JP2020105568A - Film deposition apparatus, film deposition method, and method of manufacturing electronic device - Google Patents

Abstract

To provide a technique for suppressing the deterioration of quality of sputtering due to uneven gas pressure even when the sputtering is carried out while a sputtering area is moved within a chamber.SOLUTION: A film deposition apparatus 1 has a chamber 10 within which a film deposition object 6 and a target 2 are disposed, movement means which moves, within the chamber 10, a sputtering area A1 in which sputter particles are generated from the target 2, a plurality of exhaust ports 5a-5d provided in the chamber 10, and exhaust amount adjust means which adjusts an exhaust amount from each of the plurality of exhaust ports 5a-5d, and deposits a film by depositing the sputter particles on the film deposition object 6 while moving the sputtering area A1 by the movement means. The exhaust amount adjust means adjusts the exhaust amount from each of the plurality of exhaust ports 5a-5d according to a position of the sputtering area A1 within the chamber 10.SELECTED DRAWING: Figure 1

Description

The present invention relates to a film forming apparatus, a film forming method, and an electronic device manufacturing method.

A sputtering method is widely known as a method of forming a thin film made of a material such as a metal or a metal oxide on a film formation target such as a substrate or a laminated body formed on the substrate. A film forming apparatus for forming a film by a sputtering method has a structure in which a target made of a film forming material and an object to be formed are arranged to face each other in a vacuum chamber. When a voltage is applied to the target, plasma is generated in the vicinity of the target, and the ionized inert gas element collides with the target surface to emit sputtered particles from the target surface, and the emitted sputtered particles are deposited on the film formation target. Then, a film is formed. Also known is a magnetron sputtering method in which a magnet is arranged on the back surface of the target (inside the target in the case of a cylindrical target) and the generated magnetic field increases the electron density in the vicinity of the cathode for efficient sputtering. There is.

As a conventional film forming apparatus of this type, for example, one described in Patent Document 1 is known. The film forming apparatus of Patent Document 1 moves a target in parallel with respect to a film forming surface of an object to be formed to form a film.

JP, 2015-172240, A

Here, the gas pressure may differ depending on the position in the chamber of the film forming apparatus. That is, there is a case where the pressure distribution in the chamber becomes non-uniform such that the pressure is high near the gas introduction port for introducing the sputtering gas and low near the exhaust port connected to the vacuum pump. Here, when sputtering is performed while moving the cathode in the chamber as in Patent Document 1, the sputtering region where sputtered particles are emitted from the surface of the target also moves with respect to the chamber. Therefore, under non-uniform pressure distribution, the pressure around the sputtering region changes during the sputtering process. The mean free path of sputtered particles is inversely proportional to the pressure and is long in the region where the molecular density is low and the pressure is low, and is short in the region where the molecular density is high and the pressure is high, so that the film formation rate changes when the pressure is different. As a result, the quality of film formation may deteriorate (for example, unevenness in film thickness or film quality). However, Patent Document 1 does not describe the film formation control according to the difference in the pressure of the sputtering gas in the chamber.

The present invention has been made in view of the above problems, and an object thereof is to suppress the deterioration of the quality of sputtering due to nonuniform gas pressure when performing sputtering while moving the sputtering region in the chamber. To provide.

The present invention employs the following configurations. That is,
A chamber in which the film formation target and the target are arranged,
Moving means for moving a sputtering area for generating sputtered particles from the target in the chamber;
A plurality of exhaust ports provided in the chamber,
Exhaust amount adjusting means for adjusting the exhaust amount from each of the plurality of exhaust ports,
Have
A film forming apparatus for forming a film by depositing the sputtered particles on the film formation target while moving the sputtering region by the moving means,
In the film forming apparatus, the exhaust amount adjusting means adjusts the exhaust amount from each of the plurality of exhaust ports according to the position of the sputtering region in the chamber.

The present invention also employs the following configurations. That is,
A chamber in which the film formation target and the target are arranged,
Moving means for moving a sputtering area for generating sputtered particles from the target in the chamber;
A plurality of exhaust ports provided in the chamber,
Exhaust amount adjusting means for adjusting the exhaust amount from each of the plurality of exhaust ports,
Have
In the film forming apparatus, the moving unit moves the sputtering region to deposit the sputtered particles on the film formation target to form a film.

The present invention also employs the following configurations. That is,
A film forming method using a chamber in which an object to be film-formed and a target are arranged inside and a plurality of exhaust ports are provided,
A step of depositing the sputtered particles on the film-forming target to form a film while moving a sputtering region for generating sputtered particles from the target in the chamber;
Adjusting the amount of exhaust from each of the plurality of exhaust ports,
Including
In the adjusting step, the exhaust amount from each of the plurality of exhaust ports is adjusted according to the position of the sputtering region in the chamber.

The present invention also employs the following configurations. That is,
A method of manufacturing an electronic device, comprising:
A step of arranging a film-forming target and a target facing the film-forming target in a chamber provided with a plurality of exhaust ports;
A step of depositing the sputtered particles on the film-forming target to form a film while moving a sputtering region for generating sputtered particles from the target in the chamber;
Adjusting the amount of exhaust from each of the plurality of exhaust ports,
Including
In the adjusting step, the exhaust amount from each of the plurality of exhaust ports is adjusted according to the position of the sputtering region in the chamber.

According to the present invention, it is possible to provide a technique for suppressing deterioration of sputtering quality due to nonuniform gas pressure when performing sputtering while moving the sputtering region in the chamber.

3 is a schematic diagram showing the configuration of the film forming apparatus of Embodiment 1. FIG. FIG. 6A is a view of the film forming apparatus of Embodiment 1 seen from another angle, and FIG. 9B is a perspective view showing the configuration of a magnet unit. 3 is a chart illustrating valve opening control according to the first embodiment. 3 is a schematic diagram showing the configuration of a film forming apparatus of Embodiment 2. FIG. 9 is a flowchart showing control of the second embodiment. 6 is a schematic diagram showing the configuration of a film forming apparatus according to Embodiment 3. FIG. 6 is a schematic diagram showing the configuration of a film forming apparatus of Embodiment 4. FIG. FIG. 9 is a schematic diagram showing the configuration of a film forming apparatus according to a sixth embodiment. FIG. 9 is a schematic diagram showing the configuration of a film forming apparatus of Embodiment 7. FIG. 9 is a schematic diagram showing the configuration of a magnet unit of Embodiment 7. The schematic diagram which shows the structure of the film-forming apparatus of Embodiment 8. The figure which shows the general layer structure of an organic EL element.

