JP2019522363A - Component with improved performance and method for manufacturing the component - Google Patents

Abstract

A component having a substrate (1), a first semiconductor body (2), a second semiconductor body (4), and a first transition zone (3), wherein the first semiconductor body second One active layer (23) is designed to produce electromagnetic radiation of a first peak wavelength, and the second active layer (43) of the second semiconductor body produces electromagnetic radiation of a second peak wavelength. A component that is designed to be generated is described. The first transition zone is disposed vertically between the first semiconductor body and the second semiconductor body and directly joins the first and second semiconductor bodies. The first transition zone includes a conductive material that is transparent to radiation, and the first semiconductor body is adapted to be conductively connected to the second semiconductor body via the first transition zone. The first transition zone also has a structured main surface (301, 302) and / or a mirror structure (33) that is first partially transparent and partially wavelength selective reflective. Also disclosed is a particularly suitable method for manufacturing a component as described, in which the first and second semiconductor bodies are mechanically and electrically interconnected, in particular by direct bonding. [Selection] Figure 7

Description

  The present invention relates to components with improved performance, particularly optoelectronic components. Furthermore, it relates to a method for manufacturing a component.

  In components comprising stacked semiconductor bodies each having a photoactive layer for generating electromagnetic radiation of a specific peak wavelength, the emitted light of various wavelengths propagates in all directions. The emitted light of the first wavelength is absorbed when entering the semiconductor body, and the semiconductor body emits light of another wavelength. In particular, light loss occurs due to reflection or total reflection at the junction between the semiconductor bodies.

  To enhance component performance, mirrors are often used to prevent light from being emitted toward the component carrier. Such mirrors typically do not transmit visible light and can therefore be placed only at one end of the component. In this case, the light emitted by the semiconductor body and reflected back by the mirror must penetrate all the semiconductor bodies of the component in such a way that it can be partially absorbed before it can be separated from the component.

  One object of the present invention is to enhance the performance of components, particularly components having stacked semiconductor bodies. It is a further object of the present invention to provide a simplified and reliable method for manufacturing components.

  In at least one embodiment, the component comprises a substrate, a first semiconductor body having a first active layer, a second semiconductor body having a second active layer, and a first transition area. . During operation of the component, the first active layer is configured to generate first peak wavelength electromagnetic radiation, and the second active layer is configured to generate second peak wavelength electromagnetic radiation. ing. The first peak wavelength and the second peak wavelength may be substantially the same or may be different from each other by at least 30 nm, such as by at least 50 nm or by at least 70 nm. The first transition zone is arranged vertically between the first semiconductor body and the second semiconductor body. In particular, the first transition zone is directly adjacent to the first semiconductor body and directly adjacent to the second semiconductor body. The first transition zone has a radiation transmissive material that is electrically conductive and at least partially transparent with respect to radiation of the first peak wavelength. The first semiconductor body is preferably connected to the second semiconductor body via the first transition zone, for example via a radiation transmissive conductive material of the first transition zone. The first transition zone preferably has a structured main surface and / or a first partially transparent and partially wavelength-selective reflective mirror structure.

  The transverse direction is generally understood to mean a direction extending along the main extension plane of the component or of the first semiconductor body, in particular parallel thereto. On the other hand, the vertical direction is understood to mean a direction that is directed in particular perpendicularly to the stretch plane, in particular across the main stretch plane of the component or of the semiconductor body. The vertical direction is, for example, the growth direction of the first semiconductor body. The vertical and lateral directions are in certain cases perpendicular to each other.

  The main surface of a layer generally means the surface of this layer which extends along the main extension plane of the layer, in particular the boundary between this layer and its surroundings, for example its adjacent layers. Understood. A structured surface is generally understood to mean a surface that is not smooth and has a structure that scatters light in the visible wavelength range in particular.

  According to at least one embodiment of the component, the first transition zone has a structured main surface. This major surface can face towards the substrate or the first semiconductor body, or it can face away from the substrate or away from the first semiconductor body. In particular, the main surface of the transition zone is a common junction between the transition zone and the first semiconductor body or a common junction between the transition zone and the second semiconductor body. The structured main surface of the first transition zone is in this case arranged vertically between the first active layer and the second active layer. The structured main surface can be roughened. In particular, the structured main surface has a separating structure formed on the main surface in the form of ridges or depressions. Depending on the size of the separation structure, scattering can be more pronounced for a particular wavelength than for other wavelengths. In general, radiation components having shorter wavelengths scatter more strongly than radiation components having longer wavelengths. With an appropriate choice with respect to the size of the isolation structure, in particular the long wave light generated in the first active layer can be transmitted through the entire transition area with little or no loss towards the direction of the second semiconductor body. On the other hand, especially the shortwave light generated in the second active layer is scattered and reflected back on the structured main surface of the first transition zone without being absorbed by the first semiconductor body. Can be separated from components.

  According to at least one embodiment of the component, the structured main surface of the first transition zone has a separating structure. The separation structure has a lateral width of, for example, between 20 nm and 3 μm including the values at both ends, in particular between 100 nm and 2 μm including the values at both ends, or between 100 nm and 1 μm including the values at both ends. For example, the average lateral width of the separation structure is between 50 nm and 1 μm including values at both ends, for example, between 100 nm and 800 nm including values at both ends, or between 200 nm and 600 nm including values at both ends. Preferably, the structured main surface has a first separation structure, wherein the first separation structure has an average lateral width that is smaller than the first peak wavelength and larger than the second peak wavelength. In this case, the electromagnetic radiation of the first peak wavelength is little or not scattered at the structured main surface, so that it passes through the first transition zone with virtually no loss of radiation. In contrast, the second peak wavelength of electromagnetic radiation is more strongly scattered and reflected back at the main surface of the structured transition zone. The main surface of the first transition zone thus acts wavelength selective with respect to its scattering and / or reflection properties. If uncertain, taking into account the associated refractive index, the first peak wavelength and the second peak wavelength are determined in their respective semiconductor bodies or in the first transition zone.

