JP2019160958A - Substrate processing device and substrate processing method - Google Patents

Abstract

To provide a substrate processing device which inhibits influence when component liquids of a process liquid are mixed in a discharge nozzle.SOLUTION: A substrate processing device 100 processes a substrate W with a process liquid L. The substrate processing device 100 includes a discharge nozzle 130 and a supply part 140. The discharge nozzle 130 has a discharge port 132 and a discharge passage 134. The discharge port 132 discharges the process liquid L to the substrate W. The discharge passage 134 communicates with the discharge port 132. The supply port 140 communicates with the discharge passage 134 of the discharge nozzle 130. At least a part of the discharge passage 134 is made of quartz. The supply part 140 has a first supply passage 141 and a second supply passage 142. The first supply passage 141 flows a first component liquid L1 of the process liquid L in the discharge passage 134 of the discharge nozzle 130. The second supply passage 142 flows a second component liquid L2 of the process liquid L in the discharge passage 134 of the discharge nozzle 130.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method.

  A substrate processing apparatus for processing a substrate is known. For example, the substrate processing apparatus is used for manufacturing a semiconductor substrate. In a substrate processing apparatus, a resist may be removed by supplying a mixed solution of sulfuric acid and hydrogen peroxide solution to a substrate (see, for example, Patent Document 1).

  In the substrate processing apparatus of Patent Document 1, the nozzle is formed in a three-layer structure in order to suppress ejection defects. In the substrate processing apparatus of Patent Document 1, sulfuric acid and hydrogen peroxide water are mixed in a mixing region provided in piping in the chamber. Further, in the substrate processing apparatus of Patent Document 1, the nozzle includes a first layer pipe made of inner PFA, a second layer pipe made of intermediate stainless steel, and a third layer pipe made of outer PFA. The mixed solution of sulfuric acid and hydrogen peroxide solution passes through the first layer pipe. A space containing air is provided between the first layer pipe and the second layer pipe to insulate between the first layer pipe and the second layer pipe. The third layer pipe covers the second layer pipe, thereby preventing the second layer pipe from being corroded by the external atmosphere.

Japanese Unexamined Patent Publication No. 2017-50387

  In general, it is known that an exothermic reaction occurs when sulfuric acid and hydrogen peroxide are mixed. However, in the substrate processing apparatus described in Patent Document 1, since the mixing region for mixing sulfuric acid and hydrogen peroxide solution is separated from the nozzle, the mixed solution passes through the pipe and reaches the nozzle. The temperature of the substrate may be lowered, and the substrate may not be processed sufficiently. Further, the inventors of the present application have found that a problem may occur when the component liquid of the processing liquid is simply mixed in the discharge nozzle.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing the influence when the component liquid of the processing liquid is mixed in the discharge nozzle.

  According to one aspect of the present invention, a substrate processing apparatus processes a substrate with a processing liquid. The substrate processing apparatus includes a discharge nozzle and a supply unit. The discharge nozzle includes a discharge port that discharges the processing liquid onto the substrate and a discharge channel that communicates with the discharge port. The supply unit communicates with the discharge flow path of the discharge nozzle. At least a part of the discharge channel is formed of quartz. The supply unit includes a first supply channel and a second supply channel. The first supply flow channel causes the first component liquid of the processing liquid to flow through the discharge flow channel of the discharge nozzle. The second supply channel causes the second component liquid of the processing liquid to flow through the discharge channel of the discharge nozzle.

  In the substrate processing apparatus of the present invention, at least a part of the first supply channel and the second supply channel is made of quartz.

  In the substrate processing apparatus of the present invention, the first supply flow path includes a first pipe and a first connection portion that connects the first pipe and the discharge nozzle, and the second supply flow path includes 2 piping, and the 2nd connection part which connects the said 2nd piping and the said discharge nozzle, Each of the said 1st connection part and the said 2nd connection part is formed from quartz.

  In the substrate processing apparatus of the present invention, the first connecting part, the second connecting part, and the discharge nozzle are welded.

  In the substrate processing apparatus of the present invention, the first pipe and the second pipe are formed of a conductive tube.

  In the substrate processing apparatus of the present invention, the discharge flow path has a mixing chamber communicating with the first supply flow path and the second supply flow path.

  In the substrate processing apparatus of the present invention, the discharge flow path further includes a communication part that connects the mixing chamber and the discharge port, and the flow path diameter of the mixing chamber with respect to the processing liquid is the process of the communication part. It is larger than the channel diameter for the liquid.

  In the substrate processing apparatus of the present invention, the discharge nozzle has an upper portion that defines the mixing chamber and a lower portion that defines the connecting portion, and the upper portion and the lower portion are welded.

  In the substrate processing apparatus of the present invention, the first component liquid includes hydrogen peroxide water, the second component liquid includes sulfuric acid, and the first supply flow path is more vertical than the second supply flow path. It is located on the upper side.

  In the substrate processing apparatus of the present invention, the substrate processing apparatus further includes a nozzle support member that supports the discharge nozzle.

  In the substrate processing apparatus of the present invention, the discharge nozzle has a side surface provided with the discharge port and a bottom surface communicating with the side surface, and the bottom surface of the discharge nozzle is provided with the discharge port. It is arranged obliquely with respect to the side surface.

  According to another aspect of the present invention, the substrate processing method is a method of processing a substrate with a processing liquid. The substrate processing method includes a step of supplying a first component liquid of the processing liquid, a step of supplying a second component liquid of the processing liquid, a step of generating the processing liquid, and a step of discharging the processing liquid Including. In the step of supplying the first component liquid of the processing liquid, the first component liquid of the processing liquid is supplied to the discharge flow path of the discharge nozzle via the first supply flow path. In the step of supplying the second component liquid of the processing liquid, the second component liquid of the processing liquid is supplied to the discharge flow path of the discharge nozzle via the second supply flow path. In the step of generating the processing liquid, the processing liquid is generated by mixing the first component liquid and the second component liquid in the discharge flow path of the discharge nozzle. In the step of discharging the processing liquid, the processing liquid is discharged from the discharge port of the discharge nozzle onto the substrate. At least a part of the discharge channel is made of quartz.

  ADVANTAGE OF THE INVENTION According to this invention, the influence at the time of the component liquid of a process liquid mixing in a discharge nozzle can be suppressed.

It is a schematic diagram which shows embodiment of the substrate processing apparatus by this invention. It is a schematic diagram which shows the discharge nozzle and supply part in the substrate processing apparatus of this embodiment. (A)-(d) is a schematic diagram which shows the manufacturing method of the substrate processing apparatus of this embodiment. (A) And (b) is a schematic diagram which shows the discharge nozzle and supply part in the substrate processing apparatus of this embodiment. It is a schematic diagram which shows the substrate processing apparatus of this embodiment. (A) is a schematic diagram which shows the substrate processing apparatus of a comparative example, (b) is the detection result of the particle | grains on the board | substrate processed in the substrate processing apparatus of the comparative example. (A)-(d) is a schematic diagram for demonstrating the mechanism of the impurity outflow in the substrate processing apparatus of a comparative example. (A) is a schematic diagram which shows the substrate processing apparatus of this embodiment, (b) is the detection result of the particle | grains on the board | substrate processed in the substrate processing apparatus shown to (a). (A) is a schematic diagram which shows the substrate processing apparatus of this embodiment, (b) is the detection result of the particle | grains on the board | substrate processed in the substrate processing apparatus shown to (a). (A) is a schematic diagram which shows a part of discharge nozzle and supply part in the substrate processing apparatus of this embodiment, (b) is a schematic diagram which shows the discharge nozzle and nozzle support member in the substrate processing apparatus of this embodiment. is there. It is a schematic diagram which shows embodiment of the substrate processing apparatus by this invention. It is a schematic diagram which shows the substrate processing apparatus of this embodiment. It is a schematic diagram which shows piping of the substrate processing apparatus of this embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof is not repeated.

  An embodiment of a substrate processing apparatus 100 according to the present invention will be described with reference to FIG. FIG. 1 is a schematic diagram of a substrate processing apparatus 100 according to this embodiment. In this specification, in order to facilitate understanding of the invention, an X axis, a Y axis, and a Z axis that are orthogonal to each other may be described. The X axis and the Y axis are parallel to the horizontal direction, and the Z axis is parallel to the vertical direction.

  The substrate processing apparatus 100 processes the substrate W. The substrate processing apparatus 100 processes the substrate W so as to perform at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least a part of the film, and cleaning on the substrate W.

  The substrate W may be, for example, a semiconductor wafer, a liquid crystal display substrate, a plasma display substrate, a field emission display (FED) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask. Substrate, ceramic substrate and solar cell substrate. For example, the substrate W has a substantially disk shape.

  The substrate processing apparatus 100 supplies the processing liquid L to the substrate W and processes the substrate W with the processing liquid L. Here, the substrate processing apparatus 100 processes the substrates W one by one. The substrate W is subjected to at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least part of the film, and cleaning by the treatment liquid L.

  The substrate processing apparatus 100 includes a chamber 110, a spin chuck 120, a discharge nozzle 130, and a supply unit 140. The chamber 110 has a substantially box shape having an internal space. The chamber 110 accommodates the substrate W. Here, the substrate processing apparatus 100 is a single wafer type that processes the substrates W one by one, and the chamber 110 accommodates the substrates W one by one. The substrate W is accommodated in the chamber 110 and processed in the chamber 110. The chamber 110 accommodates the spin chuck 120, the discharge nozzle 130, and the supply unit 140.