Hereinafter, embodiments of the present invention will be described in detail. However, the following embodiments merely exemplify the preferable configurations of the present invention, and the scope of the present invention is not limited to those configurations. Further, in the following description, the hardware configuration and software configuration of the device, the processing flow, the manufacturing conditions, the dimensions, the material, the shape, etc., limit the scope of the present invention to them unless otherwise specified. It isn't meant.

INDUSTRIAL APPLICABILITY The present invention is suitable for forming a thin film, particularly an inorganic film, on a film-forming target such as a substrate. The present invention can also be understood as a film forming apparatus, a control method thereof, and a film forming method. The present invention can also be understood as an electronic device manufacturing apparatus or an electronic device manufacturing method. The present invention can also be understood as a program that causes a computer to execute the control method and a storage medium that stores the program. The storage medium may be a computer-readable non-transitory storage medium.

[Embodiment 1]
A basic configuration of the film forming apparatus 1 according to the first embodiment will be described with reference to the drawings. The film forming apparatus 1 deposits and forms a thin film on a substrate (including a laminated body formed on a substrate) in the production of various electronic devices such as semiconductor devices, magnetic devices, electronic components, and optical components. Used for. More specifically, the film forming apparatus 1 is preferably used in manufacturing electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Among them, the film forming apparatus 1 according to the present embodiment is particularly preferably used for manufacturing an organic light emitting element such as an organic EL (Electro Luminescence) element, or an organic photoelectric conversion element such as an organic thin film solar cell. The electronic device in the present invention also includes a display device (for example, an organic EL display device) including a light emitting element, a lighting device (for example, an organic EL lighting device), and a sensor (for example, an organic CMOS image sensor) including a photoelectric conversion element.

FIG. 12 schematically shows a general layer structure of an organic EL element. In a general organic EL device shown in FIG. 12, an anode 601, a hole injection layer 602, a hole transport layer 603, an organic light emitting layer 604, an electron transport layer 605, an electron injection layer 606 are provided on a substrate (film formation target 6). The cathode 607 is formed in this order. The film forming apparatus 1 according to the present embodiment is suitably used when forming a laminated coating film of a metal or a metal oxide used for an electron injection layer or an electrode (cathode) on an organic film by sputtering. Further, the film formation is not limited to the organic film formation, and a stacked film formation can be performed on various surfaces as long as it is a combination of materials such as a metal material and an oxide material that can be formed by sputtering. Furthermore, the present invention is not limited to the film formation using a metal material or an oxide material, and can be applied to the film formation using an organic material. By using a mask having a desired mask pattern at the time of film formation, each layer to be formed can be arbitrarily configured.

FIG. 1 is a schematic diagram showing the configuration of the film forming apparatus 1 of this embodiment. The film forming apparatus 1 can accommodate a film forming object 6 such as a substrate therein. The film forming apparatus 1 includes a chamber 10 in which a target 2 is arranged, and a magnet unit 3 arranged in the chamber 10 at a position facing the film formation target 6 through the target 2. There is. In this embodiment, the target 2 has a cylindrical shape and, together with the magnet unit 3 arranged inside, forms a rotating cathode unit 8 that functions as a film forming source. The term "cylindrical" used here does not mean only a mathematically strict cylindrical shape, but a generatrix in which the generatrix is a curve rather than a straight line, and a cross section perpendicular to the central axis is mathematically strict. Including those that are not "yen". That is, the target 2 in the present invention may have a substantially cylindrical shape that is rotatable about the central axis.

Before the film formation, the film formation target 6 is aligned with the mask 6b and held by the holder 6a. The holder 6a may be provided with an electrostatic chuck for attracting and holding the film-forming target 6 by electrostatic force, or may be provided with a clamp mechanism for sandwiching the film-forming target 6. Further, the holder 6a may include a magnet plate for attracting the mask 6b from the back surface of the film formation target 6. In the film forming process, the target 2 of the rotary cathode unit 8 moves in the direction orthogonal to the rotation center axis while rotating around the rotation center axis. On the other hand, unlike the target 2, the magnet unit 3 does not rotate, and always generates a leakage magnetic field on the surface side of the target 2 facing the film formation target 6 to increase the electron density in the vicinity of the target 2 for sputtering. The region where the leakage magnetic field is generated is the sputtering region A1 where sputtered particles are generated. The sputtering area A1 of the target 2 moves with respect to the chamber 10 along with the movement of the rotary cathode unit 8, so that film formation is sequentially performed on the entire film formation target 6. Although the magnet unit 3 is not rotated here, the present invention is not limited to this, and the magnet unit 3 may also be rotated or swung.

The film-forming target 6 held by the holder 6a is horizontally arranged on the ceiling wall 10d side of the chamber 10. The film formation target 6 is carried in, for example, from one gate valve 17 provided on the side wall of the chamber 10 to form a film, and after the film formation, is carried out from a gate valve 18 provided on the other side wall of the chamber 10. It In the figure, the configuration of the deposition is shown in which the film formation is performed with the film formation surface of the film formation target 6 facing downward in the direction of gravity. However, the film-forming target 6 is arranged on the bottom surface side of the chamber 10 and the rotating cathode unit 8 is arranged above the chamber 10, and the film-forming target 6 is formed with the film-forming surface facing upward in the direction of gravity. The depot down configuration may be used. Alternatively, the film formation may be performed in a state in which the film formation target 6 is set upright (that is, the film formation surface of the film formation target 6 is parallel to the gravity direction). Further, the film formation target 6 may be carried into the chamber 10 from either one of the gate valves 17 and 18 to form a film, and after the film formation, the film formation target 6 may be carried out from the gate valve that has passed when carrying in.

In this embodiment, the inlets 41 and 42 connected to the gas introducing means 16 (described later) are arranged at both ends of the chamber 10 in the X-axis direction, and the exhaust ports connected to the exhaust means 15 (described later) are arranged in the center. 5 are arranged. A guide rail 250 extending in the X-axis direction is arranged at a low position in the chamber. The rotating cathode unit 8 moves along the guide rail 250 between one end (the side closer to the inlet 41) and the other end (the side closer to the inlet 42) in the X-axis direction.
FIG. 2A is a side view of the film forming apparatus 1 viewed from another direction. The rotary cathode unit 8 is supported by a support block 210 and end blocks 220, both ends of which are fixed on a moving table 230. The cylindrical target 2 of the rotating cathode unit 8 is rotatable, and the magnet unit 3 therein is supported in a fixed state.

