JP2019113418A - Semiconductor device manufacturing method - Google Patents

Abstract

To improve the reliability of a semiconductor device.SOLUTION: The present invention includes a step in which the contact part PAc1 of two probe pins PA1 connected to a test circuit is brought into contact with an external terminal electrically connected to a semiconductor chip mounted in a semiconductor device and, thereby, an electrical characteristic test by a Kelvin contact method is carried out. Projections T1a, T1b, T1c are formed at the farthest tip of the contact part PAc1. The projections T1a, T1b are formed in shape of a pyramid, while the projection T1c is formed in shape of a rectangle. Heights h1 of the projections T1a, T1b, T1c from a connecting face Tf2 of a plunger part PAp1 between a body part PAt1 and a contact part PAc1 are the same.SELECTED DRAWING: Figure 9

Description

  The present invention relates to a manufacturing technology of a semiconductor device, and more particularly to a technology effectively applied to a process of testing an electrical property by pressing a test terminal against an external terminal of the semiconductor device.

  Japanese Patent Application Laid-Open No. 2012-112709 (Patent Document 1) describes a probe pin applied to the Kelvin contact method in which two contact probes are arranged on one external terminal provided in a semiconductor device.

JP, 2012-112709, A

  The inventor of the present invention is examining the contact stability and the life extension of the probe pin with respect to the external terminal of the semiconductor device in the method of manufacturing the semiconductor device including the step of performing the electrical property test by the Kelvin contact method.

  In the method of manufacturing a semiconductor device, improvement in the reliability of the semiconductor device is desired.

  Other problems and novel features will be apparent from the description of the present specification and the accompanying drawings.

  In a method of manufacturing a semiconductor device according to an embodiment, a contact region of two probe pins connected to a test circuit is brought into contact with an external terminal electrically connected to a semiconductor chip included in the semiconductor device, It includes a step of conducting an electrical property test by the Kelvin contact method. Each of the two probe pins includes a contact portion including a contact region to the external terminal, and a plunger portion having the contact portion at a tip, and the contact portion is a first protrusion arranged in parallel, It has a second protrusion and a third protrusion. The respective tips of the first protrusion, the second protrusion, and the third protrusion have the same height position in the extending direction of the contact portion. The first protrusion is located between the second protrusion and the third protrusion, and the contact surface of the first protrusion with respect to the external terminal is each of the second protrusion and the third protrusion with respect to the external terminal. Greater than the contact surface of

  According to one embodiment, the reliability of the semiconductor device can be improved.

FIG. 1 is a transparent plan view showing an outline of an internal structure of a semiconductor device of an embodiment. It is a top view which shows the back surface side of the semiconductor device shown in FIG. (A) is sectional drawing along the AA line of FIG. 1, (b) is sectional drawing along the BB line of FIG. FIG. 4 is a process flow diagram showing a manufacturing process of the semiconductor device shown in FIGS. 1 to 3. (A) is an equivalent circuit diagram of a tester for explaining the principle of the Kelvin contact method, (b) is an equivalent circuit diagram of the tester for explaining the principle of the two-terminal measurement method. It is principal part sectional drawing which expands and shows a part of test device of one embodiment. FIG. 7 is a plan view showing the arrangement of probe pins with respect to external terminals provided in the semiconductor device in the electrical characteristic test of the semiconductor device of the embodiment. (A) is a partial enlarged plan view showing enlarged part D1 of FIG. 7, (b) is a partial enlarged plan view showing enlarged part E1 of FIG. 7, (c) is part F2 of FIG. 7 7D is a partially enlarged plan view showing a state in which the contact portion of the probe pin of Study Example 1 is brought into contact with the external terminal in the F2 portion of FIG. 7. (A) is an enlarged perspective view showing a contact portion of a probe pin according to an embodiment, (b) is a plan view showing an enlarged contact portion of the probe pin shown in FIG. 9A is an enlarged front view showing a contact portion of the probe pin shown in FIG. 9A, and FIG. 9D is a side view showing an enlarged contact portion of the probe pin shown in FIG. (A) is a perspective view which shows the manufacturing process of the probe pin shown to Fig.9 (a), (b) is a side view which shows the manufacturing process of the probe pin shown to Fig.9 (a). (A) is a partial expanded plan view which shows the state which made the contact part of the probe pin of one Embodiment contact the external terminal in F2 part of FIG. 7, (b) is a probe shown to Fig.11 (a). It is an electron microscope image of a mark. (A) is an enlarged perspective view showing a contact portion of the probe pin of the first examination example, and (b) is a case where the probe pin of the first examination example is brought into contact with an external terminal provided in a semiconductor device. FIG. 6C is a side view of the external terminal viewed from the short side direction of the external terminal when the probe pin of the first examination example is brought into contact with the external terminal. (A) is an enlarged perspective view showing the contact portion of the probe pin of the second examination example, (b) is an enlarged side view showing the contact part of the probe pin of the second examination example, (c When the probe pin of the 2nd examination example is made to contact an external terminal, it is the side view seen from the short side direction of the external terminal. (A) is a top view which shows arrangement | positioning of the probe pin with respect to the external terminal with which a semiconductor device is equipped in the electrical property test of the semiconductor device of a 3rd examination example, (b) expands D1 part of Fig.14 (a). FIG. 14C is a partially enlarged plan view showing a portion F2 of FIG. 14A in an enlarged manner. When each of the probe pin of one embodiment, the probe pin of the 2nd examination example, and the probe pin of the 1st examination example are made to contact an external terminal, it is the side view seen from the short side direction of the external terminal. . (A) is an enlarged plan view showing the contact portion of the probe pin of the first modification, (b) is an enlarged front view showing the contact portion of the probe pin shown in FIG. c) is an enlarged side view showing the contact portion of the probe pin shown in FIG. 16 (a), and FIG. 16 (d) is an external view of the contact portion of the probe pin shown in FIG. It is a partial enlarged plan view which shows the state which made the terminal contact. (A) is an enlarged plan view showing the contact portion of the probe pin of the second modified example, (b) is an enlarged front view showing the contact portion of the probe pin shown in FIG. c) is an enlarged side view showing the contact portion of the probe pin shown in FIG. 17A, and FIG. 17D is an external view of the contact portion of the probe pin shown in FIG. It is a partial enlarged plan view which shows the state which made the terminal contact. It is a see-through | perspective top view which shows the outline | summary of the internal structure of the semiconductor device of 2nd Embodiment. FIG. 19 is a cross-sectional view showing a structure in which the semiconductor device shown in FIG. 18 is cut along the line A-A in FIG. 18; FIG. 20 (a) is an enlarged sectional view of a main part showing a region where a probe pin of a test apparatus is in contact with the semiconductor device of the second embodiment, and FIG. 20 (b) is an outer view of the semiconductor device shown in FIG. It is a partial enlarged plan view which shows the state which made the contact part of the probe pin of 1st Embodiment contact a lead part.

(Description of description form, basic terms and usage in this application)
In the present application, the description of the embodiment will be described by dividing it into a plurality of sections etc. as needed for convenience, but unless explicitly stated otherwise, these are not mutually independent and different from each other, and described Before and after, each part of a single example, one being a partial detail or part or all of a modification of the other. Also, in principle, similar parts will not be described repeatedly. In addition, each component in the embodiment is not essential unless clearly indicated otherwise, unless it is theoretically limited to the number and clearly from the context.

  Similarly, in the description of the embodiment and the like, regarding the material, the composition, etc., even if "X consisting of A" etc. is mentioned, elements other than A unless clearly stated otherwise and clearly from the context, elements other than A It does not exclude things including. For example, the component means "X containing A as a major component". For example, the term "silicon member" is not limited to pure silicon, but is a member containing SiGe (silicon-germanium) alloy, multi-element alloy containing other silicon as a main component, other additives, etc. Needless to say, it also includes In addition, even if gold plating, Cu layer, nickel plating, etc. are not specifically stated otherwise, not only pure ones but also members having gold, Cu, nickel etc. as main components Shall be included.

  Furthermore, even when a specific numerical value or quantity is referred to, in the case where it is clearly stated that it is not specifically stated, a numerical value exceeding that specific numerical value is excluded unless it is theoretically limited to that number and clearly not from the context. It may be present or may be less than the specific value.

  Further, in each drawing of the embodiment, the same or similar parts are indicated by the same or similar symbols or reference numbers, and the description will not be repeated in principle.

  Further, in the attached drawings, hatching may be omitted even in the case of a cross section in the case where it becomes rather complicated or when the distinction from the void is clear. In relation to this, when it is clear from the description etc., the outline of the background may be omitted even if it is a hole closed in a plane. Furthermore, even if it is not a cross section, hatching may be added to clarify that it is not an air gap.

Embodiment 1
[About the structure of the semiconductor device]
1 is a plan view of the semiconductor device SD1 of the present embodiment, FIG. 2 is a back view of the semiconductor device SD1 shown in FIG. 1, and FIG. 3A shows the semiconductor device SD1 shown in FIG. FIG. 3B is a cross-sectional view showing a structure of the semiconductor device SD1 shown in FIG. 1 taken along the line B-B of FIG. 1. It is.

  The semiconductor device (semiconductor package) SD1 of the present embodiment shown in FIGS. 1 to 3 is a semiconductor device in the form of a resin-sealed, surface-mounted semiconductor package, and here a QFN (Quad Flat Non-leaded package). ) Semiconductor device. Hereinafter, the configuration of the semiconductor device SD1 will be described with reference to FIGS. 1 to 3.

  The semiconductor device SD1 of the present embodiment shown in FIGS. 1 to 3 includes a semiconductor chip CP, a die pad (chip mounting portion, tab) DP on which the semiconductor chip CP is mounted, and a plurality of external terminals formed of a conductor. LD, a plurality of wires BW electrically connecting the plurality of pad electrodes PD of the semiconductor chip CP and the plurality of external terminals LD, and a sealing portion (resin sealing portion, sealing body) MR sealing the same And.

  The sealing portion MR as the resin sealing portion (resin sealing body) has a rectangular planar shape having four sides. The sealing portion MR is made of, for example, a resin material such as a thermosetting resin material, and can also include a filler and the like. For example, the sealing portion MR can be formed using an epoxy resin containing a filler or the like. In addition to epoxy resins, for the purpose of reducing stress, for example, a biphenyl thermosetting resin to which a phenolic curing agent, silicone rubber, filler and the like are added is used as the material of the sealing portion MR. It is good.

  The plurality of external terminals LD are made of a conductor, preferably made of a metal material such as copper (Cu) or a copper alloy. The plurality of external terminals LD are sealed in the sealing portion MR. However, at least a part of each external terminal LD is exposed from the lower surface of the sealing portion MR. The exposed surface (exposed portion) from the lower surface of the sealing portion MR in each external terminal LD functions as an external connection terminal portion (external terminal) of the semiconductor device SD1. As shown in FIG. 6 described later, the thickness t1 of the portion of the external terminal LD exposed from the sealing portion MR is, for example, 0 to 50 μm.

  The die pad DP is a chip mounting portion on which the semiconductor chip CP is mounted. The planar shape of the die pad DP is, for example, rectangular. Although the die pad DP is sealed in the sealing portion MR, the lower surface of the die pad DP is exposed from the lower surface of the sealing portion MR. Although FIG. 2 shows the case where the lower surface of the die pad DP is exposed from the lower surface of the sealing portion MR, as another form, the die pad DP is not exposed from the lower surface of the sealing portion MR. In this case, the lower surface of the die pad DP is covered with the sealing portion MR.

  The die pad DP is made of a conductor, preferably made of a metal material such as copper (Cu) or a copper alloy. It is more preferable if the die pad DP and the plurality of external terminals LD constituting the semiconductor device SD1 are formed of the same material. As a result, the lead frame in which the die pad DP and the plurality of external terminals LD are connected can be easily manufactured, and the manufacture of the semiconductor device SD1 using the lead frame can be facilitated.

  The plurality of external terminals LD included in the semiconductor device SD1 are arranged around the die pad DP in a plan view. Therefore, the plurality of external terminals LD included in the semiconductor device SD1 are arranged (arranged) between the die pad DP and the side surfaces of the sealing portion MR along the side surfaces of the sealing portion MR. Specifically, the plurality of external terminals LD included in the semiconductor device SD1 of the present embodiment are arranged in two rows along the periphery of the die pad DP in a plan view. The plurality of external terminals LD include an outer terminal LD1 on the inner peripheral side and an external terminal LD2 on the outer peripheral side. The external terminal LD1 is disposed along the periphery of the die pad DP in plan view, and the external terminal LD2 is disposed along the outer periphery of the semiconductor device SD1. The external terminals LD1 and LD2 have a rectangular shape in plan view. In the external terminals LD1a, LD1b, LD2a, and LD2b closest to the suspension lead TL1, the corner adjacent to the suspension lead TL1 is C-chamfered. The external terminals LD2c disposed at the corners (corners) of the semiconductor device SD1 are square and not C-chamfered.

  Ten external terminals LD1 are arranged at intervals d1 within the length of one side of the die pad DP. The interval d1 is a distance between the centers of the external terminals LD1 adjacent to each other in the long side direction (longitudinal direction, longitudinal direction) of the external terminal LD1 in plan view. Further, thirteen external terminals LD2 are arranged within the length of one side of the semiconductor device SD1 with an interval d2. The space d2 is a distance between the centers of the external terminals LD2 adjacent to each other in the long side direction of the external terminal LD2 in plan view. An interval d2 between the external terminals LD2 adjacent to each other is an interval at which nine external terminals LD2 are disposed within the length of one side of the die pad DP. Therefore, the interval d1 between the adjacent external terminals LD1 and the interval d2 between the adjacent external terminals LD2 are different, and the interval d2 is larger than the interval d1. Accordingly, the external terminal LD1 and the external terminal LD2 do not completely face each other in the short side direction (the short direction, the width direction). For convenience of explanation, the external terminal LD1 and the external terminal LD2 closest to each other will be referred to as the external terminal LD1 and the external terminal LD2 which are adjacent to each other in the short side direction of the external terminal LD1 and the external terminal LD2. That is, in the case of the external terminal LD1 and the external terminal LD2 adjacent to each other in the short side direction, the external terminal LD1 and the external terminal LD2 closest to each other are indicated.

