JP2019165214A - 半導体プロセス用組成物および半導体プロセス - Google Patents
半導体プロセス用組成物および半導体プロセス Download PDFInfo
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- JP2019165214A JP2019165214A JP2019039152A JP2019039152A JP2019165214A JP 2019165214 A JP2019165214 A JP 2019165214A JP 2019039152 A JP2019039152 A JP 2019039152A JP 2019039152 A JP2019039152 A JP 2019039152A JP 2019165214 A JP2019165214 A JP 2019165214A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D7/10—Salts
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/20—Water-insoluble oxides
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Abstract
Description
以下の式1:
によって表される化合物または以下の式2:
によって表される化合物を含む第2の成分を含むことを特徴とする、半導体プロセス用組成物を提供する。
(式3中、Mはケイ素(Si)またはゲルマニウム(Ge)であり、
Aは、単結合、置換または非置換C1〜C30アルキレン基、置換または非置換C2〜C30アルケニレン基、置換または非置換C2〜C30アルキニレン基、置換または非置換の二価C6〜C30脂肪族環基、置換または非置換の二価C4〜C30ヘテロ脂肪族環基、置換または非置換の二価C6〜C30芳香族環基、置換または非置換の二価C4〜C30ヘテロ芳香族環基、置換または非置換の二価アミン基、‐O‐、‐S‐、‐S(=O)2‐および‐C(=O)‐から選択され、
R7〜R9は、それぞれ独立して、水素、置換または非置換C1〜C30アルキル基、置換または非置換C1〜C30アルコキシ基、置換または非置換C2〜C30アルケニル基、置換または非置換C2〜C30アルキニル基、置換または非置換C6〜C30脂肪族環基、置換または非置換C4〜C30ヘテロ脂肪族環基、置換または非置換C6〜C30芳香族環基、置換または非置換C4〜C30ヘテロ芳香族環基、置換または非置換アミン基、ヒドロキシル基、カルボニル基、カルボキシル基、ハロゲン基、およびオキシド(=O)基から選択される。)
によって表される基から選択されてもよい。
以下の式1:
によって表される化合物または以下の式2:
によって表される化合物を含む第2の成分を含む、半導体プロセス用組成物が提供される。
によって表される基から選択されてもよい。
Aは、単結合、置換または非置換C1〜C30アルキレン基、置換または非置換C2〜C30アルケニレン基、置換または非置換C2〜C30アルキニレン基、置換または非置換の二価C6〜C30脂肪族環基、置換または非置換の二価C4〜C30ヘテロ脂肪族環基、置換または非置換の二価C6〜C30芳香族環基、置換または非置換の二価C4〜C30ヘテロ芳香族環基、置換または非置換の二価アミン基、‐O‐、‐S‐、‐S(=O)2‐および‐C(=O)‐から選択され、
R7〜R9は、それぞれ独立して、水素、置換または非置換C1〜C30アルキル基、置換または非置換C1〜C30アルコキシ基、置換または非置換C2〜C30アルケニル基、置換または非置換C2〜C30アルキニル基、置換または非置換C6〜C30脂肪族環基、置換または非置換C4〜C30ヘテロ脂肪族環基、置換または非置換C6〜C30芳香族環基、置換または非置換C4〜C30ヘテロ芳香族環基、置換または非置換アミン基、ヒドロキシル基、カルボニル基、カルボキシル基、ハロゲン基、およびオキシド(=O)基から選択される。
磁気バーを備えた各実験用ビーカーに、以下の表1に示すような種類および配合量(重量%)で、第1の成分、第2の成分、溶媒および添加物を入れ、次いで、500rpmの速度、室温で4時間撹拌して、半導体プロセス用組成物を作製した。
A‐1:フッ化水素酸
A‐2:硫酸
A‐3:酢酸
A‐4:シュウ酸
A‐5:リン酸
B‐1:四塩化ゲルマニウム(上記式1‐1の化合物)
B‐2:二塩化ゲルマニウム(上記式1‐2の化合物)
B‐3:二酸化ゲルマニウム(上記式1‐3の化合物)
B‐4:テトラキス(トリメチルシロキシ) ゲルマニウム(上記式1‐4の化合物)
B‐5:トリメチルゲルミルトリクロロシラン(上記式1‐5の化合物)
B‐6:3‐(トリヒドロキシゲルミル)プロピオン酸(上記式1‐6の化合物)
B‐7:テトラエトキシゲルマニウム(上記式1‐7の化合物)
B‐8:テトラメトキシゲルマニウム(上記式1‐8の化合物)
B‐9:テトライソプロポキシゲルマニウム(上記式1‐9の化合物)
B‐10:ビス(2‐カルボキシエチルゲルマニウムセスキオキシド)(上記式1‐10の化合物)
C‐1:フッ化アンモニウム
(溶媒)
D‐1:水
D‐2:ジメチルスルホキシド
D‐3:NMP
試験例1:洗浄性の評価
実施例1〜18および比較例1〜5において作製した半導体プロセス用組成物を、洗浄性に関して評価した。
<評価基準>
優秀:99%以上除去
良好:90%以上99%未満除去
普通:80%以上90%未満除去
不良:80%未満除去
実施例1〜18および比較例1〜5の半導体プロセス用組成物を各々、腐食性に関して評価した。
実施例1〜18および比較例1〜5の半導体プロセス用組成物を各々、60℃の一定温度に保持した。次いで、試験例1に従って作製した試験片を、その中に10分間浸漬した。次いで、試験片を取り出して、水で1分間濯いだ。次いで、窒素ガスで完全に乾燥して、腐食作用を走査型電子顕微鏡(SEM)によってチェックした。各膜物質に対して膜厚の変化を時間で割ることによって、エッチング速度を計算した。その結果を、以下の表2で示す。
