好ましくは2.30以下である。 If the number (2) is less than 0.01, the total content of Bi and Pb is relatively large as compared with the total content of As and Pb, so that ΔT spreads. The lower limit of the equation (2) is preferably 0.02 or more, more preferably 0.41 or more, further preferably 0.90 or more, particularly preferably 1.00 or more, and most preferably. Is 1.40 or more. On the other hand, when the equation (2) exceeds 10.00, the total content of As and Sb becomes relatively larger than the total content of Bi and Pb, so that the wettability deteriorates. The upper limit of (2) is preferably 5.33 or less, more preferably 4.50 or less, still more preferably 2.67 or less, and particularly preferably 2.30 or less.
なお、数(2)式の分母は「Bi+Pb」であり、これらを含有しないと数(2)式が成立しない。そのため、はんだ合金は、Bi及びPbの少なくとも1種を含有することが好ましい。Bi及びPbを含有しない合金組成は、前述のように、濡れ性が劣る。 The denominator of the number (2) is "Bi + Pb", and the number (2) cannot be established unless these are included. Therefore, the solder alloy preferably contains at least one of Bi and Pb. The alloy composition containing no Bi and Pb is inferior in wettability as described above.
上記好ましい態様の中から上限及び下限を適宜選択したものが、下記の数(2a)式である。 The following equation (2a) is obtained by appropriately selecting the upper limit and the lower limit from the above preferred embodiments.
0.31≦(2As+Sb)/(Bi+Pb)≦10.00・・・(2a)
上記の数(2a)式中、As、Sb、Bi及びPbは各々合金組成での含有量(質量ppm)を表す。
0.31 ≦ (2As + Sb) / (Bi + Pb) ≦ 10.00 ... (2a)
In the above formula (2a), As, Sb, Bi and Pb each represent the content (mass ppm) in the alloy composition.
Agは、結晶界面にAg3Snを形成してはんだ合金の信頼性を向上させることができる任意元素である。また、Agはイオン化係数がSnに対して貴な元素であり、As、Pb、及びBiと共存することによりこれらの増粘抑制効果を助長する。Ag含有量は好ましくは0質量%以上4質量%以下であり、より好ましくは0.5質量%以上3.5質量%以下であり、さらに好ましくは1.0質量%以上3.0質量%以下である。 Ag is an optional element capable of forming Ag3Sn at the crystal interface to improve the reliability of the solder alloy. In addition, Ag is an element whose ionization coefficient is noble with respect to Sn, and when it coexists with As, Pb, and Bi, it promotes the effect of suppressing thickening of these elements. The Ag content is preferably 0% by mass or more and 4% by mass or less, more preferably 0.5% by mass or more and 3.5% by mass or less, and further preferably 1.0% by mass or more and 3.0% by mass or less. Is.
Cuは、はんだ継手の接合強度を向上させることができる任意元素である。また、Cuはイオン化係数がSnに対して貴な元素であり、As、Pb、及びBiと共存することによりこれらの増粘抑制効果を助長する。Cu含有量は好ましくは0質量%以上0.9質量%以下であり、より好ましくは0.1質量%以上0.8質量%以下であり、さらに好ましくは0.2質量%以上0.7質量%以下である。 Cu is an optional element that can improve the joint strength of solder joints. Further, Cu is an element whose ionization coefficient is noble with respect to Sn, and when it coexists with As, Pb, and Bi, it promotes the effect of suppressing thickening of these elements. The Cu content is preferably 0% by mass or more and 0.9% by mass or less, more preferably 0.1% by mass or more and 0.8% by mass or less, and further preferably 0.2% by mass or more and 0.7% by mass. % Or less.
はんだ合金の残部はSnであることが好ましい。はんだ合金は、前述の元素の他に不可避的不純物を含有してもよい。不可避的不純物を含有する場合であっても、前述の効果に影響することはない。Inは、含有量が多すぎるとΔTが広がるため、1000質量ppm以下であれば前述の効果に影響することはない。 The balance of the solder alloy is preferably Sn. The solder alloy may contain unavoidable impurities in addition to the above-mentioned elements. Even if it contains unavoidable impurities, it does not affect the above-mentioned effects. If the content of In is too large, ΔT spreads, and therefore, if it is 1000 mass ppm or less, it does not affect the above-mentioned effect.
<本実施の形態のフラックス及びソルダペーストの作用効果例>
チキソ剤と、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の何れか、あるいは、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の2種以上と、ロジンと、溶剤を含み、チキソ剤が、環状アミド化合物と非環状アミド化合物からなるフラックスでは、チキソ剤が非環状アミド化合物からなる場合と比較して、非環状アミド化合物の含有量を増やすことなく、チキソ性を向上させることができ、チキソ剤の析出を抑制することができる。このフラックスを用いたソルダペーストでは、にじみ、かすれ等が抑制された良好な印刷性を得ることができ、また、印刷後のソルダペーストが流れる印刷ダレを抑制することができる。更に、はんだ付け時の加熱によるソルダペーストの加熱ダレを抑制することができる。
<Example of action and effect of flux and solder paste of this embodiment>
Tixo agent and any one of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, or two or more kinds of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, rosin and solvent. In the flux in which the thixo agent is composed of a cyclic amide compound and an acyclic amide compound, the thixo property is improved without increasing the content of the acyclic amide compound as compared with the case where the thixo agent is composed of a non-cyclic amide compound. It can be improved and the precipitation of the thixo agent can be suppressed. In the solder paste using this flux, it is possible to obtain good printability in which bleeding, blurring and the like are suppressed, and it is possible to suppress printing sagging in which the solder paste flows after printing. Further, it is possible to prevent the solder paste from sagging due to heating during soldering.
また、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸は、はんだ付けで想定される温度域での耐熱性を有し、はんだ付け時に活性剤として機能する。これにより、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは2種以上を含むフラックス、及び、このフラックスを用いたソルダペーストでは、熱負荷の大きいリフロー条件下でも、はんだが良好に濡れ広がり、かつ、はんだの濡れ不良(ディウェット)の発生を抑制することができる。 Further, dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid have heat resistance in a temperature range expected in soldering and function as an activator at the time of soldering. As a result, a flux containing any one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, and a solder paste using this flux can be used even under reflow conditions with a large heat load. The solder can be satisfactorily wetted and spread, and the occurrence of poor wetting (dewetting) of the solder can be suppressed.
なお、耐熱性を有する有機酸として芳香族有機酸が挙げられる。しかし、芳香族有機酸は、耐熱性はあるものの、元々フラックスとしての活性が弱いため、添加量が自ずと多くなってしまう。すると残渣として残りやすく洗浄性が悪くなったり、析出してしまう等の問題が発生してしまう。 An aromatic organic acid can be mentioned as an organic acid having heat resistance. However, although the aromatic organic acid has heat resistance, its activity as a flux is originally weak, so that the amount added is naturally large. Then, it tends to remain as a residue, resulting in problems such as poor detergency and precipitation.
これに対し、ダイマー酸、トリマー酸、これらの水添加物を用いれば、耐熱性と活性を両立することができ、活性剤としての添加量を減らすことができるので、残渣を減らし洗浄性を向上させることができる。 On the other hand, if dimer acid, trimer acid, and water additives thereof are used, both heat resistance and activity can be achieved, and the amount added as an activator can be reduced, so that the residue is reduced and the detergency is improved. Can be made to.
以下の表1、表2、表3に示す組成で実施例と比較例のフラックスを調合し、このフラックスを使用してソルダペーストを調合して、フラックスのチキソ性、ソルダペーストの印刷ダレの抑制能、印刷性、加熱ダレの抑制能、はんだの濡れ広がり性、はんだの濡れ不良(ディウェット)の抑制能について検証した。なお、表1、表2、表3における組成率は、フラックスの全量を100とした場合のwt(重量)%である。 The fluxes of Examples and Comparative Examples are blended with the compositions shown in Tables 1, 2 and 3 below, and the solder paste is blended using this flux to suppress the chicosis of the flux and the printing sagging of the solder paste. The ability, printability, ability to suppress heating sagging, ability to spread solder wettability, and ability to suppress poor wetting (dewetting) of solder were verified. The composition ratios in Tables 1, 2 and 3 are wt (weight)% when the total amount of flux is 100.
ソルダペーストは、フラックスが11.0wt%、金属粉が89.0wt%である。また、ソルダペースト中の金属粉は、金属粉の全量を100としたとき、Agが3.0質量%、Cuが0.5質量%、残部がSnであるSn−Ag−Cu系のはんだ合金であり、金属粉の粒径の平均はφ20μmである。 The solder paste has a flux of 11.0 wt% and a metal powder of 89.0 wt%. Further, the metal powder in the solder paste is a Sn-Ag-Cu based solder alloy in which Ag is 3.0% by mass, Cu is 0.5% by mass, and the balance is Sn, when the total amount of the metal powder is 100. The average particle size of the metal powder is φ20 μm.
<フラックスのチキソ性の評価>
(1)検証方法
チキソ性の評価は、JIS Z3284−3 4.2に準拠し、スパイラル方式粘度計を用いて行った。粘度計の回転速度を3rpmと30rpmに設定し、所定時間回転後の粘度を読み取ってチキソ比を算出した。
<Evaluation of thixotropy of flux>
(1) Verification method The evaluation of thixotropic property was carried out in accordance with JIS Z3284-3 4.2 using a spiral viscometer. The rotation speed of the viscometer was set to 3 rpm and 30 rpm, and the viscosity after rotation for a predetermined time was read to calculate the thixotropy.
(2)判定基準
〇〇:チキソ比が0.60以上
〇 :チキソ比が0.30以上0.60未満
× :チキソ比が0.30未満
(2) Judgment criteria 〇 〇: Thixotropy ratio is 0.60 or more 〇: Thixotropy ratio is 0.30 or more and less than 0.60 ×: Thixotropy ratio is less than 0.30
<ソルダペーストの印刷ダレ抑制能の評価>
(1)検証方法
ソルダペーストの印刷ダレ抑制能の評価は、JIS Z3284−3 4.3に準拠し、所定のパターンでソルダペースト印刷部が形成されたステンレス製メタルマスクを使用して銅板にソルダペーストを印刷し、メタルマスクを取り除いた後、室温25±5℃、相対湿度50±10%で10〜20分間保管し、印刷された各パターンのうち、印刷されたソルダペースト全てが一体にならない最小間隔を目視により確認した。メタルマスクの厚みは0.2mm、ソルダペースト印刷部は四角形の開口で、大きさは3.0×1.5mmとなっている。ソルダペースト印刷部は、同じ大きさの複数の開口が間隔を異ならせて並び、開口の間隔Lは0.2−0.3−0.4−0.5−0.6−0.7−0.8−0.9−1.0−1.1−1.2mmとなっている。
<Evaluation of solder paste's ability to suppress printing sagging>
(1) Verification method The evaluation of the printing sagging suppression ability of the solder paste conforms to JIS Z3284-3 4.3, and the solder is used on a copper plate using a stainless metal mask in which the solder paste printing portion is formed in a predetermined pattern. After printing the paste and removing the metal mask, store it at room temperature 25 ± 5 ° C. and relative humidity 50 ± 10% for 10 to 20 minutes, and among the printed patterns, not all the printed solder pastes are integrated. The minimum interval was visually confirmed. The thickness of the metal mask is 0.2 mm, the solder paste printing portion has a quadrangular opening, and the size is 3.0 × 1.5 mm. In the solder paste printing section, multiple openings of the same size are lined up at different intervals, and the opening interval L is 0.2-0.3-0.4-0.5-0.6-0.7-. It is 0.8-0.9-1.0-1.1-1.2 mm.
