JP2019125700A - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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JP2019125700A
JP2019125700A JP2018005308A JP2018005308A JP2019125700A JP 2019125700 A JP2019125700 A JP 2019125700A JP 2018005308 A JP2018005308 A JP 2018005308A JP 2018005308 A JP2018005308 A JP 2018005308A JP 2019125700 A JP2019125700 A JP 2019125700A
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conductor
power semiconductor
semiconductor element
semiconductor device
power
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JP7030535B2 (en
JP2019125700A5 (en
Inventor
ひろみ 島津
Hiromi Shimazu
ひろみ 島津
谷江　尚史
Hisafumi Tanie
尚史 谷江
晃 松下
Akira Matsushita
晃 松下
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Hitachi Astemo Ltd
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Hitachi Automotive Systems Ltd
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Priority to JP2018005308A priority Critical patent/JP7030535B2/en
Priority to PCT/JP2018/045404 priority patent/WO2019142543A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body

Abstract

To provide a highly-reliable power module.SOLUTION: A power semiconductor device comprises: a semiconductor element 31; and a first conductor 33 and a second conductor 34 that sandwich the semiconductor element therebetween and that are individually connected with the semiconductor element via a solder material 32. The semiconductor element has a first electrode on one surface, a second electrode on the other surface, wiring 45 on the one surface, and a protection film 46 that covers the wiring. The first conductor is arranged at the one surface side of the semiconductor element. Further, the first conductor has a projection 33p protruded further than the other parts, at a part opposed to the protection film.SELECTED DRAWING: Figure 7

Description

本発明は、パワー半導体装置に関し、特に車両駆動用のモータを制御する電力変換装置に用いられるパワー半導体装置に関する。   The present invention relates to a power semiconductor device, and more particularly to a power semiconductor device used for a power conversion device that controls a motor for driving a vehicle.

近年、環境への負荷低減のため、ハイブリッド自動車や電気自動車の普及が急務である。ハイブリッド自動車や電気自動車においては搭載される部品の小型化が重要視され、電力変換装置も例外ではなく小型化が求められている。   In recent years, the spread of hybrid cars and electric cars is urgently needed to reduce the load on the environment. In hybrid vehicles and electric vehicles, it is important to miniaturize the mounted components, and power conversion devices are no exception and are required to be compact.

電力変換装置の小型化に伴い発熱密度が高くなるため、電力変換装置を構成する電子部品の中で発熱量が大きいパワー半導体装置においては、冷却性能を向上させる必要があり、例えば特許文献１に示すように、両面直接冷却方式のパワー半導体装置が開示されている。   Since the heat generation density increases with the miniaturization of the power conversion device, it is necessary to improve the cooling performance in the power semiconductor device having a large amount of heat generation among the electronic components constituting the power conversion device. As shown, a double-sided direct cooling power semiconductor device is disclosed.

特許文献１に記載のパワー半導体装置においては、パワー半導体チップの表裏両面を導電板に半田付けし、導体板を露出した状態で樹脂により封止した封止体を、両面に放熱部材を有する筒型の金属ケース内に、収納された構造となっている。   In the power semiconductor device described in Patent Document 1, both the front and back surfaces of the power semiconductor chip are soldered to a conductive plate, and a sealing body sealed with resin in a state where the conductive plate is exposed is a cylinder having a heat dissipation member on both sides. It is housed in a metal case of a mold.

金属ケースの内側（放熱部材）と導体板との間は熱伝導性の絶縁接着剤（絶縁部材）により接着されており、パワー半導体チップの発熱を、両面の導体板、熱伝導性の絶縁接着剤（絶縁部材）、放熱部材を介して、外部に放熱している。   The inside of the metal case (heat dissipation member) and the conductor plate are adhered by a heat conductive insulating adhesive (insulation member), and the heat generation of the power semiconductor chip is achieved by the conductor plate on both sides, the heat conductive insulation bond. The heat is dissipated to the outside through the agent (insulation member) and the heat dissipation member.

しかしパワー半導体装置においては、さらなるパワー密度の向上のためパワー半導体チップの使用温度範囲の高温化や、パワーサイクル寿命の長寿命化が望まれている。   However, in the power semiconductor device, in order to further improve the power density, it is desired to raise the operating temperature range of the power semiconductor chip and prolong the power cycle life.

これにより、パワー半導体素子と導体板との接続部における長期信頼性の低下が懸念される。特にパワー半導体素子のチップ表面電極側（エミッタ側）には、ゲートフィンガーと呼ばれる配線やそれを保護する配線保護膜のパターンが形成されている。   As a result, there is a concern that the long-term reliability of the connection portion between the power semiconductor element and the conductor plate may be reduced. In particular, on the chip surface electrode side (emitter side) of the power semiconductor element, a wiring called a gate finger and a pattern of a wiring protective film for protecting it are formed.