  According to at least one embodiment of the component, the first transition zone has a first partially transparent and partially wavelength selective reflective mirror structure. The first mirror structure particularly serves as a distributed Bragg reflector (DBR) or as a dichroic mirror. In particular, the first mirror structure is formed in a manner that transmits electromagnetic radiation of a first peak wavelength and at least scatters and / or partially reflects electromagnetic radiation of a second peak wavelength. The first mirror structure may have first and second layers arranged alternately. The first layer may be formed from a radiation transmissive conductive material, for example from the same radiation transmissive conductive material as that of the first transition zone. The second layer and the first layer preferably have different materials. In particular, the first layer of the mirror structure has a refractive index that differs from the refractive index of the second layer of the first mirror structure by at least 0.3, for example at least 0.5 or 0.7. Within the first transition zone, the first mirror structure is arranged between termination layers made in particular of a radiolucent conductive material. The first mirror structure can be conductive.

  According to at least one embodiment of the component, the first mirror structure has a plurality of through contacts extending perpendicularly through the first layer and the second layer of the first mirror structure. The through contact is preferably conductive. These may be formed from a radiation transmissive conductive material, for example from the same radiation transmissive conductive material as that of the first transition zone. In this case, the first mirror structure may have a dielectric and weakly conductive first and / or second layer.

  According to at least one embodiment of the component, the component has a third semiconductor body having a third photoactive layer for generating a third peak wavelength of electromagnetic radiation. For example, the second semiconductor body is disposed in the vertical direction between the first semiconductor body and the third semiconductor body. The semiconductor bodies are thus stacked on top of each other. Preferably, the component has a second transition area through which the second semiconductor body is mechanically and electrically connected to the third semiconductor body. In particular, the second transition zone is directly joined to the second semiconductor body and directly joined to the third semiconductor body.

  The first transition zone and the second transition zone may have a structurally similar or identical structure. In other words, the second transition zone may have a radiation transmissive material that is conductive and at least partially transparent for radiation of the second peak wavelength. Further, the second transition zone may have a structured main surface and / or a second mirror structure that is partially transparent and partially wavelength selective reflective. The semiconductor body can also have a structurally similar or identical structure, for example, a first semiconductor layer of a first charge carrier type, a second semiconductor layer of a second charge carrier type, and A photoactive layer disposed between them.

  According to at least one embodiment variant, the second transition zone has a structured main surface with a second separating structure formed in particular as a ridge or recess. Preferably, the isolation structure has a lateral width, for example between 20 nm and 3 μm including the values at both ends, for example between 20 nm and 1 μm including the values at both ends, in particular between 50 nm and 900 nm including the values at both ends. The isolation structure may have a vertical width, for example between 50 nm and 3 μm including the values at both ends, for example between 50 nm and 2 μm including the values at both ends, in particular between 50 nm and 900 nm including the values at both ends. . In particular, the second separation structure has an average width or average vertical height that is less than the average width or average vertical height of the first separation structure. Preferably, the second separation structure has an average lateral width that is less than the second and / or first peak wavelength and greater than the third peak wavelength. If uncertain, the peak wavelength in each semiconductor body or in the second transition zone is measured taking into account the respective refractive index.

  According to at least one embodiment of the component, the first peak wavelength is assigned to the red spectral range of visible light. The second peak wavelength is assigned to the green spectral range, for example. The third peak wavelength can be assigned to the blue spectral range. Preferably, the second transition area has a structured main surface comprising a second separation structure having a smaller lateral width than the first separation structure of the structured main surface of the first transition area. .

  According to at least one embodiment of the component, the second transition zone transmits electromagnetic radiation of the first and second peak wavelengths, scatters and / or at least partly of the electromagnetic radiation of the third peak wavelength. It has a second mirror structure that is partially transparent and partially wavelength selective reflective. Similar to the first mirror structure, the second mirror structure can be a Bragg mirror, in particular a dichroic mirror, or it can act as a Bragg mirror or a dichroic mirror.

  The first mirror structure and the second mirror structure may be different from each other with respect to wavelength selectivity. In particular, the first mirror structure is adapted for radiation at a first peak wavelength and the second mirror structure is adapted for radiation at a second peak wavelength. For example, the second mirror structure is a Bragg mirror comprising a plurality of alternating first and second layers. The first layer of the first mirror structure and the first layer of the second mirror structure may each be formed from a radiation transmissive conductive material, in particular from the same material. However, the second layer of the first mirror structure and the second layer of the second mirror structure may be different from each other with respect to their layer thickness and / or their material.

  According to at least one embodiment of the component, the radiation transmissive conductive material of the first transition zone and / or of the second transition zone is a transparent conductive oxide (TCO), in particular indium tin oxide ( ITO). The radiation transmissive conductive material differs from the refractive index of the first and / or second and / or third semiconductor body, preferably by at least 0.2, for example by at least 0.4 or 0.6. Has a refractive index. When uncertain, the corresponding refractive index is determined at a wavelength in the red, green or blue spectral range, for example about 550 nm.

  According to at least one embodiment of the component, the first transition zone and / or the second transition zone does not include an adhesion promoting bond material and / or a bond layer. The semiconductor bodies of the components can be mechanically and electrically connected to each other by direct bonding. The first transition area and / or the second transition area may have a planar internal junction between the first termination layer and the second termination layer. Preferably, the first termination layer and / or the second termination layer is formed from a radiation transmissive conductive material. In the case of direct bonding, the internal joint does not contain any bonding material, in particular no adhesion promoting bonding material such as a solder material or an adhesive. The internal joint surface is formed by, for example, a planar connection surface of the termination layer. The first and second termination layers can be formed from the same material or from different radiolucent conductive materials. The first transition area and / or the second transition area may have a plurality of such planar internal joints, in particular at least two such planar internal joints, The material may not be included.

  In a method for manufacturing a component, a first composite material, such as a first wafer composite material, is provided that includes a substrate, a first semiconductor body, and a first termination layer. The first composite has a first exposed planar connection surface. The planar connection surface is formed by the surface of the first termination layer, for example. The first semiconductor body is positioned between the substrate and the first planar connection surface and has a first photoactive layer. The substrate can be a growth substrate such as a sapphire substrate or a silicon substrate. Alternatively, the substrate may be different from the growth substrate.

  A planar connecting surface is generally understood to mean a surface that is flat, especially when viewed under a microscope. Preferably, the planar surface exhibits local irregularities in the vertical direction, in particular smaller than 5 nm, smaller than 3 nm, preferably smaller than 1 nm or smaller than 0.5 nm. When not certain, it is understood that the irregularities are determined as root mean square (RMS).

