JP2019078972A - Interference filter, optical filter device, optical module and electronic apparatus - Google Patents

Abstract

To provide an interference filter capable of reducing influences by charging in a dielectric multilayer film, an optical filter device, an optical module and an electronic apparatus.SOLUTION: The interference filter includes a first substrate, a first reflection film disposed over one surface of the first substrate, a second reflection film overlapping the first reflection film in at least a predetermined mirror region in a plan view in a thickness direction of the first substrate and disposed to leave a gap with respect to the first reflection film, and a first wiring electrode disposed on the first reflection film. The first reflection film is a laminate having insulation layers and conductive layers alternately deposited. A first through hole is disposed in a part of the first reflection film, disposed along the direction of stacking the insulation layers and the conductive layers, to expose at least one layer of the conductive layer. The first wiring electrode is connected to the first through hole, and is conductive to the conductive layer exposed from the first through hole.SELECTED DRAWING: Figure 3

Description

  The present invention relates to an interference filter, an optical filter device, an optical module, and an electronic device.

  Conventionally, an interference filter is known in which a pair of mirrors are disposed opposite to each other, and incident light is subjected to multiple interference between the mirrors to emit light of a target wavelength. In such an interference filter, in order to output light of a target wavelength with high resolution, it is preferable to use a mirror having high reflection characteristics with respect to a target wavelength range. As such a mirror, an interference filter using a dielectric multilayer film in which high refractive layers and low refractive layers are alternately stacked is conventionally known (see, for example, Patent Document 1).

The interference filter described in Patent Document 1 has a fixed substrate and a movable substrate disposed opposite to each other, and a fixed reflection film (mirror) formed of a dielectric multilayer film is formed on the entire surface of the fixed substrate facing the movable substrate. A movable reflective film (mirror) formed of a dielectric multilayer film is formed on the entire surface of the movable substrate facing the fixed substrate. In such an interference filter, the dielectric multilayer film is formed as compared with the case where the dielectric multilayer film is formed on part of the surface of the fixed substrate facing the movable substrate or part of the surface of the movable substrate facing the fixed substrate. This eliminates the need for the step of patterning (e.g., lift-off step etc.), and the manufacturing efficiency is improved.
In the case of forming an electrode over the dielectric multilayer film over the substrate after forming the dielectric multilayer film in a partial region of the substrate by a lift-off process or the like, the electrode is formed on the end face (side surface) of the dielectric multilayer film. Is placed. In such a case, formation of the electrode on the end face of the dielectric multilayer film is difficult, and there is a possibility that disconnection may occur in a part of the electrode. On the other hand, in the case of the interference filter as in Patent Document 1, it is sufficient to form the electrode on the surface of the dielectric multilayer film, so that problems such as disconnection of the electrode can be suppressed.

JP, 2015-688860, A

By the way, in the interference filter described in Patent Document 1, drive electrodes are disposed on each of the fixed substrate and the movable substrate to function as an electrostatic actuator. Here, when there is a film layer having conductivity in part as the dielectric multilayer film, there is a problem that charging also occurs in the film layer having conductivity.
For example, when charging occurs in the conductive film layer, charging also occurs in portions other than the drive electrodes that are desired to function as an electrostatic actuator, so that an effect such as apparently expanding the area of the electrostatic actuator occurs. The gap size between the mirrors gradually narrows. In this case, voltage control for setting the gap size between the mirrors to a predetermined size with high precision becomes complicated.

  An object of the present invention is to provide an interference filter, an optical filter device, an optical module, and an electronic device capable of reducing the influence of charging of a dielectric multilayer film.

  The interference filter of one application example according to the present invention includes at least a first substrate, a first reflection film provided over one surface of the first substrate, and at least a plan view of the first substrate viewed from the thickness direction. A second reflection film overlapping the first reflection film in a predetermined mirror region and disposed with a gap to the first reflection film, and a first wiring electrode provided on the first reflection film; And the first reflective film is a laminate in which the insulating layer and the conductive layer are alternately stacked, and is provided in a stacking direction of the insulating layer and the conductive layer on a part of the first reflective film. And at least one layer of a first through hole to which the conductive layer is exposed is provided, and the first wiring electrode is connected to the first through hole and electrically connected to the conductive layer exposed from the first through hole It is characterized by

In this application example, the first reflection is a laminate (dielectric multilayer film) in which a conductive layer and an insulating layer are alternately stacked over one surface of the first substrate, that is, substantially the entire surface of the first substrate. A membrane is provided. In such a configuration, a lift-off process and the like are unnecessary, and the manufacturing efficiency of the interference filter is improved.
On the other hand, in the configuration in which such a first reflective film is provided on substantially the entire surface of the first substrate, for example, when a drive electrode or the like is provided and a voltage is applied, the conductive layer is charged. On the other hand, in this application example, the first reflection film is provided with the first through hole to which the conductive layer is exposed, and the conductive layer exposed from the first through hole is connected to the first wiring electrode There is. Therefore, even when the conductive layer is charged, the charge can be released from the first wiring electrode, and the influence of the charge can be suppressed.

  In the interference filter of the application example, the first through hole is provided in a first through hole provided in the insulating layer and the conductive layer in contact with the first substrate side of the insulating layer, and the first through hole is provided. It is preferable that the second through hole includes the second through hole communicating with the hole, and the second through hole is located inside the first through hole in the plan view.

In this application example, the first through hole forming the first through hole is provided in one of the plurality of insulating layers forming the first reflective film. In addition, a second through hole that constitutes a first through hole is provided in the conductive layer adjacent to the first substrate side of the insulating layer. And in planar view, the 2nd penetration hole is arranged inside the 1st penetration hole.
That is, the first through hole is stepped between the insulating layer provided with the first through hole and the conductive layer provided with the second through hole, and a part of the upper surface of the conductive layer is in the first through hole. Exposed to In such a configuration, for example, the first wiring electrode can be easily connected to the first conductive layer compared to a configuration in which only the side surface of the first conductive layer is exposed in the first through hole, and the charge of the first conductive layer Can be escaped properly.

  In the interference filter of this application example, the second substrate facing the first substrate is provided, the second reflection film is provided over the surface of the second substrate facing the first substrate, and an insulating layer is provided. And a conductive layer, wherein a portion of the second reflective film is provided along the stacking direction of the insulating layer and the conductive layer, and at least one of the conductive layers is exposed. Two through holes are provided, and a second wiring electrode connected to the second through hole and conductive to the conductive layer exposed from the second through hole is provided on the second reflective film. preferable.

In this application example, the second reflective film, which is a laminate of the insulating layer and the conductive layer as in the first reflective film, is provided on the second substrate facing the first substrate, and the second reflective film is electrically conductive. A second through hole is provided where part of the layer is exposed. A second wiring electrode connected to the second through hole and electrically connected to a part of the conductive layer of the second reflective film is provided on the second reflective film.
Therefore, as in the application example described above, even when the conductive layer of the second reflective film is charged, the charge can be released from the second wiring electrode, and the influence of the charging can be suppressed.

  The interference filter according to the application example includes a protrusion that protrudes from the first substrate toward the second substrate at a position overlapping the second through hole in the planar view and is inserted into the second through hole. The first wiring electrode is provided from the top of the first reflective film to the protruding end surface of the projecting portion, and a part of the second wiring electrode faces the first substrate of the second through hole. It is preferable that the first wiring electrode is extended to the second bottom surface and is in contact with the first wiring electrode provided on the protruding end surface.

By the way, in the case where the first wiring electrode and the second wiring electrode are connected to each other in the first substrate and the second substrate arranged opposite to each other with a predetermined distance, at least one of the first substrate and the second substrate In some cases, a projecting portion is provided, and an electrode is formed on the projecting portion to be connected to the other electrode (so-called bump connection). However, in the case of connecting a part of the first wiring electrode provided at the tip of the protrusion to the second wiring electrode provided on the second reflective film, at least the thickness dimension of the second reflective film which is a laminated body and The first substrate and the second substrate will be separated by the sum of the size of the protrusion and the size of the interference filter.
On the other hand, in the present application example, the protrusion protruding from the first substrate is inserted into the second through hole, and the second wiring electrode and the first wiring electrode are in contact at the bottom of the second through hole. Therefore, the first substrate and the second substrate can be brought close to each other, and the size of the interference filter can be reduced. In particular, by providing the second through hole penetrating the second reflection film, the bottom surface of the second through hole becomes flush with the substrate surface of the second substrate, and the interference filter can be further miniaturized. .

  In the interference filter of the application example, it is preferable that the protrusion protrudes from a first bottom surface facing the second substrate of the first through hole toward the second substrate.

  In the application example, the above-described protrusion protrudes from the bottom surface of the first through hole toward the second substrate. In the case of forming a projecting portion projecting from the top of the first reflective film, which is a laminate, toward the second substrate, the distance between the first substrate and the second substrate is increased by the thickness dimension of the first reflective film. On the other hand, the distance between the first substrate and the second substrate can be shortened by projecting the protrusion from the bottom surface of the first through hole. In particular, by providing the first through hole penetrating the first reflection film, the bottom surface of the first through hole becomes flush with the substrate surface of the first substrate, and the interference filter can be further miniaturized. .

  In the interference filter of this application example, it is preferable that particles having an electrical resistance value smaller than the electrical resistance value of the conductive layer be doped in a region other than the mirror region of the conductive layer.

  In this application example, particles having a low electric resistance (hereinafter, referred to as low-resistance particles) are doped in the region other than the mirror region. For example, in the case of using a Si layer as the conductive layer, P particles or B particles are doped. As described above, since the low-resistance particles are doped in regions other than the mirror region, charging in the conductive layer can be suppressed, and the influence of the charging can be reduced. In addition, since low resistance particles are not doped in the mirror region, the reflection characteristics of the first reflection film do not fluctuate due to the low resistance particles, and the performance deterioration of the interference filter can also be suppressed.

An optical filter device according to an application example according to the present invention is characterized by including the interference filter as described above and a case for housing the interference filter.
In this application example, as in the application example described above, the influence of charging of the dielectric multilayer film in the interference filter can be suppressed. Further, since the interference filter is housed in the housing, for example, adhesion of foreign matter to the reflective film can be suppressed, and the interference filter can also be protected from impact or the like.

An optical module according to an application example of the present invention includes the interference filter as described above, and a circuit unit for driving the interference filter.
In this application example, as in the application example described above, the influence of charging of the dielectric multilayer film in the interference filter can be suppressed. Therefore, it is not necessary to incorporate a circuit for performing complicated control in consideration of charging of the dielectric multilayer film as the circuit unit, so that the configuration of the circuit unit can be simplified and the cost of the optical module can be reduced.

