JP2019029494A - Module, power conversion equipment, and method of manufacturing module - Google Patents

Abstract

To provide a module including electrodes connected to front and rear surfaces of a semiconductor chip, manufacturing process of which can be simplified while positional accuracy of the semiconductor chip with respect to the electrodes are secured.SOLUTION: When an upper surface of a transistor 9a1 is defined as a front surface and a lower surface thereof is defined as a rear surface, high-voltage side electrode wiring 2 that is the rear side electrode of a front side electrode and a rear side electrode has a receiving recess 2a surrounding the transistor 9a1 from the side. When an upper surface of a transistor 9b1 is defined as a front surface and a lower surface thereof is defined as a rear surface, low-voltage side electrode wiring 3 that is the front side electrode of a front side electrode and a rear side electrode has a receiving recess 3a surrounding the transistor 9b1 from the side.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a module, a power conversion device, and a method for manufacturing the module.

  A power conversion device (power module) mounted in an automobile or the like converts, for example, power flow power output from a battery into AC power for supplying to a motor. Such a power conversion device has a structure in which a plurality of semiconductor chips such as transistors are connected to each other. For example, Patent Document 1 discloses a semiconductor module that can be applied to such a power conversion device and includes a semiconductor chip and a cooling pipe that cools the semiconductor chip.

JP 2007-165620 A

  By the way, when adopting a structure in which the front and back surfaces of the semiconductor chip are sandwiched between two electrodes, the semiconductor chip is subjected to a reflow process in which, for example, a conductive paste is applied to the electrodes, the semiconductor chip is arranged, and the conductive paste is heated. And the electrode are connected. At this time, in order to increase the positional accuracy between the semiconductor chip and the electrode, the surface on one side of the semiconductor chip is first fixed to one electrode, and then the surface on the other side of the semiconductor chip is fixed to the other electrode. Yes. That is, conventionally, in order to join the two electrodes to the semiconductor chip while ensuring the positional accuracy, it is necessary to perform the process of heating the conductive paste twice.

  The present invention has been made in view of the above-described problems. In a module in which electrodes are connected to the front and back surfaces of a semiconductor chip, the manufacturing process can be simplified while ensuring the positional accuracy of the semiconductor chip with respect to the electrodes. With the goal.

  The present invention adopts the following configuration as means for solving the above-described problems.

  1st invention is a module which has the front side electrode connected to the surface of the semiconductor chip via the electroconductive junction part, and the back side electrode connected to the back surface of the said semiconductor chip via the electroconductive junction part, A configuration is adopted in which at least one of the front side electrode and the back side electrode has a housing recess that surrounds the semiconductor chip from the side.

  According to a second invention, in the first invention, one of the front-side electrode and the back-side electrode has the housing recess, and the other of the front-side electrode and the back-side electrode is disposed opposite to the housing recess and the semiconductor A configuration is adopted in which the chip has a crown portion that covers from the side opposite to the housing recess.

  According to a third invention, in the first invention, one of the front-side electrode and the back-side electrode has the housing recess, and the other of the front-side electrode and the back-side electrode is disposed to face the housing recess and the housing. A configuration is adopted in which a convex portion protruding toward the concave portion is provided.

  According to a fourth invention, in any one of the first to third inventions, a configuration is adopted in which a depth dimension of the accommodating recess is smaller than a thickness dimension of the semiconductor chip in a front-back direction.

  A fifth invention is a power converter, comprising any one of the first to fourth modules, or including any one of the first to fourth modules, and changing a form of input power. The configuration of output is adopted.

  According to a sixth aspect of the present invention, there is provided a semiconductor chip having a connecting portion on each of the front and back surfaces, a front side electrode connected to the surface of the semiconductor chip via a conductive bonding portion, and a conductive bonding portion on the back surface of the semiconductor chip. A method of manufacturing a module having a back-side electrode connected via a conductive paste disposed in an accommodation recess provided in at least one of the front-side electrode and the back-side electrode and capable of accommodating the semiconductor chip A conductive paste placement step, a semiconductor chip holding step of holding the semiconductor chip in the receiving recess, and holding the semiconductor chip in a state sandwiched between the front electrode and the back electrode, and the conductive paste. The structure which has the electroconductive junction part formation process which forms the said electroconductive junction part by heating is employ | adopted.