  The spin chuck 120 holds the substrate W. The spin chuck 120 rotates the substrate W while holding the substrate W.

  The spin chuck 120 includes a spin base 121, a plurality of chuck pins 122, a rotating shaft 123, and a spin motor 124. For example, the spin base 121 has a disk shape. The spin base 121 is held in a horizontal posture. Each of the plurality of chuck pins 122 holds the substrate W in a horizontal posture above the spin base 121. The plurality of chuck pins 122 are in contact with the peripheral end surface of the substrate W. The rotation shaft 123 extends downward from the central portion of the spin base 121. The spin motor 124 rotates the substrate W and the spin base 121 around the rotation axis AX1 by rotating the rotation shaft 123 in the rotation direction.

  Note that the spin chuck 120 is not limited to a clamping chuck in which a plurality of chuck pins 122 are brought into contact with the peripheral end surface of the substrate W. The spin chuck 120 may be a vacuum chuck that holds the substrate W horizontally by adsorbing the back surface (lower surface) of the substrate W, which is a non-device forming surface, to the upper surface of the spin base 121.

  The processing liquid L is supplied from the discharge nozzle 130 to the substrate W. By supplying the processing liquid L to the substrate W, the substrate W is processed with the processing liquid L. The discharge nozzle 130 extends in the vertical direction (Z direction). The outer shape of the discharge nozzle 130 is a cylindrical shape or a rectangular parallelepiped shape.

  The temperature of the treatment liquid L is preferably higher than room temperature. For example, the temperature of the treatment liquid L is preferably 60 ° C. or higher and 250 ° C. or lower. When the temperature of the processing liquid L is higher than room temperature, the processing time can be made relatively short. However, the temperature of the treatment liquid L may be room temperature, or the temperature of the treatment liquid L may be lower than room temperature.

  For example, the treatment liquid L includes a sulfuric acid / hydrogen peroxide mixture (SPM). Note that the temperature of the SPM supplied to the substrate W is preferably higher than room temperature. For example, the temperature of SPM may be 180 ° C. or higher and 250 ° C. or lower, or 200 ° C. or higher and 240 ° C. or lower.

  Alternatively, the treatment liquid L includes a hydrochloric acid / hydrogen peroxide mixture (SC2). For example, the temperature of SC2 may be 20 ° C. or higher and 100 ° C. or lower, or 40 ° C. or higher and 80 ° C. or lower.

  The supply unit 140 communicates with the discharge nozzle 130 and supplies the component liquid of the processing liquid L to the discharge nozzle 130. Here, the supply unit 140 supplies the first component liquid L1 and the second component liquid L2 of the processing liquid L to the discharge nozzle 130. The first component liquid L1 and the second component liquid L2 are mixed in the discharge nozzle 130, and the processing liquid L in which the first component liquid L1 and the second component liquid L2 are mixed is generated in the discharge nozzle 130.

  The discharge nozzle 130 has a discharge port 132 and a discharge flow path 134. The discharge port 132 discharges the processing liquid L onto the substrate W. The discharge channel 134 communicates with the discharge port 132.

  The supply unit 140 includes a first supply channel 141 and a second supply channel 142. The first supply channel 141 and the second supply channel 142 extend in the horizontal direction. Here, the first supply channel 141 and the second supply channel 142 extend in the Y direction. The first supply channel 141 allows the first component liquid L1 of the processing liquid L to flow through the discharge channel 134 of the discharge nozzle 130. The second supply flow path 142 flows the second component liquid L2 of the processing liquid L to the discharge flow path 134 of the discharge nozzle 130.

  The supply unit 140 may include two tubular members, and the first supply channel 141 and the second supply channel 142 may be formed in the two tubular members, respectively. Alternatively, the supply unit 140 may include a single linear member, and two through holes provided in the single linear member may serve as the first supply channel 141 and the second supply channel 142.

  The first supply channel 141 is connected to a first component liquid supply unit (not shown) that supplies the first component liquid L1. The first component liquid supply unit is typically disposed outside the chamber 110. The second supply channel 142 is connected to a second component liquid supply unit (not shown) that supplies the second component liquid L2. The second component liquid supply unit is typically disposed outside the chamber 110.

  For example, the first supply channel 141 is disposed vertically above the second supply channel 142. In this case, the first component liquid L1 flowing through the first supply flow path 141 flows into the discharge nozzle 130 from above the second component liquid L2 flowing through the second supply flow path 142. However, the height (position in the Z direction) of the first supply channel 141 may be substantially equal to the height (position in the Z direction) of the second supply channel 142.

  In the substrate processing apparatus 100 of this embodiment, the first component liquid L1 flows through the first supply channel 141 and reaches the discharge channel 134 of the discharge nozzle 130. The second component liquid L2 flows through the first supply channel 141 and reaches the discharge channel 134 of the discharge nozzle 130. The first component liquid L1 and the second component liquid L2 are mixed in the discharge flow path 134, and the processing liquid L is generated in the discharge flow path 134.

  In the substrate processing apparatus 100 of the present embodiment, at least a part of the discharge channel 134 is formed from quartz. For this reason, the influence at the time of mixing the 1st component liquid L1 and the 2nd component liquid L2 in the discharge nozzle 130 and producing | generating the process liquid L can be suppressed. For example, at least a part of the discharge flow path 134 on the downstream side of the region where the first component liquid L1 flowing through the first supply flow path 141 and the second component liquid L2 flowing through the second supply flow path 142 are mixed is present. It is preferably formed from quartz. As an example, the entire discharge nozzle 130 may be formed of quartz.

  As shown in FIG. 1, the substrate processing apparatus 100 preferably further includes a nozzle support member 150. The nozzle support member 150 supports the discharge nozzle 130. The discharge nozzle 130 is attached to the tip of the nozzle support member 150. The nozzle support member 150 extends in the horizontal direction. Here, the nozzle support member 150 extends in the Y direction. The nozzle support member 150 preferably supports at least a part of the supply unit 140 as well as the discharge nozzle 130.

  Moreover, as shown in FIG. 1, it is preferable that the substrate processing apparatus 100 further includes a nozzle moving device 150a. The nozzle moving device 150 a moves the discharge nozzle 130 together with the nozzle support member 150. For example, the nozzle moving device 150a rotates the nozzle support member 150 around the rotation axis AX2 extending in the vertical direction around the spin chuck 120 and moves the nozzle support member 150 in the vertical direction along the rotation axis AX2. Let Accordingly, the nozzle support member 150 moves the discharge nozzle 130 in the horizontal direction and / or the vertical direction. For example, the nozzle support member 150 is between a processing position where the processing liquid L discharged from the discharge nozzle 130 is supplied to the upper surface of the substrate W and a retreat position where the discharge nozzle 130 is retreated around the substrate W in plan view. Thus, the discharge nozzle 130 is moved in the horizontal direction.

  Further, as shown in FIG. 1, the substrate processing apparatus 100 preferably further includes a cup 160. The processing liquid L supplied to the substrate W can be recovered by the cup 160. The cup 160 is disposed outward (in a direction away from the rotation axis AX1) from the substrate W held by the spin chuck 120. The cup 160 has a substantially cylindrical shape. The cup 160 surrounds the spin base 121. The cup 160 receives the processing liquid discharged from the substrate W.

  When the processing liquid L is supplied to the substrate W while the spin chuck 120 is rotating the substrate W, the processing liquid L supplied to the substrate W is shaken off around the substrate W. When the processing liquid L is supplied to the substrate W, the upper end portion 160 a of the cup 160 opened upward is disposed above the spin base 121. Therefore, the processing liquid L discharged around the substrate W is received by the cup 160. Then, the processing liquid received by the cup 160 is sent to a collection device or a waste liquid device (not shown).

  Here, with reference to FIG. 2, the discharge nozzle 130 and the supply part 140 in the substrate processing apparatus 100 of this embodiment are demonstrated. FIG. 2 is a schematic diagram of the discharge nozzle 130 and the supply unit 140 in the substrate processing apparatus 100.

  The supply unit 140 includes a first supply channel 141 and a second supply channel 142. The first supply channel 141 allows the first component liquid L1 of the processing liquid L to flow through the discharge channel 134 of the discharge nozzle 130. The second supply flow path 142 flows the second component liquid L2 of the processing liquid L to the discharge flow path 134 of the discharge nozzle 130.

  Here, the supply unit 140 includes a first pipe 140a and a second pipe 140b. The outer peripheral surface of the first pipe 140a extends in the longitudinal direction. Moreover, the through-hole provided in the 1st piping 140a also extends in the longitudinal direction. The first pipe 140a is a pipe in which each of the outer peripheral surface and the through hole extends in the longitudinal direction. Here, the outer peripheral surface and the through hole of the first pipe 140a extend in the Y direction. The through hole of the first pipe 140a is a first supply channel 141 through which the first component liquid L1 flows.

  Similarly, the outer peripheral surface of the second pipe 140b extends in the longitudinal direction. In addition, a through hole provided in the second pipe 140b also extends in the longitudinal direction. The second pipe 140b is a pipe in which each of the outer peripheral surface and the through hole extends in the longitudinal direction. Here, the outer peripheral surface and the through hole of the second pipe 140b extend in the Y direction. The through hole of the second pipe 140b is a second supply flow path 142 through which the second component liquid L2 flows.

  As described above with reference to FIG. 1, the discharge nozzle 130 has the discharge port 132 and the discharge flow path 134. As shown in FIG. 2, the discharge flow path 134 has a mixing chamber 134a, a communication part 134b, a first introduction part 134c, and a second introduction part 134d.