In the optical module according to this application example, the circuit section preferably includes a ground circuit that sets the first wiring electrode to a predetermined reference potential.
In this application example, since the ground circuit is included in the circuit portion, when the conductive layer is charged, the charge of the conductive layer can be released from the first wiring electrode to the ground circuit.

An electronic device according to an application example of the present invention includes the interference filter as described above, and a control unit that controls the interference filter.
In this application example, as in the application example described above, the influence of charging in the dielectric multilayer film can be excluded in the interference filter, and light of a desired wavelength can be stably output from the interference filter without performing complicated control. be able to. Therefore, control of the interference filter in the electronic device can be facilitated.

FIG. 1 is a plan view showing a schematic configuration of a variable wavelength interference filter according to a first embodiment. Sectional drawing which shows schematic structure of the wavelength variable interference filter at the time of cut | disconnecting the AA of FIG. The figure which shows schematic structure of the 1st reflective film in 1st embodiment, and schematic structure of a 1st through hole. Sectional drawing which shows schematic structure of the wavelength variable interference filter at the time of cutting | disconnecting the BB line of FIG. The figure which shows schematic structure of the 2nd reflective film in 1st embodiment, and schematic structure of a 2nd through hole. The figure for demonstrating the electrification state of the 1st reflective film in the interference filter which has the conventional dielectric multilayer film in which the 1st through hole is not formed in the 1st reflective film. The figure for demonstrating the electrification state of the 1st reflective film in a first embodiment. The figure which shows the 1st glass substrate of the 1st board | substrate formation process in the manufacturing method of the wavelength variable interference filter of 1st embodiment. The figure which shows the 2nd glass substrate of the 2nd board | substrate formation process in the manufacturing method of the wavelength variable interference filter of 1st embodiment. The top view of the wavelength variable interference filter in 2nd embodiment. FIG. 11 is a cross-sectional view of a part of the variable wavelength interference filter cut along the line C-C in FIG. 10. Sectional drawing which shows schematic structure of the wavelength variable interference filter in 3rd embodiment. Sectional drawing which shows schematic structure of the optical filter device which concerns on 4th embodiment. FIG. 14 is a view showing an example of the configuration of the appearance of a printer according to a fifth embodiment. FIG. 14 is a block diagram showing a schematic configuration of a printer of a fifth embodiment. The figure which shows schematic structure of the spectrometer of 5th embodiment. FIG. 7 is a view showing an example of the shape of a first through hole according to a modification 1; FIG. 7 is a view showing another example of the shape of the first through hole according to the modification 1; FIG. 7 is a view showing another example of the shape of the first through hole according to the modification 1; FIG. 7 is a view showing another example of the shape of the first through hole according to the modification 1; Sectional drawing which shows the example of the connection structure of the 1st extraction electrode which concerns on the modification 5, and a 1st connection electrode. Sectional drawing which shows the other example of the connection structure of the 1st extraction electrode which concerns on the modification 5, and a 1st connection electrode.

First Embodiment
The optical module according to the first embodiment will be described below.
FIG. 1 is a plan view showing a schematic configuration of the variable wavelength interference filter 5 of the first embodiment. FIG. 2 is a cross-sectional view showing a schematic configuration of the variable wavelength interference filter 5 obtained by cutting FIG. 1 along line A-A.
The variable wavelength interference filter 5 includes a first substrate 51 and a second substrate 52, as shown in FIGS. 1 and 2. The first substrate 51 and the second substrate 52 are integrally formed by being bonded by a bonding film 53 such as a plasma-polymerized film containing, for example, siloxane as a main component.
The first reflective film 54 is provided on the first substrate 51, and the second reflective film 55 is provided on the second substrate 52. The first reflective film 54 and the second reflective film 55 have a mirror gap G. It is arranged opposite to each other. In addition, the variable wavelength interference filter 5 includes an electrostatic actuator 56 that changes the size of the mirror gap G.
The configuration of each part will be described in detail below.

(Configuration of first substrate 51)
As shown in FIG. 2, the first substrate 51 is provided with an electrode arrangement groove 511 and a gap forming portion 512 which are formed by etching, for example, on the surface facing the second substrate 52. The first substrate 51 is formed to have a large thickness, for example, with respect to the second substrate 52, and the first substrate 51 when the electrostatic attraction force is applied by the electrostatic actuator 56 is suppressed.
In addition, one end side (for example, side C5-C6 in FIG. 1) of the first substrate 51 protrudes further than one end side (side C1-C2) of the second substrate 52, and the wavelength variable interference filter 5 is It can be used as a fixing part at the time of fixing to a base etc.

  The electrode disposition groove 511 is formed in a substantially annular shape centering on a predetermined filter central axis O in a plan view (hereinafter simply referred to as a plan view) when the first substrate 51 is viewed from the substrate thickness direction. Further, in the first substrate 51, a lead-out groove 511A having the same depth as that of the electrode arrangement groove 511 is extended from the electrode arrangement groove 511 to the side C3-C4.

  The gap forming portion 512 is provided on the inner side (filter central axis O side) of the electrode disposition groove 511 in a plan view, and is formed so as to protrude to the second substrate 52 side as shown in FIG. The protruding end surface of the gap forming portion 512 is a flat surface, and is maintained parallel or substantially parallel to the movable surface 521A of the movable portion 521 of the second substrate 52.

FIG. 3 is a view showing a schematic configuration of the first reflection film 54 and the first through hole 543. As shown in FIG. FIG. 4 is a schematic cross-sectional view when the B-B line of FIG. 1 is cut.
The first reflective film 54 is provided across the surface of the first substrate 51 facing the second substrate 52. That is, the first reflection film 54 is formed so as to cover substantially the entire surface of the first substrate 51 facing the second substrate 52 (other than the portion where the first through holes 543 described later are provided).
The first reflection film 54 is composed of a plurality of film materials having a reflection characteristic and a transmission characteristic with respect to light in a predetermined wavelength range, and the film materials have dielectric properties having different refraction characteristics with respect to the light. Body multilayer film. Specifically, as shown in FIG. 3, in the first reflection film 54, a metal oxide film (hereinafter, abbreviated as oxide film 541), which is an insulating layer, and a metal film 542, which is a conductive layer, are alternately stacked. It is a laminated body comprised by. For example, in the present embodiment, SiO ₂ is used as the oxide film 541 of the high refractive layer, and Si which is a metalloid is used as the metal film 542 of the low refractive layer. The first reflective film 54 of such a dielectric multilayer film has high reflection characteristics in the near infrared to infrared region.
The layer constituting the outermost surface of the first reflective film 54 facing the second substrate 52 is a metal oxide film 541.

  Further, a first through hole 543 is provided in at least a part of the first reflection film 54. The first through hole 543 is along the direction from the outermost surface of the first reflective film 54 toward the first substrate 51 (the thickness direction of the first reflective film 54, the stacking direction of the metal oxide film 541 and the metal film 542) It is a hole formed. In the present embodiment, the first through hole 543 is formed to penetrate the first reflective film 54, and the substrate surface of the first substrate 51 (the surface facing the second substrate 52) is from the first through hole 543. Exposed. That is, the bottom surface 543 B of the first through hole 543 is the first substrate 51.

Further, in the present embodiment, the first through holes 543 are formed by communicating through holes formed in the respective oxide films 541 and the respective metal films 542. Here, the hole diameter of the through hole on the outermost surface of the first reflective film 54 (the oxide film 541 at the farthest position from the first substrate 51) is the largest, and the hole diameter of the through holes sequentially decreases toward the layer immediately below It becomes step-like). And each through-hole is arrange | positioned inside the through-hole of the layer immediately above in the planar view seen from the thickness dimension.
For example, the through hole (first through hole 541A) provided in the oxide film 541 on the outermost surface is a penetration of the metal film 542 formed immediately below (on the first substrate 51 side) the oxide film 541 on the outermost surface. It communicates with the hole (second through hole 542A), and constitutes a part of the first through hole 543. The hole diameter L1 of the first through hole 541A is larger than the hole diameter L2 of the second through hole 542A, and the second through hole 542A is disposed inside the first through hole 541A in plan view. Therefore, a part of the upper surface (the surface on the second substrate 52 side) of the metal film 54 immediately below the outermost surface oxide film 541 and the side surface of the metal film 542 are exposed to the inside of the first through hole 543. become.
The same applies to the other metal films 542, and by providing the second through holes 542A having a diameter smaller than the diameter of the first through holes 541A of the oxide film 541 disposed immediately above, one of the upper surfaces of the respective metal films 542 is provided. The part and the side face are exposed to the first through hole 543.
Further, the first through hole 543 may be provided anywhere as long as it is an area other than the gap forming portion 512, and in the present embodiment, the first through hole 543 is provided in the lead groove 511A. It is provided.

The first electrode 561 constituting the electrostatic actuator 56 is disposed on the first reflection film 54 formed over substantially the entire surface of the first substrate 51 facing the second substrate 52.
Specifically, the first electrode 561 is disposed on the first reflective film 54 formed on the bottom of the electrode disposition groove 511 of the first substrate 51. The first electrode 561 is formed in, for example, a substantially annular shape along the electrode disposition groove 511.
In the present embodiment, although a configuration in which one first electrode 561 is provided is shown, for example, a configuration in which two or more electrodes that are concentric circles centered on the filter center axis O may be provided. In addition, as a shape of the first electrode 561, for example, a configuration in which a notch communicating the inside and the outside of the ring may be provided in part. In this case, another electrode (for example, a capacitance detection electrode or the like disposed on the gap formation portion 512) independent of the first electrode 561 may be provided through the notch.

A first lead electrode 563 (see FIG. 1) extending to the side C3-C4 along the lead groove 511A is connected to the first electrode 561. In the present embodiment, the first electrode 561 is an electrode connected to a ground circuit or the like and maintained at a reference potential (for example, 0 V), and the first lead electrode 563 corresponds to the first wiring electrode of the present invention. Do.
The first extraction electrode 563 is connected to the first connection electrode 565 provided on the second substrate 52 side in the extraction groove 511A.

Here, as shown in FIG. 3, the first lead electrode 563 is connected to the first through hole 543 in the lead groove 511A. Specifically, the first lead-out electrode 563 is formed on the inner circumferential surface 543 A of the first through hole 543 and the bottom surface 543 B of the first through hole 543 from the oxide film 541 constituting the outermost surface of the first reflective film 54. It is formed to cover the surface of the first through hole 543. In addition, although the structure which covers the hole internal peripheral surface 543A of the 1st through hole 543, and the bottom face 543B of the 1st through hole 543 is illustrated here, at least the hole internal peripheral surface 543A of the 1st through hole 543 is covered. Just do it. Further, the inside of the first through hole 543 may be filled (filled) with the first lead electrode 563, and only a part of the first substrate 51 side may be used as an electrode material of the first lead electrode 563. It is good also as composition filled up.
As a result, part of the upper surface and the side surface of the metal film 542 exposed from the first through hole 543 are covered with the first lead electrode 563 to conduct.

