JP2019046906A - Semiconductor device and manufacturing method of the same - Google Patents

Abstract

To achieve a semiconductor device with an edge-mounted semiconductor element, which has higher reliability than in the past; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises a semiconductor element including an end-face electrode 222 which is exposed on an end face 20c of a semiconductor substrate 20 and composed of a material having solder, in which, even though burrs occur on the end-face electrode 222, the burrs can be removed by heat application and the occurrence of leakage at the end face is inhibited. In the semiconductor device, the semiconductor element 100 comprising the semiconductor substrate is mounted on one surface 10a of a mounting substrate 10 with an end face where the end-face electrode is formed facing the one surface 10a of the mounting substrate 10. This makes the semiconductor element be edge mounted by the end-face electrode and achieves the semiconductor device having higher reliability than in the past. A manufacturing method of the semiconductor device includes the step of: forming the end-face electrode by solder; and subsequently, melting the end-face electrode and solidifying the end-face electrode again. This makes it possible to remove burrs of the end-face electrode easily and manufacture the semiconductor device having high reliability.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor device in which a semiconductor element provided with a through electrode exposed from a semiconductor substrate at an end surface is mounted with the end surface on which the through electrode is formed facing a mounting substrate, and a method of manufacturing the same.

  Conventionally, a semiconductor substrate having a front surface and a back surface and having a plurality of vias formed to extend from the front surface side to the back surface side is provided, and a part of the plurality of vias is divided in a plan view There is known a semiconductor element exposed at an end face which is a surface connecting the front and back surfaces. Then, with such an end face facing one surface of another circuit board, such a semiconductor element is mounted on the one side via a bonding material provided in a part of vias exposed at the end face. Semiconductor devices are known (hereinafter, such mounting is referred to as “end surface mounting”). Examples of this type of semiconductor device include the invention described in Patent Document 1.

  The semiconductor device described in Patent Document 1 has a first semiconductor substrate having one surface and the other surface in a relationship of front and back, a first semiconductor substrate on which a circuit such as an accelerometer is formed, and a second surface and a second surface. And a semiconductor device having the above-described semiconductor substrate. The first semiconductor substrate is formed with a plurality of vias extending from the other surface to one surface side, and one surface of the first semiconductor substrate is joined to the back surface of the second semiconductor substrate. The second semiconductor substrate has a plurality of vias extending from the front surface to the rear surface. In these vias, wirings electrically connected to the circuit of the first semiconductor substrate are formed on the inner wall. In such a configuration, the semiconductor device described in Patent Document 1 is divided such that a part of vias of the semiconductor element has an arc shape as viewed from the normal direction to one surface, and the inner wall surface of the part of the vias Is exposed at the end face side. Then, in the semiconductor device, the end face of the semiconductor element faces one surface of the other circuit board, and the end face is mounted on the other surface of the other circuit board through the bonding material provided in the part of the via. ing.

  When three semiconductor elements that can be mounted on an end face in this way and that are made into an acceleration sensor are mounted on one circuit board, for example, so that accelerations in three axial directions orthogonal to one another can be detected. The semiconductor device can detect acceleration in each of the three axial directions.

JP, 2012-160733, A

  By the way, the present inventors consider carrying out such end face mounting using a Si penetrating electrode formed by filling a via penetrating a semiconductor substrate with a conductive material such as a metal material, that is, TSV. doing. In this case, TSV (hereinafter referred to as “end surface TSV”) which is divided at the end surface in plan view and exposed at the end surface and used for end surface mounting enlarges the area of end surface mounting and improves junction reliability. Preferably, the diameter is larger than the diameters of other TSVs not exposed at the end face. However, in the case of forming a plurality of TSVs having different diameters in this manner, it is difficult to carry out by one plating method.

  Specifically, when viewed in the normal direction to the surface on which the plurality of vias are formed, the plurality of vias having the smaller diameter (hereinafter referred to as “small diameter vias”) and the large diameter vias (hereinafter “large diameter vias”) Consider the case where the TSV filling each of the two types of vias) is formed by plating. At this time, the time required to form a TSV filling large diameter vias (hereinafter referred to as “large diameter TSV”) is longer than the time required to form TSV filling small diameter vias (hereinafter referred to as “small diameter TSV”). Too long. Therefore, when each of the small diameter via and the large diameter via is to be filled by a single plating method, plating will continue even after forming the small diameter TSV, and the small diameter TSV is excessively formed so as to protrude the semiconductor substrate. . Further, the method of forming the large diameter TSV by the plating method requires time, and therefore, the cost is higher than the case of forming only the small diameter TSV by the plating method.

  Here, the end face TSV is formed by performing a dicing cut so as to divide the TSV in plan view after filling the via with a metal material to form the TSV, so the cross section of the TSV is on the end face side It will be in the exposed state. The end surface TSV formed by such a process is caused by the extension of the metal material when the metal material forming the end surface TSV is cut by the dicing blade, and protrudes from the end surface TSV side to the semiconductor substrate in plan view Projections, or burrs, may be formed. When such a burr is formed, the end face TSV is electrically connected to the semiconductor substrate to short-circuit, which causes a decrease in yield and a decrease in reliability.

