JP2019186333A - Ultraviolet light-emitting element, ultraviolet light-emitting device - Google Patents

Abstract

To increase enhancement effect of light extraction efficiency obtained by joining a lens to a semiconductor chip.SOLUTION: An ultraviolet light-emitting element 1 has a semiconductor chip 110 emitting ultraviolet light, an ultraviolet light permeable lens 120, and an ultraviolet light permeable resin layer 130 joining the lens 120 and the semiconductor chip 110. A recess 122 is formed in the incidence plane 121 of the lens 120, and the semiconductor chip 110 is placed in the recess 122 while directing a principal surface 110a, i.e., the main light extraction surface, toward the bottom face 122a of the recess 122. The resin layer 130 exists between the recess 122 and the principal surface 110a and the lateral face 110b of the semiconductor chip.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an ultraviolet light emitting element and an ultraviolet light emitting device.

For the purpose of increasing the light extraction efficiency of the chip-shaped ultraviolet light emitting device, a hemispherical lens is provided on the back surface of the substrate (the surface opposite to the surface on which the light emitting layer is formed), which is the main light extraction surface of the semiconductor chip. Joining has been proposed (see, for example, Patent Documents 1 and 2).
Patent Document 1 describes a method of directly attaching a hemispherical lens to a semiconductor chip (LED die) using, for example, a thin layer of a sealant made of silicone oil and / or silicone resin. In the ultraviolet light emitting element described in Patent Document 1, the plane of the hemispherical lens is larger than the back surface of the substrate of the semiconductor chip, and only this back surface is covered with a thin layer of the sealant.

In Patent Document 2, after mounting a semiconductor chip in a recess of a submount in which a recess is formed by a side wall, an amorphous fluororesin is placed in the recess of the submount to cover the entire surface of the semiconductor chip. On the top is described fixing the peripheral edge of the plane of the hemispherical lens. That is, in the ultraviolet light emitting element of Patent Document 2, the semiconductor chip is arranged outside the hemispherical lens.
Further, Patent Document 2 uses an amorphous fluororesin having a non-reactive terminal functional group that does not exhibit a binding property to a metal constituting a pad electrode of an ultraviolet light emitting element as a sealing resin for the ultraviolet light emitting element. It is described.

JP-T-2017-521872 WO2014 / 178288 pamphlet

The ultraviolet light-emitting elements described in Patent Documents 1 and 2 have room for further improvement in terms of increasing light extraction efficiency obtained by bonding a lens to a semiconductor chip.
An object of the present invention is to increase the effect of increasing the light extraction efficiency obtained by bonding a lens to a semiconductor chip.

To achieve the above object, an ultraviolet light emitting element according to the first aspect of the present invention includes a semiconductor chip that emits ultraviolet light, an ultraviolet transmissive lens, an ultraviolet transmissive resin layer that joins the lens and the semiconductor chip, Have A concave portion is formed on the incident surface of the lens, and the semiconductor chip is disposed in the concave portion with the main surface, which is the main light extraction surface, facing the bottom surface of the concave portion of the lens. The resin layer exists between the concave portion of the lens and the main surface and side surface of the semiconductor chip.
Here, the main light extraction surface is a surface where the amount of light that can be extracted is the largest among the surfaces from which light can be extracted.

  According to the ultraviolet light emitting element of one embodiment of the present invention, the ultraviolet light transmissive resin layer exists not only between the lens and the main surface of the semiconductor chip, but also between the lens and the side surface of the semiconductor chip. Much of the ultraviolet light emitted from the side surface of the semiconductor chip can be put into the lens. Therefore, it can be expected that the effect of increasing the light extraction efficiency obtained by bonding the lens to the semiconductor chip is increased.

