JP2020120020A - Magnetic storage device - Google Patents

Abstract

To provide a magnetic storage device which can operate stably.SOLUTION: A magnetic storage device includes a storage unit and a control unit. The storage unit includes a storage element, a conductive member, and a terminal. The storage element includes: a switch element; and a magnetic element electrically connected in series to the switch element. The terminal is electrically connected to the switch element. The control unit is electrically connected to the terminal and the conductive member. The control unit at least performs a selective write operation and a read operation. In the selective write operation, the control unit supplies a current to the conductive member. In the read operation, the control unit applies a read pulse to a portion between the conductive member and the terminal so as to detect a value corresponding to an electric resistance. The read pulse includes: a first period having a first read voltage; and a second period, after the first period, having a second read voltage. An absolute value of the second read voltage is lower than that of the first read voltage.SELECTED DRAWING: Figure 1

Description

Embodiments of the present invention relate to a magnetic storage device.

Stable operation is desired in a magnetic storage device.

JP, 2005-61043, A

Embodiments of the present invention provide a magnetic storage device capable of stable operation.

According to an embodiment of the present invention, a magnetic storage device includes a storage unit and a control unit. The storage unit includes a first storage element, a first conductive member, and a first terminal. The first conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first memory element includes a first switch element and a first magnetic element electrically connected in series with the first switch element. The first magnetic element is electrically connected to the third portion. The first terminal is electrically connected to the first switch element. The controller is electrically connected to the first terminal and the first conductive member. The controller performs at least a first selection write operation and a read operation. In the first selective write operation, the control unit supplies a first current from the first portion to the second portion to the first conductive member. In the read operation, the control unit applies a read pulse between the first conductive member and the first terminal to correspond to an electric resistance of a current path including the first conductive member and the first terminal. Detect the value. The read pulse includes a first period having a first read voltage, a second period having a second read voltage and a second period after the first period, and an absolute value of the second read voltage is the second period. 1 It is smaller than the absolute value of the read voltage.

1A and 1B are schematic views illustrating the magnetic memory device according to the first embodiment. 2A and 2B are schematic views illustrating the magnetic memory device according to the first embodiment. 3A to 3D are schematic views illustrating the operation of the magnetic memory device according to the first embodiment. FIG. 4 is a schematic view illustrating the operation of the magnetic memory device according to the first embodiment. 5A to 5D are schematic views illustrating the magnetic memory device according to the first embodiment. FIG. 6 is a schematic view illustrating the magnetic memory device according to the second embodiment. FIG. 7 is a schematic view illustrating the magnetic memory device according to the third embodiment. 8A to 8C are schematic views illustrating the magnetic memory device according to the fourth embodiment. FIG. 9 is a schematic view illustrating the magnetic memory device according to the fifth embodiment.

Each embodiment of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each portion, the size ratio between the portions, and the like are not always the same as the actual ones. Even when the same portion is shown, the dimensions and ratios may be different depending on the drawings.
In the specification and the drawings of the application, components similar to those described in regard to a drawing thereinabove are marked with like reference numerals, and a detailed description is omitted as appropriate.

(First embodiment)
FIG. 1A, FIG. 1B, FIG. 2A, and FIG. 2B are schematic views illustrating the magnetic memory device according to the first embodiment.
FIG. 1A is a schematic diagram including schematic cross-sectional views of some elements of the magnetic memory device 110 according to the embodiment. FIG. 1B is a schematic diagram illustrating a pulse waveform in a read operation performed by the magnetic storage device 110. 2A and 2B exemplify the write operation performed in the magnetic storage device 110. The write operation is an operation for storing information in the magnetic storage device.

As shown in FIG. 1A, the magnetic storage device 110 according to the embodiment includes a storage unit MP and a control unit 70.

The memory part MP includes a first memory element ME1, a first conductive member 21, and a first terminal T1. The first conductive member 21 includes a first portion 21a, a second portion 21b and a third portion 21c. The third portion 21c is provided between the first portion 21a and the second portion 21b.

The first conductive member 21 includes at least one selected from the group consisting of Ta, W, Pt, and Au, for example. The first conductive member 21 may further include boron, for example.

The first memory element ME1 includes a first switch element SC1 and a first magnetic element SB1. The first magnetic element SB1 is electrically connected in series with the first switch element SC1.

The first magnetic element SB1 is electrically connected to the third portion 21c. The first terminal T1 is electrically connected to the first switch element SC1.

The first magnetic element SB1 includes a first magnetic layer 11, a first opposing magnetic layer 11c, and a first nonmagnetic layer 11n. The first opposing magnetic layer 11c is provided between the third portion 21c and the first magnetic layer 11. The first nonmagnetic layer 11n is provided between the first magnetic layer 11 and the first opposing magnetic layer 11c. For example, the first opposing magnetic layer 11c contacts the third portion 21c.

At least one of the first magnetic layer 11 and the first opposing magnetic layer 11c includes at least one selected from the group consisting of Fe and Co. At least one of the first magnetic layer 11 and the first opposing magnetic layer 11c may further contain boron. The first nonmagnetic layer 11n includes, for example, at least one selected from the group consisting of Mg, Ca, Sr, Ti, V, Nb, and Al, and oxygen. The first nonmagnetic layer 11n contains, for example, MgO. The first nonmagnetic layer 11n is a tunnel barrier layer. The first magnetic element SB1 is, for example, an MTJ element.

For example, the first switch element SC1 includes a first conductive layer 31, a first counter conductive layer 31c, and a first intermediate layer 31i. The first conductive layer 31 is electrically connected to the first terminal T1 and includes a metal. The first counter conductive layer 31c is electrically connected to the first magnetic element SB1 and contains a metal. The first intermediate layer 31i is provided between the first conductive layer 31 and the first counter conductive layer 31c. The first conductive layer 31 and the first counter conductive layer 31c are, for example, W layers.

The first intermediate layer 31i includes at least one selected from the group consisting of Mg, Al, Si, Ti, V, Cu, Zn, Ge, Sr, Zr, Nb, Sb, Te, Hf, Ta and W. Contains the first element. The first intermediate layer 31i may further include at least one second element selected from the group consisting of oxygen and nitrogen. The first intermediate layer 31i is, for example, insulative. The first intermediate layer 31i includes, for example, HfO _x . The first intermediate layer 31i may include GeSbTe, for example.

The first switch element SC1 is, for example, an MIM element. The first switch element SC1 may be, for example, an MSM element.

In one example, the current flowing through the first switch element SC1 has a hysteresis characteristic with respect to the voltage applied to the first switch element SC1. An example of the characteristics of the first switch element SC1 will be described later.

The control unit 70 is electrically connected to the first terminal T1 and the first conductive member 21. For example, the control unit 70 is electrically connected to the first terminal T1 via the wiring 70a. The control unit 70 includes, for example, a drive circuit 75. The drive circuit 75 and the first terminal T1 are electrically connected by the wiring 70a. The transistor Sw1 (switch) may be provided on the wiring 70a.

