JP2019035138A - Vapor deposition apparatus, vapor deposition method and method for manufacturing organic el display device - Google Patents

Abstract

To provide a vapor deposition apparatus that can prevent heat generation from a magnet chuck at the time of vapor deposition while making it hardly be influenced by a magnetic field at the time of positioning a vapor deposition substrate to a vapor deposition mask, and to provide a vapor deposition method and a method for manufacturing an organic EL display device.SOLUTION: A vapor deposition apparatus includes a magnet chuck 3 constituted of a permanent magnet 3A and an electromagnet 3B. The vapor deposition apparatus lowers an influence from a magnetic field by weakening the magnetic field of the permanent magnet using the electromagnet at the time of positioning a vapor deposition substrate 2 to a vapor deposition mask 1, and after the positioning, turns off the electromagnet and attracts the vapor deposition mask with a strong magnetic field only by the permanent magnet, thereby not generating heat.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a vapor deposition apparatus, a vapor deposition method, and a method for manufacturing an organic EL display apparatus, for example, for vapor-depositing an organic layer of an organic EL display apparatus.

  For example, when an organic EL display device is manufactured, a driving element such as a TFT, a planarization film, and an electrode are formed on a support substrate, and an organic layer is stacked on the electrode corresponding to each pixel. This organic layer is sensitive to moisture and cannot be etched. Therefore, the organic layer is laminated by stacking a support substrate (substrate to be deposited) and a vapor deposition mask and depositing an organic material through the opening of the vapor deposition mask. Then, a necessary organic material is laminated only on the necessary pixel electrode. If the deposition substrate and the deposition mask are not as close as possible, an organic layer is not formed only in an accurate region of the pixel. If the organic material is not deposited only on the accurate pixel region, the display image tends to be unclear. For this reason, a magnetic chuck is used that uses a magnetic material for the vapor deposition mask and interposes the vapor deposition substrate between the permanent magnet or electromagnet and the vapor deposition mask to bring the vapor deposition substrate and the vapor deposition mask close to each other (for example, Patent Document 1).

Japanese Patent Laid-Open No. 2008-024956

  Conventionally, a metal mask has been used as a vapor deposition mask. However, in recent years, in order to form a finer opening, a hybrid type vapor deposition mask in which the periphery of the mask opening formed of a resin film is supported by a metal support layer. Tends to be used. An evaporation mask with a small amount of magnetic material, such as a hybrid mask, cannot perform sufficient adsorption unless a stronger magnetic field (magnetic field) is used.

  As described above, a permanent magnet or an electromagnet is used as the magnet chuck. However, since a magnetic field is always generated in the permanent magnet, the magnetic field acts also when the deposition target substrate and the deposition mask are aligned before deposition. Therefore, if the magnetic field is strong, the vapor deposition mask is attracted to the vapor deposition substrate at the time of alignment, and it is difficult to perform alignment by moving only one of the vapor deposition substrate and the vapor deposition mask. In order to perform alignment without being greatly affected by the magnetic field, it is necessary to dispose the permanent magnets far away. However, if the permanent magnet is moved far away and aligned, and then the permanent magnet is brought closer to the evaporation target substrate, the evaporation mask may be laterally shifted and attracted in the moving process. If the vapor deposition mask is displaced when the permanent magnet is brought closer, fine vapor deposition cannot be performed. In addition, when a magnetic field of a permanent magnet exists, there is a problem that it is difficult to work when attaching or removing a vapor deposition mask or the like.

  On the other hand, when an electromagnet is used, the magnetic field can be made almost zero by turning off the application of current to the coil of the electromagnet, and the magnetic field can be generated and attracted by applying the current. Therefore, it is possible to apply a magnetic field after alignment without applying a magnetic field during alignment, etc., making it easy to align the deposition substrate with the deposition mask, and to attach and detach the deposition mask. Become. Moreover, a magnetic field can be generated only by applying a current without moving the electromagnet. Therefore, even if a magnetic field is generated after alignment, an accurate position can be maintained without moving either the evaporation mask or the evaporation target substrate.

  However, when attracting the deposition mask using an electromagnet, it is necessary to increase the current or increase the number of turns of the coil in order to generate a large magnetic field. This is because the magnetic field strength of the electromagnet is proportional to the product of the number of turns of the electromagnet coil and the current flowing through the coil. For this reason, in order to increase the magnetic field, the amount of heat generation increases regardless of whether the current is increased or the number of turns of the coil is increased. Originally, a large current flows through the electromagnet coil, so an electric wire with a low resistance is used for the electromagnet coil. However, due to the cost, aluminum wires tend to be used rather than copper wires. With the increase, the electromagnet generates more heat. Furthermore, when a core (iron core) is used for an electromagnet, the generated magnetic field can be increased, but an eddy current is generated in the core and heat is also generated by the eddy current.

  When heat is generated, the heat is conducted to the deposition substrate and the deposition mask, and the temperatures of the deposition substrate and the deposition mask are increased. Since the deposition target substrate and the deposition mask are made of different materials, their linear expansion coefficients are also different. For example, if the difference in linear expansion coefficient between the substrate to be deposited and the deposition mask is 3 ppm / ° C., a display panel having a length of 1 m causes a shift of 3 μm per 1 ° C. between the ends. For example, if one side of the size of one pixel is 60 μm, it is considered that only a deviation of about 15% is allowed at a resolution of 5.6 k. In this case, the limit of the deviation due to the difference in thermal expansion coefficient is 9 μm. In the above example, a 3 μm shift occurs with a temperature increase of 1 ° C., so a temperature increase of 3 ° C. is the limit. That is, it is necessary to suppress the temperature rise of the deposition target substrate and the deposition mask due to the temperature rise of the electromagnet to 3 ° C. or less.

  The present invention has been made to solve such a problem. While being hardly affected by a magnetic field when positioning a deposition substrate and a deposition mask, the deposition mask is strongly attracted during deposition while being deposited. An object of the present invention is to provide a vapor deposition apparatus and a vapor deposition method that can prevent a temperature rise of a vapor deposition mask or the like by a magnet chuck by using a magnet chuck that brings a substrate and a vapor deposition mask close to each other.

  Another object of the present invention is to provide a method for producing an organic EL display device having excellent display quality by using the vapor deposition method.

  The vapor deposition apparatus according to the first embodiment of the present invention includes a mask holder for holding a vapor deposition mask having a magnetic material, and a substrate to be vapor deposited in order to dispose the vapor deposition substrate in proximity to the vapor deposition mask held by the mask holder. A substrate holder for holding a vapor deposition substrate, a vapor deposition source provided on the opposite side of the vapor deposition mask from the vapor deposition mask and spaced from the vapor deposition mask, and a vapor deposition source for vaporizing or sublimating the vapor deposition material, and a target held by the substrate holder. A magnet chuck that is provided on a surface opposite to the vapor deposition mask of the vapor deposition substrate and attracts the vapor deposition mask with a magnetic force, and the magnet chuck includes a permanent magnet and an electromagnet.

  In the vapor deposition method of the second embodiment of the present invention, a vapor deposition mask having a magnetic material, a deposition target substrate, and a magnet chuck that attracts the vapor deposition mask are superposed, and by suction of the vapor deposition mask by the magnet chuck, Depositing the vapor deposition material on the vapor deposition substrate by scattering the vapor deposition material from a vapor deposition source disposed away from the vapor deposition mask, and bringing the vapor deposition substrate and the vapor deposition mask close to each other. The magnet chuck has a permanent magnet and an electromagnet, and in order to weaken the magnetic field of the permanent magnet when aligning the deposition substrate and the deposition mask, the direction of the magnetic field of the permanent magnet is opposite to that of the permanent magnet. The alignment is performed while the magnetic field is applied by the electromagnet, and the magnetic field of the electromagnet is turned off after the alignment. It includes aspirating the mask.

  In the method for manufacturing an organic EL display device according to the third embodiment of the present invention, at least a TFT and a first electrode are formed on a support substrate, and an organic material is deposited on the surface of the support substrate using the above-described deposition method. This includes forming a laminated film of organic layers and forming a second electrode on the laminated film.

  According to the vapor deposition apparatus and vapor deposition method of the first and second embodiments of the present invention, the magnet chuck includes the permanent magnet and the electromagnet. For this reason, at the time of alignment between the evaporation target substrate and the evaporation mask, the magnetic field of the permanent magnet can be weakened by the electromagnet, thereby reducing the influence of the magnetic field. After the alignment, the deposition mask can be sufficiently adsorbed by the permanent magnet by turning off the electromagnet. Therefore, the electromagnet does not operate during vapor deposition, and no heat is generated, and the vapor deposition mask can be attracted by the strong magnetic field of the permanent magnet. As a result, thermal expansion of the deposition target substrate and the deposition mask is also suppressed. As a result, a precise vapor deposition pattern can be obtained. As a result, even when the organic layer is deposited, the deposition accuracy is improved, and the organic layer is deposited in an accurate pattern. When used for manufacturing an organic EL display device, a high-definition display panel can be obtained with fine pixels.

