JP2020102600A - Control circuit of light emitting and receiving device, position detecting device, imaging device, and control method - Google Patents

Abstract

To reduce a drive current or improve an S/N ratio.SOLUTION: A light emitting and receiving device 810 includes a light emitting element 812, a first light receiving element PD1, and a second light receiving element PD2. A reference signal generator 910 generates a reference signal SREF including a component of a predetermined reference frequency ω0. A drive circuit 920 supplies a drive signal IDRV to the light emitting element 812 such that a feedback signal SFB corresponding to the output of the first light receiving element PD1 and the reference signal SREF match. A correlation detector 930 performs correlation detection on the output of the second light receiving element PD2 using the component of the reference frequency ω0.SELECTED DRAWING: Figure 43

Description

The present disclosure relates to a light emitting/receiving device and its control.

For example, a light emitting/receiving device called a photo reflector is used to detect an object approaching an electronic device or the like. Patent Document 1 discloses an example of a conventional light emitting and receiving device. The light emitting and receiving device disclosed in the document includes a substrate, a light emitting element and a light receiving element mounted on the substrate, and a sealing resin that covers the light emitting element and the light receiving element. The sealing resin transmits the light from the light emitting element. When the light from the light emitting element is reflected by the object, the reflected light is received by the light receiving element. Thereby, the approach of the object can be detected.

JP, 2010-45108, A

The present invention has been made in such a situation, and one of the exemplary objects of an aspect thereof is to reduce the drive current or improve the S/N ratio in the light receiving and emitting device. Further, one of exemplary purposes of another aspect is to provide a light emitting and receiving device capable of performing a detection function with higher accuracy.

An aspect of the present invention relates to a control circuit for a light receiving and emitting device including a light emitting element, a first light receiving element and a second light receiving element. The control circuit supplies a drive signal to the light emitting element so that the reference signal generator that generates the reference signal including the component of the predetermined reference frequency and the feedback signal corresponding to the output of the first light receiving element match the reference signal. And a detection circuit that performs correlation detection on the output of the second light receiving element using the component of the reference frequency.

Another aspect of the present invention relates to a light emitting and receiving device. The light emitting and receiving device includes a base material, a conductive portion formed on the base material, a first element mounted on the base material and emitting light, and mounted on the base material and emitted from the first element. A second resin that receives light; and a sealing resin that covers the first element and the second element and that transmits the light emitted from the first element. The two elements are arranged apart from each other in a first direction that is perpendicular to the thickness direction of the base material, and are arranged on the opposite side of the second element with the first element sandwiched in the first direction. And a third element that receives light from the first element and a cover portion of the sealing resin that overlaps the third element when viewed in the thickness direction, and transmits light more than the sealing resin. A light shielding layer made of a material having a low rate.

According to one aspect of the present invention, the drive current can be reduced or the S/N ratio can be improved. Further, according to an aspect of the present invention, it is possible to perform a detection function with higher accuracy.

Other features and advantages of the present disclosure will become more apparent from the detailed description given below with reference to the accompanying drawings.

FIG. 1 is a plan view of relevant parts showing a light emitting and receiving device according to a first embodiment of the present disclosure. FIG. 1 is a front view showing a light emitting/receiving device according to a first embodiment of the present disclosure. FIG. 3 is a rear view showing the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 1 is a bottom view and a circuit diagram showing a light emitting and receiving device according to a first embodiment of the present disclosure. It is sectional drawing which follows the VV line of FIG. It is sectional drawing which follows the VI-VI line of FIG. It is sectional drawing which follows the VII-VII line of FIG. It is sectional drawing which follows the VIII-VIII line of FIG. It is sectional drawing which follows the IX-IX line of FIG. FIG. 1 is an enlarged cross-sectional view of a main part showing a light emitting and receiving device according to a first embodiment of the present disclosure. FIG. 1 is an enlarged cross-sectional view of a main part showing a light emitting and receiving device according to a first embodiment of the present disclosure. FIG. 3 is an enlarged rear view of the essential parts showing the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 3 is an enlarged cross-sectional perspective view showing a first element of the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 5 is an enlarged cross-sectional view of a main part showing an example of the method for manufacturing the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 5 is an enlarged cross-sectional view of a main part showing an example of the method for manufacturing the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 8 is an enlarged cross-sectional view of a main part showing a first modified example of the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 9 is an enlarged cross-sectional view of a main part showing a second modified example of the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 8 is an enlarged cross-sectional view of a main part showing a third modified example of the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 11 is an enlarged cross-sectional view of a main part showing a fourth modified example of the light emitting and receiving device according to the first embodiment of the present disclosure. It is a principal part expanded sectional view which shows the 5th modification of the light emitting and receiving device which concerns on 1st Embodiment of this indication. It is a principal part expanded sectional view which shows the 6th modification of the light emitting and receiving device which concerns on 1st Embodiment of this indication. FIG. 16 is an enlarged cross-sectional view of a main part showing a seventh modified example of the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 20 is a plan view of a principal portion showing an eighth modified example of the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 10 is a plan view of a main part showing a ninth modified example of the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 20 is a main-portion plan view showing a tenth modified example of the light receiving and emitting device according to the first embodiment of the present disclosure; It is an expanded sectional perspective view showing the 1st element of the 10th modification of the light emitting and receiving device concerning a 1st embodiment of this indication. FIG. 20 is an enlarged cross-sectional view of a main part showing a first element of a tenth modified example of the light emitting and receiving device according to the first embodiment of the present disclosure. FIG. 4 is a plan view of a main part showing a light emitting and receiving device according to a second embodiment of the present disclosure. It is a bottom view showing the light emitting and receiving device concerning a 2nd embodiment of this indication. It is sectional drawing which follows the XXX-XXX line of FIG. FIG. 29 is a cross-sectional view taken along the line XXXI-XXXI in FIG. 28. It is a principal part top view which shows the light emitting/receiving device which concerns on 3rd Embodiment of this indication. It is a bottom view showing a light emitting and receiving device concerning a 3rd embodiment of this indication. It is sectional drawing which follows the XXXIV-XXXIV line of FIG. It is sectional drawing which follows the XXXV-XXXV line of FIG. It is sectional drawing which follows the XXXVI-XXXVI line of FIG. FIG. 33 is a cross-sectional view taken along the line XXXVII-XXXVII of FIG. 32. It is a principal part top view which shows the light emitting/receiving device which concerns on 4th Embodiment of this indication. FIG. 13 is a main part plan view showing a first modified example of the light emitting and receiving device according to the fourth embodiment of the present disclosure. FIG. 20 is a plan view of a main part showing a second modified example of the light emitting and receiving device according to the fourth embodiment of the present disclosure. It is a block diagram of a position detection system. 42(a) is a diagram for explaining the operation of the position detection system of FIG. 41, FIG. 42(b) is a diagram showing the relationship between the position z and the second detection signal Vs2, and FIG. 42(c). FIG. 42 is a diagram for explaining another operation of the position detection system in FIG. 41. It is a circuit diagram of a position detection system including a control circuit according to an embodiment. It is a figure explaining operation|movement of the position detection system of FIG. It is a figure which shows the frequency characteristic of flicker noise. It is a circuit diagram which shows one Example of a control circuit. It is a figure which shows the pin arrangement of a light emitting and receiving device and a control circuit concerning one Example. It is a figure which shows the pin arrangement of a light emitting and receiving device and a control circuit concerning one Example. It is a figure which shows the pin arrangement of a light emitting and receiving device and a control circuit concerning one Example. It is a block diagram of a positioning system. It is sectional drawing of the sealing resin in which the light shielding layer which concerns on a modification is formed.

Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

The terms "first", "second", "third" and the like in the present disclosure are merely used as labels and are not intended to permutate those objects.

<First Embodiment>
1 to 15 show the light emitting and receiving device according to the first embodiment of the present disclosure. The light emitting and receiving device A1 of this embodiment includes a base material 1, a conductive portion 2, a first element 3, a second element 4, a third element 5, a first wire 61, a second wire 62, a third wire 63, and a sealing. The resin 7 and the light shielding layer 8 are provided.

FIG. 1 is a plan view of relevant parts showing a light emitting and receiving device A1. FIG. 2 is a front view showing the light emitting and receiving device A1. FIG. 3 is a rear view showing the light receiving and emitting device A1. FIG. 4 is a bottom view and a circuit diagram showing the light receiving and emitting device A1. FIG. 5 is a sectional view taken along the line VV of FIG. FIG. 6 is a sectional view taken along the line VI-VI of FIG. FIG. 7 is a sectional view taken along the line VII-VII in FIG. FIG. 8 is a sectional view taken along the line VIII-VIII of FIG. FIG. 9 is a sectional view taken along the line IX-IX in FIG. FIG. 10 is an enlarged cross-sectional view of a main part showing the light emitting and receiving device A1. FIG. 11 is an enlarged cross-sectional view of an essential part showing the light emitting and receiving device A1. FIG. 12 is an enlarged rear view of an essential part showing the light emitting and receiving device A1. FIG. 14 is an enlarged sectional view of an essential part showing an example of a method for manufacturing the light emitting and receiving device A1. FIG. 15 is an enlarged sectional view of an essential part showing an example of a method for manufacturing the light emitting and receiving device A1. In these figures, the z direction is the thickness direction of the substrate 1. The x direction is the first direction of the present disclosure. The y direction is the direction that is perpendicular to the x and z directions. Further, in FIG. 1, the sealing resin 7 is omitted for convenience of understanding, and a second portion 75 described later is shown by imaginary lines and hatching. Further, the light shielding layer 8 is hatched.

The size of the light emitting and receiving device A1 is not particularly limited. As an example of the size of the light emitting and receiving device A1, the size in the x direction is 1.3 mm to 3.5 mm, the size in the y direction is 0.4 mm to 2.0 mm, and the size in the z direction is 0.2 mm to 0.8 mm. In the illustrated example, the dimension in the x direction is 1.5 mm, the dimension in the y direction is 0.55 mm, and the dimension in the z direction is 0.3 mm.

The base material 1 supports the first element 3, the second element 4, and the third element 5. The material of the base material 1 is not particularly limited, and is made of, for example, an insulating material such as glass epoxy resin. In the present embodiment, the base material 1 has a long rectangular shape in which the x direction is the longitudinal direction and the y direction is the lateral direction when viewed in the z direction. The base material 1 has a thickness of, for example, 40 μm to 50 μm.

The base material 1 has a main surface 11, a back surface 12, a pair of side surfaces 13, and a pair of end surfaces 14. The main surface 11 faces the z direction and is cotton on which the first element 3, the second element 4, and the third element 5 are mounted. The back surface 12 faces the side opposite to the main surface 11 in the z direction. In the present embodiment, the back surface 12 is used as a mounting surface when the light emitting and receiving device A1 is mounted on a circuit board or the like. The pair of side surfaces 13 face both sides in the y direction, and each connect the main surface 11 and the back surface 12. The pair of end faces 14 face both sides in the x direction, and each connect the main surface 11 and the back surface 12.

The conductive portion 2 is formed on the base material 1 and constitutes a conduction path to the first element 3, the second element 4 and the third element 5. The material of the conductive portion 2 is not particularly limited, and a metal having good conductivity is used, and specific examples thereof include Cu, Ni, Ti, Ag, Au and the like. The conductive portion 2 is formed by plating, for example. The conductive portion 2 has a thickness of, for example, about 30 μm, and has a structure in which a Cu layer of about 20 μm and an Au layer of about 10 μm are stacked.

The conductive part 2 of the present embodiment includes a first die bonding part 211, a first extension part 221, a first penetrating part 231, a second bonding part 212, a pair of second extending parts 222, and a pair of second penetrating parts. 232, third die bonding portion 213, pair of third extending portions 223, pair of third penetrating portions 233, common wire bonding portion 240, common penetrating portion 246, first mounting electrode 271, pair of second mounting electrodes 272. , And has a pair of third mounting electrode 273 and fourth mounting electrode 274.

