JP2020140177A - Optical sensor module - Google Patents

Abstract

To provide an optical sensor module with a small amount of ghost image.SOLUTION: An optical sensor module 1 comprises a near-infrared absorption filter 4 including a near-infrared absorption layer between an optical sensor 5 and an optical filter 3 transmitting light of at least part of wavelength of wavelengths 800-1200 nm. When a wavelength, among light incident from a vertical direction of the optical filter, having the highest transmissivity in wavelengths 800-1200 nm is denoted by λOMAX (nm), an average value of transmissivities of light incident from the vertical direction of the near-infrared absorption filter in wavelengths (λOMAX-15) nm to (λOMAX+15) nm is 20-85%.SELECTED DRAWING: Figure 1

Description

The present invention relates to an optical sensor module.

In recent years, as mobile information terminal devices such as smartphones, tablet terminals, wearable devices, advanced driver assistance systems, autonomous driving systems, aircraft, unmanned aircraft (drone), robots, agricultural machinery, medical equipment, etc. Taking advantage of the invisible advantage of the human eye, the development of optical sensor devices such as various optical image pickup devices having an optical sensor module using near infrared rays is underway.

Applications of such optical sensor devices are being studied for various purposes, such as space recognition applications such as distance measurement, motion recognition applications, individual identification, face authentication, iris authentication, retina authentication, and vein authentication. These include security applications, pulse measurement, blood oxygen concentration measurement, healthcare applications such as stress check of the person to be measured, quality inspection of agricultural products and fruits, and agricultural applications such as detection of growth degree.

For example, it is disclosed that visible light is cut and near infrared rays of a specific wavelength are transmitted by an optical filter provided with a dielectric multilayer film in which high refractive index materials and low refractive index materials are alternately laminated on a glass substrate. (See, for example, Patent Document 1).

An optical filter that transmits light of a specific wavelength by a dielectric multilayer film as described in Patent Document 1 has a narrow transition region between a blocking wavelength and a transmitting wavelength, and can cut sharply. However, in an optical image pickup device or sensor in which only an optical filter having such a dielectric multilayer film formed is incorporated between a lens and an optical sensor, light may be incident on the optical filter from the optical sensor side. In this case, due to the high reflectance of the optical filter, the light incident on the optical filter is reflected by the optical filter, and ghosts are generated by the optical path 13 as shown in FIG. 3A. I found out that

Further, the ghost due to the optical path 13 as shown in FIG. 3A is reflected between the optical sensor surface and the optical filter, specifically, after passing through the optical filter, reflected on the optical sensor surface and transmitted through the optical filter. This is due to the reflected light that is incident on the optical filter again at a different angle than when it was used. Therefore, it is expected that such ghosts will be reduced by using an optical filter that transmits near infrared rays of a specific wavelength with little dependence on the incident angle.

As an optical filter that transmits near infrared rays of a specific wavelength with little dependence on the incident angle, for example, an optical filter having a multilayer film containing amorphous silicon (see, for example, Patent Document 2), and a high refractive index in a dielectric multilayer film. An optical filter designed with a large proportion of layers (see, for example, Patent Documents 3 and 4), a filter structure in which an interference type filter and an absorption type filter are provided on a substrate (see, for example, Patent Document 5), and a specific compound. An optical filter having a resin layer containing the resin layer and a dielectric multilayer film (for example, Patent Document 6) is known.

Japanese Unexamined Patent Publication No. 2015-184627 U.S. Patent Application Publication No. 2017/0336544 Japanese Unexamined Patent Publication No. 2015-11241 International Publication No. 2013/015303 JP-A-2018-194809 International Publication No. 2017/213047

In recent years, mobile information terminal devices, which are rapidly becoming smaller and lighter, automatic driving systems, aircraft, unmanned aerial vehicles, robots, etc., are often used outdoors, and objects that are farther away can be used. It may be imaged and detected, in which case it may be necessary to set the sensor sensitivity to high sensitivity. The sensor sensitivity to near infrared rays is often higher than the sensor sensitivity to visible light, and when the sensor sensitivity is set to high sensitivity in this way, even smaller ghosts are more likely to be detected.

When only the conventional optical filter was used for the optical sensor module, ghosting was likely to occur and the ghost intensity was high. When an optical sensor module in which such a ghost occurs is used, a misidentification different from the correct detection occurs, so that it may not be suitable for the above-mentioned application.

The present invention has been made in view of the above, and an object of the present invention is to provide an optical sensor module having a small amount of ghost.

As a result of diligent studies to solve the above-mentioned problems, the present inventors have found that the above-mentioned problems can be solved according to the following configuration example, and have completed the present invention. A configuration example of the present invention is shown below.

[1] A near-infrared absorbing filter having a near-infrared absorbing layer is provided between an optical sensor and an optical filter that transmits light having at least a part of wavelengths of 800 to 1200 nm.
When the wavelength of the highest transmittance of the light incident from the vertical direction of the optical filter is λO _MAX (nm) at a wavelength of 800 to 1200 nm,
The average value of the transmittance of light incident from the vertical direction of the near-infrared absorbing filter at wavelengths (λO _MAX -15) nm to (λO _MAX +15) nm is 20 to 85%.
Optical sensor module.

[2] The optical sensor module according to [1], wherein the near-infrared absorbing filter satisfies the following requirement (1).
Requirement (1): The average value of the reflectance of light incident on the near-infrared absorbing filter from the optical sensor side at an angle of 30 ° at wavelengths (λO _MAX -15) nm to (λO _MAX +15) nm is 7. %Less than

[3] The optical sensor module according to [1] or [2], wherein the optical filter satisfies the following requirement (3).
Requirement (3): The average value of the transmittance of light incident from the vertical direction of the optical filter at a wavelength of 400 nm to (λO _MAX -30) nm is 5% or less.

[4] The optical sensor module according to any one of [1] to [3], wherein the optical filter satisfies the following requirement (4).
Requirement (4): The average value of the transmittance of light incident from the vertical direction of the optical filter at a wavelength (λO _MAX +40) nm to 1250 nm is 5% or less.

[5] The method according to any one of [1] to [4], wherein the optical sensor side of the optical filter has an antireflection layer for preventing reflection of light having at least a part of wavelengths of 800 to 1200 nm. Optical sensor module.

[6] Let the value of the transmittance of light incident from the vertical direction of the optical filter at the λO _MAX [nm] be TO (λO _MAX ) [× 100%].
When the transmittance of light incident from the vertical direction of the near-infrared absorbing filter at the λO _MAX [nm] is set to TA (λO _MAX ) [× 100%].
TO (λO _MAX ) × TA (λO _MAX ) is 0.15 to 0.85,
The optical sensor module according to any one of [1] to [5].

[7] The optical sensor module according to any one of [1] to [6], which has a space between the optical sensor and the near-infrared absorbing filter.

[8] The wavelength .lamda.o _{MAX is, 830nm ≦ λO MAX ≦ 860nm,} 930nm ≦ λO MAX ≦ 960nm , or satisfy _{1100nm ≦ λO MAX ≦ 1150nm, [} 1] an optical sensor module according to any of the ~ [7] ..

[9] Optical sensor and
A near-infrared absorbing optical filter having a dielectric multilayer film, a substrate, and a near-infrared absorbing layer is provided, and these are provided.
In order of dielectric multilayer film, substrate, near-infrared absorbing layer, optical sensor,
Dielectric multilayer film, substrate, near-infrared absorbing layer, dielectric multilayer film, optical sensor, in that order,
Substrate, dielectric multilayer film, near-infrared absorbing layer, optical sensor in that order,
Substrate, dielectric multilayer film, near-infrared absorbing layer, dielectric multilayer film, optical sensor, in that order,
Dielectric multilayer film, substrate, dielectric multilayer film, near-infrared absorbing layer, optical sensor in that order, or
A dielectric multilayer film, a substrate, a dielectric multilayer film, a near-infrared absorbing layer, a dielectric multilayer film, and an optical sensor are provided in this order.
The near-infrared absorbing optical filter transmits light having at least a part of wavelengths of 800 to 1200 nm.
When the wavelength of the highest transmittance of the light incident from the vertical direction of the near-infrared absorbing optical filter is 800 to 1200 nm and the wavelength is λOA _MAX (nm).
The transmittance TOA (λOA _MAX ) [× 100%] of the light incident from the vertical direction of the near-infrared absorbing optical filter at the λOA _MAX [nm] is 0.2 to 0.85.
Optical sensor module.

[10] The near-infrared absorbing optical filter has an antireflection layer for preventing reflection of light having a wavelength of at least a part of 800 to 1200 nm on the optical sensor side of the near-infrared absorbing layer [9]. The optical sensor module described in.

[11] The optical sensor module according to [9] or [10], which satisfies the following requirement (2).
Requirement (2): The average value of the reflectance of light incident on the near-infrared absorbing optical filter from the optical sensor side at an angle of 30 ° at a wavelength (λOA _MAX -15) nm to (λOA _MAX +15) nm. 8.2% or less

[12] The optical sensor module according to any one of [9] to [11], which has a space between the optical sensor and the near-infrared absorbing optical filter.

[13] The wavelength RamudaOA _{MAX is, 830nm ≦ λOA MAX ≦ 860nm,} 930nm ≦ λOA MAX ≦ 960nm , or satisfy _{1100nm ≦ λOA MAX ≦ 1150nm, [} 9] ~ optical sensor module according to any one of [12] ..

[14] The optical sensor module according to any one of [1] to [13], wherein the near-infrared absorbing layer contains a near-infrared absorbing agent having a maximum absorption wavelength at a wavelength of 850 to 1200 nm.

[15] The optical sensor module according to any one of [1] to [14], wherein the near-infrared absorbing layer has a thickness of 3 to 150 μm.

The optical sensor module according to the present invention has a small amount of ghost while having sensitivity to some near infrared rays. Therefore, the optical sensor module according to the present invention is used for mobile information terminal devices such as smartphones, tablet terminals, wearable devices, advanced driver assistance systems, autonomous driving systems, aircraft, unmanned aerial vehicles (drones), robots, etc. It is suitably used for agricultural machinery and medical equipment.

FIG. 1 is a schematic cross-sectional schematic view of an example of an optical sensor module according to the present invention. FIG. 2 is a schematic cross-sectional view of a conventional optical sensor module. FIG. 3 is a schematic explanatory view of a ghost optical path. FIG. 4 is a schematic cross-sectional view of an example of an optical filter. FIG. 5 is a schematic cross-sectional schematic view of an example of a near-infrared absorbing filter. FIG. 6 is a schematic cross-sectional schematic view of an example of a near-infrared absorbing optical filter. FIG. 7 is a configuration example of the optical sensor unit. FIG. 8 is a schematic cross-sectional schematic diagram showing a method for measuring the spectral transmittance or the spectral reflectance of the optical filter and the near-infrared absorbing filter. FIG. 9 shows a spectral transmission spectrum and a spectral reflection spectrum of the optical filter 1. FIG. 10 shows a spectral transmission spectrum and a spectral reflection spectrum of the optical filter 2. FIG. 11 shows a spectral transmission spectrum and a spectral reflection spectrum of the optical filter 3. FIG. 12 is a spectral transmission spectrum and a spectral reflection spectrum of the near-infrared absorption filter 1 in Example 1. FIG. 13 is a diagram showing ghost intensities for each wavelength in the optical sensor module of Example 1 and the optical sensor module (Comparative Example 1) using only the optical filter 1. FIG. 14 is a spectral transmission spectrum of the near-infrared absorbing optical filter 2 in Example 11. FIG. 15 is a diagram showing ghost intensities for each wavelength in the optical sensor module of Example 11 and the optical sensor module using only the optical filter 1 (Comparative Example 1).

Hereinafter, embodiments of the optical sensor module according to the present invention will be described with reference to drawings and the like. However, the present invention can be implemented in many different embodiments and is not construed as being limited to the description of the embodiments illustrated below. The drawings are merely examples, and the width, thickness, shape, etc. of each part may differ from the actual aspects in order to clarify the explanation.

In the present specification, "maximum transmittance at wavelength (V) to (W) nm" is synonymous with "maximum value of transmittance at wavelength (V) to (W) nm", and "wavelength (V) to (W) nm". "Average transmittance at W) nm" is synonymous with "average value of transmittance by wavelength at wavelengths (V) to (W) nm". In this case, V and W are different numerical values.

In the present invention, the description such as "A to B" representing the numerical range is synonymous with "A or more and B or less", and A and B are included in the numerical range. Further, in the present invention, the wavelengths A to Bnm represent the characteristics at a wavelength resolution of 1 nm in a wavelength region having a wavelength of Anm or more and a wavelength of Bnm or less.
For the average transmittance of wavelengths A to Bnm, the transmittance at each wavelength of Anm or more and Bnm or less in 1 nm increments is measured, and the total transmittance is calculated by the number of measured transmittances (wavelength range, BA + 1). It is a value calculated by dividing. The average reflectance is similar.

"Transmitt" in the present specification is synonymous with having a transmittance of 20% or more in a spectrophotometer.

≪Optical sensor module≫
Specifically, the optical sensor module according to the present invention relates to the following modules 1 and 2. These are also collectively referred to as "this module".
The optical sensor module according to the embodiment of the present invention (hereinafter, also referred to as “the present module 1”) is
A near-infrared absorbing filter having a near-infrared absorbing layer is provided between the optical sensor and an optical filter that transmits light having at least a part of the wavelengths of 800 to 1200 nm.
When the wavelength of the highest transmittance of the light incident from the vertical direction of the optical filter is λO _MAX (nm) at a wavelength of 800 to 1200 nm,
The average value of the transmittance of light incident from the vertical direction of the near-infrared absorbing filter at wavelengths (λO _MAX -15) nm to (λO _MAX +15) nm is 20 to 85%.

Further, the optical sensor module according to another embodiment of the present invention (hereinafter, also referred to as “the present module 2”) is
Optical sensor and
A near-infrared absorbing optical filter having a dielectric multilayer film, a substrate, and a near-infrared absorbing layer is provided, and these are provided.
In order of dielectric multilayer film, substrate, near-infrared absorbing layer, optical sensor,
Dielectric multilayer film, substrate, near-infrared absorbing layer, dielectric multilayer film, optical sensor, in that order,
Substrate, dielectric multilayer film, near-infrared absorbing layer, optical sensor in that order,
Substrate, dielectric multilayer film, near-infrared absorbing layer, dielectric multilayer film, optical sensor, in that order,
Dielectric multilayer film, substrate, dielectric multilayer film, near-infrared absorbing layer, optical sensor in that order, or
A dielectric multilayer film, a substrate, a dielectric multilayer film, a near-infrared absorbing layer, a dielectric multilayer film, and an optical sensor are provided in this order.
The near-infrared absorbing optical filter transmits light having at least a part of wavelengths of 800 to 1200 nm.
When the wavelength of the highest transmittance of the light incident from the vertical direction of the near-infrared absorbing optical filter is 800 to 1200 nm and the wavelength is λOA _MAX (nm).
The transmittance TOA (λOA _MAX ) [× 100%] of the light incident from the vertical direction of the near-infrared absorbing optical filter at the λOA _MAX [nm] is 0.2 to 0.85.

The module is thus characterized by comprising a particular near-infrared absorbing filter or near-infrared absorbing optical filter, which results in very few ghosts.
Therefore, this module includes, for example, smartphones, tablet terminals, mobile phones, speakers, smart speakers, wearable devices, automobiles, televisions, game machines, aircraft, unmanned aircraft, air conditioners, robots, robot vacuum cleaners, agricultural machines, biometric authentication devices. (Example: fingerprint authentication device, vein authentication device, face authentication device, iris authentication device), blood flow sensor, medical equipment, agricultural product quality inspection device.