The storage unit MP may further include a first conductive terminal Tc1 and a second conductive terminal Tc2. The first conductive terminal Tc1 is electrically connected to the first portion 21a. The second conductive terminal Tc2 is electrically connected to the second portion 21b. For example, the control unit 70 is electrically connected to the first conductive terminal Tc1 by the wiring 70e. For example, the control unit 70 is electrically connected to the second conductive terminal Tc2 by the wiring 70f. A transistor (switch) may be provided in at least one of the wiring 70e and the wiring 70f.

The control unit 70 performs at least the first selection write operation and the read operation. In this example, the control unit 70 further performs the second selection write operation.

FIG. 2A illustrates the first selection write operation SW1. FIG. 2B illustrates the second selection write operation SW2.

The electric resistance of the first memory element ME1 after the first selective write operation SW1 is different from the electric resistance of the first memory element ME1 after the second selective write operation SW2.

As shown in FIG. 2A, in the first selective write operation SW1, the control unit 70 supplies the first current I1 from the first portion 21a to the second portion 21b to the first conductive member 21. The direction of the magnetization of the first opposing magnetic layer 11c can be controlled by the action of the first current I1. This control is based on, for example, the spin Hall effect.

As shown in FIG. 2B, in the second selective write operation SW2, the control unit 70 supplies the second current I2 from the second portion 21b to the first portion 21a to the first conductive member 21. The direction of the magnetization of the first opposing magnetic layer 11c can be controlled to another direction by the action of the second current I2. This control is based on, for example, the spin Hall effect.

The angle between the magnetization direction of the first opposite magnetic layer 11c after the first selective write operation SW1 and the magnetization direction of the first magnetic layer 11 is the first opposite after the second selective write operation SW2. The angle between the magnetization direction of the magnetic layer 11c and the magnetization direction of the first magnetic layer 11 is different. For example, the magnetization direction of the first opposing magnetic layer 11c after the first selective write operation SW1 is substantially “antiparallel” to the magnetization direction of the first magnetic layer 11. For example, the magnetization direction of the first opposing magnetic layer 11c after the second selective write operation SW2 is substantially “parallel” to the magnetization direction of the first magnetic layer 11. The first opposing magnetic layer 11c is, for example, a magnetization free layer (for example, a storage layer). The first magnetic layer 11 is, for example, a reference layer.

The difference in the angle of these magnetization directions causes a difference in the electric resistance. Multiple states of different electrical resistance correspond to multiple stored states that are stored. For example, the high resistance state corresponds to one of “0” and “1”. For example, the low resistance state corresponds to the other of “0” and “1”.

Thus, in the first selective write operation SW1, the control unit 70 sets the first memory element ME1 to one of the first memory state and the second memory state. In the second selection write operation SW2, the control unit 70 sets the first storage element ME1 to the other of the first storage state and the second storage state.

In the read operation, the control unit 70 detects, for example, a value corresponding to the electric resistance of the first memory element ME1.

As shown in FIG. 1A, in the read operation RO, the control unit 70 applies the read pulse RP1 between the first conductive member 21 and the first terminal T1, and the first conductive member 21 and the first conductive member 21. A value corresponding to the electric resistance of the current path cp including the terminal T1 is detected. For example, the value corresponding to the electric resistance of the first memory element ME1 including the first magnetic element SB1 can be detected by detecting the magnitude of the current flowing through the current path cp. The control unit 70 includes, for example, a sense amplifier.

FIG. 1B illustrates the read pulse RP1. The horizontal axis of FIG. 1B is time tm. The vertical axis represents the voltage Va of the first terminal T1. The voltage Va may be the voltage of the output section of the output circuit (for example, the drive circuit 75) of the control section 70. The voltage Va may be the voltage of the wiring 70a. The voltage Va is, for example, a potential based on the potential of the first conductive member 21 (for example, the potential V0 of the first portion 21a).

As shown in FIG. 1B, the read pulse RP1 includes a first period pp1 and a second period pp2. The first period pp1 has the first read voltage Vr1. The second period pp2 is a period after the first period pp1. The second period pp2 has the second read voltage Vr2. The absolute value of the second read voltage Vr2 is smaller than the absolute value of the first read voltage Vr1. The polarity of the second read voltage Vr2 is the same as the polarity of the first read voltage Vr1.

As described above, in the read operation RO according to the embodiment, the read pulse RP1 including the first period pp1 of high voltage and the second period pp2 of low voltage is used. In the first memory element ME1, the first switch element SC1 is connected in series to the first magnetic element SB1. Therefore, the read pulse RP1 is applied to the first magnetic element SB1 and the first switch element SC1. A current based on the difference between the high resistance state and the low resistance state of the first magnetic element SB1 and the difference between the high resistance state and the low resistance state of the first switching element SC1 can be detected. As a result, the difference in detected current (difference in resistance) becomes larger than that in the case where the first memory element ME1 does not include the first switch element SC1. Thereby, the difference in the resistance state of the first magnetic element SB1 can be detected with high sensitivity. Stable read operation is possible. According to the embodiment, it is possible to provide a magnetic storage device capable of stable operation.

An example of characteristics of the first switch element SC1 and an example of read operation will be described later.

In the embodiment, the easiness of changing the magnetization of the first opposing magnetic layer 11c may change according to the voltage applied to the first magnetic element SB1.

For example, a voltage according to the voltage applied to the first terminal T1 is applied to the first magnetic element SB1. In one example, when the potential of the first magnetic layer 11 is negative with respect to the potential of the first conductive member 21, the magnetization direction of the first opposing magnetic layer 11c is likely to change. When the potential of the first magnetic layer 11 is 0 or positive, the magnetization direction of the first opposing magnetic layer 11c is unlikely to change. For example, by controlling the potential of the first magnetic layer 11 (or the potential of the first terminal T1), the electrical resistance does not substantially change even when the first current I1 or the second current I2 flows through the first conductive member 21. Operations can be performed.

The first selection write operation SW1 and the second selection write operation SW2 described above are performed by setting the first terminal T1 to a predetermined potential (for example, a non-selection potential).

As illustrated in FIG. 2A, for example, in the first selection write operation SW1, the control unit 70 supplies the first current I1 from the first portion 21a to the second portion 21b to the first conductive member 21. , The first selection write voltage Vs1 is applied to the first terminal T1. The first selection write voltage Vs1 has a first polarity based on the first conductive member 21. The first polarity is, for example, negative.

As shown in FIG. 2B, for example, in the second selective write operation SW2, the control unit 70 supplies the second current I2 from the second portion 21b to the first portion 21a to the first conductive member 21. , And the second selected write voltage Vs2 having the first polarity is applied to the first terminal T1. The magnitude (height) of the second selection write voltage Vs2 may be substantially the same as the magnitude (height) of the first selection write voltage Vs1.

The first selected write voltage Vs1 and the second selected write voltage Vs2 are, for example, voltages at which the magnetization of the first opposing magnetic layer 11c easily changes.

