JP2020002357A - 低酸化物トレンチディッシング化学機械研磨 - Google Patents

低酸化物トレンチディッシング化学機械研磨 Download PDF

Info

Publication number
JP2020002357A
JP2020002357A JP2019122998A JP2019122998A JP2020002357A JP 2020002357 A JP2020002357 A JP 2020002357A JP 2019122998 A JP2019122998 A JP 2019122998A JP 2019122998 A JP2019122998 A JP 2019122998A JP 2020002357 A JP2020002357 A JP 2020002357A
Authority
JP
Japan
Prior art keywords
group
ceria
organic
particle size
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019122998A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020002357A5 (enExample
Inventor
シー シアオポー
Xiaobo Shi
シー シアオポー
ピー．ムレラ クリシュナ
P Murella Krishna
ピー．ムレラ クリシュナ
ディー．ローズ ジョーセフ
D Rose Joseph
ディー．ローズ ジョーセフ
ホンチュン チョウ
Hongjun Zhou
ホンチュン チョウ
レナード オニール マーク
Mark Leonard O'neill
レナード オニール マーク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Versum Materials US LLC
Original Assignee
Versum Materials US LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials US LLC filed Critical Versum Materials US LLC
Publication of JP2020002357A publication Critical patent/JP2020002357A/ja
Publication of JP2020002357A5 publication Critical patent/JP2020002357A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2019122998A 2018-06-29 2019-07-01 低酸化物トレンチディッシング化学機械研磨 Pending JP2020002357A (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201862692639P 2018-06-29 2018-06-29
US201862692633P 2018-06-29 2018-06-29
US62/692,639 2018-06-29
US62/692,633 2018-06-29
US16/450,753 US20200002607A1 (en) 2018-06-29 2019-06-24 Low Oxide Trench Dishing Chemical Mechanical Polishing
US16/450,753 2019-06-24

Publications (2)

Publication Number Publication Date
JP2020002357A true JP2020002357A (ja) 2020-01-09
JP2020002357A5 JP2020002357A5 (enExample) 2022-05-02

Family

ID=67137867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019122998A Pending JP2020002357A (ja) 2018-06-29 2019-07-01 低酸化物トレンチディッシング化学機械研磨

Country Status (8)

Country Link
US (1) US20200002607A1 (enExample)
EP (1) EP3587524A1 (enExample)
JP (1) JP2020002357A (enExample)
KR (1) KR102794696B1 (enExample)
CN (1) CN110655869A (enExample)
IL (1) IL267715A (enExample)
SG (1) SG10201906088YA (enExample)
TW (1) TWI791862B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023527423A (ja) * 2020-05-29 2023-06-28 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー シャロートレンチアイソレーション用途のための低ディッシング酸化物ｃｍｐ研磨組成物、及びその製造の方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
KR102680336B1 (ko) * 2024-02-28 2024-07-02 주식회사 야놀자 Llm 서버 및 외부 서버와 연계하여 사용자가 요청한 기능을 자동으로 수행하는 챗봇 운영 서버 및 그 동작 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120077419A1 (en) * 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)
JP2013541609A (ja) * 2010-09-08 2013-11-14 ビーエーエスエフ ソシエタス・ヨーロピア 電気機器や機械機器・光学機器用の基板の化学機械研磨用の水性研磨組成物と方法
JP2015506386A (ja) * 2011-12-21 2015-03-02 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ Ｃｍｐ組成物、半導体装置の製造方法及びｃｍｐ組成物の使用方法
WO2018062401A1 (ja) * 2016-09-29 2018-04-05 花王株式会社 研磨液組成物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028620A (en) * 1988-09-15 1991-07-02 Rohm And Haas Company Biocide composition
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US6964923B1 (en) 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
US6616514B1 (en) * 2002-06-03 2003-09-09 Ferro Corporation High selectivity CMP slurry
TWI598434B (zh) * 2010-09-08 2017-09-11 巴斯夫歐洲公司 含有Ｎ－取代重氮烯（ｄｉａｚｅｎｉｕｍ）二氧化鹽及／或Ｎ’－羥基－重氮烯（ｄｉａｚｅｎｉｕｍ）氧化鹽之水研磨組成物
CN108276915A (zh) * 2010-12-10 2018-07-13 巴斯夫欧洲公司 用于化学机械抛光包含氧化硅电介质和多晶硅膜的基底的含水抛光组合物和方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120077419A1 (en) * 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)
JP2013541609A (ja) * 2010-09-08 2013-11-14 ビーエーエスエフ ソシエタス・ヨーロピア 電気機器や機械機器・光学機器用の基板の化学機械研磨用の水性研磨組成物と方法
JP2015506386A (ja) * 2011-12-21 2015-03-02 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ Ｃｍｐ組成物、半導体装置の製造方法及びｃｍｐ組成物の使用方法
WO2018062401A1 (ja) * 2016-09-29 2018-04-05 花王株式会社 研磨液組成物

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023527423A (ja) * 2020-05-29 2023-06-28 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー シャロートレンチアイソレーション用途のための低ディッシング酸化物ｃｍｐ研磨組成物、及びその製造の方法
JP7766050B2 (ja) 2020-05-29 2025-11-07 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー シャロートレンチアイソレーション用途のための低ディッシング酸化物ｃｍｐ研磨組成物、及びその製造の方法

Also Published As

Publication number Publication date
KR20200002709A (ko) 2020-01-08
CN110655869A (zh) 2020-01-07
IL267715A (en) 2019-10-31
US20200002607A1 (en) 2020-01-02
TW202000815A (zh) 2020-01-01
SG10201906088YA (en) 2020-01-30
TWI791862B (zh) 2023-02-11
EP3587524A1 (en) 2020-01-01
KR102794696B1 (ko) 2025-04-10

Similar Documents

Publication Publication Date Title
TWI827643B (zh) 氧化物化學機械平坦化（ｃｍｐ）研磨組合物及研磨方法
JP7121696B2 (ja) 低酸化物トレンチディッシング化学機械研磨
JP2020002357A (ja) 低酸化物トレンチディッシング化学機械研磨
JP6999714B2 (ja) シャロートレンチアイソレーション化学機械研磨スラリー
JP2023104945A (ja) シャロートレンチアイソレーション（ｓｔｉ）の化学機械平坦化研磨（ｃｍｐ）において酸化物／窒化物選択性を高め、酸化物トレンチのディッシングを低く均一化する方法
JP2020117709A (ja) 低研磨材濃度及び化学添加剤の組み合わせを有するシャロートレンチアイソレーション（ｓｔｉ）化学機械平坦化（ｃｍｐ）研磨
JP6974394B2 (ja) 低酸化物トレンチディッシング化学機械研磨
KR102829597B1 (ko) 얕은 트랜치 절연(STI) 공정을 위한 SiN 제거율 억제 및 옥사이드 트랜치 디싱 감소
JP7766050B2 (ja) シャロートレンチアイソレーション用途のための低ディッシング酸化物ｃｍｐ研磨組成物、及びその製造の方法
JP2024536365A (ja) シャロートレンチアイソレーションのための化学機械平坦化研磨
CN114787304B (zh) 低氧化物沟槽凹陷的浅沟槽隔离化学机械平面化抛光
JP6980821B2 (ja) 調節可能な酸化ケイ素及び窒化ケイ素除去速度を有するシャロートレンチアイソレーション（ｓｔｉ）化学機械平坦化（ｃｍｐ）研磨
JP2023506487A (ja) 低酸化物トレンチディッシングシャロートレンチアイソレーション化学的機械平坦化研磨

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220421

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220421

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230131

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20230428

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230720

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20230808