The term "ghost" as used herein refers to a detection abnormality that causes a position, distance, and intensity different from the original sensing, which is generated when the reflected light from the surface of each component of the optical sensor module is incident on the sensor again. ..
For example, in the case of the optical sensor module arranged in FIG. 3B, optical paths such as 12 and 13 can be considered as ghosts. Of these, an optical path such as 13 passes through the near-infrared absorbing filter three times. When the light passes through the near-infrared absorbing filter three times in this way, the light absorption by the near-infrared absorbing filter reduces the intensity of the light incident on the optical sensor again as compared with the optical path 11 of the correct sensing, and also the ghost intensity. descend. Therefore, it is preferable to have a space (air interface) between the optical sensor and the near-infrared absorbing filter from the viewpoint that an optical path that passes through such a near-infrared absorbing filter several times can be secured. ..
On the other hand, when a near-infrared absorbing filter is provided inside or in contact with the optical sensor, it may be difficult to secure an optical path that passes through the near-infrared absorbing layer several times, or the optical sensor and the near-infrared absorbing layer may be provided. It may be difficult to suppress the occurrence of reflection at the interface with.
FIG. 3B is an example of the case related to this module 1, but also in this module 2, the optical element 2 and the like in FIG. 1B are on the side opposite to the optical sensor side of the near-infrared absorbing optical filter. In the presence of the member, a ghost optical path similar to that shown in FIG. 3B can occur. Therefore, it is preferable to have a space (air interface) between the optical sensor and the near-infrared absorbing optical filter for the same reason as described above.
Further, in the first place, it is not possible to directly provide a near-infrared absorbing filter or a near-infrared absorbing optical filter on the optical sensor due to the influence of foreign substances, difficulty in matching the refractive index, etc., which is one of the reasons why it is preferable to have the space. There is also one.

This module may be a module in which the near-infrared absorbing filter and the optical filter are separated (not in contact with each other) as in the present module 1, and the near-infrared absorbing optical filter may be used as in the present module 2. The module may be used, but the reflection on the optical sensor side of the optical filter (reflection between the optical filter and the air interface) and the reflection on the side opposite to the optical sensor side of the near infrared absorption filter can be easily suppressed. It is preferable to use a near-infrared absorbing optical filter from the viewpoints of being able to effectively reduce ghosts.

<Optical filter>
The optical filter is not particularly limited as long as it is an optical filter that transmits light having at least a part of the wavelengths of 800 to 1200 nm.
The optical filter may have two or more transmission bands, but is preferably an optical filter having one transmission band from the viewpoint of more exerting the effects of the present invention.
The number of optical filters used in this module 1 may be one or two or more. In the case of two or more, the same filter may be used, or different filters may be used.

The optical filter preferably has a base material A, and a filter having a characteristic of rapidly changing from a shielding region to a part of a transmission region of near infrared rays can be easily obtained. It is more preferable to have the dielectric multilayer film A on at least one surface of the above. Further, it is particularly preferable to have the dielectric multilayer film A on both sides of the base material A from the viewpoint that the warp of the obtained optical filter can be easily suppressed.

The thickness of the optical filter is not particularly limited and may be appropriately selected according to a desired application. However, according to the recent trend of thinning and weight reduction of optical sensor modules, the thickness of the optical filter is also thin. Is preferable.
The thickness of the optical filter is preferably 200 μm or less, more preferably 180 μm or less, still more preferably 150 μm or less, particularly preferably 120 μm or less, and the lower limit is not particularly limited, but is preferably 20 μm or more.

[Optical characteristics of optical filter]
Wavelength .lamda.o _MAX that the optical filter has _{is, 830nm ≦ λO MAX ≦ 860nm,} 930nm ≦ λO MAX ≦ 960nm or, preferably satisfies the 1100nm ≦ λO _MAX ≦ 1150nm.
When 830 nm ≤ λO _MAX ≤ 860 nm is satisfied, it is preferable from the viewpoint that it can be detected by using light that is difficult for human eyes to see, and the silicon photodiode sensor is highly sensitive to light in this wavelength range. An optical filter having λO _MAX in this range is preferably used when a silicon photodiode sensor is used as the optical sensor.
When 930 nm ≤ λO _MAX ≤ 960 nm is satisfied, noise due to sunlight is small, and detection can be performed with high sensitivity, which is preferable.
When 1100 nm ≤ λO _MAX ≤ 1150 nm is satisfied, noise due to sunlight is small, and detection can be performed with high sensitivity, which is preferable.

The optical filter preferably satisfies the following requirement (3).
Requirement (3): By using an optical filter that satisfies this requirement (3), the average value of the transmittance of light incident from the vertical direction of the optical filter at a wavelength of 400 nm to (λO _MAX -30) nm is 5% or less. , It is possible to block light from visible light to near infrared light other than near infrared rays (transmitted near infrared rays) to be detected, and the noise of the obtained optical sensor module can be easily reduced, and the sensitivity is further improved. It is preferable from the viewpoint of being able to do so.
The average value of the transmittance in the requirement (3) is more preferably 3% or less, further preferably 2% or less, and particularly preferably 1% or less.

The optical filter preferably satisfies the following requirement (4).
Requirement (4): By using an optical filter that satisfies this requirement (4), the average value of the transmittance of light incident from the vertical direction of the optical filter at a wavelength (λO _MAX +40) nm to 1250 nm is 5% or less. It is preferable from the viewpoints that light having a wavelength longer than that of near infrared rays for detection can be blocked, noise of the obtained optical sensor module can be easily reduced, and sensitivity can be further improved.
The average value of the transmittance in the requirement (4) is more preferably 3% or less, further preferably 2% or less, and particularly preferably 1% or less.

In an optical sensor module that uses near infrared rays, it is important to cut light of unnecessary wavelengths in order for the sensing function to function accurately.
Further, depending on the wavelength of the near infrared rays used for sensing, near infrared rays having a wavelength shorter than the wavelength used for sensing and near infrared rays having a longer wavelength are cut (for example, when near infrared rays having a wavelength of around 940 nm are used for sensing, visible light rays. In addition, near-infrared rays up to a wavelength of around 910 nm and near-infrared rays after a wavelength of around 980 nm are cut), so that noise during use can be reduced and the characteristics of the optical sensor module can be improved.
Therefore, it is preferable that the optical filter satisfies the requirements (3) and (4).

The optical filter preferably satisfies the following requirement (5).
Requirement (5): The average value of the transmittance of light incident from the vertical direction of the optical filter at a wavelength (λO _MAX -15) nm to (λO _MAX +15) nm is 70 to 100%.
It is preferable to use an optical filter that satisfies this requirement (5) from the viewpoint that the sensitivity of the optical sensor can be kept high.
The average value of the transmittance in the requirement (5) is more preferably 75 to 100%, still more preferably 80 to 100%, and particularly preferably 85 to 100%.

The optical filter preferably satisfies the following requirement (6).
Requirement (6): The average value of the reflectance of light incident on the optical filter from the optical sensor side at an angle of 30 ° at a wavelength (λO _MAX -15) nm to (λO _MAX +15) nm is 50% or less. By using an optical filter that satisfies this requirement (6), ghosts reflected by surrounding members can be reduced, which is preferable.
The average value of the transmittance in the requirement (6) is more preferably 40% or less, and particularly preferably 37% or less.

[Base material A]
The material, shape, and the like of the base material A are not particularly limited as long as the effects of the present invention are not impaired, but a plate-like body is preferable.
Further, the optical filter may have one layer of the base material A (see, for example, FIGS. 4 (A) to (D), (F) and (G)), and may have two or more layers. It may be (for example, see FIG. 4 (E)).

The material of the base material A is not particularly limited, and examples thereof include glass, tempered glass, phosphoric acid glass, futurate glass, alumina, yttrium aluminate, yttrium oxide, and resin.
The base material A may be made of one kind of material selected from these, or may be made of a plurality of kinds.

Examples of the glass include silicate glass, soda-lime glass, borosilicate glass, and quartz glass.

Examples of the tempered glass include physically tempered glass, tempered laminated glass, and chemically tempered glass. Among these, chemically strengthened glass having a thin compression layer and capable of processing a thin base material is preferable.
Specific examples of the chemically strengthened glass include "Dragonrail" manufactured by AGC Inc. and "Gorilla Glass" manufactured by Corning Inc.

Examples of the phosphoric acid glass and the futuric acid glass include BS3, BS4, BS6, BS7, BS8, BS10, BS11, BS12, BS13, BS16, BS17, and International Publication No. 2012/01826 manufactured by Matsunami Glass Industry Co., Ltd. Examples thereof include the fluorinated glass described in the item.
Examples of the alumina include "High Serum" manufactured by NGK Insulators, Ltd.
Examples of the yttrium aluminate and yttrium oxide include "EXYRIA" manufactured by CoorsTek Corporation.

[resin]
The resin is not particularly limited as long as the effects of the present invention are not impaired. For example, the resin is excellent in thermal stability and moldability into a plate-like body, and is dielectriced by high-temperature vapor deposition performed at a vapor deposition temperature of about 100 ° C. or higher. The glass transition temperature (Tg) is preferably 110 to 380 ° C., more preferably 110 to 370 ° C., and particularly preferably 120, from the viewpoint that a plate-like body capable of forming the body multilayer film A can be easily obtained. Examples thereof include resins having a temperature of about 360 ° C.
Further, when the Tg of the resin is 140 ° C. or higher, a plate-like body capable of forming the dielectric multilayer film A by vapor deposition at a higher temperature can be obtained, which is particularly preferable.

As the resin, the average value of the light transmittance of a resin plate having a thickness of 0.1 mm and having a wavelength of 800 to 1200 nm is preferably 75 to 95%, more preferably 78 to 95%, and particularly preferably. A resin having a content of 80 to 95% can be used.
When a resin having a light transmittance in the wavelength range in such a range is used, it exhibits good characteristics for ensuring the sensitivity of the optical sensor module provided with the optical filter containing the obtained base material A.

The polystyrene-equivalent weight average molecular weight (Mw) measured by the gel permeation chromatography (GPC) method of the resin is usually 15,000 to 350,000, preferably 30,000 to 250,000, and is a number. The average molecular weight (Mn) is usually 10,000 to 150,000, preferably 20,000 to 100,000.

Examples of the resin include cyclic (poly) olefin-based resin, aromatic polyether-based resin, polyimide-based resin, polyester-based resin, polycarbonate-based resin, polyamide (aramid) -based resin, polyarylate-based resin, and polysulfone-based resin. Polyether sulfone-based resin, polyparaphenylene-based resin, polyamideimide-based resin, polyethylene naphthalate (PEN) -based resin, fluorinated aromatic polymer-based resin, (modified) acrylic-based resin, epoxy-based resin, allyl ester-based curing Examples thereof include mold resins, silsesquioxane-based UV curable resins, acrylic UV curable resins, and vinyl UV curable resins.

-Cyclic (poly) olefin resin The cyclic (poly) olefin resin is selected from the group consisting of a monomer represented by the following formula (X ₀ ) and a monomer represented by the following formula (Y ₀ ). A resin obtained by using at least one of the following monomers and a resin obtained by hydrogenating the resin are preferable.

Wherein ^{_{(X 0), R x1 ~R}} x4 each independently represents an atom or a group selected from the following (i ') ~ (ix' ), k x, m x and p ^x are each independently 0 Represents an integer of ~ 4.
(I') Hydrogen atom (ii') Halogen atom (iii') Trialkylsilyl group (iv') Substituent or unsubstituted carbon number 1 having a linking group containing an oxygen atom, a sulfur atom, a nitrogen atom or a silicon atom. ~ 30 hydrocarbon group (v') substituted or unsubstituted hydrocarbon group (vi') polar groups with 1 to 30 carbon atoms (excluding (ii') and (iv'))
(Vii') Alkylidene groups formed by mutual bonding of R ^x1 and R ^x2 or R ^x3 and R ^x4 (however, R ^{x1 to} R ^{x4 that} are not involved in the bond are independently described in (i'). ) ~ (Vi') represents an atom or group selected.)
(Viii') A monocyclic or polycyclic hydrocarbon ring or heterocycle formed by bonding R ^x1 and R ^x2 or R ^x3 and R ^x4 to each other (however, R ^{x1 to} R not involved in the bond). ^x4 represents an atom or group independently selected from the above (i') to (vi').)
(Ix') A monocyclic hydrocarbon ring or heterocycle formed by bonding R ^x2 and R ^x3 to each other (however, R ^x1 and R ^{x4 that} are not involved in the bond are independently described in (i). Represents an atom or group selected from') to (vi').)

In equation (Y ₀ ), R ^y1 and R ^y2 independently represent atoms or groups selected from the above (i') to (vi'), or R ^y1 and R ^y2 are bonded to each other. formed monocyclic or polycyclic alicyclic hydrocarbon, an aromatic hydrocarbon or heterocyclic, k ^y and p ^y are each independently an integer of 0-4.

-Aromatic polyether resin The aromatic polyether resin is at least one structural unit selected from the group consisting of a structural unit represented by the following formula (1) and a structural unit represented by the following formula (2). It is preferable to have.

In the formula (1), R ^{1 to} R ⁴ independently represent a monovalent organic group having 1 to 12 carbon atoms, and a to d independently represent an integer of 0 to 4.

In the formula (2), R ^{1 to} R ⁴ and a to d are independently synonymous with R ^{1 to} R ⁴ and a to d in the formula (1), and Y is a single bond, −SO ₂ -Or -CO-, R ⁷ and R ⁸ independently represent a halogen atom, a monovalent organic group or a nitro group having 1 to 12 carbon atoms, and g and h independently represent 0 to 4, respectively. It indicates an integer, and m indicates 0 or 1. However, when m is 0, R ⁷ is not a cyano group.

Further, the aromatic polyether resin further has at least one structural unit selected from the group consisting of a structural unit represented by the following formula (3) and a structural unit represented by the following formula (4). May be.

In the formula (3), R ⁵ and R ⁶ each independently represents a monovalent organic group having 1 to 12 carbon atoms, Z is a single bond, -O -, - S -, - SO 2 -, - It represents CO-, -CONH-, -COO- or a divalent organic group having 1 to 12 carbon atoms, where e and f each independently represent an integer of 0 to 4, and n represents 0 or 1.

In formula (4), R ⁷ , R ⁸ , Y, m, g and h are independently synonymous with R ⁷ , R ⁸ , Y, m, g and h in formula (2), respectively. ⁵ , R ⁶ , Z, n, e and f are independently synonymous with R ⁵ , R ⁶ , Z, n, e and f in the above formula (3).

-Polyimide-based resin The polyimide-based resin is not particularly limited as long as it is a polymer compound containing an imide bond in a repeating unit, and is described in, for example, JP-A-2006-199945 and JP-A-2008-163107. It can be synthesized by the above method.

-Polyester-based resin The polyester-based resin is not particularly limited, and for example, it can be synthesized by the methods described in JP-A-2010-285505 and JP-A-2011-197450.

-Polycarbonate-based resin The polycarbonate-based resin is not particularly limited, but a resin having a glass transition temperature of 140 ° C. or higher is preferable. For example, JP-A-6-306158, JP-A-2004-359932, JP-A-2008- It can be synthesized by the method described in Japanese Patent Application Laid-Open No. 163194 and Japanese Patent Application Laid-Open No. 2011-246583.

-Fluorinated aromatic polymer-based resin The fluorinated aromatic polymer-based resin is not particularly limited, but has an aromatic ring having at least one fluorine atom, an ether bond, a ketone bond, a sulfone bond, an amide bond, an imide bond and an ester. It is preferably a polymer containing a repeating unit containing at least one bond selected from the group consisting of bonds, and can be synthesized, for example, by the method described in JP-A-2008-181121.

