JP2019009242A - Photoelectric conversion module - Google Patents

Abstract

To minimize a space that must be increased to place a bypass diode.SOLUTION: A photoelectric conversion module 10 includes a substrate 20, a first photoelectric conversion cell 12a provided on the substrate 20, a second photoelectric conversion cell 12b provided on the substrate 20 and electrically connected in series with the first photoelectric conversion cell 12a via an electric connection portion 32, a non-photoelectric conversion region 14 provided between the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b, and a bypass diode 50. The bypass diode 50 is provided in the non-photoelectric conversion region 14.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a photoelectric conversion module including a plurality of photoelectric conversion cells.

  A photoelectric conversion module such as a solar battery module including a plurality of photoelectric conversion cells is known (Patent Document 1 below). In the integrated thin film photoelectric conversion module described in Patent Document 1, a plurality of photoelectric conversion cells are electrically connected to each other in series on a substrate.

  When the photoelectric conversion cell is covered with a shadow, the electrical resistance value of the photoelectric conversion cell covered with the shadow increases, so that the photoelectric conversion efficiency of the photoelectric conversion module may decrease. Therefore, Patent Document 1 discloses a photoelectric conversion module including a bypass diode.

Special table 2009-533856

  In the structure of the solar cell module described in Patent Document 1, a space for arranging the bypass diode is separately secured on the substrate. That is, the non-photoelectric conversion region that does not contribute to photoelectric conversion is increased by the space for arranging the bypass diode. This becomes a factor of reducing the photoelectric conversion efficiency per unit area of the solar cell module.

  Therefore, a photoelectric conversion module that can minimize the space that must be increased in order to arrange the bypass diode is desired.

  The photoelectric conversion module which concerns on 1 aspect is provided in the said board | substrate, the 1st photoelectric conversion cell provided on the said board | substrate, and the said 1st photoelectric conversion cell through the electrical connection part, and is electrically in series. A second photoelectric conversion cell connected to the first photoelectric conversion cell, a non-photoelectric conversion region between the first photoelectric conversion cell and the second photoelectric conversion cell, and a bypass diode. It is provided in the conversion area.

  According to the said aspect, the photoelectric conversion module which can make the space which must be increased in order to arrange | position a bypass diode as small as possible can be provided.

It is a top view of the photoelectric conversion module which concerns on one Embodiment. It is a perspective view of 2A area | region of FIG. It is sectional drawing of the photoelectric conversion module along the 3A-3A line | wire of FIG. It is a figure which shows one step of the manufacturing method of the photoelectric conversion module which concerns on one Embodiment. FIG. 5 is a diagram showing steps subsequent to FIG. 4. FIG. 6 is a diagram showing steps subsequent to FIG. 5. It is a figure which shows the step following FIG.

  Hereinafter, embodiments will be described with reference to the drawings. In the following drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic and ratios of dimensions and the like may differ from actual ones.

  FIG. 1 is a top view of a photoelectric conversion module according to an embodiment. FIG. 2 is a perspective view of the region 2A in FIG. That is, FIG. 2 is a schematic perspective view showing a part (2A region) cut out from the photoelectric conversion module. FIG. 3 is a cross-sectional view of the photoelectric conversion module taken along line 3A-3A in FIG.

  The photoelectric conversion module 10 according to this embodiment may be a thin-film photoelectric conversion module including a plurality of photoelectric conversion cells 12 a and 12 b integrated on a substrate 20. Preferably, the photoelectric conversion module 10 is a solar cell module that converts light energy into electrical energy.

  In the drawing, the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b adjacent to each other are shown for convenience of illustration. However, actually, a large number of photoelectric conversion cells may be formed on the substrate 20. A non-photoelectric conversion region 14 exists between the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b. That is, the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b do not need to be in contact with each other. As shown in FIG. 1, each of the photoelectric conversion cells 12 a and 12 b may have a substantially band shape when viewed from a direction orthogonal to the main surface of the substrate 20. The substrate 20 may be made of, for example, glass, ceramics, resin, metal, or the like.

