JP2019179813A - Circuit forming substrate cleaning method and cleaning apparatus - Google Patents

Abstract

To provide a method and an apparatus for cleaning a circuit forming substrate capable of efficiently removing fine particles (dust) on a circuit forming substrate and suppressing corrosion due to battery formation between different metals via water.SOLUTION: The method includes: washing a circuit forming substrate by adjusting pH of pure water or ultrapure water to 8.5 or more and less than 9.5; using alkaline hydrogen water in which hydrogen gas is dissolved; and applying physical action such as ultrasound. Alternatively, the method includes performing two-fluid jet cleaning with hydrogen gas and alkaline water obtained by adjusting pure water or ultra-pure water to 8.5 or more and less than 9.5.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a cleaning method and a cleaning apparatus for a substrate on which a circuit is formed. More specifically, the present invention can efficiently remove fine particles (dust) attached to a substrate while suppressing corrosion of a metal circuit formed on the substrate. The present invention relates to a cleaning method and a cleaning apparatus for a circuit-formed substrate.

  The circuit board that has the circuit formed on the board uses water whose resistivity is increased (electric conductivity is increased) by dissolving carbon dioxide in pure water or ultrapure water to prevent electrostatic breakdown due to electrification. Have been washed. Product defects in cleaning circuit-formed substrates may be caused not only by electrostatic breakdown due to charging, but also by adhesion of fine particles (dust) and corrosion due to battery formation between dissimilar metals. However, since the carbon dioxide-dissolved water is weakly acidic, there is a disadvantage that not only fine particles (dust) are easily adsorbed but also an environment in which the circuit on the substrate is easily corroded.

  Conventionally, as a method for cleaning a Ge substrate for devices, in Patent Document 1, cleaning is performed while applying ultrasonic waves using cleaning water in which hydrogen gas is dissolved in pure water and ammonia is added to adjust the pH to 7 to 11. A method has been proposed. However, Patent Document 1 has no description about cleaning of a circuit-formed substrate, and Patent Document 1 only evaluates the presence / absence of surface roughness of the substrate and the removal rate of dust (fine particles). No investigation has been made on the inhibition of corrosion in circuit-formed substrates.

JP 2014-225570 A

  As described above, carbonated water is conventionally used for cleaning circuit-formed substrates in order to prevent electrostatic breakdown due to electrification, but dicing for cutting circuit-formed substrates into chips is particularly used for cleaning with carbonated water. The problem that the fine particles (dust) generated in the process cannot be efficiently removed and the dissimilar metal on the cut surface corrodes through water has become apparent.

  The present invention relates to a circuit forming substrate cleaning method and cleaning capable of efficiently removing fine particles (dust) adhering to a substrate while suppressing corrosion of a metal circuit formed on the substrate in cleaning the circuit forming substrate. It is an object to provide an apparatus.

As a result of intensive studies to solve the above problems, the present inventor has a region exhibiting reducibility in water in which hydrogen gas is dissolved or mixed in pure water or ultrapure water. Since corrosion due to battery formation between dissimilar metals can also be suppressed, the pH of pure water or ultrapure water is adjusted to 8.5 or more and less than 9.5 to physically add alkaline hydrogen water in which hydrogen gas is dissolved. By performing a two-fluid jet cleaning with alkaline water and hydrogen gas adjusted to a pH of 8.5 or more and less than 9.5. It has been found that fine particles (dust) on the circuit forming substrate can be efficiently removed, and that corrosion due to battery formation between different metals via water can be suppressed.
That is, the gist of the present invention is as follows.

[1] In a method for cleaning a substrate on which a circuit is formed, the pH of pure water or ultrapure water is adjusted to 8.5 or more and less than 9.5, and physically using alkaline hydrogen water in which hydrogen gas is dissolved. A circuit forming substrate cleaning method, wherein cleaning is performed while applying an action.

[2] A method for cleaning a circuit forming substrate according to [1], wherein the pH is adjusted using ammonia gas or aqueous ammonia.

