JP2019183192A - Sputtering apparatus - Google Patents

Sputtering apparatus Download PDF

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JP2019183192A
JP2019183192A JP2018071518A JP2018071518A JP2019183192A JP 2019183192 A JP2019183192 A JP 2019183192A JP 2018071518 A JP2018071518 A JP 2018071518A JP 2018071518 A JP2018071518 A JP 2018071518A JP 2019183192 A JP2019183192 A JP 2019183192A
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substrate
target
magnet
disposed
distance
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裕夫 大久保
Hiroo Okubo
裕夫 大久保
大士 小林
Hiroshi Kobayasi
大士 小林
貴裕 小野
Takahiro Ono
貴裕 小野
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Ulvac Inc
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Ulvac Inc
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Priority to JP2018071518A priority Critical patent/JP2019183192A/en
Priority to TW108108633A priority patent/TWI802660B/en
Priority to KR1020190037825A priority patent/KR20190116078A/en
Priority to CN201910266341.6A priority patent/CN110344007A/en
Publication of JP2019183192A publication Critical patent/JP2019183192A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

To unifomize an in-plane distribution of a property of a thin film.SOLUTION: Block electrodes 18a, 18b are arranged on a short side of an anode electrode 17 arranged around a substrate 16 and a distance between a target 13 and ground potential is shortened on the block electrodes 18a, 18b. A large-strength plasma tends to be formed on the substrate 16 close to both edges of a track-form shaped plasma area 10. Because a larger strength plasma is formed on the block electrodes 18a, 18b, a plasma is uniformized on the substrate 16 and in-plane distribution of the property of a thin film formed on the substrate 16 is uniformized.SELECTED DRAWING: Figure 1

Description

本発明は、スパッタリング技術にかかり、特に、金属薄膜の面内の特性分布を均一にするスパッタリング技術に関する。   The present invention relates to a sputtering technique, and more particularly, to a sputtering technique for uniforming the in-plane characteristic distribution of a metal thin film.

スパッタリング方法による薄膜形成は広く用いられている技術であり、近年では大型基板に薄膜を形成するために、大面積基板に特性分布が均一な薄膜を形成する技術が求められている。   Thin film formation by sputtering is a widely used technique, and in recent years, in order to form a thin film on a large substrate, a technique for forming a thin film having a uniform characteristic distribution on a large area substrate is required.

図６（平面図とＥ−Ｅ線、Ｆ−Ｆ線截断断面図）のプラズマ装置１０２は、カソード電極１１２の表面にターゲット１１３が配置され、裏面に外周磁石１２５と内側磁石１２６とがヨーク１２７に配置された複数の磁石装置１１５1〜１１５5が設けられており、ターゲット１１３がスパッタされると、ターゲット１１３と対面して基板配置部１１４上に配置された基板１１６の表面に薄膜が形成される。 In the plasma apparatus 102 of FIG. 6 (plan view, EE line, and FF line cut-off cross section), a target 113 is disposed on the surface of the cathode electrode 112, and an outer peripheral magnet 125 and an inner magnet 126 are disposed on the rear surface of the yoke 127. a plurality of magnets 115 1-115 5 disposed is provided, when the target 113 is sputtered, thin film on the surface of the facing target 113 substrate 116 disposed on the substrate placement portion 114 is formed Is done.

基板１１６の外周上には、アノード電極１１７が配置されており、ターゲット１１３表面に形成されるプラズマが均一になるようにされている。
しかしながら基板１１６が一層大型化し、それに連れてターゲット１１３や磁石装置１１５1〜１１５5が大型化してきたところ、基板１１６の短辺に近い領域と、その間の中央の部分とでは、形成される薄膜の特性の差が大きくなってきた。 An anode electrode 117 is disposed on the outer periphery of the substrate 116 so that the plasma formed on the surface of the target 113 is uniform.
However, when the substrate 116 is further increased in size and the target 113 and the magnet devices 115 1 to 115 5 are increased in size, the thin film formed in the region near the short side of the substrate 116 and the central portion therebetween. The difference in the characteristics of

短辺部分の薄膜の抵抗値と中央部分の薄膜の抵抗値が大きく異なると、基板表面に形成される発光層の発光分布が異なってしまい、不均一な明るさの画面となる。   If the resistance value of the thin film in the short side portion and the resistance value of the thin film in the central portion are greatly different, the light emission distribution of the light emitting layer formed on the substrate surface is different, resulting in a non-uniform brightness screen.

下記特許文献には、移動可能なマグネトロンプラズマに連動した接地電位電極を配置して膜質や膜厚の均一化を図った大型基板対応のマグネトロンスパッタ装置が記載されている。   The following patent document describes a magnetron sputtering apparatus for a large-sized substrate in which a ground potential electrode interlocked with a movable magnetron plasma is arranged to achieve uniform film quality and film thickness.

特開平０７−３３１４３３号公報JP 07-331433 A

本発明は上記従来技術の不都合を解決するために創作されたものであり、その目的は、薄膜の特性分布を均一にすることにあり、特に、細長のマグネトロン磁石の端部に近い基板の縁付近の領域の薄膜特性と、基板の中央付近の領域の薄膜特性との差を小さくすることにある。   The present invention was created to solve the disadvantages of the prior art described above, and its purpose is to make the characteristic distribution of the thin film uniform, and in particular, the edge of the substrate near the end of the elongated magnetron magnet. The purpose is to reduce the difference between the thin film characteristics in the vicinity of the area and the thin film characteristics in the area near the center of the substrate.