-Acrylic-based UV-curable resin The acrylic UV-curable resin is not particularly limited, but contains a compound having one or more acrylic groups or methacrylic groups in the molecule and a compound that is decomposed by ultraviolet rays to generate active radicals. Examples thereof include those synthesized from the resin composition to be used.

-Commercial products Examples of the commercially available products of the resin include the following commercially available products. Examples of commercially available cyclic (poly) olefin resins include Arton manufactured by JSR Corporation, Zeonoa manufactured by Zeon Corporation, APEL manufactured by Mitsui Chemicals Co., Ltd., and TOPAS manufactured by Polyplastics Corporation. Examples of commercially available products of the polyether sulfone-based resin include Sumika Excel PES manufactured by Sumitomo Chemical Co., Ltd. Examples of commercially available polyimide resins include Neoprim L manufactured by Mitsubishi Gas Chemical Company, Inc. Examples of commercially available products of the polycarbonate resin include Pure Ace manufactured by Teijin Limited, Panlite SP-3810 manufactured by Teijin Limited, and Iupizeta EP-5000 manufactured by Mitsubishi Gas Chemical Company. Examples of commercially available polyester-based resins include OKP4HT manufactured by Osaka Gas Chemical Co., Ltd. Examples of commercially available acrylic resins include Acryviewer manufactured by Nippon Shokubai Co., Ltd. Examples of commercially available products of the silsesquioxane-based ultraviolet curable resin include Silplus manufactured by Nippon Steel Chemical Co., Ltd.

[Other ingredients]
As long as the effect of the present invention is not impaired, the base material A further contains additives such as an infrared absorber, an ultraviolet absorber, an antioxidant, a mold release agent, a fluorescent quencher, and a metal complex compound as other components. It may be contained.
Each of the other components may be used alone or in combination of two or more.

[Manufacturing method of base material A]
When the base material A is a resin base material, the resin base material can be formed by, for example, melt molding or cast molding, and if necessary, after molding, an antireflection agent and a hard coating agent. And / or by coating with a coating agent such as an antistatic agent, the base material A on which the overcoat layer is laminated can be produced.

[Dielectric multilayer film A]
Examples of the dielectric multilayer film A include a laminate in which high refractive index material layers and low refractive index material layers are alternately laminated.
As the dielectric multilayer film A, it is preferable that the obtained optical filter is a film that transmits light having at least a part of the wavelengths of 800 to 1200 nm, and the obtained optical filter is the optical filter of the optical filter. It is more preferable that the film has characteristics that satisfy the optical characteristics.
Here, in order to optimize the conditions of the dielectric multilayer film A, for example, the parameters may be set using optical thin film design software (for example, Essential Macleod, manufactured by Thin Film Center).

As a material constituting the high refractive index material layer, a material having a refractive index of 1.8 or more can be used, and a material having a refractive index of 1.8 to 4.4 is usually selected. Examples of such materials include silicon, diamond, iron oxide, copper oxide, barium titanate, barium sulfide, strontium titanate, cadmium tellalide, strontium sulfide, mercury sulfide, cesium oxide, hafnium oxide, titanium oxide, and oxidation. Titanium oxide, tin oxide and / or oxidation containing zirconium, tantalum pentoxide, niobium oxide, antimony oxide, lanthanum oxide, yttrium oxide, zinc oxide, chromium oxide, indium oxide, antimony oxide, zinc oxide or indium oxide as main components. Examples thereof include those containing a small amount of cerium or the like (for example, 0 to 10% by mass with respect to the main component) and those in which the material particles having a refractive index of 1.8 or more are dispersed in a resin.
Among these, silicon, barium titanate, cadmium telluride, cesium oxide, hafnium oxide, titanium oxide, zirconium oxide, tantalum pentoxide, from the viewpoint of increasing the light transmittance in at least a part of the wavelength range from 800 to 1200 nm. , Niobium oxide, antimony oxide, lanthanum oxide, yttrium oxide are preferable.
Even with a small number of layers, it is possible to obtain steep optical characteristics that achieve both high transmittance of light in at least a part of the wavelength range of 800 to 1200 nm and low transmittance of wavelengths unnecessary for the optical sensor. Silicon or titanium oxide is preferred.

The refractive index in the present specification refers to the refractive index of light having a wavelength of 550 nm, and can be specifically measured by the method described in the following Examples.

As a material constituting the low refractive index material layer, a material having a refractive index of less than 1.8 can be used, and a material having a refractive index of 1.2 or more and less than 1.8 is usually selected. Such materials include, for example, resins, silicon dioxide (silica), alumina, lanthanum fluoride, barium fluoride, cesium fluoride, aluminum fluoride, lithium fluoride, magnesium fluoride and sodium hexafluoride (cryo). Light), yttrium fluoride. Among these, silica is preferable from the viewpoint of manufacturing cost, film adhesion, durability, etc., and silica having a refractive index of 1.468 or more is more preferable from the viewpoint of changes in optical characteristics when the temperature changes, and the refractive index is 1.47 or more. Silica is more preferred.

The dielectric multilayer film A may have a semiconductor layer or a conductor layer having a refractive index of 0.1 to 4.5. Examples of the material forming such a layer include graphite, tungsten, germanium, silicon, silicon monoxide, iron, manganese, platinum, gold, silver, copper, magnesium, tungsten, nickel and aluminum. By using such a layer, it is possible to increase the difference in refractive index between the high-refractive index material layer and the low-refractive index material layer, and it is unnecessary to transmit near infrared rays of a specific wavelength with a small number of layers. It becomes easy to block light of a certain wavelength.

The total number of layers of the high refractive index material layer and the low refractive index material layer, and the semiconductor layer and the conductor layer used as needed in the dielectric multilayer film A is preferably 16 to 120 layers as a whole optical filter. It is preferably 18 to 110 layers, particularly preferably 20 to 100 layers.
When the total number of layers is within the above range, a sufficient manufacturing margin can be secured, and warpage of the optical filter and cracks of the dielectric multilayer film A can be reduced.

The thickness (physical film thickness) of each of the high-refractive-index material layer and the low-refractive-index material layer forming the dielectric multilayer film A, and the semiconductor layer and the conductor layer used as needed is preferably 1 to 1300 nm. It is preferably 2 to 1200 nm, particularly preferably 5 to 1200 nm.
When the thickness of each layer is within this range, it is easy to control when forming the dielectric multilayer film A, and it is also possible to easily control blocking / transmission of a specific wavelength due to the optical characteristics of reflection / refraction. There is a tendency.

The method of laminating a high refractive index material layer, a low refractive index material layer, and a semiconductor layer or a conductor layer used as needed is not particularly limited as long as the dielectric multilayer film A in which these material layers are laminated is formed. ..
For example, the CVD method, the mist CVD method, the sputtering method, the magnetron sputtering method, the ion beam sputtering method, the radical assist sputtering method, the vacuum deposition method, the ion assist deposition method, the ALD method, and the plasma ALD method are directly placed on the base material A. Alternatively, a dielectric multilayer film A in which high refractive index material layers and low refractive index material layers are alternately laminated can be formed by an ion sputtering vapor deposition method or the like. Among these, the CVD method, magnetron sputtering method, ion beam sputtering method, radical assisted sputtering method, ion-assisted vapor deposition method, ALD method, plasma ALD method, and ion are considered to have little change in optical characteristics when the temperature changes. The plating vapor deposition method is preferable, and the magnetron sputtering method is preferable because a film having a high refractive index can be easily obtained when forming the dielectric multilayer film A used for an optical filter that transmits a part of wavelengths. Is more preferable, and when forming the dielectric multilayer film A having an antireflection function, the ion-assisted vapor deposition method is preferable from the viewpoints of a high film formation rate and a small change in optical characteristics due to humidity.

-Ion-assisted vapor deposition method The ion-assisted vapor deposition method is a method of irradiating the base material A with oxygen ions or ions of an inert gas during film formation of a vapor deposition material in vacuum vapor deposition. By controlling the ion current density of the ions to be irradiated, it is possible to increase the energy of the molecules during film formation without excessively heating the base material A, and a resin base material is used as the base material A. Even in this case, the dielectric multilayer film A having a high film density can be easily obtained.
Examples of devices capable of ion-assisted vapor deposition include SYRUSPro series manufactured by Buehler Leybold Optics, OTFC series manufactured by OPTORUN Co., Ltd., MIC series manufactured by Syncron Co., Ltd., EPD series, and VCD series manufactured by ShinMaywa Industry Co., Ltd. , Showa Vacuum Co., Ltd. Sapio series.

[Other functional layers]
The optical filter has a surface between the base material A and the dielectric multilayer film A, a surface opposite to the surface of the base material A provided with the dielectric multilayer film A, or a dielectric, as long as the effect of the present invention is not impaired. For the purpose of improving the surface hardness of the base material A and the dielectric multilayer film A, improving chemical resistance, preventing static electricity, and erasing scratches on the surface of the body multilayer film A opposite to the surface on which the base material A is provided. , An antireflection layer, a hard coat film, an antistatic film, an adhesion assisting film, a stress adjusting film, a conductive film, a light shielding layer, and other functional layers may be appropriately provided.
In particular, the optical filter preferably has an antireflection layer for preventing reflection of light having a wavelength of at least a part of 800 to 1200 nm on the optical sensor side from the viewpoint of further reducing ghosts.
Details of these functional layers are described in the near-infrared absorbing filter column below.
The optical filter may include one layer or two or more of these functional layers. When two or more functional layers are included, two or more similar layers may be included, or two or more different layers may be included.

The thickness of the functional layer is preferably 0.1 to 20 μm, more preferably 0.5 to 10 μm, and particularly preferably 0.7 to 5 μm.

<Near infrared absorption filter>
If the near-infrared absorbing filter has an average transmittance of light incident from the vertical direction of the near-infrared absorbing filter at a wavelength (λO _MAX -15) nm to (λO _MAX +15) nm of 20 to 85%. There are no particular restrictions.
The number of near-infrared absorbing filters used in this module 1 may be one, or two or more. In the case of two or more, the same near-infrared absorption filter may be used, or different near-infrared absorption filters may be used. When two or more near-infrared absorbing filters are used, the module 1 may have at least one near-infrared absorbing filter satisfying the average value of the transmittance between the optical sensor and the optical filter. Other near-infrared absorbing filters other than this near-infrared absorbing filter may not exist between the optical sensor and the optical filter, and the other near-infrared absorbing filter has an average value of the transmittance. Does not have to be satisfied.

The configuration of the near-infrared absorbing filter is not particularly limited as long as it has a near-infrared absorbing layer, but it is preferable to have a near-infrared absorbing layer and a dielectric multilayer film B, and further has other functional layers. You may be doing it.
A configuration example of such a near-infrared absorbing filter is shown in FIG.
The dielectric multilayer film B may be provided on one side of the near-infrared absorbing layer, but the dielectric multilayer film B may be provided on both sides of the near-infrared absorbing layer from the viewpoint of easily suppressing the warp of the obtained near-infrared absorbing filter. It is preferable to have a film B.

The thickness of the near-infrared absorbing filter is not particularly limited and may be appropriately selected according to a desired application. However, according to the recent trend of thinning and weight reduction of optical sensor modules, the near-infrared absorbing filter It is preferable that the thickness is also thin.
The thickness of the near-infrared absorbing filter is preferably 3 μm or more, more preferably 5 μm or more, and preferably 150 μm or less.
When the thickness of the near-infrared absorbing filter is not less than the lower limit of the above range, the near-infrared absorbing filter containing the near-infrared absorbing agent can be easily formed, which is desirable even when a near-infrared absorbing agent having a weak absorption intensity is used. When the absorption intensity of the above range is not more than the upper limit of the above range, the height of the obtained optical sensor module can be easily reduced, and a smaller optical sensor module can be easily obtained.

[Optical characteristics of near-infrared absorbing filter]
The average value of the transmittance of light incident from the vertical direction of the near-infrared absorbing filter at wavelengths (λO _MAX -15) nm to (λO _MAX +15) nm is 20 to 85%.
If the average value of the transmittance is 20% or more, the optical sensor can sufficiently receive the light transmitted through the optical filter and the near-infrared absorption filter, and if it is 85% or less, it is reflected by the optical sensor surface. Since it absorbs light, a ghost reduction effect can be obtained.
The average value of the transmittance is preferably 30% or more, particularly preferably 35% or more, from the viewpoint that the sensitivity of the optical sensor can be further improved. Further, the average value of the transmittance is preferably 82% or less, and particularly preferably 79% or less, from the viewpoint that ghost can be further reduced.

The near-infrared absorbing filter preferably satisfies the following requirement (1).
Requirement (1): The average value of the reflectance of light incident on the near-infrared absorbing filter from the optical sensor side at an angle of 30 ° at wavelengths (λO _MAX -15) nm to (λO _MAX +15) nm is 7. % Or less If the average value of the reflectance is within the above range, it can be expected that the ghost can be further reduced.
The average value of the reflectance is more preferably 5% or less, further preferably 4% or less, and particularly preferably 3% or less.
A near-infrared absorbing filter satisfying the requirement (1) can be obtained, for example, by forming an antireflection layer.

The optical filter and the near-infrared absorbing filter in this module 1 are
Let the value of the transmittance of the light incident from the vertical direction of the optical filter at the λO _MAX [nm] be TO (λO _MAX ) [× 100%].
When the transmittance of light incident from the vertical direction of the near-infrared absorbing filter at the λO _MAX [nm] is set to TA (λO _MAX ) [× 100%].
TO (λO _MAX ) × TA (λO _MAX ) is preferably 0.15 or more, more preferably 0.20 or more, particularly preferably 0.25 or more, preferably 0.85 or less, and more preferably 0. It is 79 or less.
When this product is at least the lower limit of the above range, it becomes easy to secure the sensitivity required for sensing, and when it is at least the upper limit of the above range, the ghost intensity can be easily reduced.
For example, when the transmittance of light incident from the vertical direction of the optical filter at the λO _MAX [nm] is 90%, the value of the TO (λO _MAX ) [× 100%] is “0.9”. is there.

[Near infrared absorption layer]
The material, shape, and the like of the near-infrared absorbing layer are not particularly limited as long as they can absorb at least a part of the near-infrared rays.
Examples of such a near-infrared absorbing layer include (i) a base material B containing a near-infrared absorbing agent, and (ii) a laminated structure of a base material B and a layer containing a near-infrared absorbing agent. The above (i) is preferable from the viewpoint that a near-infrared absorbing filter exhibiting the above characteristics can be easily obtained.
In the case of (i), the base material B is a near-infrared absorbing layer, and in the case of (ii), the laminated structure is a near-infrared absorbing layer.

Examples of the material of such a base material B include the same materials as those mentioned as the material of the base material A in the column of the optical filter.
Among these, copper phosphate glass, copper fluorinated glass, or resin is preferable when the base material B contains a near-infrared absorber.
The base material B may be made of one kind of material selected from these, or may be made of a plurality of kinds.