  The photoelectric conversion module 10 has a photoelectric conversion region that mainly contributes to photoelectric conversion and a non-photoelectric conversion region 14 that does not mainly contribute to photoelectric conversion. In this specification, the area | region of each photoelectric conversion cell 12a, 12b is equivalent to a photoelectric conversion area | region. The non-photoelectric conversion region 14 corresponds to a region between the photoelectric conversion cells 12a and 12b, that is, a region between the photoelectric conversion regions. When the photoelectric conversion module 10 is a solar cell module, the “photoelectric conversion region” can also be called “power generation region”, and the “non-photoelectric conversion region” can also be called “non-power generation region”. In the figure, for convenience of illustration, the non-photoelectric conversion region 14 is shown wide, but the width of the non-photoelectric conversion region 14 may be narrower.

  Each photoelectric conversion cell 12a, 12b may include at least a first electrode layer 22, a second electrode layer 24, and a photoelectric conversion layer 26. The photoelectric conversion layer 26 is provided between the first electrode layer 22 and the second electrode layer 24. The first electrode layer 22 is provided between the photoelectric conversion layer 26 and the substrate 20. In the present embodiment, the second electrode layer 24 is provided closer to the light receiving surface than the photoelectric conversion layer 26.

  The first electrode layer 22 may be made of a metal such as molybdenum, titanium, or chromium, for example. The first electrode layer 22 of the first photoelectric conversion cell 12a is electrically separated from the first electrode layer 22 of the second photoelectric conversion cell 12b by the dividing portion P1 provided in the non-photoelectric conversion region 14.

  The second electrode layer 24 is preferably formed of a transparent electrode. In the present embodiment, the second electrode layer 24 is formed of an n-type semiconductor, more specifically, a material having n-type conductivity, a wide band gap, and a relatively low resistance. The second electrode layer 24 may be made of, for example, zinc oxide (ZnO) added with a group III element or indium tin oxide (ITO).

  The photoelectric conversion layer 26 may include, for example, a p-type semiconductor. In an example of a CIS-based photoelectric transducer Joule, the photoelectric conversion layer 26 includes a group I element (Cu, Ag, Au, etc.), a group III element (Al, Ga, In, etc.) and a group VI element (S, Se, Te). Etc.). The photoelectric conversion layer 26 is not limited to that described above, and may be formed of any material that causes photoelectric conversion.

  A buffer layer (not shown) may be provided between the photoelectric conversion layer 26 and the second electrode layer 24. In this case, the buffer layer may be a semiconductor material having the same conductivity type as that of the second electrode layer 24, or may be a semiconductor material having a different conductivity type, and has an electric resistance higher than that of the second electrode layer 24. What is necessary is just to be comprised with the high material.

  It should be noted that the configuration of the photoelectric conversion cells 12a and 12b is not limited to the above-described mode and can take various modes. For example, the photoelectric conversion cells 12a and 12b may have a configuration in which both an n-type semiconductor and a p-type semiconductor are sandwiched between a first electrode layer and a second electrode layer. In this case, the second electrode layer may not be composed of an n-type semiconductor. In addition, the photoelectric conversion cells 12a and 12b are not limited to a pn-coupled structure, but have a pin-coupled type including an intrinsic semiconductor layer (i-type semiconductor) between the n-type semiconductor and the p-type semiconductor. You may have a structure.

  A metal grid 30 may be provided on each of the photoelectric conversion cells 12 a and 12 b, specifically on the second electrode layer 24. A plurality of metal grids 30 are provided side by side on the photoelectric conversion cells 12a and 12b. Each metal grid 30 may extend along a direction (lateral direction in FIG. 1) crossing the photoelectric conversion cells 12a and 12b. The metal grid 30 may be made of a material having higher conductivity than the second electrode layer 24. Alternatively, the photoelectric conversion module 10 may not include the metal grid 30.

  The 1st photoelectric conversion cell 12a is divided from the 2nd photoelectric conversion cell 12b by the 2nd division part P2 and the 3rd division part P3 which extend in one direction (vertical direction in Drawing 1). In the present embodiment, the non-photoelectric conversion region 14 is defined by a region between the second divided portion P2 and the third divided portion P3.

  The first photoelectric conversion cell 12a is electrically connected in series with the second photoelectric conversion cell 12b via the electrical connection portion 32. The electrical connection portion 32 is provided in the non-photoelectric conversion region 14. The electrical connection part 32 electrically connects the second electrode layer 24 of the first photoelectric conversion cell 12a and the first electrode layer 22 of the second photoelectric conversion cell 12b. In the present embodiment, the electrical connection portion 32 is formed by a portion continuous from the metal grid 30 on the first photoelectric conversion cell 12a. In this case, the electrical connection portion 32 may be made of the same material as the metal grid 30. Instead, the electrical connection portion 32 may be made of a conductive material different from that of the metal grid 30.