  The mixing chamber 134a extends in the vertical direction (Z direction). The mixing chamber 134a is disposed vertically above the connecting portion 134b.

  The communication part 134b connects the discharge port 132 and the mixing chamber 134a. The connecting part 134b extends in the vertical direction (Z direction).

  Two through holes penetrating the side wall are provided in the side wall of the mixing chamber 134a. One of the two through holes is a first introduction part 134c for flowing the first component liquid L1, and the other of the two through holes is a second introduction part 134d for flowing the second component liquid L2. The first introduction part 134c and the second introduction part 134d extend in the horizontal direction in the same manner as the first pipe 140a and the second pipe 140b. Here, the first introduction part 134c and the second introduction part 134d extend in the Y direction.

  The discharge nozzle 130 includes an upper part 130a and a lower part 130b. The upper part 130a is located vertically above the lower part 130b. The upper part 130a has a cylindrical shape with a hole in the bottom. The mixing chamber 134a is defined by a hole in the upper portion 130a. For example, the upper portion 130a is provided with a cylindrical hole. The first introduction part 134c and the second introduction part 134d are provided on the side wall of the upper part 130a. The lower portion 130b has a cylindrical shape provided with a through hole. The connection part 134b is prescribed | regulated by the through-hole provided in the lower part 130b.

  A first pipe 140 a and a second pipe 140 b are attached to the outer periphery of the upper part 130 a of the discharge nozzle 130. The first supply channel 141 of the first pipe 140a communicates with the mixing chamber 134a through the first introduction part 134c of the discharge nozzle 130. The second supply flow path 142 of the second pipe 140b communicates with the mixing chamber 134a via the second introduction part 134d of the discharge nozzle 130.

  The first component liquid L1 flows through the first supply channel 141 of the first pipe 140a and is introduced into the mixing chamber 134a through the first introduction part 134c of the discharge nozzle 130. The second component liquid L2 flows through the second supply flow path 142 of the second pipe 140b and is introduced into the mixing chamber 134a through the second introduction part 134d of the discharge nozzle 130. The first component liquid L1 and the second component liquid L2 are mixed in the mixing chamber 134a, and the processing liquid L in which the first component liquid L1 and the second component liquid L2 are mixed is generated in the mixing chamber 134a. The processing liquid L flows from the mixing chamber 134 a to the discharge port 132 through the communication unit 134 b and is discharged from the discharge port 132 onto the substrate W.

  The flow path diameter (the length in the Y direction) for the processing liquid L in the mixing chamber 134a is larger than the flow path diameter (the length in the Y direction) for the processing liquid L in the connecting portion 134b. For example, the diameter of the flow path for the treatment liquid L in the mixing chamber 134a is 3 mm or more and 50 mm or less, and the diameter of the flow path for the treatment liquid L in the communication section 134b is 2 mm or more and 45 mm or less. In one example, the channel diameter for the processing liquid L in the mixing chamber 134a is about 5 mm or more and 20 mm or less, and the channel diameter for the processing liquid L in the communication part 134b is about 3 mm or more and 18 mm or less.

  Note that the diameter (the length in the Y direction) of the discharge port 132 is substantially equal to the diameter of the flow path (the length in the Y direction) with respect to the processing liquid L of the connecting portion 134b. For example, the diameter of the discharge port 132 is 2 mm or more and 45 mm or less, and the channel diameter of the communication part 134b with respect to the processing liquid L is 2 mm or more and 45 mm or less. In one example, the diameter of the discharge port 132 is about 3 mm or more and 18 mm or less, and the flow path diameter of the communication part 134b with respect to the processing liquid L is about 3 mm or more and 18 mm or less.

  The shape and outer diameter of the upper part 130a are preferably substantially equal to the shape and outer diameter of the lower part 130b. For example, the upper part 130a has a columnar shape provided with a hole, and the lower part 130b has a cylindrical shape provided with a through hole. For example, the outer diameter of the upper part 130a is 5 mm or more and 55 mm or less, and the outer diameter of the lower part 130b is 5 mm or more and 55 mm or less. As an example, the outer diameter of the upper part 130a is about 10 mm or more and 25 mm or less, and the outer diameter of the lower part 130b is about 10 mm or more and 25 mm or less.

  Further, the flow path diameter (length in the Z direction) of the first introduction part 134c with respect to the first component liquid L1 is smaller than the flow path diameter (length in the Y direction) of the mixing chamber 134a with respect to the processing liquid L. For example, the channel diameter for the first component liquid L1 of the first introduction part 134c is about 1 mm or more and 10 mm or less, and the channel diameter for the treatment liquid L of the mixing chamber 134a is 3 mm or more and 30 mm or less. In one example, the channel diameter for the first component liquid L1 of the first introduction part 134c is about 2 mm or more and 6 mm or less, and the channel diameter for the treatment liquid L of the mixing chamber 134a is about 5 mm or more and 20 mm or less.

  Similarly, the flow path diameter (the length in the Z direction) for the second component liquid L2 of the second introduction part 134d is smaller than the flow path diameter (the length in the Y direction) for the processing liquid L in the mixing chamber 134a. For example, the channel diameter for the first component liquid L1 of the second introduction part 134d is about 1 mm or more and 10 mm or less, and the channel diameter for the treatment liquid L of the mixing chamber 134a is 3 mm or more and 30 mm or less. In one example, the channel diameter for the second component liquid L2 of the second introduction part 134d is about 2 mm or more and 6 mm or less, and the channel diameter for the treatment liquid L of the mixing chamber 134a is about 5 mm or more and 20 mm or less.

  As described above, in the substrate processing apparatus 100 of the present embodiment, at least a part of the discharge flow path 134 in the discharge nozzle 130 is formed from quartz. In addition, the discharge flow path 134 is formed of quartz on the downstream side of the region where the first component liquid L1 flowing through the first supply flow path 141 and the second component liquid L2 flowing through the second supply flow path 142 are mixed. It is preferable. For example, it is preferable that the mixing chamber 134a and the communication part 134b of the discharge channel 134 are formed of quartz. Further, in the discharge flow path 134 of the discharge nozzle 130, the upper part 130a that defines the mixing chamber 134a and the lower part 130b that defines the connecting part 134b may be welded.

  The first pipe 140a that forms the first supply flow path 141 is disposed vertically above the second pipe 140b that forms the second supply flow path 142. The first component liquid L1 flowing through the first supply flow path 141 is preferably a liquid that is more suitable for cleaning the substrate W and / or the discharge nozzle 130 than the second component liquid L2 flowing through the second supply flow path 142. By flowing the first component liquid L1 without flowing the second component liquid L2, the substrate W and / or the discharge nozzle 130 can be suitably cleaned with the first component liquid L1. For example, the first component liquid L1 is preferably a liquid having a lower degree of permeability with respect to the discharge nozzle 130 than the second component liquid L2.

  Here, with reference to FIG. 1 and FIG. 3, the manufacturing method of the substrate processing apparatus 100 of this embodiment is demonstrated. FIG. 3A to FIG. 3D are schematic views showing a method for manufacturing the substrate processing apparatus 100.

  As shown in FIG. 3A, a discharge nozzle 130 is prepared. The discharge nozzle 130 has a discharge port 132 and a discharge flow path 134. The discharge flow path 134 has a mixing chamber 134a, a communication part 134b, a first introduction part 134c, and a second introduction part 134d. The mixing chamber 134a is located upstream of the connecting part 134b, and the discharge port 132 is located downstream of the connecting part 134b.

  The discharge nozzle 130 includes an upper part 130a and a lower part 130b. The upper part 130a is located vertically above the lower part 130b. The upper part 130a has a cylindrical shape with a hole in the bottom. The mixing chamber 134a is defined by a hole in the upper portion 130a. The lower portion 130b has a cylindrical shape provided with a through hole. The connection part 134b is prescribed | regulated by the through-hole provided in the lower part 130b.

  As shown in FIG. 3B, a first supply channel 141 and a second supply channel 142 are prepared. The first supply channel 141 and the second supply channel 142 may be formed in different tubular members, respectively. For example, a first pipe 140a having a first supply channel 141 and a second pipe 140b having a second supply channel 142 may be prepared. For example, the first pipe 140a and the second pipe 140b are made of resin. As an example, the first pipe 140a and the second pipe 140b are formed of a fluororesin, typically a perfluoroalkoxy alkane (PFA). Alternatively, the first supply channel 141 and the second supply channel 142 may be formed as different through holes of a single member.

  As shown in FIG. 3C, the supply unit 140 is connected to the discharge nozzle 130. For example, the first pipe 140a and the second pipe 140b are connected to the outer periphery of the upper part 130a of the discharge nozzle 130. Accordingly, the first supply flow path 141 of the first pipe 140a communicates with the mixing chamber 134a via the first introduction part 134c of the discharge nozzle 130. The second supply flow path 142 of the second pipe 140b communicates with the mixing chamber 134a via the second introduction part 134d of the discharge nozzle 130.

  Thereafter, as shown in FIG. 3D, the discharge nozzle 130 and the supply unit 140 are disposed in the chamber 110 in which the spin chuck 120 is mounted in advance. A nozzle support member 150 and a cup 160 may be set in the chamber 110 in advance.

