JP2019062067A - Method for manufacturing organic semiconductor, and light-irradiation device - Google Patents

Abstract

To form, on a substrate, an organic semiconductor to make a semiconductor device as a crystal of good crystallinity.SOLUTION: A method for manufacturing an organic semiconductor according to the present invention comprises the steps of: forming a pattern on a substrate by a liquid containing a material of the organic semiconductor (step S302); and applying a light beam to the coated liquid to crystallize the organic semiconductor (step S303). In the method, the following steps are executed on the continuous pattern at least once, thereby crystallizing the whole pattern: the first step of applying a light beam to, as a target region, a primary irradiation region which is a partial region including a peripheral edge of the pattern; and then, the second step of applying a light beam to, as a target region, a secondary irradiation region including or adjacent to a boundary of an irradiated region subjected to light beam irradiation, and an unirradiated region in the pattern.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a manufacturing technology of an organic semiconductor, and more particularly to a technology of improving the crystallinity of an organic semiconductor used as a semiconductor element.

  For example, for the purpose of manufacturing a display device, a touch panel device, a flexible sensor, etc., a technique for forming a thin film semiconductor element such as a thin film transistor on a surface of a substrate such as a glass substrate or a resin substrate including a flexible sheet or film is studied. ing. Particularly in recent years, organic semiconductors have attracted attention as materials for such thin film semiconductor devices from the viewpoint of remarkable improvement of their performance and production techniques and creation of devices using printing techniques depending on the materials. . Furthermore, miniaturization (for example, the line width of the organic semiconductor pattern is 20 μm or less) for performance improvement is in progress.

  Similar to inorganic semiconductor materials, it is known that the crystallinity of organic semiconductor materials also affects the device performance. For example, the mobility of carriers is a high value in a single crystal organic semiconductor material, and the carrier mobility is also reduced as the crystallinity is deteriorated. For this reason, in order to manufacture a semiconductor device with good performance, it is necessary to make the crystallinity of the organic semiconductor material good. Ideally, one semiconductor element is preferably composed of a single crystal organic semiconductor.

  For example, the technology described in Patent Document 1 is a technology for manufacturing a large-area organic semiconductor single crystal. This technology forms a concave pattern having a narrow seed crystal portion and a crystal growth portion whose width continuously extends on the substrate, and supplies the liquid containing the organic semiconductor material from the seed crystal portion toward the crystal growth portion. By sequentially advancing and drying, it is intended to obtain a large area single crystal.

  Further, the technique of Patent Document 2 is to crystallize a liquid film containing an organic semiconductor material formed on a substrate by irradiating a laser beam, and in order to improve the crystallinity of the thin film, Laser light is scanned along one scanning direction. In the technique of Patent Document 2, laser light irradiation is performed for the purpose of giving a suitable amount of heat to the liquid film and drying it for crystallization, and single crystallization of the organic semiconductor is regarded as an essential object. Absent.

JP, 2014-216568, A JP, 2014-179371, A

  The above-mentioned prior art manufactures an organic semiconductor thin film having a relatively large area. On the other hand, for example, in the manufacture of display devices and the like, a large number of fine semiconductor elements are formed on one substrate. The above-mentioned prior art is not suitable for the purpose of obtaining good crystallinity in each of such semiconductor devices. Although patent document 2 mentions selectively forming a liquid film only to a required area | region, irradiating light, etc., it does not describe about the specific manufacturing method. Thus, in the case where a large number of semiconductor elements are formed on a substrate, a technique capable of manufacturing each organic semiconductor with excellent crystallinity has not been established until now. In addition, the organic semiconductor element formed in a flexible film causes expansion and contraction of the film during transport and processes in the middle of production, etc., and the pattern of the organic semiconductor is displaced compared with the design data, making accurate laser irradiation difficult It has become.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a technique capable of forming an organic semiconductor constituting a semiconductor element on a substrate as a crystalline having good crystallinity.

  In order to achieve the above object, an aspect of a method of manufacturing an organic semiconductor according to the present invention includes the steps of: forming a pattern with a liquid containing an organic semiconductor material on a substrate; and applying a light beam to the coated liquid And irradiation to crystallize the organic semiconductor. Here, the irradiation of the light beam is performed according to the pattern of the substrate by executing intermittent emission of the light beam and controlling an incident position of the emitted light beam to the substrate. It is performed by the irradiation apparatus which can irradiate the said light beam selectively to the irradiation object area | region specified by irradiation data.

  And the said irradiation apparatus performed the 1st process of irradiating the said light beam by making the primary irradiation area | region which is a partial area | region including a peripheral part among the said patterns into the said irradiation object area | region about one continuous said pattern. Second, the light beam is irradiated with the secondary irradiation area including the boundary between the irradiated area irradiated with the light beam and the unirradiated area in the pattern or being adjacent to the boundary as the irradiation target area; By performing the process at least once, the entire pattern is crystallized.

  In the invention configured as described above, the light beam is first irradiated to the primary irradiation region which is a partial region including the peripheral portion in the pattern formed of the liquid containing the organic semiconductor material. As a result, minute crystals of the organic semiconductor are generated in part of the pattern (first step). Then, the light beam is irradiated to the secondary irradiation area including the boundary between the irradiated area already irradiated with the light beam and the non-irradiated area not irradiated with the light beam or adjacent to the boundary Step 2).

  At this time, large crystal grains can be obtained by the progress of crystallization with the crystal of the organic semiconductor crystallized by irradiation with the light beam as a nucleus. Thus, a large crystal can be grown on the substrate over the entire pattern by sequentially irradiating the entire pattern with a light beam to advance crystallization. That is, according to the present invention, an organic semiconductor can be manufactured as a crystal with good crystallinity on a substrate.

  In one aspect of the light irradiation apparatus according to the present invention, in order to achieve the above object, there is provided a substrate holding portion for holding a substrate having a pattern formed of a liquid containing an organic semiconductor material, and intermittent light beams. A light irradiator that performs adjustment of an incident position of the light beam emitted and emitted onto the substrate, and controlling the light irradiator based on irradiation data according to the pattern, the irradiation data of the substrates And a controller configured to selectively irradiate the light beam to the irradiation target area specified by Then, for the one continuous pattern, the light beam is irradiated with the primary irradiation area, which is a partial area including the peripheral portion of the pattern, as the irradiation target area, and then the irradiation of the light beam in the pattern is performed. The entire pattern is implemented by performing the irradiation of the light beam at least once with the secondary irradiation area including the boundary between the irradiated area and the non-irradiated area or being adjacent to the boundary being the irradiation target area. Let it crystallize.

