JP2020019520A - Packaging structure of silicon carbide substrate - Google Patents

Abstract

To provide a packaging structure of a silicon carbide substrate which can be conveyed while maintaining a high quality of a silicon carbide substrate.SOLUTION: A packaging structure 11 of a silicon carbide substrate 12 includes a silicon carbide substrate 12, a resin container 13 which stores the silicon carbide substrate 12, a first bag 21 which is composed of a first sheet 22 that has flexibility and is made of a thermoplastic resin and is sealed in a state of wrapping the container 13, and a second bag 31 which is composed of a second sheet 32 having flexibility and is sealed in a state of wrapping the first bag 21. The second sheet 32 includes an aluminum layer, and a pair of thermoplastic resin layers which are arranged so as to sandwich the aluminum layer in a thickness direction of the second sheet 32.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a packaging structure for a silicon carbide substrate.

  After being manufactured, a compound semiconductor substrate such as a substrate made of silicon carbide is checked for its quality, and is packaged for shipment to a customer. It is desired that the packaged compound semiconductor substrate be sent to the customer without deteriorating the quality during manufacturing. Patent Literature 1 discloses a method of packaging a compound semiconductor substrate that prevents deterioration in quality during storage.

JP 2009-248976 A

  In the method of packaging a compound semiconductor substrate disclosed in Patent Document 1, an inner bag and an outer bag having different moisture permeability and oxygen permeability are used to prevent oxidation of the surface of the compound semiconductor substrate, and a dehydrating agent is used. Then, the compound semiconductor substrate is packaged. With respect to a silicon carbide substrate, which is a kind of a compound semiconductor substrate and is made of silicon carbide (SiC), it is desired to maintain high quality during transportation after packaging.

  Therefore, an object is to provide a packaging structure for a silicon carbide substrate that can be transported while maintaining high quality of the silicon carbide substrate.

  The packaging structure for a silicon carbide substrate according to the present invention includes a silicon carbide substrate, a resin container for housing and holding the silicon carbide substrate, and a first sheet made of a thermoplastic resin having flexibility. A first bag sealed in a state of wrapping the container, and a second bag composed of a flexible second sheet and sealed in a state of wrapping the first bag, Prepare. The second sheet includes an aluminum layer and a pair of thermoplastic resin layers arranged with the aluminum layer interposed in the thickness direction of the second sheet.

  According to the packaging structure of the silicon carbide substrate, the silicon carbide substrate can be transported while maintaining high quality.

FIG. 2 schematically shows an appearance of a packaging structure for a silicon carbide substrate according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing a cross section along a line II-II in FIG. 1. It is sectional drawing which shows the laminated structure of a 1st sheet. It is sectional drawing which shows the laminated structure of a 2nd sheet. FIG. 11 is a cross-sectional view showing a part of a packaging structure for a silicon carbide substrate according to a second embodiment.

[Description of Embodiment of the Present Invention]
First, the embodiments of the present application will be listed and described. The packaging structure for a silicon carbide substrate according to the present application includes a silicon carbide substrate, a resin container that holds and holds the silicon carbide substrate, and a first sheet made of a thermoplastic resin having flexibility. A first bag sealed in a state of wrapping the container, and a second bag made of a flexible second sheet and sealed in a state of wrapping the first bag. The second sheet includes an aluminum layer and a pair of thermoplastic resin layers arranged with the aluminum layer interposed in the thickness direction of the second sheet.

  In the above-described structure for packaging a silicon carbide substrate, the silicon carbide substrate is housed and held in a container, so that even if an external impact is applied during transportation, the risk of damage to the silicon carbide substrate can be reduced. Here, as the container, for example, a container having a rigidity that is not deformed by its own weight at room temperature is used. The silicon carbide substrate includes not only a substrate made of silicon carbide but also a substrate having a layer formed by epitaxially growing a single crystal of silicon carbide on a substrate made of silicon carbide.