It is a figure which shows the schematic of the vapor deposition apparatus of one Embodiment of this invention. It is the schematic of the vapor deposition apparatus of the other embodiment of the vapor deposition apparatus shown by FIG. It is the schematic of the vapor deposition apparatus of further another embodiment of the vapor deposition apparatus shown by FIG. It is the schematic of a part of magnet chuck of other embodiment of the vapor deposition apparatus shown by FIG. It is a figure explaining the structural example of the heat pipe shown by FIG.3 and FIG.4. It is explanatory drawing of the heat pipe for demonstrating other embodiment of joining of an electromagnet and a heat pipe. It is a top view of the heat absorption part of FIG. 6A. It is explanatory drawing of the wick structure of FIG. 6B. It is a schematic diagram which shows the state which incorporated the heat pipe of FIG. 6A in the vapor deposition apparatus. It is a figure which shows an example of drive devices, such as a vapor deposition mask. It is a figure which shows the structural example which connects a heat pipe to a vacuum chamber. It is an enlarged view of an example of a vapor deposition mask. It is a figure which shows the vapor deposition process by the manufacturing method of the organic electroluminescent display apparatus of this invention. It is a figure which shows the state by which the organic layer was laminated | stacked with the manufacturing method of the organic electroluminescence display of this invention.

  Next, the vapor deposition apparatus and vapor deposition method of the first and second embodiments of the present invention will be described with reference to the drawings. As shown in FIG. 1, the vapor deposition apparatus according to this embodiment includes a mask holder 15 that holds a vapor deposition mask 1 having a magnetic material, and a vapor deposition substrate 2 that is close to the vapor deposition mask 1 that is held by the mask holder 15. A substrate holder 29 for holding the deposition target substrate 2 and a deposition source 5 provided on the opposite side of the deposition mask 1 from the deposition mask 2 and spaced from the deposition mask 1 to vaporize or sublimate the deposition material 51. The magnet chuck 3 is provided on the opposite surface of the deposition substrate 2 held by the substrate holder 29 and attracts the deposition mask 1 with a magnetic force. The magnet chuck 3 includes a permanent magnet 3A and an electromagnet 3B. And have. The mask holder 15, the substrate holder 29, and the like are not shown in FIG. 1, but can be moved up and down by the driving device 6 at the tip as described later with reference to FIG. 7A, for example.

(Magnet chuck)
Although the schematic structure of the vapor deposition apparatus will be described later, in the vapor deposition apparatus, as shown in FIG. 1, the vapor deposition mask 1 and the deposition target substrate 2 are arranged side by side in the vertical direction. A deposition material is deposited on the deposition substrate 2 in accordance with the pattern of the openings of the deposition mask 1. Therefore, it is convenient for the deposition mask 1 and the deposition substrate 2 to be in close contact with each other so that the pattern of the deposition mask 1 can be accurately copied onto the deposition substrate 2. In order to obtain this adhesion (good accessibility), a magnet made of a permanent magnet or an electromagnet is disposed above the surface opposite to the vapor deposition mask 1 of the substrate 2 to be vapor deposited, and the vapor deposition mask 1 having a magnetic material by the magnetic force thereof. A suction method is conventionally used. That is, in the conventional method, only one of a permanent magnet or an electromagnet is used as the magnetic attraction method. However, as mentioned above, both have advantages and disadvantages.

  In the present embodiment, both the permanent magnet 3A and the electromagnet 3B are provided as the magnetic force generating means of the magnet chuck 3 for magnetic attraction. When the vapor deposition mask is attracted during vapor deposition, the permanent magnet 3A is attracted and attracted. When mounting the deposition target substrate 2 or the like, or when aligning the deposition target substrate 2 and the deposition mask 1, a magnetic field opposite to the direction of the magnetic field of the permanent magnet 3A is applied by the electromagnet 3B. The generated magnetic field acts on the deposition mask 1 to weaken the magnetic field. In other words, the magnet chuck 3 of the present embodiment has a suction structure that can weaken the magnetic field of the permanent magnet 3A by using an electromagnet when a magnetic field is unnecessary while attracting the vapor deposition mask with the permanent magnet 3A. The magnet chuck 3 is meant to include a permanent magnet 3A and an electromagnet 3B, a covering 34, a yoke 33 (see FIG. 4) described later, and the like. The electromagnet 3B includes a core 31 and a coil 32. As the permanent magnet 3A, a normal permanent magnet can be used, but a permanent magnet having a large holding force is preferable. The electromagnet 3B becomes the electromagnet 3B if there is a coil 32 around which an electric wire is wound. However, it is preferable that the core (iron core) 31 made of iron or the like is provided in the coil 32 because the magnetic field can be strengthened.

  As shown in FIG. 1, the permanent magnets 3A and the electromagnets 3B may be arranged such that the permanent magnets 3A and the electromagnets 3B are arranged side by side in a horizontal direction (a direction parallel to the surface of the vapor deposition mask 1). As shown in FIG. 6, the permanent magnets 3A may be arranged side by side in the axial direction (perpendicular to the surface of the vapor deposition mask 1). In the case of the structure shown in FIG. 1, it is preferable to connect the ends of the permanent magnet 3 </ b> A and the electromagnet 3 </ b> B opposite to the vapor deposition mask 1 with a magnetic plate 35 made of a soft magnetic material. The soft magnetic material is particularly preferable because it has a small coercive force and a high magnetic permeability, and magnetization by the electromagnet 3B hardly remains. Examples of the soft magnetic material include iron, silicon steel (a material obtained by adding a small amount of Si to iron and not containing carbon), and the like, which is relatively inexpensive and is particularly preferable as the magnetic plate 35 of the present embodiment. . Other examples of the soft magnetic material include permalloy (an alloy of Ni and Fe).

  In the state of being connected by the magnetic plate 35, when a current having a polarity as shown in the drawing is passed through the coil of the electromagnet 3B, reverse lines of magnetic force are generated in the permanent magnet 3A and the electromagnet 3B. The magnetic field is weakened. In addition, each of these polarities may be a polarity opposite to the illustrated polarity. In the case of the arrangement shown in FIGS. 1 and 2, the permanent magnet 3 </ b> A and the electromagnet 3 </ b> B repel each other, so that they need to be securely fixed by the covering 34 or the like so that they are not separated.

  As shown in FIG. 1, when the permanent magnet 3A and the electromagnet 3B are arranged side by side, the magnetic plate 35 is eliminated and the electromagnet 3B is arranged as close as possible to the permanent magnet 3A so as to surround the permanent magnet 3A. May be. In this case, the polarity of the electromagnet 3B is different from the polarity of the permanent magnet 3A, and the electromagnet 3B facing the touch plate 4 with respect to the polarity N of the permanent magnet 3A on the surface facing the touch plate 4 shown in FIG. The polarity of the surface needs to be S. By doing so, even if the polarity of the permanent magnet 3A cannot be completely canceled, it can be weakened. As this end structure, an electric wire can be wound around the rod-shaped permanent magnet 3A, or a coil 32 can be wound around a cylindrical body and covered with the permanent magnet 3A to generate a magnetic field opposite to the magnetic field of the permanent magnet 3A. If it does so, the magnetic field of 3 A of permanent magnets and the magnetic field of the electromagnet 3B will become coaxial, and it will be easy to cancel. Note that the electromagnet 3 </ b> B is configured only by the coil 32 without the core 31. The polarity of the electromagnet 3B described above is the direction of the current flowing through the coil 32 of the electromagnet 3B, and the direction in which the right screw advances is the N pole based on the right screw rule. Therefore, if the direction of the current is adjusted according to the direction of the magnetic field of the permanent magnet 3A, the direction of the magnetic field of the electromagnet 3B can be freely set.

  The application of the voltage is changed by a control circuit of a power supply circuit (not shown), and the direction of the magnetic field can be selected. The intensity of the magnetic field by the electromagnet 3B does not need to completely cancel the magnetic field of the permanent magnet 3A, and may be a magnetic field that is about 1/10 or more and about ½ or less of the magnetic field strength of the permanent magnet 3A. This is because the purpose is to weaken the strong suction force during alignment.