The moving table 230 is movably supported along a pair of guide rails 250 via a transfer guide 240 such as a linear bearing. The rotating shaft N of the rotating cathode unit 8 is in a state of extending in the Y-axis direction. In the film forming process, the rotating cathode unit 8 moves along the guide rail 250 in the moving region facing the film formation target 6 while rotating about the rotation axis N (white arrow in FIG. 1 ). The moving region of the present embodiment has a substantially planar shape in which one side is substantially equal to the width of the rotating cathode unit 8 and the other side intersecting the one side is substantially equal to the length of the guide rail 250.

The target 2 is rotationally driven by a target driving device 11 that is a rotating unit. As the target drive device 11, a general drive mechanism having a drive source such as a motor and transmitting power to the target 2 via a power transmission mechanism can be used. The target driving device 11 may be mounted on the support block 210 or the end block 220.

The carriage 230 is driven by the carriage drive device 12 along the guide rail 250. As the moving table drive device 12, various known movement mechanisms such as a screw feed mechanism using a ball screw or the like for converting the rotational movement of the rotation motor into a driving force, a linear motor, or the like can be used. The moving table drive device 12 of the illustrated example moves the target in the lateral direction (X-axis direction) intersecting the longitudinal direction (Y-axis direction) of the target. As illustrated, the deposition preventing plates 261 and 262 may be provided before and after the moving table 230 in the target moving direction. It may be considered that the moving table driving device 12 is a moving means, or that the moving table driving device 12, the guide rail 250 and the moving table 230 are included in the moving means. The control unit 14 can detect information regarding the position, moving direction, and moving speed of the rotating cathode unit 8 in the chamber by using an encoder or the like.

The target 2 functions as a supply source of a film forming material for forming a film on the film forming target 6. Examples of the material of the target 2 include simple metals such as Cu, Al, Ti, Mo, Cr, Ag, Au, and Ni, or alloys or compounds containing those metal elements. Alternatively, it may be a transparent conductive oxide such as ITO, IZO, IWO, AZO, GZO, and IGZO. A layer of the backing tube 2a made of another material is formed inside the layer in which these film forming materials are formed. A power supply 13 is connected to the backing tube 2a via a target holder (not shown). At this time, the target holder (not shown) and the backing tube 2a function as a cathode that applies a bias voltage (for example, a negative voltage) applied from the power source 13 to the target 2. However, the bias voltage may be applied to the target itself without providing the backing tube. The chamber 10 is grounded.

The magnet unit 3 forms a magnetic field in the direction toward the film formation target 6. As shown in FIG. 2B, the magnet unit 3 includes a central magnet 31 extending in a direction parallel to the rotation axis of the rotary cathode unit 8, and a peripheral magnet 32 having a different polarity from the central magnet 31 surrounding the central magnet 31. And a yoke plate 33. It can be said that the central magnet 31 extends in a direction intersecting the moving direction of the cathode unit 8. The peripheral magnet 32 is composed of a pair of linear portions 32a and 32b extending parallel to the central magnet 31, and turning portions 32c and 32d connecting both ends of the linear portions 32a and 32b. The magnetic field formed by the magnet unit 3 has a magnetic field line that returns from the magnetic pole of the central magnet 31 toward the linear portions 32 a and 32 b of the peripheral magnet 32 in a loop shape. As a result, a toroidal magnetic field tunnel extending in the longitudinal direction of the target 2 is formed near the surface of the target 2. Electrons are captured by this magnetic field, plasma is concentrated near the surface of the target 2, and the efficiency of sputtering is improved. The region of the surface of the target 2 where the magnetic field of the magnet unit leaks is the sputtering region A1 where sputtered particles are generated. The gas pressure in the vicinity of the sputtering area A1 affects the flight distance of particles. Note that the range in the vicinity of the sputtering area A1 is not necessarily limited by the distance, but is appropriately defined according to the influence on the required film formation accuracy.

A gas introduction unit 16 and an exhaust unit 15 are connected to the chamber 10. The gas introduction unit 16 and the exhaust unit 15 introduce and exhaust the sputtering gas, so that the pressure inside the chamber is maintained. The sputtering gas is, for example, an inert gas such as argon or a rare gas, or a reactive gas such as oxygen, nitrogen, or water (steam). The gas introducing means 16 of the present embodiment is
Sputter gas is introduced through inlets 41 and 42 provided on both sides of the chamber 10. The exhaust means 15 such as a vacuum pump exhausts the inside of the chamber 10 to the outside through the exhaust port 5 (four exhaust ports 5a to 5d in this figure).

The gas introducing means 16 is composed of a supply source such as a gas cylinder, a pipe system connecting the supply source and the inlets 41 and 42, various vacuum valves provided in the pipe system, a mass flow controller, and the like. The gas introduction unit 16 can adjust the gas introduction amount by a flow rate control valve of the mass flow controller. The flow control valve has an electrically controllable structure such as an electromagnetic valve. The positions at which the inlets 41, 42 are arranged are not limited to the both side walls of the chamber, and may be one side wall, a bottom wall or a ceiling wall. Further, the pipe may extend into the chamber and the introduction port may open in the chamber 10. Further, a plurality of inlets 41, 42 of each side wall may be arranged in the longitudinal direction (Y-axis direction) of the target 2.

The exhaust means 15 of this embodiment is a vacuum pump. Further, the exhaust unit 15 may include a piping system that connects the vacuum pump and the exhaust ports 5a to 5d. The exhaust unit 15 is connected to the exhaust ports 5a to 5d via the valves 55a to 55d and the piping system. The valves 55a to 55d are flow rate control means for controlling the exhaust amount, and the exhaust amount can be adjusted according to the opening degree. A valve as shown in the figure is suitable as the flow rate control means, and a conductance valve capable of adjusting the exhaust speed by changing the opening degree in accordance with electrical control by the control unit 14 is particularly preferable. The plurality of exhaust ports 5a to 5d are installed on the bottom wall 10c of the chamber at substantially equal intervals. The location of the exhaust port is not limited to the bottom wall, and may be a side wall or a ceiling wall. Further, the pipe may extend into the chamber and the exhaust port may open in the chamber 10.