(2)判定基準
〇:印刷後、一体にならない最小間隔が0.2mm以下
×:印刷後、一体にならない最小間隔が0.2mm超
(2) Judgment criteria 〇: The minimum distance that does not become one after printing is 0.2 mm or less ×: The minimum distance that does not become one after printing exceeds 0.2 mm
<ソルダペーストの印刷性の評価>
(1)検証方法
ソルダペーストの印刷性の評価は、JIS Z3284−3 4.1に準拠し、所定のパターンでソルダペースト印刷部が形成されたステンレス製メタルマスクを使用して銅板にソルダペーストを印刷し、印刷初期及び連続印刷時において、にじみ、かすれがないかを目視により確認した。
<Evaluation of printability of solder paste>
(1) Verification method The printability of the solder paste is evaluated in accordance with JIS Z3284-3 4.1, and the solder paste is applied to the copper plate using a stainless metal mask in which the solder paste printing portion is formed in a predetermined pattern. After printing, it was visually confirmed that there was no bleeding or blurring at the initial stage of printing and during continuous printing.
(2)判定基準
〇:印刷後、にじみ・かすれがない
×:印刷後、にじみ・かすれがある
(2) Judgment criteria 〇: No bleeding or blurring after printing ×: There is bleeding or blurring after printing
<ソルダペーストの加熱ダレ抑制能の評価>
(1)検証方法
ソルダペーストの加熱ダレ抑制能の評価は、JIS Z3284−3 4.4に準拠し、所定のパターンでソルダペースト印刷部が形成されたステンレス製メタルマスクを使用して銅板にソルダペーストを印刷し、メタルマスクを取り除いた後、150±10℃にて10分間加熱を行い、印刷された各パターンのうち、印刷されたソルダペースト全てが一体にならない最小間隔を目視により確認した。メタルマスクの厚みは0.2mm、ソルダペースト印刷部は四角形の開口で、大きさは3.0×1.5mmとなっている。ソルダペースト印刷部は、同じ大きさの複数の開口が間隔を異ならせて並び、開口の間隔Lは0.2−0.3−0.4−0.5−0.6−0.7−0.8−0.9−1.0−1.1−1.2mmとなっている。
<Evaluation of the ability of solder paste to suppress heating sagging>
(1) Verification method The evaluation of the ability to suppress heating sagging of solder paste conforms to JIS Z3284-3 4.4, and the solder is used on a copper plate using a stainless metal mask in which a solder paste printing portion is formed in a predetermined pattern. After printing the paste and removing the metal mask, the paste was heated at 150 ± 10 ° C. for 10 minutes, and the minimum interval at which all the printed solder pastes were not integrated was visually confirmed among the printed patterns. The thickness of the metal mask is 0.2 mm, the solder paste printing portion has a quadrangular opening, and the size is 3.0 × 1.5 mm. In the solder paste printing section, multiple openings of the same size are lined up at different intervals, and the opening interval L is 0.2-0.3-0.4-0.5-0.6-0.7-. It is 0.8-0.9-1.0-1.1-1.2 mm.
(2)判定基準
〇:一体にならない最小間隔が1.0mm以下
×:一体にならない最小間隔が1.0mm超
(2) Judgment criteria 〇: Minimum distance not integrated is 1.0 mm or less ×: Minimum distance not integrated is more than 1.0 mm
<はんだの濡れ広がりの評価>
(1)検証方法
はんだの濡れ広がりの評価試験は、各実施例及び各比較例に記載のフラックスと上述した金属粉を混合させたソルダペーストを、JIS Z 3284−3に記載の所定のパターンでソルダペーストの印刷部が形成されたステンレス製のマスクを使用して、縦50mm×横50mm×厚さ0.5mmのBare−Cu板に印刷する。
<Evaluation of wet spread of solder>
(1) Verification method In the evaluation test of the wet spread of the solder, a solder paste in which the flux described in each Example and each Comparative Example and the above-mentioned metal powder are mixed is used in a predetermined pattern described in JIS Z 3284-3. Using a stainless steel mask on which a printing portion of solder paste is formed, printing is performed on a Barre-Cu plate having a length of 50 mm, a width of 50 mm, and a thickness of 0.5 mm.
マスクに設けられた印刷部は四角形の開口で、大きさは3.0mm×1.5mmとなっている。印刷部は、同じ大きさの複数の開口が間隔を異ならせて並び、開口の間隔は0.2−0.3−0.4−0.5−0.6−0.7−0.8−0.9−1.0−1.1−1.2mmとなっている。 The printed portion provided on the mask has a quadrangular opening, and the size is 3.0 mm × 1.5 mm. In the printing section, multiple openings of the same size are lined up at different intervals, and the intervals between the openings are 0.2-0.3-0.4-0.5-0.6-0.7-0.8. It is -0.9-1.0-1.1-1.2 mm.
ソルダペーストの印刷後、マスクを取り除き、リフロー前に、並列する印刷部の最小間隔である0.2mmの箇所でソルダペーストが接触していないことを確認し、リフローを行う。リフローの条件は、エアー雰囲気下に190℃で120secの予備加熱を行った後、昇温速度を1℃/secとして190℃から260℃まで温度を上昇させて本加熱を行う。 After printing the solder paste, the mask is removed, and before the reflow, it is confirmed that the solder paste is not in contact at the minimum interval of 0.2 mm between the parallel printing portions, and the reflow is performed. The conditions for reflow are that after preheating at 190 ° C. for 120 sec in an air atmosphere, the temperature is raised from 190 ° C. to 260 ° C. at a heating rate of 1 ° C./sec to perform the main heating.
(2)判定基準
上述した所定の間隔で印刷されたソルダペーストが、リフロー後に濡れ広がって接触し融合された箇所の間隔を確認する。N=4において
〇:間隔Lが0.8mm以下の箇所が全て融合している。
×:1か所でも間隔Lが0.8mm以下の箇所で融合していない。
(2) Judgment Criteria Check the intervals between the points where the solder paste printed at the above-mentioned predetermined intervals wets and spreads after reflowing and comes into contact with each other and fused. At N = 4, 〇: All locations where the interval L is 0.8 mm or less are fused.
X: Not fused at a location where the interval L is 0.8 mm or less even at one location.
<はんだのディウェット抑制の評価>
(1)検証方法
はんだのディウェット抑制の評価試験は、各実施例及び各比較例に記載のフラックスと上述した金属粉を混合させたソルダペーストを、縦0.8mm×横0.8mmのCu−OSPランド上に印刷し、リフローを実施した。ソルダペーストの印刷厚さは0.12mmである。リフローの条件は、エアー雰囲気下に190℃で120secの予備加熱を行った後、昇温速度を1℃/secとして190℃から260℃まで温度を上昇させて本加熱を行う。
<Evaluation of solder dewetting suppression>
(1) Verification method In the evaluation test of solder dewetting suppression, a solder paste in which the flux described in each Example and each Comparative Example and the above-mentioned metal powder are mixed is mixed with Cu having a length of 0.8 mm and a width of 0.8 mm. -Printed on OSP land and reflowed. The print thickness of the solder paste is 0.12 mm. The conditions for reflow are that after preheating at 190 ° C. for 120 sec in an air atmosphere, the temperature is raised from 190 ° C. to 260 ° C. at a heating rate of 1 ° C./sec to perform the main heating.
(2)判定基準
リフロー後にディウェットDwが発生していないか光学顕微鏡を用いて観察した。N=12において
○:はんだ組成物を塗布した部分はすべて、はんだでぬれた状態である。
×:はんだ組成物を塗布した部分の大半は、はんだでぬれた状態(ディウェッティングも含まれる。)であり濡れ不良が発生している。または、はんだがぬれた様子はなく、溶融したはんだは一つまたは複数のはんだボールとなった状態(ノンウェッティング)である。
(2) Judgment Criteria It was observed using an optical microscope whether or not dewet Dw was generated after the reflow. At N = 12, ◯: All the portions coated with the solder composition are in a state of being wet with solder.
X: Most of the portion coated with the solder composition is in a wet state with solder (including dewetting), and poor wetting occurs. Alternatively, the solder does not appear to be wet, and the molten solder is in a state of one or more solder balls (non-wetting).
<総合評価>
〇:フラックスのチキソ性の評価が〇〇または〇、かつ、ソルダペーストの印刷ダレ抑制能の評価、ソルダペーストの印刷性の評価、ソルダペーストの加熱ダレ抑制能の評価、はんだの濡れ広がりの評価、はんだのディウェット抑制の評価の何れも〇であった
×:フラックスのチキソ性の評価、ソルダペーストの印刷ダレ抑制能の評価、ソルダペーストの印刷性の評価、ソルダペーストの加熱ダレ抑制能の評価、はんだの濡れ広がりの評価、はんだのディウェット抑制の評価の何れか、または全てが×であった
<Comprehensive evaluation>
〇: Evaluation of the texotic property of the flux is 〇 〇 or 〇, and evaluation of the ability to suppress printing sagging of solder paste, evaluation of printability of solder paste, evaluation of ability to suppress heating dripping of solder paste, evaluation of wet spread of solder , All of the evaluations of solder dewetting suppression were 〇: Evaluation of flux chicosis, evaluation of solder paste print sagging suppression ability, evaluation of solder paste printability, solder paste heating sagging suppression ability Any or all of the evaluation, the evaluation of the wet spread of the solder, and the evaluation of the dewetting suppression of the solder were x.
