JP2020123700A - Measurement method, measurement device, imprint device, and method of manufacturing article - Google Patents

Abstract

To provide a measurement method advantageous in measuring deformation of a pattern formed on a substrate.SOLUTION: The present invention relates to a measurement method for measuring deformation of a pattern formed by bringing a mold into contact with an imprint material on a substrate, and influenced by the substrate and deformation influenced by a transfer process, a periodic pattern being formed on the surface, coming into contact with the imprint material, of the mold. The measurement method has: a first process of bringing the mold into contact with the imprint material on the substrate to transfer the pattern to the imprint material; a second process of measuring differences between the transfer pattern transferred to the imprint material in the first process and a reference pattern obtained while the influence of the substrate or transfer process is controlled; and a third process of acquiring a distribution of deformation of the transfer pattern based upon the differences measured in the second process.SELECTED DRAWING: Figure 4

Description

The present invention relates to a measuring method, a measuring device, an imprinting device, and an article manufacturing method.

The imprint technique is a technique that enables transfer of a nanoscale fine pattern, and has been attracting attention as one of lithography techniques for mass production of devices such as semiconductor devices and magnetic storage media. In an imprint apparatus using the imprint technology, a mold (mold) having a fine pattern is brought into contact with an imprint material on a substrate (silicon wafer or glass substrate), and the imprint material is imprinted between the mold and the substrate. Fill with printing material. Then, in a state where the mold and the imprint material on the substrate are in contact with each other, the imprint material is cured by light irradiation or temperature change, and then the mold is separated to form a pattern on the substrate.

Also in the imprint apparatus, for example, similar to the exposure apparatus, a new pattern is overlaid on a pattern or structure already formed on the substrate. Therefore, the imprint apparatus is required to improve the overlay accuracy in order to improve the performance and yield of various devices manufactured using the imprint apparatus.

Therefore, a technique for improving the overlay accuracy in the imprint apparatus has been proposed (see Patent Documents 1 and 2). Patent Document 1 proposes a technique for improving the overlay accuracy by obtaining a deformation amount when a substrate having a warp is attracted to a substrate chuck and correcting the position and shape of the substrate based on the deformation amount. ing. Further, in Patent Document 2, by utilizing the fact that the substrate is partially thermally expanded by irradiating the substrate with light having an intensity distribution, the position of the pattern on the substrate is locally adjusted and the overlay accuracy is improved. Have been proposed.

JP, 2017-50428, A Patent No. 5932286

At present, the shape difference between the pattern newly formed on the substrate and the pattern already formed on the substrate can be obtained by obtaining the relative position of the mark for overlay inspection formed together with each pattern. There is. However, in an actual device, the marks can be formed only in a region other than the pattern region of the device such as a scribe line, and thus the number and positions of the marks are limited. Therefore, with respect to the shot shape, only low-order components can be obtained, and local distortion and high-order components cannot be obtained.

The present invention has been made in view of the above problems of the conventional art, and an exemplary object of the present invention is to provide a measurement method advantageous for measuring the deformation of a pattern formed on a substrate.

In order to achieve the above-mentioned object, a measuring method according to one aspect of the present invention provides a pattern formed by bringing a mold into contact with an imprint material on a substrate, the deformation of the pattern being influenced by the substrate, or the influence of a transfer process. A measuring method for measuring the received deformation, wherein a periodic pattern is formed on a surface of the mold, which is in contact with the imprint material, wherein the measuring method is performed by molding the mold on the imprint material on the substrate. A first step of transferring the pattern to the imprint material by bringing them into contact with each other, a transfer pattern transferred to the imprint material in the first step, and a reference pattern in which the influence of the substrate or the transfer step is controlled. It is characterized by including a second step of measuring a difference and a third step of acquiring a distribution of deformation of the transfer pattern based on the difference measured in the second step.

Further objects and other aspects of the present invention will be made clear by the embodiments described below with reference to the accompanying drawings.

According to the present invention, for example, it is possible to provide a measuring method which is advantageous for measuring the deformation of the pattern formed on the substrate.

It is a schematic diagram showing the composition of the imprint device as one side of the present invention. It is a figure for explaining imprint processing. It is a schematic sectional drawing which shows the state which made the imprint material on a board|substrate and the mold contact. It is a figure which shows an example of a structure of the mold for measurement. It is a figure which shows the state in which the line pattern of the measurement mold shown in FIG. 4 was transferred to the imprint material on the substrate. It is a figure which shows the structure of the measuring device which measures a transfer pattern. 7 is a flowchart for explaining a process of measuring and correcting local deformation of the mold. It is a figure which shows an example of a structure of the mold for measurement. It is a figure which shows the state in which the imprint material on a target substrate and the measurement mold are in contact. It is a figure which shows the structure of the measuring device which measures the pattern of the mold for measurement. It is a figure for demonstrating the manufacturing method of an article.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. The following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiment, not all of the plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined. Furthermore, in the accompanying drawings, the same or similar components are designated by the same reference numerals, and a duplicate description will be omitted.

FIG. 1 is a schematic diagram showing a configuration of an imprint apparatus 100 according to one aspect of the present invention. The imprint apparatus 100 is a lithographic apparatus that is used in a lithographic process that is a manufacturing process of a semiconductor device or a liquid crystal display element and forms a pattern on a substrate. In the present embodiment, the imprint apparatus 100 brings the imprint material supplied onto the substrate into contact with the mold (mold), and imparts curing energy to the imprint material, thereby transferring the uneven pattern of the mold. Forming a pattern of the cured product.

As the imprint material, a curable composition (also referred to as an uncured resin) that is cured by application of curing energy is used. An electromagnetic wave or the like is used as the curing energy. As the electromagnetic wave, for example, light such as infrared light, visible light, or ultraviolet light whose wavelength is selected from the range of 10 nm or more and 1 mm or less is used.

The curable composition is a composition that is cured by irradiation with light. The photocurable composition that is cured by irradiation with light contains at least a polymerizable compound and a photopolymerization initiator, and may contain a non-polymerizable compound or a solvent, if necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal release agent, a surfactant, an antioxidant and a polymer component.

The imprint material may be applied in a film form on the substrate by a spin coater (spin coating method) or a slit coater (slit coating method). Further, the imprint material may be applied onto the substrate by the liquid ejecting head in the form of liquid drops, or in the form of islands or films formed by connecting a plurality of liquid drops. The viscosity of the imprint material (viscosity at 25° C.) is, for example, 1 mPa·s or more and 100 mPa·s or less.

