JP2020123883A - Quantum optical device - Google Patents

Abstract

To provide a quantum optical device capable of suppressing an influence of high frequency noise generated by a high frequency signal.SOLUTION: Holding means 10 of a quantum optical device 1 selectively uses a high load-bearing structure retention tether 121, a DC signal tether 122 used for DC power supply and DC signal transmission, and a high frequency signal tether 123 used for transmission of a high frequency signal that can cause high frequency noise to hold a gas cell 20 equipped with temperature-raising means 30, a light emitting element 41, a light-receiving element 42, and a semiconductor element 50 used to realize a CPT capture function, etc. By spatially separating the wiring tether 122 for DC signals and the wiring tether 123 for high frequency signals, effects of high frequency noise is suppressed.SELECTED DRAWING: Figure 1

Description

The present invention relates to a quantum optical device that can be used in an atomic clock, an atomic compass, an atomic gyro, or the like that obtains a stable standard frequency signal by utilizing the interaction between a laser and an atom.

In a quantum optical device such as an atomic clock, a stable standard frequency signal is acquired from a gaseous alkali metal element, a rare gas or an inert gas by utilizing the interaction between a laser and an atom. In a quantum optical device, a gas filling container (gas cell) in which a gas is filled and sealed is indispensable, and for example, a gas cell using a glass tube is generally used. It is also known that the absorption lines of atoms, which are standard frequency signals, are sensitive to magnetic fields and angular acceleration, and by utilizing this property for high-sensitivity detection of momentum, atomic compasses and atomic gyros can be constructed. You can also In recent years, due to a strong demand for miniaturization of quantum optical devices, many developments of small gas cells using a wafer process such as anodic bonding and plasma etching have been reported.

As an example of the quantum optical device as described above, a schematic configuration of a CPT (Coherent Population Trapping) type quantum optical device 100 is shown in FIG. The constant current supplied from the current driver 101 is supplied to the light emitting element 4 via the bias tee 102 together with the high frequency modulation signal from the microwave oscillator 103. By applying a constant current to the light emitting element 104, the light emitting element 104 emits light at a constant frequency ν ₀ . When superimposing a high frequency modulated signal comprising vibration frequency [nu _mod the current the applied from the microwave oscillator 103, the light emitting element from _{104 ν 0 -ν mod, ν 0mod} , light having a frequency of ν ₀ + ν _mod is generated The light received by the light receiving element 106 is input to the gas cell 5 and passed through the optical path OP. In addition, although the higher order term of ν _mod is actually generated, its influence is negligible, so in the following, only three frequencies that are strongly generated will be focused.

The gas cell 5 is filled with a gaseous alkali metal element together with an inert rare gas serving as a buffer gas, and a CPT phenomenon occurs due to mutual interference between light and atoms. As shown in FIG. 10, the CPT phenomenon is a three-level system consisting of two ground levels (<1| and <2|) and one excitation level (<3|) that are in the forbidden band with each other. This is an observed resonance phenomenon. When the first excitation light ExL1 corresponding to the energy difference between <3| and <1| is introduced into the gas cell 105 exhibiting this three-level system, an absorption/emission phenomenon associated with stimulated absorption and stimulated emission is observed. Similarly, when the second excitation light ExL2 corresponding to the energy difference between <3| and <2| is introduced into the gas cell 105, an absorption/emission phenomenon associated with stimulated absorption and stimulated emission is observed. Here, when the first excitation light ExL1 and the second excitation light ExL2 are simultaneously introduced into the gas cell 105, the stimulated absorption and the stimulated emission between the respective energy levels cancel each other out, and the interaction with the exciting light does not occur. Dark resonance is observed. This is called the CPT phenomenon or CPT resonance.

Therefore, the CPT phenomenon occurs when two of the plurality of frequencies input to the gas cell 105 having the energy level as shown in FIG. 10 match the first excitation light ExL1 and the second excitation light ExL2. From this, by appropriately selecting the output frequency ν ₀ of the light emitting element 105 in the steady state, it is possible to control the occurrence of the CPT phenomenon by using the output frequency ν _mod of the microwave oscillator 103 which is an external input. Recognize.