The control unit 14 stores position information of each of the plurality of exhaust ports 5a to 5d and information about the valves 55a to 55d corresponding to each exhaust port in a memory or the like. Then, different exhaust control can be performed depending on the position inside the chamber. Specifically, for example, the exhaust capacity of each of the plurality of exhaust ports can be controlled by adjusting the opening degree of a valve corresponding to the exhaust port. As the control unit 14, it is possible to use a control circuit or an information processing device which has a calculation resource such as a CPU and a memory and operates according to a program or a user's instruction. It may be considered that the control unit 14 is an exhaust amount adjusting means for adjusting the exhaust amount from each exhaust port in the present invention.

The operation of the film forming apparatus 1 will be described. In the film forming process (sputtering process), the control unit 14 drives the target driving device 11 to rotate the target 2 and applies a bias voltage from the power supply 13. When a bias potential is applied, plasma is concentrated and generated by the magnet unit 3 in the vicinity of the surface of the target 2 facing the film formation target 6, and gas ions in a positive ion state in the plasma sputter the target 2. The scattered sputtered particles are deposited on the film-forming target 6.
The controller 14 also drives the moving base driving device 12 to move the rotating cathode unit 8 from the start end to the end of the moving region at a predetermined speed. As the rotary cathode unit 8 moves in the moving region, sputtered particles are sequentially deposited on the film formation target from the upstream side to the downstream side in the moving direction.

FIG. 3 is a timing chart showing how the exhaust means 15 is controlled when a film is formed while moving the target in this embodiment. In the illustrated example, the rotary cathode unit 8 moves from left to right on the paper surface. The target position x indicated by reference numeral (5) indicates the position in the x-axis direction of the target 2 provided in the rotating cathode unit 8 inside the chamber. In the figure, the coordinate at the start of movement of the left end (at the start of film formation) is x1, and the coordinate at the end of movement at the right end in the figure (at the end of film formation) is x9. Reference numerals (1) to (4) are charts of changes in the opening degrees of the valves 55a to 55d, respectively, and show the relationship between the target position x and the valve opening degree. That is, the figure shows the valve opening determined according to the positional relationship between the target and the exhaust port (particularly the distance).

To simplify the explanation, the movement of the rotating cathode unit 8 is assumed to be a uniform linear motion. Therefore, the target position x in this timing chart corresponds to the elapsed time t after the start of film formation. However, even when the rotary cathode unit 8 is not moved in a uniform linear motion, the exhaust control according to the target position as in the present embodiment can be executed.

The control unit 14 acquires information about the current position, the moving direction, and the moving speed of the rotary cathode unit 8 in which the target 2 is arranged by using an encoder or the like. Then, control is performed so that the opening degree of the valve corresponding to the exhaust port in the vicinity of the target and the valve corresponding to the exhaust port to which the target 2 will proceed will be b1%. For example, when the target 2 at the position x1 moves to the right and reaches the position x2, the control unit 14 starts to increase the opening degree of the valve 55b corresponding to the exhaust port 5b at the tip in the moving direction. As a result, when the target 2 enters the region strongly affected by the exhaust port 5b (the region between the position x3 and the position x5), the exhaust amount in that region is large.

The valve opening degree of 0% means that the valve is closed and exhaust from the exhaust port corresponding to the valve is not performed. Further, the valve opening of 100% is a state in which the opening of the valve is expanded to the maximum limit allowed by the structure, and the exhaust amount from the corresponding exhaust port is maximized. The opening b1% that is set is such that the gas pressure in the vicinity of the target is suitable for sputtering. The opening b1% is, for example, such that the exhaust capacity is 40 to 50% of the maximum exhaust capacity. However, the range is not limited to this range, and a suitable opening may be appropriately set according to the type of gas (inert gas or reactive gas, etc.) and the required specifications of film formation.

In the illustrated example, the control unit 14 gradually increases the opening degree of the valve corresponding to the exhaust port as the target 2 approaches the exhaust port, and the target 2 reduces the influence of the exhaust port. The control is performed so that the amount of exhaust gas becomes suitable when the vehicle enters a region that is strongly received. Also, when the target 2 moves to a region that is not significantly affected by the exhaust port, the opening of the valve corresponding to the exhaust port is gradually reduced as the target 2 moves away from the exhaust port. The exhaust volume of the exhaust port is reduced (or becomes zero). According to such an opening degree control, it is possible to form a gas flow from the introduction ports 41 and 42 to the exhaust port near the target.

However, the method of controlling the opening is not limited to this. For example, the valve may be opened and closed quickly instead of gradually opening and closing. Further, the exhaust may be performed even at an exhaust port far from the target and having a small influence on the sputtering region. The valve opening at that time may be b1%, or may be another value (for example, a value between 0% and b1%).

In the present embodiment, the relationship between the valve opening degrees of the valves 55a to 55d according to the target position x is stored in advance as a control profile. Such a control profile is based on, in advance, the capacity and flow rate control value of the exhaust means 15, the capacity and flow rate control value of the gas introduction means 16, the positional relationship between the exhaust port and the introduction port, and the required sputtering performance. Are stored in the memory in the form of tables and mathematical formulas.

Then, the control unit 14 acquires the target position x using a target position acquisition unit such as an encoder, determines the opening degree of each valve 55a to 55d by referring to the control profile, and then sends the opening degree control signal to each valve. To send. In this way, the control unit 14 adjusts the exhaust amount from each of the plurality of exhaust ports 5a to 5d according to the position of the sputtering area A1 in the chamber. For example, in the illustrated example, when the target 2 approaches any exhaust port, the controller 14 increases the opening degree of the valve 55 connected to the exhaust port. Then, when the target 2 moves away from the exhaust port, the opening degree of the valve 55 connected to the exhaust port is reduced. As a result, the closer the valve 55 is to the target, the larger the opening, and the higher the exhaust capacity of the corresponding exhaust port 5.