両面冷却型のパワー半導体装置では、これらの保護膜パターンを含めた表面電極が導体とはんだ接続されている。このため、パワー半導体チップの発熱時には、表面電極、導体や保護膜の線膨脹係数差により配線保護膜パターン端部は応力集中場となり、配線保護膜パターン端部付近の表面電極膜やはんだには繰り返し高い応力が負荷されることになり疲労破壊が懸念される。   In a double-sided cooling type power semiconductor device, surface electrodes including these protective film patterns are soldered to a conductor. For this reason, at the time of heat generation of the power semiconductor chip, a stress concentration field is formed at the end of the wiring protective film pattern due to the difference in linear expansion coefficient of the surface electrode, the conductor and the protective film. Repeatedly high stress will be applied, which may cause fatigue failure.

特開２０１２−２５７３６９号公報JP 2012-257369 A

そこで本発明の課題は、パワー半導体チップの繰り返し発熱（パワーサイクル時）のチップ表面電極と導体接続部に対する信頼性を向上させることである。   Therefore, an object of the present invention is to improve the reliability of the chip surface electrode and the conductor connection portion of repeated heat generation (during a power cycle) of the power semiconductor chip.

上記課題を解決するために、本発明に係るパワー半導体装置は、半導体素子と、前記半導体素子を挟みかつ当該半導体素子と半田材を介して、それぞれ接続される第１導体及び第２導体と、を備え、前記半導体素子は、一方の面に第１電極と、他方の面に第２電極と、当該一方の面に配線と、当該配線を覆う保護摸とを有し、前記第１導体は、前記半導体素子の前記一方の面側に配置され、さらに前記第１導体は、前記保護摸と対向する部分に他の部分より突出する突出部を有する。   In order to solve the above problems, a power semiconductor device according to the present invention comprises: a semiconductor element; and a first conductor and a second conductor respectively connected to the semiconductor element with the semiconductor element interposed therebetween via a solder material. The semiconductor element has a first electrode on one side, a second electrode on the other side, a wire on the one side, and a protective cover covering the wire, and the first conductor is The first conductor is disposed on the one surface side of the semiconductor element, and the first conductor has a protrusion which protrudes from the other portion in a portion facing the protective wedge.

本発明によれば、パワー半導体装置の信頼性を向上させることができる。   According to the present invention, the reliability of the power semiconductor device can be improved.

本実施形態に係る電力変換装置２００の外観斜視図である。It is an appearance perspective view of power converter 200 concerning this embodiment. 本実施形態に係る電力変換装置２００の分解斜視図である。It is an exploded perspective view of power converter 200 concerning this embodiment. 本実施形態に係るパワーモジュール１００の外観正面図である。It is an external appearance front view of power module 100 concerning this embodiment. 図３に図示されたパワーモジュール１００のＡ−Ａ´線縦断面図である。FIG. 4 is a vertical cross-sectional view of the power module 100 shown in FIG. 本実施形態に係るパワーモジュール１００のパワー半導体素子３１の平面図である。It is a top view of the power semiconductor element 31 of the power module 100 which concerns on this embodiment. パワー半導体素子３１と第１導体３３との接続部のみを示した平面図と側面図である。It is the top view and side view which showed only the connection part of the power semiconductor element 31 and the 1st conductor 33. FIG. パワー半導体素子３１と第１導体３３との接続部のみを示した平面図と側面図である。It is the top view and side view which showed only the connection part of the power semiconductor element 31 and the 1st conductor 33. FIG. 有限要素法解析により、突出部３３ｐがある場合とない場合の電極膜４４の応力を評価した結果を示すグラフである。It is a graph which shows the result of having evaluated the stress of the electrode film 44 with the case where there is a projection part 33p, and the case where there is no projection part 33p by finite element analysis. 第３実施形態に係るパワー半導体素子３１と第１導体３３との接続部のみを示した平面図と側面図である。It is the top view and side view which showed only the connection part of the power semiconductor element 31 which concerns on 3rd Embodiment, and the 1st conductor 33. FIG. 他の実施形態に係るパワー半導体素子３１と第１導体３３との接続部のみを示した平面図と側面図である。It is the top view and side view which showed only the connection part of the power semiconductor element 31 which concerns on other embodiment, and the 1st conductor 33. FIG.

（実施例１）
以下、図を参照して、本発明に係る電力変換装置の一実施の形態を説明する。 Example 1
Hereinafter, an embodiment of a power conversion device according to the present invention will be described with reference to the drawings.

図１は、本実施形態に係る電力変換装置２００の外観斜視図である。図２は、本実施形態に係る電力変換装置２００の分解斜視図である。   FIG. 1 is an external perspective view of a power conversion device 200 according to the present embodiment. FIG. 2 is an exploded perspective view of the power conversion device 200 according to the present embodiment.