The first die bonding portion 211 is formed on the main surface 11 of the base material 1. The first die bonding portion 211 is a portion to which the first element 3 is die bonded. In the present embodiment, the first die bonding portion 211 is arranged on the main surface 11 substantially at the center in the x direction. The shape of the first die bonding portion 211 is not particularly limited, and in the illustrated example, it has a rectangular shape when viewed in the z direction. The first die bonding section 211 is separated from the pair of side surfaces 13. The first die bonding portion 211 is arranged so as to be biased toward the upper side in the drawing of FIG. 1 in the y direction.

The second bonding portion 212 is formed on the main surface 11 of the base material 1. The second bonding portion 212 is a portion where the second element 4 is die-bonded. In the present embodiment, the second bonding section 212 is arranged on the right side in the x direction in FIG. 1 with respect to the first die bonding section 211. The shape of the second bonding portion 212 is not particularly limited, and in the illustrated example, it is rectangular when viewed in the z direction. The second bonding portion 212 is separated from the pair of side surfaces 13 and the end surface 14. The second bonding portion 212 is arranged substantially at the center of the main surface 11 in the y direction.

The third die bonding portion 213 is formed on the main surface 11 of the base material 1. The third die bonding portion 213 is a portion to which the third element 5 is die bonded. In the present embodiment, the third die bonding portion 213 is arranged on the left side in the x direction in FIG. 1 with respect to the first die bonding portion 211. In other words, the third die bonding section 213 is arranged on the opposite side of the second bonding section 212 with the first die bonding section 211 in between in the x direction. The shape of the third die bonding portion 213 is not particularly limited, and in the illustrated example, it has a rectangular shape when viewed in the z direction. The third die bonding portion 213 is separated from the pair of side surfaces 13 and the end surface 14. The third die bonding portion 213 is arranged substantially at the center of the main surface 11 in the y direction.

The common wire bonding part 240 is a part to which the first wire 61, the second wire 62, and the third wire 63 are bonded. In the present embodiment, the common wire bonding section 240 is located between the second bonding section 212 and the third die bonding section 213 in the x direction and overlaps the first die bonding section 211 when viewed in the y direction. In the illustrated example, the first die bonding portion 211 and the common wire bonding portion 240 have the same position in the x direction. The common wire bonding section 240 is arranged apart from the first die bonding section 211 in the y direction. The shape of the common wire bonding portion 240 is not particularly limited, and in the illustrated example, the common wire bonding portion 240 has a long rectangular shape whose longitudinal direction is the x direction when viewed in the z direction.

In the illustrated example, the y-direction dimensions of the second bonding portion 212 and the third die bonding portion 213 are the same as the dimension y1. The y-direction dimension of the first die bonding portion 211 is smaller than the dimension y1. Further, in FIG. 1, the upper ends of the first die bonding portion 211, the second bonding portion 212, and the third die bonding portion 213 in the y direction in the figure are aligned with each other in the y direction. The dimension of the common wire bonding portion 240 in the x direction is larger than the dimension x1 which is the dimension of the first die bonding portion 211 in the x direction. In FIG. 1, the lower end edges of the second bonding portion 212, the third die bonding portion 213, and the common wire bonding portion 240 in the y direction in the figure are aligned with each other in the y direction.

The first extending portion 221 is connected to the first die bonding portion 211 and extends toward the one side surface 13 in the y direction. In the illustrated example, the first extending portion 221 reaches the one side surface 13. The shape of the first extending portion 221 is not particularly limited, and in the illustrated example, the first extending portion 221 has a rectangular shape having a dimension in the x direction smaller than that of the first die bonding portion 211.

The pair of second extending portions 222 are connected to the second bonding portion 212 and extend toward the pair of side surfaces 13 on both sides in the y direction. In the illustrated example, the pair of second extending portions 222 individually reach the pair of side surfaces 13. The shape of the second extending portion 222 is not particularly limited, and in the illustrated example, the second extending portion 222 has a rectangular shape in which the dimension in the x direction is smaller than that of the second bonding portion 212.

The pair of third extending portions 223 are connected to the third die bonding portion 213 and extend toward the pair of side surfaces 13 on both sides in the y direction. In the illustrated example, the pair of third extending portions 223 individually reach the pair of side surfaces 13. The shape of the third extending portion 223 is not particularly limited, and in the illustrated example, the third extending portion 223 has a rectangular shape whose x-direction dimension is smaller than that of the third die bonding portion 213.

The common extension portion 245 is connected to the common wire bonding portion 240 and extends in the y direction toward the other side surface 13. In the illustrated example, the first extending portion 221 reaches the other side surface 13. The shape of the common extending portion 245 is not particularly limited, and in the illustrated example, the common extending portion 245 has a rectangular shape whose dimension in the x direction is smaller than that of the common wire bonding portion 240.

The first mounting electrode 271 is formed on the back surface 12 of the base material 1. In the illustrated example, the first mounting electrode 271 reaches the one side surface 13. Further, the first mounting electrode 271 is arranged on the back surface 12 substantially at the center in the x direction. The shape of the first mounting electrode 271 is not particularly limited, and is rectangular in the illustrated example. As shown in FIG. 1, the first mounting electrode 271 overlaps the first extending portion 221 and the first die bonding portion 211 when viewed in the z direction. More specifically, the first mounting electrode 271 overlaps with all of the first extending portion 221 and a part of the first die bonding portion 211 when viewed in the z direction.

The pair of second mounting electrodes 272 is formed on the back surface 12 of the base material 1. In the illustrated example, the pair of second mounting electrodes 272 individually reach the pair of side surfaces 13. Further, the pair of second mounting electrodes 272 is arranged on the right side in the drawing of FIG. 4 with respect to the first mounting electrode 271 in the x direction. The shape of the second mounting electrode 272 is not particularly limited and is rectangular in the illustrated example. As shown in FIG. 1, the pair of second mounting electrodes 272 overlaps the pair of second extending portions 222 and the second bonding portion 212 when viewed in the z direction. More specifically, the pair of second mounting electrodes 272 overlaps with all of the pair of second extending portions 222 and part of the second bonding portion 212 when viewed in the z direction.

The pair of third mounting electrodes 273 is formed on the back surface 12 of the base material 1. In the illustrated example, the pair of third mounting electrodes 273 individually reach the pair of side surfaces 13. Further, the pair of third mounting electrodes 273 is arranged on the left side in the drawing of FIG. 4 with respect to the first mounting electrode 271 in the x direction. The shape of the third mounting electrode 273 is not particularly limited and is rectangular in the illustrated example. As shown in FIG. 1, the pair of third mounting electrodes 273 overlaps the pair of third extending portions 223 and the third die bonding portion 213 when viewed in the z direction. More specifically, the pair of third mounting electrodes 273 overlaps with all of the pair of third extending portions 223 and part of the third die bonding portion 213 when viewed in the z direction.

The fourth mounting electrode 274 is formed on the back surface 12 of the base material 1. In the illustrated example, the fourth mounting electrode 274 has reached the other side surface 13. Further, the fourth mounting electrode 274 is arranged on the back surface 12 substantially at the center in the x direction. The fourth mounting electrode 274 is arranged with the first mounting electrode 271 in the y direction. The shape of the fourth mounting electrode 274 is not particularly limited, and is rectangular in the illustrated example. As shown in FIG. 1, the fourth mounting electrode 274 overlaps with the common extending portion 245 and the common wire bonding portion 240 when viewed in the z direction. More specifically, the fourth mounting electrode 274 overlaps with all of the common extending portion 245 and a part of the common wire bonding portion 240 when viewed in the z direction.

The first penetration part 231 penetrates the base material 1. The first penetrating part 231 is connected to the first extending part 221 and the first mounting electrode 271, and overlaps the first extending part 221 and the first mounting electrode 271 when viewed in the z direction. As shown in FIGS. 1, 3 and 12, in the present embodiment, the first penetrating part 231 has a first exposed surface 2311. The first exposed surface 2311 is a surface exposed from the side surface 13 of the base material 1 in the y direction. The first exposed surface 2311 is substantially flush with the side surface 13. The first penetrating part 231 of the present embodiment has a semicircular shape when viewed in the z direction.

In the illustrated example, the first penetrating part 231 has a bottom surface 2312 and a top surface 2313. The bottom surface 2312 is exposed downward from the first mounting electrode 271 in the z direction. The top surface 2313 is a boundary surface with the first extending portion 221. The bottom surface 2312 is a curved surface slightly recessed upward in the z direction. The top surface 2313 is a curved surface that bulges slightly upward in the z direction.

An example of a method of manufacturing the first penetrating part 231 having such a configuration will be described. First, as shown in FIG. 14, a substrate material 10 is prepared. Next, the first extending portion 221 and the first mounting electrode 271 are formed on the substrate material 10. The substrate material 10 has a size and shape capable of forming a plurality of base materials 1, and FIG. 14 is a cross-sectional view of a surface to be the side surface 13.

Next, the through holes 2310 are formed by irradiating, for example, laser light from the first mounting electrode 271 side. By irradiating with laser light, first, a through hole is formed in the first mounting electrode 271, and then a through hole is formed in the substrate material 10. Then, when a part of the first extending portion 221 is slightly removed, the laser light irradiation is stopped. As a result, the through hole 2310 having the illustrated shape is obtained. At this time, a slight concave curved surface is formed on the first extending portion 221.

Then, the through hole 2310 is filled with metal by a technique such as plating. By this plating, a metal portion to be the first penetrating portion 231 is formed. The lower surface of the metal portion in the z direction is preferably a curved surface slightly recessed upward in the z direction. Then, the substrate material 10, the first mounting electrode 271, the first extending portion 221, and the metal portion are collectively cut, so that the base material 1, the first extending portion 221, the first mounting electrode 271 and the first penetrating portion. The part 231 is formed. Then, the side surface 13 is formed on the base material 1, and the first exposed surface 2311 is formed on the first penetrating portion 231.

Such an aspect of the first penetrating part 231 is an example of a specific shape of the first penetrating part 231. The pair of second penetrating portions 232, the pair of third penetrating portions 233, and the common penetrating portion 246, which will be described below, may have the same detailed shape when subjected to the same manufacturing method as the first penetrating portion 231, but the like. It may have a different detailed shape.

The pair of second penetrating portions 232 penetrates the base material 1. The pair of second penetrating portions 232 are individually connected to the pair of second extending portions 222 and the pair of second mounting electrodes 272, and when viewed in the z direction, the pair of second extending portions 222 and the pair of second mounting portions 272 are formed. It overlaps with the mounting electrode 272. As shown in FIGS. 1 to 3, in the present embodiment, the second penetrating portion 232 has a second exposed surface 2321. The second exposed surface 2321 is a surface exposed in the y direction from the side surface 13 of the base material 1. The second exposed surface 2321 is substantially flush with the side surface 13. The second penetration portion 232 of the present embodiment has a semicircular shape when viewed in the z direction.

The pair of third penetrating portions 233 penetrates the base material 1. The pair of third penetrating portions 233 are individually connected to the pair of third extending portions 223 and the pair of third mounting electrodes 273, and when viewed in the z direction, the pair of third extending portions 223 and the pair of third extending portions 223 are formed. It overlaps with the mounting electrode 273. As shown in FIGS. 1 to 3, in the present embodiment, the third penetrating portion 233 has a third exposed surface 2331. The third exposed surface 2331 is a surface exposed in the y direction from the side surface 13 of the base material 1. The third exposed surface 2331 is substantially flush with the side surface 13. The third penetration portion 233 of the present embodiment has a semicircular shape when viewed in the z direction.

The common penetration portion 246 penetrates the base material 1. The common penetrating portion 246 is connected to the common extending portion 245 and the fourth mounting electrode 274, and overlaps with the common extending portion 245 and the fourth mounting electrode 274 when viewed in the z direction. As shown in FIGS. 1 and 2, in the present embodiment, the common penetrating portion 246 has a common exposed surface 2461. The common exposed surface 2461 is a surface exposed in the y direction from the side surface 13 of the base material 1. The common exposed surface 2461 is substantially flush with the side surface 13. The common penetration portion 246 of the present embodiment has a semicircular shape when viewed in the z direction.