  As described above, the permanent magnet 3 </ b> A and the electromagnet 3 </ b> B are arranged so as to generate opposite magnetic fields, so that when the electromagnet 3 </ b> B is operated, the magnetic field of the permanent magnet 3 </ b> A is canceled. As a result, when the deposition target substrate 2 and the deposition mask 1 are exchanged or when the deposition target substrate 2 and the deposition mask 1 are aligned, the electromagnet 3B can be operated to weaken the influence of the magnetic field. On the other hand, after the alignment between the deposition target substrate 2 and the deposition mask 1 is completed, the current application to the electromagnet 3B is turned off so that only the permanent magnet 3A operates. By doing so, the magnetic field can be strengthened only by operating the power source without moving the magnet chuck 3. When the current of the electromagnet 3B is turned off in the structure shown in FIGS. 1 and 2, the N and S shown in FIGS. 1 and 2 disappear, and the core 31 of the electromagnet 3B acts as a simple magnetic material. As a result, the structure shown in FIG. 1 operates in the same manner as a horseshoe-shaped permanent magnet, and a strong magnetic field of the permanent magnet 3A is applied toward the vapor deposition mask 1. In the structure shown in FIG. 2, an S pole is generated on the surface of the core 31 opposite to the permanent magnet 3A. As a result, there is almost no need to move the magnet chuck 3 after the alignment of the vapor deposition mask 1 and the vapor deposition substrate 2, so that the relative movement between the vapor deposition substrate 2 and the vapor deposition mask 1 does not occur sufficiently. Can be adsorbed.

  The time for mounting the deposition target substrate 2 and the relative alignment with the deposition mask 1 is about 10 seconds at the maximum, which is much shorter than the deposition time of about 120 seconds. Therefore, the Joule heat generated by the current flowing through the coil of the electromagnet 3B is very small, and the temperature rise of the deposition target substrate 2 and the deposition mask 1 is greatly suppressed. In addition, even when the deposition is completed and the deposition target substrate 2 is detached, it is preferable to work by driving the electromagnet 3B to weaken the magnetic field. In this case, since fine work such as alignment is not required, the time is further shortened and the heat generation of the magnet chuck 3 is suppressed. In short, since the operation time of the electromagnet 3B as the heat generation source is very short, the influence of the heat generation of the electromagnet 3B on the thermal expansion of the vapor deposition mask 1 and the like is suppressed as much as possible.

  On the other hand, in the vapor deposition apparatus, vapor deposition is performed continuously by replacing the vapor deposition substrate 2 one after another. For this reason, even though heat generation is small, there is a concern about the accumulation of heat. However, the vapor deposition mask 1 is hardly adsorbed by the magnet chuck 3 during the operation of the relative alignment (so-called alamante) between the vapor deposition substrate 2 and the vapor deposition mask 1. They are not in close contact with the vapor deposition mask 1 and are slightly separated from each other. Therefore, even if the temperature of the deposition substrate 2 rises, the heat is not immediately transmitted to the deposition mask 1 and the heat is not accumulated in the deposition mask 1, and the deposition substrate 2 is replaced after the deposition. Therefore, the deposition target substrate 2 that is cooled each time is carried in, and heat accumulation on the deposition target substrate 2 hardly occurs. In particular, if the substrate holder 29 that holds the deposition substrate 2 and the mask holder 15 that holds the deposition mask 1 are not in contact with each other and are thermally isolated by, for example, a heat insulating member, heat to the deposition mask 1 is obtained. The accumulation of is reduced. An example of this specific structure will be described later with reference to FIG. 7A. That is, in this embodiment, if there is no direct heat transfer from the deposition substrate 2 (that is, when the deposition mask 1 is slightly lifted from the deposition substrate 2), the deposition mask 1 itself is unlikely to increase in temperature. Become a structure. As a result, by suppressing the heat conduction between the substrate holder 29 and the mask holder 15, it is hardly affected by heat, in other words, the displacement of the deposition pattern due to the thermal expansion of the deposition mask 1 is reduced. It becomes easy to be vapor deposition equipment.

  On the other hand, when a sufficient attractive force is not obtained only by the magnetic force of the permanent magnet 3A, a power supply circuit (not shown) is set so that the magnetic field of the electromagnet 3B is aligned with the direction of the magnetic field of the permanent magnet 3A after alignment. The current direction can be changed by the control circuit. In this case, since it is an auxiliary to the permanent magnet 3A, the current can be 1/10 or less of the current when the necessary magnetic field is obtained only by the electromagnet 3B, and the heat generation is greatly suppressed. However, when the temperature of the magnet chuck 3 rises due to the generation of Joule heat, the accumulation of heat, etc. during the mounting and positioning of the deposition target substrate 2 and the like, cooling of the magnet chuck 3 is preferably used in combination. . The cooling structure of the magnet chuck 3 will be described later.

  The upper and lower relationship of the superposition of the permanent magnet 3A and the electromagnet 3B shown in FIG. 2 is provided so that the permanent magnet 3A faces the touch plate 4 (deposition substrate 2) in the example shown in FIG. An electromagnet 3B is provided on the surface of the permanent magnet 3A opposite to the deposition substrate 2. However, this vertical relationship is not limited to this example. However, as described above, if there is a risk of heat generation, cooling is necessary. When cooling by the heat pipe 7 (refer FIG. 3) mentioned later, the vertical relationship shown by FIG. 2 is preferable.

  When the electromagnet 3B is used and the current is turned on / off, when the current suddenly increases or the current suddenly changes to 0, electromagnetic induction occurs and the current flows through the closed circuit. For example, when an organic layer of an organic EL display device is deposited, a closed circuit such as a thin film transistor (TFT) for driving is formed on a support substrate. Moreover, when an organic layer is formed and both electrodes are formed, a closed circuit is formed. When a current due to electromagnetic induction flows through the closed circuit, elements such as TFTs and organic layers are destroyed. The generation of this electromagnetic induction is caused by a rapid change of the magnetic field, so that a rapid change of the magnetic field by the electromagnet must be avoided. From this point of view, a capacitor of, for example, about 5000 μF or more is inserted in parallel with the electromagnet 3B in the power supply circuit (not shown) of the electromagnet 3B, a plurality of terminals are provided on the coil, and the coil for applying current is gradually increased or decreased. The problem of electromagnetic induction can be solved by applying the current rising slowly. However, in this embodiment, since the magnetic field of the direction which cancels the magnetic field by 3 A of permanent magnets is applied, it is thought that the influence of this electromagnetic induction is also small.

(Schematic configuration of vapor deposition equipment)
A schematic view of one aspect of the vapor deposition apparatus of one embodiment of the present invention is shown in FIG. The mask holder 15 and the substrate holder 29 are vertically moved so that the vapor deposition mask 1 and the vapor deposition substrate 2 are disposed close to each other inside the vacuum chamber 8 (see FIG. 3; omitted in FIGS. 1 and 2). It is provided so that it can move to. The substrate holder 29 is connected to the driving device 6 as shown in FIG. 7A, for example, as shown in FIG. In the case of replacement of the deposition target substrate 2 or the like, the deposition target substrate 2 carried into the vacuum chamber 8 by the robot arm is received by the hook-shaped arm, and the substrate holder 29 until the deposition target substrate 2 comes close to the deposition mask 1. Descends. The mask holder 15 has substantially the same configuration. An imaging device (not shown) is also provided so that alignment can be performed.

  The drive device 6 can be formed in various configurations. For example, as shown in FIG. 7A, an example of the mask holder 15, a rack 61 is attached to the tip of the mask holder 15, and the pinion 62 is rotated by a motor 63. The mask holder 15 can be moved up and down. The driving device 6 can be formed by attaching a housing 67 with a screw 68 to a support plate 65 attached in the chamber 8. In the example shown in FIG. 7A to prevent heat conduction between the mask holder 15 and the substrate holder 29 described above, a spacer 66 (heat insulating member) formed of a heat insulating material between the housing 67 and the support plate 65. Is intervened. In this case, the screw 68 is preferably not made of metal but made of plastic that is difficult to transmit heat. As a result, not only the mask holder 15 but also the substrate holder 29 is attached to the same support plate 65 with the same structure, since the mask holder 15 and the substrate holder 29 are provided with a heat insulating member (spacer 66), Is sufficiently blocked.

  The touch plate 4 is supported by a support frame 41 and is connected via a support frame 41 to a driving device that lowers the touch plate 4 until it comes into contact with the deposition target substrate 2. When the touch plate 4 is lowered, the deposition target substrate 2 is flattened and pressed so as not to be deformed. Although the touch plate 4 is not shown in the figure, cooling water can flow inside. Further, a vapor deposition source 5 is provided on the opposite side of the vapor deposition mask 1 from the vapor deposition substrate 2 so that the vapor deposition material 51 can be evaporated or sublimated.