  In a seventh aspect based on the sixth aspect, the conductive junction forming step is performed in a state where the semiconductor chip, the front side electrode, and the back side electrode are accommodated in a mold. Later, a configuration is adopted in which a molding process is performed in which insert molding is performed to cover the semiconductor chip, the front electrode, and the back electrode with a resin material.

  According to the present invention, at least one of the front-side electrode connected to the front surface of the semiconductor chip and the back-side electrode connected to the back surface of the semiconductor chip has the housing recess that can surround the semiconductor chip from the side. For this reason, even if the fluidity of the conductive paste is high, the positional accuracy of the semiconductor chip with respect to the front side electrode or the back side electrode can be maintained. Therefore, according to the present invention, it is possible to join the front side electrode and the back side electrode to the semiconductor chip in one step. Therefore, according to the present invention, in a module in which electrodes are connected to the front and back surfaces of a semiconductor chip, the manufacturing process can be simplified while ensuring the positional accuracy of the semiconductor chip with respect to the electrodes.

It is a schematic block diagram of the power converter device of this embodiment, (a) is a circuit diagram, (b) is sectional drawing. It is AA sectional drawing of FIG.1 (b). It is a schematic diagram for demonstrating the manufacturing method of the power converter device of this embodiment. It is typical sectional drawing which shows the modification of the power converter device of this embodiment.

  Hereinafter, with reference to the drawings, an embodiment of a module, a power conversion device, and a method for manufacturing the module according to the present invention will be described. In the following drawings, the scale of each member is appropriately changed in order to make each member a recognizable size. In the present embodiment, an embodiment of a power conversion device including the module of the present invention and a manufacturing method thereof will be described.

  Drawing 1 is a schematic structure figure of power converter 1 of this embodiment, (a) is a circuit diagram and (b) is a sectional view. The power conversion device 1 according to the present embodiment is a power module that is mounted on a vehicle and has an inverter function that converts DC power supplied from a battery into AC power and supplies the AC power to a motor. As shown in FIG. 1A, the power conversion device 1 of the present embodiment includes a high voltage side electrode wiring 2, a low voltage side electrode wiring 3, a U phase switching leg 4, a V phase switching leg 5, It has a W-phase switching leg 6, an output electrode wiring 7, and a control electrode wiring 8 (see FIG. 1B).

  As shown in FIG. 1A, the high-voltage side electrode wiring 2 is connected to the high-voltage side terminal of the battery B, and includes a U-phase switching leg 4, a V-phase switching leg 5, and a W-phase switching leg 6. The battery B is connected to the high voltage side terminal. The low voltage side electrode wiring 3 is connected to the low voltage side terminal of the battery B, and the U phase switching leg 4, the V phase switching leg 5 and the W phase switching leg 6 are connected to the low voltage side terminal of the battery B. Yes.

  The U-phase switching leg 4, the V-phase switching leg 5, and the W-phase switching leg 6 are formed by connecting a plurality of arms 9 in parallel. Each arm 9 has one upper arm 9a and one lower arm 9b connected in series. The upper arm 9 a has a collector connected to the high voltage side electrode wiring 2, an emitter connected to the output electrode wiring 7, a cathode connected to the high voltage side electrode wiring 2, and an anode connected to the output electrode wiring 7. And a connected diode 9a2. The lower arm 9 b has a collector connected to the output electrode wiring 7, an emitter connected to the low voltage side electrode wiring 3, an anode connected to the low voltage side electrode wiring 3, and a cathode connected to the output electrode wiring 7. And a connected diode 9b2.

  The output electrode wiring 7 is provided for each of the U-phase switching leg 4, the V-phase switching leg 5, and the W-phase switching leg 6, and in each arm 9, an upper arm 9a and a lower arm are provided. 9b. AC power is output from these output electrode wires 7 toward a motor (not shown). One control electrode wiring 8 is connected to each of the base of the transistor 9a1 and the base of the transistor 9b1. These control electrode wirings 8 input drive signals to the transistors 9a1 and 9b1 under the control of a control device (not shown).