電力変換装置２００は、電気自動車やハイブリッド自動車の電源装置として用いられる。電力変換装置２００は、モータジェネレータに接続されたインバータ回路を内蔵し、また外部のバッテリに接続された昇圧回路および全体を制御する制御回路を備えている。   The power conversion device 200 is used as a power supply device of an electric car or a hybrid car. Power conversion device 200 incorporates an inverter circuit connected to a motor generator, and further includes a booster circuit connected to an external battery and a control circuit for controlling the entire battery.

電力変換装置２００は、アルミニウムやアルミニウム合金等のアルミニウム系金属により形成された筐体２０１と、筐体２０１に締結部材（不図示）により締結される底蓋２０２と、を有する。筐体２０１と底蓋２０２とは、一体成型により形成することもできる。   Power converter 200 has a case 201 formed of an aluminum-based metal such as aluminum or an aluminum alloy, and a bottom cover 202 fastened to case 201 by a fastening member (not shown). The housing 201 and the bottom cover 202 can also be formed by integral molding.

筐体２０１の上部には、不図示の上蓋が締結部材により締結され、密閉状の容器が形成される。筐体２０１の内部には、冷却流路を形成するための周壁２１１が形成され、周壁２１１と底蓋２０２とにより冷却用空間２１０が形成されている。   An upper lid (not shown) is fastened to the upper portion of the housing 201 by a fastening member to form a sealed container. Inside the housing 201, a peripheral wall 211 for forming a cooling flow path is formed, and a cooling space 210 is formed by the peripheral wall 211 and the bottom cover 202.

冷却用空間２１０内には、複数（図２では４つ）の側壁２２１を有する支持部材２２０と各側壁２２１間に配置される複数（図２では３つ）のパワーモジュール１００が収納される。パワーモジュール１００の詳細は後述する。   In the cooling space 210, a plurality of (four in FIG. 2) support members 220 having side walls 221 and a plurality of (three in FIG. 2) power modules 100 disposed between the side walls 221 are accommodated. Details of the power module 100 will be described later.

筐体２０１の一側部には、一対の貫通孔が設けられ、貫通孔の一方には、入口用配管２０３ａが設けられ、貫通孔の他方には、出口用配管２０３ｂが設けられている。   A pair of through holes are provided in one side portion of the housing 201, an inlet pipe 203a is provided in one of the through holes, and an outlet pipe 203b is provided in the other of the through holes.

冷却水などの冷却媒体は、入口用配管２０３ａから冷却用空間２１０内に流入し、支持部材２２０の側壁２２１と各パワーモジュール１００との間の冷却路を流通して出口用配管２０３ｂから流出する。   A cooling medium such as cooling water flows into the cooling space 210 from the inlet pipe 203a, flows through the cooling path between the side wall 221 of the support member 220 and each power module 100, and flows out from the outlet pipe 203b. .

出口用配管２０３ｂから流出した冷却媒体は、不図示のラジエータ等の冷却装置によって冷却されて、再び、入口用配管２０３ａから冷却用空間２１０内に流入するように循環する。   The cooling medium having flowed out of the outlet pipe 203b is cooled by a cooling device such as a radiator (not shown) and circulated again so as to flow into the cooling space 210 from the inlet pipe 203a.

冷却用空間２１０は、シール部材２３１を介在して、カバー部材２４０により密封される。カバー部材２４０は、パワーモジュール１００の端子が挿通される開口部２４１を形成する。カバー部材２４０の周縁部は、冷却用空間２１０を形成する周壁２１１の上部に、不図示の締結部材により固定される。   The cooling space 210 is sealed by the cover member 240 with the seal member 231 interposed therebetween. The cover member 240 forms an opening 241 through which the terminal of the power module 100 is inserted. The peripheral portion of the cover member 240 is fixed to an upper portion of the peripheral wall 211 forming the cooling space 210 by a fastening member (not shown).

筐体２０１の冷却用空間２１０の外側領域には、インバータ回路に供給される直流電力を平滑化するための複数のコンデンサ素子２５１を備えるコンデンサモジュール２５０が収納される。   In an outer region of the cooling space 210 of the housing 201, a capacitor module 250 including a plurality of capacitor elements 251 for smoothing DC power supplied to the inverter circuit is housed.

コンデンサモジュール２５０とパワーモジュール１００の上部に、直流側バスバーアセンブリ２６１が配置される。直流側バスバーアセンブリ２６１は、コンデンサモジュール２５０とパワーモジュール１００の間に直流電力を伝達する。   The DC side bus bar assembly 261 is disposed on the top of the capacitor module 250 and the power module 100. The DC side bus bar assembly 261 transfers DC power between the capacitor module 250 and the power module 100.