It is sectional drawing which shows the ultraviolet-ray light-emitting device provided with the ultraviolet light-emitting element of 1st embodiment. It is the figure which looked at the ultraviolet light emitting element of 1st embodiment from the entrance plane side of a lens, and the AA cross section of this figure is shown by FIG. It is sectional drawing which shows the semiconductor chip which comprises the ultraviolet light emitting element of 1st embodiment. It is a top view which shows the package substrate which comprises the ultraviolet light-emitting device of 1st embodiment, and the AA cross section of this figure is shown by FIG. FIG. 4 is a partially cutaway sectional view showing a state where the semiconductor chip of FIG. 3 is mounted on a package substrate. It is sectional drawing which shows the ultraviolet-ray light-emitting device of 2nd embodiment. It is sectional drawing which shows the ultraviolet light-emitting device of 3rd embodiment. It is sectional drawing which shows the ultraviolet-ray light-emitting device of 4th embodiment. It is a top view which shows the package board | substrate which comprises the ultraviolet light-emitting device of 4th embodiment.

  Hereinafter, although embodiment of this invention is described, this invention is not limited to embodiment shown below. In the embodiment described below, a technically preferable limitation is made for carrying out the present invention, but this limitation is not an essential requirement of the present invention.

[First embodiment]
〔Constitution〕
An ultraviolet light emitting device 10 shown in FIG. 1 includes an ultraviolet light emitting element 1 and a package substrate (base body) 2, and a first connecting body 3 and a second connecting body 4 that electrically connect the ultraviolet light emitting element 1 and the package substrate 2. Have.
As shown in FIGS. 1 and 2, the ultraviolet light emitting element 1 is a semiconductor chip 110 that emits ultraviolet light, a hemispherical lens 120 with a recess made of quartz or sapphire, and an amorphous fluororesin layer or a silicone resin layer. A resin layer 130 is provided.

The concave hemispherical lens 120 has a concave portion 122 formed at the center of a flat surface (incident surface) 121 of the hemispherical lens. In the concave hemispherical lens 120, a portion of the flat surface 121 outside the concave portion 122 exists as a flat peripheral portion 121a.
The bottom surface 122a of the recess 122 is slightly larger than the main surface 110a that is the main light extraction surface of the semiconductor chip 110, and the dimension (depth of the recess 122) in the direction perpendicular to the plane 121 of the side surface 122b of the recess 122 is as follows. Greater than 110 thickness. The semiconductor chip 110 is disposed in the concave portion 122 of the concave hemispherical lens 120 with the main surface 110 a facing the bottom surface 122 a of the concave portion 122.
The resin layer 130 includes a bottom surface portion 131 that exists between the bottom surface 122 a of the recess 122 and the main surface 110 a of the semiconductor chip 110, and a side surface portion 132 that exists between the side surface 122 b of the recess 122 and the side surface 110 b of the semiconductor chip 110. Have

As shown in FIG. 3, the semiconductor chip 110 includes a substrate 111, a semiconductor layer 112, a first electrode 113, and a second electrode 114. The semiconductor chip 110 can emit UVC having a wavelength of 280 nm or less, for example.
The substrate 111 is, for example, an AlN substrate or a sapphire substrate. The semiconductor layer 112 includes an n-type nitride semiconductor layer (first conductivity type nitride semiconductor layer), a nitride semiconductor light emitting layer, and a p-type nitride semiconductor layer (second conductivity type nitride semiconductor layer). Is the body. The n-type nitride semiconductor layer is, for example, an n-AlGaN layer. The nitride semiconductor light emitting layer is a layer having a multiple quantum well structure (MQW) including, for example, a quantum well layer made of AlGaN and an electron barrier layer made of AlN. The p-type nitride semiconductor layer is, for example, a p-GaN layer. The first electrode 113 is formed on the n-type nitride semiconductor layer, and the second electrode 114 is formed on the p-type nitride semiconductor layer.

The main surface 110a of the semiconductor chip 110 is the back surface of the substrate 111 (the surface opposite to the surface 111a on which the semiconductor layer 112 is formed). In the case of a semiconductor chip that does not have the substrate 111, the surface opposite to the surface on which the first electrode 113 and the second electrode 114 of the semiconductor layer 112 are formed is a main surface (main light extraction surface). Become.
As shown in FIGS. 1 and 4, the package substrate 2 includes a main body 21 made of ceramics (for example, aluminum nitride or alumina), a third electrode body 22, and a fourth electrode body 23. As shown in FIG. 4, the third electrode body 22 and the fourth electrode body 23 are arranged with a gap between them on both sides of the center of the package substrate 2 in plan view.

