JP2019517744A - Perl太陽電池及びその製造方法 - Google Patents
Perl太陽電池及びその製造方法 Download PDFInfo
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- JP2019517744A JP2019517744A JP2019517747A JP2019517747A JP2019517744A JP 2019517744 A JP2019517744 A JP 2019517744A JP 2019517747 A JP2019517747 A JP 2019517747A JP 2019517747 A JP2019517747 A JP 2019517747A JP 2019517744 A JP2019517744 A JP 2019517744A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims description 12
- 238000010304 firing Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 21
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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- H01L31/02—Details
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- H01L31/02—Details
- H01L31/0236—Special surface textures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Sustainable Energy (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
20:第2導電性ペースト
210:基板
220:エミッタ層
230:反射防止膜
240:パッシベーション層
241:開口部
251:バスバー電極
252:金属層
253:BSF層
Claims (4)
- 太陽電池の基板;
前記基板の片面上に備えられ、前記基板の表面を露出させる複数の開口部を備えるパッシベーション層;
前記パッシベーション層上に備えられ、前記開口部が備えられた領域と重畳しない領域に備えられるバスバー電極;及び
前記複数の開口部をいずれも埋め込む形態で前記パッシベーション層上に備えられるBSF金属層を含んでなることを特徴とするPERL太陽電池。 - 前記複数の開口部が、上下及び左右方向に離間して備えられることを特徴とする請求項1に記載のPERL太陽電池。
- 太陽電池の基板を準備する段階;
前記基板の片面上にパッシベーション層を積層する段階;
前記パッシベーション層の一部を選択的に除去して基板の表面を露出させる複数の開口部を形成する段階;
前記開口部が備えられた領域と重畳しない領域のパッシベーション層上にバスバー電極の形成のための第1導電性ペーストを塗布する段階;
前記複数の開口部がいずれも埋め込まれるように前記パッシベーション層上にBSF金属層の形成のための第2導電性ペーストを塗布する段階;及び
基板を焼成してバスバー電極及びBSF金属層を形成する段階;を含んでなることを特徴とするPERL太陽電池の製造方法。 - 第1導電性ペーストはバスバー電極に変換され、第2導電性ペーストは金属層に変換され、且つ第2導電性ペーストの導電性物質がパッシベーション層の開口部を介して基板の内部へ拡散してBSF層が形成されることを特徴とする請求項3に記載のPERL太陽電池の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160078542A KR20180000498A (ko) | 2016-06-23 | 2016-06-23 | Perl 태양전지 및 그 제조방법 |
KR10-2016-0078542 | 2016-06-23 | ||
PCT/KR2017/006501 WO2017222292A1 (ko) | 2016-06-23 | 2017-06-21 | Perl 태양전지 및 그 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019517744A true JP2019517744A (ja) | 2019-06-24 |
Family
ID=60784236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019517747A Pending JP2019517744A (ja) | 2016-06-23 | 2017-06-21 | Perl太陽電池及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190348551A1 (ja) |
EP (1) | EP3454380A4 (ja) |
JP (1) | JP2019517744A (ja) |
KR (1) | KR20180000498A (ja) |
WO (1) | WO2017222292A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265512A (zh) * | 2019-05-31 | 2019-09-20 | 苏州腾晖光伏技术有限公司 | 一种太阳能电池背面局域掺杂的掺杂方法 |
CN111129176A (zh) * | 2019-12-20 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | 用于制造太阳能电池的方法和太阳能电池 |
CN115425100A (zh) * | 2022-09-21 | 2022-12-02 | 通威太阳能(眉山)有限公司 | 一种太阳电池 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008078771A1 (ja) * | 2006-12-26 | 2008-07-03 | Kyocera Corporation | 太陽電池素子及び太陽電池素子の製造方法 |
KR101578356B1 (ko) * | 2009-02-25 | 2015-12-17 | 엘지전자 주식회사 | 후면전극형 태양전지 및 그 제조방법 |
KR101139458B1 (ko) * | 2009-06-18 | 2012-04-30 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
WO2013000026A1 (en) * | 2011-06-30 | 2013-01-03 | Newsouth Innovations Pty Limited | Dielectric structures in solar cells |
CN104185874A (zh) * | 2012-01-16 | 2014-12-03 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 用于具有局部打开的通孔的背面钝化的电池的铝导体浆料 |
KR20140136555A (ko) * | 2013-05-20 | 2014-12-01 | 현대중공업 주식회사 | 양면수광형 perl 태양전지 및 그 제조방법 |
US20150073847A1 (en) * | 2013-09-12 | 2015-03-12 | Pedro Gonzalez | Dispatch voip system |
-
2016
- 2016-06-23 KR KR1020160078542A patent/KR20180000498A/ko not_active Application Discontinuation
-
2017
- 2017-06-21 EP EP17815705.3A patent/EP3454380A4/en not_active Withdrawn
- 2017-06-21 US US16/307,577 patent/US20190348551A1/en not_active Abandoned
- 2017-06-21 WO PCT/KR2017/006501 patent/WO2017222292A1/ko unknown
- 2017-06-21 JP JP2019517747A patent/JP2019517744A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20180000498A (ko) | 2018-01-03 |
EP3454380A1 (en) | 2019-03-13 |
US20190348551A1 (en) | 2019-11-14 |
EP3454380A4 (en) | 2019-10-16 |
WO2017222292A1 (ko) | 2017-12-28 |
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