  In a state where the touch plate 4 and the magnet chuck 3 are lowered and the touch plate 4 and the deposition substrate 2 are in contact with each other, the deposition substrate 2 and the deposition mask 1 are aligned. While aligning the vapor deposition mask 1 and the vapor deposition substrate 2, while imaging the alignment marks formed on the vapor deposition mask 1 and the vapor deposition substrate 2, the relative relationship between the vapor deposition substrate 2 and the vapor deposition mask 1 is obtained. A move is made. Therefore, the vapor deposition apparatus also includes a fine movement device such as the vapor deposition substrate 2. In this alignment, it is preferable that there is no strong suction by the magnet chuck 3. In the present embodiment, as described above, while being attracted by the permanent magnet 3A, the electromagnet 3B is also driven at the time of this alignment to weaken the attracting force. Therefore, the deposition target substrate 2 and the deposition mask 1 are in strong contact with each other and do not easily move. Easy to perform accurate position adjustment in a short time. Further, after the position adjustment is completed, the deposition mask 1 is attracted toward the deposition target substrate 2 by the strong attraction force of the permanent magnet 3A only by turning off the power supply of the electromagnet 3B.

  In the example shown in FIG. 1, the cores 31 and the coils 32 of the permanent magnet 3 </ b> A and the electromagnet 3 </ b> B are covered with the covering 34. As a result, since the unit magnet (a pair of the permanent magnet 3A and the electromagnet 3B) is fixed, handling such as installation becomes easy. Further, when cooling by a heat pipe 7 (see FIG. 3) described later is performed, contact between the heat pipe 7 and the covering 34 of the magnet chuck 3 can be easily obtained in a wide area. In addition, since the heat generated in the coil 32 is easily transferred from the surroundings to the covering 34, the cooling effect is easily improved. Further, the vapor deposition mask 1 has a structure in which a frame 14 attached around the vapor deposition mask 1 is held by a mask holder 15 as shown in FIG. As a result, the vapor deposition mask 1 is held without causing deformation.

  As described above, the magnet chuck 3 includes the permanent magnet 3A and the electromagnet 3B. Various electromagnets 3B, such as those having a core 31, those having a yoke 33 (see FIG. 4), and those having a covering 34, can be used. The outer shape of the core 31 may be a polygon such as a quadrangle or a circle. For example, when the size of the vapor deposition mask 1 is about 1.5 m × 1.8 m, the cross section of the unit magnet chuck 3 (set of the unit permanent magnet 3A and the unit electromagnet 3B) shown in FIG. 2 is about 5 cm square. As shown in FIG. 2, a plurality of electromagnets 3B having cores 31 of the size can be arranged side by side in accordance with the size of the vapor deposition mask 1 (in FIG. 2, the horizontal direction is reduced and the number of unit electromagnets In addition, the permanent magnet 3A and the electromagnet 3B do not have to correspond 1: 1, respectively, and the number of electromagnets may be small). Although the connection of the coil of the electromagnet 3B is not illustrated in the example shown in FIGS. 1-2, the coil 32 wound around each core 31 may be connected in series, or may be connected in parallel. Further, several units of the electromagnet 3B may be connected in series. A current may be applied independently to a part of the unit electromagnet.

  As shown in FIG. 8, the vapor deposition mask 1 includes a resin film 11, a metal support layer 12, and a frame (frame body) 14 formed around the resin film 11. The vapor deposition mask 1 is shown in FIG. 1. Thus, the frame 14 is placed on the mask holder 15. A magnetic material is used for the metal support layer 12. As a result, an attractive force acts between the permanent magnet 3 </ b> A and is attracted by sandwiching the deposition target substrate 2. The metal support layer 12 may be made of a ferromagnetic material. In this case, the metal support layer 12 is magnetized (a state in which strong magnetization remains even if the external magnetic field is removed) by the strong magnetic field of the permanent magnet 3A. The vapor deposition mask 1 may be formed by one large panel such as a large television, or a plurality of small panels such as smartphones may be combined into one vapor deposition mask.

  As the metal support layer 12, for example, Fe, Co, Ni, Mn, or an alloy thereof can be used. Among them, invar (Fe and Ni alloy) is particularly preferable because of a small difference in linear expansion coefficient from the deposition target substrate 2 and almost no expansion due to heat. The metal support layer 12 has a thickness of about 5 μm to 30 μm.

  In FIG. 8, the opening 11a of the resin film 11 and the opening 12a of the metal support layer 12 have a tapered shape that tapers toward the deposition target substrate 2 (see FIG. 1). The reason is that when the vapor deposition material is deposited, it does not become a shadow of the vapor deposition material that scatters. In addition, the vapor deposition source 5 can use various vapor deposition sources 5, such as dot shape, line shape, and planar shape. For example, a deposition source 5 called a line source in which crucibles are arranged in a line with the width of the deposition mask 1 (the length in the direction perpendicular to the paper surface in FIG. 1) is scanned from the left end to the right end of the paper surface, for example. As a result, vapor deposition is performed on the entire surface of the substrate 2 to be deposited. Accordingly, the vapor deposition material scatters from various directions, and the above-described taper is formed in order to reach the vapor deposition substrate 2 without being blocked even by the vapor deposition material coming from an oblique direction.

  The example shown in FIG. 2 is the same except for the arrangement relationship between the permanent magnet 3A and the electromagnet 3B of the magnet chuck 3. The magnet chuck 3 shown in FIG. 2 is different from the magnet chuck 3 in that the permanent magnet 3A and the electromagnet 3B are stacked in the axial direction, and the other configurations are the same as those in FIG. The description is omitted. Even when arranged vertically in this way, the magnetic field of the permanent magnet 3A as a whole is canceled by the magnetic field of the electromagnet 3B and becomes weak. This structure is preferable because many permanent magnets 3A can be arranged. However, in this case as well as the magnetic plate 35 of FIG. 1, the repulsive force between the permanent magnet 3A and the electromagnet 3B acts, so it is necessary to fix them firmly. From this point of view, it is preferable that an electromagnet is formed around the permanent magnet 3A as described above.

  As described above, the numbers of the permanent magnets 3A and the electromagnets 3B do not have to be the same, and the absolute values of the reverse magnetic fields may not be the same. In short, if the magnetic field of the permanent magnet 3A is weakened to some extent, the influence of the magnetic field such as alignment can be avoided. In addition, when the number of electromagnets 3B is small and the magnetic field to be canceled is too small, the current can be increased to adjust the magnetic field of the electromagnet 3B. Further, in the example shown in FIG. 2, the permanent magnet 3A and the electromagnet 3B are arranged side by side. For example, the electromagnet 3B is shifted by a half pitch and the electromagnet 3B is placed near the intersection of the diagonal lines of the four permanent magnets 3A. It can also be configured to be arranged.

  3 to 4 are examples in which a cooling structure is formed on the magnet chuck 3. That is, this embodiment is characterized in that a cooling means for cooling the magnet chuck 3 is provided. Therefore, other description is omitted in the description of the cooling structure. As described above, in the present embodiment, even if the electromagnet 3B is included, since the operation is very short, the problem of heat generation is greatly suppressed. Further, as described above, if the substrate holder 29 and the mask holder 15 are thermally cut off, the deposition target substrate 2 is replaced one after another, so that thermal accumulation hardly occurs. However, if the temperature of the vapor deposition substrate 2 rises during alignment, the vapor deposition substrate 2 and the vapor deposition mask 1 are in close contact with each other during vapor deposition. Even when the deposition substrate 2 is replaced and deposition is continuously performed, the operation of the electromagnet 3B for the next deposition substrate 2 is performed before the slight heat generated in the deposition mask 1 is completely cooled. There may be similar heat conduction possibilities. Further, when the magnetic force of the permanent magnet 3A is weak, it may be supplemented by the magnetic field of the electromagnet 3B as described above. In such a case, the current may be small, but the current is allowed to flow during the deposition time.

  On the other hand, when the temperature of the electromagnet 3B rises, the temperature of the vapor deposition substrate 2 and the vapor deposition mask 1 arranged nearby increases due to the conduction of heat. When the temperature of the deposition substrate 2 or the deposition mask 1 rises, both materials are different and the coefficient of thermal expansion (linear expansion coefficient) is different, so that the deviation between the opening pattern of the deposition mask 1 and the deposition position of the deposition substrate 2 is shifted. Can occur. In this case, deposition of an accurate pattern is hindered, pixels are unclear, and a fine display panel cannot be obtained. Therefore, the temperature rise of the magnet chuck 3 must be avoided as much as possible. In this case, since the inside of the vacuum chamber 8 is in a vacuum atmosphere, it is difficult to effectively release the heat of the magnet chuck 3. However, as a result of repeated investigations, the present inventors have investigated the heat pipe 7 (see FIG. 5). It was found that heat can be dissipated very efficiently even with a slight increase in temperature. In this case, the efficiency of heat dissipation was improved by bringing the heat pipe 7 into contact with the magnet chuck 3 in the widest possible area, at least the area of the inner diameter of the coil 32 of the electromagnet 3B.