[3] A method of cleaning a circuit forming substrate according to [1] or [2], wherein the physical action is ultrasonic.

[4] In a method for cleaning a substrate on which a circuit is formed, two-fluid jet cleaning is performed with hydrogen gas and alkaline water in which the pH of pure water or ultrapure water is adjusted to 8.5 or more and less than 9.5. A method for cleaning a circuit-formed substrate.

[5] A circuit-forming substrate cleaning method, wherein the pH is adjusted with ammonia gas or ammonia water in [4].

[6] In an apparatus for cleaning a substrate on which a circuit is formed, a cleaning machine for cleaning the circuit forming substrate, and a pH adjusting means for adjusting the pH of pure water or ultrapure water to 8.5 or more and less than 9.5. A hydrogen gas dissolving means for dissolving hydrogen gas in water adjusted in pH by the pH adjusting means, a washing water supplying means for supplying alkaline hydrogen water from the hydrogen gas dissolving means to the washing machine, and the alkaline hydrogen water. And a device for applying a physical action to the circuit forming substrate.

[7] The circuit forming substrate cleaning apparatus according to [6], wherein the pH adjusting means is means for adjusting pH by adding ammonia gas or ammonia water to the pure water or ultrapure water.

[8] The circuit forming substrate cleaning apparatus according to [6] or [7], wherein the physical action is an ultrasonic wave, and the cleaning machine is an ultrasonic cleaning machine.

[9] In an apparatus for cleaning a substrate on which a circuit is formed, a two-fluid jet cleaning machine for cleaning the circuit-formed substrate and a pH for adjusting the pH of pure water or ultrapure water to 8.5 or more and less than 9.5 Adjusting means; means for supplying alkaline water pH adjusted by the pH adjusting means to the two-fluid jet washer; and means for supplying hydrogen gas to the two-fluid jet washer. A circuit forming substrate cleaning apparatus, wherein two-fluid jet cleaning is performed with hydrogen gas.

[10] The circuit forming substrate cleaning apparatus according to [9], wherein the pH adjusting means is means for adjusting pH by adding ammonia gas or ammonia water to the pure water or ultrapure water.

  According to the circuit forming substrate cleaning method and apparatus of the present invention using alkaline hydrogen water or alkaline water, corrosion of the metal circuit formed on the circuit forming substrate can be suppressed. Further, by using alkaline hydrogen water in which hydrogen gas is further dissolved in such alkaline water and washing while adding a physical action, or a two-fluid jet of such alkaline water and hydrogen gas. By cleaning, fine particles (dust) adhering to the circuit forming substrate can be highly cleaned and removed without causing the problem of elution of the circuit forming metal and without causing electrostatic breakdown due to charging. .

  According to the present invention, the corrosion of the circuit-forming metal on the circuit-forming substrate is suppressed, and charging can be prevented to perform high-level cleaning. Therefore, the cleaning according to the present invention is an anti-static measure in the dicing process of the circuit-forming substrate. It is very effective as well.

  Thus, according to the present invention, not only can the residual rate of fine particles in the cleaning of the circuit-forming substrate be greatly improved, but the cleaning water used in the present invention has no problem of elution of the circuit-forming metal, and pH adjustment Since it can be removed immediately by using ammonia water or ammonia gas, the washing wastewater can be recovered and easily reused as raw water for pure water production or ultrapure water production. It is possible to reduce the use of surface water such as water and lake water, well water, and industrial water.

1 is a schematic system diagram showing an example of an embodiment of a circuit forming substrate cleaning method and a cleaning apparatus according to the present invention. It is a typical systematic diagram which shows the other example of embodiment of the washing | cleaning method and washing | cleaning apparatus of the circuit formation board | substrate of this invention.

  Embodiments of a circuit forming substrate cleaning method and a cleaning apparatus according to the present invention will be described below. In addition, the following description is an example of embodiment of this invention, Comprising: This invention is not limited to the following description, unless the summary is exceeded.