The first element 3 is a light source in the light emitting and receiving device A1 and emits light in a predetermined wavelength band. The first element 3 is die-bonded to the first die bonding portion 211 and mounted on the main surface 11 of the base material 1. The first element 3 is, for example, an LED chip. The light emitted from the first element 3 is not particularly limited, and an example thereof is infrared light. The first element 3 of the present embodiment has the first electrode 31. The first electrode 31 is formed on the upper surface of the first element 3 in the z direction. The first element 3 has an electrode (not shown) formed on the lower surface in the z direction. The bonding of the first element 3 to the first die bonding portion 211 is performed by the first conductive bonding material 39. The first conductive bonding material 39 is Ag paste, solder, or the like, and electrically connects the electrode of the first element 3 to the first die bonding portion 211.

FIG. 13 shows an example of an LED chip as the first element 3. The first element 3 of the illustrated example includes a first electrode 31, a fourth electrode 32, a first substrate 311, a first metal layer 312, a first semiconductor layer 313, a second semiconductor layer 314, a light emitting layer 315, and a third electrode. It has a semiconductor layer 316. In addition, in this example, the case where the first electrode 31 is the n-side electrode and the fourth electrode is the p-side electrode will be described, but a configuration in which these are reversed may be used.

The first substrate 311 is composed of, for example, a silicon substrate. Of course, the first substrate 311 may be formed of a semiconductor substrate such as GaAs (gallium arsenide) or GaP (gallium phosphide). Although the first substrate 311 is formed in a substantially square shape in a plan view in this example, the planar shape of the first substrate 311 is not particularly limited and may be, for example, a rectangular shape in a plan view. The thickness of the first substrate 311 is, for example, about 150 μm.

The first metal layer 312 is formed so as to cover the first substrate 311. The first metal layer 312 is made of, for example, Au or an alloy containing Au. The first metal layer 312 may be a single layer of each of the Au layer and the Au alloy layer, or may be a layer in which a plurality of these layers and another metal layer are laminated. When the first metal layer 312 has a plurality of laminated structures, it may have a laminated structure represented by Au/AuBeNi/Au/Mo/Au/Mo/Au/Ti, for example. The thickness of the first metal layer 312 is, for example, about 0.5 μm.

The first semiconductor layer 313 is a p-type semiconductor layer in this example, and includes, for example, a p-type contact layer and a p-type window layer. The thickness of the first semiconductor layer 313 is, for example, about 1.5 μm.

The second semiconductor layer 314 is a p-type semiconductor layer in this example, and includes, for example, a p-type clad layer. The thickness of the second semiconductor layer first electrode 314 is, for example, about 0.8 μm.

The light emitting layer 315 has, for example, an MQW (multiple-quantum well) structure (multiple quantum well structure), and light is generated by recombination of electrons and holes, and the generated light is amplified. Layers.

The third semiconductor layer 316 is an n-type semiconductor layer in this example, and includes, for example, an n-type cladding layer, an n-type window layer, and an n-type contact layer. The thickness of the third semiconductor layer first electrode 316 is, for example, about 3.0 μm.

The first electrode 31 is an n-side electrode and is formed on the third semiconductor layer 316. The first electrode 31 is made of, for example, Au or an alloy containing Au. Specifically, it may be a laminated structure represented by Au/Ge/Ni/Au.

The fourth electrode 32 is a p-side electrode and is formed on the back surface of the first substrate 311. The fourth electrode 32 is made of, for example, Au or an alloy containing Au. Specifically, a laminated structure represented by )Ti/Au/Mo/Au may be used.

The second element 4 is an element that performs a photoelectric conversion function of generating an electric signal by receiving light in the wavelength band emitted from the first element 3. The second element 4 is used to detect the reflected light when the light emitted from the first element 3 is reflected by an external object. The second element 4 is die-bonded to the second bonding portion 212 and mounted on the main surface 11 of the base material 1. The second element 4 is, for example, a photodiode or a phototransistor, and the illustrated second element 4 is a photodiode. The second element 4 of the present embodiment has a second electrode 41 and a light receiving section 42. The second electrode 41 is formed on the upper surface of the second element 4 in the z direction. In the illustrated example, the second electrode 41 is arranged closer to the first element 3 in the x direction and closer to the common wire bonding portion 240 in the y direction. The light receiving portion 42 is provided in a region separated from the second electrode 41, and is a portion that receives light in the photoelectric conversion function. The second element 4 has an electrode (not shown) formed on the lower surface in the z direction. The second element 4 is bonded to the second bonding portion 212 by the second conductive bonding material 49. The second conductive bonding material 49 is Ag paste, solder or the like, and electrically connects the electrode of the second element 4 to the second bonding portion 212.

The third element 5 is an element that performs a photoelectric conversion function of generating an electric signal by receiving light in the wavelength band emitted from the first element 3. The third element 5 is used to detect, of the light emitted from the first element 3, the light that has not been emitted to the outside and has proceeded inside the light receiving/emitting device A1 (inside the sealing resin 7). The third element 5 is die-bonded to the third die-bonding portion 213 and mounted on the main surface 11 of the base material 1. The third element 5 is a photodiode or a phototransistor, for example, and the illustrated third element 5 is a photodiode. The third element 5 of the present embodiment has a third electrode 51 and a light receiving section 52. The third electrode 51 is formed on the upper surface of the third element 5 in the z direction. In the illustrated example, the third electrode 51 is arranged closer to the first element 3 in the x direction and closer to the common wire bonding portion 240 in the y direction. The light receiving portion 52 is provided in a region separated from the third electrode 51, and is a portion that receives light in the photoelectric conversion function. The third element 5 has an electrode (not shown) formed on the lower surface in the z direction. The third element 5 is joined to the third die bonding portion 213 by the third conductive joining material 59. The third conductive bonding material 59 is Ag paste, solder or the like, and connects the electrode of the third element 5 to the third die bonding portion 213.

The height H3 of the first element 3 in the z direction, the height H4 of the second element 4 in the z direction, and the height H5 of the third element 5 in the z direction shown in FIG. 6 can be set in various ways. All of H3 to H5 may be the same, all may be different from each other, or only two of them may be the same. In the illustrated example, the height H3 is lower than the heights H4 and H5. Further, the height H4 and the height H5 are the same height. The height H3 is, for example, about 0.10 mm, and the height H4 and the height H5 are, for example, about 0.13 mm.

The first wire 61 connects the first element 3 and the conductive portion 2 to each other. The first wire 61 is made of Au, for example. The first wire 61 is bonded to the first electrode 31 of the first element 3 and the common wire bonding portion 240 of the conductive portion 2. The bonding portion 611 is a portion of the first wire 61 that is bonded to the common wire bonding portion 240.

The second wire 62 electrically connects the second element 4 and the conductive portion 2. The second wire 62 is made of Au, for example. The second wire 62 is bonded to the second electrode 41 of the second element 4 and the common wire bonding portion 240 of the conductive portion 2. The bonding portion 621 is a portion of the second wire 62 that is bonded to the common wire bonding portion 240.

The third wire 63 connects the third element 5 and the conductive portion 2 to each other. The third wire 63 is made of Au, for example. The third wire 63 is bonded to the third electrode 51 of the third element 5 and the common wire bonding portion 240 of the conductive portion 2. The bonding portion 631 is a portion of the third wire 63 that is bonded to the common wire bonding portion 240.

As shown in FIG. 1, in the present embodiment, all of the bonding portion 611, the bonding portion 621, and the bonding portion 631 are regions (dimension y1) where the second bonding portion 212 and the third die bonding portion 213 exist in the y direction. Area). Further, all of the bonding portion 611, the bonding portion 621, and the bonding portion 631 are present in the area where the first die bonding portion 211 is present in the x direction (area of dimension x1).

As shown in the circuit diagram of FIG. 4, in the present embodiment, the first electrode 31 of the first element 3 is the cathode electrode of the first element 3, and the back electrode (not shown) is the anode electrode. The second electrode 41 of the second element 4 and the third electrode 51 of the third element 5 are anode electrodes, and the back electrodes (not shown) of the second element 4 and the third element 5 are cathode electrodes. As a result, the first mounting electrode 271 is electrically connected to the anode electrode of the first element 3, the second mounting electrode 272 is electrically connected to the cathode electrode of the second element 4, and the third mounting electrode 273 is connected to the third element 5. Is connected to the cathode electrode of. The fourth mounting electrode 274 has the first wire 61, the second wire 62, and the third wire 63 bonded to the common wire bonding portion 240, so that the cathode electrode of the first element 3 and the second element 4 It is electrically connected to the anode electrode of the third element 5. That is, the first element 3, the second element 4, and the third element 5 are connected in a relationship of opposite polarities.

The sealing resin 7 covers the first element 3, the second element 4, and the third element 5, and is formed on the main surface 11 of the base material 1. The sealing resin 7 is made of a material that transmits light in the wavelength band emitted from the first element 3, and is made of, for example, a translucent epoxy resin or silicone resin. The encapsulating resin 7 of the present embodiment has an emitting part 71, an incident part 72, a covering part 73, a first part 74 and a second part 75.

The emitting portion 71 is a surface for emitting light from the first element 3, and overlaps the first element 3 when viewed in the z direction. In the illustrated example, the emission part 71 is a smooth flat surface.

The incident section 72 is a surface that allows the light reflected by an external object to enter the third element 5. The incident portion 72 overlaps the second element 4 when viewed in the z direction. In the present embodiment, the incident part 72 is arranged side by side in the x direction with respect to the emitting part 71. In the illustrated example, the entrance 72 is a smooth flat surface.

The covering portion 73 is a surface located on the side opposite to the incident portion 72 with respect to the emitting portion 71 in the x direction. The covering portion 73 overlaps the third element 5 when viewed in the z direction. In the illustrated example, the covering portion 73 is a smooth flat surface.

The first portion 74 is located at the boundary of the covering portion 73 on the side of the emitting portion 71 and is a bent portion. In the illustrated example, as shown in FIG. 11, the first portion 74 has a first corner portion 741, a second corner portion 742 and a side surface 743. The side surface 743 is a surface located between the emitting portion 71 and the covering portion 73. In the illustrated example, the covering portion 73 is farther from the main surface 11 of the base material 1 in the z direction than the emitting portion 71. The side surface 743 is, for example, a surface parallel to the z direction. The first corner portion 741 includes the boundary between the covering portion 73 and the side surface 743. The angle formed between the covering portion 73 and the side surface 743 exceeds 180°, which is about 270° in the illustrated example. The second corner portion 742 includes the boundary between the side surface 743 and the emitting portion 71. The angle formed by the side surface 743 and the emitting portion 71 is about 90°.

The second portion 75 is located between the emitting portion 71 and the incident portion 72, and is a portion where the reflectance of light from the inside of the sealing resin 7 is lower than that of the emitting portion 71. In the illustrated example, the second portion 75 has a groove shape that is recessed from the emitting portion 71 and the incident portion 72 in the z direction. As shown in FIG. 10, the second portion 75 includes a groove portion 751 having a bottom surface 752 and a pair of side surfaces 753. The bottom surface 752 is a surface located at the back in the z direction. The pair of side surfaces 753 connect the emitting portion 71, the incident portion 72, and the bottom surface 752. In the illustrated example, the bottom surface 752 and the pair of side surfaces 753 are surfaces having a rougher surface than the emission portion 71 and the incidence portion 72. The second portion 75 is formed, for example, by forming a sealing resin 7 by curing a resin material and cutting a part of the sealing resin 7 with a blade or the like. When the second portion 75 is formed by a mold, only the bottom surface 752 is formed by a surface having a rough surface and the side surface 753 is formed by a smooth surface equivalent to the emitting portion 71 and the incident portion 72. Good.

As shown in FIG. 1, in the illustrated example, the second portion 75 overlaps the first die bonding portion 211 in the region R1 when viewed in the z direction. The second portion 75 overlaps the second bonding portion 212 in the region R2 in the z direction. In addition, the second portion 75 overlaps the first portion 74 in the region R3 when viewed in the z direction. In the regions R1, R2, and R3, the height H that is the distance between the bottom surface 752 and the first die bonding portion 211, the second bonding portion 212, and the common wire bonding portion 240 is the height between the bottom surface 752 and the main surface 11. Less than distance. The second portion 75 overlaps the second wire 62 when viewed in the z direction.