  An interval d1 between adjacent external terminals LD1 is, for example, 0.5 mm, and an interval d2 between adjacent external terminals LD2 is, for example, 0.55 mm. The length d3 of one side of the external terminal LD2c is, for example, 0.25 mm. The width d4 of the external terminals LD1, LD2 is, for example, 0.2 to 0.25 mm, and the length d5 of the external terminals LD1, LD2 is, for example, 0.3 mm.

  The semiconductor chip CP is mounted on the upper surface of the die pad DP with the front surface (upper surface) facing up and the back surface (lower surface) facing the die pad DP. In the case of FIG. 2, the planar dimension (planar area) of the die pad DP is larger than the planar dimension (planar area) of the semiconductor chip CP, and the semiconductor chip CP is enclosed on the upper surface of the die pad DP in plan view. As another mode, the planar dimension of the die pad DP may be smaller than the planar dimension of the semiconductor chip CP, and in that case, the outer peripheral portion of the semiconductor chip CP protrudes from the die pad DP in plan view.

  Here, in the semiconductor chip CP, among the two main surfaces located on the opposite sides, the main surface on which the plurality of pad electrodes PD are formed is referred to as the surface of the semiconductor chip CP, and the opposite surface to this surface The main surface on the side facing the die pad DP is called the back surface of the semiconductor chip CP.

  The semiconductor chip CP is manufactured, for example, by forming various semiconductor elements or semiconductor integrated circuits on the main surface of a semiconductor substrate (semiconductor wafer) made of single crystal silicon or the like, and separating the semiconductor substrate into semiconductor chips by dicing or the like. It is The semiconductor chip CP has a rectangular planar shape intersecting its thickness.

  The back surface of the semiconductor chip CP is bonded and fixed to the top surface of the die pad DP via a bonding material (bonding material layer, bonding layer) BD. The semiconductor chip CP is sealed in the sealing portion MR and is not exposed from the sealing portion MR. The bonding material BD may be a conductive bonding material or an insulating bonding material.

  A plurality of pad electrodes (pads, bonding pads) PD are formed on the surface of the semiconductor chip CP. The plurality of pad electrodes PD of the semiconductor chip CP and the plurality of external terminals LD are electrically connected to each other through a plurality of wires (bonding wires) BW. That is, one end of each wire BW is connected to the pad electrode PD of the semiconductor chip CP, and the other end of each wire BW is connected to the external terminal LD, whereby the pad electrode PD of the semiconductor chip CP and the external terminal LD Are electrically connected via the wire BW.

  The wire (bonding wire) BW is a conductive connection member, more specifically, a conductive wire. Since the wire BW is made of metal, it can also be regarded as a metal wire (thin metal wire). As the wire BW, a gold (Au) wire, a copper (Cu) wire, an aluminum (Al) wire or the like can be suitably used. The wire BW is sealed in the sealing portion MR and is not exposed from the sealing portion MR.

  The plurality of pad electrodes PD arranged along the side surfaces of the surface of the semiconductor chip CP are electrically connected to the plurality of external terminals LD arranged along the side surfaces of the sealing portion MR via the plurality of wires BW. It is connected.

[About the manufacturing process of the semiconductor device]
Next, a manufacturing process of the semiconductor device SD1 of the present embodiment will be described with reference to FIG. FIG. 4 is a process flow diagram showing a manufacturing process of the semiconductor device SD1 of the present embodiment.

1. Base material preparation process (S11)
First, in the base material preparation step (S11) shown in FIG. 4, although not shown, a lead frame as a base material on which the semiconductor chip CP is mounted is prepared. In the product formation region of the lead frame, a plurality of suspension leads TL having a die pad DP for mounting the semiconductor chip CP and a plurality of external terminals LD are provided. Although not shown, the product formation area corresponds to one semiconductor device SD1 shown in FIG. 1, and the lead frame is cut around the product formation area in the singulation step (S17) shown in FIG. There is a cutting area for the A die pad DP and a plurality of external terminals LD (LD1, LD2) for manufacturing the semiconductor device SD1 are disposed in each product formation region of the lead frame.

  Each product formation area of the lead frame has a die pad DP as a chip mounting portion, a plurality of suspension leads TL for supporting the die pad DP, and a plurality of external terminals LD.

  In plan view, in each product formation region, a die pad DP is disposed substantially at the center, and a plurality of external terminals LD (LD1, LD2) are disposed around the die pad DP.

2. Semiconductor chip mounting process (S12)
Next, a semiconductor chip mounting step (die bonding step) (S12) is performed to mount and bond the semiconductor chip CP on the upper surface of the die pad DP in each product formation region of the lead frame via the bonding material BD. Fix it.

  In this semiconductor chip mounting step (S12), for example, a step of applying the bonding material BD on the upper surface of the die pad DP, and thereafter a step of mounting the semiconductor chip CP on the upper surface of the die pad DP, and then the bonding material BD. And a step of solidifying.

3. Electrical connection process (S13)
Next, an electrical connection step (wire bonding step) (S13) is performed, and a plurality of pad electrodes PD of the semiconductor chip CP in each product formation area and a plurality of external terminals LD (LD1, LD2) in the product formation area And are electrically connected to one another via a plurality of wires BW.

4. Sealing process (S14)
Next, resin sealing is performed in a sealing step (molding step) (S14) to form a sealing portion (collective sealing portion) MR as a resin sealing portion (resin sealing body), and a plurality of products are obtained. The die pad DP, the semiconductor chip CP, the wire BW, the external terminals LD (LD1, LD2) and the suspension lead TL in the formation region are sealed by the sealing portion MR. As a mold process, a transfer mold process is mentioned, for example.

  The sealing portion MR is made of, for example, a resin material such as a thermosetting resin material, and can also include a filler and the like. For example, the sealing portion MR can be formed using an epoxy resin containing a filler or the like. For example, after the lead frame is placed in the mold so that a plurality of product forming areas of the lead frame are located in the cavity of the mold, a sealing resin material is injected into the cavity of the mold, and this sealing is performed. The sealing resin material can be cured by heating to form the sealing portion MR.

  When the sealing portion MR is formed, at least a part of each external terminal LD in each product formation region is exposed from the lower surface of the sealing portion MR.

5. Plating process (S15)
Next, a plating layer is formed on the lower exposed surfaces of the external terminals LD1 and LD2 exposed from the lower surface of the sealing portion MR and the lower surface of the die pad DP exposed from the lower surface of the sealing portion MR. The plating layer is a metal layer, but is made of, for example, a solder plating layer and can be formed using an electrolytic plating method or the like.

6. Lead cutting process (S16)
Next, the lead frame and the sealing portion MR are cut (diced) into each product formation area and separated (divided).

  In the lead cutting step (dicing step) (S16), the sealing portion MR and the lead frame are cut by a dicing blade (dicing saw) as a rotating cutting blade (rotary blade).

7. Individualization process (S17)
Next, in the singulation step (S17) shown in FIG. 4, the suspension leads TL are cut to singulate the semiconductor device SD1 on which the semiconductor chip CP is mounted. For example, a method of cutting by pressing using a cutting die can be applied to the singulation method.

8. Electrical characteristics test process (S18)
Next, in the electrical characteristic test step (S18) shown in FIG. 4, a current is supplied to the semiconductor device, and it is confirmed that there is no disconnection in the circuit or that the semiconductor device has a predetermined (within an allowable range) electrical characteristic. Test to be done. Moreover, in this process, based on the result of an electrical property test, determination of non-defective goods and inferior goods is performed, and inferior goods are excluded. After the present process, an appearance test process is performed, and those which pass the test become the semiconductor device SD1 of the finished product shown in FIGS.

  Hereinafter, the electrical property test process (S18) and the electrical property test apparatus used in the electrical property test process (S18) will be described in detail.

<About electrical characteristics test process>
FIG. 5 (a) is an equivalent circuit diagram of a tester for explaining the principle of the Kelvin contact method, and FIG. 5 (b) is an equivalent circuit diagram of the tester for explaining the principle of the two-terminal measurement method.

  The electrical property test step (S18) of the present embodiment includes the Kelvin contact method. Generally, to measure, for example, the resistance value (impedance) of a circuit, probe pins (test terminals, contact pins, contact probes, probes, probe needles, probes) are brought into contact with terminals on both sides of the circuit to be measured. A two-terminal measurement method is used to measure the voltage drop when current is applied to the measurement circuit. However, in the two-terminal measurement method, when the impedance of the circuit to be measured is low, errors may occur due to the contact resistance between the terminal and the probe pin and the line resistance of the measuring instrument (tester). Therefore, when the impedance of the circuit to be measured is low, a measurement method called Kelvin contact method (or four-terminal measurement method) is used instead of the two-terminal measurement method.

  As shown in FIG. 5B, in the case of measuring the impedance (Z) of the circuit under test by the voltage drop (Vz) when the current (I) flows in the circuit under test, the circuit under test according to the two-terminal measurement method The voltage drop (VM) is measured by bringing the probe pins into contact with the terminals on both sides of. However, in the two-terminal measurement method, in addition to the voltage drop (Vz) due to the impedance (Z) of the circuit to be measured, the contact resistance between the terminal and the probe pin and the voltage drop (Vrc1, Vrc2) due to the line resistance of the tester are added. (VM = Vz + Vrc1 + Vrc2). Therefore, when the impedance (Z) of the circuit to be measured is low, the measurement error due to the contact resistance or the wiring resistance becomes large, and a highly accurate measurement value can not be obtained.

  On the other hand, in the Kelvin contact method, the line (force line) for flowing current (I) to the circuit under test is separated from the line (sense line) for measuring the voltage drop (Vz) of the circuit under test. The voltage drop (VM) is measured by bringing two probe pins (a probe pin connected to a force line and a probe pin connected to a sense line) into contact with the terminals on both sides of. In this measurement method, a current does not flow in the sense line connected to the voltmeter (i = 0), so the voltage drop due to the contact resistance and the line resistance described above is cancelled, and the impedance of the circuit to be measured (Z Voltage drop (Vz) can only be measured (VM = Vz).

  For the above reasons, the Kelvin contact method is effective and essential for low resistance measurement of high current products such as motor driver products, power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) products, and regulator products. It is a measurement method.

  In the present embodiment, first, the semiconductor device SD1 shown in FIGS. 1 to 3 described above and a test apparatus TS shown in FIG. 6 described later are prepared. Thereafter, the plurality of probe pins PA (PAa, PAb) provided in the test apparatus TS are brought into contact with the plurality of external terminals LD provided in the semiconductor device SD1. In particular, in the Kelvin contact method, a test is performed by bringing a pair of probe pins PAa and PAb into contact with one external terminal LD. For example, a line (sense) in which the probe pin PAa is connected to a line (force line) for flowing current (I) to the circuit under test in the semiconductor device SD1 and the probe pin PAb is for measuring the voltage drop (Vz) of the circuit under test Connected to the line).

<About electrical property test equipment>
FIG. 6 is an essential part cross-sectional view showing a part of the test apparatus of the present embodiment in an enlarged manner. As shown in FIG. 6, a test apparatus TS for performing an electrical characteristic test on a semiconductor device SD1 is a probe provided with a pedestal (not shown) for disposing the semiconductor device SD1 and a plurality of probe pins PA (PAa, PAb) A guide (socket base) TG and a test board (performance board) TB are provided. A plurality of electrodes (lands) Ma and Mb are formed on the test substrate TB. The electrodes Ma and Mb are connected to wires (not shown) from a current supply circuit which is a test circuit formed on the test substrate TB and a voltage measurement circuit. In addition, below, the probe pin PA of this Embodiment is called probe pin PA1.

  Among the plurality of probe pins PA1, the configuration of the probe pin PAa and the configuration of the probe pin PAb are the same, but different reference numerals are given for convenience. The pair of probe pins PAa and PAb constitute a Kelvin contact probe. The probe pin PA1 includes a plunger portion PAp1 on the external terminal LD side of the semiconductor device SD1, a plunger portion PAp2 on the electrodes Ma and Mb side of the test substrate TB, and a metal spring PAs provided between the plunger portions PAp1 and PAp2. have. The plunger portion PAp1 on the external terminal LD side of the semiconductor device SD1 includes a main body portion PAt1 and a contact portion PAc1 in contact with the external terminal LD. The plunger portion PAp2 on the side of the electrodes Ma and Mb of the test substrate TB includes a main body portion and a contact portion in contact with the electrodes Ma and Mb, similarly to the plunger portion PAp1. As described later, protrusions T1a, T1b, and T1c are formed at the tip of the contact portion PAc1. The main body portion PAt1 is formed in a cylindrical shape.

  In the test apparatus TS of the present embodiment, by pressing the probe guide TG against the semiconductor device SD1 and the test substrate TB, the plunger portions PAp1 and PAp2 of the plurality of probe pins PAa and PAb respectively project from the probe guide TG. . As a result, the external terminal LD provided in the semiconductor device SD1 contacts the contact portion PAc1 of the plunger portion PAp1 of the probe pins PAa and PAb. Then, the electrodes Ma and Mb of the test substrate TB are in contact with the contact portions of the plunger portions PAp2 of the probe pins PAa and PAb. As a result, the semiconductor device SD1 and the test substrate TB are electrically connected, and the semiconductor device SD1 is inspected by the test circuit formed in the test substrate TB.