  A package in which a silicon carbide substrate is packaged may be exposed to ultraviolet light during transportation. When ultraviolet rays reach the silicon carbide substrate in the package, the basal plane dislocation of the single crystal of silicon carbide expands, and a shock-ray type stacking fault may be formed. As a result, the quality of the silicon carbide substrate deteriorates. The packaging structure for the silicon carbide substrate is formed of a flexible second sheet, and includes a second bag that is sealed while wrapping the first bag. The second sheet includes an aluminum layer and a pair of thermoplastic resin layers arranged with the aluminum layer interposed in the thickness direction of the first sheet. Aluminum has high UV reflectance and low UV transmittance. Therefore, the aluminum layer included in the second sheet can prevent ultraviolet rays from reaching the silicon carbide substrate. Therefore, it is possible to suppress the formation of the defect and prevent the quality from being lowered during transportation. Aluminum has a lower moisture permeability than resin. Therefore, the second bag can suppress the intrusion of moisture into the inside and suppress the oxidation of the surface of the silicon carbide substrate due to the moisture. Since the aluminum layer is sandwiched between the pair of thermoplastic resin layers, the aluminum layer can be protected by the pair of thermoplastic resin layers, and the possibility that the aluminum layer is damaged can be reduced.

  Since the second sheet includes the aluminum layer, the second sheet has insufficient flexibility and is easily broken at a fold or a corner during handling. The second bag composed of the second sheet is sealed so as to enclose the first bag. The first bag composed of the first sheet is sealed so as to enclose the container. Since the first sheet constituting the first bag is made of a thermoplastic resin containing no aluminum, it is not easily torn. By wrapping the container in the first bag, the possibility of damage to the silicon carbide substrate can be reduced.

  When the second bag is opened, aluminum atoms may be scattered from the aluminum layer included in the second sheet. When the scattered aluminum atoms enter the silicon carbide substrate, they function as impurities for generating carriers. Therefore, in manufacturing a device using a silicon carbide substrate, there is a possibility that achievement of a desired distribution of impurities may be impaired. Therefore, it is necessary to prevent aluminum atoms from entering the silicon carbide substrate. Since the silicon carbide substrate is wrapped by the first bag and sealed by the first bag, when the second bag is opened, the aluminum atoms scattered at the time of opening and the silicon carbide substrate come into direct contact with each other. Never. Further, since the first bag is constituted by the first sheet made of a thermoplastic resin, the first bag is easily charged and aluminum atoms can be positively attached to the first bag itself. Further, dust adhering to the second bag can also adhere to the first bag. Therefore, contamination of the silicon carbide substrate with aluminum atoms and dust can be reduced.

  As a result, the silicon carbide substrate packaging structure can be transported while maintaining high quality of the silicon carbide substrate.

  In the packaging structure for a silicon carbide substrate, a first space in which a first gas is sealed may be formed between the first bag and the second bag. By doing so, the second bag and the first bag come into close contact with each other and wrinkle the second bag, thereby reducing the risk of breakage of the second bag due to the wrinkles.

In the packaging structure of the silicon carbide substrate, the cleanliness of the first gas may be a class 8 or higher specified in ISO (International Organization for Standardization) 14644-1. By doing so, when the second bag is opened, contamination by dust contained in the first gas can be prevented. The class 8 defined in ISO14644-1 is that the upper limit concentration of fine particles of 0.5 μm or more is 3520000 particles / m ³ , the upper limit concentration of fine particles of 1 μm or more is 832,000 particles / m ^3, and the upper limit of fine particles of 5 μm or more is The cleanliness is such that the concentration satisfies 29,300 particles / m ³ .

  In the packaging structure of the silicon carbide substrate, the first gas may be air or an inert gas having a relative humidity at 25 ° C. of 60% or less. By doing so, it is possible to suppress the surface of the silicon carbide substrate from being in contact with moisture when the second bag is opened, and to suppress the oxidation of the surface of the silicon carbide substrate.