[Near infrared absorber]
As the near-infrared absorber, an absorbent having an average transmittance of 20 to 85% at a wavelength (λO _MAX -15) nm to (λO _MAX +15) nm is preferable.
Examples of such absorbents include squarylium compounds, croconium compounds, phthalocyanine compounds, naphthalocyanine compounds, polymethine compounds, cyanine compounds, tetraazaporphyrin compounds, diimonium compounds, porphyrin compounds, and tria. Lillemethane compound, subphthalocyanine compound, perylene compound, semisquarylium compound, styryl compound, phenazine compound, pyridomethene-boron complex compound, pyrazine-boron complex compound, pyridoneazo compound, xanthene compound, dipyrromethene System compounds, ring-extended dipyrromethene-based compounds, pyrolopyrrole-based compounds, hetero-ring-conjugated compounds, hexaphyllin-based compounds, metal dithiolate-based compounds, ring-extended BODIPY (borondipyrromethene) -based compounds, itterbium complex-based compounds, copper oxide-based compounds , At least one selected from the group consisting of copper phosphate compounds, copper phosphonate compounds and copper sulfonate compounds, preferably squarylium compounds, phthalocyanine compounds, polymethine compounds, cyanine compounds, na Phthalocyanin compounds, pyrolopyrrole compounds, diimonium compounds, croconium compounds, hexaphyllin compounds, metal dithiolate compounds, ring-extended BODICY (boron dipyrromethene) compounds, perylene compounds, heterocyclic conjugate compounds, itterbium complex More preferably, it is at least one selected from the group consisting of systematic compounds, copper oxide compounds, copper phosphate compounds, copper phosphonate compounds, copper sulfonate compounds and ring-extended dipyrromethene compounds.

In the above (i), when the material of the base material B is a resin, the near-infrared absorber is preferably a squarylium-based compound, a polymethine-based compound, a diimonium-based compound, or a heterocyclic conjugated compound.
Further, in the case of (i), when the material of the base material B is glass phosphate or glass phosphate, the near-infrared absorber is preferably a copper oxide compound or a copper phosphate compound.

The maximum absorption wavelength of the near-infrared absorber is preferably in the range of 850 to 1200 nm, more preferably 880 to 1150 nm, and particularly preferably 885 to 1130 nm.
The use of such a near-infrared absorbing agent, a wavelength .lamda.o _MAX is the preferred range, _{i.e., 830nm ≦ λO MAX ≦ 860nm,} 930nm ≦ λO MAX ≦ 960nm or, when in the 1100nm ≦ λO _MAX ≦ 1150nm, near infrared absorption Since the layer can efficiently absorb ghost light, ghost tends to be effectively reduced.

The near-infrared absorber may be synthesized by a generally known method. For example, JP-A-1-228960, JP-A-2001-40234, Patent No. 3094037, and Patent No. 3196383. , JP 2009-108267 can be synthesized by referring to the method described in JP-A-2009-108267.

In the case of (i), the content of the near-infrared absorber is preferably 0.0001 to 20.0 parts by mass, more preferably 0.0002 to 15 parts by mass, particularly preferably 0.0002 to 15 parts by mass, based on 100 parts by mass of the resin. Is 0.0003 to 10 parts by mass, and in the case of (ii) above, specifically, the base material B containing no near-infrared absorber, a resin such as a curable resin, and the near-infrared absorber are contained. When a laminated structure in which an overcoat layer is laminated is used, it is preferably 0.0001 to 50 parts by mass, more preferably 0.005 to 40 parts by mass with respect to 100 parts by mass of the resin contained in the overcoat layer. It is by mass, particularly preferably 0.001 to 30 parts by mass.
When the content of the near-infrared absorbing agent is within the above range, a near-infrared absorbing layer having good near-infrared absorbing characteristics can be easily obtained.

[Squarylium compounds]
The squarylium-based compound is not particularly limited, but a compound having a maximum absorption wavelength in the above range is preferable. Examples of such a squarylium-based compound include a compound represented by the following formula (Z).

In the formula (Z), the units A and B independently represent either the unit represented by the following formula (I) or (II).

In formulas (I) and (II), the portion represented by the wavy line represents the binding site with the central four-membered ring of the formula (Z).
X independently represents an oxygen atom, a sulfur atom, a selenium atom, a tellurium atom or −NR ⁸ −.
R ^{1 to} R ⁷ are independently hydrogen atom, halogen atom, sulfo group, hydroxyl group, cyano group, nitro group, carboxy group, phosphate group, -NR ^g R ^h group, -SR ⁱ group, -SO ₂ R. ^It represents either ⁱ group, -OSO ₂ R ⁱ group or L ^{a to} L ^h below, R ⁸ independently represents either hydrogen atom or L ^{a to} L ^h , and R ^g and R ^h respectively. independently represent any of a hydrogen atom, -C (O) R ⁱ groups or the following L ^a ~L ^e, R ⁱ represents any of the following L ^a ~L ^e,
(L ^a) from 1 to 12 carbon atoms aliphatic hydrocarbon group (L ^b) halogen-substituted alkyl group having 1 to 12 carbon atoms (L ^c) of 3 to 14 carbon atoms alicyclic hydrocarbon group (L ^d) carbon Aromatic hydrocarbon group (L ^e ) of number 6 to 14 Heterocyclic group of carbon number 3 to 14 (L ^f ) Alkoxy group (L ^g ) substituent L of carbon number 1 to 12 may have carbon number 1-12 acyl group (L ^h) substituents L carbon atoms which may have from 2 to 12 alkoxycarbonyl group substituent L is at least one selected from the L ^a ~L ^e.

The R ¹ is preferably a hydrogen atom, a chlorine atom, a fluorine atom, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a cyclohexyl group, and the like. It is a phenyl group, a hydroxyl group, an amino group, a dimethylamino group or a nitro group, and more preferably a hydrogen atom, a chlorine atom, a fluorine atom, a methyl group, an ethyl group, an n-propyl group, an isopropyl group or a hydroxyl group.

The R ^{2 to} R ⁷ are independent of each other, preferably hydrogen atom, chlorine atom, fluorine atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-. Butyl group, cyclohexyl group, phenyl group, hydroxyl group, amino group, dimethylamino group, cyano group, nitro group, methoxy group, ethoxy group, n-propoxy group, n-butoxy group, acetylamino group, propionylamino group, N- Methylacetylamino group, trifluoromethanoylamino group, pentafluoroethanoylamino group, tert-butanoylamino group, cyclohexinoylamino group, n-butylsulfonyl group, methylthio group, ethylthio group, n-propylthio group, n -Butylthio group, more preferably hydrogen atom, chlorine atom, fluorine atom, methyl group, ethyl group, n-propyl group, isopropyl group, tert-butyl group, hydroxyl group, dimethylamino group, methoxy group, ethoxy group, acetyl. Amino group, propionylamino group, trifluoromethanoylamino group, pentafluoroetanoylamino group, tert-butanoylamino group, cyclohexinoylamino group, methylthio group, ethylthio group.

The R ⁸ is preferably a hydrogen atom, a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a cyclohexyl group, an n-pentyl group, or n. -Hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, phenyl group, more preferably hydrogen atom, methyl group, ethyl group, n-propyl group, isopropyl group, n -Butyl group, tert-butyl group, n-decyl group.

As the X, preferably an oxygen atom, a sulfur atom, -NR ⁸ - in and, as the X of formula (I), particularly preferably an oxygen atom, a sulfur atom, X of formula (II) , Particularly preferably −NR ⁸ −.

The squarylium-based compound can be represented by the following formula (Z1) or as a resonance structure as shown in the following formula (Z2). That is, the difference between the following formula (Z1) and the following formula (Z2) is only the method of describing the structure, and both represent the same compound. Unless otherwise specified in the present specification, the structure of the squarylium-based compound is represented by a description method such as the following formula (Z1).

Further, for example, the compound represented by the following formula (Z1) and the compound represented by the following formula (Z3) can be regarded as the same compound.

In the compound represented by the formula (Z), the left and right units bonded to the central four-membered ring are different even if they have the same structure as long as they have the structure represented by the formula (I) or the formula (II), respectively. However, it is preferable that the substituents in the unit are the same because it is easy to synthesize. That is, as the compound represented by the formula (Z), the compound represented by the following formula (III) or the formula (IV) is preferable.

Specific examples of the compound represented by the formula (Z) include compounds (z-1) to (z-58) shown in Tables 1 and 2 below.

[Polymethine compounds]
The polymethine-based compound is not particularly limited, but a compound having a maximum absorption wavelength in the above range is preferable. Examples of such a polymethine-based compound include compounds represented by the following formulas (S-a) to (S-d).

Wherein A ^- represents a monovalent anion. No particular limitation is imposed on the said monovalent anion, ^{e.g., Cl -, Br -, I} -, PF 6 -, ClO 4 -, NO 3 -, BF 4 -, SCN -, CH 3 COO -, CH 3 CH ₂ COO ^-, methyl sulfonic acid ion, tetrafluoro methyl sulfonic acid ion, naphthalenesulfonic acid ion, anthracene sulfonate _{ion, N (SO 2 CF 3)} 2 -, B (C 6 F 5) 4 -, C 6 H ₅ SO ₃ ^-, toluenesulfonate _{^{ion, CF 3 COO -, CF 3}} CF 2 COO -, nickel dithio alert based complex ions, copper Jichiorato based complex ions.

The plurality of Ds independently represent a carbon atom, a nitrogen atom, an oxygen atom or a sulfur atom.
Independently each of the plurality of X represents an oxygen atom, a sulfur atom, a selenium atom or -NR ⁸ - represents, R ⁸ each independently represent any of a hydrogen atom or the L ^a ~L ^h.

A plurality of R _{a to} R _i are independently hydrogen atom, halogen atom, hydroxyl group, carboxy group, nitro group, amino group, amide group, imide group, cyano group, silyl group, -L ¹ , -S-L ² , -SS-L ² , -SO _2- L ³ , -NR ^g R ^h group (R ^g and R ^h independently represent the following L ² or -C (O) R ⁱ group, where R ⁱ is Represents L ² below), -N = N-L ⁴ , or R _b and R _c , R _d and R _e , R _e and R _f , R _f and R _g , R _g and R _h and R _h. Represents a group selected from the groups represented by the following formulas (a) to (h) to which at least one combination of and R _i is bonded.

In addition, D- (R _b ) (R _c ) in the above formulas (S-a) to (S-d) is described in this way for convenience, and R _b and R _c are not necessarily included in D. Are not combined. For example, if D is a nitrogen atom, then one of R _b and R _c is absent, if D is an oxygen atom, then both R _b and R _c are absent, and if D is a sulfur atom, then R _b and R _c. Both do not exist, or the sum of R _b and R _c is four.

The amino group, amide group, imide group and silyl group are an aliphatic hydrocarbon group having 1 to 12 carbon atoms, a halogen-substituted alkyl group having 1 to 12 carbon atoms, and an alicyclic hydrocarbon group having 3 to 14 carbon atoms. Selected from the group consisting of an aromatic hydrocarbon group having 6 to 14 carbon atoms, a heterocyclic group having 3 to 14 carbon atoms, a halogen atom, a sulfo group, a hydroxyl group, a cyano group, a nitro group, a carboxy group, a phosphoric acid group and an amino group. It may have at least one substituent L'.

Wherein L ¹ is one of the following L ^a ~L ^i.
(L ^a) the substituents L 'also good having 1 to 12 carbon atoms include aliphatic hydrocarbon groups (L ^b) the substituents L' of 1 to 12 carbon atoms which may have a halogen-substituted alkyl Group (L ^c ) Alicyclic hydrocarbon group having 3 to 14 carbon atoms which may have the substituent L'(L ^d ) Aroma having 6 to 14 carbon atoms which may have the substituent L'. Group hydrocarbon group (L ^e ) A heterocyclic group having 3 to 14 carbon atoms which may have the substituent L'(L ^f ) An alkoxy having 1 to 9 carbon atoms which may have the substituent L'. Group (L ^g ) Acrylic group having 1 to 9 carbon atoms which may have the substituent L'(L ^h ) An alkoxycarbonyl group (L) having 2 to 9 carbon atoms which may have the substituent L'. ⁱ ) A sulfide group or disulfide group having 1 to 12 carbon atoms which may have the substituent L'.

The L ² represents either ^a hydrogen atom or La to L ^e in the L ¹ and represents.
The L ³ represents either ^a hydrogen atom or La to L ^e in the L ¹ and represents.
Wherein L ⁴ represents represents any of L ^a ~L ^e in the L ^1.

In formulas (a) to (h), R _x and R _y represent carbon atoms.
A plurality of _{RA to RL} are independently hydrogen atom, halogen atom, hydroxyl group, carboxy group, nitro group, amino group, amide group, imide group, cyano group, silyl group, -L ¹ , -S-L ² , -SS-L ² , -SO ₂ -L ³ , -NR ^g R ^h group (R ^g and R ^h independently represent L ² or -C (O) R ⁱ group, where R ⁱ is L represents ^2.) or ^{-N = N-L 4 (L} 1 ~L 4 , the same meaning as L ¹ ~L ⁴ in R _a to R _i.) represent the amino group, amido group, imido The group and the silyl group may have the substituent L'.

Z _{a to} Z _c and Y _{a to} Y _d are independently hydrogen atom; halogen atom; hydroxyl group; carboxy group; nitro group; amino group; amide group; imide group; cyano group; silyl group; -L ¹ ;- S-L ² ; -SS-L ² ; -SO _2- L ³ ; -NR ^g R ^h group (R ^g and R ^h independently represent L ² or -C (O) R ⁱ group, R ⁱ represents L ² ); −N = N−L ⁴ (L ^{1 to} L ⁴ are synonymous with L ^{1 to} L ⁴ in _{Ra to} R _i ); Z to each other or Y to each other. Aromatic hydrocarbon groups having 6 to 14 carbon atoms, of which two adjacent ones are bonded to each other; nitrogen atoms and oxygen formed by bonding two adjacent Zs or Ys to each other. A 5- to 6-membered alicyclic hydrocarbon group which may contain at least one atom or sulfur atom; or a nitrogen atom formed by bonding two adjacent Zs or Ys to each other. , A heteroaromatic hydrocarbon group having 3 to 14 carbon atoms and containing at least one oxygen atom or sulfur atom; these aromatic hydrocarbon groups, alicyclic hydrocarbon groups and heteroaromatic hydrocarbon groups , It may have an aliphatic hydrocarbon group having 1 to 9 carbon atoms or a halogen atom, and the amino group, the amide group, the imide group and the silyl group may have the substituent L'.

Examples of the aromatic hydrocarbon group having 6 to 14 carbon atoms formed by bonding Z to each other or Y to each other in Z _{a to} Z _c and Y _{a to} Y _d include a phenyl group and a tolyl group. , Xyryl group, mesityl group, cumenyl group, 1-naphthyl group, 2-naphthyl group, anthracenyl group, phenanthryl group, acenaphthyl group, phenalenyl group, tetrahydronaphthyl group, indanyl group and biphenylyl group.

A 5- to 6-membered ring of Z _{a to} Z _c and Y _{a to} Y _d , which may contain at least one nitrogen atom, oxygen atom or sulfur atom formed by bonding Z to each other or Y to each other. Examples of the alicyclic hydrocarbon group include a cycloalkyl group such as a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group and a cyclooctyl group; a polycyclic alicyclic group such as a norbornan group and an adamantan group; tetrahydrofuran and pyrolin. , Pyrrolidine, imidazoline, piperidine, piperazine, heterocycles such as a group consisting of morpholin.

Examples of the heteroaromatic hydrocarbon group having 3 to 14 carbon atoms formed by bonding Z to each other or Y to each other in Z _{a to} Z _c and Y _{a to} Y _d include furan and thiophene. Pyrazole, pyrazole, imidazole, triazole, oxazole, oxadiazole, thiazole, thiazazole, indol, indolin, indrenine, benzofuran, benzothiophene, carbazole, dibenzofuran, dibenzothiophene, pyridine, pyrimidine, pyrazine, pyridazine, quinoline, isoquinoline, acrydin Alternatively, a group consisting of phenazine can be mentioned.

Examples of the amino group which may have the substituent L'include an amino group, an ethylamino group, a dimethylamino group, a methylethylamino group, a dibutylamino group and a diisopropylamino group.