  At this time, the contact load between the contact portion PAc1 of the probe pins PAa and PAb and the external terminal LD of the semiconductor device SD1 is, for example, 20 gf (about 0.2 N) to 50 gf (about 0.5 N), 30 gf (about 0) .3 N) to 40 gf (about 0.4 N) are preferred. Here, the contact load is a load that the external terminal LD receives from the probe pins PAa and PAb when the contact portion PAc1 of the probe pins PAa and PAb is in contact with the external terminal LD of the semiconductor device SD1.

  As described above, the contact portion PAc1 of the probe pins PAa and PAb is a contact area of the probe pins PAa and PAb with the external terminal LD.

<About the arrangement of probe pins>
Next, the arrangement of the probe pins PAa and PAb in the probe guide TG will be described. FIG. 7 is a plan view showing the arrangement of probe pins PAa and PAb with respect to the external terminal LD in the electrical property test of the semiconductor device SD1 of the present embodiment. FIG. 8A is a partial enlarged plan view showing the D1 portion of FIG. 7 in an enlarged manner. FIG. 8B is a partially enlarged plan view showing the E1 portion of FIG. 7 in an enlarged manner. FIG. 8C is a partially enlarged plan view showing a portion F2 of FIG. 7 in an enlarged manner. FIG. 8D is a partially enlarged plan view showing a state in which the contact portion PAc 101 of the probe pin of Study Example 1 to be described later is brought into contact with the external terminal LD in the F2 portion of FIG.

  In the present embodiment, the external terminals LD for bringing the two probe pins PAa and PAb into contact in order to conduct the electrical property test by the Kelvin contact method are D1 part, D2 part, E1 part to E6 part and F1 in FIG. It is included in each of the part to F3 part. The external terminals LD as contact targets of the probe pins PAa and PAb included in the D1 and D2 portions are referred to as external terminals LD1 d and LD2 d. The external terminals LD as contact targets of the probe pins PAa and PAb included in the E1 to E6 parts are referred to as external terminals LD1 e and LD2 e. The external terminals LD as contact targets of the probe pins PAa and PAb included in the F1 to F3 parts are referred to as external terminals LD1af, LD1bf, LD2af, LD2bf, and LD2f.

  As shown in FIGS. 7 and 8A, in the D1 portion, the external terminal (first terminal) LD1 d and the external terminal (second terminal) LD2 d are mutually connected in the short side direction of the external terminal LD1 d and the external terminal LD2 d. It is adjacent. In the D1 portion, the external terminal (first terminal) LD1d and the external terminal (third terminal) LD1d adjacent to each other are adjacent to each other in the long side direction of the external terminal LD1d.

  The two probe pins PAa and PAb brought into contact with the external terminal LD1d are arranged to rotate in the direction of the long side of the external terminal LD1d. That is, the adjacent direction of the two probe pins PAa and PAb brought into contact with the external terminal LD1d is not parallel to any of the long side and the short side of the external terminal LD1d. The two probe pins PAa and PAb to be in contact with the external terminal LD2d are arranged to rotate in the direction of the long side of the external terminal LD2d. That is, the adjacent direction of the two probe pins PAa and PAb brought into contact with the external terminal LD2d is not parallel to any of the long side and the short side of the external terminal LD2d.

  In part D1, the adjacent directions of the two probe pins PAa and PAb with respect to each external terminal LD1d are parallel to each other. Further, the adjacent directions of the two probe pins PAa and PAb with respect to each external terminal LD2d are parallel to each other. Therefore, assuming that the arrangement of probe pins PAa and PAb with respect to external terminal LD1d is P1 and the arrangement of probe pins PAa and PAb with respect to external terminal LD2d is P2 in part D1, arrangement P1 and arrangement P2 rotate in different directions. doing.

  Specifically, in the arrangement P1, the probe pins PAa and PAb rotate counterclockwise with respect to the long side direction of the external terminal LD1d. Further, in the arrangement P2, the probe pins PAa and PAb rotate clockwise with respect to the long side direction of the external terminal LD2d. The rotation angle of each of the arrangement P1 and the arrangement P2 is preferably 45 °. In this case, the arrangement P1 and the arrangement P2 are orthogonal to each other.

  Further, as shown in FIG. 7, in the D2 portion, the two probe pins PAa and PAb to be in contact with the external terminal (first terminal) LD2d are arranged to be rotated in the long side direction of the external terminal LD2d. There is. That is, the adjacent direction of the two probe pins PAa and PAb brought into contact with the external terminal LD2d is not parallel to any of the long side and the short side of the external terminal LD2d. The arrangement of the probe pins PAa and PAb with respect to the external terminal LD2d of the D2 part is the same as the arrangement P2 of the probe pins PAa and PAb with respect to the external terminal LD2d of the D1 part.

  Further, as shown in FIGS. 7 and 8B, in the E1 portion, the external terminal (fourth terminal) LD1e and the external terminal (fifth terminal) LD2e are in the short side direction of the external terminal LD1e and the external terminal LD2e. Not adjacent to each other.

  The probe pins PAa and PAb to be in contact with the external terminal LD1e are disposed along the long side direction of the external terminal LD1e. In part E1, the probe pins PAa and PAb to be in contact with the external terminal LD2e are arranged along the long side direction of the external terminal LD2e. In part E1, the arrangement of the probe pins PAa and PAb with respect to the external terminal LD1e and the arrangement of the probe pins PAa and PAb with respect to the external terminal LD2e are P3. FIG. 8B also shows an arrangement P102 in which probe pins PAa and PAb to be in contact with the external terminal LD1e are arranged to rotate in the direction of the long side of the external terminal LD1e as described later. .

  Further, as shown in FIG. 7, in the E3 portion, the probe pins PAa and PAb to be in contact with the external terminal LD2e are disposed along the long side direction of the external terminal LD2e. The arrangement of the probe pins PAa and PAb with respect to the external terminal LD2e of the E3 portion is the same as the arrangement P3 of the probe pins PAa and PAb with respect to the external terminals LD1e and LD2e of the E1 portion.

  Further, as shown in FIG. 7, in E2 and E5, probe pins PAa and PAb to be in contact with the external terminal (sixth terminal) LD2e are arranged along the long side direction of the external terminal LD2e. The arrangement of the probe pins PAa and PAb with respect to the external terminals LD2e of the E2, E3 and E5 parts is the same as the arrangement P3 of the probe pins PAa and PAb with respect to the external terminals LD1e and LD2e of the E1 part.

  In E4 and E6, probe pins PAa and PAb to be in contact with the external terminal (sixth terminal) LD1e are arranged along the long side direction of the external terminal LD1e. The arrangement of the probe pins PAa and PAb with respect to the external terminals LD1e of the E4 and E6 parts is the same as the arrangement P3 of the probe pins PAa and PAb with respect to the external terminals LD1e and LD2e of the E1 part.

  In the F1 portion, the two probe pins PAa and PAb brought into contact with the external terminal (seventh terminal) LD1af are arranged to rotate in the direction of the long side of the external terminal LD1af. That is, the adjacent directions of the two probe pins PAa and PAb brought into contact with the external terminal LD1af are not parallel to any of the long side and the short side of the external terminal LD1af.

  Then, in the F1 portion, the two probe pins PAa and PAb brought into contact with the external terminal (eighth terminal) LD2af are arranged so as to rotate in the long side direction of the external terminal LD2af. That is, the adjacent directions of the two probe pins PAa and PAb brought into contact with the external terminal LD2af are not parallel to any of the long side and the short side of the external terminal LD2af.

  Further, in the F1 portion, the two probe pins PAa and PAb to be in contact with the external terminal LD2f are arranged to rotate in the long side direction of the external terminal LD2f. That is, the adjacent direction of the two probe pins PAa and PAb brought into contact with the external terminal LD2f is not parallel to any of the long side and the short side of the external terminal LD2f.

  In the F1 portion, assuming that the arrangement of the probe pins PAa and PAb with respect to the external terminal LD1af is P4, the arrangement P4 rotates so as to be parallel to the C chamfering direction of the external terminal LD1af. In portion F1, the arrangement of probe pins PAa and PAb with respect to external terminal LD2af is the same as arrangement P4 of probe pins PAa and PAb with respect to external terminal LD1af. In the F1 portion, the arrangement of the probe pins PAa and PAb with respect to the external terminal LD2f is the same as the arrangement P2 of the probe pins PAa and PAb with respect to the external terminal LD2d of the D1 portion.

  Further, as shown in FIG. 7 and FIG. 8C, assuming that the arrangement of the probe pins PAa and PAb with respect to the external terminal LD2af is P5 in the F2 portion, the arrangement P5 is a direction in which C chamfering of the external terminal LD2af is performed. It rotates so as to be parallel to. Further, as shown in FIG. 7, in the F2 portion, the arrangement of the probe pins PAa and PAb with respect to the external terminal LD2bf is rotated so as to be parallel to the C chamfering direction of the external terminal LD2bf. Therefore, the arrangement of the probe pins PAa and PAb with respect to the external terminal LD2bf is the same as the arrangement P4 of the probe pins PAa and PAb with respect to the external terminal LD2af of the F1 portion.

  In the F3 portion, the arrangement of the probe pins PAa and PAb with respect to the external terminal LD1bf and the external terminal LD2bf is the same as the arrangement P5 of the probe pins PAa and PAb with respect to the external terminal LD2af in the F2 portion. In the F3 portion, the arrangement of the probe pins PAa and PAb with respect to the external terminal LD2f is the same as the arrangement P2 of the probe pins PAa and PAb with respect to the external terminal LD2f of the F1 portion.

  In FIG. 8D, the contact portion PAc101 of the probe pin of Study Example 1 shown in FIG. 12A described later is brought into contact with the external terminal LD2af included in the F2 portion in the arrangement P5. The probe mark M101 is shown. The pair of probe marks M101 are each formed in a crescent shape, and the convex sides thereof are arranged to be in parallel with the direction in which the C-chamfering of the external terminal LD2af is performed.

<About the structure of the contact part of the probe pin>
Next, the probe pin PA1 of the present embodiment will be described with reference to FIGS. FIG. 9A is an enlarged perspective view showing the contact portion of the probe pin PA1 of the present embodiment, and FIG. 9B is an enlarged view of the contact portion of the probe pin PA1 shown in FIG. 9 (c) is an enlarged front view showing a contact portion of the probe pin PA1 shown in FIG. 9 (a), and FIG. 9 (d) is a probe pin PA1 shown in FIG. 9 (a). It is a side view which expands and shows a contact part. 10 (a) is a perspective view showing the manufacturing process of the probe pin PA1 shown in FIG. 9 (a), and FIG. 10 (b) is a side view showing the manufacturing process of the probe pin PA1 shown in FIG. is there.

  As shown in FIG. 9A, the plunger portion PAp1 of the probe pin PA1 of the present embodiment is formed in a cylindrical shape having a diameter D0, and the contact portion PAc1 of the plunger portion PAp1 has an elliptical inclined surface Tf1. doing. A protrusion (second protrusion) T1a, a protrusion (third protrusion) T1b, and a protrusion (first protrusion) T1c are formed at the tip of the contact portion PAc1. As shown in FIG. 9D, the angle of the inclined surface Tf1 of the contact portion PAc1 with respect to the connection surface Tf2 of the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc1 is α.

  As shown in FIG. 9B, in plan view, the protrusion T1c is formed on the diameter (straight line X passing through the center O) of the plunger portion PAp1 of the probe pin PA1. The protrusions T1a and T1b are formed at a distance L1 from the protrusion T1c. A groove (first groove) Tda is formed between the protrusion T1a and the protrusion T1c, and a groove (second groove) Tdb is formed between the protrusion T1b and the protrusion T1c. The grooves Tda and Tdb are formed in a V shape in a side view. The protrusions T1a and T1b are formed in a triangular pyramid shape, while the protrusions T1c are formed in a truncated square pyramid shape. Specifically, the protrusion T1c is formed in a rectangular shape having a width w1 and a length L2 in a plan view. That is, the projection T1c is chamfered, and the chamfered portion is formed in a rectangular shape. Accordingly, the contact area of the protrusion T1c with the external terminal LD is larger than the contact area of the protrusions T1a and T1b with the external terminal LD. The width w1 of the protrusion T1c may be 0, and in this case, the protrusion T1c is formed in a linear shape having a length L2 in plan view. That is, at this time, the tip of the protrusion T1c is sharp and has a corner.

  In a plan view, the center O side of the contact portion PAc1 of the protrusion T1c is located on a straight line connecting the protrusion T1a and the protrusion T1b. In the plan view, the outer peripheral side of the contact portion PAc1 of the protrusion T1c is located on the outer peripheral edge of the contact portion PAc1 together with the protrusions T1a and T1b.

  Further, as shown in FIGS. 9C and 9D, the height positions of the protrusions T1a, T1b, and T1c in the extending direction of the contact portion PAc1 are the same. That is, the heights h1 of the protrusions T1a, T1b, and T1c from the connection surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc1 are the same. That is, in FIG. 6, when the contact portion PAc1 of the probe pin PA1 contacts the external terminal LD, the protrusions T1a, T1b, and T1c simultaneously contact. Further, as shown in FIGS. 9C and 9D, the heights h2 of the protrusions T1a, T1b and T1c from the bottoms of the grooves Tda and Tdb are also the same.

  The plunger portion PAp1 of the probe pin PA1 is made of palladium (Pd) alloy. Specifically, it is a palladium-silver-copper (Pd-Ag-Cu) based alloy, and the content ratio of each element is, for example, 4: 3: 3 by weight. Since palladium has a low affinity to tin (Sn), which is the main component of the solder film, adhesion of the solder film to the surface of the contact portion PAc1 can be reduced in the electrical property test.