The manifestation of the CPT phenomenon maximizes the amount of light that passes through the gas cell 105 and maximizes the output of the light receiving element 106. Further, the temperature of the gas component enclosed in the gas cell 105 is controlled by the temperature raising means 107 such as a heater to a high temperature so that the gas component is kept in a gas state, and the holding means 108 holds the gas component at a fixed position. An example of the holding means 108 is shown in FIG. The main frame 1081 holds the first tether 1082a and the second tether 1082b, and the first and second tethers 1082a and 1082b fix the gas cell 105, the light emitting element 104, and the light receiving element 106 in place.

The holding unit 108 stably holds the arrangement in which the laser light passes through the gas cell 105 through the optical path OP from the light emitting portion of the light emitting element 104 toward the light receiving portion of the light receiving element 106. Then, the output frequency of the microwave oscillator 103 is feedback-controlled so that the output of the light receiving element 105 is always captured by using the discriminator 109 and the loop filter 110. That is, stabilization is achieved by the energy level of the atoms in the gas cell 105 so that the high frequency modulation signal that is the output of the microwave oscillator 103 has a desired output frequency. As described above, the functional means for capturing the CPT resonance can be configured by one or more semiconductor elements miniaturized by the semiconductor manufacturing process. It is also possible to package all functions and configure one semiconductor element. The quantum optical unit and the CPT resonance capturing function described above are housed in a decompressed closed container 111.

The quantum optical unit of the quantum optical device 100 is a device that can obtain a standard frequency signal on the assumption that the gas cell 105 is shielded by a magnetic shield or the like and that no acceleration motion is applied to the entire device. However, when magnetism or inertial motion is applied, the energy level also reacts sensitively, and the output frequency fluctuates accordingly. Therefore, as in the quantum optical device 100 ′ shown in FIG. 12, it is possible to use it as an atomic compass by extracting the output signal S on which external magnetism is applied. Further, as in the quantum optical device 100″ shown in FIG. 13, the comparator 113 compares the standard frequency signal to which the acceleration motion is applied with the reference clock from the reference clock source 112, and extracts the output signal S of the difference wavelength. It can be used as an atomic gyro.

The gas cell 105 in the quantum optics unit needs to be temperature-controlled at about 60 to 90° C. in order to hold the encapsulated alkali metal element in a gaseous state. This is because in terms of molecular kinetic theory, the momentum of atoms is increased and the number of atoms that mutually interfere with light is increased. Therefore, the heating means 107 for heating the gas cell 105 must be connected to a wiring for supplying a heater current or the like. Further, not only the light-emitting element 104 and the light-receiving element 106, but also the semiconductor element used for realizing the CPT resonance capturing function need a wiring for supplying a power supply and a control signal and extracting a detection signal. .. However, the quantum optical unit having a compact structure requires a three-dimensional wiring structure in order to mount the gas cell and various semiconductor elements in a stacked manner.

Therefore, there is a method of connecting light sources and heaters in different layers by wire-shaped three-dimensional wiring (for example, refer to Patent Document 1). Further, a method has also been proposed in which wiring is formed in a crosslinked structure that supports the mount structure and wiring is performed to a light source or a heater (see, for example, Patent Document 2).

JP, 2017-183869, A JP, 2018-058162, A

However, the wiring structure adopted in the quantum optical device described in Patent Document 1 or Patent Document 2 is not sufficiently compatible with the quantum optical device using a small gas cell produced by a wafer process. As described above, in order to realize the CPT resonance capturing function, a high frequency circuit including a microwave oscillator is also indispensable, so that high frequency noise generated by flowing a high frequency signal does not adversely affect the operation of other semiconductor elements. Must be done.