  Further, the first supply channel 141 is connected to the first component solution supply unit that supplies the first component solution L1, and the second supply channel 142 is connected to the second component solution supply unit that supplies the second component solution L2. To do. Note that the connection between the first component liquid supply unit and the first supply flow path 141 may be performed before the first supply flow path 141 is connected to the discharge nozzle 130. Further, the connection between the second component liquid supply unit and the second supply flow path 142 may be performed before the second supply flow path 142 is connected to the discharge nozzle 130. The substrate processing apparatus 100 can be manufactured as described above.

  In the above description with reference to FIGS. 2 and 3, each of the first pipe 140a and the second pipe 140b is directly connected to the discharge nozzle 130, but the present invention is not limited to this. The 1st piping 140a and the 2nd piping 140b may be connected with discharge nozzle 130 via another member.

  Here, the discharge nozzle 130 and the supply unit 140 in the substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. 4A and 4B are schematic views showing the discharge nozzle 130 and the supply unit 140 in the substrate processing apparatus 100. FIG.

  As shown in FIG. 4A, the supply unit 140 may further include a connecting member 140c in addition to the first pipe 140a and the second pipe 140b. The connecting member 140 c covers the discharge nozzle 130. Here, a hole is provided below the connecting member 140c, and the discharge nozzle 130 is mounted in the hole of the connecting member 140c. The first pipe 140a and the second pipe 140b are attached to the outer periphery of the connecting member 140c. For example, the connecting member 140c is formed from resin. In one example, the connecting member 140c is made of PFA.

  The outer peripheral surface and the through hole of the first pipe 140a extend in the longitudinal direction. The through hole of the first pipe 140a is a flow path 141a. For example, the first pipe 140a is made of resin. In one example, the first pipe 140a is formed from PFA.

  Further, the outer peripheral surface and the through hole of the second pipe 140b extend in the longitudinal direction. The through hole of the second pipe 140b is a flow path 142b. For example, the second pipe 140b is formed from a resin. In one example, the second pipe 140b is formed from PFA. In addition, it is preferable that the 2nd piping 140b is formed from the same material as the 1st piping 140a.

  Two through holes penetrating the side wall are provided in the side wall of the connecting member 140c. One through-hole of the two through-holes of the connecting member 140c is a flow path 141c for flowing the first component liquid L1, and the other through-hole is a flow path 142c for flowing the second component liquid L2. The first supply channel 141 of the supply unit 140 is formed by the channel 141a of the first pipe 140a and the channel 141c of the connecting member 140c. The length of the channel 141a is larger than the length of the channel 141c. The second supply channel 142 of the supply unit 140 is formed by the channel 142b of the second pipe 140b and the channel 142c of the connecting member 140c. The length of the flow path 142b is larger than the length of the flow path 142c.

  In addition, it is preferable that the connection member 140c is formed from the same material as the 1st piping 140a and the 2nd piping 140b. In this case, the connection between the first pipe 140a and the connecting member 140c and the connection between the second pipe 140b and the connecting member 140c can be facilitated.

  In the configuration illustrated in FIG. 4A, the supply unit 140 includes the connection member 140 c that covers the discharge nozzle 130, and the flow path 141 c and the flow path 142 c are provided in the first connection pipe 140 d. The present invention is not limited to this.

  As shown in FIG. 4B, the supply unit 140 may further include a first connection pipe 140d and a second connection pipe 140e in addition to the first pipe 140a and the second pipe 140b.

  The outer peripheral surface of the first pipe 140a extends in the longitudinal direction (Y direction). Moreover, the through-hole provided in the 1st piping 140a also extends in a longitudinal direction (Y direction). The through hole of the first pipe 140a serves as a flow path 141a through which the first component liquid L1 flows. The 1st piping 140a is formed from resin, for example. In one example, the first pipe 140a is formed from PFA.

  Further, the outer peripheral surface of the second pipe 140b extends in the longitudinal direction (Y direction). Further, the through hole provided in the second pipe 140b also extends in the longitudinal direction (Y direction). The through hole of the second pipe 140b becomes a flow path 142b through which the second component liquid L2 flows. The second pipe 140b is made of, for example, resin. In one example, the second pipe 140b is formed from PFA. In addition, it is preferable that the 2nd piping 140b is formed from the same material as the 1st piping 140a.

  The outer peripheral surface of the first connecting pipe 140d extends in the longitudinal direction (Y direction). The through hole provided in the first connecting pipe 140d also extends in the longitudinal direction (Y direction). The through hole of the first connecting pipe 140d is a flow path 141d through which the first component liquid L1 flows.

  The outer peripheral surface of the second connecting pipe 140e extends in the longitudinal direction (Y direction). The through hole provided in the second connecting pipe 140e also extends in the longitudinal direction (Y direction). The through hole of the second connecting pipe 140e is a flow path 142e through which the second component liquid L2 flows.

  The flow path 141d of the first connection pipe 140d communicates with the flow path 141a of the first pipe 140a. The first supply channel 141 of the supply unit 140 is formed by a channel 141a of the first pipe 140a and a channel 141d of the first connection pipe 140d. The length of the channel 141a is larger than the length of the channel 141d.

  Further, the flow path 142e of the second connection pipe 140e communicates with the flow path 142b of the second pipe 140b. The second supply channel 142 of the supply unit 140 is formed by a channel 142b of the second pipe 140b and a channel 142e of the second connection pipe 140e. The length of the flow path 142b is larger than the length of the flow path 142e.

  In addition, it is preferable that a joint 140f is disposed between the first pipe 140a and the first connection pipe 140d, and the joint 140f joins the first pipe 140a and the first connection pipe 140d. Similarly, a joint 140g is disposed between the second pipe 140b and the second connection pipe 140e, and the joint 140g preferably joins the second pipe 140b and the second connection pipe 140e. Typically, joint 140f and joint 140g are formed from conductive members.

  The first connecting pipe 140d and the second connecting pipe 140e are formed separately. The first connecting pipe 140d and the second connecting pipe 140e are preferably formed of quartz, like the discharge nozzle 130. In this case, it is preferable that the first connecting pipe 140d and the second connecting pipe 140e are welded to the discharge nozzle 130, and the first connecting pipe 140d and the second connecting pipe 140e are formed integrally with the discharge nozzle 130.

  In addition, when the 1st connection pipe 140d and the 2nd connection pipe 140e are formed from quartz, it is preferable that each of the 1st piping 140a and the 2nd piping 140b is formed from a conductive tube. When the discharge nozzle 130, the first connecting pipe 140d, and the second connecting pipe 140e are made of quartz, quartz exhibits a high electrical resistivity and a high dielectric constant, and therefore the first pipe 140a and the second pipe 140b are insulators. If so, the discharge nozzle 130, the first connecting pipe 140d, and the second connecting pipe 140e may be excessively charged. However, since each of the first pipe 140a and the second pipe 140b is formed of a conductive tube, excessive charging of the discharge nozzle 130, the first connecting pipe 140d, and the second connecting pipe 140e can be suppressed.

  The substrate processing apparatus 100 of the present embodiment is particularly preferably used when the processing liquid L is generated using the first component liquid L1 and the second component liquid L2 that generate an exothermic reaction during mixing. For example, when the first component liquid L1 and the second component liquid L2 contain hydrogen peroxide solution and sulfuric acid, a mixed solution of sulfuric acid and hydrogen peroxide water is generated as the treatment liquid L from the first component liquid L1 and the second component liquid L2. It is particularly preferable to use the substrate processing apparatus 100 of the present embodiment.

  Here, with reference to FIG. 5, the supply of the sulfuric acid / hydrogen peroxide mixture liquid SPM as the processing liquid L to the substrate W will be described. FIG. 5 is a schematic diagram showing the substrate processing apparatus 100 of the present embodiment. In the substrate processing apparatus 100 shown in FIG. 5, the first supply flow path 141 causes the hydrogen peroxide solution La to flow as the first component liquid L1, and the second supply flow path 142 causes the sulfuric acid Lb to flow as the second component liquid L2. Except for the substrate processing apparatus 100 described above with reference to FIG. For this reason, redundant description is omitted for the purpose of avoiding redundancy.

  The supply unit 140 includes a first supply channel 141 and a second supply channel 142. The first supply channel 141 flows the hydrogen peroxide solution La as the first component liquid L1, and the second supply channel 142 flows the sulfuric acid Lb as the second component liquid L2.

  Here, the supply unit 140 supplies the hydrogen peroxide solution La and the sulfuric acid Lb to the discharge nozzle 130. The hydrogen peroxide solution La and the sulfuric acid Lb are mixed in the discharge nozzle 130, and the sulfuric acid hydrogen peroxide solution mixed solution SPM is generated as the processing solution L. An exothermic reaction occurs when the hydrogen peroxide solution La and the sulfuric acid Lb are mixed. The discharge nozzle 130 discharges the sulfuric acid hydrogen peroxide solution mixed solution SPM onto the substrate W, and the substrate W is treated with the sulfuric acid hydrogen peroxide solution mixed solution SPM. Thereby, foreign matters such as a resist film on the substrate W are removed from the substrate W. In this specification, processing the substrate W with the sulfuric acid / hydrogen peroxide solution mixed solution SPM may be referred to as SPM processing. In this specification, the sulfuric acid hydrogen peroxide solution mixed solution SPM may be simply referred to as a mixed solution SPM.

  The first supply channel 141 is arranged vertically above the second supply channel 142. In this case, the discharge nozzle 130 can be cleaned using the hydrogen peroxide solution La flowing through the first supply channel 141. In particular, when the second supply channel 142 flows the sulfuric acid Lb, if the sulfur contained in the sulfuric acid Lb remains in the discharge nozzle 130, the processing of the substrate W may be adversely affected. However, in the substrate processing apparatus 100 of the present embodiment, the discharge nozzle 130 can be cleaned using the hydrogen peroxide solution La flowing through the first supply channel 141 disposed vertically above the second supply channel 142, Sulfur residue can be suppressed.