  The angle α of the inclined surface Tf1 of the contact portion PAc1 of the plunger portion PAp1 with respect to the axial direction of the plunger portion PAp1 of the probe pin PA1 is 45 °, for example. The height h2 of the projections T1a, T1b, T1c from the bottom of the grooves Tda, Tdb is preferably equal to or greater than the thickness t1 of the portion exposed from the sealing portion MR of the external terminal LD, specifically 50 μm or more Is preferred. The angle β of the notch (V-shape) of the grooves Tda and Tdb is, for example, 50 °. Further, a distance L1 between the protrusion T1a (the protrusion T1b) and the protrusion T1c is, for example, 50 μm. The length L2 of the protrusion T1c is, for example, 10 to 30 μm.

  Here, a method of manufacturing the probe pin PA1 of the present embodiment will be described. As shown in FIGS. 10A and 10B, first, a cylindrical plunger portion PAp1 is prepared. Thereafter, the plunger portion PAp1 is cut along the inclined surface Tf1. In the axial direction of the plunger portion PAp1, the region where the inclined surface Tf1 is formed is the contact portion PAc, and the other region is the main portion PAt1. That is, the contact portion PAc and the main body portion PAt1 are integrally formed, and the interface between the contact portion PAc and the main body portion PAt1 is a connection surface Tf2.

  Next, the contact portion PAc is cut along the horizontal surface Tf3. The height of the horizontal surface Tf3 from the connection surface Tf2 between the main body portion PAt1 and the contact portion PAc is h1.

  Next, the grooves Tda and Tdb are formed in the horizontal surface Tf3. Thus, the protrusions T1a, T1b, and T1c are formed on the contact portion PAc, and the contact portion PAc1 is completed. The depth from the horizontal surface Tf3 of the grooves Tda and Tdb is h2. Therefore, the height of the protrusions T1a, T1b, and T1c from the bottom of the grooves Tda and Tdb is h2.

  The probe pin PA1 of the present embodiment forms the grooves Tda and Tdb after forming the horizontal surface Tf3. By doing this, it is possible to make the distances (heights) of the protrusions T1a, T1b, T1c from the connecting surface Tf2 between the main portion PAt1 of the plunger portion PAp1 and the contact portion PAc1 identical. The protrusion T1c can be formed in a rectangular shape (or linear shape) in a plan view.

<About the probe mark>
FIG. 11A is a partially enlarged plan view showing a state in which the contact portion PAc1 of the probe pin PA1 of the present embodiment is in contact with the external terminal LD in the F2 portion of FIG. FIG. 11 (b) is an electron microscopic image of the probe mark shown in FIG. 11 (a).

  As shown in FIG. 11A, when the probe pin PA1 (PAa, PAb) of the present embodiment is brought into contact with the external terminal LD2bf included in the F2 portion with the arrangement P5, the protrusions T1a, T1b, T1c Probe marks M1a, M1b, and M1c are formed by biting into the external terminal LD2bf. The probe marks M1a, M1b, and M1c actually formed were evaluated by the backscattered electron image of the external terminal LD measured by SEM (Scanning Electron Microscope: scanning electron microscope). FIG. 11B is an electron microscope image obtained by measuring the backscattered electron image of the external terminal LD under the conditions of an acceleration voltage of 15.0 kV and a measurement magnification of 350 times.

  As shown in FIGS. 11 (a) and 11 (b), the protrusions T1a and T1b are formed in a triangular pyramid shape, while the protrusions T1c are formed in a rectangular shape (or linear shape) in plan view. ing. Therefore, probe marks M1a, M1b, and M1c corresponding to the shapes of the protrusions T1a, T1b, and T1c are respectively formed. In particular, the contact area of the protrusion T1c with the external terminal LD is larger than the contact area of the protrusions T1a and T1b with the external terminal LD.

  Further, in plan view, the center O side of the contact portion PAc1 of the protrusion T1c is located on a straight line connecting the protrusion T1a and the protrusion T1b. Therefore, the center O side end of the contact mark PAc1 of the probe mark M1c is formed on the same straight line as the center O side end of the contact mark PAc1 of the probe marks M1a and M1b.

  In the plan view, the outer peripheral side of the contact portion PAc1 of the protrusion T1c is located on the outer peripheral edge of the contact portion PAc1 together with the protrusions T1a and T1b. Therefore, the outer peripheral side end of the contact mark PAc1 of the probe mark M1c is formed on an arc drawn by the outer peripheral edge of the contact side PAc1 together with the outer peripheral side end of the contact mark PAc1 of the probe marks M1a and M1b.

  Further, the arrangement P5 of the pair of probe pins PAa and PAb is rotated so as to be parallel to the C-chamfered direction of the external terminal LD2bf. Therefore, the long side direction of the protrusion T1c of the probe pin PAa and the long side direction of the protrusion T1c of the probe pin PAb are parallel to the C-chamfered direction of the external terminal LD2bf.

  The height positions of the protrusions T1a, T1b, and T1c in the extending direction of the contact portion PAc1 are the same. Therefore, the depth from the surface of external terminal LD2bf of the bottom part of probe mark M1a, M1b, M1c is the same.

[About the process of examination]
The examination example which this inventor examined is demonstrated with reference to figures.

<Examination example 1>
12 (a) is an enlarged perspective view showing the contact portion of the probe pin PA of Study Example 1, and FIG. 12 (b) is the case where the probe pin PA of Study Example 1 is in contact with the external terminal LD. FIG. 12C is a side view as viewed from the short side direction of the external terminal LD when the probe pin PA of Study Example 1 is brought into contact with the external terminal LD. . Hereinafter, the probe pin PA of Study Example 1 is referred to as a probe pin PA101.

  The probe pin PA101 of the study example 1 shown in FIG. 12A is a probe pin of the present embodiment shown in FIG. 6 in that the protrusions T1a, T1b, T1c and the grooves Tda, Tdb are not formed in the contact portion PAc101. This is a difference from the contact portion PAc1 of PA1. The other configuration of the probe pin PA101 of the examination example 1 is the same as the configuration of the probe pin PA1 of the present embodiment, and thus the description thereof will not be repeated.

  Here, based on FIG. 12 (b) and FIG. 12 (c), the problem found by the inventor of the study example 1 will be described.

  As shown in FIG. 12B, consider the case where the probe pin PA101 of Study Example 1 is brought into contact with the external terminal LD of the semiconductor device SD1. Here, as described above, in the Kelvin contact method, a test is performed by bringing a pair of probe pins PAa and PAb into contact with one external terminal LD. Therefore, in order to ensure that both the probe pin PAa and the probe pin PAb contact the external terminal LD, the pair of probe pins PAa and PAb are arranged in the long side direction of the external terminal LD. Further, as shown in FIGS. 12 (b) and 12 (c), the contact portion PAc101 has a center in the long side direction of the external terminal LD such that the contact portion PAc101 of the probe pin PA101 reliably contacts the external terminal LD. And it is desirable to contact the center in the short side direction (short side direction, width direction).

  Here, with the center in the short side direction of the external terminal LD as the position LDo, the contact portion PAc101 in contact with the short side direction center LDo is indicated by a broken line. At this time, although the contact portion PAc101 of the probe pin PA101 of the study example 1 has an elliptical inclined surface Tf1, no protrusion is formed, so the contact portion PAc101 is shown in FIGS. 12 (b) and 12 (c). Thus, the contact point to the external terminal LD is one point for one probe pin PA.

  Here, an error may occur in the contact position of the contact portion PAc101 due to the dimensional tolerance of the external terminal LD, the rattling of the probe pin PA101, or the positioning clearance when setting the semiconductor device SD1 in the test apparatus. Therefore, for example, there is a possibility that the contact portion PAc101 of the probe pin PA101 contacts the position LDx moved by the shift ΔX from the short side direction center LDo of the external terminal LD. When the deviation ΔX becomes larger than the half length of the width d4 of the external terminal LD, the position LDx is outside the end LDt of the external terminal LD.

  Under the present circumstances, since the contact point of contact part PAc101 of probe pin PA101 of examination example 1 is one point, thickness t1 of the part which external terminal LD exposes from sealed part MR is 0 micrometer, ie, an external terminal When the LD and the sealing portion MR are flush with each other, the contact portion PAc101 can not contact the external terminal LD regardless of the size of the diameter D0 of the contact portion PAc101.

  If the thickness t1 of the portion of the external terminal LD exposed from the sealing portion MR is larger than 0 μm, a part of the inclined surface Tf1 of the contact portion PAc101 may come into contact, but a stable contact is maintained. Things are difficult. In addition, a sealing portion MR is formed at a position LDx outside the end of the external terminal LD. Therefore, when the contact portion PAc101 of the probe pin PA101 comes in contact with the sealing portion MR, the sealing portion MR is damaged to cause an appearance abnormality of the semiconductor device SD1.

  As described above, in the probe pin PA101 of the study example 1, when an error occurs in the contact position of the contact portion PAc101 with the external terminal LD, the contact portion PAc101 can not be in contact with the external terminal LD. Therefore, even if an error occurs in the contact position of the contact portion PAc 101 with the external terminal LD, a probe pin that can reliably contact the external terminal LD is desired.

<Examination example 2>
13 (a) is an enlarged perspective view showing a contact portion of a probe pin PA of Study Example 2, and FIG. 13 (b) is an enlarged side view showing a contact portion of Probe Pin PA of Study Example 2. FIG. 13C is a side view seen from the short side direction of the external terminal LD when the probe pin PA of the study example 2 is brought into contact with the external terminal LD. Hereinafter, the probe pin PA of Study Example 2 is referred to as a probe pin PA102.

  In the probe pin PA102 of the study example 2 shown in FIG. 13A, the protrusions T102a, T102b, T102c and the grooves Td102a, Td102b are formed in the contact portion PAc102. However, the height positions of the protrusions T102a, T102b, and T102c in the extending direction of the contact portions PAc102 are different. That is, the height h3 of the protrusions T102a and T102b from the bottom of the grooves Td102a and Td102b is different from the height h4 of the protrusion T102c from the bottom of the grooves Td102a and Td102b. This point is a difference from the contact portion PAc1 of the probe pin PA1 of the present embodiment shown in FIG. The other configuration of the probe pin PA102 of the examination example 2 is the same as the configuration of the probe pin PA1 of the present embodiment, and thus the description thereof will not be repeated.

  Here, the manufacturing method of probe pin PA102 of examination example 2 is demonstrated. As described above, in the method of manufacturing the probe pin PA1 of the present embodiment shown in FIGS. 10A and 10B, the grooves Tda and Tdb are formed after the horizontal surface Tf3 is formed. On the other hand, as shown in FIG. 13B, in the method of manufacturing the probe pin PA102 of the study example 2, the formation of the trenches Td102a and Td102b in the contact portion PAc102 without forming the horizontal surface Tf3 is the main point. This is a difference from the embodiment.

  As a result, in the study example 2, the height h3 of the protrusions T102a and T102b from the bottom of the grooves Td102a and Td102b is different from the height h4 of the protrusion T102c from the bottom of the grooves Td102a and Td102b (height difference Let Δh be). That is, the probe pin PA102 in the study example 2 has a distance (height) from the connecting surface Tf2 between the protrusions T102a and T102b from the connecting surface Tf2 of the body portion PAt1 and the contact portion PAc102, a body portion PAt1 of the protrusion T102c, and the contact portion PAc102 Is different from the distance (height) from the connection surface Tf2. And the protrusion T102c of the study example 2 is formed in the shape of a triangular pyramid like the protrusions T102a and T102b.

  Here, based on FIG. 13 (b) and FIG. 13 (c), the problem found by the inventor of the study example 2 will be described.

  As shown in FIG. 13C, consider the case where the probe pin PA102 of Study Example 2 is brought into contact with the external terminal LD of the semiconductor device SD1. Here, as described above, when the pair of probe pins PAa and PAb are arranged side by side in the long side direction of the external terminal LD, the contact portion PAc102 in contact with the short side direction center LDo of the external terminal LD is It is represented by a broken line.

  In the probe pin PA102 of Study Example 2, protrusions T102a, T102b, and T102c are formed in the contact portion PAc102. Therefore, the number of contacts to the external terminal LD is three for one probe pin PA. Therefore, in the study example 2, multipoint contact can be made with respect to the external terminal LD, which is advantageous over the study example 1 in that stable contact with the external terminal LD can be secured.

  Further, as described above, an error may occur in the contact position of the contact portion PAc 102. Therefore, for example, there is a possibility that the contact portion PAc102 of the probe pin PA102 contacts the position LDx moved by the shift ΔX from the center LDo in the short side direction of the external terminal LD. As described above, when the deviation ΔX becomes larger than a half length of the width d4 of the external terminal LD, the position LDx is outside the end LDt of the external terminal LD. However, if the distance between the protrusion T102b and the protrusion T102c formed in the contact portion PAc102 of the probe pin PA102 in the study example 2 is larger than the distance between the short side direction end LDt of the external terminal LD and the position LDx, the external terminal The protrusion T102b can be in contact with the LD. Therefore, in Study Example 2, even when an error occurs in the contact position of the probe pin PA with the external terminal LD, the probe pin PA can reliably contact the external terminal LD, as compared to Study Example 1 It is advantageous.

  Suppose that only the protrusions T102a and T102b are formed in the contact portion PAc102, and there are only two points of contact with the external terminal LD per one probe pin PA. In this case, the distance between the protrusion T102a and the protrusion T102b must be smaller than the distance between three protrusions T102a, T102b, and T102c in order to obtain a stable contact with the external terminal LD. As a result, the allowable value of the deviation ΔX of the probe pin PA from the center LDo in the short side direction of the external terminal LD becomes small. When the probe pin PA deviates from the center LDo in the short side direction of the external terminal LD, only one of the protrusions T102a and T102b can contact the external terminal LD, and there is a high possibility of one-point contact. Therefore, it is preferable that protrusions T102a, T102b, and T102c are formed in the contact portion PAc102 as in the probe pin PA102 of the study example 2, and that the contact point to the external terminal LD is three points for one probe pin PA.

