JP2019186393A - Semiconductor device and manufacturing method thereof - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000001816 cooling Methods 0.000 claims abstract description 134
- 239000000110 cooling liquid Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000002826 coolant Substances 0.000 claims description 102
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- 230000008878 coupling Effects 0.000 abstract 5
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- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
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- 239000000463 material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
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本発明は、発熱型半導体を有するパワーモジュールを冷却する冷却機能を有する半導体装置およびその製造方法に関する。 The present invention relates to a semiconductor device having a cooling function for cooling a power module having a heat-generating semiconductor and a method for manufacturing the same.
この明細書および特許請求の範囲において、図２〜図４の上下を「上下」というものとする。 In this specification and claims, the top and bottom of FIGS.
たとえば、電力変換装置に用いられるＩＧＢＴ（Insulated Gate Bipolar Transistor）などの発熱型半導体を有するパワーモジュールを冷却する場合、放熱に大きなスペースを確保することができる定置設備においては強制空冷式の冷却装置を用いることも可能であるが、電気自動車、ハイブリッド自動車、電車などの限られたスペースしか確保できない場合には、冷却液によりパワーモジュールを冷却する必要があり、液冷式の冷却器を備えた半導体装置が種々提案されている。 For example, when cooling a power module having a heat-generating semiconductor such as an IGBT (Insulated Gate Bipolar Transistor) used in a power conversion device, a forced air cooling type cooling device is used in a stationary facility that can secure a large space for heat dissipation. Although it is possible to use it, it is necessary to cool the power module with a coolant when a limited space such as an electric vehicle, a hybrid vehicle, and a train can be secured. A semiconductor equipped with a liquid-cooled cooler Various devices have been proposed.
ところで、近年、パワーモジュールにおいては、大電力を扱うようになって発熱量が極めて多くなる傾向にあり、パワーモジュールを上下両面から冷却しうる半導体装置が提案されている。 By the way, in recent years, power modules tend to handle a large amount of power and the amount of heat generated tends to be extremely large, and semiconductor devices capable of cooling the power module from both the upper and lower surfaces have been proposed.
たとえば、特許文献１には、発熱型半導体を有するパワーモジュールと、上下両壁および側壁を有するとともに内部に冷却液通路を有し、かつ上壁がパワーモジュールの下面側に熱的に接触する下冷却部と、上下両壁および側壁を有するとともに内部に冷却液通路を有し、かつ下壁がパワーモジュールの上面側に熱的に接触する上冷却部とを備えており、下冷却部の上壁の一端部に、上方に突出しかつ上端面が上冷却部の下面に当接した上方突出部が一体に設けられ、上方突出部に、上端が上方突出部の上端面に開口するとともに下端が冷却液通路内に開口した冷却液流出路が形成され、下冷却部の側壁における上方突出部とは反対側の端部に、冷却液通路内に冷却液を供給する冷却液入口が形成され、上冷却部の下壁下面における上方突出部側の端部に、上端が冷却液通路内に開口するとともに下端が上壁下面に開口した冷却液流入路が形成され、上冷却部の側壁における冷却液流入路とは反対側の端部に、冷却液通路内から冷却液を排出する冷却液出口が形成され、下冷却部の冷却液流出路の上端開口が上冷却部の冷却液流入路の下端開口に合致するように、下冷却部の上方突出部の上端面が上冷却部の下壁下面に接合されている半導体装置が記載されている。
For example,
しかしながら、特許文献１に記載の半導体装置においては、下冷却部の冷却液流出路の上端開口と上冷却部の冷却液流入路の下端開口との接続部からの冷却液の漏れを完全に防止した状態で、下冷却部の上方突出部の上端面と上冷却部の下壁下面とを接合する作業が相当に困難を伴う作業であるために、生産性が低下するという問題があった。
However, in the semiconductor device described in
本発明は、上記問題を解決し、生産性を向上できると共にパワーモジュールを効率よく冷却できる半導体装置およびその製造方法を提供することを目的とする。 An object of the present invention is to provide a semiconductor device that can solve the above-described problems, can improve productivity, and can efficiently cool a power module, and a manufacturing method thereof.
前記目的を達成するために、本発明は以下の手段を提供する。 In order to achieve the above object, the present invention provides the following means.
［１］少なくとも１つの発熱型半導体を有するパワーモジュールと、パワーモジュールを上下から冷却するＵ字状冷却器と、を備えた半導体装置であって、
前記冷却器は、
上下両壁および側壁を有するとともに内部に冷却液通路を有し、かつ下壁が前記パワーモジュールの上面側に接触する上冷却部と、
上下両壁および側壁を有するとともに内部に冷却液通路を有し、かつ上壁が前記パワーモジュールの下面側に接触する下冷却部と、
内外両壁および側壁を有するとともに内部に前記上下両冷却部の冷却液通路同士を通じさせる連通路を有し、かつ前記上下両冷却部を連結する連結部と、を備えてなり、
前記冷却器における上冷却部の下壁と下冷却部の上壁と連結部の内壁とが、１枚の金属板により一体に形成されると共に、前記冷却器における上冷却部の上壁と下冷却部の下壁と連結部の外壁とが、１枚の金属板により一体に形成されていることを特徴とする半導体装置。
[1] A semiconductor device comprising a power module having at least one exothermic semiconductor, and a U-shaped cooler for cooling the power module from above and below,
The cooler is
An upper cooling section having both upper and lower walls and side walls, and having a coolant passage therein, and a lower wall in contact with the upper surface side of the power module;
A lower cooling part having both upper and lower walls and side walls and having a coolant passage therein, and the upper wall contacting the lower surface side of the power module;
The inner and outer walls and side walls, and a communication passage that allows the coolant passages of the upper and lower cooling parts to pass through each other, and a connecting part that connects the upper and lower cooling parts.
The lower wall of the upper cooling part in the cooler, the upper wall of the lower cooling part, and the inner wall of the connecting part are integrally formed by a single metal plate, and the upper wall and the lower wall of the upper cooling part in the cooler are integrally formed. A semiconductor device, wherein a lower wall of a cooling portion and an outer wall of a connecting portion are integrally formed of a single metal plate.
［２］前記冷却器の上下両冷却部のうちのいずれか一方の冷却部の冷却液通路における連結部とは反対側の端部が、長手方向を当該冷却部の冷却液通路での冷却液流れ方向および上下方向と直角をなす方向に向けた入口ヘッダに通じさせられると共に、他方の冷却部の冷却液通路における連結部とは反対側の端部が、長手方向を前記入口ヘッダと同一方向に向けた出口ヘッダに通じさせられ、
前記入口ヘッダおよび前記出口ヘッダは、それぞれ上下両壁および周壁を有し、前記入口ヘッダの長手方向の一端部に上下方向のいずれか一方に開口した冷却液入口が形成され、前記出口ヘッダの長手方向における前記冷却液入口と同じ側の一端部に、平面視において前記入口ヘッダの冷却液入口が形成された部分からずれたずれ部分が設けられるとともに、前記ずれ部分に、上下方向のうち冷却液入口と同じ方向に開口した冷却液出口が形成され、
前記入口ヘッダ内に冷却液を供給する入口部材が前記冷却液入口と通じるように前記入口ヘッダに接合され、前記出口ヘッダ内から冷却液を排出する出口部材が前記冷却液出口と通じるように前記出口ヘッダに接合されている前項１に記載の半導体装置。
[2] The cooling liquid passage in the cooling liquid passage of the cooling section of the cooling section of either one of the upper and lower cooling sections of the cooler has a longitudinal direction in the cooling liquid passage of the cooling section. The end of the cooling liquid passage of the other cooling part opposite to the connection part is connected to the inlet header in the direction perpendicular to the flow direction and the vertical direction, and the longitudinal direction is the same direction as the inlet header. To the exit header towards
The inlet header and the outlet header have both upper and lower walls and a peripheral wall, respectively, and a coolant inlet opening in one of the vertical directions is formed at one end in the longitudinal direction of the inlet header. In the one end portion on the same side as the coolant inlet in the direction, a shift portion shifted from the portion where the coolant inlet of the inlet header is formed in a plan view is provided, and the coolant in the vertical direction is provided in the shift portion. A coolant outlet opening in the same direction as the inlet is formed,
An inlet member that supplies a coolant into the inlet header is joined to the inlet header so as to communicate with the coolant inlet, and an outlet member that discharges the coolant from within the outlet header communicates with the coolant outlet. 2. The semiconductor device according to
［３］前記冷却器を複数有し、これら複数の冷却器は、１つの入口ヘッダおよび１つの出口ヘッダの長手方向に間隔をおいて配置されると共に、前記入口ヘッダおよび前記出口ヘッダと一体に設けられ、
全冷却器において、上下両冷却部のうちのいずれか一方の冷却部の冷却液通路における連結部とは反対側の端部が、前記入口ヘッダに通じさせられると共に、他方の冷却部の冷却液通路における連結部とは反対側の端部が、前記出口ヘッダに通じさせられている前項２に記載の半導体装置。
[3] A plurality of the coolers are provided, and the plurality of coolers are arranged at intervals in the longitudinal direction of one inlet header and one outlet header, and are integrated with the inlet header and the outlet header. Provided,