<Circuit forming substrate>
The circuit forming substrate to be cleaned in the present invention is one in which the metal or metal oxide forming the circuit is exposed on the entire surface or a part of the substrate. There are no particular restrictions on the metal forming the circuit, and copper (Cu), aluminum (Al), alloys thereof, and the like are common.
There are no particular restrictions on the shape and material of the substrate. Usually, the material of the substrate is silicon or the like.

<Pure water or ultrapure water>
There is no restriction | limiting in the manufacturing method of a pure water or an ultrapure water, According to a conventional method, it manufactures combining chemical processing, a membrane process, an ion exchange process, and a physicochemical process.
The pure water or ultrapure water used as cleaning water in the present invention is preferably one having a sufficiently reduced dissolved oxygen concentration, and is sufficiently deaerated to dissolve hydrogen gas in this water. It is preferable.
From this point of view, the pure water or ultrapure water used in the present invention is preferably deaerated by a deaeration means such as a deaeration membrane module to a dissolved oxygen concentration of 1 μg / L or less.

<PH adjustment>
Pure water or ultrapure water is adjusted to pH 8.5 or more and less than 9.5. If the pH of the washing water is less than 8.5, a sufficient washing effect cannot be obtained, resulting in a high residual rate of fine particles after washing. In addition, there is a risk of electrostatic breakdown due to charging. On the other hand, when the pH of the cleaning water is 9.5 or more, the problem of corrosion of dissimilar metals, particularly corrosion of Cu and Al is likely to occur. For this reason, in this invention, pure water or ultrapure water is adjusted to pH 8.5 or more and less than 9.5.

  This pH adjustment is preferably performed with ammonia water or ammonia gas on the premise that the cleaning wastewater is reused as raw water for pure water production or ultrapure water production.

<Washing temperature>
There is no restriction | limiting in particular in the temperature at the time of washing | cleaning in this invention.

<Washing with alkaline hydrogen water>
In the method for cleaning a circuit-formed substrate of the present invention using alkaline hydrogen water, the pH of pure water or ultrapure water is adjusted to 8.5 or more and 9.5 or less, and the alkali hydrogen water in which hydrogen gas is dissolved is used. Wash while applying physical action.

  As a physical action to be added to the alkaline hydrogen water by this method, ultrasonic waves are preferable, the frequency is preferably 0.5 MHz to 10 MHz, and the output is preferably 0.3 W to 10 W.

  The dissolved hydrogen concentration of the alkaline hydrogen water is preferably 0.6 mg / L or more and 1.5 mg / L or less. As described above, pure water or ultrapure water that dissolves hydrogen gas from the viewpoint of hydrogen gas dissolution efficiency. The water is preferably deaerated.

FIG. 1 is a schematic system diagram showing a cleaning device used in a cleaning method using alkaline hydrogen water. Pure water or ultrapure water is pH 8.5 or more by adding ammonia gas or aqueous ammonia with pH adjusting means 1. After adjusting to less than 9.5, the hydrogen gas is dissolved by the hydrogen gas dissolving means 2 such as a gas dissolving membrane module, and the obtained alkaline hydrogen water is supplied to a washing machine such as an ultrasonic washing machine, The circuit forming substrate 10 is cleaned while a physical action such as ultrasonic waves is added by the dynamic action applying means 3.
In addition, you may have deaeration means, such as a deaeration membrane module, in the upstream of the pH adjustment means 1. FIG.

  In addition, as shown in FIG. 1, the ultrasonic cleaning in the present invention is not limited to the branch-and-leaf cleaning in which cleaning water is applied by applying ultrasonic waves to the circuit forming substrate, and the circuit forming substrate is immersed in alkaline hydrogen water. In addition, immersion cleaning performed by applying ultrasonic waves thereto may be used.