Examples of the amide group which may have the substituent L'include an amide group, a methylamide group, a dimethylamide group, a diethylamide group, a dipropylamide group, a propyltrifluoromethylamide group, a diisopropylamide group and a dibutylamide group. , Α-lactam group, β-lactam group, γ-lactam group, δ-lactam group.

Examples of the imide group which may have the substituent L'include an imide group, a methylimide group, an ethylimide group, a diethylimide group, a dipropylimide group, a diisopropylimide group and a dibutylimide group.

Examples of the silyl group that may have the substituent L'include a trimethylsilyl group, a tert-butyldimethylsilyl group, a triphenylsilyl group, and a triethylsilyl group.

Examples of the -SL ² include a thiol group, a methyl sulfide group, an ethyl sulfide group, a propyl sulfide group, a butyl sulfide group, an isobutyl sulfide group, a sec-butyl sulfide group, a tert-butyl sulfide group and a phenyl sulfide group. Examples thereof include a 2,6-di-tert-butylphenyl sulfide group, a 2,6-diphenyl phenyl sulfide group and a 4-cumyl phenyl sulfide group.

Examples of the -SS-L ² include a disulfide group, a methyl disulfide group, an ethyl disulfide group, a propyl disulfide group, a butyl disulfide group, an isobutyl disulfide group, a sec-butyl disulfide group, a tert-butyl disulfide group and a phenyl disulfide group. Examples thereof include a 2,6-di-tert-butylphenyl disulfide group, a 2,6-diphenylphenyl disulfide group and a 4-cumylphenyl disulfide group.

Examples of the -SO _2- L ³ include a sulfo group, a mesyl group, an ethylsulfonyl group, an n-butylsulfonyl group, and a p-toluenesulfonyl group.

Examples of the -N = N-L ⁴ include a methylazo group, a phenylazo group, a p-methylphenylazo group, and a p-dimethylaminophenylazo group.

Among the above (S-c), the compound represented by the following formula (S-e) is preferable from the viewpoint of light resistance and the like.

Specific examples of the compound represented by the formula (S-e) include the compounds (S-1) to (S-20) shown in Table 3 below.
The portion represented by the wavy line in Table 3 represents the binding site with the ring of the above formula (S-e).

[Diimonium compound]
The diimonium-based compound is not particularly limited, but a compound having a maximum absorption wavelength in the above range is preferable, and a compound represented by the following formula (D1) is more preferable.

In formula (D1), R ¹ and R ² are independently hydrogen atom, halogen atom, sulfo group, hydroxyl group, cyano group, nitro group, carboxy group, phosphate group, -NR ^g R ^h group, -SR ^i. group, -SO ₂ R ⁱ group, or an -OSO ₂ R ⁱ group or a group represented by L ^a ~L ^h, R ^g and R ^h are each independently a hydrogen atom, -C (O) R ⁱ groups or represents one of the following L ^a ~L ^e, R ⁱ represents any of the following L ^a ~L ^e,
(L ^a) from 1 to 12 carbon atoms aliphatic hydrocarbon group (L ^b) halogen-substituted alkyl group having 1 to 12 carbon atoms (L ^c) of 3 to 14 carbon atoms alicyclic hydrocarbon group (L ^d) carbon Aromatic hydrocarbon group (L ^e ) having 6 to 14 carbon atoms, heterocyclic group (L ^f ) having 3 to 14 carbon atoms, and alkoxy group (L ^g ) substituent L having 1 to 12 carbon atoms may have carbon number. 1-12 acyl group (L ^h) alkoxycarbonyl wherein the substituents L substituent L carbon atoms which may have from 2 to 12 is at least one selected from the L ^a ~L ^e, n Is an integer from 0 to 4, and X represents the anion required to neutralize the charge.

R ¹ is preferably hydrogen atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, cyclohexyl group, phenyl group, benzyl. It is a group, more preferably an isopropyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, or a benzyl group.

R ² is preferably hydrogen atom, chlorine atom, fluorine atom, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, cyclohexyl group phenyl group. , Hydroxyl group, amino group, dimethylamino group, cyano group, nitro group, methoxy group, ethoxy group, n-propoxy group, n-butoxy group, acetylamino group, propionylamino group, N-methylacetylamino group, trifluorometh Noylamino group, pentafluoroetanoylamino group, tert-butanoylamino group, cyclohexinoylamino group, n-butylsulfonyl group, methylthio group, ethylthio group, n-propylthio group, n-butylthio group, more preferably. Hydrogen atom, chlorine atom, fluorine atom, methyl group, ethyl group, n-propyl group, isopropyl group, tert-butyl group, hydroxyl group, dimethylamino group, methoxy group, ethoxy group, acetylamino group, propionylamino group, It is a trifluoromethanoylamino group, a pentafluoroetanoylamino group, a tert-butanoylamino group, a cyclohexinoylamino group, and particularly preferably a hydrogen atom, a methyl group, an ethyl group, an n-propyl group or an isopropyl group. is there.
The number of R ² bonded to the same aromatic ring (value of n) is not particularly limited as long as 0-4, is preferably 0 or 1.

The X is an anion necessary for neutralizing the electric charge, and one is required when the anion is divalent and two when the anion is monovalent. In the latter case, the two anions may be the same or different, but they are preferably the same from a synthetic point of view. X is not particularly limited as long as it is such an anion, and examples thereof include the anions shown in Table 4 below.

When the X is an anion having a high acidity when it is used as an acid, the heat resistance of the diimonium-based compound tends to be improved. From this, the X includes (X-10), (X-16), (X-17), (X-21), (X-22), (X-24), and (X-24) in Table 4. (X-28) is particularly preferable.

[Heterocyclic conjugated compound]
The heterocyclic conjugated compound is not particularly limited, but a compound having a maximum absorption wavelength in the above range is preferable. Examples of such a heterocyclic conjugated compound include a compound represented by the following formula (H).

The R _{H1 to} R _H4 independently represent either ^a hydrogen atom or La to L ^h .
(L ^a) from 1 to 12 carbon atoms aliphatic hydrocarbon group (L ^b) halogen-substituted alkyl group having 1 to 12 carbon atoms (L ^c) of 3 to 14 carbon atoms alicyclic hydrocarbon group (L ^d) carbon Aromatic hydrocarbon group (L ^e ) of number 6 to 14 Heterocyclic group (L ^f ) having 3 to 14 carbon atoms May have an alkoxy group (L ^g ) substituent L having 1 to 12 carbon atoms. 1-12 acyl groups,
(L ^h) alkoxycarbonyl wherein the substituents L substituent L carbon atoms which may have from 2 to 12 is at least one selected from the L ^a ~L ^e.

The R _{H5 to} R _H8 are independently hydrogen atom, halogen atom, sulfo group, hydroxyl group, cyano group, nitro group, carboxy group, phosphate group, -NR ^g R ^h group, -SR ⁱ group, -SO ₂ R ⁱ group represents either L ^a ~L ^h in -OSO ₂ R ⁱ groups or the R _H1 to R _H4, are each R ^g and R ^h independently represents a hydrogen atom, -C (O) R ⁱ groups or represents one of L ^a ~L ^e in the R _H1 ~R _H4, R ⁱ represents any L ^a ~L ^e in the R _H1 to R _H4.

In the compound represented by the formula (H), the equal in terms of solubility in the resin is good, that R _H1 to R _H4 is either the L ^a ~L ^h above 3 carbon atoms Is preferable.
In the compound represented by the formula (H), from the viewpoint of the R _H5 to R _H8 becomes easy to properly adjust the electronic energy levels the compound has, a bromine atom.

[Other ingredients]
The near-infrared absorbing layer further contains additives such as an ultraviolet absorber, an antioxidant, a mold release agent, a fluorescent quenching agent, and a metal complex compound as other components as long as the effects of the present invention are not impaired. May be.
The other components may be used alone or in combination of two or more.

Examples of the ultraviolet absorber include azomethine compounds, indole compounds, benzotriazole compounds, and triazine compounds.

Examples of the antioxidant include 2,6-di-tert-butyl-4-methylphenol, 2,2'-dioxy-3,3'-di-tert-butyl-5,5'-dimethyldiphenylmethane, and the like. Examples thereof include tetrakis [methylene-3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] methane and tris (2,6-di-tert-butylphenyl) phosphite.

When these other components are blended with the base material B, they may be mixed with the resin or the like constituting the base material B, or may be added when the resin is synthesized.
The amount of the other components added to the base material B containing the resin may be appropriately selected according to the desired characteristics, but is usually 0.01 to 5.0 with respect to 100 parts by mass of the resin. It is by mass, preferably 0.05 to 2.0 parts by mass.

[Dielectric multilayer film B]
The near-infrared absorbing filter preferably has a dielectric multilayer film B from the viewpoint that a near-infrared absorbing filter having desired optical characteristics can be easily obtained.
The dielectric multilayer film B is preferably an antireflection film that prevents reflection of light having a wavelength of at least a part of the wavelengths of 800 to 1200 nm, and includes a high refractive index material layer and a low refractive index material layer. Examples thereof include a laminated body in which the above are alternately laminated.
Examples of the high-refractive index material layer and the low-refractive index material layer include the above-mentioned layers, respectively, but near-infrared absorption having characteristics that sufficiently suppress reflection and hardly change optical characteristics due to humidity change, temperature change, etc. The titanium oxide layer is preferable as the high refractive index material layer, and the silica layer is preferable as the low refractive index material layer from the viewpoint that a filter can be easily obtained.

[Other functional layers]
The near-infrared absorbing filter is a dielectric for the purposes of improving the surface hardness of the base material B and the dielectric multilayer film B, improving chemical resistance, preventing antistatic properties, and erasing scratches, as long as the effects of the present invention are not impaired. A functional layer other than the multilayer film B, such as an antireflection layer, a hard coat film, an antistatic film, an adhesion assisting film, a stress adjusting film, a conductive film, and a light shielding layer may be appropriately provided.
The near-infrared absorbing filter may include one layer or two or more of the above-mentioned functional layers. When two or more functional layers are included, two or more similar layers may be included, or two or more different layers may be included.

The thickness of the functional layer is preferably 0.1 to 20 μm, more preferably 0.5 to 10 μm, and particularly preferably 0.7 to 5 μm.

-Anti-reflection layer The near-infrared absorbing filter may be a film other than the dielectric multilayer film B, and preferably has an anti-reflection layer that prevents reflection of light having at least a part of wavelengths of 800 to 1200 nm. .. It is preferable that such an antireflection layer is provided on the optical sensor side of the near-infrared absorbing filter.

The material, shape, and the like of the antireflection layer are not particularly limited, but the reflectance of near infrared rays at a wavelength (λO _MAX -15) nm to (λO _MAX +15) nm is reduced as compared with that before the antireflection layer is provided. Such a layer is preferable, and it is more preferable that the near-infrared absorbing filter is a layer that satisfies the above requirement (1).
Examples of such an antireflection layer include an antireflection layer made of the dielectric multilayer film B, an antireflection layer having a thickness of less than 2 μm and a low refractive index layer of 1.0 to 1.4, and a diameter. Examples thereof include an antireflection layer having a conical structure of less than 1 μm.

-Light-shielding layer The optical filter or near-infrared ray absorbing filter has a light-shielding layer as shown in (F) and (G) of FIG. 4 and (F) and (G) of FIG. 5, depending on the desired application. Is preferable.
The light-shielding layer is a layer having a light transmittance of 0.1% or less at any wavelength of 400 to 1200 nm.
The configuration example of the light-shielding layer is not particularly limited as long as it is a layer that satisfies such transmittance, but for example, resins such as thermosetting resin, ultraviolet curable resin, and thermoplastic resin, pigments, dyes, and the like. Examples thereof include those obtained by mixing a metal, a metal oxide, a metal nitride, or the like and curing the mixture if necessary. Further, on an optical filter or a near-infrared absorbing filter, a layer made of a metal, a metal oxide, a metal nitride or the like so that the light transmittance at any wavelength of 400 to 1200 nm is 0.1% or less. May be formed by the same means as the dielectric multilayer film A.
The optical filter or the near-infrared absorbing filter may have a plurality of light-shielding layers, or a Fresnel zone plate or the like may be formed by the plurality of light-shielding layers.

The method for forming the functional layer is not particularly limited, but for example, a coating agent such as an antireflection agent, a hard coating agent and / or an antistatic agent is melt-molded or cast-molded on a base material, a dielectric multilayer film or the like. There is a way to do it.
It can also be produced by applying a curable composition containing a coating agent or the like on a base material or a dielectric multilayer film with a bar coater or the like, and then curing the composition by irradiation with ultraviolet rays or the like.

Examples of the coating agent include ultraviolet (UV) / electron beam (EB) curable resin and thermosetting resin, and specific examples thereof include vinyl compounds, urethane-based, urethane acrylate-based, acrylate-based, and epoxy. Examples include based and epoxy acrylate based resins.
Examples of the curable composition containing these coating agents include vinyl-based, urethane-based, urethane acrylate-based, acrylate-based, epoxy-based and epoxy acrylate-based curable compositions.

Further, the curable composition may contain a polymerization initiator and an organic solvent. Known polymerization initiators and organic solvents can be used.
Each of these may be used alone or in combination of two or more.

In addition, for the purpose of improving the adhesion between the base material and the functional layer and / or the dielectric multilayer film and the adhesion between the functional layer and the dielectric multilayer film, a corona is formed on the surface of the base material, the functional layer or the dielectric multilayer film. Surface treatment such as treatment or plasma treatment may be performed.

<Near infrared absorption optical filter>
The near-infrared absorbing optical filter has a dielectric multilayer film, a substrate, and a near-infrared absorbing layer.
In this module 2, among the dielectric multilayer film, the substrate, and the near-infrared absorbing layer, the one provided on the optical sensor side is the near-infrared absorbing layer or the dielectric multilayer film (however, the most optical sensor). When a dielectric multilayer film is provided on the side, the side opposite to the optical sensor of the dielectric multilayer film is a near-infrared absorbing layer). Specifically, for example, (a) dielectric multilayer film, substrate, near-infrared absorbing layer, optical sensor in that order, (b) dielectric multilayer film, substrate, near-infrared absorbing layer, dielectric multilayer film, optical sensor. Order, (c) substrate, dielectric multilayer film, near-infrared absorbing layer, optical sensor order, (d) substrate, dielectric multilayer film, near-infrared absorbing layer, dielectric multilayer film, optical sensor order, (e) Dielectric multilayer film, substrate, dielectric multilayer film, near-infrared absorbing layer, optical sensor, or (f) dielectric multilayer film, substrate, dielectric multilayer film, near-infrared absorbing layer, dielectric multilayer film, optics The order of the sensors can be mentioned.
A configuration example of the near-infrared absorbing optical filter is shown in FIG.

Specifically, the near-infrared absorbing optical filter is preferably a laminate of the optical filter and the near-infrared absorbing filter (the near-infrared absorbing filter is provided on the optical sensor side), and the near-infrared absorbing optical filter. Among the dielectric multilayer films, the dielectric multilayer film in contact with the substrate in the above (a) to (f) is the dielectric multilayer film A in the optical filter and the dielectric multilayer film in the near-infrared absorbing optical filter. In b), (e) and (f), the dielectric multilayer film provided on the optical sensor side is the dielectric multilayer film B in the near-infrared absorbing filter, and the substrate in the near-infrared absorbing optical filter is the substrate in the optical filter. A, The near-infrared absorbing layer in the near-infrared absorbing optical filter corresponds to the near-infrared absorbing layer in the near-infrared absorbing filter, respectively, and the same is true in the above-described preferred embodiment.