Referring back to FIGS. 1 and 2, among the surfaces of the first substrate 51 facing the second substrate 52, the first bonding portion 513 is provided on the surface on which the electrode arrangement groove 511, the gap formation portion 512 and the lead groove 511A are not formed. Be The first bonding portion 513 is bonded to the second substrate 52 via the bonding film 53.
Further, as shown in FIG. 1 and FIG. 4, a part of the first lead-out electrode 563 (the electrode connection portion 563A) is extended to the first bonding portion 513, and in the first bonding portion 513, the second substrate It is connected to a first connection electrode 565 provided at 52.

  In the present embodiment, an example is shown in which the gap forming portion 512 is positioned closer to the second substrate 52 than the electrode arrangement groove 511. For example, depending on the wavelength range of light transmitted through the variable wavelength interference filter 5, the electrode arrangement The groove 511 may be positioned closer to the second substrate 52 than the gap forming portion 512. That is, a recess may be formed on the inner side (filter central axis O side) of the electrode disposition groove 511 in plan view, and the first reflection film 54 may be provided on the bottom surface of the recess.

(Configuration of second substrate 52)
The second substrate 52 corresponds to the substrate of the present invention. The one end side (side C3-C4 side) of the second substrate 52 protrudes to the outer side than the side C7-C8 of the first substrate 51, and the second substrate 52 constitutes the electrical component portion 560. In addition, a second reflective film 55 and a second electrode 562 are provided on the surface of the second substrate 52 facing the first substrate 51.
Then, on the surface of the second substrate 52 opposite to the first substrate 51, for example, an annular groove having a concave shape on the first substrate 51 side is formed, whereby the movable portion 521 and the movable portion 521 are formed. A holding portion 522 surrounding the outer periphery and a substrate outer peripheral portion 523 provided outside the holding portion 522 are formed.

  The movable portion 521 is formed to have a larger thickness than the holding portion 522, and in the present embodiment, for example, the movable portion 521 is formed to have the same size as the thickness of the substrate outer peripheral portion 523. The movable portion 521 faces the gap forming portion 512 in a plan view, and is formed to have a diameter larger than the diameter of the outer peripheral edge of the first electrode 561.

The holding portion 522 is a diaphragm that surrounds the periphery of the movable portion 521, and is formed to have a smaller thickness than the movable portion 521. Such a holding portion 522 is more easily bent than the movable portion 521, and the movable portion 521 can be displaced to the first substrate 51 side by a slight electrostatic attractive force. At this time, since the movable portion 521 has a larger thickness and greater rigidity than the holding portion 522, the shape of the movable portion 521 changes even when the movable portion 521 is pulled toward the first substrate 51 by electrostatic attraction. It can be suppressed to some extent.
In the present embodiment, the diaphragm-shaped holding portions 522 are illustrated, but the present invention is not limited thereto. For example, beam-shaped holding portions arranged at equal angular intervals around the filter central axis O of the movable portion 521 May be provided.

  The substrate outer peripheral portion 523 is a portion that holds the outer peripheral side of the holding portion 522. A bonding film 53 is bonded to a portion of the substrate outer peripheral portion 523 facing the first bonding portion 513 of the first substrate 51, and the bonding film 53 is bonded to the first substrate 51 via the bonding film 53.

Then, the second reflective film 55 is provided across the surface of the second substrate 52 facing the first substrate 51. That is, the second reflection film 55 is provided to cover substantially the entire surface of the surface of the second substrate 52 facing the first substrate 51 (a portion other than the second through holes 553 described later).
FIG. 5 is a view showing a schematic configuration of the second reflection film 55 and the second through hole 553. As shown in FIG.
Similar to the first reflective film 54, the second reflective film 55 is a laminate in which a high refractive layer having a high refractive index with respect to light of a predetermined wavelength and a low refractive layer having a low refractive index are alternately stacked (dielectric It is a multilayer film, and is composed of a metal oxide film (referred to as an oxide film 551) which is an insulating layer, and a metal film 552 which is a conductive layer. In the present embodiment, similarly to the first reflective film 54, the oxide film 551 (for example, SiO ₂ ) is used as the high refractive layer, and the metal film 552 (for example, Si) is used as the low refractive layer.
In the first reflection film 54 and the second reflection film 55, a region M facing the front end surface of the gap forming portion 512 is a mirror region M. The mirror area M is an area where incident light is multi-reflected between the first reflection film 54 and the second reflection film 55, and light of a wavelength according to the mirror gap G is strengthened by interference and emitted from the mirror area M Ru.

Further, in the same manner as the first reflection film 54, the second reflection film 55 is provided with a second through hole 553 at least in part. The second through holes 553 are formed along the direction from the outermost surface of the second reflective film 55 toward the second substrate 52 (the thickness direction of the second reflective film 55, and the stacking direction of the oxide film 551 and the metal film 552). Hole. Further, like the first through holes 543, the second through holes 553 are formed in a step shape in which the hole diameter of the through holes in each layer becomes smaller toward the second substrate 52.
Therefore, a part of the upper surface (the surface on the first substrate 51 side) and the side surface of each metal film 552 are exposed in the second through hole 553.
Further, as in the case of the first through hole 543, the second through hole 553 may be provided anywhere as long as it is a region other than the gap forming portion 512. In the present embodiment, the second through hole 553 is provided at a position facing the lead groove 511A.

Then, a second electrode 562 is disposed on the second reflective film 55 of the second substrate 52. The second electrode 562 is formed, for example, in the same shape as the first electrode 561 and provided at a position facing the first electrode 561.
In addition, a second lead electrode 564 (see FIG. 1) extending from the outer peripheral edge of the second electrode 562 to the electrical component unit 560 is provided through a region facing the lead groove 511A.

Furthermore, on the surface of the second substrate 52 facing the first substrate 51, a first connection electrode 565 provided from the region facing the lead groove 511A to the electrical component portion 560 is provided. The first connection electrode 565 corresponds to the second wiring electrode of the present invention, and is also connected to the second through hole 553. Specifically, similarly to the first lead electrode 563 connected to the first through hole 543, the first connection electrode 565 is formed from the inner peripheral surface 553A of the second through hole 553 to the bottom surface 553B. The respective metal films 552 exposed from the second through holes 553 are conducted.
Further, as shown in FIGS. 1 and 4, a part of the first connection electrode 565 (electrode connection part 565A) faces a part of the first bonding part 513 (electrode connection part 563A of the first lead electrode 563). When the first substrate 51 and the second substrate 52 are bonded by the bonding film 53, the first substrate 51 and the second substrate 52 are brought into contact by being in contact with the first lead electrode 563. As a result, the metal films 542 of the first electrode 561, the first extraction electrode 563, the first connection electrode 565, the metal films 542 of the first reflection film 54, and the metal films 552 of the second reflection film 55 are conducted to have the same potential. .

[Charging of each reflective film when driving the variable wavelength interference filter 5]
Next, charging of the dielectric multilayer (the first reflective film 54 and the second reflective film 55) when the above-described wavelength variable interference filter 5 is driven will be described.
Here, the charging of the first reflective film 54 when a voltage is applied to the electrostatic actuator 56 will be described, and the charging of the second reflective film 55 is the same as that of the first reflective film 54, so the description will be omitted.

  In the variable wavelength interference filter 5 as described above, the second lead-out electrode 564 and the first connection electrode 565 are connected to a drive circuit (driver circuit) for driving the variable wavelength interference filter 5, and the drive circuit The voltage applied between the first electrode 561 and the second electrode 562 constituting the actuator 56 is controlled. Thereby, an electrostatic attractive force acts between the first electrode 561 and the second electrode 562, and the holding portion 522 is deformed to displace the movable portion 521 toward the first substrate 51, thereby changing the dimension of the mirror gap G. It becomes possible.

FIG. 6 is a diagram for explaining the charged state of the first reflection film 54 when the first through hole 543 is not formed in the first reflection film 54 (conventional interference filter). Note that FIG. 6 shows only the oxide film 541 and the metal film 542 for simplification of the description.
As described above, when the electrostatic actuator 56 is applied, charges corresponding to the applied voltage are accumulated (charged) in the first electrode 561. As a result, as shown in FIG. 6, local polarization also occurs in the first reflective film 54 disposed immediately below the first electrode 561. In the example shown in FIG. 6, the application of voltage causes the first electrode 561 to be charged to +, whereby local polarization occurs in the oxide film 541 disposed on the outermost surface of the first reflective film 54 immediately below. In the oxide film 541, the portion directly below the first electrode 561 is charged to-. In this case, in the metal film 542 disposed immediately below the oxide film 541, a positive charge is accumulated and charged.
Such polarization is gradually relieved through the metal film 542, but is accumulated in the charged metal film 542 (particularly, the metal film 542 disposed in the vicinity of the outermost surface of the first reflective film 54). The influence of the charge causes a phenomenon that the mirror gap G gradually narrows. That is, the area functioning as the electrostatic actuator 56 is apparently enlarged.

FIG. 7 is a view for explaining the charged state of the first reflective film 54 in the present embodiment. Note that FIG. 7 shows only one oxide film 541 and one metal film 542 for simplification of the description.
In the present embodiment, as a drive circuit, a circuit that sets the first connection electrode 565 to a reference potential (for example, a ground circuit that applies 0 V to the first connection electrode 565) is used, as shown in FIG. The charge accumulated in the film 542 can be released to the first connection electrode 565 connected to the ground circuit via the first through hole 543 and the first connection electrode 565. As a result, the charging of each metal film 542 is suppressed, and the influence of the charging as described above is also suppressed.

  6 and 7 described the charging of the first reflective film 54, but the second reflective film 55 is the same. That is, even when charge is accumulated in each metal film 552 of the second reflective film 55, the charge can be released from the second through hole 553 to the first connection electrode 565.

[Method of Manufacturing Wavelength Variable Interference Filter 5]
Next, a method of manufacturing the variable wavelength interference filter 5 as described above will be described.
In the manufacture of the variable wavelength interference filter 5, the first glass substrate M 1 (see FIG. 8) for forming the first substrate 51 and the second glass substrate M 2 (see FIG. 9) for forming the second substrate 52 The first substrate forming step and the second substrate forming step are performed. Thereafter, a substrate bonding process is performed, and the first glass substrate M1 processed in the first substrate forming process and the second glass substrate M2 processed in the second substrate forming process are bonded. Furthermore, a cutting process is performed, the first glass substrate M1 and the second glass substrate M2 are singulated to form the variable wavelength interference filter 5.
Each step will be described below based on the drawings.

