JP2019121784A5 - - Google Patents

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Publication number
JP2019121784A5
JP2019121784A5 JP2018206819A JP2018206819A JP2019121784A5 JP 2019121784 A5 JP2019121784 A5 JP 2019121784A5 JP 2018206819 A JP2018206819 A JP 2018206819A JP 2018206819 A JP2018206819 A JP 2018206819A JP 2019121784 A5 JP2019121784 A5 JP 2019121784A5
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JP
Japan
Prior art keywords
exhaust
opened
processing container
film
reference numeral
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JP2018206819A
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English (en)
Japanese (ja)
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JP2019121784A (ja
JP7067424B2 (ja
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Application filed filed Critical
Priority to TW107144908A priority Critical patent/TWI813607B/zh
Priority to KR1020180167758A priority patent/KR102184067B1/ko
Priority to US16/232,532 priority patent/US10665470B2/en
Priority to CN201811610534.0A priority patent/CN109979815B/zh
Publication of JP2019121784A publication Critical patent/JP2019121784A/ja
Priority to US16/839,176 priority patent/US20200234974A1/en
Publication of JP2019121784A5 publication Critical patent/JP2019121784A5/ja
Application granted granted Critical
Publication of JP7067424B2 publication Critical patent/JP7067424B2/ja
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JP2018206819A 2017-12-27 2018-11-01 エッチング方法及びエッチング装置 Active JP7067424B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW107144908A TWI813607B (zh) 2017-12-27 2018-12-13 蝕刻方法及蝕刻裝置
KR1020180167758A KR102184067B1 (ko) 2017-12-27 2018-12-21 에칭 방법 및 에칭 장치
US16/232,532 US10665470B2 (en) 2017-12-27 2018-12-26 Etching method and etching apparatus
CN201811610534.0A CN109979815B (zh) 2017-12-27 2018-12-27 蚀刻方法和蚀刻装置
US16/839,176 US20200234974A1 (en) 2017-12-27 2020-04-03 Etching Method and Etching Apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017251800 2017-12-27
JP2017251800 2017-12-27

Publications (3)

Publication Number Publication Date
JP2019121784A JP2019121784A (ja) 2019-07-22
JP2019121784A5 true JP2019121784A5 (cg-RX-API-DMAC7.html) 2021-07-26
JP7067424B2 JP7067424B2 (ja) 2022-05-16

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ID=67308019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018206819A Active JP7067424B2 (ja) 2017-12-27 2018-11-01 エッチング方法及びエッチング装置

Country Status (2)

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JP (1) JP7067424B2 (cg-RX-API-DMAC7.html)
TW (1) TWI813607B (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102184067B1 (ko) * 2017-12-27 2020-11-27 도쿄엘렉트론가부시키가이샤 에칭 방법 및 에칭 장치
JP7419783B2 (ja) * 2019-12-11 2024-01-23 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7521229B2 (ja) * 2020-03-30 2024-07-24 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7521230B2 (ja) * 2020-03-30 2024-07-24 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP7472634B2 (ja) * 2020-04-28 2024-04-23 東京エレクトロン株式会社 エッチング方法及びエッチング装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4522892B2 (ja) 2005-03-09 2010-08-11 東京エレクトロン株式会社 微細パターン形成方法
CN100565833C (zh) 2005-03-22 2009-12-02 Nxp股份有限公司 用于低k电介质的侧壁孔密封
US8058183B2 (en) 2008-06-23 2011-11-15 Applied Materials, Inc. Restoring low dielectric constant film properties
EP2849212B1 (en) 2013-09-17 2018-05-23 IMEC vzw Protection of porous substrates before treatment
JP6499001B2 (ja) 2015-04-20 2019-04-10 東京エレクトロン株式会社 多孔質膜をエッチングする方法
US9659788B2 (en) 2015-08-31 2017-05-23 American Air Liquide, Inc. Nitrogen-containing compounds for etching semiconductor structures
JP6875152B2 (ja) 2017-03-03 2021-05-19 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 多孔質膜封孔方法および多孔質膜封孔用材料

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