JP2019181689A - Polishing device and substrate processing device - Google Patents

Abstract

To provide a polishing device which enables a liquid including polishing debris existing on a polishing table on which substrates, such as silicon wafers, are polished and a gas-liquid mixture for cleaning to be actively discharged, and to provide a substrate processing device.SOLUTION: A polishing device adopts a structure having: a polishing table 1 which receives a liquid supplied to an upper surface and rotates around a center axis L; an annular abrasive fluid receiver 30 (a gutter 31) disposed below a peripheral edge part of the polishing table 1; and a cylindrical flinger 11 which is attached to a peripheral edge part of the polishing table 1 and in which a lower end part extends toward the abrasive fluid receiver 30.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a polishing apparatus and a substrate processing apparatus.

  Conventionally, a CPM (Chemical Mechanical Polishing) apparatus is known as one of substrate processing apparatuses for processing a substrate such as a silicon wafer. The substrate processing apparatus includes a polishing unit (polishing device) that polishes a substrate and a cleaning unit that cleans the substrate. As shown in Patent Document 1, the polishing apparatus includes a polishing table and a polishing head also called a top ring. A polishing pad is attached to the upper surface of the polishing table that rotates.

In such a polishing apparatus, a polishing liquid (liquid) containing abrasive grains such as silica (SiO ₂ ) and ceria (CeO ₂ ) from a polishing liquid nozzle on a rotating polishing table with a polishing pad attached thereto. ) And the substrate held on the lower surface of the polishing head is pressed while rotating on the polishing table (polishing pad). By this pressing, the substrate surface in contact with the polishing pad surface is generated on a desired flat surface by both rotation of the polishing table and the polishing head in the presence of the abrasive liquid.

  The substrate generated on the desired flat surface is transported to the cleaning unit and cleaned. A gas mixture containing an inert gas such as nitrogen gas is supplied from the atomizer nozzle to the upper surface of the polishing pad after the substrate is transferred. Thereby, the polishing pad surface is cleaned and used for polishing the next substrate. In such a polishing process, the polishing liquid supplied from the polishing liquid nozzle, the gas mixture supplied from the atomizer nozzle, and polishing waste generated by polishing exist on the polishing table. In order to process the liquid containing the polishing debris, the polishing apparatus is provided with a drainage exhaust structure.

  The drainage / exhaust structure provided in the polishing apparatus of Patent Document 1 includes an abrasive liquid receiving pan (liquid receiving member) and a gas-liquid separator. The abrasive liquid receiving pan is provided near the outer periphery of the polishing table, and is configured to receive the liquid falling by the rotation of the polishing table. Further, the gas-liquid separator is configured so that the gas-liquid can be separated while introducing the liquid received in the abrasive liquid receiving pan and dropping the introduced liquid.

JP 2017-18930 A

  However, the conventional drainage / exhaust structure is provided with a polishing liquid receiving pan near the outer periphery of the polishing table so that the abrasive liquid receiving pan can simply receive liquid containing polishing debris that is moved and dropped by the rotation of the polishing table. It is configured. For this reason, it has been desired that the liquid can be more positively discharged from the polishing table to the abrasive liquid receiving pan. If the liquid can be more actively discharged from the polishing table, mist and the like existing around the polishing table can be discharged quickly, and the clean state around the polishing table can be improved.

  The present invention has been made in response to the above-mentioned demands, and an object of the present invention is to provide a polishing apparatus capable of positively discharging the liquid existing on the polishing table and a substrate processing apparatus including the polishing apparatus. It is in.

  (1) A polishing apparatus according to an aspect of the present invention includes a polishing table that is supplied with liquid on an upper surface and rotates about a central axis, and an annular liquid receiving member that is disposed below a peripheral edge of the polishing table; A cylindrical draining member attached to the peripheral edge of the polishing table and having a lower end extending toward the liquid receiving member.

(2) The polishing apparatus according to (1), wherein the liquid receiving member has an inner peripheral wall disposed radially inward of a lower end portion of the draining member, and a lower end portion of the draining member May extend below the upper end of the inner peripheral wall.
(3) In the polishing apparatus described in the above (1) or (2), a step for attaching the draining member is formed on a peripheral portion of the polishing table, and the draining member is inserted through a bolt. A first seal member attached to the bottom surface of the step and sealing a radial gap between the draining member and the side surface of the step; a second seal member sealing the insertion hole of the draining member through which the bolt is inserted; You may have.
(4) The polishing apparatus according to any one of (1) to (3), wherein the polishing apparatus is disposed radially outward from the draining member and is radially with the draining member toward the upper surface of the polishing table. And a gas-liquid separation device that sucks gas through the liquid receiving member and separates the liquid contained in the gas, and the gas-liquid separation device includes: A gap formed between the draining member and the cover member may be used as the suction path.
(5) The polishing apparatus according to (4), wherein the cover member is disposed with a gap from an outer peripheral wall of the liquid receiving member, and a gap dimension between the cover member and the outer peripheral wall. May be smaller than the gap size between the cover member and the upper end of the draining member.
(6) In the polishing apparatus described in (4) or (5) above, the cover may be movable in the vertical direction.