(First substrate formation process)
FIG. 8 is a view showing a first glass substrate in the first substrate forming step.
In the substrate forming step, first, both surfaces of the first glass substrate M1 which is a material for manufacturing the first substrate 51 are precisely polished until the surface roughness Ra becomes 1 nm or less, for example, to a thickness dimension of 500 μm.

Next, as shown in the first of FIG. 8, the substrate surface of the first glass substrate M1 is processed by etching.
Specifically, wet etching using, for example, a hydrofluoric acid system (BHF or the like) is repeatedly performed on the first glass substrate M1 using the resist pattern patterned by the photolithography method as a mask. First, the formation positions of the electrode arrangement groove 511, the gap forming portion 512, and the lead groove 511A (not shown in FIG. 8) are etched to the position of the protruding tip of the gap forming portion 512. Thereafter, the electrode placement groove 511 and the lead-out groove 511A are etched to a desired depth position.

Next, as shown in the second of FIG. 8, the first reflective film 54 is formed on the entire surface of the first glass substrate M1 on which the electrode placement groove 511, the gap formation portion 512, and the lead-out groove 511A are formed. Form.
In the formation of the first reflection film 54, the oxide film 541 and the metal film 542 which constitute the first reflection film 54 are alternately laminated by, for example, a sputtering method, a vapor deposition method, or the like.
At this time, even when a step having a steep slope or an edge due to wet etching or the like is present in the first glass substrate M1, the inclination of the step portion is gentle by laminating the dielectric layers at the time of forming the dielectric multilayer film. become. Therefore, breakage when forming the electrodes 561 and 563 on the first reflective film 54 is suppressed.

Next, as shown in the third in FIG. 8, the first through holes 543 are formed in the first reflection film 54 at the predetermined position (in the present embodiment, the lead-out groove 511A).
In the formation of the first through hole 543, first, a resist is formed on the first reflection film 54, and a pattern for forming the first through hole 541A of the hole diameter L1 is formed in the oxide film 541 located on the outermost surface. Then, the oxide film 541 on the outermost surface is wet etched using the metal film 542 immediately below as an etching stopper.
Thereafter, the resist is removed, and a resist covering the first reflective film 54 is formed again. Then, in the first through holes 541A of the oxide film 541 previously formed by etching, a pattern for forming the second through holes 542A of the hole diameter L2 (L2 <L1) is formed. Thereafter, the metal film 542 immediately below the oxide film 541 on the outermost surface is etched using the oxide film 541 immediately below the metal film 542 as an etching stopper.
Thereafter, the process is repeated in the same manner to gradually reduce the hole diameter of the through holes in each layer, whereby the first through holes 543 having steps are formed at the positions of the respective layers.
Here, in order to simplify the description, the side surfaces of each oxide film 541 and each metal film 542 are substantially parallel to the thickness direction (the stacking direction of oxide film 541 and metal film 542), that is, the first The figure which becomes substantially perpendicular to the substrate surface of substrate 51 is shown. However, in practice, side etching occurs in the formation of the through holes 541A and 542A by wet etching, so the side surfaces of each oxide film 541 and each metal film 542 are inclined with respect to the stacking direction.

Thereafter, an electrode material of the first electrode 561 and the first lead-out electrode 563 is formed on the first glass substrate M1 using a vapor deposition method, a sputtering method, or the like. Then, the formed electrode material is patterned. At this time, the electrode material is also deposited in the first through hole 543, whereby the first electrode 561, the first lead electrode 563 and the metal films 542 are electrically conducted.
By the above, as shown to the 4th of FIG. 8, the 1st glass substrate in which the 1st reflective film 54, the 1st electrode 561, and the 1st substrate 51 in which the 1st lead-out electrode 563 was provided is arranged in multiple arrays M1 is formed.

(Second substrate formation process)
FIG. 9 is a view showing the state of the second glass substrate M2 in the second substrate forming step.
In the second substrate forming step, first, both surfaces of the second glass substrate M2 which is a material for manufacturing the second substrate 52 are precisely polished until the surface roughness Ra becomes 1 nm or less, for example, to a thickness dimension of 500 μm.

  Then, a Cr / Au layer is formed on the surface of the second glass substrate M2, this Cr / Au layer is used as an etching mask, and a region corresponding to the holding portion 522 is etched using, for example, hydrofluoric acid (BHF etc.) . Thereafter, the Cr / Au layer used as the etching mask is removed to form the substrate shape of the second substrate 52 as shown in the first of FIG.

  Next, as shown in the second of FIG. 9, a second reflective film 55 is formed. The second reflective film 55 can also be formed by the same method as the first reflective film 54, and the oxide film 551 and the metal film 552 forming the second reflective film 55 are alternately sputtered or deposited. It forms into a film and laminates by this.

Next, as shown in the third in FIG. 9, the second through holes 553 are formed in the second reflection film 55 at the predetermined position (in the present embodiment, the position facing the lead groove 511A).
The formation of the second through hole 553 is similar to that of the first through hole 543, and the description thereof is omitted here.

Thereafter, the second electrode 562, the second lead electrode 564, and the first connection electrode 565 are formed on the second glass substrate M2. The formation of the second electrode 562, the second extraction electrode 564, and the first connection electrode 565 is performed in the same step as the formation of the first electrode 561, and after an electrode material is formed using an evaporation method, a sputtering method, or the like. And patterning the deposited electrode material. At this time, the electrode material is also deposited in the second through holes 553 so that the first connection electrodes 565 and the metal films 552 are electrically conducted.
As described above, as shown in the fourth in FIG. 9, the second reflective film 55, the second electrode 562, the second lead electrode 564, and the second substrate 52 provided with the first connection electrode 565 are arranged in a plurality of arrays. The second glass substrate M2 is formed.

(Substrate bonding process)
Next, the substrate bonding step and the cutting step will be described.
In the substrate bonding step, first, polyorganosiloxane is mainly used for the first bonding portion 513 of the first glass substrate M1 and the portion of the substrate outer peripheral portion 523 of the second glass substrate M2 to be bonded to the first bonding portion 513. A plasma-polymerized film as a component is formed by plasma CVD or the like.
Then, O ₂ plasma processing or UV processing is performed to apply activation energy to each plasma polymerized film of the first glass substrate M 1 and the second glass substrate M ₂ . In the case of O ₂ plasma treatment, the process is carried out for 30 seconds under the conditions of an O ₂ flow rate of 1.8 × 10 ⁻³ (m ³ / h), a pressure of 27 Pa, and an RF power of 200 W. In the case of UV treatment, excimer UV (wavelength 172 nm) is used as a UV light source for 3 minutes.
After applying activation energy to the plasma-polymerized film, alignment adjustment of the first glass substrate M1 and the second glass substrate M2 is performed, and the first glass substrate M1 and the second glass substrate M2 are overlapped via the plasma-polymerized film. Align and apply a load of, for example, 98 (N) to the joint portion for 10 minutes. Thereby, 1st glass substrate M1 and 2nd glass substrate M2 are joined.
At this time, a portion of the first lead-out electrode 563 disposed in the first bonding portion 513 and a portion of the first connection electrode 565 are in contact with each other and pressed in a direction approaching each other. The extraction electrode 563 and the first connection electrode 565 are connected.

(Cutting process)
Next, the cutting step will be described.
In the cutting step, the first substrate 51 and the second substrate 52 are cut out in chip units to form the variable wavelength interference filter 5 as shown in FIGS. 1 and 2. For the cutting of the first glass substrate M1 and the second glass substrate M2, for example, scribing break or laser cutting can be used.

[Operation and effect of this embodiment]
The variable wavelength interference filter 5 of the present embodiment is a first reflection formed of a laminated body in which an oxide film 541 and a metal film 542 are laminated over substantially the entire surface of the first substrate 51 facing the second substrate 52. A film 54 is formed. Such a first reflective film 54 does not require a patterning step such as lift-off, and the manufacturing efficiency is enhanced.
Then, the first reflection film 54 is provided with the first through hole 543 to which the metal film 542 is exposed, and the first lead electrode 563 provided on the surface of the first reflection film 54 is connected to the first through hole 543 Then, the metal film 542 exposed from the first through hole 543 is conducted. Therefore, even when each metal film 542 of the first reflection film 54 is charged when a voltage is applied to the electrostatic actuator 56, the charge of the metal film 542 can be released to the first lead-out electrode 563.
Thereby, for example, the influence of the charging of the first reflective film 54, such as the mirror gap G becoming smaller gradually, can be suppressed.

The same applies to the second substrate 52, and the second reflective film is formed of a laminate in which the oxide film 551 and the metal film 552 are stacked over substantially the entire surface of the second substrate 52 facing the first substrate 51. 55 are formed. Therefore, the patterning process by lift-off etc. becomes unnecessary, and the manufacturing efficiency of the second substrate 52 can be improved.
Then, the second reflection film 55 is provided with a second through hole 553 to which the metal film 552 is exposed, and the first connection electrode 565 provided on the surface of the second reflection film 55 is connected to the second through hole 553 Then, the metal film 552 exposed from the second through hole 553 is conducted. Therefore, even when each metal film 552 of the second reflective film 55 is charged when a voltage is applied to the electrostatic actuator 56, the charge of the metal film 552 can be released to the first connection electrode 565.
Thereby, for example, the influence of the charging of the second reflective film 55, such as the mirror gap G becoming smaller gradually, can be suppressed.

In the present embodiment, the first through holes 543 are a first through hole 541 A formed in the oxide film 541 forming the first reflective film 54 and a second of the metal film 542 formed immediately below the oxide film 541. The second through hole 542A is located inside the first through hole 541A in plan view including the through hole 542A. Therefore, a part of the upper surface and the side surface of the metal film 542 are exposed to the first through hole 543. In this case, when the first lead-out electrode 563 extending from the first reflection film 54 to the inside of the first through hole 543 is formed by a method such as sputtering, the first lead-out electrode 563 is not only the side surface of the metal film 542 It will also touch part of the upper surface. Therefore, the problem that the first lead-out electrode 563 and the respective metal films 542 are disconnected can be suppressed, and the charge accumulated in the metal film 542 can be released to the first lead-out electrode 563.
The same applies to the second through holes 553. Through holes are provided in each layer of the oxide film 551 and the metal film 552, and are formed in a step shape in which the hole diameter of the through holes in each layer decreases toward the second substrate 52. Thus, the problem of disconnection between the first connection electrode 565 and each metal film 552 can be suppressed, and the charge stored in the metal film 552 can be released to the first connection electrode 565.