The light shielding layer 8 is made of a material having a light transmittance lower than that of the sealing resin 7, and is formed of, for example, black or dark color paint. The light shielding layer 8 covers the covering portion 73 of the sealing resin 7, and overlaps at least a part of the third element 5 when viewed in the z direction. In the illustrated example, the light shielding layer 8 overlaps all of the third elements 5 in the z direction. The material of the light-shielding layer 8 is, for example, a resist ink or an epoxy resin as a coatable material. As another material of the light shielding layer 8, an optical filter, an optical film or the like is exemplified as a material that can be formed by means such as adhesion.

As shown in FIG. 11, the light shielding layer 8 has an edge 80. The edge 80 coincides with the first portion 74, and in the example shown, coincides with the first corner portion 741 of the first portion 74. Further, the light shielding layer 8 has a curved surface 81. The curved surface 81 is connected to the edge 80 and is a convex curved surface. The curved surface 81 is formed when the coating material for forming the light shielding layer 8 is applied to the coating portion 73 of the sealing resin 7. The paint that is about to spread from the covering portion 73 has a large contact angle at the first corner portion 741 and is hardened in a state of being held by the action of the surface tension to form the curved surface 81. The light shielding layer 8 may not have the curved surface 81. Further, the edge 80 of the light shielding layer 8 does not have to match the first portion 74.

Next, the operation of the light emitting and receiving device A1 will be described.

According to the present embodiment, since the light shielding layer 8 is provided, it is possible to prevent the third element 5 from receiving the light traveling from the outside of the light emitting and receiving device A1. Thereby, it is possible to more accurately monitor the state of the first element 3 by the third element 5. Therefore, the light emitting and receiving device A1 can perform a more accurate detection function.

A third element 5 is provided in addition to the first element 3 and the second element 4. Of the light emitted from the first element 3, the third element 5 receives the light traveling in the sealing resin 7. Therefore, the detection signal of the third element 5 is unlikely to be affected by the external condition of the light emitting and receiving device A1, and reflects the state of the first element 3 itself such as aging. As a result, it is possible to continuously monitor the light emitting state of the first element 3. Therefore, by reflecting the detection result of the third element 5 in the processing of the detection signal of the second element 4, the light emitting and receiving device A1 can properly function in a longer period.

By providing the incident portion 72 on the sealing resin 7, the light shielding layer 8 can be formed more accurately in a desired region. In addition, the provision of the curved surface 81 of the light shielding layer 8 tends to result in a relatively thick configuration of the relevant portion of the light shielding layer 8. The large thickness of this portion is advantageous for enhancing the light shielding effect of the light shielding layer 8. Further, the configuration in which the light shielding layer 8 overlaps all the third elements 5 when viewed in the z direction is preferable in order to enhance the light shielding effect of the light shielding layer 8.

The second portion 75 has a rougher surface than the emitting portion 71 and the incident portion 72. By providing such a second portion 75, it is possible to prevent light emitted from the first element 3 from being reflected on the surface of the sealing resin 7 and being unintentionally received by the second element 4. can do. As a result, erroneous detection by the second element 4 can be suppressed.

Since the second portion 75 has the groove shape, the suppression of reflection by the second portion 75 can be promoted. In the illustrated example, the second portion 75 overlaps the first die bonding portion 211, the second bonding portion 212, and the common wire bonding portion 240 in the region R1, the region R2, and the region R3. In these areas, as shown in FIGS. 5 and 6, the height H, which is the distance between the bottom surface 752 and the first die bonding portion 211, the second bonding portion 212, and the common wire bonding portion 240, is equal to the bottom surface 752. It is smaller than the distance from the main surface 11. This means that the light emitted from the first element 3 narrows the path that travels in the sealing resin 7, and is preferable for suppressing unintended light reception by the second element 4.

As shown in FIG. 1, the second electrode 41 of the second element 4 is provided near the common wire bonding portion 240 in the x direction and the y direction. As a result, as shown in FIG. 5, the height of the second wire 62 in the z direction from the base material 1 is suppressed while avoiding the interference of the second wire 62 with the light receiving portion 42 of the second element 4. It is possible to This is preferable for thinning the light emitting and receiving device A1. Similarly, as shown in FIG. 1, the third electrode 51 is provided near the common wire bonding portion 240 in the x direction and the y direction. This makes it possible to suppress the height of the third wire 63 from the base material 1 in the z direction. This is preferable for thinning the light emitting and receiving device A1.

16 to 40 show another embodiment of the present disclosure. Note that, in these drawings, the same or similar elements as those in the above embodiment are denoted by the same reference numerals as those in the above embodiment.

<First Embodiment First Modification>
FIG. 16 is an enlarged sectional view of an essential part showing a first modified example of the light emitting and receiving device A1. In the light emitting and receiving device A11 of this modification, the angle α formed by the side surface 743 and the emitting portion 71 is larger than 90°. Such a configuration is advantageous, for example, for smoothly releasing the mold for forming the sealing resin 7 from the sealing resin 7.

<First Embodiment Second Modification>
FIG. 17 is an enlarged sectional view of an essential part showing a second modified example of the light emitting and receiving device A1. In the light emitting and receiving device A12 of the present modification, the emitting portion 71 is farther from the main surface 11 of the base material 1 than the covering portion 73 in the z direction. Then, the first portion 74 is configured to have a second corner portion 742, a side surface 743, and a first corner portion 741 from the covering portion 73 side. That is, the first corner portion 741 of this modified example is composed of the boundary between the side surface 743 and the emitting portion 71. The side surface 743 and the emitting portion 71 form an angle of more than 180° with each other, for example, about 270°. Even with such a modification, the paint for forming the light shielding layer 8 can be retained in the first corner portion 741 of the first portion 74, and the light shielding layer 8 can be formed more accurately in a desired region. can do.

It should be noted that when the sealing resin 7 is molded with a mold, the emitting portion 71 and the covering portion 73 may be formed at the same time, but the invention is not limited thereto. At the stage of molding with a die, the covering portion 73 is not formed, a flat surface is formed with the emitting portion 71, and then the region to be coated with the light shielding layer 8 is dug down by laser irradiation to form the covering portion 73. It may be formed.

<First Embodiment Third Modification>
FIG. 18 is an enlarged sectional view of an essential part showing a third modified example of the light emitting and receiving device A1. In the light emitting and receiving device A13 of this modification, the emitting part 71 and the covering part 73 are located at substantially the same position in the z direction. Further, the first portion 74 has a groove shape having a bottom surface 744, a pair of side surfaces 743, a pair of first corner portions 741 and a pair of second corner portions 742. The bottom surface 744 is a surface located at the back in the z direction. The pair of side surfaces 743 individually connect the bottom surface 744 to the emitting portion 71 and the incident portion 72. The pair of first corners 741 is configured by a boundary between the one side surface 743 and the emitting portion 71 and a boundary between the other side surface 743 and the covering portion 73.

Even with such a modification, the paint for forming the light shielding layer 8 can be retained in the first corner portion 741 of the first portion 74, and the light shielding layer 8 can be formed more accurately in a desired region. can do. Further, even when the first portion 74 has the pair of first corner portions 741 and the paint for forming the light shielding layer 8 is not retained by the first corner portion 741 on the left side in the drawing, The paint can be retained by the first corner portion 741 on the right side of the drawing as shown by the imaginary line in FIG.

<First Embodiment Fourth Modification>
FIG. 19 is an enlarged sectional view of an essential part showing a fourth modified example of the light emitting and receiving device A1. In the light emitting and receiving device A14 of the present modification, the emitting part 71 and the covering part 73 are located at substantially the same position in the z direction. The first portion 74 has a convex shape having a top surface 745, a pair of side surfaces 743, a pair of first corner portions 741 and a pair of second corner portions 742. The top surface 745 is a surface located at the highest position in the z direction. The pair of side surfaces 743 individually connect the top surface 745 to the emitting portion 71 and the incident portion 72. The pair of first corners 741 is formed by the boundary between the one side surface 743 and the top surface 745.

Even with such a modification, the paint for forming the light shielding layer 8 can be retained in the first corner portion 741 of the first portion 74, and the light shielding layer 8 can be formed more accurately in a desired region. can do. Further, even when the first portion 74 has the pair of first corner portions 741 and the paint for forming the light shielding layer 8 is not retained by the first corner portion 741 on the left side in the drawing, The paint can be retained by the first corner portion 741 on the right side of the drawing as shown by the imaginary line in FIG.

<First Embodiment Fifth Modification>
FIG. 20 is an enlarged sectional view of an essential part showing a fifth modified example of the light emitting and receiving device A1. In the light emitting and receiving device A15 of the present modification, the emitting part 71 and the covering part 73 are located at substantially the same position in the z direction. Further, the above-mentioned first portion 74 is not formed between the emitting portion 71 and the incident portion 72. In the present modification, when forming the light shielding layer 8, the material of the light shielding layer 8 is applied, for example, in a state where the region to be the emitting portion 71 is masked. Then, the light shielding layer 8 is obtained by removing the mask.

As can be understood from such a modified example, even if the sealing resin 7 does not have the first portion 74, the light shielding layer 8 is provided so as to expose the emitting portion 71 and cover the covering portion 73. As a result, a higher detection function can be achieved.

<Deformation regarding the light shielding layer>
1. As the light-shielding layer 8, a material having a light transmittance lower than that of the sealing resin 7 is used, but the material is not limited thereto. For example, a reflective film may be used as the light shielding layer 8. In this case, a metal material such as aluminum can be used as the reflective film, and the reflective film may be formed on the upper surface of the covering portion 73 by plating, for example.

2. The light shielding layer 8 may be formed by changing the quality of the sealing resin 7. This construction method will be described with reference to FIG. First, the sealing resin 7 is molded by molding without providing the covering portion 73. Then, a region of the surface of the sealing resin 7 where the light shielding layer 8 is to be formed is irradiated with a laser to change the quality of the transparent sealing resin 7 and reduce the transmittance. The alteration mechanism is not particularly limited, but a thermal reaction or an optical reaction may be used. The laser is preferably a UV laser.

Although the covering portion 73 is flat in FIGS. 17 and 19, it is not limited thereto. 51A and 51B are cross-sectional views of a light emitting and receiving device A1 including a light shielding layer according to a modification.

In FIGS. 51A and 51B, the covering portion 73 has a groove 76 in the first portion 74 close to the emitting portion 71, in other words, in the boundary portion between the first element 3 and the third element 5, and the groove 76. Is filled with the light shielding layer 8. In FIG. 51A, a groove 76 having a rectangular cross section is provided, and in FIG. 51B, a rounded groove 78 is formed. The grooves 76 and 78 can prevent the incident light L1 from the outside of the light emitting/receiving device A1 from entering the third element 5.

<First Embodiment Sixth Modification>
FIG. 21 shows a sixth modification of the light emitting and receiving device A1. In the light emitting and receiving device A16 of this modification, the second portion 75 is configured by the groove portion 751 having a curved surface. Even with such a configuration, it is possible to prevent light emitted from the first element 3 from being reflected on the surface of the sealing resin 7 and being unintentionally received by the second element 4.

<Seventh Modification of First Embodiment>
FIG. 22 shows a seventh modified example of the light emitting and receiving device A1. In the light emitting and receiving device A17 of the present modification, the second portion 75 is made of a flat rough surface and is not in the shape of a groove or a protrusion. Also in this modification, the second portion 75 has a rougher surface than the emitting portion 71 and the incident portion 72. Even with such a configuration, it is possible to prevent light emitted from the first element 3 from being reflected on the surface of the sealing resin 7 and being unintentionally received by the second element 4. Further, the effect of relaxing the stress concentration in the second portion 75 can be expected.

<First Embodiment Eighth Modification>
FIG. 23 shows an eighth modification of the light emitting/receiving device A1. In the light emitting and receiving device A18 of this modification, the second portion 75 overlaps with the first die bonding portion 211 in the region R1 when viewed in the z direction and overlaps with the common wire bonding portion 240 in the region R3, while the second bonding portion. It does not overlap with 212. Also in such a modification, the region R1 and the region R3 are set, so that the effect of suppressing unintended light reception of the third element 5 is enhanced.