実施例1〜実施例4は、ダイマー酸、トリマー酸を変えたもので、実施例1では、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、炭素数が10のジカルボン酸であるセバシン酸と、炭素数が6のジアミンである1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、炭素数が10のジカルボン酸であるセバシン酸と、炭素数が6のジアミンである1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計の含有量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で41.0wt%含む。 In Examples 1 to 4, dimer acid and trimer acid were changed. In Example 1, hydrogenated dimer acid was added as dimer acid and trimer acid in an amount of 5.0 wt% within the range specified in the present invention. It contains, as rosin, polymerized rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid, which is a dicarboxylic acid having 10 carbon atoms, and 1,6-hexanediamine, which is a diamine having 6 carbon atoms, is defined in the present invention. This acyclic amide compound is an acyclic polycondensation of sebacic acid, which is a dicarboxylic acid having 2.0 wt% and 10 carbon atoms, and 1,6-hexanediamine, which is a diamine having 6 carbon atoms. It contains 4.0 wt% within the range specified in the invention. The total content of the cyclic amide compound and the non-cyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 41.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例1では、チキソ比が0.60以上であり、フラックスのチキソ性を向上させることができ、チキソ性に対して十分な効果が得られ、チキソ剤の析出を抑制することができた。また、このフラックスを用いたソルダペーストでは、印刷後、一体にならない最小間隔が0.2mm以下であり、印刷後のソルダペーストが流れる印刷ダレを抑制することができ、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷後、にじみ・かすれがみられず、にじみ、かすれ等が抑制された良好な印刷性を得ることができ、印刷性に対して十分な効果が得られた。また、加熱後、一体にならない最小間隔が1.0mm以下であり、はんだ付け時の加熱によるソルダペーストの加熱ダレを抑制することができ、加熱ダレの抑制能に対して十分な効果が得られた。更に、リフロー後、間隔Lが0.8mm以下の箇所が全て融合しており、濡れ広がり性に対して十分な効果が得られた。また、はんだ組成物を塗布した部分はすべて、はんだでぬれた状態であり、ディウェット抑制能に対して十分な効果が得られた。 In Example 1, the thixotropy ratio was 0.60 or more, the thixotropy of the flux could be improved, a sufficient effect on the thixotropy was obtained, and the precipitation of the thixotropy could be suppressed. Further, in the solder paste using this flux, the minimum interval that does not become integrated after printing is 0.2 mm or less, and it is possible to suppress the printing sagging of the solder paste flowing after printing, and to suppress the printing sagging of the solder paste. A sufficient effect was obtained for Noh. Further, after printing, no bleeding or blurring was observed, and good printability with suppressed bleeding, blurring, etc. could be obtained, and a sufficient effect on printability was obtained. In addition, the minimum interval that does not become one after heating is 1.0 mm or less, and it is possible to suppress the heating sagging of the solder paste due to heating during soldering, and a sufficient effect on the ability to suppress the heating sagging can be obtained. Soldering. Further, after the reflow, all the places where the interval L was 0.8 mm or less were fused, and a sufficient effect on the wettability was obtained. In addition, all the portions coated with the solder composition were in a wet state with solder, and a sufficient effect on the dewetting suppressing ability was obtained.
実施例2では、ダイマー酸、トリマー酸としてダイマー酸を、本発明で規定される範囲内で5.0wt%含む。他は実施例1と同様で、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で41.0wt%含む。 In Example 2, dimer acid and dimer acid as trimer acid are contained in an amount of 5.0 wt% within the range specified in the present invention. Others are the same as in Example 1, and the polymerized rosin is contained as the rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 41.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例2でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 2, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例3では、ダイマー酸、トリマー酸として水添トリマー酸を、本発明で規定される範囲内で5.0wt%含む。他は実施例1と同様で、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で41.0wt%含む。 In Example 3, hydrogenated trimeric acid is contained as dimer acid and trimer acid in an amount of 5.0 wt% within the range specified in the present invention. Others are the same as in Example 1, and the polymerized rosin is contained as the rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 41.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例3でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 3, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例4では、ダイマー酸、トリマー酸としてトリマー酸を、本発明で規定される範囲内で5.0wt%含む。他は実施例1と同様で、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で41.0wt%含む。 In Example 4, dimer acid and trimer acid as trimer acid are contained in an amount of 5.0 wt% within the range specified in the present invention. Others are the same as in Example 1, and the polymerized rosin is contained as the rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 41.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例4でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 4, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例5では、ダイマー酸、トリマー酸を複合添加したもので、水添ダイマー酸を、本発明で規定される範囲内で1.25wt%、ダイマー酸を、本発明で規定される範囲内で1.25wt%、水添トリマー酸を、本発明で規定される範囲内で1.25wt%、トリマー酸を、本発明で規定される範囲内で1.25wt%含む。2種以上のダイマー酸、トリマー酸の合計量も、本発明で規定される範囲内である。他は実施例1と同様で、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で41.0wt%含む。 In Example 5, dimer acid and trimer acid were added in combination, and hydrogenated dimer acid was added in an amount of 1.25 wt% within the range specified in the present invention, and dimer acid was added in the range specified in the present invention. It contains 1.25 wt%, hydrogenated trimer acid in the range specified in the present invention of 1.25 wt%, and trimer acid in the range specified in the present invention of 1.25 wt%. The total amount of two or more dimer acids and trimer acids is also within the range specified in the present invention. Others are the same as in Example 1, and the polymerized rosin is contained as the rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 41.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例5でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 5, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例6〜実施例9は、ダイマー酸、トリマー酸の添加量を変えたもので、実施例6では、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で20.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で26.0wt%含む。 In Examples 6 to 9, the amounts of dimer acid and trimer acid added were changed. In Example 6, hydrogenated dimer acid was used as dimer acid and trimer acid within the range specified in the present invention. It contains 0.0 wt% and contains polymerized rosin as rosin at 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 26.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例6でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 6, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例7では、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で10.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 In Example 7, hydrogenated dimer acid as dimer acid and trimer acid is contained in 10.0 wt% within the range specified in the present invention, and polymerized rosin as rosin is contained in the range specified in the present invention at 45.0 wt%. Including%. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 36.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例7でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 7, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例8では、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で43.0wt%含む。 In Example 8, hydrogenated dimer acid as dimer acid and trimer acid is contained in an amount of 3.0 wt% within the range specified in the present invention, and polymerized rosin as a rosin is contained in the range specified in the present invention at 45.0 wt%. Including%. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 43.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例8でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 8, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例9では、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で0.5wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で45.5wt%含む。 In Example 9, hydrogenated dimer acid as dimer acid and trimer acid is contained in an amount of 0.5 wt% within the range specified in the present invention, and polymerized rosin as rosin is contained in the range specified in the present invention at 45.0 wt%. Including%. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 45.5 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例9でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 9, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例10は、他の有機酸を添加したもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 Example 10 is obtained by adding another organic acid, containing 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as other organic acid. , 3.0 wt% is contained within the range specified by the present invention, and polymerized rosin is contained as the rosin within the range specified by the present invention at 45.0 wt%. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例10でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 10, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例11、実施例12は、環状アミド化合物と非環状アミド化合物の添加量を変えたもので、実施例11では、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で0.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で8.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は8.5wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で35.5wt%含む。 In Examples 11 and 12, the addition amounts of the cyclic amide compound and the non-cyclic amide compound were changed. In Example 11, the dimer acid and the hydrogenated dimer acid as the trimer acid were used in the range specified in the present invention. Contains 5.0 wt% as other organic acid, 3.0 wt% as other organic acid within the range specified in the present invention, and polymerized rosin as the rosin, 45.0 wt% within the range specified in the present invention. % Including. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 0.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 8.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 8.5 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 35.5 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例11では、環状アミド化合物を0.5wt%含むことで、非環状アミド化合物を8wt%含んでも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 In Example 11, by containing 0.5 wt% of the cyclic amide compound, even if 8 wt% of the acyclic amide compound was contained, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例12では、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で8.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は10.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で34.0wt%含む。 In Example 12, hydrogenated dimer acid as dimer acid and trimer acid is contained in an amount of 5.0 wt% within the range specified in the present invention, and glutaric acid is contained as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 8.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the non-cyclic amide compound is 10.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 34.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例12でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。このように、実施例12では、環状アミド化合物を8.0wt%含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレの抑制能、濡れ広がり性、ディウェット抑制能が阻害されず、これらに対して十分な効果が得られた。これにより、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、炭素数が10のジカルボン酸と炭素数が6のジアミンが環状に重縮合した環状アミド化合物と、炭素数が10のジカルボン酸と炭素数が6のジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で含むことで、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 12, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet. As described above, in Example 12, even if the cyclic amide compound is contained in an amount of 8.0 wt%, the thixotropy of the flux, the ability to suppress the printing sagging of the solder paste, the printing property, the ability to suppress the heating sagging, the wet spreading property, and the dewetting property are suppressed. The ability was not impaired, and a sufficient effect was obtained for these. As a result, any one of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, or two or more kinds, and a dicarboxylic acid having 10 carbon atoms and a diamine having 6 carbon atoms were cyclically polycondensed. By including the cyclic amide compound and the acyclic amide compound in which a dicarboxylic acid having 10 carbon atoms and a diamine having 6 carbon atoms are acyclically polycondensed within the range specified in the present invention, the flux property can be increased. Sufficient effects were obtained on the ability to suppress printing sagging, printability, heat sagging suppressing ability, wet spreading property, and dewetting suppressing ability of solder paste.
実施例13は、環状アミド化合物及び非環状アミド化合物の種類を変えたもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、炭素数が6のジカルボン酸であるアジピン酸と、炭素数が6のジアミンである1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を2.0wt%含み、炭素数が6のジカルボン酸であるアジピン酸と、炭素数が6のジアミンである1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 In Example 13, the types of the cyclic amide compound and the non-cyclic amide compound were changed, and the dimer acid and hydrogenated dimer acid as the trimer acid were contained in an amount of 5.0 wt% within the range specified in the present invention, and other It contains 3.0 wt% of glutaric acid as an organic acid within the range specified in the present invention and 45.0 wt% of polymerized rosin as a rosin within the range specified in the present invention. Further, as a thixo agent, 2.0 wt% of adipic acid, which is a dicarboxylic acid having 6 carbon atoms, and a cyclic amide compound, which is a cyclic polycondensation of 1,6-hexanediamine, which is a diamine having 6 carbon atoms, is contained, and carbon is contained. It contains 4.0 wt% of adipic acid, which is a dicarboxylic acid having 6 numbers, and an acyclic amide compound, which is acyclic polycondensation of 1,6-hexanediamine, which is a diamine having 6 carbon atoms. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例13でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。このように、実施例13では、チキソ剤として、アジピン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物と、アジピン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレの抑制能、濡れ広がり性、ディウェット抑制能が阻害されず、これらに対して十分な効果が得られた。これにより、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、炭素数が6のジカルボン酸と炭素数が6のジアミンが環状に重縮合した環状アミド化合物と、炭素数が6のジカルボン酸と炭素数が6のジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 13, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet. As described above, in Example 13, as the thixo agent, a cyclic amide compound in which adipic acid and 1,6-hexanediamine are cyclically polycondensed, and a non-cyclic amide compound in which adipic acid and 1,6-hexanediamine are polycondensed cyclically. Even if the cyclic amide compound is contained within the range specified in the present invention, the thixo property of the flux, the printing sagging suppressing ability of the solder paste, the printing property, the heating sagging suppressing ability, the wet spreading property, and the dewetting suppressing ability are inhibited. However, a sufficient effect was obtained for these. As a result, any one of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, or two or more kinds, and a dicarboxylic acid having 6 carbon atoms and a diamine having 6 carbon atoms were cyclically polycondensed. A cyclic amide compound and a non-cyclic amide compound in which a dicarboxylic acid having 6 carbon atoms and a diamine having 6 carbon atoms are cyclically polycondensed can also be contained within the range specified in the present invention to provide flux. Sufficient effects were obtained on the ability to suppress printing sagging, printability, heat sagging suppressing ability, wet spreading property, and dewetting suppressing ability of solder paste.