At this time, the first read voltage Vr1 and the second read voltage Vr2 illustrated in FIG. 1B have a second polarity opposite to the first polarity.

As described above, the polarity of the read pulse RP1 is opposite to the polarities of the first selective write operation SW1 and the second selective write operation SW2. In the read pulse RP1 having such a polarity, a waveform including a plurality of voltages (pulse heights) is used for the read operation RO. Thereby, for example, it is possible to detect the state of the electric resistance with high sensitivity while suppressing the influence of the read operation RO on the state of the electric resistance of the first memory element ME1.

The first polarity is one of negative and positive. The second polarity is the other of negative and positive.

As described later, the control unit 70 supplies the first current I1 or the second current I2 to the first conductive member 21 and sets the first terminal T1 to 0 volt or the potential of the second polarity. Furthermore, you may implement. This operation corresponds to the non-selection operation. An example of the non-selection operation will be described later.

Hereinafter, an example of the characteristics of the first switch element SC1 and an example of the read operation will be described.

3A to 3D are schematic views illustrating the operation of the magnetic memory device according to the first embodiment.
The horizontal axis of these figures is the voltage ΔV applied across the first switch element SC1. The voltage ΔV corresponds to, for example, the potential difference between the first conductive layer 31 and the first counter conductive layer 31c. The vertical axis of these figures is the current I flowing through the first switch element SC1.

As shown in FIG. 3A, in the first switch element SC1, the current-voltage characteristic exhibits hysteresis. The state where a large current I is obtained corresponds to the ON state. The state where a small current I is obtained corresponds to the off state.

As shown in FIG. 3B, a voltage that turns on the first switch element SC1 is applied. The first switch element SC1 is in the state pt1. The voltage that turns on corresponds to the first read voltage Vr1. After that, the second read voltage Vr2 having a low voltage is applied.

FIG. 3C corresponds to the case where the first magnetic element SB1 is in the low resistance state. FIG. 3D corresponds to the case where the first magnetic element SB1 is in the high resistance state.

As illustrated in FIG. 3C, when the second read voltage Vr2 having a low voltage is applied when the first magnetic element SB1 is in the low resistance state, the first switch element SC1 is in the state pt2. In this case, the first switch element SC1 is in the on state.

As shown in FIG. 3D, when the second read voltage Vr2 having a low voltage is applied when the first magnetic element SB1 is in the high resistance state, the first switch element SC1 passes through the state pt2. , State pt3. In this case, the first switch element SC1 is in the off state.

In this way, the first switch element SC1 enters the state pt2 (on state) or the state pt3 (off state) according to the resistance state of the first magnetic element SB1. The resistance ratio (current ratio) between these states is of the order of 10 ⁵ .

As described above, by using the read pulse RP1 including the high-voltage first read voltage Vr1 and the low-voltage second read voltage Vr2, the resistance state ratio (MR ratio) in the first magnetic element SB1 can be made smaller than that in the first magnetic element SB1. Large current differences (eg ratios) are obtained. According to the embodiment, stable read operation is possible. According to the embodiment, it is possible to provide a magnetic storage device capable of stable operation.

In the embodiment, the read pulse RP1 may include distortion.
FIG. 4 is a schematic view illustrating the operation of the magnetic memory device according to the first embodiment.
FIG. 4 shows another example of the read pulse RP1. As shown in FIG. 4, the read pulse RP1 may further include a third period pp3 in addition to the first period pp1 and the second period pp2. The third period pp3 is provided between the first period pp1 and the second period pp2. The third period pp3 is, for example, a transition period.

The rate of change of the read pulse RP1 with respect to time tm in the third period pp3 is higher than the rate of change of the read pulse RP1 with respect to time tm in the second period pp2. The read pulse RP1 having such a waveform may be used.

In the embodiment, in addition to the high voltage first period pp1 and the low voltage second period pp2, another period may be provided. The first period pp1 is a period including the highest voltage of the read pulse RP1. The highest voltage corresponds to the first read voltage Vr1. The second period pp2 is a period in which the rate of change of the read pulse RP1 with respect to the time tm is lower than that in other portions. By providing at least two such periods, a stable read operation becomes possible.

For example, the absolute value of the second read voltage Vr2 is 0.2 times or more and 0.8 times or less the absolute value of the first read voltage Vr1. The length of the second period pp2 is, for example, 0.2 times or more and 0.8 times or less the length of the read pulse RP1.

Hereinafter, an example of the non-selection operation will be described.
5A to 5D are schematic views illustrating the magnetic memory device according to the first embodiment.
As shown in FIG. 5A, in the magnetic storage device 110, the storage unit MP includes a second storage element ME2 and a second terminal in addition to the first storage element ME1, the first conductive member 21 and the first terminal T1. It may further include T2.

The first conductive member 21 includes a fourth portion 21d and a fifth portion 21e in addition to the first to third portions 21a to 21c. The second portion 21b is provided between the first portion 21a and the fourth portion 21d. A fifth portion 21e is provided between the second portion 21b and the fourth portion 21d.

The first direction from the third portion 21c toward the first magnetic layer 11 is, for example, the Z-axis direction. One direction perpendicular to the Z-axis direction is the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is the Y-axis direction. The second direction from the first portion 21a toward the second portion 21b intersects the first direction. The second direction is, for example, the X-axis direction.

The second memory element ME2 includes a second switch element SC2 and a second magnetic element SB2. The second magnetic element SB2 is electrically connected in series with the second switch element SC2. The second magnetic element SB2 is electrically connected to the fifth portion 21e. The second terminal T2 is electrically connected to the second switch element SC2. In this example, the second terminal T2 is electrically connected to the control unit 70 (for example, the drive circuit 75) via the wiring 70b. In this example, the transistor Sw2 is provided on the wiring 70b.

The second magnetic element SB2 includes a second magnetic layer 12, a second counter magnetic layer 12c, and a second nonmagnetic layer 12n. The second opposing magnetic layer 12c is provided between the fifth portion 21e and the second magnetic layer 12. The second nonmagnetic layer 12n is provided between the second magnetic layer 12 and the second opposing magnetic layer 12c. For example, the second opposing magnetic layer 12c contacts the fifth portion 21e. For example, the second magnetic layer 12, the second counter magnetic layer 12c, and the second nonmagnetic layer 12n have the configurations and materials of the first magnetic layer 11, the first counter magnetic layer 11c, and the first nonmagnetic layer 11n, respectively. Applied.

For example, the second switch element SC2 includes the second conductive layer 32, the second counter conductive layer 32c, and the second intermediate layer 32i. The second conductive layer 32 is electrically connected to the second terminal T2 and contains a metal. The second counter conductive layer 32c is electrically connected to the second magnetic element SB2 and contains a metal. The second intermediate layer 32i is provided between the second conductive layer 32 and the second counter conductive layer 32c. The configurations and materials of the first conductive layer 31, the first counter conductive layer 31c, and the first intermediate layer 31i are applied to the second conductive layer 32, the second counter conductive layer 32c, and the second intermediate layer 32i, respectively.