In the present embodiment, the first lead electrode 563 connected to the first through hole 543 and the first connection electrode 565 connected to the second through hole 553 are connected.
Thus, by connecting the first connection electrode 565 extended to the electric part 560 to, for example, the ground circuit or the like, the charges accumulated in both the first reflective film 54 and the second reflective film 55 can be released. it can. That is, compared with the case where the electrode terminal for releasing the charge of the first reflection film 54 and the electrode terminal for releasing the charge accumulated in the second reflection film 55 are separately provided, the wavelength variable interference filter 5 of The configuration can be simplified.

Second Embodiment
Next, a second embodiment will be described.
In the first embodiment, in a part of the first bonding portion 513, a part of the first lead-out electrode 563 is in contact with a part of the first connection electrode 565.
On the other hand, the second embodiment is different from the first embodiment in that the first lead electrode 563 and the first connection electrode 565 are connected between the lead groove 511A and the second substrate 52. .
In the following description, the components already described will be assigned the same reference numerals and descriptions thereof will be omitted or simplified.

FIG. 10 is a plan view of the variable wavelength interference filter 5A in the second embodiment, and FIG. 11 is a cross-sectional view of part of the variable wavelength interference filter 5A cut along the line C-C in FIG.
In the variable wavelength interference filter 5A of the present embodiment, as in the first embodiment, the first reflective film formed of a dielectric multilayer film over substantially the entire surface of the first substrate 51 facing the second substrate 52. 54 are formed.
Then, as in the first embodiment, a first through hole 543 penetrating the first reflection film 54 is formed in a part of the lead groove 511A.
Although FIG. 11 shows an example in which the inner circumferential surface 543A of the first through hole 543 is parallel to the stacking direction of the oxide film 541 and the metal film 542, the respective layers are stepped as in the first embodiment. The first through hole 543 may have a smaller diameter as it approaches the first substrate 51.

In the present embodiment, the first substrate 51 is provided with a protrusion 514 that protrudes toward the second substrate 52 from the surface of the lead groove 511A that is the bottom surface 543B of the first through hole 543 facing the second substrate 52. There is. The protrusion tip end surface 514A of the protrusion 514 is parallel or substantially parallel to the surface of the second substrate 52 facing the first substrate 51.
The first lead-out electrode 563 is connected to the first through hole 543 as in the first embodiment, and further, the tip end surface 514A of the protrusion 514 protrudes from the inner circumferential surface 543A of the first through hole 543. Cover the

On the other hand, as in the first embodiment, the second reflection film 55 is formed on substantially the entire surface of the second substrate 52 facing the first substrate 51, as in the first embodiment.
And in this embodiment, the second through hole 553 is provided at a position overlapping with the first through hole 543 in plan view. Further, in plan view, the outer peripheral edge of the bottom surface 553B of the second through hole 553 is located outside the protruding tip surface 514A of the protrusion 514, and the protrusion 514 is inserted into the second through hole 553.
Further, the first connection electrode 565 is connected to the second through hole 553 as in the first embodiment, and covers the inner peripheral surface 553A of the second through hole 553 and the bottom surface 553B.

Here, in the present embodiment, when the first substrate 51 and the second substrate 52 are bonded by the bonding film 53, the protrusion dimension of the protrusion 514, the thickness dimension of the first lead electrode 563, and the thickness of the first connection electrode 565. The total dimension of the thickness dimension is formed to be equal to the dimension from the surface of the lead groove 511A opposed to the second substrate 52 to the surface of the second substrate 52 opposed to the lead groove 511A.
Therefore, when the first substrate 51 and the second substrate 52 are bonded by the bonding film 53, the first connection electrode 565 provided on the bottom surface 553B of the second through hole 553 and the protruding end surface 514A of the protruding portion 514 are provided. The first extraction electrode 563 is in contact with the first extraction electrode 563. As a result, the metal films 542 of the first reflective film 54, the metal films 552 of the second reflective film 55, the first lead electrodes 563 and the first connection electrodes 565 are conducted.

[Operation and effect of the second embodiment]
In the variable wavelength interference filter 5A of the present embodiment, it protrudes from the bottom surface 543B (corresponding to the first bottom surface in the present invention) of the first through hole 543 of the first substrate 51 toward the second substrate 52 and A protrusion 514 is provided in which a part of the first lead electrode 563 is extended. In addition, the second through hole 553 is provided at a position overlapping the protrusion 514 in a plan view, and a portion of the first connection electrode 565 is provided on the bottom surface 553B of the second through hole (corresponding to the second bottom surface in the present invention). Is extended. Then, when the first substrate 51 and the second substrate 52 are bonded by the bonding film 53, the protrusion 514 is inserted into the second through hole 553, and the first lead electrode 563 provided on the protrusion tip surface 514 A is , And is connected to a first connection electrode 565 provided on the bottom surface 553B of the second through hole 553.

In such a configuration, the first substrate 51 and the second substrate 52 can be brought close to each other, and the size of the variable wavelength interference filter 5A can be reduced.
That is, in the configuration in which the first lead-out electrode 563 provided on the projecting tip end surface 514A of the projecting portion 514 is connected to the first connection electrode 565 of the second substrate 52, the second lead-out film 55 which is a dielectric multilayer film is provided. It is conceivable to connect the first lead electrode 563 of the protrusion 514 to the first connection electrode 565. However, the first reflective film 54 and the second reflective film 55 formed of the dielectric multilayer film have a thickness dimension exceeding 1 μm. Therefore, in this case, the distance between the first substrate 51 and the second substrate 52 is the protrusion dimension of the protrusion 514, the thickness dimension of the second reflection film 55, the thickness dimension of the first lead-out electrode 563, and the distance of the first connection electrode 565. It will open by the total dimension of the thickness dimension.
On the other hand, in the configuration in which the first lead electrode 563 and the first connection electrode 565 are connected by inserting the protrusion 514 into the second through hole 553, the thickness dimension of the second reflective film 55 is compared to the above configuration. Therefore, the distance between the first substrate 51 and the second substrate 52 can be reduced.

Further, in the present embodiment, the protrusion 514 protrudes from the bottom surface 543B of the first through hole 543 to the second substrate 52 side.
Therefore, the distance between the first substrate 51 and the second substrate 52 is reduced by the thickness dimension of the first reflective film 54 as compared with the case where the protrusion 514 is formed on the first reflective film 54 which is a dielectric multilayer film. it can.

Third Embodiment
Next, the third embodiment will be described.
In the first embodiment and the second embodiment described above, an example in which the metal film 542 of the first reflective film 54 and the metal film 552 of the second reflective film 55 are film layers having uniform electrical resistance has been shown. On the other hand, the third embodiment is different from the above embodiment in that the electric resistances of the metal films 542 and 552 are partially different.

FIG. 12 is a cross-sectional view showing a schematic configuration of the wavelength tunable interference filter 5B in the third embodiment.
In the present embodiment, the first reflection film 54 and the second reflection film 55 have different electric resistances in the metal films 542 and 552 in the mirror area M and the area (outside area N) other than the mirror area M. .
Specifically, among the metal films 542 and 552, in the outer region N, particles (low-resistance particles) having an electric resistance value higher than that of the metal or metalloid constituting the metal films 542 and 552 are included. It is doped. For example, in the present embodiment, Si is used as the metal films 542 and 552. In this case, in the outer region N, low resistance particles having a higher electric resistance than Si such as P and B are doped. As a method of doping these low resistance particles, any method may be used, and examples thereof include ion implantation and thermal diffusion.
The metal films 542 and 552 in the mirror region M are not doped with the above-described low-resistance particles. Therefore, the reflection characteristics of the mirror region M of the first reflection film 54 and the second reflection film 55 are uniformly maintained, and the characteristic deterioration due to the doped particles is suppressed.

[Operation and effect of the third embodiment]
In the present embodiment, the metal film 542 of the first reflective film 54 and the metal film 552 of the second reflective film 55, which are conductive layers, have low resistances such as P and B whose electric resistance value is higher than Si in the outer region N. The particles are doped. As described above, the low resistance particles are doped in the outer region N, so that the charge does not easily move in the metal films 542 and 552, and the charging hardly occurs. Therefore, the influence of the charging of the first reflective film 54 and the second reflective film 55 can be suppressed.
On the other hand, in the mirror region M, since low resistance particles are not doped, the reflection characteristics of the first reflection film 54 and the second reflection film 55 do not fluctuate due to the low resistance particles. Therefore, the performance degradation of the variable wavelength interference filter 5B can also be suppressed.

Fourth Embodiment
Next, as a fourth embodiment, an optical filter device provided with the variable wavelength interference filters 5, 5A, 5B as shown in the first to third embodiments will be described.
FIG. 13 is a cross-sectional view showing a schematic configuration of an optical filter device 600 according to the fourth embodiment.
As shown in FIG. 13, the optical filter device 600 includes a housing 610 and the variable wavelength interference filter 5 housed inside the housing 610. Here, although the example which accommodates the wavelength variable interference filter 5 shown in 1st embodiment in the housing | casing 610 is shown, the wavelength variable interference filter 5B of 2nd embodiment may be accommodated.

  The housing 610 includes a base 620 and a lid 630, as shown in FIG. By joining the base 620 and the lid 630, a housing space is formed inside, and the variable wavelength interference filter 5 is housed in the housing space. In addition, although this embodiment illustrates the optical filter device 600 in which the wavelength variable interference filter 5 shown in the first embodiment is accommodated, the wavelength variable interference filter 5A of the second embodiment and the wavelength of the third embodiment The variable interference filter 5B may be stored.

(Base configuration)
The base 620 is made of, for example, a ceramic or the like. The base 620 includes a pedestal 621 and a side wall 622.
The pedestal 621 is formed in a flat plate shape having, for example, a rectangular outer shape in a filter plan view, and the cylindrical side wall 622 rises from the outer peripheral portion of the pedestal 621 toward the lid 630.

The pedestal 621 includes an opening 623 penetrating in the thickness direction. The opening 623 includes a region overlapping the first reflective film 54 and the second reflective film 55 in a plan view of the pedestal 621 viewed from the thickness direction with the wavelength variable interference filter 5 housed in the pedestal 621. It is provided as.
Further, a glass member 627 covering the opening 623 is joined to the surface (base outer surface 621 B) of the pedestal 621 opposite to the lid 630. Bonding between the pedestal 621 and the glass member 627 is, for example, low melting point glass bonding using glass frit (low melting glass) which is a piece of glass which is melted and quenched rapidly at high temperature, adhesion by epoxy resin etc. Can be used. In the present embodiment, the inside of the storage space is maintained airtight in a state of being maintained under reduced pressure. Therefore, it is preferable that the pedestal portion 621 and the glass member 627 be bonded using low melting point glass bonding.