  The present invention has been made in view of the above-described point, and a semiconductor element in which a short circuit at the end face TSV is suppressed while having an end face TSV having a diameter larger than that of the other TSVs is used as another mounting substrate. An object of the present invention is to provide an edge-mounted semiconductor device and a method of manufacturing the same.

  In order to achieve the above object, the semiconductor device according to claim 1 comprises a mounting substrate (10) having one surface (10a), a front surface (20a), a back surface (20b) and an end surface (20c) connecting the front and back surfaces. And a semiconductor element (100) having a sensor unit (30) for outputting a signal according to a physical quantity. In such a configuration, the semiconductor substrate has a groove (21) formed on the end surface to connect the front surface and the back surface, and the groove includes an insulating film (211) covering the inner wall surface of the groove and an insulating film. The groove is filled and an end surface electrode (212) formed of solder is formed, and the semiconductor element is on one side with the surface on which the end surface electrode is formed facing one side. And is electrically connected to the mounting substrate through the end face electrode.

  As described above, even when burrs are generated on the end surface TSV by using a material in which the groove formed on the end surface is filled and the end surface electrode exposed on the end surface, that is, the material having solder on the end surface TSV is used. It becomes a structure of the semiconductor element which can remove a burr | flash by heating. In addition, with the configuration of the semiconductor element capable of removing the burr at the end face TSV, the generation of the leak current of the semiconductor element at the end face TSV can be suppressed, and the yield and the reliability can be improved. Therefore, the yield and reliability of the semiconductor device using such a semiconductor element are improved.

  In addition, the code | symbol in the parenthesis of each said means shows an example of the correspondence with the specific means as described in embodiment mentioned later.

It is a perspective view showing a semiconductor device of a 1st embodiment. FIG. 2 is a cross-sectional view showing a cross section when the semiconductor device of the first embodiment is cut along a plane passing between II and II in FIG. 1; It is a perspective view which shows the semiconductor element mounted in an end surface. FIG. 7 is a view showing the manufacturing process of the semiconductor device of the first embodiment. FIG. 5 is a view showing the manufacturing process of the semiconductor device of the first embodiment following FIG. 4; It is a top view which shows the burr | flash produced in an end surface electrode, and its removal, (a) is a figure which shows immediately after division | segmentation of a semiconductor substrate, (b) is a figure which shows after melt | melting and solidifying an end surface electrode. It is a figure shown about the modification of the structure of the semiconductor element in the semiconductor device of 1st Embodiment, Comprising: (a) is a perspective view, (b) is sectional drawing of (a). It is a figure shown about the modification of the structure of the semiconductor element in the semiconductor device of 1st Embodiment, Comprising: (a) is a perspective view, (b) is sectional drawing of (a). It is a perspective view which shows the semiconductor device of 2nd Embodiment.

  Hereinafter, an embodiment of the present invention will be described based on the drawings. In the following embodiments, parts that are the same as or equivalent to each other will be described with the same reference numerals.

First Embodiment
The semiconductor device S1 of the first embodiment will be described with reference to FIGS. In FIGS. 1 and 2, in order to make the configuration easy to understand, configurations other than the mounting substrate 10, the semiconductor element 100, and the bonding material 40, which will be described later, are omitted. In FIGS. 1 and 3, in order to make the configuration easy to understand, the insulating film formed on the surface 20 a side of the semiconductor element 100 is shown by a broken line for a portion that can not be seen from one direction when viewed obliquely from one direction. Is omitted.

  As shown in FIG. 1 or 2, the semiconductor device S1 of the present embodiment includes the mounting substrate 10 and the semiconductor element 100, and the semiconductor element 100 is mounted on one surface 10a of the mounting substrate 10. There is.

  In the present embodiment, the mounting substrate 10 is a plate-like substrate having a surface 10 a made of, for example, a glass epoxy resin or the like. The mounting substrate 10 may include a circuit wiring (not shown), an electrode pad, an IC (Integrated Circuit abbreviation) chip (not shown) for controlling the semiconductor element 100, or the like.

  In the present embodiment, as shown in FIG. 1 or 2, the semiconductor device 100 includes the semiconductor substrate 20 and the sensor unit 30 formed on the semiconductor substrate 20, and the semiconductor device 100 is mounted via the bonding material 40. It is mounted on one surface 10 a of the substrate 10. Specifically, as shown in FIG. 3, the semiconductor element 100 has the end surface 20c on which the mounting surface 20ca on which the end surface electrode 212 is formed is directed to the one surface 10a side of the mounting substrate 10, The end face is mounted.

  The semiconductor substrate 20 is made of, for example, silicon, and in the present embodiment, as shown in FIG. 3, a rectangular plate provided with a front surface 20a, a back surface 20b opposite thereto, and an end surface 20c connecting the front surface 20a and the back surface 20b. It is in the form of As shown in FIG. 2, the semiconductor substrate 20 has a groove 21 and a through hole 22 that connect the front surface 20 a and the back surface 20 b.