The substrate is made of glass, ceramics, metal, semiconductor, resin or the like, and a member made of a material different from that of the substrate may be formed on the surface of the substrate, if necessary. Specifically, the substrate includes a silicon wafer, a compound semiconductor wafer, quartz glass and the like.

As shown in FIG. 1, the imprint apparatus 100 includes a window plate 101, a mold holding mechanism 102, a substrate holding mechanism 107, a curing mechanism 108, a stage 109, back pressure adjusting mechanisms 110 and 111, and a supply unit. It has 112 and the control part 113.

The mold 103 and the substrate 106 are arranged so as to face each other with the imprint material 105 interposed therebetween. The mold 103 is held (fixed) by the mold holding mechanism 102, and the substrate 106 is held (fixed) by the substrate holding mechanism 107.

On the mold 103, a pattern (concave pattern) for transferring to the imprint material 105 on the substrate is formed. The material of the mold 103 can be widely selected and used from metals, Si, various resins, various ceramics and the like. For example, when a photocurable imprint material is used as the imprint material 105, a light transmissive material such as quartz, sapphire, or transparent resin is used as the material of the mold 103. In addition, in the surface facing the substrate 106, that is, in the surface contacting the imprint material on the substrate (hereinafter, referred to as “front surface”), the pattern area 104 in which the pattern is formed is different from the peripheral portion (base portion). It is convex. Therefore, the surface tension can prevent the uncured imprint material 105 on the substrate from protruding from the pattern region 104.

The imprint material 105 has fluidity when filled in the mold 103, and is required to be solid so as to retain its shape after curing (after imprinting). As described above, the imprint material 105 includes a thermosetting imprint material and a heat-possible imprint material in addition to the photocurable imprint material. For example, the photo-curable imprint material does not require temperature change during the curing process, and suppresses changes in the position and shape of the pattern transferred onto the substrate due to thermal expansion and contraction of each member including the apparatus body. And easy to control with high accuracy. Therefore, the photocurable imprint material is preferably used in the manufacture of semiconductor devices and related fields.

As described above, the imprint material 105 may be carried into the imprint apparatus 100 in a state of being previously supplied (coated) on the substrate by the spin coating method, the slit coating method, the screen printing method, or the like. However, in this embodiment, the supply unit 112 is provided in the imprint apparatus. The supply unit 112 includes a pneumatic type, a mechanical type, an ink jet type dispenser, and supplies the imprint material 105 to a predetermined position on the substrate.

The supply unit 112 can locally adjust the amount (supply amount) of the imprint material 105 to be supplied onto the substrate according to the density of the pattern of the mold 103 by including the dispenser of the above-described system. In addition, the supply unit 112 includes the dispenser of the above-described method, so that the process from the process of supplying the imprint material 105 on the substrate to the process of contacting the mold 103 with the imprint material 105 on the substrate can be performed in a short time. To enable. As a result, it is possible to select a low-viscosity material with high volatility as the imprint material 105, and it is possible to shorten the filling time of the imprint material 105 into the mold 103. Therefore, the supply unit 112 is generally provided in the imprint apparatus 100 used in the manufacture of semiconductor devices that require high precision and high throughput and the related fields.

The material of the substrate 106 is selected according to the application (usage method) after processing. For example, for use as a semiconductor device, a silicon wafer is selected as the substrate 106. For use as an optical element, quartz glass, optical glass, transparent resin, or the like is selected as the substrate 106. For use as a light emitting element, GaN, SiC or the like is selected as the substrate 106.

The stage 109 is a stage that holds and moves the substrate 106 via the substrate holding mechanism 107. The stage 109 adjusts the relative position between the substrate 106 and the mold 103 and the relative position between the substrate 106 and the supply unit 112. The back pressure adjusting mechanism 111 adjusts (controls) the back pressure of the substrate 106 to operate the substrate holding mechanism 107 as a so-called vacuum chuck.

The control unit 113 is configured by a computer including a CPU, a memory, and the like, and comprehensively controls each unit of the imprint apparatus 100 according to a program stored in the storage unit to operate the imprint apparatus 100. The control unit 113 controls the imprint process and the process related to the imprint process.

The imprint process in the imprint apparatus 100 will be described with reference to FIGS. 2A, 2B, and 2C. As shown in FIG. 2A, the imprint material 105 is supplied to the substrate 106 from the supply unit 112 immediately below the supply unit 112. The substrate 106 is positioned so that the portion (shot area) to which the imprint material 105 is supplied faces the pattern area 104 of the mold 103, and as shown in FIG. 103 is pressed onto the substrate 106. In a state where the imprint material 105 on the substrate and the mold 103 are in contact with each other, the relative positional relationship in the in-plane direction (XY direction) between the pattern region 104 of the mold 103 and the shot region of the substrate 106 is precisely adjusted. ..

When the imprint material 105 on the substrate and the mold 103 are brought into contact (contact with liquid), the mold 103 is deformed into a convex shape with respect to the substrate 106, and the pattern region 104 is gradually brought into contact with the imprint material 105. Good. This is because when the entire surface of the pattern region 104 of the mold 103 is brought into contact with the imprint material 105 on the substrate at the same time, the gas (atmosphere gas) between the mold 103 and the substrate 106 is partially confined and not filled. This is a defect. It should be noted that the same effect can be obtained by gradually contacting the imprint material 105 on the substrate from one side of the pattern region 104 on the left, right, up, and down, instead of deforming the mold 103 into a convex shape with respect to the substrate 106. You can

By contacting the imprint material 105 on the substrate with the mold 103, the imprint material 105 is filled between the mold 103 and the substrate 106. At this time, as described above, by deforming the entire shape of the mold 103 in the vertical direction (Z direction), the filling property of the imprint material 105 can be improved. In this embodiment, the window plate 101 closes the back surfaces of the mold 103 and the mold holding mechanism 102 to form an airtight space, and the pressure in the airtight space is adjusted (controlled) by the back pressure adjusting mechanism 110. For example, by increasing the pressure in the airtight space, the mold 103 is deformed into a substantially spherical shape that is convex with respect to the substrate 106, so that contact between the mold 103 and the imprint material 105 on the substrate is from the center of the pattern region 104. Proceed outward. As a result, the filling of the imprint material 105 proceeds while pushing out the gas between the mold 103 and the substrate 106, so that it is possible to perform the filling at a high speed and with less gas entrapment (bubble trapping).