  (7) The substrate processing apparatus which concerns on 1 aspect of this invention is a substrate processing apparatus which has the grinding | polishing part which grind | polishes a board | substrate, and the washing | cleaning part which wash | cleans the said board | substrate grind | polished by the said grinding | polishing part, Comprising: The said grinding | polishing part Includes the polishing apparatus according to the above (1) to (6).

  According to the above aspect of the present invention, since the cylindrical draining member whose lower end extends toward the liquid receiving member is provided at the peripheral edge of the polishing table, the liquid can be efficiently discharged from the upper surface of the polishing table. It can be guided to the receiving member, and the clean state around the polishing table can be improved.

It is a lineblock diagram of the polish table with which the polish device concerning one embodiment is provided, and its peripheral structure. It is an enlarged view of the A section of FIG. It is a perspective view of the abrasive liquid receiver with which the polisher concerning one embodiment is provided. It is sectional drawing of the gas-liquid separation apparatus with which the grinding | polishing apparatus which concerns on one Embodiment is provided. It is a top view showing the whole substrate processing device composition concerning one embodiment.

  Hereinafter, a polishing apparatus and a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. The following embodiments are described by way of example in order to better understand the gist of the invention, and do not limit the present invention unless otherwise specified. In addition, in the drawings used in the following description, in order to make the features of the present invention easier to understand, the main part may be enlarged for convenience, and the dimensional ratios of the respective components are the same as the actual ones. Not necessarily. In addition, in order to make the features of the present invention easier to understand, some parts are omitted for convenience.

(Polishing equipment)
FIG. 1 is a configuration diagram of a polishing table 1 and its peripheral structure provided in a polishing apparatus according to an embodiment. FIG. 2 is an enlarged view of a portion A in FIG.
This polishing apparatus is incorporated in a part of a substrate processing apparatus (described later) for processing a semiconductor substrate such as a silicon wafer. This polishing apparatus includes a polishing table 1 and a top ring, but only the portion of the polishing table 1 is shown here.
In the following description, the polishing table 1 and its peripheral structure (drainage exhaust structure 10) of the polishing apparatus, which is the main part of the present invention, will be described before the description of the substrate processing apparatus.

  The polishing table 1 shown in FIG. 1 has a top surface formed in a circular shape and rotates around a central axis L passing through the center of the circular shape. The polishing table 1 includes a table 2 positioned on the upper surface side, and a table base 3 on which the table 2 is stacked. A polishing pad is affixed to the upper surface of the table 2, but is omitted here. In the polishing pad, an opening corresponding to a sensor hole 2g provided in the table 2 described later is formed.

  The material of the table 2 is selected based on thermal conductivity, ease of processing, and the like, and is made of, for example, stainless steel, ceramics, or aluminum alloy. The table 2 is formed by vertically joining a first table portion 2a located on the upper side and a second table portion 2b located on the lower side of the first table portion 2a.

A heat medium flow path 4 is formed in the second table portion 2b. The heat medium channel 4 is a groove formed on the upper surface of the second table portion 2b so as to substantially cover the entire upper surface.
The first table portion 2 a is a plate body (lid body) that is joined to the upper surface of the second table portion 2 b and closes the upper surface opening of the groove groove of the heat medium flow path 4. A heat medium (temperature-controlled water or the like) is supplied to the heat medium flow path 4 via a shaft 9 from a rotary joint 9a described later.

  On the upper surface side of the peripheral edge of the table 2, a step 2c is provided. The depth of the step 2c is the thickness of the flinger 11 (draining member) which is one of the constituent members of the drainage exhaust structure 10, and the head of the bolt 2d for attaching the flinger 11 and the table 2 to the table base 3. The total height of the parts is determined to be lower than the position of the upper surface of the first table part 2a.

  As shown in FIG. 2, a seal washer 2 d 1 (second seal member) is sandwiched between the head of the bolt 2 d and the flinger 11. The seal washer 2d1 prevents liquid on the table 2 from entering the table base 3 through the insertion hole of the flinger 11 through which the bolt 2d is inserted.

  The side surface of the step 2c provided on the table 2 is provided with a concave groove recessed inward in the radial direction, and an O-ring 2e (first seal member) is disposed in the concave groove. The O-ring 2e contacts the inner end surface of the flinger 11 attached to the step 2c. The O-ring 2e seals the radial gap between the flinger 11 and the side surface of the step 2c, and prevents liquid on the table 2 from entering the table base 3 through the gap.