  A second composite material, particularly a second wafer composite material, having an auxiliary substrate, a second semiconductor body, and a second termination layer is prepared. The second composite material has a second planar connection surface, in particular formed by the surface of the second termination layer. The second semiconductor body is positioned between the auxiliary substrate and the second planar connection surface and has a second photoactive layer. The first termination layer and the second termination layer are preferably formed from a radiation transmissive conductive material. They can be formed from the same material or from different materials.

  The first composite and the second composite are preferably mechanically and electrically connected to each other by direct bonding at the first and second planar connection surfaces. A first transition area is formed between the first semiconductor body and the second semiconductor body, the transition area comprising a first termination layer and a second termination layer. The first and second composites preferably have a primary surface with a transition zone structured and / or a first mirror structure that is partially transparent and partially wavelength selective reflective. Formed in a different manner. In the next method step, the auxiliary substrate is separated from the second composite. The auxiliary substrate may be a growth substrate having a second semiconductor body epitaxially grown on the surface, or may be different from the growth substrate.

  In direct bonding, a hydrophilic surface and a hydrophobic surface are in physical contact. Mechanical coupling is based primarily or exclusively on hydrogen bonding and / or van der Waals interactions in the immediate vicinity of a common junction. In the direct bonding process, the first and second planar connecting surfaces are brought together under the influence of pressure and suitable temperature, for example to form a common composite from the first and second composites. In this case, the common joint is formed by the immediately adjacent regions of the first and second connection surfaces and remains free of bonding material, in particular adhesion promoting material.

  According to at least one embodiment of the method, the auxiliary substrate has a structured main surface on which the second semiconductor body is grown. In particular, the auxiliary substrate is a structured sapphire substrate. After the auxiliary substrate is detached or separated, the structure of the main surface of the auxiliary substrate is transferred to the surface of the second semiconductor body as a structure obtained by inverting the main surface of the auxiliary substrate. As a result, after separation of the auxiliary substrate, the second semiconductor body has an exposed structured main surface.

  According to at least one embodiment of the method, the second semiconductor body is grown on the auxiliary substrate, and the exposed major surface of the second semiconductor body has a termination layer made of a radiation transmissive conductive material. Structured before being formed on the exposed structured main surface of the second semiconductor body. The structuring of the exposed main surface of the second semiconductor body can be performed before or after separation of the auxiliary substrate.

  According to at least one embodiment of the method, the first mirror structure may be coupled to the first composite by direct coupling before the first composite is mechanically and electrically coupled to the second composite by direct coupling. Mechanically coupled to the semiconductor body. In particular, the first mirror structure may be formed on another auxiliary substrate. The first mirror structure and the further auxiliary substrate can be coupled to the first semiconductor body by direct coupling, immediately thereafter the further auxiliary substrate is removed. As a variant of this, the first mirror structure is formed by the first or second composite by an alternative process, for example by a coating process, before the first and second composites are bonded together by direct bonding. It may be provided directly on the material.

  The method described above is particularly suitable for the manufacture of the components described above. Thus, the features described in connection with the components can also be used in the method and vice versa.

  Further advantages of the components and methods, preferred embodiments, and further developments will become apparent from the exemplary embodiments described below in connection with FIGS. 1A-7.

Schematic of various method steps for manufacturing a component according to a first exemplary embodiment Schematic of various method steps for manufacturing a component according to a first exemplary embodiment Schematic of various method steps for manufacturing a component according to a first exemplary embodiment Schematic of various method steps for manufacturing a component according to a first exemplary embodiment Schematic of various method steps for manufacturing a component according to a first exemplary embodiment Schematic of various method steps for manufacturing a component according to a first exemplary embodiment Schematic of various method steps for manufacturing a component according to a first exemplary embodiment Schematic of various method steps for manufacturing a component, according to further exemplary embodiments. Schematic of various method steps for manufacturing a component, according to further exemplary embodiments. Schematic of various method steps for manufacturing a component, according to further exemplary embodiments. Schematic of various method steps for manufacturing a component, according to further exemplary embodiments. Schematic of several method steps for manufacturing a component according to a further exemplary embodiment Schematic of several method steps for manufacturing a component according to a further exemplary embodiment Schematic of several method steps for manufacturing a component according to a further exemplary embodiment Schematic view in cross-section of a component according to a first exemplary embodiment A schematic cross-sectional view of a further exemplary embodiment of a component A schematic cross-sectional view of a further exemplary embodiment of a component

  In the figures, identical, equivalent or equivalently acting elements are denoted by the same reference numerals. These figures are schematic and are therefore not necessarily proportional to the actual size. For the sake of clarity, the relatively small elements, and particularly the layer thicknesses, may be exaggerated and greatly illustrated.

  An exemplary embodiment of a method for manufacturing a component is schematically illustrated in FIGS. 1A-1G.

  FIG. 1A shows a first composite 20 comprising a substrate 1, a first semiconductor body 2 disposed thereon, and a first termination layer 31. The substrate 1 can be a growth substrate obtained by epitaxially growing the first semiconductor body 2 on the surface. For example, the substrate 1 is a silicon or sapphire substrate, such as a GaAs substrate. Alternatively, the substrate 1 may be a carrier other than the growth substrate.

  The first semiconductor body 2 includes a first semiconductor layer 21 facing the substrate 1, a second semiconductor layer 22, and a photoactive layer 23 disposed between these semiconductor layers. . The semiconductor layers 21 and 22 can be n- or p-conductive and can be n- or p-doped. In particular, the semiconductor layers 21 and / or 22 can be formed from several different semiconductor sublayers of different material composition, which are arranged on top of each other in the vertical direction. The active layer 23 is configured to generate electromagnetic radiation having a first peak wavelength. Preferably, the first semiconductor body 2 comprises or consists of a III-V or II-VI semiconductor compound material.

  The semiconductor body has a flat first main surface 201 facing the substrate 1. The first semiconductor body 2 has a structured second main surface 202 facing away from the substrate 1. The second main surface 202 is particularly formed by the surface of the second semiconductor layer 22. The first termination layer 31 in particular has a first main surface 301 that is directly joined to the first semiconductor body 2 and is also structured and faces towards the semiconductor body 2. In particular, the first main surface 301 of the first termination layer 31 and the second main surface 202 of the first semiconductor body 2 form a common structured junction.