For example, 87Rb, 85Rb, and Cs are mentioned as alkali metal atoms generally used for atomic clocks, etc., and their CPT resonance frequencies are 3.417 GHz, 1.518 GHz, and 4.596 GHz, respectively. Therefore, most of the signals in the quantum optical devices 100, 100', 100" shown in FIGS. 9, 12, and 13 need to be precisely controlled in the high frequency band.

If such high-frequency signal wiring, power supply wiring, and low-frequency control signal wiring are mixed, high-frequency noise will be superimposed on the power supply and low-frequency control signal, causing system malfunction or failure. Therefore, the frequency accuracy is lowered. Therefore, it is difficult to realize a quantum optical device that operates stably unless appropriate measures are taken against high-frequency noise generated by input and output of high-frequency signals.

An object of the present invention is to provide a quantum optical device capable of suppressing the influence of high frequency noise generated by a high frequency signal.

In order to solve the problems, the quantum optical device according to the present configuration, a light emitting element that emits excitation light of a plurality of frequencies in the absorption wavelength band of the alkali metal element, and the excitation light from the light emitting element through a transparent window portion. A small gas filling container, in which the alkali metal element and the buffer gas are filled in a fine inner space created by the wafer process, which is placed at the receiving position, and the gas component filled in the gas filling container is in a gas state. A temperature raising means for heating the gas filling container so as to hold it, a light receiving element arranged at a position for receiving the light passing through the gas filling container, and detecting the light intensity of the received light, and the light receiving element for detecting the light intensity. One or more CPT resonance trapping functions that match the frequency difference of the excitation light output from the light emitting device with the frequency difference between the base ranks of the alkali metal elements so as to generate the CPT resonance that maximizes the light intensity. A semiconductor element, a plurality of structure holding tethers, which are fixed to a frame having a necessary and sufficient load resistance, hold a holding target including the gas filling container, the light emitting element, the light receiving element, and the semiconductor element at required positions, respectively, and wiring. A wiring tether, which is fixed to the frame at a position capable of holding the required holding object, and has a wiring formed on at least one surface side of the dielectric substrate.

Further, in the above configuration, the wiring tether is at least a DC signal wiring tether in which a DC signal wiring used for transmission of a DC power source or a DC signal is formed, and a high-frequency signal used for transmission of a high-frequency signal that may cause high-frequency noise. A high-frequency signal wiring tether formed with wiring may be included.

Further, in the above configuration, the wiring tether may further include a low-frequency signal wiring tether in which a low-frequency signal wiring used for transmitting a low-frequency signal that does not cause high-frequency noise is formed.

Further, in the above configuration, the width of the tether for high-frequency signal wiring may be set narrower than the width of other wiring tethers.

Further, in the above configuration, the DC signal wiring tether may be provided with a ground wiring electrically grounded on a surface facing the DC signal wiring.

Further, in the above configuration, the DC signal wiring tether may include ground wirings electrically grounded on both sides of the DC signal wiring.

According to the quantum optical device according to the present invention, since the wiring tether having the wiring formed is provided separately from the structure holding tether that holds the holding object at each required position, the power supply and the input/output of the signal are performed in the wiring tether unit. It can be done independently. Therefore, it is possible to effectively separate the influence of high-frequency noise by physically separating the high-frequency signal that is the source of high-frequency noise from other direct current and low-frequency signals.