According to the control of the illustrated example, the valve opening degree corresponding to the exhaust port near the target is b1%, so the exhaust capacity of the exhaust port also becomes a numerical value according to the opening degree. As a result, regardless of the position of the target 2 in the chamber, the gas is exhausted with the same exhaust capacity in the vicinity of the target, so that the gas pressure in the vicinity of the sputtering region A1 becomes uniform throughout the film forming process. Therefore, it is possible to reduce the unevenness of the film thickness and film quality of the film formed on the film-forming target 6 and suppress the deterioration of the sputtering quality.

As described above, by making the valve opening degree of the exhaust port near the target 2 larger than the valve opening degree of the exhaust port at which the target 2 is distant, the targets from the introduction ports 41 and 42 are set inside the chamber. A flow of gas is formed towards the exhaust port close to. As a result, a large amount of gas is sent to the vicinity of the sputtering region A1, and the further effect of improving the film forming rate is obtained.

[Embodiment 2]
Next, a second embodiment of the present invention will be described. The following description will be focused on the differences from the first embodiment, and the same components will be assigned the same reference numerals to simplify the description.

FIG. 4 is a schematic diagram showing the configuration of the film forming apparatus 1 of this embodiment. The difference from FIG. 1 is that pressure sensors 71 and 72 are arranged in the rotating cathode unit 8 as pressure acquisition means. The pressure sensors 71 and 72 are devices that acquire a pressure value near the rotating cathode unit 8 and send it to the control unit 14. As the pressure sensor 7, a diaphragm vacuum gauge such as a capacitance manometer, a heat conduction vacuum gauge such as a Pirani vacuum gauge or a thermocouple vacuum gauge, and various vacuum gauges such as a quartz friction vacuum gauge can be used.

In the illustrated example, pressure sensors are installed on the deposition preventing plates 261 and 262 in order to measure the pressure in the vicinity of the sputtering region. With this configuration, it is possible to select the pressure sensor on the side of the moving direction from the plurality of pressure sensors and measure the pressure in the region in front of the direction of movement of the target. However, the number of pressure sensors and the installation location are not limited to this. For example, the pressure sensor may be installed at another position of the rotary cathode unit or on the moving table 230.

FIG. 5 is a flowchart explaining the valve opening control of this embodiment. After starting the film formation process, in step S101, the control unit 14 acquires the target position x using the encoder. In step S102, the control unit 14 selects the valve whose opening is to be controlled from the valves 55a to 55d. The control unit 14 selects a valve corresponding to the exhaust port located in front of the moving direction of the target 2 based on the moving direction and moving speed of the target 2. For example, when the target 2 advances from left to right in the figure and reaches the position shown in FIG. 4, the control unit 14 selects the valve 55d corresponding to the exhaust port 5d located in the front in the moving direction.
The position of the valve to be selected is not limited to the above. For example, instead of the valve corresponding to the exhaust port on the front side of the moving direction of the target 2, or together with the valve corresponding to the exhaust port on the front side of the moving direction of the target 2, it corresponds to the exhaust port close to the current position of the target 2. The valve may be selected. Alternatively, the processing of this step may not be performed, and the opening degrees of all the valves may always be determined between 0% and 100% according to the positional relationship with the target (particularly the distance).

In step S103, the pressure sensors 71 and 72 acquire the pressure value, and in step S104
At 14, the control unit 14 determines the valve control value. For example, when the pressure value in the region where the target 2 is going to enter is higher than the value suitable for sputtering, the opening degree of the selected valve is increased to lower the pressure in the region. If the current pressure value is within the range suitable for sputtering, the current opening is maintained. Subsequently, in step S105, it is determined whether or not the film formation of the film formation target 6 is completed. If not completed, the process proceeds to step 106, and the movement on the guide rail 250 and the film formation are continued. By the processing of this flow, the exhaust amount from the plurality of exhaust ports is appropriately controlled according to the position of the sputtering region in the chamber.

In this embodiment, the pressure value in the vicinity of the target is measured by the pressure sensor 7 that moves together with the rotating cathode unit, and the exhaust amount from each of the exhaust ports 5a to 5d is controlled. Therefore, since the amount of sputtered particles emitted from the target 2 and reaching the film-forming target 6 and deposited can be made substantially uniform, unevenness in film thickness and film quality at the time of film formation can be reduced, and the quality of sputtering can be reduced. The decrease can be suppressed.
Also in the present embodiment, as in the above embodiment, the exhaust capacity of the exhaust port near the target can be improved, and the exhaust capacity of the exhaust port far from the target can be reduced or made zero. As a result, it is possible to form a gas flow from the introduction port to the vicinity of the target and perform good film formation.

[Third Embodiment]
Next, a third embodiment of the present invention will be described. The description will be focused on the differences from the above-described embodiments, and the same components will be assigned the same reference numerals to simplify the description.

FIG. 6 is a schematic diagram showing the configuration of the film forming apparatus 1 of this embodiment. In the present embodiment, a plurality of pressure sensors 73 to 77 are arranged inside the chamber as pressure acquisition means along the moving direction of the sputtering region A1 (direction parallel to the X axis). The plurality of pressure sensors 73 to 77 are arranged at substantially the same height as the sputtering area A1, and are linearly arranged in a line at regular intervals in the moving direction. The number of pressure sensors and the location of the pressure sensors are not limited to this. For example, it may be arranged on the front side wall (front wall) 10e. Further, pressure sensors may be arranged on both the front wall and the rear wall. In that case, the average value of the measured values of the sensors on the front wall side and the rear wall side may be used for the valve opening control.

In the illustrated example, each pressure sensor is arranged at substantially the same height as the sputtering area A1. However, the pressure sensor may be arranged at a height closer to the film formation target than the sputtering area A1, or may be arranged at a height opposite to the film formation target with the sputtering area A1 interposed therebetween. Further, the pressure sensors may be arranged at a plurality of heights. Further, the interval between the pressure sensors does not have to be constant, and the interval may be changed according to the pressure distribution in the chamber estimated from the positions of the exhaust port and the introduction port. For example, the interval between the pressure sensors in the region where the pressure change is large can be narrowed, and the interval between the pressure sensors in the region where the pressure change is small can be widened.