Further, an inner terminal portion 624 connected to the first connection electrode 565 and the second lead-out electrode 564 of the wavelength variable interference filter 5 is provided on the inner surface (base inner side surface 621A) facing the lid 630 of the pedestal portion 621 There is. The inner terminal portion 624, and the first connection electrode 565 and the second lead electrode 564 are connected by wire bonding using a wire such as Au, for example. In addition, although wire bonding is illustrated in this embodiment, you may use FPC (Flexible Printed Circuits) etc., for example.
In the pedestal 621, a through hole 625 is formed at a position where the inner terminal 624 is provided. The inner terminal portion 624 is connected to the outer terminal portion 626 provided on the base outer side surface 621 B of the pedestal portion 621 through the through hole 625.

  The side wall portion 622 rises from the edge portion of the pedestal portion 621 and a surface (end surface 622A) of the side wall portion 622 provided around the periphery of the base inner side surface 621A facing the lid 630 is parallel or substantially parallel to the base inner side surface 621A, for example. It becomes a parallel flat surface.

  Then, the variable wavelength interference filter 5 is fixed to the base 620 using a fixing material 64 such as an adhesive. At this time, the variable wavelength interference filter 5 may be fixed to the pedestal 621 or may be fixed to the side wall 622. Although the fixing material 64 may be provided at a plurality of positions, the wavelength variable interference filter 5 is fixed at one place in order to suppress transfer of the stress of the fixing material 64 to the wavelength variable interference filter 5. Is preferred.

(Structure of lid)
The lid 630 is a transparent member having a rectangular outer shape in a plan view, and is made of, for example, glass or the like.
The lid 630 is joined to the side wall portion 622 of the base 620, as shown in FIG. As this bonding method, for example, bonding using low melting glass can be exemplified.

[Operation and effect of the fourth embodiment]
In the optical filter device 600 of the present embodiment as described above, since the variable wavelength interference filter 5 is protected by the housing 610, it is possible to prevent damage to the variable wavelength interference filter 5 due to an external factor.
Further, as described above, even if the first reflective film 54 and the second reflective film 55 are charged, the variable wavelength interference filter 5 performs the first connection of the charges of the metal films 542 and 552 which are conductive layers. It can be released from the electrode 565. That is, in the optical filter device 600, the outer terminal portion 626 electrically connected to the first connection electrode 565 is connected to a circuit such as a ground circuit to which a reference potential is applied, or to a metal case in an electronic device. Thus, charging of the first reflection film 54 and the second reflection film 55 of the variable wavelength interference filter 5 can be easily suppressed.

Fifth Embodiment
Next, as a fifth embodiment, a printing apparatus as an example of an electronic apparatus provided with the variable wavelength interference filters 5, 5A, 5B of the first to third embodiments or the optical filter device 600 of the fourth embodiment. The (printer) will be described.

[Schematic Configuration of Printer]
FIG. 14 is a view showing an example of the external appearance of the printer 10 according to the fourth embodiment. FIG. 15 is a block diagram showing a schematic configuration of the printer 10 of the present embodiment.
As shown in FIG. 14, the printer 10 includes a supply unit 11, a conveyance unit 12, a carriage 13, a carriage movement unit 14, and a control unit 15 (see FIG. 15). The printer 10 controls the units 11, 12, and 14 and the carriage 13 based on print data input from an external device 20 such as a personal computer, for example, and prints an image on the medium A. In addition, the printer 10 according to the present embodiment forms a color patch for color measurement at a predetermined position on the medium A based on the print data for calibration set in advance, and performs spectrometry on the color patch. In this way, the printer 10 compares the actual measurement value for the color patch with the calibration print data to determine whether or not there is a color shift in the printed color, and if there is a color shift, based on the actual measurement value. Perform color correction.
Hereinafter, each configuration of the printer 10 will be specifically described.

The supply unit 11 is a unit for supplying the medium A to be an image forming target to an image forming position. The supply unit 11 includes, for example, a roll body 111 (see FIG. 14) on which the medium A is wound, a roll drive motor (not shown), a roll drive wheel train (not shown), and the like. Then, based on the command from the control unit 15, the roll drive motor is rotationally driven, and the rotational force of the roll drive motor is transmitted to the roll body 111 via the roll drive wheel train. As a result, the roll body 111 is rotated, and the paper surface wound around the roll body 111 is supplied to the downstream side (+ Y direction) in the Y direction (sub scanning direction).
In addition, in this embodiment, although the example which supplies the paper surface wound by the roll body 111 is shown, it is not limited to this. For example, the medium A may be supplied by any supply method, such as supplying the medium A such as a sheet of paper loaded on a tray or the like, for example, one sheet at a time by a roller or the like.

The transport unit 12 transports the medium A supplied from the supply unit 11 along the Y direction. The conveyance unit 12 includes a conveyance roller 121, a conveyance roller 121 and a medium A, and includes a driven roller (not shown) driven by the conveyance roller 121 and a platen 122.
When the driving force from the conveyance motor (not shown) is transmitted to the conveyance roller 121 and the conveyance motor is driven by the control of the control unit 15, the conveyance roller 121 is rotationally driven by its rotational force and the medium A is interposed between it and the driven roller. The sheet is conveyed along the Y direction in a pinched state. Further, on the downstream side (+ Y side) of the transport roller 121 in the Y direction, a platen 122 facing the carriage 13 is provided.

The carriage 13 includes a printing unit 16 that prints an image on the medium A, and a spectrometer 17 that performs spectroscopic measurement of a predetermined measurement position T (see FIG. 13) on the medium A.
The carriage 13 is provided so as to be movable by the carriage movement unit 14 along the main scanning direction intersecting the Y direction.
In addition, the carriage 13 is connected to the control unit 15 by the flexible circuit 131, and executes printing processing by the printing unit 16 and spectroscopy measurement processing by the spectroscope 17 based on an instruction from the control unit 15.
The detailed configuration of the carriage 13 will be described later.

The carriage moving unit 14 constitutes a moving mechanism in the present invention, and reciprocates the carriage 13 along the X direction based on a command from the control unit 15.
The carriage moving unit 14 includes, for example, a carriage guide shaft 141, a carriage motor 142, and a timing belt 143.
The carriage guide shaft 141 is disposed along the X direction, and both ends thereof are fixed to, for example, a housing of the printer 10. The carriage motor 142 drives the timing belt 143. The timing belt 143 is supported substantially parallel to the carriage guide shaft 141, and a part of the carriage 13 is fixed. Then, when the carriage motor 142 is driven based on the command of the control unit 15, the timing belt 143 travels in forward and reverse directions, and the carriage 13 fixed to the timing belt 143 is guided by the carriage guide shaft 141 to reciprocate.

Next, the configurations of the printing unit 16 and the spectroscope 17 provided on the carriage 13 will be described based on the drawings.
[Configuration of printing unit 16]
The printing unit 16 separately discharges the ink onto the medium A at a portion facing the medium A to form an image on the medium A.
In the printing unit 16, ink cartridges 161 corresponding to inks of a plurality of colors are detachably mounted, and the ink is supplied from each ink cartridge 161 to an ink tank (not shown) through a tube (not shown) . In addition, nozzles (not shown) for discharging ink droplets are provided on the lower surface (a position facing the medium A) of the printing unit 16 corresponding to each color. For example, piezo elements are arranged in these nozzles, and by driving the piezo elements, ink droplets supplied from the ink tank are ejected and land on the medium A, whereby dots are formed.

[Spectroscope configuration]
FIG. 16 is a view showing a schematic configuration of the spectroscope 17. As shown in FIG.
The spectroscope 17 is an optical module according to the present invention, and includes a light source unit 171, an optical filter device 600, a light receiving unit 173, a light guiding unit 174, and a circuit unit 175, as shown in FIG. .
The spectroscope 17 emits illumination light from the light source section 171 to the measurement position T on the medium A, and causes the light component reflected at the measurement position T to be incident on the optical filter device 600 by the light guide section 174. Then, the optical filter device 600 has the configuration of the third embodiment, emits (transmits) light of a predetermined wavelength from the reflected light, and causes the light receiving unit 173 to receive the light. Further, the optical filter device 600 can select the transmission wavelength based on the control of the control unit 15, and measures the light quantity of light of each wavelength in visible light, thereby performing the spectral measurement of the measurement position T on the medium A. Is possible.

[Configuration of light source unit]
The light source unit 171 includes a light source 171A and a condensing unit 171B. The light source unit 171 irradiates the light emitted from the light source 171A into the measurement position T of the medium A from the direction normal to the surface of the medium A.
As the light source 171A, a light source capable of emitting light of each wavelength in the visible light range is preferable. As such a light source 171A, for example, a halogen lamp, a xenon lamp, a white LED and the like can be exemplified, and in particular, a white LED which can be easily installed in a limited space in the carriage 13 is preferable. The condensing part 171B is comprised, for example with a condensing lens etc., and condenses the light from the light source 171A on the measurement position T. In FIG. 16, only one lens (condenser lens) is displayed in the condenser portion 171B, but a plurality of lenses may be combined.

[Configuration of light receiving unit and light guiding optical system]
The light receiving unit 173 is disposed on the optical axis of the variable wavelength interference filter 5 and receives light transmitted through the variable wavelength interference filter 5. Then, based on the control of the control unit 15, the light receiving unit 173 outputs a detection signal (current value) corresponding to the amount of received light. The detection signal output by the light receiving unit 173 is input to the control unit 15 via an IV converter (not shown), an amplifier (not shown), and an AD converter (not shown).
The light guiding unit 174 includes a reflecting mirror 174A and a band pass filter 174B.
At the measurement position T, the light guide 174 reflects the light reflected at 45 ° with respect to the surface of the medium A onto the optical axis of the variable wavelength interference filter 5 by the reflecting mirror 174A. The band pass filter 174B transmits light in the visible light range (for example, 380 nm to 720 nm) and cuts ultraviolet light and infrared light. Thus, light in the visible light range is incident on the variable wavelength interference filter 5, and the light receiving section 173 receives light of the wavelength selected by the wavelength variable interference filter 5 in the visible light range.

The circuit unit 175 is electrically connected to the control unit 15, and drives the variable wavelength interference filter 5 based on a command from the control unit 15.
Specifically, the circuit unit 175 sets the mirror gap G to a target wavelength between the first electrode 561 connected to the first connection electrode 565 and the second electrode 562 connected to the second lead electrode 564. A drive circuit 175A is provided which applies a drive voltage to change the gap size accordingly. Here, in the present embodiment, the drive circuit 175A includes a ground circuit 175B, and the first connection electrode 565 is electrically connected to the ground circuit 175B. As a result, the reference potential is applied to the first connection electrode 565, and the charges of the metal films 542 and 552 of the first reflection film 54 and the second reflection film 55 can be released.
In addition, as the circuit unit 175, circuits other than the drive circuit 175A may be provided. For example, in the case where a capacitance detection electrode for detecting the capacitance of the mirror gap G is provided in the mirror area M, a capacitance detection circuit for detecting the capacitance between the capacitance detection electrodes may be provided. In addition, a feedback circuit or the like that performs feedback control of the drive voltage applied from the drive circuit 175A may be provided based on the capacitance detected by the capacitance detection circuit.