In the entire cooler, an end of the cooling liquid passage of either one of the upper and lower cooling parts opposite to the connecting part is communicated with the inlet header and the cooling liquid of the
［４］前記冷却器の上下両冷却部の冷却液通路内に、パワーモジュールから発せられる熱を受けて冷却液通路内を流れる冷却液に放熱する放熱具が設けられている前項１〜３のいずれか１項に記載の半導体装置。
[4] The radiators according to the preceding
［５］前項１に記載の半導体装置を製造する方法であって、
パワーモジュールを準備する工程と、
上冷却部の下壁を形成する第１下壁形成部、下冷却部の上壁を形成する第１上壁形成部、および第１下壁形成部と第１上壁形成部を一体に連結するとともに連結部の内壁を形成する内壁形成部を有し、かつ第１下壁形成部および第１上壁形成部が同一平面内に位置している第１壁と、上冷却部の上壁を形成する第２上壁形成部、下冷却部の下壁を形成する第２下壁形成部、および第２上壁形成部と第２下壁形成部とを一体に連結するとともに連結部の外壁を形成する外壁形成部を有する第２壁と、第１壁の第１下壁形成部の両側縁部と第２壁の第２上壁形成部の両側縁部、第１壁の第１上壁形成部の両側縁部と第２壁の第２下壁形成部の両側縁部、および第１壁の内壁形成部の両側縁部と第２壁の外壁形成部の両側縁部とをそれぞれ連結し、かつ上冷却部、下冷却部および連結部の側壁を形成する第３壁とを備えた中空体を準備する工程と、
前記パワーモジュールを、その上面及び下面のうちのいずれか一方の面が、前記中空体の第１壁における第１下壁形成部および第１上壁形成部のうちのいずれか一方の上に接触するように配置した後、前記中空体を第１壁の内壁形成部および第２壁の外壁形成部の部分でＵ字状に曲げることによって、該中空体の第１下壁形成部および第１上壁形成部のうちのいずれか他方を前記パワーモジュールの上面及び下面のうちの他方の面に接触させると共に、上下両冷却部および連結部を備えたＵ字状冷却器を形成する工程と、を含むことを特徴とする半導体装置の製造方法。
[5] A method of manufacturing the semiconductor device according to
Preparing a power module;
The first lower wall forming part that forms the lower wall of the upper cooling part, the first upper wall forming part that forms the upper wall of the lower cooling part, and the first lower wall forming part and the first upper wall forming part are integrally connected. A first wall having an inner wall forming portion that forms an inner wall of the connecting portion, and wherein the first lower wall forming portion and the first upper wall forming portion are located in the same plane, and the upper wall of the upper cooling portion The second upper wall forming part forming the lower wall, the second lower wall forming part forming the lower wall of the lower cooling part, and the second upper wall forming part and the second lower wall forming part are integrally connected and A second wall having an outer wall forming portion forming an outer wall, both side edges of the first lower wall forming portion of the first wall, both side edges of the second upper wall forming portion of the second wall, and the first of the first wall. Both side edges of the upper wall forming part, both side edges of the second lower wall forming part of the second wall, and both side edges of the inner wall forming part of the first wall and both side edges of the outer wall forming part of the second wall Concatenate each One on the cooling unit, a step of preparing a hollow body and a third wall forming a side wall of the lower cooling portion and connecting portion,
Either one of the upper surface and the lower surface of the power module is in contact with one of the first lower wall forming portion and the first upper wall forming portion of the first wall of the hollow body. The hollow body is bent into a U-shape at the inner wall forming portion of the first wall and the outer wall forming portion of the second wall, thereby forming the first lower wall forming portion and the first of the hollow body. A step of contacting one of the upper wall forming portions with the other of the upper and lower surfaces of the power module, and forming a U-shaped cooler including both upper and lower cooling portions and a connecting portion; A method for manufacturing a semiconductor device, comprising:
［６］前項２に記載の半導体装置を製造する方法であって、
パワーモジュールを準備する工程と、
上冷却部の下壁を形成する第１下壁形成部、下冷却部の上壁を形成する第１上壁形成部、前記第１下壁形成部と前記第１上壁形成部を一体に連結するとともに連結部の内壁を形成する内壁形成部、入口ヘッダの上壁および下壁のうちいずれか一方の壁を形成する第１入口ヘッダ壁形成部、ならびに出口ヘッダの上壁および下壁のうち前記入口ヘッダの前記一方の壁と対向する一方の壁を形成する第１出口ヘッダ壁形成部を有し、かつ前記第１下壁形成部および前記第１上壁形成部が同一平面内に位置している第１壁と、上冷却部の上壁を形成する第２上壁形成部、下冷却部の下壁を形成する第２下壁形成部、前記第２上壁形成部と前記第２下壁形成部とを一体に連結するとともに連結部の外壁を形成する外壁形成部、入口ヘッダの上壁および下壁のうち他方の壁を形成する第２入口ヘッダ壁形成部、ならびに出口ヘッダの上壁および下壁のうち他方の壁を形成する第２出口ヘッダ壁形成部を有する第２壁と、前記第１壁の第１下壁形成部の両側縁部と前記第２壁の第２上壁形成部の両側縁部、前記第１壁の第１上壁形成部の両側縁部と前記第２壁の第２下壁形成部の両側縁部、前記第１壁の内壁形成部の両側縁部と前記第２壁の外壁形成部の両側縁部、前記第１壁の第１入口ヘッダ壁形成部の周縁部と前記第２壁の第２入口ヘッダ壁形成部の周縁部、および前記第１壁の第１出口ヘッダ壁形成部の周縁部と前記第２壁の第２出口ヘッダ壁形成部の周縁部とをそれぞれ連結し、かつ上冷却部の側壁、下冷却部の側壁、連結部の側壁、入口ヘッダの周壁および出口ヘッダの周壁を形成する第３壁と、を備えた中空体を準備する工程と、
前記パワーモジュールを、その上面及び下面のうちのいずれか一方の面が、前記中空体の第１壁における第１下壁形成部および第１上壁形成部のうちのいずれか一方の上に接触するように配置した後、前記中空体を第１壁の内壁形成部および第２壁の外壁形成部の部分でＵ字状に曲げることによって、第１下壁形成部および第１上壁形成部のうちのいずれか他方を前記パワーモジュールの上面及び下面のうちの他方の面に接触させると共に、上下両冷却部および連結部を備えたＵ字状冷却器を形成し、入口ヘッダおよび出口ヘッダを形成する工程と、を含むことを特徴とする半導体装置の製造方法。
[6] A method of manufacturing the semiconductor device according to
Preparing a power module;
A first lower wall forming portion that forms the lower wall of the upper cooling portion, a first upper wall forming portion that forms the upper wall of the lower cooling portion, and the first lower wall forming portion and the first upper wall forming portion are integrated. An inner wall forming portion that connects and forms an inner wall of the connecting portion, a first inlet header wall forming portion that forms one of the upper wall and the lower wall of the inlet header, and an upper wall and a lower wall of the outlet header A first outlet header wall forming portion that forms one wall facing the one wall of the inlet header, and the first lower wall forming portion and the first upper wall forming portion are in the same plane. A first wall that is positioned, a second upper wall forming part that forms the upper wall of the upper cooling part, a second lower wall forming part that forms the lower wall of the lower cooling part, the second upper wall forming part and the An outer wall forming portion integrally connecting the second lower wall forming portion and forming an outer wall of the connecting portion; an upper wall of the inlet header; A second wall having a second inlet header wall forming portion that forms the other of the walls, and a second outlet header wall forming portion that forms the other of the upper and lower walls of the outlet header; Both side edges of the first lower wall forming part of one wall and both side edges of the second upper wall forming part of the second wall, both side edges of the first upper wall forming part of the first wall and the second wall Both side edges of the second lower wall forming part, both side edges of the inner wall forming part of the first wall and both side edges of the outer wall forming part of the second wall, first inlet header wall forming part of the first wall Of the second inlet header wall forming portion of the second wall, and the peripheral portion of the first outlet header wall forming portion of the first wall and the second outlet header wall forming portion of the second wall. The peripheral edge portion is connected to each other, and the side wall of the upper cooling portion, the side wall of the lower cooling portion, the side wall of the connecting portion, the peripheral wall of the inlet header, and the peripheral wall of the outlet header are formed. Preparing a hollow body with a third wall, and,
Either one of the upper surface and the lower surface of the power module is in contact with one of the first lower wall forming portion and the first upper wall forming portion of the first wall of the hollow body. The first lower wall forming portion and the first upper wall forming portion by bending the hollow body into a U shape at the inner wall forming portion of the first wall and the outer wall forming portion of the second wall. Any one of the upper and lower surfaces of the power module is brought into contact with the other surface of the power module, and a U-shaped cooler including both upper and lower cooling portions and a connecting portion is formed. And forming the semiconductor device.