<Cleaning by two-fluid jet cleaning>
In the method for cleaning a circuit-formed substrate of the present invention using two-fluid jet cleaning, hydrogen gas and alkaline water adjusted to a pH of 8.5 or more and less than 9.5 are used. Mix and clean the circuit board with a two-fluid jet cleaner. Two-fluid jet cleaning is a method of cleaning by discharging a mixed fluid of cleaning water and gas toward an object to be cleaned. In the present invention, a circuit is formed with a mixed fluid of alkaline water and hydrogen gas as cleaning water. Cleaning is performed by discharging toward the substrate. Since hydrogen gas is an explosive gas, the cleaning environment must be a nitrogen atmosphere, or the hydrogen gas concentration in the cleaning environment must be 4% or less, preferably 1% or less.

As discharge conditions for alkaline hydrogen water and hydrogen gas discharged from the cleaning fluid discharge nozzle, for example, the following conditions can be employed.
Alkaline hydrogen water supply amount: 0.05 to 0.5 L / min
Nozzle hydraulic pressure: 0.05 to 0.5 MPa
Gas pressure: 0.1-0.6 MPa

FIG. 2 is a schematic system diagram showing a cleaning apparatus used in a cleaning method by two-fluid jet cleaning, and pure water or ultrapure water has a pH of 8.5 or more by adding ammonia gas or ammonia water in the pH adjusting means 1. , Adjusted to less than 9.5, and then fed to the hydrogen gas mixing means 4 of the two-fluid jet washer, and the alkaline water / hydrogen gas mixed fluid from the hydrogen gas mixing means 4 is directed toward the circuit forming substrate 10. Discharged and two-fluid jet cleaning is performed.
As in FIG. 1, degassing means such as a degassing membrane module may be provided on the upstream side of the pH adjusting means 1.

  Hereinafter, the present invention will be described more specifically with reference to examples, comparative examples, and experimental examples.

  In the following examples, comparative examples, and experimental examples, all sheets are in a clean room of class 1000 (corresponding to US federal standard Fed. Std. 209D, JIS standard JIS B 9920 ISO standard ISO 14644-1 equivalent to class 6). A cleaning test was performed using a type φ300 mm wafer cleaning tester.

[Cu / Al circuit board cleaning test]
A circuit-formed substrate in which a circuit was formed with copper (Cu) and aluminum (Al) on a φ300 mm silicon wafer was subjected to a cleaning test. This circuit-formed substrate was exposed in a clean room for 4 hours and then set on a single wafer type φ300 mm wafer cleaning test machine. Also, nitrogen drying after cleaning is performed by nitrogen gas purge. After drying, the number of fine particles (defects) on the circuit forming substrate is measured with a patterned wafer inspection apparatus, and exposed on the circuit forming substrate before cleaning exposed for 4 hr in a clean room. The fine particle residual ratio (%) was calculated with the fine particle (defect) number being 100.

<Example I-1>
Alkaline water with dissolved oxygen concentration of 1 μg / L or less as washing water, adjusted to pH 9.0 by adding ammonia water, and then dissolved in hydrogen gas to make dissolved hydrogen concentration 1.2 mg / L A cleaning test was performed using hydrogen water as follows.
A circuit forming substrate (Cu / Al circuit substrate) rotating at 500 rpm is washed with 2 L / min of alkaline hydrogen water for 60 seconds while applying ultrasonic waves, then dried in nitrogen, and on the dried circuit forming substrate. The number of fine particles (defects) was evaluated.

<Example I-2>
After adding ammonia water to ultrapure water having a dissolved oxygen concentration of 1 μg / L or less to adjust the pH to 8.5, an alkaline hydrogen water solution having a dissolved hydrogen concentration of 1.2 mg / L by dissolving hydrogen gas is added. A cleaning test was conducted in the same manner as in Example I-1 except that it was used.

<Comparative Example I-1>
Example 1-1 except that hydrogen water having dissolved oxygen concentration of 1.2 mg / L by dissolving hydrogen gas in ultrapure water having a dissolved oxygen concentration of 1 μg / L or less was used as washing water A cleaning test was conducted.