  FIG. 1B is a cross-sectional view taken along one arm 9. As shown in this figure, the power conversion device 1 of the present embodiment includes the above-described high-voltage side electrode wiring 2, low-voltage side electrode wiring 3, output electrode wiring 7, control electrode wiring 8, and arm 9, The resin mold part 10, the electroconductive joining part 11, the control electrode wiring holding part 12, the heat conductive sheet 13, and the cooler 14 are provided. In addition, the installation attitude | position of the power converter device 1 of this embodiment is not specifically limited with respect to the gravity direction. However, in the following description, for convenience of description, as shown by the coordinate axes in FIG. 1B, the high voltage side electrode wiring 2 side is described as the lower side, and the low voltage side electrode wiring 3 is described as the upper side.

  The high-voltage side electrode wiring 2 is a conductive metal wiring held by the resin mold part 10, and is formed of, for example, a copper (Cu) material. The high voltage side electrode wiring 2 is disposed below the curved output electrode wiring 7. Moreover, the high voltage side electrode wiring 2 has the accommodation recessed part 2a recessed toward the downward direction on the upper surface side. The accommodating recess 2a individually accommodates the transistor 9a1 and the diode 9a2 made of a semiconductor chip, and has a rectangular shape in plan view so as to surround the transistor 9a1 and the diode 9a2 from the side. The depth dimension of the housing recess 2a is set smaller than the thickness dimension of the transistor 9a1 and the diode 9a2 in the front and back direction (vertical direction in FIG. 1B).

  FIG. 2 is a cross-sectional view taken along line AA in FIG. As described above, the U-phase switching leg 4, the V-phase switching leg 5, and the W-phase switching leg 6 have a plurality of arms 9 connected in parallel. In the power conversion device 1 of the present embodiment, the U-phase switching leg 4, the V-phase switching leg 5, and the W-phase switching leg 6 are each provided with five arms 9 in parallel. For this reason, the high voltage side electrode wiring 2 has ten accommodation recessed parts 2a in each switching leg. The high-voltage side electrode wiring 2 is connected to the lower surface of the transistor 9a1 (five transistors 9a1) and the diode 9a2 (five diodes 9a2) via the conductive junction 11.

  Similarly to the high voltage side electrode wiring 2, the low voltage side electrode wiring 3 is a conductive metal wiring held by the resin mold part 10, and is formed of, for example, a copper (Cu) material. The low-voltage side electrode wiring 3 is disposed above the curved output electrode wiring 7. Moreover, the low voltage side electrode wiring 3 has the accommodation recessed part 3a dented upwards on the lower surface side. The accommodation recess 3a individually accommodates the transistor 9b1 and the diode 9b2 made of a semiconductor chip, and is set in a rectangular shape in plan view so as to surround the transistor 9b1 and the diode 9a2 from the side. . The depth dimension of the accommodating recess 3a is set smaller than the thickness dimension of the transistor 9b1 and the diode 9b2 in the front and back direction (vertical direction in FIG. 1B). The receiving recesses 3a formed in the low-voltage side electrode wiring 3 are arranged in five in the depth direction of FIG. 1B, similarly to the receiving recesses 2a formed in the high-voltage side electrode wiring 2. Such a low voltage side electrode wiring 3 is connected to the upper side surfaces of the transistor 9b1 and the diode 9b2 through the conductive junction 11.

  Similarly to the high-voltage side electrode wiring 2 and the low-voltage side electrode wiring 3, the output electrode wiring 7 is a conductive metal wiring held by the resin mold portion 10, and is formed of, for example, a copper (Cu) material. As shown in FIG. 1B, the output electrode wiring 7 is curved so that the cross-sectional shape is substantially S-shaped, one end side is disposed above the high-voltage side electrode wiring 2, and the other end side is a low voltage. It is arranged below the side electrode wiring 3. The output electrode wiring 7 has a crown portion 7 a provided so as to protrude toward the high-voltage side electrode wiring 2 at a portion facing the high-voltage side electrode wiring 2. As shown in FIG. 2, the crown portion 7a is formed with a recess 7a1 that accommodates the transistor 9a1 and the diode 9a2. As shown in FIG. 2, the crown portion 7 a is arranged so as to cover the transistor 9 a 1 and the diode 9 a 2 from the side opposite to the high-voltage side electrode wiring 2. The output electrode wiring 7 is connected to the upper surface side of the transistor 9a1 and the diode 9a2 through the conductive junction 11.