When the filling of the imprint material 105 progresses sufficiently, the curing mechanism 108 cures the imprint material 105 while the imprint material 105 on the substrate and the mold 103 are in contact with each other. As the curing mechanism 108, a mechanism capable of curing the imprint material 105 is adopted according to the material of the imprint material 105. For example, if the imprint material 105 is a photo-curable imprint material, the curing mechanism 108 is a light irradiation mechanism, generally, light for irradiating light having a wavelength in the ultraviolet region (UV light). The irradiation mechanism is adopted. If the imprint material 105 is a thermosetting imprint material, a heating mechanism is used as the curing mechanism 108, and if the imprint material 105 is a thermoplastic imprint material, a cooling mechanism is used as the curing mechanism 108. Adopted. However, when the imprint material 105 is a thermoplastic imprint material, as the curing mechanism 108, a heating mechanism for softening the imprint material 105 at the time of filling may be simultaneously adopted in addition to the cooling mechanism. As the cooling mechanism, an active cooling mechanism such as a chiller or a Peltier element is preferable from the viewpoint of shortening the time of the imprint process, but a passive cooling mechanism such as natural heat dissipation may be used.

When the imprint material 105 on the substrate is cured, the mold 103 is separated from the imprint material 105 as shown in FIG. As a result, the pattern of the imprint material 105 is formed on the substrate. Note that an adhesive layer or a peeling layer may be provided so that the pattern of the imprint material 105 remains on the substrate when the mold 103 is separated from the cured imprint material 105 on the substrate. The adhesive layer is a layer provided at the interface between the substrate 106 and the imprint material 105 and made of a substance that enhances the adhesiveness with the imprint material 105. The peeling layer is a layer provided at the interface between the mold 103 and the imprint material 105 and made of a substance that promotes peeling of the mold 103 from the imprint material 105. Each of the adhesive layer and the peeling layer may be provided by applying the substance described above to the substrate 106 and the mold 103, or the imprint material 105 may include a component corresponding to the substance described above.

It should be noted that each unit of the imprint apparatus 100 only needs to satisfy the functions described above, and is not limited to the form shown in FIG. For example, instead of the stage 109 moving the substrate 106, the mold 103 may be moved, or both the substrate 106 and the mold 103 may be moved. Further, the curing mechanism 108 may be provided on the substrate 106 side instead of the mold 103 side. For example, consider a case where a photo-curable imprint material is used as the imprint material 105, an opaque material such as silicon is used for the mold 103, and a transparent material such as quartz is used as the substrate 106. In this case, the curing mechanism 108 must be provided on the substrate 106 side.

FIG. 3 is a schematic cross-sectional view showing a state in which the imprint material 105 on the substrate and the mold 103 are in contact with each other. In FIG. 3, the pattern surface direction of the mold 103 is the X (or Y) direction, and the direction perpendicular to the pattern surface of the mold 103 is the Z direction.

Referring to FIG. 3, the mold 103 before contact is flat unless a force is applied, and a pattern is formed on the flat surface (that is, the pattern region 104). As described above, in the imprint process, the mold 103 is temporarily deformed into a convex shape or a force is applied to its side surface. However, the mold 103 (pattern region 104) is normally flat after contact with the imprint material 105 on the substrate.

On the other hand, on the substrate 106, for example, a large number of patterns are formed as a base pattern in the previous step. Therefore, the substrate 106 has irregularities on its surface. When the mold 103 is brought into contact with the imprint material 105 supplied onto such a substrate, the mold 103 is locally deformed in the direction (Z direction) perpendicular to the pattern surface, following the irregularities (surface) of the substrate 106. To do. Therefore, the mold 103 is locally deformed in the X (or Y) direction due to the unevenness of the substrate 106, and the pattern region 104 is deformed (distorted).

In FIG. 3, the points that are arranged at equal intervals in the mold 103 before contact show the deformation when the mold 103 is pressed against the substrate 106 having irregularities via the imprint material 105. It can be seen that local distortion occurs in the mold 103 (pattern region 104) corresponding to (causing) the unevenness of the substrate 106. Such local distortion of the mold 103 causes a decrease in overlay accuracy, and thus a portion where the lower layer and the upper layer do not overlap with each other with a predetermined overlay accuracy occurs, causing a device defect.

It is considered that the mold 103 (pattern region 104) is locally deformed due to various factors other than the unevenness of the substrate 106. Here, various factors include, for example, the relative inclination and pressing force between the mold 103 and the substrate 106 at the time of contact, the intentional deformation of the mold 103 at the time of contact, the mold 103 in the XY directions after contact, This includes the influence of the transfer process such as driving of the substrate 106 and heat. In addition, the intentional deformation of the mold 103 at the time of contact means that the mold 103 has a convex shape in order to improve the filling property of the imprint material 105, as described above.

In the prior art, by measuring the relative positions of the mark already formed on the substrate side and the mark newly transferred (formed) on the substrate side at a plurality of points, the relative position between the mold 103 and the substrate 106 is measured. It captures the difference between different shot shapes (shape difference). However, in an actual device, it is difficult to form a large number of marks in the region where the actual element is formed, and even if the mark can be formed in the region where the actual element is formed, the pitch becomes mm order. Therefore, in the conventional technique, it is very difficult to measure the local deformation of the mold 103 after the contact. Further, because of the relative shape difference between the mold 103 and the substrate 106, it is difficult to determine (separate) which of the mold 103 and the substrate 106 is deformed.

Therefore, the present embodiment provides a technique for measuring (capturing) the local deformation of the mold 103 after the contact. FIG. 4A is a diagram showing a pattern region of a measurement mold (measurement mold) 103A for measuring local deformation of the mold 103 after contact, and FIG. 4B is a measurement region. It is a figure which expands and shows the cross section of mold 103A.

As shown in FIG. 4A, a periodic pattern is formed in the pattern area of the mold 103A. In this embodiment, the line pattern LP parallel to the Y direction is formed on the entire surface of the pattern area of the mold 103A. However, the periodic pattern may be formed in a region corresponding to the shot region on the substrate on the surface of the mold 103A that contacts the imprint material 105. The depth of each (pattern element) of the line pattern LP is set so that the transfer pattern transferred (formed) to the imprint material 105 can be measured (that is, a measurable pattern height can be obtained). It is determined from the performance of the system that measures the transfer pattern. The interval between the line patterns LP is set according to the resolution in the XY directions of the system for measuring the transfer pattern, the deformation amount (distortion amount) and the range to be grasped.

FIGS. 5A and 5B are diagrams showing a state in which the line pattern LP of the mold 103A is transferred to the imprint material 105 on the substrate, that is, a transfer pattern. 5A shows a transfer pattern transferred to a flat substrate 106, that is, a substrate 106A having no unevenness, and FIG. 5B shows a substrate 106B having a deformed surface, that is, unevenness. The transfer pattern transferred to the substrate 106B having the is shown.