  The invention configured as described above has a configuration suitable for implementing the above-described method of manufacturing an organic semiconductor. That is, by performing the crystallization process of the organic semiconductor using the light irradiation apparatus according to the present invention, the organic semiconductor can be manufactured as a crystal with good crystallinity on the substrate.

  As described above, according to the present invention, in the pattern formed of the liquid containing the organic semiconductor material, a partial region including the peripheral portion is first irradiated with light to start crystallization, and the irradiated region and the non-irradiated region are Since light is sequentially irradiated to a region including or adjacent to the boundary with the irradiation region to advance crystallization, an organic semiconductor with good crystallinity can be manufactured on the substrate.

It is a figure which shows the structural example of the semiconductor element which can apply the manufacturing method of the organic semiconductor which concerns on this invention. It is a flowchart which illustrates the manufacturing process of this semiconductor element. It is a flowchart which shows the manufacturing method of an organic-semiconductor layer. It is a schematic diagram which shows the example in which a several semiconductor element is provided in a board | substrate. It is a figure which shows the main structures of one Embodiment of the light irradiation apparatus which concerns on this invention. It is a figure which shows the aspect of light irradiation control in this light irradiation apparatus. It is a figure which illustrates the relationship between the pattern of the organic semiconductor on a substrate, and a pixel. It is a flowchart which shows light irradiation processing. It is a 1st figure which shows the irradiation pattern of the light irradiated to a board | substrate, and its transition. It is a 2nd figure which shows the irradiation pattern of the light irradiated to a board | substrate, and its transition. It is a 3rd figure which shows the irradiation pattern of the light irradiated to a board | substrate, and its transition. It is a 4th figure which shows the irradiation pattern of the light irradiated to a board | substrate, and its transition.

  FIG. 1 is a view showing a configuration example of a semiconductor element to which the method for manufacturing an organic semiconductor according to the present invention can be applied. FIG. 2 is a flowchart illustrating the manufacturing process of this semiconductor device. As will be described in detail later, the method for producing an organic semiconductor of the present invention can be implemented, for example, as part of a production process for producing the organic thin film transistor illustrated in FIG.

  The organic thin film transistor TR can be manufactured, for example, as follows. As shown in FIG. 1A, the source electrode Es and the drain electrode Ed are formed apart from each other on the surface of the substrate SB cleaned in advance (step S101) (step S102). As the substrate SB, it is possible to use, for example, an inorganic semiconductor substrate such as silicon, a glass substrate, a resin substrate including a flexible sheet or film, or a sheet-like substrate including transition such as paper. Moreover, the board | substrate with which the insulating layer was formed in the surface of the flat plate which has electroconductivity, such as a metal plate, may be used.

  The method of forming the source electrode Es and the drain electrode Ed is arbitrary. For example, a method of laminating a metal which is an electrode material on the substrate SB by vacuum evaporation, sputtering film formation, plating or the like can be used. Alternatively, the metal film previously formed on the entire surface of the substrate SB may be partially removed by etching. Alternatively, for example, a method may be employed in which a layer of a liquid containing an electrode material is formed on the substrate SB by coating or printing, and the layer is dried and cured.

  Next, as shown in FIG. 1B, a layer OS of an organic semiconductor is formed to cover the surfaces of the electrodes Es and Ed (step S103). Although various methods can be applied as a method of forming the organic semiconductor layer OS, in the present invention, a liquid containing an organic semiconductor material is partially applied to the region of the substrate SB where the organic semiconductor layer is to be formed. And the method of crystallizing this by light irradiation is used. The specific processing content will be described later.

  Next, as shown in FIG. 1C, a gate insulating film IS covering the surface of the organic semiconductor layer OS is formed (step S104). The gate insulating film IS can be formed, for example, by applying a liquid containing an insulator material to the surface of the organic semiconductor layer OS and drying and curing the liquid. Further, for example, a method of forming an insulating film such as a metal oxide by CVD (Chemical Vapor Deposition) may be used.

  Next, as shown in FIG. 1D, the gate electrode Eg is formed on the surface of the gate insulating film IS (step S105). The gate electrode Eg can be formed by the same method as the source electrode Es or the like, but the manufacturing method may be different between step S102 and step S105.

  Thus, the channel Ch of the organic semiconductor is formed between the source electrode Es and the drain electrode Ed, and the organic thin film transistor TR provided with the gate electrode Eg opposed to the channel Ch via the gate insulating film IS is formed. Ru. The organic thin film transistor TR thus formed is subjected to appropriate post-processing such as connection of additional wiring and sealing treatment (step S106), whereby the organic thin film transistor TR as a semiconductor element is completed.

  The organic semiconductor material to be used is not particularly limited, and various materials which have been put into practical use can be applied. In particular, those having the property of being crystallized and cured by heating by light irradiation or photochemical reaction are preferable.

  Here, the semiconductor element formed on the substrate SB is a single organic thin film transistor TR, but in practice, a large number of semiconductor elements are formed on one substrate SB. For example, in an organic EL display device or a liquid crystal display device, millions of thin film transistors are formed on one substrate as switching elements. In this case, for example, the gate insulating film IS may be continuous between a plurality of elements.

  FIG. 3 is a flowchart showing a method of manufacturing an organic semiconductor layer. More specifically, FIG. 3 (a) is a flowchart describing in more detail the processing contents of step S103 of FIG. 2, and FIG. 3 (b) is a view schematically showing the state of the element in the processing process. is there. When forming the organic semiconductor layer OS on the substrate SB on which the source electrode Es and the drain electrode Ed are formed, a wet process for forming a self-assembled monolayer (SAM) on the electrode surface is performed (Step S201). This is a process for reforming the electrode surface to reduce the electrical resistance at the interface with the organic semiconductor layer OS. There are various known techniques for such SAM processing, which can be appropriately selected and used, and therefore the description thereof is omitted here.

  Next, a liquid containing an organic semiconductor material is partially attached to the surface of the substrate SB so as to cover the electrodes Es and Ed, whereby a pattern of the organic semiconductor material is formed (step S202). This pattern corresponds to the shape of the semiconductor element to be formed. Various methods can be adopted as a method of forming a pattern. For example, as shown in the upper and middle parts of FIG. 3B, the pattern PT can be transferred from the blanket BL to the substrate SB by pressing the blanket BL carrying the pattern PT of the organic semiconductor material against the substrate SB.