［７］前記中空体の第１壁に、１つの第１入口ヘッダ壁形成部と、１つの第１出口ヘッダ壁形成部と、第１入口ヘッダ壁形成部および第１出口ヘッダ壁形成部の長手方向に間隔をおいて配置された複数の第１下壁形成部と、第１入口ヘッダ壁形成部および第１出口ヘッダ壁形成部の長手方向に間隔をおいて配置された複数の第１上壁形成部と、第１入口ヘッダ壁形成部および第１出口ヘッダ壁形成部の長手方向に間隔をおいて配置された複数の内壁形成部とが設けられ、
前記中空体の第２壁に、１つの第２入口ヘッダ壁形成部と、１つの第２出口ヘッダ壁形成部と、第２入口ヘッダ壁形成部および第２出口ヘッダ壁形成部の長手方向に間隔をおいて配置された複数の第２上壁形成部と、第２入口ヘッダ壁形成部および第２出口ヘッダ壁形成部の長手方向に間隔をおいて配置された複数の第２下壁形成部と、第２入口ヘッダ壁形成部および第２出口ヘッダ壁形成部の長手方向に間隔をおいて配置された複数の外壁形成部とが設けられ、
前記中空体の第３壁が、第１壁の各第１下壁形成部の両側縁部と第２壁の各第２上壁形成部の両側縁部、第１壁の各第１上壁形成部の両側縁部と第２壁の各第２下壁形成部の両側縁部、第１壁の各内壁形成部の両側縁部と第２壁の各外壁形成部の両側縁部、第１壁の第１入口ヘッダ壁形成部の周縁部と第２壁の第２入口ヘッダ壁形成部の周縁部、および第１壁の第１出口ヘッダ壁形成部の周縁部と第２壁の第２出口ヘッダ壁形成部の周縁部とをそれぞれ連結している前項６に記載の半導体装置の製造方法。
[7] The first wall of the hollow body includes a first inlet header wall forming portion, a first outlet header wall forming portion, a first inlet header wall forming portion, and a first outlet header wall forming portion. A plurality of first lower wall forming portions arranged at intervals in the longitudinal direction and a plurality of first lower walls arranged at intervals in the longitudinal direction of the first inlet header wall forming portion and the first outlet header wall forming portion. An upper wall forming portion and a plurality of inner wall forming portions arranged at intervals in the longitudinal direction of the first inlet header wall forming portion and the first outlet header wall forming portion;
In the second wall of the hollow body, in the longitudinal direction of one second inlet header wall forming part, one second outlet header wall forming part, the second inlet header wall forming part and the second outlet header wall forming part A plurality of second upper wall forming portions arranged at intervals, and a plurality of second lower wall formations arranged at intervals in the longitudinal direction of the second inlet header wall forming portion and the second outlet header wall forming portion And a plurality of outer wall forming portions arranged at intervals in the longitudinal direction of the second inlet header wall forming portion and the second outlet header wall forming portion,
The third wall of the hollow body includes both side edges of each first lower wall forming part of the first wall, both side edges of each second upper wall forming part of the second wall, and each first upper wall of the first wall. Both side edges of the forming part and both side edges of each second lower wall forming part of the second wall, both side edges of each inner wall forming part of the first wall and both side edges of each outer wall forming part of the second wall, The peripheral edge of the first inlet header wall forming part of the one wall and the peripheral part of the second inlet header wall forming part of the second wall, and the peripheral part of the first outlet header wall forming part of the first wall and the second of the second wall. 7. The method for manufacturing a semiconductor device according to
［８］前記中空体の第１壁の第１出口ヘッダ壁形成部および第２壁の第２出口ヘッダ壁形成部に、出口ヘッダのずれ部分を形成するずれ形成部が設けられ、前記中空体の第１壁の第１入口ヘッダ壁形成部および第２壁の第２入口ヘッダ壁形成部のうちのいずれか一方に冷却液入口が形成されると共に、当該入口ヘッダ壁形成部に冷却液入口に通じる入口部材が接合され、
前記中空体の第１壁の第１出口ヘッダ壁形成部および第２壁の第２出口ヘッダ壁形成部のうち前記冷却液入口が形成された入口ヘッダ壁形成部とは上下方向の反対側に位置する出口ヘッダ壁形成部のずれ形成部に冷却液出口が形成されると共に、当該ヘッダ壁形成部に冷却液出口に通じる出口部材が接合されている前項６または７に記載の半導体装置の製造方法。
[8] A first outlet header wall forming portion of the first wall of the hollow body and a second outlet header wall forming portion of the second wall are provided with a shift forming portion for forming a shift portion of the outlet header, and the hollow body A coolant inlet is formed in one of the first inlet header wall forming portion of the first wall and the second inlet header wall forming portion of the second wall, and the coolant inlet is formed in the inlet header wall forming portion. The inlet member leading to
Of the first outlet header wall forming portion of the first wall of the hollow body and the second outlet header wall forming portion of the second wall, the inlet header wall forming portion where the coolant inlet is formed is opposite to the vertical direction. 8. Manufacturing of a semiconductor device according to
［９］前記中空体の第２壁の外壁形成部に、外方に膨出しかつ前記第２上壁形成部の幅方向に延びる外方膨出部が設けられている前項５〜８のいずれか１項に記載の半導体装置の製造方法。
[9] Any one of the preceding
［１０］前記中空体の第１壁の内壁形成部に、内方に膨出しかつ前記第１下壁形成部の幅方向に延びる内方膨出部が設けられている前項９に記載の半導体装置の製造方法。 [10] The semiconductor according to [9], wherein the inner wall forming portion of the first wall of the hollow body is provided with an inward bulging portion extending inward and extending in the width direction of the first lower wall forming portion. Device manufacturing method.
［１１］前記中空体の第１壁が全体に平坦であり、前記中空体の第３壁が第２壁と一体に形成されると共に、前記第３壁の先端が前記第１壁に接合されている前項５〜１０のいずれか１項に記載の半導体装置の製造方法。
[11] The first wall of the hollow body is flat overall, the third wall of the hollow body is formed integrally with the second wall, and the tip of the third wall is joined to the first wall. 11. The method for manufacturing a semiconductor device according to any one of
［１］の発明では、冷却器がＵ字状であり、冷却器において、上冷却部の下壁と下冷却部の上壁と連結部の内壁とが、１枚の金属板により一体に形成されると共に、上冷却部の上壁と下冷却部の下壁と連結部の外壁とが、１枚の金属板により一体に形成されているので、上冷却部と下冷却部とを両者の冷却液通路が通じるように接続する作業を行う必要が無くなり、これにより冷却液の漏れを比較的簡単に抑制することができて、生産性を向上できる。また、パワーモジュールを上下両側から冷却することが可能になり、パワーモジュールの冷却効率を向上できる。 In the invention of [1], the cooler is U-shaped, and in the cooler, the lower wall of the upper cooling part, the upper wall of the lower cooling part, and the inner wall of the connecting part are integrally formed by a single metal plate. In addition, since the upper wall of the upper cooling part, the lower wall of the lower cooling part, and the outer wall of the connecting part are integrally formed of a single metal plate, the upper cooling part and the lower cooling part are It is not necessary to perform an operation for connecting the coolant passage so that leakage of the coolant can be suppressed relatively easily, and productivity can be improved. Further, the power module can be cooled from both the upper and lower sides, and the cooling efficiency of the power module can be improved.
［２］の発明では、入口ヘッダの長手方向の一端部に上下方向のいずれか一方に開口した冷却液入口が形成され、出口ヘッダの長手方向における冷却液入口と同じ側の端部に、平面から見て入口ヘッダの冷却液入口が形成された部分からずれたずれ部分が設けられるとともに、このずれ部分に、上下方向のうち冷却液入口と同方向に開口した冷却液出口が形成され、入口ヘッダ内に冷却液を供給する入口部材が冷却液入口と通じるように入口ヘッダに接合され、出口ヘッダ内から冷却液を排出する出口部材が冷却液出口と通じるように出口ヘッダに接合されているので、入口部材および出口部材への配管の接続作業を同じ側で行うことができ、作業性を向上させることができて、生産性をより向上できる。また、配管の取り回しが容易になる利点もある。 In the invention of [2], a coolant inlet opening in one of the vertical directions is formed at one end in the longitudinal direction of the inlet header, and a plane is formed at the end on the same side as the coolant inlet in the longitudinal direction of the outlet header. A shift portion that is shifted from a portion where the coolant inlet of the inlet header is formed as viewed from the top is provided, and a coolant outlet that is open in the same direction as the coolant inlet in the vertical direction is formed at the shift portion. An inlet member for supplying the coolant into the header is joined to the inlet header so as to communicate with the coolant inlet, and an outlet member for discharging the coolant from the outlet header is joined to the outlet header so as to communicate with the coolant outlet. Therefore, the pipe connection work to the inlet member and the outlet member can be performed on the same side, workability can be improved, and productivity can be further improved. There is also an advantage that the piping can be easily handled.
［３］の発明では、１つのパワーモジュールを複数の冷却器で冷却するようにした場合、各冷却器を比較的小型化することが可能になるので、各冷却器の上下の冷却部の側壁の働きによって、上下両冷却部の上下両壁のうち少なくともいずれか一方の変形を効果的に防止することができる。従って、冷却液通路の通路断面積の減少を抑制することができる。即ち、１つのパワーモジュールを１つの冷却器で冷却する場合には、冷却器が比較的大型化するので、上下両壁のうち少なくともいずれか一方が変形しやすくなり、冷却液通路の通路断面積が減少するのであるが、この［３］の発明では、上述したとおり、冷却液通路の通路断面積の減少を抑制できる。更に、隣り合う冷却器間に形成される開口（隙間空間）を利用して、パワーモジュールへの配線を行うことが可能になるし、上下両冷却部間に配置されるパワーモジュールを上下両冷却部を介して締め付けるボルトを通すことが可能になる。 In the invention of [3], when one power module is cooled by a plurality of coolers, each cooler can be relatively reduced in size, so that the side walls of the cooling units above and below each cooler Due to the function, it is possible to effectively prevent deformation of at least one of the upper and lower walls of the upper and lower cooling parts. Accordingly, it is possible to suppress a decrease in the passage cross-sectional area of the coolant passage. That is, when one power module is cooled by one cooler, the cooler becomes relatively large, so that at least one of the upper and lower walls is easily deformed, and the cross-sectional area of the coolant passage However, in the invention of [3], as described above, it is possible to suppress a reduction in the passage sectional area of the coolant passage. Furthermore, it is possible to perform wiring to the power module by utilizing an opening (gap space) formed between adjacent coolers, and the power module disposed between the upper and lower cooling units can be cooled both vertically. It is possible to pass a bolt to be tightened through the portion.
［４］の発明では、パワーモジュールから発せられる熱を、効率良く上下両冷却部の冷却液通路内を流れる冷却液に放熱することができる。 In the invention of [4], heat generated from the power module can be efficiently radiated to the coolant flowing in the coolant passages of the upper and lower cooling units.
［５］の発明（製造方法）によれば、上記［１］の発明の半導体装置を比較的簡単に製造することができる。更に、例えば、中空体の第３壁を、第１壁および第２壁のいずれか一方に一体に形成しておき、第３壁の先端を第１壁および第２壁のいずれか他方に接合しておけば、冷却液の漏れに繋がる接合部の存在を極力減らすことができる。 According to the invention (manufacturing method) of [5], the semiconductor device of the invention of [1] can be manufactured relatively easily. Further, for example, the third wall of the hollow body is formed integrally with either the first wall or the second wall, and the tip of the third wall is joined to either the first wall or the second wall. If so, it is possible to reduce as much as possible the existence of joints that lead to leakage of the coolant.
［６］の発明によれば、上記［２］の発明の半導体装置を比較的簡単に製造することができる。更に、例えば、中空体の第３壁を、第１壁および第２壁のいずれか一方の一体に形成しておき、第３壁の先端を第１壁および第２壁のいずれか他方に接合しておけば、冷却液の漏れに繋がる接合部の存在を極力減らすことができる。 According to the invention [6], the semiconductor device of the invention [2] can be manufactured relatively easily. Further, for example, the third wall of the hollow body is formed integrally with either the first wall or the second wall, and the tip of the third wall is joined to either the first wall or the second wall. If so, it is possible to reduce as much as possible the existence of joints that lead to leakage of the coolant.