As shown in FIG. 3, when the line pattern LP of the mold 103A is transferred to the uneven substrate 106B, the mold 103A is deformed according to the unevenness of the substrate 106B, and thus the transfer pattern is also considered to be deformed (distorted). Therefore, when the transfer pattern shown in FIG. 5A is compared with the transfer pattern shown in FIG. 5B, it can be seen that the position of the transfer pattern has changed. By measuring the change in the position of the transfer pattern, the local deformation of the mold 103 in the XY directions after the contact can be grasped with high accuracy.

For example, if the absolute position of the transfer pattern shown in FIGS. 5A and 5B can be measured with high accuracy, the transfer pattern is directly measured and grasped as a pattern distribution in the transfer area. .. Specifically, the substrate on which the transfer pattern is formed is placed on a stage such as an interferometer that can perform highly accurate position measurement. Then, the absolute position of the transfer pattern can be measured by using an AFM that uses a scope or a stylus having a highly accurate resolution. Further, the scope and the AFM may be combined and measured.

However, when measuring the absolute position of the transfer pattern, it is expected that the measurement will take time and the system will be expensive in order to realize highly accurate measurement. In order to avoid this, the relative position between transfer patterns (interval between pattern elements) may be measured. For example, a plurality of pattern elements of the transfer pattern are simultaneously measured with a scope. At this time, the scope measures the relative position of two pattern elements in the same field of view, so that the accuracy of the stage can be relaxed. Moreover, since two pattern elements that are integrated as a transfer pattern are measured, noise elements such as scope vibration can be reduced.

FIGS. 6A and 6B are diagrams showing the configuration of a measuring device 300 that measures the transfer pattern transferred to the imprint material 105 on the substrate 106B. The measuring device 300 shown in FIG. 6A irradiates the light emitted from the light source 301 onto the transfer pattern transferred to the imprint material 105 via the optical elements 302 and 303. The light reflected by the transfer pattern is detected by the sensor 305 via the optical elements 302, 303 and 304. Here, the optical element 302 includes, for example, a half mirror and a polarization beam splitter. When a polarization beam splitter is used as the optical element 302, a λ/2 plate is placed between the light source 301 and the optical element 302, and a λ/4 plate is placed between the optical element 302 and the transfer pattern. It is good to arrange. Thereby, the light from the transfer pattern can be detected by the sensor 305 while suppressing a decrease in the amount of light. Further, the light source 301 and the sensor 305, which are heat sources, are affected by heat when they are close to the transfer pattern. Therefore, it is preferable to use a fiber or the like and arrange them at positions sufficiently distant from the transfer pattern.

Further, in the measuring device 300 shown in FIG. 6B, the diaphragm 306 is arranged between the light source 301 and the transfer pattern and at a position optically Fourier-transforming the transfer pattern. This makes it possible to realize a so-called dark-field detection method of illuminating the transfer pattern with oblique incidence and detecting light around the optical axis.

Further, in order to measure a desired position of the transfer pattern, it is necessary to change the relative position between the measuring device 300 and the substrate 106B. In this case, the measuring device 300 may be moved, the substrate 106B may be moved, or both the measuring device 300 and the substrate 106B may be moved.

A process of measuring the local deformation of the mold 103 after the contact and correcting the deformation will be described with reference to FIG. 7. In step S601, the imprint material 105 on the reference substrate is brought into contact with the measurement mold 103A to transfer the line pattern LP of the mold 103A. In other words, a transfer pattern corresponding to the line pattern LP of the mold 103A is formed on the reference substrate. Here, the reference substrate is a substrate (flat substrate) having no unevenness as shown in FIG. Therefore, the line pattern LP of the mold 103A is transferred onto the reference substrate without changing its position.

In step S602, the transfer pattern formed on the reference substrate in step S601 is measured to obtain the reference pattern. To measure the transfer pattern formed on the reference substrate, the measuring device 300 shown in FIGS. 6A and 6B may be used. At this time, as long as sufficient accuracy is obtained, the absolute position of the transfer pattern may be measured, or the relative position between the transfer patterns (interval between pattern elements) may be measured.

In this embodiment, the pattern obtained from the measured value of the transfer pattern formed on the reference substrate is used as the reference pattern, but the present invention is not limited to this. The reference pattern only needs to be able to specify the position of the reference pattern. Therefore, a pattern obtained from the design value of the pattern of the mold 103A (line pattern LP) or a pattern obtained from the measured value of the pattern of the mold 103A may be used as the reference pattern. Further, a pattern obtained from the design value of the pattern transferred under a predetermined transfer condition may be used as the reference pattern. In other words, the reference pattern can be in the form of a pattern that is not affected by the influence of the substrate such as unevenness of the substrate or the transfer process (the influence is controlled).

When the pattern obtained from the measured value of the transfer pattern formed on the reference substrate is used as the reference pattern as in the present embodiment, the reference pattern includes the device factor (relative to the mold 103A at the time of contact and the reference substrate). Deformation of the mold 103A due to a certain inclination) is also included. Therefore, it is possible to obtain the difference due to the difference between the substrates. On the other hand, when the pattern obtained from the design value or the measured value of the pattern of the mold 103A is used as the reference pattern, the reference pattern does not include the deformation of the mold 103A due to the device factor. Therefore, the amount of deformation of the transfer pattern with respect to the pattern of the mold 103A can be obtained. Therefore, it is preferable to properly use the reference pattern according to the application.

In step S603, the imprint material 105 on the target substrate is brought into contact with the measurement mold 103A to transfer the line pattern LP of the mold 103A. In other words, a transfer pattern corresponding to the line pattern LP of the mold 103A is formed on the target substrate. Here, the target substrate is a substrate corresponding to an actual substrate to which the pattern of the mold 103 is transferred or a pilot substrate, and is generally a substrate having irregularities as shown in FIG. 5B. Therefore, the mold 103A is deformed according to the unevenness of the target substrate, so that the transfer pattern formed on the target substrate is locally deformed (distorted). Further, the transfer pattern formed on the target substrate may be deformed due to a device factor.

In step S604, the transfer pattern formed on the target substrate in step S603 is measured to obtain the transfer pattern. To measure the transfer pattern formed on the target substrate, the measuring device 300 shown in FIGS. 6A and 6B may be used. At this time, if sufficient accuracy can be obtained, the absolute position of the transfer pattern may be measured, or the relative position between the transfer patterns may be measured. However, it is necessary to match the measurement target (absolute position or relative position) in S602. This makes it possible to capture local deformation (distortion) and higher-order components that have occurred in the transfer pattern (within the shot) on the target substrate.