<Comparative Example I-2>
The same as Example I-1 except that carbonated water was dissolved in ultrapure water having a dissolved oxygen concentration of 1 μg / L or less and the electric conductivity was 5 to 10 μS / cm. A cleaning test was conducted.

<Comparative Example I-3>
As cleaning water, ammonia water was added to ultrapure water having a dissolved oxygen concentration of 1 μg / L or less to adjust the pH to 9.0, and then hydrogen gas was dissolved to make the dissolved hydrogen concentration 1.2 mg / L. A cleaning test was performed in the same manner as in Example I-1 except that cleaning was performed without applying ultrasonic waves using alkaline hydrogen water.

<Comparative Example I-4>
As the cleaning water, hydrogen water is dissolved in ultrapure water having a dissolved oxygen concentration of 1 μg / L or less and the hydrogen dissolved concentration is 1.2 mg / L, and cleaning is performed without applying ultrasonic waves. A cleaning test was conducted in the same manner as in Example I-1 except that.

<Comparative Example I-5>
As cleaning water, carbonated water in which carbon dioxide gas is dissolved in ultrapure water having a dissolved oxygen concentration of 1 μg / L or less to have an electric conductivity of 5 to 10 μS / cm is used for cleaning without applying ultrasonic waves. A cleaning test was conducted in the same manner as in Example I-1 except that.

  Table 1 shows the results obtained in Examples I-1 to I-2 and Comparative Examples I-1 to I-5.

Table 1 shows the following.
By washing with alkaline hydrogen water to which ultrasonic waves are applied, the residual rate of fine particles on the circuit-forming substrate can be 5% or 12% (Example I-1, Example I-2), and ultrasonic waves are applied. It was confirmed that the residual ratio of fine particles can be greatly improved as compared with the case of the carbonated water (Comparative Example I-2). On the other hand, in the alkaline hydrogen water to which no ultrasonic wave was applied, the fine particle remaining rate was 32% (Comparative Example I-3). Even when ultrasonic waves were applied, the residual rate of fine particles was 21% in hydrogen water having a pH of 7.0 (Comparative Example I-1). Further, it was confirmed that the fine particles could not be removed unless ultrasonic waves were applied in hydrogen water having a pH of 7 (Comparative Example I-4), and the residual rate of fine particles was slightly increased unless ultrasonic waves were applied in carbonated water ( Comparative Example I-5). This is because the oxidation-reduction potential of carbonated water is 0.8 V (vs. NHE), and the state on the circuit-formed substrate before cleaning is different due to metal corrosion due to dissolution of Cu. It was considered.

<Example II-1>
A washing test was conducted by two-fluid jet washing in which ammonia water was added to ultrapure water having a dissolved oxygen concentration of 1 μg / L or less to adjust pH to 9.0 and hydrogen gas was mixed.
A circuit forming substrate (Cu / Al circuit substrate) rotating at 500 rpm is washed with alkaline hydrogen water in which 2 L / min of alkaline water and hydrogen gas are mixed for 60 seconds, then dried in nitrogen, and on the dried circuit forming substrate. The number of fine particles (defects) was evaluated.

<Comparative Example II-1>
Instead of using alkaline water, ultrapure water with a dissolved oxygen concentration of 1 μg / L or less is used, and instead of hydrogen gas, carbonated water mixed with carbon dioxide equivalent to 5 to 10 μS / cm in electrical conductivity is used. Was a washing test in the same manner as in Example II-1.

  The results obtained in Example II-1 and Comparative Example II-1 are shown in Table 2 together with the results of Example I-1 and Comparative Example I-2.

  From the comparison between Example II-1 and Example I-1 and the comparison between Comparative Example II-1 and Comparative Example I-2, the fine particles remain even in cleaning with different physical actions such as two-fluid jet cleaning and ultrasonic application. It can be seen that there is almost no difference in rate and the cleaning effect is equivalent.