<First Embodiment Ninth Modification>
FIG. 24 shows a ninth modification of the light emitting and receiving device A1. In the light emitting and receiving device A19 of this modification, the second portion 75 overlaps with the second bonding portion 212 in the region R2 when viewed in the z direction, while overlapping with the first die bonding portion 211 and the common wire bonding portion 240. Absent. Even in such a modification, the effect of suppressing unintended light reception of the third element 5 is enhanced by setting the region R2.

<First Modification of Tenth Embodiment>
25 to 27 show a tenth modified example of the light emitting and receiving device A1. In the light emitting and receiving device A1a of this modification, a VCSEL element is used as the first element 3.

As shown in FIG. 25, the first element 3 of this example is provided with the first electrode 31 and a plurality of light emitting regions 360 in a plan view. The first electrode 31 is arranged near the common wire bonding portion 240 in the y direction. The plurality of light emitting regions 360 are discretely arranged in a region excluding the first electrode 31 in a plan view of the first element 3.

As shown in FIG. 26 and FIG. 27, the first element 3 of this example includes the first electrode 31, the fourth electrode 32, the second substrate 351, the fourth semiconductor layer 352, the active layer 353, the fifth semiconductor layer 354, The current confinement layer 355, the insulating layer 356 and the conductive layer 357 are provided, and a plurality of light emitting regions 360 are formed. The configuration example shown in the figure is an example of the VCSEL element as the first element 3, and is not limited to this configuration. FIG. 27 is an enlarged view showing a portion including one light emitting region 360.

The second substrate 351 is made of a semiconductor. The semiconductor forming the second substrate 351 is, for example, GaAs. The semiconductor forming the second substrate 351 may be other than GaAs.

The active layer 353 is composed of a compound semiconductor that emits light having a wavelength of, for example, a 980 nm band (hereinafter, referred to as “λa”) by spontaneous emission and stimulated emission. The active layer 353 is located between the fourth semiconductor layer 352 and the fifth semiconductor layer 354.

The fourth semiconductor layer 352 is typically a DBR (Distributed Bragg Reflector) layer, and is formed on the second substrate 351. The fourth semiconductor layer 352 is made of a semiconductor having the first conductivity type. In this example, the first conductivity type is n-type. The fourth semiconductor layer 352 is configured as a DBR for efficiently reflecting the light emitted from the active layer 353. More specifically, the active layer 353 is formed by stacking a plurality of pairs of pairs of two AlGaAs layers each having a thickness λa/4 and having different reflectances.

The fifth semiconductor layer 354 is typically a DBR layer and is made of a semiconductor having the second conductivity type. In this example, the second conductivity type is p-type. Unlike the present embodiment, the first conductivity type may be p-type and the second conductivity type may be n-type. The fourth semiconductor layer 352 is located between the fifth semiconductor layer 354 and the second substrate 351. The fifth semiconductor layer 354 is configured as a DBR for efficiently reflecting the light emitted from the active layer 353. More specifically, the fifth semiconductor layer 354 is formed by stacking a plurality of pairs of pairs of two AlGaAs layers each having a thickness λa/4 and having different reflectances.

The current confinement layer 355 is located in the fifth semiconductor layer 354. The current confinement layer 355 is made of a layer containing a large amount of Al and easily oxidized. The current confinement layer 355 is formed by oxidizing this easily oxidized layer. The current confinement layer 355 does not necessarily have to be formed by oxidation, but may be formed by another method (for example, ion implantation). An opening 3551 is formed in the current constriction layer 355. A current flows through the opening 3551.

The insulating layer 356 is formed on the fifth semiconductor layer 354. The insulating layer 356 is made of, for example, SiO2. An opening 3561 is formed in the insulating layer 356.

The conductive layer 357 is formed on the insulating layer 356. The conductive layer 357 is made of a conductive material (for example, metal). The conductive layer 357 is electrically connected to the fifth semiconductor layer 354 through the opening 3561 of the insulating layer 356. The conductive layer 357 has an opening 3571.

The light emitting region 360 is a region where the light from the active layer 353 is emitted directly or after being reflected. In the present example, the light emitting region 360 has an annular shape in plan view, but the shape is not particularly limited. In the light emitting region 360, the fifth semiconductor layer 354, the current confinement layer 355, the insulating layer 356 and the conductive layer 357 described above are stacked, and the opening 3551 of the current constriction layer 355, the opening 3561 of the insulating layer 356 and the opening 3571 of the conductive layer 357 are stacked. And the like are provided. In the light emitting region 600, light from the active layer 353 is emitted through the opening 3571 of the conductive layer 357.

The first electrode 31 is made of, for example, a metal and is electrically connected to the fifth semiconductor layer 354. The fourth electrode 32 is formed on the back surface of the second substrate 351, and is made of, for example, a metal.

According to this modification, by using a VCSEL, which is a so-called surface light emitting device, as the first element 3, it is possible to increase the brightness and increase the irradiation area. As understood from this modification, the specific configuration of the first element 3 is not particularly limited as long as it has a light emitting function capable of realizing detection.

<Second Embodiment>
28 to 31 show a light emitting and receiving device according to the second embodiment of the present disclosure. FIG. 28 is a main-portion plan view showing the light-receiving and emitting device A2 of the present embodiment. FIG. 29 is a bottom view showing the light receiving and emitting device A2. FIG. 30 is a sectional view taken along line XXX-XXX in FIG. 31 is a cross-sectional view taken along line XXXI-XXXI of FIG. 28.

In the present embodiment, the common wire bonding section 240 has a common first section 241, a common second section 242, a common third section 243, and a common fourth section 244. The common first portion 241 is located between the first die bonding portion 211 and the third die bonding portion 213 in the x direction. In the illustrated example, the common first portion 241 has a shape that extends in the y direction. In the present embodiment, the bonding portion 611 of the first wire 61 and the bonding portion 631 of the third wire 63 are formed in the common first portion 241.

The common second portion 242 is arranged at a position separated from the first die bonding portion 211 in the y direction. Further, the common second portion 242 is arranged closer to the second bonding portion 212 side than the center of the first die bonding portion 211 in the x direction. In the illustrated example, the common second portion 242 has a substantially elliptical shape whose major axis is in the x direction. In the present embodiment, the bonding portion 621 of the second wire 62 is formed on the common second portion 242.

The common third portion 243 is connected to one end of the common first portion 241 in the y direction. The common first part 241 has a larger area than the common second part 242, and has a circular shape in the illustrated example. The common third portion 243 overlaps with the common penetrating portion 246 when viewed in the z direction. The common fourth part 244 connects the common second part 242 and the common third part 243. In the illustrated example, the common fourth portion 244 has a strip shape extending in the x direction.

In the present embodiment, the common wire bonding section 240 is L-shaped when viewed in the z direction. The first die bonding section 211 faces the common wire bonding section 240 on one side in the x direction and one side in the y direction, respectively. A recess 2111 is formed in the first die bonding section 211. The recessed portion 2111 is a portion of the first die bonding portion 211 that faces the common third portion 243 of the common wire bonding portion 240, and is recessed when viewed in the z direction.

As shown in FIG. 29, in the present embodiment, the conductive portion 2 has a first mounting electrode 271, a second mounting electrode 272, a third mounting electrode 273, and a fourth mounting electrode 274. The first mounting electrode 271, the second mounting electrode 272, the third mounting electrode 273, and the fourth mounting electrode 274 are all separated from the pair of side surfaces 13 and the pair of end surfaces 14 of the base material 1. In the present embodiment, the first penetrating part 231, the second penetrating part 232, the third penetrating part 233, and the common penetrating part 246 are formed in through holes penetrating the base material 1 and have a circular shape when viewed in the z direction. Is. In the illustrated example, the center line O231 passing through the center of the first penetrating part 231 and parallel to the x direction, the center line O232 passing through the center of the second penetrating part 232, and the third penetrating part are parallel to the x direction. The center line O233 passing through the center of the 233 and parallel to the x direction and the center line O246 passing through the center of the common penetrating portion 246 and parallel to the x direction are different in position in the y direction. Further, the center line O232 and the center line O233 have the same position in the y direction. However, the positional relationship of these center lines is not limited to the illustrated relationship.

In the illustrated example, the second portion 75 overlaps the first die bonding portion 211 and the second bonding portion 212 in the region R1 and the region R2 when viewed in the z direction, and does not overlap the common wire bonding portion 240. .. However, the second portion 75 may overlap the common wire bonding portion 240. The second portion 75 overlaps the second wire 62 when viewed in the z direction.

In the present embodiment, the light shielding layer 8 overlaps the common wire bonding section 240. Further, the light shielding layer 8 overlaps all of the common first portion 241 of the common wire bonding portion 240.

In the illustrated example, the second element 4 has a light receiving section 42. The light receiving portion 42 is provided in a region separated from the second electrode 41, and is a portion that receives light in the photoelectric conversion function. Further, the third element 5 has a light receiving section 52. The light receiving portion 52 is provided in a region separated from the third electrode 51, and is a portion that receives light in the photoelectric conversion function. Also in the above-described embodiment, the portions corresponding to the light receiving portion 42 and the light receiving portion 52 are provided in the second element 4 and the third element 5.

The bonding portion 611, the bonding portion 621, and the bonding portion 631 are all present in the region of the dimension y1 in the y direction. The first die bonding portion 211 overlaps with the bonding portion 621 and does not overlap with the bonding portions 611 and 631 when viewed in the y direction. The bonding portion 611 and the bonding portion 631 are located between the first element 3 and the third element 5 in the x direction.

Also according to this embodiment, a more highly accurate detection function can be achieved. Further, since the common first portion 241 of the common wire bonding portion 240 is arranged between the first element 3 and the third element 5, the distance between the first element 3 and the third element 5 is increased. There is. By providing the light-shielding layer 8 in this enlarged region, it is possible to prevent light that has traveled from the outside from unintentionally entering the third element 5.

<Third Embodiment>
32 to 37 show a light emitting and receiving device according to a third embodiment of the present disclosure. The light emitting and receiving device A3 of the present embodiment is different from the above-described embodiment mainly in the configuration of the conductive portion 2. FIG. 32 is a main-portion plan view showing the light-receiving and emitting device A3. FIG. 33 is a bottom view showing the light emitting and receiving device A3. 34 is a cross-sectional view taken along the line XXXIV-XXXIV in FIG. 32. FIG. 35 is a sectional view taken along line XXXV-XXXV in FIG. 36 is a sectional view taken along line XXXVI-XXXVI of FIG. FIG. 37 is a sectional view taken along line XXXVII-XXXVII in FIG.

As shown in FIG. 32, the conductive portion 2 of this embodiment includes a first die bonding portion 211, a second bonding portion 212, a third die bonding portion 213, a first wire bonding portion 25 1, and a second wire bonding portion 252. And a third wire bonding portion 253. These are formed on the main surface 11 of the base material 1.

The first wire bonding section 251 is arranged side by side on the one side in the y direction with respect to the first die bonding section 211. The second wire bonding portion 252 is arranged side by side on the one side in the y direction with respect to the second bonding portion 212. The third wire bonding portion 253 is arranged side by side on the one side in the y direction with respect to the third die bonding portion 213. The first wire bonding portion 251, the second wire bonding portion 252, and the third wire bonding portion 253 are all separated from the side surface 13 and the end surface 14. The shapes of the first wire bonding portion 251, the second wire bonding portion 252, and the third wire bonding portion 253 are not particularly limited, and are substantially rectangular in the illustrated example.

As shown in FIG. 33, the conductive portion 2 of the present embodiment includes a first mounting electrode 271, a second mounting electrode 272, a third mounting electrode 273, a fourth mounting electrode 274, a fifth mounting electrode 275, and a sixth mounting electrode. Has 276. These are formed on the back surface 12 of the base material 1.

The first mounting electrode 271, the second mounting electrode 272, and the third mounting electrode 273 are arranged side by side in the x direction. The fourth mounting electrode 274, the fifth mounting electrode 275, and the sixth mounting electrode 276 are arranged side by side in the x direction. The first mounting electrode 271, the second mounting electrode 272, the third mounting electrode 273, the fourth mounting electrode 274, the fifth mounting electrode 275, and the sixth mounting electrode 276 are all separated from the side surface 13 and the end surface 14. As shown in FIG. 32, the first mounting electrode 271, the second mounting electrode 272, the third mounting electrode 273, the fourth mounting electrode 274, the fifth mounting electrode 275, and the sixth mounting electrode 276 are the first when viewed in the z direction. The die bonding portion 211, the second bonding portion 212, the third die bonding portion 213, the first wire bonding portion 251, the second wire bonding portion 252, and the third wire bonding portion 253 are individually overlapped.