  As a method for supporting the pattern PT on the blanket BL, it is possible to use a printing technique using a relief printing plate, an intaglio printing plate or a lithographic printing plate. Alternatively, the pattern PT may be transferred from the relief printing plate or the lithography directly to the substrate SB. Besides, it is possible to form the pattern PT on the substrate SB using various methods such as silk screen printing, ink jet printing and the like.

  When the pattern PT is formed on the substrate SB, the pattern PT is liquid. By irradiating this with light of an appropriate wavelength according to the material, the organic semiconductor material in the liquid crystallizes and the solvent evaporates, and the organic semiconductor layer OS is formed (step S203). At this time, in order to make the crystallinity of the organic semiconductor layer OS good and ideally to make the whole organic semiconductor layer OS a single crystal, the light beam L has a pattern PT as shown in the lower part of FIG. Are scanned from one end to the other. Thereby, crystal growth proceeds from one end to the other end of the pattern PT. That is, by the scanning of the light beam L, the crystallized region Rc of the pattern PT is grown toward the liquid region Rl maintaining the liquid state, and finally the entire pattern PT is crystallized.

  If a single semiconductor element is formed on the substrate SB, as shown in the lower part of FIG. 3B, the light beam L is scanned at a speed corresponding to the crystal growth speed with respect to the pattern PT. It is possible to However, as described above, in an actual device, a large number of semiconductor elements are provided on one substrate. Therefore, such a long process is not realistic.

  FIG. 4 is a schematic view showing an example in which a plurality of semiconductor elements are provided on a substrate. More specifically, FIG. 4A shows an example in which a plurality of transistors are arranged on a substrate, and FIG. 4B is a perspective view showing the shape of each transistor. In FIG. 4, in order to explain the manufacturing process of the organic semiconductor layer OS, the outer shape of the transistor TR at the time when the organic semiconductor layer OS is stacked on the electrodes Es and Ed is not a finished product of the organic thin film transistor TR. It shows. Therefore, a cross-sectional view taken along line A-A in FIGS. 4A and 4B corresponds to FIG. 1B.

  For example, in a display device such as an organic EL display or a liquid crystal display, as shown in FIG. 4A, a large number of transistors TR are arranged in a matrix on one substrate SB. Here, the transistors TR having the same shape and pointing in the same direction are arranged at equal pitches, but the actual device is not limited to this, and elements having different sizes, shapes, arrangement directions, etc. may be mixed. The manufacturing method of the organic semiconductor using the light irradiation apparatus shown below can be easily modified in accordance with various element shapes, and can cope with the case where non-identical elements are mixed.

  FIG. 5 is a view showing the main configuration of an embodiment of the light irradiation apparatus according to the present invention. The light irradiation apparatus 1 is an apparatus for crystallizing the organic semiconductor by irradiating the substrate SB on which the pattern PT is formed with the liquid containing the organic semiconductor material as described above. The light irradiation device 1 includes a light source unit 11, a light modulation unit 13, a projection optical system 15, a stage 17, and a control unit 20 that controls the operation of these. In FIG. 5, the horizontal plane is taken as the XY plane, and the vertically upward direction is taken as the Z direction. Further, the rotation direction around the Z axis is taken as the θ direction.

  The light source unit 11 includes, for example, a laser light source such as a semiconductor laser or a gas laser, and emits the laser light L1 to the light modulation unit 13. When the organic semiconductor material is crystallized by heat, the wavelength of the laser beam L1 is in the infrared band. When the organic semiconductor material is to be crystallized by ultraviolet light, the laser light L1 has an ultraviolet wavelength. The light source is not limited to the laser light source, and may be, for example, a lamp light source. The light source unit 11 is controlled by the light source control unit 21 of the control unit 20, and intermittently emits the laser light L1 in accordance with a control command from the light source control unit 21.

The light modulator 13 modulates the laser light L1 incident from the light source unit 11 and outputs the modulated light L3. More specifically, the laser light L1 is modulated by an appropriate light modulation device to turn on / off the light output from the light modulator 13 and to change its emission direction. As the light modulation device, various known techniques, for example, one using a galvano mirror, MEMS (Micro MEMS such as a digital micro mirror device (Digital Micro mirror Device)
Mechanical Electro Systems devices, grating light valves (grating)
Besides controlling the light emission direction such as a light valve; GLV (registered trademark) device, for example, a device that generates a plurality of beams from one beam using a non-linear optical crystal is applicable. These may be combined appropriately. The on / off of the light output from the light modulator 13 and the emission direction thereof are controlled by the modulation control unit 23 of the control unit 20. The modulated light L 3 output from the light modulator 13 is incident on the projection optical system 15.

  The projection optical system 15 includes several optical elements such as a lens, and converges the modulated light L3 incident from the light modulator 13 and directs the light beam toward the substrate SB placed on the lower stage 17. Fire as L5. The projection optical system 15 has a focus adjustment mechanism (not shown), and the focus adjustment unit 25 provided in the control unit 20 drives the focus adjustment mechanism to converge the light beam L5 on the surface (upper surface) of the substrate SB. Do.

  The upper surface of the stage 17 is a flat surface larger than the flat size of the substrate SB, and holds the substrate SB placed on the flat surface. A heater 171 is incorporated in the stage 17, and the heater 171 is controlled by a heater control unit 271 of the control unit 20. Under the control of the heater control unit 271, the upper surface of the stage 17 is heated to a predetermined temperature. Thereby, the substrate SB placed on the stage 17 is heated.

  The stage 17 is supported by a stage moving mechanism 172. The stage moving mechanism 172 is controlled by the stage control unit 272 of the control unit 20, and moves the stage 17 in the XYθ direction according to a control command from the stage control unit 272.

  By combining the position adjustment of the light beam in the XY directions by the light modulation unit 13 and the movement of the stage 17 in the XYθ direction by the stage moving mechanism 172, the light beam L5 is moved to any position on the substrate SB on the stage 17. It can be made incident.

  In the control unit 20, each functional block such as the light source control unit 21, the modulation control unit 23, the focus adjustment unit 25, the heater control unit 271, and the stage control unit 272 may be realized by dedicated hardware. A general-purpose central processing unit (CPU) having an arithmetic processor may be realized as software by executing a prepared program.