  In the packaging structure for a silicon carbide substrate, a second gas may be sealed inside the first bag. By doing so, the second gas is interposed between the container or the silicon carbide substrate and the first bag to reduce a possibility that a load or impact applied from the outside is directly applied to the container or the silicon carbide substrate. be able to.

In the packaging structure of the silicon carbide substrate, the cleanliness of the second gas may be class 7 or higher specified in ISO14644-1. In this way, when the first bag is opened, contamination by dust contained in the second gas can be prevented. Class 7 specified in ISO14644-1 is that the upper limit concentration of fine particles of 0.5 μm or more is 352,000 particles / m ³ , the upper limit concentration of fine particles of 1 μm or more is 83200 particles / m ^3, and the upper limit concentration of fine particles of 5 μm or more is The cleanliness degree satisfies 2930 particles / m ³ .

  In the silicon carbide substrate packaging structure, the cleanliness of the second gas may be higher than the cleanliness of the first gas. By doing so, the cleanliness around the silicon carbide substrate can be increased and contamination of the silicon carbide substrate can be suppressed.

  In the packaging structure for a silicon carbide substrate, the relative humidity of the second gas at 25 ° C. may be lower than the relative humidity of the first gas at 25 ° C. By doing so, the moisture content of the gas around the silicon carbide substrate can be further reduced, and the possibility that the surface of the silicon carbide substrate is oxidized can be reduced.

  In the packaging structure of the silicon carbide substrate, the package may be further provided with a third bag made of a flexible thermoplastic resin third sheet and sealed in a state of wrapping the second bag. . Since the second bag constituted by the second sheet includes the aluminum layer, it is easily broken. However, by wrapping the second bag with the third bag composed of the third sheet made of thermoplastic resin, the risk of breakage of the second bag can be reduced.

[Details of the embodiment of the present invention]
Next, an embodiment of a packaging structure for a silicon carbide substrate of the present application will be described with reference to the drawings. In the drawings below, the same or corresponding portions have the same reference characters allotted, and description thereof will not be repeated.

(Embodiment 1)
A packaging structure for a silicon carbide substrate according to Embodiment 1 of the present application will be described. FIG. 1 schematically shows an appearance of silicon carbide substrate packaging structure 11 in the first embodiment. FIG. 2 is a schematic cross-sectional view showing a cross section along line II-II in FIG.

  Referring to FIGS. 1 and 2, silicon carbide substrate packaging structure 11 according to the first embodiment includes silicon carbide substrate 12, container 13, first bag 21, and second bag 31. .

  Silicon carbide substrate (SiC substrate) 12 may be a substrate made of silicon carbide, or may be a substrate having a layer formed by epitaxially growing a single crystal of silicon carbide on a substrate made of silicon carbide. Silicon carbide substrate 12 has a flat plate shape. Silicon carbide substrate 12 is specifically in a disk shape.

  The container 13 has such a rigidity that it is not deformed by its own weight at room temperature. As the material of the container 13, a resin, specifically, for example, polypropylene, polycarbonate, polybutylene terephthalate, or the like is employed.

  The container 13 is detachably attached to the side wall portion 14 so as to close a hollow cylindrical side wall portion 14, a bottom wall portion 15 closing one side opening of the side wall portion 14, and a second side opening portion of the side wall portion 14. And a lid portion 16 disposed at the bottom. After silicon carbide substrate 12 is placed on bottom wall 15, lid 16 is attached to side wall 14. Thus, silicon carbide substrate 12 is accommodated and held in container 13. An O-ring (not shown) is arranged between the side wall 14 and the lid 16, and the container 13 is hermetically sealed.

  The first bag 21 includes a first sheet 22 made of a thermoplastic resin having flexibility. The first bag 21 is manufactured using the first sheet 22. The first bag 21 has a bag shape and is sealed while wrapping the container 13. Specifically, container 13 containing silicon carbide substrate 12 is arranged in first bag 21 and sealed by heat so as to close the opening.