  The electrical connection portion 32 extends in the thickness direction of the photoelectric conversion module 10 in the non-photoelectric conversion region 14, thereby electrically connecting a portion extending from the first electrode layer 22 of the second photoelectric conversion cell 12 b to the non-photoelectric conversion region 14. It is connected.

  In the embodiment shown in the figure, the electrical connection portion 32 is constituted by a portion continuous from the metal grid 30 as described above. Instead, the electrical connection portion 32 may be made of the same material as the second electrode layer 24 of the first photoelectric conversion cell 12a. That is, the second electrode layer 24 of the first photoelectric conversion cell 12 a may extend to the non-photoelectric conversion region 14. Even in this case, the electrical connection portion 32 extends from the first electrode layer 22 of the second photoelectric conversion cell 12b to the non-photoelectric conversion region 14 by extending in the thickness direction of the photoelectric conversion module 10 in the non-photoelectric conversion region 14. It is electrically connected to the extended part. In this case, the photoelectric conversion module 10 may not have the metal grid 30.

  When the photoelectric conversion layer 26 of each of the photoelectric conversion cells 12a and 12b is irradiated with light, an electromotive force is generated, and the first electrode layer 22 and the second electrode layer 24 become a positive electrode and a negative electrode, respectively. Accordingly, free electrons generated in the first photoelectric conversion cell 12a move from the second electrode layer 24 to the first electrode layer 22 of the second photoelectric conversion cell 12b through the electrical connection portion 32. Therefore, the current flows from the second photoelectric conversion cell 12b toward the first photoelectric conversion cell 12a via the electrical connection portion 32.

  The bypass diode 40 is provided in a region (non-photoelectric conversion region 14) between the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b that are electrically connected in series. The bypass diode 40 may be provided between the substrate 20 and the electrical connection portion 32 in the thickness direction. The bypass diode 40 has a rectifying property, and may include, for example, a p-type semiconductor 42 and an n-type semiconductor 44.

  The bypass diode 40 may extend along the direction in which the second divided portion P2 and the third divided portion P3 extend (the vertical direction in FIG. 1). Preferably, the bypass diode 40 has substantially the same length as the length of the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b in the direction in which the second divided portion P2 and the third divided portion P3 extend. .

  In the present embodiment, the p-type semiconductor 42 constituting the bypass diode 40 is provided on a layer continuously extending from the first electrode layer 22 of the second photoelectric conversion cell 12b. The n-type semiconductor 44 constituting the bypass diode 40 is provided on the p-type semiconductor 42.

  In addition, the photoelectric conversion module 10 may include a conductive portion 52 that electrically connects the n-type semiconductor 44 and the first electrode layer 22 of the first photoelectric conversion cell 12a. Thereby, the bypass diode 40 is arrange | positioned on the electrical path which connects the 1st electrode layer 22 of the 1st photoelectric conversion cell 12a, and the 1st electrode layer 22 of the 2nd photoelectric conversion cell 12b. If necessary, the photoelectric conversion module 10 may include an insulator 50 that insulates the electrical connection portion 32 and the bypass diode 40 from each other.

  In the present embodiment, as an example, on the electrical path, the p-type semiconductor 42 is disposed on the first electrode layer 22 side of the second photoelectric conversion cell 12b, and the n-type semiconductor 44 is the first electrode of the first photoelectric conversion cell 12a. Arranged on the layer 22 side. Thereby, the bypass diode 40 may have a rectifying property that allows current to flow easily only in the direction from the first electrode layer 22 of the second photoelectric conversion cell 12b toward the first electrode layer 22 of the first photoelectric conversion cell 12a.

  If the second photoelectric conversion cell 12b is irradiated with light and the first photoelectric conversion cell 12a is covered with a shadow, an electromotive force is generated in the second photoelectric conversion cell 12b, but the first photoelectric conversion cell 12a absorbs light. Layer 26 may act as an electrical resistance. Therefore, it may be difficult for the current to flow from the first electrode layer 22 of the second photoelectric conversion cell 12b to the first photoelectric conversion cell 12a through the electrical connection portion 32. Even in this case, since the bypass diode 40 is provided on the electrical path that bypasses the photoelectric conversion layer 26 of the first photoelectric conversion cell 12a, the current is supplied to the first electrode layer of the second photoelectric conversion cell 12b. 22 can easily flow through the bypass diode 40 to the first electrode layer 22 of the first photoelectric conversion cell 12a. Thereby, the fall of the photoelectric conversion efficiency by a shadow can be suppressed.