上記課題を解決するために本発明は、真空槽と、前記真空槽の内部に配置されたターゲットと、前記ターゲットの裏面側に配置されスパッタ電源に接続されるカソード電極と、前記カソード電極の裏面側に配置された複数の磁石装置と、基板が配置される基板配置部と、接地電位に接続され前記基板の外周上を覆うリング形形状のアノード電極と、を有し、各前記磁石装置には細長のリング形形状の外周磁石とその内側に配置された内側磁石とが設けられ、前記ターゲットの表面には前記外周磁石とその内側の前記内側磁石との間で形成される磁束が漏洩され、前記ターゲットがスパッタリングされて前記基板表面に薄膜が形成されるスパッタリング装置であって、前記外周磁石とその内側の前記内側磁石とは離間され、前記外周磁石とその内側の前記内側磁石との間の領域であるプラズマ領域は細長のリング形形状にされ、前記プラズマ領域の両端と前記基板の表面が位置する平面との間には、前記アノード電極よりも厚みが厚く接地電位に接続されたブロック電極が配置され、前記アノード電極の表面と前記ターゲットの表面との間のＴＡ距離よりも、前記ブロック電極の表面と前記ターゲットの表面との間のＴＢ距離の方が短くされたスパッタリング装置である。
本発明は、前記ＴＢ距離は、前記ターゲットの表面と前記基板配置部に配置された前記基板の表面との間のＴＳ距離の１０％より大きく、９０％より小さくされたスパッタリング装置である。
本発明は、前記ターゲットは平板状の金属モリブデン板であり、前記薄膜は金属モリブデン薄膜であるスパッタリング装置である。 In order to solve the above problems, the present invention provides a vacuum chamber, a target disposed inside the vacuum chamber, a cathode electrode disposed on the back side of the target and connected to a sputtering power source, and a back surface of the cathode electrode A plurality of magnet devices disposed on the side, a substrate placement portion on which a substrate is disposed, and a ring-shaped anode electrode that is connected to a ground potential and covers the outer periphery of the substrate. Is provided with an elongated ring-shaped outer peripheral magnet and an inner magnet disposed on the inner side thereof, and magnetic flux formed between the outer peripheral magnet and the inner magnet on the inner side is leaked to the surface of the target. A sputtering apparatus in which the target is sputtered to form a thin film on the substrate surface, wherein the outer peripheral magnet and the inner magnet inside thereof are separated from each other, and the outer peripheral magnet and the outer magnet A plasma region, which is a region between the inner magnet on the side, is formed in an elongated ring shape, and the thickness between the both ends of the plasma region and the plane on which the surface of the substrate is located is larger than that of the anode electrode. A block electrode thickly connected to the ground potential is disposed, and a TB distance between the surface of the block electrode and the surface of the target is larger than a TA distance between the surface of the anode electrode and the surface of the target. Is a shortened sputtering apparatus.
The present invention is the sputtering apparatus in which the TB distance is larger than 10% and smaller than 90% of the TS distance between the surface of the target and the surface of the substrate disposed in the substrate placement portion.
The present invention is the sputtering apparatus, wherein the target is a flat metal molybdenum plate, and the thin film is a metal molybdenum thin film.

基板表面のうち、細長のマグネトロン磁石の端部に近い場所と基板の中央の場所との薄膜特性の差が小さくなる。
その結果、長方形基板に形成する薄膜の特性について、短辺付近の領域の特性と、その領域で挟まれる中央付近の領域の特性とが均一になる。 Of the substrate surface, the difference in thin film characteristics between the location near the end of the elongated magnetron magnet and the location in the center of the substrate is reduced.
As a result, regarding the characteristics of the thin film formed on the rectangular substrate, the characteristics of the area near the short side and the characteristics of the area near the center sandwiched between the areas are uniform.

本発明のスパッタリング装置Sputtering apparatus of the present invention 本発明のスパッタリング装置の内部構造を説明するための平面図とそのＡ−Ａ線截断断面図とＢ−Ｂ線截断断面図The top view for demonstrating the internal structure of the sputtering device of this invention, its AA line cutting | disconnection sectional drawing, and BB line cutting | disconnection sectional drawing 本発明に用いられる磁石装置を説明するための平面図とＣ−Ｃ線截断断面図とＤ−Ｄ線截断断面図The top view for demonstrating the magnet apparatus used for this invention, CC line cutting sectional drawing, and DD line cutting sectional drawing (ａ)〜(ｃ)：その磁石装置の動作を説明するための断面図(a)-(c): Sectional drawing for demonstrating operation | movement of the magnet apparatus モリブデン薄膜の抵抗分布を説明するためのグラフGraph for explaining the resistance distribution of molybdenum thin film 従来技術のスパッタリング装置を説明するための図The figure for demonstrating the sputtering apparatus of a prior art

図１の符号２は、本発明のスパッタリング装置であり、真空槽１１を有している。図２は、後述するアノード電極１７の外周よりも内側の部分の平面図と、そのＡ−Ａ線截断断面図とＢ−Ｂ線截断断面図である。   Reference numeral 2 in FIG. 1 is a sputtering apparatus of the present invention, which has a vacuum chamber 11. FIG. 2 is a plan view of a portion inside the outer periphery of the anode electrode 17 to be described later, and a cross-sectional view taken along line AA and a cross-sectional view taken along line BB.

真空槽１１の内部には、長方形形状のターゲット１３が配置されており、そのターゲット１３の裏面側には、カソード電極１２が配置されている。
カソード電極１２の表面はターゲット１３の裏面に接触されている。 A rectangular target 13 is arranged inside the vacuum chamber 11, and a cathode electrode 12 is arranged on the back side of the target 13.
The surface of the cathode electrode 12 is in contact with the back surface of the target 13.

カソード電極１２の裏面側には、磁石ケース５１が配置されており、磁石ケース５１の内部には複数（ここでは５個）の磁石装置１５1〜１５5が配置されている。磁石装置１５1〜１５5はマグネトロン磁石と呼ばれている。 A magnet case 51 is disposed on the back surface side of the cathode electrode 12, and a plurality of (here, five) magnet devices 15 1 to 15 5 are disposed inside the magnet case 51. The magnet devices 15 1 to 15 5 are called magnetron magnets.