  However, another problem occurs in the probe pin PA102 of Study Example 2. In Study Example 2, the height of the protrusions T102c from the bottom of the grooves Td102a and Td102b is higher than that of the protrusions T102a and T102b by Δh. That is, the probe pin PA102 in the study example 2 has a distance (height) from the connecting surface Tf2 between the protrusions T102a and T102b from the connecting surface Tf2 of the body portion PAt1 and the contact portion PAc102, a body portion PAt1 of the protrusion T102c, and the contact portion PAc102 Is different from the distance (height) from the connection surface Tf2. Therefore, when the thickness t1 of the portion exposed from the sealing portion MR of the external terminal LD is smaller than the height difference Δh, the projection T102c is sealed at the position LDx before the projection T102b contacts the external terminal LD. The protrusion T102b can not be in contact with the external terminal LD. Then, if it is attempted to bring the protrusion T102b into contact with the external terminal LD in this state, the protrusion T102c bites into the sealing portion MR, and damages the sealing portion MR.

  Further, since the protrusion T102c is closest to the center of the contact portion PAc102 among the protrusions T102a, T102b, and T102c, the probability that the protrusion T102c contacts the external terminal LD is the highest. Furthermore, since the height of the protrusions T102c and Td102b from the bottom of the grooves Td102a and Td102b is higher than that of the protrusions T102a and T102b by Δh, only the protrusion T102c sticks into the external terminal LD depending on the contact load, and the protrusions T102a, There is also a possibility that T102b does not contact the external terminal LD. The protrusion T102c is formed in the same triangular pyramid shape as the protrusions T102a and T102b. Therefore, among the protrusions T102a, T102b, and T102c, the protrusion T102c is the easiest to wear. As a result, there is a possibility that the protrusions T102a and T102b do not contact the external terminal LD, and only the worn protrusion T102c contacts the external terminal LD. In this case, there arises a problem that a stable contact can not be obtained with respect to the external terminal LD.

  From the above, in the probe pin PA102 of Study Example 2, not only the problem of the probe pin PA101 of Study Example 1 can not be solved, but also a new problem has occurred.

<Examination example 3>
FIG. 14A is a plan view showing the arrangement of the probe pins PAa and PAb with respect to the external terminal LD in the electrical characteristic test of the semiconductor device SD1 of Study Example 3. As shown in FIG. FIG. 14B is a partially enlarged plan view showing the D1 portion of FIG. 14A in an enlarged manner. FIG. 14C is a partially enlarged plan view showing a portion F2 of FIG. 14A in an enlarged manner.

  As described above, the external terminals LD for connection to a circuit to be measured which is subjected to the electrical property test by applying the Kelvin contact method are D1 part, D2 part, E1 part to E6 part and F1 part in FIG. It is included in each of the part to F3 part. Here, the probe pins PAa and PAb of the study example 3 are disposed along the long side direction of the external terminal LD included in the D1 part, the D2 part, the E1 part to the E6 part and the F1 part to the F3 part, respectively. There is. The arrangement of the probe pins PAa and PAb with respect to the external terminal LD is P101. That is, the point which is not arranged to be rotated in the direction of the long side of the external terminal LD is the difference from the arrangement of the probe pins PAa and PAb of the present embodiment shown in FIG. The configuration other than the arrangement of the probe pins PAa and PAb in the examination example 3 is the same as the configuration of the probe pin PA1 in the present embodiment, and therefore the description thereof will not be repeated.

  Here, based on FIG. 14 (a) to FIG. 14 (c), the problem found by the inventor of the study example 3 will be described.

  As shown in FIG. 14A, the plurality of external terminals LD included in the semiconductor device SD1 of the present embodiment are arranged in two rows along the periphery of the die pad DP in a plan view. Assuming that the external terminal LD2 located at the center of the side portion of the semiconductor device SD1 (die pad DP) in the D1 portion is a reference LD2d0 as shown in FIGS. 14A and 14B, this external terminal LD2d0 is The external terminals LD2 are disposed between the adjacent external terminals LD1 in the direction in which the external terminals LD2 are adjacent to each other. Then, as described above, the distance d2 between the external terminals LD2 adjacent to each other is larger than the distance d1 between the external terminals LD1 adjacent to each other in the semiconductor device SD1. Therefore, the distance between the external terminal LD1 and the external terminal LD2 in the direction in which the external terminals LD1 (the external terminals LD2) are adjacent to each other narrows from the center to the end of the side portion of the semiconductor device SD1 (die pad DP). Go. Among the intervals between the external terminal LD1 and the external terminal LD2 in the direction in which the external terminals LD1 (the external terminals LD2) are adjacent to each other, the narrowest interval is represented by Δd.

  Temporarily, the sum of the distance d7 between the probe pin PAa and the probe pin PAb and the diameter D0 of the plunger portion PAp1 of the probe pin PA is the center of the external terminal LD1 and the external terminal LD2 in the direction in which the external terminal LD1 and the external terminal LD2 are adjacent. Is smaller than the distance d6 to the center of In this case, in the direction in which the external terminal LD1 and the external terminal LD2 are adjacent to each other, the probe pins PAa and PAb are brought into contact with the external terminal LD1 even when the center of the external terminal LD1 and the center of the external terminal LD2 are on the same straight line. It does not interfere with the probe pins PAa and PAb brought into contact with the terminal LD2. However, in the present embodiment, the sum of the distance d7 between the probe pin PAa and the probe pin PAb and the diameter D0 of the plunger portion PAp1 of the probe pin PA is the external in the direction in which the external terminal LD1 and the external terminal LD2 are adjacent The distance d6 is larger than the distance d6 between the center of the terminal LD1 and the center of the external terminal LD2. Therefore, there is a possibility that the probe pins PAa and PAb brought into contact with the external terminal LD1 interfere with the probe pins PAa and PAb brought into contact with the external terminal LD2. In particular, as described above, the distance between the external terminal LD1 and the external terminal LD2 in the direction in which the external terminals LD1 (external terminals LD2) are adjacent to each other is from the center to the end of the side portion of the semiconductor device SD1 (die pad DP). It becomes narrower as you head. Therefore, there is a possibility that the probe pins PAa and PAb brought into contact with the external terminal LD1 from the center to the end of the side of the semiconductor device SD1 (die pad DP) and the probe pins PAa and PAb brought into contact with the external terminal LD2 interfere with each other. It gets higher.

  In the present embodiment, for example, the diameter D0 of the plunger portion PAp1 of the probe pin PA is 0.19 mm, and in plan view, the center of the external terminal LD1 and the external terminal LD2 in the direction in which the external terminal LD1 and the external terminal LD2 are adjacent. A case is considered where the distance d6 to the center is 0.55 mm, and the distance d7 between the axial center of the probe pin PAa and the axial center of the probe pin PAb is 0.35 mm in plan view. At this time, as shown in FIG. 14B, based on the external terminal LD2d0 located at the center of the side of the semiconductor device SD1 (die pad DP), a probe to be brought into contact with the external terminal LD2d1 adjacent to the external terminal LD2d0 The pin PAa and the probe pin PAb brought into contact with the external terminal LD1d2 closest to the external terminal LD2d1 interfere with each other.

  Here, in the Kelvin contact method, if the diameter D0 of the plunger portion PAp1 of the probe pin PA is made smaller, the distance d7 between the probe pin PAa and the probe pin PAb to be in contact with the external terminal LD becomes smaller and the probe pins PAa, PAb The possibility of interference with other probe pins PAa and PAb can be reduced. On the other hand, when the diameter D0 of the plunger portion PAp1 of the probe pin PA is reduced, the diameter of the spring PAs provided on the probe pin PA is also reduced. Therefore, the contact load of the probe pin PA on the external terminal LD can not be increased. If the contact load is too small, the contact portions PAc1 of the probe pins PAa and PAb may not bite into the external terminal LD, and the contactability may be reduced.

  Specifically, when the distance d7 between the probe pin PAa and the probe pin PAb is 0.35 mm, the diameter D0 of the plunger portion PAp1 is 0.19 mm, and the contact load of the probe pin PA on the external terminal LD is 35 gf is there. On the other hand, when the distance d7 between the probe pin PAa and the probe pin PAb is 0.30 mm, the diameter D0 of the plunger portion PAp1 is 0.14 mm, and the contact load of the probe pin PA on the external terminal LD is 25 gf. According to the study of the inventor, it is found that the life of the probe pin PA becomes extremely short if the contact load on the external terminal LD is further increased if the diameter D0 of the plunger portion PAp1 is 0.14 mm. There is.

  From the above, in Study Example 3, it is desirable to reduce the possibility of interference between the probe pins PAa and PAb brought into contact with the external terminals LD1 and LD2 without reducing the contact load on the external terminals LD.

  Further, as shown in FIG. 14C, in the F2 portion, the probe pins PAa and PAb are arranged along the long side direction of the external terminal LD2af with respect to the external terminal LD2af. Here, since the external terminal LD2af is C-chamfered, when the contact position of the probe pins PAa and PAb deviates from the center of the external terminal LD2af in the short side direction (see the first example of examination shown in FIG. 12C). The probe pin PAb may be located at the C-chamfered portion of the external terminal LD2af. In this case, there is a possibility that the probe pin PAb can not stably contact the external terminal LD2af, or the probe pin PAb can not contact the external terminal LD2af in the first place.

[About main features and effects of the present embodiment]
Hereinafter, main features and effects of the present embodiment will be described. FIG. 15 illustrates the probe pin PA1 of the present embodiment, the probe pin PA102 of Study Example 2 and the probe pin PA101 of Study Example 1 respectively from the short side direction of the external terminal LD when in contact with the external terminal LD. It is the side view seen.

  One of the main features of the present embodiment is that, as shown in FIGS. 9A to 9D, the plunger portion PAp1 of the probe pin PA1 is formed in a cylindrical shape having a diameter D0, and the plunger portion PAp1 is formed. The contact portion PAc1 has an elliptical inclined surface Tf1. Further, protrusions T1a, T1b, and T1c are formed at the tip of the contact portion PAc1. The protrusions T1a and T1b are formed in a triangular pyramid shape, while the protrusions T1c are formed in a rectangular shape (or a linear shape) in plan view. Further, the height positions of the protrusions T1a, T1b, T1c in the extending direction of the contact portion PAc1 are the same. That is, the heights h1 of the protrusions T1a, T1b, and T1c from the connection surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc1 are the same.

  In this embodiment, by adopting such a configuration, the reliability of the semiconductor device can be improved. The reason will be specifically described below.

  As shown in FIG. 15, consider the case where the probe pin PA1 of the present embodiment is brought into contact with the external terminal LD of the semiconductor device SD1. Here, as described above, when the pair of probe pins PAa and PAb are arranged side by side in the long side direction of the external terminal LD, the contact portion PAc1 in contact with the short side direction center LDo of the external terminal LD is It is represented by a broken line.

  Here, as described above, an error occurs in the contact position of the contact portion PAc1, and the contact portion PAc1 of the probe pin PA1 contacts the position LDx moved by the shift ΔX from the center LDo in the short side direction of the external terminal LD. Think. When the deviation ΔX becomes larger than the half length of the width d4 of the external terminal LD, the position LDx is outside the end LDt of the external terminal LD. However, if the distance between the protrusion T1b and the protrusion T1c formed in the contact portion PAc1 of the probe pin PA1 of the present embodiment is larger than the distance between the short side direction end LDt of the external terminal LD and the position LDx The protrusion T1b can be brought into contact with the terminal LD.

  And since heights h1 of the projections T1a, T1b and T1c from the connection surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc1 are the same, the portions of the external terminal LD exposed from the sealing portion MR Regardless of the thickness t1, the protrusion T1b can be brought into contact with the external terminal LD without the protrusion T1c coming into contact with the sealing portion MR at the position LDx. Then, it is possible to prevent the protrusion T1c from biting into the sealing portion MR and damaging the sealing portion MR.

  Further, as described above, since the protrusion T1c is located at the center of the protrusions T1a, T1b, and T1c, the probability of contacting the external terminal LD is the highest. In this regard, since the protrusion T1c of the present embodiment is formed in a rectangular shape (or linear shape), the wear of the protrusion T1c can be prevented. Further, since the height h1 of the projections T1a, T1b, T1c from the connecting surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc1 is the same, only one of the projections T1a, T1b, T1c Can be prevented from wearing excessively.

  And since the protrusions T1a and T1b are formed in a triangular pyramid shape, they ensure ease of penetration into the external terminal LD, reduce the contact resistance between the probe pins PAa and PAb and the external terminal LD, and achieve stability. Electrical property tests can be performed.

  In the contact portion PAc1 of the probe pin PA1 of the present embodiment, three protrusions T1a, T1b, and T1c are formed. Here, when the number of protrusions is increased, the possibility of contacting the external terminal LD is increased. However, as the contacts increase, the load per contact decreases. Therefore, the possibility that the contact portion PAc1 of the probe pin PA1 bites into the external terminal LD reliably is reduced. Therefore, from the viewpoint of securing the number of contacts and the viewpoint of securing the load per protrusion, the number of protrusions is preferably three.

  From the viewpoint of obtaining stable contact with the external terminal LD, it is preferable that the protrusion T1c be formed in a linear shape in a plan view because the external terminal LD is easily pierced. On the other hand, from the viewpoint of securing the wear resistance of the protrusion T1c, it is preferable that the protrusion T1c be formed in a rectangular shape in plan view, since the surface can be in contact with the external terminal LD.

