JP2019186496A5 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
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- JP2019186496A5 JP2019186496A5 JP2018078955A JP2018078955A JP2019186496A5 JP 2019186496 A5 JP2019186496 A5 JP 2019186496A5 JP 2018078955 A JP2018078955 A JP 2018078955A JP 2018078955 A JP2018078955 A JP 2018078955A JP 2019186496 A5 JP2019186496 A5 JP 2019186496A5
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- Prior art keywords
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- oxide
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- insulator
- conductor
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- 239000004065 semiconductor Substances 0.000 title claims 9
- 239000012212 insulator Substances 0.000 claims 8
- 239000004020 conductor Substances 0.000 claims 3
- 239000011701 zinc Substances 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Claims (8)
前記第１の絶縁体上の第１の酸化物と、
前記第１の酸化物上の第２の酸化物と、
前記第２の酸化物上の第３の酸化物および第４の酸化物と、
前記第２の酸化物上の第５の酸化物と、
前記第５の酸化物上の第２の絶縁体と、
前記第２の絶縁体上に位置し、前記第２の酸化物と重なる導電体と、を有し、
前記第２の酸化物は、第１の領域、第２の領域、および前記第１の領域と前記第２の領域の間に位置する第３の領域を有し、
前記第１の領域、および前記第２の領域は、それぞれ前記第３の領域よりも抵抗が低い領域を有し、
前記第３の酸化物は、前記第１の領域と重畳し、かつ前記第３の領域と重畳する領域を有し、
前記第４の酸化物は、前記第２の領域と重畳し、かつ前記第３の領域と重畳する領域を有する、半導体装置。 With the first insulator,
With the first oxide on the first insulator,
With the second oxide on the first oxide,
With the third oxide and the fourth oxide on the second oxide,
With the fifth oxide on the second oxide,
With the second insulator on the fifth oxide,
It has a conductor that is located on the second insulator and overlaps with the second oxide.
The second oxide has a first region, a second region, and a third region located between the first region and the second region.
The first region and the second region each have a region having a lower resistance than the third region.
The third oxide has a region that overlaps with the first region and overlaps with the third region.
The fourth oxide may overlap the second region and has a region overlapping with the third region, a semi-conductor device.
前記第１の領域と重畳する前記第３の酸化物は、前記第３の領域と重畳する前記第３の酸化物よりも抵抗が低く、
前記第２の領域と重畳する前記第４の酸化物は、前記第３の領域と重畳する前記第４の酸化物よりも抵抗が低い、半導体装置。 In claim 1,
The third oxide superimposing on the first region has a lower resistance than the third oxide superimposing on the third region.
Wherein the fourth oxide which overlaps with the second region has a lower resistance than the said fourth oxide of the third to the area and superimposed, semi conductor device.
前記第１の絶縁体上の第１の酸化物と、
前記第１の酸化物上の第２の酸化物と、
前記第２の酸化物上の第３の酸化物および第４の酸化物と、
前記第２の酸化物上の第５の酸化物と、
前記第５の酸化物上の第２の絶縁体と、
前記第２の絶縁体上に位置し、前記第２の酸化物と重なる導電体と、を有し、
前記第２の酸化物は、第１の領域、第２の領域、および前記第１の領域と前記第２の領域の間に位置する第３の領域を有し、
前記第１の領域、および前記第２の領域は、それぞれ前記第３の領域よりも結晶性が低い領域を有し、
前記第３の酸化物は、前記第１の領域と重畳し、かつ前記第３の領域と重畳する領域を有し、
前記第４の酸化物は、前記第２の領域と重畳し、かつ前記第３の領域と重畳する領域を有する、半導体装置。 With the first insulator,
With the first oxide on the first insulator,
With the second oxide on the first oxide,
With the third oxide and the fourth oxide on the second oxide,
With the fifth oxide on the second oxide,
With the second insulator on the fifth oxide,
It has a conductor that is located on the second insulator and overlaps with the second oxide.
The second oxide has a first region, a second region, and a third region located between the first region and the second region.
The first region and the second region each have a region having a lower crystallinity than the third region.
The third oxide has a region that overlaps with the first region and overlaps with the third region.
The fourth oxide may overlap the second region and has a region overlapping with the third region, a semi-conductor device.
前記第１の領域と重畳する前記第３の酸化物は、前記第３の領域と重畳する前記第３の酸化物よりも結晶性が低く、
前記第２の領域と重畳する前記第４の酸化物は、前記第３の領域と重畳する前記第４の酸化物よりも結晶性が低い、半導体装置。 In claim 3,
The third oxide superimposing on the first region has lower crystallinity than the third oxide superimposing on the third region.
The fourth oxide which overlaps with the second region is less crystalline than the fourth oxide of overlapping the third region, a semi-conductor device.
前記導電体は、前記第３の酸化物および前記第４の酸化物と重畳する領域を有する、半導体装置。 In any one of claims 1 to 5,
The conductor is a semiconductor device having a region that overlaps with the third oxide and the fourth oxide.
前記第２の酸化物は、Ｉｎと、元素Ｍ（ＭはＡｌ、Ｇａ、Ｙ、またはＳｎ）と、Ｚｎと、を有する、半導体装置。 In any one of claims 1 to 6,
The second oxides have a In, the element M (M is Al, Ga, Y or Sn,) and, with Zn, a semi-conductor device.
前記第１の領域、および前記第２の領域は、リン、およびホウ素の一方を含む、半導体装置。 In any one of claims 1 to 7,
Said first region, and said second region includes one of phosphorus, and boron, semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018078955A JP7046692B2 (en) | 2018-04-17 | 2018-04-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018078955A JP7046692B2 (en) | 2018-04-17 | 2018-04-17 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019186496A JP2019186496A (en) | 2019-10-24 |
| JP2019186496A5 true JP2019186496A5 (en) | 2021-05-06 |
| JP7046692B2 JP7046692B2 (en) | 2022-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018078955A Active JP7046692B2 (en) | 2018-04-17 | 2018-04-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7046692B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009016469A (en) * | 2007-07-03 | 2009-01-22 | Mitsubishi Electric Corp | Semiconductor apparatus and method of manufacturing the same |
| KR20160114511A (en) | 2015-03-24 | 2016-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
| TWI693719B (en) | 2015-05-11 | 2020-05-11 | 日商半導體能源研究所股份有限公司 | Manufacturing method of semiconductor device |
| WO2017081579A1 (en) * | 2015-11-13 | 2017-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
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2018
- 2018-04-17 JP JP2018078955A patent/JP7046692B2/en active Active
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