実施例14、実施例15は、他の有機酸の種類を変えたもので、実施例14では、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてコハク酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 In Examples 14 and 15, the types of other organic acids were changed. In Example 14, hydrogenated dimer acid was used as dimer acid and trimer acid within the range specified in the present invention (5.0 wt). %, Succinic acid as another organic acid is contained in 3.0 wt% within the range specified in the present invention, and polymerized rosin as rosin is contained in 45.0 wt% in the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例14でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 14, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例15では、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてアジピン酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 In Example 15, hydrogenated dimer acid was contained as dimer acid and trimer acid in an amount of 5.0 wt% within the range specified in the present invention, and adipic acid was contained as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin at 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例15でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 15, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例16は、他の有機酸を複合添加したもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてコハク酸を、本発明で規定される範囲内で1.0wt%含み、グルタル酸を、本発明で規定される範囲内で1.0wt%含む。2種以上の他の有機酸の合計量も、本発明で規定される範囲内である。また、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含み、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で39.0wt%含む。 Example 16 is a compound addition of another organic acid, which contains 5.0 wt% of dimer acid and hydrogenated dimer acid as trimer acid within the range specified in the present invention, and succinic acid as another organic acid. Is contained in 1.0 wt% within the range specified in the present invention, and glutaric acid is contained in 1.0 wt% within the range specified in the present invention. The total amount of two or more other organic acids is also within the range specified in the present invention. Further, in the present invention, a cyclic amide compound containing 45.0 wt% of polymerized rosin as rosin within the range specified in the present invention and in which sebacic acid and 1,6-hexanediamine are cyclically polycondensed as a thixo agent. It contains 2.0 wt% within the specified range, and contains 4.0 wt% of the acyclic amide compound obtained by polycondensing sebacic acid and 1,6-hexanediamine in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 39.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例16でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 16, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例17は、他の有機酸の添加量を変えたもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で2.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で39.0wt%含む。 In Example 17, the amount of the other organic acid added was changed, and the dimer acid and hydrogenated dimer acid as the trimer acid were contained in an amount of 5.0 wt% within the range specified in the present invention as the other organic acid. Glutaric acid is contained in an amount of 2.0 wt% within the range specified in the present invention, and polymerized rosin as a rosin is contained in an amount of 45.0 wt% in the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 39.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例17でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 17, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例14〜実施例17に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内で他の有機酸の種類を変える、複数種類の他の有機酸を組み合わせる、他の有機酸の量を変えることでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Examples 14 to 17, any one or more of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, and cyclic amide compound and acyclic amide compound as thixo agents. By including within the range specified in the present invention, the type of other organic acid can be changed within the range specified in the present invention, multiple types of other organic acids can be combined, and the amount of other organic acid can be adjusted. Even by changing the changes, sufficient effects were obtained on the tixo property of the flux, the printing sagging suppressing ability of the solder paste, the printing property, the heating sagging suppressing ability, the wet spreading property, and the dewetting suppressing ability.
実施例18は、ロジンを複合添加したもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含む。また、ロジンとして重合ロジンを、本発明で規定される範囲内で15.0wt%、アクリル酸変性水添ロジンを、本発明で規定される範囲内で10.0wt%、水添ロジンを、本発明で規定される範囲内で10.0wt%、不均化ロジンを、本発明で規定される範囲内で10.0wt%含む。2種以上のロジンの合計量も、本発明で規定される範囲内である。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 Example 18 is a compound addition of rosin, which contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid. It contains 3.0 wt% within the range specified in the invention. In addition, polymerized rosin as rosin, 15.0 wt% within the range specified in the present invention, acrylic acid-modified hydrogenated rosin, 10.0 wt% within the range specified in the present invention, hydrogenated rosin, It contains 10.0 wt% within the range specified in the present invention and 10.0 wt% within the range specified in the present invention. The total amount of two or more rosins is also within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例18でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 18, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例18に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内で複数種類のロジンを組み合わせでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Example 18, any one or more of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, and cyclic amide compound and acyclic amide compound as thixo agents are used in the present invention. By including within the range specified in the present invention, even if a plurality of types of rosins are combined within the range specified in the present invention, the flux property, the solder paste's ability to suppress printing sagging, printability, ability to suppress heating sagging, and wetting Sufficient effect was obtained on spreadability and ability to suppress dewet.
実施例19は、アミンの添加量を変えたもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で5.0wt%含む。ハロゲンは含まず、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 In Example 19, the amount of amine added was changed, and hydrogenated dimer acid was contained as dimer acid and trimer acid in an amount of 5.0 wt% within the range specified in the present invention, and glutaric acid was used as another organic acid. , 3.0 wt% is contained within the range specified by the present invention, and polymerized rosin is contained as the rosin within the range specified by the present invention at 45.0 wt%. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, 2-phenylimidazole as an amine is contained in an amount of 5.0 wt% within the range specified in the present invention. It does not contain halogen and contains 36.0 wt% of tetraethylene glycol monomethyl ether with the balance as a solvent within the range specified in the present invention.
実施例19でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 19, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例20は、アミンの種類を変えたもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニル−4−メチルイミダゾールを、本発明で規定される範囲内で5.0wt%含む。ハロゲンは含まず、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 In Example 20, the type of amine was changed, and hydrogenated dimer acid was contained as dimer acid and trimer acid in an amount of 5.0 wt% within the range specified in the present invention, and glutaric acid was contained as another organic acid. It contains 3.0 wt% within the range specified in the present invention and contains 45.0 wt% polymerized rosin as the rosin within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, 2-phenyl-4-methylimidazole as an amine is contained in an amount of 5.0 wt% within the range specified in the present invention. It does not contain halogen and contains 36.0 wt% of tetraethylene glycol monomethyl ether with the balance as a solvent within the range specified in the present invention.
実施例20でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 20, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例19〜実施例20に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内でアミンを含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Examples 19 to 20, any one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, and cyclic amide compounds and acyclic amide compounds as thixo agents. By including the above in the range specified in the present invention, even if the amine is contained in the range specified in the present invention, the thiox property of the flux, the ability to suppress the printing sagging of the solder paste, the printability, and the ability to suppress the heating sagging Sufficient effect was obtained on wet spreadability and dewet suppression ability.
実施例21は、ハロゲンの種類を変えたもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンを含まず、アミンハロゲン化水素酸塩としてジフェニルグアニジン・HBrを、本発明で規定された範囲内で2.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で39.0wt%含む。 In Example 21, the type of halogen was changed, and hydrogenated dimer acid was contained as dimer acid and trimer acid in an amount of 5.0 wt% within the range specified in the present invention, and glutaric acid was contained as another organic acid. It contains 3.0 wt% within the range specified in the present invention, and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, amine-free, diphenylguanidine / HBr as an amine hydrogen halide is contained in an amount of 2.0 wt% within the range specified in the present invention, and tetraethylene glycol monomethyl ether is specified in the present invention with the balance as a solvent. Includes 39.0 wt% within the specified range.
実施例21でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 21, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例22は、ハロゲンの添加量を変えたもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンを含まず、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定された範囲内で5.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 In Example 22, the amount of halogen added was changed, and the amount of dimer acid and hydrogenated dimer acid as trimer acid was 5.0 wt% within the range specified in the present invention, and glutaric acid was used as another organic acid. , 3.0 wt% is contained within the range specified by the present invention, and polymerized rosin is contained as the rosin within the range specified by the present invention at 45.0 wt%. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, it does not contain amine and contains 5.0 wt% of trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound within the range specified in the present invention, and the balance is tetra as a solvent. It contains 36.0 wt% of ethylene glycol monomethyl ether within the range specified in the present invention.
実施例22でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 22, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例21〜実施例22に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内でハロゲンを含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Examples 21 to 22, any one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, and cyclic amide compounds and acyclic amide compounds as thixo agents. By including the above in the range specified in the present invention, even if the halogen is contained in the range specified in the present invention, the flux property, the ability to suppress the printing sagging of the solder paste, the printability, and the ability to suppress the heating sagging. Sufficient effect was obtained on wet spreadability and dewet suppression ability.
実施例23は、酸化防止剤を添加したもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミン、ハロゲンを含まず、酸化防止剤としてヒンダードフェノール系酸化防止剤を、本発明で規定された範囲内で5.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 In Example 23, an antioxidant was added, and hydrogenated dimer acid was contained as dimer acid and trimer acid in an amount of 5.0 wt% within the range specified in the present invention, and glutaric acid was used as another organic acid. It contains 3.0 wt% within the range specified in the present invention and contains 45.0 wt% polymerized rosin as the rosin within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains a hindered phenol-based antioxidant as an antioxidant, which does not contain amines and halogens, in an amount of 5.0 wt% within the range specified in the present invention, and tetraethylene glycol monomethyl ether using the balance as a solvent. Includes 36.0 wt% within the range specified in.
実施例23でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 23, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例23に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内で酸化防止剤を含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Example 23, the present invention comprises one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, and cyclic amide compounds and acyclic amide compounds as thixo agents. By including within the range specified in the present invention, even if the antioxidant is contained within the range specified in the present invention, the flux property, the ability to suppress the printing sagging of the solder paste, the printability, the ability to suppress the heating sagging, and the wetness A sufficient effect was obtained on the spreadability and the ability to suppress dewet.
実施例24は、アミン、ハロゲン、酸化防止剤を添加したもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてコハク酸を、本発明で規定される範囲内で0.2wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で5.0wt%含み、アミンハロゲン化水素酸塩としてジフェニルグアニジン・HBrを、本発明で規定された範囲内で1.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で3.0wt%含み、酸化防止剤としてヒンダードフェノール系酸化防止剤を、本発明で規定された範囲内で3.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で31.8wt%含む。 In Example 24, amine, halogen, and antioxidant were added, and hydrogenated dimer acid as dimer acid and trimer acid was contained in an amount of 5.0 wt% within the range specified in the present invention as other organic acids. It contains 0.2 wt% of succinic acid within the range specified in the present invention, and contains 45.0 wt% of polymerized rosin as the rosin within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, 2-phenylimidazole as an amine is contained in an amount of 5.0 wt% within the range specified in the present invention, and diphenylguanidine / HBr as an amine hydrohalide is 1.0 wt% in the range specified in the present invention. %, And contains 3.0 wt% of trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound within the range specified in the present invention, and hindered phenolic oxidation as an antioxidant. The inhibitor is contained in an amount of 3.0 wt% within the range specified in the present invention, and the balance is a solvent containing tetraethylene glycol monomethyl ether in an amount of 31.8 wt% within the range specified in the present invention.
実施例24でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 24, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例24に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内でアミン、ハロゲン、酸化防止剤を含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Example 24, the present invention comprises one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, and cyclic amide compounds and acyclic amide compounds as thixo agents. By including within the range specified in the present invention, even if amines, halogens, and antioxidants are contained within the range specified in the present invention, the thixophilicity of the flux, the ability to suppress printing sagging of solder paste, printability, and heating sagging Sufficient effects were obtained on the inhibitory ability, wet spreadability, and dewet inhibitory ability.