［７］の発明によれば、上記［３］の発明の半導体装置を比較的簡単に製造することができる。更に、半導体装置の製造時に、第１壁の第１下壁形成部および第１上壁形成部のうちの少なくともいずれか一方と、第２壁の第２上壁形成部および第２下壁形成部のうちの少なくともいずれか一方の変形が、第３壁の働きによって効果的に防止される。従って、製造された半導体装置の上冷却部および下冷却部において冷却液通路の通路断面積の減少を十分に抑制できる。 According to the invention [7], the semiconductor device according to the invention [3] can be manufactured relatively easily. Further, at the time of manufacturing the semiconductor device, at least one of the first lower wall forming portion and the first upper wall forming portion of the first wall, and the second upper wall forming portion and the second lower wall forming of the second wall are formed. Deformation of at least one of the parts is effectively prevented by the action of the third wall. Accordingly, it is possible to sufficiently suppress the reduction in the cross-sectional area of the coolant passage in the upper cooling portion and the lower cooling portion of the manufactured semiconductor device.
［８］の発明によれば、上記［２］の発明の半導体装置をより簡単に製造することができる。 According to the invention [8], the semiconductor device according to the invention [2] can be manufactured more easily.
［９］の発明によれば、中空体を第１壁の内壁形成部および第２壁の外壁形成部の部分でＵ字状に曲げる際の加工を容易に行うことができる。 According to the invention of [9], it is possible to easily perform processing when the hollow body is bent into a U shape at the inner wall forming portion of the first wall and the outer wall forming portion of the second wall.
［１０］の発明によれば、中空体を第１壁の内壁形成部および第２壁の外壁形成部の部分でＵ字状に曲げる際の加工をより容易に行うことができる。 According to the invention of [10], it is possible to more easily perform processing when the hollow body is bent into a U shape at the inner wall forming portion of the first wall and the outer wall forming portion of the second wall.
［１１］の発明によれば、例えば、中空体の第３壁が第１壁にろう材により接合されている場合、ろう付部が、後工程の曲げの内側に位置するので、ろう付部が後工程の曲げの外側に位置する場合と比べて、ろう付部の変形量が少なくなり、ろう付部の破壊が抑制され得て、冷却液漏れ防止の信頼性が向上する。 According to the invention of [11], for example, when the third wall of the hollow body is joined to the first wall by the brazing material, the brazing portion is located inside the bending in the subsequent process. Compared with the case where the position is located outside the bend in the subsequent process, the amount of deformation of the brazing part is reduced, the breakage of the brazing part can be suppressed, and the reliability of preventing coolant leakage is improved.
以下、本発明の実施形態を、図面を参照しつつ説明する。なお、本明細書において、「アルミニウム」の語は、アルミニウム及びその合金を含む意味で用いている。また、以下の説明において、図２の左右を「左右」というものとし、図１に矢印Ｘで示す方向（図３の右側）を「前」、これと反対側を「後」というものとする。 Embodiments of the present invention will be described below with reference to the drawings. In this specification, the term “aluminum” is used to include aluminum and its alloys. In the following description, the left and right in FIG. 2 are referred to as “left and right”, the direction indicated by the arrow X in FIG. 1 (the right side in FIG. 3) is referred to as “front”, and the opposite side is referred to as “rear”. .
図１および図２は半導体装置の全体構成を示し、図３および図４は半導体装置の要部の構成を示す。また、図５〜図９は半導体装置の製造方法を説明するための図であって、いずれも、Ｕ字状に曲げる操作を行う前の状態を示す図である。 1 and 2 show the overall configuration of the semiconductor device, and FIGS. 3 and 4 show the configuration of the main part of the semiconductor device. 5 to 9 are diagrams for explaining a method of manufacturing a semiconductor device, and all show a state before an operation of bending into a U-shape.
図１〜図４において、半導体装置(1)は、少なくとも１つの発熱型半導体を有するパワーモジュール(2)と、前後方向に間隔をおいて配置され、かつパワーモジュール(2)を上下から冷却する複数のアルミニウム製Ｕ字状冷却器(3)とからなる。 1 to 4, a semiconductor device (1) is arranged with a power module (2) having at least one heat-generating semiconductor and spaced in the front-rear direction, and cools the power module (2) from above and below. It consists of a plurality of aluminum U-shaped coolers (3).
各冷却器(3)は、上下両壁(5)(6)および側壁(7)を有するとともに内部に左右方向に延びる冷却液通路(8)を有し、かつ下壁(6)がパワーモジュール(2)の上面に熱的に接触する上冷却部(4)、上下両壁(11)(12)および側壁(13)を有するとともに内部に左右方向に延びる冷却液通路(14)を有し、かつ上壁(11)がパワーモジュール(2)の下面に熱的に接触する下冷却部(10)、ならびに内外両壁(16)(17)および側壁(18)を有するとともに内部に上下両冷却部(4)(10)の冷却液通路(8)(14)同士を左端部において通じさせる連通路(19)を有し、かつ上下両冷却部(4)(10)を連結する連結部(15)を備えている。 Each cooler (3) has upper and lower walls (5) (6) and a side wall (7), and has a coolant passage (8) extending in the left-right direction inside, and the lower wall (6) is a power module. It has an upper cooling part (4) that is in thermal contact with the upper surface of (2), both upper and lower walls (11), (12) and side walls (13), and has a coolant passage (14) extending in the left-right direction inside. And an upper wall (11) having a lower cooling part (10) in thermal contact with the lower surface of the power module (2), and both inner and outer walls (16) (17) and side walls (18), and upper and lower A connecting portion that connects the cooling fluid passages (8) and (14) of the cooling portions (4) and (10) at the left end portion and that connects the upper and lower cooling portions (4) and (10). (15) is provided.
全冷却器(3)の上下両冷却部(4)(10)のうちのいずれか一方の冷却部、ここでは下冷却部(10)の冷却液通路(14)の右端部は、長手方向を前後方向（下冷却部(10)の冷却液通路(14)での冷却液流れ方向である左右方向、および上下方向と直角をなす方向）に向けた１つの入口ヘッダ(21)に通じさせられ、同じく他方の冷却部、ここでは上冷却部(4)の冷却液通路(8)の右端部は、全冷却器(3)と一体に設けられ、かつ長手方向を入口ヘッダ(21)の長手方向と同一方向である前後方向に向けた１つの出口ヘッダ(22)に通じさせられている。 The cooling part of one of the upper and lower cooling parts (4), (10) of the total cooler (3), here the right end part of the coolant passage (14) of the lower cooling part (10) extends in the longitudinal direction. It is connected to one inlet header (21) in the front-rear direction (the left-right direction that is the coolant flow direction in the coolant passage (14) of the lower cooling section (10) and the direction perpendicular to the up-down direction). Similarly, the right end of the coolant passage (8) of the other cooling section, here the upper cooling section (4), is provided integrally with the entire cooler (3), and the longitudinal direction is the length of the inlet header (21). It leads to one outlet header (22) directed in the front-rear direction which is the same direction as the direction.
入口ヘッダ(21)は、上下両壁(23)(24)および周壁(25)を有しており（図４参照）、入口ヘッダ(21)の下壁(24)における長手方向の一端部(後端部)に下方（上下方向のいずれか一方）に開口した冷却液入口(26)が形成され、入口ヘッダ(21)内に冷却液を供給する管状のアルミニウム製入口部材(27)が、冷却液入口(26)と通じるように入口ヘッダ(21)の下壁(24)にろう材により接合されている（図１、２参照）。なお、以下では、ろう材による接合をろう付と称する。 The inlet header (21) has upper and lower walls (23), (24) and a peripheral wall (25) (see FIG. 4), and one end portion in the longitudinal direction of the lower wall (24) of the inlet header (21) ( A cooling liquid inlet (26) that opens downward (either in the vertical direction) is formed in the rear end portion, and a tubular aluminum inlet member (27) that supplies the cooling liquid into the inlet header (21), A brazing material is joined to the lower wall (24) of the inlet header (21) so as to communicate with the coolant inlet (26) (see FIGS. 1 and 2). Hereinafter, the joining with the brazing material is referred to as brazing.
また、出口ヘッダ(22)は、上下両壁(28)(29)および周壁(31)を有しており（図４参照）、出口ヘッダ(22)の長手方向における冷却液入口(26)と同一側の端部（後端部）に、平面から見て入口ヘッダ(21)の冷却液入口(26)が形成された部分からずれたずれ部分(32)が設けられている（図１参照）。出口ヘッダ(22)の下壁(29)におけるずれ部分(32)に存在する部分に、下方（上下方向のうち冷却液入口(26)と同じ方向）に開口した冷却液出口(33)が形成され、出口ヘッダ(22)内から冷却液を排出する管状のアルミニウム製出口部材(34)が、冷却液出口(33)と通じるように出口ヘッダ(22)の下壁(29)にろう付されている（図１、２参照）。 The outlet header (22) has upper and lower walls (28), (29) and a peripheral wall (31) (see FIG. 4), and a coolant inlet (26) in the longitudinal direction of the outlet header (22) A shift portion (32) deviated from a portion where the coolant inlet (26) of the inlet header (21) is formed as viewed from above is provided at the end (rear end) on the same side (see FIG. 1). ). A coolant outlet (33) that opens downward (in the same direction as the coolant inlet (26) in the up-down direction) is formed in the part of the lower part (32) of the lower wall (29) of the outlet header (22). A tubular aluminum outlet member (34) for discharging the coolant from the outlet header (22) is brazed to the lower wall (29) of the outlet header (22) so as to communicate with the coolant outlet (33). (See FIGS. 1 and 2).
ここで、全冷却器(3)における上冷却部(4)の下壁(6)、下冷却部(10)の上壁(11)、連結部(15)の内壁(16)、入口ヘッダ(21)の上壁(23)、および出口ヘッダ(22)の下壁(29)が、１枚の金属板により一体に形成され（図４参照）、同様に上冷却部(4)の上壁(5)と側壁(7)、下冷却部(10)の下壁(12)と側壁(13)、連結部(15)の外壁(17)と側壁(18)、入口ヘッダ(21)の下壁(24)と周壁(25)、および出口ヘッダ(22)の上壁(28)と周壁(31)が、１枚の金属板により一体に形成されている（図３、４参照）。 Here, in the entire cooler (3), the lower wall (6) of the upper cooling part (4), the upper wall (11) of the lower cooling part (10), the inner wall (16) of the connecting part (15), the inlet header ( 21) The upper wall (23) and the lower wall (29) of the outlet header (22) are integrally formed of a single metal plate (see FIG. 4), and similarly the upper wall of the upper cooling section (4). (5) and side wall (7), lower wall (12) and side wall (13) of lower cooling part (10), outer wall (17) and side wall (18) of connecting part (15), under inlet header (21) The wall (24) and the peripheral wall (25), and the upper wall (28) and the peripheral wall (31) of the outlet header (22) are integrally formed by a single metal plate (see FIGS. 3 and 4).