(Magnet chuck cooling structure)
As a typical example, the heat pipe 7 has a structure as shown in FIG. That is, for example, a wick 76 that moves liquid by capillary action is formed on the inner wall of a vacuum-sealed pipe (case; container) 75 that is made of copper or the like. A vacuum (low pressure) structure in which a small amount is enclosed. With this structure, when the endothermic part 71 as one end is heated by ambient heat, the working fluid evaporates and steam is generated, and the internal pressure of the pipe 75 increases. The vapor passes through the space portion 73 and is condensed and liquefied in a heat radiating portion (cooling portion) 72 which is the other end portion. The liquefied hydraulic fluid travels toward the heat absorbing portion 71 by capillary action in the wick 76 formed on the inner wall of the pipe 75. Due to such latent heat transfer accompanying evaporation and condensation, a large amount of heat is transported from the heat absorbing portion 71 to the heat radiating portion 72 even with a small temperature difference, and the heat conduction of the heat pipe 7 is 100 compared to the heat conduction of a copper round bar. It is said to reach twice as much. The wick 76 only needs to have a structure in which a liquid proceeds by capillary action, and may have a structure such as a wire net, a porous body, or a sponge.

  As described above, when the heat pipe 7 is disposed sideways, the condensed liquid passes through the wick 76 and is carried to the heat absorbing unit 71. However, for example, when the heat pipe 7 is arranged vertically (vertical direction) and the lower part is the heat absorbing part 71 (that is, the high temperature part is arranged at the lower end of the heat pipe 7), The liquid evaporates, and the vapor rises upward and condenses in the heat radiating portion 72. In this case, even if there is no wick 76, the liquefied liquid falls by its own weight and returns to the heat absorption unit 71. This is said to be thermosiphon type. In this embodiment, any type of heat pipe 7 can be used. For example, even when the heat pipe 7 is arranged vertically, the wick 76 may exist.

  Such a heat pipe 7 is not limited to a rod-like shape as shown in FIG. 5, but may be formed in a flat shape (flat plate shape), for example. If it is formed in a flat shape, it can be rolled up and embedded in the core 31 of the electromagnet 3B. By doing so, the magnetic field lines in the core 31 are hardly affected. Further, for example, as shown in pages 41 to 56 of Thermal Science & Engineering Vol. 2 No. 3 (2015), which will be described later, a planar heat absorption part is formed. It is also possible to provide the entire magnet chuck 3 on the entire front surface (surface facing the deposition target substrate 2). An example in which the heat pipe 7 having a simple rod-like structure is joined to the magnet chuck 3 is shown in FIGS.

  The example shown in FIG. 3 has a structure similar to that of the vapor deposition apparatus shown in FIG. 1, and has a structure in which the permanent magnet 3 </ b> A and the electromagnet 3 </ b> B are arranged in the axial direction and the entire periphery is covered with the covering 34. The heat pipe 7 is provided in contact with the upper surface of the core 31 of the electromagnet 3B. The diameter of the bottom surface of the heat pipe 7 and the cross-sectional area of the inner diameter of the coil 32 of the electromagnet 3B are substantially the same, but the heat absorbing portion 71 of the heat pipe 7 is embedded in the covering 34. Therefore, in addition to the contact area with the core 31, the area of the side surface of the heat pipe 7 embedded in the covering 34 is also the contact area. The heat dissipating part 72, which is the end opposite to the heat absorbing part 71 of the heat pipe 7, is led out of the vacuum chamber 8, put into the exhaust heat tank 95, and cooled by air cooling, water cooling or the like.

  When the deposition target substrate 2 or the deposition mask 1 is replaced, the magnet chuck 3 and the touch plate 4 need to be lifted up. Moreover, it needs to be lowered again after replacement. Therefore, the heat pipe 7 cannot be directly fixed to the wall surface of the vacuum chamber 8 by airtight sealing. In such a case, as shown in FIG. 7B, it is preferable to be fixed to the vacuum chamber 8 via a bellows 96. The distance that the magnet chuck 3 and the like can be lifted when the deposition target substrate 2 and the like are exchanged is about 100 mm or less, and any bellows 96 that can be expanded and contracted to that extent is acceptable.

  However, the magnet chuck 3 and the touch plate 4 may have a fixed structure, and the deposition mask 1 and the deposition target substrate 2 may be lowered to replace the deposition target substrate 2, and then lifted and placed at a predetermined position. it can. With such a structure, the heat pipe 7 can be directly bonded to the vacuum chamber 8 and sealed without using the bellows 96. When the bellows 96 is used, if the bellows 96 is damaged, the inside of the vacuum chamber 8 is exposed to the atmosphere and the inner wall becomes dirty. If the inner wall of the vacuum chamber 8 becomes dirty, it becomes a gas source, and thus cleaning is necessary. Therefore, a double structure is preferable. For example, in the structure shown in FIG. 3, a structure in which the heat pipe 7 between the outer wall of the heat exhaust tank 95 and the outer wall of the vacuum chamber 8 is covered with a cover (not shown) so as to include the bellows 96 (see FIG. 7B). It is preferable to make it.

  The structure shown in FIG. 4 is a diagram showing a modification of the embodiment shown in FIG. In this example, a permanent magnet 3A and an electromagnet 3B connected in the direction perpendicular to the axis are connected to one end of a C-shaped yoke 33 (which becomes an E-shaped yoke by the core 31 of the permanent magnet 3A and the electromagnet 3B). The end surface of the yoke 33 is arranged on substantially the same surface as the first end surface (the surface facing the deposition target substrate 2) which is the surface opposite to the surface to which the magnet 3A is connected. With such a structure, the magnetic lines of force of the permanent magnet 3A pass through the core 31 and the yoke 33 of the electromagnet 3B having a small magnetic resistance from the south pole in the example shown in the figure on the surface opposite to the first end surface of the permanent magnet 3A. To the end surface of the yoke 33. As a result, strong lines of magnetic force are formed between the first end surface of the permanent magnet 3A and the end surface of the yoke 33, and a strong magnetic field can be applied to the vapor deposition mask 1 provided in the vicinity thereof. In this case, the yoke 33 also becomes a part of the magnet chuck 3. The yoke 33 is made of a magnetic material such as iron similar to the core 31.

  According to the example shown in FIG. 4, when the magnet chuck 3 is cooled by the heat pipe 7 as in the above example, the contact area between the heat pipe 7 and the magnet chuck 3 can be increased. That is, the width of the yoke 33 can be made larger than the width (diameter) of the core 31. Therefore, the contact area between the heat pipe 7 and the magnetic chuck 3 can be increased. By increasing the contact area, the amount of heat of the magnet chuck 3 can be further released through the heat pipe 7. Further, as shown in FIG. 4, the covering including the yoke 33 is covered with the covering 34 described above, so that the heat generated in the coil 32 can be more effectively transferred to the covering 34. By embedding the heat pipe 7 inside the covering 34, the contact area between the heat pipe 7 and the magnet chuck 3 can be further increased. As a result, the heat of the magnet chuck 3 can be effectively released.

  The yoke 33 is not limited to the structure in which the electromagnet 3B is provided on the permanent magnet 3A and the yoke 33 is provided thereon. The electromagnet 3B may be provided to face the touch plate 4 (deposition substrate 2), the permanent magnet 3A may be disposed thereon, and the yoke 33 may be provided thereon. However, as described above, if the heat pipe 7 is provided, the arrangement shown in FIG. 4 is preferable. This is because the purpose of the electromagnet 3B is to generate heat and release the heat.

  In each of the above-described examples, the magnet chuck 3 is entirely covered with the covering 34. However, if the covering is covered with the covering 34, the handling is easy, and the cooling is performed by the heat pipe 7. Has the advantage that the heat of the coil is also easily released. However, the covering 34 may be omitted. When cooling by the heat pipe 7, even if there is no covering 34, the contact area between the heat pipe 7 and the magnet chuck 3 can be increased by increasing the width of the yoke 33 as described above. Further, by embedding a part of the heat pipe 7 in the yoke 33 or the core 31, the contact area can be increased.