直流側バスバーアセンブリ２６１の上方には、インバータ回路を制御するドライバ回路部を含んだ制御回路基板アセンブリ２６２が配置されている。   A control circuit board assembly 262 including a driver circuit unit that controls the inverter circuit is disposed above the DC side bus bar assembly 261.

交流側バスバーアセンブリ２６３は、パワーモジュール１００と接続され、交流電力を伝達する。また、交流側バスバーアセンブリ２６３は、電流センサを有する。   The AC side bus bar assembly 263 is connected to the power module 100 to transmit AC power. Also, the AC side bus bar assembly 263 has a current sensor.

図３ないし図６に基づき、本実施形態に係るパワーモジュール１００について説明する。   The power module 100 according to the present embodiment will be described based on FIGS. 3 to 6.

図３は、本実施形態に係るパワーモジュール１００の外観正面図である。図４は、図３に図示されたパワーモジュール１００のＡ−Ａ´線縦断面図である。図５は、本実施形態に係るパワーモジュール１００の金属ケースの断面図である。図６は、本発明のパワーモジュール１００のパワー半導体モジュールの断面図である。   FIG. 3 is an external front view of the power module 100 according to the present embodiment. FIG. 4 is a longitudinal sectional view of the power module 100 shown in FIG. FIG. 5 is a cross-sectional view of the metal case of the power module 100 according to the present embodiment. FIG. 6 is a cross-sectional view of a power semiconductor module of the power module 100 of the present invention.

図３及び図４に示されるように、パワーモジュール１００は、放熱フィン４２を有する一対の放熱部材４１及び枠体４３から構成されている金属製ケース４０を有する。   As shown in FIGS. 3 and 4, the power module 100 has a metal case 40 configured of a pair of heat dissipating members 41 having heat dissipating fins 42 and a frame 43.

金属製ケース４０内に、パワー半導体素子３１等を内蔵する回路体が収納されている。   In the metal case 40, a circuit body containing the power semiconductor element 31 and the like is accommodated.

金属製ケース４０は、例えば一面に挿入口を、他面に底部を有する扁平状の筒型形状をした冷却器である。金属製ケース４０は、電気伝導性を有する部材、例えばＣｕ、Ｃｕ合金、Ｃｕ−Ｃ、Ｃｕ−ＣｕＯなどの複合材、あるいはＡｌ、Ａｌ合金、ＡｌＳｉＣ、Ａｌ−Ｃなどの複合材などから形成されている。   The metal case 40 is, for example, a flat-cylindrical cooler having an insertion port on one side and a bottom on the other side. The metal case 40 is formed of a member having electrical conductivity, for example, a composite material such as Cu, Cu alloy, Cu-C, Cu-CuO, or a composite material such as Al, Al alloy, AlSiC, Al-C, etc. ing.

一対の放熱部材４１は、枠体４３と接合されている。接合としては、例えば、ＦＳＷ（摩擦攪拌接合）、レーザ溶接、ろう付等を適用することができる。このような形状の金属製のケースを用いることで、パワーモジュール１００を水や油、有機物などの冷媒が流れる流路内に挿入しても、冷却媒体がパワーモジュール１００の内部に侵入するのを簡易な構成で防ぐことができる。本実施形態においては、放熱部材４１と枠体４３が別部材の場合について示したが、放熱部材４１と枠体４３は同一部材であってもよく一体化されていてもよい。   The pair of heat dissipation members 41 is joined to the frame 43. As the bonding, for example, FSW (friction stir welding), laser welding, brazing or the like can be applied. By using a metal case of such a shape, even if the power module 100 is inserted into a flow path through which a refrigerant such as water, oil, or an organic material flows, the cooling medium may enter into the power module 100. It can be prevented by a simple configuration. In this embodiment, although the case where the heat radiating member 41 and the frame 43 are separate members is shown, the heat radiating member 41 and the frame 43 may be the same member or may be integrated.

上述した実施の形態では、開口部が１方向のみのパワーモジュールの例を示したが、開口部が対向する２方向のパワーモジュールにも適用することが可能である。   In the embodiment described above, the example of the power module in which the opening is in only one direction is shown, but it is also possible to apply to a power module in two directions in which the openings face each other.

図４に示されるように、第１導体３３と第２導体３４のそれぞれは、パワー半導体素子３１の各電極面に対向して配置され、接合材３２を介して接合される。第１導体３３はパワー半導体素子３１の表面電極に接続され、第２導体３４が裏面電極に接続されている。   As shown in FIG. 4, each of the first conductor 33 and the second conductor 34 is disposed to be opposed to each electrode surface of the power semiconductor element 31, and is joined via the joining material 32. The first conductor 33 is connected to the front surface electrode of the power semiconductor element 31, and the second conductor 34 is connected to the back surface electrode.