実施例19〜28および比較例6〜8の半導体プロセス用組成物を各々、窒化物膜に対するエッチング性に関して評価した。
Claims (13)
- 無機酸または有機酸を含む第1の成分;および
以下の式1:
によって表される化合物または以下の式2:
[式1および式2中、R1〜R6は、それぞれ独立して、水素、置換または非置換C1〜C30アルキル基、置換または非置換C1〜C30アルコキシ基、置換または非置換C2〜C30アルケニル基、置換または非置換C2〜C30アルキニル基、置換または非置換C6〜C30脂肪族環基、置換または非置換C4〜C30ヘテロ脂肪族環基、置換または非置換C6〜C30芳香族環基、置換または非置換C4〜C30ヘテロ芳香族環基、置換または非置換アミン基、ヒドロキシル基、カルボニル基、カルボキシル基、ハロゲン基、オキシド(=O)基、および以下の式3:
(式3中、Mはケイ素(Si)またはゲルマニウム(Ge)であり、
Aは、単結合、置換または非置換C1〜C30アルキレン基、置換または非置換C2〜C30アルケニレン基、置換または非置換C2〜C30アルキニレン基、置換または非置換の二価C6〜C30脂肪族環基、置換または非置換の二価C4〜C30ヘテロ脂肪族環基、置換または非置換の二価C6〜C30芳香族環基、置換または非置換の二価C4〜C30ヘテロ芳香族環基、置換または非置換の二価アミン基、‐O‐、‐S‐、‐S(=O)2‐および‐C(=O)‐から選択され、
R7〜R9は、それぞれ独立して、水素、置換または非置換C1〜C30アルキル基、置換または非置換C1〜C30アルコキシ基、置換または非置換C2〜C30アルケニル基、置換または非置換C2〜C30アルキニル基、置換または非置換C6〜C30脂肪族環基、置換または非置換C4〜C30ヘテロ脂肪族環基、置換または非置換C6〜C30芳香族環基、置換または非置換C4〜C30ヘテロ芳香族環基、置換または非置換アミン基、ヒドロキシル基、カルボニル基、カルボキシル基、ハロゲン基、およびオキシド(=O)基から選択される。)
によって表される基から選択される。]
によって表される化合物を含む第2の成分を含むことを特徴とする、半導体プロセス用組成物。 - 前記第1の成分および第2の成分の反応生成物を更に含む、請求項1記載の半導体プロセス用組成物。
- 水または極性有機溶媒を含む溶媒を更に含む、請求項1記載の半導体プロセス用組成物。
- 前記極性有機溶媒が、アルコール、グリコール、ラクトン、ラクタム、スルホキシド、スルホン、アミド、尿素、イミダゾリジノン、ニトリル、およびピロリドンから成る群から選択される少なくとも1つを含む、請求項3記載の半導体プロセス用組成物。
- 前記無機酸が、硫酸、硝酸、リン酸、ケイ酸、ホウ酸、塩酸、フッ化水素酸、および過塩素酸から成る群から選択される少なくとも1つを含む、請求項1記載の半導体プロセス用組成物。
- 前記有機酸が、酢酸、ギ酸、グルコン酸、乳酸、シュウ酸、および炭化水素酸から成る群から選択される少なくとも1つを含む、請求項1記載の半導体プロセス用組成物。
- 前記第2の成分を、0.001重量%より多く、かつ2重量%未満の配合量で含む、請求項1記載の半導体プロセス用組成物。
- 前記第1の成分を、50〜99重量%の配合量で含む、請求項1記載の半導体プロセス用組成物。
- 前記第1の成分を、0.5〜30重量%の配合量で含む、請求項1記載の半導体プロセス用組成物。
- 200以上の金属膜に対する金属窒化物膜のエッチング選択比、および100以上の金属酸化物膜に対する金属窒化物膜のエッチング選択比を有する、請求項1記載の半導体プロセス用組成物。
- 請求項1〜10のいずれか1項記載の半導体プロセス用組成物を用いて、有機物質または無機物質を選択的に洗浄する洗浄工程;該半導体プロセス用組成物を用いて、有機物質または無機物質を選択的に除去する除去工程;またはそれらの両方を含む、半導体プロセス。
- 前記洗浄工程または除去工程が、20〜300℃の温度で行われる、請求項11記載の半導体プロセス。
- 前記洗浄工程または除去工程が、金属以外の他の物質;金属を含有する有機物質;金属の酸化物を選択的に洗浄または除去する工程であり、
該金属が、ゲルマニウム(Ge)、ケイ素(Si)、アルミニウム(Al)、チタン(Ti)、ジルコニウム(Zr)、ハフニウム(Hf)およびタンタル(Ta)から成る群から選択される少なくとも1つを含む、請求項11記載の半導体プロセス。
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- 2019-03-04 CN CN201910161445.0A patent/CN110233101B/zh active Active
- 2019-03-05 JP JP2019039152A patent/JP6986526B2/ja active Active
- 2019-03-05 US US16/293,453 patent/US20190276778A1/en not_active Abandoned
- 2019-03-05 TW TW108107297A patent/TWI703170B/zh active
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CN110233101A (zh) | 2019-09-13 |
TW201938622A (zh) | 2019-10-01 |
KR20190105766A (ko) | 2019-09-18 |
CN110233101B (zh) | 2023-05-30 |
JP6986526B2 (ja) | 2021-12-22 |
US20190276778A1 (en) | 2019-09-12 |
KR102069345B1 (ko) | 2020-01-22 |
TWI703170B (zh) | 2020-09-01 |
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