  6A to 6D show another embodiment of the cooling structure, in which the heat pipe 7 is a loop type heat shown in pages 41 to 56 of the aforementioned Thermal Science & Engineering Vol. 2 No. 3 (2015). It has the same structure as a pipe. About this loop type heat pipe 7, FIGS. 6A to 6C show a side view thereof, an explanatory plan view of a heat absorbing portion, and a structural example of a wick, respectively. 6B, a plurality of wicks 80 (six in the example shown in FIG. 6B) are embedded in a case 81 made of copper or the like. 6C, each wick 80 has a wick core 83 at the center, and a wick 82 is formed in a blade shape (gear shape) around the wick core. A groove 84 is formed between each of the wicks 82 to form a passage for steam.

  For example, the wick 82 can be formed to a size of about 8 mm × 9 mm (the thickness of the heat absorbing portion 71 can be reduced by crushing the height to form an oval shape). In this case, the groove 84 can be formed to have a depth of 1 mm and a width of about 0.5 mm. The wick 82 and the wick core 83 are made of a porous material such as PTFE (polytetrafluoroethylene). The pores of this porous body can be formed with an average radius of about 5 μm and a porosity of about 35%. In such a wick 82, the groove 84 is integrally formed by forming powdery PTFE by molding, for example.

  6A to 6B, 86 is a steam collecting part, 87 is a steam pipe, 88 is a liquid pipe, 89 is a liquid storage tank, 90 is a connection pipe, and 85 is a liquid distribution part. The basic operation is the same as that of the heat pipe shown in FIG. 5 described above, but in this apparatus, liquid is sucked by the capillary action of each wick core 83 by the liquid distributor 85, and the wick core 83 takes the wick 82. Proceed to the capillary tube and evaporate by heat from the case 81. The evaporated vapor passes through the space defined by the groove 84 and proceeds to the vapor collecting portion 86. As shown in FIG. 6A, the groove 84 is sealed between the liquid distributor 85 and the wick 82, while penetrating the vapor collecting portion 86. For this reason, when the pressure in the groove 84 increases due to the evaporation of the liquid, the vapor proceeds toward the vapor collecting portion 86. Then, the vapor is liquefied by being cooled by the heat radiating portion 72 through the vapor pipe 87, and the liquid is accumulated in the liquid reservoir tank 89 through the liquid pipe 88. The liquid accumulated in the liquid reservoir tank 89 returns to the liquid distributor 85 via the connection pipe 90 due to gravity. As the vapor is liquefied by the heat dissipating part 72, the pressure in the case 81 is lowered and further evaporated by the heat absorbing part (evaporating part) 71, and the above process is repeated. By forming the heat absorption part (evaporation part) 71 in such a structure, it is possible to cool over a wide area.

  By using such a loop type heat pipe 7, for example, as shown in FIG. 6D, it can be provided as it is on the front surface of the magnet chuck 3 (the surface facing the vapor deposition mask 1). In the example shown in FIG. 6D, a heat pipe heat absorbing portion 71 is provided in place of the touch plate 4 of the vapor deposition apparatus shown in FIG. 1, but the conventional touch plate 4 is left as it is. You may insert between magnet chucks 3. With such a structure, the surface of the magnet chuck 3 facing the vapor deposition mask 1 is cooled, so that it is most suitable for suppressing the temperature rise of the vapor deposition mask 1. In FIG. 6D, the same parts as those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted. Reference numeral 91 denotes a heat sink. That is, it is cooled by air cooling or the like.

(Vapor deposition method)
Next, the vapor deposition method by 2nd embodiment of this invention is demonstrated. In the vapor deposition method of the second embodiment of the present invention, as shown in FIG. 1 described above, a vapor deposition mask 1 having a magnetic material, a deposition substrate 2 and a magnet chuck 3 that attracts the vapor deposition mask 1 are stacked. In addition, the deposition substrate 1 and the deposition mask 1 are brought close to each other by suction of the deposition mask 1 by the magnet chuck 3, and the deposition material 51 is scattered from the deposition source 5 disposed away from the deposition mask 1. A step of depositing a vapor deposition material 51 on the vapor deposition substrate 2, and the magnet chuck 3 has a permanent magnet 3A and an electromagnet 3B, and the permanent magnet 3A is aligned when the vapor deposition substrate 2 and the vapor deposition mask 1 are aligned. In order to weaken the magnetic field of the permanent magnet 3A, alignment is performed while applying a magnetic field opposite to the direction of the magnetic field of the permanent magnet 3A by the electromagnet 3B, and after the alignment, the magnetic field of the electromagnet 3B is turned off. It is intended to suck the vapor deposition mask 1 by a magnet 3A.

  As described above, the deposition target substrate 2 is overlaid on the deposition mask 1. In this superposition, the vapor deposition mask 1 and the vapor deposition substrate 2 carried by a robot arm (not shown) are held by the mask holder 15 and the substrate holder 29, respectively, and the mask holder 15 and the substrate holder 29 are lowered to a predetermined place. Is done by. The alignment between the deposition substrate 2 and the deposition mask 1 is performed as follows. This is performed by moving the deposition target substrate 2 relative to the deposition mask 1 while observing alignment marks formed on the deposition target substrate 2 and the deposition mask 1 with an imaging device (not shown). . At this time, as described above, by operating the electromagnet 3B, the force for attracting the vapor deposition mask 1 can be reduced. By this method, the opening 11a (see FIG. 8) of the deposition mask 1 and the deposition location of the deposition substrate 2 (for example, in the case of an organic EL display device described later, the pattern of the first electrode 22 of the support substrate 21 shown in FIG. 9). ) Can be matched. After the alignment, the operation of the electromagnet 3 is turned off. As a result, a strong attractive force acts between the permanent magnet 3 </ b> A and the vapor deposition mask 1, and the deposition target substrate 2 and the vapor deposition mask 1 approach firmly. At this time, the time for supplying the current to the coil 32 of the electromagnet 3B is mainly the alignment time, which is about 10 seconds at the maximum, and therefore hardly generates heat. When the deposition is continuously performed by exchanging the deposition target substrate 2 and heat is accumulated, it is preferable to perform cooling using the heat pipe 7 (see FIG. 3) as described above. As a result, the temperature rise of the vapor deposition mask 1 is suppressed.

  After that, as shown in FIG. 1, the vapor deposition material 51 is deposited on the vapor deposition target substrate 2 by scattering (vaporization or sublimation) of the vapor deposition material 51 from the vapor deposition source 5 that is disposed apart from the vapor deposition mask 1. Specifically, as described above, a line source such as a crucible arranged in a line is used, but the present invention is not limited to this. For example, when an organic EL display device is manufactured, a plurality of types of vapor deposition masks 1 having openings 11a formed in some pixels are prepared, and the vapor deposition mask 1 is replaced to form an organic layer by a plurality of vapor deposition operations. . In this case, a plurality of vapor deposition chambers 8 (see FIG. 3) are prepared, different vapor deposition masks 1 are set in the respective vapor deposition chambers 8, and the vapor deposition substrate 2 is sequentially transferred to different vapor deposition chambers 8 to continue vapor deposition. Is efficient.

  According to this vapor deposition method, the permanent magnet 3A and the electromagnet 3B are provided as the magnet chuck 3, and the magnetic field generated by the permanent magnet 3A is used when the deposition substrate 2 is attached or detached or when the deposition substrate 2 and the deposition mask 1 are aligned. Can be done in a weakened state. Therefore, work becomes easy. On the other hand, since the electromagnet 3B is turned off after the alignment, the vapor deposition mask 1 is attracted by the magnetic force of the permanent magnet 3A. Therefore, the vapor deposition mask 1 can be strongly attracted to the vapor deposition substrate 2 and can be in close contact. Therefore, it can be deposited in the same pattern as the pattern of the deposition mask 1. In addition, the electromagnet 3B is turned off during the vapor deposition, and the attraction by the permanent magnet 3A does not generate any heat. Therefore, the temperature of the magnet chuck 3 does not increase during the vapor deposition. That is, as the magnet chuck 3, when the permanent magnet 3A is used alone and when the electromagnet 3B is used alone, the drawbacks are eliminated, and vapor deposition is performed with an accurate pattern.

(Method for manufacturing organic EL display device)
Next, a method for manufacturing an organic EL display device using the vapor deposition method of the above embodiment will be described. Since a manufacturing method other than the vapor deposition method can be performed by a known method, a method of laminating an organic layer by the vapor deposition method of the present invention will be mainly described with reference to FIGS.