  Returning to FIG. 1, one or a plurality of knock pin holes 2 f are provided on the lower surface of the table 2 at predetermined intervals. In FIG. 1, only one knock pin hole 2f is shown among a plurality (for example, three) of knock pin holes 2f. The installation location of the knock pin hole 2f corresponds to a knock pin 3b provided in the table base 3 described later. The table 2 is provided with a sensor hole 2g penetrating in the vertical direction at a position away from the central axis L in the radial direction.

  The table base 3 is made of a material having sufficient rigidity, for example, an aluminum alloy, and the upper surface thereof, that is, the surface in contact with the bottom surface of the table 2 is formed in the same circular shape as the table 2. Moreover, when this table base 3 is seen from the front side, it forms an inverted trapezoid. A draining protrusion 3a protruding downward is integrally formed on the bottom surface side of the table base 3 and radially inward from the fastening position of the bolt 2d.

  One or a plurality of knock pins 3b are planted on the upper surface of the table base 3 so as to protrude toward the table 2 at a predetermined interval. FIG. 1 shows only one knock pin 3b among a plurality (for example, three) of knock pins 3b. These knock pins 3b are provided facing the knock pin holes 2f provided in the table 2 described above. The table 2 and the table base 3 are positioned by inserting the knock pin 3b into the knock pin hole 2f, and are fastened together by the bolt 2d together with the flinger 11 so as to be rotatable around the central axis L. Yes.

  The table base 3 is provided with a sensor mounting portion 3c. The sensor mounting portion 3c is provided at a position facing the sensor hole 2g provided in the table 2 when the knock pin 3b of the table base 3 is inserted into the knock pin hole 2f of the table 2 and both are positioned and stacked. It has been. A wafer film detector 5 for detecting a flat surface of a substrate (not shown) to be polished by the polishing table 1 is mounted on the sensor mounting portion 3c.

  A flange 6 is connected to the central portion of the bottom surface of the table base 3. The flange 6 consists of a cylindrical body, and the upper end part is being fixed to the table base 3 using the volt | bolt 6a. The length of the flange 6 in the axial direction is determined to be a length extending below the lower end position of the wafer film detector 5 attached to the table base 3. Therefore, the flange 6 also has a role of securing a space for installing the wafer film detector 5 on the table base 3.

  A motor 7 is connected to the lower end of the flange 6. The motor 7 has a hollow motor rotation shaft 7a, and the upper end portion of the motor rotation shaft 7a is fixed to the lower end portion of the flange 6 using bolts 6b. The motor casing 7b of the motor 7 is fixed to the frame 8 on the fixed side of the polishing apparatus. That is, the polishing table 1 is supported on the frame 8 via the motor 7 and the flange 6. The polishing table 1 can rotate about the central axis L when the motor 7 is driven to rotate.

  Connected to the center of the bottom surface of the polishing table 1 is an upper end of a shaft 9 that passes through a hollow motor rotating shaft 7 a of the motor 7. The lower end portion of the shaft 9 is connected to the rotary joint rotating shaft 9d of the rotary joint 9a via a cooling water flange 9e fixed to the lower end portion of the motor rotating shaft 7a. Therefore, the shaft 9 above the rotary joint 9 a can rotate together with the table 2.

  A heat medium supply pipe 9b that supplies a heat medium to the shaft 9 side and a heat medium return pipe 9c that returns the heat medium discharged from the shaft 9 side are connected to the rotary joint 9a. In addition, although not shown, the shaft 9 discharges the heat medium supplied to the shaft 9 to one end of the heat medium flow path 4 in the table 2 and the other end of the heat medium flow path 4. A pipe line for returning the heat medium to the rotary joint 9a side is formed.

  Therefore, when a heat medium is supplied to the heat medium supply pipe 9b of the rotary joint 9a, the supplied heat medium passes through the heat medium flow path 4 in the table 2 and again enters the heat medium return pipe 9c of the rotary joint 9a. Come back. Thus, by supplying the heat medium through the rotary joint 9a, the upper surface of the table 2 can be adjusted to a desired temperature even when the table 2 is rotating.

Next, the drainage / exhaust structure 10 will be described with reference to FIGS.
As shown in FIG. 2, the drainage / exhaust structure 10 includes a flinger 11 (drainage member), a cover 20 (cover member), an abrasive liquid receiver 30 (liquid receiver member), and a gas-liquid separator 40 (see FIG. 1). It consists of and.