In the present embodiment, as shown in FIG. 3, in the present embodiment, the groove portion 21 has an arc shape as viewed from the normal direction to the back surface 20 b (hereinafter referred to as “back surface normal direction”). . The inner wall surface of the groove 21 is covered with a first insulating film 211 made of an insulating material such as SiO ₂ , for example. The groove portion 21 is filled with the end surface electrode 212 via the first insulating film 211, as shown in FIG. The groove portion 21 is not limited to the arc shape, and may have a trapezoidal shape, a polygonal shape, or the like, a taper may be provided, or another shape.

  The end face electrode 212 is made of, for example, a conductive material having a solder. The end face electrode 212 is formed as a result of being divided by dicing cutting after forming the through hole, the insulating film covering the inner wall surface thereof, and the electrode filling the through hole through the insulating film on the semiconductor substrate 20. At 20 c, the cross section in the extending direction is exposed from the semiconductor substrate 20. The details will be described in the manufacturing process described later.

  As shown in FIG. 1, the end face electrode 212 has the semiconductor element 100 mounted on one surface 10 a of the mounting substrate 10 via the bonding material 40, and is disposed so that the exposed cross section faces the one surface 10 a side. In other words, the semiconductor element 100 is arranged such that the mounting surface 20ca of the end surface 20c on which the end surface electrode 212 is formed faces the one surface 10a side. The end surface electrode 212 is electrically connected to the mounting substrate 10 via the bonding material 40 in the present embodiment.

  As shown in FIG. 3, it is preferable that the maximum width of the end surface electrode 212 be larger than the maximum width of a through electrode 222 described later, as viewed from the back surface normal direction. More specifically, it is preferable that the width of the mounting surface 20 ca of the end surface electrode 212 be larger than the maximum width of the through electrode 222 when viewed from the back surface normal direction. This is to increase the reliability of the junction of the semiconductor element 100 by increasing the exposed area of the mounting surface 20 ca of the end face electrode 212, that is, the area of the junction.

  The widths of the end face electrode 212 and the through electrode 222 are arbitrary and adjusted appropriately. Further, in the present embodiment, an example in which two groove portions 21, first insulating films 211 and two end surface electrodes 212 are formed is described, but the present invention is not limited thereto, and the number thereof may be appropriately changed. Good.

In the present embodiment, as shown in FIG. 3, the through holes 22 are circular, and three through holes 22 are provided inside the outer region of the semiconductor substrate 20 when viewed from the back surface normal direction. The inner wall surface of the through hole 22 is covered with a second insulating film 221 made of an insulating material such as SiO ₂ , for example. The through holes 22 are filled with the through electrodes 222 via the second insulating film 221 as shown in FIG.

  The through electrode 222 is made of, for example, a conductive material having a solder, similarly to the end surface electrode 212. In the present embodiment, the through electrode 222 is electrically connected to the end surface electrode 212 and the sensor unit 30 via a circuit wiring (not shown) provided on the front surface 20 a side or the rear surface 20 b side.

  The through hole 22 is not limited to a circular shape, and may have an elliptical shape, a polygonal shape, or the like, may be provided with a taper, or may have another shape. Further, although an example in which three through holes 22, two second insulating films 221, and three through electrodes 222 are formed is described in the present embodiment, the present invention is not limited to this, and the number of these may be appropriately changed. .

  The sensor unit 30 outputs a signal corresponding to a physical quantity such as acceleration, angular velocity, or magnetism, and is formed by a known semiconductor process. In the present embodiment, the sensor unit 30 is a circuit configuration that detects an angular velocity, that is, a gyro sensor, and outputs a signal according to the angular velocity in the surface normal direction.

  The sensor unit 30 may be, for example, an acceleration sensor, a gyro sensor, or a geomagnetic sensor. However, the configuration of the sensor unit 30 is known, and thus the detailed description of the configuration and the like is omitted in this specification. Moreover, although the sensor part 30 is formed in the surface 20a side of the semiconductor substrate 20 in this embodiment, it is not restricted to this and may be formed in the back surface 20b side.

  The bonding material 40 is made of a conductive material having solder, for example, a mixed material of solder, solder particles and epoxy resin (so-called resin reinforced solder), and the like, and electrically mount substrate 10 and end surface electrode 212. Connected.

  The above is the configuration of the semiconductor device S1 of the present embodiment. The semiconductor device S1 thus configured functions as a gyro sensor or the like as a whole.

  Next, a method of manufacturing the semiconductor device S1 will be described with reference to FIG. 4 and FIG. Note that among the steps of forming the semiconductor element 100, the steps other than the steps of forming the end surface electrode 212 and the through electrode 222 are known, and therefore, will be briefly described here.