FIG. 3 is a cross-sectional view showing a laminated structure of the first sheet 22. 3, the thickness direction of the first sheet 22 is indicated by arrow D _1. Note that the thickness direction of the first sheet 22 is the same as the laminating direction of the resin layer described later. Referring to FIG. 3, first sheet 22 in the present embodiment is formed of four layers made of a thermoplastic resin. The first resin layer 24, the second resin layer 25, the third resin layer 26, and the fourth resin layer 27 are stacked in this order so as to contact adjacent layers. The first resin layer 24 and the fourth resin layer 27 each have surfaces exposed to the outside. The third resin layer 26 is the thickest. The second resin layer 25 and the fourth resin layer 27 are made of the same resin.

  As a material of the first resin layer 24, for example, Saran (registered trademark) coated nylon is selected. As the thickness of the first resin layer 24, for example, an arbitrary value in a range of 10 to 35 μm is selected. As a material of the second resin layer 25 and the fourth resin layer 27, for example, low-density polyethylene is selected. As the thickness of the second resin layer 25, for example, an arbitrary value in a range of 10 to 30 μm is selected. As the thickness of the fourth resin layer 27, for example, an arbitrary value within a range of 15 to 35 μm is selected. As the third resin layer 26, for example, a film-like polyethylene is selected. As the thickness of the third resin layer 26, for example, an arbitrary value in a range of 20 to 50 μm is selected.

  The inside of the first bag 21 is filled with a second gas. In the present embodiment, a second space 42 in which a second gas is sealed is formed between the first bag 21 and the container 13. As the second gas, for example, air is selected. The cleanliness of the second gas is a class 7 or higher specified in ISO14644-1.

  The second bag 31 is composed of a flexible second sheet 32. The second bag 31 is manufactured using the second sheet 32. The second bag 31 has a bag shape and is sealed in a state of wrapping the first bag 21. Specifically, a first bag 21 hermetically sealed with the container 13 holding and holding the silicon carbide substrate 12 is arranged in the second bag 31 and sealed by heat so as to close the opening. Seal.

FIG. 4 is a cross-sectional view illustrating a laminated structure of the second sheet 32. 4, the thickness direction of the second sheet 32 is indicated by arrow D _2. Note that the thickness direction of the second sheet 32 is the same as the laminating direction of the resin layer described later. Referring to FIG. 4, second sheet 32 in the present embodiment includes an aluminum layer 34, a pair of thermoplastic resin layers 35 and 36, and a thermoplastic resin layer 37. That is, the second sheet 32 has a structure in which three thermoplastic resin layers 35, 36, and 37 and one aluminum layer 34 are laminated. The resin layer 37 has a surface exposed to the outside. The resin layer 37 is disposed adjacent to and in contact with the resin layer 35. The pair of resin layers 35 and 36 are arranged with the aluminum layer 34 interposed therebetween in the thickness direction of the second sheet 32. The resin layer 36 has a surface exposed to the outside. The pair of resin layers 35 and 36 are made of the same resin.

  As a material of the resin layer 37, for example, nylon is selected. As the thickness of the resin layer 37, for example, an arbitrary value in a range of 5 to 25 μm is selected. As a material of the resin layers 35 and 36, for example, low-density polyethylene is selected. As the thickness of the resin layer 35, for example, an arbitrary value in a range of 10 to 30 μm is selected. As the thickness of the resin layer 36, for example, an arbitrary value in a range of 40 to 100 μm is selected. As the aluminum layer 34, for example, an aluminum foil is selected. As the thickness of the aluminum layer 34, for example, an arbitrary value in a range of 1 to 15 μm is selected.