  The control unit 20 is further provided with a memory 28 for storing irradiation data referred to by the light source control unit 21, the modulation control unit 23 and the stage control unit 272. As described later, the light irradiation device 1 selectively irradiates a light beam to the pattern PT formed on the substrate SB and the periphery thereof. It is the irradiation data that describes the information that indicates at which position of the substrate SB the light beam is incident and by adjusting the on / off of the light beam emission and its incident position based on the irradiation data by each part of the device. Selective light irradiation to the pattern PT and its surroundings is realized.

  In order to make this possible, the irradiation data is determined based on information representing the position and shape of the pattern PT of the organic semiconductor formed on the substrate SB. These pieces of information are specified at the time of design of the semiconductor element, and thus can be grasped from the design data. Hereinafter, although the aspect of light irradiation to the pattern PT in the light irradiation device 1 will be described, in other words, the irradiation data may be created so that the light irradiation is realized in such a mode. In addition, in order to associate the irradiation data with the position of the pattern PT of the organic semiconductor of the substrate SB and appropriately irradiate the light to the pattern PT, an alignment mark is formed on the substrate SB and the alignment mark is read by a camera or the like. The relative position between the light irradiation reference position and the substrate reference position may be adjusted.

  FIG. 6 is a view showing an aspect of light irradiation control in this light irradiation device. As shown in FIG. 6, a large number of minute pixels arranged in a two-dimensional matrix in the X direction and the Y direction are allocated to each position of the substrate SB placed on the stage 17. The light irradiation device 1 can perform on / off of the light beam L5 and adjustment of the incident position thereof in this pixel unit. For example, when the pixel is to be irradiated with light while sequentially moving the light incident position determined by the light modulator 13 and the projection optical system 15 in the X direction and the Y direction on the substrate SB in the pixel unit The light beam L1 is emitted from the light source unit 11 only.

  In this case, the light irradiation device 1 scans the substrate SB in the X and Y directions with the light beam L5 while intermittently emitting the light beam L5 according to the shape of the region to be irradiated with light to the substrate SB. become. By repeating this operation as necessary, the substrate SB can be scanned a plurality of times with the light beam L5. That is, each pixel on the substrate SB is provided with a plurality of opportunities to receive light irradiation.

  The illumination data indicates at which timing the light beam L5 is to be incident on all the pixels assigned to the substrate SB. As such light irradiation control, it is possible to use, for example, a technology that has been put into practical use in an exposure apparatus used in photolithography technology.

  FIG. 7 is a diagram illustrating the relationship between the pattern of the organic semiconductor and the pixel on the substrate. The light in this embodiment is taken as an example in the case where the relationship between the position of the pattern PT of the organic semiconductor layer OS to be formed on the substrate SB and the position of the pixel allocated on the substrate SB is represented as shown in FIG. The processing content of irradiation and its specific example will be described.

  FIG. 8 is a flowchart showing the light irradiation process. This process is executed by the control unit 20 executing a program stored in advance in the memory 28 to cause each unit of the apparatus to perform a predetermined operation. The substrate SB on which the pattern PT of the liquid containing the organic semiconductor material is formed is previously mounted on the stage 17, and the focus of the projection optical system 15 is focused on the surface of the substrate SB. The relative position between the pattern PT of the organic semiconductor on the substrate SB and the irradiation position of the light beam designated by the irradiation data on the substrate SB is adjusted using an alignment mark or the like.

  In this light irradiation process, when the light beam scans the entire substrate SB once, an opportunity of one light irradiation is generated for each of the plurality of patterns PT disposed on the substrate SB. Then, the scanning of the light beam with respect to the substrate SB is performed a plurality of times, thereby creating an opportunity for a plurality of light irradiations for each pattern PT. When the light beam L5 is actually emitted from the projection optical system 15 among those opportunities, the pattern PT is irradiated with light.

  The illumination pattern representing the arrangement of the pixels that emit light and the pixels that do not emit light in one scan is sequentially changed according to the number of scans. In FIG. 9 to FIG. 12 described later, although the irradiation pattern and its transition to one of the patterns PT formed in large numbers on the substrate SB are shown, an irradiation pattern corresponding to the entire substrate SB is actually prepared. . The data representing the radiation pattern in each scan is the radiation data described above.

  In the light irradiation process, as shown in FIG. 8, an internal parameter N in the process is set to an initial value 1 (step S301). The parameter N represents the number of scans of the light beam scan that is subsequently performed. Subsequently, irradiation data representing the irradiation pattern in the Nth optical scan is read from the memory 28 (step S302). The scan performed with the parameter N set to 1 is the first light scan.

  Then, based on the read irradiation data, the light source unit 11, the light modulation unit 13, and the stage moving mechanism 172 operate to perform the first scan with the light beam L5 (step S303). Thereby, irradiation of the light beam is selectively performed on the region specified by the irradiation pattern in the substrate SB.

  Next, the internal parameter N is compared with a predetermined value Nmax corresponding to the substrate SB (step S304). The value Nmax corresponds to the maximum number of scans required to perform light irradiation necessary for all of the patterns PT formed on the substrate SB. If the parameter N has reached the maximum number of scans Nmax (YES in step S304), it means that the light irradiation has ended for all the patterns PT formed on the substrate SB. Therefore, the process ends at this time.

  On the other hand, if the parameter N has not reached the maximum number of times of scanning Nmax (NO in step S304), it means that the pattern PT whose light irradiation to the whole is not completed remains. Therefore, the value of the parameter N is incremented by one (step S305), and the process returns to step S102. In this way, the second, third,... Scans are respectively executed with the irradiation patterns prepared corresponding to the respective times as necessary. It is preferable that the start timing of each scan be in accordance with a fixed cycle. When the required number of scans is completed, the light irradiation process is ended.

  FIGS. 9 to 12 are diagrams showing an example of the irradiation pattern of light irradiated to the substrate in this process and the transition thereof. In the following description, among the surface areas of the substrate SB and the structure formed on the substrate, an area which has already been irradiated with the light beam is referred to as an “irradiated area” and is indicated by relatively rough oblique lines in the drawing. Moreover, the area | region which has not received irradiation yet is called "non-irradiated area | region", and is represented by a white background in the figure. In addition, an area to be irradiated with the light beam collectively in each scan is referred to as an “area to be irradiated” and is indicated by relatively fine oblique lines in the drawing.

  FIG. 9 is a view showing an irradiation pattern in the case where the relationship with the position of the pixel allocated on the substrate SB is represented as shown in FIG. The illumination pattern in the first scan is shown in FIG. As indicated by hatching, in the first scan, light irradiation is performed on one pixel including the peripheral portion of the pattern PT of the organic semiconductor. That is, the region R11 occupied by this pixel is the irradiation target region in the first scan. Hereinafter, this region R11 is referred to as a "primary irradiation region". In this example, the position of the pixel including the upper left corner of the peripheral portion of the rectangular pattern PT is taken as the primary irradiation region R11.