  As described above, the flinger 11 is provided at the step 2 c of the table 2, and the entire shape thereof is formed in a cylindrical shape that can cover the entire side surface of the table 2. And the longitudinal cross-sectional shape of the flinger 11 is the form which reversed the L-shaped top and bottom, and the bent part of the upper part of the form is attached to the level | step difference 2c of the table 2. As shown in FIG. Further, the length of the portion vertically lowered from the bent portion is determined so as to extend below the lower end position of the draining protrusion 3 a provided on the table base 3.

  The cover 20 is provided on the fixed frame side of a polishing apparatus (not shown), and the entire shape thereof is formed in a cylindrical shape that can cover the entire side surface of the flinger 11 at a position radially outward from the flinger 11. . The cover 20 is formed such that the radial gap with the flinger 11 gradually decreases toward the upper surface of the polishing table 1. Specifically, when the gap dimension on the upper surface of the polishing table 1 is S1 and the gap dimension at the lower end of the flinger 11 is S2, the relationship of S1 <S2 is established.

  That is, the cover 20 is located a predetermined distance away from the flinger 11 radially outward, and the inner peripheral side thereof is inclined (reduced diameter) so as to be slightly inclined toward the cylindrical central side. Further, the length of the cylindrical cover 20 in the axial direction is sufficiently longer than the length of the portion of the flinger 11 that is vertically lowered from the bent portion. Therefore, the gap formed between the flinger 11 and the cover 20 forms a kind of orifice structure that becomes narrower as it goes upward.

  The cover 20 is movable in the vertical direction (axial direction) as indicated by a two-dot chain line. This vertical movement is performed by an actuator provided on the fixed frame side of the polishing apparatus (not shown), but can also be performed manually. The solid line in FIG. 2 shows a state in which the cover 20 has moved upward, and is in a state where the abrasive liquid and gas mixture discharged from the upper surface side of the table 2 can be received. On the other hand, the two-dot chain line in FIG. 2 shows a state where the cover 20 has moved downward. The downward movement of the cover 20 is performed at the time of exchanging the polishing pad affixed to the table 2, maintenance work for the polishing head and the table 2, which is also called a top ring, or the like.

The abrasive liquid receiver 30 is provided on the fixed frame side of a polishing apparatus (not shown), and has a flange 31 (see FIG. 3) whose upper part opens in an annular shape. As shown in FIG. 2, the outer peripheral wall 31 a on the outer side in the radial direction of the flange 31 is arranged on the outer side in the radial direction with respect to the lower end portion of the cover 20, and the lower end of the cover 20 even when the cover 20 moves up and down. It can be overlapped with the part. In addition, when the clearance dimension between the cover 20 and the outer peripheral wall 31a when the cover 20 moves upward is S3, there is a relationship of S3 <S1 <S2. S3 should be sufficiently small. Thereby, inflow of the outside air to the inner side of the basket 31 is suppressed, and the suction efficiency of the gas-liquid separation device 40 described later is improved.
Further, when an exhaust processing device (suction device) (not shown) connected to an exhaust pipe 45 to be described later is included, when S3 is small, the air on the motor side is taken in rather than the outside air is taken in. As a result, the polishing liquid flows down almost directly as shown by the arrow, so that it becomes difficult for the polishing liquid to enter the motor side, and further, it becomes difficult for the polishing liquid to enter the gaps where the members are fastened.

  On the other hand, the inner peripheral wall 31 b on the radially inner side of the flange 31 is disposed on the radially inner side with respect to the lower end portion of the flinger 11. The lower end portion of the flinger 11 extends below the upper end portion of the inner peripheral wall 31b, and both overlap. Therefore, a kind of labyrinth structure can be formed by the flinger 11 and the inner peripheral wall 31 b of the abrasive liquid receiver 30. Thereby, it is possible to prevent the gas and liquid from entering the radially inner side of the inner peripheral wall 31 b of the abrasive liquid receiver 30, that is, the bottom surface side of the table base 3.

  As shown in FIG. 3, a drainage basin 32 is provided in a part of the basin 31 so that a liquid such as an abrasive liquid in the basin 31 can be collected. And the liquid collected here is comprised so that it can guide to the gas-liquid separation apparatus 40 through the discharge pipe 33 provided in the bottom wall of the drainage tub 32. FIG. The upper opening of the drainage tub 32 is closed by a lid member 32a. The lid member 32 a includes a mounting pin (not shown) that is inserted into a mounting hole 32 b provided in the drainage basin 32.

  As shown in FIG. 4, the gas-liquid separation device 40 has a space of a predetermined capacity inside, and a gas-liquid separation cylinder 41 is built in the space. The gas-liquid separation cylinder 41 is attached so that the upper part surrounds the periphery of the opening of the discharge pipe 33 connected to the abrasive liquid receiver 30, and an inclined collision plate 42 is attached to a portion facing the opening. It has been. Further, an opening 43 is provided at a location of the gas-liquid separation cylinder 41 facing the collision plate 42.