  A first space 41 in which a first gas is sealed is formed between the first bag 21 and the second bag 31. As the first gas, for example, air or an inert gas whose relative humidity at 25 ° C. is 60% or less is selected. The cleanliness of the first gas is class 8 or higher specified in ISO14644-1. The cleanliness of the second gas is higher than the cleanliness of the first gas. Also, the relative humidity of the second gas at 25 ° C. is lower than the relative humidity of the first gas at 25 ° C.

  In packaging structure 11 of silicon carbide substrate 12 having such a configuration, silicon carbide substrate 12 is housed and held in container 13, so that even if an external impact is applied during transportation, silicon carbide substrate 12 is damaged. Can be reduced. In addition, the aluminum layer 34 included in second sheet 32 can prevent ultraviolet rays from reaching silicon carbide substrate 12. Therefore, it is possible to suppress the formation of the shock-ray type stacking fault and prevent the quality from being lowered during transportation. Second bag 31 composed of second sheet 32 including aluminum layer 34 suppresses intrusion of moisture into the inside and suppresses oxidation of surface of silicon carbide substrate 12 due to moisture. Can be. Since the aluminum layer 34 is sandwiched between the pair of thermoplastic resin layers 35 and 36, the aluminum layer 34 can be protected by the pair of thermoplastic resin layers 35 and 36, and the possibility that the aluminum layer 34 is damaged is reduced. can do. The first sheet 22 constituting the first bag 21 is made of a thermoplastic resin containing no aluminum, and thus is not easily torn. By wrapping container 13 with first bag 21, the risk of breakage of silicon carbide substrate 12 can be reduced. Since silicon carbide substrate 12 is wrapped by first bag 21 and sealed by first bag 21, when second bag 31 is opened, aluminum atoms scattered at the time of opening and silicon carbide substrate 12 does not directly contact. In addition, since the first bag 21 is formed of the first sheet 22 made of a thermoplastic resin, the first bag 21 is easily charged and aluminum atoms can be positively attached to the first bag 21 itself. Further, dust adhering to the second bag 31 can also adhere to the first bag 21. Therefore, contamination of silicon carbide substrate 12 by aluminum atoms and dust can be reduced. Therefore, in such a packaging structure 11 of silicon carbide substrate 12, it is possible to transport silicon carbide substrate 12 while maintaining high quality.

  In the present embodiment, a first space 41 in which a first gas is sealed is formed between the first bag 21 and the second bag 31. Therefore, the second bag 31 and the first bag 21 come into close contact with each other and wrinkles the second bag 31, thereby reducing the risk of breakage of the second bag 31 caused by the wrinkles.

  In the present embodiment, since the cleanliness of the first gas is class 8 or higher specified in ISO14644-1, when the second bag 31 is opened, contamination by dust contained in the first gas is prevented. Can be prevented.

  In the present embodiment, the first gas is air or an inert gas whose relative humidity at 25 ° C. is 60% or less, so that when the second bag 31 is opened, the surface of the silicon carbide substrate 12 is exposed to moisture. Touching can be suppressed, and oxidation of the surface of silicon carbide substrate 12 can be suppressed.

  In the present embodiment, since the second gas is sealed inside the first bag 21, the second gas is interposed between the first bag 21 and the container 13 or the silicon carbide substrate 12. Thus, the possibility that a load or impact applied from the outside is directly applied to container 13 or silicon carbide substrate 12 can be reduced.

  In the present embodiment, since the cleanliness of the second gas is equal to or higher than the class 7 defined in ISO14644-1, when the first bag 21 is opened, contamination by dust contained in the second gas is prevented. Can be prevented.

  In the present embodiment, since the cleanliness of the second gas is higher than the cleanliness of the first gas, the cleanliness around the silicon carbide substrate 12 is increased to suppress the contamination of the silicon carbide substrate 12. Can be.

  In the packaging structure of the silicon carbide substrate, since the relative humidity of the second gas at 25 ° C. is lower than the relative humidity of the first gas at 25 ° C., the moisture content of the gas around silicon carbide substrate 12 is higher. , And the possibility that the surface of silicon carbide substrate 12 is oxidized can be reduced.