  In the method for manufacturing an organic EL display device according to the third embodiment of the present invention, a TFT, a planarizing film, and a first electrode (for example, an anode) 22 (not shown) are formed on a support substrate 21, and a vapor deposition mask 1 is formed on one surface thereof. In order to deposit the vapor deposition material 51, the organic layer laminated film 25 is formed using the above-described vapor deposition method. A second electrode 26 (see FIG. 10; cathode) is formed on the laminated film 25.

For example, the support substrate 21 such as a glass plate is not completely illustrated, but a driving element such as a TFT is formed for each RGB sub-pixel of each pixel, and the first electrode 22 connected to the driving element is flat. On the conversion film, it is formed by a combination of a metal film such as Ag or APC and an ITO film. As shown in FIGS. 9 to 10, an insulating bank 23 made of SiO _2, acrylic resin, polyimide resin, or the like is formed between the sub-pixels. On the insulating bank 23 of the support substrate 21, the above-described vapor deposition mask 1 is aligned and fixed. For this fixing, as shown in FIG. 1 described above, for example, a permanent magnet 3A of a magnet chuck 3 provided via a touch plate 4 on the surface opposite to the vapor deposition surface of the support substrate 21 (vapor deposition substrate 2) is used. By adsorbing. As described above, since a magnetic material is used for the metal support layer 12 (see FIG. 8) of the vapor deposition mask 1, when the magnetic field is applied by the magnet chuck 3, the metal support layer 12 and the magnet chuck 3 of the vapor deposition mask 1 are used. A suction force is generated between At this time, as described above, since the current flows through the coil 32 of the electromagnet 3B is very short, there is almost no heat generation. However, by providing the heat pipe 7, even a small amount of heat is efficiently dissipated. As a result, even if there is a difference in coefficient of thermal expansion between the vapor deposition mask 1 and the support substrate 21, the mutual displacement is greatly suppressed. A high-definition organic EL display device can be obtained.

  In this state, as shown in FIG. 9, the vapor deposition material 51 is scattered from the vapor deposition source (crucible) 5 in the vapor deposition apparatus, and the vapor deposition material 51 is applied only to the portion of the support substrate 21 exposed to the opening 11 a of the vapor deposition mask 1. The organic layer laminated film 25 is formed on the first electrode 22 of the desired sub-pixel by vapor deposition. This vapor deposition process may be performed for each sub-pixel by sequentially replacing the vapor deposition mask 1. The vapor deposition mask 1 in which the same material is vapor-deposited simultaneously on a plurality of subpixels may be used. When the deposition mask 1 is replaced, the magnetic field to the metal support layer 12 (see FIG. 8) of the deposition mask 1 is weakened by operating an electromagnet 3B (see FIG. 1) not shown in FIG. Thus, it is controlled by a power supply circuit (not shown).

9 to 10, the organic layer laminated film 25 is simply shown as one layer, but the organic layer laminated film 25 may be formed of a plurality of layers of laminated films 25 made of different materials. For example, as a layer in contact with the anode 22, a hole injection layer made of a material with good ionization energy consistency that improves hole injection may be provided. On this hole injection layer, a hole transport layer capable of improving the stable transport of holes and confining electrons (energy barrier) in the light emitting layer is formed of, for example, an amine material. Further, a light emitting layer selected on the basis of the light emission wavelength is formed by doping Alq ₃ with red or green organic fluorescent material for red, green, for example. As the blue material, a DSA organic material is used. On the light emitting layer, an electron transport layer that further improves the electron injection property and stably transports electrons is formed of Alq ₃ or the like. By laminating each of these layers by several tens of nanometers, an organic layer laminated film 25 is formed. An electron injection layer that improves electron injection properties such as LiF and Liq may be provided between the organic layer and the metal electrode. In the present embodiment, these are included in the organic layer laminated film 25.

  In the organic layer laminated film 25, the light emitting layer is deposited with an organic layer of a material corresponding to each color of RGB. In addition, the hole transport layer, the electron transport layer, and the like are preferably deposited separately using a material suitable for the light emitting layer if the light emitting performance is important. However, in consideration of the material cost, there are cases where two or three colors of RGB are laminated with the same material. In the case where materials common to subpixels of two or more colors are stacked, the vapor deposition mask 1 in which openings are formed in the common subpixels is formed. In the case where the vapor deposition layers are different in individual sub-pixels, for example, each organic layer can be vapor-deposited continuously using one vapor deposition mask 1 in the R sub-pixels. In addition, when a common organic layer is deposited in RGB, the organic layer of each sub-pixel is vapor-deposited to the lower side of the common layer, and vapor deposition in which openings are formed in RGB at the common organic layer. Using the mask 1, the organic layers of all the pixels are deposited at once. In the case of mass production, a number of vacuum chambers of the vapor deposition apparatus are arranged, and different vapor deposition masks 1 are attached to the respective vapor deposition apparatuses, and the support substrate 21 (deposition target substrate 2) moves through each vapor deposition apparatus. Deposition may be performed continuously.

When the formation of the laminated film 25 of all organic layers including the electron injection layer such as the LiF layer is completed, as described above, the electromagnet 3B is turned on to weaken the magnetic field, and then the vapor deposition mask 1, the support substrate 21, and the like. Are separated. Thereafter, a second electrode (for example, a cathode) 26 is formed on the entire surface. The example shown in FIG. 10 is a top emission type and emits light from the surface opposite to the support substrate 21 in the figure. Therefore, the second electrode 26 is made of a translucent material, for example, a thin film of Mg—Ag. It is formed by a eutectic film. In addition, Al or the like can be used. In the case of a bottom emission type in which light is radiated through the support substrate 21, ITO, In ₃ O ₄ or the like is used for the first electrode 22, and the second electrode 26 includes a metal having a low work function, For example, Mg, K, Li, Al, etc. can be used. A protective film 27 made of, for example, Si ₃ N ₄ is formed on the surface of the second electrode 26. The entirety is sealed by a sealing layer made of glass, moisture-resistant resin film, or the like (not shown), and the organic layer laminated film 25 is configured not to absorb moisture. Further, the organic layer can be made as common as possible and a color filter can be provided on the surface thereof.

(Summary)
(1) The vapor deposition apparatus according to the first embodiment of the present invention is provided to be disposed close to the vapor deposition mask held by the mask holder, which holds the vapor deposition mask having a magnetic material, A substrate holder for holding a substrate to be deposited, a deposition source provided on the opposite surface of the deposition mask to the deposition substrate and spaced from the deposition mask, and for vaporizing or sublimating a deposition material, and held by the substrate holder A magnet chuck that is provided on a surface opposite to the deposition mask of the deposition substrate and that attracts the deposition mask with a magnetic force, and the magnet chuck includes a permanent magnet and an electromagnet.

  According to the vapor deposition apparatus of one embodiment of the present invention, since the permanent magnet and the electromagnet are used as the magnet chuck, when the vapor deposition substrate is mounted or removed, or when the vapor deposition substrate and the vapor deposition mask are aligned. In addition, the magnetic field of the permanent magnet can be weakened by the electromagnet. As a result, the operation becomes very easy and an accurate deposition pattern based on accurate alignment is obtained. Also, heat generation by the electromagnet is greatly suppressed.

  (2) The permanent magnet and the electromagnet are juxtaposed in a direction perpendicular to the axial direction of the permanent magnet, and the surface opposite to the surface facing the vapor deposition mask of the permanent magnet and the electromagnet is connected by a magnetic plate. It is preferable. With this configuration, when the electromagnet is turned off, the polarity of the surface opposite to the surface facing the permanent magnet deposition mask is guided to the same surface as the desired surface of the permanent magnet deposition mask through the electromagnet core. In addition, it has a structure similar to a horseshoe-shaped permanent magnet, and can provide a strong magnetic field to the vapor deposition mask.

  (3) It is preferable that the magnetic plate is made of a soft magnetic material because residual magnetization by an electromagnet hardly remains.

  (4) The electromagnet may be provided to generate a magnetic field coaxially with the axial direction of the permanent magnet. By doing so, both types of magnets can be placed with little reduction in the space for placement of conventional permanent magnets. In this case, even if the permanent magnet and the electromagnet are not stacked in the axial direction, the electromagnet is formed by winding the coil around the permanent magnet or by winding the coil around the cylinder and covering the outer periphery of the permanent magnet. Can be done.

  (5) The electromagnet can weaken the magnetic field of the permanent magnet by including a control unit that generates a magnetic field opposite to the direction of the magnetic field of the permanent magnet.

  (6) It is preferable that a heat insulating member is interposed between the support plate for supporting the mask holder and the substrate holder and each of the mask holder and the substrate holder. By doing so, when the deposition substrate and the deposition mask are aligned, the temperature of the deposition substrate rises, and even if the deposition substrate is replaced and continuous deposition is performed, heat accumulation in the deposition mask is not caused. Hard to occur.