The third electrode body 22 includes a first portion 221 formed on a surface 211 facing the ultraviolet light emitting element 1 of the main body 21, and a second portion 222 formed on the surface 212 opposite to the facing surface 211, and a coupling that connects both of them. Part 223. The first portion 221 and the second portion 222 have the same rectangular planar shape and overlap in plan view.
The first part 221 includes a chip connection part (third electrode) 221a that is a part connected to the semiconductor chip 110, a lens facing part 221b that is a part facing the planar peripheral edge 121a of the concave hemispherical lens 120, and a lens facing part. It has an outer edge 221c outside 221b. The second portion 222 is a connection portion with the current supply body. The coupling portion 223 exists in a through hole provided in the main body 21.

The fourth electrode body 23 includes a first portion 231 formed on the facing surface 211 of the main body 21 facing the ultraviolet light emitting element 1 and a second portion 232 formed on the opposite surface 212 of the facing surface 211, and a coupling that connects the two. Part 233. The first portion 231 and the second portion 232 have the same rectangular planar shape and overlap in plan view.
The first portion 231 includes a chip connection portion (fourth electrode) 231a that is a portion connected to the semiconductor chip 110, a lens facing portion 231b that is a portion facing the planar peripheral portion 121a of the concave hemispherical lens 120, and a lens facing portion. It has an outer edge portion 231c outside of 231b. The second portion 232 is a connection portion with the current supply body. The coupling portion 233 exists in a through hole provided in the main body 21.

In addition, a portion of the facing surface 211 of the main body 21 that is sandwiched between the lens facing portion 221b of the third electrode body 22 and the lens facing portion 231b of the fourth electrode body 23 also becomes the lens facing portion 211a.
That is, the package substrate 2 is disposed on the surface 110c side opposite to the main surface 110a of the ultraviolet light emitting element 1, and the third electrode (chip connection portion 221a) is formed in a portion overlapping the first electrode 113 in plan view. A fourth electrode (chip connection portion 231a) is formed in a portion overlapping the second electrode 114 when viewed.
The first electrode 113 and the second electrode 114 of the semiconductor chip 110 and the third electrode body 22 and the fourth electrode body 23 of the package substrate 2 are made of metal. This metal preferably contains one or more of Ag, Au, Al, Ti, Ni, Cu, Pt, W, Co, and Rh. Moreover, as a preferable form of the 1st part 221 of the 3rd electrode body 22, and the 1st part 231 of the 4th electrode body 23, they are the laminated structure which consists of Cu / Ni / Au, and the laminated structure which consists of W / NiP / Au, for example. , Au is the surface side.

Since the third electrode body 22 and the fourth electrode body 23 are made of metal, the surface of the lens facing portion 221b of the third electrode body 22 and the surface of the lens facing portion 231b of the fourth electrode body 23 are metal surfaces. is there. That is, the package substrate 2 has a metal surface on the lens side at the same position as the planar peripheral portion 121a of the concave hemispherical lens 120 in plan view.
The first connection body 3 and the second connection body 4 are, for example, gold balls, and are formed on the first electrode 113 and the second electrode 114, respectively, as indicated by a dashed line in FIG.

  The planar peripheral edge 121a of the concave hemispherical lens 120 and the third electrode body 22 of the package substrate 2 and the lens facing portions 221b and 231b of the fourth electrode body 231 are in surface contact with each other. That is, the planar peripheral edge 121a of the concave hemispherical lens 120 and the package substrate 2 are joined by contact. Since this bonding is performed by a method in which a bonding layer is not provided, the concave hemispherical lens 120 is not fixed to the package substrate 2, but the planar peripheral portion 121a and the lens facing portions 221b and 231b are in surface contact. Therefore, intrusion of dust or the like into the recess 122 can be prevented.