  Further, as shown in FIG. 1B, the output electrode wiring 7 has a crown portion 7 b provided so as to protrude toward the low voltage side electrode wiring 3 at a portion facing the low voltage side electrode wiring 3. Yes. The crown portion 7b is formed with a recess (not shown) that accommodates the transistor 9b1 and the diode 9b2. Such a crown portion 7b is disposed so as to cover the transistor 9b1 and the diode 9b2 from the side opposite to the low-voltage side electrode wiring 3. Such an output electrode wiring 7 is connected to the lower surface side of the transistor 9b1 and the diode 9b2 through the conductive junction 11.

  The control electrode wiring 8 is disposed inside the resin mold portion 10 while being held by the control electrode wiring holding portion 12. The control electrode wiring 8 is connected to the base above the transistor 9a1 or the base below the transistor 9b1.

  The transistors 9a1 and 9b1 are formed of flat and rectangular bare chips (semiconductor chips) that function as transistors. The transistor 9 a 1 is disposed between the high-voltage electrode wiring 2 and the output electrode wiring 7 in a state of being accommodated in the accommodating recess 2 a provided on the upper surface side of the high-voltage electrode wiring 2. The transistor 9a1 has an emitter formed on the upper surface side and a collector formed on the lower surface side. The transistor 9 b 1 is disposed between the low-voltage electrode wiring 3 and the output electrode wiring 7 in a state of being accommodated in the accommodating recess 3 a provided on the lower surface side of the low-voltage electrode wiring 3. The transistor 9b1 has an emitter formed on the upper surface side and a collector formed on the lower surface side.

  For example, when the upper surface of the transistor 9a1 is the front surface and the lower surface is the back surface, the output electrode wiring 7 is a front side electrode connected to the surface of the transistor 9a1 through the conductive junction 11. Further, the high-voltage side electrode wiring 2 serves as a back side electrode connected to the back surface of the transistor 9a1 via the conductive junction 11. Furthermore, the high voltage side electrode wiring 2 which is a back side electrode among these front side electrodes and back side electrodes has the accommodation recessed part 2a which surrounds the transistor 9a1 from the side.

  On the other hand, when the upper surface of the transistor 9b1 is the front surface and the lower surface is the back surface, the output electrode wiring 7 is a back-side electrode connected to the back surface of the transistor 9b1 through the conductive junction 11. Further, the low voltage side electrode wiring 3 becomes a front side electrode connected to the surface of the transistor 9b1 via the conductive junction 11. Furthermore, the low voltage side electrode wiring 3 which is a front side electrode among these front side electrodes and back side electrodes has the accommodation recessed part 3a which surrounds the transistor 9b1 from the side.

  The diode 9a2 and the diode 9b2 are formed of a flat and rectangular bare chip (semiconductor chip) that functions as a diode. The diode 9 a 2 is disposed between the high-voltage electrode wiring 2 and the output electrode wiring 7 in a state of being accommodated in the accommodating recess 2 a provided on the upper surface side of the high-voltage electrode wiring 2. The diode 9a2 has an anode formed on the upper surface side and a cathode formed on the lower surface side. The diode 9 b 2 is disposed between the low-voltage side electrode wiring 3 and the output electrode wiring 7 in a state of being accommodated in the accommodating recess 3 a provided on the lower surface side of the low-voltage side electrode wiring 3. The diode 9b2 has an anode formed on the upper surface side and a cathode formed on the lower surface side.

  The resin mold portion 10 is a base member that holds the high-voltage side electrode wiring 2, the low-voltage side electrode wiring 3, the output electrode wiring 7, the control electrode wiring 8, and the like, and is formed of an insulating resin material. The resin mold portion 10 holds the high-voltage electrode wiring 2 and the low-voltage electrode wiring 3 so that the lower surface of the high-voltage electrode wiring 2 and the upper surface of the low-voltage electrode wiring 3 are exposed.