  In the illustrated embodiment, the bypass diode 40 is provided on an electrical path that bypasses the photoelectric conversion layer 26 of the first photoelectric conversion cell 12a. Instead, the bypass diode 40 is on an electrical path that bypasses the photoelectric conversion layer 26 of the second photoelectric conversion cell 12b, that is, the second electrode layer 24 of the first photoelectric conversion cell 12a and the second of the second photoelectric conversion cell 12b. It may be provided on a path that electrically connects the electrode layer 24. In this case, the current passes through the bypass diode 40 when the second photoelectric conversion cell 12b is covered with a shadow. Such a configuration can be realized by appropriately changing the arrangement of the electrode layer, the bypass diode 40 and the like in the non-photoelectric conversion region 14.

  Generally, in the photoelectric conversion module 10, the non-photoelectric conversion area | region 14 exists between the photoelectric conversion cells (photoelectric conversion area | regions) 12a and 12b electrically connected in series. By providing the bypass diode 40 in the non-photoelectric conversion region 14, the space that must be increased in order to arrange the bypass diode 40 can be minimized. That is, the non-photoelectric conversion region 14 that originally exists can be effectively used as a space for installing the bypass diode 40. As a result, an increase in the area of the photoelectric conversion module can be suppressed, and the photoelectric conversion efficiency per unit area of the photoelectric conversion module can be improved.

  The photoelectric conversion module 10 may have a light shielding part that covers at least a part of the bypass diode 40. The light shielding portion preferably covers the entire upper surface of the bypass diode 40, and more preferably surrounds the upper surface and side surfaces of the bypass diode 40.

  When light hits the bypass diode 40, an electromotive force may be generated in the bypass diode 40. The current generated by the electromotive force of the bypass diode 40 may reduce the current generated by the electromotive force of the photoelectric conversion cells 12a and 12b, and may deteriorate the performance of the photoelectric conversion module 10. By preventing the bypass diode 40 from being exposed to light by the light shielding portion, it is possible to suppress the deterioration in the performance of the photoelectric conversion module 10 as described above.

  The light shielding portion described above may include at least a part, preferably all, of the insulator 50. That is, the insulator 50 that electrically insulates the bypass diode 40 from the electrical connection portion 32 may have a light shielding property. In this case, the electrical connection portion 32 disposed closer to the light receiving surface than the insulator 50 may have a light shielding property or may not have a light shielding property.

  Further, the light shielding portion may include at least a part, preferably all, of the electrical connection portion 32. That is, the electrical connection portion 32 disposed on the light receiving surface side from the bypass diode 40 may be made of a light-shielding metal. In this case, it is preferable that the electrical connection portion 32 has a shape that matches the region of the bypass diode 40 in the non-photoelectric conversion region 14. Specifically, in the non-photoelectric conversion region 14, the electrical connection portion 32 has a band shape extending along the direction in which the first divided portion P1, the second divided portion P2, and the third divided portion P3 extend. Good. The light shielding portion may be configured by both the insulator 50 and the electrical connection portion 32.

  The bypass diode 40 may include the same material as at least a part of the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b. Preferably, the bypass diode 40 includes the p-type semiconductor 42 and the n-type made of the same material as the materials constituting the p-type semiconductor 26 and the n-type semiconductor 24 constituting the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b, respectively. A semiconductor 44 is included. More preferably, the p-type semiconductor 42 and the n-type semiconductor 44 are stacked in the same order as the p-type semiconductor 26 and the n-type semiconductor 24 constituting the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b. Thereby, at least a part of the bypass diode 40 can be formed by the same steps as the formation of the photoelectric conversion cells 12a and 12b. Therefore, manufacture of the photoelectric conversion module 10 becomes easy and the material required in order to manufacture a photoelectric conversion module can also be suppressed.

  The bypass diode 40 is not limited to the above configuration, and may have various configurations. For example, the p-type semiconductor 42 and the n-type semiconductor 44 constituting the bypass diode 40 may be adjacent to each other in a direction intersecting the thickness direction. In this case, if the n-type semiconductor 44 is disposed adjacent to the first electrode layer 22 of the first photoelectric conversion cell 12a, and the p-type semiconductor 42 is disposed adjacent to the first electrode layer 22 of the second photoelectric conversion cell 12b. Good. In this case, for example, the conductive portion 52 becomes unnecessary.