It is a schematic block diagram of the quantum optical device which concerns on embodiment. The gas cell of the 1st modification is shown, (A) is an external perspective view, (B) is a sectional view taken along the line IIB-IIB of FIG. 2(A), and (C) is IIC-IIC of FIG. 2(A). It is an arrow sectional view of a line. The gas cell of the 2nd modification is shown, (A) is an external perspective view, (B) is a sectional view taken along the line IIIB-IIIB of FIG. 3(A), and (C) is IIIC-IIIC of FIG. 3(A). It is an arrow sectional view of a line. The gas cell of the 3rd modification is shown, (A) is an external perspective view, (B) is a cross-sectional view taken along the line IVB-IVB of FIG. 4(A), and (C) is IVC-IVC of FIG. 4(A). It is the arrow sectional drawing of a line. FIG. 7A is a schematic cross-sectional view showing an enlarged gas-filled space in the gas cell of the first modified example. (B) is a schematic cross-sectional view showing an enlarged gas-filled space in the gas cell of the second modified example. (C) is a schematic cross-sectional view showing an enlarged gas-filled space in the gas cell of the third modified example. (A) is a schematic cross-sectional view of the quantum optical part of the first configuration example. FIG. 6B is an enlarged end view of the VIB-VIB arrow in FIG. 6A. (A) is a schematic cross-sectional view of a quantum optical part of a second configuration example. FIG. 7B is an enlarged end view of the VIIB-VIIB arrow in FIG. 7A. (A) is a schematic cross-sectional view of a quantum optics part of a third configuration example. FIG. 8B is an enlarged end view of the line VIIIB-VIIIB in FIG. 8A. It is a functional block diagram which shows the conventional quantum optical device applicable to an atomic clock. It is a principle explanatory view of a CPT phenomenon. It is a schematic block diagram of the conventional quantum optical device. It is a functional block diagram which shows the conventional quantum optical device applicable to an atomic compass. It is a functional block diagram which shows the conventional quantum optical device applicable to an atomic gyro.

Next, embodiments of the quantum optical device will be described in detail with reference to the accompanying drawings.

The quantum optical device 1 shown in FIG. 1 has a structure in which a quantum optical unit 3 is provided in a depressurized closed container 2. The holding means 10 of the quantum optics unit 3 holds a gas cell 20 which is a gas filling container in which an alkali metal element is sealed, at a predetermined position. Around the gas cell 20, there is arranged a temperature raising means 30 which can be constituted by a heater or the like for holding the enclosed gas in a gaseous state (for example, holding a high temperature of 60 to 90° C.).

The holding means 10 is provided with a plurality of stages (for example, five stages) of tethers 12 fixed so as to extend inward from the proper position of the main frame 11 having necessary and sufficient load resistance. Each tether 12 includes a gas cell 20 having a temperature raising means 30, a light emitting element 41, a light receiving element 42, a semiconductor element 50 used for realizing a CPT capturing function (hereinafter, these are referred to as holding objects of the tether 12), They are held in a desired position in a stacked manner while being separated from each other. That is, since the holding objects held by the tethers 12 are insulated from each other by arranging the tethers 12 appropriately apart from each other, the temperature can be controlled in the temperature zone according to the characteristics. For example, the light emitting element 41, the light receiving element 42, and the semiconductor element 50 can be temperature-controlled by a unique temperature control system (for example, a low temperature of about 40 to 60° C.) different from the temperature management of the gas cell 20. ..

The gas cell 20 has a two-step holding structure in which the tether 12 holds the first face plate 23a side and the second face plate 23b side, respectively, to improve load bearing capacity, but only one stage holding structure (see, for example, FIG. 1). In the above, only a structure of supporting from below or a structure of hanging from above) may be used. A light emitting element 41 held by the tether 12 is arranged on the first surface 23a side of the gas cell 20, and a light receiving element 42 held by the tether 12 is arranged on the second surface 23b side of the gas cell 20 to emit light. An optical path OP through which the irradiation light from the element 41 passes through the gas cell 20 and reaches the light receiving portion of the light receiving element 42 is formed.

The gas cell 20 has a structure in which a gas-filled space 22 penetrating two surfaces of a base body 21 (an upper surface and a lower surface in FIG. 1) is provided and sealed with a translucent first face plate 23a and a second face plate 23b. Is. For example, by disposing the first face plate 23a of the gas cell 20 so as to face the light emitting element 41, this is an incident face, and by disposing the second face plate 23b so as to face the light receiving device 42, this is an emitting face. To do. The temperature raising means 30 heats the gas filled in the gas filled space 22 of the gas cell 20 in order to keep the gas in a gaseous state. The temperature rising means 30 emits light from the entrance window of the first face plate 23a and the second face plate 23b. Care must be taken that the window is not blocked by the temperature raising means 30. Alternatively, a heater made of a transparent conductive film (ITO film) transparent to the wavelength of the laser light may be arranged so as not to obstruct the optical path OP.