カソード電極１２の裏面側に配置された磁石装置１５1〜１５5は、基本的に同じ形状、同じ大きさであり、図３に、１個の磁石装置１５1〜１５5の平面図と、そのＣ−Ｃ線截断断面図とＤ−Ｄ線截断断面図とを示す。 The magnet devices 15 1 to 15 5 arranged on the back surface side of the cathode electrode 12 have basically the same shape and the same size, and FIG. 3 is a plan view of one magnet device 15 1 to 15 5 . The CC sectional view taken along the line and the DD sectional view taken along the line are shown.

磁石装置１５1〜１５5はリング形形状の外周磁石２５と、外周磁石２５の中に配置された直線形形状の内側磁石２６とを有しており、外周磁石２５と内側磁石２６とはそれぞれ細長にされており、各磁石装置１５1〜１５5は細長になり長手方向を有している。 The magnet devices 15 1 to 15 5 each have a ring-shaped outer peripheral magnet 25 and a linear inner magnet 26 disposed in the outer peripheral magnet 25. The outer peripheral magnet 25 and the inner magnet 26 are respectively are elongated, each magnet device 15 1 to 15 5 has a longitudinal become elongated.

ここでは、各磁石装置１５1〜１５5の外周磁石２５とターゲット１３の裏面との間の距離は等しくされており、また、各磁石装置１５1〜１５5の内側磁石２６とターゲット１３の裏面との間の距離も等しくされているが、本発明はそれに限定されるものではなく、膜厚の分布や膜質の分布を均一にするために、磁石装置１５1〜１５5とターゲット１３の裏面との間の距離が異なっていたり、磁石装置１５1〜１５5とターゲット１３の裏面との間が非平行に配置されていてもよい。 Here, the distance between the outer peripheral magnet 25 of each of the magnet devices 15 1 to 15 5 and the back surface of the target 13 is made equal, and the inner magnet 26 of each of the magnet devices 15 1 to 15 5 and the back surface of the target 13. However, the present invention is not limited to this, and in order to make the film thickness distribution and the film quality distribution uniform, the magnet devices 15 1 to 15 5 and the back surface of the target 13 are arranged. May be different, or the magnet devices 15 1 to 15 5 and the back surface of the target 13 may be arranged non-parallel.

また、ここでは、各磁石装置１５1〜１５5の外周磁石２５とターゲット１３の裏面との間の距離と、内側磁石２６とターゲット１３の裏面との間の距離とも等しくされているが、各磁石装置１５1〜１５5の中で、内側磁石２６とターゲット１３の裏面との間の距離が異なる磁石装置１５1〜１５5や、外周磁石２５とターゲット１３の裏面との間の距離が異なる磁石装置１５1〜１５5が含まれていてもよい。 Here, the distance between the outer peripheral magnet 25 of each of the magnet devices 15 1 to 15 5 and the back surface of the target 13 and the distance between the inner magnet 26 and the back surface of the target 13 are also equal. among the magnet device 15 1 to 15 5, is and different magnet device 15 1 to 15 5 distanced from the back surface of the inner magnet 26 and the target 13, the distance between the rear surface of the outer peripheral magnet 25 and the target 13 different Magnet devices 15 1 to 15 5 may be included.

外周磁石２５の二個の磁極のうち、一方の磁極がカソード電極１２に向けて配置され、他方の磁極がカソード電極１２とは反対側に向けられて、ヨーク２７の表面と接触して配置されており、また、内側磁石２６の二個の磁極のうち、一方の磁極がカソード電極１２に向けて配置され、外周磁石２５のカソード電極１２に向けられた磁極と内側磁石２６のカソード電極１２に向けられた磁極との間に磁束が形成され、その磁束はターゲット１３表面に漏洩され、アーチ形形状に湾曲される。   Of the two magnetic poles of the outer peripheral magnet 25, one magnetic pole is disposed toward the cathode electrode 12, and the other magnetic pole is disposed opposite to the cathode electrode 12, and is disposed in contact with the surface of the yoke 27. In addition, one of the two magnetic poles of the inner magnet 26 is arranged toward the cathode electrode 12, and the magnetic pole directed to the cathode electrode 12 of the outer peripheral magnet 25 and the cathode electrode 12 of the inner magnet 26 are arranged. A magnetic flux is formed between the magnetic poles and the magnetic poles, and the magnetic flux leaks to the surface of the target 13 and is bent into an arch shape.

外周磁石２５と内側磁石２６との他方の磁極はカソード電極１２とは反対側に向けられて、外周磁石２５の磁極が接触したヨーク２７の表面と接触して配置されている。   The other magnetic pole of the outer magnet 25 and the inner magnet 26 is directed to the opposite side of the cathode electrode 12 and is disposed in contact with the surface of the yoke 27 with which the magnetic pole of the outer magnet 25 is in contact.

外周磁石２５のカソード電極１２に向けられた磁極と、内側磁石２６のカソード電極１２に向けられた磁極は一方がＮ極であり、他方がＳ極であり、カソード電極１２に向けられた磁極間で形成される磁束はターゲット１３の表面にアーチ形形状に漏洩し、ターゲット１３表面の電子密度を増加させるようになっている。   One of the magnetic poles directed to the cathode electrode 12 of the outer peripheral magnet 25 and the magnetic poles directed to the cathode electrode 12 of the inner magnet 26 is an N pole, the other is an S pole, and between the magnetic poles directed to the cathode electrode 12 Is leaked in an arch shape on the surface of the target 13 to increase the electron density on the surface of the target 13.