First, as shown in FIG. 4A, a semiconductor substrate 20 made of silicon and having a front surface 20a and a back surface 20b is prepared. And as shown to FIG. 4B, the sensor part 30 is formed in the surface 20a side by a normal semiconductor process. Thereafter, an insulating film made of an insulating material such as SiO ₂ is formed on the surface 20 a side by a method such as CVD (abbreviation of Chemical Vapor Deposition). Then, for example, a not-shown wiring layer electrically connected to the sensor unit 30 is formed by a vacuum film forming method such as sputtering or vapor deposition, and the wiring layer is covered with an insulating film by the same method as described above. Thus, as shown in FIG. 4C, a surface insulating film 20A is formed which covers the surface 20a and is provided with a wiring layer (not shown).

  After the surface insulating film 20A is formed, as shown in FIG. 4D, the surface 20a and the back surface 20b are connected by, for example, dry etching using a mask not shown and viewed from the back surface normal direction. A plurality of trenches 21A which are columnar holes and through holes 22 are formed.

  The trench 21A later becomes the groove 21. The diameter of the trench 21A viewed from the back surface normal direction is larger than the diameter of the through hole 22. The trench 21A and the through hole 22 do not penetrate the surface insulating film 20A, and have a depth such that a not-shown wiring layer formed in the surface insulating film 20A is exposed on the back surface 20b side.

After the trenches 21A and the through holes 22 are formed, an insulating film is formed of, for example, an insulating material such as SiO ₂ by a method such as CVD. Specifically, as shown in FIG. 4E, a back surface insulating film 20B covering the back surface 20b, an inner wall insulating film 21B covering the inner wall surface of the trench 21A, and a second insulating film 221 covering the inner wall surface of the through hole 22. Form

  By the formation of the insulating film described above, the insulating film is also formed on the bottoms of the trenches 21A and the through holes 22 as viewed in the normal direction of the back surface to cover the wiring layer in the surface insulating film 20A. The one formed on the bottom is removed by dry etching or the like. As a result, the state shown in FIG. 4 (e) is obtained.

  Next, a seed layer (not shown), which is a base to which a solder described later is applied by sputtering, is formed on the back surface 20b side, for example. Specifically, for example, the seed layer has a configuration in which thin film Ti and Cu are stacked in this order, and the back surface insulating film 20B, the inner wall insulating film 21B, the second insulating film 221, the bottom in the trench 21A and the through hole It will cover the bottom in 22. Then, in a vacuum or reduced pressure environment, as shown in FIG. 5A, the melted solder is applied to the back surface 20b side of the semiconductor substrate 20, and then the semiconductor substrate 20 is pressurized from the back surface 20b side Form layer 20C. Specifically, an electrode layer 21C filling the trench 21A via the inner wall insulating film 21B and an electrode layer 22C filling the through hole 22 via the second insulating film 221 are formed. Thereafter, as shown in FIG. 5B, polishing is performed to remove an extra seed layer on the back surface 20b side and a part of the electrode layer 20C by the solder.

  By applying the melted solder in a vacuum or reduced pressure environment, it is possible to suppress the formation of voids in the electrode layers 21C and 22C that will be the end face electrodes 212 or the through electrodes 222 later. In addition, by forming the electrode layers 21C and 22C collectively by applying molten solder, the electrode layers 21C and 22C having different maximum widths as viewed from the surface normal direction can be shorter and shorter than the plating method. It can be formed at cost.

  Subsequently, as shown in FIG. 5C, the electrode layer 21C is divided, for example, by dicing cut at a cross section indicated by a dashed dotted line in FIG. 5C, and the cross section in the extending direction of the electrode layer 21C is a semiconductor substrate Exposed from 20. Thus, the semiconductor element 100 including the groove portion 21, the first insulating film 211, and the end face electrode 212 is formed.

  When the solder constituting the electrode layer 21C is extended by dicing cut to form burrs by dividing the electrode layer 21C, for example, the semiconductor substrate 20 is heated to melt the electrode layer 21C and then melted. The solidified electrode layer 21C is solidified again to remove burrs. The details will be described later.

  Subsequently, as shown in FIG. 5D, the semiconductor element 100 is directed to the one surface 10a side of the mounting substrate 10 on which the mounting surface 20ca having the end surface electrode 212 is separately prepared, via the bonding material 40 made of, for example, solder. To mount.

  The semiconductor device S1 can be manufactured by the above-described steps. In addition, said manufacturing method is an example to the last, is not limited to said example, You may change suitably.

  Next, formation of burrs on the end surface electrode 212 and its removal will be described with reference to FIG. In FIG. 6, the sensor unit 30 and the surface insulating film 20 </ b> A in the semiconductor element 100 are omitted in order to make it easy to understand the state of removal of the burr generated on the end surface electrode 212.