第１導体３３及び第２導体３４は、例えば、銅、銅合金、あるいはアルミニウム、アルミニウム合金などにより形成されている。接合材３２ははんだ材などにより形成されている。   The first conductor 33 and the second conductor 34 are made of, for example, copper, a copper alloy, aluminum, an aluminum alloy or the like. The bonding material 32 is formed of a solder material or the like.

なお図４では第１導体３３が同一部材で形成されている場合を示したが、複数の部材を接合して形成されていても構わない。   In addition, although the case where the 1st conductor 33 was formed with the same member was shown in FIG. 4, you may join and form several members.

パワー半導体素子３１と第１導体３３と第２導体３４とに構成される構造体は、第１封止樹脂６で封止されている。   A structure configured of the power semiconductor element 31, the first conductor 33 and the second conductor 34 is sealed by a first sealing resin 6.

第１導体３３の上面３３ａ及び第２導体３４の上面３４ａは、第１封止樹脂６から露出しており、熱伝導性の絶縁層５１を介して放熱部材４１と接続されている。   The upper surface 33 a of the first conductor 33 and the upper surface 34 a of the second conductor 34 are exposed from the first sealing resin 6, and are connected to the heat dissipation member 41 through the thermally conductive insulating layer 51.

絶縁層５１は、パワー半導体素子３１から発生する熱を放熱部材４１に熱伝導するものであり、熱伝導率が高く、かつ、絶縁耐圧が大きい材料で形成されている。例えば、酸化アルミニウム（アルミナ）、窒化アルミニウム、窒化ケイ素等のセラミックス、あるいは、これらの微粉末を含有する絶縁シートまたは接着剤を用いることができる。   The insulating layer 51 thermally conducts the heat generated from the power semiconductor element 31 to the heat dissipation member 41, and is formed of a material having a high thermal conductivity and a large withstand voltage. For example, a ceramic such as aluminum oxide (alumina), aluminum nitride, silicon nitride, or an insulating sheet or adhesive containing these fine powders can be used.

金属製ケース４０と絶縁層５１およびモールド樹脂６との隙間は第２封止樹脂７により、埋められている。   The gap between the metal case 40 and the insulating layer 51 and the mold resin 6 is filled with the second sealing resin 7.

図５は、本実施形態に係るパワーモジュール１００のパワー半導体素子３１の平面図である。図６は、パワー半導体素子３１と第１導体３３との接続部のみを示した平面図と側面図である。図７は、パワー半導体素子３１と第１導体３３との接続部のみを示した平面図と側面図である。   FIG. 5 is a plan view of the power semiconductor element 31 of the power module 100 according to the present embodiment. FIG. 6 is a plan view and a side view showing only the connection portion between the power semiconductor element 31 and the first conductor 33. As shown in FIG. FIG. 7 is a plan view and a side view showing only the connection portion between the power semiconductor element 31 and the first conductor 33.

図５に示されるように、パワー半導体素子３１の表面には、電極膜４４と電極パッド４７が形成されている。図７に示されるように、パワー半導体素子３１の表面には、さらに、配線４５と、配線４５を保護するための保護膜４６とが形成される。   As shown in FIG. 5, an electrode film 44 and an electrode pad 47 are formed on the surface of the power semiconductor element 31. As shown in FIG. 7, a wire 45 and a protective film 46 for protecting the wire 45 are further formed on the surface of the power semiconductor element 31.

電極膜４４や配線４５は例えば、アルミニウム、アルミニウム合金、あるいは銅、銅合金などにより形成されている。電極膜４４の表面にはニッケルなどの金属膜が形成されていてもよい。また、保護膜４６は例えば、ポリイミド膜などにより形成されている。   The electrode film 44 and the wiring 45 are formed of, for example, aluminum, an aluminum alloy, copper, a copper alloy, or the like. A metal film such as nickel may be formed on the surface of the electrode film 44. The protective film 46 is formed of, for example, a polyimide film.

パワー半導体素子３１と接続する第１導体３３の面には、保護膜４６に対向する位置に突出部３３ｐが設けられている。突出部３３ｐは、少なくとも保護膜４６の幅と同じかそれよりも大きい幅で形成されている。   A protrusion 33 p is provided on the surface of the first conductor 33 connected to the power semiconductor element 31 at a position facing the protective film 46. The protrusion 33 p is formed to have a width at least equal to or larger than the width of the protective film 46.

突出部３３ｐの側壁３３ｂは、投影面（電極膜４４と平行な面）上で保護膜４６の側壁４６ａと同じかそれより外側になるように設けられている。   The side wall 33 b of the protrusion 33 p is provided on the projection plane (the plane parallel to the electrode film 44) to be the same as or outside the side wall 46 a of the protective film 46.