  It should be noted that the bonding between the planar peripheral edge 121a of the concave hemispherical lens 120 and the package substrate 2 may be performed by such surface contact, or by a bonding layer as in the second embodiment and later described below. It may be. Further, at least one of the surfaces is uneven, or even if they are flat surfaces, there is a gap between them, and this gap is partially blocked by an adhesive, etc. It may be due to partial contact without being entirely contacted.

〔Production method〕
The ultraviolet light emitting device 10 shown in FIG. 1 can be manufactured, for example, by the following method.
First, the semiconductor chip 110 is flip-chip mounted on the package substrate 2 to obtain the state shown in FIG.
Specifically, first, the first connection body 3 and the electrode facing portion (fourth electrode) 231a of the third electrode body 22 of the package substrate 2 and the electrode facing portion (fourth electrode) 231a of the fourth electrode body 23 are connected. A plurality of gold balls are arranged as the second connection body 4. Next, the semiconductor chip 110 is placed on the package substrate 2 so that the first electrode 113 and the second electrode 114 are in contact with each gold ball, and ultrasonic bonding is performed while applying pressure from the semiconductor chip 110 side. Thereby, the semiconductor chip 110 is electrically connected to the package substrate 2 by the first connection body 3 and the second connection body 4.

Next, the concave hemispherical lens 120 is bonded to the semiconductor chip 110 in the state shown in FIG.
Specifically, first, a bonding agent containing an amorphous fluororesin or a silicone resin is applied to the main surface 110a and the side surface 110b of the semiconductor chip 110.
Next, the semiconductor chip 110 is disposed in the concave portion 122 of the concave hemispherical lens 120 by covering the semiconductor chip 110 with the concave hemispherical lens 120 with the concave portion 122 facing the semiconductor chip 110. As a result, a bonding agent layer is present between the bottom surface 122a of the recess 122 and the main surface 110a of the semiconductor chip 110, and between the side surface 122b of the recess 122 and the side surface 110b of the semiconductor chip 110. Accordingly, the planar peripheral edge 121a of the concave hemispherical lens 120 contacts the third electrode body 22 of the package substrate 2 and the lens facing portions 221b and 231b of the fourth electrode body 231.

Next, the resin layer 130 is formed by curing the bonding agent layer or evaporating the solvent from the bonding agent layer. Thereby, the semiconductor chip 110 and the concave hemispherical lens 120 are joined by the resin layer 130. The thickness of the resin layer 130 is 0.1 μm or more and 1.0 mm or less.
The concave hemispherical lens 120 can be manufactured, for example, by putting raw material powder in a mold in which a male mold is disposed in a portion to be the concave portion 122 and by a sol-gel method.

As a bonding agent containing an amorphous fluororesin, “Cytop (registered trademark)” manufactured by Asahi Glass can be used. “CYTOP (registered trademark)” has a thickness of 50 μm, a transmittance of 98% at a wavelength of 265 nm, and a transmittance of 90% or more in the entire range from 210 nm to less than 300 nm. Specific examples include “Cytop (registered trademark) CTX-809SP2” containing an amorphous fluororesin having a perfluoroalkyl group.
As a bonding agent containing an amorphous fluororesin, a pad electrode (usually an electrode formed with a predetermined thickness on each of the first electrode layer 13 and the second electrode layer 14) is formed. It is more preferable to use a material containing an amorphous fluororesin having a non-reactive terminal functional group that does not exhibit a binding property to a metal.

(Action, effect)
In the ultraviolet light emitting device 10 of the first embodiment, ultraviolet light is emitted from the semiconductor chip 110 of the ultraviolet light emitting element 1 by the current supplied from the package substrate 2. This light enters the concave hemispherical lens 120 from the main surface 110a through the bottom surface 131 of the resin layer 130, and enters the concave hemispherical lens 120 from the side surface 110b through the side surface 132 of the resin layer 130. The light that enters the concave hemispherical lens 120 exits from the spherical surface.
That is, the ultraviolet light emitting element 1 of the first embodiment has a smaller amount of light that exits from the side surface of the semiconductor chip and enters the hemispherical lens than the ultraviolet light emitting element in which the semiconductor chip is bonded to the plane of the hemispherical lens that does not have the recess 122. Become more.

