JP2020084239A - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
- Publication number
- JP2020084239A JP2020084239A JP2018217282A JP2018217282A JP2020084239A JP 2020084239 A JP2020084239 A JP 2020084239A JP 2018217282 A JP2018217282 A JP 2018217282A JP 2018217282 A JP2018217282 A JP 2018217282A JP 2020084239 A JP2020084239 A JP 2020084239A
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- Prior art keywords
- vacuum chamber
- plate
- vacuum
- deposition
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000009489 vacuum treatment Methods 0.000 title abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000005855 radiation Effects 0.000 claims abstract description 25
- 230000002265 prevention Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 36
- 230000008021 deposition Effects 0.000 description 35
- 238000004544 sputter deposition Methods 0.000 description 28
- 239000010408 film Substances 0.000 description 21
- 239000007789 gas Substances 0.000 description 18
- 239000002245 particle Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 10
- 230000003449 preventive effect Effects 0.000 description 10
- 239000003507 refrigerant Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000002401 inhibitory effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (3)
- 真空チャンバを有してこの真空チャンバ内にセットされた被処理基板に対して所定の真空処理を施す真空処理装置であって、真空チャンバ内に防着板が設けられるものにおいて、
防着板の部分に隙間を存して対向配置される放射冷却板を備え、放射冷却板が、真空チャンバの冷却部にヒートパイプを介して接続されることを特徴とする真空処理装置。 - 前記冷却部が、前記真空チャンバの内壁面に立設した金属製のブロック体で構成されることを特徴とする請求項1記載の真空処理装置。
- 前記ヒートパイプが、SUS製の保護管に内挿されることを特徴とする請求項1または請求項2記載の真空処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018217282A JP7290413B2 (ja) | 2018-11-20 | 2018-11-20 | 真空処理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018217282A JP7290413B2 (ja) | 2018-11-20 | 2018-11-20 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020084239A true JP2020084239A (ja) | 2020-06-04 |
JP7290413B2 JP7290413B2 (ja) | 2023-06-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2018217282A Active JP7290413B2 (ja) | 2018-11-20 | 2018-11-20 | 真空処理装置 |
Country Status (1)
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JP (1) | JP7290413B2 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09228032A (ja) * | 1996-02-20 | 1997-09-02 | Idemitsu Kosan Co Ltd | 真空蒸着装置およびその真空蒸着装置を用いた真空蒸着方法 |
JP2007146260A (ja) * | 2005-11-30 | 2007-06-14 | Pooraito Kk | 含窒素化合物混合金属摺動部材 |
JP2007146290A (ja) * | 2005-10-31 | 2007-06-14 | Applied Materials Inc | 基板処理チャンバのためのプロセスキット及びターゲット |
JP2008170136A (ja) * | 2007-01-11 | 2008-07-24 | Ts Heatronics Co Ltd | 2重外壁ヒートパイプ及びその製造方法 |
-
2018
- 2018-11-20 JP JP2018217282A patent/JP7290413B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09228032A (ja) * | 1996-02-20 | 1997-09-02 | Idemitsu Kosan Co Ltd | 真空蒸着装置およびその真空蒸着装置を用いた真空蒸着方法 |
JP2007146290A (ja) * | 2005-10-31 | 2007-06-14 | Applied Materials Inc | 基板処理チャンバのためのプロセスキット及びターゲット |
JP2007146260A (ja) * | 2005-11-30 | 2007-06-14 | Pooraito Kk | 含窒素化合物混合金属摺動部材 |
JP2008170136A (ja) * | 2007-01-11 | 2008-07-24 | Ts Heatronics Co Ltd | 2重外壁ヒートパイプ及びその製造方法 |
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JP7290413B2 (ja) | 2023-06-13 |
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