実施例25〜実施例43は、さらにチキソ剤としてエステル化合物を添加したもので、実施例25は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてコハク酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 In Examples 25 to 43, an ester compound was further added as a thyxo agent, and in Example 25, dimer acid and hydrogenated dimer acid as trimer acid were added as 5.0 wt within the range specified in the present invention. %, Succinic acid as another organic acid is contained in 3.0 wt% within the range specified in the present invention, and polymerized rosin as rosin is contained in 45.0 wt% in the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例25でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 25, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例26は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてアジピン酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 Example 26 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and adipic acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin at 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例26でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 26, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例27は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸を含まず、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で41.0wt%含む。 Example 27 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, does not contain other organic acids, and defines polymerized rosin as rosin in the present invention. It contains 45.0 wt% within the specified range. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 41.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例27でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 27, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例28は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてコハク酸を、本発明で規定される範囲内で1.0wt%含み、グルタル酸を、本発明で規定される範囲内で1.0wt%含む。2種以上の他の有機酸の合計の添加量も、本発明で規定される範囲内である。また、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で39.0wt%含む。 Example 28 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and succinic acid as another organic acid within the range specified in the present invention. It contains 1.0 wt% and contains 1.0 wt% glutaric acid within the range specified in the present invention. The total amount of the two or more other organic acids added is also within the range specified in the present invention. Further, polymerized rosin is contained as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 39.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例28でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 28, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例29は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で8.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で2.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 Example 29 contains a hydrogenated dimer acid as a dimer acid and a trimer acid in an amount of 8.0 wt% within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 2.0 wt% and contains 45.0 wt% polymerized rosin as the rosin within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 36.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例29でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 29, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例25〜実施例29に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、他の有機酸を、本発明で想定される範囲内で含み、チキソ剤としてさらにエステル化合物を、本発明で規定される範囲内で含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Examples 25 to 29, any one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, and cyclic amide compounds and acyclic amide compounds as thixo agents. Is included within the range specified in the present invention, thereby containing other organic acids within the range assumed in the present invention, and further containing an ester compound as a thixo agent within the range specified in the present invention. As a result, sufficient effects were obtained on the thixophilicity of the flux, the printing sagging suppressing ability of the solder paste, the printing property, the heating sagging suppressing ability, the wet spreading property, and the dewetting suppressing ability.
実施例30は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で5.0wt%含む。ハロゲンは含まず、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 Example 30 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, 2-phenylimidazole as an amine is contained in an amount of 5.0 wt% within the range specified in the present invention. It does not contain halogen and contains 36.0 wt% of tetraethylene glycol monomethyl ether with the balance as a solvent within the range specified in the present invention.
実施例30でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 30, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例31は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニル−4−メチルイミダゾールを、本発明で規定される範囲内で5.0wt%含む。ハロゲンは含まず、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 Example 31 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, 2-phenyl-4-methylimidazole as an amine is contained in an amount of 5.0 wt% within the range specified in the present invention. It does not contain halogen and contains 36.0 wt% of tetraethylene glycol monomethyl ether with the balance as a solvent within the range specified in the present invention.
実施例31でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 31, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例30〜実施例31に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内でアミンを含み、チキソ剤としてさらにエステル化合物を、本発明で規定される範囲内で含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Examples 30 to 31, one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, and cyclic amide compounds and acyclic amide compounds as thixo agents. Is contained within the range specified by the present invention, the amine is contained within the range specified by the present invention, and the ester compound is further contained as a thixo agent within the range specified by the present invention. Sufficient effects were obtained on the thiox property, the ability to suppress printing sagging of solder paste, the printing property, the ability to suppress heating sagging, the ability to spread wet, and the ability to suppress dewet.
実施例32は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンを含まず、アミンハロゲン化水素酸塩としてジフェニルグアニジン・HBrを、本発明で規定された範囲内で2.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で39.0wt%含む。 Example 32 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, amine-free, diphenylguanidine / HBr as an amine hydrogen halide is contained in an amount of 2.0 wt% within the range specified in the present invention, and tetraethylene glycol monomethyl ether is specified in the present invention with the balance as a solvent. Includes 39.0 wt% within the specified range.
実施例32でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 32, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例33は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンを含まず、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定された範囲内で5.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 Example 33 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, it does not contain amine and contains 5.0 wt% of trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound within the range specified in the present invention, and the balance is tetra as a solvent. It contains 36.0 wt% of ethylene glycol monomethyl ether within the range specified in the present invention.
実施例33でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 33, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例32〜実施例33に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内でハロゲンを含み、チキソ剤としてさらにエステル化合物を、本発明で規定される範囲内で含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Examples 32 to 33, any one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, and cyclic amide compounds and acyclic amide compounds as thixo agents. By including the above in the range specified in the present invention, the halogen is contained in the range specified in the present invention, and the ester compound is further contained as a thixo agent in the range specified in the present invention. Sufficient effects were obtained on the thiox property, the ability to suppress printing dripping of solder paste, the printing property, the ability to suppress heating dripping, the ability to spread wet, and the ability to suppress dewet.
実施例34は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミン、ハロゲンを含まず、酸化防止剤としてヒンダードフェノール系酸化防止剤を、本発明で規定された範囲内で5.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で36.0wt%含む。 Example 34 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, the present invention contains a hindered phenol-based antioxidant as an antioxidant, which does not contain amines and halogens, in an amount of 5.0 wt% within the range specified in the present invention, and tetraethylene glycol monomethyl ether using the balance as a solvent. Includes 36.0 wt% within the range specified in.
実施例34でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 34, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例34に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内で酸化防止剤を含み、チキソ剤としてさらにエステル化合物を、本発明で規定される範囲内で含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Example 34, the present invention comprises one or more of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, and cyclic amide compounds and acyclic amide compounds as thixo agents. By including within the range specified in the present invention, an antioxidant is contained within the range specified in the present invention, and an ester compound is further contained as a thixo agent within the range specified in the present invention. Sufficient effects were obtained on the properties, the ability to suppress print sagging of solder paste, the printability, the ability to suppress heat sagging, the ability to spread wet, and the ability to suppress dewet.
実施例35は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてコハク酸を、本発明で規定される範囲内で0.2wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で5.0wt%含み、アミンハロゲン化水素酸塩としてジフェニルグアニジン・HBrを、本発明で規定された範囲内で1.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で3.0wt%含み、酸化防止剤としてヒンダードフェノール系酸化防止剤を、本発明で規定された範囲内で43.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で31.8wt%含む。 Example 35 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and succinic acid as another organic acid within the range specified in the present invention. It contains 0.2 wt% and contains 45.0 wt% of polymerized rosin as rosin within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, 2-phenylimidazole as an amine is contained in an amount of 5.0 wt% within the range specified in the present invention, and diphenylguanidine / HBr as an amine hydrohalide is 1.0 wt% in the range specified in the present invention. %, And contains 3.0 wt% of trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound within the range specified in the present invention, and hindered phenolic oxidation as an antioxidant. The inhibitor is contained in an amount of 43.0 wt% within the range specified in the present invention, and the balance is a solvent containing tetraethylene glycol monomethyl ether in an amount of 31.8 wt% within the range specified in the present invention.
実施例35でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 35, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例35に示すように、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上、及び、チキソ剤として環状アミド化合物と非環状アミド化合物を、本発明で規定された範囲内で含むことで、本発明で規定された範囲内でアミン、ハロゲン、酸化防止剤を含み、チキソ剤としてさらにエステル化合物を、本発明で規定される範囲内で含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して十分な効果が得られた。 As shown in Example 35, any one or more of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, and cyclic amide compound and acyclic amide compound as thixo agents are used in the present invention. By including within the range specified in the present invention, amines, halogens and antioxidants may be contained within the range specified in the present invention, and further ester compounds as thixo agents may be contained within the range specified in the present invention. Sufficient effects were obtained on the thixophilicity of the flux, the printing sagging suppressing ability of the solder paste, the printing property, the heating sagging suppressing ability, the wet spreading property, and the dewetting suppressing ability.
実施例36は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で35.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で48.0wt%含む。 Example 36 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin at 35.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 48.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例36でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 36, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例37は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で60.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で2.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は4.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で23.0wt%含む。 Example 37 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin at 60.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 4.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 23.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例37でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 37, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例38は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で0.5wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で37.5wt%含む。 Example 38 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in a non-cyclical manner within the range specified in the present invention, and 0 as a ester compound as a thixo agent in hardened sebacic acid within the range specified in the present invention. Includes .5 wt%. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 37.5 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例38でも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 38, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例39は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で0.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で1.0wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は1.5wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.5wt%含む。 Example 39 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 0.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 1.0 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 1.5 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.5 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例39でも、チキソ比が0.30以上0.60未満であり、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 39, the thixotropy ratio was 0.30 or more and less than 0.60, and a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例40は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で1.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で0.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は2.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 Example 40 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 1.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 0.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 2.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例40でも、チキソ比が0.30以上0.60未満であり、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 40, the thixotropy ratio was 0.30 or more and less than 0.60, and a sufficient effect on thixotropy was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例41は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で0.5wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で1.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は2.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 Example 41 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 0.5 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 1.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the non-cyclic amide compound is 2.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例41でも、チキソ比が0.30以上0.60未満であり、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 41, the thixotropy ratio was 0.30 or more and less than 0.60, and a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例42は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で0.1wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は2.6wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で37.4wt%含む。 Example 42 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 0.1 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the acyclic amide compound is 2.6 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 37.4 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例42でも、チキソ比が0.30以上0.60未満であり、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 42, the thixotropy ratio was 0.30 or more and less than 0.60, and a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例43は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で0.3wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で2.5wt%含み、チキソ剤としてのエステル化合物としてヒマシ硬化油を、本発明で規定された範囲内で3.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は2.8wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.2wt%含む。 Example 43 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 0.3 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 2.5 wt% of acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention, and sebacic acid hardening oil as an ester compound as a thixo agent within the range specified in the present invention. Includes 0.0 wt%. The total amount of the cyclic amide compound and the acyclic amide compound is 2.8 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.2 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例43でも、チキソ比が0.30以上0.60未満であり、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 Also in Example 43, the thixotropy ratio was 0.30 or more and less than 0.60, and a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
実施例44は、環状アミド化合物と非環状アミド化合物の添加量を変えたもので、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で0.3wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で8.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は8.3wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で35.7wt%含む。 In Example 44, the addition amounts of the cyclic amide compound and the non-cyclic amide compound were changed, and the dimer acid and hydrogenated dimer acid as the trimer acid were contained in an amount of 5.0 wt% within the range specified in the present invention. Glutalic acid is contained as the organic acid of the above in an amount of 3.0 wt% within the range specified in the present invention, and polymerized rosin is contained as a rosin in the range specified in the present invention in an amount of 45.0 wt%. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 0.3 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 8.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the non-cyclic amide compound is 8.3 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 35.7 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
実施例44では、環状アミド化合物を0.3wt%含むことで、非環状アミド化合物を8wt%含んでも、チキソ性に対して十分な効果が得られた。また、このフラックスを用いたソルダペーストでは、ソルダペーストの印刷ダレの抑制能に対して十分な効果が得られた。更に、印刷性に対して十分な効果が得られた。また、加熱ダレの抑制能に対して十分な効果が得られた。更に、濡れ広がり性に対して十分な効果が得られた。また、ディウェット抑制能に対して十分な効果が得られた。 In Example 44, by containing 0.3 wt% of the cyclic amide compound, even if 8 wt% of the acyclic amide compound was contained, a sufficient effect on thixotropic property was obtained. Further, in the solder paste using this flux, a sufficient effect was obtained on the ability of the solder paste to suppress printing sagging. Further, a sufficient effect on printability was obtained. In addition, a sufficient effect was obtained on the ability to suppress heating sagging. Further, a sufficient effect on wettability was obtained. In addition, a sufficient effect was obtained on the ability to suppress dewet.