  The photoelectric conversion module 10 may be sealed with a transparent sealing material (not shown), for example.

  Next, with reference to FIGS. 4-7, the method to manufacture the photoelectric conversion module which concerns on one Embodiment is demonstrated. In each of the following steps, each layer can be appropriately formed by a film forming means such as a sputtering method or a vapor deposition method.

  In the first step, the materials constituting the photoelectric conversion cells 12 a and 12 b are stacked on the substrate 20. Specifically, in the first step, first, a material constituting the first electrode layer 22 is formed on the substrate 20 (see FIG. 4). The material constituting the first electrode layer 22 is formed in a region extending over the plurality of photoelectric conversion cells 12a and 12b. The materials of the substrate 20 and the first electrode layer 22 are as described above. Next, a part of the material constituting the first electrode layer 22 is removed in a thin line shape, thereby forming the first divided portion P1 for forming the first electrode layer 22 into a plurality of strips. The removal of a part of the material constituting the first electrode layer 22 can be performed by means such as a laser or a needle. Next, a material constituting the photoelectric conversion layer 26 is formed on the first electrode layer 22, and then a material constituting the second electrode layer 24 is formed on the material constituting the photoelectric conversion layer 26 (see FIG. 5). ). The material of the photoelectric conversion layer 26 and the second electrode layer 24 is also formed in a portion corresponding to the non-photoelectric conversion region 14. The materials of the photoelectric conversion layer 26 and the second electrode layer 24 are as described above. At this time, the material constituting the photoelectric conversion layer 26 may be filled also in the first divided portion P1. Further, the first divided portion P1 may be filled with another insulating member different from the material constituting the photoelectric conversion layer 26.

  Next, in the second step, the bypass diode 40 is formed in a region (non-photoelectric conversion region 14) between a region corresponding to the first photoelectric conversion cell 12a and a region corresponding to the second photoelectric conversion cell 12b ( (See FIG. 6).

  As a specific example, in the second step, the material constituting the photoelectric conversion layer 26 and the second electrode layer 24 formed over the region corresponding to the first photoelectric conversion cell 12a and the region corresponding to the second photoelectric conversion cell 12b. The second divided part P2 and the third divided part P3 are formed by removing a part in a thin line shape. The removal of a part of the material constituting the photoelectric conversion layer 26 and the second electrode layer 24 can be performed by means such as a laser or a needle. Thereby, in the non-photoelectric conversion region 14, a part of the material constituting the photoelectric conversion layer 26 and the second electrode layer 24 is partitioned from the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b and formed in a band shape. The In this way, part of the material constituting the photoelectric conversion layer 26 and the second electrode layer 24 remaining in the non-photoelectric conversion region 14 constitutes the p-type semiconductor 42 and the n-type semiconductor 44 constituting the bypass diode 40, respectively. .

  As another example, in the second step, after forming the second divided portion P2 and the third divided portion P3, the material constituting the second electrode layer (n-type semiconductor) 24 remaining in the non-photoelectric conversion region 14 is removed. Then, another n-type semiconductor may be stacked on the p-type semiconductor 42 formed as the remaining portion of the photoelectric conversion layer 26. Even in this case, the bypass diode 40 can be formed in the non-photoelectric conversion region 14.

  As yet another example, after the photoelectric conversion layer 26 and the second electrode layer 24 remaining in the non-photoelectric conversion region 14 are all removed in the second step, the bypass diode 40 may be formed in the non-photoelectric conversion region 14. Good. In this case, the bypass diode 40 can be formed of a material different from that of the photoelectric conversion cells 12a and 12b.

  Further, in the second step, a conductive portion 52 for electrically connecting the bypass diode 40 and the first electrode layer 22 of the first photoelectric conversion cell 12a may be formed as necessary. The conductive portion 52 can be formed by any method. For example, the conductive portion 52 is formed by applying a conductive paste to a part of the second divided portion P2 (so as not to contact the photoelectric conversion layer 26 and the second electrode layer 24 of the first photoelectric conversion cell). Can do. Instead of this, the side surfaces of the bypass diode 40 facing the second divided part P2 are irradiated with laser, and the side surfaces of the p-type semiconductor 42 and the n-type semiconductor 44 are modified to have conductivity. The part 52 can be formed.