  The collision plate 42 is divided into an upper collision plate 42a and a lower collision plate 42b. Among these, the upper collision plate 42a is fixed at the upper end side to the inner wall side of the gas-liquid separator 40, and the lower collision plate 42b is slidably attached to the lower side of the upper collision plate 42a. Therefore, the collision plate 42 can adjust the length with which the gas-liquid mixture discharged from the discharge pipe 33 of the abrasive liquid receiver 30 hits the collision plate 42.

The gas-liquid separator 40 is provided with a drain pipe 44 and an exhaust pipe 45. Among these, the drainage pipe 44 is provided in the bottom part of the gas-liquid separation apparatus 40, and is comprised so that the liquid isolate | separated by the gas-liquid separation apparatus 40 can be discharged | emitted to the drainage processing apparatus which is not shown in figure. Further, the exhaust pipe 45 is provided in the upper part of the gas-liquid separation device 40 and on the side opposite to the side where the opening 43 of the gas-liquid separation cylinder 41 is provided. Therefore, since the position of the exhaust pipe 45 is the longest distance from the position of the opening 43, the liquid accompanying the airflow flowing through the exhaust pipe 45 can be reduced.
The exhaust pipe 45 is connected to an exhaust processing device (suction device) (not shown).

  When polishing a substrate such as a silicon wafer with the polishing table 1 having the above structure, a polishing pad is attached to the upper surface of the table 2. A substrate is attached to the lower surface of the top ring (polishing head). When the motor 7 is rotationally driven, the table 2 on which the polishing pad is attached rotates through the flange 6 and the table base 3.

A polishing liquid containing abrasive grains such as silica (SiO ₂ ) and ceria (CeO ₂ ) is supplied from a polishing liquid nozzle (not shown) onto the polishing pad, and the upper surface of the polishing pad to which the polishing liquid is supplied Then, the substrate held on the lower surface of the top ring is pressed while rotating. By this pressing, the substrate surface in contact with the polishing pad surface is generated on a desired flat surface by both rotation of the polishing table 1 and the polishing head in the presence of the abrasive liquid.

  When the wafer film detector 5 detects that the polished surface of the substrate has been formed into a desired flat surface, that is, a desired film thickness, the substrate is transferred to a cleaning device of the next substrate processing apparatus and subjected to a cleaning process. The A gas mixture containing an inert gas such as nitrogen gas is supplied from an atomizer nozzle (not shown) onto the rotating polishing pad after the substrate is transferred. Thereby, the upper surface of the polishing pad is cleaned and used for polishing the next substrate to be polished.

  As described above, the polishing liquid is supplied from the polishing liquid nozzle to the upper surface of the table 2 that is rotated by attaching the polishing pad, and the gas mixture is supplied from the atomizer nozzle. Is discharged from the abrasive liquid, the abrasive liquid containing polishing scraps, the gas mixed liquid or the gas mixed liquid including polishing scraps, or the mist of these liquids. In the present invention, the term “liquid” simply includes various types discharged from the upper surface of the polishing table 1.

  As shown by arrows in FIG. 2, a part of the liquid discharged from the upper surface of the table 2 of the polishing table 1 falls along the outer peripheral surface of the flinger 11, and a part is received by the inner wall surface of the cover 20. After that, it falls along the inner wall surface and is received by the abrasive liquid receiver 30. Further, the gas-liquid separation device 40 uses a gap formed between the flinger 11 and the cover 20 as a suction flow path, and the gap forms a kind of orifice structure. Is generated). Therefore, the liquid that is about to be discharged from the upper surface of the table 2 can move quickly and efficiently to the abrasive liquid receiver 30 through the orifice structure. Thereby, the clean state around the polishing table 1 can be further improved. In addition, in order to move the liquid in the flinger 11 and the cover 20 more smoothly, it is preferable to make these materials or surfaces rich in hydrophilicity and water repellency.

  Further, since the flinger 11 and the inner peripheral wall 31b of the abrasive liquid receiver 30 form a kind of labyrinth structure, it is possible to prevent gas and liquid from flowing into the bottom surface side of the table base 3. Therefore, it is possible to prevent the wafer film detector 5 and the motor 7 disposed on the bottom surface side of the table base 3 from being wetted. Further, a draining projection 3a protruding downward is integrally provided near the outer periphery of the bottom surface of the table base 3, so that the liquid moving to the center of the table base 3 is effectively prevented. be able to.

(Substrate processing equipment)
Next, the substrate processing apparatus 100 including the polishing apparatus having the above configuration will be described.

FIG. 5 is a plan view showing the overall configuration of the substrate processing apparatus 100 according to an embodiment.
A substrate processing apparatus 100 shown in FIG. 5 is a chemical mechanical polishing (CMP) apparatus that flatly polishes the surface of a substrate W such as a silicon wafer. The substrate processing apparatus 100 includes a rectangular box-shaped housing 102. The housing 102 is formed in a substantially rectangular shape in plan view.