  The conductive junction 11 is provided between the high-voltage side electrode wiring 2 and the lower surface (collector) of the transistor 9a1, between the output electrode wiring 7 and the upper surface (emitter) of the transistor 9a1, and between the low-voltage side electrode wiring 3 and the transistor 9b1. Between the upper surface (emitter), between the output electrode wiring 7 and the lower surface (collector) of the transistor 9a1, between the high-voltage side electrode wiring 2 and the lower surface (cathode) of the diode 9a2, and between the output electrode wiring 7 and the diode 9a2. Between the low voltage side electrode wiring 3 and the upper surface (anode) of the diode 9b2, and between the output electrode wiring 7 and the lower surface (cathode) of the diode 9b2. . These conductive joints 11 are conductive members cured by heating a thermosetting conductive paste, and the transistors 9a1 or 9b1 are connected to electrodes (high-voltage side electrode wiring 2, low-voltage side electrode wiring 3 or It is electrically connected to the output electrode wiring 7).

  Among these conductive junctions 11, the conductive junction 11 inserted between the high-voltage side electrode wiring 2 and the lower surfaces (collector, cathode) of the transistor 9 a 1 and the diode 9 a 2 is an accommodating recess of the high-voltage side electrode wiring 2. It is provided in a state accommodated in 2a. In addition, the conductive junction 11 inserted between the low-voltage side electrode wiring 3 and the upper surfaces (emitter, anode) of the transistor 9b1 and the diode 9b2 in the conductive junction 11 is the accommodating recess 3a of the low-voltage side electrode wiring 3. Are provided in a state of being accommodated in the.

  The control electrode wiring holding part 12 is a part for holding the control electrode wiring 8 and is formed of an insulating resin. The control electrode wiring holding portion 12 is held by the resin mold portion 10. The heat conductive sheet 13 is interposed between the high-voltage side electrode wiring 2 and the cooler 14 and between the low-voltage side electrode wiring 3 and the cooler 14. These heat conductive sheets 13 are arranged in a region that is not covered with the resin mold portion 10 of the high-voltage side electrode wiring 2 and a region that is not covered with the resin mold portion 10 of the low-voltage side electrode wiring 3. Heat is transferred from the side electrode wiring 2 or the low voltage side electrode wiring 3 to the cooler 14. The cooler 14, for example, has cooling water flowing therein, and releases heat transmitted from the transistors 9 a 1 and 9 b 1 to the outside via the high-voltage side electrode wiring 2 and the low-voltage side electrode wiring 3. In addition, as the cooler 14, a heat radiating fin or the like can be used.

  The power conversion apparatus 1 according to the present embodiment converts the DC power supplied from the battery B into AC power by appropriately switching on / off of the transistor 9a1 and the transistor 9b1, and outputs the AC power.

  Then, the manufacturing method of the power converter device 1 of this embodiment is demonstrated with reference to the schematic diagram of FIG. First, as shown in FIG. 3A, for example, the high-voltage side electrode wiring 2 in which the housing recess 2a is formed by cutting or the like, and the output electrode wiring 7 in which the crown portion 7a is similarly formed by cutting or the like. Is made. The output electrode wiring 7 is also formed with a crown portion 7b. In addition, a low-voltage electrode wiring 3 (not shown) in which the housing recess 3a is formed is also produced. Further, as shown in FIG. 3A, a conductive paste 11a to be the conductive joint 11 is applied to the housing recess 2a of the high-voltage electrode wiring 2 (conductive paste disposing step). In addition, the conductive paste 11 a is also applied to the concave portion 7 a 1 of the crown portion 7 a of the output electrode wiring 7. Although not shown, the conductive paste 11 a is also applied to the housing recess 3 a of the low-voltage side electrode wiring 3 and the recess 7 b 1 of the crown 7 b of the output electrode wiring 7.