In the example illustrated in FIG. 5A, the control unit 70 performs the first selection write operation SW1 on the first memory element ME1. At this time, for example, the magnetization 11cM of the first opposing magnetic layer 11c is substantially “antiparallel” to the magnetization 11M of the first magnetic layer 11. For example, a high resistance state can be obtained.

In the example illustrated in FIG. 5B, the control unit 70 performs the second selection write operation SW2 on the first memory element ME1. At this time, the magnetization 11cM of the first opposing magnetic layer 11c is substantially “parallel” to the magnetization 11M of the first magnetic layer 11. For example, a low resistance state can be obtained.

As one example, in the initial state, the magnetization 11cM of the first opposing magnetic layer 11c is substantially “parallel” to the magnetization 11M of the first magnetic layer 11.

As shown in FIG. 5C, the control unit 70 may further perform the first non-selection operation NS1 for the first memory element ME1. In the first non-selection operation NS1, the control unit 70 applies the first non-selection voltage Vn1 to the first terminal T1 while supplying the first current I1 to the first conductive member 21. The first non-selection voltage Vn1 has the second polarity (for example, positive) or 0 volt. In this case, the magnetization 11cM of the first opposing magnetic layer 11c is substantially “parallel” to the magnetization 11M of the first magnetic layer 11. For example, the low resistance state is maintained. When the initial state is the high resistance state, the high resistance state is maintained.

As shown in FIG. 5D, the control unit 70 may further execute the second non-selection operation NS2 for the first memory element ME1. In the second non-selection operation NS2, the control unit 70 applies the second non-selection voltage Vn2 to the first terminal T1 while supplying the second current I2 to the first conductive member 21, and the second non-selection voltage Vn2 is , Second polarity (eg positive) or 0 volts. In this case, the magnetization 11cM of the first opposing magnetic layer 11c is substantially “parallel” to the magnetization 11M of the first magnetic layer 11. For example, the low resistance state is maintained. When the initial state is the high resistance state, the high resistance state is maintained.

In this way, in the first non-selection operation NS1, the control unit 70 does not change the storage state of the first storage element ME1. In the second non-selection operation NS2, the control unit 70 does not change the storage state of the first storage element ME1.

As illustrated in FIG. 5A, the control unit 70 may perform the third non-selection operation NS3 with respect to the second memory element ME2. For example, the control unit 70 may be capable of performing the third non-selection operation NS3 while the control unit 70 is performing the first selection write operation SW1. In the third non-selection operation NS3, the control unit 70 applies the third non-selection voltage Vn3 to the second terminal T2 while supplying the first current I1 to the first conductive member 21. The third non-selection voltage Vn3 has the second polarity (for example, positive) or 0 volt. For example, the initial resistance state is maintained.

As shown in FIG. 5B, the control unit 70 may perform the fourth non-selection operation NS4 for the second memory element ME2. For example, the control unit 70 may be capable of performing the fourth non-selection operation NS4 while the control unit 70 is performing the second selection write operation SW2. In the fourth non-selection operation NS4, the control unit 70 supplies the second current I2 to the first conductive member 21 and applies the fourth non-selection voltage Vn4 to the second terminal T2. The fourth non-selection voltage Vn4 has the second polarity (for example, positive) or 0 volt. For example, the initial resistance state is maintained.

As shown in FIG. 5C, the control unit 70 may be capable of performing the third selection write operation SW3 while the control unit 70 is performing the first non-selection operation NS1. In the third selection write operation SW3, the control unit 70 applies the third selection write voltage Vs3 to the second terminal T2 while supplying the first current I1 to the first conductive member 21. The third selection write voltage Vs3 has the first polarity (eg, negative). The magnetization 12cM of the second opposing magnetic layer 12c is substantially "antiparallel" to the magnetization 12M of the second magnetic layer 12. For example, a high resistance state can be obtained.

As shown in FIG. 5D, the control unit 70 may be capable of performing the fourth selection write operation SW4 while the control unit 70 is performing the second non-selection operation NS2. In the fourth selection write operation SW4, the control unit 70 applies the fourth selection write voltage Vs4 to the second terminal T2 while supplying the second current I2 to the first conductive member 21. The fourth selection write voltage Vs4 has the first polarity (eg, negative). The magnetization 12cM of the second opposing magnetic layer 12c is substantially “parallel” to the magnetization 12M of the second magnetic layer 12. For example, a low resistance state can be obtained.

In the above example, the first switch element SC1 (and the second switch element SC2) is an MIM element. These elements may be semiconductor elements.

For example, the first switch element SC1 includes the first conductive layer 31, the first counter conductive layer 31c, and the first intermediate layer 31i (see FIG. 1A). The first conductive layer 31 is electrically connected to the first terminal T1. The first counter conductive layer 31c is electrically connected to the first magnetic element SB1. The first intermediate layer 31i is provided between the first conductive layer 31 and the first counter conductive layer 31c. The first conductive layer 31 may include a semiconductor layer of the first conductivity type. The first opposing conductive layer 31c may include a semiconductor layer of the first conductivity type. The first intermediate layer 31i may include a semiconductor layer of the second conductivity type. The second conductivity type is different from the first conductivity type. For example, the first switch element SC1 may have an N/P/N structure. For example, the first switch element SC1 may have a P/N/P structure. Even with such a configuration, a characteristic having hysteresis can be obtained.

In the first embodiment, the absolute value of the first read voltage Vr1 is smaller than the absolute value of each of the first to fourth selected write voltages Vs1 to Vs4, for example.

In the embodiment, the reference potential is the potential of the first conductive member 21 (for example, the potential V0 of the first portion 21a). The reference potential may be changed in a plurality of operations. For example, the reference potential in the selective write operation (for example, the potential V0 of the first portion 21a) and the reference potential in the read operation (for example, the potential V0 of the first portion 21a) are different from each other. Is also good. For example, in one operation (for example, the first selection write operation SW1), for example, when the potential V0 of the first portion 21a is “0 volt”, the first selection write voltage Vs1 is based on “0 volt”. Is defined as For example, in another one operation (for example, the read operation RO), for example, when the potential V0 of the first portion 21a is “3 V”, the voltage of the read pulse RP1 (the first read voltage Vr1 and the first read voltage Vr1 2 lead voltage Vr2, etc.) is defined with reference to “3 volts”.

(Second embodiment)
FIG. 6 is a schematic view illustrating the magnetic memory device according to the second embodiment.
As shown in FIG. 6, the magnetic storage device 210 according to this embodiment also includes a storage unit MP and a control unit 70. The storage unit MP includes, in addition to the first conductive member 21, a plurality of storage elements ME0 and a plurality of terminals T0. The plurality of storage elements ME0 include, for example, a first storage element ME1 and a second storage element ME2. One of the plurality of storage elements ME0 includes, for example, a switch element SC0 and a magnetic element SB0. The plurality of terminals T0 include, for example, a first terminal T1 and a second terminal T2.