The housing 102 includes a substrate transfer path 103 extending in the longitudinal direction at the center thereof. A load / unload unit 110 is disposed at one end of the substrate transport path 103 in the longitudinal direction.
A polishing unit 120 is disposed on one side of the width direction of the substrate transport path 103 (a direction orthogonal to the longitudinal direction in plan view), and a cleaning unit 130 is disposed on the other side. The substrate transport path 103 is provided with a substrate transport unit 140 that transports the substrate W. The substrate processing apparatus 100 also includes a control unit 150 (control panel) that controls operations of the load / unload unit 110, the polishing unit 120, the cleaning unit 130, and the substrate transport unit 140.

The load / unload unit 110 includes a front load unit 111 that accommodates the substrate W.
A plurality of front load portions 111 are provided on one side surface of the housing 102 in the longitudinal direction. The plurality of front load portions 111 are arranged in the width direction of the housing 102. The front load unit 111 is equipped with, for example, an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod). SMIF and FOUP are sealed containers in which a cassette of the substrate W is housed and covered with a partition wall, and can maintain an environment independent of the external space.

  In addition, the load / unload unit 110 includes two transfer robots 112 that take in and out the substrates W from the front load unit 111, and a travel mechanism 113 that causes the transfer robots 112 to travel along the front load unit 111. . Each transfer robot 112 has two hands on the upper and lower sides, and is used properly before and after the processing of the substrate W. For example, when the substrate W is returned to the front load unit 111, the upper hand is used, and when the unprocessed substrate W is taken out from the front load unit 111, the lower hand is used.

  The polishing unit 120 includes a plurality of polishing units 121 (121A, 121B, 121C, 121D) that polish (planarize) the substrate W. The plurality of polishing units 121 are arranged in the longitudinal direction of the substrate transport path 103. The polishing unit 121 includes a polishing table 123 that rotates a polishing pad 122 having a polishing surface, a top ring 124 that holds the substrate W and polishes the substrate W while pressing the substrate W against the polishing pad 122 on the polishing table 123, A polishing liquid supply nozzle 125 for supplying a polishing liquid or a dressing liquid (for example, pure water) to the polishing pad 122, a dresser 126 for dressing the polishing surface of the polishing pad 122, and a liquid (for example, pure water) An atomizer 127 that mists a mixed fluid of gas (for example, nitrogen gas) or a liquid (for example, pure water) and sprays it on the polishing surface.

  The polishing unit 121 presses the substrate W against the polishing pad 122 by the top ring 124 while supplying the polishing liquid onto the polishing pad 122 from the polishing liquid supply nozzle 125, and further moves the top ring 124 and the polishing table 123 relative to each other. Thus, the substrate W is polished to flatten the surface. In the dresser 126, hard particles such as diamond particles and ceramic particles are fixed to the rotating portion at the tip that comes into contact with the polishing pad 122, and the entire rotating surface of the polishing pad 122 is swung while rotating the rotating portion. Dress uniformly and form a flat polished surface. The atomizer 127 cleans the polishing surface and sharpens the polishing surface by the dresser 126 which is mechanical contact, that is, polishing, by washing away polishing debris and abrasive grains remaining on the polishing surface of the polishing pad 122 with a high-pressure fluid. Achieve surface regeneration.

  The cleaning unit 130 includes a plurality of cleaning units 131 (131A, 131B) for cleaning the substrate W, and a drying unit 132 for drying the cleaned substrate W. A plurality of cleaning units 131 and drying units 132 (a plurality of processing units) are arranged in the longitudinal direction of the substrate transport path 103. A first transfer chamber 133 is provided between the cleaning unit 131A and the cleaning unit 131B. In the first transfer chamber 133, a transfer robot 135 that transfers the substrate W between the substrate transfer unit 140, the cleaning unit 131A, and the cleaning unit 131B is provided. A second transfer chamber 134 is provided between the cleaning unit 131 </ b> B and the drying unit 132. In the second transfer chamber 134, a transfer robot 136 that transfers the substrate W between the cleaning unit 131B and the drying unit 132 is provided.

  The cleaning unit 131A includes, for example, a roll sponge type cleaning module, and primarily cleans the substrate W. The cleaning unit 131B also includes a roll sponge type cleaning module, and performs secondary cleaning of the substrate W. The cleaning unit 131A and the cleaning unit 131B may be the same type or different types of cleaning modules, for example, a pencil sponge type cleaning module or a two-fluid jet type cleaning module. Good. The drying unit 132 includes, for example, a drying module that performs Rotagoni drying (IPA (Iso-Propyl Alcohol) drying). After drying, the shutter 101 a provided on the partition wall between the drying unit 132 and the load / unload unit 110 is opened, and the substrate W is taken out from the drying unit 132 by the transport robot 112.