真空槽１１内のターゲット１３と対面する位置には、基板配置部１４が配置されている。
基板配置部１４は長方形形状であり、基板配置部１４の上には成膜対象である長方形の基板１６が配置されている。 A substrate placement unit 14 is placed at a position facing the target 13 in the vacuum chamber 11.
The substrate placement unit 14 has a rectangular shape, and a rectangular substrate 16 as a film formation target is placed on the substrate placement unit 14.

基板１６はターゲット１３よりも小さくなっており、以下、基板配置部１４上の基板１６の表面が位置する平面に投影した場合の位置関係で内側と外側を決めるものとすると、基板１６の外周はターゲット１３の外周よりも内側に配置されている。   The substrate 16 is smaller than the target 13, and hereinafter, the outer periphery of the substrate 16 is determined based on the positional relationship when projected onto the plane on which the surface of the substrate 16 on the substrate placement unit 14 is positioned. It is arranged inside the outer periphery of the target 13.

ターゲット１３と基板１６とは、ターゲット１３の長辺と基板１６の長辺とは平行になるように配置されており、ターゲット１３の表面と基板１６の表面とも平行になるように配置されている。   The target 13 and the substrate 16 are disposed so that the long side of the target 13 and the long side of the substrate 16 are parallel to each other, and the surface of the target 13 and the surface of the substrate 16 are also parallel. .

磁石装置１５1〜１５5の長手方向の長さは、ターゲット１３の長手方向の長さとほぼ同じ長さであり、基板１６の長辺はターゲット１３の長手方向の長さよりも短くされ、また、基板１６の長辺は磁石装置１５1〜１５5の長手方向の長さよりも短くされている。 The length of the magnet devices 15 1 to 15 5 in the longitudinal direction is substantially the same as the length of the target 13 in the longitudinal direction, the long side of the substrate 16 is made shorter than the length of the target 13 in the longitudinal direction, The long side of the substrate 16 is shorter than the length in the longitudinal direction of the magnet devices 15 1 to 15 5 .

各磁石装置１５1〜１５5は、ヨーク２７の裏面側が移動板５２に接触して移動板５２上に配置されている。
各磁石装置１５1〜１５5は、長手方向が互いに平行にされて、ターゲット１３と基板１６の長辺と平行にされて、短辺が伸びる方向に一列に並べられている。 Each of the magnet devices 15 1 to 15 5 is arranged on the moving plate 52 with the back surface side of the yoke 27 contacting the moving plate 52.
The magnet devices 15 1 to 15 5 are arranged in a line in a direction in which the long sides are parallel to each other, parallel to the long sides of the target 13 and the substrate 16, and the short sides are extended.

真空槽１１の外部には移動装置５３が配置されており、移動装置５３が動作すると移動板５２はターゲット１３の表面と平行な平面内で移動し、各磁石装置１５1〜１５5は移動板５２と一緒に移動する。
ターゲット１３の表面に漏洩した磁束は、磁石装置１５1〜１５5の移動と共に移動する。 A moving device 53 is disposed outside the vacuum chamber 11. When the moving device 53 operates, the moving plate 52 moves in a plane parallel to the surface of the target 13, and each of the magnet devices 15 1 to 15 5 moves to the moving plate. Move with 52.
The magnetic flux leaking to the surface of the target 13 moves with the movement of the magnet devices 15 1 to 15 5 .

移動の際に各磁石装置１５1〜１５5は、外周磁石２５とターゲット１３の表面との間の距離及び裏面との間の距離に変化はなく一定距離が維持される。また、内側磁石２６とターゲット１３の表面との間の距離及び裏面との間の距離に変化はなく一定距離が維持される。 When moving, each of the magnet devices 15 1 to 15 5 does not change in the distance between the outer peripheral magnet 25 and the surface of the target 13 and the distance between the back surface and maintains a constant distance. Further, there is no change in the distance between the inner magnet 26 and the surface of the target 13 and the distance between the rear surface and the constant distance is maintained.

従って、各磁石装置１５1〜１５5は移動板５２の移動と共に、一緒にターゲット１３の表面と平行な平面内を移動する。図４(ａ)は、各磁石装置１５1〜１５5のそれぞれが移動する範囲の中央に各磁石装置１５1〜１５5が位置する状態を示し、同図(ｂ)は、図面右端に位置する状態、同図(ｃ)は図面左端に位置する状態を示しており、同図(ｂ)の状態と同図(ｃ)の状態の間を繰り返し移動する。 Accordingly, each of the magnet devices 15 1 to 15 5 moves together in the plane parallel to the surface of the target 13 as the moving plate 52 moves. 4 (a) shows a state in which each of the magnet device 15 1 to 15 5 is located, each magnet device 15 1 to 15 5 in the middle of the range of movement, Fig. (B) is located in the drawing right end (C) shows a state located at the left end of the drawing, and repeatedly moves between the state shown in (b) and the state shown in (c).

次に、基板１６とターゲット１３との間には、接地電位に接続されたアノード電極１７が配置されている。
アノード電極１７は四角リング形形状であり、中央に開口１９が形成されている。アノード電極１７の外周と内周とは長方形形状であり、アノード電極１７の外周は基板配置部１４に配置された基板１６の外周よりも外側に位置するようにされている。 Next, an anode electrode 17 connected to the ground potential is disposed between the substrate 16 and the target 13.
The anode electrode 17 has a square ring shape, and an opening 19 is formed at the center. The outer periphery and inner periphery of the anode electrode 17 are rectangular, and the outer periphery of the anode electrode 17 is positioned outside the outer periphery of the substrate 16 disposed in the substrate placement portion 14.