In S605, the reference pattern acquired in S602 is compared with the transfer-time pattern acquired in S604 to acquire the difference between the reference pattern and the transfer-time pattern.

In step S606, the distortion distribution of the transfer pattern is acquired based on the difference between the reference pattern acquired in step S605 and the transfer pattern. In S606, the difference between the measured values at the same position of the reference pattern and the transfer-time pattern may be simply acquired as the distribution of distortion, or the distribution of distortion may be obtained by calculating the difference for each component using a polynomial difference. May be obtained.

In S607, the local deformation of the mold 103A after the contact is obtained based on the distribution of the distortion of the transfer pattern acquired in S606.

In S608, it is determined whether the local deformation of the mold 103A obtained in S607 is less than or equal to a threshold value. The threshold value is determined (set) according to the overlay accuracy required by the device. When transferring a highly precise pattern, the threshold value is generally a strict value. If the local deformation of the mold 103A obtained in S607 is less than or equal to the threshold, the process proceeds to S609, and if the local deformation of the mold 103 obtained in S607 is not less than the threshold, the process proceeds to S610.

In S609, the process shifts to an actual production process using the mold 103, and the pattern of the mold 103 is transferred to the imprint material 105 on the substrate under the same conditions (imprint conditions) as the transfer of the measurement mold 103A. ..

In S610, the imprint condition is changed so as to reduce (correct) the shape difference between the pattern of the mold 103A and the shot area on the target substrate, based on the local deformation of the mold 103A obtained in S607. Then, the transfer pattern of the mold 103A is formed on the target substrate under the changed imprint conditions (S603). By repeating such a process, the imprint condition under which the local deformation of the mold 103A becomes equal to or less than the threshold value is determined.

The change of the imprint condition will be specifically described. For example, when the imprint material 105 is supplied from the supply unit 112, by changing at least one of the amount and the position of the imprint material 105 supplied from the supply unit 112, the pattern of the mold 103A and the shot area on the target substrate can be formed. Reduce the difference in shape. Specifically, by increasing or decreasing the supply amount of the imprint material 105 supplied to the position on the substrate corresponding to the position where the mold 103A is locally deformed or the periphery thereof, the mold 103A is locally supplied. The deformation can be alleviated.

Further, by applying a force to the side surface of the mold 103A to deform the pattern of the mold 103A, the shape difference between the pattern of the mold 103A and the shot region on the target substrate may be reduced. In this case, as shown in FIG. 1, the deforming portion 150, which is arranged around the mold 103 (103A) and deforms the pattern by applying a force to the side surface of the mold 103, includes the pattern of the mold 103 and the shot area on the substrate. It functions as a correction unit that corrects the shape difference between

Furthermore, by partially irradiating the target substrate with light and applying heat to partially thermally deform the target substrate (shot region), the difference in shape between the pattern of the mold 103A and the shot region on the target substrate is reduced. May be. In this case, as shown in FIG. 1, the heating unit 160 that deforms the shot region by applying heat to the substrate 106 corrects the shape difference between the pattern of the mold 103 (103A) and the shot region on the substrate. Function as. In addition, applying a force to the side surface of the mold 103A and applying heat to the target substrate may be combined to reduce the difference in shape between the pattern of the mold 103A and the shot region on the target substrate.

It is also known that the shape of the transfer pattern changes depending on the relative inclination between the mold 103A and the target substrate at the time of contact, the pressing force, the amount by which the mold 103A is intentionally deformed at the time of contact, and the like. Therefore, by obtaining these sensitivities to the local deformation of the mold 103A in advance, it is possible to use them as the correction knobs. Even when obtaining such sensitivity, it is possible to grasp even local deformation of the mold 103A by adopting the method of the present embodiment. In S603, the transfer pattern was formed on the target substrate. However, as in S601, the reference substrate may be used to confirm the local deformation of the mold 103A while changing the device parameters.

Further, the pattern of the mold 103 may be corrected. Specifically, the pattern of the mold 103 is designed in consideration of the local deformation of the mold 103A. For example, in the portion where the pattern spreads when contacting, the pattern of the portion is reduced so that the target transfer pattern is formed on the substrate by the deformation of the mold 103 when contacting.

In S604, generally, the transfer pattern formed on the target substrate is irradiated with light to optically measure the transfer pattern. At this time, if a device pattern is formed on the target substrate, light (signal) from the device pattern is also detected. In the present embodiment, since the purpose is to measure only the transfer pattern and obtain the difference from the reference pattern, if light from the device pattern is mixed, it becomes noise. Therefore, it is preferable to reduce the mixing of the signal (light) from the substrate side (device pattern) by the measures described below.

For example, the wavelength of the light with which the transfer pattern is irradiated is optimized. For example, a target substrate is often formed with multiple layers made of various materials in order to manufacture a device. In this case, at the predetermined wavelength, the signal may not return due to the interference condition. In addition, a specific wavelength may not be transmitted depending on the characteristics of the material.

The method of detecting light from the transfer pattern may be optimized. In the so-called bright-field detection method in which the 0th-order light with respect to the illumination light is detected as detection light, it is conceivable that signals from the substrate side may be mixed and acquired. On the other hand, in the case of a so-called dark-field detection method in which light after the secondary light with respect to the illumination light is detected as detection light, discrimination from a signal from the substrate side can be performed. Further, even in dark field detection, in dipole illumination or the like in which illumination light is incident from a specific direction, setting can be made according to the direction of the transfer pattern, so that a difference in signal intensity from the signal from the substrate side can be generated.

Further, if a confocal scope that acquires only a signal from a predetermined focus plane is used, the signal from the substrate side can be reduced and the signal from the transfer pattern can be acquired.

When measuring the local deformation of the mold 103A, the material used may be changed as compared with the actual imprint process using the mold 103. For example, between the target substrate and the imprint material 105, specifically, on the uppermost surface of the target substrate (the surface to which the imprint material 105 is supplied), a substance that does not easily transmit the light irradiating the transfer pattern is provided. Good. Here, the substance that does not easily transmit the light with which the transfer pattern is irradiated is a substance whose transmittance with respect to the light with which the transfer pattern is irradiated is lower than the reference transmittance. In the die-by-die alignment method, the mark formed on the mold and the mark formed on the substrate are measured at the same time to calculate the relative position. Therefore, it is necessary to observe the mark on the substrate side during transfer. Therefore, the reference transmittance can be, for example, the transmittance in a state where the substrate-side mark can be sufficiently observed. Further, if the substance has a different transmittance depending on the wavelength, it is possible to detect the mark on the substrate or the mold by using the light having the wavelength that is easily transmitted, and to measure the transfer pattern by using the light having the wavelength that is difficult to be transmitted.