  The end face electrode 212 is formed, for example, by dicing cutting along the direction D indicated by the arrow in FIG. 6A, and the cross section of the end face 20c is exposed from the semiconductor substrate 20 at the end face 20c. At this time, the solder constituting the end face electrode 212 is extended by the blade used for dicing cutting, and as shown in FIG. 6A, a protrusion 212a, a so-called burr, contacting the end face 20c of the exposed semiconductor substrate 20 May be formed. When the protrusion 212 a is formed, the end surface electrode 212 is electrically connected to the semiconductor substrate 20 and is in a shorted state. When the end surface electrode 212 is short-circuited with the semiconductor substrate 20 at the end surface 20c, the yield and the reliability of the semiconductor element 100 are reduced, which causes the reliability of the semiconductor device S1 to be reduced.

  In the conventional semiconductor device (hereinafter simply referred to as “conventional semiconductor device”) in which the through electrode is made of a metal material such as Cu, when such a burr is generated in the case of forming the end face electrode Was difficult. As a result of intensive investigations, the present inventors formed the end surface electrode 212 with a conductive material having solder, and used the semiconductor element having a configuration capable of easily removing the burr even if the burr is generated. It came to invent the device.

  Specifically, even when the protrusion 212a as shown in FIG. 6A is formed, the end surface electrode 212 is made of solder, so the semiconductor substrate 20 is heated to melt the protrusion 212a. After that, the protrusion 212a can be removed by solidifying it again. More specifically, for example, it is allowed to stand on a hot plate at 230 ° C. for about 30 seconds in a nitrogen atmosphere to dissolve the end face electrode 212. Then, the solder constituting the end face electrode 212 gathers in the groove 21 by surface tension, and as shown in FIG. 6B, the solder forming the projection 212 a returns to the inside of the groove 21. After the state shown in FIG. 6B is obtained, the solder that has been cooled and re-melted is solidified to form the end electrode 212 without burrs.

  The semiconductor substrate 20 exposed at the mounting surface 20 ca formed by dicing cutting has poor wettability of the solder, and thus the molten solder hardly remains. The heating temperature, time, and heating atmosphere described above are merely examples, and may be changed as appropriate as long as the temperature is higher than the melting point of the solder and the protrusions 212a can be melted. The heating atmosphere is preferably an atmosphere which does not or hardly oxidizes the solder, for example, a nitrogen atmosphere or a hydrogen atmosphere, from the viewpoint of facilitating the mounting process of the semiconductor element 100 by solder reflow or the like.

  As described above, by forming the end surface electrode 212 with a conductive material having a solder, even if a burr is generated, the end surface electrode 212 is heated and melted and then cooled and solidified. You can easily remove the burrs. That is, the semiconductor element 100 in which the short circuit in the end face electrode 212 does not occur can be obtained, and by using this on the end face mounting, the conventional highly reliable semiconductor device can be obtained.

  Also, in the conventional semiconductor device, solder or the like is disposed to surround a portion in the vicinity of the surface 10 a of the surfaces adjacent to the mounting surface of the semiconductor element when viewed in the normal direction to the surface 10 a of the mounting substrate 10. Even if mounted or mounted on the end face, the bonding area was small. In the former case, that is, in the case of solder connection to the mounting substrate 10 using the adjacent surface of the mounting surface, the stress generated in the solder due to vibration is large, which may cause the reliability to be lowered. In the latter case, although the stress generated in the solder due to the vibration is smaller than that in the former case by the end surface mounting, the reliability is not sufficient because the bonding area is small in the conventional semiconductor device.

On the other hand, the semiconductor device S1 of this embodiment has a configuration in which the semiconductor element 100 is mounted on the end face, the stress generated in the solder due to the vibration is small, and the cross-sectional area of the end face electrode 212, ie, the bonding area is large. It becomes a semiconductor device with higher reliability than before.
(Modification 1 of the first embodiment)
In the first embodiment, the example in which the semiconductor element 100 is configured using one semiconductor substrate 20 has been described. However, the semiconductor element 100 is not limited to the above example, and as shown in FIG. What was comprised by the board | substrates 20 and 50 may be used.

  Specifically, as shown in FIGS. 7A and 7B, the semiconductor device 100 according to the first modification uses the semiconductor substrate 20 as the first semiconductor substrate 20, and the first semiconductor substrate 20 and the second semiconductor substrate. The second embodiment differs from the first embodiment in that 50 is stacked. In the first modification, this difference is mainly described.

  FIG. 7A is a perspective view of a semiconductor device 100 formed of the semiconductor substrates 20 and 50. FIG. 7B is a cross-sectional view of the semiconductor device on which the semiconductor element 100 shown in FIG. 7A is mounted is cut along a plane passing between VIIB and VIIB in FIG. 7A.

  In the semiconductor device 100 of the first modification, as shown in FIG. 7B, the sensor unit 30 is formed on the second semiconductor substrate 50, and the second semiconductor substrate 50 functions as a device substrate. The substrate 20 is configured to function as a cap substrate.