また、突出部３３ｐの平面パターンは、配線４５の上面を覆うように設けられた保護膜４６のパターンに沿って設けられている。   The planar pattern of the projecting portion 33 p is provided along the pattern of the protective film 46 provided to cover the upper surface of the wiring 45.

本実施形態に係る第１導体３３により作用と効果を説明する。   An operation and an effect will be described by the first conductor 33 according to the present embodiment.

両面冷却パワー半導体装置では、パワー半導体素子３１の両面を導体に接合材により接続されている。パワー半導体素子３１の発熱時には、パワー半導体素子３１、はんだなどの接合材３２、第１導体３３および第２導体３４など、パワー半導体素子３１周辺部材の温度は上昇する。   In the double-sided cooling power semiconductor device, both surfaces of the power semiconductor element 31 are connected to a conductor by a bonding material. When the power semiconductor element 31 generates heat, the temperature of peripheral members of the power semiconductor element 31 such as the power semiconductor element 31, the bonding material 32 such as solder, the first conductor 33 and the second conductor 34 rises.

特にはんだなどの接合材３２の線膨脹係数は、パワー半導体素子３１や第１導体３３および第２導体３４に比べて大きいため、他の部材に比べて膨脹量が大きい。接合材３２の膨脹により、保護膜４６は力を受け、保護膜４６端部には応力が発生する。   In particular, since the linear expansion coefficient of the bonding material 32 such as solder is larger than that of the power semiconductor element 31, the first conductor 33 and the second conductor 34, the amount of expansion is larger than that of other members. Due to the expansion of the bonding material 32, the protective film 46 receives a force, and a stress is generated at the end of the protective film 46.

本実施形態におけるパワーモジュール１００においては、第１導体３３のパワー半導体素子３１を接続する面には、保護膜４６に対向する位置に突出部３３ｐが設けられている。これにより保護膜４６上のはんだ厚３２ｂを、他の部分のはんだ厚３２ａよりも薄くすることができる。   In the power module 100 according to the present embodiment, on the surface of the first conductor 33 to which the power semiconductor element 31 is connected, a protrusion 33 p is provided at a position facing the protective film 46. Thereby, the solder thickness 32b on the protective film 46 can be made thinner than the solder thickness 32a of other parts.

これにより、突出部３３ｐ以外のはんだの膨脹量が、突出部３３ｐ付近のはんだの膨脹量よりも大きくなり、突出部付近の保護膜４６に負荷される力を減少することができる。   As a result, the amount of expansion of the solder other than the protruding portion 33p becomes larger than the amount of expansion of the solder near the protruding portion 33p, and the force applied to the protective film 46 near the protruding portion can be reduced.

図８は、有限要素法解析により、突出部３３ｐがある場合とない場合の電極膜４４の応力を評価した結果を示すグラフである。   FIG. 8 is a graph showing the result of evaluation of stress of the electrode film 44 with and without the protrusion 33 p by finite element analysis.

従来のように突出部が無い場合に比べて、突出部を設けた場合、応力は約４０％低減出来ることを確認した。このように応力が低減されることにより、保護膜端部での電極膜の疲労破壊を防止することが可能となる。   It was confirmed that the stress can be reduced by about 40% when the protrusion is provided as compared with the case where the protrusion is not provided as in the prior art. By thus reducing the stress, it is possible to prevent the fatigue failure of the electrode film at the end of the protective film.

これにより、保護膜４６端部に発生する応力を低減することができ、電極４４や接合材３２の疲労破壊を防止でき、信頼性の高いパワー半導体装置が実現できる。   As a result, the stress generated at the end of the protective film 46 can be reduced, the fatigue failure of the electrode 44 and the bonding material 32 can be prevented, and a highly reliable power semiconductor device can be realized.

（実施例２）
第１の実施例では、第２導体３３がパワー半導体素子３１と絶縁層５１に接続部３２を介して接続されているパワーモジュールの例を示した。図９は、第２実施形態に係るパワーモジュール１００の断面図である。 (Example 2)
In the first embodiment, an example of the power module in which the second conductor 33 is connected to the power semiconductor element 31 and the insulating layer 51 via the connection portion 32 is shown. FIG. 9 is a cross-sectional view of a power module 100 according to the second embodiment.

図９に示されるように、パワー半導体素子３１の表面電極側に接合材３２を介して第２導体３３を接続し、さらに接合材３８を介して第３導体３５に接続され、第３導体３５が絶縁層５１に接続されていてもよい。   As shown in FIG. 9, the second conductor 33 is connected to the surface electrode side of the power semiconductor element 31 via the bonding material 32, and is further connected to the third conductor 35 via the bonding material 38, and the third conductor 35 May be connected to the insulating layer 51.