全冷却器(3)の上下両冷却部(4)(10)の冷却液通路(8)(14)内に、パワーモジュール(2)から発せられる熱を受けて冷却液通路(8)(14)内を流れる冷却液に放熱する放熱具(35)が設けられている（図３、４参照）。放熱具(35)は、上下両冷却部(4)(10)の上壁(5)(11)および下壁(6)(12)から離隔した水平状の基板(36)と、基板(36)に貫通状に固定されて基板(35)の上下両方に突出したアルミニウム製ピン状フィン(37)とからなる。ピン状フィン(37)の上端は上壁(5)(11)にろう付されると共に、ピン状フィン(37)の下端は下壁(6)(12)にろう付されている（図３、４参照）。 The coolant passages (8) (14) receive heat generated from the power module (2) in the coolant passages (8) (14) of the upper and lower cooling sections (4), (10) of the total cooler (3). ) Is provided with a radiator (35) that radiates heat to the coolant flowing in the interior (see FIGS. 3 and 4). The radiator (35) includes a horizontal substrate (36) separated from the upper walls (5) (11) and lower walls (6) (12) of the upper and lower cooling units (4) (10), and a substrate (36 ), And is made of aluminum pin-like fins (37) protruding both above and below the substrate (35). The upper ends of the pin-shaped fins (37) are brazed to the upper walls (5) and (11), and the lower ends of the pin-shaped fins (37) are brazed to the lower walls (6) and (12) (FIG. 3). 4).
上述した半導体装置(1)において、入口部材(27)を通して入口ヘッダ(21)内に流入した冷却液は、下冷却部(10)の冷却液通路(14)内に入り、冷却液通路(14)内を左方に流れた後に連結部(15)の連通路(19)を通って上冷却部(4)の冷却液通路(8)内に入り、ついで冷却液通路(8)内を右方に流れて出口ヘッダ(22)内に入った後、出口部材(34)を通って排出される（図１、４参照）。 In the semiconductor device (1) described above, the coolant that has flowed into the inlet header (21) through the inlet member (27) enters the coolant passage (14) of the lower cooling section (10), and the coolant passage (14 ) Flows to the left and then enters the coolant passage (8) of the upper cooling portion (4) through the communication passage (19) of the connecting portion (15), and then passes to the right in the coolant passage (8). After flowing into the outlet header (22), it is discharged through the outlet member (34) (see FIGS. 1 and 4).
パワーモジュール(2)から発せられる熱は、下冷却部(10)の上壁(11)に伝わった後に放熱具(35)のピン状フィン(37)に伝わり、ピン状フィン(37)および基板(36)を経て下冷却部(10)の冷却液通路(14)内を流れる冷却液に放熱される。これと同時に、パワーモジュール(2)から発せられる熱は、上冷却部(4)の下壁(6)に伝わった後に放熱具(35)のピン状フィン(37)に伝わり、ピン状フィン(37)および基板(36)を経て上冷却部(4)の冷却液通路(8)内を流れる冷却液に放熱される。こうしてパワーモジュール(2)が冷却される。 The heat generated from the power module (2) is transmitted to the upper wall (11) of the lower cooling section (10) and then to the pin-shaped fins (37) of the radiator (35), and the pin-shaped fins (37) and the substrate Heat is radiated to the coolant flowing through the coolant passage (14) of the lower cooling section (10) via (36). At the same time, the heat generated from the power module (2) is transmitted to the lower wall (6) of the upper cooling section (4) and then to the pin-shaped fins (37) of the radiator (35). The heat is radiated to the coolant flowing through the coolant passage (8) of the upper cooling section (4) through the substrate (37) and the substrate (36). Thus, the power module (2) is cooled.
次に、前記半導体装置(1)の製造方法について、図５〜図８を参照しつつ説明する。 Next, a method for manufacturing the semiconductor device (1) will be described with reference to FIGS.
まず、パワーモジュール(2)を準備し、全冷却器(3)を一括して形成する中空体(40)を用意する（図５参照）。 First, a power module (2) is prepared, and a hollow body (40) for forming all the coolers (3) at once is prepared (see FIG. 5).
中空体(40)は、アルミニウム製の第１構成部材(41)と、アルミニウム製の第２構成部材(42)とで形成されており、第１壁(43)、第２壁(44)および第３壁(45)を有している（図５〜７参照）。 The hollow body (40) is formed of a first component member (41) made of aluminum and a second component member (42) made of aluminum, and includes a first wall (43), a second wall (44), and It has a 3rd wall (45) (refer FIGS. 5-7).
第１壁(43)は、図６に示すように、一定の長さおよび幅を有し、かつ入口ヘッダ(21)の上壁(23)および下壁(24)のうちいずれか一方の壁、ここでは上壁(23)を形成する１つの第１入口ヘッダ壁形成部(46)と、一定の長さおよび幅を有するとともに長手方向を第１入口ヘッダ壁形成部(46)と同一方向に向けて設けられ、かつ出口ヘッダ(22)の上壁(28)および下壁(29)のうち入口ヘッダ(21)の上壁(23)と対向する一方の壁、ここでは下壁(29)を形成する１つの第１出口ヘッダ壁形成部(47)と、第１出口ヘッダ壁形成部(47)の長手方向に間隔をおいて設けられ、かつ全冷却器(3)の上冷却部(4)の下壁(6)を形成する複数の第１下壁形成部(48)と、第１入口ヘッダ壁形成部(46)の長手方向に間隔をおいて設けられ、かつ全冷却器(3)の下冷却部(10)の上壁(11)を形成する複数の第１上壁形成部(49)と、第１下壁形成部(48)と第１上壁形成部(49)を一体に連結するとともに全冷却器(3)の連結部(15)の内壁(16)を形成する複数の内壁形成部(51)と、を有する。 As shown in FIG. 6, the first wall (43) has a certain length and width, and one of the upper wall (23) and the lower wall (24) of the inlet header (21). Here, one first inlet header wall forming part (46) forming the upper wall (23), and having a certain length and width and the same longitudinal direction as the first inlet header wall forming part (46) Of the upper wall (28) and the lower wall (29) of the outlet header (22) facing the upper wall (23) of the inlet header (21), here the lower wall (29 ) Forming a first outlet header wall forming portion (47), and an upper cooling portion provided in the longitudinal direction of the first outlet header wall forming portion (47) and spaced apart in the longitudinal direction. (4) The plurality of first lower wall forming portions (48) forming the lower wall (6) and the first inlet header wall forming portion (46) are provided at intervals in the longitudinal direction and are fully cooled. (3) A plurality of first upper walls forming the upper wall (11) of the lower cooling section (10) The forming part (49), the first lower wall forming part (48) and the first upper wall forming part (49) are integrally connected and the inner wall (16) of the connecting part (15) of the whole cooler (3) is connected. A plurality of inner wall forming portions (51) to be formed.
第２壁(44)は、図７に示すように、一定の長さおよび幅を有し、かつ入口ヘッダ(21)の上壁(23)および下壁(24)のうちいずれか他方の壁、ここでは下壁(24)を形成する１つの第２入口ヘッダ壁形成部(52)と、一定の長さおよび幅を有するとともに長手方向を第２入口ヘッダ壁形成部(52)の長手方向と同一方向に向けて設けられ、かつ出口ヘッダ(22)の上壁(28)および下壁(29)のうち他方の壁、ここでは上壁(28)を形成する１つの第２出口ヘッダ壁形成部(53)と、第２出口ヘッダ壁形成部(53)の長手方向に間隔をおいて設けられ、かつ全冷却器(3)の上冷却部(4)の上壁(5)を形成する複数の第２上壁形成部(54)と、第２入口ヘッダ壁形成部(52)の長手方向に間隔をおいて設けられ、かつ全冷却器(3)の下冷却部(10)の下壁(12)を形成する複数の第２下壁形成部(55)と、第２上壁形成部(54)と第２下壁形成部(55)を一体に連結するとともに全冷却器(3)の連結部(15)の外壁(17)を形成する複数の外壁形成部(56)と、を有する。 As shown in FIG. 7, the second wall (44) has a certain length and width, and is either the upper wall (23) or the lower wall (24) of the inlet header (21). Here, one second inlet header wall forming portion (52) forming the lower wall (24), and having a certain length and width, the longitudinal direction is the longitudinal direction of the second inlet header wall forming portion (52). And a second outlet header wall which is provided in the same direction as the upper wall (28) and the lower wall (29) of the outlet header (22) and forms the other wall, here the upper wall (28) Formed in the longitudinal direction of the forming part (53) and the second outlet header wall forming part (53), and forms the upper wall (5) of the upper cooling part (4) of the entire cooler (3) A plurality of second upper wall forming portions (54) and a second inlet header wall forming portion (52) spaced apart in the longitudinal direction and of the lower cooling portion (10) of the entire cooler (3) A plurality of second lower wall forming portions (55) forming the lower wall (12), and a second upper wall A plurality of outer wall forming portions (56) for integrally connecting the forming portion (54) and the second lower wall forming portion (55) and forming the outer wall (17) of the connecting portion (15) of the total cooler (3); Have.
第３壁(45)は、第１壁(43)の第１入口ヘッダ壁形成部(46)の周縁部と第２壁(44)の第２入口ヘッダ壁形成部(52)の周縁部、第１壁(43)の第１出口ヘッダ壁形成部(47)の周縁部と第２壁(44)の第２出口ヘッダ壁形成部(53)の周縁部、第１壁(43)の各第１下壁形成部(48)の両側縁部と第２壁(44)の各第２上壁形成部(54)の両側縁部、第１壁(43)の各第１上壁形成部(49)の両側縁部と第２壁(44)の各第２下壁形成部(55)の両側縁部、および第１壁(43)の各内壁形成部(51)の両側縁部と第２壁(44)の各外壁形成部(56)の両側縁部とをそれぞれ連結し、かつ上冷却部(4)、下冷却部(10)および連結部(15)の側壁(7)(13)(18)と入口ヘッダ(21)および出口ヘッダ(22)の周壁(25)(31)を形成する（図７参照）。 The third wall (45) includes a peripheral portion of the first inlet header wall forming portion (46) of the first wall (43) and a peripheral portion of the second inlet header wall forming portion (52) of the second wall (44), Each of the peripheral part of the 1st exit header wall formation part (47) of the 1st wall (43), the peripheral part of the 2nd exit header wall formation part (53) of the 2nd wall (44), and each of the 1st wall (43) Both side edges of the first lower wall forming part (48), both side edges of each second upper wall forming part (54) of the second wall (44), and each first upper wall forming part of the first wall (43) Both side edges of (49), both side edges of each second lower wall forming part (55) of the second wall (44), and both side edges of each inner wall forming part (51) of the first wall (43); The outer wall forming part (56) of the second wall (44) is connected to both side edges thereof, and the upper cooling part (4), the lower cooling part (10) and the side wall (7) of the connecting part (15) ( 13) (18) and the peripheral walls (25), (31) of the inlet header (21) and the outlet header (22) are formed (see FIG. 7).