  The primary irradiation region R11 is a minute partial region including the peripheral portion of the pattern PT. By irradiating the light beam first to this area, the liquid forming the pattern PT is locally heated in this area, and crystallization of the organic semiconductor starts. It is preferable that the primary irradiation region R11 be as small as possible in order to avoid the onset of crystallization at a plurality of locations in a wide region. This requirement is satisfied by setting the area for one pixel which is the minimum size that can be realized as the primary irradiation area R11.

  If the substrate SB is preheated by the stage 17 incorporating the heater 172, crystallization is further promoted. In order to prevent crystallization from being initiated by preheating, it is desirable that the preheating temperature be lower than the crystal transition temperature of the organic semiconductor material.

  Since the irradiation area is small, the crystals at this time are minute. In other words, in order to start crystallization from such a minute region, the primary radiation region R11 is not included in the entire pattern PT, that is, at the position of the pixel including the peripheral portion of the pattern PT. It is set. And at this time, most of the other parts of the pattern PT have not been crystallized yet. Thus, in the first scan, crystallization is started only in a minute partial region of the pattern PT. In the second and subsequent scans, single crystallization is achieved by sequentially growing crystals using the small crystals thus formed as nuclei.

  When the scanning of the light beam is performed by moving the beam in a predetermined direction (for example, the X direction), in the primary irradiation region R11, among the pixels including the peripheral portion of the pattern PT, the one on the most upstream side in the scanning direction It is desirable to be set at the occupied position. In this way, it is possible to continuously apply the light beam to the irradiation target area set at the position of the pixel which is continuous along the scanning direction in the subsequent scanning described below. Also, crystal growth can be advanced along the scanning direction of the light beam.

The illumination pattern in the second scan is shown in FIG. Here, a region R11 which has been irradiated with light in the first scan is indicated by rough hatching. On the other hand, it is a region R12 indicated by fine hatching to be irradiated with light in the second scan. This area R12 is
(1) No light irradiation yet
(2) At least a part is included in the pattern PT
(3) Adjacent to the area irradiated with light by the previous light irradiation,
Is an area occupied by all the pixels corresponding to the condition of In this example, a pixel adjacent to the right side of the area R11 that has been irradiated with light in the first scan, a pixel below the area R11, and a pixel adjacent to the area directly below the area R11 correspond. In addition, the area | region which shares only the area | region and vertex which already received light irradiation shall also be included in the concept of "adjacent" here.

  The second light irradiation is performed with the region R12 occupied by these pixels as the irradiation target region. The irradiation target area R12 is an area adjacent to all the boundaries between the irradiated area R11 that has been irradiated with light in the first scan and the other non-irradiated areas in the pattern PT. Thereby, crystallization of the organic semiconductor proceeds in the region, but crystals are already formed in the adjacent region R11. Therefore, it is expected that crystal growth with this nucleus proceeds and large crystal grains grow. In this example, crystal growth proceeds from the upper left corner of the pattern PT to the right and downward.

  Note that the irradiation target area in the second and subsequent scans is referred to as a "secondary irradiation area" in the present specification. This is because the primary irradiation area to which light is irradiated in the first scan is a special area for forming a crystal nucleus, whereas the irradiation target area in the second and subsequent scans is a special area. This is because they are common in that they have an effect of further growing the already formed crystal.

  The illumination pattern in the third scan is shown in FIG. Here, the regions R11 and R12 which have been irradiated with light by the second scan are indicated by rough hatching. On the other hand, it is an area R13 indicated by fine hatching to be irradiated with light in the third scan. This area R13 is an area occupied by all the pixels corresponding to the above conditions (1) to (3). In this example, two pixels adjacent to the right of the region R12, one pixel below the two pixels, and two pixels immediately below the region R12 correspond. The third light irradiation is performed with the region R13 occupied by these pixels as the irradiation target region. As a result, crystallization of the organic semiconductor proceeds in the region, but it is expected that crystal grains will grow larger by growing the crystal of the adjacent region R2 as a nucleus.

  With the light irradiation up to this point, crystallization is completed from the upper end to the lower end of the left end portion of the pattern PT. Therefore, in the subsequent scanning, as shown in FIGS. (D) to (f), the region occupied by the continuous pixels (3 pixels in this example) including the upper end to the lower end of the pattern PT is the irradiation target area (in FIG. Light irradiation is sequentially performed while moving the irradiation target area one pixel at a time to the right as R14, R15,. Finally, as shown in FIG. 6G, the light irradiation is completed for the entire pattern PT. Note that although the process in the middle of the drawing is partially omitted in the drawing, the movement of the irradiation target area is discrete, but in practice, it is a movement of one pixel at a time. The irradiation target area is sequentially set so as to gradually move away from the primary irradiation area which is the first irradiation target area.

  By repeating the scanning with the light beam while sequentially moving the irradiation target area in this manner, crystallization progresses from the left end to the right end of the drawing in the pattern PT. Therefore, for example, it is possible to form the organic semiconductor layer OS having significantly excellent crystallinity as compared with the case where light is simultaneously irradiated to the entire pattern PT. It is also possible to single-crystallize the whole pattern PT if the amount of energy given to the pattern PT by one scan and the time interval of each scan are appropriate.

  In the case where sufficient energy for crystallization can not be given to one pixel by one light irradiation, light irradiation is performed multiple times with respect to the same irradiation target area with a time interval. May be According to the flowchart shown in FIG. 8, the scanning in step S303 may be repeatedly performed a predetermined number of times without reading out new irradiation data (step S302) on the way. Even if it is possible to give sufficient energy by one light irradiation in terms of the device configuration, for example, the progress rate of crystallization is adjusted by performing light irradiation in a plurality of times with relatively small power. It is also possible.

  In order to avoid confusion, in this specification, when the scan of step S303 is repeatedly performed a plurality of times in this manner, these multiple scans are collectively referred to as "one scan". That is, for example, when the irradiation pattern is changed from the previous scan and the Nth scan is performed, and the scan with the same irradiation pattern based on the same irradiation data is performed, these scans are combined to obtain “Nth It is called "scan".