  Subsequently, as shown in FIG. 3B, the diode 9 a 2 and the transistor 9 a 1 are arranged in the accommodating recess 2 a of the high-voltage electrode wiring 2, and are sandwiched between the high-voltage electrode wiring 2 and the output electrode wiring 7. Thus, the diode 9a2 and the transistor 9a1 are held (semiconductor chip holding step). Although not shown, the diode 9b2 and the transistor 9b1 are disposed in the accommodating recess 3a of the low-voltage side electrode wiring 3, and the diode 9b2 is sandwiched between the low-voltage side electrode wiring 3 and the output electrode wiring 7. And the transistor 9b1 is held.

  Further, as shown in FIG. 3B, the high-voltage side electrode wiring 2, the output electrode wiring 7, and the low-voltage side electrode wiring 3 (not shown) holding the transistor 9a1 and the like are formed on an injection mold 100. Place in the cavity. Subsequently, the entire mold is heated to cure the conductive paste 11a to form the conductive joint 11 (conductive joint forming step).

  Subsequently, as shown in FIG. 3C, the molten resin is injected into the cavity of the mold 100, and then cooled, whereby the high-voltage side electrode wiring 2 holding the transistor 9a1 and the like, the output electrode wiring 7, and Then, insert molding is performed to cover the low-voltage side electrode wiring 3 (not shown) with a resin material (molding process). Thereby, the resin mold part 10 is formed. The resin material also flows between the plurality of transistors 9a1, and as shown in FIG. 3C, the resin mold portion 10 is formed between the transistors 9a1. Note that the control electrode wiring 8 and the control electrode wiring holding portion 12 are also accommodated in the cavity of the mold 100.

  Then, it becomes the power converter device 1 of this embodiment by installing the heat conductive sheet 13 and the cooler 14. Such a power converter 1 of this embodiment is mounted in a vehicle. At this time, the high-voltage side electrode wiring 2 is connected to the high-voltage side terminal of the battery B, the low-voltage side electrode wiring 3 is connected to the low-voltage side terminal of the battery B, the output electrode wiring 7 is connected to the motor, and the control electrode wiring 8 Is connected to the control unit.

  In the power conversion device 1 and the manufacturing method thereof according to the present embodiment as described above, for example, when the upper surface of the transistor 9a1 and the diode 9a2 is the front surface and the lower surface is the back surface, the high-voltage side that is the back electrode of the front electrode and the back electrode The electrode wiring 2 has an accommodation recess 2a that surrounds the transistor 9a1 and the diode 9a2 from the sides. Further, when the upper surface of the transistor 9b1 and the diode 9b2 is the front surface and the lower surface is the back surface, the low voltage side electrode wiring 3 which is the front side electrode among the front side electrode and the back side electrode accommodates the transistor 9b1 and the diode 9b2 from the side. It has a recess 3a. For this reason, even if the fluidity of the conductive paste 11a is high, the positional accuracy of the transistor 9a1, the transistor 9b1, the diode 9a2, and the diode 9b2 with respect to the high-voltage side electrode wiring 2 can be maintained. Therefore, according to the power conversion device 1 of the present embodiment, as described above, the transistor 9a1, the transistor 9b1, the diode 9a2, and the diode 9b2 can be joined in one heating step. Therefore, according to the power conversion device 1 of the present embodiment, it is possible to simplify the manufacturing process while ensuring the positional accuracy of the transistor 9a1, the transistor 9b1, the diode 9a2, and the diode 9b2 with respect to the high-voltage side electrode wiring 2 and the like. .

  Further, in the power conversion device 1 of the present embodiment, the output electrode wiring 7 includes the crown portion 7a disposed so as to cover the transistor 9a1 and the diode 9a2 from the side opposite to the high-voltage side electrode wiring 2, and the transistors 9b1 and 9b1. The diode 9b2 has a crown portion 7b arranged so as to cover the low voltage side electrode wiring 3 from the opposite side. For this reason, the movement of the transistor 9a1, the transistor 9b1, the diode 9a2, and the diode 9b2 can be restricted by the crown portion 7a at the time of manufacture. Therefore, the positional accuracy of the transistor 9a1, the transistor 9b1, the diode 9a2, and the diode 9b2 with respect to the high-voltage electrode wiring 2 and the like can be more reliably ensured.