第１壁(43)は、全体が平坦状に一体に形成されており、第１入口ヘッダ壁形成部(46)、第１出口ヘッダ壁形成部(47)、第１下壁形成部(48)、第１上壁形成部(49)および内壁形成部(51)が同一平面内に位置している（図６参照）。第２壁(44)は、全体が一体に形成されており、第２上壁形成部(54)および第２下壁形成部(55)は同一平面内に位置している（図７参照）。また、第２壁(44)の外壁形成部(56)は、外方に膨出し（図７で下方に膨出し）かつ第２上壁形成部(54)の幅方向に平行状に延びる外方膨出部が設けられている。前記外方膨出部は、第２上壁形成部(54)の長手方向と平行な縦断面において略円弧形状である（図７参照）。第３壁(45)は、第２壁(44)と一体に形成されており、第３壁(45)の先端（図７で上端）が、第１壁(43)にろう付されている。なお、第１構成部材(41)は、素板に打ち抜き加工を施すことにより形成され、第２構成部材(42)は、素板にプレス加工を施すことにより形成されている。 The entire first wall (43) is integrally formed in a flat shape, and includes a first inlet header wall forming portion (46), a first outlet header wall forming portion (47), and a first lower wall forming portion (48). ), The first upper wall forming portion (49) and the inner wall forming portion (51) are located in the same plane (see FIG. 6). The entire second wall (44) is integrally formed, and the second upper wall forming portion (54) and the second lower wall forming portion (55) are located in the same plane (see FIG. 7). . Further, the outer wall forming portion (56) of the second wall (44) bulges outward (bulges downward in FIG. 7) and extends outside in parallel with the width direction of the second upper wall forming portion (54). A side bulge is provided. The outward bulging portion has a substantially arc shape in a longitudinal section parallel to the longitudinal direction of the second upper wall forming portion (54) (see FIG. 7). The third wall (45) is formed integrally with the second wall (44), and the tip (the upper end in FIG. 7) of the third wall (45) is brazed to the first wall (43). . The first component member (41) is formed by punching the base plate, and the second component member (42) is formed by pressing the base plate.
中空体(40)の第１構成部材(41)の第１入口ヘッダ壁形成部(46)および第２構成部材(42)の第２入口ヘッダ壁形成部(52)のうちのいずれか一方、ここでは第２構成部材(42)の第２入口ヘッダ壁形成部(52)に冷却液入口(26)が形成されており、冷却液入口(26)に通じるように、第２構成部材(42)の第２入口ヘッダ壁形成部(52)に管状の入口部材(27)が下方突出状にろう付されている（図７参照）。 One of the first inlet header wall forming portion (46) of the first component (41) of the hollow body (40) and the second inlet header wall forming portion (52) of the second component (42); Here, the coolant inlet (26) is formed in the second inlet header wall forming portion (52) of the second component (42), and the second component (42) communicates with the coolant inlet (26). The second inlet header wall forming portion (52) is brazed with a tubular inlet member (27) so as to protrude downward (see FIG. 7).
また、中空体(40)の第１構成部材(41)の第１出口ヘッダ壁形成部(47)および第２構成部材(42)の第２出口ヘッダ壁形成部(53)に、出口ヘッダ(22)のずれ部分(32)を形成するずれ形成部(57)(58)が設けられており（図６、７参照）、第１構成部材(41)の第１出口ヘッダ壁形成部(47)のずれ形成部(57)、および第２構成部材(42)の第２出口ヘッダ壁形成部(53)のずれ形成部(58)のうち冷却液入口(26)が形成された入口ヘッダ壁形成部とは上下方向の反対側に位置するヘッダ壁形成部、ここでは第１構成部材(41)の第１出口ヘッダ壁形成部(47)のずれ形成部(57)に冷却液出口(33)が形成されており（図６参照）、該冷却液出口(33)に通じるように、第１構成部材(41)の第１出口ヘッダ壁形成部(47)のずれ形成部(57)に管状の出口部材(34)が上方突出状にろう付されている（図６参照）。 In addition, the first outlet header wall forming portion (47) of the first component member (41) of the hollow body (40) and the second outlet header wall forming portion (53) of the second component member (42) are connected to the outlet header ( 22 is provided with displacement forming portions (57) and (58) for forming the displacement portion (32) (see FIGS. 6 and 7), and the first outlet header wall forming portion (47) of the first component (41) is provided. ) And the inlet header wall in which the coolant inlet (26) is formed among the offset forming portion (58) of the second outlet header wall forming portion (53) of the second component (42). A coolant wall outlet (33) is formed in the header wall forming portion located on the opposite side of the forming portion in the vertical direction, here, the displacement forming portion (57) of the first outlet header wall forming portion (47) of the first component member (41). ) Is formed (see FIG. 6), and is formed in the displacement forming portion (57) of the first outlet header wall forming portion (47) of the first component member (41) so as to communicate with the coolant outlet (33). A tubular outlet member (34) is brazed so as to protrude upward (see FIG. 6).
更に、第２構成部材(42)の第２上壁形成部(54)または第２下壁形成部(55)の上に放熱具(35)が配置されるとともに、ピン状フィン(37)が第２上壁形成部(54)または第２下壁形成部(55)にろう付されている。 Further, a radiator (35) is disposed on the second upper wall forming portion (54) or the second lower wall forming portion (55) of the second component member (42), and the pin-shaped fin (37) is provided. The second upper wall forming portion (54) or the second lower wall forming portion (55) is brazed.
そして、パワーモジュール(2)をその上下一対の最大面のうちの一方の面（図５で下面）を、中空体(40)の第１壁(43)における全第１下壁形成部(48)および全第１上壁形成部(49)のうちのいずれか一方、ここでは全第１上壁形成部(49)上に熱的に接触するように載置した後（図５参照）、中空体(40)を第１壁(43)の全内壁形成部(51)および第２壁(44)の全外壁形成部(56)の部分でＵ字状に曲げることによって、全第１下壁形成部(48)をパワーモジュール(2)の他方の面（図５で上面）に熱的に接触させ、これにより全冷却器(3)の上下両冷却部(4)(10)、連結部(15)、入口ヘッダ(21)および出口ヘッダ(22)を形成する。こうして、図１に示す半導体装置(1)が製造される。 Then, the power module (2) has one of the upper and lower pair of maximum surfaces (the lower surface in FIG. 5) as the first lower wall forming portion (48 in the first wall (43) of the hollow body (40). ) And the entire first upper wall forming portion (49), here, after being placed in thermal contact with the entire first upper wall forming portion (49) (see FIG. 5), By bending the hollow body (40) into a U-shape at all inner wall forming portions (51) of the first wall (43) and all outer wall forming portions (56) of the second wall (44), The wall forming part (48) is brought into thermal contact with the other surface (the upper surface in FIG. 5) of the power module (2), whereby the upper and lower cooling parts (4) (10) of the total cooler (3) are connected. A portion (15), an inlet header (21) and an outlet header (22) are formed. Thus, the semiconductor device (1) shown in FIG. 1 is manufactured.
図９は、半導体装置の製造に用いられる中空体の変形例を示す。図９に示す中空体(60)では、第１壁(43)の第１下壁形成部(48)と第１上壁形成部(49)を一体に連結するとともに全冷却器(3)の連結部(15)の内壁(16)を形成する複数の内壁形成部(61)は、中空体の内方に膨出し（図９で下方に膨出し）かつ第１下壁形成部(48)の幅方向に平行状に延びる内方膨出部が設けられている。前記内方膨出部は、第１下壁形成部(48)の長手方向と平行な縦断面において略円弧形状である（図９参照）。図９に示す中空体(60)は、その他の構成は、上述した実施形態の中空体(40)と同様である。 FIG. 9 shows a modification of the hollow body used for manufacturing the semiconductor device. In the hollow body (60) shown in FIG. 9, the first lower wall forming portion (48) and the first upper wall forming portion (49) of the first wall (43) are integrally connected and the entire cooler (3) is connected. The plurality of inner wall forming portions (61) forming the inner wall (16) of the connecting portion (15) bulge inward of the hollow body (bulge downward in FIG. 9) and the first lower wall forming portion (48). An inward bulging portion extending in parallel with the width direction is provided. The inward bulging portion has a substantially arc shape in a longitudinal section parallel to the longitudinal direction of the first lower wall forming portion (48) (see FIG. 9). The other configuration of the hollow body (60) shown in FIG. 9 is the same as that of the hollow body (40) of the above-described embodiment.
本発明に係る半導体装置は、電気自動車、ハイブリッド自動車、電車等に搭載される電力変換装置に用いられるパワーモジュールを冷却するのに好適に用いられるが、特にこのような用途に限定されるものではない。 The semiconductor device according to the present invention is suitably used for cooling a power module used in a power conversion device mounted on an electric vehicle, a hybrid vehicle, a train, or the like, but is not particularly limited to such an application. Absent.