In this example, a transistor is provided in each of the plurality of storage elements ME0. The transistors include, for example, transistors Sw(i−1), Sw(i) and Sw(i+1). These transistors may be regarded as a part of the control unit 70.

As described above, the control unit 70 may include the first transistor and the second transistor. The first transistor corresponds to, for example, the transistor Sw(i). The second transistor corresponds to, for example, the transistor Sw(i+1).

The first transistor is provided on the first current path cp1 between the first switch element SC1 and the first terminal T1. The second transistor is provided on the second current path cp2 between the second switch element SC2 and the second terminal T2.

Selection or non-selection of the plurality of memory elements ME0 may be switched by these transistors.

As shown in FIG. 6, at least one of the transistors Sx1 and Sx2 may be provided. The transistor Sx1 is provided in the current path between the first portion 21a of the first conductive member 21 and the control unit 70. The transistor Sx2 is provided in the current path between the second portion 21b of the first conductive member 21 and the control unit 70. The supply or non-supply of at least one of the first current I1 and the second current I2 may be controlled by at least one of the transistors Sx1 and Sx2.

(Third Embodiment)
FIG. 7 is a schematic view illustrating the magnetic memory device according to the third embodiment.
As shown in FIG. 7, in the magnetic storage device 220 according to the embodiment, the storage unit MP includes, in addition to the first conductive member 21 and the first storage element ME1, the first wiring W1, the second storage element ME2, and the second storage element ME2. The conductive member 22 is further included.

In the second conductive member 22, the sixth portion 22f including the fourth portion 22d, the fifth portion 22e and the sixth portion 22f is provided between the fourth portion 22d and the fifth portion 22e.

The second memory element ME2 includes a second switch element SC2 and a second magnetic element SB2. The second magnetic element SB2 is provided between the second switch element SC2 and the sixth portion 22f. The second magnetic element SB2 is electrically connected to the sixth portion 22f.

The first memory element ME1 is provided between a part of the first wiring W1 and the third portion 21c. The second memory element ME2 is provided between another portion of the first wiring W1 and the sixth portion 22f.

In this way, the memory element may be provided in the plurality of wirings (the first wiring W1 and the second wiring W2, etc.) and the plurality of conductive members (the first conductive member 21, the second conductive member 22, etc.). .. The plurality of wirings extend along the Y-axis direction, for example. The plurality of wirings are arranged, for example, along the X-axis direction. The plurality of conductive members are along the X-axis direction, for example. The plurality of conductive members are arranged, for example, along the Y-axis direction.

For example, a cross-point type storage device can be obtained. By using the memory element including the first switch element SC1 and the like, stable read operation becomes possible. According to the embodiment, it is possible to provide a magnetic storage device capable of stable operation. By adopting the cross point type, for example, a high storage density can be obtained.

As shown in FIG. 7, the storage unit MP is provided in the first layer 18a. The magnetic storage device 220 may further include the second layer 18b. The control unit 70 is provided, for example, in the second layer 18b. The storage unit MP is electrically connected to the control unit 70 of the second layer 18b by the connection unit 17, for example. The control unit 70 may include, for example, a decoder 75D, a sense amplifier 75SA, an input/output unit 75I/D, and the like.

In the second and third embodiments, the read operation RO described in regard to the first embodiment is performed. Also in the second and third embodiments, stable read operation is possible. According to the embodiment, it is possible to provide a magnetic storage device capable of stable operation.

(Fourth Embodiment)
8A to 8C are schematic views illustrating the magnetic memory device according to the fourth embodiment.
As shown in FIG. 8A, the magnetic storage device 310 according to the embodiment includes a storage unit MP and a control unit 70.

The storage unit MP includes a first storage element ME1, a first terminal T1 and a second terminal T2. The first memory element ME1 includes a first switch element SC1 and a first magnetic element SB1. The first magnetic element SB1 is electrically connected in series with the first switch element SC1. The first terminal T1 is electrically connected to the first switch element SC1. The second terminal T2 is electrically connected to the first magnetic element SB1.

The first memory element ME1 has the same configuration as that of the first embodiment. For example, the first memory element ME1 includes a first switch element SC1 and a first magnetic element SB1. The current flowing through the first switch element SC1 has a hysteresis characteristic with respect to the voltage applied to the first switch element SC1.

The control unit 70 is electrically connected to the first terminal T1 and the second terminal T2.

In this example, the control unit 70 controls the electric resistance state of the first magnetic element SB1 by causing a current to flow between the first terminal T1 and the second terminal T2. The control is based on, for example, the spin transfer effect. The resistance state obtained differs depending on the direction of the current.

For example, the control unit 70 performs at least the first write operation, the second write operation, and the read operation.

FIG. 8A corresponds to the read operation RO. FIG. 8B corresponds to the first write operation WO1. FIG. 8C corresponds to the second write operation WO2.

As shown in FIG. 8B, in the first write operation WO1, the control unit 70 applies the first write voltage Vw1 to the first terminal T1 so as to apply the first write voltage Vw1 between the first terminal T1 and the second terminal T2. The current path cp is brought into the state of the first electric resistance. The first write voltage Vw1 has the first polarity when it is referenced to the second terminal T2.
As shown in FIG. 8C, in the second write operation WO2, the control unit 70 applies the second write voltage Vw1 to the first terminal T1 and sets the current path cp to the second electric resistance lower than the first electric resistance. Set to the state of electrical resistance. The second write voltage Vw2 has a second polarity opposite to the first polarity.

8B and 8C correspond to the case where the first polarity is negative. In this case, the current Is1 flows from the second terminal T2 to the first terminal T1 in the first write operation WO1, and the current Is2 flows from the first terminal T1 to the second terminal T2 in the second write operation WO2.

When the first polarity is positive, a current flows from the first terminal T1 to the second terminal T2 in the first write operation WO1, and a current flows from the second terminal T2 to the first terminal T1 in the second write operation WO2. Flowing

As described above, in the first write operation WO1, the first electric resistance state is formed. In the second write operation WO2, the state of the second electric resistance lower than the first electric resistance is formed.

As shown in FIG. 8A, in the read operation RO, the control unit 70 applies the read pulse RP1 to the first terminal T1 to generate the current path cp between the first terminal T1 and the second terminal T2. The value corresponding to the electric resistance is detected.

The read pulse RP1 has the configuration described with reference to FIG. The read pulse RP1 includes a first period pp1 having the first read voltage Vr1 and a second period pp2 having the second read voltage Vr2 and subsequent to the first period pp1. The absolute value of the second read voltage Vr2 is smaller than the absolute value of the first read voltage Vr1 (see FIG. 1B).