  Moreover, in the power converter device 1 of this embodiment, the depth dimension of the accommodation recessed part 2a and the accommodation recessed part 3a is set smaller than the thickness dimension of the transistor 9a1, the transistor 9b1, the diode 9a2, and the diode 9b2. For this reason, it is possible to prevent the high-voltage side electrode wiring 2 and the output electrode wiring 7 from being short-circuited, and to prevent the low-voltage side electrode wiring 3 and the output electrode wiring 7 from being short-circuited.

  Moreover, in the manufacturing method of the power converter device 1 of the present embodiment, the conductive joint 11 is formed by heating the conductive paste 11 a inside the mold 100, and then the molten resin is formed inside the mold 100. The insert molding is performed by injecting. For this reason, an electroconductive joining part formation process and a molding process can be performed without taking out from the metal mold | die 100, and a manufacturing process is simplified.

  Moreover, in the power converter device 1 of this embodiment, resin is also inserted between the high voltage side electrode wiring 2 and the output electrode wiring 7 or between the low voltage side electrode wiring 3 and the output electrode wiring 7 by insert molding. The mold part 10 is in a state of entering. For this reason, it is possible to prevent the high voltage side electrode wiring 2 and the output electrode wiring 7 from being short-circuited or the low voltage side electrode wiring 3 and the output electrode wiring 7 from being short-circuited due to deterioration over time or the like. In order to prevent short circuit more reliably, the surface of the high-voltage side electrode wiring 2 facing the output electrode wiring 7, the surface of the output electrode wiring 7 facing the high-voltage side electrode wiring 2, and the low-voltage side electrode wiring 3 An insulating sheet may be separately attached to one or a plurality of surfaces facing the output electrode wiring 7 and surfaces facing the low-voltage side electrode wiring 3 of the output electrode wiring 7.

  Moreover, in the power converter device 1 of this embodiment, the example which the accommodation recessed part 2a and the accommodation recessed part 3a formed by cutting was demonstrated. By forming the housing recess 2a and the housing recess 3a by cutting out, the surface of the high-voltage electrode wiring 2 opposite to the housing recess 2a and the surface of the low-voltage electrode wiring 3 opposite to the housing recess 3a are made flat. can do. For this reason, compared with the case where the housing recess 2a and the housing recess 3a are formed by embossing or the like, the surface opposite to the housing recess 2a of the high voltage side electrode wiring 2 and the housing recess 3a of the low voltage side electrode wiring 3 are opposite It is possible to improve the flatness of the side surface and prevent a gap from being formed between the cooler 14 and the side surface. Therefore, it is possible to improve the cooling efficiency by forming the housing recess 2a and the housing recess 3a by cutting.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the said embodiment. Various shapes, combinations, and the like of the constituent members shown in the above-described embodiments are examples, and various modifications can be made based on design requirements and the like without departing from the spirit of the present invention.

  For example, in the above-described embodiment, the output electrode wiring 7 has the crown portion 7a disposed so as to cover the transistor 9a1 and the diode 9a2 from the side opposite to the high-voltage side electrode wiring 2, and the transistor 9b1 and the diode 9b2 have the low-voltage side. And a crown portion 7b disposed so as to cover the electrode wiring 3 from the opposite side, and a transistor 9a1, a transistor 9b1, a diode 9a2, and a diode 9b2 are accommodated in the crown portion 7a and the crown portion 7b, respectively. The structure in which the recessed part was formed was employ | adopted. However, the present invention is not limited to this. For example, as shown in FIG. 4, it is also possible to employ a configuration in which the output electrode wiring 7 includes a convex portion 7c that protrudes toward the accommodating concave portion 2a. Although not shown in FIG. 4, similarly, the output electrode wiring 7 may include a convex portion that protrudes toward the accommodating concave portion 3 a. By adopting such a configuration, the distance between the high-voltage side electrode wiring 2 and the output electrode wiring 7 and the distance between the low-voltage side electrode wiring 3 and the output electrode wiring 7 can be secured long. It is possible to reliably prevent a short circuit from occurring.