For the base body 21 of the gas cell 20 described above, an existing glass tube can be cut into a required length and the inner space of the single glass tube can be used as the gas-filled space 22. There is a limit to miniaturization of the gas cell 20. If the base body 21 is created by finely processing a base material such as silicon by a wafer process, the main body of the gas cell 20 can be formed in a small size of several millimeters or less. Being able to use the wafer process means that small gas cells 20 such as semiconductor chips can be mass-produced. In addition, if semiconductor production technology can be utilized, pattern transfer using an exposure apparatus will open the way to further miniaturize the gas cell 20. In addition, if the base body 20 of the gas cell 20 is made of a smooth wafer, a technique called wafer level packaging can be used to assemble at the wafer level, and dicing at the end to separate the individual pieces. Is.

Further, the small gas cell 20 is not limited to the structure described above. For example, the gas cell 20A of the first modified example shown in FIG. 2 has a pair of base bodies 24, 24 each having a required shape (for example, a substantially quadrangle) and a flat plate, and the inner cavity opening surface of the light transmissive body 25. Is sealed and a gas-filled space 22 is provided. The light transmissive body 25 has a substantially rectangular frame shape formed of a translucent material such as glass, and has a pair of opposing translucent wall portions 25a and 25b and a pair of connecting portions that connect the end portions of these translucent wall portions 25a and 25b. It is provided with walls 25c and 25d. In the gas cell 20A shown in FIG. 2, the light transmitting wall portion 25a is on the emitting side and the light transmitting wall portion 25b is on the incident side. Therefore, the outer surface and the inner surface of the light transmitting wall portions 25a and 25b are planes orthogonal to the optical path OP. You need to leave it. On the other hand, such accuracy is not required for the outer surface and the inner surface of the connecting wall portions 25c and 25d, and therefore the outer surface and the inner surface do not have to be parallel (for example, refer to FIG. 2C). If all the four side walls of the light transmitting body 25 function as a light transmitting wall portion, any of the four side walls can be used as an entrance surface or an exit surface, and therefore the orientation when the gas cell 20A is arranged is not limited. It has a high degree of freedom.

The gas cell 20B of the second modified example shown in FIG. 3 includes a pair of flat base bodies 24 having a required shape (for example, a substantially quadrangular shape) and a translucent face plate 26. This is a structure in which the gas filled space 22 is provided by sealing the opening surface of the inner space. As described above, the base body 24 made of a structural material such as silicon by a wafer process is used on only one side, and the light transmission body 25 and the face plate 26 are assembled to the base body 24, so that the gas cell 20B as a gas filling container is also provided. Can be produced.

The gas cell 20C of the third modified example shown in FIG. 4 has a structure in which the gas-filled cavity 22 is provided by sealing the inner cavity opening surface of the base body 27 with translucent face plates 26, 26. If the inner cavity of the base body 27 is formed by a semiconductor processing process such as etching, the inner cavity edge 27a may not be uniform (see FIG. 4C). However, unless the inner edge portion 27a of the base body 27 interferes with the optical path OP from the entrance window portion of the one face plate 26 to the exit window portion of the other face plate 26, the gas filled void portion 22 having a slightly distorted shape is formed. It doesn't matter.