また、第１の実施形態では、パワーモジュール１００は、放熱フィン４２を有する一対の放熱部材４１と枠体４３から構成されている金属製ケース４０を有し、金属製ケース４０内に、パワー半導体モジュールが収納されている場合について示した。   Further, in the first embodiment, the power module 100 has a metal case 40 composed of a pair of heat dissipating members 41 having heat dissipating fins 42 and a frame 43, and a power semiconductor is provided in the metal case 40. It showed about the case where the module was stored.

しかし、図９に示すように、第１封止樹脂６により封止されたパワー半導体モジュールが絶縁層５１を介して第４導体３６、第５導体３７に接続され、さらに接合部３９を介して冷却部４８に接続されていてもよい。   However, as shown in FIG. 9, the power semiconductor module sealed by the first sealing resin 6 is connected to the fourth conductor 36 and the fifth conductor 37 via the insulating layer 51, and further via the bonding portion 39. The cooling unit 48 may be connected.

この場合でも、第１導体３３のパワー半導体素子３１を接続する面には、保護膜４６に対向する位置に突出部３３ｐが設けられている。突出部は３３ａ少なくとも保護膜４６の幅と同じかそれよりも大きい幅で形成されている。突出部の側壁３３ｂは、投影面上で保護膜４６の側壁４６ａと同じかそれより外側になるように設けられている。また、突出部３３ｐの平面パターンは、配線４５の上面を覆うように設けられた保護膜４６のパターンに沿って設けられている。これにより、実施形態１と同様の効果が得られる。   Also in this case, the protrusion 33 p is provided at the position facing the protective film 46 on the surface of the first conductor 33 to which the power semiconductor element 31 is connected. The protrusion is formed to have a width 33a at least equal to or greater than the width of the protective film. The side wall 33 b of the protrusion is provided on the projection plane to be the same as or outside the side wall 46 a of the protective film 46. The planar pattern of the projecting portion 33 p is provided along the pattern of the protective film 46 provided to cover the upper surface of the wiring 45. Thereby, the same effect as that of the first embodiment can be obtained.

その他、本発明は、上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で、種々変形して適用することが可能である。   In addition, the present invention is not limited to the above embodiment, and various modifications can be made within the scope of the present invention.

（実施例３）
また、実施形態１においては、図６に示したように、第１導体３３に設ける突出部３３ｐの平面パターンは、配線４５の上面を覆うように設けられた保護膜４６のパターンに全体を覆うように突出部３３ｐを設けている。 (Example 3)
Further, in the first embodiment, as shown in FIG. 6, the planar pattern of the projecting portion 33 p provided on the first conductor 33 entirely covers the pattern of the protective film 46 provided to cover the upper surface of the wiring 45. Thus, the protrusion 33p is provided.

保護膜４６端部での電極膜４４の応力低減効果は、図６に示したように、配線パターンに沿って突出部３３ｐを設けた場合、効果が最も大きいことを応力解析により確認している。   The stress reduction effect of the electrode film 44 at the end of the protective film 46 is confirmed by stress analysis that the effect is the largest when the protrusion 33 p is provided along the wiring pattern as shown in FIG. .

しかし、図１０に示されるように、本実施形態のように配線パターン全体を覆うように突出部３３ｐを設けた場合でも、電極膜４４の応力を低減できる。また、突出部３３ｐの平面パターンが単純となるため、製造しやすいというメリットがある。   However, as shown in FIG. 10, even when the protruding portion 33 p is provided to cover the entire wiring pattern as in the present embodiment, the stress of the electrode film 44 can be reduced. In addition, since the planar pattern of the protruding portion 33p is simple, there is an advantage that it is easy to manufacture.

上述した実施の形態では、放熱部材４１の放熱フィン４２の形状をピンフィンとしたが、他の形状、例えばストレートフィンやコルゲートフィンであっても良い。   In the embodiment described above, the shape of the heat dissipating fins 42 of the heat dissipating member 41 is a pin fin, but it may be another shape, for example, a straight fin or a corrugated fin.

また、上述した実施の形態では、電気自動車やハイブリッド自動車に搭載される車載用のパワー半導体装置を例に説明したが、パワー半導体素子３１の両面に導体が接続部により接続されている両面冷却式のパワー半導体装置であれば、本発明を同様に適用することができる。   In the embodiment described above, the on-vehicle power semiconductor device mounted on an electric car or a hybrid car has been described as an example, but a double-sided cooling type in which a conductor is connected to both sides of the power semiconductor element 31 by a connection portion The present invention can be similarly applied to any power semiconductor device.