  The first composite 20 has an exposed planar first connection surface 311, particularly formed by the surface of the first termination layer 31 facing away from the first semiconductor body 2. The first termination layer 31 is preferably formed from a radiation transmissive conductive material, for example from a transparent conductive oxide (TCO).

  The substrate 1 has a first main surface 11 facing the first semiconductor body 2 and a second main surface 12 facing away from the first semiconductor body 2, and the main surface of the substrate 1 Is flat. The first main surface 201 of the first semiconductor body 2 is also flat. The second main surface 202 can be generated by structuring, for example by so-called sphere-fishing (German: Kugelfischen), in which case the surface of the first semiconductor body 2 is structured, for example Roughened. This can be done dry-chemically without the use of a photoresist, in particular using small spheres in the nanometer range, in which case these spheres are applied to the second major surface 202 and then etched. This results in a separation structure in the form of ridges or depressions in the nanometer range on the second major surface 202. Such a sphere may have a diameter between 50 nm and 2 μm, including values at both ends, or between 50 nm and 1 μm, including values at both ends.

  The first termination layer 31 is preferably provided directly on the second main surface 202 after structuring, so that the first termination layer 31 faces the semiconductor body 2 and the first semiconductor body 2. The first main surface 301 has a structure in which the second main surface 202 is inverted. The first termination layer 31 can be provided directly on the first semiconductor body 2 by a coating process. In this case, the first termination layer 31 is then polished, for example by chemical mechanical planarization, The planar connection surface 311 can be formed. Referring to FIG. 1B, a second composite material 40 having an auxiliary substrate 9, a second semiconductor body 4 disposed thereon, and a second termination layer 32 is prepared. The auxiliary substrate 9 is in particular a growth substrate having a structured main surface 91. In particular, the auxiliary substrate 9 is a patterned sapphire substrate (PSS).

  A semiconductor body 4 comprising a first semiconductor layer 41, a second semiconductor layer 42 and a second active layer 43 is a structured main surface 402, which also faces the auxiliary substrate 9, the second semiconductor body 4. Can be applied epitaxially on the structured main surface 91. The second active layer 43 is configured to generate second peak wavelength electromagnetic radiation. Structurally, the second body 4 can be similar to the first semiconductor body 2. The second semiconductor body 4 has a first main surface 401 facing the second termination layer 32. First main surface 401 is flat. Although different from FIG. 1B, the first main surface 401 of the second semiconductor body 4 may be structured. The second composite 40 has a second planar connection surface 321, in particular formed by the exposed surface of the second termination layer 32. The second termination layer preferably comprises or consists of a radiation transmissive conductive material. The first termination layer 31 of the first composite material 20 and the second termination layer 32 of the second composite material 40 may be formed from the same material or have different material compositions.

  According to FIG. 1C, the first composite 20 is mechanically and electrically connected to the second composite 40 by direct bonding at the first planar connection surface 311 and the second planar connection surface 321. Connected to. A first transition zone 3 is formed comprising a first termination layer 31 and a second termination layer 32. The first transition zone 3 thus has a structured first main surface 301 facing the first semiconductor body 2. Within the first transition zone 3, the first planar connecting surface 311 and the second planar connecting surface 321 are directly adjacent to each other, and the first composite 20 and the second composite 40, A common planar internal joint 30 is defined between them. Due to the direct coupling, the common planar inner joint 30 between the first termination layer 31 and the second termination layer 32 does not contain a coupling material. In FIG. 1C, the common joint surface 30 is represented by a dotted line AA '. In particular, the first transition zone 30 is directly bonded to the first semiconductor body 2 and directly bonded to the second semiconductor body 4, and in particular does not contain an adhesion promoting bonding material or an adhesion promoting bonding layer. If the first termination layer 31 and the second termination layer 32 are formed from the same material, which is particularly radiolucent and conductive, the first transition zone 3 extends vertically from a single material. Can be formed continuously.

  In FIG. 1D, the auxiliary substrate 9 is separated from the second semiconductor body 4. The semiconductor body 4 has a structured second main surface 402 facing away from the first semiconductor body 2. In a further method step, on the second semiconductor body 4, in particular on the exposed structured second major surface 402 of the second semiconductor body, the second transition zone 5 in the second transition zone 5, for example by a coating process. One termination layer 51 is provided. The first termination layer 51 may comprise a radiolucent conductive material, for example the same material as the first transition zone 3. The first termination layer 51 of the second transition zone 5 is preferably in such a manner that the first termination layer 51 has a structured first major surface 501 facing the second semiconductor body 4, Provided on the structured second major surface 402. The first termination layer 51 can then be planarized in such a way that it has an exposed planar further first connection surface 511 facing away from the second semiconductor body 4.

  FIG. 1E shows a third composite 60 comprising a further auxiliary substrate 9, a third semiconductor body 6 and a further second termination layer 52, where the third composite 60 is a second composite 60. A further exposed planar second connection surface 521 formed by the surface of the further second termination layer 52 of the transition area 5 of The third semiconductor body 6 includes a first semiconductor layer 61, a second semiconductor layer 62, and a photoactive layer 63 disposed therebetween, and the active layer 63 has a third peak wavelength. Configured to generate electromagnetic radiation. The third composite 60 substantially corresponds to the exemplary embodiment of the second composite 40 shown in FIG. 1B.

  In FIG. 1F, the third composite 60 is mechanically and electrically connected to the second semiconductor body 4, preferably by direct bonding at further planar connection surfaces 511 and 521. The second transition area 5 is formed between the second semiconductor body 4 and the third semiconductor body 6, in which case the second transition area 5 is in particular the second semiconductor body 4 and the third semiconductor body 4. Directly bonded to both of the semiconductor bodies 6. The fabricated component thus does not include an adhesion promoting material or a bonding layer, for example in the region between the second transition zone 5 and the second semiconductor body 4 or the third semiconductor body 6.

  The second transition zone 5 comprises a further first termination layer 51 and a further second termination layer 52. The second transition zone 5 can be continuously formed from a radiation transmissive conductive material along the vertical direction. Similar to the first transition zone 3, the second transition zone 5 is a common plane formed by a further first planar connection surface 511 and a further second planar connection surface 521. You may have the internal joint part 50 of a shape. The internal joint surface 50 indicated by a dotted line BB ′ in FIG. 1F does not include any bonding material. As a result, the internal joint 50 forms a common joint between the further first termination layer 51 and the further second termination layer 52. The second transition zone 5 has a first major surface 501 that is formed in a structured manner and faces the second semiconductor body 4. The structuring of the first major surface 501 of the second transition zone 5 is given in particular by the structuring of the second major surface 402 of the second semiconductor body 4.