In the present embodiment, the conductive part 2 has a first penetrating part 231, a second penetrating part 232, a third penetrating part 233, a fourth penetrating part 261, a fifth penetrating part 262 and a sixth penetrating part 263. These penetrate the base material 1 in the z direction.

The first penetrating part 231 is connected to the first die bonding part 211 and the first mounting electrode 271. The second penetrating portion 232 is connected to the second bonding portion 212 and the second mounting electrode 272. The third penetrating part 233 is connected to the third die bonding part 213 and the third mounting electrode 273. The fourth penetrating portion 261 is connected to the first wire bonding portion 251 and the first mounting electrode 271. The fifth penetrating portion 262 is connected to the second wire bonding portion 252 and the second mounting electrode 272. The sixth penetrating portion 263 is connected to the third wire bonding portion 253 and the third mounting electrode 273. Further, in the illustrated example, a center line O231 passing through the center of the first penetrating portion 231 and parallel to the y direction, a center line O261 passing through the center of the fourth penetrating portion 261 and parallel to the y direction, and the second penetrating portion A center line O232 passing through the center of the portion 232 and a center line O275 passing through the center of the fifth mounting electrode 275 and a center line O275 passing through the center of the fifth mounting electrode 275 and a center line parallel to the y direction passing through the center of the third penetrating portion 233. The position in the x direction is different from the center line O276 that is parallel to the y direction and passes through the centers of O233 and the sixth mounting electrode 276. Further, the center line O232 and the center line O275 have the same position in the x direction. Further, the center line O233 and the center line O276 have the same position in the x direction. However, the positional relationship of these center lines is not limited to the illustrated relationship.

The first wire 61 is bonded to the first electrode 31 of the first element 3 and the first wire bonding portion 251. The second wire 62 is bonded to the second electrode 41 of the second element 4 and the second wire bonding portion 252. The third wire 63 is bonded to the third electrode 51 of the third element 5 and the third wire bonding portion 253. The center line O31 passing through the center of the first electrode 31 and parallel to the y direction and the center line O611 passing through the center of the bonding portion 611 and parallel to the y direction are different in position in the x direction from each other. However, the positional relationship of these center lines is not limited to the illustrated relationship.

The second portion 75 overlaps the first die bonding portion 211 and the second bonding portion 212 in the region R1 and the region R2 when viewed in the z direction, but the arrangement of the second portion 75 is not limited to this. As shown in FIG. 34, the second portion 75 has a bottom surface 752 and a pair of side surfaces 753. The bottom surface 752 is closer to the main surface 11 of the substrate 1 in the z direction than the top surfaces of the first element 3 and the second element 4 in the z direction, and is lower than the top surface of the second element 4 in the z direction by a height H′. It is in.

Also according to this embodiment, a more highly accurate detection function can be achieved. Further, as understood from the present embodiment, in the circuit configuration including the first element 3, the second element 4 and the third element 5, the first element 3, the second element 4 and the third element 5 properly function. If it does, the specific configuration is not limited at all. Further, the second portion 75 does not intersect with any of the first wire 61, the second wire 62, and the third wire 63 when viewed in the z direction. Thereby, when the second portion 75 has a groove shape, the second portion 75 can be formed to a deeper position. This is preferable to prevent the second element 4 from unintentionally receiving light.

<Fourth Embodiment>
FIG. 38 is a main-portion plan view showing the light-receiving and emitting device according to the fourth embodiment of the present disclosure. The light emitting and receiving device A4 of the present embodiment is different from the above-described embodiments in that the third element 5 and the light shielding layer 8 are not provided. The configurations of the first element 3 and the second element 4 and the relationship between the first element 3 and the second element 4 and the respective constituent elements of the conductive portion 2 are the same as those of the above-described light emitting and receiving device A3.

Further, in the illustrated example, a center line O231 passing through the center of the first penetrating portion 231 and parallel to the y direction, a center line O261 passing through the center of the fourth penetrating portion 261 and parallel to the y direction, and the second penetrating portion The center line O232 passing through the center of the portion 232 and parallel to the y direction and the center line O262 passing through the center of the fifth penetrating portion 262 and parallel to the y direction have different positions in the x direction. Further, the center line O232 and the center line O262 have the same position in the x direction. However, the positional relationship of these center lines is not limited to the illustrated relationship.

Also by such an embodiment, it is possible to prevent the light emitted from the first element 3 from being reflected on the surface of the sealing resin 7 and being unintentionally received by the second element 4.

<Fourth Embodiment First Modification>
FIG. 39 shows a first modification of the light emitting and receiving device A4. In the light emitting and receiving device A41 of the present modification, the conductive portion 2 has the common wire bonding portion 240. The first wire 61 and the second wire 62 are bonded to the common wire bonding section 240. The second portion 75 overlaps the second wire 62 when viewed in the z direction.

In the illustrated example, the center line O231 passing through the center of the first penetrating portion 231 and parallel to the y direction and the center line O246 passing through the center of the common penetrating portion 246 and parallel to the y direction are in the x direction. The positions are different from each other. However, the positional relationship of these center lines is not limited to the illustrated relationship.

<Fourth Embodiment Second Modification>
FIG. 40 shows a first modification of the light emitting and receiving device A4. In the light emitting and receiving device A42 of this modification, the common wire bonding portion 240 intersects the second portion 75 when viewed in the z direction, and is provided on both sides of the second portion 75 in the x direction. The bonding portion 611 and the bonding portion 621 are arranged on both sides of the second portion 75 in the x direction, respectively. The second portion 75 does not intersect the first wire 61 and the second wire 62 when viewed in the z direction.

In the illustrated example, the center line O231 passing through the center of the first penetrating part 231 and parallel to the y direction, the center line O246 passing through the center of the common penetrating part 246 and parallel to the y direction, and the second penetrating part. The center line O232 passing through the center of the 232 and parallel to the y direction and the center line O246 passing through the center of the common penetrating portion 246 are different in position in the x direction from each other. Further, the center line O232 and the center line O246 have the same position in the x direction. However, the positional relationship of these center lines is not limited to the illustrated relationship.

The light emitting and receiving device according to the present disclosure is not limited to the above embodiment. The specific configuration of each part of the light emitting and receiving device according to the present disclosure can be modified in various ways.

The partial configurations of the respective elements in the above-described embodiments and modified examples may be employed independently or in various combinations. As the partial configuration, for example, the presence/absence and specific configuration of the light shielding layer 8, the presence/absence of the first portion 74 and the specific configuration of the first portion 74, the presence/absence and specific configuration of the second portion 75, the base material 1 and the conductivity. The specific configuration of the part 2 and the like can be mentioned.

<Drive circuit>
Subsequently, a control circuit for driving the light emitting/receiving device according to the above-described embodiment or modification, or another light receiving/emitting device will be described.

FIG. 41 is a block diagram of the position detection system 800. The position detection system 800 generates a position detection signal P _DET indicating the position z of the object OBJ for position detection.

The position detection system 800 includes a light emitting/receiving device 810 and a control circuit 820. The light receiving and emitting device 810 includes a light emitting element 812, a first light receiving element PD1, and a second light receiving element PD2. The light emitted from the light emitting element 812 is applied to the object OBJ. Only light can be directly incident on the first light receiving element PD1 from the light emitting element 812, and the first light receiving element PD1 is shielded so that reflected light of the object OBJ does not enter. The output signal (detection current) of the first light receiving element PD1 does not depend on the position z of the object OBJ but depends on the output intensity of the light emitting element 812.

The control circuit 820 controls the light emitting and receiving device 810 and detects the position z of the object OBJ. The control circuit 820 includes a current driver 822, a sense amplifier 824, an error amplifier 826, and a sense amplifier 828.

The current driver 822 supplies a direct current drive current I _DRV to the light emitting element 812 to cause the light emitting element 812 to emit light with a brightness according to the drive current I _DRV .

The sense amplifier 824 generates the first detection signal Vs1 according to the output signal of the first light receiving element PD1. The first detection signal Vs1 represents the emission brightness of the light emitting element 812.

The target value S _REF of the emission brightness of the light emitting element 812 is input to the error amplifier 826. The error amplifier 826 feedback-controls the output I _DRV of the current driver 822 so that the first detection signal Vs1 approaches the target value S _REF .

Only the reflected light of the object OBJ can enter the second light receiving element PD2, and the amount of light received by the second light receiving element PD2 changes according to the position z of the object OBJ. That is, the output signal of the second light receiving element PD2 indicates the position z of the object OBJ. The sense amplifier 828 generates the second detection signal Vs2 according to the output signal of the second light receiving element PD2. Thus the control circuit 820 can output a position detection signal _{P DET} in response to the second detection signal Vs2.

42A is a diagram for explaining the operation of the position detection system 800 of FIG. The drive current I _DRV is stabilized to a target amount I _REF (for example, about 30 mA) according to the target value S _REF by feedback control by the 826 and the current driver 822, and the light emission brightness of the light emitting element 812 is also kept constant. When the position z of the object OBJ changes in this state, the amount of reflected light of the object OBJ incident on the second light receiving element PD2 changes, so the second detection signal Vs2 changes. FIG. 42B is a diagram showing the relationship between the position z and the second detection signal Vs2. The second detection signal Vs2 monotonously changes in a certain range z _{1 to} z ₂ of the position z, and therefore the second detection signal Vs2 can be associated with the position z in a one-to-one correspondence.

In the position detection system 800 of FIG. 41, the S/N ratio for position detection is determined according to the amount of drive current I _DRV . Therefore, in order to obtain a high S/N ratio, the drive current I _DRV may be increased, but if the drive current I _DRV is increased too much, power consumption will increase. Moreover, since the amount of heat generation increases, the cost of heat dissipation measures increases.

42(c) is a diagram for explaining another operation of the position detection system 800 of FIG. In this operation, the drive current I _DRV is turned on and off in a time division manner, and the position z of the object OBJ is detected during the detection period in which the drive current I _DRV is on. Since the current amount in the ON section can be increased while keeping the average amount of the drive current I _DRV small, the S/N ratio can be increased. However, since the position cannot be detected in the off section T _OFF of the drive current I _DRV , the temporal resolution is reduced.

Hereinafter, a control circuit and a control method that can obtain a high S/N ratio while keeping the drive current I _DRV small will be described.

FIG. 43 is a circuit diagram of a position detection system 800 including the control circuit 900 according to the embodiment. The position detection system 800 includes a light emitting/receiving device 810 and a control circuit 900. The configuration of the light emitting and receiving device 810 is the same as that of FIG.

The control circuit 900 includes a reference signal generator 910, a drive circuit 920, a correlation detector 930, a first detection circuit 940, and a second detection circuit 950, and is a functional IC integrated on one semiconductor substrate (chip, die). Is.

The control circuit 900 includes an output (OUT) pin, a ground (GND) pin, a feedback (PD1) pin, and a sense (PD2) pin. The OUT pin is connected to the anode pin (LED) of the light emitting element 812 of the light receiving and emitting device 810, the GND pin is grounded, and the PD1 pin is connected to the cathode pin PD(F) of the first light receiving element PD1 of the light receiving and emitting device 810. The second light receiving element PD2 pin is connected to the cathode pin PD(S) of the second light receiving element PD2 of the light receiving and emitting device 810.

The reference signal generator 910 generates a reference signal S _REF including a component of a predetermined reference frequency ω ₀ . The reference frequency f ₀ (=ω ₀ /2π) is preferably larger than 10 times the servo band. The first detection circuit 940 generates a first detection signal (feedback signal) S _FB according to the output current I _PD1 of the first light receiving element PD1. The second detection circuit 950 also generates a second detection signal S _DET according to the output current I _PD2 of the second light receiving element PD2. The first detection circuit 940 and the second detection circuit 950 may include an I/V converter (transimpedance amplifier) that converts a current signal into a voltage signal.