  Further, in the four-peak (nine-peak) crown generally used as the shape of the contact portion of the probe pin, a protrusion is formed so that the radial direction center of the probe pin is the tip of the contact portion. When the Kelvin contact method is applied using such a probe pin, the distance between the protrusions of the pair of probe pins becomes approximately equal to the diameter of the probe pin. Therefore, unless the diameter of the probe pin is reduced, the distance between the protrusions of the pair of probe pins (the contact points with the external terminals LD) can not be reduced.

  On the other hand, as shown in FIG. 9A, the plunger portion PAp1 of the probe pin PA1 of the present embodiment is formed in a cylindrical shape having a diameter D0, and the contact portion PAc1 of the plunger portion PAp1 has an elliptical inclined surface Tf1. have. The protrusions T1a, T1b, and T1c are formed at the tip of the inclined surface Tf1. Therefore, protrusions T1a, T1b, and T1c are formed at the radial direction end of the probe pin PA1. By doing this, the protrusions T1a, T1b and T1c of the pair of probe pins PAa and PAb are arranged to be close to each other, and the distance between the protrusions of the pair of probe pins PAa and PAb (contact points to the external terminals LD) is set. It can be made smaller.

  In addition, the following points can be mentioned as main features of the present embodiment. As shown in FIG. 7, the plurality of external terminals LD included in the semiconductor device SD1 of the present embodiment are arranged in two rows of the external terminals LD1 and the external terminals LD2 along the periphery of the die pad DP in plan view. There is. Among them, as shown in FIG. 7 and FIG. 8A, a probe pin PAa is brought into contact with the external terminal LD1d at the D1 portion where the external terminal LD1 and the external terminal LD2 to which the Kelvin contact method is applied are disposed adjacent to each other. , PAb are arranged to rotate in the direction of the long side of the external terminal LD1d. In the D1 portion, the probe pins PAa and PAb to be in contact with the external terminal LD2d are arranged to rotate in the long side direction of the external terminal LD2d. Assuming that the arrangement of probe pins PAa and PAb with respect to external terminal LD1d is P1 and the arrangement of probe pins PAa and PAb with respect to external terminal LD2d is P2 in part D1, arrangement P1 and arrangement P2 rotate in different directions. There is.

  In addition, as shown in FIG. 7, the D2 portion including the external terminal LD2d having the smallest distance between the external terminal LD1 closest to the external terminal LD2d and the distance between the other external terminal LD2 and the external terminal LD1. In the above, the probe pins PAa and PAb brought into contact with the external terminal LD2d are arranged to rotate in the direction of the long side of the external terminal LD2d.

  Further, as shown in FIG. 7 and FIG. 8C, probe pins PAa and PAb to be brought into contact with the external terminal LD in portions F1 to F3 including the C-chamfered external terminal LD are the external terminals LD. It is rotating so as to be parallel to the direction in which C chamfering is performed.

  Further, as shown in FIGS. 7 and 8B, the external terminals LD1 to which the Kelvin contact method is applied and the external terminals LD2 to which the Kelvin contact method is applied are not adjacent to the external terminals LD1. The probe pins PAa and PAb to be in contact with the LD are disposed along the long side direction of the external terminal LD.

  In this embodiment, by adopting such a configuration, the reliability of the semiconductor device can be improved. The reason will be specifically described below.

  Arrangement D1 of probe pins PAa and PAb with respect to external terminal LD1 d and arrangement P2 of probe pins PAa and PAb with respect to external terminal LD2 in the D1 portion where the external terminal LD1 and external terminal LD2 to which the Kelvin contact method is applied are arranged adjacent to each other. And are rotated in mutually different directions. In this way, the probe pins PA and external pins LD1 contact the external terminals LD1 while maintaining the spaces between the probe pins PA contacting the external terminals LD1 adjacent to each other and the probe pins PA contacting the external terminals LD2 adjacent to each other A space from the probe pin PA to be in contact with the terminal LD2 can be made.

  In addition, the external terminal LD2d includes the external terminal LD2d in which the distance between the external terminal LD1 closest to the external terminal LD2d and the external terminal LD2d is the smallest compared to the distance between the external terminal LD2 and the external terminal LD1. The probe pins PAa and PAb to be contacted are rotated in the long side direction of the external terminal LD2d. By doing this, it is possible to make a space between the probe pin PA in contact with the external terminal LD2d and the probe pin PA in contact with the external terminal LD1 adjacent to the external terminal LD2d.

  In addition, in the F1 to F3 portions including the C-chamfered external terminal LD, the probe pins PAa and PAb to be brought into contact with the external terminal LD are parallel to the C-chamfered direction of the external terminal LD. Rotate. By doing this, even when the contact position of the probe pins PAa and PAb deviates from the center of the short side direction of the external terminal LD1af, the external pin LD1af does not contact the probe pin PAb with the C chamfered portion of the external terminal LD1af. Stable contact can be obtained.

  Further, in E1 to E6 where the external terminal LD1 to which the Kelvin contact method is applied and the external terminal LD2 to which the Kelvin contact method is not adjacent are the probe pins PAa and PAb to be in contact with the external terminal LD Arrange along the long side direction of the LD. The external terminal LD is rectangular in plan view, and has rounded corners. Therefore, for example, as shown in FIG. 8B, when the probe pins PAa and PAb are arranged in the arrangement P102 rotated in the direction of the long side of the external terminal LD1e, the probe pins PAa and PAb are not connected to the external terminal LD1e. The possibility of the probe pins PAa and PAb coming into contact with the external terminal LD1e is reduced, as compared with the case where they are arranged along the long side direction. Therefore, in portions E1 to E6 where the probe pin PA is not in contact with the adjacent other external terminal LD, the probe pins PAa and PAb are arranged along the long side direction of the external terminal LD1e to probe the external terminal LD The probability that the pin PA contacts can be increased.

  From the above, in the present embodiment, in the electrical property test applying the Kelvin contact method, interference between the probe pins PA is prevented by changing the arrangement of the probe pins PA for each external terminal LD. By doing this, it is not necessary to reduce the diameter of the probe pin PA in order to prevent interference between the probe pins PA. Therefore, the contact load on the external terminal LD can be secured, and stable contact of the probe pin PA to the external terminal LD can be obtained. As a result, the reliability of the semiconductor device can be improved.

[Modification]
<Modification 1>
The probe pin PA2 of the modified example 1 will be described using FIGS. 16 (a) to 16 (d). 16 (a) is an enlarged plan view showing the contact portion of the probe pin PA2 of the first modification, and FIG. 16 (b) is an enlarged view of the contact portion of the probe pin PA2 shown in FIG. 16 (a). FIG. 16C is an enlarged side view showing a contact portion of the probe pin PA2 shown in FIG. 16A. 16D is a partially enlarged plan view showing a state in which the contact portion PAc2 of the probe pin PA2 shown in FIG. 16A is in contact with the external terminal LD in the F2 portion of FIG.

  As shown in FIG. 16A, a protrusion (second protrusion) T2a, a protrusion (third protrusion) T2b, and a protrusion (first protrusion) T2c are formed in the contact portion PAc2 of the probe pin PA2 of the modification 1 ing. The protrusions T2a and T2b are formed in a triangular pyramid shape, and the protrusions T2c are formed in a rectangular shape (or linear shape) in plan view, as in the probe pin PA1 of the above embodiment.

  On the other hand, the difference between the modified example 1 and the above embodiment is that the protrusion T2c is located on a straight line connecting the protrusions T2a and T2b in plan view. The other configuration of the probe pin PA2 of the modified example 1 is the same as the configuration of the probe pin PA1 of the above-described embodiment, and thus the description thereof will not be repeated.

  In the first modification, as in the above embodiment, the height positions of the protrusions T2a, T2b, and T2c in the extending direction of the contact portion PAc2 are the same. That is, the heights h1 of the protrusions T2a, T2b, T2c from the connecting surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc2 are the same. Therefore, even when the contact portion PAc2 of the probe pin PA2 contacts the position LDx moved by the shift ΔX from the short side direction center LDo of the external terminal LD, the protrusion T2c does not contact the sealing portion MR at the position LDx. The protrusion T2b can be in contact with the external terminal LD. Then, it is possible to prevent the protrusion T2c from biting into the sealing portion MR and damaging the sealing portion MR.

  Further, as described above, since the protrusion T2c is positioned at the center among the protrusions T2a, T2b, and T2c, the probability of contacting the external terminal LD is the highest. In this respect, since the protrusion T2c of the first modification is formed in a rectangular shape (or linear shape) in a plan view, the wear of the protrusion T2c can be prevented. Further, since the height h1 of the projections T2a, T2b, T2c from the connecting surface Tf2 between the main part PAt1 of the plunger part PAp1 and the contact part PAc2 is the same, only one of the projections T2a, T2b, T2c Can be prevented from wearing excessively.

  And since the protrusions T2a and T2b are formed in a triangular pyramid shape, they ensure ease of penetration into the external terminal LD, reduce the contact resistance between the probe pins PAa and PAb and the external terminal LD, and achieve stability. Electrical property tests can be performed.

  In the first modification, the protrusions T2c are both located on a straight line connecting the protrusions T2a and T2b. Here, as described above, when the pair of probe pins PAa and PAb are arranged side by side in the long side direction of the external terminal LD, the short side direction of the external terminal LD and the length direction of the protrusion T2c are parallel to each other. become. Therefore, even when the contact portion PAc2 of the probe pin PA2 is displaced from the center LDo in the short side direction of the external terminal LD, the probability that the protrusion T2c contacts the external terminal LD is high. In this respect, the probe pin PA2 of the modification 1 is advantageous over the probe pin PA1 of the above embodiment.

  The protrusions T2a and T2b of the first modification are each formed at a distance L4 from the protrusion T2c. A groove Td2a is formed between the protrusion T2a and the protrusion T2c, and a V-shaped groove Td2b is formed between the protrusion T2b and the protrusion T2c. The protrusion T2c is formed in a rectangular shape having a width L3 and a length w2 in plan view. That is, the projection T2c is chamfered, and the chamfered portion is formed in a rectangular shape. The width L3 of the protrusion T2c may be 0. In this case, the protrusion T2c is formed in a linear shape having a length w2 in a plan view. That is, at this time, the tip of the protrusion T2c is sharp. Further, the heights h2 of the protrusions T2a, T2b, T2c from the bottom of the grooves Td2a, Td2b are the same. The distance L4 between the protrusion T2a (the protrusion T2b) and the protrusion T2c is, for example, 40 to 45 μm. The length w2 of the protrusion T2c is, for example, about 10 to 20 μm, and the width L3 of the protrusion T2c is, for example, 0 to 10 μm.

  Next, as shown in FIG. 16D, when the probe pin PA2 (PAa, PAb) of the modification 1 is brought into contact with the external terminal LD2bf included in the F2 portion with the arrangement P5, the protrusions T2a, T2b, T2c bites into the external terminal LD2bf to form probe marks M2a, M2b, and M2c.

  The protrusions T2a and T2b are formed in a triangular pyramid shape, while the protrusions T2c are formed in a rectangular shape (or linear shape) in a plan view. Therefore, probe marks M2a, M2b, and M2c corresponding to the shapes of the protrusions T2a, T2b, and T2c are respectively formed. In particular, the contact area of the protrusion T2c with the external terminal LD is larger than the contact area of the protrusions T2a and T2b with the external terminal LD.

  Then, in plan view, the protrusion T2c is located on a straight line connecting the protrusion T2a and the protrusion T2b. Therefore, the probe mark M2c is formed on a straight line connecting the probe marks M2a and M2b.

  Further, in a plan view, the protrusions T2a and T2b are located on the outer peripheral edge of the contact portion PAc2. Therefore, the probe marks M2a and M2b are formed on a circular arc drawn by the outer peripheral edge of the contact portion PAc2.

  Further, the arrangement P5 of the pair of probe pins PAa and PAb is rotated so as to be parallel to the C-chamfered direction of the external terminal LD2bf. Therefore, the long side direction of the protrusion T2c of the probe pin PAa and the long side direction of the protrusion T2c of the probe pin PAb are orthogonal to the C-chamfered direction of the external terminal LD2bf.

  Further, the distances (heights) of the protrusions T2a, T2b and T2c from the connecting surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc2 are the same. Therefore, the depths from the surface of the external terminal LD2bf at the bottoms of the probe marks M2a, M2b, and M2c are the same.

<Modification 2>
The probe pin PA3 of the modification 2 will be described with reference to FIGS. 17 (a) to 17 (d). FIG. 17 (a) is an enlarged plan view showing the contact portion of the probe pin PA3 of the second modification, and FIG. 17 (b) is an enlarged view showing the contact portion of the probe pin PA3 shown in FIG. 17 (a). FIG. 17C is a side view showing an enlarged contact portion of the probe pin PA3 shown in FIG. 17A. FIG. 17D is a partially enlarged plan view showing a state in which the contact portion PAc3 of the probe pin PA3 shown in FIG. 17A is in contact with the external terminal LD in the F2 portion of FIG.

  As shown in FIG. 17A, a protrusion (second protrusion) T3a, a protrusion (third protrusion) T3b, and a protrusion (first protrusion) T3c are formed in the contact portion PAc3 of the probe pin PA3 of the modification 2 ing. The difference between the protrusions T3a and T3b and the probe pin PA1 of the above-described embodiment is that the protrusions T3a and T3b are formed in a rectangular shape (or linear shape) in plan view. And the length of protrusion T3a and T3b is shorter than the length of protrusion T3c. That is, the contact area of the protrusion T3c with respect to the external terminal LD is larger than the contact area of the protrusions T3a and T3b with respect to the external terminal LD. The other configuration of the probe pin PA3 of the modification 2 is the same as the configuration of the probe pin PA1 of the above-described embodiment, and thus the repetitive description will be omitted.