(1)：半導体装置
(2)：パワーモジュール
(3)：冷却器
(4)：上冷却部
(5)：上壁
(6)：下壁
(7)：側壁
(8)：冷却液通路
(10)：下冷却部
(11)：上壁
(12)：下壁
(13)：側壁
(14)：冷却液通路
(15)：連結部
(16)：内壁
(17)：外壁
(18)：側壁
(19)：連通路（冷却液通路）
(21)：入口ヘッダ
(22)：出口ヘッダ
(23)：入口ヘッダの上壁
(24)：入口ヘッダの下壁
(25)：入口ヘッダの周壁
(26)：冷却液入口
(27)：入口部材
(28)：出口ヘッダの上壁
(29)：出口ヘッダの下壁
(31)：出口ヘッダの周壁
(32)：ずれ部分
(33)：冷却液出口
(34)：出口部材
(35)：放熱具
(40)(60)：中空体
(43)：第１壁
(44)：第２壁
(45)：第３壁
(46)：第１入口ヘッダ壁形成部
(47)：第１出口ヘッダ壁形成部
(48)：第１下壁形成部
(49)：第１上壁形成部
(51)(61)：内壁形成部
(52)：第２入口ヘッダ壁形成部
(53)：第２出口ヘッダ壁形成部
(54)：第２上壁形成部
(55)：第２下壁形成部
(56)：外壁形成部
(57)：ずれ形成部
(1): Semiconductor device
(2): Power module
(3): Cooler
(4): Upper cooling section
(5): Upper wall
(6): Lower wall
(7): Side wall
(8): Coolant passage
(10): Lower cooling section
(11): Upper wall
(12): Lower wall
(13): Side wall
(14): Coolant passage
(15): Connection part
(16): Inner wall
(17): Exterior wall
(18): Side wall
(19): Communication passage (coolant passage)
(21): Entrance header
(22): Exit header
(23): Upper wall of entrance header
(24): Lower wall of entrance header
(25): Perimeter wall of inlet header
(26): Coolant inlet
(27): Entrance member
(28): Upper wall of outlet header
(29): Bottom wall of outlet header
(31): Outer header peripheral wall
(32): Misalignment
(33): Coolant outlet
(34): Outlet member
(35): Radiator
(40) (60): Hollow body
(43): First wall
(44): Second wall
(45): Third wall
(46): 1st inlet header wall forming part
(47): 1st outlet header wall forming part
(48): First lower wall forming part
(49): First upper wall forming part
(51) (61): Inner wall forming part
(52): Second inlet header wall forming part
(53): Second outlet header wall forming part
(54): Second upper wall forming part
(55): Second lower wall forming part
(56): Outer wall forming part
(57): Deviation formation part
Claims (11)
前記冷却器は、
上下両壁および側壁を有するとともに内部に冷却液通路を有し、かつ下壁が前記パワーモジュールの上面側に接触する上冷却部と、
上下両壁および側壁を有するとともに内部に冷却液通路を有し、かつ上壁が前記パワーモジュールの下面側に接触する下冷却部と、
内外両壁および側壁を有するとともに内部に前記上下両冷却部の冷却液通路同士を通じさせる連通路を有し、かつ前記上下両冷却部を連結する連結部と、を備えてなり、
前記冷却器における上冷却部の下壁と下冷却部の上壁と連結部の内壁とが、１枚の金属板により一体に形成されると共に、前記冷却器における上冷却部の上壁と下冷却部の下壁と連結部の外壁とが、１枚の金属板により一体に形成されていることを特徴とする半導体装置。 A semiconductor device comprising: a power module having at least one exothermic semiconductor; and a U-shaped cooler that cools the power module from above and below,
The cooler is
An upper cooling section having both upper and lower walls and side walls, and having a coolant passage therein, and a lower wall in contact with the upper surface side of the power module;
A lower cooling part having both upper and lower walls and side walls and having a coolant passage therein, and the upper wall contacting the lower surface side of the power module;
The inner and outer walls and side walls, and a communication passage that allows the coolant passages of the upper and lower cooling parts to pass through each other, and a connecting part that connects the upper and lower cooling parts.
The lower wall of the upper cooling part in the cooler, the upper wall of the lower cooling part, and the inner wall of the connecting part are integrally formed by a single metal plate, and the upper wall and the lower wall of the upper cooling part in the cooler are integrally formed. A semiconductor device, wherein a lower wall of a cooling portion and an outer wall of a connecting portion are integrally formed of a single metal plate.
前記入口ヘッダおよび前記出口ヘッダは、それぞれ上下両壁および周壁を有し、前記入口ヘッダの長手方向の一端部に上下方向のいずれか一方に開口した冷却液入口が形成され、前記出口ヘッダの長手方向における前記冷却液入口と同じ側の一端部に、平面視において前記入口ヘッダの冷却液入口が形成された部分からずれたずれ部分が設けられるとともに、前記ずれ部分に、上下方向のうち冷却液入口と同じ方向に開口した冷却液出口が形成され、
前記入口ヘッダ内に冷却液を供給する入口部材が前記冷却液入口と通じるように前記入口ヘッダに接合され、前記出口ヘッダ内から冷却液を排出する出口部材が前記冷却液出口と通じるように前記出口ヘッダに接合されている請求項１に記載の半導体装置。 The end of the cooling liquid passage of the cooling section of either one of the upper and lower cooling sections of the cooler opposite to the connection section is the longitudinal direction of the cooling liquid flow direction in the cooling liquid passage of the cooling section, and It is communicated with the inlet header oriented in a direction perpendicular to the vertical direction, and the end opposite to the connecting portion in the coolant passage of the other cooling portion has its longitudinal direction oriented in the same direction as the inlet header. To the exit header,
The inlet header and the outlet header have both upper and lower walls and a peripheral wall, respectively, and a coolant inlet opening in one of the vertical directions is formed at one end in the longitudinal direction of the inlet header. In the one end portion on the same side as the coolant inlet in the direction, a shift portion shifted from the portion where the coolant inlet of the inlet header is formed in a plan view is provided, and the coolant in the vertical direction is provided in the shift portion A coolant outlet opening in the same direction as the inlet is formed,
An inlet member that supplies a coolant into the inlet header is joined to the inlet header so as to communicate with the coolant inlet, and an outlet member that discharges the coolant from within the outlet header communicates with the coolant outlet. The semiconductor device according to claim 1, wherein the semiconductor device is joined to the outlet header.
全冷却器において、上下両冷却部のうちのいずれか一方の冷却部の冷却液通路における連結部とは反対側の端部が、前記入口ヘッダに通じさせられると共に、他方の冷却部の冷却液通路における連結部とは反対側の端部が、前記出口ヘッダに通じさせられている請求項２に記載の半導体装置。 A plurality of the coolers, the plurality of coolers are arranged at intervals in the longitudinal direction of one inlet header and one outlet header, and provided integrally with the inlet header and the outlet header;
In the entire cooler, an end of the cooling liquid passage of either one of the upper and lower cooling parts opposite to the connecting part is communicated with the inlet header and the cooling liquid of the other cooling part The semiconductor device according to claim 2, wherein an end portion of the passage opposite to the connection portion is communicated with the outlet header.
パワーモジュールを準備する工程と、
上冷却部の下壁を形成する第１下壁形成部、下冷却部の上壁を形成する第１上壁形成部、および第１下壁形成部と第１上壁形成部を一体に連結するとともに連結部の内壁を形成する内壁形成部を有し、かつ第１下壁形成部および第１上壁形成部が同一平面内に位置している第１壁と、上冷却部の上壁を形成する第２上壁形成部、下冷却部の下壁を形成する第２下壁形成部、および第２上壁形成部と第２下壁形成部とを一体に連結するとともに連結部の外壁を形成する外壁形成部を有する第２壁と、第１壁の第１下壁形成部の両側縁部と第２壁の第２上壁形成部の両側縁部、第１壁の第１上壁形成部の両側縁部と第２壁の第２下壁形成部の両側縁部、および第１壁の内壁形成部の両側縁部と第２壁の外壁形成部の両側縁部とをそれぞれ連結し、かつ上冷却部、下冷却部および連結部の側壁を形成する第３壁とを備えた中空体を準備する工程と、
前記パワーモジュールを、その上面及び下面のうちのいずれか一方の面が、前記中空体の第１壁における第１下壁形成部および第１上壁形成部のうちのいずれか一方の上に接触するように配置した後、前記中空体を第１壁の内壁形成部および第２壁の外壁形成部の部分でＵ字状に曲げることによって、該中空体の第１下壁形成部および第１上壁形成部のうちのいずれか他方を前記パワーモジュールの上面及び下面のうちの他方の面に接触させると共に、上下両冷却部および連結部を備えたＵ字状冷却器を形成する工程と、を含むことを特徴とする半導体装置の製造方法。 A method of manufacturing the semiconductor device according to claim 1,
Preparing a power module;
The first lower wall forming part that forms the lower wall of the upper cooling part, the first upper wall forming part that forms the upper wall of the lower cooling part, and the first lower wall forming part and the first upper wall forming part are integrally connected. A first wall having an inner wall forming portion that forms an inner wall of the connecting portion, and wherein the first lower wall forming portion and the first upper wall forming portion are located in the same plane, and the upper wall of the upper cooling portion The second upper wall forming part forming the lower wall, the second lower wall forming part forming the lower wall of the lower cooling part, and the second upper wall forming part and the second lower wall forming part are integrally connected and A second wall having an outer wall forming portion forming an outer wall, both side edges of the first lower wall forming portion of the first wall, both side edges of the second upper wall forming portion of the second wall, and the first of the first wall. Both side edges of the upper wall forming part, both side edges of the second lower wall forming part of the second wall, and both side edges of the inner wall forming part of the first wall and both side edges of the outer wall forming part of the second wall Concatenate each One on the cooling unit, a step of preparing a hollow body and a third wall forming a side wall of the lower cooling portion and connecting portion,
Either one of the upper surface and the lower surface of the power module is in contact with one of the first lower wall forming portion and the first upper wall forming portion of the first wall of the hollow body. The hollow body is bent into a U-shape at the inner wall forming portion of the first wall and the outer wall forming portion of the second wall, thereby forming the first lower wall forming portion and the first of the hollow body. A step of contacting one of the upper wall forming portions with the other of the upper and lower surfaces of the power module, and forming a U-shaped cooler including both upper and lower cooling portions and a connecting portion; A method for manufacturing a semiconductor device, comprising:
パワーモジュールを準備する工程と、
上冷却部の下壁を形成する第１下壁形成部、下冷却部の上壁を形成する第１上壁形成部、前記第１下壁形成部と前記第１上壁形成部を一体に連結するとともに連結部の内壁を形成する内壁形成部、入口ヘッダの上壁および下壁のうちいずれか一方の壁を形成する第１入口ヘッダ壁形成部、ならびに出口ヘッダの上壁および下壁のうち前記入口ヘッダの前記一方の壁と対向する一方の壁を形成する第１出口ヘッダ壁形成部を有し、かつ前記第１下壁形成部および前記第１上壁形成部が同一平面内に位置している第１壁と、上冷却部の上壁を形成する第２上壁形成部、下冷却部の下壁を形成する第２下壁形成部、前記第２上壁形成部と前記第２下壁形成部とを一体に連結するとともに連結部の外壁を形成する外壁形成部、入口ヘッダの上壁および下壁のうち他方の壁を形成する第２入口ヘッダ壁形成部、ならびに出口ヘッダの上壁および下壁のうち他方の壁を形成する第２出口ヘッダ壁形成部を有する第２壁と、前記第１壁の第１下壁形成部の両側縁部と前記第２壁の第２上壁形成部の両側縁部、前記第１壁の第１上壁形成部の両側縁部と前記第２壁の第２下壁形成部の両側縁部、前記第１壁の内壁形成部の両側縁部と前記第２壁の外壁形成部の両側縁部、前記第１壁の第１入口ヘッダ壁形成部の周縁部と前記第２壁の第２入口ヘッダ壁形成部の周縁部、および前記第１壁の第１出口ヘッダ壁形成部の周縁部と前記第２壁の第２出口ヘッダ壁形成部の周縁部とをそれぞれ連結し、かつ上冷却部の側壁、下冷却部の側壁、連結部の側壁、入口ヘッダの周壁および出口ヘッダの周壁を形成する第３壁と、を備えた中空体を準備する工程と、