The drive circuit 920 generates the drive signal I _DRV so that the feedback signal S _FB corresponding to the output I _PD1 of the first light receiving element PD1 and the reference signal S _REF match, and supplies the drive signal I _DRV to the light emitting element 812. The drive circuit 920 includes a current driver 922 and a feedback circuit 924. The feedback circuit 924 adjusts the current driver 922 so that the error between the feedback signal S _FB and the reference signal S _REF approaches zero. As a result, the emission brightness of the light emitting element 812 changes according to the reference signal S _REF . When the feedback circuit 924 is implemented by an analog circuit, it can be formed by an error amplifier (op amp). When implemented by a digital circuit, a subtracter that generates an error between the feedback signal S _FB and the reference signal S _REF , a PI (proportional/integral) controller or a PID (proportional/integral/derivative) controller that processes the error. , Can be configured.

The correlation detector 930 performs the correlation detection of the second detection signal S _DET generated by the second detection circuit 950 using the component of the reference frequency ω ₀ included in the reference signal S _REF , and generates the position detection signal P _DET . ..

The above is the configuration of the control circuit 900. Next, the operation will be described.

FIG. 44 is a diagram for explaining the operation of the position detection system 800 of FIG. The reference signal S _REF has a waveform in which a sine wave having a predetermined frequency is superimposed on a DC baseline. The light emission luminance of the light emitting element 812 has a waveform corresponding to the reference signal S _REF by the feedback from the drive circuit 920.

In order to stabilize the feedback loop, it is desirable to operate the light emitting element 812 in a region where the linearity of the light emission luminance with respect to the drive current I _DRV is high. From this viewpoint, the light emitting element 812 is turned off when the drive current I _DRV falls below a certain threshold value. Therefore, it is preferable to generate the reference signal S _REF so that the bottom of the drive current I _DRV becomes non-zero, preferably higher than the light emission threshold value. For example, when the light emitting threshold of the light emitting element 812 is 0.5 mA, considering a margin, it may be a 1mA bottom of the drive current _{I DRV,} a range of 1mA~3mA driving current _{I DRV} as the center of 2mA You may change it. Note that this is about 1/10 of I _REF =30 mA in FIG. 42(a).

The light intensity I ₂ (t) incident on the second light receiving element PD2 can be expressed by the following formula.
I ₂ (t)=A(z)×I ₁ (t)
I ₁ (t) is the emission intensity of the light emitting element 812 and is represented by I ₁ =I ₀ +cos(ω ₀ t). A(z) is a modulation signal dependent on the position z, and the incident light intensity I ₂ (t) of the second light receiving element PD2 is grasped as an AM (amplitude modulation) wave whose carrier is cos(ω ₀ t). To be done. The f ₀ =ω ₀ /2π may be defined according to the servo band, and may be 10 times or more, and more preferably 20 times or more the servo band. When the servo band is 200 Hz, f ₀ =10 kHz may be set.

The correlation detector 930 performs the correlation detection of the second detection signal S _DET using the component of the predetermined reference frequency ω ₀ included in the reference signal S _DET and outputs the position detection signal P _DET indicating the amplitude modulation component A(z). To generate.

The above is the operation of the control circuit 900. According to the control circuit 900, by using the sine wave drive current _{I DRV,} thereby reducing the average value of the driving current _{I DRV.}

In addition, as shown in FIG. 44, noise N may be mixed into the second detection signal S _DET . In many cases, the frequency of the noise N is different from ω _0, and can be suitably removed by the correlation detector 930. According to this control circuit 900, the S/N ratio can be increased by utilizing the correlation detection.

From another point of view, the amount of drive current I _DRV required to obtain the same S/N ratio can be made smaller than in the past, and low power consumption can be achieved.

Further, the control circuit 900 has an advantage of high resistance to flicker noise. FIG. 45 is a diagram showing frequency characteristics of flicker noise. Flicker noise is also called 1/f noise, and its power is inversely proportional to the frequency f. The systems shown in FIGS. 42(a) and 42(b) operate in the region surrounded by the broken line in FIG. 45, and are therefore easily affected by flicker noise. On the other hand, in the present embodiment, the flicker noise can be reduced because the operation is performed in the frequency region surrounded by the solid line corresponding to the frequency f ₀ =ω ₀ /2π. Considering the reduction of flicker noise, it is desirable to bring the operating frequency f ₀ =ω ₀ /2π close to the 1/f corner frequency fc.

FIG. 46 is a circuit diagram showing an example of the control circuit 900. The control circuit 900 is composed of a hybrid of a front end analog circuit and a back end digital circuit.

The first detection circuit 940 and the second detection circuit 950 are configured by a transimpedance amplifier and include an operational amplifier OP1, a resistor R1, and a capacitor C1.

The reference signal generator 910 includes a waveform generator 912, a gain circuit 914, an offset circuit 916, and a D/A converter 918. Waveform generator 912 generates a sine wave sin .omega ₀ t and cosine wave cos .omega ₀ t having a predetermined frequency omega _0, whereas (cos .omega in this example ₀ t) is used to generate the reference signal _{S REF.} The gain circuit 914 sets the amplitude of the cosine wave cosω ₀ t. The offset circuit 916 adds the offset OFS1 to the cosine wave ω ₀ t, and the D/A converter 918 converts the output of the offset circuit 916 into an analog reference signal S _REF .

The drive circuit 920 includes a current output type operational amplifier OP2. The operational amplifier OP2 is a circuit in which the current driver 922 and the feedback circuit 924 of FIG. 43 are integrated, and its output current I _DRV is adjusted so that the error between the feedback signal S _FB and the reference signal S _REF approaches zero. ..

The correlation detector 930 includes a low-pass filter 932, an A/D converter 934, a subtractor 936, a gain circuit 938, a multiplier 960, a multiplier 962, a filter 964, and a calculator 966. The low-pass filter 932 is an anti-aliasing filter, and removes unnecessary frequency band components (1/2 or more times the sampling frequency) from the second detection signal S _DET . The A/D converter 934 converts the output of the low-pass filter 932 into a detection signal D _DET having a digital value. The offset circuit 936 subtracts the offset OFS2 from the detection signal D _DET . The gain circuit 938 multiplies the output of the offset circuit 936 by a gain. Multipliers 960 and 962, respectively, multiplied by the cosine wave cos .omega ₀ t, sine wave sin .omega ₀ t at the output of the gain circuit 938. The filter 964 extracts the DC components α and β of the outputs of the multipliers 960 and 962, respectively. The calculator 966 calculates √(α ² +β ² ) and outputs it as the position detection signal P _DET . √(α ² +β ² ) represents the amplitude component A(z).

Those skilled in the art will understand that the configuration of the control circuit 900 is not limited to that of FIG.
Modification 1. For example, the control circuit 900 may be implemented as a full analog circuit.
Modification 2. Regarding the drive circuit 920, the current driver 922 may be configured by a digital current DAC and the current driver 922 may be configured by a digital feedback controller.

A preferred embodiment of the control circuit 900, the pin arrangement of the light emitting and receiving device 810, and the layout of the position detection system 800 will be described.

FIG. 47 is a diagram showing the pin arrangement of the light emitting/receiving device 810 and the control circuit 900 according to the embodiment.

The pin arrangement of the light emitting and receiving device 810 will be described. The first light receiving element PD1 directly receives the emitted light of the light emitting element 812, while the second light receiving element PD2 receives the reflected light of the object OBJ. Therefore, the signal strength of the second detection signal I _PD2 generated by the second light receiving element PD2 is weak, and it can be said that the noise resistance of the PD(S) pin is low. Therefore, it is preferable to minimize the mixing of noise into the PD(S) pin, and it is particularly effective to reduce the coupling between the first detection current I _PD1 and the second detection current I _PD2 as much as possible.

Regarding the pin arrangement of the light emitting and receiving device 810, a GND pin is inserted between PD(F) and PD(S). Further, an LED pin is inserted between the PD(F) pin and the PD(S) pin, and the PD(F) pin and the PD(S) pin are placed farthest from each other.

The control circuit 900 is an 8-pin package, and the control circuit 900 and the light emitting and receiving device 810 are arranged such that their long sides are parallel to each other. PD1, GND, OUT, and PD2 to be connected to the PD(F), GND, LED, and PD(S) pins of the light emitting/receiving device 810 are arranged along one side E1 facing the light receiving/emitting device 810 when mounted. doing. Thereby, the wiring distance between the corresponding pins can be set to the end.

A pin for communication with the host processor, a power supply pin VCC, and the like are assigned to another side E2 of the control circuit 900. Communication pins include, for example, a clock (SCL) pin and a data (SDA) pin in the case of an I ² C (Inter IC) interface.

The control circuit 900 and the light emitting and receiving device 810 are mounted on a printed board. In the figure, PTN1 to PTN4 indicate wiring patterns on the printed circuit board. The ground pattern PTN1 is a pattern for ground and includes a first portion PTN1a that connects the GND pin of the control circuit 900 and the GND pin of the light emitting and receiving device 810.

The pattern PTN2 connects the PD(F) pin of the light emitting/receiving device 810 and the PD1 pin of the control circuit 900. The pattern PTN3 connects the LED pin of the light emitting and receiving device 810 and the OUT pin of the control circuit 900. The pattern PTN4 connects the PD(S) pin of the light emitting/receiving device 810 and the PD2 pin of the control circuit 900.

The ground pattern PTN1 includes a second portion PTN1b that separates the OUT pin from the PD2 pin. Further, the ground pattern PTN1 includes a third portion PTN1c that separates the GND pin and the PD1 pin. Further, the ground pattern PTN1 includes a pin group (PD1, GND, OUT, PD2) along the long side E1 and a fourth portion PTN1d separating the pin group along the long side E2. Thereby, undesired crosstalk can be suppressed and the S/N ratio can be improved.

FIG. 48 is a diagram showing the pin arrangement of the light emitting/receiving device 810 and the control circuit 900 according to the embodiment. The pin arrangement of the light emitting and receiving device 810 is the same as in FIG. In the control circuit 900, the PD1 pin and the PD2 pin are provided on different long sides E1 and E2. In this example, OUT, PD1, and GND pins are provided along the first long side E1, and the remaining pins including the PD2 pin are provided along the second long side E2. Similar to FIG. 47, the ground pattern PTN1 includes a portion PTN1d that separates the pin group along the first side E1 and the pin group along the second side E2. This can prevent noise from entering the PD2 pin.

Further, the pattern PTN4 in which the weak current signal I _PD2 propagates and the pattern PTN2 (PTN3) in which the current signal I _PD1 (or I _DRV ) that can be a noise source propagates are separated by the first portion PTN1a of the ground pattern PTN1. Therefore, the S/N ratio can be improved.

FIG. 49 is a diagram showing the pin arrangement of the light emitting/receiving device 810 and the control circuit 900 according to the embodiment. The pin arrangement of the light emitting and receiving device 810 is the same as in FIG. Also in this embodiment, the PD1 pin and the PD2 pin are provided on different long sides E1 and E2. In this example, the PD1 and GND pins are provided along the first long side E1, and the PD2 pin and the OUT pin are provided along the second long side E2. Similar to FIG. 48, the ground pattern PTN1 includes a portion PTN1d that separates the pin group along the first side E1 and the pin group along the second side E2. This can prevent noise from entering the PD2 pin.

The ground pattern PTN1 also includes a portion PTN1b that separates the PD2 pin and the OUT pin. As a result, noise from the OUT pin through which the drive signal I _DRV flows to the PD2 pin can be shielded and the S/N ratio can be improved.

(Use)
The usage of the position detection system 800 will be described. The position detection system 800 can be used in a positioning system. FIG. 50 is a block diagram of positioning system 700. For example, the positioning system 700 can be mounted on an electronic device with a camera and used for positioning the lens 702. The lens 702 is provided on the incident optical path to the image sensor 703.

The positioning system 700 includes a lens 702 that is an object OBJ, an actuator 704 that positions the lens 702, and an actuator driver 710 that controls the actuator 704.

The lens 702 to be positioned may be an AF lens, and in this case, the actuator driver 710 positions the lens 702 in the z-axis direction. The position detection system 800 including the light emitting and receiving device 810 and the control circuit 900 detects the position of the lens 702 in the z-axis direction.