  The third semiconductor body 6 has a first major surface 601 facing the second transition zone 5 and is directly joined to the second major surface 502 of the second transition zone 5. According to FIG. 1F, the main surfaces 502 and 601 are flat. Unlike these, they can also be structured. The semiconductor body 6 has a structured second main surface 602 facing away from the second semiconductor body 4. In particular, the structuring of the second main surface 602 is provided by the structuring of the auxiliary substrate 9.

  FIG. 1G shows a component 100 that can be fabricated according to the method shown in FIGS. 1A-1F. A further auxiliary substrate 9 is removed from the third semiconductor body 6. The cover layer 7 can be formed on the second main surface 602 that is exposed as a result, and the cover layer 7 can serve as a contact layer or a protective layer. In particular, the cover layer 7 may have a radiation transmissive conductive material. The component 100 has a front surface 101, in particular formed by the main surface 71 of the cover layer 7. The front surface 101 forms in particular the radiation exit surface of the component 100. The component 100 has a rear surface 102, in particular formed by the second major surface 12 of the substrate 1.

  Each of the first semiconductor body 2, the second semiconductor body 4, and the third semiconductor body 6 has a photoactive layer disposed between two semiconductor layers. In particular, the semiconductor bodies 2, 4, and 6 are electrically connected in series. The first semiconductor layers 21, 41, and 61 may have the same material composition and may be n or p conductive and / or n or p doped at the same time. Similarly, the second semiconductor layers 22, 42, and 62 may have the same material composition and may be n or p conductive and / or n or p doped at the same time. The first active layer 23, the second active layer 43, and the third active layer 63 are formed in such a manner that they emit electromagnetic radiation of the same or different peak wavelengths during operation of the component 100. be able to.

  For example, the active layers 23, 43, and 63 can emit electromagnetic radiation having a peak wavelength in the red or green or yellow or blue spectral range. Alternatively, the active layers may be formed in such a way that they emit electromagnetic radiation of different peak wavelengths during operation of the component 100, where the different peak wavelengths are at least 30 nm from each other, eg It differs by at least 50 nm, or for example by at least 70 nm. For example, the first active layer 23 is formed to generate electromagnetic radiation having a first peak wavelength in the red spectral range, for example, between 600 nm and 780 nm. The second active layer 43 is formed to generate electromagnetic radiation having a second peak wavelength, for example, in the green spectral range, for example between 490 nm and 570 nm. The third active layer 63 is preferably formed to produce electromagnetic radiation having a third peak wavelength in the blue spectral range, for example between 430 nm and 490 nm. Preferably, the component 100 is configured such that the second active layer 43 is disposed between the first active layer 23 and the third active layer 63, where the third active layer is the component. And the first active layer 23 is closest to the substrate 1.

  The structured main surface of the first transition zone 3 and the structured main surface of the second transition zone 5 may have different sized separation structures. Preferably, the structured major surface 301 or 302 of the first transition zone 3 has a wider width compared to the second separated structure of the structured major surface 501 or 502 of the second transition zone 5. Having a first isolation structure. Preferably, the separation structure of the first transition zone 3 is smaller than the peak wavelength of the radiation generated in the first active layer 23 and at the same time from the second peak wavelength of the radiation generated in the second active layer 43. The average width is also large. The second isolation structure of the second transition zone 5 is preferably produced in the third active layer 63 at the same time smaller than the peak wavelength of the radiation produced in the first and / or second active layer. Having an average width greater than the third peak wavelength of radiation; With such a design of the components, longer wavelength radiation in the direction of the radiation exit surface 101 is transmitted through the transition zones 3 and 5 substantially unimpeded and thus substantially without loss, Shorter wavelength radiation scatters in the separation structure in the transition zone 3 and / or 5 or at least more intensely compared to longer wavelength radiation, resulting in the direction of the radiation exit surface 101. Deflected or reflected back.

  2A-2D illustrate a further example of a method 100 for manufacturing a component.

  The first composite material 20 shown in FIG. 2A corresponds to the first composite material 20 shown in FIG. 1A. Prior to connecting the first composite material 20 to the second composite material 40, the first mirror structure 33 is provided in the first semiconductor body 2. The first mirror structure 33 is formed in particular as part of the first transition zone 3. For example, the first mirror structure 33 may first be formed on the auxiliary substrate 9. On the mirror structure 33 there is in particular a termination layer 32 made of a conductive radiation transmissive material. The termination layer has an exposed surface 321 'which is formed in particular as a planar connecting surface 321'. The first mirror structure 33 arranged on the auxiliary substrate 9 is mechanically and in particular electrically, by direct coupling, to the first composite material 20, for example to the first termination layer 31 or to the first semiconductor. The body 2 can be connected. Alternatively, the first mirror structure 33 can be provided directly on the semiconductor body 2 using a coating process.

  In FIG. 2B, the auxiliary substrate 9 has been removed from the first mirror structure 33. The first transition zone 3 is particularly planar and has an internal joint surface 30 formed by the first connection surface 311 and the connection surface 321 ′ of the first mirror structure 33. After removing the auxiliary substrate 9 on which the first mirror structure 33 is arranged, the exposed surface 311 of the first transition zone 3, in particular the exposed surface 311 of the first termination layer 31, is planarized. can do.

  Preferably, the first mirror structure 33 is partially transparent and partially wavelength selective reflective. For example, the first mirror structure 33 includes first layers 331 and second layers 332 that are alternately arranged. The first layer 331 and the second layer 332 may be formed of materials having different refractive indexes. For example, the first layer 331 has a refractive index that differs from the refractive index of the second layer 332 by at least 0.3, such as at least 0.5 or 0.7. For example, the first layer 331 and / or the second layer 332 are each formed from a radiation transmissive conductive material.

  The exemplary embodiment of the method steps shown in FIG. 2C essentially corresponds to the exemplary embodiment of the method steps shown in FIGS. 1B and 1C. In contrast, the first composite 20 has a first semiconductor body 2 and a first mirror structure 33 disposed thereon, in which case the first mirror structure 33 is Along the vertical direction, it exists between the first semiconductor body 2 and the first exposed planar connection surface 311.