この例では、アノード電極１７の内周は基板１６の外周よりも内側に位置するようにされており、アノード電極１７の四角リング形形状の二本の長辺部分は基板１６の長辺上に配置され、二本の短辺部分は基板１６の短辺上に配置され、基板配置部１４上の基板１６の外周はアノード電極１７によって覆われて開口１９の底面には、基板１６の外周よりも内側の部分が露出されている。   In this example, the inner circumference of the anode electrode 17 is located inside the outer circumference of the substrate 16, and the two long side portions of the square ring shape of the anode electrode 17 are on the long side of the substrate 16. The two short side portions are arranged on the short side of the substrate 16, the outer periphery of the substrate 16 on the substrate arrangement part 14 is covered with the anode electrode 17, and the bottom surface of the opening 19 is formed on the bottom surface of the substrate 16 from the outer periphery of the substrate 16. The inner part is also exposed.

真空槽１１には真空排気装置２１とガス導入装置２３とが接続されており、真空槽１１は真空排気装置２１によって真空排気され、真空槽１１の内部には真空雰囲気が形成されている。   A vacuum exhaust device 21 and a gas introduction device 23 are connected to the vacuum chamber 11, and the vacuum chamber 11 is evacuated by the vacuum exhaust device 21, and a vacuum atmosphere is formed inside the vacuum chamber 11.

真空槽１１の外部にはカソード電極１２に接続されたスパッタ電源２２が設けられており、真空雰囲気が形成された真空槽１１の内部にガス導入装置２３からスパッタリングガスを導入し、内部が所定圧力で安定したところでスパッタ電源２２からスパッタリング電圧を出力し、カソード電極１２に印加する。   A sputtering power source 22 connected to the cathode electrode 12 is provided outside the vacuum chamber 11, and a sputtering gas is introduced from a gas introduction device 23 into the vacuum chamber 11 in which a vacuum atmosphere is formed. When stabilized, a sputtering voltage is output from the sputtering power source 22 and applied to the cathode electrode 12.

ターゲット１３は金属が板状に成形された平板状ターゲットであり、その表面近傍にスパッタリングガスのプラズマが形成され、プラズマ中の正イオンが加速され、スパッタリングガスの粒子がターゲット１３に入射し、ターゲット１３はスパッタリングされ、ターゲット１３を構成する物質の粒子がスパッタリング粒子としてターゲット１３の表面から放出され、基板１６に向けて飛行し、基板１６の表面に到着して薄膜を成長させる。
薄膜が所定膜厚に形成されると、基板１６は真空槽１１の外部に搬出される。 The target 13 is a flat target in which a metal is formed into a plate shape. Sputtering gas plasma is formed in the vicinity of the surface, positive ions in the plasma are accelerated, and sputtering gas particles are incident on the target 13. 13 is sputtered, and particles of the substance constituting the target 13 are emitted as sputtering particles from the surface of the target 13, fly toward the substrate 16, reach the surface of the substrate 16, and grow a thin film.
When the thin film is formed to a predetermined thickness, the substrate 16 is carried out of the vacuum chamber 11.

このように本発明によって基板１６の表面に薄膜が形成されるが、大型の基板１６表面に形成された金属薄膜の抵抗値は、基板１６の位置によって異なることになる。   Thus, although a thin film is formed on the surface of the substrate 16 according to the present invention, the resistance value of the metal thin film formed on the surface of the large substrate 16 varies depending on the position of the substrate 16.

抵抗値の分布はプラズマの強度分布と密接な関連があり、本スパッタリング装置２のプラズマを説明すると、先ず、各磁石装置１５1〜１５5の外周磁石２５と内側磁石２６との間に位置するターゲット１３の表面に大きな強度のプラズマが形成される点にマグネトロンスパッタリングの特徴がある。 The distribution of the resistance value is closely related to the intensity distribution of the plasma. The plasma of the sputtering apparatus 2 will be described. First, the resistance value distribution is located between the outer magnet 25 and the inner magnet 26 of each of the magnet devices 15 1 to 15 5. A feature of magnetron sputtering is that a plasma with high intensity is formed on the surface of the target 13.

各磁石装置１５1〜１５5の外周磁石２５はスパッタリングされるターゲットの面積を大きくするために細長のリング形形状にされており、内側磁石２６は直線形形状であるから、外周磁石２５と内側磁石２６との間は、細長のリング形形状になる。従って、形成される強度が大きいプラズマも、磁石装置１５1〜１５5毎に形成されるリング形形状になっている。 The outer peripheral magnet 25 of each of the magnet devices 15 1 to 15 5 has an elongated ring shape in order to increase the area of the target to be sputtered, and the inner magnet 26 has a linear shape. A gap between the magnets 26 is an elongated ring shape. Accordingly, the plasma having a high intensity is also formed in a ring shape formed for each of the magnet devices 15 1 to 15 5 .

細長のリング形形状のプラズマは直線部分よりも端部の方がプラズマ強度が大きくなることが知られており、特に、複数の細長のリング形形状のプラズマが平行に並べられると、リング形形状のプラズマの端部が並べられた部分のプラズマ強度の方が、リング形形状のプラズマの長辺の部分のプラズマ強度よりも大きくなる。   It is known that the plasma intensity of elongated ring-shaped plasma is higher at the end than the straight part, especially when multiple elongated ring-shaped plasmas are arranged in parallel. The plasma intensity at the portion where the plasma ends are aligned is larger than the plasma intensity at the long side portion of the ring-shaped plasma.

並べられた端部のプラズマは基板１６の短辺の近くに薄膜を成長させ、プラズマの長辺部分は基板１６の長辺の近くに薄膜を成長させる場合は、基板１６表面の中央と短辺部分と長辺部分とで薄膜の特性が異なってしまう。   In the case where the plasma at the arranged end portion grows a thin film near the short side of the substrate 16 and the long side portion of the plasma grows a thin film near the long side of the substrate 16, the center and the short side of the surface of the substrate 16 are used. The characteristics of the thin film are different between the portion and the long side portion.