Moreover, since the exit surface becomes spherical by using the concave hemispherical lens 120, reflection of the emitted light at the interface between the lens and air is suppressed.
In addition, since the surfaces of the lens facing portions 221b and 231b of the package substrate 2 are metal surfaces, light reflection on the metal surfaces also occurs.
From the above, the ultraviolet light emitting device 10 of the first embodiment has a high effect of increasing the light extraction efficiency obtained by bonding the lens to the semiconductor chip.

[Second Embodiment]
〔Constitution〕
The ultraviolet light emitting device 10 </ b> A of the second embodiment shown in FIG. 6 has an ultraviolet transmissive resin layer (bonding layer) 5 that bonds the planar peripheral edge 121 a of the concave hemispherical lens 120 and the package substrate 2. Other points are the same as the ultraviolet light emitting device 10 of the first embodiment.
The ultraviolet transmissive resin layer 5 is formed of the same ultraviolet transmissive resin as the resin layer 130. The ultraviolet light transmissive resin layer 5 is formed on the entire surface of the planar peripheral portion 121a, and the third electrode body 22 and the fourth electrode body 23 of the package substrate 2 and the metal lens facing portions 221b and 231b of the fourth electrode body 23, and the ceramics of the main body 21 are made. In contact with the lens facing portion 211a. In other words, the ultraviolet light transmissive resin layer 5 joins the planar peripheral edge 121a to the metal surface and ceramic surface of the package substrate 2.

〔Production method〕
The ultraviolet light emitting device 10A can be manufactured as follows after the semiconductor chip 110 is flip-chip mounted on the package substrate 2 in the same manner as the ultraviolet light emitting device 10 of the first embodiment.
First, a bonding agent containing an amorphous fluororesin or a silicone resin is applied to the main surface 110a and the side surface 110b of the semiconductor chip 110, and the lens facing portions 221b and 231b of the third electrode body and the fourth electrode body of the package substrate 2. To do.

Next, the semiconductor chip 110 is disposed in the concave portion 122 of the concave hemispherical lens 120 by covering the semiconductor chip 110 with the concave hemispherical lens 120 with the concave portion 122 facing the semiconductor chip 110. Thereby, between the bottom surface 122a of the concave portion 122 and the main surface 110a of the semiconductor chip 110, between the side surface 122b of the concave portion 122 and the side surface 110b of the semiconductor chip 110, and the planar peripheral edge portion 121a of the concave hemispherical lens 120 and the package substrate. The bonding agent layer is present between the two lens facing portions 211a, 221b, and 231b.
Next, the resin layer 130 and the ultraviolet light transmissive resin layer 5 are formed by curing these bonding agent layers. As a result, the semiconductor chip 110 and the concave hemispherical lens 120 are bonded together by the ultraviolet transmissive resin layer 130, and the concave hemispherical lens 120 and the package substrate 2 are bonded by the ultraviolet transmissive resin layer 5. The thickness of the resin layer 130 and the ultraviolet light transmissive resin layer 5 is 0.1 μm or more and 1.0 mm or less.

(Action, effect)
In the ultraviolet light emitting device 10A of the second embodiment, the same action and effect as the ultraviolet light emitting device 10 of the first embodiment can be obtained, and by having the same ultraviolet transmissive resin layer 5 as the ultraviolet transmissive resin layer 130, The following actions and effects can also be obtained.
That is, since the concave hemispherical lens 120 and the package substrate 2 are bonded together by the ultraviolet ray transmissive resin layer 5, the sealing property between the concave hemispherical lens 120 and the package substrate 2 is improved. Further, since the resin layer 130 and the ultraviolet transmissive resin layer 5 are formed of the same ultraviolet transmissive resin and exhibit the same thermal behavior, the semiconductor chip 110 and the concave hemispherical lens 120 are peeled off and the concave hemispherical lens is formed. Peeling between 120 and the package substrate 2 hardly occurs.