  In the second modification, the height positions of the protrusions T3a, T3b, and T3c in the extending direction of the contact portion PAc3 are the same as in the above embodiment. That is, the height h1 of the projections T3a, T3b, T3c from the connection surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc3 is the same. Therefore, even when the contact portion PAc3 of the probe pin PA3 contacts the position LDx moved by the shift ΔX from the short side direction center LDo of the external terminal LD, the protrusion T3c does not contact the sealing portion MR at the position LDx. The protrusion T3b can be in contact with the external terminal LD. Then, it is possible to prevent the protrusion T3c from biting into the sealing portion MR and damaging the sealing portion MR.

  Further, as described above, since the protrusion T3c is positioned at the center among the protrusions T3a, T3b, and T3c, the probability of contacting the external terminal LD is the highest. In this respect, since the protrusion T3c of the second modification is formed in a rectangular shape (linear shape), the wear of the protrusion T3c can be prevented. Further, since the height h1 of the projections T3a, T3b, T3c from the connecting surface Tf2 between the main part PAt1 of the plunger part PAp1 and the contact part PAc3 is the same, only one of the projections T3a, T3b, T3c Can be prevented from wearing excessively.

  The protrusions T3a and T3b of the second modification are formed in a rectangular shape (or linear shape), and the lengths of the protrusions T3a and T3b are shorter than the length of the protrusion T3c. Therefore, the projections T3a and T3b are more easily inserted into the external terminal LD than the projections T3c, ensuring ease of insertion into the external terminal LD, and reducing the contact resistance between the probe pins PAa and PAb and the external terminal LD. Electrical property test can be performed. Furthermore, since the protrusions T3a and T3b are formed in a rectangular shape (or linear shape), it is possible to prevent the wear of the protrusions T3a and T3b. In this respect, the probe pin PA3 of the modification 2 is advantageous over the probe pin PA1 of the above embodiment.

  On the other hand, the above embodiment in which the protrusions T3a and T3b are formed in a triangular pyramid shape is more advantageous than the modification 2 in terms of the ease of penetration into the external terminal LD.

  Further, from the viewpoint of obtaining stable contact with the external terminal LD, it is preferable that the protrusions T3a and T3b be formed in a linear shape in plan view because the external terminal LD is easily pierced. On the other hand, from the viewpoint of securing the wear resistance of the protrusions T3a and T3b, it is preferable that the protrusions T3a and T3b be formed in a rectangular shape in plan view because the protrusions T3a and T3b can contact the external terminal LD in a plane.

  A groove Td3a is formed between the protrusion T3a and the protrusion T3c in the second modification, and a V-shaped groove Td3b is formed between the protrusion T3b and the protrusion T3c. Further, the heights h2 of the protrusions T3a, T3b, T3c from the bottom of the grooves Td3a, Td3b are the same. The protrusions T3a and T3b are formed in a rectangular shape having a width w3 and a length L5. When the width w3 of the protrusions T3a and T3b is 0, the protrusions T3a and T3b have a length L5 in plan view. It is formed in a linear shape having The length L5 of the protrusions T3a and T3b is, for example, about 0 to 5 μm. When the length L5 of the protrusions T3a and T3b is zero, the protrusions T1a and T1b of the first embodiment are matched.

Second Embodiment
[About Configuration of Semiconductor Device of Second Embodiment]
In the first embodiment, the QFN type semiconductor device SD1 is described as an example of the semiconductor device to be tested, but the package aspect of the semiconductor device to be tested is not limited to this. Therefore, as the second embodiment, as shown in FIG. 18 to FIG. 19, the case where it is applied to a semiconductor device SD2 of QFP (Quad Flat Package) type will be described as an example.

  18 is a transparent plan view showing an outline of the internal structure of the semiconductor device SD2 of the second embodiment, and FIG. 19 is a cross section showing a structure obtained by cutting the semiconductor device SD2 shown in FIG. 18 along line A-A of FIG. FIG. Note that, in FIG. 18, in order to show the planar arrangement inside the semiconductor device SD2, the outline of the outer edge of the sealing portion MR is shown by a two-dot chain line, and the sealing portion MR is shown in a transparent state.

  The semiconductor device SD2 of the second embodiment shown in FIGS. 18 and 19 is a semiconductor package in which the semiconductor chip CP is embedded in the sealing portion (sealing resin) MR. The semiconductor device SD2 includes a semiconductor chip CP, a plurality of wires (conductive members) BW, a plurality of leads (external terminals) LD, and a sealing portion MR.

  The sealing portion MR has a substantially rectangular planar shape having four sides, and on each side, a plurality of leads LD project from the sealing portion MR so as to extend in the direction orthogonal to the side. The semiconductor chip CP is disposed at the central portion of the sealing portion MR.

  The semiconductor chip CP includes a front surface (main surface) CPa, a back surface (main surface) CPb located on the opposite side of the front surface CPa, and a plurality of pad electrodes (chip electrodes, terminals) PD formed on the front surface CPa. Have. Although not shown, a plurality of semiconductor elements such as a transistor or a diode are formed on the surface CPa side of the semiconductor chip CP, and the semiconductor elements are electrically connected to a plurality of pad electrodes PD formed on the surface CPa. There is.

  As shown in FIG. 18, the semiconductor chip CP is mounted (fixed) on a die pad (chip mounting portion) DP supported by a plurality of suspension leads TL via a bonding material BD (see FIG. 19), and the semiconductor chip CP The plurality of pad electrodes PD are electrically connected to the plurality of leads LD, which are external terminals, through the wires BW. The lead LD is made of, for example, copper. The wire BW is made of, for example, gold or copper.

  The semiconductor chip CP and the plurality of wires BW are resin-sealed by the sealing portion MR. The sealing portion MR has an upper surface (surface) MRa, a lower surface (surface) MRb located opposite to the upper surface MRa, and a side surface MRc located between the upper surface MRa and the lower surface MRb, as shown in FIG. . The sealing portion MR is, for example, an insulator obtained by adding a filler material such as silica to a thermosetting resin.

  In addition, a part of each of the leads LD is sealed inside the sealing portion MR, and the others are exposed. The portion located inside the sealing portion MR is distinguished as the inner lead portion IL, and the portion located outside the sealing portion MR as the outer lead portion OL. The outer lead portion OL serves as an external terminal of the semiconductor device SD2. As shown in FIG. 19, the outer lead portion OL has a gull-wing shape. The solder film SF2 is formed on the surface of the outer lead portion OL.

  The solder film SF2 is called an external plating film, and the conductive bonding material is formed when the semiconductor device SD2 is mounted on a mounting substrate by forming the solder film SF2 on the surface of the outer lead portion (external terminal) OL. The wettability of the external terminal to the solder can be improved. The solder film SF2 is made of the above-described lead-free solder, and for example, only tin (Sn), tin-bismuth (Sn-Bi), tin-copper (Sn-Cu), or tin-copper-silver (Sn-Cu-Ag) And so on.

[About the manufacturing process of the semiconductor device of Embodiment 2]
Next, a manufacturing process of the semiconductor device SD2 of the second embodiment will be described. Hereinafter, only differences from the manufacturing process of the semiconductor device SD1 of the first embodiment will be described, and the repeated description will be omitted.

  The manufacturing process of the semiconductor device SD2 of the second embodiment includes: Base material preparation process (S21), 2. Semiconductor chip mounting process (S22), 3. Electrical connection process (S23), 4. Sealing step (S24); Plating step (S25); Lead cutting process (S26), 7. Individualization process (S27), 8. The electrical characteristics test step (S28) is included. Among these steps, the substrate preparation step (S21), the semiconductor chip mounting step (S22), the electrical connection step (S23), the sealing step (S24), and the singulation step (S27) are performed as described above with reference to FIG. In the manufacturing process of the semiconductor device SD1 of mode 1, the base material preparation step (S11), the semiconductor chip mounting step (S12), the electrical connection step (S13), the sealing step (S14), the singulation step (S17) The description is omitted because it is almost the same as in FIG.

  In the plating step (S25), a metal film (plating film) made of solder is formed on the surface of the lead LD shown in FIG. In the second embodiment, for example, the lead LD is immersed in a plating solution, and the metal film (solder plating film) SF2 shown in FIG. 19 is formed on the surface of the lead LD (corresponding to the outer lead portion OL) exposed from the sealing portion MR. Form.

  The solder film SF2 is formed from the viewpoint of improving the wettability of the external terminal to the solder which is a conductive bonding material when mounting on the mounting substrate as described above, but the base material formed of the metal constituting the lead LD As long as the surface of the portion (base portion) is covered with the solder film SF2, the thickness of the solder film SF2 may be thin. In the second embodiment, the thickness of the solder film SF2 is thinner than the outer lead portion OL, and is, for example, about 10 μm to 20 μm. The above is the plating step (S25).

  In the lead cutting step (lead forming step) (S26), the end portion of the outer lead portion OL of the lead frame as a base material on which the semiconductor chip CP is mounted is cut. Although the cutting method in this step is not particularly limited, for example, a punch (cutting blade) is disposed on the lower surface side of the lead frame and a die (supporting jig) is disposed on the upper surface side, and cutting is performed.

  Further, as shown in FIG. 19, in the lead LD of the second embodiment, each of the outer lead portions OL is formed in a gull-wing shape. The method for forming the outer lead portion OL of the lead LD is not particularly limited. For example, it can be formed by pressing using a forming punch and a die. The above is the lead cutting step (S26).

  Hereinafter, the electrical property test step (S28) will be described in detail.

<Electrical Characteristic Testing Process of Second Embodiment>
FIG. 20A is an enlarged sectional view of a main portion of a region where the probe pin of the test apparatus is brought into contact with the semiconductor device SD2 of the second embodiment.

  As shown in FIG. 20A, in the second embodiment, after disposing the semiconductor device SD2 on the socket of the test apparatus, the probe pin PA is moved toward the outer lead portion OL projecting outward from the sealing portion MR. Press down. Also in the second embodiment, in order to apply the Kelvin contact method, two probe pins PAa and PAb are disposed along the longitudinal direction of the outer lead portion OL.

  Thus, the contact portion PAc of the probe pin PA contacts the outer lead portion OL. In particular, in the semiconductor device SD2 of the second embodiment, since the solder film SF2 is formed on the surface of the outer lead portion OL, the contact portion PAc of the probe pin PA contacts the solder film SF2.

  Under the present circumstances, in order to reduce the contact resistance of probe pin PA and outer lead part OL and to perform an electrical property test stably, the contact load of probe pin PA and outer lead part OL is, for example, the second embodiment. 20 gf (about 0.2 N) to about 50 gf (about 0.5 N), and it is preferable that the contact portion PAc of the probe pin PA bite into the solder film SF2 or the outer lead portion OL.

  Then, a predetermined electric signal is transmitted to the semiconductor device SD2 from an external test circuit (not shown), and an electric characteristic test is performed. During the test, the semiconductor device SD2 is energized via the probe pin PA, and the signal current or the like flowing from the semiconductor device SD2 is measured to ensure that there are no disconnections in the circuit or a predetermined (within an allowable range) electricity. Make sure that you have the Moreover, based on the result of the electrical property test, the non-defective product and the defective product are judged, and the defective product is excluded. The sorting of the non-defective product and the non-defective product is performed, for example, by transporting the non-defective product and the non-defective product to different transport destinations when taking out from the socket.

  Here, the probe mark in the second embodiment will be described. 20B shows a state in which the contact portion PAc1 of the probe pin PA1 of the first embodiment is brought into contact with the outer lead portion OL of the semiconductor device SD2 of the second embodiment shown in FIG. 20A. It is an enlarged plan view.

  As shown in FIG. 20B, when the probe pin PA1 (PAa, PAb) of the first embodiment is brought into contact with the outer lead portion OL of the semiconductor device SD2 of the second embodiment, FIGS. The protrusions T1a, T1b, and T1c shown in FIG. 9D bite into the outer lead portion OL to form probe marks M1a, M1b, and M1c. As shown in FIGS. 9A and 9B described above, the protrusions T1a and T1b are formed in a triangular pyramid shape, while the protrusions T1c are formed in a rectangular shape (or a linear shape). . Therefore, probe marks M1a, M1b, and M1c corresponding to the shapes of the protrusions T1a, T1b, and T1c are respectively formed (see FIG. 20B). In particular, the contact area of the protrusion T1c with the outer lead portion OL is larger than the contact area of the protrusions T1a and T1b with the outer lead portion OL.

  Further, in plan view, the center O side of the contact portion PAc1 of the protrusion T1c is located on a straight line connecting the protrusion T1a and the protrusion T1b. Therefore, the center O side end of the contact mark PAc1 of the probe mark M1c is formed on the same straight line as the center O side end of the contact mark PAc1 of the probe marks M1a and M1b.

  In the plan view, the outer peripheral side of the contact portion PAc1 of the protrusion T1c is located on the outer peripheral edge of the contact portion PAc1 together with the protrusions T1a and T1b. Therefore, the outer peripheral side end of the contact mark PAc1 of the probe mark M1c is formed on an arc drawn by the outer peripheral edge of the contact side PAc1 together with the outer peripheral side end of the contact mark PAc1 of the probe marks M1a and M1b.

  The pair of probe pins PAa and PAb are parallel to the longitudinal direction of the outer lead portion OL. Therefore, the long side direction of the protrusion T1c of the probe pin PAa and the long side direction of the protrusion T1c of the probe pin PAb are parallel to the long direction of the outer lead portion OL.

  Further, the distances (heights) of the protrusions T1a, T1b and T1c from the connection surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc1 are the same. Therefore, the depths of the bottoms of the probe marks M1a, M1b, and M1c from the surface of the outer lead portion OL are substantially the same.