The first read voltage Vr1 and the second read voltage Vr2 have the above-mentioned first polarity. As described above, in the present embodiment, the read operation RO is performed using the read pulse RP1 having the same polarity (first polarity) as the first write voltage Vw1 applied in the first write operation WO1 that forms the high resistance state. Be seen. For example, the high resistance state is more difficult to generate than the formation of the low resistance state. By using the read pulse RP1 having the same polarity as the voltage applied in the first write operation WO1 that forms the high resistance state and including the high voltage first period pp1 and the low voltage second period pp2, the memory Stable read operation is possible while suppressing the influence on the state. According to the embodiment, it is possible to provide a magnetic storage device capable of stable operation.

In the present embodiment, the absolute value of the first read voltage Vr1 is smaller than the absolute value of each of the first write voltage Vw1 and the second write voltage Vw2, for example.

Also in the present embodiment, the read pulse RP1 may further include the third period pp3 (see FIG. 4) between the first period pp1 and the second period pp2. As described above, the rate of change of the read pulse RP1 with respect to time tm in the third period pp3 is higher than the rate of change of the read pulse RP1 with respect to time tm in the second period pp2 (see FIG. 4 ).

As described above, the first memory element ME1 has the same configuration as that of the first embodiment. For example, as shown in FIG. 8A, the first switch element SC1 is electrically connected to the first terminal T1 and is electrically connected to the first conductive layer 31 containing metal and the first magnetic element SB1. It includes a first counter conductive layer 31c containing a metal, and a first intermediate layer 31i provided between the first conductive layer 31 and the first counter conductive layer 31c. The first intermediate layer 31i includes at least one selected from the group consisting of Mg, Al, Si, Ti, V, Cu, Zn, Ge, Sr, Zr, Nb, Sb, Te, Hf, Ta and W. Contains the first element. The first intermediate layer 31i may further include at least one second element selected from the group consisting of oxygen and nitrogen. The first intermediate layer 31i includes HfO _x , for example. The first intermediate layer 31i may include GeSbTe, for example.

As described above, the first conductive layer 31 and the first counter conductive layer 31c may have the first conductivity type, and the first intermediate layer 31i may have the second conductivity type.

In this embodiment, a cross point type may be applied. In this case, in the configuration illustrated in FIG. 7, the first conductive member 21 corresponds to the second wiring and the second conductive member 22 corresponds to the third wiring. The storage unit MP includes a first wiring (first wiring W1 in FIG. 7), a second wiring (first conductive member 21 in FIG. 7), a third wiring (second conductive member 22 in FIG. 7), and It includes one memory element ME1 and a second memory element ME2.
The second memory element ME2 includes a second switch element SC1 and a second magnetic element SB2 electrically connected in series with the second switch element SC1. The first memory element ME1 is provided between a part of the first wiring W1 and a part of the second wiring (first conductive member 21 in FIG. 7). The second memory element ME2 is provided between another part of the first wiring W1 and a part of the third wiring (the conductive member 22 in FIG. 7).

(Fifth Embodiment)
FIG. 9 is a schematic view illustrating the magnetic memory device according to the fifth embodiment.
As shown in FIG. 9, the magnetic storage device 410 according to the embodiment includes a storage unit MP and a control unit 70. The storage unit MP includes a first storage element ME1. The first memory element ME1 includes a first switch element SC1 and a first magnetic element SB1 which are electrically connected to each other in series. The first memory element ME1 corresponds to one memory cell MC. In this example, the first terminal T1 is grounded. The second terminal T2 is electrically connected to the control unit 70.

The control unit 70 includes a reset circuit 42, a set circuit 43, and a read circuit 41. One end of each of these circuits is electrically connected to the second terminal T2. A non-volatile latch is obtained by the memory unit MP, the reset circuit 42, the set circuit 43, and the read circuit 41.

In the embodiment, the read circuit 41 applies, for example, the read pulse RP1 described in regard to the first embodiment to the memory cell MC. This enables a stable read operation. According to the embodiment, it is possible to provide a magnetic storage device capable of stable operation.

In the fourth and fifth embodiments, the description of the parts to which the configurations described in the first to third embodiments are applicable will be omitted.

The embodiment may include, for example, the following configurations (for example, technical solutions).
(Structure 1) (First independent term: in the case of VoCSM)
A storage unit including a first storage element, a first conductive member, and a first terminal, wherein the first conductive member is between a first portion, a second portion, and the first portion and the second portion. And a first magnetic element electrically connected in series with the first switch element, wherein the first memory element includes a third portion of the first magnetic element. Is electrically connected to the third portion, and the first terminal is electrically connected to the first switch element;
A controller electrically connected to the first terminal and the first conductive member;
Equipped with
The control unit performs at least a first selection write operation and a read operation,
In the first selective write operation, the controller supplies a first current from the first portion to the second portion to the first conductive member,
In the read operation, the control unit applies a read pulse between the first conductive member and the first terminal to correspond to an electric resistance of a current path including the first conductive member and the first terminal. Find the value,
The read pulse includes a first period having a first read voltage, a second period having a second read voltage and a second period after the first period, and an absolute value of the second read voltage is the second period. A magnetic storage device that is smaller than the absolute value of one read voltage.

(Configuration 2)
In the first selective write operation, the control unit supplies the first current from the first portion to the second portion to the first conductive member, and controls the first conductive member based on the first conductive member. Applying a polarity first selection write voltage to the first terminal,
The magnetic storage device according to configuration 1, wherein the first read voltage and the second read voltage have a second polarity that is opposite to the first polarity.

(Structure 3)
The control unit further performs a first non-selection operation,
In the first non-selection operation, the controller applies the first non-selection voltage of the second polarity or 0 volt to the first terminal while supplying the first current to the first conductive member. A magnetic storage device according to configuration 2.

(Structure 4)
The control unit further performs a second selection write operation,
In the second selective write operation, the control unit supplies the second current from the second portion to the first portion to the first conductive member while applying the second selective write voltage having the first polarity. The magnetic storage device according to configuration 2 or 3, wherein the magnetic storage device is applied to the first terminal.

(Structure 5)
The control unit further performs a second non-selection operation,
In the second non-selection operation, the controller applies the second non-selection voltage of the second polarity or 0 volt to the first terminal while supplying the second current to the first conductive member. A magnetic storage device according to configuration 4.

(Structure 6)
In the first selective write operation, the control unit sets the first storage element to one of the first storage state and the second storage state,
6. The magnetic storage device according to configuration 5, wherein in the second selective write operation, the control unit sets the first storage element to the other of the first storage state and the second storage state.

(Structure 7)
In the first non-selection operation, the control unit does not change the storage state of the first storage element,
7. The magnetic storage device according to configuration 5 or 6, wherein in the second non-selection operation, the control unit does not change the storage state of the first storage element.

(Structure 8)
The read pulse further includes a third period between the first period and the second period,
8. The magnetic storage device according to any one of configurations 1 to 7, wherein a rate of change of the read pulse with respect to time in the third period is higher than a rate of change of the read pulse with respect to time in the second period.

(Configuration 9)
The magnetic storage device according to any one of configurations 1 to 8, wherein the current flowing through the first switch element has a hysteresis characteristic with respect to a voltage applied to the first switch element.