The control unit 14 detects information about the position, the moving direction, and the moving speed of the rotary cathode unit 8 in the chamber by the encoder. Further, the control unit 14 stores the position information of each of the pressure sensors 73 to 77 and the position information of each of the exhaust ports 5a to 5d in a memory or the like. Then, the control unit 14 selects a pressure sensor in front of the moving direction of the target 2 and a valve corresponding to the exhaust port in front of the moving direction based on the moving direction and moving speed of the target 2. For example, when the target 2 advances from left to right in the figure and reaches the position shown in FIG. 6, the control unit 14 controls the pressure sensor 77 located in the front in the moving direction and the exhaust port 5d also located in the front in the moving direction. Select the corresponding valve 55d.
When the measured value of the pressure sensor 77 is out of the range in which the suitable sputtering is performed, the opening amount of the valve 55d is adjusted to change the exhaust amount from the exhaust port 5d. In this way, the pressure in the region in the front in the moving direction can be adjusted in advance to a value close to the target value suitable for sputtering.

The position of the valve to be selected is not limited to the above. For example, instead of the pressure sensor and valve in front of the moving direction of the target 2, or together with the pressure sensor and valve in front of the moving direction of the target 2, a pressure sensor and valve close to the current position of the target 2 may be selected. Good. Alternatively, the control unit 14 always acquires the measured values of all the pressure sensors, performs the correction based on the relationship with the target position to acquire the pressure value, and always sets the opening of all the valves to the distance from the target. Accordingly, it may be determined between 0% and 100%.

In the present embodiment, the pressure value near the target is measured by using the plurality of pressure sensors arranged in the chamber, and the exhaust amount from each of the exhaust ports 55a to 55d is controlled. Therefore, the amount of sputtered particles that reach the film formation target 6 after being emitted from the target 2 can be made substantially uniform, so that unevenness in film thickness and film quality during film formation can be reduced, and the quality of sputtering can be reduced. The decrease can be suppressed.
Also in the present embodiment, as in the above-described embodiment, the exhaust capacity of the exhaust port near the target can be improved, and the exhaust capacity of the exhaust port distant from the target can be reduced or reduced to zero. In that case, a further effect of forming a gas flow from the introduction port to the vicinity of the target and performing favorable film formation can be obtained.

[Embodiment 4]
Next, a fourth embodiment of the present invention will be described. The description will be focused on the differences from the above-described embodiments, and the same components will be assigned the same reference numerals to simplify the description.

FIG. 7 is a schematic diagram showing the configuration of the film forming apparatus 1 of this embodiment. To avoid complicating the drawing, the target drive device 11, the moving base drive device 12, and the power supply 13 are omitted. The film forming apparatus 1 includes a plurality of pumps (exhaust means 15a to 15d), and the exhaust means 15a to 15d exhaust gas from the exhaust ports 5a to 5d, respectively. The control unit 14 controls the opening degrees of the valves 55a to 55d to adjust the exhaust capacity of the corresponding exhaust ports 5a to 5d.
In FIG. 7, one pump is connected to one exhaust port, but a plurality of exhaust ports may be grouped and one pump may be connected to one group. I do not care. For example, the exhaust means 15a may be connected to the exhaust ports 5a and 5b, and the exhaust means 15c may be connected to the exhaust ports 5c and 5d. In that case, a valve may be provided between the exhaust port 5a and the exhaust unit 15a and between the exhaust port 5b and the exhaust unit 15a, or between the exhaust ports 5a and 5b and the exhaust unit. In addition, a valve commonly connected to the two exhaust ports may be provided.

With the film forming apparatus 1 having such a configuration, as in the above embodiments, measurement of a pressure sensor arranged on the inner wall of the rotating cathode unit 8 or the chamber 10 according to a predetermined opening control profile. By adjusting the exhaust amount from each of the exhaust ports 5a to 5d based on the value, it is possible to maintain the gas pressure in the vicinity of the sputtering area A1 within an appropriate predetermined range and perform suitable sputtering.

[Fifth Embodiment]
Next, a fifth embodiment of the invention will be described. The control unit 14 in the present embodiment can adjust the exhaust capacity of the pump of the exhaust unit 15. For example, when the exhaust means 15 is a cryopump, the exhaust amount is increased by lowering the temperature of the cryosurface, and the gas pressure is lowered. Further, when the exhaust means 15 is a turbo molecular pump, the amount of exhaust is increased by increasing the rotational speed of the turbine blade, and the gas pressure is decreased. In addition, the control unit performs appropriate control according to the method of the vacuum pump, so that the exhaust amount can be controlled for each exhaust port.

The case where the control of the present embodiment is applied to the film forming apparatus 1 of FIG. 4 will be described. The control unit 14 controls the measured values of the pressure sensor 71, 72 which is ahead of the target in the moving direction of the target, and the suitable sputtering. When the measured value is out of the preferable range, the output of the exhaust means 15 is adjusted to bring the gas pressure to an appropriate value. According to the control method of the present embodiment, although the exhaust amount of each exhaust port cannot be individually controlled, the gas pressure in the vicinity of the sputtering region can be maintained within a suitable range even when the target is moving.

The pump output control as in the present embodiment and the valve opening control for each exhaust port as in the above embodiments may be combined. Thereby, the gas pressure can be controlled more finely.

[Sixth Embodiment]
Next, a sixth embodiment of the invention will be described. The description will be focused on the differences from the above-described embodiments, and the same components will be assigned the same reference numerals to simplify the description.

FIG. 8 is a schematic diagram showing the configuration of the film forming apparatus 1 of this embodiment. To avoid complicating the drawing, the target drive device 11, the moving base drive device 12, and the power supply 13 are omitted. The film forming apparatus 1 of the present embodiment includes a plurality of pumps (exhaust means 15a to 15d) corresponding to the exhaust ports 5a to 5d, as in the fourth embodiment. In the present embodiment, the amount of exhaust from each exhaust port is adjusted by adjusting the output of the exhaust means 15a to 15d, rather than the opening of the valve.

With the film forming apparatus 1 having such a configuration, as in the above embodiments, measurement of a pressure sensor arranged on the inner wall of the rotating cathode unit 8 or the chamber 10 according to a predetermined opening control profile. By adjusting the exhaust amount from each exhaust port based on the value, it is possible to maintain the gas pressure in the vicinity of the sputtering region A1 within an appropriate range and perform suitable sputtering.

[Embodiment 7]
Next, a seventh embodiment of the present invention will be described. The description will be focused on the differences from the above-described embodiments, and the same components will be assigned the same reference numerals to simplify the description.