Further, a predetermined substance may be added to the imprint material 105 in order to facilitate measurement of the transfer pattern. For example, if a substance that does not easily transmit the light irradiating the transfer pattern is added to the imprint material 105, the device pattern formed on the target substrate becomes difficult to detect. When a substance having a high refractive index is added to the imprint material 105, the signal intensity from the transfer pattern increases. In addition, when a phosphor is added to the imprint material 105, the transfer pattern itself is irradiated with ultraviolet light, so that the transfer pattern itself emits light to facilitate detection.

Alternatively, a signal from the target substrate may be acquired before forming the transfer pattern, and the signal may be subtracted from the signal obtained after forming the transfer pattern. In this case, noise may increase unless the positional relationship of signals is accurately matched and subtracted. Therefore, the signal from the device pattern can be accurately removed by subtracting the signal based on the strong signal of the device pattern.

While reducing noise by such measures, the absolute position of the transfer pattern or the relative position between the transfer patterns is measured, and the difference between the reference pattern and the transfer pattern is obtained. Specifically, by obtaining the difference between the measurement values at the same position, the difference at that position can be grasped. By performing such processing within the shot, the deformation (strain) at each position of the mold 103A can be measured.

In the present embodiment, the case where the line pattern LP parallel to the Y direction is formed on the entire surface of the pattern area of the mold 103A has been described as an example, but the periodic pattern formed on the mold 103A is not limited to this. Not something. With the line pattern LP shown in FIG. 4A, the deformation of the mold 103A in the X direction can be measured, but the deformation of the mold 103A in the Y direction cannot be measured. Therefore, when using a measurement mold in which a line pattern parallel to only one direction (for example, the X direction) is used, a line pattern parallel to a direction different from the one direction (for example, the Y direction). It is necessary to use a measurement mold in which is formed.

Further, when it is desired to measure the deformation of the mold in a plurality of directions using one measurement mold, as shown in FIG. 8A, a grid pattern (lattice pattern) is formed in the pattern area of the mold 103A. ) GP may be formed. FIG. 8B is an enlarged view showing the lattice pattern GP. When it is desired to measure the deformation in each of the X direction and the Y direction, the deformation in the X direction and the Y direction can be measured by one measurement mold by measuring the portion of the transfer pattern corresponding to the desired direction. You can In FIG. 8B, the portion of the transfer pattern to be measured when measuring the deformation in each of the X direction and the Y direction is indicated by a dotted line.

Further, as shown in FIG. 8C, the dot pattern DP may be formed in the pattern area of the mold 103A. FIG. 8D is an enlarged view showing the dot pattern DP. In this case, the number of measurable directions increases, and it becomes possible to measure in any direction depending on the combination. In FIG. 8D, a portion of the transfer pattern to be measured when measuring the deformation in each of the X direction, the Y direction, and the diagonal direction is indicated by a dotted line.

Further, in the present embodiment, the intervals of the periodic patterns formed in the pattern area of the mold 103A are illustrated as equal intervals, but the intervals of the periodic patterns are not limited to equal intervals. Since it suffices to measure the difference between the reference pattern and the transfer pattern, the periodic pattern intervals may be unequal intervals.

For example, it is possible to predict a portion of the mold that is likely to be deformed from the pattern (underlying pattern) formed on the target substrate (specifically, a portion where the pattern is larger than the others or a boundary portion where the pattern uniformity is interrupted). It is possible. Further, regarding the deformation of the mold due to the imprint condition, the outer peripheral portion of the shot area is more significantly affected as disclosed in JP-A-2016063054 and JP-A-2016-143838. It is advisable to form a finer pattern on the portion of the mold where such deformation is considered to be large and to perform detailed measurement. If a similar pattern is repeatedly formed, a reference (mark) for capturing the position at the time of measurement is required. Therefore, a reference mark is formed for each desired region, and the pattern width and The size may be changed and used as a reference.

As described above, since the deformation of the mold due to the imprint conditions remarkably appears in the outer peripheral portion of the shot area, it is better to perform the imprint process by matching the relative positions of the mold and the substrate. In the case of the die-by-die alignment method, marks corresponding to the marks formed on the substrate are formed on the mold, and the relative positions of these marks are measured during the imprinting process to match the relative positions of the mold and the substrate. In the case of the global alignment method in which the marks formed on the substrate are measured in advance and the measurement results are statistically calculated to obtain the array of shot areas, it is necessary to form the marks corresponding to the marks formed on the substrate on the mold. There is no.

Regarding the measurement of the local deformation of the mold 103A, if the measurement unit (for example, the measurement device 300) that satisfies the required accuracy can be provided in the imprint device 100, the measurement unit provided in the imprint device 100 can be used. It is good to measure. However, as described above, if a complicated process such as removing the influence of the signal from the target substrate is required, the measurement may be performed by a measuring device provided outside the imprint apparatus 100. In the present embodiment, it is sufficient that the transfer pattern formed on the target substrate can be measured, and the relative position between the target substrate and the transfer pattern does not change. Therefore, a measuring device provided outside the imprint apparatus 100 can be used. It is possible.

In the present embodiment, as the lithographic apparatus, an imprint apparatus susceptible to the influence of the substrate has been described as an example, but the present invention is not limited to this. Even in the exposure apparatus, it is possible to obtain local deformation (distortion) and higher-order components of the original plate (reticle or mask) by forming a similar transfer pattern on the substrate. Specifically, the resist on the substrate is exposed through a measurement mask, and a transfer pattern formed through a developing process is measured. For such measurement, it is possible to use not only optical measurement but also tactile measurement. Further, if it is an optical measurement, the transfer pattern can be measured immediately. If a so-called latent image resist is used, it is possible to perform the measurement without the developing step.

It is also possible to directly measure the pattern of the mold 103A (line pattern LP or the like) while the imprint material 105 on the target substrate is in contact with the measuring mold 103A. Since the transfer pattern formed on the target substrate is the final result obtained through the transfer process and the mold release process, the timing at which the mold 103A deforms cannot be separated. However, by measuring the pattern of the mold 103A at the time of contact, it is possible to separate the timing at which the deformation of the mold 103A occurs (to determine the cause of the deformation).

9(a), 9(b), 9(c) and 9(d) show a state where the imprint material 105 on the target substrate and the measurement mold 103A are in contact with each other. .. As described above, as an example of the method for curing the imprint material 105, the imprint material 105 is irradiated with ultraviolet light to cure the imprint material 105 in a state where the imprint material 105 and the mold 103A are in contact with each other. There is a photo-curing method. In this case, since the imprint material 105 is irradiated with ultraviolet light through the mold 103A, the mold 103A is made of quartz or the like having a red transmittance for ultraviolet light. However, since the physical property (refractive index) of quartz is close to the physical property (refractive index) of the imprint material 105, when the mold 103A and the imprint material 105 are in contact with each other, the periodic pattern formed on the mold 103A is not changed. It is difficult to measure.