  In the second embodiment, as in the first embodiment, the heights of the protrusions T1a, T1b, and T1c in the extending direction of the contact portion PAc1 are the same. That is, the heights h1 of the protrusions T1a, T1b, and T1c from the connection surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc1 are the same. Therefore, stable contact can be obtained even when the contact portion PAc1 of the probe pin PA1 contacts a position shifted from the center of the outer lead portion OL in the short side direction.

  Further, as described above, since the protrusion T1c is positioned at the most center among the protrusions T1a, T1b, and T1c, the probability of contacting the outer lead portion OL is the highest. In this respect, since the protrusion T1c is formed in a rectangular shape (or linear shape) in plan view, it is possible to prevent the wear of the protrusion T1c. Further, since the height h1 of the projections T1a, T1b, T1c from the connecting surface Tf2 between the main body portion PAt1 of the plunger portion PAp1 and the contact portion PAc1 is the same, only one of the projections T1a, T1b, T1c Can be prevented from wearing excessively.

  Then, since the protrusions T1a and T1b are formed in a triangular pyramid shape, ease of penetration into the outer lead portion OL is ensured, and contact resistance between the probe pins PAa and PAb and the outer lead portion OL is reduced. Electrical property tests can be conducted stably.

  Here, the case of using the probe pin PA1 of the first embodiment in the electrical property test step (S28) is described as an example, but the probe pin PA2 of the first modification or the probe pin PA3 of the second modification is adopted. It can also be done.

  As mentioned above, although the invention made by the present inventor was concretely explained based on an embodiment, the present invention is not limited to the above-mentioned embodiment, and can be variously changed in the range which does not deviate from the gist. Needless to say.

  In addition, parts corresponding to the contents described in the embodiment or parts thereof will be described below.

[Supplementary Note 1]
(A) preparing a semiconductor device provided with a semiconductor chip and provided with a plurality of external terminals electrically connected to a semiconductor integrated circuit formed in the semiconductor chip;
(B) performing an electrical property test of the semiconductor integrated circuit after the step (a);
Have
The step (b) includes an electrical property test using a Kelvin contact method in which two probe pins are brought into contact with one external terminal included in the plurality of external terminals,
The plurality of external terminals include a first terminal,
The first terminal is formed in a rectangular shape in plan view,
The method for manufacturing a semiconductor device, wherein, in a plan view, an adjacent direction of two probe pins to be in contact with the first terminal is rotated at a first angle with respect to a first side direction of the first terminal.

[Supplementary Note 2]
In the method of manufacturing a semiconductor device according to appendix 1,
The plurality of external terminals further include a second terminal,
In a plan view, the first terminal and the second terminal are each formed in a rectangular shape having a long side and a short side which intersects the long side and is shorter than the long side,
The first terminal and the second terminal are adjacent to each other in the short side direction of the first terminal and the second terminal,
In plan view, the adjacent direction of the two probe pins to be in contact with the first terminal is rotated at the first angle with respect to the long side direction of the first terminal,
In plan view, the adjacent direction of the two probe pins to be in contact with the second terminal is rotated at a second angle with respect to the long side direction of the second terminal,
A method of manufacturing a semiconductor device, wherein a rotation direction of the first angle and a rotation direction of the second angle are opposite to each other.

[Supplementary Note 3]
In the method of manufacturing a semiconductor device according to appendix 2,
The plurality of external terminals further include a third terminal,
In a plan view, the third terminal is formed in a rectangular shape having a long side and a short side intersecting the long side and shorter than the long side,
The first terminal and the third terminal are adjacent to each other in the long side direction of the first terminal and the third terminal,
The method for manufacturing a semiconductor device, wherein, in a plan view, the adjacent direction of the two probe pins in contact with the third terminal is parallel to the adjacent direction of the two probe pins in contact with the first terminal.

[Supplementary Note 4]
In the method of manufacturing a semiconductor device according to appendix 1,
The plurality of external terminals further include a fourth terminal,
In a plan view, the fourth terminal is formed in a rectangular shape having a long side and a short side intersecting the long side and shorter than the long side,
In plan view, the adjacent directions of the two probe pins to be in contact with the fourth terminal are parallel to the long side direction of the fourth terminal,
The manufacturing method of the semiconductor device in which the said 1st terminal and the said 4th terminal are not mutually adjacent in the short side direction of the said 1st terminal and the said 4th terminal.

[Supplementary Note 5]
In the method of manufacturing a semiconductor device according to appendix 1,
The plurality of external terminals further include a fifth terminal and a sixth terminal,
In plan view, each of the fifth terminal and the sixth terminal is formed in a rectangular shape having a long side and a short side which intersects the long side and is shorter than the long side,
In plan view, the adjacent direction of the two probe pins to be in contact with the fifth terminal is parallel to the long side direction of the fifth terminal,
In plan view, the adjacent direction of the two probe pins in contact with the sixth terminal is parallel to the long side direction of the sixth terminal,
The fifth terminal and the sixth terminal are adjacent to each other in the long side direction of the fifth terminal and the sixth terminal, and not adjacent to each other in the short side direction of the fifth terminal and the sixth terminal. Semiconductor device manufacturing method.

[Supplementary Note 6]
In the method of manufacturing a semiconductor device according to appendix 1,
The plurality of external terminals further include a seventh terminal,
In a plan view, the seventh terminal is formed in a rectangular shape having a long side and a short side intersecting the long side and shorter than the long side,
The seventh terminal has a corner chamfered at a third angle with respect to the long side direction,
The method for manufacturing a semiconductor device, wherein an adjacent direction of two probe pins to be in contact with the seventh terminal is parallel to the corner.

BD bonding material BW wire CP semiconductor chip CPa surface (main surface)
CPb back surface (main surface)
DP Die pad IL Inner lead LD, LD1a, LD1af, LD1b, LD1bf, LD1c, LD1d, LD1d2, LD1e, LD2a, LD2a, LD2af, LD2b, LD2bf, LD2c, LD2d, LD2d0, LD2d1, LD2e, LD2f External terminal LF Lead frame M101 Probe mark M1a, M1b, M1c Probe mark M2a, M2b, M2c Probe mark Ma, Mb Electrode MR Sealing part OL Outer lead part PA, PA1, PA101, PA102, PA2, PA3, PAa, PAb Probe pin PAc, PAc1, PAc101, PAc102, PAc2, PAc3 Contact portion PAp1, PAp2 Plunger portion PAs Spring PAt1 Body portion PD Pad electrode SD1, SD2 Semiconductor device SF2 I's film T102a, T102b, T102c projections T1a, T2a, T3a projection (second projection)
T1b, T2b, T3b protrusion (third protrusion)
T1c, T2c, T3c protrusion (first protrusion)
TB test substrate Td102a, Td102b groove Tda, Td2a, Td3a groove (first groove)
Tdb, Td2b, Td3b Groove (second groove)
Tf1 Slope Tf2 Connection Tf3 Horizontal TG Probe guide TL, TL1 Suspended lead TS Test device

Claims (20)

(A) preparing a semiconductor device having a semiconductor chip and a plurality of external terminals electrically connected to the semiconductor integrated circuit formed on the semiconductor chip;
(B) performing an electrical property test of the semiconductor integrated circuit after the step (a);
Have
The step (b) includes an electrical property test using a Kelvin contact method in which two probe pins are brought into contact with one external terminal included in the plurality of external terminals,
Each of the two probe pins includes a plunger portion including a body portion and a contact portion including a contact region to the external terminal,
The contact portion has a first protrusion, a second protrusion and a third protrusion arranged side by side,
The respective tips of the first protrusion, the second protrusion and the third protrusion have the same height position in the extending direction of the contact portion,
The first protrusion is located between the second protrusion and the third protrusion,
A method of manufacturing a semiconductor device, wherein a contact area of the first protrusion with respect to the external terminal is larger than a contact area of each of the second protrusion and the third protrusion with respect to the external terminal. In the method of manufacturing a semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the first protrusion is formed in a linear shape in a plan view. In the method of manufacturing a semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the first protrusion is formed in a rectangular shape in a plan view. In the method of manufacturing a semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the second protrusion and the third protrusion are formed in a pyramid shape. In the method of manufacturing a semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the second protrusion and the third protrusion are formed in a linear shape in plan view. In the method of manufacturing a semiconductor device according to claim 1,
The method of manufacturing a semiconductor device, wherein the second protrusion and the third protrusion are formed in a rectangular shape in a plan view. In the method of manufacturing a semiconductor device according to claim 1,
The contact portion is formed in a cylindrical shape.
A method of manufacturing a semiconductor device, wherein a straight line connecting the second protrusion and the third protrusion does not pass through an axial center of the contact portion in plan view. In the method of manufacturing a semiconductor device according to claim 7,
The method of manufacturing a semiconductor device, wherein the first protrusion is located on a perpendicular bisector of a line segment connecting the second protrusion and the third protrusion in a plan view. In the method of manufacturing a semiconductor device according to claim 7,
The method of manufacturing a semiconductor device, wherein the first protrusion is located on a straight line passing through the second protrusion and the third protrusion in a plan view. In the method of manufacturing a semiconductor device according to claim 1,
A first groove is formed between the first protrusion and the second protrusion,
A second groove is formed between the first protrusion and the third protrusion,
The manufacturing of a semiconductor device, wherein the height from the bottom of the first groove of the first protrusion and the second protrusion is the same as the height from the bottom of the second groove of the first protrusion and the third protrusion Method. In the method of manufacturing a semiconductor device according to claim 10,
The height of the first protrusion and the second protrusion from the bottom of the first groove is
A method of manufacturing a semiconductor device, wherein the thickness is larger than the thickness of the external terminal exposed from the semiconductor device. In the method of manufacturing a semiconductor device according to claim 1,
The contact portion is formed with an inclined surface inclined with respect to the extending direction in a side view,
The method of manufacturing a semiconductor device, wherein the first protrusion, the second protrusion, and the third protrusion are formed at the tip of the inclined surface. In the method of manufacturing a semiconductor device according to claim 12,
The method for manufacturing a semiconductor device, wherein the two probe pins are arranged such that the first protrusions of the two probe pins are adjacent to each other with respect to the external terminal. In the method of manufacturing a semiconductor device according to claim 1,
The plurality of external terminals include a first terminal,
The first terminal is formed in a rectangular shape in plan view,
The method for manufacturing a semiconductor device, wherein, in a plan view, an adjacent direction of two probe pins to be in contact with the first terminal is rotated at a first angle with respect to a first side direction of the first terminal. In the method of manufacturing a semiconductor device according to claim 14,
The plurality of external terminals further include a second terminal,
In a plan view, the first terminal and the second terminal are each formed in a rectangular shape having a long side and a short side which intersects the long side and is shorter than the long side,
The first terminal and the second terminal are adjacent to each other in the short side direction of the first terminal and the second terminal,
In plan view, the adjacent direction of the two probe pins to be in contact with the first terminal is rotated at the first angle with respect to the long side direction of the first terminal,
In plan view, the adjacent direction of the two probe pins to be in contact with the second terminal is rotated at a second angle with respect to the long side direction of the second terminal,
A method of manufacturing a semiconductor device, wherein a rotation direction of the first angle and a rotation direction of the second angle are opposite to each other. In the method of manufacturing a semiconductor device according to claim 15,
The plurality of external terminals further include a third terminal,
In a plan view, the third terminal is formed in a rectangular shape having a long side and a short side intersecting the long side and shorter than the long side,
The first terminal and the third terminal are adjacent to each other in the long side direction of the first terminal and the third terminal,
The method for manufacturing a semiconductor device, wherein, in a plan view, the adjacent direction of the two probe pins in contact with the third terminal is parallel to the adjacent direction of the two probe pins in contact with the first terminal. In the method of manufacturing a semiconductor device according to claim 14,
The plurality of external terminals further include a fourth terminal,
In a plan view, the fourth terminal is formed in a rectangular shape having a long side and a short side intersecting the long side and shorter than the long side,
In plan view, the adjacent directions of the two probe pins to be in contact with the fourth terminal are parallel to the long side direction of the fourth terminal,
The manufacturing method of the semiconductor device in which the said 1st terminal and the said 4th terminal are not mutually adjacent in the short side direction of the said 1st terminal and the said 4th terminal. In the method of manufacturing a semiconductor device according to claim 14,
The plurality of external terminals further include a fifth terminal and a sixth terminal,
In plan view, each of the fifth terminal and the sixth terminal is formed in a rectangular shape having a long side and a short side which intersects the long side and is shorter than the long side,
In plan view, the adjacent direction of the two probe pins to be in contact with the fifth terminal is parallel to the long side direction of the fifth terminal,
In plan view, the adjacent direction of the two probe pins in contact with the sixth terminal is parallel to the long side direction of the sixth terminal,
The fifth terminal and the sixth terminal are adjacent to each other in the long side direction of the fifth terminal and the sixth terminal, and not adjacent to each other in the short side direction of the fifth terminal and the sixth terminal. Semiconductor device manufacturing method. In the method of manufacturing a semiconductor device according to claim 14,
The plurality of external terminals further include a seventh terminal,
In a plan view, the seventh terminal is formed in a rectangular shape having a long side and a short side intersecting the long side and shorter than the long side,
The seventh terminal has a corner chamfered at a third angle with respect to the long side direction,
The method for manufacturing a semiconductor device, wherein an adjacent direction of two probe pins to be in contact with the seventh terminal is parallel to the corner. In the method of manufacturing a semiconductor device according to claim 1,
The semiconductor device is
The chip mounting unit,
The semiconductor chip mounted on the chip mounting portion;
Have
The plurality of external terminals consist of a plurality of leads,
Each of the plurality of leads is connected to the inner lead portion arranged to surround the periphery of the chip mounting portion, and the outer lead portion, and an outer which extends outward from the inner lead portion It consists of a lead and
The method for manufacturing a semiconductor device, wherein the probe pin is in contact with the outer lead portion.

Images