  Further, in the irradiation pattern shown in FIG. 9, only the pixels on the substrate including at least a part of the pattern PT are to be irradiated. Thereby, unnecessary light irradiation on the substrate can be minimized while performing accurate light irradiation on the organic semiconductor in the pattern PT, so that temperature rise and damage of the substrate can be avoided. Therefore, for example, even a resin substrate having low heat resistance can be used without any problem. On the other hand, by setting the pixels including at least a part of the pattern PT as the irradiation target, the light irradiation is performed also on the outside of the pattern PT. Therefore, even if the positional relationship between the incident light beam L5 and the pattern PT is slightly deviated from the design time, it is possible to appropriately execute the light irradiation to the pattern PT.

  In addition, in order to make the correspondence to such positional deviation more reliable, for example, it is also possible to do as follows.

  FIG. 10 is a view showing an example of the irradiation pattern corresponding to the positional deviation of the pattern. A case is considered where there is a possibility that the position of incidence of the light beam on the substrate SB and the position of the pattern PT on the substrate SB may relatively deviate, for example, within one pixel. At this time, as shown in the figure (a), the irradiation target area R21 to be initially subjected to the light irradiation has a pattern further than the pixels including the peripheral portion of the pattern PT which is made the primary irradiation area R11 in the example of FIG. It is set at the position of a pixel that is one pixel far from PT. Light irradiation is started from this area R21.

  Since this area R21 does not include a part of the pattern PT, it does not immediately correspond to the "primary irradiation target area". The irradiation target area when at least a part of the subsequent scanning includes a part of the pattern PT is a "primary irradiation area" in a strict sense. When the region R21 comes to include a part of the pattern PT due to the positional deviation, the region R21 corresponds to the primary irradiation target region.

  Thereafter, irradiation target regions R22, R23,... Are set according to the same rule as in the example of FIG. 9, and scanning with the light beam is sequentially executed. FIG.10 (b)-(g) have shown the transition of the irradiation completed area | region and irradiation object area | region in the process. Here, as shown in (e) and (f), for example, the width of the irradiation area is set to include a margin of one pixel or more in the vertical direction more than the width of the pattern PT. As a result, if the deviation between the incident position of the light beam and the position of the pattern PT is within one pixel, the problem that the unirradiated area remains in the pattern PT due to the positional deviation is surely avoided. Moreover, it becomes possible to perform light irradiation appropriately also to the pattern formed in the flexible film resin substrate which is easy to produce distortion and expansion-contraction.

  The only change from the example of FIG. 9 to make this possible is the content of the illumination data. That is, the above function can be basically realized by the same control as that of the example of FIG. 9 by taking into consideration the positional displacement amount that may occur when the irradiation data is created. In this example, a margin for one pixel is provided in each of the upper, lower, left, and right directions of the pattern PT, but if there is a difference in the direction of occurrence of positional deviation, an asymmetric margin taking that point into consideration The irradiation pattern which it has may be set. In the case where the substrate SB may be damaged by the light irradiation, naturally, the smaller the margin, the better.

  In the above example, the pattern PT is rectangular, and the arrangement direction of the pixels on the substrate SB is the same as the extending direction of the pattern PT. That is, each side forming the contour of the pattern PT is parallel to the arrangement direction of the pixels. However, this is not necessarily the case in an actual device. That is, there is a possibility that the side forming the outline of the pattern PT is not parallel to the arrangement direction of the pixels. Hereinafter, an example in which the pattern PT is not parallel to the arrangement direction of the pixels will be described.

  FIG. 11 is a view showing an example of the irradiation pattern when the arrangement direction of the pixels and the side direction of the pattern do not coincide with each other. Here, an example is shown in which the pattern PT shown in FIG. 7 is arranged in a direction different from the arrangement direction of the pixels indicated by the direction of the dotted line. However, the same concept can be applied to all cases where at least one side of the pattern outline is not parallel to the arrangement direction of the pixels. The inclination amount of the pattern (more specifically, the contour thereof) with respect to the arrangement direction of the pixels can be grasped in advance from design data of the pattern.

  As shown in FIG. 6A, also in this case, the primary irradiation area R31 is set at the position of the pixel including the peripheral portion of the pattern PT, and light irradiation is performed first on this area. Then, as shown in the figure (b), in the next scan, the secondary irradiation area R32 is set at the position of the pixel adjacent to the primary irradiation area R31 and including at least a part of the pattern PT. To be done. Thereby, crystal growth proceeds with the crystal formed in the primary irradiation region R31 as a nucleus. Thereafter, the scanning is performed while sequentially moving the irradiation target regions R33, R34, ... in the same manner, whereby crystallization proceeds in one direction as shown in (c) to (f). Here, as shown in the figure (e), the width of the irradiation target area is appropriately increased or decreased according to the outer shape of the pattern PT. Thereby, the entire pattern PT can be crystallized while controlling the direction of crystal growth.

  In each of the above-described examples, a crystal serving as a nucleus is produced in the region where the light irradiation is first performed, and the crystal is improved by growing the crystal in one direction. Here, for example, in the case where the size of the pattern PT is sufficiently large relative to the size of the pixel set on the substrate SB by the light irradiation device 1, the entire pattern PT is irradiated with light and crystallized many times. The need to repeat the scan increases the time required for processing. The following processing modes are also conceivable in order to shorten the processing time.

  FIG. 12 is a view showing an example of an irradiation pattern capable of shortening the time required for crystallization. The pattern PT to be crystallized is the same as that shown in FIG. As shown in FIG. 6A, the primary irradiation area R41 to which the light beam is irradiated first is set not to a corner of the pattern PT, but to an area occupied by pixels in the approximate center of the pattern PT in the longitudinal direction. Also in this case, a pixel including a part of the peripheral portion of the pattern PT is selected as the pixel. In this example, the primary irradiation area R41 is set at the position of the pixel including the lower side of the pattern PT, but may be another position.

  Then, a secondary irradiation area R42 in the second scan is set in an area occupied by all the pixels satisfying the above conditions (1) to (3) with respect to the primary irradiation area R41 set in this way. As shown in FIG. 7B, in this example, the secondary irradiation region R42 is set to surround the left, right, and upper sides of the primary irradiation region R41. Hereinafter, as shown in FIGS. (C) and (d), secondary irradiation regions R43, R44,... Are sequentially set and light irradiation is performed, so that crystal growth is directed from the central portion of pattern PT to both left and right. It will progress. This makes it possible to reduce the time required to irradiate the entire pattern PT with light approximately in half.