The near-infrared absorbing optical filter may transmit light having at least a part of wavelengths of 800 to 1200 nm.
When the wavelength of the highest transmittance of the light incident from the vertical direction of the near-infrared absorbing optical filter is 800 to 1200 nm and the wavelength is λOA _MAX (nm).
Wavelength RamudaOA _MAX, like the wavelength .lamda.o _MAX of the optical _{filter, 830nm ≦ λOA MAX ≦ 860nm,} 930nm ≦ λOA MAX ≦ 960nm or, preferably satisfies the 1100nm ≦ λOA _MAX ≦ 1150nm.

The near-infrared absorbing optical filter is characterized in that the transmittance TOA (λOA _MAX ) [× 100%] at the λOA _MAX [nm] is 0.2 to 0.85.
The TOA (λOA _MAX ) is preferably 0.25 or more, preferably 0.82 or less.
When TOA (λOA _MAX ) is at least the lower limit of the above range, it becomes easy to secure the sensitivity required for sensing, and when it is at least the upper limit of the above range, the ghost intensity can be easily reduced.

The near-infrared absorbing optical filter preferably satisfies the following requirement (2).
Requirement (2): The average value of the reflectance of light incident on the near-infrared absorbing optical filter from the optical sensor side at an angle of 30 ° at a wavelength (λOA _MAX -15) nm to (λOA _MAX +15) nm. If the average value of the reflectance of 8.2% or less is within the above range, it can be expected that the ghost can be further reduced.
The average value of the reflectance is more preferably 5% or less, further preferably 4% or less, and particularly preferably 3% or less.
A near-infrared absorbing optical filter satisfying the requirement (2) can be obtained, for example, by forming an antireflection layer.

The near-infrared absorbing optical filter preferably satisfies the following requirements (3') and (4') for the same reason as described above.

Requirement (3'): The average value of the transmittance of light incident from the vertical direction of the near-infrared absorbing optical filter at a wavelength of 400 nm to (λOA _MAX -30) nm is 5% or less. Near this requirement (3') is satisfied. By using an infrared absorbing optical filter, it is possible to block light from visible rays to near infrared rays other than the near infrared rays (transmitted near infrared rays) for detection, and the noise of the obtained optical sensor module can be easily reduced. It is preferable from the viewpoint that the sensitivity can be further improved.
The average value of the transmittance in the requirement (3') is more preferably 3% or less, further preferably 2% or less, and particularly preferably 1% or less.

Requirement (4'): The average value of the transmittance of light incident from the vertical direction of the near-infrared absorbing optical filter at a wavelength (λOA _MAX +40) nm to 1250 nm is 5% or less. Near-infrared ray satisfying this requirement (4'). By using an absorption optical filter, it is possible to block light having a wavelength longer than that of near-infrared rays for detection, the noise of the obtained optical sensor module can be easily reduced, and the sensitivity can be further improved. It is preferable from the viewpoint of.
The average value of the transmittance in the requirement (4') is more preferably 3% or less, further preferably 2% or less, and particularly preferably 1% or less.

The near-infrared absorbing optical filter preferably satisfies the following requirement (5').
Requirement (5'): The average value of the transmittance of light incident from the vertical direction of the near-infrared absorbing optical filter at a wavelength (λOA _MAX -15) nm to (λOA _MAX +15) nm is 20 to 90%.
By using a near-infrared absorbing optical filter that satisfies this requirement (5'), the sensitivity of the optical sensor can be kept high, and it is preferable from the viewpoint of reducing ghosts and the like.
The average value of the transmittance in the requirement (5') is more preferably 20 to 85%, further preferably 25 to 85%, and particularly preferably 25 to 80%.
It is preferably at least the lower limit of the above range from the viewpoint that the sensor sensitivity can be easily secured. Further, it is preferably not more than the upper limit of the above range from the viewpoint that the intensity of absorbing the light incident on the sensor side of the near-infrared absorbing optical filter is sufficient and the ghost can be further reduced.

[Other functional layers]
The near-infrared absorbing optical filter is used for improving the surface hardness of the substrate, the dielectric multilayer film and / or the near-infrared absorbing layer, improving the chemical resistance, preventing antistatic and scratch erasing, etc., as long as the effects of the present invention are not impaired. For the purpose, a functional layer such as an antireflection layer, a hard coat film, an antistatic film, an adhesion assisting film, a stress adjusting film, a conductive film, and a light shielding layer may be appropriately provided.
Details of these functional layers are as described in the column of the near-infrared absorbing filter.
The near-infrared absorbing optical filter may include one layer or two or more of these functional layers. When two or more functional layers are included, two or more similar layers may be included, or two or more different layers may be included.

In particular, the near-infrared absorbing optical filter preferably has an antireflection layer on the optical sensor side that prevents reflection of light having a wavelength of at least a part of the wavelengths of 800 to 1200 nm. As such an antireflection layer, the dielectric multilayer film B is preferable.

Further, the near-infrared absorbing optical filter preferably has a light-shielding layer as shown in FIG. 6D, depending on the desired application.
The light-shielding layer is a layer having a light transmittance of 0.1% or less at any wavelength of 400 to 1200 nm.
The configuration example of the light-shielding layer is not particularly limited as long as it is a layer that satisfies such transmittance, but for example, resins such as thermosetting resin, ultraviolet curable resin, and thermoplastic resin, pigments, dyes, and the like. Examples thereof include those obtained by mixing a metal, a metal oxide, a metal nitride, or the like and curing the mixture if necessary. Further, a layer made of a metal, a metal oxide, a metal nitride or the like is formed on the near-infrared absorbing optical filter so that the light transmittance at any wavelength of 400 to 1200 nm is 0.1% or less. It may be formed by the same means as the dielectric multilayer film A.
The near-infrared absorbing optical filter may have a plurality of light-shielding layers, or a Fresnel zone plate or the like may be formed by the plurality of light-shielding layers.

The thickness of the functional layer is preferably 0.1 to 20 μm, more preferably 0.5 to 10 μm, and particularly preferably 0.7 to 5 μm.

<Optical sensor>
The optical sensor is not particularly limited as long as it is an optical sensor that uses near infrared rays, and a conventionally known optical sensor can be used. It can be said that the present invention provides a method for reducing the ghost of a conventionally known optical sensor using such near infrared rays.
The members constituting the optical sensor include members made of silicon, black silicon, InGaAs, etc., and photoelectrics that convert light of a specific wavelength into an electric signal such as an organic photoelectric conversion film, a rectena, a graphene sensor, and a metamaterial sensor. A conversion element can be used. Further, the optical sensor may have a time-of-flight distance measuring mechanism.

The optical sensor may have a polarizing filter, a wire grid, or the like from the viewpoint of suppressing stray light.
Further, as the optical sensor, an optical sensor in which the sensitivity of the wavelength in the visible light region is reduced via a color filter or the like is preferable from the viewpoint of reducing noise and the like. Examples of the near-infrared optical sensor in which the sensitivity of the wavelength in the visible light region is reduced via a color filter include the optical sensor described in JP-A-2017-216678.

-Black Silicon As the optical sensor 5 and the ambient light sensor 114 in FIG. 7, it is preferable to use a member made of black silicon.
Black silicon can be obtained, for example, by irradiating a silicon wafer with a laser in a specific atmosphere to form minute spikes on the silicon surface. When a member made of black silicon is used, the light receiving sensitivity in the near infrared band is higher than that when a silicon photodiode is used, so that it is more preferably used.
Examples of commercially available optical sensors using black silicon include the XQE series manufactured by Sionyx.

≪Optical sensor unit≫
As an example of using this module, FIG. 7 shows a configuration example of an optical sensor unit using this module 1.
As shown in FIG. 7A, the optical sensor unit includes an optical sensor module 1 having an optical filter 3, a near-infrared absorption filter 4, and an optical sensor 5, and a light source unit 101 having a built-in light source 102. May be good. As shown in FIG. 7B, it may have a lens (group) or an optical element 2 having a lens function, and may be an image pickup apparatus or a camera module. For scanning the light source, as shown in FIGS. 7C and 7D, a light source scanning unit 111 including a scanning optical element 112 such as a polygon mirror, MEMS, or a phased array may be provided. The light source unit, the optical sensor module, the lens (group), and the like used in the optical sensor unit may be one or a plurality, respectively.

The optical sensor unit may have an ambient light sensor unit 113 including an ambient light sensor 114 as shown in FIG. 7 (E). It is more preferable to have the ambient light sensor unit 113 from the viewpoint that noise can be offset and the sensitivity can be increased.
Further, based on the obtained information, a solid-state authentication device, a distance measuring device, a biometric authentication device, or the like may be used via a signal processing device as shown in FIGS. 7A to 7E.

-Light source As the light source 102, an LED having a maximum emission wavelength at a wavelength of 800 to 1150 nm, an organic LED, a laser diode, a Yb laser, a photonic crystal surface emitting laser diode (PCSEL), a vertical resonator surface emitting laser (VCSEL), or the like can be used. Can be used.
PCSEL or VCSEL is more preferable because of the steepness of the emission wavelength. Examples of PCSEL include L13395-04 manufactured by Hamamatsu Photonics Co., Ltd. Examples of the VCSEL include HV94-0015M3 manufactured by Optwell.

-Optical element As the optical element 2 or 2', for example, a glass lens, a resin lens, a Fresnel zone plate, a diffractive optical element, a metal lens, or a meta surface can be used. An antireflection layer made of a dielectric multilayer film B may be provided on these surfaces, and a near-infrared absorber, an ultraviolet absorber, a visible light absorber, a mold release agent, and a fluorescent quencher are included in the components constituting these. , It may have a layer containing an additive such as a metal complex compound. It is preferable to have a Fresnel zone plate, a diffractive optical element, or a metal lens from the viewpoint of easily reducing the height of the obtained optical sensor module.

Hereinafter, the present invention will be described in more detail based on Examples, but the present invention is not limited to these Examples.

<Molecular weight>
The molecular weight of the resin was measured by the following method in consideration of the solubility of each resin in the solvent and the like.
Using a GPC apparatus (HLC-8220 type, column: TSKgelα-M, developing solvent: THF) manufactured by Toso Co., Ltd., the weight average molecular weight (Mw) and the number average molecular weight (Mn) in terms of standard polystyrene were measured.

<Glass transition temperature (Tg)>
The glass transition temperature of the resin was measured using a differential scanning calorimeter (DSC6200) manufactured by Hitachi High-Tech Science Co., Ltd. at a heating rate of 20 ° C. per minute under a nitrogen stream.

<Refractive index>
The refractive index of the dielectric film was calculated by the following procedure.
Reflectance that changes as a film is formed on a glass substrate (SCHOTT, D263, thickness 0.3 mm) while measuring the reflectance using a reflectance monitor that uses light with a wavelength of 550 nm as a light source. The dielectric film was formed until the film thickness showed the seven maximum values and the minimum values. Using a spectrophotometer (U-4100) manufactured by Hitachi High-Technologies Corporation, the wavelength of light incident on the obtained dielectric film-coated substrate at an angle of 5 ° from the vertical direction has a wavelength of 300 to 1900 nm. The transmittance and absolute reflectance for each wavelength were measured in an environment of room temperature of 25 ° C. and humidity of 50%. From the obtained transmittance for each wavelength of 5 ° incident and absolute reflectance for each wavelength of 5 ° incident, the refractive index of light having a wavelength of 550 nm was calculated using simulation software Ethential Macleod (manufactured by Thin Film Center).

When the dielectric film formed on each layer in the dielectric multilayer film and the substrate other than the glass substrate is formed under the same film forming conditions as the film forming conditions in the above method, these refractive indexes are as described above. It was considered to be the same as the refractive index of the dielectric film obtained by the method.

<Spectroscopic transmittance>
The transmittance of the optical filter and near-infrared absorption filter in each wavelength range is determined by allowing them to stand in a dark environment at room temperature of 25 ° C and humidity of 60% for one week, and then spectrophotometer manufactured by Hitachi High-Technologies Corporation. Measurement was performed using (U-4100) in an environment of room temperature of 25 ° C. and humidity of 50%.
Here, as shown in FIG. 8A, the transmittance of light incident from the vertical direction of the optical filter or the near-infrared absorbing filter is such that the light 202 is transmitted from the vertical direction with respect to the optical filter 3 or the near-infrared absorbing filter 4. Then, the light transmitted through the optical filter 3 or the near-infrared absorption filter 4 is measured by the spectrophotometer 201, and the light transmitted through the optical filter 3 or the near-infrared absorption filter 4 at an angle of 30 ° from the vertical direction. As shown in FIG. 8B, the rate is such that light 202'is incident at an angle of 30 ° from the vertical direction of the optical filter 3 or the near-infrared absorbing filter 4, and then the optical filter 3 or the near-infrared absorbing filter 4 is transmitted. The light was measured with a spectrophotometer 201.
The measurement was performed in the same manner for the near-infrared absorbing optical filter.

<Spectroscopic reflectance>
The reflectance of the optical filter and near-infrared absorption filter in each wavelength range is determined by allowing them to stand in a dark environment at room temperature of 25 ° C and humidity of 60% for one week, and then spectrophotometer manufactured by Hitachi High-Technologies Corporation. Measurement was performed using (U-4100) in an environment of room temperature of 25 ° C. and humidity of 50%.
Here, the reflectance of light incident from an angle of 30 ° from the vertical direction of the optical filter or the near-infrared absorbing filter is 30 from the vertical direction of the optical filter 3 or the near-infrared absorbing filter 4, as shown in FIG. 8C. Light 202'was incident from an angle of °, and the reflected light was measured with a spectrophotometer 201.
The measurement was performed in the same manner for the near-infrared absorbing optical filter.

<Ghost amount>
At wavelengths of 300 to 1200 nm, the wavelength-specific transmission rate TO ₀ (λ) [× 100%] of light incident from the direction perpendicular to the surface of the optical filter, and 30 ° from the direction perpendicular to the surface of the optical filter on the optical sensor side. Wavelength-specific reflectance RO ₃₀ (λ) [× 100%] of light incident at an angle, wavelength-specific transmission TA ₀ (λ) [× 100%] of light incident from the direction perpendicular to the surface of the near-infrared absorption filter ], Wavelength-specific transmission of light incident at an angle of 30 ° from the vertical direction of the surface of the near-infrared absorption filter TA ₃₀ (λ) [× 100%], from the vertical direction of the surface of the near-infrared absorption filter on the optical sensor side Wavelength-specific reflectance RA ₃₀ (λ) [× 100%] of light incident at an angle of 30 °, wavelength-specific transmission TOA ₀ (λ) of light incident from the direction perpendicular to the surface of the near-infrared absorbing optical filter. [× 100%], using the wavelength-specific reflectance ROA ₃₀ (λ) [× 100%] of the light incident at an angle of 30 ° from the vertical direction of the surface of the near-infrared absorbing optical filter on the optical sensor side, FIG. 1 ( The amount of ghost was evaluated by the following formula 1 in the case of the optical sensor modules arranged in A) and (C), and by the following formula 2 in the case of the optical sensor modules arranged in FIG. 1 (B).
For example, at a wavelength of 300 nm, the transmittance of light incident from the direction perpendicular to the surface of the optical filter is TO ₀ (300), and at a wavelength of 1200 nm, the wavelength of light incident from the direction perpendicular to the surface of the optical filter. Another transmittance was set to TO ₀ (1200).

In the case of the optical sensor module arranged in FIG. 1 (A), the ghost may have the optical paths 12 and 13 shown in FIG. 3 (B), both of which cause sensing failure. The ghost amount 1 in the above formula 1 corresponds to the formula for estimating the sum of these two ghost intensities.