The resin layer 130 and the ultraviolet light transmissive resin layer 5 may be formed of different ultraviolet light transmissive resins. In this case, the silicone resin layer has a lower ultraviolet transmittance than the amorphous fluororesin layer, but has a higher bonding strength. Therefore, the resin layer 130 is an amorphous fluororesin layer, and the ultraviolet transparent resin layer 5 is a silicone resin layer. It is preferable that Thereby, the ultraviolet transmittance between the semiconductor chip 110 and the concave hemispherical lens 120 is high, and the bonding strength between the concave hemispherical lens 120 and the package substrate 2 is increased.
Further, an ultraviolet reflective layer (for example, a metal layer having a high ultraviolet reflectance such as aluminum) is provided between the planar peripheral portion 121a and the ultraviolet transmissive resin layer 5 or between the ultraviolet transmissive resin layer 5 and the package substrate 2. It is preferable to provide it. Thereby, the improvement effect of the light extraction efficiency by the light reflection in an ultraviolet reflective layer is acquired.

When the package substrate 2 does not have a metal surface on the lens side at the same position as the planar peripheral edge 121a of the concave hemispherical lens 120 in plan view (for example, the third electrode body 22 and the fourth electrode body 23 are lenses). In some cases, the opposing surface 221b, 231b is not provided, and the opposing surface 211 of the main body 21 is exposed at this portion. In that case, it is particularly preferable to provide the ultraviolet reflective layer.
Further, when the ultraviolet reflecting layer is disposed between the planar peripheral portion 121a and the ultraviolet transmissive resin layer 5, the ultraviolet light is more than when disposed between the ultraviolet transmissive resin layer 5 and the package substrate 2. Since the amount of ultraviolet light hitting the transmissive resin layer 5 is reduced, the adhesion by the ultraviolet transmissive resin layer 5 can be maintained for a long time.

[Third embodiment]
〔Constitution〕
The ultraviolet light emitting device 10B of the third embodiment shown in FIG. 7 has an adhesive layer 6 that joins the planar peripheral edge 121a of the concave hemispherical lens 120 and the package substrate 2. Moreover, it has the ultraviolet reflective layer 7 arrange | positioned between the adhesive bond layer 6 and the plane peripheral part 121a. Other points are the same as the ultraviolet light emitting device 10 of the first embodiment.
The adhesive layer 6 is a cured layer of an adhesive (for example, a thermosetting adhesive) having higher adhesiveness than the bonding agent for the resin layer 130, and is a resin layer having a low ultraviolet transmittance. The ultraviolet reflection layer 7 is a metal layer having a high ultraviolet reflectance such as aluminum, and is formed on the entire surface of the planar peripheral portion 121 a of the concave hemispherical lens 120.
The adhesive layer 6 is in contact with the metal lens facing portions 221 b and 231 b of the third electrode body 22 and the fourth electrode body 23 of the package substrate 2 and the ceramic lens facing portion 211 a of the main body 21. That is, the adhesive layer 6 joins the planar peripheral portion 121 a to the metal surface and the ceramic surface of the package substrate 2 through the ultraviolet reflection layer 7.

〔Production method〕
Similar to the ultraviolet light emitting device 10 of the first embodiment, the ultraviolet light emitting device 10B can be manufactured as follows after the semiconductor chip 110 is flip-chip mounted on the package substrate 2.
First, a bonding agent containing an amorphous fluororesin is applied to the main surface 110a and the side surface 110b of the semiconductor chip 110.
Next, the hemispherical lens 120 with the concave portion in which the ultraviolet reflecting layer 7 is deposited on the entire surface of the planar peripheral portion 121a is placed on the semiconductor chip 110 with the concave portion 122 facing the semiconductor chip 110, so that the semiconductor chip 110 is covered with the concave hemispherical lens. It arrange | positions in the recessed part 122 of 120. FIG. As a result, a bonding agent layer containing an amorphous fluororesin was present between the bottom surface 122a of the recess 122 and the main surface 110a of the semiconductor chip 110, and between the side surface 122b of the recess 122 and the side surface 110b of the semiconductor chip 110. It becomes a state. Next, the resin layer 130 is formed by curing the bonding agent layer.