  In addition to the fact that the processing time can be shortened, depending on the shape of the pattern, the method shown in FIG. 11 may exhibit better crystallinity. For example, in the case of a pattern of shapes in which two relatively wide portions are connected to each other at one narrow portion, the whole is generated by generating nuclei at the narrow portions and growing them toward the wide portions. In some cases, single crystallization can be achieved. In this embodiment, such crystal growth can be realized because the direction in which the irradiated region spreads can be arbitrarily controlled by setting the irradiation pattern.

  Also in this case, only one primary irradiation area to which light irradiation is performed first is set in part of the pattern PT. When crystals serving as nuclei are generated at two or more locations of the pattern PT, crystal grain boundaries will almost certainly occur at the portions where the crystals grown from each are in contact. In order to avoid this, it is desirable that the crystals serving as nuclei be generated at only one place in one pattern PT.

  In addition, it is not preferable that the primary irradiation area is set at the position of the pixel included in the pattern PT, that is, not including the peripheral portion. The reason is as follows. The crystals initially formed in the primary irradiation region are not necessarily single crystals. By advancing crystallization in a certain direction from such a crystal as a nucleus, it is possible to selectively grow a crystal having a specific crystal orientation among the minute crystals formed at the beginning to achieve single crystallization. It becomes. When a nucleus is formed inside the pattern PT, a crystal grain boundary is generated in the process of crystal growth in each direction with the nucleus as a center, and there is a high probability of being polycrystalline as a whole. In order to limit the direction of crystal growth, it is desirable that the primary irradiation region be provided at a position including the peripheral portion of the pattern PT.

  In each of the examples shown in FIGS. 11 and 12, it is possible to take measures to cope with the positional deviation that may occur between the pixels and the pattern shown in FIG.

  As mentioned above, although the pattern PT which has a specific shape was mentioned as an example, the crystallization process of the organic semiconductor by irradiation of a light beam was explained, but also to any pattern shape other than this, according to the shape It is possible to create an irradiation pattern and apply light by applying any of the above-described technical ideas.

  Even when a plurality of patterns separated from each other are formed on one substrate SB, crystals are individually irradiated in the respective patterns by irradiating light as described above in the process of scanning the entire substrate SB with the light beam. Progress, and it is possible to obtain good crystallinity in each. Even when the shapes and sizes of the plurality of patterns are different, good crystallinity can be obtained for any of them by setting the irradiation pattern according to each.

  As described above, in the light irradiation apparatus 1 of the above embodiment, the stage 17 functions as the "substrate holding unit" of the present invention, and the light source unit 11, the light modulation unit 13, and the projection optical system 15 are integrated as the present invention. Functions as a "light irradiator" of In the above-described light irradiation process, the setting of the primary irradiation area and the first light irradiation based on it correspond to the "first step" of the present invention, while the setting of the secondary irradiation area and the second time based on it The subsequent light irradiation corresponds to the "second step" of the present invention.

  The present invention is not limited to the above-described embodiment, and various modifications can be made other than the above without departing from the scope of the invention. For example, the light irradiation device 1 of the above embodiment is configured to scan the substrate SB with the light beam by modulating a single light beam emitted from the light source unit 11 by the light modulation unit 13. Instead of this, an apparatus capable of causing light beams to simultaneously enter each position of the substrate SB may be used. In this case, the above-described irradiation pattern can be realized by individually controlling on / off of the light beam incident on each position.

  Further, for example, although the incident position of the light beam to the substrate SB is controlled in pixel units in the above embodiment, for example, an irradiation apparatus capable of adjusting the irradiation range in units smaller than the pixel size in the scanning direction of the light beam It may be used. In addition, an irradiation device may be used that achieves half tone by changing not only the on / off of the light beam but also the output light intensity, but at least the primary irradiation region does not generate multiple crystal nuclei at different positions. It is desirable that a clear difference be provided between the amount of energy given by the area irradiated with light and the area around it.

  In this regard, since the incident position of the light beam is set in units of pixels in the above embodiment, the secondary irradiation area is set to an area adjacent to the irradiated area on which the light irradiation has already been performed, and overlaps at the same position. No light is emitted. However, since the energy density of the irradiation light beam is generally lower than that of the central part at the peripheral part of the beam spot, the irradiation areas should be partially overlapped in order to avoid underexposure at the peripheral part of the beam spot. It is also good. In order to make this possible, the secondary irradiation area at each time may be set to include all the boundaries between the irradiated area and the non-irradiated area.

  Further, for example, in the above-described light irradiation process, the irradiated area that has already been irradiated with light is excluded from the subsequent irradiation target area, and no light irradiation is performed on the irradiated area in the subsequent scanning. This is to prevent damage to the crystal and the substrate by applying excessive energy to the already crystallized region. If such problems do not occur, additional illumination may be performed on the illuminated area. For example, by including the irradiated area in the setting of the secondary irradiation area, it is also possible to expand the irradiation area for each scan.

  Also, for example, in the above embodiment, the light irradiation position is determined by the light modulation by the light modulation unit 13 and the movement of the substrate SB by the stage moving mechanism 171, but the light irradiation position is determined by only one of them. May be

  Further, for example, in the manufacturing method of the above embodiment, a so-called top gate type thin film transistor is manufactured by forming the organic semiconductor layer OS on the substrate on which the source electrode and the drain electrode are formed in advance and finally forming the gate electrode. How to However, the method for producing an organic semiconductor according to the present invention is characterized by the process of forming an organic semiconductor layer on any substrate, and the contents and order of processes provided before and after that and the kind and shape of the element formed Is not limited to the above and is optional.

  As described above, as illustrated in the specific embodiment, in the method of manufacturing an organic semiconductor according to the present invention, for example, the secondary irradiation region is the entire boundary between the irradiated region and the non-irradiation region. It can be set to be included or adjacent to all of the boundaries. According to such a configuration, it is possible to prevent the occurrence of a region where sufficient crystallization is not performed without receiving sufficient light irradiation in the pattern.

  Also, for example, the primary irradiation area can be set to include a part of the peripheral edge of the pattern and a part of the exposed surface of the substrate adjacent to the peripheral edge. According to such setting, even when the relationship between the pattern position on the substrate and the irradiation position of the light beam deviates slightly from the design value, crystallization can be reliably started from the peripheral portion of the pattern.

  In addition, for example, the irradiation in the first step and the irradiation in the second step can be configured to be interrupted intermittently in time. According to such a configuration, the progress of crystal growth can be controlled by the time interval of irradiation.