FIG. 9 is a schematic diagram showing the configuration of the film forming apparatus 1 of this embodiment. In the present embodiment, a planar cathode unit 308 using a flat plate-shaped target 302 is used instead of a rotating cathode unit using a cylindrical target. The planar cathode unit 308 has a target 302 which is arranged in parallel with the film formation target. A backing plate 302a to which electric power is applied from the power source 13 is provided on the surface opposite to the film formation target 6 with the target 302 interposed therebetween. Further, a magnet unit 3 which is a magnetic field generating unit is arranged on the side opposite to the film-forming target 6 with the target 302 and the backing plate 302a interposed therebetween. By applying power to the backing plate 302a, sputtered particles are generated in the sputtering area A1. The planar cathode unit 308 is installed on the upper surface of the moving table 230.

In the film forming step, the planar cathode unit 308 is arranged on the moving region facing the film forming surface of the film forming object 6 along the guide rail 250 in a direction orthogonal to the longitudinal direction of the target 302 (in the figure, Move in the X-axis direction). The vicinity of the surface of the target 302 facing the film formation target 6 is a sputtering region A1 where the electron density is increased by the magnetic field generated by the magnet unit 3. In the film forming step, the sputtering area A1 moves along the film formation surface of the film formation target 6 as the planar cathode unit 308 moves, and the film formation target 6 is sequentially formed.

Note that, as shown in FIGS. 10A to 10C, the magnet unit 3 may be movable in the planar cathode unit 308 relative to the target 302. By doing so, the sputtering region A1 can be relatively displaced with respect to the target 302, and the utilization efficiency of the target 302 can be improved.

Even when the planar cathode unit 308 is used as in this embodiment, the measured value of the pressure sensor arranged on the inner wall of the planar cathode unit 308 or the chamber 10 is measured according to a predetermined opening control profile. Based on this, by adjusting the exhaust amount from each of the exhaust ports 5a to 5d, it is possible to maintain the gas pressure in the vicinity of the sputtering region A1 within an appropriate range and perform suitable sputtering.
Also in this embodiment, the exhaust capacity of the exhaust port near the target can be improved, and the exhaust capacity of the exhaust port far from the target can be reduced or reduced to zero. As a result, it is possible to form a gas flow from the introduction port to the vicinity of the target and perform good film formation.

[Embodiment 8]
Next, an eighth embodiment of the present invention will be described. The description will be focused on the differences from the above-described embodiments, and the same components will be assigned the same reference numerals to simplify the description.

FIG. 11 shows a film forming apparatus 1 according to this embodiment.
In FIGS. 10A to 10C described above, the magnet unit 3 in the planar cathode unit can be moved relative to the target 302. In the present embodiment, the flat plate-shaped target 402 is fixedly provided in the chamber 10. The target 402 has a size that corresponds to the entire surface of the film-forming target 6 in both the X-axis direction and the Y-axis direction. Further, the magnet unit 3 as the magnetic field generating means moves with respect to the target 402 fixed in the chamber 10 (that is, with respect to the chamber 10). Along with this, the sputtering region A1 of the target 402 where the target particles are emitted also moves with respect to the film-forming target 6.

The target 402 is placed at the boundary between the vacuum region and the atmospheric pressure region, and the magnet unit 3 is placed in the atmosphere outside the chamber 10. That is, the target 402 is arranged so as to hermetically close the opening 10c1 provided in the bottom wall 10c of the chamber 10. The target 402 faces the internal space of the chamber 10 and faces the film formation target 6. A backing plate 402a to which power is applied from the power source 13 is provided on the surface of the target 402 opposite to the film formation target 6, and the backing plate 402a faces the external space. Although the target 402 is arranged at the boundary between the vacuum region and the atmospheric pressure region here, the present invention is not limited to this, and another member may be provided between the target 402 and the atmospheric pressure region. The target 402 may be arranged on the bottom wall 10c of the chamber 10.

The magnet unit 3 is arranged outside the chamber 10, and the pressure sensor 7 is arranged inside the chamber 10. The magnet unit 3 is supported by the magnet unit moving device 430 and is movable along the target 402 in the X-axis direction. The magnet unit 3 is driven by the magnet driving device 121 driving the magnet unit moving device 430. The magnet unit moving device 430 is a device that linearly guides the magnet unit 3 in the X-axis direction, and is composed of a moving base that supports the magnet unit 3 and a guide such as a rail that guides the moving base, although not particularly shown. .. The movement of the magnet unit 3 causes the sputtering area A1 to move in the X-axis direction.

The pressure sensor 7 is supported by a sensor moving device arranged in the chamber 10 and is movable along the target 402 in the X-axis direction. Similarly to the magnet unit moving device 430, the sensor moving device 450 also includes a moving base that supports the pressure sensor 7, a guide such as a rail that guides the moving base, and the like. The magnet unit 3 and the pressure sensor 7 are controlled and moved by the control unit 14, and the control unit 14 acquires the measurement value of the pressure sensor 7 at any time.
In addition to the method of controlling the valve opening by acquiring the pressure value while moving the pressure sensor 7 as in the illustrated example, based on the measured values of a plurality of pressure sensors arranged at a plurality of positions inside the chamber. A method of controlling the valve opening degree or a method of controlling the valve opening degree according to a predetermined control profile can also be used.

In the present embodiment, since the target 402 is arranged on the bottom wall 10c of the chamber 10, the exhaust ports 5a to 5d are provided on the rear wall 10f of the chamber 10 in a row at substantially the same height. Each exhaust port is connected to the exhaust unit 15 via valves 55a to 55d. The location of the exhaust port is not limited to this. For example, it may be installed on both the rear wall 10f and the front wall 10e. Further, the positions and the numbers of the inlets 41 and 42 are not limited to the illustrated example. The control unit 14 detects the position of the magnet unit 3 with an encoder and acquires the position of the sputtering area A1. Then, similarly to each of the above-described embodiments, the pressure is adjusted by controlling the exhaust amount from the exhaust port in front of the moving direction of the sputtering area A1.

Even in the film forming apparatus in which the magnet unit 3 moves as in the present embodiment, the exhaust amount from the exhaust port near the target can be appropriately controlled. Therefore, since the amount of sputtered particles emitted from the target 2 and reaching the film formation target 6 and deposited can be made substantially uniform, unevenness in film thickness and film quality at the time of film formation can be reduced, and deterioration of sputtering quality can be suppressed. can do.
Also in this embodiment, the exhaust capacity of the exhaust port near the sputtering area A1 can be improved, and the exhaust capacity of the exhaust port far from the sputtering area A1 can be reduced or reduced to zero. As a result, it is possible to form a gas flow from the inlet to the vicinity of the sputtering region A1 and perform good film formation.