FIG. 5(A) shows a gas cell 20A' in which the volume of the gas-filled void 22 is increased as compared with the gas cell 20A of the first modified example. In the gas cell 20A', the recess 24a is provided on the inner surface side of each of the base bodies 24', 24' to form the gas-filled void 22' with an increased gas-filled volume. FIG. 5(B) shows a gas cell 20B' in which the volume of the gas-filled void 22 is increased as compared with the gas cell 20B of the second modified example. In the gas cell 20B', the recess 24a is provided on the inner surface side of the base body 24', and the recess 26a is also provided on the inner surface side of the face plate 26', thereby forming a gas filled empty portion 22' with an increased gas filled volume. did. FIG. 5C shows a gas cell 20C' in which the volume of the gas-filled void 22 is increased as compared with the gas cell 20C of the third modified example. In the gas cell 20C', a recess 26a is provided on the inner surface side of each face plate 26', 26' to form a gas filled space 22' with an increased gas filled volume.

The various gas cells 20 described above require a wiring structure serving as a flow path for supplying a heater current for heating by the temperature raising means 30. A wiring structure for supplying power and inputting/outputting signals is also required for the light emitting element 41 and the light receiving element 42. In order to realize the CPT resonance capturing function, it is necessary to input/output a high frequency signal to/from a semiconductor element 50 such as a high frequency circuit including a microwave oscillator. In the quantum optical unit 3A of the first configuration example shown in FIG. 6, the tether 12 is selectively used as a plurality of different structures (structure holding tether 121, direct-current signal tether 122, high-frequency signal tether 123).

The structure holding tether 121 mainly holds a load to be held by the gas cell 20, the light emitting element 41, the light receiving element 42, the semiconductor element 50, and the like, and is formed from a plate-like body 121a having high heat resistance and strength such as polyimide. Can be configured. The shape of the structure holding tether 121 may not be a plate shape, but may be a square bar shape or the like that can further increase the strength. Further, since the gas cell 20, the light emitting element 41, the light receiving element 42, and the semiconductor element 50 which are holding targets all require wiring, the wiring holding tether is also used together with the structure holding tether 121. The wiring tether supports a part of the load to be held and connects the power supply and signal transmission paths to the held object. In this embodiment, two types of tethers for direct current signals 122 and tethers for high frequency signals 123 are prepared as wiring tethers, and only one may be used or both may be used depending on the signal characteristics required by the holding target. May be used.

The DC signal wiring tether 122 is formed by forming a DC signal wiring 122b used for transmitting a DC power source or a DC signal on one surface side (the upper surface side in FIG. 6B) of the dielectric substrate 122a. The high-frequency signal wiring tether 123 has a high-frequency signal wiring 123b used for transmitting a high-frequency signal that may cause high-frequency noise formed on one surface side (upper surface side in FIG. 6B) of the dielectric substrate 123a. is there. A low-frequency signal wiring tether may be provided separately by forming a low-frequency signal wiring used for transmitting low-frequency signals that does not cause high-frequency noise on one side of the dielectric substrate, but for DC signals The wiring tether 122 can be shared as a wiring tether for low frequency signals. These wiring tethers are fixed to the main frame 11 at a position where any of the structure holding tethers 121 can hold a holding target, and have a function of holding the load of the holding target, and also serve as an input/output line for a power supply or a signal. With the function of.

As described above, by spatially separating the DC signal wiring tether 122 and the high frequency signal wiring tether 123, the high frequency noise generated by the high frequency signal flowing through the high frequency signal wiring 123b of the high frequency signal wiring tether 123 is It is possible to suppress electromagnetic coupling with the DC signal wiring 122b of the signal wiring tether 122. In this configuration example, the DC signal wiring tether 122 and the high frequency signal wiring tether 123 are provided so as to extend from the same surface of the main frame 11, and the wiring shape points to the tethers 122 and 123 are aggregated. I was made to do it. However, if it is not necessary to aggregate the wiring formation locations for each tether 12, the DC signal wiring tether 122 and the high frequency signal wiring tether 123 may be extended from different surfaces of the main frame 11 so that both tethers are The separation distance may be increased to further enhance the noise suppressing effect.

In addition, the width of the high-frequency signal wiring tether 123 is set to be narrower than the width of the DC signal wiring tether 122, and also set to be narrower than the width of the high-frequency signal wiring 123b and the DC signal wiring 122b. Designing the high-frequency signal wiring 123b relatively thinly with respect to the high-frequency signal wiring 123b is also effective in suppressing electromagnetic coupling.

