JP2019186290A - 温調システム - Google Patents
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- JP2019186290A JP2019186290A JP2018071854A JP2018071854A JP2019186290A JP 2019186290 A JP2019186290 A JP 2019186290A JP 2018071854 A JP2018071854 A JP 2018071854A JP 2018071854 A JP2018071854 A JP 2018071854A JP 2019186290 A JP2019186290 A JP 2019186290A
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- 239000003507 refrigerant Substances 0.000 claims description 111
- 238000012545 processing Methods 0.000 claims description 58
- 238000000034 method Methods 0.000 abstract description 14
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000009834 vaporization Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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Abstract
Description
最初に本開示の実施態様を列記して説明する。本開示の一態様によるシステムは、被処理体を載置する載置台の温度を調整する温調システムである。この温調システムは、載置台内に設けられ冷媒による熱交換を行う熱交換部と、熱交換部から排出された冷媒を圧縮する圧縮器と、圧縮器によって圧縮された冷媒を凝縮する凝縮器と、凝縮器の出力端と熱交換部の入力端との間に設けられ冷媒を前記熱交換部に送る供給ラインと、供給ラインに設けられた膨張弁と、圧縮器の出力端と膨張弁の出力端との間に設けられた気体ラインと、気体ラインに設けられた分流弁と、載置台の温度を検出する検出装置と、検出装置によって検出された載置台の温度に基づいて載置台への入熱と膨張弁および分流弁のそれぞれの開度とを調節する制御部と、を備える。制御部は、膨張弁を開とし分流弁を閉としつつ載置台が第1温度となるように膨張弁の開度を調節している状況において載置台の温度を昇温させる場合に、載置台に入熱すると共に、分流弁を開としつつ載置台の温度が第1温度より高い第2温度に至るように分流弁の開度を調節する。
以下、図面を参照して種々の実施形態について詳細に説明する。なお、各図面において同一または相当の部分に対しては同一の符号を附すこととする。
図5は、第1実施例に係る温調システムCSの構成を示す図である。温調システムCSは、チラーユニットCH、供給ラインSL、排出ラインDLd(第1排出ライン)、熱交換部HEを備える。
Φ0=Qmr×Wr=Qmr×(h1−h4)。
ただし、Wr,h1,h4のそれぞれは以下のように定義される。
Wr:冷凍効果[kJ/kg]。
h1:蒸発室VP出口の冷媒(過熱蒸気)の比エンタルピー[kJ/kg]。
h4:蒸発室VP入口の冷媒(湿り蒸気)の比エンタルピー[kJ/kg]。
また、温調システムCSによって被冷却体を冷却できる能力のことを冷凍能力と呼ぶ。したがって、冷凍能力は冷媒の冷凍効果、冷媒の循環量と比例関係にある。また、蒸発室VPが分室VP‐1〜分室VP−nに分割される場合にも、冷媒循環量が調整されることによって、分室VP‐1〜分室VP−nのそれぞれの冷凍能力が制御され得る。
図9は、一実施形態に係る温調システムCSの他の構成(第2実施例)を示す図である。第2実施例に係る温調システムCSでは、第1実施例の蒸発室VPおよび貯留室RTが変更されている。
図13は、一実施形態に係る温調システムCSの他の構成(第3実施例)を示す図である。第3実施例に係る温調システムCSは、第1実施例に対して排出ラインDLu(第2排出ライン)が加えられた構成を有する。
図14は、一実施形態に係る温調システムCSの他の構成(第4実施例)を示す図である。第4実施例に係る温調システムCSは、第2実施例に対して、排出ラインDLuが加えられた構成を有する。第4実施例に係る排出ラインDLuは、枝ラインDLu‐1〜枝ラインDLu‐nを備える。
図16は、一実施形態に係る温調システムCSの他の構成(第5実施例)を示す図である。第5実施例に係る温調システムCSは、複数のチラーユニット(チラーユニットCH‐1〜チラーユニットCH‐n)を有する。チラーユニットCH‐1〜チラーユニットCH‐nのそれぞれは、第2実施例のチラーユニットCHと同様の機能を有する。特に、チラーユニットCH‐1〜チラーユニットCH‐nのそれぞれ(例えばチラーユニットCH‐1)は、互いに連通する一組の第2分室と第1分室とに対して(例えばチラーユニットCH‐1に接続する分室RT‐1と分室VP‐1とに対して)、冷媒の供給および排出を行う。
Claims (6)
- 被処理体が載置される載置台の温度を調節する温調システムであって、
前記載置台内に設けられ、冷媒による熱交換を行う熱交換部と、
前記熱交換部から排出された前記冷媒を圧縮する圧縮器と、
前記圧縮器によって圧縮された前記冷媒を凝縮する凝縮器と、
前記凝縮器の出力端と前記熱交換部の入力端との間に設けられ前記冷媒を前記熱交換部に送る供給ラインと、
前記供給ラインに設けられた膨張弁と、
前記圧縮器の出力端と、前記膨張弁の出力端との間に設けられた気体ラインと、
前記気体ラインに設けられた分流弁と、
前記載置台の温度を検出する検出装置と、
前記検出装置によって検出された前記載置台の温度に基づいて、該載置台への入熱と、前記膨張弁および前記分流弁のそれぞれの開度とを調節する制御部と、