これに対し、比較例1は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で0.1wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲外で0.1wt%含む。環状アミド化合物と非環状アミド化合物の合計量は0.2wt%で、本発明で規定される範囲外である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で43.8wt%含む。 On the other hand, Comparative Example 1 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid is specified in the present invention. It contains 3.0 wt% within the above range and contains 45.0 wt% of polymerized rosin as the rosin within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 0.1 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 0.1 wt% of the acyclic amide compound polycondensed in an acyclic manner outside the range specified in the present invention. The total amount of the cyclic amide compound and the non-cyclic amide compound is 0.2 wt%, which is outside the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains tetraethylene glycol monomethyl ether with the balance as a solvent in an amount of 43.8 wt% within the range specified in the present invention.
環状アミド化合物の含有量が、本発明で規定される範囲内であっても、非環状アミド化合物の含有量が、本発明で規定される範囲未満であり、環状アミド化合物と非環状アミド化合物の合計量が、本発明で規定される範囲未満である比較例1では、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能に対して効果が得られなかった。 Even if the content of the cyclic amide compound is within the range specified in the present invention, the content of the acyclic amide compound is less than the range specified in the present invention, and the cyclic amide compound and the acyclic amide compound In Comparative Example 1 in which the total amount was less than the range specified in the present invention, no effect was obtained on the thixo property of the flux, the printing sagging suppressing ability of the solder paste, the printing property, and the heating sagging suppressing ability.
比較例2は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で0.1wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で0.5wt%含む。但し、環状アミド化合物と非環状アミド化合物の合計量は0.6wt%で、本発明で規定される範囲外である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で43.4wt%含む。 Comparative Example 2 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 0.1 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 0.5 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. However, the total amount of the cyclic amide compound and the non-cyclic amide compound is 0.6 wt%, which is outside the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains tetraethylene glycol monomethyl ether as a solvent in the balance of 43.4 wt% within the range specified in the present invention.
環状アミド化合物及び非環状アミド化合物の含有量が、本発明で規定される範囲内であっても、環状アミド化合物と非環状アミド化合物の合計量が、本発明で規定される範囲未満である比較例2では、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能に対して効果が得られなかった。 Comparison in which the total amount of the cyclic amide compound and the acyclic amide compound is less than the range specified in the present invention even if the contents of the cyclic amide compound and the acyclic amide compound are within the range specified in the present invention. In Example 2, no effect was obtained on the thixo property of the flux, the printing sagging suppressing ability of the solder paste, the printing property, and the heating sagging suppressing ability.
比較例3は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、環状アミド化合物を含まず、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲外で15.0wt%含む。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で29.0wt%含む。 Comparative Example 3 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, as the thixotropy, 15.0 wt% of acyclic amide compound in which sebacic acid and 1,6-hexanediamine are polycondensed in an acyclic manner is contained outside the range specified in the present invention without containing a cyclic amide compound. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 29.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
環状アミド化合物を含まない比較例3では、非環状アミド化合物の添加量を、本発明で規定される範囲を超えて増やすことで、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、加熱ダレ抑制能に対して効果が得られたが、ソルダペーストの印刷性に対して効果が得られなかった。 In Comparative Example 3 containing no cyclic amide compound, by increasing the amount of the acyclic amide compound added beyond the range specified in the present invention, the flux property, the solder paste printing sagging ability, and the heating sagging suppressing ability were suppressed. An effect was obtained on the ability, but no effect was obtained on the printability of the solder paste.
比較例4は、ダイマー酸、トリマー酸として水添ダイマー酸を、本発明で規定される範囲内で5.0wt%含み、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で45.0wt%含む。また、チキソ剤として、環状アミド化合物、非環状アミド化合物を含まず、エステル化合物としてのヒマシ硬化油を、本発明で規定された範囲内で5.0wt%含む。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で39.0wt%含む。 Comparative Example 4 contains 5.0 wt% of hydrogenated dimer acid as dimer acid and trimer acid within the range specified in the present invention, and glutaric acid as another organic acid within the range specified in the present invention. It contains 3.0 wt% and contains polymerized rosin as rosin in an amount of 45.0 wt% within the range specified in the present invention. Further, the thixotropy does not contain a cyclic amide compound or a non-cyclic amide compound, and contains 5.0 wt% of hydrogenated castor oil as an ester compound within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 39.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
環状アミド化合物、非環状アミド化合物を含まない比較例4では、チキソ剤としてエステル化合物を、本発明で規定される範囲内で含むことで、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性に対して効果が得られたが、ソルダペーストの加熱ダレ抑制能に対して効果が得られなかった。 In Comparative Example 4 which does not contain the cyclic amide compound and the non-cyclic amide compound, by containing the ester compound as the thixo agent within the range specified in the present invention, the tyxo property of the flux, the ability to suppress printing sagging of the solder paste, and printing An effect was obtained on the sex, but no effect was obtained on the ability of the solder paste to suppress heating sagging.
比較例5は、ダイマー酸、トリマー酸を含まず、他の有機酸としてグルタル酸を、本発明で規定される範囲内で3.0wt%含み、ロジンとして重合ロジンを、本発明で規定される範囲内で50.0wt%含む。また、チキソ剤として、セバシン酸と1,6−ヘキサンジアミンが環状に重縮合した環状アミド化合物を、本発明で規定される範囲内で2.0wt%含み、セバシン酸と1,6−ヘキサンジアミンが非環状に重縮合した非環状アミド化合物を、本発明で規定された範囲内で4.0wt%含む。環状アミド化合物と非環状アミド化合物の合計量は6.0wt%で、本発明で規定される範囲内である。更に、アミンとして2−フェニルイミダゾールを、本発明で規定される範囲内で2.0wt%含み、有機ハロゲン化合物としてtrans−2,3−ジブロモ−2−ブテン−1,4−ジオールを、本発明で規定される範囲内で1.0wt%含み、残部を溶剤としてテトラエチレングリコールモノメチルエーテルを、本発明で規定された範囲内で38.0wt%含む。 Comparative Example 5 does not contain dimer acid and trimer acid, contains glutaric acid as another organic acid in an amount of 3.0 wt% within the range specified in the present invention, and contains polymerized rosin as a rosin in the present invention. Includes 50.0 wt% within the range. Further, as a thixo agent, a cyclic amide compound obtained by cyclically polycondensing sebacic acid and 1,6-hexanediamine is contained in an amount of 2.0 wt% within the range specified in the present invention, and sebacic acid and 1,6-hexanediamine are contained. Contains 4.0 wt% of the acyclic amide compound polycondensed in an acyclic manner within the range specified in the present invention. The total amount of the cyclic amide compound and the acyclic amide compound is 6.0 wt%, which is within the range specified in the present invention. Further, the present invention contains 2-phenylimidazole as an amine in an amount of 2.0 wt% within the range specified in the present invention, and trans-2,3-dibromo-2-butene-1,4-diol as an organic halogen compound. It contains 1.0 wt% within the range specified in the present invention, and contains 38.0 wt% of tetraethylene glycol monomethyl ether using the balance as a solvent within the range specified in the present invention.
ダイマー酸、トリマー酸を含まない比較例5では、濡れ広がり性、ディウェット抑制能に対して効果が得られなかった。 In Comparative Example 5 containing no dimer acid or trimer acid, no effect was obtained on the wettability and the ability to suppress dewetting.
なお、チキソ剤が、ジカルボン酸としてマロン酸、コハク酸、グルタル酸、ピメリン酸、スベリン酸、アゼライン酸、シクロヘキサンジカルボン酸、フタル酸またはテレフタル酸等を使用した環状アミド化合物、非環状アミド化合物を含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能に対して十分な効果が得られた。 The thixo agent contains a cyclic amide compound and a non-cyclic amide compound using malonic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, azelaic acid, cyclohexanedicarboxylic acid, phthalic acid, terephthalic acid and the like as dicarboxylic acids. In particular, sufficient effects were obtained on the pimelic acidity of the flux, the printing sagging suppressing ability of the solder paste, the printing property, and the heating sagging suppressing ability.
また、チキソ剤が、トリカルボン酸としてシクロヘキサントリカルボン酸、ベンゼントリカルボン酸等を使用した環状アミド化合物、非環状アミド化合物を含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能に対して十分な効果が得られた。 Further, when the thixo agent contains a cyclic amide compound or a non-cyclic amide compound using cyclohexanetricarboxylic acid, benzenetricarboxylic acid or the like as the tricarboxylic acid, the thixo property of the flux, the ability to suppress printing sagging of the solder paste, the printability, and the heating A sufficient effect was obtained on the ability to suppress sagging.
更に、チキソ剤が、ジアミンとしてエチレンジアミン、1,3−ジアミノプロパン、1,4−ジアミノブタン、ダイマージアミン、フェニレンジアミン、メタキシリレンジアミン、パラキシリレンジアミン、2,4−ジアミノトルエン等を使用した環状アミド化合物、非環状アミド化合物を含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能に対して十分な効果が得られた。 Further, as the thixo agent, ethylenediamine, 1,3-diaminopropane, 1,4-diaminobutane, dimer diamine, phenylenediamine, m-xylylenediamine, paraxylylenediamine, 2,4-diaminotoluene and the like were used as diamines. Even when the cyclic amide compound and the non-cyclic amide compound were contained, sufficient effects were obtained on the thixo property of the flux, the print sagging suppressing ability of the solder paste, the printability, and the heating sagging suppressing ability.
また、チキソ剤が、トリアミンとしてトリアミノシクロヘキサン、トリマートリアミン等を使用した環状アミド化合物、非環状アミド化合物を含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能に対して十分な効果が得られた。 Further, even if the thixotropy contains a cyclic amide compound or a non-cyclic amide compound using triaminocyclohexane, trimertriamine or the like as the triamine, the thixotropy of the flux, the ability to suppress the printing sagging of the solder paste, the printability, and the suppression of the heating sagging A sufficient effect was obtained on the ability.
更に、チキソ剤が、モノカルボン酸として酢酸、パルミチン酸、ステアリン酸、12−ヒドロキシステアリン酸、ベヘン酸、モンタン酸等を使用した非環状アミド化合物を含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能に対して十分な効果が得られた。 Further, the thixo agent also contains an acyclic amide compound using acetic acid, palmitic acid, stearic acid, 12-hydroxystearic acid, behenic acid, montanic acid, etc. as the monocarboxylic acid, which makes the flux thixo property and solder paste. Sufficient effects were obtained on the ability to suppress print sagging, printability, and ability to suppress heat sagging.