[Cleaning test of Al flat film substrate]
A substrate (Al flat film substrate) in which an Al flat film was formed on a 300 mm diameter silicon wafer was subjected to a cleaning test. The Al concentration in the cleaning waste water (water used for cleaning) after cleaning the Al flat film substrate was analyzed by ICP-MS, and the etching amount of Al on the Al flat film substrate was calculated.

<Example III-1>
After adding ammonia water to ultrapure water having a dissolved oxygen concentration of 1 μg / L or less and adjusting the pH to 9.0, alkaline hydrogen water having dissolved hydrogen concentration dissolved to 1.2 mg / L is obtained. The cleaning test was performed as follows.
A circuit-forming substrate (Al average film substrate) rotating at 500 rpm was washed with 2 L / min of alkaline hydrogen water for 60 seconds while applying ultrasonic waves, and the washing drainage was analyzed to evaluate the etching amount of Al.

<Example III-2>
As cleaning water, ammonia water was added to ultrapure water having a dissolved oxygen concentration of 1 μg / L or less to adjust the pH to 9.4, and then hydrogen gas was dissolved to a dissolved hydrogen concentration of 1.2 mg / L. A cleaning test was conducted in the same manner as in Example III-1, except that alkaline hydrogen water was used.

<Comparative Example III-2>
As cleaning water, ammonia water was added to ultrapure water having a dissolved oxygen concentration of 1 μg / L or less to adjust the pH to 9.8, and then dissolved in hydrogen gas to a dissolved hydrogen concentration of 1.2 mg / L. A cleaning test was conducted in the same manner as in Example III-1, except that alkaline hydrogen water was used.

  Table 3 shows the results obtained in Example III-1 to Example III-2 and Comparative Example III-1.

Table 3 shows the following.
Al was not etched until the pH of the alkaline hydrogen water was 9.4 (Examples III-1 and III-2), but at pH 9.8, Al was eluted to the side of the cleaning waste water by 170%. It was confirmed (Comparative Example III-1). The redox potential of hydrogen water having a pH of 7 to 10 is -0.4 to -0.55 V (vs. NHE), and Cu does not elute, so the pH should be less than 9.5 with alkaline hydrogen water. Thus, it was confirmed that elution of Cu and Al could be suppressed.

[Evaluation of charge amount of silicon wafer]
A φ300 mmn silicon wafer previously treated with dilute hydrofluoric acid was set in a single wafer type φ300 wafer cleaning test machine, cleaned, and then nitrogen-dried as in Example I-1, and the silicon wafer was charged after nitrogen drying. The amount of electrification by washing was evaluated by measuring the amount with an electrostatic meter and setting the gap between the silicon wafer and the electrostatic meter to 10 mm.

<Experimental Example I-1>
As cleaning water, ammonia water was added to ultrapure water having a dissolved oxygen concentration of 1 μg / L or less to adjust the pH to 9.0, and then hydrogen gas was dissolved to make the dissolved hydrogen concentration 1.2 mg / L. A cleaning test was performed using alkaline hydrogen water as follows.
The silicon wafer rotating at 1,500 rpm was washed with 2 L / min of alkaline hydrogen water for 30 seconds while applying ultrasonic waves, then dried with nitrogen, and the charge amount of the dried silicon wafer was evaluated.

<Experimental Example I-2>
As cleaning water, ammonia water was added to ultrapure water having a dissolved oxygen concentration of 1 μg / L or less to adjust the pH to 8.5, and then dissolved in hydrogen gas to a dissolved hydrogen concentration of 1.2 mg / L. A cleaning test was conducted in the same manner as in Experimental Example I-1, except that alkaline hydrogen water was used.

<Experimental Example I-3>
Experimental Example I-1 except that hydrogen water was dissolved in ultrapure water having a dissolved oxygen concentration of 1 μg / L or less and the dissolved hydrogen concentration was 1.2 mg / L. A washing test was conducted in the same manner.

<Experimental Example I-4>
Experimental Example I-1 except that carbonated water in which carbon dioxide gas was dissolved in ultrapure water having a dissolved oxygen concentration of 1 μg / L or less and the electric conductivity was 5 to 10 μS / cm was used as the washing water. A washing test was conducted in the same manner.