  (7) The mask holder, the substrate holder, the vapor deposition source, and a vacuum chamber containing the magnet chuck, and a heat pipe, and a heat absorption part of the heat pipe are in contact with the magnet chuck, and the heat It is preferable that the heat radiating part of the pipe is led out of the vacuum chamber. With this structure, even when heat is generated in the magnet chuck, heat conduction to the vapor deposition mask or the like is suppressed.

  (8) Since a part of the heat absorption part of the heat pipe is embedded in a part of the magnet chuck, the contact area between the heat pipe and the magnet chuck increases, and the heat of the magnet chuck is effectively dissipated. be able to.

  (9) Since the heat absorption part of the heat pipe is provided on the surface of the magnet chuck facing the deposition target substrate, heat conduction to the deposition mask can be further suppressed.

  (10) Further, in the vapor deposition method according to the second embodiment of the present invention, the vapor deposition mask having a magnetic material, a deposition target substrate, and a magnet chuck for attracting the vapor deposition mask are overlapped, and the vapor deposition by the magnet chuck is performed. The vapor deposition material is deposited on the vapor deposition substrate by the step of bringing the vapor deposition substrate and the vapor deposition mask close by sucking a mask, and the vapor deposition material scattered from a vapor deposition source arranged away from the vapor deposition mask. The magnetic chuck has a permanent magnet and an electromagnet, and the magnetic field of the permanent magnet is weakened to weaken the magnetic field of the permanent magnet when aligning the deposition substrate and the deposition mask. The permanent magnet is subjected to the alignment while applying a magnetic field opposite to the direction of the permanent magnet by turning off the magnetic field of the electromagnet after the alignment. Accordingly performed by sucking the deposition mask.

  According to the vapor deposition method of the second embodiment of the present invention, the attachment of the vapor deposition substrate and the alignment between the vapor deposition substrate and the vapor deposition mask can be performed with little influence from the magnetic field. As a result, work is easy and alignment can be performed reliably. In addition, since the deposition mask is attracted by a strong magnetic field only with a permanent magnet during deposition, heat generation does not occur, the contact between the deposition mask and the substrate to be deposited is good, and the deposition material is covered with an accurate pattern of the deposition mask. It is deposited on the deposition substrate.

  (11) It is preferable to turn on the electromagnet to weaken the magnetic field of the permanent magnet when attaching or detaching the deposition substrate, because the work at the time of attachment or detachment becomes easy.

  (12) When the electromagnet is turned off, the generation of electromotive force due to electromagnetic induction can be suppressed by gradually reducing the current and turning it off.

  (13) Furthermore, in the method for manufacturing an organic EL display device according to the third embodiment of the present invention, at least a TFT and a first electrode are formed on a support substrate, and the above (10) to (12) are formed on the surface of the support substrate. ) To form a laminated film of an organic layer by vapor-depositing an organic material using the vapor deposition method described in any one of the above items, and forming a second electrode on the laminated film.

  According to the manufacturing method of the organic EL display device of the third embodiment of the present invention, when the organic EL display device is manufactured, it is easy to work as in the case of using an electromagnet as a magnet chuck, and the magnet Since generation of heat from the chuck can be suppressed, it is possible to obtain a deposited film having an accurate pattern without being affected by thermal expansion while being easy to work.

DESCRIPTION OF SYMBOLS 1 Deposition mask 2 Substrate to be deposited 3 Magnet chuck 3A Permanent magnet 3B Electromagnet 4 Touch plate 5 Deposition source 7 Heat pipe 8 Vacuum chamber 12 Metal support layer 15 Mask holder 21 Support substrate 22 First electrode 23 Insulation bank 25 Multilayer film 26 Second Electrode 29 Substrate holder 35 Magnetic plate 66 Spacer (heat insulation member)
71 Heat-absorbing part 72 Heat-radiating part 73 Space part 80 Wick structure 81 Case (container)
82 Wick 83 Wick Core 84 Groove 96 Bellows

Claims (12)

A mask holder for holding a vapor deposition mask having a magnetic material;
A substrate holder for holding the deposition substrate in order to place the deposition substrate in proximity to the deposition mask held by the mask holder;
A vapor deposition source provided on the opposite side of the vapor deposition mask from the vapor deposition substrate and spaced from the vapor deposition mask, to vaporize or sublimate the vapor deposition material;
A magnet chuck that is provided on a surface opposite to the vapor deposition mask of the vapor deposition substrate held by the substrate holder and sucks the vapor deposition mask with a magnetic force;
The vapor deposition apparatus, wherein the magnet chuck includes a permanent magnet and an electromagnet, the permanent magnet and the electromagnet are arranged side by side in the axial direction, and the periphery thereof is fixed by a coating. A mask holder for holding a vapor deposition mask having a magnetic material;
A substrate holder for holding the deposition substrate in order to place the deposition substrate in proximity to the deposition mask held by the mask holder;
A vapor deposition source provided on the opposite side of the vapor deposition mask from the vapor deposition substrate and spaced from the vapor deposition mask, to vaporize or sublimate the vapor deposition material;
A magnet chuck that is provided on a surface opposite to the vapor deposition mask of the vapor deposition substrate held by the substrate holder and sucks the vapor deposition mask with a magnetic force;
The vapor deposition apparatus, wherein the magnet chuck includes a permanent magnet and an electromagnet, and the electromagnet is formed by winding a coil around the permanent magnet. A mask holder for holding a vapor deposition mask having a magnetic material;
A substrate holder for holding the deposition substrate in order to place the deposition substrate in proximity to the deposition mask held by the mask holder;
A vapor deposition source provided on the opposite side of the vapor deposition mask from the vapor deposition substrate and spaced from the vapor deposition mask, to vaporize or sublimate the vapor deposition material;
A magnet chuck that is provided on a surface opposite to the vapor deposition mask of the vapor deposition substrate held by the substrate holder and sucks the vapor deposition mask with a magnetic force;
The vapor deposition apparatus, wherein the magnet chuck includes a permanent magnet and an electromagnet, and the electromagnet winds a coil around a cylindrical body and covers the outer periphery of the permanent magnet.   The said electromagnet is a vapor deposition apparatus of any one of Claims 1-3 which has a control means to produce | generate the magnetic field opposite to the direction of the magnetic field of the said permanent magnet.   The vapor deposition apparatus of any one of Claims 1-4 with which the heat insulation member is interposed between the support plate which supports the said mask holder and a substrate holder, and each of the said mask holder and the said substrate holder.   A vacuum chamber containing the mask holder, the substrate holder, the vapor deposition source, and the magnet chuck, and a heat pipe are further provided, and a heat absorbing portion of the heat pipe is in contact with the magnet chuck, and heat dissipation of the heat pipe is performed. The vapor deposition apparatus of any one of Claims 1-5 by which the part is derived | led-out outside the said vacuum chamber.   The vapor deposition apparatus according to claim 6, wherein a part of the heat absorption part of the heat pipe is embedded in a part of the magnet chuck.   The vapor deposition apparatus according to claim 6, wherein the heat absorption portion of the heat pipe is provided on a surface of the magnet chuck facing the vapor deposition substrate. The vapor deposition apparatus according to any one of claims 1 to 8, wherein a vapor deposition mask having a magnetic material, a deposition target substrate, and a magnet chuck for attracting the vapor deposition mask are overlapped, and the magnet chuck is used to The step of bringing the deposition substrate and the deposition mask close by suction of the deposition mask, and the deposition material is deposited on the deposition substrate by scattering of the deposition material from a deposition source disposed away from the deposition mask. The process of
Including
The magnet chuck has a permanent magnet and an electromagnet, and in order to weaken the magnetic field of the permanent magnet when the deposition substrate and the deposition mask are aligned, the direction of the magnetic field of the permanent magnet is opposite. The vapor deposition method wherein the alignment is performed while applying the magnetic field by the electromagnet, and the vapor deposition mask is attracted by the permanent magnet by turning off the magnetic field of the electromagnet after alignment.   The vapor deposition method according to claim 9, wherein the electromagnet is turned on to weaken a magnetic field of the permanent magnet when the vapor deposition substrate is attached or detached.   The vapor deposition method according to claim 9 or 10, wherein when the electromagnet is turned off, the current is gradually reduced to turn it off. Forming at least a TFT and a first electrode on a support substrate;
A laminated film of an organic layer is formed by vapor-depositing an organic material on the surface of the support substrate using the vapor deposition method according to any one of claims 9 to 11.
A method of manufacturing an organic EL display device, comprising forming a second electrode on the laminated film.

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