(Configuration 10)
The first switch element includes a first conductive layer electrically connected to the first terminal and including a metal, a first counter conductive layer electrically connected to the first magnetic element and including a metal, and A first intermediate layer provided between a conductive layer and the first opposing conductive layer,
The first intermediate layer includes at least one selected from the group consisting of Mg, Al, Si, Ti, V, Cu, Zn, Ge, Sr, Zr, Nb, Sb, Te, Hf, Ta and W. The magnetic storage device according to any one of configurations 1 to 9, which includes a first element.

(Configuration 11)
11. The magnetic memory device according to configuration 10, wherein the first intermediate layer further contains at least one second element selected from the group consisting of oxygen and nitrogen.

(Configuration 12)
The first switch element includes a first conductive type first conductive layer electrically connected to the first terminal, and a first conductive type first opposing layer electrically connected to the first magnetic element. Any one of Configurations 1 to 9 including a conductive layer and a first intermediate layer of a second conductivity type that is provided between the first conductive layer and the first opposing conductive layer and is different from the first conductivity type. 2. The magnetic storage device according to one of the above.

(Configuration 13)
The first magnetic element includes a first magnetic layer, a first counter magnetic layer provided between the third portion and the first magnetic layer, the first magnetic layer and the first counter magnetic layer. 13. A magnetic memory device according to any one of configurations 1 to 12, further comprising:

(Configuration 14)
The storage unit further includes a second storage element and a second terminal,
The first conductive member further includes a fourth portion and a fifth portion, the second portion is provided between the first portion and the fourth portion, and the second portion and the fourth portion are provided. The fifth portion is provided between
The second memory element includes a second switch element and a second magnetic element electrically connected in series with the second switch element, and the second magnetic element electrically connects to the fifth portion. And the second terminal is electrically connected to the second switch element,
When the control unit is performing the first selection write operation, the control unit can perform the third non-selection operation,
In the third non-selection operation, the controller applies the third non-selection voltage of the second polarity or 0 volt to the second terminal while supplying the first current to the first conductive member. The magnetic storage device according to any one of configurations 5 to 7.

(Structure 15)
When the control unit is performing the second selection write operation, the control unit can perform the fourth non-selection operation,
In the fourth non-selection operation, the controller applies the second current or the fourth non-selection voltage of 0 volt to the second terminal while supplying the second current to the first conductive member. 15. The magnetic storage device according to structure 14.

(Configuration 16)
The storage unit further includes the first transistor and a second transistor,
The first transistor is provided in a first current path between the first switch element and the first terminal,
16. The magnetic memory device according to configuration 14 or 15, wherein the second transistor is provided in a second current path between the second switch element and the second terminal.

(Configuration 17)
The storage unit further includes a first wiring, a second storage element, and a second conductive member,
The second conductive member includes a fourth portion, a fifth portion, and a sixth portion between the fourth portion and the fifth portion,
The second memory element includes a second switch element and a second magnetic element provided between the second switch element and the sixth portion, and the second magnetic element is the sixth portion. Electrically connected,
The first memory element is provided between a part of the first wiring and the third part,
16. The magnetic storage device according to any one of configurations 1 to 15, wherein the second storage element is provided between another portion of the first wiring and the sixth portion.

(Structure 18)
A storage unit including a first storage element, a first terminal, and a second terminal, wherein the first storage element is a first switch element and a first magnetic element electrically connected in series with the first switch element. An element, the first terminal is electrically connected to the first switch element, the second terminal is electrically connected to the first magnetic element, the storage unit,
A controller electrically connected to the first terminal and the second terminal;
Equipped with
The control unit performs at least a first write operation, a second write operation, and a read operation,
In the first write operation, the control unit applies a first write voltage having a first polarity to the first terminal when the second terminal is used as a reference, and connects the first terminal and the second terminal with each other. The current path between them to the state of the first electrical resistance,
In the second write operation, the controller applies a second write voltage having a second polarity opposite to the first polarity to the first terminal to cause the current path to be lower than the first electric resistance. 2 In the state of electrical resistance,
In the read operation, the control unit applies a read pulse to the first terminal to detect a value corresponding to the electric resistance of the current path,
The read pulse includes a first period having a first read voltage, a second period having a second read voltage and a second period after the first period, and an absolute value of the second read voltage is the second period. Less than the absolute value of 1 read voltage,
The magnetic storage device, wherein the first read voltage and the second read voltage have the first polarity.

(Structure 19)
The read pulse further includes a third period between the first period and the second period,
19. The magnetic memory device according to configuration 18, wherein a rate of change of the read pulse with respect to time in the third period is higher than a rate of change of the read pulse with respect to time in the second period.

(Configuration 20)
19. The magnetic memory device according to configuration 17 or 18, wherein the current flowing through the first switch element has a hysteresis characteristic with respect to the voltage applied to the first switch element.

(Configuration 21)
The first switch element includes a first conductive layer electrically connected to the first terminal and including a metal, a first counter conductive layer electrically connected to the first magnetic element and including a metal, and A first intermediate layer provided between a conductive layer and the first opposing conductive layer,
The first intermediate layer includes at least one selected from the group consisting of Mg, Al, Si, Ti, V, Cu, Zn, Ge, Sr, Zr, Nb, Sb, Te, Hf, Ta and W. 21. The magnetic memory device according to any one of Configurations 18 to 20, including the first element.

(Configuration 22)
22. The magnetic memory device according to configuration 21, wherein the first intermediate layer further includes at least one second element selected from the group consisting of oxygen and nitrogen.

(Structure 23)
The first switch element includes a first conductive type first conductive layer electrically connected to the first terminal, and a first conductive type first opposing layer electrically connected to the first magnetic element. Any one of configurations 18 to 21 including a conductive layer and a first intermediate layer of a second conductivity type provided between the first conductive layer and the first opposing conductive layer and different from the first conductivity type. 2. The magnetic storage device according to one of the above.

(Configuration 24)
The storage unit further includes a first wiring, a second wiring, a third wiring, and a second storage element,
The second memory element includes a second switch element and a second magnetic element electrically connected in series with the second switch element,
The first memory element is provided between a part of the first wiring and a part of the second wiring,
The magnetic storage device according to any one of configurations 18 to 23, wherein the second storage element is provided between another part of the first wiring and a part of the third wiring.

According to the embodiment, it is possible to provide a magnetic storage device capable of stable operation.

In the specification of the application, "vertical" and "parallel" include not only strict vertical and strict parallel but also, for example, variations in manufacturing process, and may be substantially vertical and substantially parallel. ..

The embodiments of the present invention have been described above with reference to the examples. However, the invention is not limited to these examples. For example, the specific configuration of each element such as a storage unit, a control unit, a conductive member, a magnetic layer, a non-magnetic layer, a switch element, and a wiring included in the magnetic storage device is appropriately selected by a person skilled in the art from a known range. As a result, the present invention can be carried out in the same manner, and as long as the same effect can be obtained, it is included in the scope of the present invention.