  For example, it is also possible to constitute so that the setting of secondary radiation field mutually differs, and it performs so that the 2nd process of multiple times may be performed. According to such a configuration, even if the size of the pattern is sufficiently large relative to the spot size of the light beam, the entire pattern can be finally irradiated with light by sequentially moving the secondary irradiation region and performing light irradiation. It is possible.

  In this case, the secondary irradiation area can be set apart from the primary irradiation area, for example, each time the second step is performed. According to such a configuration, since crystal growth can be advanced in a specific direction from the crystal initially formed by light irradiation to the primary irradiation region, crystallinity can be improved. .

  Also, for example, the secondary irradiation area can be set substantially without including the irradiated area. According to such a configuration, it is possible to prevent the crystal and the substrate in the region from being damaged due to the excessive energy being applied by performing the light irradiation to the specific region a plurality of times.

  Also, for example, in the first step, irradiation to the primary irradiation area may be performed a plurality of times at intervals of time. Also, in the one second process, the irradiation to the same secondary irradiation area may be performed plural times with time left. According to such a configuration, crystallization can be favorably advanced even when sufficient energy for crystallization can not be given by one light irradiation. Moreover, it becomes possible to adjust the advancing speed of crystallization by giving energy in multiple times and dividing it.

  Also for example, the size of the primary radiation area can be the same as the beam size at the substrate surface of the light beam. The beam size is the smallest size that can be realized as the irradiation target area, and thus the generation of a plurality of crystal nuclei in a wide area can be suppressed by reducing the size of the primary irradiation area as much as possible.

  Alternatively, for example, the light beam may be irradiated to a substrate on which a plurality of patterns separated from each other are formed. In the present invention, the pattern of light irradiation to the substrate is specified by the irradiation data, and the irradiation pattern is not limited to continuous on the substrate, and discrete ones can be set. Therefore, even in the case where a plurality of patterns are formed on the substrate, light irradiation can be individually performed on them to promote favorable crystallization.

  Also, for example, the substrate may be preheated, whereby crystallization can be immediately initiated by light irradiation. The substrate temperature at this time is preferably a temperature lower than the crystal transition temperature of the organic semiconductor material. According to such a configuration, crystallization of the organic semiconductor material before it is irradiated with light can be avoided, and control of crystal growth by light irradiation can be performed more effectively.

  Further, for example, in the light irradiation apparatus according to the present invention, the light irradiation unit is configured to two-dimensionally control the incident position of light on the substrate by the two-dimensional optical element or the one-dimensional optical element arranged in plural. May be According to such a configuration, it is possible to realize optimal light irradiation according to the shape and structure of the pattern to be irradiated with light.

  The present invention is applicable to all techniques for manufacturing an organic semiconductor on a substrate, and is particularly suitable for forming a plurality of semiconductor elements on one substrate.

1 light irradiation device 11 light source unit (light irradiation unit)
13 light modulation unit (light irradiation unit)
15 Projection optical system (light irradiation part)
17 Stage (substrate holder)
20 Control part PT pattern R11 Primary irradiation area R12, R13 Secondary irradiation area SB Substrate

Claims (13)

Forming a pattern of liquid containing an organic semiconductor material on a substrate;
Irradiating the coated liquid with a light beam to crystallize the organic semiconductor;
The irradiation of the light beam is performed according to irradiation data according to the pattern of the substrate by executing intermittent emission of the light beam and controlling an incident position of the emitted light beam to the substrate. It is executed by an irradiation device capable of selectively irradiating the light beam to the specified irradiation target area,
The irradiation device is configured to continuously generate one pattern
After the first step of irradiating the light beam is performed with the primary irradiation area, which is a partial area including the peripheral portion in the pattern, as the irradiation target area,
A second step of irradiating the light beam with the secondary irradiation area including the boundary between the irradiated area irradiated with the light beam and the non-irradiated area in the pattern including or adjacent to the boundary as the irradiation target area A method of manufacturing an organic semiconductor, wherein the entire pattern is crystallized by performing at least once.   The method for manufacturing an organic semiconductor according to claim 1, wherein the secondary irradiation region includes all of the boundary between the irradiated region and the non-irradiation region, or is set to be adjacent to all the boundary.   The method for manufacturing an organic semiconductor according to claim 1, wherein the primary irradiation region includes a part of a peripheral edge of the pattern and a part of an exposed surface of the substrate adjacent to the peripheral edge.   The method for manufacturing an organic semiconductor according to any one of claims 1 to 3, wherein the irradiation in the first step and the irradiation in the second step are intermittently interrupted.   The method of manufacturing an organic semiconductor according to any one of claims 1 to 4, wherein the setting of the secondary irradiation region is made different from each other and the second step is performed a plurality of times.   The method of manufacturing an organic semiconductor according to claim 5, wherein the secondary irradiation region is set to be away from the primary irradiation region each time the second step is performed.   The method for manufacturing an organic semiconductor according to any one of claims 1 to 6, wherein the secondary irradiation region is set substantially without including the irradiated region.   The method for manufacturing an organic semiconductor according to any one of claims 1 to 7, wherein in the first step, irradiation to the primary irradiation region is performed a plurality of times at intervals of time.   The method for manufacturing an organic semiconductor according to any one of claims 1 to 8, wherein irradiation to the same second irradiation region is performed a plurality of times at one time in the second step.   The method of manufacturing an organic semiconductor according to any one of claims 1 to 9, wherein the size of the primary irradiation area is the same as the beam size of the light beam on the substrate surface.   The method of manufacturing an organic semiconductor according to any one of claims 1 to 10, wherein the light beam is irradiated to the substrate on which a plurality of the patterns separated from each other are formed. A substrate holding unit for holding a substrate having a pattern formed of a liquid containing an organic semiconductor material;
A light irradiator for performing intermittent emission of a light beam and adjusting an incident position of the emitted light beam to the substrate;
And a control unit configured to control the light emitting unit based on the irradiation data according to the pattern to selectively irradiate the light beam to an irradiation target area specified by the irradiation data in the substrate.
Regarding the one continuous pattern,
After irradiating the light beam with the primary irradiation area, which is a partial area including the peripheral portion in the pattern, as the irradiation target area,
The light beam is irradiated at least once with the secondary irradiation area including the boundary between the irradiated area irradiated with the light beam and the non-irradiated area in the pattern including or adjacent to the boundary being the irradiation target area The light irradiation apparatus which crystallizes the whole of the said pattern by carrying out.   The light irradiation apparatus according to claim 12, wherein the substrate holding unit heats the substrate to a temperature lower than a crystal transition temperature of the organic semiconductor material.

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