  Further, the output electrode wiring 7 can be made flat without providing a crown portion or a convex portion. It is also possible to adopt a configuration in which the accommodating concave portion is formed in the output electrode wiring 7 and the high voltage side electrode wiring 2 or the low voltage side electrode wiring 3 is provided with a crown portion or a convex portion.

  In the above embodiment, the configuration in which the semiconductor chip is the transistor 9a1, the transistor 9b1, the diode 9a2, or the diode 9b2 has been described. However, the present invention is not limited to this, and can be applied to all modules in which another semiconductor chip is sandwiched between the front electrode and the back electrode.

  Moreover, in the said embodiment, the example which applied this invention to the power module which has an inverter function which converts direct-current power into alternating current power was demonstrated. However, the present invention is not limited to this. For example, the present invention can be applied to a power module that converts AC power into DC power, a power module that changes the voltage of DC power, and the like. That is, the present invention can be applied to a power conversion device that changes the form of input power and outputs it.

  DESCRIPTION OF SYMBOLS 1 ... Power converter device, 2 ... High voltage side electrode wiring (front side electrode), 2a ... Housing recessed part, 3 ... Low voltage side electrode wiring (back side electrode), 3a ... Housing recessed part, 4 ... Switching for U phase Leg, 5 ... V-phase switching leg, 6 ... W-phase switching leg, 7 ... Output electrode wiring (front electrode, back electrode), 7a ... Crown, 7a1 ... Recess, 7b ... Crown , 7b1... Concave portion, 7c... Convex portion, 8... Control electrode wiring, 9... Arm, 9a ... upper arm, 9a1 ... transistor (semiconductor chip), 9a2 ... diode (semiconductor chip), 9b ... Lower arm, 9b1 ... Transistor (semiconductor chip), 9b2 ... Diode (semiconductor chip), 10 ... Resin mold part, 11 ... Conductive joint, 11a ... Conductive paste, 12 ... Control electrode Wiring holder, 13 ... Conductive sheet, 14 ...... condenser, 100 ...... die, B ...... battery

Claims (7)

A module having a front-side electrode connected to the surface of the semiconductor chip via a conductive junction, and a back-side electrode connected to the back side of the semiconductor chip via a conductive junction,
At least one of the front-side electrode and the back-side electrode has a housing recess that surrounds the semiconductor chip from the side.   One of the front-side electrode and the back-side electrode has the housing recess, and the other of the front-side electrode and the back-side electrode is disposed opposite to the housing recess and covers the semiconductor chip from the side opposite to the housing recess. The module according to claim 1, further comprising a crown portion to be covered.   One of the front-side electrode and the back-side electrode has the accommodating recess, and the other of the front-side electrode and the back-side electrode has a convex portion that is disposed opposite to the accommodating recess and protrudes toward the accommodating recess. The module according to claim 1, characterized in that:   The depth dimension of the said accommodating recessed part is smaller than the thickness dimension of the said semiconductor chip of the front and back direction, The module as described in any one of Claims 1-3 characterized by the above-mentioned. It consists of the module according to any one of claims 1 to 4, or comprises the module according to any one of claims 1 to 4,
A power conversion device characterized by changing the form of input power and outputting. A semiconductor chip having a connection portion on each of the front and back surfaces, a front side electrode connected to the surface of the semiconductor chip via a conductive joint portion, and a back side connected to the back surface of the semiconductor chip via a conductive joint portion A method of manufacturing a module having an electrode,
A conductive paste disposing step of disposing a conductive paste on an accommodation recess provided in at least one of the front side electrode and the back side electrode and capable of accommodating the semiconductor chip;
A semiconductor chip holding step of holding the semiconductor chip in a state sandwiched between the front side electrode and the back side electrode while holding the semiconductor chip in the receiving recess;
A method of manufacturing a module, comprising: forming a conductive joint by heating the conductive paste. The conductive bonding portion forming step is performed in a state where the semiconductor chip, the front side electrode and the back side electrode are accommodated in a mold,
The method for manufacturing a module according to claim 6, further comprising a molding step of performing insert molding for covering the semiconductor chip, the front side electrode, and the back side electrode with a resin material after the conductive bonding portion forming step.

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