前記パワーモジュールを、その上面及び下面のうちのいずれか一方の面が、前記中空体の第１壁における第１下壁形成部および第１上壁形成部のうちのいずれか一方の上に接触するように配置した後、前記中空体を第１壁の内壁形成部および第２壁の外壁形成部の部分でＵ字状に曲げることによって、第１下壁形成部および第１上壁形成部のうちのいずれか他方を前記パワーモジュールの上面及び下面のうちの他方の面に接触させると共に、上下両冷却部および連結部を備えたＵ字状冷却器を形成し、入口ヘッダおよび出口ヘッダを形成する工程と、を含むことを特徴とする半導体装置の製造方法。 A method of manufacturing the semiconductor device according to claim 2,
Preparing a power module;
A first lower wall forming portion that forms the lower wall of the upper cooling portion, a first upper wall forming portion that forms the upper wall of the lower cooling portion, and the first lower wall forming portion and the first upper wall forming portion are integrated. An inner wall forming portion that connects and forms an inner wall of the connecting portion, a first inlet header wall forming portion that forms one of the upper wall and the lower wall of the inlet header, and an upper wall and a lower wall of the outlet header A first outlet header wall forming portion that forms one wall facing the one wall of the inlet header, and the first lower wall forming portion and the first upper wall forming portion are in the same plane. A first wall that is positioned, a second upper wall forming part that forms the upper wall of the upper cooling part, a second lower wall forming part that forms the lower wall of the lower cooling part, the second upper wall forming part and the An outer wall forming portion integrally connecting the second lower wall forming portion and forming an outer wall of the connecting portion; an upper wall of the inlet header; A second wall having a second inlet header wall forming portion that forms the other of the walls, and a second outlet header wall forming portion that forms the other of the upper and lower walls of the outlet header; Both side edges of the first lower wall forming part of one wall and both side edges of the second upper wall forming part of the second wall, both side edges of the first upper wall forming part of the first wall and the second wall Both side edges of the second lower wall forming part, both side edges of the inner wall forming part of the first wall and both side edges of the outer wall forming part of the second wall, first inlet header wall forming part of the first wall Of the second inlet header wall forming portion of the second wall, and the peripheral portion of the first outlet header wall forming portion of the first wall and the second outlet header wall forming portion of the second wall. The peripheral edge portion is connected to each other, and the side wall of the upper cooling portion, the side wall of the lower cooling portion, the side wall of the connecting portion, the peripheral wall of the inlet header, and the peripheral wall of the outlet header are formed. Preparing a hollow body with a third wall, and,
Either one of the upper surface and the lower surface of the power module is in contact with one of the first lower wall forming portion and the first upper wall forming portion of the first wall of the hollow body. The first lower wall forming portion and the first upper wall forming portion by bending the hollow body into a U shape at the inner wall forming portion of the first wall and the outer wall forming portion of the second wall. Any one of the upper and lower surfaces of the power module is brought into contact with the other surface of the power module, and a U-shaped cooler including both upper and lower cooling portions and a connecting portion is formed. And forming the semiconductor device.
前記中空体の第２壁に、１つの第２入口ヘッダ壁形成部と、１つの第２出口ヘッダ壁形成部と、第２入口ヘッダ壁形成部および第２出口ヘッダ壁形成部の長手方向に間隔をおいて配置された複数の第２上壁形成部と、第２入口ヘッダ壁形成部および第２出口ヘッダ壁形成部の長手方向に間隔をおいて配置された複数の第２下壁形成部と、第２入口ヘッダ壁形成部および第２出口ヘッダ壁形成部の長手方向に間隔をおいて配置された複数の外壁形成部とが設けられ、
前記中空体の第３壁が、第１壁の各第１下壁形成部の両側縁部と第２壁の各第２上壁形成部の両側縁部、第１壁の各第１上壁形成部の両側縁部と第２壁の各第２下壁形成部の両側縁部、第１壁の各内壁形成部の両側縁部と第２壁の各外壁形成部の両側縁部、第１壁の第１入口ヘッダ壁形成部の周縁部と第２壁の第２入口ヘッダ壁形成部の周縁部、および第１壁の第１出口ヘッダ壁形成部の周縁部と第２壁の第２出口ヘッダ壁形成部の周縁部とをそれぞれ連結している請求項６に記載の半導体装置の製造方法。 In the first wall of the hollow body, in the longitudinal direction of one first inlet header wall forming portion, one first outlet header wall forming portion, the first inlet header wall forming portion and the first outlet header wall forming portion. A plurality of first lower wall forming portions arranged at intervals, and a plurality of first upper wall formations arranged at intervals in the longitudinal direction of the first inlet header wall forming portion and the first outlet header wall forming portion And a plurality of inner wall forming portions arranged at intervals in the longitudinal direction of the first inlet header wall forming portion and the first outlet header wall forming portion,
In the second wall of the hollow body, in the longitudinal direction of one second inlet header wall forming part, one second outlet header wall forming part, the second inlet header wall forming part and the second outlet header wall forming part A plurality of second upper wall forming portions arranged at intervals, and a plurality of second lower wall formations arranged at intervals in the longitudinal direction of the second inlet header wall forming portion and the second outlet header wall forming portion And a plurality of outer wall forming portions arranged at intervals in the longitudinal direction of the second inlet header wall forming portion and the second outlet header wall forming portion,
The third wall of the hollow body includes both side edges of each first lower wall forming part of the first wall, both side edges of each second upper wall forming part of the second wall, and each first upper wall of the first wall. Both side edges of the forming part and both side edges of each second lower wall forming part of the second wall, both side edges of each inner wall forming part of the first wall and both side edges of each outer wall forming part of the second wall, The peripheral edge of the first inlet header wall forming part of the one wall and the peripheral part of the second inlet header wall forming part of the second wall, and the peripheral part of the first outlet header wall forming part of the first wall and the second of the second wall. The method for manufacturing a semiconductor device according to claim 6, wherein the peripheral portions of the two outlet header wall forming portions are connected to each other.
前記中空体の第１壁の第１出口ヘッダ壁形成部および第２壁の第２出口ヘッダ壁形成部のうち前記冷却液入口が形成された入口ヘッダ壁形成部とは上下方向の反対側に位置する出口ヘッダ壁形成部のずれ形成部に冷却液出口が形成されると共に、当該ヘッダ壁形成部に冷却液出口に通じる出口部材が接合されている請求項６または７に記載の半導体装置の製造方法。 The first outlet header wall forming portion of the first wall of the hollow body and the second outlet header wall forming portion of the second wall are provided with a shift forming portion that forms a shift portion of the outlet header, and the first of the hollow body A coolant inlet is formed in one of the first inlet header wall forming portion of the wall and the second inlet header wall forming portion of the second wall, and the inlet leading to the coolant inlet in the inlet header wall forming portion The parts are joined,
Of the first outlet header wall forming portion of the first wall of the hollow body and the second outlet header wall forming portion of the second wall, the inlet header wall forming portion where the coolant inlet is formed is opposite to the vertical direction. 8. The semiconductor device according to claim 6, wherein a coolant outlet is formed at a position where the outlet header wall forming portion is positioned, and an outlet member communicating with the coolant outlet is joined to the header wall forming portion. Production method.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003021445A (en) * | 2001-07-05 | 2003-01-24 | Ts Heatronics Co Ltd | Heat radiating pallet, heat radiating conveyor and transfer device with heat radiating mechanism |
| US20070097627A1 (en) * | 2005-10-28 | 2007-05-03 | Taylor Ralph S | Electronics assembly having multiple side cooling and method |
| JP2016074015A (en) * | 2014-10-08 | 2016-05-12 | カルソニックカンセイ株式会社 | Semiconductor cooler structure |
| US20170336152A1 (en) * | 2016-05-20 | 2017-11-23 | Hyundai Motor Company | Double-sided cooler for cooling both sides of electronic component |
| US20170365890A1 (en) * | 2015-03-10 | 2017-12-21 | Hanon Systems | Heat exchanger for cooling electrical element |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003021445A (en) * | 2001-07-05 | 2003-01-24 | Ts Heatronics Co Ltd | Heat radiating pallet, heat radiating conveyor and transfer device with heat radiating mechanism |
| US20070097627A1 (en) * | 2005-10-28 | 2007-05-03 | Taylor Ralph S | Electronics assembly having multiple side cooling and method |
| JP2016074015A (en) * | 2014-10-08 | 2016-05-12 | カルソニックカンセイ株式会社 | Semiconductor cooler structure |
| US20170365890A1 (en) * | 2015-03-10 | 2017-12-21 | Hanon Systems | Heat exchanger for cooling electrical element |
| US20170336152A1 (en) * | 2016-05-20 | 2017-11-23 | Hyundai Motor Company | Double-sided cooler for cooling both sides of electronic component |
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