  The substrate transport unit 140 includes a lifter 141, a first linear transporter 142, a second linear transporter 143, and a swing transporter 144. In the substrate transport path 103, the first transport position TP1, the second transport position TP2, the third transport position TP3, the fourth transport position TP4, the fifth transport position TP5, and the sixth transport are sequentially performed from the load / unload unit 110 side. A position TP6 and a seventh transport position TP7 are set.

  The lifter 141 is a mechanism for transporting the substrate W up and down at the first transport position TP1. The lifter 141 receives the substrate W from the transfer robot 112 of the load / unload unit 110 at the first transfer position TP1. Further, the lifter 141 delivers the substrate W received from the transfer robot 112 to the first linear transporter 142. A shutter 101b is provided in the partition wall between the first transport position TP1 and the load / unload unit 110. When the substrate W is transported, the shutter 101b is opened and the substrate W is received by the lifter 141 from the transport robot 112. Passed.

  The first linear transporter 142 is a mechanism that transports the substrate W among the first transport position TP1, the second transport position TP2, the third transport position TP3, and the fourth transport position TP4. The first linear transporter 142 includes a plurality of transport hands 145 (145A, 145B, 145C, 145D) and a linear guide mechanism 146 that moves each transport hand 145 horizontally at a plurality of heights. The transport hand 145A is moved between the first transport position TP1 and the fourth transport position TP4 by the linear guide mechanism 146. The transport hand 145A is a pass hand for receiving the substrate W from the lifter 141 and delivering it to the second linear transporter 143. The transport hand 145A is not provided with a lifting drive unit.

  The transport hand 145B is moved between the first transport position TP1 and the second transport position TP2 by the linear guide mechanism 146. The transport hand 145B receives the substrate W from the lifter 141 at the first transport position TP1, and delivers the substrate W to the polishing unit 121A at the second transport position TP2. The transport hand 145B is provided with an elevating drive unit, which is raised when the substrate W is transferred to the top ring 124 of the polishing unit 121A, and is lowered after the substrate W is transferred to the top ring 124. In addition, the same raising / lowering drive part is provided also in the conveyance hand 145C and the conveyance hand 145D.

  The transport hand 145C is moved between the first transport position TP1 and the third transport position TP3 by the linear guide mechanism 146. The transport hand 145C receives the substrate W from the lifter 141 at the first transport position TP1, and delivers the substrate W to the polishing unit 121B at the third transport position TP3. The transport hand 145C also functions as an access hand that receives the substrate W from the top ring 124 of the polishing unit 121A at the second transport position TP2 and delivers the substrate W to the polishing unit 121B at the third transport position TP3.

  The transport hand 145D is moved between the second transport position TP2 and the fourth transport position TP4 by the linear guide mechanism 146. The transport hand 145D receives the substrate W from the top ring 124 of the polishing unit 121A or the polishing unit 121B at the second transport position TP2 or the third transport position TP3, and receives the substrate W from the swing transporter 144 at the fourth transport position TP4. It functions as an access hand for passing.

  The swing transporter 144 has a hand that can move between the fourth transport position TP4 and the fifth transport position TP5, and delivers the substrate W from the first linear transporter 142 to the second linear transporter 143. . Also, the swing transporter 144 delivers the substrate W polished by the polishing unit 120 to the cleaning unit 130. A temporary table 147 for the substrate W is provided on the side of the swing transporter 144. The swing transporter 144 places the substrate W received at the fourth transport position TP4 or the fifth transport position TP5 upside down and places it on the temporary placement table 147. The substrate W placed on the temporary placement table 147 is transferred to the first transfer chamber 133 by the transfer robot 135 of the cleaning unit 130.

  The second linear transporter 143 is a mechanism that transports the substrate W among the fifth transport position TP5, the sixth transport position TP6, and the seventh transport position TP7. The second linear transporter 143 includes a plurality of transport hands 148 (148A, 148B, 148C) and a linear guide mechanism 149 that moves each transport hand 145 horizontally at a plurality of heights. The transport hand 148A is moved between the fifth transport position TP5 and the sixth transport position TP6 by the linear guide mechanism 149. The transport hand 145A functions as an access hand that receives the substrate W from the swing transporter 144 and delivers it to the polishing unit 121C.