このスパッタリング装置２では、各磁石装置１５1〜１５5の端部が並べられた領域と平行して、アノード電極１７の短辺がそれぞれ配置されており、アノード電極１７の二個の短辺部分の表面上の、基板１６の外周よりも外側であって、ターゲット１３の外周よりも内側の位置に、厚みが一定のブロック電極１８ａ、１８ｂがそれぞれ配置されている。 In this sputtering device 2, the short sides of the anode electrode 17 are arranged in parallel with the region where the end portions of the magnet devices 15 1 to 15 5 are arranged, and the two short side portions of the anode electrode 17 are arranged. Block electrodes 18a and 18b having a constant thickness are disposed on the surface of the substrate 16 at positions outside the outer periphery of the substrate 16 and inside the outer periphery of the target 13, respectively.

各磁石装置１５1〜１５5の外周磁石２５とその内側に位置する内側磁石２６との間の領域をプラズマ領域１０とすると、各磁石装置１５1〜１５5の外周磁石２５の両端は半円形に湾曲され、それに伴ってプラズマ領域１０の両端も半円形に湾曲されて、外周磁石２５とプラズマ領域１０とはそれぞれトラック形形状になっている。 Assuming that the region between the outer magnet 25 of each of the magnet devices 15 1 to 15 5 and the inner magnet 26 positioned inside thereof is the plasma region 10, both ends of the outer magnet 25 of each of the magnet devices 15 1 to 15 5 are semicircular. Accordingly, both ends of the plasma region 10 are also semicircularly curved, and the outer peripheral magnet 25 and the plasma region 10 have a track shape.

各磁石装置１５1〜１５5のプラズマ領域１０の長手方向の長さは等しくされており、各プラズマ領域１０のアノード電極１７に対する距離が等しいものとすると、各プラズマ領域１０の両端の湾曲した部分のうちの一方の端部の湾曲した部分は横一列に並び、反対側の端部の湾曲した部分も横一列に並ぶようにされている。 Assuming that the lengths of the plasma regions 10 in the magnet devices 15 1 to 15 5 in the longitudinal direction are equal to each other, and the distances between the plasma regions 10 and the anode electrode 17 are equal, curved portions at both ends of each plasma region 10. Of these, the curved portions at one end are aligned in a horizontal row, and the curved portions at the opposite end are also aligned in a horizontal row.

各プラズマ領域１０の両端の湾曲した部分のうち、一方の端部であって横一列に並んだ湾曲した部分と基板１６の表面が位置する平面との間には一本のブロック電極１８ａが配置され、反対側の端部であって横一列に並んだ湾曲した部分と基板１６の表面が位置する平面との間には、他の一本のブロック電極１８ｂが配置されている。   One block electrode 18a is arranged between one of the curved portions at both ends of each plasma region 10 and a curved portion arranged in a horizontal row and a plane on which the surface of the substrate 16 is located. The other block electrode 18b is arranged between the curved portion that is the opposite end and arranged in a horizontal row and the plane on which the surface of the substrate 16 is located.

真空槽１１の壁と、アノード電極１７と、ブロック電極１８ａ、１８ｂとはそれぞれ接地電位に接続されており、ターゲット１３の表面は、アノード電極１７の長辺部分上ではアノード電極１７の長辺部分と向き合っており、アノード電極１７の短辺部分上ではブロック電極１８ａ、１８ｂの表面と向き合っている。   The wall of the vacuum chamber 11, the anode electrode 17, and the block electrodes 18 a and 18 b are respectively connected to the ground potential, and the surface of the target 13 is on the long side portion of the anode electrode 17 on the long side portion of the anode electrode 17. It faces the surface of the block electrodes 18a and 18b on the short side portion of the anode electrode 17.

ターゲット１３表面と基板１６表面との間の距離をＴＳ距離、ターゲット１３表面とアノード電極１７の長辺部分との間の距離をＴＡ距離、ターゲット１３表面とブロック電極１８ａ、１８ｂとの間の距離をＴＢ距離とすると、次の三式がなりたつ。   The distance between the target 13 surface and the substrate 16 surface is the TS distance, the distance between the target 13 surface and the long side portion of the anode electrode 17 is the TA distance, and the distance between the target 13 surface and the block electrodes 18a and 18b. Let t be the TB distance.

ＴＡ＜ＴＳ，ＴＢ＜ＴＳ，ＴＢ＜ＴＡ   TA <TS, TB <TS, TB <TA

基板１６の長辺の真横位置ではターゲット１３に最も近い接地電位の部材はアノード電極１７のターゲット１３に対面する表面であり、基板１６の長辺の真横位置ではターゲット１３とターゲット１３に最も近い接地電位の部材の表面との間はＴＡ距離だけ離間されている。   The member having the ground potential closest to the target 13 at the position directly beside the long side of the substrate 16 is the surface facing the target 13 of the anode electrode 17, and the member closest to the target 13 and the target 13 is positioned beside the long side of the substrate 16. The surface of the potential member is separated by a TA distance.

基板１６の短辺の真横位置ではターゲット１３に最も近い接地電位の部材はブロック電極１８ａ、１８ｂのターゲット１３に対面する表面であり、基板１６の短辺の真横位置ではターゲット１３とターゲット１３に最も近い接地電位の部材の表面との間はＴＢ距離だけ離間されている。   The member having the ground potential closest to the target 13 at the position just beside the short side of the substrate 16 is the surface facing the target 13 of the block electrodes 18a and 18b, and is most close to the target 13 and the target 13 at the position beside the short side of the substrate 16. It is separated by a TB distance from the surface of a member having a close ground potential.

従って、ターゲット１３とターゲット１３に最も近い接地電位の部材の表面との間の距離は、基板１６の長辺の真横位置よりも短辺の真横位置の方が短くなる。   Accordingly, the distance between the target 13 and the surface of the member having the ground potential closest to the target 13 is shorter at the short lateral position than at the long lateral position of the substrate 16.