  The method steps shown in FIG. 2D essentially correspond to the method steps of the method for manufacturing the component shown in FIG. 1D. In contrast, the first transition zone 3 shows, in addition to the structured main surface 301, a first partially transparent and partially wavelength-selective mirror structure 33.

  FIG. 3 schematically shows a cross section of the first transition zone 3 between the first semiconductor body 2 and the second semiconductor body 4. According to this exemplary embodiment, the first mirror structure 33 has a plurality of through contacts 34 extending vertically through the first layer 331 and the second layer 332. The through contact 34 is preferably formed from a conductive material. In particular, the through contact 34 is formed from a conductive and radiation transmissive material.

  The second composite material 40 shown in FIG. 4A essentially corresponds to the second composite material 40 shown in FIG. 1B. In contrast, the auxiliary substrate 9 does not have a structured main surface 91 but has a flat main surface 91. The second semiconductor body 4 has a structured first main surface 401 facing away from the auxiliary substrate 9. After providing the second semiconductor body 4 on the auxiliary substrate 9, the first main surface 401 can be roughened, for example by an etching process or by so-called sphere fishing.

  The exemplary embodiment shown in FIG. 4B essentially corresponds to the exemplary embodiment shown in FIG. 1C with respect to method steps in component fabrication. In contrast, the second semiconductor body 4 has a structured first main surface 401 facing the first semiconductor body 2. The first transition zone 3 thus comprises a first structured main surface 301 facing the first semiconductor body 2 and a second structured main surface 302 facing the second semiconductor body 4. Have both. A third composite 60 having a third semiconductor body 6 and a second transition zone 5 can be formed similar to the exemplary embodiment shown in FIGS. 4A and 4B. The second transition zone 5, in particular comprising the second mirror structure 53, can also be formed in the same way as the method steps described in FIGS. 2A to 2D and FIG.

  FIG. 5 shows an exemplary embodiment of component 100 that essentially corresponds to the exemplary embodiment of component 100 shown in FIG. 1G. In contrast, the component 100 has an intermediate layer 10 disposed vertically between the substrate 1 and the first semiconductor body 2. The intermediate layer 10 is preferably formed as a mirror layer that may contain a metallic material such as silver or aluminum. In particular, the substrate 1 is different from the growth substrate. The substrate 1 may be formed from a conductive material. The component 100 can be in electrical contact with the outside via the front face 101 and via the rear face 102. The component 100 can thus be brought into electrical contact via the substrate 1, in particular via the rear surface 12 of the substrate 1.

  The exemplary embodiment of the component 100 shown in FIG. 6 essentially corresponds to the exemplary embodiment of the component shown in FIG. In contrast, the semiconductor bodies 2, 4 and 6 each have a first structured main surface 201, 401 and 601 facing the substrate 1. For this reason, the transition zones 3 and 5 each have a second structured main surface 302 and 502 facing the radiation exit surface 101. The intermediate layer 10 has a structured main surface facing the first semiconductor body 2. The intermediate layer 10 can serve as a buffer layer between the substrate 1 and the first semiconductor body 2.

  The exemplary embodiment of the component 100 shown in FIG. 7 essentially corresponds to the exemplary embodiment of the component shown in FIG. In contrast, transition zones 3 and 5 each have a mirror structure 33 or 53. The first mirror structure 33 in the first transition zone 3 and the second mirror structure 35 in the second transition zone 5 can be structurally similar. In particular, the transition zones 3 and 5 can be manufactured according to the method steps shown in FIGS. 2A to 2D.

  The first mirror structure 33 and / or the second mirror structure 35 can be formed in such a way that they act as Bragg mirrors, in particular as dichroic mirrors. Similar to the first mirror structure 33, the second mirror structure 53 may include a plurality of first layers 531 and second layers 532 arranged alternately. For example, the second mirror structure 53 is partially transparent and partially wavelength selective reflective. In this case, the second mirror structure 53 has a wavelength selectivity that is the same as that of the first mirror structure 33. May be different. Preferably, the first mirror structure 33 is formed in such a manner as to transmit electromagnetic radiation of the first peak wavelength and scatter and / or reflect electromagnetic radiation of the second peak wavelength. The second mirror structure 53 is preferably formed to transmit the first and / or second peak wavelength electromagnetic radiation and to scatter and / or reflect the third peak wavelength electromagnetic radiation.

  Similar to the first mirror structure 33, the second mirror structure 53 can be mechanically and electrically connected to the second semiconductor body 4 by direct coupling. The third semiconductor body 6 can also be mechanically and electrically connected to the second mirror structure 53 or to the second semiconductor body 4 by direct coupling. As a result, the second transition zone may have a common planar internal joint 50 formed by further planar connection surfaces 511 and 521 or 511 and 521 ′, in this case planar In particular, the internal joint 50 does not include an adhesion promoting material. Further planar connection surfaces 511 and 521 are formed in particular by the surface of the first termination layer 51 and the surface of the second termination layer 52 of the second transition zone 53, respectively. The termination layers 51 and 53 of the second transition zone 53 can be formed from a radiation transmissive conductive material.

  The components described herein are particularly formed as optoelectronic components having a plurality of semiconductor bodies stacked on top of each other. The semiconductor bodies stacked on top of each other can be manufactured individually in different method steps and in each case can have a diode structure with a photoactive layer. Improve component performance when a transition zone is formed between semiconductor bodies and the transition zone has a structured main surface or a mirror structure that is partially transparent and partially wavelength selective reflective Can be made.

  The description of the invention made with reference to the exemplary embodiments does not limit the invention to the exemplary embodiments. Rather, the invention includes any novel feature and any combination of features specifically including any combination of features in a claim, such that the feature or combination thereof is claimed or described in an illustrative implementation. This is true even if it is not explicitly shown in the form itself.

[Related applications]
The priority of German Patent Application No. 10 2016 113 002.8 is claimed, the content of which is incorporated herein by reference.