  Table 4 shows the results obtained in Experimental Example I-1 to Experimental Example I-4.

  From Table 4, it has been confirmed that by setting the pH of the hydrogen water to 8.5 or more, the charge amount of the silicon wafer can be made to the same level as when washed with carbonated water.

  According to the present invention, the corrosion of the circuit-forming metal can be suppressed and charging can be prevented. Therefore, the present invention is effective for cleaning in the dicing process of the circuit-forming substrate.

  As is apparent from the above results, the circuit-formed substrate is controlled to pH 8.5 or less and less than 9.5 and washed with alkaline hydrogen water to which ultrasonic waves are applied, or the pH is set to 8.5. As described above, the two-fluid jet cleaning of alkaline water and hydrogen gas controlled to less than 9.5 can greatly improve the residual rate of fine particles compared to carbonated water to which ultrasonic waves are applied. It can be easily reused as raw water for pure water production or ultrapure water production, and the amount of surface water such as river water and lake water, well water, and industrial water required for the entire factory can be reduced.

DESCRIPTION OF SYMBOLS 1 pH adjustment means 2 Gas melt | dissolution means 3 Physical action application means 4 Hydrogen gas mixing means 10 Circuit formation board | substrate

Claims (10)

  In a method of cleaning a substrate on which a circuit is formed, the pH of pure water or ultrapure water is adjusted to 8.5 or more and less than 9.5, and physical action is applied using alkaline hydrogen water in which hydrogen gas is dissolved. A circuit forming substrate cleaning method, wherein the cleaning is performed while cleaning.   2. The circuit forming substrate cleaning method according to claim 1, wherein the pH is adjusted using ammonia gas or ammonia water.   3. The circuit forming substrate cleaning method according to claim 1, wherein the physical action is an ultrasonic wave.   In the method for cleaning a substrate on which a circuit is formed, two-fluid jet cleaning is performed with hydrogen gas and alkaline water adjusted to a pH of 8.5 or more and less than 9.5 in pure water or ultrapure water. A method of cleaning a circuit forming substrate.   5. The circuit forming substrate cleaning method according to claim 4, wherein the pH is adjusted with ammonia gas or ammonia water. In an apparatus for cleaning a substrate on which a circuit is formed,
A cleaning machine for cleaning the circuit forming substrate;
PH adjusting means for adjusting the pH of pure water or ultrapure water to 8.5 or more and less than 9.5;
Hydrogen gas dissolving means for dissolving hydrogen gas in water adjusted in pH by the pH adjusting means;
Washing water supply means for supplying alkaline hydrogen water from the hydrogen gas dissolving means to the washing machine;
A circuit forming substrate cleaning apparatus comprising: means for applying a physical action to the alkaline hydrogen water.   7. The circuit forming substrate cleaning apparatus according to claim 6, wherein the pH adjusting means is means for adjusting pH by adding ammonia gas or ammonia water to the pure water or ultrapure water.   8. The circuit forming substrate cleaning apparatus according to claim 6, wherein the physical action is an ultrasonic wave, and the cleaning machine is an ultrasonic cleaning machine. In an apparatus for cleaning a substrate on which a circuit is formed,
A two-fluid jet cleaner for cleaning the circuit-forming substrate;
PH adjusting means for adjusting the pH of pure water or ultrapure water to 8.5 or more and less than 9.5;
Means for supplying alkaline water adjusted in pH by the pH adjusting means to the two-fluid jet washer;
Means for supplying hydrogen gas to the two-fluid jet washer,
A circuit forming substrate cleaning apparatus, wherein two-fluid jet cleaning is performed with the alkaline water and hydrogen gas.   10. The circuit forming substrate cleaning apparatus according to claim 9, wherein the pH adjusting means is means for adjusting pH by adding ammonia gas or ammonia water to the pure water or ultrapure water.

Images