JP2019218621A - 基板載置台及び成膜装置 - Google Patents
基板載置台及び成膜装置 Download PDFInfo
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- JP2019218621A JP2019218621A JP2018119138A JP2018119138A JP2019218621A JP 2019218621 A JP2019218621 A JP 2019218621A JP 2018119138 A JP2018119138 A JP 2018119138A JP 2018119138 A JP2018119138 A JP 2018119138A JP 2019218621 A JP2019218621 A JP 2019218621A
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- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 230000008021 deposition Effects 0.000 title description 2
- 230000003028 elevating effect Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000011553 magnetic fluid Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
成膜装置の構成例について説明する。図1は、成膜装置の構成例を示す概略断面図である。
(第1の実施形態)
第1の実施形態のステージについて説明する。図2は、第1の実施形態のステージを示す概略断面図である。
第2の実施形態のステージについて説明する。第2の実施形態のステージは、水平移動機構を動作させる駆動源が処理容器の外部に設けられている。図3は、第2の実施形態のステージを示す概略断面図である。
12 処理容器
18、100、200 ステージ
18a、110、210 軸部
18b、120、220 ベース部
18c、130、230 水平移動機構
131、231 ガイド部
132、232 移動部
140、240 ベローズ
160、260 駆動源
W 基板
Claims (8)
- 処理容器の底面に対して回転可能に配設された軸部と、
前記軸部上に設けられたベース部と、
前記ベース部に取り付けられ、前記処理容器内で基板を前記底面に対して水平方向に移動させる水平移動機構と、
を有する、
基板載置台。 - 前記水平移動機構は、
両端が前記ベース部に固定されたガイド部と、
前記ガイド部に対して前記ガイド部の長手方向に移動可能な移動部と、
を有する、
請求項1に記載の基板載置台。 - 一端が前記ベース部に接続され、他端が前記移動部に接続されて、前記ガイド部を覆うベローズを有する、
請求項2に記載の基板載置台。 - 前記処理容器の内部に設けられ、前記水平移動機構を動作させる駆動源を有する、
請求項1乃至3のいずれか一項に記載の基板載置台。 - 前記処理容器の外部に設けられ、前記水平移動機構を動作させる駆動源を有する、
請求項1乃至3のいずれか一項に記載の基板載置台。 - 前記水平移動機構を鉛直方向に移動させる昇降機構を有する、
請求項1乃至5のいずれか一項に記載の基板載置台。 - 処理容器と、
前記処理容器内に設けられた基板載置台と、
を有し、
前記基板載置台は、
前記処理容器の底面に対して回転可能に配設された軸部と、
前記軸部上に設けられたベース部と、
前記ベース部に取り付けられ、前記処理容器内で基板を前記底面に対して水平方向に移動させる水平移動機構と、
を有する、
成膜装置。 - 前記基板載置台の上方に配設されたスリット板と、
前記スリット板の上方に配設されたターゲットと、
を有する、
請求項7に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018119138A JP2019218621A (ja) | 2018-06-22 | 2018-06-22 | 基板載置台及び成膜装置 |
US16/442,721 US20190390326A1 (en) | 2018-06-22 | 2019-06-17 | Substrate stage and film forming apparatus |
KR1020190073122A KR102293787B1 (ko) | 2018-06-22 | 2019-06-19 | 기판 배치대 및 성막 장치 |
TW108121455A TW202012667A (zh) | 2018-06-22 | 2019-06-20 | 基板載置台及成膜裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018119138A JP2019218621A (ja) | 2018-06-22 | 2018-06-22 | 基板載置台及び成膜装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2019218621A true JP2019218621A (ja) | 2019-12-26 |
Family
ID=68981472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018119138A Pending JP2019218621A (ja) | 2018-06-22 | 2018-06-22 | 基板載置台及び成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20190390326A1 (ja) |
JP (1) | JP2019218621A (ja) |
KR (1) | KR102293787B1 (ja) |
TW (1) | TW202012667A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3831966A1 (en) | 2019-12-03 | 2021-06-09 | Daido Steel Co., Ltd. | Steel for mold, and mold |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11289311B2 (en) | 2018-10-23 | 2022-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for reducing vacuum loss in an ion implantation system |
US20200135464A1 (en) * | 2018-10-30 | 2020-04-30 | Applied Materials, Inc. | Methods and apparatus for patterning substrates using asymmetric physical vapor deposition |
RU2703318C1 (ru) | 2019-04-15 | 2019-10-16 | Акционерное Общество "Российский Концерн По Производству Электрической И Тепловой Энергии На Атомных Станциях" (Ао "Концерн Росэнергоатом") | Радиационно-стойкая аустенитная сталь для внутрикорпусной выгородки ввэр |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH023465U (ja) * | 1988-06-18 | 1990-01-10 | ||
JP2003017543A (ja) * | 2001-06-28 | 2003-01-17 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法、半導体装置の製造方法および搬送装置 |
JP2003115527A (ja) * | 2001-10-05 | 2003-04-18 | Sumitomo Heavy Ind Ltd | 基板移動装置 |
JP2013253316A (ja) * | 2012-05-09 | 2013-12-19 | Iza Corp | スパッタリング装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100453657B1 (ko) * | 2002-01-23 | 2004-10-20 | 에이엔지 주식회사 | 진공내부의 직선이동장치 |
JP2010539674A (ja) * | 2007-09-18 | 2010-12-16 | ビーコ・インスツルメンツ・インコーポレーテッド | エネルギー粒子ビームを使用した基板の表面処理方法及び装置 |
JP2015067856A (ja) | 2013-09-27 | 2015-04-13 | シーゲイト テクノロジー エルエルシー | マグネトロンスパッタ装置 |
US10345723B2 (en) * | 2016-02-24 | 2019-07-09 | Asml Netherlands B.V. | Substrate handling system and lithographic apparatus |
-
2018
- 2018-06-22 JP JP2018119138A patent/JP2019218621A/ja active Pending
-
2019
- 2019-06-17 US US16/442,721 patent/US20190390326A1/en not_active Abandoned
- 2019-06-19 KR KR1020190073122A patent/KR102293787B1/ko active IP Right Grant
- 2019-06-20 TW TW108121455A patent/TW202012667A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH023465U (ja) * | 1988-06-18 | 1990-01-10 | ||
JP2003017543A (ja) * | 2001-06-28 | 2003-01-17 | Hitachi Kokusai Electric Inc | 基板処理装置、基板処理方法、半導体装置の製造方法および搬送装置 |
JP2003115527A (ja) * | 2001-10-05 | 2003-04-18 | Sumitomo Heavy Ind Ltd | 基板移動装置 |
JP2013253316A (ja) * | 2012-05-09 | 2013-12-19 | Iza Corp | スパッタリング装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3831966A1 (en) | 2019-12-03 | 2021-06-09 | Daido Steel Co., Ltd. | Steel for mold, and mold |
Also Published As
Publication number | Publication date |
---|---|
TW202012667A (zh) | 2020-04-01 |
KR102293787B1 (ko) | 2021-08-24 |
US20190390326A1 (en) | 2019-12-26 |
KR20200000356A (ko) | 2020-01-02 |
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