DESCRIPTION OF SYMBOLS 100 Component 101 Front surface of component 102 Rear surface of component 1 Substrate / carrier 10 Intermediate layer 11 First main surface of substrate 12 Second main surface of substrate 2 First semiconductor body 20 First composite material 201 First semiconductor First main surface of body 202 Second main surface of first semiconductor body 21 First semiconductor layer of first semiconductor body 22 Second semiconductor layer of first semiconductor body 23 First active layer 3 First transition zone 30 Internal interface of first transition zone 301 First major surface of first transition zone 302 Second major surface of first transition zone 31 First end of first transition zone Layer 311 First connection surface 32 Second termination layer of the first transition zone 321 Second connection surface 321 ′ Connection surface of the mirror structure 33 First mirror structure 34 Through contact 3 DESCRIPTION OF SYMBOLS 1 1st layer of 1st mirror structure 332 2nd layer of 1st mirror structure 4 2nd semiconductor body 40 2nd composite material 401 1st main surface 402 of 2nd semiconductor body 402 2nd Second main surface of semiconductor body 41 First semiconductor layer of second semiconductor body 411 First connection surface 42 Second semiconductor layer 421 of second semiconductor body 421 Second connection surface 43 Second active layer DESCRIPTION OF SYMBOLS 5 2nd transition area 50 Inner interface of 2nd transition area 501 1st main surface of 2nd transition area 502 2nd main surface of 2nd transition area 51 1st of 2nd transition area Termination layer 511 Further first connection surface 52 Second termination layer in the second transition zone 521 Further second connection surface 53 Second mirror structure 6 Third semiconductor body 60 Third composite 601 First First main surface 602 of semiconductor body 3 Second main surface of third semiconductor body 61 First semiconductor layer of third semiconductor body 62 Second semiconductor layer of third semiconductor body 63 Third active layer 7 Cover layer / contact layer 71 Cover layer / Main surface of contact layer 9 Auxiliary substrate 91 Main surface of auxiliary substrate

According to FIG. 1C, the first composite 20 is mechanically and electrically connected to the second composite 40 by direct bonding at the first planar connection surface 311 and the second planar connection surface 321. Connected to. A first transition zone 3 is formed comprising a first termination layer 31 and a second termination layer 32. The first transition zone 3 thus has a structured first main surface 301 facing the first semiconductor body 2. Within the first transition zone 3, the first planar connecting surface 311 and the second planar connecting surface 321 are directly adjacent to each other, and the first composite 20 and the second composite 40, A common planar internal joint 30 is defined between them. Due to the direct coupling, the common planar inner joint 30 between the first termination layer 31 and the second termination layer 32 does not contain a coupling material. In FIG. 1C, the common joint surface 30 is represented by a dotted line AA ′. The first transition zone 3 is in particular directly bonded to the first semiconductor body 2 and directly bonded to the second semiconductor body 4 and in particular does not contain an adhesion promoting bonding material or an adhesion promoting bonding layer. If the first termination layer 31 and the second termination layer 32 are formed from the same material, which is particularly radiolucent and conductive, the first transition zone 3 extends vertically from a single material. Can be formed continuously.

The first mirror structure 33 and / or the second mirror structure 53 can be formed in such a way that they act as Bragg mirrors, in particular as dichroic mirrors. Similar to the first mirror structure 33, the second mirror structure 53 may include a plurality of first layers 531 and second layers 532 arranged alternately. For example, the second mirror structure 53 is partially transparent and partially wavelength selective reflective. In this case, the second mirror structure 53 has a wavelength selectivity that is the same as that of the first mirror structure 33. May be different. Preferably, the first mirror structure 33 is formed in such a manner as to transmit electromagnetic radiation of the first peak wavelength and scatter and / or reflect electromagnetic radiation of the second peak wavelength. The second mirror structure 53 is preferably formed to transmit the first and / or second peak wavelength electromagnetic radiation and to scatter and / or reflect the third peak wavelength electromagnetic radiation.

Similar to the first mirror structure 33, the second mirror structure 53 can be mechanically and electrically connected to the second semiconductor body 4 by direct coupling. The third semiconductor body 6 can also be mechanically and electrically connected to the second mirror structure 53 or to the second semiconductor body 4 by direct coupling. As a result, the second transition zone may have a common planar internal joint 50 formed by further planar connection surfaces 511 and 521 or 511 and 521 ′, in this case planar In particular, the internal joint 50 does not include an adhesion promoting material. Further planar connection surfaces 511 and 521 are formed, in particular, by the surface of the first termination layer 51 and the surface of the second termination layer 52 of the second transition zone 5 , respectively. The termination layers 51 and 52 of the second transition zone 5 can be formed from a radiation transmissive conductive material.

DESCRIPTION OF SYMBOLS 100 Component 101 Front surface of component 102 Rear surface of component 1 Substrate / carrier 10 Intermediate layer 11 First main surface of substrate 12 Second main surface of substrate 2 First semiconductor body 20 First composite material 201 First semiconductor First main surface of body 202 Second main surface of first semiconductor body 21 First semiconductor layer of first semiconductor body 22 Second semiconductor layer of first semiconductor body 23 First active layer 3 First transition zone 30 Internal interface of first transition zone 301 First major surface of first transition zone 302 Second major surface of first transition zone 31 First end of first transition zone Layer 311 First connection surface 32 Second termination layer of the first transition zone 321 Second connection surface 321 ′ Connection surface of the mirror structure 33 First mirror structure 34 Through contact 3 DESCRIPTION OF SYMBOLS 1 1st layer of 1st mirror structure 332 2nd layer of 1st mirror structure 4 2nd semiconductor body 40 2nd composite material 401 1st main surface 402 of 2nd semiconductor body 402 2nd Second main surface of semiconductor body 41 First semiconductor layer of second semiconductor body 411 First connection surface 42 Second semiconductor layer 421 of second semiconductor body 421 Second connection surface 43 Second active layer DESCRIPTION OF SYMBOLS 5 2nd transition area 50 Inner interface of 2nd transition area 501 1st main surface of 2nd transition area 502 2nd main surface of 2nd transition area 51 1st of 2nd transition area Termination layer 511 Further first connection surface 52 Second termination layer 521 of the second transition zone 521 Further second connection surface 53 Second mirror structure
531 First layer of second mirror structure
532 Second layer 6 of second mirror structure 6 Third semiconductor body 60 Third composite 601 First main surface of third semiconductor body 602 Second main surface of third semiconductor body 61 Third The first semiconductor layer of the semiconductor body 62 The second semiconductor layer of the third semiconductor body 63 The third active layer 7 The cover layer / contact layer 71 The main surface of the cover layer / contact layer 9 The auxiliary substrate 91 The main of the auxiliary substrate surface