[Configuration of control unit]
The control unit 15 is a control unit according to the present invention, and includes an I / F 151, a unit control circuit 152, a memory 153, and a CPU (Central Processing Unit) 154, as shown in FIG. There is.
The I / F 151 inputs print data input from the external device 20 to the CPU 154.
The unit control circuit 152 includes control circuits for controlling the supply unit 11, the transport unit 12, the printing unit 16, the light source 171A, the variable wavelength interference filter 5, the light receiving unit 173, and the carriage moving unit 14, respectively. The operation of each unit is controlled based on the command signal. The control circuit of each unit may be provided separately from the control unit 15 and connected to the control unit 15.

The memory 153 stores various programs for controlling the operation of the printer 10 and various data.
As various data, for example, V-λ data indicating the wavelength of light transmitted through the variable wavelength interference filter 5 with respect to the voltage applied to the electrostatic actuator 56 when controlling the variable wavelength interference filter 5, as print data The printing profile data etc. which memorize | stored the discharge amount of each ink with respect to the contained color data are mentioned. In addition, the light emission characteristic (emission spectrum) of each light source 171A for each wavelength, the light reception characteristic (light reception sensitivity characteristic) for each wavelength of the light receiver 173, or the like may be stored.

  The CPU 154 reads and executes various programs stored in the memory 153 to drive and control the units 11, 12, and 14, print control of the printing unit 16, and measurement control by the spectroscope 17. Drive control of the electro-actuator 56, color measurement processing based on the result of the spectroscopic measurement of the spectroscope 17, correction (update) processing of print profile data, and the like are performed.

[Operation and effect of the fifth embodiment]
The printer 10 according to the present embodiment includes a spectroscope 17 which is an optical module, and the spectroscope 17 includes an optical filter device 600 (variable wavelength interference filter 5) and a circuit unit 175 for driving the variable wavelength interference filter 5. Have. In addition, the circuit portion 175 is provided with a ground circuit 175B that applies a reference potential to the first connection electrode 565.
Therefore, the charges accumulated in the first reflection film 54 and the second reflection film 55 of the variable wavelength interference filter 5 can be released from the first connection electrode 565 to the ground circuit 175 B, and the influence of the charge in the variable wavelength interference filter 5 Can be suppressed. Therefore, there is no need to incorporate a circuit for performing complicated drive control in consideration of the charging of the first reflection film 54 and the second reflection film 55 as the circuit unit 175 for driving the variable wavelength interference filter 5, thus simplifying the configuration. The cost of the spectroscope 17 can be reduced, and hence the cost of the electronic device can also be reduced.

[Modification]
Note that the present invention is not limited to the above-described embodiment, and modifications, improvements, and the like as long as the object of the present invention can be achieved are included in the present invention.

[Modification 1]
In the first embodiment described above, as the shapes of the first through holes 543 and the second through holes 553, the stepped configuration in each layer is illustrated, but the present invention is not limited thereto.
17 to 20 are views showing other examples of the first through holes. 17 to 20 show an example of the first through holes provided in the first reflective film 54, but the same is true for the second through holes formed in the second reflective film 55, as shown here. And explanation is omitted.

  For example, as shown in FIG. 17, the first through hole 544A is a hole having an inner circumferential surface that is substantially parallel to the stacking direction of the oxide film 541 and the metal film 542 constituting the first reflection film 54. It may be Such first through holes 544A can be formed by dry etching using, for example, ion milling. Further, in such dry etching, it is not necessary to individually perform wet etching on each of the layers constituting the first reflective film 54, so that manufacturing efficiency can be further improved.

Further, in the example shown in FIG. 18, the first through hole 544B is formed in a (inner circumferential conical) shape having an inclined surface which is expanded as it is separated from the first substrate 51. In the example shown in FIG. 17, the side surfaces of the respective oxide films 541 and metal films 542 exposed to the first through holes 544A are substantially parallel to the stacking direction. In this case, it is difficult to form the first lead-out electrode 563 on the side surface of each oxide film 541 and each metal film 542, and there is a possibility of disconnection. On the other hand, in the first through hole 544B shown in FIG. 18, the surface exposed to the first through hole 544B of each oxide film 541 and each metal film 542 is an inclined surface, so the first lead electrode 563 is formed. It is easy to do, and it is hard to occur disconnection.
Even in the case of the first through hole 544A shown in FIG. 17, disconnection can be suppressed by filling (filling) the inside of the hole with the electrode material of the first lead electrode 563.

Furthermore, in the first through hole 544C shown in FIG. 19, the hole diameter L2 of the second through hole 542A formed in the metal film 542 is substantially immediately above the metal film 542 (the first substrate 51), substantially the same as in the first embodiment. The hole diameter is smaller than the hole diameter L1 of the first through hole 541A formed in the oxide film 541 adjacent to the side away from On the other hand, the first through holes 541A of the oxide film 541 adjacent immediately below the metal film 542 (the side close to the first substrate 51) have the same hole diameter L1 as the second through holes 542A of the metal film 542 adjacent immediately above. .
In such a configuration, as in the first embodiment, a part of the upper surface (the surface facing the second substrate 52) of each metal film 542 is exposed in the first through hole 544C. The extraction electrode 563 and the metal film 542 can be connected.

Moreover, in the formation of the first through hole 543, although an example in which the formation of the resist pattern and the wet etching are repeated a plurality of times has been shown, the present invention is not limited to this.
For example, a resist having an opening with a hole diameter corresponding to the bottom surface 543 B of the first through hole 543 is formed in the oxide film 541 located on the outermost surface. Thereafter, the oxide film 541 on the outermost surface is wet etched using the metal film 542 immediately below as an etching stopper. Thereafter, the metal film 542 immediately below the oxide film 541 on the outermost surface is wet etched using the oxide film 541 immediately below the metal film 542 as an etching stopper. Thereafter, the second oxide film 541 from the outermost surface is again wet etched. At this time, the oxide film 541 on the outermost surface is side-etched to expose a part of the upper surface of the metal film 542 located immediately below the outermost surface in the first through hole 543. The above process may be repeated to form a first through hole 543 having a step-like shape at each layer position.

In each of the above-described embodiments and the examples shown in FIGS. 17 to 19, the first reflective film 54 is penetrated as the first through hole 543, and the first substrate 51 is the bottom surface 543B of the first through hole 543. Not limited to this. For example, as shown in FIG. 20, it is only necessary to form a first through hole 544D to which the metal film 542 which is a conductive layer of at least one layer of the first reflective film 54 is exposed. That is, when the charge of the metal film 542 at the position farthest from the first substrate 51 among the metal films 542 is removed, the polarization or the like in each layer disposed closer to the first substrate 51 than the metal film 542 is removed. The charging can be effectively suppressed.
Further, as shown in FIG. 20, in the configuration in which the first through holes 541A are provided only in the oxide film 541 disposed on the surface, the wet etching may be performed only once at the time of forming the first through holes 544D. Improve. Furthermore, the upper surface of the metal film 542 immediately below the oxide film 541 on the outermost surface is exposed on the first through holes 544D, so that the disconnection between the first lead electrode 563 and the metal film 542 is also suppressed. Can be released more properly.

[Modification 2]
In each of the above-described embodiments, as the positions of the first through holes 543 and the second through holes 553, the positions overlapping the lead grooves 511 </ b> A are illustrated in plan view, but the present invention is not limited thereto.
For example, the electrode arrangement groove 511 may be used as the formation position of the first through hole 543. Further, although the first lead electrode 563 is illustrated as the first wiring electrode of the present invention, when the first through hole 543 is provided in the electrode arrangement groove 511 as described above, the first electrode 561 is connected to the first through hole 543 It may be used as a first wiring electrode. The second through hole 553 may be provided, for example, in the electrical component unit 560 or the like.
Further, as in the first embodiment, in the case where the first lead electrode 563 and the first connection electrode 565 are connected in a part of the first bonding portion 513, the first through hole 543 or the second Through holes 553 may be provided.
That is, the first through holes 543 and the second through holes 553 may be formed at any positions as long as they are regions other than the mirror region M.

  Moreover, in each said embodiment, although the 1st through hole 543 and the 2nd through hole 553 set it as the structure provided, respectively, it is not limited to this. For example, a plurality of first through holes 543 and a plurality of second through holes 553 may be provided. In this case, at least one or more of the plurality of first through holes 543 may be connected to the first lead electrode 563 or the first electrode 561. In addition, at least one or more of the plurality of second through holes 553 may be connected to the first connection electrode 565.

[Modification 3]
In each of the above embodiments, although the example in which the first electrode 561 and the second electrode 562 which constitute the electrostatic actuator 56 are provided in the wavelength variable interference filter 5 has been described, another electrode may be further provided.
For example, an electrode for detecting capacitance (mirror electrode) may be formed on the mirror area M of the first reflective film 54 and the second reflective film 55. In this case, it is necessary to form a lead-out electrode for input / output of a signal to / from the mirror electrode. Here, in the case where a reflective film is provided only in the mirror region M using lift-off or the like, a step may be generated between the side surface of the reflective film and the first substrate 51 (or the second substrate 52), and the lead electrode may be disconnected. There is. On the other hand, as in the present embodiment, in the configuration in which the reflective film made of the dielectric multilayer film is provided on substantially the entire surface of the substrate (the first substrate 51 and the second substrate 52), There is no need to form an electrode on the side surface, and disconnection of the electrode can be suppressed.

Further, as described above, in the configuration in which the mirror electrode for detecting capacitance is provided in both of the mirror regions M of the first substrate 51 and the second substrate 52, the potential of one of these mirror electrodes For example, it may be 0 V). In such a case, the mirror lead-out electrode connected to the mirror electrode set to the reference potential may be a first wiring electrode (or a second wiring electrode) connected to the through hole.
For example, in the case where the first mirror electrode is disposed in the mirror area M of the first substrate 51 and the second mirror electrode is disposed in the mirror area M of the second substrate 52, the first lead electrode connected to the first mirror electrode A part is connected to the first through hole 543. In the second substrate 52, a second wiring electrode connected to the second through hole 553 and not connected (independent) to the second mirror electrode or the second electrode 562 or the second lead electrode 564 is disposed, The wiring electrode is extended to the electrical component part. Then, the first mirror extraction electrode and the second wiring electrode are made conductive by, for example, being in contact as in the first embodiment or by bump connection as in the second embodiment.