Therefore, as shown in FIG. 9A, the pattern of the mold 103A can be measured by providing a substance 115 having physical properties different from those of the imprint material 105 in the pattern (pattern portion) of the mold 103A. It can be so. The substance 115 is a metal such as Cr or Al and is provided on the pattern of the mold 103A by vapor deposition. Further, as shown in FIG. 9B, a substance 115 having physical properties different from those of the imprint material 105 may be provided on a portion other than the pattern of the mold 103A. In other words, the pattern of the mold 103A can be measured by making the physical properties of the pattern (pattern portion) of the mold 103A different from the physical properties of the portion (base portion) other than the pattern of the mold 103A.

On the other hand, as shown in FIG. 9C, the physical properties of the imprint material 105 may be different from the physical properties of the mold 103A. For example, by adding a substance having low transparency to the imprint material 105, the imprint material 105 filled in the pattern of the mold 103A can be measured. It is also possible to add a phosphor to the imprint material 105 and irradiate it with ultraviolet light to measure the pattern (the imprint material 105 filled in) of the mold 103A.

Further, as shown in FIG. 9D, the physical properties of the mold 103A can be changed by implanting ions 117 into the mold 103A or forming different substances. In this way, the physical properties of the mold 103A may be changed to make the physical properties of the mold 103A different from the physical properties of the imprint material 105.

In any of the cases shown in FIGS. 9A to 9D, the contrast between the pattern of the mold 103A and the portion other than the pattern can be improved. Therefore, the pattern of the mold 103A can be directly measured while the imprint material 105 and the mold 103A are in contact with each other.

With reference to FIGS. 10A and 10B, a measuring device 200 for measuring a pattern of the mold 103A in a state where the imprint material 105 on the target substrate and the measuring mold 103A are in contact with each other. explain. The measuring device 200 measures the pattern from the surface (rear surface) opposite to the surface (surface on which the pattern is formed) of the mold 103A.

The measuring apparatus 200 shown in FIG. 10A irradiates the pattern of the mold 103A with the light emitted from the light source 201 via the optical elements 202 and 203. The light reflected by the pattern of the mold 103A is detected by the sensor 205 via the optical elements 202, 203 and 204. Here, the optical element 202 includes, for example, a half mirror and a polarization beam splitter. When a polarization beam splitter is used as the optical element 202, a λ/2 plate is placed between the light source 201 and the optical element 202, and a λ/4 plate is placed between the optical element 202 and the mold 103A. It is good to arrange. Thereby, the light from the pattern of the mold 103A can be detected by the sensor 205 while suppressing a decrease in the light amount. Further, the light source 201 and the sensor 205, which are heat sources, are affected by heat when the mold 103A is close to the mold 103A.

Further, in the measuring apparatus 200 shown in FIG. 10B, the diaphragm 206 is arranged between the light source 201 and the mold 103A and at a position where it is optically Fourier-transformed to the mold 103A. This makes it possible to realize a so-called dark-field detection method in which the mold 103A is illuminated with oblique incidence and light around the optical axis is detected.

If it can be spatially configured, it is possible to reduce the detection of a signal (light) from the substrate 106B by measuring the pattern of the mold 103A with a confocal microscope or the like. In addition, as described above, measures may be taken to reduce the signal from the board 106B.

Further, in order to measure the desired position of the mold 103A, it is necessary to change the relative position between the measuring device 200 and the substrate 106B. In this case, the measuring device 200 may be moved, the substrate 106B may be moved, or both the measuring device 200 and the substrate 106B may be moved.

As described above, it is possible to measure the local deformation of the mold 103A by directly measuring the pattern of the mold 103A while the imprint material 105 on the substrate and the mold 103A are in contact with each other. Further, unlike the measuring apparatus 300, the measuring apparatus 200 needs to be provided inside the imprint apparatus 100 (built in the imprint apparatus 100).

The pattern of the cured product formed by using the imprint apparatus 100 is used permanently on at least a part of various articles or temporarily when manufacturing various articles. The article is an electric circuit element, an optical element, a MEMS, a recording element, a sensor, a mold, or the like. Examples of the electric circuit element include volatile or non-volatile semiconductor memory such as DRAM, SRAM, flash memory, and MRAM, and semiconductor elements such as LSI, CCD, image sensor, and FPGA. Examples of the mold include a mold for imprinting.

The pattern of the cured product is used as it is as a constituent member of at least a part of the above-mentioned article, or is temporarily used as a resist mask. After etching or ion implantation is performed in the substrate processing step, the resist mask is removed.

Next, a specific method for manufacturing the article will be described. As shown in FIG. 11A, a substrate 106 such as a silicon wafer on which a work material such as an insulator is formed is prepared, and then an imprint material is formed on the surface of the work material by an inkjet method or the like. 105 is given. Here, the imprint material 105 in the form of a plurality of droplets is shown applied on the substrate.

As shown in FIG. 11B, the imprint mold 103 is made to face the imprint material 105 on the substrate with the side on which the concavo-convex pattern is formed facing. As shown in FIG. 11C, the substrate 106 provided with the imprint material 105 is brought into contact with the mold 103, and pressure is applied. The imprint material 105 is filled in the gap between the mold 103 and the material to be processed. In this state, when light is irradiated as energy for curing through the mold 103, the imprint material 105 is cured.

As shown in FIG. 11D, when the imprint material 105 is cured and then the mold 103 and the substrate 106 are separated, a pattern of a cured product of the imprint material 105 is formed on the substrate. The pattern of the cured product has a shape in which the concave portions of the mold 103 correspond to the convex portions of the cured product and the convex portions of the mold 103 correspond to the concave portions of the cured product, that is, the imprint material 105 has unevenness The pattern has been transferred.

As shown in FIG. 11E, when etching is performed using the pattern of the cured product as an etching resistant mask, the portion of the surface of the material to be processed where the cured product is absent or remains thin is removed to form a groove. .. As shown in FIG. 11(f), by removing the pattern of the cured product, an article having grooves formed on the surface of the material to be processed can be obtained. Although the pattern of the cured product is removed here, it may be used as a film for interlayer insulation included in a semiconductor element or the like, that is, as a constituent member of an article without being removed even after processing.

The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the following claims are attached to open the scope of the invention.