The transport hand 148B moves between the sixth transport position TP6 and the seventh transport position TP7.
The transport hand 148B functions as an access hand for receiving the substrate W from the polishing unit 121C and delivering it to the polishing unit 121D. The transport hand 148C moves between the seventh transport position TP7 and the fifth transport position TP5. The transport hand 148C receives the substrate W from the top ring 124 of the polishing unit 121C or the polishing unit 121D at the sixth transport position TP6 or the seventh transport position TP7, and receives the substrate W from the swing transporter 144 at the fifth transport position TP5. It functions as an access hand for passing. Although not described, the operation of the transfer hand 148 when the substrate W is transferred is the same as the operation of the first linear transporter 142 described above.

  Also in the substrate processing apparatus 100 configured as described above, by applying the above-described polishing table 1 of the present invention and its drainage exhaust structure 10 to the polishing table 123 of the polishing unit 121 (polishing apparatus), a clean area around the polishing table 123 is obtained. The state can be further improved.

  Although preferred embodiments of the present invention have been described and described above, it should be understood that these are exemplary of the present invention and should not be considered as limiting. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the invention. Accordingly, the invention is not to be seen as limited by the foregoing description, but is limited by the scope of the claims.

  For example, in the above-described embodiment, the configuration in which the polishing apparatus of the present invention is applied to the polishing unit 120 of the substrate processing apparatus 100 (chemical mechanical polishing (CMP) apparatus) is exemplified. The present invention can also be applied to a substrate processing apparatus (for example, a back surface polishing apparatus, a bevel polishing apparatus, an etching apparatus, or a plating apparatus).

  DESCRIPTION OF SYMBOLS 1 ... Polishing table, 2 ... Table, 2a ... 1st table part, 2b ... 2nd table part, 2c ... Level | step difference, 2d ... Bolt, 2d1 ... Seal washer (2nd sealing member), 2e ... O-ring (1st seal) Member), 2f ... knock pin hole, 2g ... sensor hole, 3 ... table base, 3a ... draining projection, 3b ... knock pin, 3c ... sensor mounting portion, 4 ... heat medium flow path, 5 ... wafer film detector, 6 ... Flange, 6a ... bolt, 6b ... bolt, 7 ... motor, 7a ... motor rotating shaft, 7b ... motor casing, 8 ... frame, 9 ... shaft, 9a ... rotary joint, 9b ... heat medium supply pipe, 9c ... pipe, 9d ... Rotary joint rotary shaft, 9e ... cooling water flange, 10 ... drainage exhaust structure, 11 ... flinger (draining member), 20 ... cover (cover member), 31 ... 樋31a ... outer peripheral wall, 31b ... inner peripheral wall, 32 ... drainage bowl, 32a ... lid member, 32b ... mounting hole, 33 ... discharge pipe, 40 ... gas-liquid separation device, 41 ... gas-liquid separation cylinder, 42 ... collision plate, 42a ... upper collision plate, 42b ... lower collision plate, 43 ... opening, 44 ... drainage pipe, 45 ... exhaust pipe, 100 ... substrate processing apparatus, 120 ... polishing section, 121 ... polishing unit (polishing apparatus), 130 ... Cleaning part, L ... center axis, W ... substrate

Claims (7)

A polishing table in which liquid is supplied to the upper surface and rotates around the central axis;
An annular liquid receiving member disposed below the peripheral edge of the polishing table;
A polishing apparatus, comprising: a cylindrical draining member attached to a peripheral portion of the polishing table and having a lower end extending toward the liquid receiving member. The liquid receiving member has an inner peripheral wall disposed radially inward from the lower end of the draining member,
The polishing apparatus according to claim 1, wherein a lower end portion of the draining member extends below an upper end portion of the inner peripheral wall. A step for attaching the draining member is formed on the peripheral edge of the polishing table,
The draining member is attached to the bottom surface of the step through a bolt,
A first seal member that seals a gap in a radial direction between the draining member and the side surface of the step;
The polishing apparatus according to claim 1, further comprising: a second seal member that seals an insertion hole of the draining member through which the bolt is inserted. A cover member that is disposed radially outward from the draining member, and gradually decreases in the radial gap with the draining member toward the upper surface of the polishing table;
A gas-liquid separator that sucks gas through the liquid receiving member and separates the liquid contained in the gas, and
The polishing apparatus according to any one of claims 1 to 3, wherein the gas-liquid separator uses a gap formed between the draining member and the cover member as a suction path. The cover member is disposed with a gap from the outer peripheral wall of the liquid receiving member,
The polishing apparatus according to claim 4, wherein a gap dimension between the cover member and the outer peripheral wall is smaller than a gap dimension between the cover member and an upper end portion of the draining member.   The polishing apparatus according to claim 4, wherein the cover is movable in a vertical direction. A polishing section for polishing the substrate;
A substrate processing apparatus having a cleaning unit for cleaning the substrate polished by the polishing unit,
The said grinding | polishing part is equipped with the grinding | polishing apparatus as described in any one of Claims 1-6, The substrate processing apparatus characterized by the above-mentioned.

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