ブロック電極１８ａ、１８ｂにより、基板１６の外周よりも外側の位置で接地電位との距離が短くなり、基板１６の外周よりも内側のプラズマを引きつけて、基板１６の外側でブロック電極１８ａ、１８ｂが位置する部分のプラズマ強度が大きくなる。その結果、基板１６上のプラズマ領域１０の両端に近い部分のプラズマ強度は小さくなる。要するにブロック電極１８ａ、１８ｂにより、基板１６上のプラズマ領域１０の両端に近い部分のプラズマ強度が小さくなり基板１６上のプラズマ強度が均一化されるから、形成される薄膜の特性分布が均一化される。   The block electrodes 18a and 18b shorten the distance to the ground potential at a position outside the outer periphery of the substrate 16 and attract plasma inside the outer periphery of the substrate 16 so that the block electrodes 18a and 18b are formed outside the substrate 16. The plasma intensity in the position is increased. As a result, the plasma intensity in the portion near both ends of the plasma region 10 on the substrate 16 is reduced. In short, because of the block electrodes 18a and 18b, the plasma intensity on the portion near the both ends of the plasma region 10 on the substrate 16 is reduced and the plasma intensity on the substrate 16 is made uniform, so that the characteristic distribution of the formed thin film is made uniform. The

ＴＢ距離は、ターゲット１３の表面と基板配置部１４に配置された基板１６の表面との間のＴＳ距離の１０％より大きくしないと却って特性分布が悪化し、９０％より小さくしないと効果が薄い。   If the TB distance is not greater than 10% of the TS distance between the surface of the target 13 and the surface of the substrate 16 disposed on the substrate placement portion 14, the characteristic distribution is deteriorated. If the TB distance is not smaller than 90%, the effect is small. .

図５は、ターゲット１３に平板状の金属モリブデンターゲットを用い、電極として使用されるモリブデン薄膜を形成した場合のシート抵抗Ｒｓの分布を示すグラフであり、横軸がシート抵抗Ｒｓ、縦軸が基板１６上で長辺方向の位置（図２の上端がゼロ点であり、縦軸の上端と下端に基板の短辺が位置する。）である。   FIG. 5 is a graph showing the distribution of sheet resistance Rs when a flat metal molybdenum target is used as the target 13 and a molybdenum thin film used as an electrode is formed. The horizontal axis is the sheet resistance Rs, and the vertical axis is the substrate. 16 is a position in the long side direction (the upper end in FIG. 2 is the zero point, and the short side of the substrate is positioned at the upper end and the lower end of the vertical axis).

ブロック電極１８ａ、１８ｂが設けられていない場合のモリブデン薄膜のシート抵抗Ｒｓの曲線ａは、シート抵抗の最大値と最小値の差が大きいのに対し、このスパッタリング装置２（ブロック電極１８ａ、１８ｂが設けられた場合）の曲線ｂはシート抵抗の最大値と最小値の差が小さくなっている。   The curve a of the sheet resistance Rs of the molybdenum thin film when the block electrodes 18a and 18b are not provided has a large difference between the maximum value and the minimum value of the sheet resistance, whereas the sputtering apparatus 2 (the block electrodes 18a and 18b In the case of a curve b), the difference between the maximum value and the minimum value of the sheet resistance is small.

プラズマ領域１０の両端である湾曲した部分の上にブロック電極１８ａ、１８ｂが設けられ、ブロック電極１８ａ、１８ｂ上でターゲット１３と接地電位との間の距離が短くなっていることにより、ブロック電極１８ａ、１８ｂ上のプラズマ強度が増大する。ブロック電極１８ａ、１８ｂは基板１６よりも外側に配置されており、基板１６の外側のプラズマ強度が増大した結果、ブロック電極１８ａ、１８ｂが近接する基板１６の縁付近の基板１６上ではプラズマ強度が減少するため、基板１６上のプラズマ強度が均一化され、基板１６の表面内の抵抗値分布が均一になっている。   Block electrodes 18a and 18b are provided on the curved portions at both ends of the plasma region 10, and the distance between the target 13 and the ground potential is shortened on the block electrodes 18a and 18b. , 18b increases the plasma intensity. The block electrodes 18a and 18b are arranged outside the substrate 16, and as a result of an increase in plasma intensity outside the substrate 16, the plasma intensity is increased on the substrate 16 near the edge of the substrate 16 close to the block electrodes 18a and 18b. Therefore, the plasma intensity on the substrate 16 is made uniform, and the resistance value distribution in the surface of the substrate 16 is made uniform.

プラズマ領域１０は、無端状、リング形形状であればよく、外周磁石２５の両端が方形である場合や楕円形である場合も本発明に含まれる。
また、各磁石装置１５1〜１５5の端部を同一直線上に配置しない場合や、各磁石装置１５1〜１５5の端部とカソード電極１２との距離を一定にしない場合も本発明に含まれる。 The plasma region 10 may be endless and ring-shaped, and the case where both ends of the outer peripheral magnet 25 are square or elliptical is also included in the present invention.
The present invention also applies to the case where the end portions of the magnet devices 15 1 to 15 5 are not arranged on the same straight line, or the distance between the end portions of the magnet devices 15 1 to 15 5 and the cathode electrode 12 is not constant. included.

なお、上記ブロック電極１８ａ、１８ｂは、アノード電極１７の辺上に位置し、基板１６の辺よりも外側であって、ターゲット１３の辺よりも内側に位置している。   The block electrodes 18 a and 18 b are located on the side of the anode electrode 17, outside the side of the substrate 16 and inside the side of the target 13.