Any combination of two or more elements of each example within the technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

Based on the magnetic storage device described above as an embodiment of the present invention, all magnetic storage devices that can be appropriately modified and implemented by those skilled in the art also belong to the scope of the present invention as long as they include the gist of the present invention. ..

It is understood that those skilled in the art can come up with various modifications and modifications within the scope of the concept of the present invention, and these modifications and modifications also belong to the scope of the present invention.

Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the invention described in the claims and the scope of equivalents thereof.

11, 12... First and second magnetic layers, 11M, 12M... Magnetization, 11c, 12c... First and second opposing magnetic layers, 11cM, 12cM... Magnetization, 11n, 12n... First and second non-magnetic layers, 17... Connection part, 18a, 18b... 1st, 2nd layer, 21, 22... 1st, 2nd conductive member, 21a-21e... 1st-5th part, 22d-22f... 4th-6th part, 31, 32... First and second conductive layers, 31c, 32c... First and second opposing conductive layers, 31i, 32i... First and second intermediate layers, 41... Read circuit, 42... Reset circuit, 43... Set Circuit, 70... Control part, 70a, 70b, 70e, 70f... Wiring, 75... Drive circuit, 75D... Decoder, 75I/D... Input/output part, 75SA... Sense amplifier, .DELTA.V... Voltage, 110, 210, 220, 310 , 410... Magnetic storage device, I... Current, I1, I2... First and second current, Is1, Is2... Current, MC... Memory cell, ME0... Storage element, ME1, ME2... First and second storage element, MP... Storage unit, NS1 to NS4... First to fourth non-selection operation, RO... Read operation, RP1... Read pulse, SB0... Magnetic element, SB1, SB2... First and second magnetic element, SC0... Switch element, SC1, SC2... First and second switch elements, SW1 to SW4... First to fourth selective write operations, Sw1, Sw2, Sw(i-1), Sw(i), Sw(i+1), Sx1, Sx2... Transistor, T0... Terminal, T1, T2... First, Second Terminal, Tc1, Tc2... First, Second Conductive Terminal, V0 Potential, Va... Voltage, Vn1 to Vn4... First to Fourth Non-Selection Voltage, Vr1 , Vr2... First and second read voltages, Vs1 to Vs4... First to fourth selected write voltages, Vw1, Vw2... First and second write voltages, W1, W2... First and second wirings, WO1, WO2 ... first and second write operations, cp... current path, cp1, cp2... first and second current paths, pp1 to pp3... first to third periods, pt1 to pt3... state, tm... time

Claims (12)

A storage unit including a first storage element, a first conductive member, and a first terminal, wherein the first conductive member is between a first portion, a second portion, and the first portion and the second portion. And a first magnetic element electrically connected in series with the first switch element, wherein the first memory element includes a third portion of the first magnetic element. Is electrically connected to the third portion, and the first terminal is electrically connected to the first switch element;
A controller electrically connected to the first terminal and the first conductive member;
Equipped with
The control unit performs at least a first selection write operation and a read operation,
In the first selective write operation, the controller supplies a first current from the first portion to the second portion to the first conductive member,
In the read operation, the control unit applies a read pulse between the first conductive member and the first terminal to correspond to an electric resistance of a current path including the first conductive member and the first terminal. Find the value,
The read pulse includes a first period having a first read voltage, a second period having a second read voltage and a second period after the first period, and an absolute value of the second read voltage is the second period. A magnetic storage device that is smaller than the absolute value of one read voltage. In the first selective write operation, the control unit supplies the first current from the first portion to the second portion to the first conductive member, and controls the first conductive member based on the first conductive member. Applying a polarity first selection write voltage to the first terminal,
The magnetic storage device according to claim 1, wherein the first read voltage and the second read voltage have a second polarity opposite to the first polarity. The control unit further performs a first non-selection operation,
In the first non-selection operation, the controller applies the first non-selection voltage of the second polarity or 0 volt to the first terminal while supplying the first current to the first conductive member. The magnetic storage device according to claim 2. The control unit further performs a second selection write operation,
In the second selective write operation, the control unit supplies the second current from the second portion to the first portion to the first conductive member while applying the second selective write voltage having the first polarity. The magnetic storage device according to claim 2, wherein the magnetic storage device is applied to the first terminal. The control unit further performs a second non-selection operation,
In the second non-selection operation, the controller applies the second non-selection voltage of the second polarity or 0 volt to the first terminal while supplying the second current to the first conductive member. The magnetic storage device according to claim 4. The read pulse further includes a third period between the first period and the second period,
The magnetic storage device according to claim 1, wherein a change rate of the read pulse with respect to time in the third period is higher than a change rate of the read pulse with respect to time in the second period. The magnetic memory device according to claim 1, wherein the current flowing through the first switch element has a hysteresis characteristic with respect to a voltage applied to the first switch element. The first switch element includes a first conductive layer electrically connected to the first terminal and including a metal, a first counter conductive layer electrically connected to the first magnetic element and including a metal, and A first intermediate layer provided between a conductive layer and the first opposing conductive layer,
The first intermediate layer includes at least one selected from the group consisting of Mg, Al, Si, Ti, V, Cu, Zn, Ge, Sr, Zr, Nb, Sb, Te, Hf, Ta and W. The magnetic memory device according to claim 1, further comprising a first element. 9. The magnetic storage device according to claim 8, wherein the first intermediate layer further includes at least one second element selected from the group consisting of oxygen and nitrogen. A storage unit including a first storage element, a first terminal, and a second terminal, wherein the first storage element is a first switch element and a first magnetic element electrically connected in series with the first switch element. An element, the first terminal is electrically connected to the first switch element, the second terminal is electrically connected to the first magnetic element, the storage unit,
A controller electrically connected to the first terminal and the second terminal;
Equipped with
The control unit performs at least a first write operation, a second write operation, and a read operation,
In the first write operation, the control unit applies a first write voltage having a first polarity to the first terminal when the second terminal is used as a reference, and connects the first terminal and the second terminal with each other. The current path between them to the state of the first electrical resistance,
In the second write operation, the controller applies a second write voltage having a second polarity opposite to the first polarity to the first terminal to cause the current path to be lower than the first electric resistance. 2 In the state of electrical resistance,
In the read operation, the control unit applies a read pulse to the first terminal to detect a value corresponding to the electric resistance of the current path,
The read pulse includes a first period having a first read voltage, a second period having a second read voltage and a second period after the first period, and an absolute value of the second read voltage is the second period. Less than the absolute value of 1 read voltage,
The magnetic storage device, wherein the first read voltage and the second read voltage have the first polarity. The read pulse further includes a third period between the first period and the second period,
11. The magnetic storage device according to claim 10, wherein a rate of change of the read pulse with respect to time in the third period is higher than a rate of change of the read pulse with respect to time in the second period. The magnetic memory device according to claim 10, wherein the current flowing through the first switch element has a hysteresis characteristic with respect to a voltage applied to the first switch element.

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