Next, a thermosetting adhesive is injected into the gap between the ultraviolet reflecting layer 7 formed on the planar peripheral edge 121 a of the concave hemispherical lens 120 and the lens facing portions 211 a, 221 b, and 231 b of the package substrate 2. Next, the adhesive layer 6 is formed by curing the adhesive.
As a result, the semiconductor chip 110 and the concave hemispherical lens 120 are bonded together by the ultraviolet light transmissive resin layer 130, and the concave hemispherical lens 120 and the package substrate 2 are bonded by the adhesive layer 6. The thickness of the resin layer 130 is 0.1 μm or more and 1.0 mm or less.

(Action, effect)
In the ultraviolet light emitting device 10B of the third embodiment, the same operations and effects as the ultraviolet light emitting device 10 of the first embodiment are obtained, and the following operations and effects are also obtained.
Since the hemispherical lens 120 with a recess and the package substrate 2 are bonded with the adhesive layer 6 having higher adhesiveness than the bonding agent for the resin layer 130, the sealing property between the hemispherical lens 120 with a recess and the package substrate 2 is improved. improves.
In the ultraviolet light emitting device 10 of the first embodiment, light reflection occurs at the metal surfaces of the lens facing portions 221b and 231b of the package substrate 2, whereas in the ultraviolet light emitting device 10B, the adhesive layer 6 and the concave portion are provided. Light reflection occurs at the ultraviolet reflecting layer 7 provided between the hemispherical lens 120. That is, in the ultraviolet light emitting device 10 </ b> B, an effect of improving the light extraction efficiency by light reflection at the ultraviolet reflection layer 7 can be obtained.

[Fourth embodiment]
An ultraviolet light emitting device 10 </ b> C of the fourth embodiment shown in FIG. 8 has a gold-tin alloy (AuSn) layer (bonding layer) 8 instead of the adhesive layer 6. The package substrate 2A has a structure different from that of the package substrate 2. Other points are the same as the ultraviolet light emitting device 10B of the third embodiment.
As shown in FIGS. 8 and 9, in the third electrode body 22A of the package substrate 2A, the lens facing portion 221b of the first portion 221 is a portion facing the entire planar peripheral portion 121a of the concave hemispherical lens 120. . Further, the peripheral portion 221c of the first portion 221 is disposed on all the peripheral portions of the package substrate 2A.

In the fourth electrode body 23 </ b> A, instead of the first portion 231 on the package substrate 2, the chip connection portion 231 a is formed on the facing surface 211 of the main body 21, and the chip connection portion 231 a and the second portion 232 are provided on the main body 21. They are connected by a connecting portion 233 in the through hole.
The ultraviolet light emitting device 10C can be manufactured by the same method as the ultraviolet light emitting device 10B of the third embodiment except for the following points.
The ultraviolet reflecting layer 7 is deposited on the entire surface of the planar peripheral portion 121a, and the concave hemispherical lens 120 in which the gold-tin alloy layer 8 is formed on the ultraviolet reflecting layer 7 is disposed with the concave portion 122 facing the semiconductor chip 110. 110. Further, after the resin layer 130 is formed by curing the bonding agent layer containing the amorphous fluororesin, the gold-tin alloy layer 8 is heated and melted and then cooled. That is, the concave hemispherical lens 120 and the lens facing portion 221b of the third electrode body 22A of the package substrate 2 are joined by a reflow method using the gold-tin alloy layer 8.

In the ultraviolet light emitting device 10C of the fourth embodiment, the same operations and effects as those of the ultraviolet light emitting device 10B of the third embodiment can be obtained, and by having the gold-tin alloy layer 8 instead of the adhesive layer 6, the following operations can be performed. The effect is also obtained.
Since the gold-tin alloy layer 8 has high adhesiveness and excellent airtightness, the ultraviolet light emitting device 10C has high durability in a high humidity environment.
In addition, the lens facing portion 231b and the peripheral portion 231c may be coupled to the chip connecting portion 231a of the fourth electrode body 23A, and the chip connecting portion 221a may be formed instead of the first portion 221 of the third electrode body 22A.