  Next, a method of packaging silicon carbide substrate 12 in the first embodiment will be briefly described. Silicon carbide substrate 12 to be packaged is housed and held in container 13 in a clean room. That is, silicon carbide substrate 12 is placed on bottom wall 15, and lid 16 is attached to side wall 14. In such a state, container 13 containing and holding silicon carbide substrate 12 is arranged in first bag 21. Thereafter, the gas inside the first bag 21 is slightly released from the opening side of the first bag 21 and then sealed by heat so as to close the opening. Container 13 holding and holding silicon carbide substrate 12 in this manner is sealed by first bag 21. In this state, the first bag 21 in which the container 13 holding and holding the silicon carbide substrate 12 is sealed is taken out of the clean room. After that, the first bag 21 is placed inside the second bag 31 outside the clean room. Then, the second bag 31 is sealed by heat so as to close the opening. Thus, silicon carbide substrate 12 is packaged.

(Embodiment 2)
The packaging structure 11 of the silicon carbide substrate 12 according to Embodiment 2 of the present application will be described. FIG. 5 is a schematic sectional view of packaging structure 11 for silicon carbide substrate 12 in the second embodiment. The cross section shown in FIG. 5 corresponds to the cross section shown in FIG.

  The packaging structure 11 of the silicon carbide substrate 12 according to the second embodiment has a structure basically similar to that of the first embodiment, and has the same effect. However, packaging structure 11 of silicon carbide substrate 12 in the second embodiment is different from that in the first embodiment in the following points.

  Referring also to FIG. 5, packaging structure 11 for silicon carbide substrate 12 of the second embodiment includes silicon carbide substrate 12, container 13, and first bag 21 similarly to the case of the first embodiment. , A second bag 31. The packaging structure 11 of the silicon carbide substrate 12 according to the second embodiment further includes a third bag 51.

  The third bag 51 includes a third sheet 52 made of a thermoplastic resin having flexibility. The third bag 51 is manufactured using the third sheet 52. The third bag 51 has a bag shape and is sealed in a state of wrapping the second bag 31. Specifically, the second bag 31 in which the first bag 21 in which the container 13 accommodating and holding the silicon carbide substrate 12 is sealed is placed in the third bag 51 and the opening is closed. And seal with heat.

  The configuration of the third sheet 52 is, for example, the same as the configuration of the first sheet 22. That is, the third sheet 52 in the present embodiment is composed of four layers made of a thermoplastic resin. The first resin layer 24, the second resin layer 25, the third resin layer 26, and the fourth resin layer 27 are stacked in this order so as to contact adjacent layers. The first resin layer 24 is disposed on a surface layer on one side in the thickness direction of the third sheet 52. The fourth resin layer 27 is disposed on the surface layer on the other side in the thickness direction of the third sheet 52. The second resin layer 25 and the fourth resin layer 27 are made of the same resin. The materials and thicknesses of the resin layers 24 to 27 are the same as those of the first sheet 22.

  A third space 43 in which a third gas is sealed is formed between the second bag 31 and the third bag 51. As the third gas, for example, air or an inert gas whose relative humidity at 25 ° C. is 60% or less is selected.

  In packaging structure 11 of silicon carbide substrate 12 of the present embodiment, second bag 31 constituted by second sheet 32 is likely to be torn because it includes aluminum layer 34. However, by wrapping the second bag 31 with the third bag 51 composed of the third sheet 52 made of a thermoplastic resin, the risk of breakage of the second bag 31 can be reduced.

  In addition, a third space 43 in which a third gas is sealed is formed between the second bag 31 and the third bag 51. With such a configuration, even if the pressure of the outside air decreases during transportation, the durability of the third bag 51 formed of the third sheet 52 made of a thermoplastic resin is high, and thus the pressure difference is caused by the pressure difference. The expansion of the third bag 51 can be suppressed. Therefore, the expansion of the second bag 31 sealed by the third bag 51 can be suppressed, and the possibility of the second bag 31 being damaged can be reduced.