  As described above, in the substrate processing apparatus 100 of this embodiment, at least a part of the discharge nozzle 130 is formed from quartz. An exothermic reaction occurs when the hydrogen peroxide solution La and the sulfuric acid Lb are mixed, but since at least a part of the discharge nozzle 130 is made of quartz, the hydrogen peroxide solution La and the sulfuric acid Lb are mixed in the discharge nozzle 130. The influence at the time of doing can be suppressed.

  In addition, as shown in FIG. 5, it is preferable that the substrate processing apparatus 100 further includes a first component liquid valve 145a and a second component liquid valve 145b. The first component liquid valve 145 a is attached to the first supply channel 141. The first component liquid valve 145a switches between supply and stoppage of the hydrogen peroxide solution La from the first supply channel 141 to the discharge nozzle 130. When the first component liquid valve 145a is opened, the hydrogen peroxide solution La is supplied from the first supply flow path 141 to the discharge nozzle 130.

  The second component liquid valve 145 b is attached to the second supply channel 142. The second component liquid valve 145b switches between supply and stop of the supply of sulfuric acid Lb from the second pipe 140b to the discharge nozzle 130. When the second component liquid valve 145b is opened, the sulfuric acid Lb is supplied from the second supply channel 142 to the discharge nozzle 130.

  Note that the sulfuric acid Lb may flow through the second supply channel 142 while being heated to a temperature higher than room temperature. For example, as illustrated in FIG. 5, the substrate processing apparatus 100 preferably further includes a temperature controller 146. The temperature controller 146 is attached to the second supply channel 142. The temperature controller 146 adjusts the temperature of the sulfuric acid Lb that passes through the temperature controller 146. The temperature controller 146 is, for example, a heater that heats the sulfuric acid Lb. The temperature controller 146 may be disposed in the chamber 110 or may be disposed outside the chamber 110. The temperature of the sulfuric acid Lb flowing through the second supply channel 142 is, for example, 180 ° C. or higher and 200 ° C. or lower.

  As described above, the hydrogen peroxide solution La and the sulfuric acid Lb are mixed in the discharge nozzle 130, and the mixed liquid SPM is generated as the processing liquid L. An exothermic reaction occurs when the hydrogen peroxide solution La and the sulfuric acid Lb are mixed. For example, the temperature of the mixed solution SPM rises to 200 ° C. or higher and 240 ° C. or lower.

  Hereinafter, advantages of the substrate processing apparatus 100 of this embodiment shown in FIG. 5 in comparison with the substrate processing apparatus 800 of the comparative example will be described. FIG. 6A is a schematic diagram showing a substrate processing apparatus 800 of a comparative example. The substrate processing apparatus 800 of the comparative example has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. 5 except that the discharge nozzle 830 is formed of resin. For this reason, redundant description is omitted for the purpose of avoiding redundancy.

  The substrate processing apparatus 800 includes a chamber 810, a spin chuck 820, a discharge nozzle 830, and a supply unit 840. In the substrate processing apparatus 800, the discharge nozzle 830 is formed from PFA.

  In the substrate processing apparatus 800 of the comparative example, the hydrogen peroxide solution La flows through the first supply channel 841 and reaches the discharge channel 834 of the discharge nozzle 830. The temperature of the hydrogen peroxide solution La flowing through the first supply channel 841 is room temperature. Further, the sulfuric acid Lb flows through the second supply channel 842 and reaches the discharge channel 834 of the discharge nozzle 830. The temperature of the sulfuric acid Lb flowing through the second supply channel 842 is higher than room temperature. In one example, the temperature of the sulfuric acid Lb flowing through the second supply channel 842 is 180 ° C. The hydrogen peroxide solution La and the sulfuric acid Lb are mixed in the discharge channel 834, and the mixed liquid SPM is generated in the discharge channel 834.

  Also in the substrate processing apparatus 800, the supply unit 840 supplies the hydrogen peroxide solution La and the sulfuric acid Lb to the discharge nozzle 830. The hydrogen peroxide solution La and the sulfuric acid Lb are mixed in the discharge nozzle 830, and a mixed solution SPM is generated as the processing solution L. The discharge nozzle 830 discharges the mixed solution SPM onto the substrate W, and the substrate W is subjected to SPM treatment with the mixed solution SPM.

  FIG. 6B is a detection result of particles on the substrate W processed in the substrate processing apparatus 800 of the comparative example. Here, the pre-dispensing process was performed on the substrates W1 to W5 immediately before the SPM process, and then the SPM process was performed. Immediately after completing the SPM process for the previous substrate, the SPM process for the next substrate was started. Thereafter, the substrate processing apparatus 800 was left for 12 hours, and the substrates W6 to W10 were subjected to SPM processing without performing pre-dispensing processing. Again, after completing the SPM process for the previous substrate, the SPM process for the next substrate was started immediately. For each of the substrates W1 to W10, the number of particles having a particle size of 26 nm or more, particles having a particle size of 30 nm or more, and particles having a particle size of 45 nm or more was counted.

  As shown in FIG. 6B, in the substrates W1 to W5 subjected to the pre-dispensing treatment, the number of particles having a particle size of 26 nm or more, particles having a particle size of 30 nm or more, and particles having a particle size of 45 nm or more was small. On the other hand, as shown in FIG. 6B, in the substrates W6 to W10 that were not subjected to the pre-dispensing treatment, the number of particles having a particle size of 26 nm or more, particles having a particle size of 30 nm or more, and particles having a particle size of 45 nm or more was slightly different. Increased. In particular, in the substrate W6 subjected to the first SPM treatment after being left for 12 hours, the number of particles on the substrate W6 significantly increased as compared with the number of particles on the substrates W1 to W5. Note that when energy dispersive X-ray spectroscopy (EDS) was performed on the particles on the substrate, the particles contained a component derived from the discharge nozzle 830. For this reason, it is considered that the particles on the substrate are slightly dissolved by the discharge nozzle 830 and flowed out as impurities.

  Here, with reference to FIG. 7, the mechanism of the impurity outflow assumed in the substrate processing apparatus 800 of the comparative example will be described. FIGS. 7A to 7D are schematic partial enlarged views in which the discharge nozzle 830 in the substrate processing apparatus 800 of the comparative example is enlarged.

  As shown in FIG. 7A, when the substrate W is processed with the mixed liquid SPM in the substrate processing apparatus 800, the high-temperature mixed liquid SPM flows through the discharge flow path 834 of the discharge nozzle 830, and the discharge nozzle 830 moves to the mixed liquid SPM. Is discharged onto the substrate W. Note that when the discharge nozzle 830 is formed of resin, a part of the component of the mixed liquid SPM flowing through the discharge nozzle 830 penetrates into the discharge nozzle 830.

  As shown in FIG. 7B, even when the SPM process is completed, some components of the mixed liquid SPM are retained while penetrating into the discharge nozzle 830.

  As shown in FIG. 7C, when left for a long time, the component of the mixed liquid SPM that has permeated the inside of the discharge nozzle 830 gradually dissolves the inside of the discharge nozzle 830. However, the dissolved component remains infiltrated into the discharge nozzle 830.

  As shown in FIG. 7D, when the SPM process is performed after leaving for a long time (typically, when the supply of the mixed liquid SPM to the next substrate W is started), the high-temperature mixed liquid SPM is used. Flows through the discharge flow path 834 of the discharge nozzle 830. In this case, the component of the mixed solution SPM in which the discharge nozzle 830 is partially dissolved inside the discharge nozzle 830 flows out from the inside of the discharge nozzle 830 and becomes an impurity of the substrate W.

  As shown in FIG. 7B, even if the discharge nozzle 830 is washed with another liquid after the SPM process is performed on one substrate and before the next substrate is subjected to the SPM process, The component of the mixed liquid SPM that has permeated does not come out to the outside. However, when the mixed liquid SPM heated to a predetermined processing temperature is flowed again to the discharge nozzle 830, the components of the mixed liquid SPM partially dissolved in the discharge nozzle 830 inside the discharge nozzle 830 are transferred from the inside of the discharge nozzle 830 to the outside. It flows out and becomes an impurity on the substrate W.

  On the other hand, in the substrate processing apparatus 100 of this embodiment shown in FIG. 5, at least a part of the discharge flow path 134 in the discharge nozzle 130 is formed of quartz. For this reason, unlike the substrate processing apparatus 800 of the comparative example, the mixed liquid SPM hardly penetrates into the discharge nozzle 130. Therefore, in the substrate processing apparatus 100 of this embodiment, the outflow of impurities can be suppressed.

  FIG. 8A is a schematic diagram showing the substrate processing apparatus 100 of the present embodiment. As shown in FIG. 8A, in the substrate processing apparatus 100, the supply unit 140 includes a first pipe 140a, a second pipe 140b, and a connecting member 140c. In the substrate processing apparatus 100 shown in FIG. 8A, the discharge nozzle 130 and the supply unit 140 have the same configuration as the discharge nozzle 130 and the supply unit 140 shown in FIG.

  In the substrate processing apparatus 100 of the present embodiment, the discharge nozzle 130 is made of quartz. The connecting member 140 c covers the discharge nozzle 130. Here, the connecting member 140c is provided with a hole having a lower opening, and the discharge nozzle 130 is mounted in the hole of the connecting member 140c. The first pipe 140a and the second pipe 140b are attached to the outer periphery of the connecting member 140c. For example, the connecting member 140c is formed from resin. The connecting member 140c is made of PFA.

