JP2019067985A5 - - Google Patents

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Publication number
JP2019067985A5
JP2019067985A5 JP2017194109A JP2017194109A JP2019067985A5 JP 2019067985 A5 JP2019067985 A5 JP 2019067985A5 JP 2017194109 A JP2017194109 A JP 2017194109A JP 2017194109 A JP2017194109 A JP 2017194109A JP 2019067985 A5 JP2019067985 A5 JP 2019067985A5
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Japan
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low resistance
resistance region
semiconductor film
manufacturing
region
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JP2017194109A
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Japanese (ja)
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JP2019067985A (en
JP6732713B2 (en
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Priority to JP2017194109A priority Critical patent/JP6732713B2/en
Priority claimed from JP2017194109A external-priority patent/JP6732713B2/en
Priority to CN201711444009.1A priority patent/CN108305874B/en
Priority to US15/863,009 priority patent/US10431603B2/en
Publication of JP2019067985A publication Critical patent/JP2019067985A/en
Publication of JP2019067985A5 publication Critical patent/JP2019067985A5/ja
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図１１は、半導体装置１０２を製造する一工程を表している。半導体装置１０２の製造方法では、フォトレジストＰｒ１，Ｐｒ２，Ｐｒ３を用いて、第２絶縁膜１６のパターニングを行う際に半導体膜１５（低抵抗領域１５ｂ−１）のエッチングを調整すればよい。過剰なエッチングがなされないようにすることで、低抵抗領域１５ｂ−１の半導体膜１５が、第２領域１０−２（低抵抗領域１５ｂ−２）の半導体膜１５と同じ厚みｔで形成される。


FIG. 11 shows one process for manufacturing the semiconductor device 102. In the method for manufacturing the semiconductor device 102 , the etching of the semiconductor film 15 (low resistance region 15b-1) may be adjusted when patterning the second insulating film 16 using the photoresists Pr1, Pr2, and Pr3. By preventing excessive etching, the semiconductor film 15 in the low resistance region 15b-1 is formed with the same thickness t as the semiconductor film 15 in the second region 10-2 (low resistance region 15b-2). .


JP2017194109A 2017-01-12 2017-10-04 Semiconductor device and display device Active JP6732713B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017194109A JP6732713B2 (en) 2017-10-04 2017-10-04 Semiconductor device and display device
CN201711444009.1A CN108305874B (en) 2017-01-12 2017-12-27 Semiconductor device with a plurality of semiconductor chips
US15/863,009 US10431603B2 (en) 2017-01-12 2018-01-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017194109A JP6732713B2 (en) 2017-10-04 2017-10-04 Semiconductor device and display device

Publications (3)

Publication Number Publication Date
JP2019067985A JP2019067985A (en) 2019-04-25
JP2019067985A5 true JP2019067985A5 (en) 2019-09-19
JP6732713B2 JP6732713B2 (en) 2020-07-29

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JP2017194109A Active JP6732713B2 (en) 2017-01-12 2017-10-04 Semiconductor device and display device

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JP (1) JP6732713B2 (en)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150198A (en) * 1996-11-18 1998-06-02 Mitsubishi Electric Corp Thin film transistor and its manufacture
JP4092851B2 (en) * 2000-04-19 2008-05-28 セイコーエプソン株式会社 Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus
JP4731718B2 (en) * 2001-04-27 2011-07-27 株式会社半導体エネルギー研究所 Display device
JP4429576B2 (en) * 2001-09-10 2010-03-10 株式会社半導体エネルギー研究所 Semiconductor device
JP2004363300A (en) * 2003-06-04 2004-12-24 Sharp Corp Liquid crystal display
JP2007334317A (en) * 2006-05-16 2007-12-27 Semiconductor Energy Lab Co Ltd Liquid crystal display device and semiconductor device
JP2011221119A (en) * 2010-04-06 2011-11-04 Seiko Epson Corp Electro-optic device, electronic equipment, and manufacturing method of electro-optic device
US20120319113A1 (en) * 2011-06-17 2012-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9099560B2 (en) * 2012-01-20 2015-08-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6506545B2 (en) * 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 Semiconductor device
US9443876B2 (en) * 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
US9640669B2 (en) * 2014-03-13 2017-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic appliance including the semiconductor device, the display device, and the display module

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