Further, as an effective method of suppressing high-frequency noise from being superimposed on the power supply line, there is a method of shunting the power supply line to an electrical ground by using a capacitor. Therefore, the DC signal wiring tether 122' in the quantum optical unit 3B of the second configuration example shown in FIG. 7 is electrically grounded on the surface facing the DC signal wiring 122b with the dielectric substrate 122a interposed therebetween. 122c. With such a relatively simple structure, it is possible to effectively suppress the mixing of high-frequency noise into the DC signal wiring 122b.

However, in the DC signal wiring tether 122' in the quantum optical unit 3B of the second configuration example, it is necessary to provide printed wiring on both surfaces of the dielectric substrate 122a, which leads to an increase in cost. Therefore, the direct-current signal wiring 122″ in the quantum optical unit 3C of the third configuration example shown in FIG. 8 is electrically grounded to the first ground wiring 122d1 on both sides of the direct-current signal wiring 122b through appropriate gaps. With such a wiring structure, since it can be produced by simply providing a printed wiring on one surface of the dielectric substrate 122a, it is possible to reduce the cost and reduce the high frequency to the DC signal wiring 122b. It is possible to effectively suppress noise mixing.

The quantum optical device according to the present invention has been described above based on the embodiment. However, the present invention is not limited to this embodiment, and can be realized without changing the configuration described in the claims. Includes the quantum optical device as a scope of right.

DESCRIPTION OF SYMBOLS 1 quantum optical device 2 airtight container 10 holding means 11 main frame 12 tether 121 structure holding tether 122 DC signal wiring tether 123 high frequency signal wiring tether 20 gas cell 33 temperature raising means 41 light emitting element 42 light receiving element 60 temperature control means

Claims (6)

A light emitting element that emits excitation light of a plurality of frequencies in the absorption wavelength band of the alkali metal element,
A small gas-filled container in which the excitation light from the light-emitting element is arranged at a position to be received from a transparent window portion, an alkali metal element and a buffer gas are sealed in a fine inner space created by a wafer process,
A temperature raising means for heating the gas filling container so that the gas component sealed in the gas filling container maintains a gas state,
A light receiving element that is arranged at a position for receiving light that has passed through the gas filled container, and that detects the light intensity of the received light,
CPT resonance trapping function for matching the frequency difference of the excitation light output from the light emitting element with the frequency difference between the base ranks of the alkali metal elements so as to generate the CPT resonance that maximizes the light intensity detected by the light receiving element. One or more semiconductor elements that realize
A plurality of structure holding tethers, each of which is fixed to a frame having necessary and sufficient load resistance, holds the gas filling container, the light emitting element, the light receiving element, and the holding object including the semiconductor element at a required position, respectively.
A wiring tether that is fixed to the frame at a position capable of holding the holding object that requires wiring, and has a wiring formed on at least one side of the dielectric substrate,
A quantum optical device comprising: The wiring tether is at least
A DC signal wiring tether formed with a DC signal wiring used for transmission of a DC power source or a DC signal,
A high-frequency signal wiring tether formed with high-frequency signal wiring used for transmission of high-frequency signals that may cause high-frequency noise,
The quantum optical device according to claim 1, further comprising: The wiring tether is further
A low-frequency signal wiring tether formed with low-frequency signal wiring used for low-frequency signal transmission that does not cause high-frequency noise.
The quantum optical device according to claim 2, further comprising: The quantum optical device according to claim 2 or 3, wherein a width of the tether for high-frequency signal wiring is set to be narrower than a width of another wiring tether. The quantum optical device according to any one of claims 2 to 4, wherein the DC signal wiring tether includes a ground wiring electrically grounded on a surface facing the DC signal wiring. .. The quantum optical device according to any one of claims 2 to 4, wherein the DC signal wiring tether includes ground wirings electrically grounded on both sides of the DC signal wiring.

Images