  The second semiconductor substrate 50 is made of, for example, silicon, and as shown in FIG. 7A, the one surface 50a and the other surface 50b in the relationship of front and back, and the side surface 50c connecting the one surface 50a and the other surface 50b It has a square plate shape. The second semiconductor substrate 50 has the sensor unit 30 formed on the other surface 50 b side, and is in contact with the surface 20 a side of the first semiconductor substrate 20 on the other surface 50 b side. As shown in FIG. 7A, the second semiconductor substrate 50 has the same planar dimensions as the first semiconductor substrate 20 when viewed from the surface normal direction, and the outer region is the outer region of the first semiconductor substrate 20. It is arranged to overlap with.

  The first semiconductor substrate 20 is, as shown in FIG. 7A, except that the sensor section 30 is not formed and that the end surface electrode 212 is exposed on both sides of the surface 20a and the back surface 20b. The configuration is the same as that of the first embodiment. A concave portion, that is, a cavity may be formed on the surface 20 a side of the first semiconductor substrate 20 to cover the sensor unit 30 formed in the second semiconductor substrate 50. Further, in the present modification, the through electrode and the end face electrode are manufactured only on the first semiconductor substrate 20. However, the through electrode and the end face electrode may be manufactured on the second semiconductor substrate 50, or may be manufactured on both boards. Good.

  The end face electrode 212 of the first semiconductor substrate 20 is exposed from the first semiconductor substrate 20 on the back surface 20b side in the first modification, but is covered with the surface insulating film 20A on the front surface 20a side. The end surface electrode 212 is not directly electrically connected to the other surface 50 b of the second semiconductor substrate 50.

  The semiconductor element 100 is a surface 50ca of the mounting surface 20ca on which the end surface electrode 212 of the first semiconductor substrate 20 is formed and a surface 50ca of the side surface 50c of the second semiconductor substrate 50 facing the same side as the mounting surface 20ca. The end face is mounted toward the 10a side.

  In the case of the first modification, it is preferable that a so-called resin reinforced solder be used as the bonding material 40. Thus, the surface 50 ca of the second semiconductor substrate 50 is bonded to the mounting substrate 10 through the resin of the bonding material 40, and the mounting surface 20 ca of the first semiconductor substrate 20 is soldered through the bonding material 40. As a result of bonding to the mounting substrate 10, alignment becomes easy. When resin reinforced solder is not used as the bonding material 40, for example, an adhesive made of resin is used on the side of the second semiconductor substrate 50, and a conductive bonding material made of solder is used on the side of the first semiconductor substrate 20.

In the first modification as well, as in the first embodiment, a semiconductor device with higher reliability than the conventional one can be obtained.
(Modification 2 of the first embodiment)
As shown in FIG. 8, the semiconductor device 100 may be configured by two semiconductor substrates 20 and 50 and electrodes provided on both mounting surfaces and exposed from the semiconductor substrate may be formed.

  In the second modification, the end surface electrode 212 of the first semiconductor substrate 20 is exposed also on the surface 20 a side, and the second groove 51, the third insulating film 511, and the side electrode 512 are formed on the side surface 50 c of the second semiconductor substrate 50. The present embodiment differs from the first modification in that the semiconductor device 100 is used. In the second modification, this difference is mainly described.

  FIG. 8A is a perspective view of a semiconductor device 100 formed of the semiconductor substrates 20 and 50. FIG. FIG. 8B is a cross-sectional view of the semiconductor device on which the semiconductor element 100 shown in FIG. 8A is mounted is cut along a plane passing between VIIIB and VIIIB in FIG. 8A.

  In the first semiconductor substrate 20, as shown in FIG. 8, the end surface electrode 212 is exposed from the first semiconductor substrate 20 on both sides on the surface 20a side and the back surface 20b side, and is electrically connected to the side surface electrode 512 of the second semiconductor substrate 50. It is connected to the.

  As shown in FIG. 8, in the second semiconductor substrate 50, a second groove 51 having an arc shape is formed on the side surface 50c when viewed from the surface normal direction. An inner wall surface of the second groove 51 is covered with the third insulating film 511, and the second groove 51 is filled with the side electrode 512 made of a conductive material having a solder via the third insulating film 511.

  In the second modification, as shown in FIG. 8A, the side electrodes 512 are formed in the same number as the end surface electrodes 212 and have the same sectional area as the end surface electrodes 212 when viewed from the surface normal direction. ing. The side electrode 512 is disposed to be connected to the end surface electrode 212.

  The semiconductor element 100 is edge-mounted with the mounting surface 20 ca on which the end surface electrode 212 is formed and the mounting surface 50 ca on which the side surface electrode 512 is formed toward the one surface 10 a of the mounting substrate 10.

  The second groove 51, the third insulating film 511, and the side electrode 512 are formed by the same process as the manufacturing process of the end face electrode 212 described in the first embodiment. The semiconductor element 100 can be manufactured by aligning the first semiconductor substrate 20 and the second semiconductor substrate 50 and bonding these semiconductor substrates by an arbitrary semiconductor process.

  Also in the second modification, as in the first embodiment, a semiconductor device with higher reliability than the conventional one can be obtained.