  The outer peripheral surface and the through hole of the first pipe 140a extend in the longitudinal direction. The through hole of the first pipe 140a is a flow path 141a. The first pipe 140a is formed from PFA. Further, the outer peripheral surface and the through hole of the second pipe 140b extend in the longitudinal direction. The through hole of the second pipe 140b is a flow path 142b. The second pipe 140b is formed from PFA.

  FIG. 8B shows a detection result of particles on the substrate W processed in the substrate processing apparatus 100 shown in FIG. Here, the pre-dispensing process was performed on the substrates W1 to W5 immediately before the SPM process, and then the SPM process was performed. Immediately after completing the SPM process for the previous substrate, the SPM process for the next substrate was started. Then, after leaving the substrate processing apparatus 100 to stand for 12 hours, the substrates W6 to W10 were subjected to SPM processing without performing pre-dispensing processing. Again, after completing the SPM process for the previous substrate, the SPM process for the next substrate was started immediately. For each of the substrates W1 to W10, the number of particles having a particle size of 26 nm or more, particles having a particle size of 30 nm or more, and particles having a particle size of 45 nm or more was counted.

  As shown in FIG. 8B, in the substrates W1 to W5 subjected to the pre-dispensing treatment, the number of particles having a particle size of 26 nm or more, particles having a particle size of 30 nm or more, and particles having a particle size of 45 nm or more was small. On the other hand, as shown in FIG. 8B, in the substrates W6 to W10 that were not subjected to the pre-dispensing treatment, the number of particles having a particle size of 26 nm or more, particles having a particle size of 30 nm or more, and particles having a particle size of 45 nm or more was slightly different. Increased. In addition, in the substrate W6 subjected to the first SPM treatment after 12 hours, the number of particles on the substrate W6 did not increase so much as compared with the number of particles on the substrates W1 to W5.

  As can be understood from a comparison between FIG. 6B and FIG. 8B, in the substrate processing apparatus 100 of the present embodiment, the discharge nozzle 130 is formed of quartz. For this reason, even if the mixed liquid SPM flows through the discharge nozzle 130, the mixed liquid SPM hardly penetrates into the discharge flow path 134 of the discharge nozzle 130, so that it is considered that impurities are less likely to flow out even if left for a long time. It is done. As described above, in the substrate processing apparatus 100 of the present embodiment, the discharge nozzle 130 is made of quartz, so that the outflow of impurities can be suppressed.

  FIG. 9A is a schematic diagram showing the substrate processing apparatus 100 of this embodiment. The supply unit 140 includes a first pipe 140a, a second pipe 140b, a first connection pipe 140d, and a second connection pipe 140e. In the substrate processing apparatus 100 shown in FIG. 9A, the discharge nozzle 130 and the supply unit 140 have the same configuration as the discharge nozzle 130 and the supply unit 140 shown in FIG. 4B.

  The outer peripheral surface of the first pipe 140a extends in the longitudinal direction (Y direction). Moreover, the through-hole provided in the 1st piping 140a also extends in a longitudinal direction (Y direction). The through hole of the first pipe 140a becomes the flow path 141a. The first pipe 140a is formed from PFA.

  Further, the outer peripheral surface of the second pipe 140b extends in the longitudinal direction (Y direction). Further, the through hole provided in the second pipe 140b also extends in the longitudinal direction (Y direction). The through hole of the second pipe 140b becomes the flow path 142b. The second pipe 140b is made of, for example, resin. In one example, the second pipe 140b is formed from PFA.

  The outer peripheral surface of the first connecting pipe 140d extends in the longitudinal direction (Y direction). The through hole provided in the first connecting pipe 140d also extends in the longitudinal direction (Y direction). The first connecting pipe 140d is made of quartz.

  The outer peripheral surface of the second connecting pipe 140e extends in the longitudinal direction (Y direction). The through hole provided in the second connecting pipe 140e also extends in the longitudinal direction (Y direction). The second connecting pipe 140e is made of quartz. The first connecting pipe 140d and the second connecting pipe 140e are welded to the discharge nozzle 130, and the first connecting pipe 140d and the second connecting pipe 140e are formed integrally with the discharge nozzle 130.

  FIG. 9B shows a detection result of particles on the substrate W processed in the substrate processing apparatus 100 shown in FIG. It is the detection result of the particle | grains on the board | substrate W processed in the substrate processing apparatus 100 shown to Fig.9 (a). Here, after performing the pre-dispensing process immediately before the SPM process on the substrates W1 to W3, the SPM process was performed. Immediately after completing the SPM process for the previous substrate, the SPM process for the next substrate was started. Then, after leaving the substrate processing apparatus 800 for 12 hours, the substrates W4 to W6 were subjected to SPM processing without performing pre-dispensing processing. Again, after completing the SPM process for the previous substrate, the SPM process for the next substrate was started immediately. For each of the substrates W1 to W10, the number of particles having a particle size of 26 nm or more, particles having a particle size of 30 nm or more, and particles having a particle size of 45 nm or more was counted.

  As shown in FIG. 9B, the number of particles having a particle size of 26 nm or more, a particle size of 30 nm or more, and a particle size of 45 nm or more was small in each of the substrates W1 to W3 subjected to the pre-dispensing treatment. On the other hand, as shown in FIG. 9B, in the substrates W4 to W6 that were not subjected to the pre-dispensing treatment, the particles having a particle size of 26 nm or more, the particles having a particle size of 30 nm or more, and the particles having a particle size of 45 nm or more increased slightly. . However, in the substrate W4 that has been subjected to the first SPM treatment after 12 hours, the number of particles on the substrate W4 hardly increased compared to the number of particles on the substrates W1 to W3.

  As understood from the comparison between FIG. 6B and FIG. 9B, in the substrate processing apparatus 100 of this embodiment, the substrate W4 that has been subjected to the first SPM processing after 12 hours has passed. The number of particles on W hardly increased. In the substrate processing apparatus 100 of the present embodiment, not only the discharge nozzle 130 but also the first connection pipe 140d and the second connection pipe 140e connected to the discharge nozzle 130 among the first supply flow path 141 and the second supply flow path 142. Is formed from quartz. For this reason, even if the mixed liquid SPM flows through the discharge nozzle 130, the mixed liquid SPM hardly penetrates into the discharge flow path 134, the first supply flow path 141, and the second supply flow path 142 of the discharge nozzle 130. Therefore, in the substrate processing apparatus 100 of this embodiment, it is considered that impurities are less likely to flow out even if left for a long time. As described above, in the substrate processing apparatus 100 of the present embodiment, the discharge nozzle 130, the first connecting pipe 140d, and the second connecting pipe 140e are formed of quartz, so that the outflow of impurities can be suppressed.

  In the above description with reference to FIGS. 1 to 5, FIG. 8A and FIG. 9A, the outer shape of the discharge nozzle 130 is a cylindrical shape, but the present invention is not limited to this. The outer shape of the discharge nozzle 130 may not be a cylindrical shape.

  In the above description with reference to FIGS. 1 to 5, FIG. 8A and FIG. 9A, the discharge flow path 134 of the discharge nozzle 130 extends linearly along the vertical direction. The invention is not limited to this. The discharge flow path 134 may be bent.

  FIG. 10A is a schematic diagram showing a part of the discharge nozzle 130 and the supply unit 140 in the substrate processing apparatus 100 of the present embodiment. In FIG. 10, the discharge nozzle 130 and a part of the supply unit 140 are integrally formed. Here, the discharge port 132 is provided below the side surface 130 s of the discharge nozzle 130.

  In the substrate processing apparatus 100 of the present embodiment, a part of the discharge nozzle 130 and the supply unit 140 are integrally formed. Specifically, the supply unit 140 includes a connecting member 140c, a first connecting pipe 140d, and a second connecting pipe 140e. A connecting member 140c is connected to the discharge nozzle 130, and a first connecting pipe 140d and a second connecting pipe 140e are connected to the connecting member 140c. For example, the connecting member 140c is connected to the discharge nozzle 130 by welding. The first connecting pipe 140d and the second connecting pipe 140e are connected to the connecting member 140c by welding. The first connecting pipe 140d is positioned vertically above the second connecting pipe 140e.

  Specifically, the connecting member 140 c is connected to the upper part 130 a of the discharge nozzle 130. Here, the discharge nozzle 130, the connecting member 140c, the first connecting pipe 140d, and the second connecting pipe 140e are each formed of quartz.

  The connecting member 140c is provided with two through holes that penetrate the side wall. One through-hole of the two through-holes of the connecting member 140c is a flow path 141c for flowing the first component liquid L1, and the other through-hole is a flow path 142c for flowing the second component liquid L2.

  The outer peripheral surface of the first connecting pipe 140d extends in the longitudinal direction (Y direction). The through hole provided in the first connecting pipe 140d also extends in the longitudinal direction (Y direction). The through hole of the first connecting pipe 140d is a flow path 141d through which the first component liquid L1 flows.

  The outer peripheral surface of the second connecting pipe 140e extends in the longitudinal direction (Y direction). The through hole provided in the second connecting pipe 140e also extends in the longitudinal direction (Y direction). The through hole of the second connecting pipe 140e is a flow path 142e through which the second component liquid L2 flows.