In addition, the mirror electrode may function as an electrode for removing static electricity instead of an electrode for detecting electrostatic capacitance. In this case, for example, the first mirror extraction electrode connected to the first mirror electrode is connected to the first through hole 543. Also, a second mirror extraction electrode connected to the second mirror electrode is connected to the second through hole 553. Then, the first mirror extraction electrode and the second mirror extraction electrode are connected, and the second mirror extraction electrode is extended to the electrical component portion 560.
With such a configuration, the charges accumulated in the metal films 542 and 552 of the first reflection film 54 and the second reflection film 55 and each mirror electrode can be released, and the first reflection film 54 or the second reflection film 55 The electrostatics of the two reflection film 55 can be suitably removed.

[Modification 4]
In the second embodiment, the configuration in which the first lead-out electrode 563 of the protruding tip end surface 514A of the protrusion 514 is connected to the first connection electrode 565 disposed on the bottom surface 553B of the second through hole 553 is illustrated. On the other hand, for example, the first connection electrode 565 formed on the inner circumferential surface 553A of the second through hole 553 is formed of the first lead electrode 563 formed on the side surface continuous with the protruding end surface 514A of the protrusion 514. You may make it conduct by making it contact.

[Modification 5]
In the second embodiment, the protrusion 514 integrally formed with the first substrate 51 is illustrated. Such a protrusion 514 can be formed at the same time as forming the shape of the first substrate 51 by etching. On the other hand, the first substrate 51 and the projecting portion 514 may be configured separately.
The example shown in FIG. 21 is a cross-sectional view showing another example of the connection configuration of the first extraction electrode and the first connection electrode in the second embodiment.
In the example shown in FIG. 21, a protrusion 515 made of an elastic member such as a resin is provided on the first substrate 51, and the first lead electrode 563 is formed to cover the protrusion 515.
In this case, when the first substrate 51 and the second substrate 52 are joined, the protrusion 515 is elastically deformed, whereby the first lead-out electrode 563 can be pressed to the first connection electrode 565 side. Therefore, the first lead electrode 563 and the first connection electrode 565 can be reliably conducted, and the wiring reliability is enhanced.
In the second embodiment, the second substrate 52 may be inclined by the second substrate 52 being pushed in the direction away from the first substrate 51 by the protrusion 515. Therefore, the total dimension of the protrusion dimension of the protrusion 514, the thickness dimension of the first lead electrode 563 and the thickness dimension of the first connection electrode 565 is the depth dimension of the lead groove 511A and the thickness dimension of the bonding film 53. It is necessary to control the thickness dimension of each part of the variable wavelength interference filter 5A with high accuracy so that On the other hand, in the example of FIG. 21, the elastic deformation of the projecting portion 515 which is an elastic member can suppress the inclination of the second substrate 52 due to the projecting portion 515.

In addition, as a structure which improves wiring reliability, it is not limited to the example of FIG. FIG. 22 is a cross-sectional view showing still another example of the connection configuration of the first extraction electrode and the first connection electrode in the second embodiment.
In the example shown in FIG. 22, the protruding portion 514 is integrally provided on the first substrate 51 as in the second embodiment. Then, on the surface of the second substrate 52 opposite to the first substrate 51, a concave portion (diaphragm portion 524) is formed at the position where the projecting portion 514 is formed. In such a configuration, when the first lead-out electrode 563 is pressed against the first connection electrode 565 by the projecting portion 514, the diaphragm portion 524 is displaced, whereby the first lead-out electrode 563 and the first connection electrode 565 are displaced. Can be reliably conducted, and the inclination of the second substrate 52 due to the protrusion 514 can also be suppressed. Although FIG. 22 shows an example in which the diaphragm 524 is provided on the second substrate 52, the first substrate 51 may be provided with the diaphragm.

In the second embodiment, the configuration in which the protrusion 514 is provided on the first substrate 51 is exemplified, but the protrusion may be provided on the second substrate 52 and inserted into the first through hole 543. The protrusion of the present invention may be integrated with the second substrate 52. In this case, as shown in FIG. 21, the protrusion may be made of an elastic member. Further, as shown in FIG. 22, a diaphragm may be provided.
Furthermore, a protrusion may be provided on both the first substrate 51 and the second substrate 52, and the electrodes provided at the contact position may be connected by contacting the protrusions.

[Modification 6]
In the above embodiment, the first through hole 543 is provided in the first reflection film 54 and the second through hole 553 is provided in the second reflection film 55, but only one of them may be provided. Even in this case, the influence of the charging can be reduced as compared with the configuration in which the through holes are not provided in both sides and the charging is not suppressed.

[Modification 7]
In the above embodiment, although the first electrode 561 is set as the reference potential and the drive potential is applied to the second electrode 562, the second electrode 562 is set as the reference potential and the drive potential is applied to the first electrode 561. It is also good. In this case, a first wiring electrode independent of (not connected to) the first lead electrode 563 is separately formed on the first reflection film 54, and is connected to each metal film 542 of the first through hole 543. Further, in the second substrate 52, the second lead electrode 564 or the second electrode 562 is connected to the second through hole 553, and is connected to each metal film 552 of the first through hole 543. Then, the first wiring electrode and the second lead-out electrode 564 are connected using, for example, contact between electrodes as in the first embodiment or bump connection as in the second embodiment.

[Modification 8]
In the above embodiment, the first connection electrode 565 is provided on the second substrate 52 in order to electrically connect the first lead-out electrode 563 of the first substrate 51 to the electrical component portion 560 of the second substrate 52. Electrical components may be provided on each of the second substrates 52 for connection to the outside. In this case, the first lead-out electrode 563 connected to the first through hole 543 is extended to the electric part of the first substrate 51, and the electrode (second wiring electrode) connected to the second through hole 553 is a second substrate It may be extended to the 52 electrical parts.

[Modification 9]
In the fourth embodiment, the configuration of the optical filter device 600 has been illustrated, but the optical filter device 600 is not limited to the shape of the fourth embodiment. For example, the variable wavelength interference filter 5 may be held inside the cylinder of a cylindrical casing.
Moreover, in the fifth embodiment, the printer 10 is illustrated as an example of the electronic device, but the present invention is not limited to this. The electronic apparatus provided with the variable wavelength interference filter 5 may be, for example, a light source device (for example, a laser light source device) that outputs light of a desired wavelength, or a spectral analysis device that analyzes the components of the object to be measured. Alternatively, the light source device or the analysis device may be mounted on a wearable device or the like.

  In addition, the specific structure at the time of implementation of this invention can be suitably changed into another structure etc. in the range which can achieve the objective of this invention.

  5, 5A, 5B: variable wavelength interference filter, 10: printer (electronic equipment), 15: control unit (control unit), 17: spectroscope (optical module), 51: first substrate, 52: second substrate, 53 ... Bonding film, 54 ... First reflection film, 55 ... Second reflection film, 56 ... Electrostatic actuator, 514, 515 ... Protrusion, 514 A ... Projection tip surface, 521 ... Movable part, 522 ... Holding part, 523 ... Substrate Outer peripheral portion 524: diaphragm portion 541: oxide film (metal oxide film; insulating layer) 541A: first through hole 542: metal film (conductive layer) 542A: second through hole 543, 544A, 544B, 544C, 544D: first through hole, 543A: inner circumferential surface of hole, 543B: bottom surface, 551: oxide film (metal oxide film; insulating layer), 552: metal film (conductive layer), 553: second through hole, 5 3A: inner surface of hole, 553B: bottom surface, 561: first electrode, 562: second electrode, 563: first lead electrode (first wiring electrode), 563A: electrode connection portion, 564: second lead electrode, 565 ... first connection electrode (second wiring electrode), 565 A ... electrode connection portion, 600 ... optical filter device, 610 ... housing, G ... mirror gap, L 1 ... hole diameter of first through hole, L 2 ... of second through hole Pore diameter, M: mirror area, N: outer area.

Claims (10)

A first substrate,
A first reflective film provided over one surface of the first substrate;
A second reflective film which overlaps with the first reflective film at least in a predetermined mirror region in a plan view of the first substrate when viewed from the thickness direction, and which is disposed with a gap to the first reflective film;
A first wiring electrode provided on the first reflective film;
The first reflective film is a laminate in which insulating layers and conductive layers are alternately stacked, and is provided on a part of the first reflective film in the stacking direction of the insulating layer and the conductive layer, and at least A first through hole is provided to expose one of the conductive layers,
An interference filter characterized in that the first wiring electrode is connected to the first through hole and conducted to the conductive layer exposed from the first through hole. In the interference filter according to claim 1,
The first through hole is provided in the first through hole provided in the insulating layer, and the conductive layer in contact with the first substrate side of the insulating layer, and the second through hole communicated with the first through hole Including and
An interference filter characterized in that the second through hole is located inside the first through hole in the plan view. In the interference filter according to claim 1 or 2,
A second substrate facing the first substrate,
The second reflective film is a stacked body provided over the surface of the second substrate facing the first substrate, and an insulating layer and a conductive layer are stacked, and the second reflective film is formed on a part of the second reflective film. A second through hole is provided along the stacking direction of the insulating layer and the conductive layer, and at least one of the conductive layers is exposed.
An interference filter characterized in that a second wiring electrode connected to the second through hole and conducting to the conductive layer exposed from the second through hole is provided on the second reflective film. In the interference filter according to claim 3,
The projection includes a protrusion which protrudes from the first substrate toward the second substrate and is inserted into the second through hole at a position overlapping the second through hole in the plan view.
The first wiring electrode is provided from above the first reflective film to the protruding tip surface of the protruding portion,
A part of the second wiring electrode is extended on a second bottom surface of the second through hole facing the first substrate, and is in contact with the first wiring electrode provided on the protruding tip surface. Interference filter. In the interference filter according to claim 4,
The interference filter according to claim 1, wherein the protrusion protrudes from a first bottom surface facing the second substrate of the first through hole toward the second substrate. The interference filter according to any one of claims 1 to 5,
An interference filter characterized in that particles having an electrical resistance value smaller than the electrical resistance value of the conductive layer are doped in a region other than the mirror region of the conductive layer. An interference filter according to any one of claims 1 to 6;
A housing for accommodating the interference filter;
An optical filter device comprising: An interference filter according to any one of claims 1 to 6;
A circuit unit for driving the interference filter;
An optical module comprising: In the optical module according to claim 8,
The optical module, wherein the circuit unit includes a ground circuit that sets the first wiring electrode to a predetermined reference potential. An interference filter according to any one of claims 1 to 6;
A control unit that controls the interference filter;
An electronic device comprising:

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