また、チキソ剤が、モノアミンとしてアンモニア、エチルアミン、ヘキシルアミン、オクチルアミン、ステアリルアミン等を使用した非環状アミド化合物を含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能に対して十分な効果が得られた。 Further, even if the thixo agent contains an acyclic amide compound using ammonia, ethylamine, hexylamine, octylamine, stearylamine or the like as the monoamine, the thixo property of the flux, the ability to suppress the printing sagging of the solder paste, the printability, and the heating A sufficient effect was obtained on the ability to suppress sagging.
更に、チキソ剤が、ラクタムを開環重合した非環状アミド化合物を含むことでも、フラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能に対して十分な効果が得られた。 Furthermore, even if the thixotropy contains a non-cyclic amide compound obtained by ring-opening polymerization of lactam, sufficient effects can be obtained on the thixotropic property of the flux, the printing sagging suppressing ability of the solder paste, the printing property, and the heating sagging suppressing ability. It was.
<ソルダペーストの増粘抑制効果の評価>
上述した各実施例のフラックスと、以下の表4に示す組成のはんだ合金を使用して調合したソルダペーストの増粘抑制効果についても検証した。
<Evaluation of the thickening inhibitory effect of solder paste>
The effect of suppressing thickening of the solder paste prepared by using the flux of each of the above-mentioned examples and the solder alloy having the composition shown in Table 4 below was also verified.
(1)検証方法
得られたソルダペーストについて、JIS Z 3284−3の「4.2 粘度特性試験」に記載された方法に従って、回転粘度計(PCU−205、株式会社マルコム製)を用い、回転数:10rpm、測定温度:25℃にて、粘度を12時間測定し続けた。そして、初期粘度(撹拌30分後の粘度)と12時間後の粘度とを比較し、以下の基準に基づいて増粘抑制効果の評価を行った。
(2)判定基準
〇:13時間後の粘度≦初期粘度×1.2:経時での粘度上昇が小さく良好
×:13時間後の粘度>初期粘度×1.2:経時での粘度上昇が大きく不良
(1) Verification method The obtained solder paste was rotated using a rotational viscometer (PCU-205, manufactured by Malcolm Co., Ltd.) according to the method described in "4.2 Viscosity Characteristics Test" of JIS Z 3284-3. The viscosity was continuously measured for 12 hours at a number: 10 rpm and a measurement temperature: 25 ° C. Then, the initial viscosity (viscosity after 30 minutes of stirring) and the viscosity after 12 hours were compared, and the thickening suppressing effect was evaluated based on the following criteria.
(2) Judgment criteria 〇: Viscosity after 13 hours ≤ Initial viscosity × 1.2: Viscosity increase over time is small and good ×: Viscosity after 13 hours> Initial viscosity × 1.2: Viscosity increase over time is large Bad
表1〜表3に示す各実施例のフラックスと、上記の数(1)式及び数(2)式を満たす表4に示す各実施例のはんだ合金を使用したソルダペーストでは、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に加えて、増粘抑制効果に対して十分な効果が得られた。 In the solder paste using the flux of each example shown in Tables 1 to 3 and the solder alloy of each example shown in Table 4 satisfying the above equations (1) and (2), the solder paste is printed. In addition to the ability to suppress dripping, printability, suppressing dripping by heating, spreading wetness, and suppressing dewetting, a sufficient effect on the thickening suppressing effect was obtained.
これに対し、表1〜表3に示す各実施例のフラックスと、上記の数(1)式及び数(2)式を満たさない表4に示す各比較例のはんだ合金を使用したソルダペーストでは、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレ抑制能、濡れ広がり性、ディウェット抑制能に対して効果が得られたが、増粘抑制効果に対して効果が得られなかった。 On the other hand, in the solder paste using the flux of each example shown in Tables 1 to 3 and the solder alloy of each comparative example shown in Table 4 which does not satisfy the above equations (1) and (2). , The effect was obtained on the printing sagging suppressing ability, the printing property, the heating sagging suppressing ability, the wetting spreading property, and the dewetting suppressing ability of the solder paste, but the effect was not obtained on the thickening suppressing effect.
以上のことから、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上と、チキソ剤と、ロジンと、溶剤を含み、チキソ剤は、ジカルボン酸及び/またはトリカルボン酸とジアミン及び/またはトリアミンが環状に重縮合した環状アミド化合物と、モノカルボン酸、ジカルボン酸及び/またはトリカルボン酸とモノアミン、ジアミン及び/またはトリアミンが非環状に重縮合した非環状アミド化合物、または、ラクタムを開環重合した非環状アミド化合物からなり、環状アミド化合物は、ジカルボン酸及びトリカルボン酸の炭素数が3以上10以下、ジアミン及びトリアミンの炭素数が2以上54以下であり、非環状アミド化合物は、モノカルボン酸、ジカルボン酸及びトリカルボン酸の炭素数が2以上28以下、モノアミン、ジアミン及びトリアミンの炭素数が0以上54以下であり、環状アミド化合物を0.1wt%以上8.0wt%以下、より好ましくは、環状アミド化合物を0.5wt%以上1.5wt%以下、非環状アミド化合物を0.5wt%以上8.0wt%以下、より好ましくは、非環状アミド化合物を0.5wt%以上4.0wt%以下含み、かつ、環状アミド化合物と非環状アミド化合物の合計が1.5wt%以上10.0wt%以下である本発明に係るフラックスでは、チキソ剤が非環状アミド化合物からなる場合と比較して、非環状アミド化合物の含有量を増やすことなく、チキソ性を向上させることができ、チキソ剤の析出を抑制することができた。 From the above, any one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, a thixo agent, a rosin, and a solvent are contained, and the thixo agent is a dicarboxylic acid and /. Alternatively, a cyclic amide compound in which tricarboxylic acid and diamine and / or triamine are cyclically polycondensed, and a cyclic amide compound in which monocarboxylic acid, dicarboxylic acid and / or tricarboxylic acid and monoamine, diamine and / or triamine are cyclically polycondensed. Or, it is composed of a non-cyclic amide compound obtained by ring-opening polymerization of lactam, and the cyclic amide compound has 3 or more and 10 or less carbon atoms of dicarboxylic acid and tricarboxylic acid, and 2 or more and 54 or less carbon atoms of diamine and triamine. The cyclic amide compound has a monocarboxylic acid, a dicarboxylic acid and a tricarboxylic acid having a carbon number of 2 or more and 28 or less, a monoamine, a diamine and a triamine having a carbon number of 0 or more and 54 or less, and the cyclic amide compound is 0.1 wt% or more and 8. 0 wt% or less, more preferably 0.5 wt% or more and 1.5 wt% or less of the cyclic amide compound, 0.5 wt% or more and 8.0 wt% or less of the acyclic amide compound, more preferably 0 wt% or less of the acyclic amide compound. In the flux according to the present invention, which contains 5 wt% or more and 4.0 wt% or less and the total of the cyclic amide compound and the acyclic amide compound is 1.5 wt% or more and 10.0 wt% or less, the thixo agent is derived from the acyclic amide compound. As compared with the case of, the thixo property could be improved without increasing the content of the acyclic amide compound, and the precipitation of the thixo agent could be suppressed.
このフラックスを用いたソルダペーストでは、にじみ、かすれ等が抑制された良好な印刷性を得ることができ、また、印刷後のソルダペーストが流れる印刷ダレを抑制することができた。更に、はんだ付け時の加熱によるソルダペーストの加熱ダレを抑制することができた。 With the solder paste using this flux, it was possible to obtain good printability in which bleeding, blurring, etc. were suppressed, and it was possible to suppress printing sagging in which the solder paste flows after printing. Furthermore, it was possible to suppress the heating sagging of the solder paste due to heating during soldering.
また、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上を0.5wt%以上20wt%以下含むことで、熱負荷の大きい条件下でも良好な濡れ広がりを示し、かつディウェットの発生を抑制することができることが判り、どのような熱履歴でも安定して仕上がりのよいはんだ付けが可能となるフラックスを提供できた。 Further, by containing any one of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, or two or more kinds of 0.5 wt% or more and 20 wt% or less, good wet spread spreads even under a large heat load condition. It was found that the occurrence of dewetting can be suppressed, and it was possible to provide a flux that enables stable and good-finished soldering regardless of the thermal history.
さらに、本発明に係るフラックスは、チキソ剤としてエステル化合物を0wt%以上8.0wt%以下、より好ましくは、エステル化合物を0wt%以上4.0wt%以下、ロジンを30.0wt%以上60.0wt%以下、より好ましくは、ロジンを35.0wt%以上60.0wt%以下、他の有機酸を0wt%以上10.0wt%以下、より好ましくは、他の有機酸を0.2wt%以上5.0wt%以下、アミンを0wt%以上20.0wt%以下、より好ましくは、アミンを0wt%以上5.0wt%以下、有機ハロゲン化合物を0wt%以上5.0wt%以下、アミンハロゲン化水素酸塩を0wt%以上2.0wt%以下、酸化防止剤を0wt%以上5.0wt%以下で含み、残部が溶剤である。このような組成とすることで、チキソ剤に環状アミド化合物と非環状アミド化合物を含むことによるフラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレの抑制能、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上を含むことによる濡れ広がり性、ディウェット抑制能が阻害されず、これらに対して十分な効果が得られた。 Further, the flux according to the present invention contains 0 wt% or more and 8.0 wt% or less of the ester compound as a thiox agent, more preferably 0 wt% or more and 4.0 wt% or less of the ester compound, and 30.0 wt% or more and 60.0 wt% of the rosin. % Or less, more preferably 35.0 wt% or more and 60.0 wt% or less of rosin, 0 wt% or more and 10.0 wt% or less of other organic acids, and more preferably 0.2 wt% or more of other organic acids. 0 wt% or less, amine 0 wt% or more and 20.0 wt% or less, more preferably amine 0 wt% or more and 5.0 wt% or less, organic halogen compound 0 wt% or more and 5.0 wt% or less, amine halide hydride. It contains 0 wt% or more and 2.0 wt% or less, an antioxidant in 0 wt% or more and 5.0 wt% or less, and the balance is a solvent. With such a composition, the thixo agent contains a cyclic amide compound and a non-cyclic amide compound, so that the flux has a thixo property, a solder paste has a printing sagging ability, a printing property, a heating sagging suppressing ability, a dimer acid, and water. The wet spreading property and the ability to suppress dewetting were not inhibited by containing any one of the added dimer acid, trimer acid, and hydrogenated trimer acid, or two or more kinds, and a sufficient effect was obtained for these.
