JP2020035738A - 発光装置及びバックライトモジュール - Google Patents
発光装置及びバックライトモジュール Download PDFInfo
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- 230000003287 optical effect Effects 0.000 claims abstract description 64
- 239000000853 adhesive Substances 0.000 claims abstract description 47
- 230000001070 adhesive effect Effects 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims description 48
- 238000006243 chemical reaction Methods 0.000 claims description 41
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 10
- -1 polyethylene terephthalate Polymers 0.000 claims description 9
- 238000001228 spectrum Methods 0.000 claims description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 239000004743 Polypropylene Substances 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 229920002284 Cellulose triacetate Polymers 0.000 claims description 3
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 claims description 3
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 33
- 239000012788 optical film Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 239000002096 quantum dot Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/38—Combination of two or more photoluminescent elements of different materials
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133606—Direct backlight including a specially adapted diffusing, scattering or light controlling members
- G02F1/133607—Direct backlight including a specially adapted diffusing, scattering or light controlling members the light controlling member including light directing or refracting elements, e.g. prisms or lenses
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Planar Illumination Modules (AREA)
- Optical Elements Other Than Lenses (AREA)
- Led Device Packages (AREA)
Abstract
Description
110 回路基板
120 発光ダイオード
130 光学接着剤
140 光透過性フィルム
X、Y 方向
D 距離
150 波長変換層
250 波長転換物質
160 光学パターン群
161 中心
162 反射パターン
800 ディスプレイ
810 表示パネル
820 バックライトモジュール
Claims (15)
- 回路基板と、
前記回路基板の表面に設けられる複数の発光ダイオードと、
前記複数の発光ダイオードを被覆するように、前記回路基板の前記表面に設けられる光学接着剤と、
前記光学接着剤の前記回路基板から離れる側に設けられ、硬度が前記光学接着剤の硬度より大きい光透過性フィルムと、
を含むものであることを特徴とする発光装置。 - 前記光透過性フィルムの屈折率が前記光学接着剤の屈折率より大きいものであることを特徴とする請求項1に記載の発光装置。
- 前記光透過性フィルムの材料は、ポリエチレンテレフタレート、ポリカーボネート、ポリメチルメタアクリレート、三酢酸セルロース及びポリプロピレンの少なくとも1つを含むものであることを特徴とする請求項1又は請求項2に記載の発光装置。
- 前記光透過性フィルムの前記光学接着剤から離れる表面から前記回路基板までの距離が1.5mmより小さいものであることを特徴とする請求項1から請求項3のいずれか一項に記載の発光装置。
- 前記複数の発光ダイオードは、青色光を発するものであることを特徴とする請求項1から請求項4のいずれか一項に記載の発光装置。
- 前記光透過性フィルムの前記光学接着剤から離れる側に設けられ或いは前記光学接着剤と前記光透過性フィルムとの間に設けられ、青色光の一部を吸収して少なくとも1つの青色光と異なる波長光を発する波長変換層を更に含むものであることを特徴とする請求項5に記載の発光装置。
- 前記波長変換層は、主峰の波長が黄色スペクトルの範囲内にある第1の波長転換物質を含むものであることを特徴とする請求項6に記載の発光装置。
- 前記波長変換層は、主峰の波長が緑色スペクトルの範囲内にある第2の波長転換物質及び主峰の波長が赤色スペクトルの範囲内にある第3の波長転換物質を含むものであることを特徴とする請求項6に記載の発光装置。
- 前記複数の発光ダイオードは、発光ダイオードチップ、サブミリ発光ダイオードチップ、マイクロ発光ダイオードチップ又は発光ダイオードパッケージであることを特徴とする請求項1から請求項8のいずれか一項に記載の発光装置。
- 前記発光ダイオードに位置する第4の波長転換物質を更に含むものであることを特徴とする請求項1から請求項5のいずれか一項に記載の発光装置。
- 前記光学接着剤又は前記光透過性フィルムの中に分布される第5の波長転換物質を更に含むものであることを特徴とする請求項1から請求項5のいずれか一項に記載の発光装置。
- 前記光透過性フィルムの前記光学接着剤から離れる表面に、前記複数の発光ダイオードの発出した光を反射するための複数の光学パターン群を有するものであることを特徴とする請求項1から請求項11のいずれか一項に記載の発光装置。
- 前記光学パターン群の各々は、複数の反射パターンを含み、前記光学パターン群の各々の中心位置が前記発光ダイオードの各々に対応し、且つ前記光学パターン群内に位置する前記複数の反射パターンのサイズが前記光学パターン群の前記中心位置から離れるにつれて小さくなるように配列されるものであることを特徴とする請求項12に記載の発光装置。
- 前記複数の反射パターンの材料は、酸化アルミニウム、窒化ホウ素、マイクロセルポリエチレンテレフタレート、硫酸バリウム、炭酸カルシウム、二酸化チタン及び二酸化珪素の少なくとも1つを含むものであることを特徴とする請求項13に記載の発光装置。
- 請求項1から請求項14のいずれか一項に記載の発光装置を含むものであることを特徴とするバックライトモジュール。
Applications Claiming Priority (2)
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CN201810986152.1 | 2018-08-28 | ||
CN201810986152.1A CN110867507B (zh) | 2018-08-28 | 2018-08-28 | 发光装置以及背光模块 |
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JP2020035738A true JP2020035738A (ja) | 2020-03-05 |
JP6968124B2 JP6968124B2 (ja) | 2021-11-17 |
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US (1) | US10677423B2 (ja) |
JP (1) | JP6968124B2 (ja) |
CN (1) | CN110867507B (ja) |
Cited By (3)
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WO2023063285A1 (ja) * | 2021-10-11 | 2023-04-20 | 大日本印刷株式会社 | 面発光装置、表示装置、面発光装置の製造方法、および面発光装置用封止部材シート |
WO2023146004A1 (ko) * | 2022-01-28 | 2023-08-03 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 면광원 장치 |
US12001046B2 (en) | 2020-09-30 | 2024-06-04 | Nichia Corporation | Light-emitting device |
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TWI710837B (zh) * | 2019-11-21 | 2020-11-21 | 友達光電股份有限公司 | 背光模組 |
CN111429816A (zh) * | 2020-04-28 | 2020-07-17 | 广东三橙电子科技有限公司 | 一种led模组封装方法及led模组 |
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- 2018-08-28 CN CN201810986152.1A patent/CN110867507B/zh active Active
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JPWO2023063285A1 (ja) * | 2021-10-11 | 2023-04-20 | ||
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US20200072442A1 (en) | 2020-03-05 |
US10677423B2 (en) | 2020-06-09 |
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