６…第１封止樹脂、７…第２封止樹脂、３１…パワー半導体素子、３２…接合材、３２ａ…はんだ厚、３２ｂ…はんだ厚、３３…第１導体、３３ａ…上面、３３ｂ…側壁、３３ｐ…突出部、３４…第２導体、３５…第３導体、３６…第４導体、３７…第５導体、３８…接合材、３９…接合材、４０…金属ケース、４１…放熱部材、４２…放熱フィン、４３…枠体、４４…電極膜、４５…配線、４６…保護膜、４７…電極パッド、４８…冷却部、５１…絶縁層、１００…パワーモジュール、２００…電力変換装置、２０１…筐体、２０２…底蓋、２０３ａ…入口用配管、２０３ｂ…出口用配管、２１０…冷却用空間、２１１…周壁、２２１…側壁、２２０…支持部材、２３１…シール部材、２４０…カバー部材、２４１…開口部、２５０…コンデンサモジュール、２５１…コンデンサ素子、２６１…直流側バスバーアセンブリ、２６２…制御回路基板アセンブリ、２６３…交流側バスバーアセンブリ DESCRIPTION OF SYMBOLS 6 ... 1st sealing resin, 7 ... 2nd sealing resin, 31 ... Power semiconductor element, 32 ... Bonding material, 32a ... Solder thickness, 32b ... Solder thickness, 33 ... 1st conductor, 33a ... Upper surface, 33b ... Side wall , 33p: projection, 34: second conductor, 35: third conductor, 36: fourth conductor, 37: fifth conductor, 38: bonding material, 39: bonding material, 40: metal case, 41: heat dissipation member, DESCRIPTION OF SYMBOLS 42 ... Thermal radiation fin, 43 ... Frame body, 44 ... Electrode film, 45 ... Wiring, 46 ... Protective film, 47 ... Electrode pad, 48 ... Cooling part, 51 ... Insulating layer, 100 ... Power module, 200 ... Power converter, Reference Signs List 201 housing 202 bottom cover 203a inlet piping 203b outlet piping 210 cooling space 211 peripheral wall 221 side wall 220 support member 231 seal member 240 cover member , 241 ... opening, 250 ... con Capacitors module, 251 ... capacitor element, 261 ... DC-side bus bar assembly, 262 ... control circuit board assembly, 263 ... AC side bus bar assembly

Claims (4)

半導体素子と、
前記半導体素子を挟みかつ当該半導体素子と半田材を介して、それぞれ接続される第１導体及び第２導体と、を備え、
前記半導体素子は、一方の面に第１電極と、他方の面に第２電極と、当該一方の面に配線と、当該配線を覆う保護摸とを有し、
前記第１導体は、前記半導体素子の前記一方の面側に配置され、
さらに前記第１導体は、前記保護摸と対向する部分に他の部分より突出する突出部を有するパワー半導体装置。 A semiconductor element,
And a first conductor and a second conductor connected to the semiconductor element and connected to the semiconductor element via a solder material,
The semiconductor device has a first electrode on one side, a second electrode on the other side, a wire on the one side, and a protective cover covering the wire.
The first conductor is disposed on the one surface side of the semiconductor element,
The power semiconductor device according to claim 1, wherein the first conductor further includes a protrusion that protrudes from another portion at a portion facing the protective wedge. 請求項１に記載のパワー半導体装置であって、
前記突出部の幅が前記保護膜の幅よりも長く、かつ前記突出部の側壁は保護膜側壁よりも外側に位置するパワー半導体装置。 The power semiconductor device according to claim 1,
The power semiconductor device, wherein the width of the protrusion is longer than the width of the protective film, and the side wall of the protrusion is located outside the side wall of the protective film. 請求項１に記載のパワー半導体装置であって、
前記突出部が前記配線の平面パターンに沿って形成され、前記配線を覆う前記保護膜の幅よりも長く、かつ前記突出部側壁は保護膜側壁よりも外側に位置するパワー半導体装置。 The power semiconductor device according to claim 1,
The power semiconductor device, wherein the projecting portion is formed along a planar pattern of the wiring, is longer than the width of the protective film covering the wiring, and the sidewall of the projecting portion is located outside the protective film sidewall. 請求項１に記載のパワー半導体装置であって、
前記突出部が前記配線の平面パターンを覆うように形成されるパワー半導体装置。 The power semiconductor device according to claim 1,
The power semiconductor device formed so that the projection part may cover the plane pattern of the wiring.
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WO2022071099A1 (en) * 2020-10-01 2022-04-07 京セラドキュメントソリューションズ株式会社 Fluid-cooling type cold plate and method for producing same

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JP2011066377A (en) * 2009-08-18 2011-03-31 Denso Corp Semiconductor device and method of manufacturing the same

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JP2011066377A (en) * 2009-08-18 2011-03-31 Denso Corp Semiconductor device and method of manufacturing the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022071099A1 (en) * 2020-10-01 2022-04-07 京セラドキュメントソリューションズ株式会社 Fluid-cooling type cold plate and method for producing same

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