を備え、
前記制御部は、前記膨張弁を開とし前記分流弁を閉としつつ前記載置台が第1温度となるように該膨張弁の開度を調節している状況において前記載置台の温度を昇温させる場合に、該載置台に入熱すると共に、該分流弁を開としつつ該載置台の温度が該第1温度より高い第2温度に至るように該分流弁の開度を調節する、
温調システム。 - 前記制御部は、前記載置台の温度が前記第2温度に至ると、該載置台への入熱を終了すると共に、前記分流弁を閉とする、
請求項1に記載の温調システム。 - 前記制御部は、前記分流弁の開度の調節によって、前記載置台の温度が前記第2温度に至るまでの時間を調節する、
請求項1または2に記載の温調システム。 - 前記載置台は、プラズマ処理装置の処理容器内に設けられている、
請求項1〜3の何れか一項に記載の温調システム。 - 前記載置台への入熱は、プラズマによって行われる、
請求項4に記載の温調システム。 - 前記載置台は、ヒータを備え、
前記載置台への入熱は、前記ヒータによって行われる、
請求項1〜5の何れか一項に記載の温調システム。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018071854A JP7101024B2 (ja) | 2018-04-03 | 2018-04-03 | 温調システム |
CN201910260757.7A CN110349825B (zh) | 2018-04-03 | 2019-04-02 | 温度调节系统 |
US16/372,451 US20190304759A1 (en) | 2018-04-03 | 2019-04-02 | Temperature adjustment system |
KR1020190038660A KR20190116089A (ko) | 2018-04-03 | 2019-04-02 | 온도 조절 시스템 |
TW108111896A TWI798411B (zh) | 2018-04-03 | 2019-04-03 | 溫度調節系統 |
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JP2018071854A JP7101024B2 (ja) | 2018-04-03 | 2018-04-03 | 温調システム |
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JP2019186290A true JP2019186290A (ja) | 2019-10-24 |
JP2019186290A5 JP2019186290A5 (ja) | 2021-01-07 |
JP7101024B2 JP7101024B2 (ja) | 2022-07-14 |
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JP (1) | JP7101024B2 (ja) |
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Citations (6)
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JP2007116099A (ja) * | 2005-10-20 | 2007-05-10 | Applied Materials Inc | 容量結合プラズマリアクタにおいて、ウェハ支持体を均一な温度で冷却する方法 |
JP2008501927A (ja) * | 2004-06-02 | 2008-01-24 | アドバンスト・サーマル・サイエンシーズ・コーポレイション | 熱制御方法及びそのシステム |
JP2008034408A (ja) * | 2006-07-26 | 2008-02-14 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2012137271A (ja) * | 2010-12-28 | 2012-07-19 | Asahi Kogyosha Co Ltd | 精密空調機 |
JP2013105915A (ja) * | 2011-11-14 | 2013-05-30 | Tokyo Electron Ltd | 温度制御装置、プラズマ処理装置、処理装置及び温度制御方法 |
JP2015092580A (ja) * | 2014-11-28 | 2015-05-14 | 株式会社日立ハイテクノロジーズ | 試料の温度を制御する温度制御装置、試料を載置する試料台及びこれらを備えたプラズマ処理装置 |
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JP4209057B2 (ja) * | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法 |
US7221553B2 (en) * | 2003-04-22 | 2007-05-22 | Applied Materials, Inc. | Substrate support having heat transfer system |
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KR20190116089A (ko) | 2019-10-14 |
CN110349825B (zh) | 2023-02-17 |
US20190304759A1 (en) | 2019-10-03 |
JP7101024B2 (ja) | 2022-07-14 |
TWI798411B (zh) | 2023-04-11 |
CN110349825A (zh) | 2019-10-18 |
TW201942529A (zh) | 2019-11-01 |
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