  Next, an insulator 50 that covers the bypass diode 40 and the conductive portion 52 is formed as necessary. The insulator 50 electrically insulates the electrical connection portion 32 and the bypass diode 40 that will be formed later. The insulator 50 may cover the entire bypass diode 40 or may be provided only at a location corresponding to the electrical connection portion 32. However, when the insulator 50 constitutes the above-described light shielding portion, the insulator 50 is preferably formed so as to cover the entire bypass diode 40.

  Next, in a third step, an electrical connection portion 32 that electrically connects the second electrode layer 24 of the first photoelectric conversion cell 12a and the first electrode layer 22 of the second photoelectric conversion cell 12b is formed (FIG. 7). reference). The electrical connection portion 32 can be formed by depositing a conductive material on the bypass diode 40 and in the third divided portion P3. At this time, it is preferable to leave a gap partially in the third divided portion P3 so that the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b are not short-circuited. Instead, after filling the third divided portion P3 with the conductive material, the conductive material may be partially removed to open a gap again at the third divided portion P3. The gap of the third divided portion P3 may be filled with an insulator (not shown) as necessary.

  In the third step, the metal grid 30 may be formed on the second electrode layer 24 of the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b as necessary. The metal grid 30 and the electrical connection portion 32 can be simultaneously formed of the same material. Instead, the metal grid 30 and the electrical connection portion 32 may be formed of different materials in different steps.

  By carrying out the above steps, the photoelectric conversion module 10 shown in FIGS.

  As described above, the content of the present invention has been disclosed through the embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

  For example, in the above-described embodiment, the two photoelectric conversion cells 12a and 12b adjacent to each other have been described in detail, but the photoelectric conversion module 10 may include a large number of photoelectric conversion cells electrically connected in series. . In this case, each photoelectric conversion cell (photoelectric conversion region) may have the same configuration as the first photoelectric conversion cell 12a and the second photoelectric conversion cell 12b described above. Furthermore, the bypass diode 40 may be provided in at least one, preferably a plurality, more preferably all of the regions between the photoelectric conversion cells electrically connected in series.

10 Photoelectric conversion module 12a First photoelectric conversion cell 12b Second photoelectric conversion cell 14 Non-photoelectric conversion region 20 Substrate 22 First electrode layer 24 Second electrode layer (n-type semiconductor)
26 Photoelectric conversion layer (p-type semiconductor)
32 Electrical connection (shading part)
40 Bypass diode 50 Insulator (light-shielding part)

Claims (9)

A substrate,
A first photoelectric conversion cell provided on the substrate;
A second photoelectric conversion cell provided on the substrate and electrically connected in series with the first photoelectric conversion cell via an electrical connection;
A non-photoelectric conversion region between the first photoelectric conversion cell and the second photoelectric conversion cell;
A bypass diode,
The bypass diode is a photoelectric conversion module provided in the non-photoelectric conversion region. The first photoelectric conversion cell and the second photoelectric conversion cell each include a first electrode layer, a second electrode layer, and a photoelectric conversion layer between the first electrode layer and the second electrode layer. ,
2. The photoelectric conversion module according to claim 1, wherein the electrical connection portion electrically connects the second electrode layer of the first photoelectric conversion cell and the first electrode layer of the second photoelectric conversion cell. .   The photoelectric conversion module according to claim 1, wherein the bypass diode is provided between the substrate and the electrical connection portion.   The said bypass diode is a photoelectric conversion module of any one of Claim 1 to 3 containing the same material as at least one part of a said 1st photoelectric conversion cell and a said 2nd photoelectric conversion cell. The first photoelectric conversion cell and the second photoelectric conversion cell have a p-type semiconductor and an n-type semiconductor,
The bypass diode includes a p-type semiconductor and an n-type semiconductor made of the same material as the material of the p-type semiconductor and the n-type semiconductor of the first photoelectric conversion cell and the second photoelectric conversion cell, respectively. 4. The photoelectric conversion module according to 4.   The photoelectric conversion module according to claim 1, further comprising an insulator that insulates the electrical connection portion and the bypass diode from each other.   The photoelectric conversion module according to claim 1, further comprising a light shielding portion that covers at least a part of the bypass diode.   The photoelectric conversion module according to claim 7, wherein the light shielding part includes at least a part of the electrical connection part. An insulator that insulates the electrical connection portion and the bypass diode from each other;
The photoelectric conversion module according to claim 7 or 8, wherein the light shielding part includes at least a part of the insulator.

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