In the case of the optical sensor module arranged in FIG. 1 (B), the ghost may have 14 optical paths shown in FIG. 3 (C), causing a sensing failure. The ghost 2 of the above formula 2 corresponds to the formula for estimating the ghost intensity.

As shown in (A) and (B) of FIG. 2 and (A) of FIG. 3, the ghost amount 3 in the optical sensor module including only the optical filter (not including the near-infrared absorbing filter and the near-infrared absorbing optical filter) is , TA ₀ (λ) and TA ₃₀ (λ) in the ghost amount 1 are 100% (TA ₀ (λ) = 1, TA ₃₀ (λ) = 1) at any wavelength, and RA ₃₀ (λ). Was 0% (RA ₃₀ (λ) = 0) at any wavelength, and was evaluated by the following equation 3.

As shown in FIG. 3D, the ghost amount 4 in the optical sensor module provided with the optical filter between the near-infrared absorbing filter and the optical sensor was evaluated by the following formula 4.
The transmittance of light incident on the surface of the optical filter at an angle of 30 ° from the vertical direction at a wavelength of 300 to 1200 nm was defined as TO ₃₀ (λ) [× 100%].

<Sensor sensitivity>
The sensor sensitivity was evaluated by the following formula 5. Note that λO _MAX in Equation 5 is a wavelength having the highest transmittance of light incident on the surface of the optical filter from the direction perpendicular to the surface of the optical filter at a wavelength of 800 to 1200 nm.
Equation 5:
Sensor sensitivity = {(average value [× 100%] of the transmittance of light incident from the vertical direction of the optical filter at wavelength (λO _MAX -15 nm) to (λO _MAX + 15 nm)) × (wavelength (λO _MAX -15 nm)) ~ (ΛO _MAX + 15nm), the average value of the transmittance of light incident from the vertical direction of the near-infrared absorption filter [× 100%])}

The sensor sensitivity when the near-infrared absorbing optical filter was used was evaluated by the following formula 5'. The λOA _MAX in the formula 5'is a wavelength having the highest transmittance of light incident on the surface of the near-infrared absorbing optical filter from the direction perpendicular to the surface of the near-infrared absorbing optical filter at a wavelength of 800 to 1200 nm.
Equation 5': Average value of the transmittance of light incident from the vertical direction of the optical near-infrared absorbing optical filter [× 100%] at sensor sensitivity = wavelength (λOA _MAX -15 nm) to (λOA _MAX + 15 nm).

Further, the sensor sensitivity in the optical sensor module provided with only the optical filter (not provided with the near-infrared absorbing filter and the near-infrared absorbing optical filter) was evaluated by the following formula 5''.
Equation 5'': Average value [× 100%] of the transmittance of light incident from the vertical direction of the optical filter when the sensor sensitivity = wavelength (λO _MAX -15 nm) to (λO _MAX + 15 nm).

<Relative ghost strength>
If the sensor sensitivity drops, increase the sensor gain to correct the sensitivity. In this case, the ghost intensity is also strongly detected. Therefore, the relative ghost intensity obtained from the value divided by the sensor sensitivity was calculated according to the following equations 6 to 9 and used as an index of the ghost intensity.

Equation 6: Relative ghost intensity = (ghost amount 1) / (sensor sensitivity)
Equation 7: Relative ghost intensity = (ghost amount 2) / (sensor sensitivity)
Equation 8: Relative ghost intensity = (ghost amount 3) / (sensor sensitivity)
Equation 9: Relative ghost intensity = (ghost amount 4) / (sensor sensitivity)

[Synthesis example]
The near-infrared absorber used in the following test example was synthesized by a generally known method. As a general synthesis method, for example, Japanese Patent No. 3366697, Japanese Patent No. 2846091, Japanese Patent No. 2864475, Japanese Patent No. 3703869, Japanese Patent Application Laid-Open No. 60-228448, Japanese Patent Application Laid-Open No. 1-146846, Japanese Patent Application Laid-Open No. 1-2289960, Japanese Patent No. 4081149, Japanese Patent Application Laid-Open No. 63-124054, "Parthalocyanine-Chemistry and Function-" (IPC, 1997), Japanese Patent Application Laid-Open No. 2007-169315, JP-A-2009 Examples thereof include the methods described in Japanese Patent Application Laid-Open No. -108267, Japanese Patent Application Laid-Open No. 2010-241873, Japanese Patent No. 3699464, and Japanese Patent No. 4740631.

[Resin Synthesis Example 1]
8-Methyl-8-methoxycarbonyltetracyclo [4.4.0.12,5.17,10] dodeca-3-ene expressed by the following formula (X ₁ ) 100 parts by mass, 1-hexene (molecular weight adjustment) 18 parts by mass of agent) and 300 parts by mass of toluene (solvent for ring-opening polymerization reaction) were placed in a reaction vessel substituted with nitrogen, and this solution was heated to 80 ° C. Next, 0.2 parts by mass of a toluene solution of triethylaluminum (0.6 mol / liter) and a toluene solution of methanol-modified tungsten hexachloride (concentration 0.025 mol / liter) 0 were added to the solution in the reaction vessel as a polymerization catalyst. .9 parts by mass was added, and this solution was heated and stirred at 80 ° C. for 3 hours to cause a ring-opening polymerization reaction to obtain a ring-opening polymer solution. The polymerization conversion rate in this polymerization reaction was 97%.

1,000 parts by mass of the ring-opening polymer solution thus obtained was charged into an autoclave, and RuHCl (CO) [P (C ₆ H ₅ ) ₃ ] ₃ was added to the ring-opening polymer solution by 0.12 mass. The hydrogenation reaction was carried out by heating and stirring for 3 hours under the conditions of a hydrogen gas pressure of 100 kg / cm ² and a reaction temperature of 165 ° C. After cooling the obtained reaction solution (hydrogenated polymer solution), hydrogen gas was released. This reaction solution was poured into a large amount of methanol to separate and recover the coagulated product, which was dried to obtain a hydrogenated polymer (hereinafter, also referred to as "resin A"). The obtained resin A had a number average molecular weight (Mn) of 32,000, a weight average molecular weight (Mw) of 137,000, and a glass transition temperature (Tg) of 165 ° C.

[Example 1]
RF power: 300 W, (oxygen / (argon + hydrogen + oxygen)) = 0. using silicon as a vapor deposition source on a glass base material (manufactured by SCHOTT, D263, thickness 0.1 mm) using an RF magnetron sputtering device. A silica layer (SiO ₂ : light with a wavelength of 550 nm having a refractive index of 1.47) and (hydrogen / (argon + hydrogen)) = 0, obtained by forming a film while supplying a gas having a mixing ratio of 2 at 20 sccm. A dielectric multilayer film formed by alternately laminating silicon layers (a-Si: the refractive index of light having a wavelength of 550 nm is 4.1) obtained by forming a film while supplying 20 sccm of a gas having a mixing ratio of 05. Provided. Specifically, the dielectric multilayer film of design (I) shown in Table 5 is provided on one surface of the substrate, the dielectric multilayer film of design (II) is provided on the other surface of the substrate, and the thickness is 0. A 107 mm optical filter 1 was obtained.
The spectral transmittance and spectral reflectance of the obtained optical filter 1 were evaluated. The results are shown in Table 14. The spectra of the obtained spectral transmittance and the spectral reflectance are shown in FIGS. 9 (A) and 9 (B), respectively.
The λO _{MAX of the} optical filter 1 was 850 nm.

100 parts by mass of the resin A obtained in Resin Synthesis Example 1, 0.015 parts by mass of the compound (Z-45) in Table 2 [maximum absorption wavelength in resin A 898 nm], and methylene chloride are added to the container to add the resin. A solution (A1) having a concentration of 20% by mass was prepared. The obtained solution (A1) was cast on a smooth glass plate, dried at 20 ° C. for 8 hours, and then peeled off from the glass plate. The peeled coating film was further dried under reduced pressure at 100 ° C. for 8 hours to obtain a near-infrared absorbing layer 1 having a thickness of 0.1 mm.

Using an ion-assisted vacuum deposition apparatus, starting pressure 0.0001 Pa, vapor deposition temperature 120 ° C., and using a mixed gas of oxygen and argon as the supply gas to the ion gun, the ion current density (μA / cm ² ) per unit area was determined. Silica layer (SiO ₂ : wavelength 550 nm) by performing ion assist under the condition that the unit film formation rate divided by the film formation rate (Å / sec) and the ion current density per area are 8 μA · sec / Å · cm ² . By forming a refractive index of light of 1.47) and performing ion assist under the conditions of a unit film deposition rate and an ion current density per area of 20 μA / sec / Å / cm ² , the titanium oxide layer (TiO ₂ : The dielectric multilayer film of the design (IX) of Table 6 is provided on both sides of the near-infrared absorbing layer 1 in which the refractive index of light having a wavelength of 550 nm is 2.48) and these layers are alternately laminated. As a result, a near-infrared absorbing filter 1 having a thickness of 0.106 mm was obtained. At this time, the film thickness of the layer having a physical film thickness of 60 nm or less was controlled by a film thickness monitor using a crystal oscillator.
The spectral transmittance and spectral reflectance of the obtained near-infrared absorbing filter 1 were evaluated. The results are shown in Table 14 and FIG.

An optical sensor module was obtained in which the obtained optical filter 1 and the near-infrared absorbing filter 1 were provided so as to have the same positional relationship as in FIG. 1 (A). The ghost amount 1 of the obtained optical sensor module was calculated according to the above equation 1. Further, the sensor sensitivity was calculated according to the above equation 5. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 4.1, and an optical sensor module having a low ghost intensity was obtained.
The ghost intensity for each wavelength in the optical sensor module obtained in Example 1 is shown by a solid line in FIG.

[Example 2]
Except that in Example 1, 0.008 parts by mass of compound (Z-35) [maximum absorption wavelength in resin A] of Table 1 was used instead of 0.015 parts by mass of compound (Z-45). An optical sensor module was obtained in the same manner as in Example 1, and the ghost amount 1 and the sensor sensitivity were calculated. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 4.9, and an optical sensor module having a low ghost intensity was obtained.

[Example 3]
An optical sensor module was obtained in the same manner as in Example 2 except that the amount of the compound (Z-35) used was changed to 0.012 parts by mass in Example 2, and the ghost amount 1 and the sensor sensitivity were calculated. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 3.9, and an optical sensor module having a low ghost intensity was obtained.

[Example 4]
Except for the fact that in Example 1, 0.023 parts by mass of compound (S-5) [maximum absorption wavelength in resin A] of Table 3 was used instead of 0.015 parts by mass of compound (Z-45). An optical sensor module was obtained in the same manner as in Example 1, and the ghost amount 1 and the sensor sensitivity were calculated. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 4.0, and an optical sensor module having a low ghost intensity was obtained.

[Example 5]
Except that in Example 4, 0.1 part by mass of compound (S-3) [maximum absorption wavelength in resin A] of Table 3 was used instead of 0.023 parts by mass of compound (S-5). An optical sensor module was obtained in the same manner as in Example 4, and the ghost amount 1 and the sensor sensitivity were calculated. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 1.3, and an optical sensor module having a low ghost intensity was obtained.

[Example 6]
Optical in the same manner as in Example 1 except that the dielectric multilayer films (III) and (IV) shown in Table 7 were used instead of the dielectric multilayer films (I) and (II) in Example 1. Filter 2 was obtained. The spectral transmittance and spectral reflectance of the obtained optical filter 2 were evaluated. The results are shown in Table 14. The spectra of the obtained spectral transmittance and the spectral reflectance are shown in FIGS. 10 (A) and 10 (B), respectively.
The λO _{MAX of the} optical filter 2 was 946 nm.

Further, instead of the dielectric multilayer film (IX) on the near-infrared absorbing layer (hereinafter, also referred to as “near-infrared absorbing layer 2”) obtained in Example 4, the dielectric multilayer film (XII) shown in Table 8 is used. ) Was provided, and a near-infrared absorbing filter 2 was obtained in the same manner as in Example 4.
An optical sensor module was obtained in the same manner as in Example 1 except that the obtained optical filter 2 and the near infrared absorption filter 2 were used, and the ghost amount 1 and the sensor sensitivity were calculated. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 2.0, and an optical sensor module having a low ghost intensity was obtained.

[Example 7]
In Example 6, instead of the compound (S-5) 0.023 parts by _{weight, R H1, R H2, R} H3, R H4 in formula (H) is an isobutyl group, R _H5, R _H6, R _H7, except that R _H8 was used compound (H1) [maximum absorption wavelength 1000nm in the resin a] 0.066 parts by weight of bromine atoms in the same manner as in example 6 to obtain an optical sensor module, ghost of 1 And the sensor sensitivity were calculated. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 4.1, and an optical sensor module having a low ghost intensity was obtained.

[Example 8]
In Example 6, instead of 0.023 parts by mass of compound (S-5), R ¹ in the above formula (D1) is an isobutyl group, R ² is a hydrogen atom, and X is (X-21) in Table 4. An optical sensor module was obtained in the same manner as in Example 6 except that 0.08 parts by mass of compound (D1-1) [maximum absorption wavelength in resin A] was used, and the ghost amount 1 and the sensor sensitivity were calculated. .. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 1.3, and an optical sensor module having a low ghost intensity was obtained.

[Example 9]
Optical in the same manner as in Example 8 except that the dielectric multilayer films (V) and (VI) shown in Table 9 were used instead of the dielectric multilayer films (III) and (IV) in Example 8. Filter 3 was obtained. The spectral transmittance and the spectral reflectance of the obtained optical filter 3 were evaluated. The spectra of the obtained spectral transmittance and the spectral reflectance are shown in FIGS. 11 (A) and 11 (B), respectively.
The λO _{MAX of the} optical filter 3 was 1138 nm.

Further, in Example 8, a near-infrared absorbing layer 3 was obtained in the same manner as in Example 8 except that the amount of the compound (D1-1) used was changed to 0.063 parts by mass. Example 8 except that the obtained near-infrared absorbing layer 3 is provided with the dielectric multilayer film (XV) shown in Table 10 instead of the dielectric multilayer film (XII) to obtain the near-infrared absorbing filter 3. An optical sensor module was obtained in the same manner as above, and the ghost amount 1 and the sensor sensitivity were calculated. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 0.9, and an optical sensor module having a low ghost intensity was obtained.

[Example 10]
100 parts by mass of the resin A obtained in Resin Synthesis Example 1, 0.3 parts by mass of the compound (Z-45) in Table 2 [maximum absorption wavelength in resin A 898 nm], and methylene chloride are added to the container to add the resin. A solution (A10) having a concentration of 13% by mass was prepared.

Further, in Example 1, glass was obtained in the same manner as in Example 1 except that the dielectric multilayer films (I) and (II) were changed to the dielectric multilayer films (VII) and (VIII) shown in Table 11. A laminate 1 was obtained by providing a dielectric multilayer film (VII) on one surface of a base material (substrate) and providing a dielectric multilayer film (VIII) on the other surface.

The following curable composition solution (1) is applied by spin coating on the dielectric multilayer film (VIII) of the obtained laminate 1, and then heated on a hot plate at 80 ° C. for 2 minutes to obtain a solvent. Was volatilized and removed to form a resin layer that functions as an adhesive layer with a resin layer described later. At this time, the coating conditions of the spin coater were adjusted so that the film thickness of the resin layer was about 0.8 μm.