Claims (19)

A first semiconductor body (2) having a substrate (1), a first active layer (23), a second semiconductor body (4) having a second active layer (43), and a first transition; A component (100) comprising a zone (3),
The first active layer is configured to generate electromagnetic radiation of a first peak wavelength, and the second active layer is configured to generate electromagnetic radiation of a second peak wavelength; ,
The first transition zone is arranged between the first semiconductor body and the second semiconductor body in the vertical direction, directly adjacent to the first semiconductor body and the second semiconductor body; Directly adjacent to
The first transition zone comprises a conductive material that is radiolucent, at least partially transparent with respect to the radiation of the first peak wavelength, and the first semiconductor body comprises the first transition Electrically conductively connected to the second semiconductor body via a section;
The first transition zone comprises a structured main surface (301, 302) or a first partially transparent and partially wavelength selective reflective mirror structure (33);
Component (100). Said first transition zone (3) does not comprise an adhesion promoting material or does not comprise a tie layer;
The component of claim 1. The first transition zone (3) has a planar internal junction (30) between the first termination layer (31) and the second termination layer (32);
The first termination layer and / or the second termination layer of the first transition zone are formed from the radiation-transmissive conductive material;
The inner joint does not contain a binding material and is formed by a planar connection surface (311, 321) of the termination layer (31, 32);
The component according to claim 1 or 2. The first transition zone (3) comprises a structured main surface (301, 302) having a first separation structure;
The component according to claim 1. The first mirror structure (33) is formed to act as a dichroic mirror that transmits electromagnetic radiation of the first peak wavelength and scatters or reflects electromagnetic radiation of the second peak wavelength.
The component according to claim 1. The first mirror structure (33) comprises alternating first and second layers (331) and (332), the first layer being formed from a radiation transmissive conductive material. And having a refractive index that differs from the refractive index of the second layer by at least 0.3,
The component according to claim 1. The first mirror structure (33) includes a plurality of through contacts (34) extending vertically through the first layer (331) and the second layer (332), and the through contacts Is formed from a conductive material,
The component of claim 6. A third semiconductor body (6) comprising a third photoactive layer (63) for generating electromagnetic radiation of a third peak wavelength, wherein the second semiconductor body (4) comprises the first semiconductor body (4); Between the semiconductor body (2) and the third semiconductor body, the second semiconductor body is mechanically and electrically connected to the third semiconductor body via a second transition zone (5). Connected,
The component according to claim 1. The second transition zone (5) comprises a structured main surface (501, 502) having a second separation structure, wherein the second separation structure is smaller than the second peak wavelength and the second separation wavelength. Having an average width greater than the peak wavelength of 3,
The component of claim 8. The second transition zone (5) is partially transparent that transmits electromagnetic radiation of the first and second peak wavelengths and scatters or at least partially reflects the electromagnetic radiation of the third peak wavelength. Having a second mirror structure (53) that is partially wavelength selective reflective;
Component according to claim 8 or 9. The first peak wavelength is assigned to the red spectral range;
The second peak wavelength is assigned to the green spectral range;
The third peak wavelength is assigned to the blue spectral range;
The second transition zone (5) has a smaller lateral width compared to the first separation structure of the structured main surface (301, 302) of the first transition zone (3); Having a structured major surface (501, 502) comprising a second isolation structure;
The component according to any one of claims 8 to 10. The second transition zone (5) has a second partially transparent mirror structure (53) that is partially wavelength selective reflective, and with respect to wavelength selectivity, the second mirror structure ( 53) is different from the first mirror structure (33),
The component according to claim 8. Each of the first mirror structure (33) and the second mirror structure (53) includes a plurality of alternately arranged first layers (331, 531) and second layers (332, 532). Formed as a Bragg mirror with
The first layer (331) of the first mirror structure (33) and the first layer (531) of the second mirror structure (53) are each formed from a radiation transmissive conductive material; And
The second layer (332) of the first mirror structure (33) and the second layer (532) of the second mirror structure (53) have their layer thickness and / or their thickness Different from each other in terms of materials,
The component of claim 12. The radiation transmissive conductive material of the transition zone (3) is a transparent conductive oxide;
The component according to claim 1. The first transition zone (3) has a first partially transparent mirror structure (33) that is partially wavelength selective reflective, the first mirror structure comprising the first Formed to transmit peak wavelength electromagnetic radiation and to scatter or partially reflect said second peak wavelength electromagnetic radiation;
The component according to claim 1. The following steps:
A) preparing a first composite (20) comprising a substrate (1), a first semiconductor body (2) and a first termination layer (31),
The first composite has a first exposed planar connection surface (311) formed by the surface of the first termination layer;
The first semiconductor body is disposed between the substrate and the first planar connection surface and comprises a first photoactive layer (23);
B) providing a second composite (40) comprising an auxiliary substrate (9), a second semiconductor body (4) and a second termination layer (32),
The second composite comprises a second exposed planar connection surface (321) formed by the surface of the second termination layer;
The second semiconductor body is arranged between the auxiliary substrate and the second planar connection surface and comprises a second photoactive layer (43);
The first termination layer (31) and the second termination layer (32) each comprise a radiation transmissive conductive material;
C) mechanically and electrically connecting the first composite material to the second composite material by direct bonding at the first and second planar connecting surfaces to provide a transition zone (3) Forming the transition zone comprising the first termination layer and the second termination layer, the structured main surface (301, 302) or partially transparent and partially wavelength Having a mirror structure (33) that is selectively reflective;
D) separating the auxiliary substrate from the second composite material.
A method for manufacturing a component (100). The auxiliary substrate (9) has a structured main surface (91) on which the second semiconductor body (4) grows, and the second semiconductor body is exposed after the auxiliary substrate is separated. The main surface (401, 402) is
The method of claim 16. The second semiconductor body (4) is grown on the auxiliary substrate (90), and the exposed main surfaces (401, 402) of the second semiconductor body are made of a radiation transmissive conductive material. Structured before termination layers (32, 51) are formed on the exposed structured main surface of the second semiconductor body;
The method of claim 16. The first mirror structure (33) is formed by direct bonding before the first composite (20) is mechanically and electrically connected to the second composite (40) by direct bonding. Mechanically connected to the first semiconductor body (2),
The method of claim 16.

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