Second Embodiment
The semiconductor device S2 of the second embodiment will be described with reference to FIG. 9, the axial direction on the left and right of the paper surface of FIG. 9 is the X axis, the axial direction orthogonal to the X direction is the Y axis on the plane of the mounting substrate 10, and the axial direction orthogonal to the XY plane is Z It is an axis. Further, in FIG. 9, in order to make the configuration easy to understand, the semiconductor element 100, the bonding material for connecting the control IC 60 to be described later to the mounting substrate 10, and the circuit wiring formed on the mounting substrate 10 are omitted.

  As shown in FIG. 9, the semiconductor device S2 of the present embodiment includes a mounting substrate 10, three semiconductor elements mounted on one surface 10a of the mounting substrate 10, and a control IC 60 for controlling the semiconductor element 100. It differs from the first embodiment in that it is configured. In the present embodiment, this difference is mainly described.

  For example, as shown in FIG. 9, the control IC 60 is mounted on one surface 10a of the mounting substrate 10 via a bonding material (not shown) such as solder, and a plurality of electrode pads 61 are formed on the opposite surface of the one surface 10a. ing. The control IC 60 is electrically connected to the mounting substrate 10 via a wire 62 or the like, and is also electrically connected to the semiconductor element 100 mounted on the end face via the mounting substrate 10.

  Although the three semiconductor elements 100 mounted on the one surface 10 a of the mounting substrate 10 are different in the mounted state, they all have the same structure. As shown in FIG. 9, each of the three semiconductor devices 100 is disposed such that the surface normal direction is along the X axis, Y axis, and Z axis, and corresponds to physical quantities in the X axis, Y axis, and Z axis. It is arranged to output a signal.

  Specifically, in the present embodiment, the semiconductor element 100 that outputs a signal corresponding to the physical amount in the X axis and the Y axis is edge-mounted on the mounting substrate 10 via a bonding material (not shown). Then, the semiconductor element 100 outputting a signal according to the physical quantity in the Z axis is not mounted at the end face, and a face different from the end face or the side face is directed to the one face 10 a side of the mounting substrate 10. It is mounted on the mounting substrate 10 through the material.

  With such a structure, the semiconductor device S2 can detect angular velocity in the directions of three axes of the X axis, the Y axis, and the Z axis. Further, by forming the semiconductor device S2 that detects physical quantities in the triaxial directions by using three semiconductor elements 100 having the same structure, a semiconductor device with less variation in characteristics of signal output in the axial direction can be obtained.

  Specifically, for example, a semiconductor device mounted with one semiconductor element configured to detect physical quantities in three axial directions is considered. In this case, the semiconductor device has a structure including three sensor units. However, since all the sensor units for detecting physical quantities in respective axial directions can not have the same structure, the X axis, Y axis, and Z axis are used. Variation occurs in the signal output characteristics in Therefore, in the semiconductor device on which one semiconductor element for detecting physical quantities in three axial directions is mounted, variations occur in the characteristics of signal output in the axial direction.

  On the other hand, since the semiconductor device S2 of the present embodiment has a configuration in which the three semiconductor elements 100 having the same structure are mounted, variation in the characteristics of signal output in each axial direction can be suppressed. Become.

  In addition, the semiconductor device S2 of the present embodiment uses the semiconductor elements 100 having the same structure, although the mounted states of the semiconductor elements 100 on the mounting substrate 10 are different. Therefore, the manufacturing cost of the semiconductor element 100 can be reduced by mass production, and the effect of becoming a low cost semiconductor device is also expected.

  Furthermore, in a semiconductor element configured to detect physical quantities in three axial directions with one element, no defect occurs in the sensor parts of the other two axes when a defect occurs in the sensor part of one axis. However, since the entire semiconductor element is defective, the yield tends to be low. On the other hand, the semiconductor device 100 that outputs a signal according to the physical quantity of only one axis has a higher yield than a semiconductor element including sensor units for three axes. From such a point of view as well, the semiconductor device S2 is expected to have an effect of lower cost than conventional.

  In the present embodiment, the semiconductor element 100 is a gyro sensor that detects an angular velocity. However, the semiconductor element 100 may be an acceleration sensor or a magnetic sensor, or may be another sensor.

(Other embodiments)
The semiconductor device and the method of manufacturing the same according to each of the above-described embodiments are merely examples of the present invention, and the present invention is not limited to the above-described embodiments and the scope described in the claims. Appropriate changes can be made within.

  For example, in each of the above embodiments, the example in which the semiconductor element 100 is mounted on the mounting substrate 10 via the bonding material 40 has been described, but the semiconductor element 100 uses the solder constituting the end surface electrode 212 and the side surface electrode 512 It may be mounted directly on the mounting substrate 10.

  In Modifications 1 and 2 of the above-described embodiment, the semiconductor device 100 has a device substrate and a cap substrate stacked, and an example in which a through electrode is not formed in the semiconductor substrate as a device substrate has been described. Without limitation, a through electrode may be formed on the device substrate as well. The semiconductor element 100 used for end face mounting may be formed with the end face electrode 212 or the side face electrode 512, and the arrangement of the through electrode and the sensor unit 30 may be appropriately changed.