Curable composition solution (1): Isocyanic acid ethylene oxide-modified triacrylate (trade name: Aronix M-315, manufactured by Toa Synthetic Co., Ltd.) 30 parts by mass, 1,9-nonanediol diacrylate 20 parts by mass, methacrylic acid 20 parts by mass, 30 parts by mass of glycidyl methacrylate, 5 parts by mass of 3-glycidoxypropyltrimethoxysilane, 5 parts by mass of 1-hydroxycyclohexylbenzophenone (trade name: IRGACURE184, manufactured by Ciba Specialty Chemicals Co., Ltd.), and , Sun Aid SI-110 base agent (manufactured by Sanshin Chemical Industry Co., Ltd.) 1 part by mass was mixed and dissolved in propylene glycol monomethyl ether acetate so that the solid content concentration became 50% by mass, and then Millipore with a pore size of 0.2 μm. Filtered solution

Next, the solution (A10) is applied onto the resin layer using an applicator under conditions such that the film thickness after drying is 5 μm, and the solution is heated on a hot plate at 80 ° C. for 5 minutes. The near-infrared absorbing layer 4 was formed by volatilizing and removing. Next, the dielectric multilayer film (VII) side is exposed using a conveyor type exposure machine (exposure amount: 1 J / cm ² , illuminance: 200 mW), and then baked in an oven at 180 ° C. for 5 minutes to be close to the laminate 1. A laminated structure with the infrared absorbing layer 4 was obtained.

An ion-assisted vacuum vapor deposition apparatus was used on the near-infrared absorbing layer 4 of the obtained laminated structure, a starting pressure of 0.0001 Pa, a vapor deposition temperature of 120 ° C., and a mixed gas of oxygen and argon as a supply gas to the ion gun. , Ion current density per unit area (μA / cm ² ) divided by film deposition rate (Å / sec) Unit deposition rate ・ Ion current density per area is 8 μA · sec / Å · cm ² By assisting, a silica layer (SiO ₂ : refractive index of light with a wavelength of 550 nm is 1.47) is formed, and the condition is that the unit film deposition rate and the ion current density per area are 20 μA · sec / Å · cm ² . By performing ion assist in, a titanium oxide layer (TiO ₂ : the refractive index of light having a wavelength of 550 nm is 2.48) is formed, and these layers are alternately laminated in the design (IX) of Table 11. A near-infrared absorbing optical filter 1 having a thickness of 0.114 mm was obtained by providing a dielectric multilayer film.
The spectral transmittance and spectral reflectance of the obtained near-infrared absorbing optical filter 1 were evaluated. The results are shown in Table 15.

An optical sensor module equipped with the obtained near-infrared absorbing optical filter 1 so as to have the same positional relationship as in FIG. 1 (B) was obtained. The ghost amount 2 of the obtained optical sensor module was calculated according to the above equation 2. Further, the sensor sensitivity was calculated according to the above formula 5'. The results are shown in Table 15.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 4.2, and an optical sensor module having a low ghost intensity was obtained.

[Example 11]
Near-infrared absorbing optics in the same manner as in Example 10 except that 0.16 parts by mass of compound (Z-35) in Table 1 was used instead of 0.3 parts by mass of compound (Z-45) in Example 10. Filter 2 was obtained. The spectral transmittance and spectral reflectance of the obtained near-infrared absorbing optical filter 2 were evaluated. The results are shown in Table 15. In addition, the obtained spectral transmittance and spectral reflectance spectra are shown in FIG.

Further, an optical sensor module was obtained in the same manner as in Example 10 except that the near-infrared absorbing optical filter 2 was used, and the ghost amount 2 and the sensor sensitivity were calculated. The results are shown in Table 15.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 5.1, and an optical sensor module having a low ghost intensity was obtained.
The ghost intensity for each wavelength in the optical sensor module obtained in Example 11 is shown by a solid line in FIG.

[Example 12]
In Example 11, an optical sensor module was obtained in the same manner as in Example 11 except that the amount of the compound (Z-35) used was changed to 1.18 parts by mass and the thickness of the near infrared absorbing layer was changed to 10 μm. The ghost amount 2 and the sensor sensitivity were calculated. The results are shown in Table 15.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 4.1, and an optical sensor module having a low ghost intensity was obtained.

[Example 13]
In Example 10, the optical sensor module was used in the same manner as in Example 10 except that 0.46 parts by mass of compound (S-5) in Table 3 was used instead of 0.3 parts by mass of compound (Z-45). Obtained, the ghost amount 2 and the sensor sensitivity were calculated. The results are shown in Table 15.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 4.2, and an optical sensor module having a low ghost intensity was obtained.

[Example 14]
In Example 13, instead of the dielectric multilayer films (VII) and (VIII), the dielectric multilayer films (X) and (XI) shown in Table 12 are provided, and the dielectric multilayer film (IX) is formed into a dielectric multilayer film (IX). A near-infrared absorbing optical filter 3 having a thickness of 0.114 mm was obtained in the same manner as in Example 13 except that the film (XII) was used. The near-infrared absorbing layer at this time was designated as the near-infrared absorbing layer 5.

Further, an optical sensor module was obtained in the same manner as in Example 10 except that the near-infrared absorbing optical filter 3 was used, and the ghost amount 2 and the sensor sensitivity were calculated. The results are shown in Table 15.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 2.6, and an optical sensor module having a low ghost intensity was obtained.

[Example 15]
In Example 14, 1.1 parts by mass of the compound (H1) was used instead of 0.46 parts by mass of the compound (S-5), and the same as in Example 14 except that the thickness of the base material was changed to 10 μm. An optical sensor module was obtained, and the ghost amount 2 and the sensor sensitivity were calculated. The results are shown in Table 15.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 2.8, and an optical sensor module having a low ghost intensity was obtained.

[Example 16]
An optical filter 2 was obtained in the same manner as in Example 6.
In addition, an ion-assisted vacuum vapor deposition apparatus was used on both sides of copper phosphate glass (manufactured by Matsunami Glass Industry Co., Ltd., BS11 polished to a thickness of 0.1 mm, equivalent to a near-infrared absorbing layer), and the starting pressure was 0.0001 Pa. , The vapor deposition temperature is 120 ° C., a mixed gas of oxygen and argon is used as the supply gas to the ion gun, and the ion current density (μA / cm ² ) per unit area is divided by the film formation rate (Å / sec). A silica layer (SiO ₂ : refractive index of light at a wavelength of 550 nm is 1.47) is formed by performing ion assist under the conditions of the film rate and the ion current density per area of 8 μA · sec / Å · cm ² . By performing ion assist under the conditions of unit film deposition rate and ion current density per area of 20 μA / sec / Å / cm ^2, a titanium oxide layer (TiO ₂ : refractive index of light with a wavelength of 550 nm is 2.48) can be obtained. A near-infrared absorbing filter 4 having a thickness of 0.101 mm was obtained by providing a dielectric multilayer film of the design (XII) of Table 13 which was formed and these layers were alternately laminated.

An optical sensor module was obtained in the same manner as in Example 1 except that the optical filter 2 and the near-infrared absorbing filter 4 were used, and the ghost amount 1 and the sensor sensitivity were calculated. The results are shown in Table 14.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 3.5, and an optical sensor module having a low ghost intensity was obtained.

[Comparative Example 1]
An optical filter 1 was obtained in the same manner as in Example 1. Using the obtained optical filter 1 and the sensor, an optical sensor module not provided with the near infrared absorption filter 1 was obtained. The ghost amount 3 of the obtained optical sensor module was calculated according to the above formula 3, and the sensor sensitivity was calculated according to the above formula 5 ″. The results are shown in Table 16.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 10.5, which was an optical sensor module having a high ghost intensity.
The ghost intensities for each wavelength in the optical sensor module obtained in Comparative Example 1 are shown by dotted lines in FIGS. 13 and 15.

[Comparative Example 2]
An optical filter 2 was obtained in the same manner as in Example 6. Using the obtained optical filter 2 and the sensor, an optical sensor module not provided with the near infrared absorption filter 2 was obtained. The ghost amount 3 of the obtained optical sensor module was calculated according to the above formula 3, and the sensor sensitivity was calculated according to the above formula 5 ″. The results are shown in Table 16.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 21.2. It was an optical sensor module having a high ghost intensity.

[Comparative Example 3]
An optical filter 3 was obtained in the same manner as in Example 9. Using the obtained optical filter 3 and the sensor, an optical sensor module not provided with the near infrared absorption filter 3 was obtained. The ghost amount 3 of the obtained optical sensor module was calculated according to the above formula 3, and the sensor sensitivity was calculated according to the above formula 5 ″. The results are shown in Table 16.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 19.4, which was an optical sensor module having a high ghost intensity.

[Comparative Example 4]
An optical sensor module was obtained in which the optical filter 1 and the near-infrared absorbing filter 1 obtained in the same manner as in Example 1 were provided so as to have the same positional relationship as in FIG. 3D. The ghost amount 4 of the obtained optical sensor module was calculated according to the above equation 4. Further, the sensor sensitivity was calculated according to the above equation 5. The results are shown in Table 16.
The relative ghost intensity obtained by dividing the ghost amount by the sensor sensitivity was 9.5, and although the near-infrared absorbing filter 1 was provided, the ghost reduction effect was small and the ghost intensity was high.

1 ... Optical sensor module 2 ... Optical element (group) or optical element having a lens function 2'... Flat optical element such as Fresnel zone plate or metal lens having a lens function 3 ... Optical filter 4 ...・ Near infrared absorption filter 5 ・ ・ ・ Optical sensor 6 ・ ・ ・ Optical sensor frame 7 ・ ・ ・ Module substrate 8 ・ ・ ・ Near infrared absorption optical filter 9 ・ ・ ・ Light-shielding layer 10 ・ ・ ・ Conventional optical sensor module 11 ・・ ・ Correctly sensed optical path 12 ・ ・ ・ Ghost generated by the optical path reflected on the surface of the near-infrared absorbing filter 13 ・ ・ ・ Ghost generated by the optical path reflected on the surface of the optical filter 14 ・ ・ ・ Ghost generated by the optical path reflected on the surface of the optical filter 14 ・ ・ ・ On the surface of the near-infrared absorbing optical filter Ghosts 21, 21'... by the reflected optical path Base material A
22, 22'... Dielectric multilayer film A
23, 23'... Functional layer 24 ... Light-shielding layer 25, 25'... Near infrared absorption layer 26, 26'... Dielectric multilayer film B
27, 27'... Functional layer 31 ... Substrate (base material A)
32, 32'... Dielectric multilayer film (dielectric multilayer film A)
34 ... light-shielding layer 35, 35'... near-infrared absorbing layer 36 ... dielectric multilayer film (dielectric multilayer film B)
101 ... Light source unit 102 ... Light source 103 ... Light source lens, light source diffractive optical element 111 ... Light source scanning unit 112 ... Scanning optical element 113 ... Ambient light sensor unit 114 ... Ambient light sensor 201 ... Detector (spectral photometric meter)
202, 202'... Incident ray

Claims (15)

A near-infrared absorbing filter having a near-infrared absorbing layer is provided between the optical sensor and an optical filter that transmits light having at least a part of the wavelengths of 800 to 1200 nm.
When the wavelength of the highest transmittance of the light incident from the vertical direction of the optical filter is λO _MAX (nm) at a wavelength of 800 to 1200 nm,
The average value of the transmittance of light incident from the vertical direction of the near-infrared absorbing filter at wavelengths (λO _MAX -15) nm to (λO _MAX +15) nm is 20 to 85%.
Optical sensor module. The optical sensor module according to claim 1, wherein the near-infrared absorbing filter satisfies the following requirement (1).
Requirement (1): The average value of the reflectance of light incident on the near-infrared absorbing filter from the optical sensor side at an angle of 30 ° at wavelengths (λO _MAX -15) nm to (λO _MAX +15) nm is 7. %Less than The optical sensor module according to claim 1 or 2, wherein the optical filter satisfies the following requirement (3).
Requirement (3): The average value of the transmittance of light incident from the vertical direction of the optical filter at a wavelength of 400 nm to (λO _MAX -30) nm is 5% or less. The optical sensor module according to any one of claims 1 to 3, wherein the optical filter satisfies the following requirement (4).
Requirement (4): The average value of the transmittance of light incident from the vertical direction of the optical filter at a wavelength (λO _MAX +40) nm to 1250 nm is 5% or less. The optical sensor module according to any one of claims 1 to 4, further comprising an antireflection layer for preventing reflection of light having a wavelength of at least a part of wavelengths of 800 to 1200 nm on the optical sensor side of the optical filter. .. Let the value of the transmittance of the light incident from the vertical direction of the optical filter at the λO _MAX [nm] be TO (λO _MAX ) [× 100%].
When the transmittance of light incident from the vertical direction of the near-infrared absorbing filter at the λO _MAX [nm] is set to TA (λO _MAX ) [× 100%].
TO (λO _MAX ) × TA (λO _MAX ) is 0.15 to 0.85,
The optical sensor module according to any one of claims 1 to 5. The optical sensor module according to any one of claims 1 to 6, which has a space between the optical sensor and the near-infrared absorbing filter. Wherein the wavelength .lamda.o _{MAX is, 830nm ≦ λO MAX ≦ 860nm,} 930nm ≦ λO MAX ≦ 960nm , or satisfy 1100nm ≦ λO _MAX ≦ 1150nm, optical sensor module according to any one of claims 1 to 7. Optical sensor and
A near-infrared absorbing optical filter having a dielectric multilayer film, a substrate, and a near-infrared absorbing layer is provided, and these are provided.
In order of dielectric multilayer film, substrate, near-infrared absorbing layer, optical sensor,
Dielectric multilayer film, substrate, near-infrared absorbing layer, dielectric multilayer film, optical sensor, in that order,
Substrate, dielectric multilayer film, near-infrared absorbing layer, optical sensor in that order,
Substrate, dielectric multilayer film, near-infrared absorbing layer, dielectric multilayer film, optical sensor, in that order,
Dielectric multilayer film, substrate, dielectric multilayer film, near-infrared absorbing layer, optical sensor in that order, or
A dielectric multilayer film, a substrate, a dielectric multilayer film, a near-infrared absorbing layer, a dielectric multilayer film, and an optical sensor are provided in this order.
The near-infrared absorbing optical filter transmits light having at least a part of wavelengths of 800 to 1200 nm.
When the wavelength of the highest transmittance of the light incident from the vertical direction of the near-infrared absorbing optical filter is 800 to 1200 nm and the wavelength is λOA _MAX (nm).
The transmittance TOA (λOA _MAX ) [× 100%] of the light incident from the vertical direction of the near-infrared absorbing optical filter at the λOA _MAX [nm] is 0.2 to 0.85.
Optical sensor module. The ninth aspect of the present invention, wherein the near-infrared absorbing optical filter has an antireflection layer for preventing reflection of light having a wavelength of at least a part of 800 to 1200 nm on the optical sensor side of the near-infrared absorbing layer. Optical sensor module. The optical sensor module according to claim 9 or 10, which satisfies the following requirement (2).
Requirement (2): The average value of the reflectance of light incident on the near-infrared absorbing optical filter from the optical sensor side at an angle of 30 ° at a wavelength (λOA _MAX -15) nm to (λOA _MAX +15) nm. 8.2% or less The optical sensor module according to any one of claims 9 to 11, which has a space between the optical sensor and the near-infrared absorbing optical filter. Wherein the wavelength RamudaOA _{MAX is, 830nm ≦ λOA MAX ≦ 860nm,} 930nm ≦ λOA MAX ≦ 960nm , or satisfy 1100nm ≦ λOA _MAX ≦ 1150nm, optical sensor module according to any one of claims 9-12. The optical sensor module according to any one of claims 1 to 13, wherein the near-infrared absorbing layer contains a near-infrared absorbing agent having a maximum absorption wavelength at a wavelength of 850 to 1200 nm. The optical sensor module according to any one of claims 1 to 14, wherein the near-infrared absorbing layer has a thickness of 3 to 150 μm.