(Other embodiments)
In packaging structure 11 of silicon carbide substrate 12, first bag 21 and second bag 31 may be in close contact with each other. By doing so, it is also possible to suppress the formation of the above-mentioned defects and prevent a decrease in quality during transportation. Further, oxidation of the surface of silicon carbide substrate 12 due to moisture can be suppressed.

  In the above embodiment, the second sheet 32 constituting the second bag 31 is made up of one aluminum layer 34 and two thermoplastic resin layers 35 and 36 disposed with the aluminum layer 34 interposed therebetween. It may be configured and may include an additional resin layer. The aluminum layer 34 may include a plurality of layers.

  In the above embodiment, the first sheet 22 constituting the first bag 21 may be composed of one thermoplastic resin layer, and may be composed of two thermoplastic resin layers, three thermoplastic resin layers, May be composed of five or more thermoplastic resin layers.

  In the above embodiment, the container 13 includes the side wall portion 14, the bottom wall portion 15, and the lid portion 16. However, the configuration is not limited thereto. For example, the container 13 may be configured without the lid portion 16. Good. That is, the container 13 may be tray-shaped. Further, a plurality of silicon carbide substrates 12 may be accommodated and held in container 13. Container 13 may be configured to be capable of accommodating and holding a plurality of silicon carbide substrates 12 at intervals.

  It should be understood that the embodiments disclosed this time are illustrative in all aspects and are not restrictive in any aspect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The packaging structure of the silicon carbide substrate of the present application can be particularly advantageously applied when it is required to transport the silicon carbide substrate while maintaining high quality.

11 Packaging Structure of Silicon Carbide Substrate 12 Silicon Carbide Substrate 13 Container 14 Side Wall 15 Bottom Wall 16 Cover 21 First Bag 22 First Sheet 24, 25, 26, 27, 35, 36, 37 Resin Layer 31 Second bag 32 Second sheet 34 Aluminum layer 41 First space 42 Second space 43 Third space 51 Third bag 52 Third sheet

Claims (9)

A silicon carbide substrate;
A resin container for housing and holding the silicon carbide substrate,
A first bag made of a first sheet made of a thermoplastic resin having flexibility, and sealed in a state of wrapping the container,
A second bag, which is made of a flexible second sheet and is sealed in a state of wrapping the first bag.
The second sheet,
An aluminum layer,
A packaging structure for a silicon carbide substrate, comprising: a pair of thermoplastic resin layers disposed so as to sandwich the aluminum layer in a thickness direction of the second sheet. 2. The silicon carbide substrate packaging structure according to claim 1, wherein a first space filled with a first gas is formed between the first bag and the second bag. 3. 3. The silicon carbide substrate packaging structure according to claim 2, wherein the first gas has a degree of cleanliness of class 8 or more specified in ISO14644-1. 4. 4. The silicon carbide substrate packaging structure according to claim 2, wherein the first gas is air or an inert gas having a relative humidity at 25 ° C. of 60% or less. 5. The packaging structure for a silicon carbide substrate according to claim 1, wherein a second gas is sealed inside the first bag. The packaging structure for a silicon carbide substrate according to claim 5, wherein the cleanliness degree of the second gas is a class 7 or more specified in ISO14644-1. The packaging structure for a silicon carbide substrate according to claim 5, wherein the cleanliness of the second gas is higher than the cleanliness of the first gas. 8. The packaging of the silicon carbide substrate according to claim 5, wherein the relative humidity of the second gas at 25 ° C. is lower than the relative humidity of the first gas at 25 ° C. 9. Construction. 9. The apparatus according to claim 1, further comprising a third bag made of a third sheet made of a thermoplastic resin having flexibility and sealed in a state of wrapping the second bag. 10. 2. The packaging structure for a silicon carbide substrate according to claim 1.

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