  Specifically, the semiconductor element 100 configured by the device substrate and the cap substrate may have a configuration in which the end surface electrode is formed only on the device substrate, and has the configuration in which the end surface electrode is formed only on the cap substrate May be In addition, the semiconductor element 100 may be configured by a device substrate and a cap substrate, and an end surface electrode may be formed on both substrates. And while the penetration electrode 222 is formed in the 1st semiconductor substrate 20 in which the end face electrode was formed, the penetration electrode may be formed in the 2nd semiconductor substrate 50 if needed.

10 mounting substrate 20, 50 semiconductor substrate 20c end face 21, 51 groove 212 end face electrode 22 through hole 222 through electrode 50c side face

Claims (12)

A mounting substrate (10) having one surface (10a),
Semiconductor element (20) having a front surface (20a), a back surface (20b), and an end face (20c) connecting the front surface and the back surface, and a semiconductor element (30) having a sensor unit (30) for outputting a signal according to a physical quantity. 100) and,
In the semiconductor substrate, a groove (21) connecting the front surface and the back surface is formed on the end surface,
The groove portion is formed with an insulating film (211) covering the inner wall surface of the groove portion, and an end surface electrode (212) filled with the groove portion via the insulating film and having solder.
The semiconductor element is mounted on the one surface with the surface on which the end surface electrode is formed among the end surfaces facing the one surface, and is electrically connected to the mounting substrate via the end surface electrode. Semiconductor devices. The insulating film is a first insulating film,
The semiconductor substrate has a through hole (22) connecting the front surface and the back surface,
A second insulating film (221) covering the inner wall surface of the through hole, and the through electrode (222) filled with the through hole via the second insulating film and having a solder in the through hole; The semiconductor device according to claim 1, wherein is formed.   The semiconductor device according to claim 2, wherein the maximum width of the end face electrode and the maximum width of the through electrode are different from each other as viewed in the normal direction to the surface. The semiconductor substrate is a first semiconductor substrate,
The semiconductor device further comprises a second semiconductor substrate (50),
The semiconductor device according to any one of claims 1 to 3, wherein the second semiconductor substrate is configured by stacking the first semiconductor substrate and the second semiconductor substrate. The second semiconductor substrate has one surface (50a) and the other surface (50b) in a front-to-back relationship, and a side surface (50c) connecting the one surface to the other surface.
In the side surface, a second groove (51) connecting the one surface and the other surface is formed, with the groove being a first groove,
The second groove portion has the insulating film covering the inner wall surface of the first groove portion as a first insulating film, and the inner wall surface of the second groove portion is covered with a third insulating film (511) and has a solder A side electrode (512) filling the second groove through the third insulating film,
Of the side surfaces, the surface on which the side surface electrode is formed is arranged to face the one surface side together with the surface on which the end surface electrode is formed on the end surface,
The semiconductor device according to claim 4, wherein the semiconductor element is mounted on the one surface via the end surface electrode and the side surface electrode. In the semiconductor element, one of the first semiconductor substrate and the second semiconductor substrate is a sensor chip including the sensor unit, and the other is a cap.
The semiconductor device according to claim 4, wherein the sensor unit is disposed on a surface of the sensor chip that faces the cap, and is sealed by the cap.   The semiconductor device according to claim 6, wherein the first semiconductor substrate is a cap.   The semiconductor device according to any one of claims 1 to 7, wherein the semiconductor element is mounted on the one surface via a bonding material (40) made of a solder and a resin. The physical quantity is any one of acceleration, angular velocity and magnetism,
The semiconductor device according to any one of claims 1 to 8, wherein the semiconductor element functions as any one of an acceleration sensor, an angular velocity sensor, and a geomagnetic sensor. A method of manufacturing a semiconductor device according to any one of claims 1 to 9,
Preparing the mounting substrate;
It extends from the front surface or the back surface to the other surface, and covers a plurality of trenches (21A, 22) having different maximum width dimensions when viewed in the direction normal to the front surface or the back surface and the inner wall surfaces of the plurality of trenches. Preparing the semiconductor substrate on which the insulating film (21B, 221) is formed;
Filling the plurality of trenches with molten solder to solidify the solder after preparing the semiconductor substrate;
Forming part of the plurality of trenches filled with the solder, and forming the end surface electrode to which the solder is exposed at the end surface;
Forming the semiconductor element using the semiconductor substrate on which the end face electrode is formed;
Mounting the semiconductor element on the one surface of the mounting substrate in a state in which the surface of the end surface on which the end surface electrode is formed is directed to the one surface side of the mounting substrate; Method.   The filling of the plurality of trenches with molten solder is performed by applying the molten solder in a vacuum and then pressurizing the semiconductor substrate to which the molten solder is applied. The manufacturing method of the described semiconductor device.   The method for manufacturing a semiconductor device according to claim 10, wherein the end surface electrode is melted, and the melted end surface electrode is solidified again after the end surface electrode is formed.

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