JP2019530236A - フィルタリングのための補償を用いた終点検出 - Google Patents
フィルタリングのための補償を用いた終点検出 Download PDFInfo
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- 238000001514 detection method Methods 0.000 title description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- 230000001960 triggered effect Effects 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
Description
に従って決定されうるのであるが、ここで、VTはもとの閾値であり、ΔTは時間遅延値であり、Rは勾配である。
として計算することができる。
は、
として計算することができるだろが、ここでNは、平均化されているいくつかの連続した値であり、akは、系列からの値に対する重みである。この場合、時間遅延値ΔTは、
のように計算することができるだろうが、ここで、fは、サンプリングレート(例えば、プラテン1回転につき1回といった、生の値が生成される頻度)である。
Y=C0+C1*X+C2*X2
である場合、
R=dX/dtであるから、研磨速度dY/dtは、
dY/dt=R*(c1+2*c2*Y)
として計算することができる。
Claims (15)
- 研磨システムであって、
研磨パッドを保持するためのプラテンと、
研磨中に基板を前記研磨パッドに押し当てて保持するためのキャリアヘッドと、
研磨中に前記基板をモニタし、研磨されている前記基板の層の厚さに依存する信号を生成するためのインシトゥモニタリングシステムと、
コントローラであって、
もとの閾値と、前記信号をフィルタリングするのに必要な時間を表す時間遅延値とを記憶し、
前記インシトゥモニタリングシステムから前記信号を受信し、フィルタリングされた信号を生成するために前記信号をフィルタリングし、
前記もとの閾値及び前記時間遅延値から調整された閾値を決定し、
前記フィルタリングされた信号が前記調整された閾値と交差するとき、研磨終点をトリガする
ように構成されたコントローラと
を備える研磨システム。 - 前記コントローラが、前記フィルタリングされた信号の勾配を決定するように構成される、請求項1に記載の研磨システム。
- 前記コントローラが、前記時間遅延値に前記勾配を乗算することによって、前記閾値に対する調整を決定するように構成される、請求項2に記載の研磨システム。
- コントローラが、1つ又は複数のフィルタパラメータに従って前記信号をフィルタリングするように構成され、かつ前記1つ又は複数のフィルタパラメータに基づいて前記時間遅延値を決定するように構成される、請求項1に記載の研磨システム。
- 前記1つ又は複数のフィルタパラメータが、前記信号からのいくつかの測定値及び/又は前記フィルタリングされた信号を生成するために使用される前記信号の期間を含む、請求項5に記載の研磨システム。
- 前記プラテンが回転可能であり、前記インシトゥモニタリングシステムが、前記プラテン内に位置決めされたセンサを含み、前記センサが前記基板の下を断続的に掃引する、請求項6に記載の研磨システム。
- 前記コントローラが、移動平均又はノッチフィルタのうちの1つ又は複数を前記信号に適用することによって、前記フィルタリングされた信号を生成するように構成される、請求項1に記載の研磨システム。
- 前記コントローラが、前記フィルタリングされた信号が前記調整された閾値と比較される前に、前記信号を厚さ測定値のシーケンスに変換するように構成される、請求項1に記載の研磨システム。
- コンピュータプログラム製品であって、プロセッサに、
インシトゥモニタリングシステムから、研磨されている基板の層の厚さに依存する信号を受信させ、
もとの閾値と、前記信号をフィルタリングするのに必要な時間を表す時間遅延値とを記憶させ、
フィルタリングされた信号を生成するために、前記信号をフィルタリングさせ、
前記もとの閾値及び前記時間遅延値から調整された閾値を決定させ、
前記フィルタリングされた信号が前記調整された閾値と交差するとき、研磨終点をトリガさせる
ための命令を有する非一時的コンピュータ可読媒体を含むコンピュータプログラム製品。 - 前記フィルタリングされた信号の勾配を決定するための命令を含む、請求項10に記載のコンピュータプログラム製品。
- 前記時間遅延値に前記勾配を乗算することによって、前記閾値に対する調整を決定するための命令を含む、請求項11に記載のコンピュータプログラム製品。
- 研磨方法であって、
基板の層を研磨することと、
前記層の厚さに依存する信号を生成するために、インシトゥモニタリングシステムを用いて前記基板の前記層をモニタすることと、
フィルタリングされた信号を生成するために、前記信号をフィルタリングすることと、
もとの閾値と、前記信号をフィルタリングするのに必要な時間を表す時間遅延値とから調整された閾値を決定することと、
前記フィルタリングされた信号が前記調整された閾値と交差するとき、研磨終点をトリガすることと
を含む研磨方法。 - 前記フィルタリングされた信号の勾配を決定することを含む、請求項13に記載の方法。
- 前記時間遅延値に前記勾配を乗算することによって、前記閾値に対する調整を決定することを含む、請求項14に記載の方法。
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US201662397840P | 2016-09-21 | 2016-09-21 | |
US62/397,840 | 2016-09-21 | ||
PCT/US2017/052514 WO2018057623A1 (en) | 2016-09-21 | 2017-09-20 | Endpoint detection with compensation for filtering |
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JP7062644B2 JP7062644B2 (ja) | 2022-05-06 |
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US (1) | US10427272B2 (ja) |
JP (1) | JP7062644B2 (ja) |
KR (1) | KR102407016B1 (ja) |
CN (1) | CN109791881B (ja) |
TW (1) | TWI753018B (ja) |
WO (1) | WO2018057623A1 (ja) |
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US20220115226A1 (en) * | 2020-10-08 | 2022-04-14 | Okmetic Oy | Manufacture method of a high-resistivity silicon handle wafer for a hybrid substrate structure |
WO2023283582A1 (en) * | 2021-07-06 | 2023-01-12 | Red Wolf Technology, Inc. | On-demand repair of mobile device screens |
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CN109791881A (zh) | 2019-05-21 |
WO2018057623A1 (en) | 2018-03-29 |
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JP7062644B2 (ja) | 2022-05-06 |
US10427272B2 (en) | 2019-10-01 |
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TW201816875A (zh) | 2018-05-01 |
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