[Other Embodiments]
In each of the above-described embodiments, the case where the rotary cathode unit 8, the planar cathode unit 308, and the magnet unit 3 are one is shown, but a plurality of these units may be arranged inside the chamber. For example, when there are a plurality of rotary cathode units 8, it is sufficient to adjust the exhaust amount of each rotary cathode unit in the vicinity of the target or the exhaust port at the front of the target in the moving direction.

In each of the above-described embodiments, the cathode using the rotating cathode unit, the planar cathode unit, and the magnet unit moving device is shown as the configuration of the cathode. As a method of controlling the exhaust amount of the exhaust port, a method of adjusting the valve opening and a method of adjusting the output of the pump are shown. Moreover, the exhaust amount control based on the pressure value measured from time to time using the pressure sensor and the exhaust amount control method based on the predetermined control profile are shown. The combination of these components may be arbitrarily combined with each other as long as no contradiction occurs.

1: film forming device, 2: target, 6: film forming object, 10: chamber, 12: moving table drive device, A1: sputtering area

Claims (21)

A chamber in which the film formation target and the target are arranged,
Moving means for moving a sputtering area for generating sputtered particles from the target in the chamber;
A plurality of exhaust ports provided in the chamber,
Exhaust amount adjusting means for adjusting the exhaust amount from each of the plurality of exhaust ports,
Have
A film forming apparatus for forming a film by depositing the sputtered particles on the film formation target while moving the sputtering region by the moving means,
The film forming apparatus, wherein the exhaust amount adjusting means adjusts the exhaust amount from each of the plurality of exhaust ports according to the position of the sputtering region in the chamber. 2. The exhaust amount adjusting means adjusts the exhaust amount from each of the plurality of exhaust ports so that the exhaust amount becomes larger as the exhaust port is closer to the sputtering region. Film forming equipment. The exhaust amount adjusting means maintains the pressure of the sputtering gas in the vicinity of the sputtering area within a predetermined range at any position where the sputtering area is moved by the moving means during the film formation. The film forming apparatus according to claim 1 or 2, wherein the exhaust amount from each of the plurality of exhaust ports is adjusted. The film forming apparatus according to claim 1, wherein the plurality of exhaust ports are arranged along a moving direction of the sputtering region by the moving unit. Further comprising a pressure acquisition means for acquiring the pressure value of the gas in the chamber,
The exhaust volume adjusting means adjusts the exhaust volume from each of the plurality of exhaust ports based on the pressure value in the vicinity of the sputtering region acquired by the pressure acquiring means. The film forming apparatus according to any one of items. The film forming apparatus according to claim 5, wherein the pressure acquisition unit moves together with the sputtering region. The film forming apparatus according to claim 5, wherein a plurality of the pressure acquisition units are arranged in the chamber along a moving direction of the sputtering region by the moving unit. The film forming method according to claim 7, wherein the exhaust amount adjusting means uses the pressure value acquired by the pressure acquiring means arranged in front of a moving direction in which the sputtering area is moved by the moving means. apparatus. 9. The film forming apparatus according to claim 7, wherein the pressure acquisition unit uses the pressure value acquired by the pressure acquisition unit close to the current position of the sputtering region. The exhaust amount adjusting means adjusts the exhaust amount based on a control profile in which the exhaust amount from each of the plurality of exhaust ports according to the position of the sputtering region is stored. 4. The film forming apparatus according to any one of 4 above. 11. The exhaust amount adjusting means selects the exhaust port located in front of a moving direction in which the sputtering region is moved by the moving means, from the plurality of exhaust ports. The film forming apparatus according to item. 12. The film forming apparatus according to claim 1, wherein the exhaust amount adjusting unit selects the exhaust port near the current position of the sputtering region from the plurality of exhaust ports. Further having a plurality of valves corresponding to each of the plurality of exhaust ports,
13. The film forming apparatus according to claim 1, wherein the exhaust amount adjusting means adjusts the exhaust amount by controlling the opening of the valve. Further having a plurality of exhaust means corresponding to each of the plurality of exhaust ports,
14. The film forming apparatus according to claim 1, wherein the exhaust amount adjusting unit adjusts the exhaust amount by controlling the exhaust capacity of the exhaust unit. 15. The film forming apparatus according to claim 1, wherein the moving unit moves the sputtering region by moving the target in a direction intersecting the longitudinal direction of the target. .. The target has a cylindrical shape,
The film forming apparatus according to claim 15, further comprising a rotating unit that rotates the target. The film forming apparatus according to claim 15, wherein the target has a flat plate shape. The target is fixed to the chamber so as to face the film formation target,
15. The moving unit moves the sputtering region by moving a magnet arranged to face the film formation target through the target. The film forming apparatus according to item. A chamber in which the film formation target and the target are arranged,
Moving means for moving a sputtering area for generating sputtered particles from the target in the chamber;
A plurality of exhaust ports provided in the chamber,
Exhaust amount adjusting means for adjusting the exhaust amount from each of the plurality of exhaust ports,
Have
A film forming apparatus which deposits the sputtered particles on the film formation target while forming the film by moving the sputtering region by the moving means. A film forming method using a chamber in which an object to be film-formed and a target are arranged inside and a plurality of exhaust ports are provided,
A step of depositing the sputtered particles on the film-forming target to form a film while moving a sputtering region for generating sputtered particles from the target in the chamber;
Adjusting the amount of exhaust from each of the plurality of exhaust ports,
Including
In the adjusting step, the amount of exhaust gas from each of the plurality of exhaust ports is adjusted according to the position of the sputtering region in the chamber. A method of manufacturing an electronic device, comprising:
A step of arranging a film-forming target and a target facing the film-forming target in a chamber provided with a plurality of exhaust ports;
A step of depositing the sputtered particles on the film-forming target to form a film while moving a sputtering region for generating sputtered particles from the target in the chamber;
Adjusting the amount of exhaust from each of the plurality of exhaust ports,
Including
In the adjusting step, the amount of exhaust gas from each of the plurality of exhaust ports is adjusted according to the position of the sputtering region in the chamber.

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