  Here, the flow path 141d of the first connection pipe 140d and the flow path 141c of the connection member 140c form part of the first supply flow path 141. The flow path 142e of the second connection pipe 140e and the flow path 142c of the connection member 140c form part of the second supply flow path 142.

  The discharge nozzle 130 has a discharge port 132 and a discharge flow path 134. The discharge flow path 134 has a mixing chamber 134a and a communication part 134b. The connection part 134b has the linear part 134b1 and the bending part 134b2. The linear part 134b1 extends in one direction. Here, the linear portion 134b1 extends vertically downward (Z direction) from the mixing chamber 134a. The bent portion 134b2 extends from the front end of the linear portion 134b1 to the discharge port 132 by bending from the first direction to the second direction. Here, the bent part 134b2 extends in a direction that intersects the Z direction from the tip of the linear part 134b1 to the discharge port 132.

  The discharge nozzle 130 has a side surface 130s, an upper surface 130t, and a bottom surface 130u. Here, the discharge nozzle 130 has a shape in which a part of a cylindrical bottom surface is cut out. Each of the upper surface 130t and the bottom surface 130u communicates with the side surface 130s. A discharge port 132 is provided on the side surface 130s. The bottom surface 130 u of the discharge nozzle 130 is disposed obliquely with respect to the side surface 130 s provided with the discharge port 132. The end of the bottom surface 130u on the discharge port 132 side is positioned vertically below the end of the bottom surface 130u on the side opposite to the discharge port 132. The bottom surface 130u extends substantially parallel to the bent portion 134b2.

  Note that the diameter (length in the X direction) of the discharge port 132 is substantially equal to the diameter of the flow path (length in the Y direction) of the connecting portion 134b with respect to the processing liquid L. For example, the diameter of the discharge port 132 is 2 mm or more and 45 mm or less, and the channel diameter of the communication part 134b with respect to the processing liquid L is 2 mm or more and 45 mm or less. In one example, the diameter of the discharge port 132 is about 3 mm or more and 18 mm or less, and the flow path diameter of the communication part 134b with respect to the processing liquid L is about 3 mm or more and 18 mm or less.

  In the substrate processing apparatus 100 of the present embodiment, the bottom surface 130u of the discharge nozzle 130 is disposed obliquely with respect to the side surface 130s provided with the discharge port 132. For this reason, even if the wettability of the processing liquid L with respect to the discharge channel 134 is relatively high, the processing liquid L flows vertically downward from the discharge port 132 without going around the bottom surface 130 u of the discharge nozzle 130. Therefore, it is possible to suppress the occurrence of stagnation containing impurities due to the processing liquid that has entered the bottom surface of the discharge nozzle.

  Note that, as described above with reference to FIGS. 1, 5, 8 (a), and 9 (a), the discharge nozzle 130 is preferably supported by the nozzle support member 150.

  Here, the discharge nozzle 130 and the nozzle support member 150 will be described with reference to FIG. FIG. 10B is a schematic diagram showing the discharge nozzle 130 and the nozzle support member 150 in the substrate processing apparatus 100 of the present embodiment.

  As shown in FIG. 10B, the discharge nozzle 130 is supported by the nozzle support member 150. The nozzle support member 150 includes a placement part 152 and an arm member 154. The discharge nozzle 130 is placed on the placement unit 152. The mounting portion 152 is attached to the tip of the arm member 154.

  The mounting portion 152 is provided with a step. The placement unit 152 includes an upper surface 152a and an upper surface 152b having different heights in the vertical direction. The upper surface 152b is positioned vertically above the upper surface 152a.

  The mounting portion 152 is provided with a guide side surface corresponding to the outer diameter of the discharge nozzle 130. The guide side surface communicates with the upper surface 152a of the placement unit 152 and is orthogonal to the upper surface 152a of the placement unit 152. The discharge nozzle 130 is disposed along the guide side surface of the placement unit 152 and is placed on the placement unit 152. When the discharge nozzle 130 is placed on the placement portion 152, a part of the connection member 140c of the discharge nozzle 130 is disposed on the upper surface 152a, and the second connection pipe 140e of the discharge nozzle 130 is disposed on the upper surface 152b.

  In the above description with reference to FIGS. 5, 8, and 9, the hydrogen peroxide solution La and the sulfuric acid Lb, which cause an exothermic reaction during mixing, are used as the first component liquid L1 and the second component liquid L2. However, the present invention is not limited to this. The component liquid of the processing liquid L may include a liquid having a relatively high permeability. For example, any component liquid of the treatment liquid L may contain hydrochloric acid or sulfuric acid.

  In the description given above with reference to FIGS. 1 to 5, 8, and 9, the supply unit 140 has the first supply channel 141 and the second supply channel 142. It is not limited. The supply unit 140 may have three or more supply channels.

  Hereinafter, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. FIG. 11 is a schematic diagram showing the substrate processing apparatus 100 of the present embodiment. The substrate processing apparatus 100 shown in FIG. 11 is similar to FIG. 1 except that the supply unit 140 further includes a third supply channel 143 in addition to the first supply channel 141 and the second supply channel 142. The substrate processing apparatus 100 has the same configuration as described above. For this reason, redundant description is omitted for the purpose of avoiding redundancy.

  In the substrate processing apparatus 100 of this embodiment, the supply unit 140 further includes a third supply channel 143 in addition to the first supply channel 141 and the second supply channel 142. In the present embodiment, the processing liquid L is generated by mixing the first component liquid L1, the second component liquid L2, and the third component liquid L3.

  The first supply channel 141 allows the first component liquid L1 of the processing liquid L to flow through the discharge channel 134 of the discharge nozzle 130. The second supply flow path 142 flows the second component liquid L2 of the processing liquid L to the discharge flow path 134 of the discharge nozzle 130. The third supply flow path 143 flows the third component liquid L3 of the processing liquid L to the discharge flow path 134 of the discharge nozzle 130.

  The first supply channel 141 is disposed vertically above the second supply channel 142. Further, the second supply channel 142 is disposed vertically above the third supply channel 143.

  In this case, the first component liquid L1 flowing through the first supply flow path 141 has the substrate W and the third component liquid L3 flowing through the second supply flow path 142 and the third component liquid L3 flowing through the third supply flow path 143. It is preferable that the liquid is suitable for cleaning the discharge nozzle 130. In this case, the substrate W and / or the discharge nozzle 130 can be suitably cleaned with the first component liquid L1 by flowing the first component liquid L1 without flowing the second component liquid L2 and / or the third component liquid L3. For example, the first component liquid L1 is preferably a liquid having a lower permeability to the discharge nozzle 130 than the second component liquid L2 and / or the third component liquid L3.

  The first component liquid L1, the second component liquid L2, and the third component liquid L3 are mixed in the discharge flow path 134 of the discharge nozzle 130. In the substrate processing apparatus 100 of the present embodiment, a hydrochloric acid / hydrogen peroxide mixture (SC2) is preferably used as the processing liquid L. In this case, water or pure water is used as the first component liquid L1 that flows upward, hydrogen peroxide is used as the second component liquid L2 that flows upward, and hydrochloric acid is used as the third component liquid L3 that flows downward. It is preferable to use it.

  Next, the substrate processing apparatus 100 of this embodiment is demonstrated with reference to FIGS. The substrate processing apparatus 100 of this embodiment is provided with a plurality of chambers 110, and is different from the substrate processing apparatus 100 described above with reference to FIGS. 1, 5, 8A, 9A, and 11. Different. However, redundant description is omitted for the purpose of avoiding redundant explanation.

  First, the substrate processing apparatus 100 will be described with reference to FIG. FIG. 12 is a plan view showing the substrate processing apparatus 100. As shown in FIG. 12, the substrate processing apparatus 100 includes a component liquid cabinet 100A, a plurality of fluid boxes 100B, a plurality of processing units 100C, a plurality of load ports LP, an indexer robot IR, and a center robot CR. And a control device 170. The control device 170 controls the load port LP, the indexer robot IR, the center robot CR, and the processing unit 100C. Control device 170 includes a control unit 172 and a storage unit 174.

  Each of the load ports LP stores a plurality of substrates W stacked. The indexer robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transports the substrate W between the indexer robot IR and the processing unit 100C. Each of the processing units 100 </ b> C discharges the processing liquid L onto the substrate W to process the substrate W. Each of the fluid boxes 100B accommodates fluid equipment. The component liquid cabinet 100A accommodates the first component liquid L1 and the second component liquid L2.

  Specifically, the plurality of processing units 100C form a plurality of towers TW (four towers TW in FIG. 12) arranged so as to surround the center robot CR in plan view. Each tower TW includes a plurality of processing units 100C (three processing units 100C in FIG. 12) stacked one above the other. Each of the plurality of fluid boxes 100B corresponds to a plurality of towers TW. The component liquid in the component liquid cabinet 100A is supplied to all the processing units 100C included in the tower TW corresponding to the fluid box 100B via any fluid box 100B.

  Next, the supply of the processing liquid L to the processing unit 100C will be described with reference to FIG. FIG. 13 is a diagram illustrating piping of the substrate processing apparatus 100. As shown in FIG. 13, in the substrate processing apparatus 100, the component liquid cabinet 100A includes a first component liquid cabinet 100A1 and a second component liquid cabinet 100A2. In each tower TW of the substrate processing apparatus 100, each of the plurality of processing units 100C includes a chamber 110, a spin chuck 120, a discharge nozzle 130, and a supply unit 140. The spin chuck 120, the discharge nozzle 130, and the supply unit 140 are accommodated in the chamber 110.