100: Imprint apparatus 103: Mold 103A: Mold for measurement 105: Imprint material 106: Substrate 112: Supply unit 113: Control unit

Claims (26)

A measurement method for measuring deformation of a pattern formed by bringing a mold into contact with an imprint material on a substrate, the deformation being influenced by the substrate or the deformation being affected by a transfer process,
A periodic pattern is formed on a surface of the mold that contacts the imprint material,
The measuring method is
A first step of bringing the mold into contact with an imprint material on the substrate to transfer the pattern to the imprint material;
A second step of measuring a difference between the transfer pattern transferred to the imprint material in the first step and a reference pattern in which the influence of the substrate or the transfer step is controlled;
A third step of acquiring a distribution of deformation of the transfer pattern based on the difference measured in the second step,
And a measuring method. The measurement method according to claim 1, wherein the unevenness of the substrate is obtained based on the distribution acquired in the third step. The measurement method according to claim 1, wherein the deformation of the mold when contacted with the imprint material on the substrate is obtained based on the distribution obtained in the third step. 4. The periodic pattern is formed in a region corresponding to a shot region on the substrate on a surface of the mold that contacts the imprint material. The measuring method according to item 1. The reference pattern is a pattern obtained from a design value of the pattern of the mold, a pattern obtained from a measured value of the pattern of the mold, or a pattern transferred by contacting the mold with an imprint material on a reference substrate. The measuring method according to claim 1, further comprising a pattern obtained from a measured value or a pattern obtained from a design value of a pattern transferred under a predetermined transfer condition. The measurement method according to claim 1, wherein the pattern includes at least one of a line pattern, a dot pattern, and a lattice pattern. 7. In the second step, an absolute position of each pattern element forming the transfer pattern or an interval between the pattern elements forming the transfer pattern is measured. Measuring method described in paragraph. 8. The measuring method according to claim 1, wherein in the third step, the distribution is acquired by decomposing the difference into a polynomial and obtaining a difference for each component. In the second step, the transfer pattern is irradiated with light to measure the transfer pattern,
The measuring method according to claim 1, wherein a transmittance of the imprint material with respect to the light is lower than a reference transmittance. In the second step, the transfer pattern is irradiated with light to measure the transfer pattern,
9. The substance having a transmittance for the light lower than a reference transmittance is provided between the substrate and the imprint material, according to claim 1. Measuring method. A measuring method for measuring deformation caused in the mold by bringing the mold into contact with an imprint material on a substrate,
A periodic pattern is formed on a surface of the mold that contacts the imprint material,
The measuring method is
A first step of measuring a pattern of the mold in a state where the mold is in contact with an imprint material on the substrate;
A second step of obtaining a difference between the pattern measured in the first step and a reference pattern in which an influence of a substrate or a transfer step is controlled;
A third step of obtaining the deformation of the mold based on the difference measured in the second step,
And a measuring method. The mold includes a base portion and a pattern portion in which the pattern is formed,
The measuring method according to claim 11, wherein the pattern portion is made of a substance having physical properties different from those of the substance forming the base. The measuring method according to claim 11, wherein the imprint material has physical properties different from those of a material forming the mold. In the first step, the pattern is measured by irradiating the pattern with light in a state where the mold is in contact with the imprint material on the substrate,
14. The measuring method according to claim 11, wherein a transmittance of the imprint material with respect to the light is lower than a reference transmittance. The measuring method according to claim 14, wherein the imprint material contains a phosphor. The mold includes a base portion and a pattern portion in which the pattern is formed,
The measurement method according to claim 11, wherein ions are implanted in the pattern portion. In the first step, the pattern is measured by irradiating the pattern with light in a state where the mold is in contact with the imprint material on the substrate,
The measurement method according to claim 11, wherein a substance having a transmittance with respect to the light lower than a reference transmittance is provided between the substrate and the imprint material. An imprint apparatus for performing an imprint process for forming a pattern of an imprint material on a substrate using a mold,
A control unit that performs a process of determining a deformation caused in the mold by contacting the mold with the imprint material on the substrate, and performs the imprint process so as to reduce the deformation determined in the process,
The control unit, the periodic pattern is formed on the surface in contact with the imprint material on the substrate, performs the process using a measurement mold different from the mold,
The processing is
A first step of bringing the measuring mold into contact with an imprint material on the substrate to transfer the periodic pattern to the imprint material;
A second step of measuring a difference between the transfer pattern transferred to the imprint material in the first step and a reference pattern serving as a reference of the pattern;
A third step of acquiring a strain distribution of the transfer pattern based on the difference measured in the second step,
A fourth step of obtaining the deformation of the mold due to the unevenness of the substrate based on the distribution obtained in the third step;
An imprint apparatus comprising: 19. The imprint apparatus according to claim 18, further comprising a correction unit that corrects a shape difference between the pattern of the mold and a shot area on the substrate based on the deformation obtained in the processing. 20. The imprint apparatus according to claim 19, wherein the correction unit includes a deformation unit that deforms the pattern by applying a force to a side surface of the mold. 21. The imprint apparatus according to claim 19, wherein the correction unit includes a heating unit that deforms the shot area by applying heat to the substrate. Further comprising a supply unit for supplying the imprint material on the substrate,
20. The imprinting device according to claim 19, wherein the correction unit corrects the shape difference by changing at least one of an amount and a position of the imprint material supplied from the supply unit onto the substrate. Printing equipment. A step of forming a pattern on a substrate using the imprint apparatus according to any one of claims 18 to 22,
A step of treating the substrate on which the pattern is formed in the step,
Manufacturing an article from the treated substrate,
A method for manufacturing an article, comprising: A measuring method for measuring deformation of a transfer pattern transferred onto a substrate, which is affected by the substrate,
A first step of transferring the periodic pattern formed on the original onto the substrate;
A second step of measuring a difference between the transfer pattern transferred onto the substrate in the first step and a reference pattern not influenced by the substrate;
A third step of acquiring a distribution of deformation of the transfer pattern based on the difference measured in the second step,
And a measuring method. 25. The measuring method according to claim 24, further comprising a fourth step of obtaining unevenness of the substrate based on the distribution obtained in the third step. A measuring device for measuring the deformation of a transfer pattern transferred onto a substrate, which is affected by the substrate,
It has a control unit that performs the process of measuring the deformation,
The processing is
A first step of transferring the periodic pattern formed on the original onto the substrate;
A second step of measuring a difference between the transfer pattern transferred onto the substrate in the first step and a reference pattern not influenced by the substrate;
A third step of acquiring a distribution of deformation of the transfer pattern based on the difference measured in the second step,
A measuring device comprising:

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