The lens 702 may be a lens for camera shake correction. In this case, the actuator driver 710 positions the lens 702 in the x-axis direction (or the y-axis direction). The position detection system 800 including the light emitting and receiving device 810 and the control circuit 900 detects the position of the lens 702 in the x-axis direction (or the y-axis direction).

The actuator driver 710 includes a drive circuit 720, a feedback controller 730, and the control circuit 900 described above. The control circuit 900 generates a position detection signal P _DET indicating the position of the lens 702. A signal P _REF indicating the target position of the lens 702 is given to the actuator driver 710 from an external processor. The feedback controller 730 generates a drive control signal so that the error between the position detection signal P _DET and the position target signal P _REF approaches zero. The drive circuit 720 supplies a drive current according to the drive control signal to the actuator 704.

In the conventional AF system and OIS (camera shake correction) system, a magnetic means is used to detect the position of the lens 702, but since a weak magnetic signal is used, the S/N ratio is low, and the influence of variations is also caused. There was a problem that it was easy to receive. Alternatively, by using the position detection system 800 according to this embodiment, the position of the lens 702 can be detected accurately at high speed and the control speed of AF and OIS can be increased.

Note that the use of the position detection system 800 is not limited to lens positioning.

[Appendix 1]
Base material,
A conductive portion formed on the base material,
A first element mounted on the base material and emitting light;
A second element that is mounted on the base material and receives light emitted from the first element;
A sealing resin which covers the first element and the second element and transmits the light emitted from the first element,
The first element and the second element are arranged apart from each other in a first direction that is perpendicular to the thickness direction of the base material,
A third element which is arranged on the opposite side of the second element with the first element sandwiched in the first direction and which receives light from the first element;
A light emitting and receiving device, comprising: a light shielding layer formed of a material of the sealing resin, which is overlapped with the third element when viewed in the thickness direction, and has a light transmittance lower than that of the sealing resin.
[Appendix 2]
The light emitting and receiving device according to appendix 1, wherein the light shielding layer overlaps all of the third elements when viewed in the thickness direction.
[Appendix 3]
3. The light emitting and receiving device according to appendix 1 or 2, wherein the covering portion is a flat surface.
[Appendix 4]
The conductive portion has a third die bonding portion on which the third element is mounted,
4. The light emitting and receiving device according to any one of appendices 1 to 3, wherein the light shielding layer overlaps the third die bonding portion when viewed in the thickness direction.
[Appendix 5]
Any of Appendices 1 to 4, wherein the sealing resin has an emitting portion that emits light from the first element and a first portion that is located at a boundary of the covering portion on the emitting portion side. The light emitting and receiving device as described in 1.
[Appendix 6]
6. The light emitting and receiving device according to appendix 5, wherein the light shielding layer has an edge matching the first portion.
[Appendix 7]
7. The light emitting and receiving device according to appendix 6, wherein the light shielding layer has a convex curved surface connected to the edge.
[Appendix 8]
8. The light emitting and receiving device according to any one of appendices 5 to 7, wherein the first portion includes a first corner portion that is a boundary between surfaces that form an angle of more than 180°.
[Appendix 9]
The light emitting and receiving device according to appendix 8, wherein the first part includes a plurality of the first corners.
[Appendix 10]
The sealing resin is located between the emitting portion that emits the light from the first element, the incident portion that allows the light to enter the second element, and the emitting portion and the incident portion. The light emitting and receiving device according to appendix 1, further comprising: a second portion having a light reflectance lower than that of the emitting portion.
[Appendix 11]
The conductive portion has a first die bonding portion on which the first element is mounted and a second bonding portion on which the second element is mounted,
11. The light emitting and receiving device according to appendix 10, wherein the second portion overlaps at least one of the first die bonding portion and the second bonding portion when viewed in the thickness direction.
[Appendix 12]
12. The light emitting and receiving device according to appendix 11, wherein the second portion overlaps both the first die bonding portion and the second bonding portion when viewed in the thickness direction.
[Appendix 13]
A second wire connected to the second element,
The conductive portion has a wire bonding portion to which the second wire is bonded,
13. The light emitting and receiving device according to any one of appendices 10 to 12, wherein the second portion overlaps the second wire when viewed in the thickness direction.
[Appendix 14]
14. The light emitting and receiving device according to appendix 13, wherein the second portion overlaps with the wire bonding portion when viewed in the thickness direction.
[Appendix 15]
15. The light emitting and receiving device according to any one of appendices 10 to 14, wherein the second portion has a groove shape that is recessed in the thickness direction from the emitting portion and the incident portion.
[Appendix 16]
16. The light emitting and receiving device according to any one of appendices 10 to 15, wherein the second portion is a surface that is rougher than the emitting portion and the incident portion.
[Appendix 17]
17. The light emitting and receiving device according to any one of appendices 10 to 16, wherein the second portion reaches both ends of the sealing resin in a second direction that is perpendicular to the thickness direction and the first direction.

A1, A11, A12, A13, A14, A16, A17, A18, A19, A1a, A2, A3, A4, A41, A42: Light emitting/receiving device 1: Base material 2: Conductive part 3: First element 4: Second Element 5: Third element 7: Sealing resin 8: Light-shielding layer 10: Substrate material 11: Main surface 12: Back surface 13: Side surface 14: End surface 31: First electrode 32: Fourth electrode 39: First conductive bonding material 41 : Second electrode 42: light receiving part 49: second conductive bonding material 51: third electrode 52: light receiving part 59: third conductive bonding material 61: first wire 62: second wire 63: third wire 71: emitting part 72: incident part 73: coating part 74: first part 75: second part 80: edge 81: curved surface 211: first die bonding part 212: second bonding part 213: third die bonding part 221: first extension Output part 222: Second extension part 223: Third extension part 231: First penetrating part 232: Second penetrating part 233: Third penetrating part 240: Common wire bonding part 241: Common first part 242: Common first 2nd part 243: common 3rd part 244: common 4th part 245: common extension part 246: common penetration part 251: 1st wire bonding part 252: 2nd wire bonding part 253: 3rd wire bonding part 261: 4th Penetration part 262: Fifth penetration part 263: Sixth penetration part 271: First mounting electrode 272: Second mounting electrode 273: Third mounting electrode 274: Fourth mounting electrode 275: Fifth mounting electrode 276: Sixth mounting electrode 276 311: first substrate 312: first metal layer 313: first semiconductor layer 314: second semiconductor layer first electrode 314: second semiconductor layer 315: light emitting layer 316: third semiconductor layer 316: third semiconductor layer first Electrode 351: Second substrate 352: Fourth semiconductor layer 353: Active layer 354: Fifth semiconductor layer 355: Current constriction layer 356: Insulating layer 357: Conductive layer 360: Light emitting region 611, 621, 631: Bonding portion 741: Bonding portion 741: First corner 742: Second corner 743: Side surface 744: Bottom surface 745: Top surface 751: Groove portion 752: Bottom surface 753: Side surface 2111: Recessed portion 2310: Through hole 2311: First exposed surface 2312: Bottom surface 2313: Top surface 2321: Second exposed surface 2331: Third exposed surface 2461: Common exposed surface 3551, 3561, 3571: Openings H, H', H3, H4, H5: Heights O231, O232, O233, O246, O261, O 262, O275, O276, O31, O611: Center lines R1, R2, R3: Regions x1, y1: Dimension α: Angle 800: Position detection system OBJ: Object 802: Actuator 810: Light emitting/receiving device 812: Light emitting element PD1: First light receiving element PD2: Second light receiving element 820: Control circuit 822: Current driver 824: Sense amplifier 826: Error amplifier 828: Sense amplifier 900: Control circuit 910: Reference signal generator 912: Waveform generator 914: Gain circuit 916 : Offset circuit 918 :D/A converter 920 :Drive circuit 922 :Current driver 924 :Feedback circuit 930 :Correlation detector 932 :Low pass filter 934 :A/D converter 936 :Offset circuit 938 :Gain circuit 960 :Multiplier 962: Multiplier 964: filter 966: calculator 940: first detection circuit 950: second detection circuit

Claims (16)

A control circuit for a light emitting and receiving device including a light emitting element, a first light receiving element and a second light receiving element,
A reference signal generator for generating a reference signal including a component of a predetermined reference frequency;
A drive circuit that supplies a drive signal to the light emitting element so that the feedback signal corresponding to the output of the first light receiving element and the reference signal match.
A detection circuit that performs correlation detection on the output of the second light receiving element using the component of the reference frequency;
A control circuit comprising: The control circuit according to claim 1, wherein the level of the drive signal is defined in a range in which the brightness of the light emitting element is non-zero. The control circuit according to claim 1, wherein the reference frequency is greater than 10 times a servo band. A first detection circuit including a first transimpedance amplifier for converting the output of the first light receiving element into the feedback signal of a voltage signal;
A second detection circuit including a second transimpedance amplifier for converting an output current of the second light receiving element into a voltage signal;
The control circuit according to claim 1, further comprising: The driving circuit includes an operational amplifier in which a non-inverting input terminal receives the reference signal, an inverting input terminal receives the feedback signal, and a capacitor is connected between an output terminal and the inverting input terminal. 5. The control circuit according to any one of items 1 to 4. The control circuit according to claim 1, wherein the drive circuit is configured to be able to adjust the DC level of the reference signal. The detection circuit is
An A/D converter for converting the voltage signal into a digital value,
An offset circuit for giving an offset to the output of the A/D converter,
Two multipliers that multiply the output of the offset circuit by a sine wave and a cosine wave having the reference frequency;
An arithmetic unit that processes the outputs of the two multipliers;
The control circuit according to claim 4, further comprising: The control circuit is
An output pin to be connected to the light emitting device,
A first pin to be connected to the first light receiving element,
A second pin to be connected to the second light receiving element,
A ground pin to be grounded,
Have
8. The control circuit according to claim 1, wherein the first pin and the second pin are provided so as not to be adjacent to the same side of the package of the control circuit. The control circuit is
An output pin to be connected to the light emitting device,
A first pin to be connected to the first light receiving element,
A second pin to be connected to the second light receiving element,
A ground pin to be grounded,
Have
8. The control circuit according to claim 1, wherein the first pin and the second pin are provided on different sides facing each other of a package of the control circuit. A light emitting and receiving device,
A control circuit according to any one of claims 1 to 9,
Equipped with
The light emitting and receiving device,
Base material,
A conductive portion formed on the base material,
A first element mounted on the base material and emitting light;
A second element that is mounted on the base material and receives light emitted from the first element;
A sealing resin which covers the first element and the second element and transmits the light emitted from the first element,
The first element and the second element are arranged apart from each other in a first direction that is perpendicular to the thickness direction of the base material,
A third element which is arranged on the opposite side of the second element with the first element sandwiched in the first direction and which receives light from the first element;
A position detection device, comprising: a light-shielding layer formed of a material of the sealing resin that overlaps the third element when viewed in the thickness direction and has a light transmittance lower than that of the sealing resin. The position detection device according to claim 10, wherein the light shielding layer overlaps all of the third elements when viewed in the thickness direction. The position detecting device according to claim 10, wherein the covering portion is a flat surface. The conductive portion has a third die bonding portion on which the third element is mounted,
The position detection device according to claim 10, wherein the light shielding layer overlaps the third die bonding portion when viewed in the thickness direction. 14. The encapsulating resin has an emitting portion that emits light from the first element and a first portion that is located at a boundary of the covering portion on the emitting portion side. The position detection device according to any one of claims. An image sensor,
A lens provided on the incident optical path of the image sensor,
An actuator for positioning the lens,
An actuator driver for controlling the actuator,
A light emitting and receiving device,
Equipped with
The image pickup device, wherein the actuator driver includes the control circuit according to any one of claims 1 to 9, which controls the light receiving and emitting device. A method for controlling a light emitting and receiving device including a light emitting element, a first light receiving element and a second light receiving element,
Generating a reference signal containing a predetermined frequency component;
Feedback controlling a drive signal supplied to the light emitting element so that the output of the first light receiving element approaches the reference signal;
Correlating the output of the second light receiving element with the reference signal;
A control method comprising:

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