  The first component liquid cabinet 100A1 supplies the first component liquid L1. The first component liquid cabinet 100A1 includes a component liquid reservoir 182, a filter 184, a pump 186, and a liquid circulation pipe 188. The component liquid storage unit 182, the filter 184, and the pump 186 are accommodated in the first component liquid cabinet 100A1. A part of the liquid circulation pipe 188 is accommodated in the first component liquid cabinet 100A1, and the other part of the liquid circulation pipe 188 is accommodated in the fluid box 100B.

  The liquid circulation pipe 188 includes an upstream pipe 188a extending downstream from the component liquid reservoir 182; a plurality of individual pipes 188b branched from the upstream pipe 188a; and a downstream pipe 188c extending downstream from each individual pipe 188b to the component liquid reservoir 182. Including.

  The upstream end of the upstream pipe 188 a is connected to the component liquid storage unit 182. The downstream end of the downstream pipe 188 c is connected to the component liquid storage unit 182. The upstream end of the upstream pipe 188 a corresponds to the upstream end of the liquid circulation pipe 188, and the downstream end of the downstream pipe 188 c corresponds to the downstream end of the liquid circulation pipe 188. Each individual pipe 188b extends from the downstream end of the upstream pipe 188a to the upstream end of the downstream pipe 188c.

  The plurality of individual pipes 188b correspond to the plurality of towers TW, respectively. Three supply sections 140 corresponding to the three processing units 100C included in one tower TW are connected to one individual pipe 188b.

  The pump 186 sends the first component liquid L1 in the component liquid reservoir 182 to the liquid circulation pipe 188. The filter 184 removes foreign substances from the first component liquid L1 flowing through the liquid circulation pipe 188.

  The filter 184 and the pump 186 are disposed in the upstream pipe 188a. The first component liquid L1 in the component liquid reservoir 182 is sent to the upstream pipe 188a by the pump 186, and flows from the upstream pipe 188a to the plurality of individual pipes 188b. The first component liquid L1 in the individual pipe 188b flows to the downstream pipe 188c and returns to the component liquid storage unit 182 from the downstream pipe 188c.

  The second component liquid cabinet 100A2 supplies the second component liquid L2. The second component liquid cabinet 100A2 includes a temperature controller 146, a component liquid storage unit 182, a filter 184, a pump 186, and a liquid circulation pipe 188. The temperature controller 146, the component liquid storage unit 182, the filter 184, and the pump 186 are accommodated in the component liquid cabinet 100A. A part of the liquid circulation pipe 188 is accommodated in the component liquid cabinet 100A, and the other part of the liquid circulation pipe 188 is accommodated in the fluid box 100B.

  The liquid circulation pipe 188 includes an upstream pipe 188a extending downstream from the component liquid reservoir 182; a plurality of individual pipes 188b branched from the upstream pipe 188a; and a downstream pipe 188c extending downstream from each individual pipe 188b to the component liquid reservoir 182. Including.

  The upstream end of the upstream pipe 188 a is connected to the component liquid storage unit 182. The downstream end of the downstream pipe 188 c is connected to the component liquid storage unit 182. The upstream end of the upstream pipe 188 a corresponds to the upstream end of the liquid circulation pipe 188, and the downstream end of the downstream pipe 188 c corresponds to the downstream end of the liquid circulation pipe 188. Each individual pipe 188b extends from the downstream end of the upstream pipe 188a to the upstream end of the downstream pipe 188c.

  The plurality of individual pipes 188b correspond to the plurality of towers TW, respectively. Three supply sections 140 corresponding to the three processing units 100C included in one tower TW are connected to one individual pipe 188b.

  The pump 186 sends the second component liquid L2 in the component liquid reservoir 182 to the liquid circulation pipe 188. The filter 184 removes foreign substances from the second component liquid L2 flowing through the liquid circulation pipe 188. The temperature controller 146 adjusts the temperature of the component liquid in the component liquid storage unit 182. The temperature controller 146 is, for example, a heater that heats the second component liquid L2.

  The temperature controller 146, the filter 184, and the pump 186 are disposed in the upstream pipe 188a. The second component liquid L2 in the component liquid reservoir 182 is sent to the upstream pipe 188a by the pump 186, and flows from the upstream pipe 188a to the plurality of individual pipes 188b. The second component liquid L2 in the individual pipe 188b flows to the downstream pipe 188c and returns to the component liquid storage unit 182 from the downstream pipe 188c. The 2nd component liquid L2 in the component liquid storage part 182 is heated by the temperature regulator 146 so that it may become specific temperature more than the regulation temperature TM. Therefore, the temperature of the second component liquid L2 circulating through the liquid circulation pipe 188 is maintained at a specific temperature equal to or higher than the specified temperature TM. When the second component liquid L2 is maintained at a specific temperature in the liquid circulation pipe 188, the second component liquid L2 is supplied to the supply unit 140.

  The fluid box 100 </ b> B includes a valve 192, a flow meter 194, and a flow rate adjustment valve 196. The supply start and supply stop of the first component liquid L1 and the second component liquid L2 to the discharge nozzle 130 are switched by a valve 192. The flow rates of the first component liquid L1 and the second component liquid L2 supplied to the discharge nozzle 130 are detected by a flow meter 194. The flow rate can be changed by the flow rate adjusting valve 196. When the valve 192 is opened, the first component liquid L1 and the second component liquid L2 are supplied from the supply unit 140 to the discharge nozzle 130 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 196. As a result, the processing liquid L is discharged from the discharge nozzle 130. The opening degree indicates the degree to which the flow rate adjustment valve 196 is open.

  Although the substrate processing apparatus 100 shown in FIGS. 1 to 13 is a single wafer type that processes the substrates W one by one, the present embodiment is not limited to this. The substrate processing apparatus 100 may be a batch type that processes a plurality of substrates W simultaneously.

  The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiment, and can be implemented in various modes without departing from the gist thereof. In addition, various inventions can be formed by appropriately combining a plurality of components disclosed in the above embodiments. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined. In order to facilitate understanding, the drawings schematically show each component as a main component, and the thickness, length, number, interval, etc. of each component shown in the drawings are actual for convenience of drawing. May be different. In addition, the material, shape, dimensions, and the like of each component shown in the above embodiment are merely examples, and are not particularly limited, and various changes can be made without departing from the effects of the present invention. is there.

  The present invention is suitably used for a substrate processing apparatus and a substrate processing method for processing a substrate.

DESCRIPTION OF SYMBOLS 100 Substrate processing apparatus 130 Discharge nozzle 132 Discharge port 134 Discharge flow path 140 Supply part 141 1st supply flow path 142 2nd supply flow path W Substrate L Processing liquid

Claims (12)

A substrate processing apparatus for processing a substrate with a processing liquid,
A discharge nozzle having a discharge port for discharging the processing liquid onto the substrate, and a discharge channel communicating with the discharge port;
A supply unit communicating with the discharge flow path of the discharge nozzle,
At least a portion of the discharge channel is formed of quartz;
The supply unit
A first supply flow path for flowing the first component liquid of the treatment liquid to the discharge flow path of the discharge nozzle;
A substrate processing apparatus, comprising: a second supply channel that causes the second component liquid of the processing solution to flow into the discharge channel of the discharge nozzle.   The substrate processing apparatus according to claim 1, wherein at least a part of the first supply channel and the second supply channel is formed of quartz. The first supply channel is
A first pipe;
A first connecting portion that connects the first pipe and the discharge nozzle;
The second supply channel is
A second pipe;
A second connecting part that connects the second pipe and the discharge nozzle;
The substrate processing apparatus according to claim 1, wherein each of the first connecting part and the second connecting part is made of quartz.   The substrate processing apparatus according to claim 3, wherein the first connection part, the second connection part, and the discharge nozzle are welded.   The substrate processing apparatus according to claim 3, wherein the first pipe and the second pipe are formed of a conductive tube.   The substrate processing apparatus according to claim 1, wherein the discharge flow path includes a mixing chamber communicating with the first supply flow path and the second supply flow path. The discharge flow path further includes a communication portion that connects the mixing chamber and the discharge port,
The substrate processing apparatus according to claim 6, wherein a flow path diameter for the processing liquid in the mixing chamber is larger than a flow path diameter for the processing liquid in the communication unit. The discharge nozzle is
An upper portion defining the mixing chamber;
A lower part defining the communication part,
The substrate processing apparatus according to claim 7, wherein the upper part and the lower part are welded. The first component liquid includes hydrogen peroxide water,
The second component liquid contains sulfuric acid,
9. The substrate processing apparatus according to claim 1, wherein the first supply channel is positioned above the second supply channel in a vertical direction.   The substrate processing apparatus according to claim 1, further comprising a nozzle support member that supports the discharge nozzle. The discharge nozzle has a side surface provided with the discharge port, and a bottom surface communicating with the side surface,
The substrate processing apparatus according to claim 1, wherein the bottom surface of the discharge nozzle is disposed obliquely with respect to the side surface on which the discharge port is provided. A substrate processing method for processing a substrate with a processing liquid,
Supplying the first component liquid of the processing liquid to the discharge flow path of the discharge nozzle via the first supply flow path;
Supplying a second component liquid of the treatment liquid to the discharge flow path of the discharge nozzle via a second supply flow path;
Mixing the first component liquid and the second component liquid in the discharge flow path of the discharge nozzle to generate the treatment liquid;
A step of discharging the treatment liquid from the discharge port of the discharge nozzle onto the substrate,
A substrate processing method, wherein at least a part of the discharge channel is formed of quartz.

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