さらに、このフラックスと、As:25質量ppm以上300質量ppm以下、並びにSb:0質量ppm超3000質量ppm以下、Bi:0質量ppm超10000質量ppm以下、及びPb:0質量ppm超5100質量ppm以下の少なくとも1種、及びAg:0質量%以上4質量%以下、Cu:0質量%以上0.9質量%以下並びに残部がSnからなり、かつ、上記の数(1)式及び数(2)式を満たすはんだ合金を用いたソルダペーストでは、チキソ剤に環状アミド化合物と非環状アミド化合物を含むことによるフラックスのチキソ性、ソルダペーストの印刷ダレ抑制能、印刷性、加熱ダレの抑制能、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸のいずれか、あるいは、2種以上を含むことによる濡れ広がり性、ディウェット抑制能が阻害されず、増粘抑制効果に対して十分な効果が得られた。 Further, this flux and As: 25 mass ppm or more and 300 mass ppm or less, Sb: 0 mass ppm or more and 3000 mass ppm or less, Bi: 0 mass ppm or more and 10000 mass ppm or less, and Pb: 0 mass ppm or more and 5100 mass ppm or less. At least one of the following, Ag: 0% by mass or more and 4% by mass or less, Cu: 0% by mass or more and 0.9% by mass or less, and the balance consisting of Sn, and the above equation (1) and number (2). ) In the solder paste using a solder alloy satisfying the formula, the texos property of the flux due to the inclusion of the cyclic amide compound and the non-cyclic amide compound in the thixo agent, the ability to suppress the printing sagging of the solder paste, the printability, the ability to suppress the heating sagging, The wet spreadability and the ability to suppress dewetting are not inhibited by containing any one or more of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, which is sufficient for the thickening suppressing effect. The effect was obtained.
そこで、本発明は、モノカルボン酸の反応物で2量体であるダイマー酸、ダイマー酸に水素を添加した水添ダイマー酸、モノカルボン酸の反応物で3量体であるトリマー酸、トリマー酸に水素を添加した水添トリマー酸の何れか、あるいは、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の2種以上と、ロジンと、チキソ剤と、溶剤を含み、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の何れか、あるいは、ダイマー酸、水添ダイマー酸、トリマー酸、水添トリマー酸の2種以上を0.5wt%以上20wt%以下含み、チキソ剤は、環状アミド化合物と非環状アミド化合物からなり、環状アミド化合物を0.1wt%以上8.0wt%以下、非環状アミド化合物を0.5wt%以上8.0wt%以下で含み、かつ、環状アミド化合物と非環状アミド化合物の合計が1.5wt%以上10.0wt%以下であり、環状アミド化合物は、ジカルボン酸及び/またはトリカルボン酸と、ジアミン及び/またはトリアミンが環状に重縮合した分子量が3000以下のアミド化合物であり、非環状アミド化合物は、モノカルボン酸、ジカルボン酸及び/またはトリカルボン酸と、モノアミン、ジアミン及び/またはトリアミンが非環状に縮合したアミド化合物であるフラックスである。 Therefore, in the present invention, a dimer acid which is a reaction product of a monocarboxylic acid and is a dimer acid, a hydrogenated dimer acid obtained by adding hydrogen to a dimer acid, and a trimeric acid and a trimer acid which are a trimer of a reaction product of a monocarboxylic acid. Dimeric acid, which contains one of hydrogenated trimeric acids, or two or more of dimeric acid, hydrogenated dimeric acid, trimeric acid, hydrogenated trimeric acid, rosin, thixo agent, and solvent . A thixo agent containing 0.5 wt% or more and 20 wt% or less of any one of hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid, or two or more kinds of dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid. Consists of a cyclic amide compound and an acyclic amide compound, containing a cyclic amide compound in an amount of 0.1 wt% or more and 8.0 wt% or less, a non-cyclic amide compound in an amount of 0.5 wt% or more and 8.0 wt% or less, and a cyclic amide. The total of the compound and the acyclic amide compound is 1.5 wt% or more and 10.0 wt% or less, and the cyclic amide compound has a molecular weight of 3000 in which dicarboxylic acid and / or tricarboxylic acid and diamine and / or triamine are cyclically polycondensed. The following amide compounds, the acyclic amide compound is a flux which is an amide compound in which a monocarboxylic acid, a dicarboxylic acid and / or a tricarboxylic acid and a monoamine, a diamine and / or a triamine are acyclically condensed.
また、ロジンを30wt%以上60wt%以下含むことが好ましい。
It is also preferred to include a rosin less 30 wt% or more 60 wt%.
Claims (16)
チキソ剤は、環状アミド化合物と非環状アミド化合物からなり、環状アミド化合物を0.1wt%以上8.0wt%以下、非環状アミド化合物を0.5wt%以上8.0wt%以下で含み、かつ、環状アミド化合物と非環状アミド化合物の合計が1.5wt%以上10.0wt%以下であり、
環状アミド化合物は、ジカルボン酸及び/またはトリカルボン酸と、ジアミン及び/またはトリアミンが環状に重縮合した分子量が3000以下のアミド化合物であり、
非環状アミド化合物は、モノカルボン酸、ジカルボン酸及び/またはトリカルボン酸と、モノアミン、ジアミン及び/またはトリアミンが非環状に縮合したアミド化合物である
ことを特徴とするフラックス。 Dimeric acid, which is a reaction product of monocarboxylic acid, dimer acid which is a dimer, hydrogenated dimer acid which is hydrogenated dimer acid, trimeric acid which is a trimer acid which is a reactant of monocarboxylic acid, and water which is hydrogenated to trimer acid. Contains any of the added trimer acids, or two or more of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, rosin, thixo agent, and solvent.
The thixo agent is composed of a cyclic amide compound and an acyclic amide compound, and contains a cyclic amide compound in an amount of 0.1 wt% or more and 8.0 wt% or less and an acyclic amide compound in an amount of 0.5 wt% or more and 8.0 wt% or less. The total of the cyclic amide compound and the non-cyclic amide compound is 1.5 wt% or more and 10.0 wt% or less.
The cyclic amide compound is an amide compound having a molecular weight of 3000 or less in which a dicarboxylic acid and / or a tricarboxylic acid and a diamine and / or a triamine are cyclically polycondensed.
The acyclic amide compound is a flux characterized by being an amide compound in which a monocarboxylic acid, a dicarboxylic acid and / or a tricarboxylic acid and a monoamine, a diamine and / or a triamine are acyclically condensed.
ことを特徴とする請求項1に記載のフラックス。 The flux according to claim 1, wherein the cyclic amide compound has a dicarboxylic acid and a tricarboxylic acid having 3 or more and 10 or less carbon atoms.
ことを特徴とする請求項1に記載のフラックス。 The flux according to claim 1, wherein the cyclic amide compound has 6 or more and 10 or less carbon atoms of the dicarboxylic acid and the tricarboxylic acid.
ことを特徴とする請求項2または請求項3に記載のフラックス。 The flux according to claim 2 or 3, wherein the cyclic amide compound has 2 or more and 54 or less carbon atoms of diamine and triamine.
ことを特徴とする請求項2または請求項3に記載のフラックス。 The flux according to claim 2 or 3, wherein the cyclic amide compound has 6 carbon atoms in the diamine and the triamine.
ことを特徴とする請求項1に記載のフラックス。 The flux according to claim 1, wherein the cyclic amide compound is an amide compound in which a dicarboxylic acid having 3 or more and 10 or less carbon atoms and a diamine having 2 or more and 54 carbon atoms or less are cyclically polycondensed.
ことを特徴とする請求項1に記載のフラックス。 The flux according to claim 1, wherein the cyclic amide compound is an amide compound in which a dicarboxylic acid having 6 or more and 10 or less carbon atoms and a diamine having 6 carbon atoms are cyclically polycondensed.
非環状アミド化合物は、モノカルボン酸、ジカルボン酸及びトリカルボン酸の炭素数が2以上28以下、モノアミン、ジアミン及びトリアミンの炭素数が0以上54以下である
ことを特徴とする請求項1に記載のフラックス。 The cyclic amide compound has a dicarboxylic acid and a tricarboxylic acid having a carbon number of 3 or more and 10 or less, and a diamine and a triamine having a carbon number of 2 or more and 54 or less.
The non-cyclic amide compound according to claim 1, wherein the monocarboxylic acid, the dicarboxylic acid and the tricarboxylic acid have 2 or more and 28 or less carbon atoms, and the monoamine, diamine and triamine have 0 or more and 54 or less carbon atoms. flux.
ことを特徴とする請求項1〜請求項8の何れか1項に記載のフラックス。 The flux according to any one of claims 1 to 8, wherein the thixotropy further contains an ester compound.
ことを特徴とする請求項9に記載のフラックス。 The flux according to claim 9, wherein the thixotropy contains hydrogenated castor oil as an ester compound.
ことを特徴とする請求項1に記載のフラックス。 The flux according to claim 1, wherein the thixotropy contains 0.5 wt% or more and 1.5 wt% or less of the cyclic amide compound and 0.5 wt% or more and 4.0 wt% or less of the acyclic amide compound.
ことを特徴とする請求項9または請求項10に記載のフラックス。 The flux according to claim 9 or 10, wherein the thixotropy contains 0 wt% or more and 8.0 wt% or less of the ester compound.
ことを特徴とする請求項1〜請求項12の何れか1項に記載のフラックス。 Contains 0.5 wt% or more and 20 wt% or less of any one of dimer acid, hydrogenated dimer acid, trimer acid, hydrogenated trimer acid, or two or more kinds of dimer acid, hydrogenated dimer acid, trimer acid and hydrogenated trimer acid. The flux according to any one of claims 1 to 12, wherein the flux is characterized by the above.
ことを特徴とする請求項1〜請求項13の何れか1項に記載のフラックス。 The flux according to any one of claims 1 to 13, wherein the flux contains rosin in an amount of 30 wt% or more and 60 wt% or less.
アミンを0wt%以上20wt%、
有機ハロゲン化合物を0wt%以上5wt%以下、
アミンハロゲン化水素酸塩を0wt%以上2wt%以下、
酸化防止剤を0wt%以上5wt%以下含む
ことを特徴とする請求項1〜請求項14の何れか1項に記載のフラックス。 Furthermore, organic acids other than dimer acid, hydrogenated dimer acid, trimer acid, and hydrogenated trimer acid are added in an amount of 0 wt% or more and 10 wt% or less.
Amine is 0 wt% or more and 20 wt%,
Organic halogen compounds 0 wt% or more and 5 wt% or less,
Amine halide hydrohydrate from 0 wt% to 2 wt%,
The flux according to any one of claims 1 to 14, wherein the flux contains 0 wt% or more and 5 wt% or less of an antioxidant.
ことを特徴とするソルダペースト。 A solder paste comprising the flux according to any one of claims 1 to 15 and a metal powder.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1177377A (en) * | 1997-09-08 | 1999-03-23 | Sanei Kagaku Kk | Flux composition |
JP2014036985A (en) * | 2012-08-16 | 2014-02-27 | Tamura Seisakusho Co Ltd | Solder composition and printed wiring board using the same |
JP2017177166A (en) * | 2016-03-30 | 2017-10-05 | 株式会社タムラ製作所 | Solder composition for jet dispenser |
JP6477842B1 (en) * | 2017-11-24 | 2019-03-06 | 千住金属工業株式会社 | Flux and solder paste |
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JPH1177377A (en) * | 1997-09-08 | 1999-03-23 | Sanei Kagaku Kk | Flux composition |
JP2014036985A (en) * | 2012-08-16 | 2014-02-27 | Tamura Seisakusho Co Ltd | Solder composition and printed wiring board using the same |
JP2017177166A (en) * | 2016-03-30 | 2017-10-05 | 株式会社タムラ製作所 | Solder composition for jet dispenser |
JP6477842B1 (en) * | 2017-11-24 | 2019-03-06 | 千住金属工業株式会社 | Flux and solder paste |
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