二個のブロック電極１８ａ、１８ｂはそれぞれ直線形形状であり、プラズマ領域１０の両端のうち、プラズマ領域１０の一方の端部の一列に並んだ湾曲した部分と基板１６の表面が位置する平面との間に一個のブロック電極１８ａが配置され、プラズマ領域１０の反対側の端部の一列に並んだ湾曲した部分と基板１６の表面が位置する平面との間に他の一個のブロック電極１８ｂが配置されており、プラズマ領域１０の湾曲した部分の一部と基板１６の表面が位置する平面との間にブロック電極１８ａ、１８ｂが位置している。   Each of the two block electrodes 18a and 18b has a linear shape, and of both ends of the plasma region 10, a curved portion arranged in a line on one end of the plasma region 10 and a plane on which the surface of the substrate 16 is located. A single block electrode 18a is arranged between the curved portion arranged in a line on the opposite end of the plasma region 10 and a plane on which the surface of the substrate 16 is located. The block electrodes 18 a and 18 b are located between a part of the curved portion of the plasma region 10 and a plane on which the surface of the substrate 16 is located.

また、ブロック電極１８ａ、１８ｂは一部分がプラズマ領域１０の湾曲した部分の外側にはみ出していてもよいし、内側にはみ出していてもよい。更にまた、両方からはみ出していてもよい。   Further, part of the block electrodes 18 a and 18 b may protrude outside the curved portion of the plasma region 10 or may protrude outside. Furthermore, you may protrude from both.

なお、上記ターゲット１３は金属モリブデンであったが、本発明は金属モリブデンに限定されるものではなく、本発明のスパッタリング装置２は、金属チタン、モリブデン合金、アルミニウム、アルミニウム合金、金属タングステン、純銅、銅合金、タンタル等の金属から成るターゲット１３に対して本発明の効果を奏することができる。   In addition, although the said target 13 was metal molybdenum, this invention is not limited to metal molybdenum, Sputtering apparatus 2 of this invention is metal titanium, molybdenum alloy, aluminum, aluminum alloy, metal tungsten, pure copper, The effect of the present invention can be exerted on the target 13 made of a metal such as copper alloy or tantalum.

２……スパッタリング装置
１０……プラズマ領域
１１……真空槽
１３……ターゲット
１４……基板配置部
１５1〜１５5……磁石装置
１６……基板
１７……アノード電極
１８ａ、１８ｂ……ブロック電極
２２……スパッタ電源
2 ... Sputtering device 10 ... Plasma region 11 ... Vacuum chamber 13 ... Target 14 ... Substrate placement portion 15 1 to 15 5 ... Magnet device 16 ... Substrate 17 ... Anode electrodes 18a, 18b ... Block electrodes 22 …… Sputtering power supply

Claims (3)

真空槽と、
前記真空槽の内部に配置されたターゲットと、
前記ターゲットの裏面側に配置されスパッタ電源に接続されるカソード電極と、
前記カソード電極の裏面側に配置された複数の磁石装置と、
基板が配置される基板配置部と、
接地電位に接続され前記基板の外周上を覆うリング形形状のアノード電極と、
を有し、
各前記磁石装置には細長のリング形形状の外周磁石とその内側に配置された内側磁石とが設けられ、
前記ターゲットの表面には前記外周磁石とその内側の前記内側磁石との間で形成される磁束が漏洩され、前記ターゲットがスパッタリングされて前記基板表面に薄膜が形成されるスパッタリング装置であって、
前記外周磁石とその内側の前記内側磁石とは離間され、前記外周磁石とその内側の前記内側磁石との間の領域であるプラズマ領域は細長のリング形形状にされ、
前記プラズマ領域の両端と前記基板の表面が位置する平面との間には、前記アノード電極よりも厚みが厚く接地電位に接続されたブロック電極が配置され、
前記アノード電極の表面と前記ターゲットの表面との間のＴＡ距離よりも、前記ブロック電極の表面と前記ターゲットの表面との間のＴＢ距離の方が短くされたスパッタリング装置。 A vacuum chamber;
A target disposed inside the vacuum chamber;
A cathode electrode disposed on the back side of the target and connected to a sputtering power source;
A plurality of magnet devices disposed on the back side of the cathode electrode;
A substrate placement section on which the substrate is placed;
A ring-shaped anode electrode connected to the ground potential and covering the outer periphery of the substrate;
Have
Each of the magnet devices is provided with an elongated ring-shaped outer peripheral magnet and an inner magnet disposed on the inner side thereof,
A sputtering apparatus in which a magnetic flux formed between the outer peripheral magnet and the inner magnet inside thereof is leaked to the surface of the target, and the target is sputtered to form a thin film on the substrate surface,
The outer peripheral magnet and the inner magnet inside thereof are separated from each other, and a plasma region which is a region between the outer peripheral magnet and the inner magnet inside thereof is formed into an elongated ring shape,
Between the both ends of the plasma region and the plane on which the surface of the substrate is located, a block electrode having a thickness thicker than the anode electrode and connected to a ground potential is disposed,
The sputtering apparatus in which the TB distance between the surface of the block electrode and the surface of the target is shorter than the TA distance between the surface of the anode electrode and the surface of the target. 前記ＴＢ距離は、前記ターゲットの表面と前記基板配置部に配置された前記基板の表面との間のＴＳ距離の１０％より大きく、９０％より小さくされた請求項１記載のスパッタリング装置。   The sputtering apparatus according to claim 1, wherein the TB distance is greater than 10% and less than 90% of a TS distance between a surface of the target and a surface of the substrate disposed on the substrate placement unit. 前記ターゲットは平板状の金属モリブデン板であり、前記薄膜は金属モリブデン薄膜である請求項１又は請求項２のいずれか１項記載のスパッタリング装置。   The sputtering apparatus according to claim 1, wherein the target is a flat metal molybdenum plate, and the thin film is a metal molybdenum thin film.
JP2018071518A 2018-04-03 2018-04-03 Sputtering apparatus Pending JP2019183192A (en)

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