  Further, from the state of FIG. 9, the first portion 221 of the third electrode body 22A may be further separated into a chip connecting portion 221a, a lens facing portion 221b, and a peripheral edge portion 221c. That is, the chip connection portion (third electrode) 221a, the chip connection portion (fourth electrode) 231a, the lens facing portion 221b, and the peripheral portion 221c may be formed independently on the facing surface 211 of the main body 21. .

DESCRIPTION OF SYMBOLS 1 Ultraviolet light emitting element 10 Ultraviolet light emitting device 110 Semiconductor chip 110a Main surface of semiconductor chip 110b Side surface of semiconductor chip 110c Surface opposite to main surface of semiconductor chip 111 Substrate 112 Semiconductor layer 113 First electrode 114 Second electrode 120 Hemispherical lens with concave (Lens with concave parts on the entrance surface)
121 plane (incident surface)
121a Plane periphery (periphery of the concave portion of the incident surface)
122 Planar recess (recess formed on the entrance surface of the lens)
122a Bottom surface of concave portion 122b Side surface of concave portion 130 UV transparent resin layer 131 Bottom surface portion of resin layer 132 Side surface portion of resin layer 2 Package substrate 21 Main body 22 Third electrode body 221a Chip connection portion of third electrode body (third electrode) )
23 4th electrode body 231a Chip connection part (4th electrode) of 4th electrode body
3 First connection body 4 Second connection body 5 UV transmissive resin layer (bonding layer)
6 Adhesive layer 7 UV reflective layer 8 Gold-tin alloy layer (bonding layer)

Claims (11)

A semiconductor chip that emits ultraviolet rays;
A UV transmissive lens,
An ultraviolet transmissive resin layer for bonding the lens and the semiconductor chip;
Have
A concave portion is formed on the incident surface of the lens,
The semiconductor chip is disposed in the recess with a main surface that is a main light extraction surface facing the bottom surface of the recess,
The resin layer is an ultraviolet light emitting element that exists between the recess and the main surface and side surface of the semiconductor chip.   The ultraviolet light emitting element according to claim 1, wherein the resin layer is an amorphous fluororesin layer or a silicone resin layer.   The ultraviolet light-emitting element according to claim 1, wherein the lens is a hemispherical lens.   The ultraviolet light-emitting element according to claim 1, wherein the lens is made of quartz or sapphire.   The light emitting wavelength is 280 nm or less, The ultraviolet light emitting element as described in any one of Claims 1-4.   The ultraviolet light-emitting device according to claim 1, wherein the resin layer has a thickness of 0.1 μm or more and 1.0 mm or less. The ultraviolet light emitting element according to any one of claims 1 to 6, wherein a first electrode and a second electrode are formed on a surface opposite to the main surface of the semiconductor chip,
A third electrode is formed on the opposite surface side of the ultraviolet light emitting element, and a third electrode is formed on a portion overlapping the first electrode in a plan view, and a fourth electrode is formed on a portion overlapping the second electrode in a plan view. A substrate;
A first connection body for electrically connecting the first electrode and the third electrode;
A second connector for electrically connecting the second electrode and the fourth electrode;
With
An ultraviolet light emitting device in which a peripheral portion of the concave portion of the incident surface is bonded to the base.   The ultraviolet light emitting device according to claim 7, wherein a peripheral edge portion of the concave portion of the incident surface and the base are bonded by a bonding layer that is an ultraviolet light transmissive resin layer.   The ultraviolet light emitting device according to claim 7, wherein a peripheral edge portion of the concave portion of the incident surface and the base body are bonded by a bonding layer that is an alloy layer containing gold (Au) and tin (Sn).   The ultraviolet light-emitting device according to claim 8, further comprising an ultraviolet reflective layer disposed between the bonding layer and the base or the peripheral portion.   The ultraviolet light emitting device according to claim 7 or 8, wherein the base has a metal surface on the lens side at the same position as a peripheral edge of the concave portion of the incident surface in a plan view.

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